JP2012089630A - Semiconductor film and semiconductor device - Google Patents

Abstract

A semiconductor film and a highly reliable semiconductor device are provided that have high unevenness of a substrate and a high embedding property of a wire and can be stably wire-bonded.
A film for semiconductor 10 includes an adhesive layer 3, a first adhesive layer 1, a second adhesive layer 2, and a support film 4 laminated in this order. The semiconductor wafer 7 is laminated on the surface opposite to 1, and in this state, the semiconductor wafer 7 and the adhesive layer 3 are cut into individual pieces, and the semiconductor used for picking up the obtained individual pieces from the support film 4. When the adhesive layer 3 is heated at 130 ° C., the initial melt viscosity of the adhesive layer 3 is 100 Pa · s or less, and the adhesive layer 3 is heated at 130 ° C. for 30 minutes. 3 has a melt viscosity of 1,000 Pa or more, and the adhesive layer 3 has an elastic modulus at 175 ° C. of 1 MPa or more after heating the adhesive layer 3 at 130 ° C. for 30 minutes.
[Selection] Figure 1

Description

  The present invention relates to a semiconductor film and a semiconductor device.

  In response to the recent increase in functionality of electronic devices and expansion to mobile applications, there is an increasing demand for higher density and higher integration of semiconductor devices, and IC packages are increasing in capacity and density.

  In these semiconductor device manufacturing methods, first, an adhesive sheet is attached to a semiconductor wafer made of silicon, gallium, arsenic, etc., and the semiconductor wafer is separated into individual semiconductors by a dicing process while fixing the periphery of the semiconductor wafer with a wafer ring. The device is cut and separated (divided into individual pieces). Next, an expanding process for separating the individual semiconductor elements separated from each other and a pickup process for picking up the separated semiconductor elements are performed. Thereafter, the picked-up semiconductor element is transferred to a die bonding process for mounting on a metal lead frame or a substrate (for example, a tape substrate, an organic hard substrate, etc.). Thereby, a semiconductor device is obtained.

  In the die bonding process, the picked-up semiconductor element is stacked on another semiconductor element, whereby a chip stack type semiconductor device in which a plurality of semiconductor elements are mounted in one package can be obtained. Such a stack of semiconductor elements is usually stacked on a semiconductor element subjected to wire bonding.

  As an adhesive sheet used in such a method for manufacturing a semiconductor device, an adhesive sheet in which an adhesive layer and an adhesive layer are laminated in this order on a base film is known (for example, see Patent Document 1).

  However, in the conventional adhesive sheet (semiconductor film), the unevenness (step) of the substrate on which the semiconductor element is mounted and the wire of the semiconductor element subjected to wire bonding cannot be sufficiently embedded with the adhesive sheet, There is a problem that the reliability of the formed semiconductor device is lowered. In addition, when wire bonding is performed on a semiconductor element laminated on a semiconductor element using a conventional adhesive sheet (semiconductor film), it takes time to cure the adhesive sheet and is insufficiently cured. It was difficult to wire bond.

JP 2008-21112 A2

  SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor film and a highly reliable semiconductor device that have high substrate unevenness and wire embeddability and can be stably wire-bonded.

Such an object is achieved by the present inventions (1) to (7) below.
(1) An adhesive layer, at least one adhesive layer, and a support film are laminated in this order, and a semiconductor wafer is laminated on the surface of the adhesive layer opposite to the adhesive layer, and in this state, the semiconductor wafer And cutting the adhesive layer into individual pieces, and a semiconductor film used when picking up the obtained individual pieces,
When the adhesive layer is heated at 130 ° C., the initial melt viscosity of the adhesive layer is 100 Pa · s or less,
When the adhesive layer is heated at 130 ° C. for 30 minutes, the melt viscosity of the adhesive layer is 1,000 Pa · s or more,
A film for semiconductor, wherein an elastic modulus at 175 ° C. of the adhesive layer after heating the adhesive layer at 130 ° C. for 30 minutes is 1 MPa or more.

  (2) The said adhesive layer is a film for semiconductors as described in said (1) comprised with the resin composition containing a thermoplastic resin, a thermosetting resin, and a curing catalyst.

  (3) Content of the said curing catalyst is a film for semiconductors as described in said (2) which is 0.01-30 mass parts with respect to 100 mass parts of thermoplastic resins.

  (4) The film for a semiconductor according to the above (2) or (3), wherein the curing catalyst contains an imidazole compound.

  (5) The film for semiconductor according to any one of (2) to (4), wherein the thermoplastic resin is an acrylic resin.

  (6) The film for semiconductor according to any one of (2) to (5), wherein the thermosetting resin is an epoxy resin and / or a phenol resin.

  (7) A semiconductor device in which a semiconductor element and a substrate or a semiconductor element and a semiconductor element are bonded using the semiconductor film according to any one of (1) to (6).

  According to the present invention, it is possible to provide a semiconductor film and a highly reliable semiconductor device that have high unevenness of a substrate and a high embedding property of a wire and can be stably wire-bonded.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view (longitudinal sectional view) for explaining a preferred embodiment of a semiconductor film of the present invention and a method of manufacturing a semiconductor device using the semiconductor film. It is a figure (longitudinal sectional view) for explaining suitable embodiment of the manufacturing method of the semiconductor device using the film for semiconductors of the present invention. It is a figure (longitudinal sectional view) for explaining suitable embodiment of the manufacturing method of the semiconductor device using the film for semiconductors of the present invention. It is a figure for demonstrating the method to manufacture the film for semiconductors of this invention.

  Hereinafter, the film for semiconductor and the method for manufacturing a semiconductor device of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.

  1 to 3 are diagrams (longitudinal sectional views) for explaining a preferred embodiment of a semiconductor film of the present invention and a method of manufacturing a semiconductor device using the semiconductor film, and FIG. It is a figure for demonstrating the method to manufacture the film for semiconductors. In the following description, the upper side in FIGS. 1 to 4 is referred to as “upper” and the lower side is referred to as “lower”.

[Semiconductor film]
A semiconductor film 10 shown in FIG. 1 has a support film 4, a first adhesive layer 1, a second adhesive layer 2, and an adhesive layer 3. More specifically, the semiconductor film 10 is obtained by laminating the second adhesive layer 2, the first adhesive layer 1, and the adhesive layer 3 on the support film 4 in this order.

  As shown in FIG. 1A, such a semiconductor film 10 supports a semiconductor wafer 7 when the semiconductor wafer 7 is laminated on the upper surface of the adhesive layer 3 and the semiconductor wafer 7 is separated into individual pieces by dicing. At the same time, when the separated semiconductor wafer 7 (semiconductor element 71) is picked up, the first adhesive layer 1 and the adhesive layer 3 are selectively peeled off, so that the picked-up semiconductor element 71 is insulated from the insulating substrate. 5 and other semiconductor elements 71 have a function of providing an adhesive layer 31 for adhesion.

  Further, the outer peripheral portion 41 of the support film 4 and the outer peripheral portion 21 of the second adhesive layer 2 exist outside the outer peripheral edge 11 of the first adhesive layer 1, respectively.

  Among these, the wafer ring 9 is attached to the outer peripheral portion 21. Thereby, the semiconductor wafer 7 is reliably supported.

Hereinafter, first, the configuration of each part of the semiconductor film 10 will be described in detail.
(First adhesive layer)
The first adhesive layer 1 is composed of a general adhesive. Specifically, the 1st adhesion layer 1 is comprised by the 1st resin composition containing an acrylic adhesive, a rubber-type adhesive, etc.

  Examples of the acrylic pressure-sensitive adhesive include resins composed of (meth) acrylic acid and esters thereof, (meth) acrylic acid and esters thereof, and unsaturated monomers copolymerizable therewith (for example, vinyl acetate, And a copolymer with styrene, acrylonitrile, etc.). Two or more of these resins may be mixed.

  Of these, one or more selected from the group consisting of methyl (meth) acrylate, ethylhexyl (meth) acrylate and butyl (meth) acrylate, and selected from hydroxyethyl (meth) acrylate and vinyl acetate Preferred are copolymers with one or more of the above. Thereby, control of adhesiveness and adhesiveness with the other party (adherent body) which the 1st adhesion layer 1 adheres becomes easy.

  In addition, the first resin composition includes urethane acrylate, acrylate monomer, polyvalent isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate) in order to control adhesiveness (adhesiveness). Monomers and oligomers such as isocyanate compounds may be added.

