JP2012015544A - Method of manufacturing connecting structure, and connecting structure and connecting method - Google Patents

Abstract

The present invention provides a connection method, a connection structure, and a method for manufacturing the connection structure that suppress occurrence of a short circuit and realize a good conduction state.
A guide plate is provided on a connection surface of a glass substrate. The guide plate includes guide surface portions that control the moving direction of conductive particles. The guide plate 13 is erected in one of the areas facing each other through the area between the adjacent wiring electrodes 12. In the guide surface portions 131 and 132, the side surface direction orthogonal to the standing direction of the guide plate 13 faces the wiring electrode 12. The glass substrate 1 and the IC chip are crimped and connected via an anisotropic conductive film by heat and pressure, and the wiring electrodes 12 and the bumps are anisotropically conductively connected.
[Selection] Figure 1

Description

  The present invention relates to a method of manufacturing a connection structure in which an electronic component and a substrate are anisotropically conductively connected, a connection structure manufactured by the manufacturing method, and a connection method.

  Conventionally, when an electronic component is connected to a substrate, an anisotropic conductive adhesive in which conductive particles are dispersed in an insulating adhesive (resin) composition has been used. When an anisotropic conductive adhesive is placed between the electronic component and the substrate and heat-pressed, the conductive particles in the anisotropic conductive adhesive are placed between the terminal electrode of the electronic component and the wiring electrode of the substrate. It is pinched and crushed. As a result, the terminal electrode of the electronic component and the wiring electrode of the substrate are electrically connected via the conductive particles. Conductive particles that are not between the terminal electrode and the wiring electrode are dispersed in the insulating adhesive composition, and maintain an electrically insulated state. That is, electrical continuity is achieved only between the terminal electrode and the wiring electrode.

  In a connection structure in which an electronic component and a substrate are connected, in order to stabilize the insulation resistance value and the conduction resistance value, as an anisotropic conductive adhesive, for example, an anisotropy of a two-layer structure having different glass transition temperatures There is a method using a conductive film (adhesive film) (see Patent Document 1). The anisotropic conductive film having a two-layer structure described in Patent Document 1 includes a conductive particle-containing layer (first adhesive layer) in which conductive particles are dispersed in an insulating adhesive composition, and a conductive layer. Insulating adhesive layer (second adhesive layer) composed only of the insulating adhesive composition without containing conductive particles is laminated, and the glass transition temperature of the first adhesive layer is the second It is described that it is higher than the glass transition temperature of the adhesive layer.

  When the anisotropic conductive film having a two-layer structure described in Patent Document 1 is interposed between the substrate and the electronic component and heat-pressed, the second adhesive layer melts and the wiring electrode of the substrate and the electronic component Excluded from between terminals. On the other hand, the first adhesive layer having a glass transition temperature higher than that of the second adhesive layer still remains between the wiring electrode and the terminal electrode. That is, the conductive particles dispersed in the first adhesive layer are firmly sandwiched and fixed between the wiring electrode and the terminal electrode. Thereby, the particle | grain capture | acquisition rate between a wiring electrode and a terminal electrode can be raised. Also, since conductive particles do not flow between adjacent wiring electrodes or between adjacent terminal electrodes, a short circuit due to conductive particles occurs between adjacent wiring electrodes or between adjacent terminal electrodes. I will not let you. Therefore, in the connection structure, insulation reliability and conduction reliability can be improved.

JP 2009-29914 A

  By the way, in recent years, with the miniaturization and high performance of electric devices, the fine pitches of terminal electrodes of electronic components and wiring electrodes of substrates have been promoted. The connection surface of the substrate in which the wiring electrodes are formed at a fine pitch and the connection surface of an electronic component in which the terminal electrodes are formed at a fine pitch are connected through such an anisotropic conductive film having a two-layer structure. In this case, in order to obtain a good conduction resistance value, it is necessary to increase the conductive particles in the conductive particle-containing layer.

  However, in such fine pitch connection, when an anisotropic conductive film containing a large number of conductive particles is used, the conductive particles are connected between adjacent wiring electrodes and adjacent terminal electrodes of the obtained connection structure. May aggregate and cause a short circuit. For example, the conductive particles sandwiched between the terminal electrodes of the electronic component and the wiring electrodes of the substrate and crushed and spread in the lateral direction cause lateral stress to the conductive particles present in the region between the adjacent terminal electrodes. As a result, the conductive particles aggregate and cause a short circuit.

  The present invention has been proposed in view of such a conventional situation. That is, the present invention suppresses the occurrence of short circuits between wiring electrodes and terminal electrodes formed at a fine pitch on the substrate, thereby obtaining good insulation reliability and good conduction reliability. It is an object of the present invention to provide a manufacturing method of a possible connection structure, a connection structure manufactured by this manufacturing method, and a connection method.

  In order to solve the above-described problems, a method for manufacturing a connection structure according to the present invention includes a plurality of wirings on a substrate through an anisotropic conductive adhesive in which conductive particles are dispersed in an insulating adhesive composition. In a method for manufacturing a connection structure in which a connection surface in which electrodes are arranged in parallel and a connection surface in which a plurality of terminal electrodes of the electronic component are arranged in parallel are connected, at least of the connection surface of the substrate and the connection surface of the electronic component On one side, a guide plate having a guide surface portion for guiding the movement of the conductive particles is erected, and the guide plate is at least one of the regions facing each other through the region between the wiring electrodes and / or between the terminal electrodes. The guide surface portion is anisotropically bonded by thermal pressurization, with the guide surface portion facing the wiring electrode or the terminal electrode in the side surface direction perpendicular to the standing direction of the guide plate. The connecting surface of the board and the electricity through the agent And parts of the connection surface by crimp connections, the wiring electrodes and the terminal electrodes to be connected anisotropic conductive.

