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JP2012028681A - Bonding body of electrode member and bonding method of electrode member - Google Patents

Bonding body of electrode member and bonding method of electrode member Download PDF

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Publication number
JP2012028681A
JP2012028681A JP2010168184A JP2010168184A JP2012028681A JP 2012028681 A JP2012028681 A JP 2012028681A JP 2010168184 A JP2010168184 A JP 2010168184A JP 2010168184 A JP2010168184 A JP 2010168184A JP 2012028681 A JP2012028681 A JP 2012028681A
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Prior art keywords
protrusion
solder
gap
electrode member
electrode
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Takuya Ishizaki
卓也 石崎
Masami Takeuchi
政美 竹内
Shigekazu Higashimoto
繁和 東元
Munehiko Masutani
宗彦 増谷
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Toyota Industries Corp
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Toyota Industries Corp
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Abstract

PROBLEM TO BE SOLVED: To provide a bonding body of an electrode member which ensures bonding of stabilized quality, and to provide a bonding method of an electrode member.SOLUTION: A bonding body 101 of an electrode member is a body which bonds the electrode member, i.e. a lead 10, to a semiconductor element 3 by means of solder. The lead 10 has a first protrusion 11a and a second protrusion 12a where the respective ends 11ac and 12ac face each other across a gap g10. The first protrusion 11a and the second protrusion 12a are arranged to face the semiconductor element 3, and bonded to the semiconductor element 3 by means of solder supplied from the gap g10.

Description

本発明は、電極部材の接合体及びその接合方法に関する。   The present invention relates to a joined body of electrode members and a joining method thereof.

従来のはんだを使用した電極部材の接合体として、例えば特許文献1に、半導体素子の一側面及びその反対側面にC面放熱板電極及び導体ブロックがはんだ層を介して接合され、さらに、導体ブロックにおける半導体素子と反対側の面にE面放熱板電極がはんだ層を介して接合された半導体装置が記載されている。この半導体装置では、E面放熱板電極にこれを貫通するはんだ注入孔が形成されている。そして、E面放熱板電極と導体ブロックとを接続する際、E面放熱板電極は、はんだ注入孔を導体ブロックに対向させ、導体ブロックと所定間隔をあけてC面放熱板電極と平行に配置される。さらに、はんだ注入孔からE面放熱板電極及び導体ブロックの間にはんだが供給され、その後、供給されたはんだが硬化されてはんだ層を形成し、E面放熱板電極及び導体ブロックがはんだ層を介して接続される。   As a joined body of electrode members using a conventional solder, for example, in Patent Document 1, a C-surface heat radiation plate electrode and a conductor block are joined to one side surface and the opposite side surface of a semiconductor element via a solder layer. Describes a semiconductor device in which an E-plane heat dissipation plate electrode is bonded to a surface on the opposite side of the semiconductor element via a solder layer. In this semiconductor device, a solder injection hole penetrating the E surface heat sink electrode is formed. When the E-surface heat sink electrode and the conductor block are connected, the E-surface heat sink electrode is arranged in parallel with the C-surface heat sink electrode with the solder injection hole facing the conductor block and a predetermined distance from the conductor block. Is done. Further, solder is supplied from the solder injection hole between the E-surface heat radiation plate electrode and the conductor block, and then the supplied solder is cured to form a solder layer, and the E-surface heat radiation plate electrode and the conductor block form the solder layer. Connected through.

特開2004−303869号公報JP 2004-303869 A

しかしながら、特許文献1の半導体装置では、はんだ注入孔の上方及び半導体装置の側方からだけしか、E面放熱板電極及び導体ブロックの間に形成されたはんだ層を確認することができない。このため、導体ブロック側となるE面放熱板電極の裏面において、はんだ注入孔の周囲にE面放熱板電極とはんだ層との間で空隙が発生しても確認することができない。よって、E面放熱板電極と導体ブロックとの間がはんだで十分に充填されていない場合でもそれを確認できず、充填不足によりE面放熱板電極とはんだ層との接合面積が不足した状態のままとなるため、完成後の半導体装置においてE面放熱板電極の接合強度が不足するという問題が起こる。すなわち、特許文献1の半導体装置は、E面放熱板電極について接合強度を確保することのできる安定した品質の接合を確保することができないという問題がある。   However, in the semiconductor device of Patent Document 1, the solder layer formed between the E-surface heat radiation plate electrode and the conductor block can be confirmed only from above the solder injection hole and from the side of the semiconductor device. For this reason, in the back surface of the E surface heat sink electrode on the conductor block side, even if a gap is generated between the E surface heat sink electrode and the solder layer around the solder injection hole, it cannot be confirmed. Therefore, even when the space between the E-surface heat radiation plate electrode and the conductor block is not sufficiently filled with solder, it cannot be confirmed, and the bonding area between the E-surface heat radiation plate electrode and the solder layer is insufficient due to insufficient filling. Therefore, there is a problem that the bonding strength of the E-plane heat sink electrode is insufficient in the completed semiconductor device. That is, the semiconductor device of Patent Document 1 has a problem that it is not possible to ensure stable quality bonding that can ensure the bonding strength of the E-plane heat dissipation plate electrode.

この発明は、このような問題点を解決するためになされたものであり、安定した品質の接合を可能にする電極部材の接合体及び電極部材の接合方法を提供することを目的とする。   The present invention has been made to solve such problems, and an object of the present invention is to provide a joined body of electrode members and a joining method of electrode members that enable stable quality joining.

