JP2012108845A - Conductive film for touch panel and touch panel provided with the same - Google Patents

Abstract

Provided is a conductive film for a touch panel that can suppress the occurrence of moire even when attached on a display panel of a display device with a simple configuration.
A conductive film for a touch panel installed on a display panel of a display device, comprising a conductive portion having a mesh pattern made of fine metal wires, and a moire suppressing portion at an intersection of the mesh pattern. 26 is formed, and Sa × 0.01 <Sb ≦ Sa × 5.00 is satisfied, where Sa is the area of the intersecting portion 24 and Sb is the area of the moire suppressing portion 26.
[Selection] Figure 3

Description

  The present invention relates to a touch panel including a conductive film for a touch panel that can suppress the occurrence of moire and the conductive film for a touch panel.

The touch panel is mainly applied to a small size such as a PDA (personal digital assistant) or a mobile phone, but it is considered that the touch panel will be increased in size by being applied to a display for a personal computer.
In such a future trend, since the conventional electrode uses ITO (indium tin oxide), the resistance is large (about 100 to 200 ohm / sq.), And as the application size increases, the distance between the electrodes increases. There is a problem that the current transmission speed is slow, and the response speed (the time from when the fingertip is touched until the position is detected) is slow.
Therefore, it is conceivable to reduce the surface resistance by forming an electrode by arranging a large number of grids made of metal fine wires (metal fine wires). For example, Patent Documents 1 to 4 are known as touch panels using metal fine wires as electrodes.

Conventionally, Patent Documents 5 and 6 are disclosed as conductive films for touch panels.
Patent Documents 5 and 6 disclose a conductive film 10 for a touch panel having a conductive layer 14 containing silver formed by exposing and developing a silver salt emulsion layer 16 on a support 12, and the conductive layer 14 has a pitch of 600 μm. The example formed in the above mesh pattern is described. According to the conductive film for a touch panel according to these Patent Documents 5 and 6, the conductive film suitable for the conductive film for the touch panel is obtained, moire is sufficiently reduced, and the touch panel characteristics are excellent.

US Pat. No. 5,130,041 International Publication No. 95/27334 Pamphlet US Patent Application Publication No. 2004/0239650 US Pat. No. 7,202,859 JP 2010-108878 A JP 2010-108877 A

  The present invention has a simple configuration different from the above-described Patent Documents 1 to 6, and includes a conductive film for a touch panel and a touch panel that can suppress the occurrence of moire even when mounted on a display panel of a display device. An object is to provide a conductive film.

[1] A touch panel according to a first aspect of the present invention is a touch panel including a conductive film for a touch panel installed on a display panel, and the conductive film for a touch panel has a conductive pattern having a mesh pattern of metal thin wires. A moiré suppression portion is formed at the intersection of the mesh pattern, the area of the intersection is Sa, and the area of the moiré suppression portion is Sb.
Sa × 0.01 <Sb ≦ Sa × 5.00
It is characterized by being.
[2] A conductive film for a touch panel according to a second aspect of the present invention is a conductive film for a touch panel installed on a display panel of a display device, and includes a conductive portion having a mesh pattern made of metal thin wires, When a moiré suppression portion is formed at the intersection of the mesh pattern, the area of the intersection is Sa, and the area of the moiré suppression portion is Sb.
Sa × 0.01 <Sb ≦ Sa × 5.00
It is characterized by being.
[3] In the second invention,
Sa × 0.90 ≦ Sb ≦ Sa × 1.10.
It is characterized by being.
[4] In the second aspect of the present invention, the intersecting portion is configured by intersecting the first metal thin wire and the second thin wire constituting the mesh pattern, and the moire suppressing portion is formed of the first thin wire. Formed between one side surface and one side surface of the second thin wire, one side surface of the first thin wire, and the other side surface of the second thin wire. A second restraining portion, a third restraining portion formed between the other side surface of the first thin wire, and one side surface of the second thin wire, the other side surface of the first thin wire, It has the 4th suppression part formed between the other side surfaces of two thin wires, It is characterized by the above-mentioned.
[5] In the second aspect of the present invention, when the areas of the first suppression unit, the second suppression unit, the third suppression unit, and the fourth suppression unit are Sb1, Sb2, Sb3, and Sb4,
Sb = Sb1 + Sb2 + Sb3 + Sb4
It is characterized by being.
[6] In the second aspect of the present invention, the thin wire has a line width of 1 to 15 μm.
[7] In the second aspect of the present invention, the thin wire has a line width of 1 to 9 μm.
[8] In the second aspect of the present invention, the line spacing of the fine wires is 65 to 500 μm.

As described above, according to the touch panel according to the present invention, since the conductive film for a touch panel that can suppress the generation of moire is provided, the display screen does not become difficult to see with moire, and the display quality is improved. And operability can be improved.
In addition, according to the conductive film for a touch panel according to the present invention, it is possible to suppress the occurrence of moire even with a simple configuration on the display panel of the display device, thereby improving the display quality of the touch panel. Accordingly, the operability can be improved.

It is a top view which shows an example of the electroconductive film which concerns on this Embodiment. It is sectional drawing which abbreviate | omits and shows a part of electroconductive film. It is a top view which partially enlarges and shows an example of an electroconductive film. It is a top view which expands and shows a part of other example of an electroconductive film. It is a top view which expands and shows some other examples of an electroconductive film partially. It is a top view which expands and shows some other examples of an electroconductive film partially. It is a disassembled perspective view which shows the structure of a touchscreen. It is a disassembled perspective view which abbreviate | omits and shows a laminated conductive film. FIG. 9A is a cross-sectional view showing a part of the laminated conductive film with a part omitted, and FIG. 9B is a cross-sectional view showing a part of the other example of the laminated conductive film, omitted. It is a top view which shows the example of a pattern of the 1st conductive pattern formed in a 1st conductive film. It is a top view which shows the example of a pattern of the 2nd conductive pattern formed in a 2nd conductive film. It is a top view which abbreviate | omits and shows the example which made the laminated conductive film combining the 1st conductive film and the 2nd conductive film. It is explanatory drawing which shows the state in which one line was formed of the 1st auxiliary line and the 2nd auxiliary line. 14A to 14C are process diagrams showing an example of a method for manufacturing a conductive film according to the present embodiment. FIG. 6 is a characteristic diagram showing the relationship between exposure energy and image density in digital writing exposure for a silver salt photosensitive layer. 16A and 16B are process diagrams showing another example of the method for manufacturing a conductive film according to the present embodiment. 17A and 17B are process diagrams showing still another example of the conductive film manufacturing method according to the present embodiment. It is process drawing which shows the further another example of the manufacturing method of the electroconductive film which concerns on this Embodiment.

  Hereinafter, embodiments of a touch panel provided with the conductive film for a touch panel and the conductive film for a touch panel according to the present invention will be described with reference to FIGS. In the present specification, “˜” indicating a numerical range is used as a meaning including numerical values described before and after the numerical value as a lower limit value and an upper limit value.

  As shown in FIGS. 1 and 2, the conductive film 10 according to the present embodiment includes a transparent substrate 12 (see FIG. 2) and a conductive portion 14 formed on one main surface of the transparent substrate 12. . The conductive portion 14 has a mesh pattern 20 including a metal fine wire (hereinafter referred to as a metal fine wire 16) and an opening 18. The thin metal wire 16 is made of, for example, gold (Au), silver (Ag), or copper (Cu).

  Specifically, the conductive portion 14 extends in the first direction (x direction in FIG. 1) and is arranged in the second direction (y direction in FIG. 1) and a plurality of first metal thin wires 16a, A mesh pattern 20 is formed which extends in the direction and intersects with the plurality of second thin metal wires 16b arranged in the first direction. One mesh shape 22 of the mesh pattern 20, that is, a combination shape of one opening 18 and the four fine metal wires 16 surrounding the one opening 18 may be square or rhombus as shown in FIG. Good. In addition, it is good also as polygonal shapes, such as a regular hexagon. Further, the shape of one side may be a curved shape or a circular arc shape in addition to a linear shape. In the case of an arc shape, for example, two opposing sides may be outwardly convex arc shapes, and the other two opposing sides may be inwardly convex arc shapes. The shape of each side may be a wavy shape in which an outwardly convex arc and an inwardly convex arc are continuous. Of course, the shape of each side may be a sine curve.

As shown in FIGS. 1 and 3, the conductive film 10 has a moire suppressing portion 26 formed adjacent to the intersecting portion 24 of the mesh pattern 20 constituting the conductive portion 14, thereby reducing the area of the intersecting portion 24. Sa, when the area of the moire suppression unit 26 is Sb,
Sa × 0.01 <Sb ≦ Sa × 17.00
Satisfied. Preferably, Sa × 0.50 ≦ Sb ≦ Sa × 5.00, more preferably Sa × 0.50 ≦ Sb ≦ Sa × 1.50, and more preferably Sa × 0.90 ≦ Sb ≦. Sa × 1.20.