  Further, in the first resin composition, when the first adhesive layer 1 is cured by ultraviolet rays or the like, methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxy is used as a photopolymerization initiator. Acetophenone compounds such as acetophenone and 2-methyl-1- [4- (methylthio) -phenyl] -2-morpholinopropane-1, benzophenone compounds, benzoin compounds, benzoin isobutyl ether compounds, methyl benzoin benzoate compounds A benzoin benzoic acid compound, a benzoin methyl ether compound, a benzylfinyl sulfide compound, a benzyl compound, a dibenzyl compound, a diacetyl compound, or the like may be added.

  Also, for the purpose of increasing adhesive strength and shear strength, tackifying rosin resin, terpene resin, coumarone resin, phenol resin, styrene resin, aliphatic petroleum resin, aromatic petroleum resin, aliphatic aromatic petroleum resin, etc. Materials and the like may be added.

  The average thickness of the first adhesive layer 1 is not particularly limited, but is preferably about 1 to 100 μm, more preferably about 3 to 50 μm. If the thickness is less than the lower limit value, it may be difficult to ensure sufficient adhesive strength. If the thickness exceeds the upper limit value, the characteristics are not significantly affected, and no advantage is obtained. When the thickness is within the above range, the first adhesive layer 1 having excellent dicing properties and pick-up properties can be obtained because it does not peel off particularly during dicing and can be peeled off relatively easily with a tensile load during pick-up. can get.

(Second adhesive layer)
The second adhesive layer 2 has higher adhesiveness than the first adhesive layer 1 described above. As a result, the adhesion between the second adhesive layer 2 and the wafer ring 9 is more tightly adhered than between the first adhesive layer 1 and the adhesive layer 3, and in the second step, the semiconductor wafer 7 is diced. Thus, when separating into pieces, the space between the second adhesive layer 2 and the wafer ring 9 is securely fixed. As a result, the positional deviation of the semiconductor wafer 7 is reliably prevented, and the dimensional accuracy of the semiconductor element 71 can be prevented from being lowered.

  As the second adhesive layer 2, the same material as the first adhesive layer 1 described above can be used. Specifically, the second adhesive layer 2 is composed of a second resin composition containing an acrylic adhesive, a rubber adhesive, and the like.

  Examples of the acrylic pressure-sensitive adhesive include resins composed of (meth) acrylic acid and esters thereof, (meth) acrylic acid and esters thereof, and unsaturated monomers copolymerizable therewith (for example, vinyl acetate, Copolymers with styrene, acrylonitrile, etc.) are used. Two or more kinds of these copolymers may be mixed.

  Of these, one or more selected from the group consisting of methyl (meth) acrylate, ethylhexyl (meth) acrylate and butyl (meth) acrylate, and selected from hydroxyethyl (meth) acrylate and vinyl acetate Preferred are copolymers with one or more of the above. Thereby, control of adhesiveness and adhesiveness with the other party (adhered body) which the 2nd adhesion layer 2 adheres becomes easy.

  In addition, the second resin composition includes urethane acrylate, an acrylate monomer, and a polyvalent isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate) in order to control adhesiveness (adhesiveness). Monomers and oligomers such as isocyanate compounds may be added.

  Furthermore, you may add the photoinitiator similar to a 1st resin composition to a 2nd resin composition.

  Also, for the purpose of increasing adhesive strength and shear strength, tackifying rosin resin, terpene resin, coumarone resin, phenol resin, styrene resin, aliphatic petroleum resin, aromatic petroleum resin, aliphatic aromatic petroleum resin, etc. Materials and the like may be added.

  The average thickness of the second adhesive layer 2 is not particularly limited, but is preferably about 1 to 100 μm, and more preferably about 3 to 20 μm. If the thickness is less than the lower limit, it may be difficult to ensure sufficient adhesive force, and even if the thickness exceeds the upper limit, a particularly excellent effect cannot be obtained. In addition, since the second adhesive layer 2 is higher in flexibility than the first adhesive layer 1, the shape following property of the second adhesive layer 2 is ensured if the average thickness of the second adhesive layer 2 is within the above range. Thus, the adhesion of the semiconductor film 10 to the semiconductor wafer 7 can be further enhanced.

(Adhesive layer)
The adhesive layer 3 is a layer having a function of adhering the picked-up semiconductor element 71 onto the insulating substrate 5 or another semiconductor element 71.

  By the way, in the conventional adhesive sheet (semiconductor film), the unevenness (step) of the substrate on which the semiconductor element is mounted and the wire of the semiconductor element subjected to wire bonding cannot be sufficiently embedded with the adhesive sheet, There is a problem that the reliability of the formed semiconductor device is lowered. In addition, when wire bonding is performed on a semiconductor element laminated on a semiconductor element using a conventional adhesive sheet (semiconductor film), it takes time to cure the adhesive sheet and is insufficiently cured. It was difficult to wire bond.

  In contrast, in the present invention, the initial melt viscosity of the adhesive layer when the adhesive layer is heated at 130 ° C. is 100 Pa · s or less, and the melt viscosity of the adhesive layer when heated at 130 ° C. for 30 minutes. Is 1,000 Pa · s or more, and the elastic modulus at 175 ° C. of the adhesive layer after heating the adhesive layer at 130 ° C. for 30 minutes is 1 MPa or more. By having such a feature, for example, when bonding a semiconductor element on a semiconductor element subjected to wire bonding as described later, the wire can be reliably embedded in the adhesive layer. This is because when the adhesive layer is heated at 130 ° C., the melt viscosity at the initial heating stage of the adhesive layer is relatively low, so that the wire is surely inserted into the adhesive layer before the adhesive layer is cured. Can be embedded. Furthermore, the melt viscosity of the adhesive layer when heated at 130 ° C. for 30 minutes is 1,000 Pa · s or more, and the elastic modulus at 175 ° C. of the adhesive layer after heating the adhesive layer at 130 ° C. for 30 minutes is 1 MPa. As described above, when wire bonding is performed on the mounted semiconductor element, the adhesive layer is surely cured. For this reason, wire bonding can be performed stably. As a result, a highly reliable semiconductor device can be provided.

  As described above, when the adhesive layer is heated at 130 ° C., the initial melt viscosity of the adhesive layer is 100 Pa · s or less, more preferably 1 to 90 Pa · s, and more preferably 10 to 70 Pa · s. More preferably. Thereby, the effect of this invention can be made more remarkable.

  Further, as described above, the melt viscosity of the adhesive layer when heated at 130 ° C. for 30 minutes is 1,000 Pa · s or more, more preferably 2,000 to 50,000 Pa · s. More preferably, it is 20,000-20,000 Pa.s. Thereby, the effect of this invention can be made more remarkable.

  As described above, the elastic modulus at 175 ° C. of the adhesive layer after heating the adhesive layer at 130 ° C. for 30 minutes is 1 MPa or more, more preferably 2 to 100 MPa, and more preferably 5 to 50 MPa. Is more preferable. Thereby, the effect of this invention can be made more remarkable.

  The adhesive layer 3 is made of, for example, a third resin composition that includes a thermoplastic resin, a thermosetting resin, and a curing catalyst. Such a resin composition is excellent in film forming ability, adhesiveness, and heat resistance after curing. Moreover, it is particularly excellent in the embedding property of the unevenness of the wire or the substrate.

  Among these, examples of the thermoplastic resin include polyimide resins such as polyimide resins and polyetherimide resins, polyamide resins such as polyamide resins and polyamideimide resins, acrylic resins, and phenoxy resins. Among these, acrylic resins are preferable. Since the acrylic resin has a low glass transition temperature, the initial adhesion of the adhesive layer 3 can be further improved, and the embedding property of the unevenness of the wire or the substrate can be further improved.

  The acrylic resin means a polymer of acrylic acid and its derivatives and a copolymer with other monomers, specifically, acrylic acid, methacrylic acid, methyl acrylate, ethyl acrylate, etc. Examples thereof include methacrylate esters such as acrylic ester, methyl methacrylate and ethyl methacrylate, polymers such as acrylonitrile and acrylamide, and copolymers with other monomers.

