JP2012079964A - Polishing liquid composition for semiconductor wafer - Google Patents
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- 238000005498 polishing Methods 0.000 title claims abstract description 133
- 239000000203 mixture Substances 0.000 title claims abstract description 99
- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 239000007788 liquid Substances 0.000 title claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 135
- 239000002202 Polyethylene glycol Substances 0.000 claims abstract description 49
- 229920001223 polyethylene glycol Polymers 0.000 claims abstract description 49
- 150000001875 compounds Chemical class 0.000 claims abstract description 41
- 239000002245 particle Substances 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000003513 alkali Substances 0.000 claims abstract description 19
- 239000011164 primary particle Substances 0.000 claims abstract description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000010191 image analysis Methods 0.000 claims abstract description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- 238000001179 sorption measurement Methods 0.000 claims abstract description 8
- 235000012431 wafers Nutrition 0.000 claims description 81
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 claims description 33
- 239000004354 Hydroxyethyl cellulose Substances 0.000 claims description 33
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 claims description 33
- 229920002678 cellulose Polymers 0.000 claims description 14
- 239000001913 cellulose Substances 0.000 claims description 14
- 229920003169 water-soluble polymer Polymers 0.000 claims description 13
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 10
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 10
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 claims description 9
- 238000003917 TEM image Methods 0.000 claims description 9
- 229910052783 alkali metal Inorganic materials 0.000 claims description 9
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 8
- 150000001340 alkali metals Chemical class 0.000 claims description 8
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 claims description 8
- 150000003863 ammonium salts Chemical class 0.000 claims description 7
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 claims description 6
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims description 6
- 239000001099 ammonium carbonate Substances 0.000 claims description 6
- 229910017053 inorganic salt Inorganic materials 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 4
- 239000000908 ammonium hydroxide Substances 0.000 claims description 4
- 229910000027 potassium carbonate Inorganic materials 0.000 claims description 4
- 235000011181 potassium carbonates Nutrition 0.000 claims description 4
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 4
- LNAZSHAWQACDHT-XIYTZBAFSA-N (2r,3r,4s,5r,6s)-4,5-dimethoxy-2-(methoxymethyl)-3-[(2s,3r,4s,5r,6r)-3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6r)-4,5,6-trimethoxy-2-(methoxymethyl)oxan-3-yl]oxyoxane Chemical compound CO[C@@H]1[C@@H](OC)[C@H](OC)[C@@H](COC)O[C@H]1O[C@H]1[C@H](OC)[C@@H](OC)[C@H](O[C@H]2[C@@H]([C@@H](OC)[C@H](OC)O[C@@H]2COC)OC)O[C@@H]1COC LNAZSHAWQACDHT-XIYTZBAFSA-N 0.000 claims description 3
- 229910000013 Ammonium bicarbonate Inorganic materials 0.000 claims description 3
- 229920002134 Carboxymethyl cellulose Polymers 0.000 claims description 3
- 229920000896 Ethulose Polymers 0.000 claims description 3
- 239000001856 Ethyl cellulose Substances 0.000 claims description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 3
- 239000001859 Ethyl hydroxyethyl cellulose Substances 0.000 claims description 3
- 229920001479 Hydroxyethyl methyl cellulose Polymers 0.000 claims description 3
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 claims description 3
- OKIZCWYLBDKLSU-UHFFFAOYSA-M N,N,N-Trimethylmethanaminium chloride Chemical compound [Cl-].C[N+](C)(C)C OKIZCWYLBDKLSU-UHFFFAOYSA-M 0.000 claims description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 3
- 235000012538 ammonium bicarbonate Nutrition 0.000 claims description 3
- 235000012501 ammonium carbonate Nutrition 0.000 claims description 3
- 239000001768 carboxy methyl cellulose Substances 0.000 claims description 3
- 235000010948 carboxy methyl cellulose Nutrition 0.000 claims description 3
- 239000008112 carboxymethyl-cellulose Substances 0.000 claims description 3
- 229920001249 ethyl cellulose Polymers 0.000 claims description 3
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 3
- 235000019326 ethyl hydroxyethyl cellulose Nutrition 0.000 claims description 3
- 239000001863 hydroxypropyl cellulose Substances 0.000 claims description 3
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 claims description 3
- 239000001866 hydroxypropyl methyl cellulose Substances 0.000 claims description 3
- 229920003088 hydroxypropyl methyl cellulose Polymers 0.000 claims description 3
- 235000010979 hydroxypropyl methyl cellulose Nutrition 0.000 claims description 3
- UFVKGYZPFZQRLF-UHFFFAOYSA-N hydroxypropyl methyl cellulose Chemical compound OC1C(O)C(OC)OC(CO)C1OC1C(O)C(O)C(OC2C(C(O)C(OC3C(C(O)C(O)C(CO)O3)O)C(CO)O2)O)C(CO)O1 UFVKGYZPFZQRLF-UHFFFAOYSA-N 0.000 claims description 3
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 claims description 3
- 229910052808 lithium carbonate Inorganic materials 0.000 claims description 3
- 229910000032 lithium hydrogen carbonate Inorganic materials 0.000 claims description 3
- HQRPHMAXFVUBJX-UHFFFAOYSA-M lithium;hydrogen carbonate Chemical compound [Li+].OC([O-])=O HQRPHMAXFVUBJX-UHFFFAOYSA-M 0.000 claims description 3
- 229920000609 methyl cellulose Polymers 0.000 claims description 3
- 239000001923 methylcellulose Substances 0.000 claims description 3
- 235000010981 methylcellulose Nutrition 0.000 claims description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 3
- 229910000028 potassium bicarbonate Inorganic materials 0.000 claims description 3
- 235000015497 potassium bicarbonate Nutrition 0.000 claims description 3
- 239000011736 potassium bicarbonate Substances 0.000 claims description 3
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 claims description 3
- 229940086066 potassium hydrogencarbonate Drugs 0.000 claims description 3
- 229910000030 sodium bicarbonate Inorganic materials 0.000 claims description 3
- 235000017557 sodium bicarbonate Nutrition 0.000 claims description 3
- YMBCJWGVCUEGHA-UHFFFAOYSA-M tetraethylammonium chloride Chemical compound [Cl-].CC[N+](CC)(CC)CC YMBCJWGVCUEGHA-UHFFFAOYSA-M 0.000 claims description 3
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 3
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 238000007517 polishing process Methods 0.000 abstract description 4
- 229920000642 polymer Polymers 0.000 abstract 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 42
- 239000000377 silicon dioxide Substances 0.000 description 38
- 229910021529 ammonia Inorganic materials 0.000 description 21
- 239000000243 solution Substances 0.000 description 17
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 12
- -1 alkyl silicate Chemical compound 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 8
- 238000011101 absolute filtration Methods 0.000 description 7
- 239000011362 coarse particle Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 238000001471 micro-filtration Methods 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000008119 colloidal silica Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229920000742 Cotton Polymers 0.000 description 3
- 239000004677 Nylon Substances 0.000 description 3
- 239000004695 Polyether sulfone Substances 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 3
- 239000004115 Sodium Silicate Substances 0.000 description 3
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000012510 hollow fiber Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229920001778 nylon Polymers 0.000 description 3
- 229920002492 poly(sulfone) Polymers 0.000 description 3
- 229920006393 polyether sulfone Polymers 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- 239000012429 reaction media Substances 0.000 description 3
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 3
- 229910052911 sodium silicate Inorganic materials 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003729 cation exchange resin Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- YWXYYJSYQOXTPL-SLPGGIOYSA-N isosorbide mononitrate Chemical compound [O-][N+](=O)O[C@@H]1CO[C@@H]2[C@@H](O)CO[C@@H]21 YWXYYJSYQOXTPL-SLPGGIOYSA-N 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- GSWAOPJLTADLTN-UHFFFAOYSA-N oxidanimine Chemical compound [O-][NH3+] GSWAOPJLTADLTN-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 235000010344 sodium nitrate Nutrition 0.000 description 1
- 239000004317 sodium nitrate Substances 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
本願発明は、半導体ウェーハ表面の鏡面研磨において、ＬＰＤの改善に好適な研磨液組成物に関する。 The present invention relates to a polishing composition suitable for improving LPD in mirror polishing of the surface of a semiconductor wafer.
一般に半導体ウェーハの製造方法は、１）単結晶インゴットをスライスして薄円板状のウェーハを得るスライス工程と、２）該ウェーハの外周部を面取りする面取り工程と、３）面取りしたウェーハを平坦化するラッピング工程と、４）ラッピングしたウェーハの加工歪みを除去するエッチング工程と、５）エッチングされたウェーハの表面を鏡面化する研磨工程と、６）研磨されたウェーハを洗浄する洗浄工程から構成されている。 In general, a method for manufacturing a semiconductor wafer includes 1) a slicing step for slicing a single crystal ingot to obtain a thin disk-shaped wafer, 2) a chamfering step for chamfering the outer periphery of the wafer, and 3) flattening the chamfered wafer. 4) an etching process for removing processing distortion of the lapped wafer, 5) a polishing process for mirroring the surface of the etched wafer, and 6) a cleaning process for cleaning the polished wafer. Has been.
研磨工程は、研磨液組成物を研磨パッド表面に供給しながら、被研磨物である半導体ウェーハを研磨パッドに圧接し相対移動させることにより行われる。その研磨工程は、１次研磨、２次研磨、最終研磨の複数段階からなるのが一般的である。１次研磨及び２次研磨は、ラッピングやエッチング工程で生じたウェーハ表面の深い傷を除去することを目的として行なわれるのに対して、最終研磨は１次研磨及び２次研磨後に残存した微小な表面欠陥を除去し、高精度に平坦化することを目的として行なわれる。最終研磨後の半導体ウェーハの品質の評価基準としては、一般的にＬＰＤ（Ｌｉｇｈｔ Ｐｏｉｎｔ Ｄｅｆｅｃｔ）、ヘイズレベル（表面曇りの程度）が用いられている。 The polishing process is performed by pressing and relatively moving a semiconductor wafer as an object to be polished against the polishing pad while supplying the polishing composition to the surface of the polishing pad. The polishing process generally comprises a plurality of stages of primary polishing, secondary polishing, and final polishing. The primary polishing and the secondary polishing are performed for the purpose of removing deep flaws on the wafer surface caused by the lapping or etching process, whereas the final polishing is a minute amount remaining after the primary polishing and the secondary polishing. It is performed for the purpose of removing surface defects and flattening with high accuracy. As an evaluation standard for the quality of the semiconductor wafer after final polishing, generally, LPD (Light Point Defect) and haze level (degree of surface haze) are used.