  The moire suppressing part 26 includes a first suppressing part 26a formed between one side surface of the first metal thin wire 16a and one side surface of the second metal thin wire 16b, and one side surface of the first metal thin wire 16a. , Formed between the other side surface of the second metal fine wire 16b, the other side surface of the first metal fine wire 16a, and one side surface of the second metal fine wire 16b. The third suppression portion 26c, and the fourth suppression portion 26d formed between the other side surface of the first metal fine wire 26a and the other side surface of the second metal thin wire 26b.

And when each area of the 1st suppression part 26a, the 2nd suppression part 26b, the 3rd suppression part 26c, and the 4th suppression part 26d is set to Sb1, Sb2, Sb3, Sb4,
Sb = Sb1 + Sb2 + Sb3 + Sb4
Satisfied.

  In this case, the line width La of the 1st metal fine wire 16a and the line width Lb of the 2nd metal fine wire 16b are 1-15 micrometers, Preferably it is 1-9 micrometers. The line widths of the first fine metal wires 16a and the second fine metal wires 16b may be the same or different. Moreover, the line interval of the 1st metal fine wire 16a and the line interval of the 2nd metal fine wire 16b are 60-500 micrometers. The line intervals of the first fine metal wires 16a and the second fine metal wires 16b may be the same or different.

  As described above, in the present embodiment, the moire suppressing portion 26 is formed adjacent to the intersecting portion 24 of the mesh pattern 20 constituting the conductive portion 14, and the area of the intersecting portion 24 and the area of the moire suppressing portion 26 are further formed. Is trying to optimize. As a result, the integral amount of the light transmitted through the conductive portion 14 becomes almost the same in the crossing portion 24 and the portion other than the crossing portion 24, and the mesh pattern 20 seems to disappear, thereby generating moiré. It will be suppressed. Moreover, since the line width of the fine metal wires 16 is set to 1 to 15 μm and the interval between the fine metal wires 16 is set to 65 to 500 μm, high transparency and good visibility (the mesh pattern 20 is hardly noticeable) can be provided at the same time. Can do.

  In addition, as shown in FIGS. 1 and 3, the planar shape of the first suppression unit 26 a to the fourth suppression unit 26 d constituting the moire suppression unit 26 may be triangular, but is rectangular as illustrated in FIG. 4. Alternatively, as shown in FIG. 5, a shape in which a circular arc cutout is formed in a triangle may be used, or a shape in which a circle is ¼ may be used as shown in FIG. 6. Of course, it may be asymmetrical.

[Application example for touch panel]
Next, an example in which a touch panel is configured using the conductive film 10 will be described with reference to FIGS.
The touch panel 50 includes a sensor body 52 and a control circuit (configured by an IC circuit or the like) not shown. As shown in FIGS. 7, 8, and 9A, the sensor body 52 includes a laminated conductive film 54 formed by laminating a first conductive film 10A and a second conductive film 10B, which will be described later, and a top thereof. And a protective layer 56 (the description of the protective layer 56 is omitted in FIG. 9). The laminated conductive film 54 and the protective layer 56 are arranged on a display panel 58 in a display device 57 such as a liquid crystal display. When viewed from above, the sensor main body 52 includes a sensor unit 60 disposed in a region corresponding to the display screen 58 a of the display panel 58 and a terminal wiring unit 62 disposed in a region corresponding to the outer peripheral portion of the display panel 58. (So-called picture frame).

  The first conductive film 10A applied to the touch panel 50 includes a first conductive portion 14A formed on one main surface of the first transparent substrate 12A (see FIG. 9A) as shown in FIGS. Have The first conductive portions 14A extend in the third direction (m direction) and are arranged in a fourth direction (n direction) orthogonal to the third direction, and are formed of a large number of lattices. 16 includes two or more first conductive patterns 20A (mesh patterns), and first auxiliary patterns 100A formed of fine metal wires 16 arranged around each first conductive pattern 20A.

The first conductive pattern 20A is configured by connecting two or more first large lattices 102A in series in the third direction, and each first large lattice 102A is configured by combining two or more small lattices 104, respectively. Yes. Further, the above-described first auxiliary pattern 100A that is not connected to the first large lattice 102A is formed around the side of the first large lattice 102A.
A first connection portion 106A that electrically connects the first large lattices 102A is formed between the adjacent first large lattices 102A. 106 A of 1st connection parts are comprised by arrange | positioning the intermediate | middle grating | lattice 108 of the magnitude | size by which n pieces (n is a real number larger than 1) small grating | lattice 104 was arranged in the 2nd direction (y direction). Of the sides along the first direction (x direction) of the first large lattice 102A, a portion adjacent to the middle lattice 108 is formed with a first notch 110A in which one side of the small lattice 104 is missing. ing. Here, the small lattice 104 has the smallest square shape. In the example of FIG. 10, the medium lattice 108 has a size in which three small lattices 104 are arranged in the second direction.
In addition, a first insulating portion 112A that is electrically insulated is disposed between adjacent first conductive patterns 20A.

  The first auxiliary pattern 100A described above includes a plurality of first auxiliary lines 114A (the second direction as the axial direction) arranged along the side 103a along the first direction among the sides 103a of the first large lattice 102A. ), A plurality of first auxiliary lines 114A (the first direction is the axial direction) arranged along the side 103a along the second direction among the sides 103a of the first large lattice 102A, and the first insulation The portion 112A has a pattern in which two first L-shaped patterns 116A each formed by combining two first auxiliary lines 114A in an L shape are arranged to face each other.

  The length of each first auxiliary line 114A in the axial direction has a length of 4/5 or less, preferably 1/2 or less, of one side along the inner circumference of the small lattice 104. Each of the first auxiliary lines 114A is formed at a position separated from the first large lattice 102A by a predetermined distance. The predetermined distance is a length obtained by subtracting the length of the first auxiliary line 114A in the axial direction from the length of one side along the inner periphery of the small lattice 104. For example, if the length of the first auxiliary line 114A in the axial direction is 4/5 or 1/2 of one side along the inner periphery of the small lattice 104, the predetermined distance is equal to the inner periphery of the small lattice 104. It becomes 1/5 or 1/2 of one side along.

  As shown in FIG. 8, the first conductive film 10A configured as described above is configured such that the open end of the first large lattice 102A existing on one end side of each first conductive pattern 20A is the first connection. The portion 106A does not exist. The end portion of the first large lattice 102A existing on the other end portion side of each first conductive pattern 20A is electrically connected to the first terminal wiring pattern 86a by the metal thin wire 16 through the first connection portion 84a. Yes.

  That is, in the first conductive film 10A applied to the touch panel 50, as shown in FIGS. 7 and 8, the first conductive pattern 20A described above is arranged in a portion corresponding to the sensor unit 60, and the terminal wiring unit 62 is arranged with a plurality of first terminal wiring patterns 86a led out from the first connection portions 84a.

  In the example of FIG. 7, the outer shape of the first conductive film 10A has a rectangular shape when viewed from above, and the outer shape of the sensor unit 60 also has a rectangular shape. In the terminal wiring portion 62, the first conductive film 10A has a peripheral portion on one long side of the first conductive film 10A and a plurality of first terminals 88a in the length direction of the one long side. An array is formed. In addition, a plurality of first connection portions 84a are linearly arranged along one long side of the sensor unit 60 (long side closest to one long side of the first conductive film 10A: n direction). The first terminal wiring pattern 86a derived from each first connection portion 84a is routed toward a substantially central portion on one long side of the first conductive film 10A, and is electrically connected to the corresponding first terminal 88a. It is connected to the.

  On the other hand, as shown in FIGS. 8, 9B, and 11, the second conductive film 10B has a second conductive portion 14B formed on one main surface of the second transparent substrate 12B (see FIG. 9A). Each of the second conductive portions 14B extends in the fourth direction (n direction) and is arranged in the third direction (m direction). 2 conductive patterns 20B (mesh pattern) and second auxiliary patterns 100B made of fine metal wires 16 arranged around each second conductive pattern 20B.

  The second conductive pattern 20B is configured by connecting two or more second large lattices 102B in series in the fourth direction, and each second large lattice 102B is configured by combining two or more small lattices 104. Yes. Further, the second auxiliary pattern 100B described above that is not connected to the second large lattice 102B is formed around the side of the second large lattice 102B.

Between the adjacent second large lattices 102B, second connection portions 106B that electrically connect the second large lattices 102B are formed. The second connecting portion 106B is configured by arranging a medium lattice 108 having a size in which n (n is a real number larger than 1) small lattices 104 are arranged in the first direction (x direction). Of the sides along the second direction (y direction) of the second large lattice 102B, a portion adjacent to the middle lattice 108 is formed with a second notched portion 110B from which one side of the small lattice 104 is missing. ing.
Further, a second insulating portion 112B that is electrically insulated is disposed between the adjacent second conductive patterns 20B.