  Among acrylic resins, acrylic resins (particularly acrylic ester copolymers) having a compound having a functional group such as epoxy group, hydroxyl group, carboxyl group, nitrile group (copolymerization monomer component) are preferable. Thereby, the adhesiveness to adherends, such as semiconductor element 71, can be improved more. Specific examples of the compound having a functional group include glycidyl methacrylate having a glycidyl ether group, hydroxy methacrylate having a hydroxyl group, carboxy methacrylate having a carboxyl group, and acrylonitrile having a nitrile group.

  The compounding amount of the compound having the functional group is not particularly limited, but is preferably about 0.5 to 40% by mass, more preferably about 5 to 30% by mass of the entire acrylic resin. . If the blending amount is less than the lower limit value, the effect of improving the adhesion may be reduced, and if it exceeds the upper limit value, the adhesive force is too strong and the effect of improving workability may be reduced.

  The glass transition temperature of the thermoplastic resin is not particularly limited, but is preferably −25 to 120 ° C., more preferably −20 to 60 ° C., and further preferably −10 to 50 ° C. preferable. If the glass transition temperature is less than the lower limit, the adhesive strength of the adhesive layer 3 may be increased and workability may be reduced. If the glass transition temperature exceeds the upper limit, the effect of improving the low temperature adhesiveness may be reduced.

  Further, the weight average molecular weight of the thermoplastic resin (particularly acrylic resin) is not particularly limited, but is preferably 100,000 or more, particularly preferably 150,000 to 1,000,000. When the weight average molecular weight is within the above range, the film-forming property of the adhesive layer 3 can be improved, and the embedding property of the unevenness of the wire or the substrate can be further improved.

  On the other hand, as the thermosetting resin, for example, a novolak type phenol resin such as a phenol novolak resin, a cresol novolak resin, a bisphenol A novolak resin, a phenol resin such as a resol type phenol resin, a bisphenol such as a bisphenol A epoxy resin and a bisphenol F epoxy resin. Type epoxy resin, novolac epoxy resin, novolak type epoxy resin such as cresol novolak epoxy resin, biphenyl type epoxy resin, stilbene type epoxy resin, triphenolmethane type epoxy resin, alkyl-modified triphenolmethane type epoxy resin, epoxy resin containing triazine nucleus , Epoxy resins such as dicyclopentadiene-modified phenolic epoxy resins, urea (urea) resins, resins having a triazine ring such as melamine resins, Japanese polyester resin, bismaleimide resin, polyurethane resin, diallyl phthalate resin, silicone resin, resin having benzoxazine ring, cyanate ester resin, and the like, and one or a mixture of two or more of these may be used. Also good. Of these, epoxy resins or phenol resins are preferred. According to these resins, the heat resistance and adhesion of the adhesive layer 3 can be further improved, and the semiconductor element 71 can be more stably wire-bonded.

  Further, the content of the thermosetting resin is not particularly limited, but is preferably about 100 to 500 parts by mass, more preferably about 250 to 400 parts by mass with respect to 100 parts by mass of the thermoplastic resin. . When the content exceeds the upper limit, chipping and cracking may occur, or the effect of improving adhesion may be reduced, and the storage stability of the adhesive layer may be reduced, and the content is lower than the lower limit. If the adhesive strength is too strong, pick-up failure occurs, the effect of improving workability is reduced, and it may be difficult to stably wire bond the semiconductor element 71 with a short heat treatment. .

  The third resin composition preferably further contains a curing catalyst. Thereby, the sclerosis | hardenability of the contact bonding layer 3 can be improved, without impairing the embedding property of the contact bonding layer 3. FIG.

  Examples of the curing catalyst include amine catalysts such as imidazoles and 1,8-diazabicyclo (5,4,0) undecene, phosphorus catalysts such as triphenylphosphine, and the like. Of these, imidazoles are preferred. Thereby, it becomes excellent in both rapid-curing property and preservability, without impairing the embedding property of the contact bonding layer 3.

  Examples of imidazoles include 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 2-phenyl-4-methylimidazole, 1-cyanoethyl-2- Phenylimidazolium trimellitate, 2,4-diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- (1 ′)]-Ethyl-s-triazine, 2,4-diamino-6- [2′-ethyl-4′methylimidazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino-6 -[2'-Methylimidazolyl- (1 ')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole Null acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,4-diamino-6-vinyl-s-triazine, 2,4-diamino -6-vinyl-s-triazine isocyanuric acid adduct, 2,4-diamino-6-methacryloyloxyethyl-s-triazine, 2,4-diamino-6-methacryloyloxyethyl-s-triazine isocyanuric acid adduct, etc. Can be mentioned. Among these, 2-phenyl-4,5-dihydroxymethylimidazole or 2-phenyl-4-methyl-5-hydroxymethylimidazole is preferable. Thereby, the storage stability can be particularly improved.

  Further, the content of the curing catalyst is not particularly limited, but is preferably 0.01 to 30 parts by mass, more preferably 5 to 10 parts by mass with respect to 100 parts by mass of the thermoplastic resin. Thereby, the adhesive layer can be cured relatively quickly and efficiently without impairing the embedding property of the adhesive layer 3, and wire bonding can be performed on the semiconductor element 71 more stably.

  The average particle diameter of the curing catalyst is not particularly limited, but is preferably 10 μm or less, and more preferably 1 to 5 μm. When the average particle size is within the above range, the reactivity of the curing catalyst is particularly excellent.

  The third resin composition preferably further contains a curing agent (in particular, when the thermosetting resin is an epoxy resin, a phenolic curing agent). Thereby, the adhesive layer can be cured relatively quickly without impairing the embedding property of the adhesive layer 3, and wire bonding can be performed to the semiconductor element 71 more stably.

  Examples of the curing agent include aliphatic polyamines such as diethylenetriamine (DETA), triethylenetetramine (TETA), and metaxylylenediamine (MXDA), diaminodiphenylmethane (DDM), m-phenylenediamine (MPDA), diaminodiphenylsulfone ( DDS) and other aromatic polyamines, dicyandiamide (DICY), amine-based curing agents such as polyamine compounds containing organic acid dihydralazide, and the like, alicyclic acids such as hexahydrophthalic anhydride (HHPA) and methyltetrahydrophthalic anhydride (MTHPA) Acid anhydride curing agents such as anhydrides (liquid acid anhydrides), trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), and benzophenone tetracarboxylic acid (BTDA), phenolic resins Phenolic Agents, and the like. Among these, a phenolic curing agent is preferable, and specifically, bis (4-hydroxy-3,5-dimethylphenyl) methane (common name: tetramethylbisphenol F), 4,4′-sulfonyldiphenol, 4,4′- Isopropylidenediphenol (commonly called bisphenol A), bis (4-hydroxyphenyl) methane, bis (2-hydroxyphenyl) methane, (2-hydroxyphenyl) (4-hydroxyphenyl) methane, and bis (4- Hydroxyphenyl) methane, bis (2-hydroxyphenyl) methane, (2-hydroxyphenyl) (4-hydroxyphenyl) methane, a mixture of three types (for example, bisphenol FD manufactured by Honshu Chemical Industry Co., Ltd.) Bisphenols, 1,2-benzenediol, 1,3-benzenedio Dihydroxybenzenes such as 1,4-benzenediol, trihydroxybenzenes such as 1,2,4-benzenetriol, various isomers of dihydroxynaphthalenes such as 1,6-dihydroxynaphthalene, 2,2′- Examples include compounds such as various isomers of biphenols such as biphenol and 4,4′-biphenol.

  Further, the content of the curing agent (particularly phenolic curing agent) is not particularly limited, but is preferably 50 to 300 parts by mass, particularly 150 to 250 parts by mass with respect to 100 parts by mass of the thermoplastic resin. Is more preferable. Thereby, the adhesive layer can be cured relatively quickly and efficiently without impairing the embedding property of the adhesive layer 3, and wire bonding can be performed on the semiconductor element 71 more stably. When the content is lower than the lower limit value, the effect of improving the heat resistance of the adhesive layer 3 is deteriorated, the embedding property of the adhesive layer 3 is impaired, and it is difficult to stably wire bond the semiconductor element 71. If the content exceeds the upper limit, the storage stability of the adhesive layer 3 may be reduced.

  When using the curing agent (particularly a phenolic curing agent), in addition to a curing agent that is solid at 25 ° C., a liquid curing agent having a viscosity of 30 Pa · s (30,000 cps) or less at 25 ° C. is used in combination. Is preferred. Further, it preferably contains a liquid curing agent having a viscosity of 10 Pa · s (10,000 cps) or less at 25 ° C. The embedding property of the adhesive layer 3 can be improved when the viscosity of the curing agent at 25 ° C. is less than the specified value.