ＬＰＤとは、鏡面状態をなす半導体ウェーハに強い光を照射した際に、乱反射を引き起こす微小な表面欠陥のことであり、研磨時に粗大な砥粒や異物によって引き起こされる引っ掻き傷や砥粒、異物等の付着物、若しくは砥粒、異物等の付着によって引き起こされる加工変質層が起因している。 LPD is a minute surface defect that causes diffuse reflection when a semiconductor wafer in a mirror state is irradiated with strong light. Scratches, abrasive grains, foreign matter, etc. caused by coarse abrasive grains or foreign matters during polishing This is caused by a work-affected layer that is caused by the adhesion of an adhesive, abrasive grains, foreign matter or the like.
一方ヘイズレベルとは、鏡面状態をなす半導体ウェーハに強い光を照射した際に、その反射光に表れる曇りの度合いのことである。平坦性の高い半導体ウェーハ程、乱反射が少なく、ヘイズレベルは良好である。ＬＰＤの個数やヘイズレベルの値の小さい方がより高品質なウェーハであるといえる。 On the other hand, the haze level is the degree of cloudiness that appears in the reflected light when a semiconductor wafer in a mirror state is irradiated with strong light. A semiconductor wafer with higher flatness has less irregular reflection and a better haze level. The smaller the number of LPDs and the haze level, the higher the quality of the wafer.
ＬＰＤやヘイズレベルを改善する目的で行われる最終研磨工程においては、水中に分散したシリカ粒子にアルカリ化合物を添加し、さらに水溶性高分子化合物を加えた研磨液組成物を用いるのが一般的である。応力緩和能をもつ水溶性高分子化合物は、砥粒や異物によるダメージを低下させるだけでなく、半導体ウェーハ表面に親水性を付与し、砥粒や異物の付着を防止する効果がある。また、半導体ウェーハ界面の濡れ性を向上させるアルコール性水酸基を有する化合物を添加することで、引っ掻き傷の低減及び付着防止の効果をより向上させ、高精度な平坦化を実現することが可能となる。
一方、近年半導体ウェーハにデザインされる配線幅の微細化が進んでいるため、半導体ウェーハのＬＰＤ及びヘイズレベルに対する要求は更に高くなっている。特にＬＰＤは、表面欠陥検査装置の急速な進歩により５０ｎｍ以下のレベルまで観察されるようになり、そこで顕在化した数十ｎｍレベルの欠陥の抑制については、従来の研磨液組成物では十分な効果が得られていない。
In the final polishing step performed for the purpose of improving LPD and haze level, it is common to use a polishing liquid composition in which an alkali compound is added to silica particles dispersed in water and a water-soluble polymer compound is further added. is there. The water-soluble polymer compound having stress relaxation ability not only reduces damage caused by abrasive grains and foreign substances, but also has an effect of imparting hydrophilicity to the surface of the semiconductor wafer and preventing adhesion of abrasive grains and foreign substances. In addition, by adding a compound having an alcoholic hydroxyl group that improves the wettability of the semiconductor wafer interface, it is possible to further improve the effect of reducing scratches and preventing adhesion and realizing high-precision flattening. .
On the other hand, as the wiring width designed for semiconductor wafers has been miniaturized in recent years, the demands on the LPD and haze level of the semiconductor wafer are further increased. In particular, LPD has been observed to a level of 50 nm or less due to rapid progress of surface defect inspection apparatuses, and the conventional polishing liquid composition has a sufficient effect for suppressing defects of a few tens of nm level that have been manifested there. Is not obtained.
特許文献１には、ヒドロキシエチルセルロース、０．００５質量％を超えるとともに０．５質量％未満のポリエチレンオキサイド、アルカリ化合物、水、二酸化ケイ素が含有される研磨液組成物が開示されている。しかしながら、５０ｎｍ以下のＬＰＤの低減に効果があるかどうかは示されていない。 Patent Document 1 discloses a polishing composition containing hydroxyethyl cellulose, greater than 0.005% by mass and less than 0.5% by mass of polyethylene oxide, an alkali compound, water, and silicon dioxide. However, it is not shown whether it is effective in reducing LPD of 50 nm or less.
特許文献２には、球状で表面の平滑性が高く、また粒子径分布が狭く、実質的に粗大粒子を含まない改質されたシリカ系微粒子を研磨用組成物の成分として用いると、研磨速度、被研磨基材の表面粗さ及び被研磨基材の線状痕発生抑止においてバランスのとれた性能を示すとの開示がある。しかしながら、どの程度ＬＰＤの低減に効果があるかどうかは不明である。 Patent Document 2 discloses that when modified silica-based fine particles that are spherical and have high surface smoothness, a narrow particle size distribution, and substantially no coarse particles are used as components of the polishing composition, Further, there is a disclosure that a balanced performance is exhibited in the surface roughness of the substrate to be polished and the suppression of the occurrence of linear marks on the substrate to be polished. However, it is unclear how much LPD is effective.
本願発明は、半導体ウェーハの研磨において、ウェーハ表面の５０ｎｍ以下の大きさのＬＰＤを効果的に低減可能な研磨液組成物の提供を課題とする。 This invention makes it a subject to provide the polishing liquid composition which can reduce effectively the LPD of the magnitude | size of 50 nm or less of a wafer surface in grinding | polishing of a semiconductor wafer.
本願発明の半導体ウェーハ用研磨液組成物は、第１観点として、水、シリカ粒子、アルカリ化合物、水溶性高分子化合物及びポリエチレングリコールを含み、下記（ａ）〜（ｃ）の条件を満たす半導体ウェーハ用研磨液組成物、
（ａ）：前記シリカ粒子の、下記式（１）で表される形状係数ＳＦ１が１．００〜１．２０であること
（１） ＳＦ１＝（ＤL 2×π／４）／Ｓ
（但し、ＤLは、透過型電子顕微鏡写真から求められるシリカ粒子の最大長（ｎｍ）であり、Ｓは、シリカ粒子の投影面積（ｎｍ2）である。）
（ｂ）：前記シリカ粒子の窒素吸着法により求められる平均一次粒子径が５〜１００ｎｍであって、且つ透過型電子顕微鏡写真の画像解析から求められる粒子径変動係数ＣＶ値が０〜１５％の範囲であること
（ｃ）：前記ポリエチレングリコールの数平均分子量が２００〜１５０００であること
第２観点として、前記アルカリ化合物は、アルカリ金属の無機塩及び／又はアンモニウム塩である第１観点に記載の半導体ウェーハ用研磨液組成物、
第３観点として、前記アルカリ金属の無機塩は、水酸化リチウム、水酸化ナトリウム、水酸化カリウム、炭酸リチウム、炭酸ナトリウム、炭酸カリウム、炭酸水素リチウム、炭酸水素ナトリウム及び炭酸水素カリウムからなる群から選ばれる少なくとも１種類である第２観点に記載の半導体ウェーハ用研磨液組成物、
第４観点として、前記アンモニウム塩は、水酸化アンモニウム、炭酸アンモニウム、炭酸水素アンモニウム、水酸化テトラメチルアンモニウム、水酸化テトラエチルアンモニウム、塩化テトラメチルアンモニウム及び塩化テトラエチルアンモニウムからなる群から選ばれる少なくとも１種類である第２観点に記載の半導体ウェーハ用研磨液組成物、
第５観点として、前記水溶性高分子化合物は、セルロース誘導体及びポリビニルアルコールからなる群から選ばれる化合物の少なくとも１種類である第１観点に記載の半導体ウェーハ用研磨液組成物、
第６観点として、前記セルロース誘導体は、カルボキシメチルセルロース、ヒドロキシエチルセルロース、ヒドロキシエチルメチルセルロース、ヒドロキシプロピルセルロース、ヒドロキシプロピルメチルセルロース、メチルセルロース、エチルセルロース、エチルヒドロキシエチルセルロース、及びカルボキシメチルエチルセルロースからなる群より選ばれる化合物の少なくとも１種類である第５観点に記載の半導体ウェーハ用研磨液組成物、
第７観点として、前記セルロース誘導体は、１０００００〜３００００００のポリエチレンオキシド換算の重量平均分子量を有するヒドロキシエチルセルロースである第５観点に記載の半導体ウェーハ用研磨液組成物、
第８観点として、前記シリカ粒子の含有量は、半導体ウェーハ用研磨液組成物の全質量を基準にして０．００５〜５０質量％である第１観点〜第７観点のいずれか一つに記載の半導体ウェーハ用研磨液組成物、
第９観点として、前記アルカリ化合物の含有量は、半導体ウェーハ用研磨液組成物の全質量を基準にして０．００１〜３０質量％である第１観点〜第８観点のいずれか一つに記載の半導体ウェーハ用研磨液組成物、
第１０観点として、前記水溶性高分子化合物の含有量は、半導体ウェーハ用研磨液組成物の全質量を基準にして０．０１〜２．０質量％である第１観点〜第９観点のいずれか一つに記載の半導体ウェーハ用研磨液組成物、
第１１観点として、前記ポリエチレングリコールの含有量は、半導体ウェーハ用研磨液組成物の全質量を基準にして０．０１〜０．５質量％である第１観点〜第１０観点のいずれか一つに記載の半導体ウェーハ用研磨液組成物である。
The semiconductor wafer polishing liquid composition of the present invention comprises, as a first aspect, a semiconductor wafer containing water, silica particles, an alkali compound, a water-soluble polymer compound and polyethylene glycol, and satisfying the following conditions (a) to (c): Polishing liquid composition,
(A): The shape factor SF1 represented by the following formula (1) of the silica particles is 1.00 to 1.20. (1) SF1 = (D L 2 × π / 4) / S
(However, D L is the maximum length (nm) of the silica particles determined from the transmission electron micrograph, and S is the projected area (nm 2 ) of the silica particles.)