  In order to solve the above-described problem, the connection structure of the present invention includes a plurality of wiring electrodes on a substrate via an anisotropic conductive adhesive in which conductive particles are dispersed in an insulating adhesive composition. In the connection structure in which the connection surface in which the plurality of terminal electrodes of the electronic component are connected in parallel is connected to at least one of the connection surface of the substrate and the connection surface of the electronic component, A guide plate having a guide surface portion for guiding the movement of the conductive particles is erected, and the guide plate passes through at least one of the regions facing each other via the region between the wiring electrodes and / or the region between the terminal electrodes. The guide surface portion faces the wiring electrode or the terminal electrode in the direction perpendicular to the direction in which the guide plate stands, and is heated and pressed through an anisotropic conductive adhesive. Board connection surface and electronic component connection surface There are crimped connection, the wiring electrodes and the terminal electrodes are formed by anisotropic conductive connection.

  In addition, in order to solve the above-described problem, the connection method of the present invention includes a plurality of wiring electrodes on a substrate through an anisotropic conductive adhesive in which conductive particles are dispersed in an insulating adhesive composition. In the connection method for connecting the parallel connection surface and the connection surface where the plurality of terminal electrodes of the electronic component are parallel, at least one of the connection surface of the substrate and the connection surface of the electronic component is made of conductive particles. A guide plate having a guide surface portion for guiding the movement is erected, and the guide plate is at least one of regions facing each other through the region between the wiring electrodes and / or a region facing each other through the region between the terminal electrodes. The guide surface portion is connected to the surface of the substrate via the anisotropic conductive adhesive by thermal pressurization, with the side surface direction perpendicular to the direction in which the guide plate stands facing the wiring electrode or the terminal electrode. And the electronic component connection surface And, the wiring electrodes and the terminal electrodes to be connected anisotropic conductive.

  According to the present invention, the conductive particles move in the direction of the wiring electrode along the guide surface of the induction plate in the flowing anisotropic conductive adhesive at the time of hot pressing. As a result, the number of conductive particles that enter between adjacent wiring electrodes of the substrate and between adjacent terminal electrodes of the electronic component can be reduced. As a result, the conductive particles are prevented from aggregating between the adjacent wiring electrodes and between the adjacent terminal electrodes, and the occurrence of a short circuit is suppressed, so that good insulation reliability can be obtained in the connection structure. . And since conductive particles can be efficiently collected on the wiring electrode through the induction plate, the particle capture rate between the wiring electrode and the terminal electrode can be improved, and as a result, good conduction reliability can be obtained. Can do.

It is a top view showing the connection surface of a glass substrate. It is a top view showing the connection surface of an IC chip. It is a schematic cross section of the transversal direction (width direction) of the anisotropic conductive film of 2 layer structure. It is a figure which shows the example of the shape of a guide plate. It is a figure which shows the example of the shape of a guide plate. It is a schematic cross section of the structure after arrangement | positioning of an anisotropic conductive film. It is a schematic cross section of the structure after temporary attachment of an anisotropic conductive film. It is a schematic cross section of the structure after arrangement | positioning of an IC chip. It is a schematic cross section of the structure after the connection process.

  Hereinafter, a specific embodiment of the present invention (hereinafter referred to as “the present embodiment”) will be described in detail with reference to the drawings.

  In this embodiment, a glass substrate and an IC chip are pressure-bonded and connected to each other through an anisotropic conductive film containing conductive particles in an insulating adhesive composition. The present invention is applied to a method for manufacturing a connection structure in which bumps that are terminal electrodes are anisotropically conductively connected, and the connection structure and connection method.

  On at least one of the connection surface where the plurality of wiring electrodes of the glass substrate are arranged in parallel and the connection surface where the plurality of bumps of the IC chip are arranged in parallel, an induction plate having a guide surface portion for guiding the movement of the conductive particles is provided. It is erected. When the adhesive composition flows due to heat and pressure, the conductive particles efficiently move toward the wiring electrode along the guide surface portion of the guide plate. Thereby, the number of conductive particles that enter between the adjacent wiring electrodes of the glass substrate and between the adjacent bumps of the IC chip can be reduced. As a result, the conductive particles are prevented from aggregating between the adjacent wiring electrodes and between the adjacent terminal electrodes, and the occurrence of a short circuit is suppressed, so that good insulation reliability can be obtained in the connection structure. . In addition, since the conductive particles can be efficiently collected on the wiring electrode through the induction plate, the particle capture rate between the wiring electrode and the terminal electrode can be improved, and as a result, good conduction reliability is obtained. be able to.

  In the following description, a case where induction plates are formed on both the connection surface of the glass substrate and the connection surface of the IC chip will be described.

  FIG. 1 is a plan view showing a connection surface 11 of a glass substrate 1 used in the method for manufacturing a connection structure according to the present embodiment. The glass substrate 1 is a glass substrate such as an alkali glass substrate, a glass LCD substrate (LCD panel), a glass PDP substrate (PDP panel), or a glass organic EL substrate (organic EL panel).

  A plurality of wiring electrodes 12 are formed on the connection surface 11 of the glass substrate 1 at a fine pitch. In addition, a guide plate 13 is erected in one of the areas facing each other through the area 14 between the adjacent wiring electrodes 12. As shown in FIG. 1, in a plan view of the glass substrate 1, the guide plate 13 on the connection surface 11 includes guide surface portions 131 and 132 that guide the movement of the conductive particles. A letter shape is formed. In the guide surface portions 131 and 132, the side surface direction orthogonal to the standing direction of the guide plate 13 faces the wiring electrode 12. In addition, you may make it the induction | guidance | derivation board 13 stand in both the area | regions which oppose through the area | region 14 between the wiring electrodes 12. FIG.