  The content of the liquid curing agent having a viscosity of 30 Pa · s (30,000 cps) or less at 25 ° C. is not particularly limited, but is preferably 30 to 80% by mass with respect to the entire curing agent, 40 to More preferably, it is 70 mass%. By setting it as the said range, since the wettability fall at the time of thermocompression bonding of the contact bonding layer 3 can be suppressed, the embedding property of the contact bonding layer 3 can be improved. Furthermore, since tackiness of the adhesive layer 3 can be reduced, workability can be improved.

  Examples of the liquid curing agent having a viscosity of 30 Pa · s (30,000 cps) or less at 25 ° C. include liquid phenol compounds. Specifically, bis (mono or di-t-butylphenol) propane, methylene bis (2-propenyl) phenol, propylene bis (2-propenyl) phenol, bis [(2-propenyloxy) phenyl] methane, bis [(2- Propenyloxy) phenyl] propane, 4,4 ′-(1-methylethylidene) bis [2- (2-propenyl) phenol], 4,4 ′-(1-methylethylidene) bis [2- (1-phenyl) Ethyl) phenol], 4,4 ′-(1-methylethylidene) bis [2-methyl-6-hydroxymethylphenol], 4,4 ′-(1-methylethylidene) bis [2-methyl-6- (2 -Propenyl) phenol], 4,4 '-(1-methyltetradecylidene) bisphenol. The viscosity of these liquid phenol compounds can be controlled by the number of nuclei n and the type of benzene ring substituent.

  As the liquid phenol compound, those obtained by polymerizing allylphenol and formaldehyde are preferable, and a polycondensate of 2- (2-propenyl) phenol and formaldehyde represented by the formula (2) is particularly preferable.

（式中、ｐ、ｑ、ｒは１〜３の整数を表す。Ｒ¹、Ｒ²、Ｒ³はアリル基を表す。）

(In the formula, p, q and r represent an integer of ^{1 to 3.} R ¹ , R ² and R ³ represent an allyl group.)

  In addition, when the above-described thermosetting resin is an epoxy resin, it can be determined by calculating the equivalent ratio of the epoxy resin and the curing agent, and the number of epoxy groups of the epoxy resin and the number of functional groups of the curing agent (for example, a phenol resin). The ratio to the number of phenolic hydroxyl groups is preferably 0.5 to 1.5, particularly preferably 0.7 to 1.3. If the content is less than the lower limit, the storage stability may be reduced, and if the content exceeds the upper limit, the effect of improving the heat resistance may be reduced.

  The third resin composition is not particularly limited, but preferably further includes a coupling agent. Thereby, the adhesiveness of resin, a to-be-adhered body, and a resin interface can be improved more.

  Examples of the coupling agent include a silane coupling agent, a titanium coupling agent, and an aluminum coupling agent. Of these, silane coupling agents are preferred. Thereby, heat resistance can be improved more.

  Among these, as the silane coupling agent, for example, vinyltrichlorosilane, vinyltrimethoxysilane, vinyltriethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldiethoxysilane, γ-methacryloxypropyltriethoxysilane, N-β (aminoethyl) γ-aminopropylmethyl Dimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysila N-phenyl-γ-aminopropyltrimethoxysilane, γ-chloropropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, bis (3 -Triethoxysilylpropyl) tetrasulfane and the like.

  Although content of a coupling agent is not specifically limited, It is preferable that it is about 0.01-10 mass parts with respect to 100 mass parts of thermoplastic resins, and it is more about 0.5-10 mass parts especially. preferable. If the content is less than the lower limit, the effect of adhesion may be insufficient, and if it exceeds the upper limit, it may cause outgassing or voids.

  In forming the adhesive layer 3, such a third resin composition is dissolved in a solvent such as methyl ethyl ketone, acetone, toluene, dimethylformaldehyde and the like to form a varnish, followed by a comma coater, a die coater, The adhesive layer 3 can be obtained by coating on a carrier film using a gravure coater or the like and drying.

  The average thickness of the adhesive layer 3 is not particularly limited, but is preferably about 3 to 100 μm, and more preferably about 5 to 70 μm. When the thickness is within the above range, it is particularly easy to control the thickness accuracy.

  Moreover, the 3rd resin composition may contain the filler as needed. By including the filler, the mechanical properties and adhesive strength of the adhesive layer 3 can be improved.

  Examples of the filler include particles of silver, titanium oxide, silica, mica, and the like.

  Moreover, it is preferable that the average particle diameter of a filler is about 0.1-25 micrometers. If the average particle size is less than the lower limit, the effect of filler addition is reduced, and if it exceeds the upper limit, the adhesive strength as a film may be reduced.

  Although content of a filler is not specifically limited, It is preferable that it is about 0.1-100 mass part with respect to 100 mass parts of thermoplastic resins, and it is more preferable that it is especially about 5-90 mass parts. Thereby, the adhesive force can be further increased while enhancing the mechanical properties of the adhesive layer 3.

(Support film)
The support film 4 is a support that supports the first adhesive layer 1, the second adhesive layer 2, and the adhesive layer 3 as described above.

  Examples of the constituent material of the support film 4 include polyethylene, polypropylene, polybutene, polybutadiene, polymethylpentene, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate, polybutylene terephthalate, polyurethane, and ethylene vinyl acetate copolymer. , Ionomer, ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylic acid ester copolymer, polystyrene, vinyl polyisoprene, polycarbonate, etc., and one or a mixture of two or more of these Is mentioned.

  The average thickness of the support film 4 is not particularly limited, but is preferably about 5 to 200 μm, and more preferably about 30 to 150 μm. Thereby, since the support film 4 has moderate rigidity, the first adhesive layer 1, the second adhesive layer 2, and the adhesive layer 3 are reliably supported to facilitate the handling of the semiconductor film 10. At the same time, when the semiconductor film 10 is appropriately curved, adhesion to the semiconductor wafer 7 can be enhanced.

(Characteristics of semiconductor film)
Although the 1st adhesion layer 1, the 2nd adhesion layer 2, and the contact bonding layer 3 have mutually different adhesive force (adhesion force), it is preferable that they have the following characteristics.

  First, the adhesive force of the first adhesive layer 1 to the adhesive layer 3 is preferably smaller than the adhesive force of the second adhesive layer 2 to the support film 4. Thereby, in the 3rd process mentioned below, when picking up the piece 83, between the support film 4 with the 2nd adhesion layer 2 does not exfoliate, but between adhesion layer 3 and the 1st adhesion layer 1 The gap is selectively peeled off. When dicing, the laminated body 8 can be reliably supported by the wafer ring 9.

  That is, in this embodiment, since the two adhesive layers of the 1st adhesion layer 1 and the 2nd adhesion layer 2 are used, it is laminated as mentioned above by making each adhesion power (adhesion power) different. It is possible to achieve both the secure fixing of the body 8 and the easy pick-up of the piece 83. In other words, both dicing properties and pickup properties can be achieved.

  The adhesion force of the first adhesive layer 1 to the adhesive layer 3 and the adhesion force of the second adhesive layer 2 to the wafer ring 9 are the kind (composition) of the acrylic resin, the kind of monomer, and the content, respectively. It can be adjusted by changing the hardness or the like.

  Further, the adhesion force of the first adhesive layer 1 to the adhesive layer 3 before dicing is not particularly limited, but it is preferably about 4 to 32 N / m, particularly about 12 to 24 N / m, on the average of the adhesion interface. Is more preferable. When the adhesive force is within the above range, problems such as the semiconductor element 71 falling off the first adhesive layer 1 when the laminated body 8 is expanded (expanded) as described later or the laminated body 8 is diced are prevented. In addition, excellent pick-up properties are ensured.

  In addition, “N / m”, which is a unit of the above-mentioned adhesion strength, is a 25 mm wide strip of a sample in which the adhesive layer 3 is pasted on the surface of the first adhesive layer 1, and then at 23 ° C. (room temperature) Value obtained by converting the load (unit N) per 1 m width when the adhesive layer portion is peeled at a peeling angle of 180 ° and a pulling speed of 1,000 mm / min in the laminated film (1,000 mm / 25 mm = 40 times larger) It is. That is, here, the adhesion force of the first adhesive layer 1 to the adhesive layer 3 will be described as 180 ° peel strength.