(B): The average primary particle diameter calculated | required by the nitrogen adsorption method of the said silica particle is 5-100 nm, and the particle diameter variation coefficient CV value calculated | required from the image analysis of a transmission electron micrograph is 0-15%. It is a range (c): The polyethylene glycol has a number average molecular weight of 200 to 15000. As a second aspect, the alkali compound is an inorganic salt and / or ammonium salt of an alkali metal as described in the first aspect. Polishing liquid composition for semiconductor wafers,
As a third aspect, the alkali metal inorganic salt is selected from the group consisting of lithium hydroxide, sodium hydroxide, potassium hydroxide, lithium carbonate, sodium carbonate, potassium carbonate, lithium hydrogen carbonate, sodium hydrogen carbonate and potassium hydrogen carbonate. A polishing composition for a semiconductor wafer according to the second aspect, which is at least one kind of
As a fourth aspect, the ammonium salt is at least one selected from the group consisting of ammonium hydroxide, ammonium carbonate, ammonium hydrogen carbonate, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetramethylammonium chloride, and tetraethylammonium chloride. A polishing composition for a semiconductor wafer according to a second aspect,
As a fifth aspect, the water-soluble polymer compound is a polishing liquid composition for semiconductor wafers according to the first aspect, which is at least one compound selected from the group consisting of cellulose derivatives and polyvinyl alcohol,
As a sixth aspect, the cellulose derivative is at least one compound selected from the group consisting of carboxymethylcellulose, hydroxyethylcellulose, hydroxyethylmethylcellulose, hydroxypropylcellulose, hydroxypropylmethylcellulose, methylcellulose, ethylcellulose, ethylhydroxyethylcellulose, and carboxymethylethylcellulose. The polishing composition for a semiconductor wafer according to the fifth aspect, which is a type,
As a seventh aspect, the cellulose derivative is a polishing composition for a semiconductor wafer according to the fifth aspect, which is hydroxyethyl cellulose having a weight average molecular weight in terms of polyethylene oxide of 100,000 to 3000000,
As an 8th viewpoint, content of the said silica particle is 0.005-50 mass% on the basis of the total mass of the polishing liquid composition for semiconductor wafers, It is described in any one of the 1st viewpoint-the 7th viewpoint. A polishing composition for semiconductor wafers,
As 9th viewpoint, content of the said alkali compound is 0.001-30 mass% on the basis of the total mass of the polishing liquid composition for semiconductor wafers, It is described in any one of the 1st viewpoint-8th viewpoint. A polishing composition for semiconductor wafers,
As a tenth aspect, the content of the water-soluble polymer compound is 0.01 to 2.0% by mass based on the total mass of the polishing composition for a semiconductor wafer, any of the first to ninth aspects. The polishing composition for a semiconductor wafer according to any one of the above,
As an 11th viewpoint, content of the said polyethylene glycol is any one of the 1st viewpoint-the 10th viewpoint which is 0.01-0.5 mass% on the basis of the total mass of the polishing liquid composition for semiconductor wafers. It is a polishing liquid composition for semiconductor wafers of description.
本願発明によれば、形状が真球状であり、且つ粒度分布が均一に制御されたシリカ粒子と特定の分子量のポリエチレングリコールとを組み合わせて用いることにより、半導体ウェーハ表面へのダメージを低減でき、砥粒や異物の付着を防止できるため、５０ｎｍ以下のＬＰＤが低減された半導体ウェーハを提供することができる。 According to the present invention, it is possible to reduce damage to the surface of the semiconductor wafer by using a combination of silica particles having a spherical shape and a uniform particle size distribution and polyethylene glycol having a specific molecular weight, and grinding. Since adhesion of grains and foreign matters can be prevented, a semiconductor wafer with reduced LPD of 50 nm or less can be provided.
本願発明の半導体ウェーハ用研磨液組成物は、水とシリカ粒子とアルカリ化合物と水溶性高分子化合物とポリエチレングリコールとを含むものである。 The polishing liquid composition for a semiconductor wafer of the present invention contains water, silica particles, an alkali compound, a water-soluble polymer compound, and polyethylene glycol.
前記シリカ粒子は、下記式（１）で表される形状係数ＳＦ１が１．００〜１．２０である。
（１） ＳＦ１＝（ＤL 2×π／４）／Ｓ
（但し、ＤLは、透過型電子顕微鏡写真から求められるシリカ粒子の最大長（ｎｍ）であり、Ｓは、シリカ粒子の投影面積（ｎｍ2）である。）
前記式（１）において、ＤLは透過型電子顕微鏡（ＴＥＭ）写真の画像解析から求められるシリカ粒子の最大長（画像の周上の任意の２点間のうち最大の長さ）であり、Ｓは透過型電子顕微鏡写真の画像解析から求められるシリカ粒子の投影面積である。
The silica particles have a shape factor SF1 represented by the following formula (1) of 1.00 to 1.20.
(1) SF1 = (D L 2 × π / 4) / S
(However, D L is the maximum length (nm) of the silica particles determined from the transmission electron micrograph, and S is the projected area (nm 2 ) of the silica particles.)
In the above formula (1), D L is the maximum length of silica particles (the maximum length between any two points on the circumference of the image) obtained from image analysis of a transmission electron microscope (TEM) photograph, S is the projected area of the silica particles obtained from image analysis of a transmission electron micrograph.
ＳＦ１は、１．００に近づく程真球状に近い形状であることを表す。ＳＦ１の値を上記の範囲内にすることで、半導体ウェーハ上の欠陥やダメージを低減することが可能となる。本願発明においてウェーハ表面のＬＰＤをより低減するには、ＳＦ１は１．００〜１．１８の範囲にあることがより好ましく、１．００〜１．１５の範囲であることが最も好ましい。 SF1 represents a shape close to a true sphere as it approaches 1.00. By setting the value of SF1 within the above range, defects and damage on the semiconductor wafer can be reduced. In the present invention, in order to further reduce the LPD on the wafer surface, SF1 is more preferably in the range of 1.00 to 1.18, and most preferably in the range of 1.00 to 1.15.
前記シリカ粒子は、窒素吸着法から求められる一次粒子径が５〜１００ｎｍである。５ｎｍより小さいと研磨速度が低くなり、また粒子の凝集が起こりやすく、研磨液組成物の安定性が低くなる。また１００ｎｍより大きいと半導体ウェーハ表面にスクラッチが発生しやすく、また研磨面の平坦性は悪くなる。 The silica particles have a primary particle size of 5 to 100 nm determined from a nitrogen adsorption method. When the thickness is smaller than 5 nm, the polishing rate is low, the particles are likely to be aggregated, and the stability of the polishing composition is lowered. On the other hand, if it is larger than 100 nm, scratches are likely to be generated on the surface of the semiconductor wafer, and the flatness of the polished surface is deteriorated.
本願発明において、研磨速度を低下させず、粒子形状の効果を発揮させて半導体ウェーハ表面のＬＰＤをより低減するには、用いるシリカ粒子の一次粒子径は１０〜７０ｎｍの範囲であることが好ましく、２０〜５０ｎｍの範囲であることがより好ましい。 In the present invention, the primary particle diameter of the silica particles used is preferably in the range of 10 to 70 nm in order to further reduce the LPD of the semiconductor wafer surface by exhibiting the effect of the particle shape without reducing the polishing rate, A range of 20 to 50 nm is more preferable.
前記シリカ粒子は、下記式（２）で表される粒子径変動係数ＣＶ値が０〜１５％である。
（２） ＣＶ値（％）＝σ／ＤA×１００
（但し、σは粒子径標準偏差であり、ＤAは平均粒子径である。）
前記式（２）において、σ及びＤAは透過型電子顕微鏡写真の画像解析から求められる。シリカ粒子の透過型電子顕微鏡写真における任意の１０００個の粒子について、画像解析装置（例えば株式会社ニレコ製：ＬＵＺＥＸ ＡＰ）を用いてそれぞれ粒子径を求め、その値からＤA（ｎｍ）、σを算出したものである。ＣＶ値は、０％に近づく程分布が均一である。
The silica particles have a particle diameter variation coefficient CV value represented by the following formula (2) of 0 to 15%.
(2) CV value (%) = σ / D A × 100
(However, σ is the particle size standard deviation, and D A is the average particle size.)
In the formula (2), σ and D A are obtained from image analysis of a transmission electron micrograph. For any 1000 particles in a transmission electron micrograph of silica particles, the particle size is determined using an image analyzer (for example, LUZEX AP manufactured by Nireco Co., Ltd.), and D A (nm) and σ are calculated from these values. It is calculated. The CV value has a more uniform distribution as it approaches 0%.
本願発明において、半導体ウェーハ表面のＬＰＤをより低減するにはＣＶ値は１０％以下であることが好ましく、７％以下であることがより好ましい。 In the present invention, in order to further reduce the LPD on the surface of the semiconductor wafer, the CV value is preferably 10% or less, and more preferably 7% or less.
前記シリカ粒子はコロイダルシリカであり、ケイ酸アルカリ水溶液又はアルキルシリケートを原料として製造されるものが好適である。 The silica particles are colloidal silica, and those manufactured using an alkali silicate aqueous solution or an alkyl silicate as a raw material are suitable.
前記シリカ粒子の製法としては、ケイ酸アルカリ水溶液を原料とした場合には、ケイ酸アルカリ水溶液から脱アルカリして得られるケイ酸水溶液又はケイ酸水溶液に少量のアルカリ化合物を添加して得られる安定化ケイ酸水溶液を、ヒール液に添加する製法が好ましい。その際、用いられるヒール液の成分としては、水とアルカリ化合物と一次粒子径３〜２５ｎｍの核となるコロイダルシリカ粒子、又は水とアルカリ化合物からなる。 As a method for producing the silica particles, when an aqueous alkali silicate solution is used as a raw material, a stable aqueous solution obtained by adding a small amount of an alkaline compound to an aqueous silicic acid solution or an aqueous silicic acid solution obtained by dealkalization from the aqueous alkali silicate solution A production method in which an aqueous silicic acid solution is added to the heel solution is preferred. At that time, the components of the heel liquid used include water and an alkali compound and colloidal silica particles serving as a nucleus having a primary particle diameter of 3 to 25 nm, or water and an alkali compound.
前記シリカ粒子の粒子成長反応において、反応温度は９０〜１５０℃が好ましい。また、ヒール液のＳｉＯ2／Ｍ2Ｏ（Ｍはアルカリ金属）モル比は０〜４０が好ましい。また、前記ケイ酸水溶液又は安定化ケイ酸水溶液の添加速度は、反応媒体のＳｉＯ2／Ｍ2Ｏ（Ｍはアルカリ金属）モル比が１分間に０．０１〜０．５上昇するように設定することが好ましい。 In the particle growth reaction of the silica particles, the reaction temperature is preferably 90 to 150 ° C. Further, the SiO 2 / M 2 O (M is alkali metal) molar ratio of the heel liquid is preferably 0 to 40. Further, the addition rate of the aqueous silicic acid solution or the stabilized aqueous silicic acid solution is set so that the SiO 2 / M 2 O (M is alkali metal) molar ratio of the reaction medium is increased by 0.01 to 0.5 per minute. It is preferable to do.