  FIG. 2 is a plan view showing the connection surface 21 of the IC chip 2 used in the manufacturing method of the connection structure according to the present embodiment. Bumps 22 are formed on the connection surface 21 of the IC chip 2 according to the wiring pattern of the wiring electrodes 12 of the glass substrate 1. A guide plate 23 is erected in one of the areas facing each other through the area 24 between the adjacent bumps 22. As shown in FIG. 2, in the plan view of the IC chip 2, the guide plate 23 on the connection surface 21 includes guide surface portions 231 and 232 that guide the movement of the conductive particles. It forms a letter shape. In the guide surface portions 231 and 232, the side surface direction orthogonal to the standing direction of the guide plate 13 faces the bump 22. The guide plate 23 is erected on the connection surface 21 of the IC chip 2 so as to be positioned directly above the guide plate 13 when the glass substrate 1 and the IC chip 2 are connected. The guide plate 23 may be erected in both areas facing each other via the area 24 between the adjacent bumps 22.

  FIG. 3 is a schematic cross-sectional view in the short-side direction (width direction) of the anisotropic conductive film 30 used in the method for manufacturing the connection structure according to the present embodiment. The anisotropic conductive film 30 is composed of a conductive particle-containing layer 31 in which conductive particles 31b are dispersed in an insulating adhesive composition 31a, and an insulating adhesive layer 32 made of only an insulating adhesive composition 32a. Is a film having a two-layer structure. In addition, as an anisotropic conductive film, it is not limited to this, For example, the 1 layer structure which consists only of an electroconductive particle content layer may be sufficient, and an electroconductive particle content layer and an insulating adhesive layer are laminated | stacked alternately It may be a three or more layer structure.

  In the present embodiment, the connection surface 11 of the glass substrate 1 and the connection surface 21 of the IC chip 2 are pressure-bonded and connected via the anisotropic conductive film 30 by heat and pressure. Thereby, the wiring electrode 12 and the bump 22 are connected, and the guide plate 13 and the guide plate 23 overlap. By the induction plates 13 and 23, the number of conductive particles 31b entering between the adjacent wiring electrodes 12 and between the adjacent bumps 22 is reduced, and the number of conductive particles 31b collected on the wiring electrodes 12 is increased.

  The material which comprises the induction | guidance | derivation plates 13 and 23 is not specifically limited, For example, organic resin, glass, an insulating ceramic etc. can be mentioned. Examples of the organic resin include acrylic polymer, amorphous fluoropolymer, epoxy resin, polyimide, and the like.

  In addition, the shape of a guide plate is not limited to the above-mentioned V shape. The guide plate may have any shape as long as it has a guide surface portion in which the side surface direction orthogonal to the standing direction of the guide plate faces the wiring electrode 12 (bump 22). For example, as shown in FIG. 4, a U-shaped guide plate 13 ′ having a shielding part 133 for shielding particles and guide surface parts 134 and 135, and a guide surface part 136 as shown in FIG. For example, a U-shaped guide plate 13 ″ may be used.

  By making the shape of the guide plates 13 and 23 V-shaped as described above, when the adhesive composition of the anisotropic conductive film flows by heat and pressure, the conductive particles 31b are formed on the wiring electrode 12 side and the bump 22. Smoothly flows to the side. For this reason, it is most preferable that the shape of the guide plates 13 and 23 is the above-mentioned V shape.

  As a method for erecting the guide plates 13 and 23, for example, the following method can be cited. For simplification, the case where the guide plate 13 is erected will be described, but the guide plate 23 is also erected with respect to the connection surface 21 of the IC chip 2 in the same manner as the method of erecting the guide plate 13. can do. A constituent material of the guide plate 13 is processed to produce a V-shaped structure including the guide surface portions 131 and 132. And the produced V-shaped structure is arrange | positioned in the connection surface 11 of the glass substrate 1 in at least one of the area | regions which opposes via the area | region between the some wiring electrodes 12 parallel, and in the arrangement | positioning position, V The bottom surface of the character-shaped structure is connected and fixed to the connection surface 11 with an adhesive or the like. Thereby, the guide plate 13 is erected on the connection surface 11 of the glass substrate 1.

The shortest distance L ₁ (FIG. 1) from the side surface direction tip portion 131a of the guide surface portion 131 and the side surface direction tip portion 132a of the guide surface portion 132 to the wiring electrode 12 perpendicular to the standing direction of the guide plate 13, The shortest distance L ₂ (FIG. 2) from the side surface direction front end portion 231a of the guide surface portion 231 orthogonal to the installation direction and the side surface direction front end portion 232a of the guide surface portion 232 to the bump 22 is 1 of the average particle diameter of the conductive particles 31b. It is preferably 0.0 to 3.0 times.

  The average particle size of the conductive particles 31b was measured with a Coulter counter (manufactured by Sysmex Corporation, particle size distribution measuring device), and this value was defined as the average particle size.

  If it is less than 1.0 times, the guide plate 23 has a guide plate portion 131 between the side surface tip 131a and the wiring electrode 12, the guide surface portion 132 has a side tip 132a and the wiring electrode 12, and the guide plate 23. The conductive particles 31b are dammed up and aggregated in the gap between the side surface front end portion 231a of the guide surface portion 231 and the bump 22 and between the side surface front end portion 232a of the guide surface portion 232 and the bump 22. The particles 31b may not flow smoothly to the wiring electrode 12 side and the bump 22 side. On the other hand, if it is larger than 3.0 times, the conductive particles 31b entering between the adjacent wiring electrodes 12 and between the adjacent bumps 22 increase, and the entering conductive particles 31b agglomerate with each other, so that a short circuit occurs. There is a fear.