この発明に係る電極部材の接合体は、電極部材がはんだによって接合対象部材に接合される電極部材の接合体であって、電極部材は間隙を挟んでそれぞれの端部が向き合う第一突出部及び第二突出部を有し、第一突出部及び第二突出部を接合対象部材に対向させて配置させ、間隙から供給されるはんだによって第一突出部及び第二突出部と接合対象部材とが接合される。   An electrode member assembly according to the present invention is an electrode member assembly in which an electrode member is bonded to a member to be bonded by solder, and the electrode member includes first protrusions facing each other across a gap, and The first protrusion and the second protrusion are arranged by facing the member to be bonded, and the first protrusion and the second protrusion and the member to be bonded are provided by the solder supplied from the gap. Be joined.

また、第一突出部の端部及び第二突出部の端部は、窪んでいてもよい。
また、第一突出部及び第二突出部は、先端に近づくにしたがい細くなっていてもよい。
また、電極部材は、接続部と、接続部から延びる第一アーム部及び第二アーム部とを有し、第一アーム部は、第一突出部を有し、第二アーム部は、第二突出部を有してもよい。
Moreover, the edge part of a 1st protrusion part and the edge part of a 2nd protrusion part may be depressed.
Moreover, the 1st protrusion part and the 2nd protrusion part may become thin as it approaches the front-end | tip.
The electrode member includes a connection portion, a first arm portion and a second arm portion extending from the connection portion, the first arm portion includes a first protrusion, and the second arm portion includes a second arm portion. You may have a protrusion part.

また、この発明に係る電極部材の接合方法は、電極部材をはんだによって接合対象部材に接合する電極部材の接合方法であって、間隙を挟んでそれぞれの端部が向き合う第一突出部及び第二突出部を有する電極部材を、第一突出部及び第二突出部を接合対象部材に対向させて配置するステップと、第一突出部及び第二突出部と接合対象部材との間に第一突出部及び第二突出部と接合対象部材とを接合するはんだを供給するために、上記間隙にはんだを滴下するステップとを含む。   The electrode member joining method according to the present invention is a method for joining an electrode member to a member to be joined by soldering, and includes a first projecting portion and a second projecting end portion facing each other across a gap. A step of disposing an electrode member having a projecting portion with the first projecting portion and the second projecting portion facing the member to be joined; and a first projecting portion between the first projecting portion, the second projecting portion, and the member to be joined. Dropping solder into the gap in order to supply solder for joining the part and the second projecting part and the member to be joined.

この発明によれば、電極部材の接合体及び電極部材の接合方法は、安定した品質の接合を可能にすることができる。   According to this invention, the joined body of the electrode member and the joining method of the electrode member can enable stable quality joining.

本発明の実施の形態1に係る電極部材の接合体の構成を示す模式平面図である。It is a schematic plan view which shows the structure of the assembly of the electrode member which concerns on Embodiment 1 of this invention. 図1のII−II線に沿った模式断面図である。It is a schematic cross section along the II-II line of FIG. 本発明の実施の形態2に係る電極部材の接合体の構成を示す模式平面図である。It is a schematic plan view which shows the structure of the assembly of the electrode member which concerns on Embodiment 2 of this invention. 本発明の実施の形態3に係る電極部材の接合体の構成を示す模式平面図である。It is a schematic plan view which shows the structure of the joined body of the electrode member which concerns on Embodiment 3 of this invention.

以下に、この発明の実施の形態について、添付図面に基づいて説明する。
実施の形態1.
図1〜2を用いて、この発明の実施の形態にかかる電極部材の接合体101の構成を説明する。なお、本実施の形態では、基板上にはんだ付けされている半導体素子の上に電極部材をはんだ付けする接合体について説明する。
Embodiments of the present invention will be described below with reference to the accompanying drawings.
Embodiment 1 FIG.
The configuration of the electrode member assembly 101 according to the embodiment of the present invention will be described with reference to FIGS. In the present embodiment, a joined body in which an electrode member is soldered on a semiconductor element soldered on a substrate will be described.

図1は、電極部材の接合体101の構成を表す模式平面図を示し、図2は、図1のII−II線に沿った模式断面図を示す。
接合体101は、基板4と、該基板4に第二はんだ層2を介してはんだ付けされる接合対象部材としての半導体素子3と、該半導体素子3の上方に半導体素子3と隙間t1を空けて配置されるリード10とから構成される。
リード10は、図1に示すように、矩形板状の接続部13と、互いに平行に延びる矩形板状をした第一アーム部11及び第二アーム部12とを有している。
第一アーム部11は、接続部13の長辺側側面の一方から該接続部13の長辺方向と略直交する方向(前方向A)に向かって延びる矩形板状の本体部11bと、該本体部11bの長辺側側面の一方から第二アーム部12に向かう方向(右方向D)に突出する矩形板状の第一突起部11aとからなり、本実施形態ではT字状に形成されている。第二アーム部12は、第一アーム部11の本体部11bと平行に延びる矩形板状の本体部12bと、本体部12bの長辺側側面の一方から第一アーム部11に向かう方向(左方向C)に突出する矩形板状の第二突起部12aとからなり、第一アーム部11同様、本実施形態ではT字状に形成されている。
ここで、第一突起部11a及び第二突起部12aはそれぞれ、第一突出部及び第二突出部を構成している。
FIG. 1 is a schematic plan view showing the configuration of the joined body 101 of electrode members, and FIG. 2 is a schematic cross-sectional view taken along the line II-II in FIG.
The bonded body 101 includes a substrate 4, a semiconductor element 3 as a bonding target member to be soldered to the substrate 4 via the second solder layer 2, and a gap t 1 between the semiconductor element 3 and the semiconductor element 3. And the lead 10 arranged in the same manner.
As shown in FIG. 1, the lead 10 includes a rectangular plate-like connection portion 13, and a first arm portion 11 and a second arm portion 12 each having a rectangular plate shape extending in parallel with each other.
The first arm portion 11 includes a rectangular plate-shaped main body portion 11b extending from one of the long side surfaces of the connecting portion 13 toward a direction (front direction A) substantially orthogonal to the long side direction of the connecting portion 13, It consists of a rectangular plate-like first protrusion 11a that protrudes in the direction (right direction D) from one of the long side surfaces of the main body 11b to the second arm 12, and is formed in a T shape in this embodiment. ing. The second arm portion 12 has a rectangular plate-like main body portion 12b extending in parallel with the main body portion 11b of the first arm portion 11, and a direction (left) from one of the long side surfaces of the main body portion 12b toward the first arm portion 11. In this embodiment, it is formed in a T-shape like the first arm portion 11.
Here, the 1st projection part 11a and the 2nd projection part 12a comprise the 1st protrusion part and the 2nd protrusion part, respectively.