前記シリカ粒子の製法としては、アルキルシリケートを原料とした場合には、前記ヒール液にアルキルシリケートを添加する製法が好ましい。その際、ヒール液の成分としては水とアルカリ化合物と一次粒子径３〜２５ｎｍの核となるコロイダルシリカ粒子、又は水とアルカリ化合物からなる。 As a method for producing the silica particles, when alkyl silicate is used as a raw material, a method of adding alkyl silicate to the heel solution is preferable. At that time, the components of the heel liquid are composed of water and an alkali compound and colloidal silica particles serving as a nucleus having a primary particle diameter of 3 to 25 nm, or water and an alkali compound.
前記シリカ粒子の粒子成長反応において、反応温度は４５℃以上、反応媒体の沸点以下が好ましい。また、ヒール液のアルカリ化合物の濃度として、ヒール液１リットル当たり０．００２〜０．１モル、水の濃度はヒール液１リットル当たり３０モル以上が好ましい。添加するアルキルシリケートの量としては、ヒール液中のアルカリ化合物１モルに対してＳｉ原子として７〜８０モルが好ましい。アルキルシリケートの添加速度は、反応媒体のＳｉＯ2／Ｍ’ＯＨ（Ｍ’ＯＨはアルカリ金属水酸化物又はアンモニウム水酸化物）モル比が１分間に０．１〜１．０上昇するように設定することが好ましい。 In the particle growth reaction of the silica particles, the reaction temperature is preferably 45 ° C. or higher and the boiling point of the reaction medium or lower. The concentration of the alkali compound in the heel liquid is preferably 0.002 to 0.1 mol per liter of heel liquid, and the water concentration is preferably 30 mol or more per liter of heel liquid. The amount of the alkyl silicate to be added is preferably 7 to 80 mol as Si atoms with respect to 1 mol of the alkali compound in the heel solution. The addition rate of the alkyl silicate is set so that the SiO 2 / M′OH (M′OH is alkali metal hydroxide or ammonium hydroxide) molar ratio of the reaction medium is increased by 0.1 to 1.0 per minute. It is preferable to do.
前記シリカ粒子は、上記の製法によって得られるコロイダルシリカをＳｉＯ2濃度１０〜３０質量％に調整し、温度１２０〜３００℃で２〜２０時間程度の水熱処理を行ったものを使用することもできる。 As the silica particles, colloidal silica obtained by the above production method is adjusted to a SiO 2 concentration of 10 to 30% by mass and hydrothermally treated at a temperature of 120 to 300 ° C. for about 2 to 20 hours can be used. .
前記シリカ粒子に０．５μｍ以上の粗大粒子が含まれている場合には、その粗大粒子を除去することが必要である。粗大粒子の除去工程には、強制沈降法や精密ろ過法が挙げられる。精密ろ過に使用するフィルターには、デプスフィルター、プリーツフィルター、メンブレンフィルター、中空糸フィルターなどがあり、いずれも使用することが出来る。また、フィルターの材質にはコットン、ポリプロピレン、ポリスチレン、ポリサルフォン、ポリエーテルサルフォン、ナイロン、セルロース、ガラスなどがあるが、いずれも使用することが出来る。フィルターのろ過精度は絶対ろ過精度（９９．９％以上補足される粒子の大きさ）で表されるが、前記シリカ粒子においては、生産効率（処理時間やフィルターの目詰まりなど）の観点から、絶対ろ過精度０．５μｍ〜１．０μｍのフィルターで処理することが好ましい。 When the silica particles contain coarse particles of 0.5 μm or more, it is necessary to remove the coarse particles. Examples of the coarse particle removing step include forced sedimentation and microfiltration. Filters used for microfiltration include depth filters, pleated filters, membrane filters, and hollow fiber filters, all of which can be used. Filter materials include cotton, polypropylene, polystyrene, polysulfone, polyethersulfone, nylon, cellulose, glass, etc., any of which can be used. The filtration accuracy of the filter is expressed by absolute filtration accuracy (size of particles supplemented by 99.9% or more), but in the silica particles, from the viewpoint of production efficiency (processing time, filter clogging, etc.), It is preferable to process with a filter having an absolute filtration accuracy of 0.5 μm to 1.0 μm.
前記シリカ粒子の含有量は、研磨液組成物全量の質量に対して、一般的には０．０５〜５０質量％、好ましくは０．１〜２０質量％、更に好ましくは５〜１０質量％である。０．０５質量％以下では研磨性能が十分に発揮できず、５０質量％以上では研磨液組成物の安定性が悪くなる。 The content of the silica particles is generally 0.05 to 50% by mass, preferably 0.1 to 20% by mass, and more preferably 5 to 10% by mass with respect to the total mass of the polishing composition. is there. If it is 0.05 mass% or less, polishing performance cannot fully be exhibited, and if it is 50 mass% or more, the stability of the polishing composition becomes poor.
前記アルカリ化合物は、アルカリ金属の無機塩及び／又はアンモニウム塩である。前記アルカリ金属の無機塩は、水酸化リチウム、水酸化ナトリウム、水酸化カリウム、炭酸リチウム、炭酸ナトリウム、炭酸カリウム、炭酸水素リチウム、炭酸水素ナトリウム及び炭酸水素カリウムからなる群から選ばれる少なくとも１種類であり、特に水酸化ナトリウム、水酸化カリウム、炭酸ナトリウム、炭酸カリウムが好ましい。 The alkali compound is an alkali metal inorganic salt and / or an ammonium salt. The alkali metal inorganic salt is at least one selected from the group consisting of lithium hydroxide, sodium hydroxide, potassium hydroxide, lithium carbonate, sodium carbonate, potassium carbonate, lithium hydrogen carbonate, sodium hydrogen carbonate and potassium hydrogen carbonate. In particular, sodium hydroxide, potassium hydroxide, sodium carbonate, and potassium carbonate are preferable.
前記アンモニウム塩は、水酸化アンモニム、炭酸アンモニウム、炭酸水素アンモニウム、水酸化テトラメチルアンモニウム、水酸化テトラエチルアンモニウム、塩化テトラメチルアンモニウム及び塩化テトラエチルアンモニウムからなる群から選ばれる少なくとも１種類であり、その中でも水酸化アンモニウムが好ましい。 The ammonium salt is at least one selected from the group consisting of ammonium hydroxide, ammonium carbonate, ammonium hydrogen carbonate, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetramethylammonium chloride, and tetraethylammonium chloride. Ammonium oxide is preferred.
前記アルカリ化合物の好ましい添加量は、使用する物質によって異なるが、一般的には研磨液組成物全体の質量に対して０．０１〜３０質量％である。特に、加工促進剤がアルカリ金属塩である場合は０．０１〜１．０質量％、アンモニウム塩である場合は０．０１〜５質量％が好ましい。０．０１質量％未満の添加では、加工促進剤としての作用が十分ではなく、逆に３０質量％以上の添加を行ったとしても、研磨性能の更なる向上は期待でない。また、上記に示すアルカリ化合物のうち、２種以上を併用することも可能である。 Although the preferable addition amount of the said alkali compound changes with substances to be used, it is generally 0.01-30 mass% with respect to the mass of the whole polishing liquid composition. In particular, when the processing accelerator is an alkali metal salt, 0.01 to 1.0% by mass is preferable, and when the processing accelerator is an ammonium salt, 0.01 to 5% by mass is preferable. If the addition is less than 0.01% by mass, the effect as a processing accelerator is not sufficient. Conversely, even if addition of 30% by mass or more is performed, further improvement in polishing performance is not expected. Moreover, it is also possible to use 2 or more types together among the alkali compounds shown above.
前記水溶性高分子化合物は、セルロース誘導体及びポリビニルアルコールからなる群から選ばれる化合物の少なくとも１種類である。前記水溶性高分子化合物の重量平均分子量はＧＰＣ（ゲルパーミエーションクロマトグラフィー）を用いて測定され、ポリエチレンオキシド換算の重量平均分子量（Ｍｗ）として１０００００〜３００００００であり、好ましくは３０００００〜２５０００００であり、より好ましくは５０００００〜２００００００である。 The water-soluble polymer compound is at least one compound selected from the group consisting of cellulose derivatives and polyvinyl alcohol. The weight average molecular weight of the water-soluble polymer compound is measured using GPC (gel permeation chromatography), and is a weight average molecular weight (Mw) in terms of polyethylene oxide of 100,000 to 3,000,000, preferably 300,000 to 2,500,000. More preferably, it is 500,000 to 2,000,000.
前記セルロース誘導体は、カルボキシメチルセルロース、ヒドロキシエチルセルロース、ヒドロキシエチルメチルセルロース、ヒドロキシプロピルセルロース、ヒドロキシプロピルメチルセルロース、メチルセルロース、エチルセルロース、エチルヒドロキシエチルセルロース及びカルボキシメチルエチルセルロースからなる群より選ばれる化合物の少なくとも１種類であり、その中でもヒドロキシエチルセルロースがより好ましい。 The cellulose derivative is at least one compound selected from the group consisting of carboxymethylcellulose, hydroxyethylcellulose, hydroxyethylmethylcellulose, hydroxypropylcellulose, hydroxypropylmethylcellulose, methylcellulose, ethylcellulose, ethylhydroxyethylcellulose, and carboxymethylethylcellulose. Hydroxyethyl cellulose is more preferred.
前記セルロース誘導体の添加量は、研磨液組成物全量の質量に対して０．０１〜２．０質量％が好ましい。０．０１質量％未満の添加では、研磨後の半導体ウェーハ表面の濡れ性が不十分であり、一方２．０質量％以上の添加では、研磨用組成物の粘度が高くなり過ぎる。 The addition amount of the cellulose derivative is preferably 0.01 to 2.0% by mass with respect to the mass of the total amount of the polishing composition. If the addition is less than 0.01% by mass, the wettability of the surface of the semiconductor wafer after polishing is insufficient, whereas if the addition is 2.0% by mass or more, the viscosity of the polishing composition becomes too high.