  The second auxiliary pattern 100B described above has a plurality of second auxiliary lines 114B (the first direction is the axial direction) arranged along the side 103b along the second direction among the sides 103b of the second large lattice 102B. ), A plurality of second auxiliary lines 114B arranged along the side 103b along the first direction among the sides 103b of the second large lattice 102B (the second direction is defined as the axial direction), and the second insulation The part 112B has a pattern in which two second L-shaped patterns 116B each formed by combining two second auxiliary lines 114B in an L-shape are arranged to face each other.

  The length of each second auxiliary line 114B in the axial direction is 4/5 or less, preferably 1/2 or less of one side along the inner circumference of the small lattice 104, like the first auxiliary line 114A described above. Have a length. Each of the second auxiliary lines 114B is formed at a position separated from the second large lattice 102B by a predetermined distance. This predetermined distance is also the length obtained by subtracting the length in the axial direction of the second auxiliary line 114B from the length of one side along the inner circumference of the small lattice 104, like the first auxiliary line 114A described above. is there. For example, if the length of the second auxiliary line 114B in the axial direction is 4/5 or 1/2 of one side along the inner periphery of the small lattice 104, the predetermined distance is equal to the inner periphery of the small lattice 104. It becomes 1/5 or 1/2 of one side along.

  As shown in FIG. 8, the second conductive film 10B configured as described above has an open end of the second large lattice 102B existing on one end side of each second conductive pattern 20B. The portion 106B does not exist. On the other hand, the second large lattice 102B that exists on the other end side of each odd-numbered second conductive pattern 20B and the second end that exists on one end side of each even-numbered second conductive pattern 20B. The end portions of the large lattice 102B are electrically connected to the second terminal wiring pattern 86b formed by the fine metal wires 16 through the second connection portions 84b.

  That is, in the second conductive film 10B applied to the touch panel 50, as shown in FIG. 8, a large number of second conductive patterns 20B are arranged in a portion corresponding to the sensor unit 60, and each terminal wiring unit 62 has a second conductive pattern 10B. A plurality of second terminal wiring patterns 86b led out from the two connection portions 84b are arranged.

  As shown in FIG. 7, among the terminal wiring portions 62, a plurality of second terminals 88 b are arranged in the central portion in the longitudinal direction on the peripheral portion on one long side of the second conductive film 10 </ b> B. The long side is arranged in the length direction. A plurality of second connection portions 84b (for example, odd-numbered second connection portions) along one short side of the sensor unit 60 (short side closest to one short side of the second conductive film 10B: m direction). 84b) are arranged in a straight line, and a plurality of second connection portions 84b (for example, along the other short side of the sensor unit 60 (short side closest to the other short side of the second conductive film 10B: m direction)). Even-numbered second connection portions 84b) are arranged in a straight line.

Among the plurality of second conductive patterns 20B, for example, odd-numbered second conductive patterns 20B are connected to the corresponding odd-numbered second connection portions 84b, and even-numbered second conductive patterns 20B are respectively corresponding even-numbered. It is connected to the second second connection portion 84b. The second terminal wiring pattern 86b derived from the odd-numbered second connection portion 84b and the second terminal wiring pattern 86b derived from the even-numbered second connection portion 84b are one long side of the second conductive film 10B. And are electrically connected to the corresponding second terminals 88b.
The first terminal wiring pattern 86a may be derived in the same manner as the second terminal wiring pattern 86b described above, and the second terminal wiring pattern 86b may be derived in the same manner as the first terminal wiring pattern 86a.

  The length of one side of the first large lattice 102A and the second large lattice 102B is preferably 3 to 10 mm, and more preferably 4 to 6 mm. If the length of one side is less than the lower limit value, the capacitance of the first large lattice 102A and the second large lattice 102B at the time of detection is reduced, so that the possibility of detection failure increases. On the other hand, if the upper limit is exceeded, the position detection accuracy may be reduced. From the same viewpoint, the length of one side of the small lattice 104 constituting the first large lattice 102A and the second large lattice 102B is preferably 50 to 500 μm. When the small lattice 104 is within the above range, it is possible to keep the transparency better, and when the small lattice 104 is mounted on the display panel 58 of the display device 57, the display can be visually recognized without a sense of incongruity.

Further, the line width of the first conductive pattern 20A (first large lattice 102A, medium lattice 108), the line width of the second conductive pattern 20B (second large lattice 102B, medium lattice 108), the first auxiliary pattern 100A (first The line widths of the auxiliary line 114A) and the second auxiliary pattern 100B (second auxiliary line 114B) are 1 to 15 μm, respectively. In this case, the line width of the first conductive pattern 20A and the line width of the second conductive pattern 20B may be the same or different. However, it is preferable that the line widths of the first conductive pattern 20A, the second conductive pattern 20B, the first auxiliary pattern 100A, and the second auxiliary pattern 100B are the same.
That is, the line width of the fine metal wire 16 is preferably 1 to 9 μm. The line interval (the interval between adjacent fine metal wires 16) is preferably 50 to 500 μm. In addition, the first conductive film 10A and the second conductive film 10B preferably have an aperture ratio of 85% or more from the viewpoint of visible light transmittance.

  For example, when the first conductive film 10A is laminated on the second conductive film 10B to form the laminated conductive film 54, the first conductive pattern 20A and the second conductive pattern 20B are formed as shown in FIG. Specifically, the first connecting portion 106A of the first conductive pattern 20A and the second connecting portion 106B of the second conductive pattern 20B are formed in the first transparent base 12A (see FIG. 9A). The first insulating portion 112A of the first conductive portion 14A and the second insulating portion 112B of the second conductive portion 14B are opposed to each other with the first transparent base 12A interposed therebetween.

  When the laminated conductive film 54 is viewed from the upper surface, as shown in FIG. 12, the second conductive film 10B has the second conductive film 10B so as to fill the gaps of the first large lattice 102A formed in the first conductive film 10A. The large lattice 102B is arranged. At this time, a combination pattern 118 is formed between the first large lattice 102A and the second large lattice 102B so that the first auxiliary pattern 100A and the second auxiliary pattern 100B face each other. In the combination pattern 118, as shown in FIG. 13, the first axis 120A of the first auxiliary line 114A and the second axis 120B of the second auxiliary line 114B coincide, and the first auxiliary line 114A and the second auxiliary line 114B does not overlap, and one end of the first auxiliary line 114A coincides with one end of the second auxiliary line 114B, thereby constituting one side of the small lattice 104. That is, the combination pattern 118 has a form in which two or more small lattices 104 are combined. As a result, when the laminated conductive film 54 is viewed from the top surface, a large number of small lattices 104 are spread as shown in FIG.

  Here, for example, when the first auxiliary line 114A and the second auxiliary line 114B are not formed, a blank area corresponding to the width of the combination pattern 118 is formed, whereby the boundary of the first large lattice 102A, the second The boundary of the large lattice 102B becomes conspicuous, causing a problem that visibility is deteriorated. In order to avoid this, it is conceivable to eliminate the blank area by overlapping the side 103b of the second large lattice 102B on each side 103a of the first large lattice 102A. The width of the overlapping portion between the shapes increases (thickening of the line), thereby causing a problem that the boundary between the first large lattice 102A and the second large lattice 102B becomes conspicuous and the visibility deteriorates.

  In contrast, in the present embodiment, as described above, the boundary between the first large lattice 102A and the second large lattice 102B becomes inconspicuous due to the overlap between the first auxiliary line 114A and the second auxiliary line 114B. Visibility is improved.

  Further, as described above, for example, when the side 103b of the second large lattice 102B is overlapped with the side 103a of the first large lattice 102A to eliminate the blank area, the second region is directly below each side 103a of the first large lattice 102A. The side 103b of the large lattice 14B is located. At this time, the side 103a of the first large lattice 102A and the side 103b of the second large lattice 102B also function as conductive portions, respectively, and therefore, between the side 103a of the first large lattice 102A and the side 103b of the second large lattice 102B. Parasitic capacitance is formed in the capacitor, and the presence of this parasitic capacitance acts as a noise component on the charge information, causing a significant decrease in the S / N ratio. In addition, since a parasitic capacitance is formed between each first large lattice 102A and each second large lattice 102B, a large number of parasitic capacitances are connected in parallel to the first conductive pattern 20A and the second conductive pattern 20B. As a result, there is a problem that the CR time constant becomes large. When the CR time constant increases, the rise time of the waveform of the voltage signal supplied to the first conductive pattern 20A (and the second conductive pattern 20B) is delayed, and an electric field for position detection is hardly generated in a predetermined scan time. There is a risk that it will not be performed. In addition, the rise time or fall time of the waveform of the transmission signal from the first conductive pattern 20A and the second conductive pattern 20B is also delayed, and there is a possibility that the change in the waveform of the transmission signal cannot be captured during a predetermined scan time. . This leads to a decrease in detection accuracy and a decrease in response speed. That is, in order to improve detection accuracy and response speed, the number of first large lattices 102A and second large lattices 102B must be reduced (reduction in resolution) or the size of the display screen to be adapted must be reduced. For example, there arises a problem that it cannot be applied to B5 version, A4 version and larger screens.