  As a composition of the 1st adhesion layer 1 which has the above characteristics, 1-50 mass parts of acrylate monomers and 0.1-10 mass parts of isocyanate compounds are mix | blended with respect to 100 mass parts of acrylic resins, for example. The thing which was done is mentioned.

  On the other hand, the adhesion force of the second adhesive layer 2 to the wafer ring 9 is not particularly limited, but is preferably about 40 to 800 N / m on the average of the adhesion interface, and more preferably about 160 to 480 N / m. preferable. When the adhesion is within the above range, when the laminate 8 is expanded (expanded) as described later, or when the laminate 8 is diced, the interface between the first adhesive layer 1 and the second adhesive layer 2 is peeled off. As a result, the semiconductor element 71 is reliably prevented from falling off. Further, the laminated body 8 can be reliably supported by the wafer ring 9.

  In addition, “N / m”, which is a unit of the above-mentioned adhesion force, is a support film 4 in which a strip-shaped second adhesive layer 2 having a width of 25 mm is laminated so that the second adhesive layer 2 is in contact with the upper surface of the wafer ring 9. Affixed at 23 ° C. (room temperature), and then peeled off the adhesive film at a peel angle of 180 ° and a pulling speed of 1,000 mm / min at 23 ° C. (room temperature). It is a value converted to a hit (1,000 mm / 25 mm = 40 times). That is, here, the adhesion force of the second adhesive layer 2 to the wafer ring 9 will be described as 180 ° peel strength.

  As a composition of the 2nd adhesion layer 2 which has the above characteristics, 1-50 mass parts of urethane acrylate and 0.5-10 mass parts of isocyanate compounds are blended with respect to 100 mass parts of acrylic resin, for example. The thing which was done is mentioned.

Incidentally, the adhesion to the first adhesive layer 3 of the adhesive layer 1 and A _1, when the adhesion to the first adhesive layer 1 of the second adhesive layer 2 and the A _2, A 2 _/ A ₁ is not particularly limited However, it is preferable that it is about 5-200, and it is more preferable that it is about 10-50. Thereby, the 1st adhesion layer 1, the 2nd adhesion layer 2, and the contact bonding layer 3 become the thing especially excellent in dicing property and pick-up property.

  Further, the adhesion force of the first adhesive layer 1 to the adhesive layer 3 is preferably smaller than the adhesion force of the adhesive layer 3 to the semiconductor wafer 7. Thereby, when the piece 83 is picked up, it is possible to prevent the interface between the semiconductor wafer 7 and the adhesive layer 3 from being unintentionally peeled off. That is, peeling can be selectively caused at the interface between the first adhesive layer 1 and the adhesive layer 3.

  The adhesion strength of the adhesive layer 3 to the semiconductor wafer 7 is not particularly limited, but is preferably about 20 to 200 N / m, and more preferably about 32 to 100 N / m. When the adhesion force is within the above range, it is possible to sufficiently prevent the occurrence of so-called “chip jump” in which the semiconductor element 71 flies off due to vibration or impact particularly during dicing.

  Moreover, it is preferable that the adhesive force with respect to the adhesive layer 3 of the 1st adhesive layer 1 is smaller than the adhesive force with respect to the 2nd adhesive layer 2 of the 1st adhesive layer 1. FIG. Thereby, when the piece 83 is picked up, it can prevent that the interface of the 1st adhesion layer 1 and the 2nd adhesion layer 2 peels unintentionally. That is, peeling can be selectively caused at the interface between the first adhesive layer 1 and the adhesive layer 3.

  In addition, although the adhesive force with respect to the 2nd adhesion layer 2 of the 1st adhesion layer 1 is not specifically limited, It is preferable that it is about 40-400 N / m, and it is more preferable that it is especially about 120-240 N / m. When the adhesion is within the above range, the dicing property and the pickup property are particularly excellent.

(Manufacturing method of semiconductor film)
The semiconductor film 10 as described above is manufactured, for example, by the following method.

  First, the base material 4a shown in FIG. 4A is prepared, and the first adhesive layer 1 is formed on one surface of the base material 4a. Thereby, the laminated body 61 of the base material 4a and the 1st adhesion layer 1 is obtained. The first adhesive layer 1 is formed by applying the above-described resin varnish containing the first resin composition by various application methods and then drying the applied film, or laminating a film made of the first resin composition. It can be performed by a method or the like. Further, the coating film may be cured by irradiating radiation such as ultraviolet rays.

  Examples of the coating method include a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, and a curtain coating method.

  Further, similarly to the laminated body 61, as shown in FIG. 4A, the adhesive layer 3 is formed on one surface of the prepared base material 4b, whereby the base material 4b and the adhesive layer 3 are formed. The laminate 62 is obtained.

  Further, in the same manner as each of the laminates 61 and 62, as shown in FIG. 4A, the second adhesive layer 2 is formed on one surface of the prepared support film 4, and thereby the support film 4 And the second adhesive layer 2 are obtained.

  Next, as illustrated in FIG. 4B, the stacked body 61 and the stacked body 62 are stacked so that the first adhesive layer 1 and the adhesive layer 3 are in contact with each other to obtain a stacked body 64. This lamination can be performed by, for example, a roll lamination method.

  Next, as shown in FIG. 4C, the base material 4 a is peeled from the laminate 64. And as shown in FIG.4 (d), the outer side part of the effective area | region of the said adhesive layer 3 and the said 1st adhesion layer 1 leaves the base material 4b with respect to the laminated body 64 which peeled the said base material 4a. Is removed in a ring shape. Here, the effective area refers to an area whose outer periphery is larger than the outer diameter of the semiconductor wafer 7 and smaller than the inner diameter of the wafer ring 9.

  Next, as shown in FIG. 4 (e), a laminate in which the base 4 a is peeled off and the outer portion of the effective area is removed in a ring shape so that the second adhesive layer 2 is in contact with the exposed surface of the first adhesive layer 1. 64 and the laminated body 63 are laminated. Then, the film 10 for semiconductors shown in FIG.4 (f) is obtained by peeling the base material 4b.

[Method for Manufacturing Semiconductor Device]
Next, a method for manufacturing the semiconductor device 100 using the semiconductor film 10 as described above will be described.

  1 to 3, the semiconductor device 7 is manufactured by laminating the semiconductor wafer 7 and the semiconductor film 10 to obtain the laminated body 8, and the outer peripheral portion 21 of the semiconductor film 10 is bonded to the wafer ring 9. The semiconductor wafer 7 and the adhesive layer 3 are separated into individual pieces by providing a cut 81 in the laminated body 8 from the side of the semiconductor wafer 7 (dicing), and a plurality of semiconductor elements 71 and adhesive layers 31 are formed. A second step of obtaining the piece 83, a third step of picking up at least one of the pieces 83, a fourth step of placing the picked piece 83 on the insulating substrate 5, and an insulating substrate And a fifth step of placing the individual piece 83 on the individual piece 83 (semiconductor element 71) placed thereon. Hereinafter, each step will be described in detail.

[1]
[1-1] First, a semiconductor wafer 7 and a semiconductor film 10 are prepared.

  The semiconductor wafer 7 has a plurality of circuits formed on its surface in advance. Examples of the semiconductor wafer 7 include a silicon semiconductor, a compound semiconductor wafer such as gallium arsenide and gallium nitride.

  The average thickness of the semiconductor wafer 7 is not particularly limited, and is preferably about 0.01 to 1 mm, more preferably about 0.03 to 0.5 mm. According to the manufacturing method of the semiconductor device, the semiconductor wafer 7 having such a thickness can be cut into pieces easily and reliably without causing defects such as chipping and cracking.

  [1-2] Next, as shown in FIG. 1A, the semiconductor film 10 and the semiconductor wafer 7 are bonded to each other while the adhesive layer 3 of the semiconductor film 10 and the semiconductor wafer 7 are brought into close contact with each other. Are stacked (first step). Note that in the semiconductor film 10 shown in FIG. 1, the size and shape of the adhesive layer 3 in plan view are set in advance to be larger than the outer diameter of the semiconductor wafer 7 and smaller than the inner diameter of the wafer ring 9. Has been. For this reason, the entire lower surface of the semiconductor wafer 7 is in close contact with the entire upper surface of the adhesive layer 3, whereby the semiconductor wafer 7 is supported by the semiconductor film 10.