前記セルロース誘導体にはミクロン〜サブミクロンの異物が含まれているので、その異物を除去することが好ましい。異物の除去工程には精密ろ過法が好適である。精密ろ過に使用するフィルターには、デプスフィルター、プリーツフィルター、メンブレンフィルター、中空糸フィルターなどがあり、いずれも使用することが出来る。また、フィルターの材質にはコットン、ポリプロピレン、ポリスチレン、ポリサルフォン、ポリエーテルサルフォン、ナイロン、セルロース、ガラスなどがあるが、いずれも使用することが出来る。フィルターのろ過精度は絶対ろ過精度（９９．９％以上補足される粒子の大きさ）で表されるが、前記セルロース誘導体においては、生産効率（処理時間やフィルターの目詰まりなど）の観点から、絶対ろ過精度０．５μｍ〜１．０μｍのフィルターで処理するのが好ましい。 Since the cellulose derivative contains foreign matter of micron to submicron, it is preferable to remove the foreign matter. A microfiltration method is suitable for the foreign substance removing step. Filters used for microfiltration include depth filters, pleated filters, membrane filters, and hollow fiber filters, all of which can be used. Filter materials include cotton, polypropylene, polystyrene, polysulfone, polyethersulfone, nylon, cellulose, glass, etc., any of which can be used. The filtration accuracy of the filter is expressed by absolute filtration accuracy (size of particles supplemented by 99.9% or more). In the cellulose derivative, from the viewpoint of production efficiency (processing time, filter clogging, etc.), It is preferable to process with a filter having an absolute filtration accuracy of 0.5 μm to 1.0 μm.
前記ポリエチレングリコールは、数平均分子量が２００〜１５０００である。半導体ウェーハ表面のＬＰＤをより低減するには、数平均分子量は１００００以下であることが好ましく、５０００以下であることがより好ましい。 The polyethylene glycol has a number average molecular weight of 200 to 15000. In order to further reduce the LPD on the semiconductor wafer surface, the number average molecular weight is preferably 10,000 or less, and more preferably 5000 or less.
前記ポリエチレングリコールの添加量としては、研磨液組成物全量の質量に対して０．０１〜０．５質量％である。ポリエチレングリコールの添加量が０．０１質量％未満では、ＬＰＤを改善することはできない。また０．５質量％を超えると濡れ性が高すぎるために滑りやすくなり、研磨パッドとウェーハ表面の抵抗が低くなるため、研磨速度が低下し、そのためＬＰＤが悪化する。半導体ウェーハ表面のＬＰＤをより低減するためには、ポリエチレングリコールの添加量は０．０２〜０．４質量％であることが好ましく、０．０３〜０．２質量％であることがより好ましい。 The addition amount of the polyethylene glycol is 0.01 to 0.5% by mass with respect to the mass of the total amount of the polishing composition. If the addition amount of polyethylene glycol is less than 0.01% by mass, LPD cannot be improved. On the other hand, when the content exceeds 0.5% by mass, the wettability is too high and slipping easily occurs, and the resistance between the polishing pad and the wafer surface is lowered, so that the polishing rate is lowered and LPD is deteriorated. In order to further reduce the LPD on the surface of the semiconductor wafer, the amount of polyethylene glycol added is preferably 0.02 to 0.4 mass%, more preferably 0.03 to 0.2 mass%.
本願発明の研磨液組成物は、高濃度の原液として調製して、貯蔵又は輸送を行い、研磨装置で使用する際に純水を加えて希釈して使用することもできる。希釈倍率は５〜１００倍、好ましくは１０〜５０倍である。 The polishing composition of the present invention can be prepared as a high-concentration stock solution, stored or transported, and diluted with pure water when used in a polishing apparatus. The dilution factor is 5 to 100 times, preferably 10 to 50 times.
本願発明の研磨液組成物を適用できる半導体ウェーハとは、シリコンウェーハ、ＳｉＣウェーハ、ＧａＮウェーハ、ＧａＡｓウェーハ、ＧａＰウェーハなどを示す。 The semiconductor wafer to which the polishing composition of the present invention can be applied refers to silicon wafers, SiC wafers, GaN wafers, GaAs wafers, GaP wafers and the like.
半導体ウェーハを研磨するときの研磨装置には、片面研磨方式と両面研磨方式があり、本願発明の研磨液組成物はいずれの装置にも用いることができる。 Polishing apparatuses for polishing a semiconductor wafer include a single-side polishing system and a double-side polishing system, and the polishing liquid composition of the present invention can be used in any apparatus.
本願発明の研磨液組成物に０．５μｍ以上の粗大粒子が含まれている場合には、研磨前に粗大粒子を除去することが必要である。粗大粒子の除去工程には、精密ろ過法が好適である。精密ろ過に使用するフィルターにはデプスフィルター、プリーツフィルター、メンブレンフィルター、中空糸フィルターなどがあり、いずれも使用することが出来る。また、フィルターの材質にはコットン、ポリプロピレン、ポリスチレン、ポリサルフォン、ポリエーテルサルフォン、ナイロン、セルロース、ガラスなどがあるが、いずれも使用することが出来る。フィルターのろ過精度は絶対ろ過精度（９９．９％以上補足される粒子の大きさ）で表されるが、本願発明の研磨液組成物においては、生産効率（処理時間やフィルターの目詰まりなど）の観点から、絶対ろ過精度０．５μｍ〜１．０μｍのフィルターで処理するのが好ましい。 When the polishing liquid composition of the present invention contains coarse particles of 0.5 μm or more, it is necessary to remove the coarse particles before polishing. A microfiltration method is suitable for the coarse particle removal step. Filters used for microfiltration include depth filters, pleated filters, membrane filters, hollow fiber filters, etc., any of which can be used. Filter materials include cotton, polypropylene, polystyrene, polysulfone, polyethersulfone, nylon, cellulose, glass, etc., any of which can be used. The filtration accuracy of the filter is expressed by absolute filtration accuracy (size of particles supplemented by 99.9% or more), but in the polishing composition of the present invention, production efficiency (processing time, filter clogging, etc.) In view of the above, it is preferable to treat with a filter having an absolute filtration accuracy of 0.5 μm to 1.0 μm.
[分析方法及び試験方法]
［１］ＳＦ１の測定方法、［２］ＣＶ値の測定方法、［３］窒素吸着法から求められる一次粒子径、［４］水溶性高分子化合物の分子量測定については特に断りのない限り、それぞれ次の分析方法［１］〜［４］に従って測定又は算定し、その結果を表１に示した。
［１］画像解析による形状係数ＳＦ１（粒子の真球度）の測定方法
透過型電子顕微鏡（日本電子株式会社製、ＪＥＭ−１０１０）により、試料のシリカ粒子を倍率２０万倍で写真撮影した。得られた写真投影図における任意の１０００個の粒子について、画像解析装置（株式会社ニレコ製：ＬＵＺＥＸ ＡＰ）を用いて、下記式（１）により形状係数ＳＦ１を算出した。
（１） ＳＦ１＝（ＤL 2×π／４）／Ｓ
（但し、ＤLは、透過型電子顕微鏡写真から求められるシリカ粒子の最大長（ｎｍ）であり、Ｓは、シリカ粒子の投影面積（ｎｍ2）である。）
［２］粒子径変動係数ＣＶ値（粒子径分布）の測定方法
透過型電子顕微鏡（日本電子株式会社製、ＪＥＭ−１０１０）により、試料のシリカ粒子を倍率２０万倍で写真撮影した。得られた写真投影図における任意の１０００個の粒子について、画像解析装置（株式会社ニレコ製：ＬＵＺＥＸ ＡＰ）を用いて、それぞれ粒子径を測定し、その値から平均粒子径及び粒子径の標準偏差を求め、下記式（２）から粒子径変動係数ＣＶ値を算定した。
（２） ＣＶ値（％）＝σ／ＤA×１００
（但し、σは粒子径標準偏差であり、ＤAは平均粒子径である。）
［３］窒素吸着法により求められるシリカ粒子の平均一次粒子径の算出方法
シリカ粒子の水性ゾル１０ｍｌを陽イオン交換樹脂に接触させた後、１１０℃で１２時間乾燥した試料について乳鉢で粉砕した。さらに３００℃で１時間乾燥させたものを測定用試料とした。窒素吸着法（ＢＥＴ法）の測定装置にはＱｕａｎｔａｃｈｒｏｍｅ社製Ｍｏｎｏｓｏｒｂを用いた。シリカ粒子の平均一次粒子径は以下の式（３）より求めた。
（３） 平均一次粒子径（ｎｍ）＝２７２７／窒素吸着法比表面積（ｍ2／g）
［４］水溶性高分子化合物の分子量測定
重量平均分子量は、ゲル浸透クロマトグラフィー法により下記の条件で測定した。
カラム：ＯＨｐａｋ ＳＢ−８０６Ｍ ＨＱ（８．０ｍｍＩＤ×３００ｍｍ）
カラム温度：４０℃
溶離液：０．１Ｍ 硝酸ナトリウム水溶液
試料濃度：０．１１質量％
流速：０．５ｍＬ／分
注入量：２００μＬ
検出器：ＲＩ（示差屈折計）
［５］半導体ウェーハに対する研磨特性の評価方法
ＳＦ１、ＣＶ値の異なるシリカ粒子に、水、アンモニア、ヒドロキシエチルセルロース、ポリエチレングリコールを添加して研磨液組成物を調製し、絶対ろ過精度１．０μｍのフィルターで濾過処理した。その研磨液組成物を４０倍に希釈した研磨スラリーを用いて、同一条件で一次研磨されたシリコンウェーハを以下に示す条件で仕上げ研磨した。
[Analysis method and test method]
[1] SF1 measurement method, [2] CV value measurement method, [3] Primary particle diameter determined from nitrogen adsorption method, [4] Molecular weight measurement of water-soluble polymer compound, unless otherwise specified, Measurement or calculation was performed according to the following analytical methods [1] to [4], and the results are shown in Table 1.
[1] Method for measuring shape factor SF1 (particle sphericity) by image analysis The sample silica particles were photographed at a magnification of 200,000 times with a transmission electron microscope (JEM-1010, manufactured by JEOL Ltd.). The shape factor SF1 was calculated from the following formula (1) using an image analysis apparatus (manufactured by Nireco Corporation: LUZEX AP) for any 1000 particles in the obtained photographic projection.
(1) SF1 = (D L 2 × π / 4) / S
(However, D L is the maximum length (nm) of the silica particles determined from the transmission electron micrograph, and S is the projected area (nm 2 ) of the silica particles.)
[2] Measuring method of particle diameter variation coefficient CV value (particle diameter distribution) The silica particles of the sample were photographed at a magnification of 200,000 times with a transmission electron microscope (JEM-1010, manufactured by JEOL Ltd.). For any 1000 particles in the obtained photographic projection, the particle size was measured using an image analyzer (manufactured by Nireco Corporation: LUZEX AP), and the average particle size and the standard deviation of the particle size from the measured values. The particle diameter variation coefficient CV value was calculated from the following formula (2).
(2) CV value (%) = σ / D A × 100
(However, σ is the particle size standard deviation, and D A is the average particle size.)