第一突起部11a及び第二突起部12aは、それぞれの端部11ac及び12acを互いに対向させるようにして突出しており、端部11ac及び12acの間に、矩形溝状をした間隙g10を形成している。
上記のように構成されたリード10は、第一突起部11aの端部11acと、第二突起部12aの端部12acと、第一突起部11aの端部11ac及び第二突起部12aの端部12acの間の間隙g10とが、半導体素子3の上方に位置するように配置され、半導体素子3と第一はんだ層1を介して接合される。
The first projecting portion 11a and the second projecting portion 12a project so that the end portions 11ac and 12ac face each other, and a gap g10 having a rectangular groove shape is formed between the end portions 11ac and 12ac. ing.
The lead 10 configured as described above includes the end 11ac of the first protrusion 11a, the end 12ac of the second protrusion 12a, the ends 11ac of the first protrusion 11a, and the ends of the second protrusion 12a. The gap g10 between the portions 12ac is disposed so as to be located above the semiconductor element 3 and is bonded to the semiconductor element 3 via the first solder layer 1.

ここで、第一はんだ層1の形成方法について説明する。
第一はんだ層1は、図2に示すように、半導体素子3の上方に配置されたリード10の第一突起部11aの端部11ac及び第二突起部12aの端部12acの間の間隙g10から隙間t1へ、ペースト状等の固体でないはんだを供給することによって形成される。例えば、はんだの供給は、間隙g10の上方に配置されたシリンジ充填装置100がペースト状のはんだを間隙g10の中に滴下供給することによって行われる。
Here, a method for forming the first solder layer 1 will be described.
As shown in FIG. 2, the first solder layer 1 has a gap g10 between the end 11ac of the first protrusion 11a and the end 12ac of the second protrusion 12a of the lead 10 disposed above the semiconductor element 3. To the gap t1 by supplying non-solid solder such as paste. For example, the supply of solder is performed by dropping and supplying paste-like solder into the gap g10 by the syringe filling device 100 disposed above the gap g10.

間隙g10にはんだが滴下供給されると、供給されたはんだは、半導体素子3の上面3aに落下し、さらに、次々にはんだが滴下供給されることによって隙間t1の中で第一突起部11aの下面11ab及び第二突起部12aの下面12abに向かって上方に堆積すると共に半導体素子3の上面3a上で拡がるようにして横方向に流動する。そして、はんだは、半導体素子3の上面3a、並びにリード10の第一突起部11aの下面11ab及び第二突起部12aの下面12abを濡らしつつ第一アーム部11の本体部11b及び第二アーム部12の本体部12bに向かって拡がって隙間t1を充填する。はんだの供給完了後、はんだは、冷却固化して第一はんだ層1を形成し、第一はんだ層1は、第一突起部11aの下面11ab及び第二突起部12aの下面12ab、並びに半導体素子3の上面3aと接合する。それによって、第一突起部11a及び第二突起部12aが第一はんだ層1を介して半導体素子3と接合される。   When the solder is dropped and supplied to the gap g10, the supplied solder falls on the upper surface 3a of the semiconductor element 3, and further, the solder is dropped and supplied one after another, so that the first protrusion 11a is formed in the gap t1. It accumulates upward toward the lower surface 11ab and the lower surface 12ab of the second protrusion 12a and flows laterally so as to spread on the upper surface 3a of the semiconductor element 3. Then, the solder wets the upper surface 3a of the semiconductor element 3 and the lower surface 11ab of the first protrusion 11a and the lower surface 12ab of the second protrusion 12a of the lead 10 while the main body 11b and the second arm of the first arm 11 are wetted. 12 widens toward the main body 12b and fills the gap t1. After the supply of the solder is completed, the solder is cooled and solidified to form the first solder layer 1. The first solder layer 1 includes the lower surface 11ab of the first protrusion 11a, the lower surface 12ab of the second protrusion 12a, and the semiconductor element. 3 is joined to the upper surface 3a. Thereby, the first protrusion 11 a and the second protrusion 12 a are joined to the semiconductor element 3 via the first solder layer 1.

以上のようにして第一はんだ層1が形成され、電極部材の接合体101が形成される。
上述のように構成された接合体101は、以下のような作用を奏する。
はんだの滴下供給時、はんだが第一突起部11aの下面11ab及び第二突起部12aの下面12abの近傍まで堆積した状態において、間隙g10間のはんだは、第一突起部11aの端部11ac及び第二突起部12aの端部12acに沿って間隙g10の外側に流れることができる。このため、はんだは、間隙g10において滞留し偏って堆積することが低減しており、第一突起部11aの下面11ab及び第二突起部12aの下面12abとはんだとの間における空隙の発生が減少する。
The first solder layer 1 is formed as described above, and the joined body 101 of electrode members is formed.
The joined body 101 configured as described above has the following effects.
In the state where the solder is deposited to the vicinity of the lower surface 11ab of the first projecting portion 11a and the lower surface 12ab of the second projecting portion 12a, the solder between the gaps g10 becomes the end portion 11ac and the end portion 11ac of the first projecting portion 11a. It can flow outside the gap g10 along the end 12ac of the second protrusion 12a. For this reason, it is reduced that the solder stays in the gap g10 and accumulates unevenly, and the generation of voids between the lower surface 11ab of the first protrusion 11a and the lower surface 12ab of the second protrusion 12a and the solder is reduced. To do.