  As a result of the above lamination, as shown in FIG. 1B, a laminated body 8 in which the semiconductor film 10 and the semiconductor wafer 7 are laminated is obtained.

[2]
[2-1] Next, a wafer ring 9 is prepared. Subsequently, the stacked body 8 and the wafer ring 9 are stacked so that the upper surface of the outer peripheral portion 21 of the second adhesive layer 2 and the lower surface of the wafer ring 9 are in close contact with each other. Thereby, the outer peripheral part of the laminated body 8 is supported by the wafer ring 9.

  Since the wafer ring 9 is generally made of various metal materials such as stainless steel and aluminum, the wafer ring 9 has high rigidity and can surely prevent the laminate 8 from being deformed.

  By having two adhesive layers (first adhesive layer 1 and second adhesive layer 2) having different adhesiveness as described above, the semiconductor film 10 utilizes the difference in adhesiveness, Both dicing and pickup properties can be achieved.

  [2-2] Next, a dicer table (not shown) is prepared, and the laminate 8 is placed on the dicer table so that the dicer table and the support film 4 are in contact with each other.

  Subsequently, as shown in FIG. 1C, a plurality of cuts 81 are formed in the laminate 8 using a dicing blade 82 (dicing). The dicing blade 82 is composed of a disk-shaped diamond blade or the like, and a cut 81 is formed by pressing the dicing blade 82 against the surface of the laminated body 8 on the semiconductor wafer 7 side. Then, the semiconductor wafer 7 is separated into a plurality of semiconductor elements 71 by relatively moving the dicing blade 82 along the gap between the circuit patterns formed on the semiconductor wafer 7 (second step). ). Similarly, the adhesive layer 3 is divided into a plurality of adhesive layers 31. During such dicing, vibration and impact are applied to the semiconductor wafer 7, but the lower surface of the semiconductor wafer 7 is supported by the semiconductor film 10, so that the vibration and impact are alleviated. As a result, the occurrence of defects such as cracks and chippings in the semiconductor wafer 7 can be reliably prevented.

  The depth of the notch 81 is not particularly limited as long as it can penetrate the semiconductor wafer 7 and the adhesive layer 3. That is, the tip of the cut 81 only needs to reach any of the first adhesive layer 1, the second adhesive layer 2, and the support film 4. Thereby, the semiconductor wafer 7 and the adhesive layer 3 are surely separated into individual pieces, and the semiconductor element 71 and the adhesive layer 31 are formed, respectively.

  In the present embodiment, an example will be described in which the tip of the cut 81 reaches the support film 4 as shown in FIG. Thus, when the cut 81 is provided so that the tip reaches the support film 4, the thickness of the support film 4 is sufficiently thick compared to the thickness of the first adhesive layer 1 and the second adhesive layer 2, In consideration of the positional accuracy of the dicing blade 82 in the vertical direction and the variation in the depth of the notch 81, it is possible to improve the manufacturability. In other words, in order to form the cut 81 so that the tip is held in the first adhesive layer 1 or the second adhesive layer 2, it is necessary to strictly control the vertical position of the dicing blade 82, and the production efficiency May decrease.

[3]
[3-1] Next, the laminate 8 in which the plurality of cuts 81 are formed is radially expanded (expanded) by an expanding device (not shown). Thereby, as shown in FIG.1 (d), the width | variety of the notch 81 formed in the laminated body 8 spreads, and the space | interval of the semiconductor elements 71 separated into pieces is also expanded in connection with it. As a result, there is no possibility that the semiconductor elements 71 interfere with each other, and the individual semiconductor elements 71 can be easily picked up. Note that the expanding device is configured to maintain such an expanded state even in a process described later.

  [3-2] Next, one of the separated semiconductor elements 71 is adsorbed by a collet (chip adsorbing portion) of the die bonder and pulled upward by a die bonder (not shown). As a result, as shown in FIG. 2 (e), the interface between the adhesive layer 31 and the first adhesive layer 1 is selectively peeled off, and an individual piece 83 formed by laminating the semiconductor element 71 and the adhesive layer 31 is picked up. (Third step).

  Note that the reason why the interface between the adhesive layer 31 and the first adhesive layer 1 is selectively peeled is that the adhesive property of the second adhesive layer 2 is higher than the adhesive property of the first adhesive layer 1 as described above. The adhesive force at the interface between the film 4 and the second adhesive layer 2 and the adhesive force at the interface between the second adhesive layer 2 and the first adhesive layer 1 are based on the adhesive force between the first adhesive layer 1 and the adhesive layer 3. Because it is big. That is, when the semiconductor element 71 is picked up, the interface between the first adhesive layer 1 and the adhesive layer 3 having the smallest adhesion among these three locations is selectively peeled off.

  Further, when picking up the individual piece 83, the individual piece 83 to be picked up may be selectively pushed up from below the semiconductor film 10. Thereby, since the piece 83 is pushed up from the laminated body 8, the pickup of the piece 83 mentioned above can be performed more easily. In order to push up the individual piece 83, a needle-like body (needle) that pushes up the semiconductor film 10 from below is used.

[4]
[4-1] Next, the insulating substrate 5 for mounting (mounting) the semiconductor element 71 (chip) is prepared.

  Examples of the insulating substrate 5 include an insulating substrate on which a semiconductor element 71 is mounted and wiring and terminals for electrically connecting the semiconductor element 71 and the outside are provided.

Specifically, flexible substrates such as polyester copper-clad film substrates, polyimide copper-clad film substrates, aramid copper-clad film substrates, glass-based copper-clad laminates such as glass cloth and epoxy copper-clad laminates, and glass nonwoven fabrics -Composite copper-clad laminates such as epoxy copper-clad laminates, heat-resistant and thermoplastic substrates such as polyetherimide resin substrates, polyetherketone resin substrates, polysulfone resin substrates, alumina substrates, aluminum nitride substrates And ceramic substrates such as silicon carbide substrates, bismaleimide-triazine (BT) substrates, and the like.
Instead of the insulating substrate 5, a lead frame or the like may be used.

  Next, as shown in FIG. 2 (f), the picked-up pieces 83 are placed on the insulating substrate 5.

  [4-2] Next, as shown in FIG. 2G, the pieces 83 placed on the insulating substrate 5 are heated and pressure-bonded. As a result, the semiconductor element 71 and the insulating substrate 5 are bonded (die bonding) via the adhesive layer 31 (fourth step).

  As conditions for heating and pressure bonding, for example, the heating temperature is preferably about 100 to 300 ° C, and more preferably about 100 to 200 ° C. Further, the pressure bonding time is preferably about 1 to 10 seconds, and more preferably about 1 to 5 seconds.

  Moreover, you may heat-process after that. The heating conditions in this case are such that the heating temperature is preferably about 100 to 300 ° C., more preferably about 150 to 250 ° C., and the heating time is preferably about 1 to 240 minutes, more preferably about 10 to 60 minutes. The

  Thereafter, as shown in FIG. 2H, the terminals (not shown) of the semiconductor element 71 and the terminals (not shown) on the insulating substrate 5 are electrically connected by wires 84. For this connection, instead of the wire 84, a conductive paste, a conductive film, or the like may be used.

  [4-3] Next, the piece 83 is picked up in the same manner as in [3-2] above, and the piece 83 is bonded to the insulating substrate 5 as shown in FIG. After placing on the (semiconductor element 71), the piece 83 placed on the semiconductor element 71 is heated and pressure-bonded in the same manner as in [4-2] above. Thereby, the semiconductor element 71 and the semiconductor element 71 are bonded (die bonding) through the adhesive layer 31 (fourth step).

  Thereafter, similarly to the above [4-2], as shown in FIG. 3I, the terminals (not shown) of the stacked semiconductor elements 71 and the terminals (not shown) on the insulating substrate 5 are wired. Electrical connection is made at 84.

  Then, each piece 83 and each wire 84 placed on the insulating substrate 5 are covered with a resin material to form a mold layer 85. Examples of the resin material constituting the mold layer 85 include various mold resins such as an epoxy resin.

  Further, a semiconductor device as shown in FIG. 3 (j), in which the semiconductor element 71 is accommodated in a package by bonding a ball-shaped electrode 86 to a terminal (not shown) provided on the lower surface of the insulating substrate 5. 100 (semiconductor device of the present invention) is obtained.