  In contrast, in the present embodiment, as shown in FIG. 9A, the projection distance Lf between the side 103a of the first large lattice 102A and the side 103b of the second large lattice 102B is set to the length of one side of the small lattice 104. It is almost the same. Therefore, the parasitic capacitance formed between the first large lattice 102A and the second large lattice 102B is reduced. As a result, the CR time constant is also reduced, and the detection accuracy and response speed can be improved. In the combination pattern 118 of the first auxiliary line 114A and the second auxiliary line 114B, the end of the first auxiliary line 114A and the end of the second auxiliary line 114B may face each other. The line 114A is disconnected from the first large lattice 102A and electrically insulated, and the second auxiliary line 114B is also disconnected from the second large lattice 102B and electrically insulated. This does not increase the parasitic capacitance formed between the first large lattice 102A and the second large lattice 102B.

  The optimum distance of the projection distance Lf is larger than the size of the first large lattice 102A and the second large lattice 102B, but the size (line width and one side) of the small lattice 104 constituting the first large lattice 102A and the second large lattice 102B. It is preferable to appropriately set the length according to the length). In this case, if the size of the small lattice 104 is too large for the first large lattice 102A and the second large lattice 102B having a certain size, the translucency is improved, but the dynamic range of the transmission signal is reduced. Therefore, there is a risk of causing a decrease in detection sensitivity. On the other hand, if the size of the small lattice 104 is too small, the detection sensitivity is improved, but there is a limit in reducing the line width, and thus the translucency may be deteriorated.

  Therefore, the optimum value (optimum distance) of the projection distance Lf is preferably 100 to 400 μm, more preferably 200 to 300 μm, when the line width of the small lattice 104 is 1 to 9 μm. If the line width of the small lattice 104 is narrowed, the above-mentioned optimum distance can be shortened. However, since the electrical resistance increases, the CR time constant increases even if the parasitic capacitance is small, resulting in detection sensitivity. May cause a decrease in response speed and response speed. Therefore, the line width of the small lattice 104 is preferably in the above range.

  For example, based on the size of the display panel 58 or the size of the sensor unit 60 and the resolution of touch position detection (pulse period of the drive pulse, etc.), the size of the first large lattice 102A and the second large lattice 102B and the small lattice 104 The optimal distance between the first large lattice 102A and the second large lattice 102B is determined based on the line width of the small lattice 104.

  In the present embodiment, as shown in FIGS. 1 and 3, for example, the first conductive pattern 20A (mesh pattern 20) constituting the first conductive part 14A and the second conductive part constituting the second conductive part 14B. Since the pattern 20B (mesh pattern 20) forms the moire suppressing portion 26 having the above-mentioned relationship adjacent to the intersecting portion 24 of the mesh pattern 20, the light transmitted through the first conductive portion 14A and the second conductive portion 14B. The amount of integration can be made substantially the same at the intersection 24 and at portions other than the intersection 24, and image quality degradation due to moire or the like can be minimized. That is, the display screen does not become difficult to see due to moire, and the display quality and operability can be improved. Moreover, since the line width of the fine metal wires 16 is set to 1 to 15 μm and the interval between the fine metal wires 16 is set to 50 to 500 μm, high transparency and good visibility (the mesh pattern 20 is hardly noticeable) can be provided at the same time. Can do.

  When the laminated conductive film 54 is used as the touch panel 50, the protective layer 56 is laminated on the first conductive film 10A, and the first conductive pattern 20A of the first conductive film 10A is led out. The first terminal wiring pattern 86a and the second terminal wiring pattern 86b derived from the multiple second conductive patterns 20B of the second conductive film 10B are connected to a control circuit that controls scanning, for example.

  As a touch position detection method, a self-capacitance method or a mutual capacitance method can be preferably employed. That is, in the case of the self-capacitance method, voltage signals for touch position detection are sequentially supplied to the first conductive pattern 20A, and voltage signals for touch position detection are sequentially supplied to the second conductive pattern 20B. Supply. Since the capacitance between the first conductive pattern 20A and the second conductive pattern 20B facing the touch position and GND (ground) is increased by bringing the fingertip into contact with or close to the upper surface of the protective layer 56, the first conductive pattern The waveforms of the transmission signals from 20A and the second conductive pattern 20B are different from the waveforms of the transmission signals from the other conductive patterns. Accordingly, the control circuit calculates the touch position based on the transmission signal supplied from the first conductive pattern 20A and the second conductive pattern 20B. On the other hand, in the case of the mutual capacitance method, for example, a voltage signal for touch position detection is sequentially supplied to the first conductive pattern 20A, and sensing (detection of a transmission signal) is sequentially performed on the second conductive pattern 20B. Do. Since the fingertip is in contact with or close to the upper surface of the protective layer 56, the stray capacitance of the finger is added in parallel to the parasitic capacitance between the first conductive pattern 20A and the second conductive pattern 20B facing the touch position. The waveform of the transmission signal from the second conductive pattern 20B is different from the waveform of the transmission signal from the other second conductive pattern 20B. Therefore, in the control circuit, the touch position is calculated based on the order of the first conductive pattern 20A that supplies the voltage signal and the transmission signal from the supplied second conductive pattern 20B. By adopting such a self-capacitance type or mutual capacitance type touch position detection method, it is possible to detect each touch position even if two fingertips are simultaneously in contact with or close to the upper surface of the protective layer 56. Become. As prior art documents related to a projection type capacitance detection circuit, US Pat. No. 4,582,955, US Pat. No. 4,686,332, US Pat. No. 4,733,222 Specification, US Pat. No. 5,374,787, US Pat. No. 5,543,588, US Pat. No. 7,030,860, US Published Patent No. 2004/0155871, etc. is there.

  In the above-mentioned laminated conductive film 54, as shown in FIGS. 8 and 9A, the first conductive pattern 20A is formed on one main surface of the first transparent substrate 12A, and the second conductive substrate 54B is formed on the second main surface. Although the conductive pattern 20B is formed, as shown in FIG. 9B, the first conductive portion 14A is formed on one main surface of the first transparent base 12A, and the first main surface of the first transparent base 12A is The two conductive portions 14B may be formed. In this case, the second transparent substrate 12B does not exist, the first transparent substrate 12A is laminated on the second conductive portion 14B, and the first conductive portion 14A is laminated on the first transparent substrate 12A. In addition, the first conductive film 10A and the second conductive film 10B may have other layers between them, and if the first conductive portion 14A and the second conductive portion 14B are in an insulated state, they are You may arrange | position facing.

  Further, as shown in FIG. 7, it is used when the first conductive film 10A and the second conductive film 10B are bonded to each corner portion of the first conductive film 10A and the second conductive film 10B, for example. It is preferable to form the first alignment mark 94a and the second alignment mark 94b for positioning. The first alignment mark 94a and the second alignment mark 94b become a new composite alignment mark when the first conductive film 10A and the second conductive film 10B are bonded to form a laminated conductive film 54. The alignment mark also functions as an alignment mark for positioning used when the laminated conductive film 54 is installed on the display panel 58.

  In the above-described example, the first conductive film 10A and the second conductive film 10B are applied to the projected capacitive touch panel 50. However, in addition, the surface capacitive touch panel, the resistance It can also be applied to a membrane touch panel.

Next, a method for manufacturing the conductive film 10 will be described with reference to FIGS.
In the first production method, as shown in FIG. 14A, a silver salt photosensitive layer 130 is formed on the transparent substrate 12, and further, as shown in FIG. 14B, the silver salt photosensitive layer 130 is exposed. The conductive portion 14 (mesh pattern 20 or the like) is formed by a combination of the metallic silver portion 132 and the light transmissive portion 134 by developing. In this case, the metal silver portion 132 is preferably made of developed silver formed by developing silver halide. Thereafter, as shown in FIG. 14C, a conductive metal 136 such as a plating layer may be carried on the metal silver portion 132.
The mask used in the exposure for the silver salt photosensitive layer 130 may have a mask pattern corresponding to the pattern in which the moire suppressing portion 26 is formed at the intersecting portion 24 of the mesh pattern 20.

Alternatively, the silver salt photosensitive layer 130 may be exposed to a pattern in which the moire suppressing portion 26 is formed at the intersection 24 of the mesh pattern 20 by digital writing exposure on the silver salt photosensitive layer 130.
In this case, when viewed from the characteristics of the exposure energy and the image density distribution shown in FIG. 15, when the first metal fine line 16a and the second metal fine line 16b are digitally written and exposed, the first exposure energy E1 in the region where the image density is saturated. Then, exposure is performed with the second exposure energy E2 in a region where the image density is saturated at the time of digital writing exposure on the intersection 24. At this time, the first exposure energy E1 <the second exposure energy E2.
Increasing the exposure energy causes light leakage to the adjacent portion of the intersection 24, thereby generating a light bleed area, and the light bleed area adjacent to the intersection 24 in the subsequent development processing. Thus, the moiré suppression unit 26 is realized. In this method, since it is only necessary to selectively switch the exposure energy according to the position, the moire suppressing portion 26 can be easily formed adjacent to the intersecting portion 24, and the manufacturing cost can be reduced. .