また、第一突起部11a及び第二突起部12aは間隙g10によって分離されているため、第一はんだ層1の形成後、第一突起部11aの端部11ac、側部11ad及び側部11ae(図1参照)から、第一はんだ層1と第一突起部11aの下面11abとの間に空隙が形成されていないか確認することができる。第二突起部12aについても同様に、端部12ac、側部12ad及び側部12ae(図1参照)から、第一はんだ層1と第二突起部12aの下面12abとの間に空隙が形成されていないか確認することができる。そして、空隙がある場合、はんだを注入することによってこの空隙を充填し、第一突起部11a及び第二突起部12aはそれぞれ、第一はんだ層1に対して端部11ac、側部11ad及び側部11ae、並びに、端部12ac、側部12ad及び側部12aeに至るまで空隙を有さずに接合され、所要の接合面積を確保することができる。   Moreover, since the 1st projection part 11a and the 2nd projection part 12a are isolate | separated by the gap | interval g10, after formation of the 1st solder layer 1, the edge part 11ac of the 1st projection part 11a, the side part 11ad, and the side part 11ae ( From FIG. 1), it can be confirmed whether a gap is formed between the first solder layer 1 and the lower surface 11ab of the first protrusion 11a. Similarly, a gap is formed between the first solder layer 1 and the lower surface 12ab of the second protrusion 12a from the end 12ac, the side 12ad, and the side 12ae (see FIG. 1) in the second protrusion 12a. You can check if it is not. And when there is a gap, the gap is filled by injecting solder, and the first protrusion 11a and the second protrusion 12a are respectively connected to the end 11ac, the side 11ad and the side with respect to the first solder layer 1. The part 11ae and the end part 12ac, the side part 12ad, and the side part 12ae are joined without having a gap, and a required joining area can be secured.

第一突起部11a及び第二突起部12aが間隙g10を挟んで向き合って配置されているため、第一はんだ層1の形成後に、第一突起部11a及び第二突起部12aの周囲から、第一突起部11a及び第二突起部12aと第一はんだ層1と間における空隙の有無の確認が容易になり、そして、空隙がある場合にこの空隙をはんだで充填することも容易になる。よって、第一突起部11a及び第二突起部12aと第一はんだ層1との間の接合面積の確保が可能になる。
従って、電極部材の接合体101は、安定した品質の接合を可能にする。
Since the first projecting portion 11a and the second projecting portion 12a are arranged to face each other with the gap g10 therebetween, after the first solder layer 1 is formed, the first projecting portion 11a and the second projecting portion 12a are arranged around the first projecting portion 11a and the second projecting portion 12a. It becomes easy to confirm the presence or absence of a gap between the first and second protrusions 11a and 12a and the first solder layer 1, and when there is a gap, it is easy to fill the gap with solder. Therefore, it is possible to secure a bonding area between the first and second protrusions 11a and 12a and the first solder layer 1.
Therefore, the joined body 101 of electrode members enables stable quality joining.

また、リード10は、接続部13と、接続部13から延びる第一アーム部11及び第二アーム部12とを有し、第一アーム部11は、第一突起部11aを有し、第二アーム部12は、第二突起部12aを有している。1つの接続部13から突出する2つの第一アーム部11及び第二アーム部12を1つの半導体素子3に接合することによって、第一アーム部11及び第二アーム部12がばね構造を構成し、半導体素子3への接合部分に作用する応力を低減することができる。よって、電極部材の接合体101の耐久性を向上させることが可能になる。   In addition, the lead 10 includes a connecting portion 13, a first arm portion 11 and a second arm portion 12 extending from the connecting portion 13, and the first arm portion 11 includes a first projecting portion 11 a and a second arm portion 11. The arm part 12 has the 2nd protrusion part 12a. By joining two first arm portions 11 and second arm portions 12 protruding from one connection portion 13 to one semiconductor element 3, the first arm portion 11 and the second arm portion 12 constitute a spring structure. The stress acting on the joint portion to the semiconductor element 3 can be reduced. Therefore, it becomes possible to improve the durability of the joined member 101 of the electrode member.

また、半導体素子3にリード10をはんだ付けする際、第一はんだ層1をリード10と半導体素子3との間の所望の位置に形成するためには、間隙g10の間にはんだを滴下するだけでよいので、はんだの供給位置の設定が容易になる。さらに、間隙g10の中心から第一突起部11aの端部11ac方向または第二突起部12aの端部12ac方向にずれた位置の上方からはんだが供給されたとしても、第一突起部11aの端部11acまたは第二突起部12aの端部12acに弾かれて間隙g10の中心付近直下の半導体素子3上に滴下されるため、はんだが間隙g10の中心からずれた位置の上方から滴下されても第一はんだ層1を適正な位置及び適正な範囲内に形成することが可能になる。   Further, when soldering the lead 10 to the semiconductor element 3, in order to form the first solder layer 1 at a desired position between the lead 10 and the semiconductor element 3, the solder is simply dropped between the gaps g <b> 10. Therefore, it is easy to set the solder supply position. Furthermore, even if solder is supplied from above the position shifted from the center of the gap g10 toward the end 11ac of the first protrusion 11a or the end 12ac of the second protrusion 12a, the end of the first protrusion 11a Since it is bounced by the portion 11ac or the end 12ac of the second protrusion 12a and dropped onto the semiconductor element 3 immediately below the center of the gap g10, even if the solder is dropped from above the position shifted from the center of the gap g10. The first solder layer 1 can be formed at an appropriate position and within an appropriate range.