[3] Method for calculating average primary particle size of silica particles obtained by nitrogen adsorption method After contacting 10 ml of an aqueous sol of silica particles with a cation exchange resin, the sample dried at 110 ° C. for 12 hours was pulverized in a mortar. Furthermore, what was dried at 300 ° C. for 1 hour was used as a measurement sample. As a measuring device for the nitrogen adsorption method (BET method), Monosorb manufactured by Quantachrome was used. The average primary particle diameter of the silica particles was determined from the following formula (3).
(3) Average primary particle diameter (nm) = 2727 / nitrogen adsorption specific surface area (m 2 / g)
[4] Molecular weight measurement of water-soluble polymer compound The weight average molecular weight was measured by gel permeation chromatography under the following conditions.
Column: OHpak SB-806M HQ (8.0 mm ID × 300 mm)
Column temperature: 40 ° C
Eluent: 0.1M sodium nitrate aqueous solution Sample concentration: 0.11% by mass
Flow rate: 0.5 mL / min Injection volume: 200 μL
Detector: RI (differential refractometer)
[5] Method of evaluating polishing characteristics for semiconductor wafers SF1, silica particles having different CV values are added with water, ammonia, hydroxyethyl cellulose, polyethylene glycol to prepare a polishing composition, and a filter having an absolute filtration accuracy of 1.0 μm And filtered. Using a polishing slurry obtained by diluting the polishing composition 40 times, a silicon wafer that was primarily polished under the same conditions was finish-polished under the following conditions.
研磨機：９００φ片面加工機
荷重：１２０ｇ／ｃｍ2
定盤回転数：４０ｒｐｍ
ヘッド回転数：４０ｒｐｍ
研磨組成物の希釈液：３５０ｍｌ／分
研磨時間：５分
ウェーハ：シリコンウェーハＰ-（１００）
仕上げ研磨後のシリコンウェーハに公知のＳＣ１洗浄（アンモニア：過酸化水素：水の混合比＝１：１〜２：５〜７の洗浄液（ＳＣ１液）に７５〜８５℃、１０〜２０分浸漬処理）及びＳＣ２洗浄（塩酸：過酸化水素：水＝１：１〜２：５〜７の洗浄液（ＳＣ２液）に７５〜８５℃、１０〜２０分浸漬処理）を施し、ウェーハ表面の不純物を除去した。仕上げ研磨後のシリコンウェーハ表面のＬＰＤは、ＫＬＡ−Ｔｅｎｃｏｒ社製Ｓｕｒｆ Ｓｃａｎ ＳＰ−２を用いて測定した。ＬＰＤは３７ｎｍ以上の個数で示した。表１において、（○）はウェーハ１枚あたりの３７ｎｍ以上のＬＰＤの個数が８０個未満、（△）は８０個以上２００個未満、（×）は２００個以上を示す。
〔実施例１〕
平均一次粒子径が３７ｎｍであり、ＳＦ１が１．１１、ＣＶ値が７％のメチルシリケートを原料とするシリカ粒子を含有するシリカ濃度３０質量％の水性シリカゾル７９ｇに水１５６ｇ、２８質量％アンモニア水５ｇ、重量平均分子量６０万のヒドロキシエチルセルロース５９ｇ、数平均分子量１０００のポリエチレングリコール１．５ｇを加えて、シリカ濃度が８質量％、アンモニアが０．４６質量％、重量平均分子量６０万のヒドロキシエチルセルロースが０．２２質量％、数平均分子量１０００のポリエチレングリコールが０．１質量％の研磨液組成物を調製した。得られた研磨液組成物のｐＨは１０．７、２５℃におけるオストワルド粘度は３．０ｍＰａ・ｓであった。
〔実施例２〕
平均一次粒子径が３１ｎｍであり、ＳＦ１が１．１７、ＣＶ値が７％のメチルシリケートを原料とするシリカ粒子を含有するシリカ濃度３０質量％の水性シリカゾルを用いた以外は実施例１と同様に行って、シリカ濃度が８質量％、アンモニアが０．４６質量％、重量平均分子量６０万のヒドロキシエチルセルロースが０．２２質量％、数平均分子量１０００のポリエチレングリコールが０．１質量％の研磨液組成物を調製した。得られた研磨液組成物のｐＨは１０．７、２５℃におけるオストワルド粘度は３．２ｍＰａ・ｓであった。
〔実施例３〕
平均一次粒子径が３７ｎｍであり、ＳＦ１が１．２０、ＣＶ値が１２％のケイ酸ナトリウム水溶液を原料とするシリカ粒子を含有するシリカ濃度３０質量％の水性シリカゾルを用いた以外は実施例１と同様に行って、シリカ濃度が８質量％、アンモニアが０．４６質量％、重量平均分子量６０万のヒドロキシエチルセルロースが０．２２質量％、数平均分子量１０００のポリエチレングリコールが０．１質量％の研磨液組成物を調製した。得られた研磨液組成物のｐＨは１０．７、２５℃におけるオストワルド粘度は３．１ｍＰａ・ｓであった。
〔比較例１〕
平均一次粒子径が３２ｎｍであり、ＳＦ１が１．３４、ＣＶ値が３２％のケイ酸ナトリウム水溶液を原料とするシリカ粒子を含有するシリカ濃度３０質量％の水性シリカゾルを用いた以外は実施例１と同様に行ってシリカ濃度が８質量％の、アンモニアが０．４６質量％、重量平均分子量６０万のヒドロキシエチルセルロースが０．２２質量％、数平均分子量１０００のポリエチレングリコールが０．１質量％の研磨液組成物を調製した。得られた研磨液組成物のｐＨは１０．７、２５℃におけるオストワルド粘度は３．１ｍＰａ・ｓであった。
〔比較例２〕
平均一次粒子径が２９ｎｍであり、ＳＦ１が１．８９、ＣＶ値が１３％のメチルシリケートを原料とするシリカ粒子を含有するシリカ濃度３０質量％の水性シリカゾルを用いた以外は実施例１と同様に行って、シリカ濃度が８質量％、アンモニアが０．４６質量％、重量平均分子量６０万のヒドロキシエチルセルロースが０．２２質量％、数平均分子量１０００のポリエチレングリコールが０．１質量％の研磨液組成物を調製した。得られた研磨液組成物のｐＨは１０．７、２５℃におけるオストワルド粘度は３．２ｍＰａ・ｓであった。
〔実施例４〕
平均一次粒子径が３１ｎｍであり、ＳＦ１が１．１７、ＣＶ値が７％のメチルシリケートを原料とするシリカ粒子を含有するシリカ濃度３０質量％の水性シリカゾル７９ｇに水１５６ｇ、２８質量％アンモニア水５ｇ、重量平均分子量１２０万のヒドロキシエチルセルロース５９ｇ、数平均分子量１０００のポリエチレングリコール１．５ｇを加えて、シリカ濃度が８質量％、アンモニアが０．４６質量％、重量平均分子量１２０万のヒドロキシエチルセルロースが０．２２質量％、数平均分子量１０００のポリエチレングリコールが０．１質量％の研磨液組成物を調製した。得られた研磨液組成物のｐＨは１０．７、２５℃におけるオストワルド粘度は７．０ｍＰａ・ｓであった。
〔実施例５〕
平均一次粒子径が３１ｎｍであり、ＳＦ１が１．１７、ＣＶ値が７％のメチルシリケートを原料とするシリカ粒子を含有するシリカ濃度３０質量％の水性シリカゾル７９ｇに水１５６ｇ、２８質量％アンモニア水５ｇ、重量平均分子量１７０万のヒドロキシエチルセルロース５９ｇ、数平均分子量１０００のポリエチレングリコール１．５ｇを加えて、シリカ濃度が８質量％、アンモニアが０．４６質量％、重量平均分子量１７０万のヒドロキシエチルセルロースが０．２２質量％、数平均分子量１０００のポリエチレングリコールが０．１質量％の研磨液組成物を調製した。得られた研磨液組成物のｐＨは１０．７、２５℃におけるオストワルド粘度は１１．０ｍＰａ・ｓであった。
〔実施例６〕
重量平均分子量１７０万のヒドロキシエチルセルロースの添加量を０．４３質量％とした以外は実施例５と同様に行って、シリカ濃度が８質量％、アンモニアが０．４６質量％、数平均分子量１０００のポリエチレングリコールが０．１質量％の研磨液組成物を調製した。得られた研磨液組成物のｐＨは１０．７、２５℃におけるオストワルド粘度は１２．０ｍＰａ・ｓであった。
〔比較例３〕
平均一次粒子径が３１ｎｍであり、ＳＦ１が１．１７、ＣＶ値が７％のメチルシリケートを原料とするシリカ粒子を含有するシリカ濃度３０質量％の水性シリカゾル７９ｇに水１５６ｇ、２８質量％アンモニア水５ｇ、重量平均分子量６０万のヒドロキシエチルセルロース５９ｇを加え、シリカ濃度が８質量％、アンモニアが０．４６質量％、重量平均分子量６０万のヒドロキシエチルセルロースが０．２２質量％の研磨液組成物を調製した。得られた研磨液組成物のｐＨは１０．７、２５℃におけるオストワルド粘度は３．２ｍＰａ・ｓであった。
〔実施例７〕
平均一次粒子径が３１ｎｍであり、ＳＦ１が１．１７、ＣＶ値が７％のメチルシリケートを原料とするシリカ粒子を含有するシリカ濃度３０質量％の水性シリカゾル７９ｇに水１５６ｇ、２８質量％アンモニア水５ｇ、重量平均分子量６０万のヒドロキシエチルセルロース５９ｇ、数平均分子量２００のポリエチレングリコール１．５ｇを加えて、シリカ濃度が８質量％、アンモニアが０．４６質量％、重量平均分子量６０万のヒドロキシエチルセルロースが０．２２質量％、数平均分子量１００のポリエチレングリコールが０．１質量％の研磨液組成物を調製した。得られた研磨液組成物のｐＨは１０．７、２５℃におけるオストワルド粘度は３．１ｍＰａ・ｓであった。
〔実施例８〕
数平均分子量１００００のポリエチレングリコールを用いた以外は実施例７と同様に行って、シリカ濃度が８質量％、アンモニアが０．４６質量％、重量平均分子量６０万のヒドロキシエチルセルロースが０．２２質量％、数平均分子量１００００のポリエチレングリコールが０．１質量％の研磨液組成物を調製した。得られた研磨液組成物のｐＨは１０．７、２５℃におけるオストワルド粘度は３．１ｍＰａ・ｓであった。
〔実施例９〕
数平均分子量１５０００のポリエチレングリコールを用いた以外は実施例７と同様に行って、シリカ濃度が８質量％、アンモニアが０．４６質量％、重量平均分子量６０万のヒドロキシエチルセルロースが０．２２質量％、数平均分子量１５０００のポリエチレングリコールが０．１質量％の研磨液組成物を調製した。得られた研磨液組成物のｐＨは１０．７、２５℃におけるオストワルド粘度は３．１ｍＰａ・ｓであった。
〔比較例４〕
数平均分子量１００のポリエチレングリコールを用いた以外は実施例７と同様に行って、シリカ濃度が８質量％、アンモニアが０．４６質量％、重量平均分子量６０万のヒドロキシエチルセルロースが０．２２質量％、数平均分子量１００のポリエチレングリコールが０．１質量％の研磨液組成物を調製した。得られた研磨液組成物のｐＨは１０．７、２５℃におけるオストワルド粘度は３．２ｍＰａ・ｓであった。
〔比較例５〕
数平均分子量５００００のポリエチレングリコールを用いた以外は実施例７と同様に行って、シリカ濃度が８質量％、アンモニアが０．４６質量％、重量平均分子量６０万のヒドロキシエチルセルロースが０．２２質量％、数平均分子量５００００のポリエチレングリコールが０．１質量％の研磨液組成物を調製した。得られた研磨液組成物のｐＨは１０．７、２５℃におけるオストワルド粘度は３．１ｍＰａ・ｓであった。
〔実施例１０〕
平均一次粒子径が３１ｎｍであり、ＳＦ１が１．１７、ＣＶ値が７％のメチルシリケートを原料とするシリカ粒子を含有するシリカ濃度３０質量％の水性シリカゾル７９ｇに水１５６ｇ、２８質量％アンモニア水５ｇ、重量平均分子量１２０万のヒドロキシエチルセルロース５９ｇ、数平均分子量６００のポリエチレングリコール１．５ｇを加えて、シリカ濃度が８質量％、アンモニアが０．４６質量％、重量平均分子量１２０万のヒドロキシエチルセルロースが０．２２質量％、数平均分子量６００のポリエチレングリコールが０．１質量％の研磨液組成物を調製した。得られた研磨液組成物のｐＨは１０．７、２５℃におけるオストワルド粘度は７．０ｍＰａ・ｓであった。
〔比較例６〕
平均一次粒子径が３２ｎｍであり、ＳＦ１が１．３４、ＣＶ値が３２％のケイ酸ナトリウム水溶液を原料とするシリカ粒子を含有するシリカ濃度３０質量％の水性シリカゾルを用いた以外は実施例１０と同様に行って、シリカ濃度が８質量％、アンモニアが０．４６質量％、重量平均分子量１２０万のヒドロキシエチルセルロースが０．２２質量％、数平均分子量６００のポリエチレングリコールが０．１質量％の研磨液組成物を調製した。得られた研磨液組成物のｐＨは１０．７、２５℃におけるオストワルド粘度は６．８ｍＰａ・ｓであった。
〔実施例１１〕