  In particular, by setting the ratio to 1.0, the conductive particles 31b are not blocked in these gaps, and only a few conductive particles 31b pass through these gaps. Thereby, it is possible to suppress occurrence of a short circuit due to aggregation of the conductive particles 31b and to obtain good insulation reliability. A large number of conductive particles 31b are collected on the wiring electrode, whereby a high particle capture rate can be obtained between the wiring electrode 12 and the bump 22. As a result, many conductive particles 31b are crushed, and good conduction reliability can be obtained.

Note that the shortest distance L ₃ from the side surface direction front end portion 133a of the guide surface portion 134 and the side surface direction front end portion 135a of the guide surface portion 135 perpendicular to the standing direction of the guide plate 13 ′ shown in FIG. lateral tip 136a of the guide plate 13 guide surface 136 perpendicular to the standing direction of '' shown in, for the shortest distance L ₄ of the 136b from each to the wiring electrodes 12, Similarly, the average of the conductive particles 31b It is preferably 1.0 to 3.0 times the particle size.

  The height of the induction plate 13 in the glass substrate 1 is preferably substantially the same as the thickness of the conductive particle-containing layer 31 in the two-layer anisotropic conductive film 30. Thereby, many electroconductive particle 31b moves along the side surface direction of the guide surface parts 131 and 132 orthogonal to the standing direction of the induction | guidance | derivation board 13, and can collect the electroconductive particle 31b on the wiring electrode 12 efficiently. it can. In addition, when using the anisotropic conductive film of 1 layer structure which consists only of an electroconductive particle content layer, the height of the induction | guidance | derivation board 13 is substantially the same as the thickness of the anisotropic conductive film of 1 layer structure, or 1 layer structure. It is preferable that the thickness is slightly smaller than the thickness of the anisotropic conductive film. Further, the height of the guide plate 23 in the IC chip 21 is preferably substantially the same as the height of the bump 22 or slightly lower than the height of the bump 22. If the height of the guide plate 13 is too high, there may be a problem in the connection between the wiring electrode 12 and the bump 22. On the other hand, if the height of the guide plate 13 is too low, the conductive particles 31b cannot be efficiently collected on the wiring electrode 12, and the particle capture rate between the wiring electrode 12 and the bump 22 cannot be increased. .

  By setting the height of the guide plates 13 and 23 with respect to the height of the anisotropic conductive film or the bump 22 in this way, the conductive particles 31b can be sufficiently collected on the wiring board 12, and the high particles A capture rate can be obtained. At the same time, the wiring electrode 12 and the bump 22 can be connected in a good state. A large number of conductive particles 31b are firmly held between the bumps 22 and the wiring electrodes 12 and are sufficiently crushed, and good conduction reliability can be maintained.

  Here, the material of the anisotropic conductive film 30 will be described. In the anisotropic conductive film 30, the insulating adhesive composition 31a of the conductive particle-containing layer 31 is a normal one containing, for example, a film-forming resin, a thermosetting resin, a latent curing agent, a silane coupling agent, or the like. Consists of a binder component.

  As the film-forming resin, a resin having an average molecular weight of about 10,000 to 80,000 is preferable, and various resins such as an epoxy resin, a modified epoxy resin, a urethane resin, and a phenoxy resin are particularly mentioned. Among these, phenoxy resin is preferable from the viewpoint of film formation state, connection reliability, and the like.

  The thermosetting resin is not particularly limited as long as it has fluidity at room temperature, and examples thereof include commercially available epoxy resins. Examples of such epoxy resins include naphthalene type epoxy resins, biphenyl type epoxy resins, phenol novolac type epoxy resins, bisphenol type epoxy resins, stilbene type epoxy resins, triphenolmethane type epoxy resins, phenol aralkyl type epoxy resins, and naphthols. Type epoxy resin, dicyclopentadiene type epoxy resin, triphenylmethane type epoxy resin and the like. These may be used alone or in combination of two or more.

  Examples of the latent curing agent include various curing agents such as a heat curing type and a UV curing type. The latent curing agent does not normally react, but is activated by various triggers selected according to applications such as heat, light, and pressure, and starts the reaction. The activation method of the thermally activated latent curing agent includes a method of generating active species (cations and anions) by a dissociation reaction by heating, and the like. There are a method of starting a curing reaction by dissolving and dissolving, a method of starting a curing reaction by eluting a molecular sieve encapsulated type curing agent at a high temperature, and a method of elution / curing using a microcapsule. Thermally active latent curing agents include imidazole, hydrazide, boron trifluoride-amine complexes, sulfonium salts, amine imides, polyamine salts, dicyandiamide, etc., and modified products thereof. The above mixture may be sufficient. Among these, a microcapsule type imidazole-based latent curing agent is preferable.

  Examples of the silane coupling agent include epoxy-based, amino-based, mercapto-sulfide-based, and ureido-based agents. By adding the silane coupling agent, the adhesion at the interface between the organic material and the inorganic material is improved.

  Examples of the conductive particles 31b include particles of various metals and metal alloys such as nickel, iron, copper, aluminum, tin, lead, chromium, cobalt, silver, and gold, metal oxides, carbon, graphite, glass and ceramics, The surface of particles of plastic or the like coated with metal, or the surface of these particles further coated with an insulating thin film can be used. When using a resin particle surface coated with metal, the resin particles include, for example, epoxy resin, phenol resin, acrylic resin, acrylonitrile / styrene (AS) resin, benzoguanamine resin, divinylbenzene resin, styrene resin, etc. Particles can be mentioned. In addition, as for the electroconductive particle 31b, the whole particle | grain may be formed only with the electroconductive material.

  The insulating adhesive composition 32a constituting the insulating adhesive layer 32 is composed of a normal binder component containing a film-forming resin, a thermosetting resin, a latent curing agent, a silane coupling agent, etc. The particle-containing layer 31 can be made of the same material as the insulating adhesive composition 31a.