実施の形態2.
この発明の実施の形態2に係る電極部材の接合体102は、実施の形態1のリード10の第一突起部11aの端部11ac及び第二突起部12aの端部12acを、窪んだ形状にしたものである。
なお、以下の実施の形態において、前出した図における参照符号と同一の符号は、同一または同様な構成要素であるので、その詳細な説明は省略する。
Embodiment 2. FIG.
In the electrode member assembly 102 according to the second embodiment of the present invention, the end portion 11ac of the first protrusion portion 11a and the end portion 12ac of the second protrusion portion 12a of the lead 10 of the first embodiment are recessed. It is a thing.
In the following embodiments, the same reference numerals as those in the previous drawings are the same or similar components, and thus detailed description thereof is omitted.

図3を参照すると、電極部材の接合体102のリード20において、接続部23から延びる第一アーム部21の第一突起部21aは、端部21acが第一アーム部21の本体部21bに向かって半円柱状に窪んでいる。同様に、接続部23から延びる第二アーム部22の第二突起部22aは、その端部22acが第二アーム部22の本体部22bに向かって半円柱状に窪んでいる。さらに、第一突起部21aの端部21ac及び第二突起部22aの端部22acは、互いに向き合い、これらの間にほぼ円柱形状を有する間隙g20を形成している。そして、間隙g20は、接続部23側の開放端g20b及び該開放端g20bと間隙g20の中心に対し反対側に位置する開放端g20aで開放している。   Referring to FIG. 3, in the lead 20 of the electrode member assembly 102, the first protrusion portion 21 a of the first arm portion 21 extending from the connection portion 23 has an end portion 21 ac facing the main body portion 21 b of the first arm portion 21. Is recessed in a semi-cylindrical shape. Similarly, the second projecting portion 22 a of the second arm portion 22 extending from the connecting portion 23 has an end 22 ac that is recessed in a semi-cylindrical shape toward the main body portion 22 b of the second arm portion 22. Furthermore, the end 21ac of the first protrusion 21a and the end 22ac of the second protrusion 22a face each other, and a gap g20 having a substantially columnar shape is formed therebetween. The gap g20 is opened at an open end g20b on the connection portion 23 side and an open end g20a located on the opposite side of the open end g20b and the center of the gap g20.

このとき、半導体素子3にリード20をはんだ付けする際、はんだが第一突起部11a及び第二突起部12aの下面近くまで堆積した状態において、間隙g20に滴下供給したはんだは、間隙g20の中心付近より幅が狭い開放端g20a及びg20bから間隙g20の外側へ流出することが抑えられるため、はんだが間隙g20の中心からずれた位置に滴下されても開放端g20aまたは開放端g20bから間隙g20の外側へ流出することなく、間隙g20全体に濡れ拡がる。
また、この発明の実施の形態2に係る電極部材の接合体102のその他の構成は、実施の形態1と同様であるため、説明を省略する。
At this time, when the lead 20 is soldered to the semiconductor element 3, the solder dropped and supplied to the gap g20 in the state where the solder is deposited to the vicinity of the lower surfaces of the first protrusion 11a and the second protrusion 12a is the center of the gap g20. Since it is possible to suppress the outflow from the open ends g20a and g20b having a narrower width than the vicinity to the outside of the gap g20, even if the solder is dropped at a position shifted from the center of the gap g20, the open end g20a or the open end g20b The entire gap g20 spreads out without flowing out.
The other configuration of the electrode member assembly 102 according to the second embodiment of the present invention is the same as that of the first embodiment, and a description thereof will be omitted.

このように、実施の形態2に係る電極部材の接合体102において、上記実施の形態1の電極部材の接合体101と同様な効果が得られる。
また、第一突起部21aは、窪んだ端部21acを有し、第二突起部22aは、窪んだ端部22acを有し、第一突起部21aの端部21ac及び第二突起部22aの端部22acは互いに向き合って間隙g20を形成している。これによって、間隙g20に供給されたはんだが、間隙g20の両端の開放端g20a及びg20bから外側へ流出することが抑えられ、第一はんだ層1は第一突起部21a及び第二突起部22aの外側への拡がりが抑えられた形状で形成されるため、はんだの使用量が低減され、コストを低減することが可能になる。
Thus, in the electrode member assembly 102 according to the second embodiment, the same effect as the electrode member assembly 101 of the first embodiment can be obtained.
The first protrusion 21a has a recessed end 21ac, the second protrusion 22a has a recessed end 22ac, and the first protrusion 21a has an end 21ac and a second protrusion 22a. The end portions 22ac face each other to form a gap g20. As a result, the solder supplied to the gap g20 is prevented from flowing out from the open ends g20a and g20b at both ends of the gap g20, and the first solder layer 1 is formed by the first protrusion 21a and the second protrusion 22a. Since it is formed in a shape in which the outward expansion is suppressed, the amount of solder used is reduced, and the cost can be reduced.

実施の形態3.
この発明の実施の形態3に係る電極部材の接合体103は、実施の形態1のリード10の第一突起部11aの端部11ac及び第二突起部12aの端部12acを、先端に近づくにしたがい細くなる形状にしたものである。
Embodiment 3 FIG.
In the electrode member assembly 103 according to the third embodiment of the present invention, the end portion 11ac of the first protrusion portion 11a and the end portion 12ac of the second protrusion portion 12a of the lead 10 of the first embodiment approach the tip. Accordingly, the shape becomes thinner.