数平均分子量１０００のポリエチレングリコールの添加量を０．０５質量％とした以外は実施例２と同様に行って、シリカ濃度が８質量％、アンモニアが０．４６質量％、重量平均分子量６０万のヒドロキシエチルセルロースが０．２２質量％、数平均分子量１０００のポリエチレングリコールが０．０５質量％の研磨液組成物を調製した。得られた研磨液組成物のｐＨは１０．７、２５℃におけるオストワルド粘度は３．２ｍＰａ・ｓであった。
〔実施例１２〕
数平均分子量１０００のポリエチレングリコールの添加量を０．２質量％とした以外は実施例２と同様に行って、シリカ濃度が８質量％、アンモニアが０．４６質量％、重量平均分子量６０万のヒドロキシエチルセルロースが０．２２質量％、数平均分子量１０００のポリエチレングリコールが０．２質量％の研磨液組成物を調製した。得られた研磨液組成物のｐＨは１０．７、２５℃におけるオストワルド粘度は３．２ｍＰａ・ｓであった。
〔実施例１３〕
数平均分子量１０００のポリエチレングリコールの添加量を０．４質量％とした以外は実施例２と同様に行って、シリカ濃度が８質量％、アンモニアが０．４６質量％、重量平均分子量６０万のヒドロキシエチルセルロースが０．２２質量％、数平均分子量１０００のポリエチレングリコールが０．４質量％の研磨液組成物を調製した。得られた研磨液組成物のｐＨは１０．７、２５℃におけるオストワルド粘度は３．２ｍＰａ・ｓであった。
〔比較例７〕
数平均分子量１０００のポリエチレングリコールを１．０質量％加えた以外は実施例２と同様に行って、シリカ濃度が８質量％、アンモニアが０．４６質量％、重量平均分子量６０万のヒドロキシエチルセルロースが０．２２質量％、数平均分子量１０００のポリエチレングリコールが１．０質量％の研磨液組成物を調製した。得られた研磨液組成物のｐＨは１０．７、２５℃におけるオストワルド粘度は３．２ｍＰａ・ｓであった。
Polishing machine: 900φ single-sided machine Load: 120 g / cm 2
Plate rotation speed: 40 rpm
Head rotation speed: 40rpm
Dilution of the polishing composition: 350 ml / min Polishing time: 5 minutes wafer: Silicon wafer P - (100)
The silicon wafer after final polishing is subjected to a known SC1 cleaning (a mixture ratio of ammonia: hydrogen peroxide: water = 1: 1 to 2: 5-7 cleaning solution (SC1 solution) at 75 to 85 ° C. for 10 to 20 minutes. ) And SC2 cleaning (hydrochloric acid: hydrogen peroxide: water = 1: 1-2: 5-7 cleaning solution (SC2 solution) at 75-85 ° C. for 10-20 minutes) to remove impurities on the wafer surface did. The LPD on the surface of the silicon wafer after finish polishing was measured using Surf Scan SP-2 manufactured by KLA-Tencor. LPD is indicated by the number of 37 nm or more. In Table 1, (◯) indicates that the number of LPDs of 37 nm or more per wafer is less than 80, (Δ) indicates 80 or more and less than 200, and (x) indicates 200 or more.
[Example 1]
An aqueous silica sol having a silica concentration of 30% by mass containing silica particles made from methyl silicate having an average primary particle size of 37 nm, SF1 of 1.11 and CV value of 7%, and 156 g of water and 28% by mass of ammonia water. 5 g, 59 g of hydroxyethyl cellulose having a weight average molecular weight of 600,000 and 1.5 g of polyethylene glycol having a number average molecular weight of 1000 are added. Hydroxyethyl cellulose having a silica concentration of 8% by mass, ammonia of 0.46% by mass and a weight average molecular weight of 600,000 is obtained. A polishing composition having 0.22% by mass and 0.1% by mass of polyethylene glycol having a number average molecular weight of 1000 was prepared. The resulting polishing composition had a pH of 10.7 and an Ostwald viscosity at 25 ° C. of 3.0 mPa · s.
[Example 2]
Example 1 except that an aqueous silica sol having a silica concentration of 30% by mass and containing silica particles starting from methyl silicate having an average primary particle size of 31 nm, SF1 of 1.17, and CV value of 7% is used. A polishing liquid having a silica concentration of 8% by mass, ammonia of 0.46% by mass, hydroxyethyl cellulose having a weight average molecular weight of 600,000 is 0.22% by mass, and polyethylene glycol having a number average molecular weight of 1000 is 0.1% by mass. A composition was prepared. The resulting polishing composition had a pH of 10.7 and an Ostwald viscosity at 25 ° C. of 3.2 mPa · s.
Example 3
Example 1 except that an aqueous silica sol having a silica concentration of 30% by mass and containing silica particles made from an aqueous sodium silicate solution having an average primary particle size of 37 nm, SF1 of 1.20, and CV value of 12% is used. In the same manner, the silica concentration is 8% by mass, ammonia is 0.46% by mass, hydroxyethyl cellulose having a weight average molecular weight of 600,000 is 0.22% by mass, and polyethylene glycol having a number average molecular weight of 1000 is 0.1% by mass. A polishing composition was prepared. The resulting polishing composition had a pH of 10.7 and an Ostwald viscosity at 25 ° C. of 3.1 mPa · s.
[Comparative Example 1]
Example 1 except that an aqueous silica sol having a silica concentration of 30% by mass and containing silica particles made from an aqueous sodium silicate solution having an average primary particle diameter of 32 nm, SF1 of 1.34, and CV value of 32% is used. And the silica concentration is 8 mass%, ammonia is 0.46 mass%, hydroxyethyl cellulose having a weight average molecular weight of 600,000 is 0.22 mass%, and polyethylene glycol having a number average molecular weight of 1000 is 0.1 mass%. A polishing composition was prepared. The resulting polishing composition had a pH of 10.7 and an Ostwald viscosity at 25 ° C. of 3.1 mPa · s.
[Comparative Example 2]
Example 1 except that an aqueous silica sol having a silica concentration of 30% by mass and containing silica particles made from methyl silicate having an average primary particle size of 29 nm, SF1 of 1.89 and a CV value of 13% is used. A polishing liquid having a silica concentration of 8% by mass, ammonia of 0.46% by mass, hydroxyethyl cellulose having a weight average molecular weight of 600,000 is 0.22% by mass, and polyethylene glycol having a number average molecular weight of 1000 is 0.1% by mass. A composition was prepared. The resulting polishing composition had a pH of 10.7 and an Ostwald viscosity at 25 ° C. of 3.2 mPa · s.
Example 4
An average silica particle diameter of 31 nm, SF1 of 1.17, and CV value of 7% Methyl silicate as a raw material containing silica particles 79 g of an aqueous silica sol having a silica concentration of 30% by mass and 156 g of water and 28% by mass of ammonia water 5 g, 59 g of hydroxyethyl cellulose having a weight average molecular weight of 1,200,000 and 1.5 g of polyethylene glycol having a number average molecular weight of 1,000 are added to obtain a hydroxyethyl cellulose having a silica concentration of 8% by mass, ammonia of 0.46% by mass and a weight average molecular weight of 1,200,000. A polishing composition having 0.22% by mass and 0.1% by mass of polyethylene glycol having a number average molecular weight of 1000 was prepared. The resulting polishing composition had a pH of 10.7 and an Ostwald viscosity at 25 ° C. of 7.0 mPa · s.