As another forming method, as shown in FIG. 16A, for example, a photoresist film 142 on the copper foil 140 formed on the transparent substrate 12 is exposed and developed to form a resist pattern 144, which is shown in FIG. 16B. As described above, the conductive portion 14 (such as the mesh pattern 20) may be formed by etching the copper foil 140 exposed from the resist pattern 144. In this case, the mask used in the exposure for the photoresist film 142 may have a mask pattern corresponding to the pattern in which the moire suppressing portion 26 is formed at the intersecting portion 24 of the mesh pattern 20.
Alternatively, the photoresist film 142 may be exposed to a pattern in which the moire suppressing portion 26 is formed at the intersection 24 of the mesh pattern 20 by digital writing exposure on the photoresist film 142.

Further, as shown in FIG. 17A, a pattern 152 of the conductive portion 14 is formed by printing a paste 150 containing metal fine particles on the transparent substrate 12, and a metal plating 154 is performed on the pattern 152 as shown in FIG. 17B. Thus, the conductive portion 14 (mesh pattern 20 or the like) may be formed.
Alternatively, as shown in FIG. 18, the conductive portion 14 (mesh pattern 20 or the like) may be configured by forming a metal thin film 160 on the transparent substrate 12 by screen printing, gravure printing, or inkjet.

Next, in the conductive film 10 according to the present embodiment, a method using a silver halide photographic light-sensitive material that is a particularly preferable embodiment will be mainly described.
The manufacturing method of the conductive film 10 according to the present embodiment includes the following three forms depending on the photosensitive material and the form of development processing.
(1) A mode in which a photosensitive silver halide black-and-white photosensitive material not containing physical development nuclei is chemically developed or thermally developed to form a metallic silver portion on the photosensitive material.
(2) An embodiment in which a photosensitive silver halide black-and-white photosensitive material containing physical development nuclei in a silver halide emulsion layer is dissolved and physically developed to form a metallic silver portion on the photosensitive material.
(3) A photosensitive silver halide black-and-white photosensitive material containing no physical development nuclei and an image receiving sheet having a non-photosensitive layer containing physical development nuclei are overlapped and developed by diffusion transfer, and the metallic silver portion is non-photosensitive image-receiving sheet. Form formed on top.

The aspect (1) is an integrated black-and-white development type, and a light-transmitting conductive film such as a light-transmitting conductive film is formed on the photosensitive material. The resulting developed silver is chemically developed silver or heat developed silver, and is highly active in the subsequent plating or physical development process in that it is a filament with a high specific surface.
In the above aspect (2), the light-transmitting conductive film such as a light-transmitting conductive film is formed on the photosensitive material by dissolving silver halide grains close to the physical development nucleus and depositing on the development nucleus in the exposed portion. A characteristic film is formed. This is also an integrated black-and-white development type. Although the development action is precipitation on the physical development nuclei, it is highly active, but developed silver is a sphere with a small specific surface.
In the above aspect (3), the silver halide grains are dissolved and diffused in the unexposed area and deposited on the development nuclei on the image receiving sheet, whereby a light transmitting conductive film or the like is formed on the image receiving sheet. A conductive film is formed. This is a so-called separate type in which the image receiving sheet is peeled off from the photosensitive material.

In either embodiment, either negative development processing or reversal development processing can be selected (in the case of the diffusion transfer method, negative development processing is possible by using an auto-positive type photosensitive material as the photosensitive material). .
The chemical development, thermal development, dissolution physical development, and diffusion transfer development mentioned here have the same meanings as are commonly used in the industry, and are general textbooks of photographic chemistry such as Shinichi Kikuchi, “Photochemistry” (Kyoritsu Publishing) (Published in 1955), C.I. E. K. It is described in "The Theory of Photographic Processes, 4th ed." Edited by Mees (Mcmillan, 1977). Although this case is an invention related to liquid processing, a technique of applying a thermal development system as another development system can also be referred to. For example, the techniques described in Japanese Patent Application Laid-Open Nos. 2004-184893, 2004-334077, and 2005-010752, and Japanese Patent Application Nos. 2004-244080 and 2004-085655 can be applied. it can.

Here, the configuration of each layer of the conductive film 10 according to the present embodiment will be described in detail below.
[Transparent substrate 12]
Examples of the transparent substrate 12 include a plastic film, a plastic plate, and a glass plate.
Examples of the raw material for the plastic film and the plastic plate include polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN); polyolefins such as polyethylene (PE), polypropylene (PP), polystyrene, and EVA; Resin; In addition, polycarbonate (PC), polyamide, polyimide, acrylic resin, triacetyl cellulose (TAC) and the like can be used.
As the transparent substrate 12, PET (melting point: 258 ° C), PEN (melting point: 269 ° C), PE (melting point: 135 ° C), PP (melting point: 163 ° C), polystyrene (melting point: 230 ° C), polyvinyl chloride ( A plastic film or a plastic plate having a melting point of about 290 ° C. or less, such as polyvinylidene chloride (melting point: 212 ° C.) or TAC (melting point: 290 ° C.), is preferred. From these viewpoints, PET is preferable. Since the conductive film 10 for a touch panel is required to be transparent, the transparency of the transparent substrate 12 is preferably high.

[Silver salt photosensitive layer 130]
The silver salt photosensitive layer 130 serving as the conductive portion 14 (such as the mesh pattern 20) of the conductive film 10 contains additives such as a solvent and a dye in addition to the silver salt and the binder.
Examples of the silver salt used in the present embodiment include inorganic silver salts such as silver halide and organic silver salts such as silver acetate. In the present embodiment, it is preferable to use silver halide having excellent characteristics as an optical sensor.
Coated silver amount of the silver salt photosensitive layer 130 (the coating amount of silver salt) is preferably from 1 to 30 g / ^{m 2} in terms of silver, more preferably ^{1~25g / m 2, 5~20g / m} 2 and more preferable. By setting the amount of coated silver in the above range, a desired surface resistance can be obtained when the conductive film 10 is used.

Examples of the binder used in this embodiment include gelatin, polyvinyl alcohol (PVA), polyvinyl pyrrolidone (PVP), starch and other polysaccharides, cellulose and derivatives thereof, polyethylene oxide, polyvinyl amine, chitosan, polylysine, and polyacryl. Examples include acid, polyalginic acid, polyhyaluronic acid, carboxycellulose and the like. These have neutral, anionic, and cationic properties depending on the ionicity of the functional group.
Content of the binder contained in the silver salt photosensitive layer 130 of this Embodiment is not specifically limited, It can determine suitably in the range which can exhibit a dispersibility and adhesiveness. The binder content in the silver salt photosensitive layer 130 is preferably ¼ or more, and more preferably ½ or more in terms of a silver / binder volume ratio. The silver / binder volume ratio is preferably 100/1 or less, and more preferably 50/1 or less. The silver / binder volume ratio is more preferably 1/1 to 4/1. Most preferably, it is 1/1 to 3/1. By setting the silver / binder volume ratio in the silver salt photosensitive layer 130 within this range, even when the amount of applied silver is adjusted, variation in resistance value can be suppressed, and the conductive film 10 having uniform surface resistance can be obtained. it can. The silver / binder volume ratio is converted from the amount of silver halide / binder amount (weight ratio) of the raw material to the amount of silver / binder amount (weight ratio), and the amount of silver / binder amount (weight ratio) is further converted to the amount of silver. / It can obtain | require by converting into binder amount (volume ratio).

<Solvent>
The solvent used for forming the silver salt photosensitive layer 130 is not particularly limited. For example, water, organic solvents (for example, alcohols such as methanol, ketones such as acetone, amides such as formamide, dimethyl, etc. Sulfoxides such as sulfoxide, esters such as ethyl acetate, ethers, etc.), ionic liquids, and mixed solvents thereof.
Content of the solvent used for the silver salt photosensitive layer 130 of this Embodiment is the range of 30-90 mass% with respect to the total mass of the silver salt, binder, etc. which are contained in the silver salt photosensitive layer 130, 50 It is preferable to be in the range of ˜80 mass%.

<Other additives>
There are no particular restrictions on the various additives used in the present embodiment, and known ones can be preferably used.
[Other layer structure]
A protective layer (not shown) may be provided on the silver salt photosensitive layer 130. In the present embodiment, the “protective layer” means a layer made of a binder such as gelatin or a high molecular polymer, on the silver salt photosensitive layer 130 having photosensitivity in order to exhibit the effect of preventing scratches and improving mechanical properties. Formed. The thickness is preferably 0.5 μm or less. The coating method and forming method of the protective layer are not particularly limited, and a known coating method and forming method can be appropriately selected. Further, for example, an undercoat layer can be provided below the silver salt photosensitive layer 130.

