JP2012009414A5 - 電極 - Google Patents
電極 Download PDFInfo
- Publication number
- JP2012009414A5 JP2012009414A5 JP2011088822A JP2011088822A JP2012009414A5 JP 2012009414 A5 JP2012009414 A5 JP 2012009414A5 JP 2011088822 A JP2011088822 A JP 2011088822A JP 2011088822 A JP2011088822 A JP 2011088822A JP 2012009414 A5 JP2012009414 A5 JP 2012009414A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- crystalline silicon
- current collector
- mixed layer
- mixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 6
- 229910044991 metal oxide Inorganic materials 0.000 claims 3
- 150000004706 metal oxides Chemical class 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 1
Claims (3)
- 集電体と、
前記集電体上の混合層と、
前記混合層上の結晶性シリコン層と、を有し、
前記混合層は、金属元素及びシリコンを有し、
前記結晶性シリコン層は、ウィスカー状の結晶性シリコン領域を有することを特徴とする電極。 - 集電体と、
前記集電体上の混合層と、
前記混合層上の金属酸化物層と、
前記金属酸化物層上の結晶性シリコン層と、を有し、
前記混合層は、金属元素及びシリコンを有し、
前記結晶性シリコン層は、ウィスカー状の結晶性シリコン領域を有することを特徴とする電極。 - 請求項２において、
前記金属酸化物層は、酸化物半導体を有することを特徴とする電極。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011088822A JP5706747B2 (ja) | 2010-04-28 | 2011-04-13 | 蓄電装置の負極 |
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010104587 | 2010-04-28 | ||
| JP2010104587 | 2010-04-28 | ||
| JP2010122473 | 2010-05-28 | ||
| JP2010122610 | 2010-05-28 | ||
| JP2010122473 | 2010-05-28 | ||
| JP2010122610 | 2010-05-28 | ||
| JP2010122609 | 2010-05-28 | ||
| JP2010122609 | 2010-05-28 | ||
| JP2011088822A JP5706747B2 (ja) | 2010-04-28 | 2011-04-13 | 蓄電装置の負極 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012009414A JP2012009414A (ja) | 2012-01-12 |
| JP2012009414A5 true JP2012009414A5 (ja) | 2014-05-29 |
| JP5706747B2 JP5706747B2 (ja) | 2015-04-22 |
Family
ID=44857589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011088822A Expired - Fee Related JP5706747B2 (ja) | 2010-04-28 | 2011-04-13 | 蓄電装置の負極 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US9685275B2 (ja) |
| JP (1) | JP5706747B2 (ja) |
| TW (1) | TWI527297B (ja) |
| WO (1) | WO2011136028A1 (ja) |
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| DE112011101878T5 (de) * | 2010-06-01 | 2013-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Energiespeichervorrichtung und Herstellungsverfahren hierfür |
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| WO2011158722A1 (en) | 2010-06-18 | 2011-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
| US9076909B2 (en) | 2010-06-18 | 2015-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for manufacturing the same |
| WO2012002136A1 (en) | 2010-06-30 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of power storage device |
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| US9362556B2 (en) | 2010-12-07 | 2016-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device |
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| JP6035013B2 (ja) | 2011-08-30 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 電極の作製方法 |
| JP6000017B2 (ja) | 2011-08-31 | 2016-09-28 | 株式会社半導体エネルギー研究所 | 蓄電装置及びその作製方法 |
| JP2013054878A (ja) | 2011-09-02 | 2013-03-21 | Semiconductor Energy Lab Co Ltd | 電極の作製方法および蓄電装置 |
| JP6034621B2 (ja) | 2011-09-02 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 蓄電装置の電極および蓄電装置 |
| US9401247B2 (en) | 2011-09-21 | 2016-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for power storage device and power storage device |
| JP6218349B2 (ja) | 2011-09-30 | 2017-10-25 | 株式会社半導体エネルギー研究所 | 蓄電装置 |
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| US11495782B2 (en) | 2019-08-26 | 2022-11-08 | Graphenix Development, Inc. | Asymmetric anodes for lithium-based energy storage devices |
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-
2011
- 2011-04-07 WO PCT/JP2011/059219 patent/WO2011136028A1/en not_active Ceased
- 2011-04-13 JP JP2011088822A patent/JP5706747B2/ja not_active Expired - Fee Related
- 2011-04-18 US US13/088,592 patent/US9685275B2/en not_active Expired - Fee Related
- 2011-04-19 TW TW100113546A patent/TWI527297B/zh not_active IP Right Cessation
-
2017
- 2017-06-16 US US15/625,476 patent/US10236502B2/en not_active Expired - Fee Related
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