図4を参照すると、電極部材の接合体103のリード30において、接続部33から延びる第一アーム部31の第一突起部31aは、端部31acが第二アーム部32に向かって幅が小さくなる。すなわち、端部31acは、平坦な平坦部31ac1と、平坦部31ac1の両側からテーパー状に拡がったテーパー部31ac2及び31ac3とによって形成されている。同様に、接続部33から延びる第二アーム部32の第二突起部32aは、端部32acが第一アーム部31に向かって幅が小さくなる。すなわち、端部32acは、平坦部32ac1と、平坦部31ac1の両側のテーパー部32ac2及び32ac3とによって形成されている。
さらに、第一突起部31aの平坦部31ac1及び第二突起部32aの平坦部32ac1は、互いに向き合い、これらの間に両端が開放した矩形溝状の間隙g30を形成している。
Referring to FIG. 4, in the lead 30 of the electrode member assembly 103, the first protrusion 31 a of the first arm portion 31 extending from the connection portion 33 has an end portion 31 ac that decreases in width toward the second arm portion 32. Become. That is, the end portion 31ac is formed by a flat flat portion 31ac1 and tapered portions 31ac2 and 31ac3 extending in a tapered shape from both sides of the flat portion 31ac1. Similarly, the width of the second protrusion 32 a of the second arm portion 32 extending from the connection portion 33 decreases toward the first arm portion 31 at the end portion 32 ac. That is, the end portion 32ac is formed by the flat portion 32ac1 and the tapered portions 32ac2 and 32ac3 on both sides of the flat portion 31ac1.
Further, the flat portion 31ac1 of the first protrusion 31a and the flat portion 32ac1 of the second protrusion 32a face each other, and form a rectangular groove-like gap g30 having both ends opened therebetween.

このとき、第一突起部31aの端部31ac及び第二突起部32aの端部32acはそれぞれ、テーパー部31ac2及び31ac3、並びに、テーパー部32ac2及び32ac3によって、間隙g30から離れる方向に向かって拡がるテーパー形状を有している。このため、半導体素子3にリード30をはんだ付けする際、上方から供給されたはんだは、第一突起部31a及び第二突起部32aの下側に流入しやすく、第一突起部31a及び第二突起部32aと半導体素子3との間を効率的に充填する。さらに、実施の形態1の第一はんだ層より、第一突起部31a及び第二突起部32aから接続部33へ向かう方向及びその反対方向への拡がりを抑えた形状で第一はんだ層1が形成される。
また、この発明の実施の形態3に係る電極部材の接合体103のその他の構成は、実施の形態1と同様であるため、説明を省略する。
At this time, the end portion 31ac of the first protrusion portion 31a and the end portion 32ac of the second protrusion portion 32a are respectively tapered by the taper portions 31ac2 and 31ac3 and the taper portions 32ac2 and 32ac3 in a direction away from the gap g30. It has a shape. For this reason, when soldering the lead 30 to the semiconductor element 3, the solder supplied from above tends to flow into the lower side of the first protrusion 31 a and the second protrusion 32 a, and the first protrusion 31 a and the second protrusion 32 a. The space between the protrusion 32a and the semiconductor element 3 is efficiently filled. Further, the first solder layer 1 is formed from the first solder layer of the first embodiment in a shape in which the first protrusion 31a and the second protrusion 32a toward the connecting portion 33 and the opposite direction are prevented from spreading. Is done.
The other configuration of the electrode member assembly 103 according to the third embodiment of the present invention is the same as that of the first embodiment, and a description thereof will be omitted.

このように、実施の形態3に係る電極部材の接合体103において、上記実施の形態1の電極部材の接合体101と同様な効果が得られる。
また、第一突起部31aは、先端に近づくにしたがい細くなる端部31acを有し、第二突起部32aは、先端に近づくにしたがい細くなる端部32acを有し、第一突起部31aの端部31ac及び第二突起部32aの端部32acは互いに向き合って間隙g30を形成している。このとき、第一突起部31aの端部31ac及び第二突起部32aの端部32acが間隙g30から離れる方向に向かって拡がる形状を有し、第一突起部31a及び第二突起部32aの下側に間隙g30に供給されたはんだが流入しやすくなっているため、第一突起部31a及び第二突起部32aと半導体素子3との間をはんだによって効率よく充填できる。よって、電極部材の接合体103は、安定した品質の接合を可能にする。
Thus, in the electrode member assembly 103 according to the third embodiment, the same effects as those of the electrode member assembly 101 according to the first embodiment can be obtained.
Further, the first protrusion 31a has an end 31ac that becomes thinner as it approaches the tip, and the second protrusion 32a has an end 32ac that becomes thinner as it approaches the tip. The end portion 31ac and the end portion 32ac of the second protrusion 32a face each other to form a gap g30. At this time, the end portion 31ac of the first projection portion 31a and the end portion 32ac of the second projection portion 32a have a shape that expands in a direction away from the gap g30, and are below the first projection portion 31a and the second projection portion 32a. Since the solder supplied to the gap g30 tends to flow into the side, the space between the first protrusion 31a and the second protrusion 32a and the semiconductor element 3 can be efficiently filled with solder. Therefore, the joined body 103 of the electrode member enables joining with stable quality.