Next, each process of the manufacturing method of the electroconductive film 10 is demonstrated.
[exposure]
In the present embodiment, the case where the mesh pattern 20 is applied by a printing method is included, but the mesh pattern 20 is formed by exposure, development, and the like except for the printing method. That is, exposure is performed on a photosensitive material having a silver salt photosensitive layer 130 provided on the transparent substrate 12 or a photosensitive material coated with a photopolymer for photolithography. The exposure can be performed using electromagnetic waves. Examples of the electromagnetic wave include light such as visible light and ultraviolet light, and radiation such as X-rays. Furthermore, a light source having a wavelength distribution may be used for exposure, or a light source having a specific wavelength may be used.

[Development processing]
In the present embodiment, after the silver salt photosensitive layer 130 is exposed, further development processing is performed. The development processing can be performed by a normal development processing technique used for silver salt photographic film, photographic paper, printing plate-making film, photomask emulsion mask, and the like. The developer is not particularly limited, but a PQ developer, MQ developer, MAA developer and the like can also be used. Commercially available products include, for example, CN-16, CR-56, CP45X, and FD prescribed by FUJIFILM Corporation. -3, Papitol, a developer such as C-41, E-6, RA-4, D-19, D-72, etc. formulated by KODAK, or a developer included in the kit can be used. A lith developer can also be used.
The development processing in the present invention can include a fixing processing performed for the purpose of removing and stabilizing the silver salt in the unexposed portion. For the fixing process in the present invention, a fixing process technique used for silver salt photographic film, photographic paper, film for printing plate making, emulsion mask for photomask, and the like can be used.
Although the conductive film 10 is obtained through the above steps, the surface resistance of the obtained conductive film 10 is 0.1 to 100 ohm / sq. It is preferable that it exists in the range. The lower limit is 1 ohm / sq. Is preferably 10 ohm / sq. More preferably. The upper limit is 70 ohm / sq. And preferably 50 ohm / sq. More preferably. Further, the conductive film 10 after the development process may be further subjected to a calendar process, and the desired surface resistance can be adjusted by the calendar process.

[Physical development and plating]
In the present embodiment, for the purpose of improving the conductivity of the metal silver portion 132 formed by the exposure and development processing, physical development and / or plating treatment for supporting the conductive metal particles on the metal silver portion 132. May be performed. In the present invention, the conductive metal particles may be supported on the metallic silver portion 132 by only one of physical development and plating treatment, or the conductive metal particles are supported on the metallic silver portion by combining physical development and plating treatment. May be. In addition, the thing which performed the physical development and / or the plating process to the metal silver part is called "conductive metal part".

[Conductive metal part]
The lower limit of the line width of the conductive metal portion of the present embodiment (the line width of the fine metal wire 16) is preferably 1 μm or more, 3 μm or more, 4 μm or more, or 5 μm or more, and the upper limit is 15 μm or less, 10 μm or less, 9 μm or less, 8 μm or less is preferable. When the line width is less than the above lower limit value, the conductivity becomes insufficient, so that when used for a touch panel, the detection sensitivity becomes insufficient. On the other hand, when the above upper limit is exceeded, moire caused by the mesh pattern 20 becomes noticeable, or the visibility is deteriorated when the touch panel 50 is used. In addition, by being in the said range, the moire of the mesh pattern 20 is improved and visibility becomes especially good. The line spacing of the fine metal wires 16 is preferably 65 μm or more and 500 μm or less, more preferably 100 μm or more and 400 μm or less, more preferably 150 μm or more and 300 μm or less, and most preferably 210 μm or more and 250 μm or less. The conductive metal portion may have a portion whose line width is wider than 200 μm for the purpose of ground connection or the like.
The conductive metal portion in the present embodiment preferably has an aperture ratio of 85% or more, more preferably 90% or more, and most preferably 95% or more from the viewpoint of visible light transmittance. The aperture ratio is the ratio of the entire light-transmitting portion excluding conductive portions such as the first large lattice 102A, the first connection portion 106A, the second large lattice 102B, the second connection portion 106B, and the small lattice 104. For example, the aperture ratio of a square lattice having a line width of 15 μm and a pitch of 300 μm is 90%.

[Light transmissive part]
The “light transmissive part” in the present embodiment means a part having a light transmissive property other than the conductive metal part in the conductive film 10. As described above, the transmittance in the light transmissive portion is 90% or more, preferably the transmittance indicated by the minimum value of the transmittance in the wavelength region of 380 to 780 nm excluding the contribution of light absorption and reflection of the transparent substrate 12, 95% or more, more preferably 97% or more, even more preferably 98% or more, and most preferably 99% or more.
Regarding the exposure method, a method through a glass mask or a pattern exposure method by laser drawing is preferable.

[Conductive film 10]
The thickness of the transparent substrate 12 in the conductive film 10 according to the present embodiment is preferably 5 to 350 μm, and more preferably 30 to 150 μm. If it is the range of 5-350 micrometers, the transmittance | permeability of a desired visible light will be obtained and handling will also be easy.
The thickness of the metallic silver portion provided on the transparent substrate 12 can be appropriately determined according to the coating thickness of the silver salt photosensitive layer coating applied on the transparent substrate 12. Although the thickness of the metallic silver part 132 can be selected from 0.001 mm to 0.2 mm, it is preferably 30 μm or less, more preferably 20 μm or less, and further preferably 0.01 to 9 μm. Preferably, it is most preferable that it is 0.05-5 micrometers. Moreover, it is preferable that the metal silver part 132 is pattern shape. The metallic silver portion 132 may be a single layer or may have a multilayer structure of two or more layers. When the metallic silver portion 132 has a pattern shape and has a multilayer structure of two or more layers, different color sensitivities can be imparted so that it can be exposed to different wavelengths. Thereby, when the exposure wavelength is changed and exposed, a different pattern can be formed in each layer.
The thickness of the conductive metal part is preferably as the thickness of the touch panel 50 is thinner because the viewing angle of the display panel is wider as the thickness of the conductive metal part is reduced. From such a viewpoint, the thickness of the layer made of the conductive metal carried on the conductive metal part is preferably less than 9 μm, more preferably 0.1 μm or more and less than 5 μm, and more preferably 0.1 μm or more. More preferably, it is less than 3 μm.

In the present embodiment, a metal silver portion 132 having a desired thickness is formed by controlling the coating thickness of the silver salt photosensitive layer 130 described above, and a layer made of conductive metal particles by physical development and / or plating treatment. Therefore, even the conductive film 10 having a thickness of less than 5 μm, preferably less than 3 μm can be easily formed.
In the method for manufacturing the conductive film 10 according to the present embodiment, the steps such as plating are not necessarily performed. This is because in the method for manufacturing the conductive film 10 according to the present embodiment, a desired surface resistance can be obtained by adjusting the amount of silver applied to the silver salt photosensitive layer 130 and the silver / binder volume ratio. In addition, you may perform a calendar process etc. as needed.

(Hardening after development)
It is preferable to perform the film hardening process by immersing the film in a hardener after the silver salt photosensitive layer 130 is developed. Examples of the hardener include dialdehydes such as glutaraldehyde, adipaldehyde, 2,3-dihydroxy-1,4-dioxane, and those described in JP-A-2-141279 such as boric acid. .
The conductive film 10 and the laminated conductive film 54 may be provided with a functional layer such as an antireflection layer or a hard coat layer.

  In addition, this invention can be used in combination with the technique of the publication gazette and international publication pamphlet which are described in following Table 1 and Table 2. FIG. Notations such as “JP,” “Gazette” and “No. Pamphlet” are omitted.

  Hereinafter, the present invention will be described more specifically with reference to examples of the present invention. In addition, the material, usage-amount, ratio, processing content, processing procedure, etc. which are shown in the following Examples can be changed suitably unless it deviates from the meaning of this invention. Accordingly, the scope of the present invention should not be construed as being limited by the specific examples shown below.

  About the electroconductive film which concerns on Examples 1-32, Comparative Examples 1-20, and Reference Examples 1-8, surface resistance and the transmittance | permeability were measured and the moire and visibility were evaluated. Tables 3 and 4 show the breakdown of Examples 1 to 32, Comparative Examples 1 to 20, and Reference Examples 1 to 8, and the measurement results and evaluation results.

<Examples 1-32, Comparative Examples 1-20, Reference Examples 1-8>
(Silver halide photosensitive material)
An emulsion containing 10.0 g of gelatin per 150 g of Ag in an aqueous medium and containing silver iodobromochloride grains having an average equivalent sphere diameter of 0.1 μm (I = 0.2 mol%, Br = 40 mol%) was prepared. .
In this emulsion, K ₃ Rh ₂ Br ₉ and K ₂ IrCl ₆ were added so as to have a concentration of 10 ⁻⁷ (mol / mol silver), and silver bromide grains were doped with Rh ions and Ir ions. . After adding Na ₂ PdCl ₄ to this emulsion and further performing gold-sulfur sensitization using chloroauric acid and sodium thiosulfate, together with the gelatin hardener, the coating amount of silver was 10 g / m ^2. The coating was applied on the first transparent substrate 12A and the second transparent substrate 12B (both here are polyethylene terephthalate (PET)). At this time, the volume ratio of Ag / gelatin was 2/1.
Coating was performed for 20 m with a width of 25 cm on a PET support having a width of 30 cm, and both ends were cut off by 3 cm so as to leave a central portion of the coating, thereby obtaining a roll-shaped silver halide photosensitive material.