  The adhesive compositions 31a and 32a can be configured so that the minimum melt viscosity of the adhesive composition 32a is lower than the minimum melt viscosity of the adhesive composition 31a. Thereby, at the time of heat pressurization, the conductive particles 31b quickly move from the adhesive composition 31a to the adhesive composition 32a having a lower melt viscosity and are diffused into the adhesive composition 32a. For this reason, higher insulation reliability can be obtained between the adjacent wiring electrodes 12 and between the adjacent bumps 22.

  The adhesive compositions 31a and 32a are not limited to the case where they contain a film-forming resin, a thermosetting resin, a latent curing agent, a silane coupling agent, etc. You may make it consist of any material used as a composition.

  The anisotropic conductive film 30 may be provided with a release film on one or both of the uppermost surface and the lowermost surface.

  The release film is formed by, for example, applying a release agent such as silicone to PET (Poly Ethylene Terephthalate), OPP (Oriented Polypropylene), PMP (Poly-4-methlpentene-1), PTFE (Polytetrafluoroethylene), etc. While preventing the conductive film 30 from drying, the shape of the anisotropic conductive film 30 is maintained.

  The anisotropic conductive film 30 may be produced by any method, but can be produced, for example, by the following method. An insulating adhesive composition 32a containing a film-forming resin, a thermosetting resin, a latent curing agent, a silane coupling agent, and the like is prepared. The adjusted adhesive composition 32a is applied onto the first release film using a bar coater, a coating device, or the like, and dried by an oven or the like to obtain the insulating adhesive layer 32.

  In addition, the conductive adhesive composition is prepared by dispersing the conductive particles 31b in the insulating adhesive composition 31a. The adjusted conductive adhesive composition is applied to the second release film using a bar coater, a coating device or the like, and dried by an oven or the like to obtain the conductive particle-containing layer 31. One surface of the insulating adhesive layer 32 and one surface of the conductive particle-containing layer 31 are bonded together using a laminator or the like to obtain a two-layer anisotropic conductive film 30.

  Next, a method for manufacturing a connection structure, a connection structure, and a connection method according to the present embodiment will be described in detail. First, as shown in FIG. 6, the anisotropic conductive film is formed so that the conductive particle-containing layer 31 faces the connection surface 11 on the connection surface 11 of the glass substrate 1 placed on the substrate support base 41. 30 is arranged. And as shown in FIG. 7, the head part 44 connected to the support part 43 of the pressure bonder 42 which is a temporary sticking apparatus is heated, and the pressurization surface 44a of the heated head part 44 is made into the upper surface of the insulating adhesive layer 32. Press lightly and pressurize at low pressure. By the heat pressing by the head portion 44, the insulating adhesive compositions 31a and 32a are heated and pressed at a low temperature that does not harden. Thereby, the anisotropic conductive film 30 is temporarily pasted on the glass substrate 1 (temporary pasting process). In this way, in the temporary sticking step, the insulating adhesive composition 31a of the conductive particle-containing layer 31 flows but is heated and pressed at a low temperature and low pressure so as not to be cured, so that the conductive particle-containing layer 31 and the glass are heated. The anisotropic conductive film 30 is temporarily attached so as to face the substrate 1 side.

  The pressurizing pressure in the temporary pasting step can be set to a predetermined value of 0.5 MPa to 2 MPa, for example. Moreover, heating temperature can be made into the predetermined value in the temperature of 60-100 degreeC, for example. Moreover, the heat pressurization time in a temporary sticking process can be made into the predetermined time in 1-3 seconds (sec), for example.

  In addition, after temporarily sticking the anisotropic conductive film 30 in the temporary sticking step, the alignment state of the anisotropic conductive film 30 is confirmed. Later, the anisotropic conductive film 30 may be peeled off and the anisotropic conductive film 30 may be temporarily attached again at the correct position (a repair process).

  Next, as shown in FIG. 8, the IC chip 2 is disposed on the anisotropic conductive film 30 so that the bumps 22 and the wiring electrodes 12 face each other (arrangement step).

  Thereafter, the glass substrate 1 and the IC chip 2 are connected. Specifically, as shown in FIG. 9, the head portion 53 connected to the support portion 52 of the pressure bonder 51 as a connecting device is heated, and the pressure surface 53 a of the heated head portion 53 is changed to the upper surface of the IC chip 2. The glass substrate 1 and the IC chip 2 are pressed and connected to each other (connection process).

  The pressurization pressure by the head part 53 in a connection process can be made into the predetermined value of 5 MPa-100 MPa, for example. Moreover, the heating temperature of the head part 53 can be made into the predetermined value of the temperature which the insulating adhesive composition 31a, 32a of the anisotropic conductive film 30 hardens | cures, for example, 150-220 degreeC. Moreover, the heat pressurization time in a connection process can be made into predetermined time in 5 to 20 seconds, for example.

  In the connecting step, by applying heat and pressure under such conditions, the insulating adhesive compositions 31a and 32a of the anisotropic conductive film 30 are melted and conductive between the wiring electrode 12 and the bump 22. The particles 31b are sandwiched to cure the adhesive compositions 31a and 32a. Thereby, the glass substrate 1 and the IC chip 2 are electrically and mechanically connected.

  In the present embodiment, at the time of heat-pressing, the conductive particles 31b move along the side surfaces of the guide surface portions 131 and 132 orthogonal to the standing direction of the guide plate 13 in the fluid adhesive compositions 31a and 32a. Moving. As a result, since a large number of conductive particles 31b do not enter between the adjacent wiring electrodes 12 and between the adjacent bumps 22, occurrence of a short circuit is suppressed, and good insulation reliability can be obtained. Since the conductive particles 31b move along the side surfaces of the guide surface portions 131 and 132 of the guide plate 13 in the adhesive compositions 31a and 32a that melt and flow, the conductive particles 31b are sufficiently collected on the wiring electrode 12. Thus, a high particle capture rate can be obtained. And since many electroconductive particle 31b is clamped between the bump 22 and the wiring electrode 12, and is fully crushed, favorable conduction | electrical_connection reliability can be maintained.