  According to the method as described above, in the third step, the semiconductor element 71 is picked up with the adhesive layer 31 attached, that is, in the state of the piece 83, so in the fourth and fifth steps, The adhesive layer 31 can be used for adhesion to the insulating substrate 5 as it is. For this reason, it is not necessary to separately prepare an adhesive or the like, and the manufacturing efficiency of the semiconductor device 100 can be further increased.

  Further, since the adhesive layer 31 has a high embedding property, the wire 84 can be reliably embedded in the adhesive layer 31, and further, since the curability is hard, further wire bonding can be stably performed.

  The adhesive layer 31 between the insulating substrate 5 and the semiconductor element 71 may have the same composition as the adhesive layer 31 between the semiconductor element 71 and the semiconductor element 71, but the semiconductor element 71 and the semiconductor element 71 The composition may be different from the adhesive layer 31 in between. As a result, the insulating substrate 5 can be more stably bonded. The thickness is preferably thinner than the adhesive layer 31 between the semiconductor element 71 and the semiconductor element 71. Thereby, the thickness of the semiconductor device 100 can be reduced.

  As mentioned above, although the film for semiconductors of this invention and the manufacturing method of a semiconductor device were demonstrated based on embodiment of illustration, this invention is not limited to these.

  For example, the package form is a CSP (Chip Size Package) such as BGA (Ball Grid Array) or LGA (Land Grid Array), a surface mount type package such as TCP (Tape Carrier Package), or DIP (Dual Inline Package). Further, it may be an insertion type package such as PGA (Pin Grid Array), and is not particularly limited.

  In each of the above embodiments, the case where the piece 83 is mounted on the insulating substrate 5 has been described. However, the piece 83 may be mounted on another semiconductor element. That is, the manufacturing method of the semiconductor device can also be applied when manufacturing a chip stack type semiconductor device in which a plurality of semiconductor elements are stacked. Thereby, there is no possibility that shavings or the like enter between the semiconductor elements, and a highly reliable chip stack type semiconductor device can be manufactured with a high manufacturing yield.

  When the semiconductor film of the present invention is subjected to dicing, the depth of the notch 81 is not particularly limited as long as the notch 81 capable of separating the semiconductor wafer 7 and the adhesive layer 3 is formed.

  In the above-described embodiment, the adhesive layer is described as being composed of two layers, the first adhesive layer and the second adhesive layer. However, the present invention is not limited to this, and the adhesive layer may be composed of only one layer. It may be composed of three or more layers.

  Moreover, in the manufacturing method of the semiconductor device, an arbitrary process can be added as necessary.

Hereinafter, specific examples of the present invention will be described.
1. Production of film for semiconductor (Example 1)
<1> Formation of first adhesive layer 100 parts by mass of a copolymer as a base resin having a weight average molecular weight of 300,000 obtained by copolymerizing 30% by mass of 2-ethylhexyl acrylate and 70% by mass of vinyl acetate 45 parts by mass of a pentafunctional acrylate monomer having a molecular weight of 700 as an energy ray curable resin, 5 parts by mass of 2,2-dimethoxy-2-phenylacetophenone as an energy ray curing initiator, and tolylene diisocyanate (Coronate T) -100, manufactured by Nippon Polyurethane Industry Co., Ltd.), and applied to a polyethylene terephthalate film having a thickness of 38 μm peeled to a thickness of 10 μm after drying, and then at 80 ° C. Dry for 5 minutes. And the ultraviolet-ray 500mJ / cm < ² > was irradiated with respect to the obtained coating film, and the 1st adhesion layer was formed into a film on the polyethylene terephthalate film.

<2> Formation of Second Adhesive Layer 100 parts by mass of a copolymer having a weight average molecular weight of 500,000 obtained by copolymerizing 70% by mass of butyl acrylate and 30% by mass of 2-ethylhexyl acrylate, and tolylene 3 parts by mass of isocyanate (Coronate T-100, manufactured by Nippon Polyurethane Industry Co., Ltd.) was applied to a polyethylene terephthalate film having a thickness of 38 μm which was subjected to a release treatment so that the thickness after drying was 10 μm. And dried at 80 ° C. for 5 minutes. And the 2nd adhesion layer was formed into a film on the polyethylene terephthalate film. Thereafter, a polyethylene sheet having a thickness of 100 μm was laminated as a support film.

<3> Formation of Adhesive Layer Acrylate ester copolymer (ethyl acrylate-butyl acrylate-acrylonitrile-acrylic acid-hydroxyethyl methacrylate copolymer methyl ethyl ketone (MEK) dissolved product, manufactured by Nagase ChemteX Corporation, SG-708 −6, Tg: 6 ° C., weight average molecular weight: 500,000) 100 parts by mass, epoxy resin (EPICLON-N-685-EXP-S, epoxy group equivalent 205 g / eq, softening point 85 ° C., DIC (manufactured by DIC Corporation) 346 parts by mass, γ-glycidoxypropyltrimethoxysilane (KBM403E, manufactured by Shin-Etsu Chemical Co., Ltd.) 1.0 part by mass added as a coupling agent, and phenol resin (PR -HF-3, hydroxyl group equivalent of 104 g / OH group, softening point of 80 ° C, Sumitomo Bakelite Co., Ltd. ) 86 parts by mass, 129 parts by mass of a liquid phenolic resin (MEH8000H, hydroxyl group equivalent 141 g / OH group, manufactured by Meiwa Kasei Kogyo Co., Ltd.), and an imidazole compound (2-phenyl-4,5-dihydroxymethylimidazole) as a curing catalyst (Product name: 2PHZ-PW, manufactured by Shikoku Chemicals Co., Ltd.) 5.7 parts by mass was dissolved in methyl ethyl ketone to obtain a resin varnish having a resin solid content of 49% by mass.

  Next, the obtained resin varnish was applied to a polyethylene terephthalate film (manufactured by Teijin DuPont Films Co., Ltd., product number Purex A43, thickness 38 μm) with a comma coater, and then dried at a temperature of 140 ° C. for 3 minutes. An adhesive layer having a thickness of 60 μm was formed on the terephthalate film.

<4> Manufacture of a film for semiconductor A film in which a first adhesive layer is formed and a film in which an adhesive layer is formed are laminated (laminated) so that the first adhesive layer and the adhesive layer are in contact with each other. The layer-side polyethylene terephthalate film was peeled off to obtain a laminate.

  Next, using a roll-shaped die, the first adhesive layer and the adhesive layer are punched out to be larger than the outer diameter of the semiconductor wafer and smaller than the inner diameter of the wafer ring, and then unnecessary portions are removed, and the second laminated body is removed. Got.

  Further, the polyethylene terephthalate film on one surface side of the second adhesive layer is peeled off. And these were laminated | stacked so that the 1st adhesion layer and 2nd adhesion layer of a said 2nd laminated body might contact | connect. Thereby, the film for semiconductors obtained by laminating five layers of the polyethylene sheet (support film), the second adhesive layer, the first adhesive layer, the adhesive layer, and the polyethylene terephthalate film in this order was obtained.

(Examples 2 to 5)
A film for a semiconductor was produced in the same manner as in Example 1 except that the third resin composition constituting the adhesive layer was one having the structure shown in Table 1.

  In Example 5, 2-phenyl-4-methyl-5-hydroxymethylimidazole (trade name: 2P4MHZ-PW, manufactured by Shikoku Kasei Kogyo Co., Ltd.) was used as the imidazole compound.

(Comparative Examples 1-6)
A film for a semiconductor was produced in the same manner as in Example 1 except that the third resin composition constituting the adhesive layer was one having the structure shown in Table 1.

  In Comparative Example 5, 1-cyanoethyl-2-phenylimidazole (trade name: 2PZ-CN, manufactured by Shikoku Chemicals Co., Ltd.) was used as the imidazole compound.

In each of the above Examples and Comparative Examples, the composition of the third resin composition constituting the adhesive layer, the initial melt viscosity of the adhesive layer when the adhesive layer is heated at 130 ° C., and the adhesive layer at 130 ° C. for 30 minutes. Heated at 50 ° C. for 1 day against the melt viscosity of the adhesive layer when heated, the elastic modulus at 175 ° C. of the adhesive layer after heating the adhesive layer at 130 ° C. for 30 minutes, and the initial heating value (mJ / mg) Table 1 shows the ratio of the calorific value after curing and the tack value measured by the probe tack method.
Each melt viscosity and elastic modulus were measured as follows.