なお、実施形態は前記に限定されるものではなく、例えば、次のように具体化してもよい。
実施の形態1〜3において、リード10,20,30を半導体素子3にはんだ付けした後に、接続部13,23,33を切り取って除去することによって、リード10,20,30を半導体素子3にはんだ付けされた2つの電極として使用することができる。
また、実施の形態1〜3では、リード10,20,30を半導体素子3にはんだ付けする場合について記載されているが、これに限定されるものでない。電極部材の接合体101〜103は、リード10,20,30を基板4に直接はんだ付けする場合、及びリード10,20,30を基板4上の電極等にはんだ付けする場合にも適用することができる。
In addition, embodiment is not limited to the above, For example, you may actualize as follows.
In the first to third embodiments, after the leads 10, 20, and 30 are soldered to the semiconductor element 3, the connecting portions 13, 23, and 33 are cut off and removed, whereby the leads 10, 20, and 30 are attached to the semiconductor element 3. It can be used as two soldered electrodes.
In the first to third embodiments, the case where the leads 10, 20, and 30 are soldered to the semiconductor element 3 is described, but the present invention is not limited to this. The electrode member assemblies 101 to 103 are also applicable when the leads 10, 20, 30 are directly soldered to the substrate 4 and when the leads 10, 20, 30 are soldered to the electrodes on the substrate 4. Can do.

また、実施の形態1〜3では、リード10,20,30の第一突起部11a,21a,31a及び第二突起部12a,22a,32aはそれぞれ、第一アーム部11,21,31の本体部11b,21b,31b及び第二アーム部12,22,32の本体部12b,22b,32bに形成されていたが、これに限定されるものでなく、2つの突起部の端部が隙間をあけて向き合うものであればよい。つまり、第一アーム部11,21,31及び第二アーム部12,22,32がそれぞれ、本体部11b,21b,31b及び本体部12b,22b,32bを有さず、接続部13,23,33から第一突起部11a,21a,31a及び第二突起部12a,22a,32aが突出するものであってもよい。この場合、第一突起部11a,21a,31a及び第二突起部12a,22a,32aは、直線状であってもよく、また、屈折或いは湾曲していてもよい。   In the first to third embodiments, the first protrusions 11a, 21a, 31a and the second protrusions 12a, 22a, 32a of the leads 10, 20, 30 are respectively the main bodies of the first arm parts 11, 21, 31. Although it was formed in the main body portions 12b, 22b, 32b of the portions 11b, 21b, 31b and the second arm portions 12, 22, 32, it is not limited to this, and the end portions of the two protruding portions have gaps. Anything that opens and faces each other is acceptable. That is, the first arm parts 11, 21, 31 and the second arm parts 12, 22, 32 do not have the main body parts 11 b, 21 b, 31 b and the main body parts 12 b, 22 b, 32 b, respectively. The first protrusions 11a, 21a, 31a and the second protrusions 12a, 22a, 32a may protrude from 33. In this case, the first protrusions 11a, 21a, 31a and the second protrusions 12a, 22a, 32a may be linear, and may be refracted or curved.

さらに、実施の形態1〜3では、第一突起部11a,21a,31a及び第二突起部12a,22a,32aは、それぞれの端部11ac,21ac,31ac及び端部12ac,22ac,32acを互いに対向させるようにして突出し、第一突起部11a,21a,31a及び第二突起部12a,22a,32aが直線状に並ぶようにして配置されていたが、これに限定されるものではない。例えば、実施の形態1の第一突起部11a及び第二突起部12aがそれぞれ、第一アーム部11の本体部11b及び第二アーム部12の本体部12bに対して、垂直な方向から接続部13の方向またはその反対方向に傾斜した方向に延びていてもよい。つまり、第一突起部11a及び第二突起部12aがへの字形状を形成するように配置されてもよい。このとき、への字形状の曲がり部に位置する、第一突起部11aの端部11ac及び第二突起部12aの端部12acの間の隙間は、接続部13に向かうに従い幅が広くなる形状を有していても接続部13と反対方向に向かうに従い幅が広くなる形状を有していてもよく、または、幅が一定な形状を有していてもよい。そして、この隙間にはんだを供給することによって、第一突起部11a及び第二突起部12aを半導体素子3にはんだ付けすることができる。なお、上述の第一突起部11a及び第二突起部12aにおけるへの字形状をした配置は、実施の形態2及び3において適用してもよく、また、上述の形態、すなわち第一アーム部11,21,31及び第二アーム部12,22,32がそれぞれ本体部11b,21b,31b及び本体部12b,22b,32bを有さず、接続部13,23,33から第一突起部11a,21a,31a及び第二突起部12a,22a,32aが突出する形態に適用してもよい。
また、突起部は2つでなくてもよく、3つ以上であってもよい。例えば、3つの突起の端部を互いの間に隙間をあけて向き合わせ、この隙間にはんだを供給してもよい。
Further, in the first to third embodiments, the first projecting portions 11a, 21a, 31a and the second projecting portions 12a, 22a, 32a are connected to the end portions 11ac, 21ac, 31ac and the end portions 12ac, 22ac, 32ac, respectively. The first protrusions 11a, 21a, 31a and the second protrusions 12a, 22a, 32a are arranged so as to be arranged in a straight line, but are not limited thereto. For example, the first projecting portion 11a and the second projecting portion 12a of the first embodiment are connected to the main body portion 11b of the first arm portion 11 and the main body portion 12b of the second arm portion 12 from the vertical direction, respectively. It may extend in the direction inclined in the direction of 13 or the opposite direction. That is, the 1st projection part 11a and the 2nd projection part 12a may be arrange | positioned so that a square shape may be formed. At this time, the gap between the end portion 11ac of the first projection portion 11a and the end portion 12ac of the second projection portion 12a, which is located at the bent portion of the U-shape, becomes wider in the direction toward the connection portion 13. Even if it has, it may have the shape where a width | variety becomes wide as it goes to the opposite direction to the connection part 13, or may have a shape with a fixed width | variety. Then, by supplying solder to the gap, the first protrusion 11 a and the second protrusion 12 a can be soldered to the semiconductor element 3. In addition, the arrangement | positioning which carried out the U shape in the above-mentioned 1st projection part 11a and the 2nd projection part 12a may be applied in Embodiment 2 and 3, and the above-mentioned form, ie, the 1st arm part 11, is applied. , 21, 31 and the second arm parts 12, 22, 32 do not have the main body parts 11b, 21b, 31b and the main body parts 12b, 22b, 32b, respectively, and the first projecting part 11a, You may apply to the form which 21a, 31a and 2nd projection part 12a, 22a, 32a protrude.
Also, the number of protrusions may not be two, but may be three or more. For example, the ends of the three protrusions may face each other with a gap between them, and solder may be supplied to the gap.