  As mentioned above, although this Embodiment was described, it cannot be overemphasized that this invention is not limited to the above-mentioned embodiment, A various change is possible in the range which does not deviate from the summary of this invention.

  In the above-described embodiment, an anisotropic conductive film formed by film formation is used as the anisotropic conductive adhesive member. However, the anisotropic conductive film is not limited to this. For example, conductive particles are dispersed in the insulating adhesive composition. Made of a conductive adhesive paste or a paste-like anisotropic conductive adhesive member that is made of a conductive adhesive paste and an insulating adhesive paste, which are used by being applied in layers. Also good.

  In the above-described embodiment, the case where the present invention is applied to COG (Chip On Glass) has been described. However, the present invention is not limited to other mounting methods such as FOG (Film On Glass) and FOB (Film On Board). It can also be applied to.

  Moreover, although the above-mentioned embodiment demonstrated the case where a glass substrate was used as a board | substrate, other board | substrates, such as a rigid board | substrate and a flexible substrate, may be sufficient. Moreover, although the above-mentioned embodiment demonstrated the case where IC chip was used as an electronic component, wiring materials, capacitors, etc., such as a flexible printed circuit board, may be sufficient.

  Hereinafter, specific examples of the present invention will be described based on experimental results.

<Example 1>
An anisotropic conductive film having a two-layer structure in which the following conductive particle-containing layer and an insulating adhesive layer were laminated was prepared.

(Conductive particle-containing layer)
30 parts by mass of bis A type phenoxy resin (trade name YP50, manufactured by Nippon Steel Chemical Co., Ltd.), 30 parts by mass of bisphenol A type liquid epoxy resin (trade name EP 828, manufactured by Mitsubishi Chemical Corporation), imidazole-based latent curing agent (trade name) PHX3941HP, manufactured by Asahi Kasei Co., Ltd.) 40 parts by mass, epoxy silane coupling agent (trade name A-187, manufactured by Momentive Performance Materials Co., Ltd.) 1 part by mass, conductive particles having a particle diameter of 3.25 μm (trade name) Toluene was added to 35 parts by mass of Micropearl AU (manufactured by Sekisui Chemical Co., Ltd.) to prepare a composition having a solid content of 50%. The prepared composition was applied onto a release substrate and dried by heating in an oven to produce a conductive particle-containing layer having a thickness of 8 μm.

(Insulating adhesive layer)
25 parts by mass of bis A type phenoxy resin (trade name YP50, manufactured by Nippon Steel Chemical Co., Ltd.), 35 parts by mass of bisphenol A type liquid epoxy resin (trade name EP 828, manufactured by Mitsubishi Chemical Corporation), imidazole-based latent curing agent (trade name) PHX3941HP (manufactured by Asahi Kasei Co., Ltd.) 40 parts by mass, epoxy-based silane coupling agent (trade name A-187, manufactured by Momentive Performance Materials Co., Ltd.) 1 part by mass of toluene to prepare a composition having a solid content of 50% did. The adjusted composition was applied onto a release substrate and dried by heating in an oven to prepare an insulating adhesive layer having a thickness of 12 μm.

  By laminating the conductive particle-containing layer thus adjusted and the insulating adhesive layer, a two-layer anisotropic conductive film was produced.

A glass substrate having a plurality of wiring electrodes formed on the connection surface at a fine pitch was prepared. DHM (D-H Material) Co., Ltd., which forms a V-shape with a height of 15 μm and two guide surface portions in one of the regions facing each other through the region between the wiring electrodes formed on the connection surface of the glass substrate In addition, a guide plate of Exoma (styrene type vinyl ester resin) was erected. Guide plate of the guide surface part lateral tip from the shortest distance to the wire electrode (corresponding to the distance L ₁ in FIG. 1) has an average particle size as long as the conductive particles (1.0 times the particle diameter) did.

  This glass substrate was placed on a substrate support. An anisotropic conductive film was arranged on the connection surface of the glass substrate placed on the substrate support so that the conductive particle-containing layer was opposed to the connection surface. And the head part connected to the support part of the pressure bonder (Sony Chemical & Information Device Co., Ltd.) which is a temporary sticking apparatus is heated at 80 degreeC, and the pressurization surface of this heated head part is an insulating adhesive layer. Was pressed against the upper surface of the substrate and pressurized at 1 MPa for 2 seconds. An anisotropic conductive film was temporarily pasted on the glass substrate by this hot pressing.

  An IC chip was prepared in which bumps having a height of 15 μm were formed on the connection surface in a pattern corresponding to the wiring electrode pattern of the glass substrate. One of the regions facing each other through the region between the wiring electrodes formed on the connection surface of the IC chip is 15 μm high and is V-shaped, manufactured by DHM (DH Material) Co., Ltd. Ester resin) guide plates were erected.

The shortest distance from the side tip of the guide surface portion of the guide plate standing on the IC chip to the wiring electrode is the same as the shortest distance from the tip portion of the guide surface of the guide plate standing on the glass substrate to the bump. (corresponding to the distance L ₂ in FIG. 2), i.e., the same length as the particle diameter of the conductive particles (1.0 times the particle diameter). Such an IC chip was placed on an anisotropic conductive film with bumps and wiring electrodes facing each other.

  After that, the pressure surface of the head portion heated to 200 ° C. connected to the supporting portion of the pressure bonder as a connecting device is pressed against the upper surface of the IC chip at 60 MPa for 5 seconds to cause the glass substrate and the IC chip to be connected by pressure bonding. It was.