(exposure)
In the exposure of the silver halide photosensitive material, exposure heads using DMD (digital mirror device) described in the embodiment of Japanese Patent Application Laid-Open No. 2004-1224 are arranged so as to have a width of 25 cm, and the silver salt of the photosensitive material The exposure head and exposure stage are curved and arranged so that the laser beam forms an image on the photosensitive layer 130, and the photosensitive material feeding mechanism and winding mechanism are attached, and the tension control and winding and feeding mechanism of the exposure surface are also provided. This was performed by a continuous exposure apparatus provided with a bend having a buffering action so that the speed fluctuation does not affect the speed of the exposed portion. The wavelength of exposure was 400 nm, the beam shape was approximately 12 μm, and the output of the laser light source was 100 μJ.
The exposure was performed according to the following settings, with the interval (line interval) between the fine line patterns that will later become the metal fine lines 16 being set to 300 μm so that the mesh pattern 20 was baked onto the silver salt photosensitive layer 130. Table 3 shows the line width of the fine metal wires 16 constituting the mesh pattern 20, the area Sa of the intersecting portion 24, the area Sb of the moire suppressing portion 26, and the like.
In order to expose the silver salt photosensitive layer 130 so as to have a pattern in which the moire suppressing portion 26 is formed adjacent to the intersecting portion 24 of the mesh pattern 20, an exposure method in which three exposure heads are linked is adopted. did.

  That is, the first exposure head draws an exposure pattern on the silver salt photosensitive layer 130 by irradiating a single beam while the laser beam reciprocates in the direction perpendicular to the conveying direction of the silver salt photosensitive layer 130. Accordingly, the beam is obliquely drawn at 45 ° on the silver salt photosensitive layer 130 in accordance with the ratio of the conveyance speed of the silver salt photosensitive layer 130 and the moving speed of the head in the direction perpendicular to the conveyance direction. When it reaches the end of, drawing is performed in the reverse diagonal direction in conjunction with the reciprocating motion of the head.

  The second exposure head draws an exposure pattern on the silver salt photosensitive layer 130 by irradiating a single beam while the laser beam reciprocates in the direction perpendicular to the transport direction of the silver salt photosensitive layer 130. 1 is the same as the exposure head 1 except that the movement start period of the head is separated from the first head by 180 degrees or a multiple cycle thereof. Therefore, when the first exposure head performs oblique drawing from one end portion of the silver salt photosensitive layer 130, the second exposure head moves from the other end portion of the silver salt photosensitive layer 130 in the moving direction of the first exposure head. The image is drawn obliquely on the silver salt photosensitive layer 130 while moving in the opposite direction. In this way, the mesh pattern 20 is formed.

  The third exposure head is a fixed head, whereas the third exposure head is a movable head in which the laser beams of the first and second exposure heads reciprocate in a direction perpendicular to the transport direction of the silver salt photosensitive layer 130. Thus, the first and second exposure heads are provided so that the head passes through the intersection of the laser beams of the first and second exposure heads. When a plurality of intersecting portions are drawn in the width direction of the silver salt photosensitive layer 130, the third head corresponding to the number is provided. The laser oscillation period is set so that the laser beam irradiated from the third head is irradiated with the intermittent laser beam for a short time only when the third head passes through the intersection. Further, the irradiation time is set to a time during which the moire suppressing unit 26 having a desired size can be drawn.

(Development processing)
・ Developer 1L formulation Hydroquinone 20 g
Sodium sulfite 50 g
Potassium carbonate 40 g
Ethylenediamine tetraacetic acid 2 g
Potassium bromide 3 g
Polyethylene glycol 2000 1 g
Potassium hydroxide 4 g
Adjusted to pH 10.3 and formulated 1L fixer ammonium thiosulfate solution (75%) 300 ml
Ammonium sulfite monohydrate 25 g
1,3-diaminopropane tetraacetic acid 8 g
Acetic acid 5 g
Ammonia water (27%) 1 g
Adjusted to pH 6.2 Processed photosensitive material using the above processing agent using Fujifilm's automatic processor FG-710PTS Processing conditions: development 35 ° C. for 30 seconds, fixing 34 ° C. for 23 seconds, washed water (5 L / Min) for 20 seconds.

(Reference Example 1)
In the produced conductive film according to Reference Example 1, the line width of the mesh pattern 20 is 0.5 μm (line interval 300 μm), the area Sa of the intersecting portion 24 is 0.25 μm ² , and the area Sb of the moire suppressing portion 26 is 0.00. It was 0050 μm ² .
(Reference Examples 2 to 4)
A conductive film according to Example 2, 3 and 4, like the area Sb of the moire preventing part 26 0.2250μm ² respectively, except that was 0.2750Myuemu ² and 1.2500Myuemu ^2, Reference Example 1 described above It was made.
(Comparative Examples 1 and 2)
A conductive film according to Comparative Examples 1 and 2, except that the area Sb of the moire preventing part 26, respectively 0.0025 ² and 1.5000Myuemu ² was prepared in the same manner as in Reference Example 1 described above.

Example 1
In the manufactured conductive film according to Example 1, the line width of the mesh pattern 20 is 1.0 μm (line interval 300 μm), the area Sa of the intersecting portion 24 is 1.00 μm ² , and the area Sb of the moire suppressing portion 26 is 0.00. It was 0200 μm ² .
(Examples 2 to 4)
A conductive film according to Examples 2, 3 and 4, the area Sb of the moire preventing part 26 respectively 0.9000Myuemu ^2, except that the 1.1000Myuemu ² and 5.0000Myuemu ^2, similarly to Example 1 described above It was made.
(Comparative Examples 3 and 4)
A conductive film according to Comparative Examples 3 and 4, except that the area Sb of the moire preventing part 26, respectively 0.0100Myuemu ² and 6.0000Myuemu ² was prepared in the same manner as in Example 1 described above.

(Example 5)
In the produced conductive film according to Example 5, the line width of the mesh pattern 20 is 3.0 μm (the line interval is 300 μm), the area Sa of the intersecting portion 24 is 9.00 μm ² , and the area Sb of the moire suppressing portion 26 is 0.00. It was 1800 μm ² .
(Examples 6 to 8)
A conductive film according to Examples 6, 7 and 8, 8.1000Myuemu ² the area Sb of the moire preventing part 26, respectively, except that was 9.9000Myuemu ² and 45.0000Myuemu ^2, similarly to Example 5 described above It was made.
(Comparative Examples 5 and 6)
A conductive film according to Comparative Examples 5 and 6, except that the area Sb of the moire preventing part 26, respectively 0.0900Myuemu ² and 54.0000Myuemu ² was produced in the same manner as in Example 5 described above.

Example 9
In the produced conductive film according to Example 9, the mesh pattern 20 has a line width of 4.0 μm (a line interval of 300 μm), the intersection part 24 has an area Sa of 16.00 μm ² , and the moire suppressing part 26 has an area Sb of 0.00. It was 3200 μm ² .
(Examples 10 to 12)
A conductive film according to Examples 10, 11 and 12, 14.4000Myuemu ² the area Sb of the moire preventing part 26, respectively, except that was 17.6000Myuemu ² and 80.0000Myuemu ^2, as in Example 9 described above It was made.
(Comparative Examples 7 and 8)
A conductive film according to Comparative Examples 7 and 8, except that the area Sb of the moire preventing part 26, respectively 0.1600Myuemu ² and 96.0000Myuemu ² was produced in the same manner as in Example 9 described above.

(Example 13)
In the produced conductive film according to Example 13, the line width of the mesh pattern 20 is 5.0 μm (the line interval is 300 μm), the area Sa of the intersecting portion 24 is 25.00 μm ² , and the area Sb of the moire suppressing portion 26 is 0.00. It was 5000 μm ² .
(Examples 14 to 16)
A conductive film according to Examples 14, 15 and 16, the area Sb of the moire preventing part 26 respectively 22.5000Myuemu ^2, except that the 27.5000Myuemu ² and 125.0000Myuemu ^2, similarly to Example 13 described above It was made.
(Comparative Examples 9 and 10)
A conductive film according to Comparative Examples 9 and 10, except that the area Sb of the moire preventing part 26, respectively 0.2500Myuemu ² and 150.0000Myuemu ² was produced in the same manner as in Example 13 described above.