1 第一はんだ層、3 半導体素子(接合対象部材)、10,20,30 リード(電極部材)、11,21,31 第一アーム部(電極部材の第一アーム部)、11a,21a,31a 第一突起部(第一突出部)、11ac 端部(第一突出部の端部)、12,22,32 第二アーム部(電極部材の第二アーム部)、12a,22a,32a 第二突起部(第二突出部)、12ac 端部(第二突出部の端部)、13,23,33 接続部(電極部材の接続部)、21ac 端部(第一突出部の窪んだ端部)、22ac 端部(第二突出部の窪んだ端部)、31ac 端部(第一突出部の先端に近づくにしたがい細くなる端部)、32ac 端部(第二突出部の先端に近づくにしたがい細くなる端部)、101,102,103 電極部材の接合体、g10,g20,g30 間隙。   DESCRIPTION OF SYMBOLS 1 1st solder layer, 3 semiconductor element (member to be joined) 10, 20, 30 lead (electrode member), 11, 21, 31 first arm part (first arm part of electrode member), 11a, 21a, 31a 1st protrusion part (1st protrusion part), 11ac end part (end part of 1st protrusion part), 12, 22, 32 2nd arm part (2nd arm part of an electrode member), 12a, 22a, 32a 2nd Projection part (second projection part), 12ac end part (end part of second projection part), 13, 23, 33 connection part (connection part of electrode member), 21ac end part (end part where the first projection part is depressed) ), 22ac end (end where the second protrusion is depressed), 31ac end (end which becomes narrower as it approaches the tip of the first protrusion), 32ac end (closer to the end of the second protrusion) Therefore, 101, 102, 103 Joining of electrode members , G10, g20, g30 gap.

Claims (5)

電極部材がはんだによって接合対象部材に接合される電極部材の接合体であって、
前記電極部材は間隙を挟んでそれぞれの端部が向き合う第一突出部及び第二突出部を有し、前記第一突出部及び前記第二突出部を前記接合対象部材に対向させて配置させ、
前記間隙から供給されるはんだによって前記第一突出部及び前記第二突出部と前記接合対象部材とが接合される電極部材の接合体。
The electrode member is a joined body of electrode members to be joined to a member to be joined by solder,
The electrode member has a first projecting portion and a second projecting portion facing each other across a gap, and the first projecting portion and the second projecting portion are arranged to face the joining target member,
A joined body of electrode members in which the first projecting portion, the second projecting portion, and the member to be joined are joined by solder supplied from the gap.
前記第一突出部の端部及び前記第二突出部の端部は、窪んでいる請求項1に記載の電極部材の接合体。   The joined body of electrode members according to claim 1, wherein an end portion of the first projecting portion and an end portion of the second projecting portion are recessed. 前記第一突出部及び前記第二突出部は、先端に近づくにしたがい細くなる請求項1に記載の電極部材の接合体。   The joined body of electrode members according to claim 1, wherein the first projecting portion and the second projecting portion become thinner as approaching the tip. 前記電極部材は、接続部と、前記接続部から延びる第一アーム部及び第二アーム部とを有し、
前記第一アーム部は、前記第一突出部を有し、前記第二アーム部は、前記第二突出部を有する請求項1〜3のいずれか一項に記載の電極部材の接合体。
The electrode member has a connection portion, a first arm portion and a second arm portion extending from the connection portion,
The said 1st arm part has said 1st protrusion part, and said 2nd arm part is a joined body of the electrode member as described in any one of Claims 1-3 which has said 2nd protrusion part.
電極部材をはんだによって接合対象部材に接合する電極部材の接合方法であって、
間隙を挟んでそれぞれの端部が向き合う第一突出部及び第二突出部を有する電極部材を、前記第一突出部及び前記第二突出部を接合対象部材に対向させて配置するステップと、
前記第一突出部及び前記第二突出部と前記接合対象部材との間に前記第一突出部及び前記第二突出部と前記接合対象部材とを接合するはんだを供給するために、前記間隙に前記はんだを滴下するステップと
を含む電極部材の接合方法。
An electrode member joining method for joining an electrode member to a joining target member by solder,
Arranging an electrode member having a first protrusion and a second protrusion facing each other across a gap, with the first protrusion and the second protrusion facing the member to be joined;
In order to supply solder for joining the first projecting part, the second projecting part, and the joining target member between the first projecting part, the second projecting part, and the joining target member, A step of dripping the solder.
JP2010168184A 2010-07-27 2010-07-27 Bonding body of electrode member and bonding method of electrode member Pending JP2012028681A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019009328A (en) * 2017-06-27 2019-01-17 三菱電機株式会社 Power semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019009328A (en) * 2017-06-27 2019-01-17 三菱電機株式会社 Power semiconductor device

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