  The anisotropic conductive film was cured by such heat and pressure, and the IC chip and the glass substrate were connected. Thereafter, the pressure was released to obtain a connection structure.

<Example 2>
Conducts the shortest distance from the side surface tip of the guide surface portion of the guide plate formed on the glass substrate to the wiring electrode, and the shortest distance from the side surface tip of the guide surface portion of the guide plate formed on the IC chip to the bump. A connection structure was obtained in the same manner as in Example 1 except that the particle size of the conductive particles was 1.5 times.

<Example 3>
Conducts the shortest distance from the side surface tip of the guide surface portion of the guide plate formed on the glass substrate to the wiring electrode, and the shortest distance from the side surface tip of the guide surface portion of the guide plate formed on the IC chip to the bump. A connection structure was obtained in the same manner as in Example 1 except that the particle size was 2.0 times the particle size of the conductive particles.

<Example 4>
Conducts the shortest distance from the side surface tip of the guide surface portion of the guide plate formed on the glass substrate to the wiring electrode, and the shortest distance from the side surface tip of the guide surface portion of the guide plate formed on the IC chip to the bump. A connection structure was obtained in the same manner as in Example 1 except that the particle size was 3.0 times the particle size of the conductive particles.

<Example 5>
A connection structure was obtained in the same manner as in Example 1 except that conductive particles having an average particle diameter of 2.25 μm were used.

<Example 6>
A connection structure was obtained in the same manner as in Example 1 except that conductive particles having an average particle diameter of 3.75 μm were used.

<Example 7>
A connection structure was obtained in the same manner as in Example 1 except that the height of the guide plate was 18 μm.

<Example 8>
A connection structure was obtained in the same manner as in Example 1 except that the height of the guide plate was 8 μm.

<Example 9>
A connection structure was obtained in the same manner as in Example 1 except that the height of the guide plate was 6 μm.

<Comparative Example 1>
A connection structure was obtained in the same manner as in Example 1 except that the induction plate was not formed on the glass substrate.

<Comparative example 2>
Conducts the shortest distance from the side surface tip of the guide surface portion of the guide plate formed on the glass substrate to the wiring electrode, and the shortest distance from the side surface tip of the guide surface portion of the guide plate formed on the IC chip to the bump. A connection structure was obtained in the same manner as in Example 1 except that the particle size was 0.5 times the particle size of the conductive particles.

[Particle capture rate evaluation test]
For each connection structure of Examples 1 to 9 and Comparative Examples 1 and 2, the number of conductive particles (number of particles before connection) on the wiring electrode of the glass substrate before connection was calculated by the following equation (1). .
Number of particles before connection = particle (surface) density of conductive particles (number / mm ² ) × area of terminal (mm ² ) in the conductive particle-containing layer (1)

Further, the number of conductive particles on the wiring electrode after connection (number of particles after connection) was measured by counting with a metal microscope. And the particle | grain capture | acquisition rate of electroconductive particle was computed by following Formula (2).
Particle capture rate = (number of particles after connection / number of particles before connection) × 100 (2)

  About each connection structure of Examples 1-9 and Comparative Examples 1 and 2, the particle trapping rate is less than 20% x, the particle trapping rate is 20% or more and less than 25%, Δ, 25% or more and less than 35%, 35% or more was evaluated as ◎. The evaluation results are shown in [Table 1].

[Evaluation test for conduction reliability (after 85 ° C., 85% RH, 500 hours)]
The connection structures of Examples 1 to 5 and Comparative Examples 1 to 3 were left for 500 hours in an environment of 85 ° C. and humidity of 85%. With respect to each connection structure after being left as it is, the resistance value including the connection portion between the bump and the wiring electrode is less than 10Ω, the resistance value is 10Ω or more and less than 50Ω, ○, and the resistance value is 50Ω or more and less than 10Ω. , 100Ω or more was evaluated as x. The evaluation results are shown in [Table 1].

[Insulation reliability evaluation test]
A voltage of 30 V was applied to the various connection structures of Examples 1 to 5 and Comparative Examples 1 to 3 (two-terminal method), and the insulation resistance was measured. Between adjacent wiring electrodes of the connection structure immediately after manufacture (with a 10 μm space) The number of occurrences of (short) was counted. When the total number of measurements was 40 samples per connection structure, the insulation reliability was evaluated according to the following evaluation criteria. That is, the evaluation criteria were 20 or more ×, 5 or more and less than 20 Δ, 1 or more and less than 5 ◯, and less than 1 ◎. The evaluation results are shown in [Table 1].

  The evaluation results of each evaluation test are shown in [Table 1].

  In Example 1, the best results could be obtained in all of the particle capture rate, conduction reliability, and insulation reliability. In Example 1, the shortest distance from the tip in the lateral direction of the guide surface portion of the guide plate to the wiring electrode (bump) was 1.0 times the particle diameter of the conductive particles, and the height of the guide plate was 15 μm. It is considered that a large number of conductive particles flowed to the wiring electrode side along the side surface of the induction plate.

  As a result, in Example 1, the number of conductive particles entering between the adjacent wiring electrodes and between the adjacent bumps was reduced, and the occurrence of a short circuit was suppressed, and good insulation reliability was obtained. At the same time, it is considered that a high particle capture rate can be obtained between the wiring electrode and the bump by increasing the number of conductive particles collected on the wiring electrode. And since many conductive particles were crushed between a bump and a wiring electrode, it is thought that favorable conduction | electrical_connection reliability was acquired.

  From the results of Examples 1 to 4, in the glass substrate and the IC chip, the guide plate is such that the shortest distance from the tip in the lateral direction of the guide surface portion of the guide plate to the wiring electrode (bump) approaches the average particle diameter of the conductive particles. The number of conductive particles collected on the wiring electrode without entering between the guide surface portion and the wiring electrode (bump) increases, so that the particle capture rate, conduction reliability and insulation reliability are considered to have improved. .