(Example 17)
In the produced conductive film according to Example 17, the line width of the mesh pattern 20 is 8.0 μm (line interval 300 μm), the area Sa of the intersecting portion 24 is 64.00 μm ² , and the area Sb of the moire suppressing portion 26 is 1. It was 2800 μm ² .
(Examples 18 to 20)
A conductive film according to Example 18, 19 and 20, the area Sb of the moire preventing part 26 respectively 57.6000μm ^2, 70.4000μm ^2, and except that the 320.0000Myuemu ² is as in Example 17 described above It produced similarly.
(Comparative Examples 11 and 12)
A conductive film according to Comparative Examples 11 and 12, except that the area Sb of the moire preventing part 26, respectively 0.6400Myuemu ² and 384.0000Myuemu ² was produced in the same manner as in Example 17 described above.

(Example 21)
In the produced conductive film according to Example 21, the line width of the mesh pattern 20 is 9.0 μm (line interval 300 μm), the area Sa of the intersecting portion 24 is 81.00 μm ² , and the area Sb of the moire suppressing portion 26 is 1. 6200 μm ² .
(Examples 22 to 24)
A conductive film according to Example 22, 23 and 24, the area Sb of the moire preventing part 26 respectively 72.9000Myuemu ^2, except that the 89.1000Myuemu ² and 405.0000Myuemu ^2, similarly to Example 21 described above It was made.
(Comparative Examples 13 and 14)
A conductive film according to Comparative Examples 13 and 14, except that the area Sb of the moire preventing part 26, respectively 0.8100Myuemu ² and 486.0000Myuemu ² was produced in the same manner as in Example 21 described above.

(Example 25)
In the produced conductive film according to Example 25, the line width of the mesh pattern 20 is 10.0 μm (the line interval is 300 μm), the area Sa of the intersecting portion 24 is 100.00 μm ² , and the area Sb of the moire suppressing portion 26 is 2. It was 0000 μm ² .
(Examples 26 to 28)
A conductive film according to Example 26, 27 and 28, the area Sb of the moire preventing part 26 respectively 90.0000Myuemu ^2, except that the 110.0000Myuemu ² and 500.0000Myuemu ^2, similarly to Example 25 described above It was made.
(Comparative Examples 15 and 16)
A conductive film according to Comparative Examples 15 and 16, except that the area Sb of the moire preventing part 26, respectively 1.0000Myuemu ² and 600.0000Myuemu ² was produced in the same manner as in Example 25 above.

(Example 29)
In the produced conductive film according to Example 29, the line width of the mesh pattern 20 is 15.0 μm (the line interval is 300 μm), the area Sa of the intersecting portion 24 is 225.00 μm ² , and the area Sb of the moire suppressing portion 26 is 4. It was 5000 μm ² .
(Examples 30 to 32)
A conductive film according to Example 30, 31 and 32, the area Sb of the moire preventing part 26 respectively 202.5000Myuemu ^2, except that the 247.5000Myuemu ² and 1125.0000Myuemu ^2, similarly to Example 29 described above It was made.
(Comparative Examples 17 and 18)
A conductive film according to Comparative Examples 17 and 18, except that the area Sb of the moire preventing part 26, respectively 2.2500Myuemu ² and 1350.0000Myuemu ² was produced in the same manner as in Example 29 above.

(Reference Example 5)
The produced conductive film according to Reference Example 5 has a mesh pattern 20 having a line width of 20.0 μm (a line interval of 300 μm), an intersection Sa having an area Sa of 400.00 μm ² , and a moire suppressing part 26 having an area Sb of 8. It was 0000 μm ² .
(Reference Examples 6-8)
A conductive film according to Example 6, 7 and 8, 360.0000Myuemu ² the area Sb of the moire preventing part 26, respectively, except that was 440.0000Myuemu ² and 2000.0000Myuemu ^2, the same manner as in Reference Example 5 described above It was made.
(Comparative Examples 19 and 20)
A conductive film according to Comparative Examples 19 and 20, except that the area Sb of the moire preventing part 26, respectively 4.0000Myuemu ² and 2400.0000Myuemu ² was prepared in the same manner as in Reference Example 5 described above.

(Surface resistance measurement)
In order to confirm the quality of the detection accuracy, the average value of the surface resistivity of the conductive film was measured at any 10 locations with a Lorestar GP (model number MCP-T610) series 4-probe probe (ASP) manufactured by Dia Instruments. It is.
(Measurement of transmittance)
In order to confirm the transparency, the transmittance of the conductive film was measured using a spectrophotometer.
(Evaluation of moire)
For Examples 1 to 32, Comparative Examples 1 to 20, and Reference Examples 1 to 8, after a conductive film was pasted on the display panel 58 of the display device 57, the display device 57 was installed on a turntable, and the display device 57 is driven to display white. In this state, the rotating disk was rotated between a bias angle of −20 ° and + 20 °, and the moire was visually observed and evaluated. As a display for evaluation, Pavilion Notebook PC dm1a (11.6 inch glossy liquid crystal WXGA / 1366 × 768) manufactured by HP was used.

  Moire is evaluated at an observation distance of 0.5 m from the display screen of the display device 57. When moire does not appear, ○, when moire is seen at a level with no problem, Δ, moire becomes apparent. The case where it did is made x. And, as an overall score, A when the angle range that becomes ◯ is 10 ° or more, B when the angle range that becomes ◯ is less than 10 °, and there is no angle range that becomes ○, and the angle range that becomes × is less than 30 ° In the case of D, the case where there was no angle range for C and ◯ and the angle range for X was 30 ° or more was defined as D.

  From Table 3 and Table 4, Examples 1-32 which satisfy Sa * 0.01 <Sb <= Sa * 5.00 were all favorable in moire, electroconductivity, and translucency. In particular, Examples 2, 3, 6, 7, 10, 11, 14, 15, 18, 19, 22, 23, 26, 27, 30, satisfying Sa × 0.90 ≦ Sb ≦ Sa × 1.10. No moire 31 was generated. On the other hand, in all of Comparative Examples 1 to 20, moire became apparent.

  Projection capacitive touch panels were produced using the conductive films according to Examples 1 to 32 described above. Neither moiré was apparent. In addition, when operated by touching with a finger, it was found that the response speed was fast and the detection sensitivity was excellent. Further, when two or more points were touched and operated, a good result was obtained in the same manner, and it was confirmed that multi-touch could be supported.

  In addition, the touch panel provided with the conductive film for a touch panel according to the present invention and the conductive film for a touch panel are not limited to the above-described embodiments, and various configurations can be adopted without departing from the gist of the present invention. It is.

DESCRIPTION OF SYMBOLS 10 ... Conductive film 10A ... 1st conductive film 10B ... 2nd conductive film 12 ... Transparent base | substrate 14 ... Conductive part 16 ... Metal fine wire 18 ... Opening part 20 ... Mesh pattern 22 ... Mesh shape 24 ... Intersection part 26 ... Moire Suppression part 26a-26d ... 1st suppression part-4th suppression part 50 ... Touch panel 54 ... Laminated conductive film

Claims (8)

A touch panel provided with a conductive film for a touch panel installed on a display panel,
The conductive film for a touch panel includes a conductive portion having a mesh pattern made of fine metal wires,
A moire suppression part is formed at the intersection of the mesh pattern,
When the area of the intersecting portion is Sa and the area of the moire suppressing portion is Sb,
Sa × 0.01 <Sb ≦ Sa × 5.00
The touch panel characterized by being. A conductive film for a touch panel installed on a display panel of a display device,
Provided with a conductive part having a mesh pattern of fine metal wires,
A moire suppression part is formed at the intersection of the mesh pattern,
When the area of the intersecting portion is Sa and the area of the moire suppressing portion is Sb,
Sa × 0.01 <Sb ≦ Sa × 5.00
A conductive film for a touch panel, characterized in that The conductive film for a touch panel according to claim 2,
Sa × 0.90 ≦ Sb ≦ Sa × 1.10.
A conductive film for a touch panel, characterized in that In the conductive film for touchscreens of Claim 2 or 3,
The intersecting portion is configured by intersecting the metal first fine line and the second fine line constituting the mesh pattern,
The moire suppression unit is
A first suppression portion formed between one side surface of the first thin wire and one side surface of the second thin wire;
A second restraining portion formed between one side surface of the first thin wire and the other side surface of the second thin wire;
A third restraining portion formed between the other side surface of the first thin wire and one side surface of the second thin wire;
A conductive film for a touch panel, comprising: a fourth restraining portion formed between the other side surface of the first thin wire and the other side surface of the second thin wire. The conductive film for a touch panel according to claim 4,
When each area of the first deterrence unit, the second deterrence unit, the third deterrence unit, and the fourth deterrence unit is Sb1, Sb2, Sb3, Sb4,
Sb = Sb1 + Sb2 + Sb3 + Sb4
A conductive film for a touch panel, characterized in that In the conductive film for touchscreens of any one of Claims 2-5,
A conductive film for a touch panel, wherein the thin wire has a line width of 1 to 15 μm. In the conductive film for touchscreens of any one of Claims 2-5,
A conductive film for a touch panel, wherein the thin wire has a line width of 1 to 9 μm. In the conductive film for touchscreens of any one of Claims 2-7,
The conductive film for a touch panel, wherein the fine wires have a line interval of 65 to 500 μm.

Images