(Melt viscosity)
Samples obtained by laminating several adhesive layers so as to have a thickness of 100 μm were used as samples, and the temperature increase rate was 10 ° C./30° C. in the temperature range of 30 to 250 ° C. using a product made by HAAKE Co., Ltd. In minutes, shear shear with a frequency of 1 Hz and a strain of 0.05 was applied, and the obtained value of the complex viscosity | η * |

(Elastic modulus)
The adhesive layer is cut into a strip shape having a width of 4 mm with a cutter knife, and a viscoelasticity measuring device (RSA-III, manufactured by TA Instruments Co., Ltd.) at a temperature range of 30 to 300 ° C., with a frequency of 10 Hz and a heating rate of 5 ° C./min The value of the tensile storage elastic modulus E ′ at 175 ° C. obtained was taken as the elastic modulus at 175 ° C.

2. Evaluation of storage stability and workability (storage stability)
The storage stability of the obtained adhesive layer is determined by measuring the heating value after curing the adhesive film at 50 ° C. for one day as an accelerated test, and the heating value after curing for the initial curing heat value (mJ / mg). The percentage of (mJ / mg) was determined and evaluated according to the following four criteria. Units%. The closer this value is to 100%, the higher the storage stability.

  The curing calorific value was measured using a differential scanning calorimeter (DSC) (DSC6200, manufactured by Seiko Instruments Inc.) at a measurement range of 30 to 300 ° C. and a heating rate of 10 ° C./min.

(Double-circle): The percentage of the ratio of the calorific value was 90% or more.
◯: The percentage of the ratio of the heat generation amount during curing was 70% or more and less than 90%.
(Triangle | delta): Percentage of ratio of the calorific value was 50% or more and less than 70%.
X: The percentage of the ratio of the calorific value was less than 50%.

(Workability (with or without tack))
The workability of the obtained adhesive layer was evaluated by the probe tack method for the presence or absence of tack according to the following four criteria. Each code is as follows.

A: No tack (0 gf / 5 mmφ or more and smaller than 20 gf / 5 mmφ)
○: Tack slightly, but no problem in practical use (20 gf / 5 mmφ or more and smaller than 50 gf / 5 mmφ)
Δ: Tack slightly, practically unusable (50gf / 5mmφ or more and smaller than 100gf / 5mmφ)
X: Tucked (100gf / 5mmφ or more)
These results are shown in Table 2.

3. Manufacturing of Semiconductor Device First, an 8-inch silicon wafer having a thickness of 100 μm was prepared.

  And the polyethylene terephthalate film was peeled from the film for semiconductors of each Example and each comparative example, and the silicon wafer was laminated | stacked on the peeling surface at 60 degreeC. Thereby, the laminated body formed by laminating five layers of the film for semiconductor and the silicon wafer in this order was obtained.

  Next, the laminate was diced (cut) from the silicon wafer side using a dicing saw (DFD6360, manufactured by DISCO Corporation) under the following conditions. As a result, the silicon wafer was singulated, and a semiconductor element having the following dicing size was obtained.

<Dicing conditions>
・ Dicing size: 10 mm × 10 mm square ・ Dicing speed: 50 mm / sec
・ Spindle speed: 40,000 rpm
・ Maximum depth of dicing: 0.175 mm (the amount of cut from the surface of the silicon wafer)
・ Dicing blade thickness: 15μm
・ Cross sectional area: 22.5 × 10 ⁻⁵ mm ² (cross sectional area at the tip side from the interface between the adhesive layer and the first adhesive layer)
In addition, the notch formed by this dicing had the front-end | tip reached in the 1st adhesion layer.

  Next, one of the semiconductor elements was pushed up with a needle from the back surface of the semiconductor film, and the pushed up surface of the semiconductor element was pulled up while being adsorbed by a collet of a die bonder. As a result, individual pieces of the semiconductor element and the adhesive layer were picked up.

  Next, the picked-up piece is applied to a bismaleimide-triazine resin substrate (circuit level difference: 5 to 10 μm) coated with a solder resist (manufactured by Taiyo Ink Manufacturing Co., Ltd., trade name: AUS308) at a temperature of 130 ° C. and a load of 5 N. For 1.0 second and die bonded.

  Next, the semiconductor element and the resin substrate were electrically connected by wire bonding with a 0.025 mmφ gold wire.

  Next, the individual pieces of the semiconductor element and the adhesive layer were picked up, and the picked up pieces were die-bonded onto the semiconductor element subjected to wire bonding by pressure bonding at a temperature of 130 ° C. and a load of 5 N for 1.0 second. .

  Subsequently, the laminated semiconductor element and the resin substrate were electrically connected by wire bonding with a 0.025 mmφ gold wire.

  Then, the semiconductor element and the bonding wire on the resin substrate were sealed with a sealing resin EME-G760 and subjected to a heat treatment at a temperature of 175 ° C. for 2 hours. Thereby, the sealing resin was cured to obtain a semiconductor device.

4). Evaluation of embeddability In the semiconductor device manufactured in each example and each comparative example, whether the wire penetrates the adhesive film from the side surface of the semiconductor device after mounting the second semiconductor element is observed by SEM, and the following criteria It evaluated according to.

(Double-circle): The wire has penetrated into the adhesive film.
X: The adhesive film is deforming the wire. Or the wire does not penetrate through the adhesive film.

5. Stable connectivity of wire bonding In the semiconductor device manufactured in each example and each comparative example, whether the wire is connected on the second semiconductor element was evaluated by the bonding strength of the ball bonding portion between the second semiconductor element and the wire . For the joint strength of the ball joint, measure the 10 breaking loads (shear strength) by the shear test method by reading the shear breaking strength by moving the jig parallel above the aluminum electrode, and the average value is Evaluation was performed according to the four-stage criteria.

A: Shear strength 20 gf or more B: Shear strength 15 gf or more and less than 20 gf Δ: Shear strength 10 gf or more and less than 15 gf ×: Shear strength 10 gf or less, or the second semiconductor element has moved due to the impact of wire bonding.
These results are shown together in Table 2.

As can be seen from Table 2, the semiconductor film of the present invention had high substrate unevenness and wire embeddability. In addition, the semiconductor film of the present invention can be stably wire-bonded.
In contrast, satisfactory results were not obtained with the comparative film for semiconductors.

DESCRIPTION OF SYMBOLS 1 1st adhesion layer 11 Outer periphery 2 2nd adhesion layer 21 Outer peripheral part 3, 31 Adhesive layer 4 Support film 41 Outer peripheral part 4a, 4b Base material 5 Insulating substrate 61-64 Laminated body 7 Semiconductor wafer 71 Semiconductor element 8 Laminated body 81 Cut 82 Dicing blade 83 Piece 84 Wire 85 Mold layer 86 Ball-shaped electrode 9 Wafer ring 10 Semiconductor film 100 Semiconductor device

Claims (7)

An adhesive layer, at least one adhesive layer and a support film are laminated in this order, and a semiconductor wafer is laminated on the surface of the adhesive layer opposite to the adhesive layer, and in this state, the semiconductor wafer and the adhesive film are laminated. It is a film for a semiconductor that is used when picking up individual pieces obtained by cutting the layers into pieces,
When the adhesive layer is heated at 130 ° C., the initial melt viscosity of the adhesive layer is 100 Pa · s or less,
When the adhesive layer is heated at 130 ° C. for 30 minutes, the melt viscosity of the adhesive layer is 1,000 Pa · s or more,
A film for semiconductor, wherein an elastic modulus at 175 ° C. of the adhesive layer after heating the adhesive layer at 130 ° C. for 30 minutes is 1 MPa or more.   The said adhesive layer is a film for semiconductors of Claim 1 comprised with the resin composition containing a thermoplastic resin, a thermosetting resin, and a curing catalyst.   The film for semiconductor according to claim 2, wherein the content of the curing catalyst is 0.01 to 30 parts by mass with respect to 100 parts by mass of the thermoplastic resin.   The film for a semiconductor according to claim 2, wherein the curing catalyst contains an imidazole compound.   The semiconductor film according to claim 2, wherein the thermoplastic resin is an acrylic resin.   The film for semiconductor according to claim 2, wherein the thermosetting resin is an epoxy resin and / or a phenol resin.   A semiconductor device, wherein the semiconductor element and the substrate or the semiconductor element and the semiconductor element are bonded using the semiconductor film according to claim 1.

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