  From the results of Examples 1, 5, and 6, in the glass substrate and the IC chip, the shortest distance from the tip in the lateral direction of the guide surface portion of the guide plate to the wiring electrode (bump) is the same size as the average particle size of the conductive particles. In the case of (1.0 times the conductive particles), it can be seen that the insulation reliability is the best in Example 1 in which the average particle size of the conductive particles is 3.25 μm.

  From the results of Examples 1 and 7 to 9, it can be seen that when the height of the guide plate is 8 to 15 μm, the particle trapping rate is the best. In Example 7, the height of the induction plate was too high, and in Example 9, the height of the induction plate was too low, so that the conductive particles could not be efficiently collected on the wiring electrode, and the particle capture rate However, it is thought that it has fallen somewhat.

  From the result of Comparative Example 1, when no induction plate is provided on either the glass substrate or the IC chip, a large number of conductive particles enter between adjacent wiring electrodes and adjacent bumps, thereby generating a short circuit and insulating. Reliability was poor. Accordingly, since the number of conductive particles collected on the wiring electrode is small, the particle capture rate is deteriorated, and as a result, it is considered that good conduction reliability cannot be obtained.

  From the result of Comparative Example 2, when the shortest distance from the tip in the lateral direction of the guide surface portion of the guide plate to the wiring electrode (bump) is 0.5 times the average particle size of the conductive particles in the glass substrate and IC chip Since the conductive particles are clogged between the induction plate and the wiring electrode and between the induction plate and the bump, it is considered that the particle trapping rate and the conduction reliability on the wiring electrode deteriorated. In addition, it is considered that due to the clogging of the conductive particles, a short circuit occurs between adjacent wiring electrodes and between adjacent bumps, which slightly deteriorates the insulation reliability.

  DESCRIPTION OF SYMBOLS 1 Glass substrate, 2 IC chip, 11, 21 Connection surface, 12 Wiring electrode, 13, 23 Induction plate, 22 Bump, 30 Anisotropic conductive film

Claims (6)

A connecting surface where a plurality of wiring electrodes of a substrate are arranged in parallel and a plurality of terminal electrodes of an electronic component are arranged in parallel via an anisotropic conductive adhesive in which conductive particles are dispersed in an insulating adhesive composition. In the manufacturing method of the connection structure in which the connection surface is connected,
At least one of the connection surface of the substrate and the connection surface of the electronic component is provided with a guide plate having a guide surface portion that guides the movement of the conductive particles,
The induction plate is erected in at least one of the regions facing each other through the region between the wiring electrodes and / or at least one of the regions facing each other through the region between the terminal electrodes,
In the guide surface portion, the side surface direction orthogonal to the standing direction of the guide plate faces the wiring electrode or the terminal electrode,
A connection structure in which the connection surface of the substrate and the connection surface of the electronic component are connected by crimping via the anisotropic conductive adhesive by heat and pressure, and the wiring electrode and the terminal electrode are anisotropically conductively connected. Body manufacturing method.   The method of manufacturing a connection structure according to claim 1, wherein the guide plate is formed on a connection surface of the substrate and a connection surface of the electronic component.   The shortest distance from the side surface tip of the guide surface portion of the substrate to the wiring electrode and the shortest distance from the side surface tip of the electronic component guide surface portion to the terminal electrode are both of the particle diameter of the conductive particles. The method for manufacturing a connection structure according to claim 1, wherein the connection structure is 1.0 to 3.0 times.   The shape of the guide plate formed on the connection surface of the substrate in plan view of the substrate and the shape of the guide plate formed on the connection surface of the electronic component in plan view of the electronic component are both determined by the guide surface portion. The manufacturing method of the connection structure of any one of Claim 1 thru | or 3 which comprises character shape. A connecting surface where a plurality of wiring electrodes of a substrate are arranged in parallel and a plurality of terminal electrodes of an electronic component are arranged in parallel via an anisotropic conductive adhesive in which conductive particles are dispersed in an insulating adhesive composition. In the connection structure in which the connecting surface is connected,
At least one of the connection surface of the substrate and the connection surface of the electronic component is provided with a guide plate having a guide surface portion that guides the movement of the conductive particles,
The induction plate is erected in at least one of the regions facing each other through the region between the wiring electrodes and / or at least one of the regions facing each other through the region between the terminal electrodes,
In the guide surface portion, the side surface direction orthogonal to the standing direction of the guide plate faces the wiring electrode or the terminal electrode,
The connection surface of the substrate and the connection surface of the electronic component are connected by crimping via the anisotropic conductive adhesive, and the wiring electrode and the terminal electrode are anisotropically conductively connected by thermal pressing. Connection structure. A connecting surface where a plurality of wiring electrodes of a substrate are arranged in parallel and a plurality of terminal electrodes of an electronic component are arranged in parallel via an anisotropic conductive adhesive in which conductive particles are dispersed in an insulating adhesive composition. In the connection method of connecting to the connecting surface,
At least one of the connection surface of the substrate and the connection surface of the electronic component is provided with a guide plate having a guide surface portion that guides the movement of the conductive particles,
The induction plate is erected in at least one of the regions facing each other through the region between the wiring electrodes and / or at least one of the regions facing each other through the region between the terminal electrodes,
In the guide surface portion, the side surface direction orthogonal to the standing direction of the guide plate faces the wiring electrode or the terminal electrode,
A connection method in which the connection surface of the substrate and the connection surface of the electronic component are crimped and connected to each other via the anisotropic conductive adhesive by heat and pressure, and the wiring electrode and the terminal electrode are anisotropically conductively connected. .

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