Example 5
An average silica particle diameter of 31 nm, SF1 of 1.17, and CV value of 7% Methyl silicate as a raw material containing silica particles 79 g of an aqueous silica sol having a silica concentration of 30% by mass and 156 g of water and 28% by mass of ammonia water 5 g, 59 g of hydroxyethyl cellulose having a weight average molecular weight of 1,700,000 and 1.5 g of polyethylene glycol having a number average molecular weight of 1,000 are added. Hydroxyethyl cellulose having a silica concentration of 8% by mass, ammonia of 0.46% by mass and a weight average molecular weight of 1.7 million is obtained. A polishing composition having 0.22% by mass and 0.1% by mass of polyethylene glycol having a number average molecular weight of 1000 was prepared. The resulting polishing composition had a pH of 10.7 and an Ostwald viscosity at 25 ° C. of 11.0 mPa · s.
Example 6
The same procedure as in Example 5 was carried out except that the amount of hydroxyethyl cellulose having a weight average molecular weight of 1,700,000 was changed to 0.43% by mass. The silica concentration was 8% by mass, ammonia was 0.46% by mass, and the number average molecular weight was 1,000. A polishing composition having 0.1% by mass of polyethylene glycol was prepared. The resulting polishing composition had a pH of 10.7 and an Ostwald viscosity at 25 ° C. of 12.0 mPa · s.
[Comparative Example 3]
An average silica particle diameter of 31 nm, SF1 of 1.17, and CV value of 7% Methyl silicate as a raw material containing silica particles 79 g of an aqueous silica sol having a silica concentration of 30% by mass and 156 g of water and 28% by mass of ammonia water 5 g, 59 g of hydroxyethyl cellulose having a weight average molecular weight of 600,000 were added, and a polishing liquid composition having a silica concentration of 8% by mass, ammonia of 0.46% by mass, and hydroxyethyl cellulose having a weight average molecular weight of 600,000 was prepared by 0.22% by mass. did. The resulting polishing composition had a pH of 10.7 and an Ostwald viscosity at 25 ° C. of 3.2 mPa · s.
Example 7
An average silica particle diameter of 31 nm, SF1 of 1.17, and CV value of 7% Methyl silicate as a raw material containing silica particles 79 g of an aqueous silica sol having a silica concentration of 30% by mass and 156 g of water and 28% by mass of ammonia water 5 g, 59 g of hydroxyethyl cellulose having a weight average molecular weight of 600,000 and 1.5 g of polyethylene glycol having a number average molecular weight of 200 are added to obtain a hydroxyethyl cellulose having a silica concentration of 8% by mass, ammonia of 0.46% by mass and a weight average molecular weight of 600,000. A polishing composition containing 0.22% by mass of polyethylene glycol having a number average molecular weight of 100 and 0.1% by mass was prepared. The resulting polishing composition had a pH of 10.7 and an Ostwald viscosity at 25 ° C. of 3.1 mPa · s.
Example 8
The same procedure as in Example 7 was performed except that polyethylene glycol having a number average molecular weight of 10,000 was used. The silica concentration was 8% by mass, ammonia was 0.46% by mass, and hydroxyethyl cellulose having a weight average molecular weight of 600,000 was 0.22% by mass. A polishing composition was prepared in which polyethylene glycol having a number average molecular weight of 10,000 was 0.1% by mass. The resulting polishing composition had a pH of 10.7 and an Ostwald viscosity at 25 ° C. of 3.1 mPa · s.
Example 9
The same procedure as in Example 7 was performed except that polyethylene glycol having a number average molecular weight of 15000 was used, and the silica concentration was 8% by mass, ammonia was 0.46% by mass, and hydroxyethyl cellulose having a weight average molecular weight of 600,000 was 0.22% by mass. A polishing liquid composition having a polyethylene glycol with a number average molecular weight of 15000 of 0.1% by mass was prepared. The resulting polishing composition had a pH of 10.7 and an Ostwald viscosity at 25 ° C. of 3.1 mPa · s.
[Comparative Example 4]
The same procedure as in Example 7 was performed except that polyethylene glycol having a number average molecular weight of 100 was used. The silica concentration was 8% by mass, ammonia was 0.46% by mass, and hydroxyethyl cellulose having a weight average molecular weight of 600,000 was 0.22% by mass. A polishing composition having 0.1% by mass of polyethylene glycol having a number average molecular weight of 100 was prepared. The resulting polishing composition had a pH of 10.7 and an Ostwald viscosity at 25 ° C. of 3.2 mPa · s.
[Comparative Example 5]
Except for using polyethylene glycol having a number average molecular weight of 50,000, the same procedure as in Example 7 was carried out. The silica concentration was 8% by mass, ammonia was 0.46% by mass, and hydroxyethyl cellulose having a weight average molecular weight of 600,000 was 0.22% by mass. A polishing liquid composition having a polyethylene glycol with a number average molecular weight of 50,000 was 0.1% by mass was prepared. The resulting polishing composition had a pH of 10.7 and an Ostwald viscosity at 25 ° C. of 3.1 mPa · s.
Example 10
An average silica particle diameter of 31 nm, SF1 of 1.17, and CV value of 7% Methyl silicate as a raw material containing silica particles 79 g of an aqueous silica sol having a silica concentration of 30% by mass and 156 g of water and 28% by mass of ammonia water 5 g, 59 g of hydroxyethyl cellulose having a weight average molecular weight of 1,200,000 and 1.5 g of polyethylene glycol having a number average molecular weight of 600 are added to obtain a hydroxyethyl cellulose having a silica concentration of 8% by mass, ammonia of 0.46% by mass, and a weight average molecular weight of 1,200,000. A polishing composition containing 0.22% by mass and 0.1% by mass of polyethylene glycol having a number average molecular weight of 600 was prepared. The resulting polishing composition had a pH of 10.7 and an Ostwald viscosity at 25 ° C. of 7.0 mPa · s.
[Comparative Example 6]
Example 10 except that an aqueous silica sol having a silica concentration of 30% by mass and containing silica particles made from an aqueous sodium silicate solution having an average primary particle size of 32 nm, SF1 of 1.34, and a CV value of 32% is used. The silica concentration is 8% by mass, ammonia is 0.46% by mass, hydroxyethyl cellulose having a weight average molecular weight of 1,200,000 is 0.22% by mass, and polyethylene glycol having a number average molecular weight of 600 is 0.1% by mass. A polishing composition was prepared. The resulting polishing composition had a pH of 10.7 and an Ostwald viscosity at 25 ° C. of 6.8 mPa · s.
Example 11
The same procedure as in Example 2 was conducted except that the amount of polyethylene glycol having a number average molecular weight of 1000 was changed to 0.05% by mass. The silica concentration was 8% by mass, ammonia was 0.46% by mass, and the weight average molecular weight was 600,000. A polishing composition comprising 0.22% by mass of hydroxyethyl cellulose and 0.05% by mass of polyethylene glycol having a number average molecular weight of 1000 was prepared. The resulting polishing composition had a pH of 10.7 and an Ostwald viscosity at 25 ° C. of 3.2 mPa · s.
Example 12
The same procedure as in Example 2 was conducted except that the amount of polyethylene glycol having a number average molecular weight of 1000 was 0.2% by mass. The silica concentration was 8% by mass, ammonia was 0.46% by mass, and the weight average molecular weight was 600,000. A polishing composition comprising 0.22% by mass of hydroxyethyl cellulose and 0.2% by mass of polyethylene glycol having a number average molecular weight of 1000 was prepared. The resulting polishing composition had a pH of 10.7 and an Ostwald viscosity at 25 ° C. of 3.2 mPa · s.
Example 13
The same procedure as in Example 2 was conducted except that the amount of polyethylene glycol having a number average molecular weight of 1000 was changed to 0.4% by mass. The silica concentration was 8% by mass, ammonia was 0.46% by mass, and the weight average molecular weight was 600,000. A polishing composition comprising 0.22% by mass of hydroxyethyl cellulose and 0.4% by mass of polyethylene glycol having a number average molecular weight of 1000 was prepared. The resulting polishing composition had a pH of 10.7 and an Ostwald viscosity at 25 ° C. of 3.2 mPa · s.
[Comparative Example 7]
Except for adding 1.0% by mass of polyethylene glycol having a number average molecular weight of 1000, the same procedure as in Example 2 was carried out. A polishing composition containing 0.22% by mass and 1.0% by mass of polyethylene glycol having a number average molecular weight of 1000 was prepared. The resulting polishing composition had a pH of 10.7 and an Ostwald viscosity at 25 ° C. of 3.2 mPa · s.
表１に示された通り、ＳＦ１が１．２０を超える比較例１、２及び６、ポリエチレングリコールを含まない比較例３及び０．５質量％を超える比較例７、ポリエチレングリコールの数平均分子量が２００に満たない比較例４及び１５０００を超える比較例５のＬＰＤの評価結果が良好でなかったのに対して、実施例１〜１３において、ＬＰＤの評価結果は優れたものであった。 As shown in Table 1, Comparative Examples 1, 2, and 6 in which SF1 exceeds 1.20, Comparative Example 3 that does not contain polyethylene glycol, and Comparative Example 7 that exceeds 0.5% by mass, the number average molecular weight of polyethylene glycol is The evaluation results of LPD of Comparative Example 4 and Comparative Example 5 exceeding 15000 were not good, whereas in Examples 1 to 13, the evaluation results of LPD were excellent.
本願発明の半導体ウェーハ用研磨液組成物は仕上げ研磨性能の優れ、半導体ウェーハ表面のＬＰＤの低減に好適に用いることができる。 The polishing composition for a semiconductor wafer of the present invention is excellent in finish polishing performance and can be suitably used for reducing LPD on the surface of a semiconductor wafer.
Claims (11)
（ａ）：前記シリカ粒子の、下記式（１）で表される形状係数ＳＦ１が１．００〜１．２０であること
（１） ＳＦ１＝（ＤL 2×π／４）／Ｓ
（但し、ＤLは、透過型電子顕微鏡写真から求められるシリカ粒子の最大長（ｎｍ）であり、Ｓは、シリカ粒子の投影面積（ｎｍ2）である。）
（ｂ）：前記シリカ粒子の窒素吸着法により求められる平均一次粒子径が５〜１００ｎｍであって、且つ透過型電子顕微鏡写真の画像解析から求められる粒子径変動係数ＣＶ値が０〜１５％であること
（ｃ）：前記ポリエチレングリコールの数平均分子量が２００〜１５０００であること A polishing composition for a semiconductor wafer comprising water, silica particles, an alkali compound, a water-soluble polymer compound and polyethylene glycol and satisfying the following conditions (a) to (c)
(A): The shape factor SF1 represented by the following formula (1) of the silica particles is 1.00 to 1.20. (1) SF1 = (D L 2 × π / 4) / S
(However, D L is the maximum length (nm) of the silica particles determined from the transmission electron micrograph, and S is the projected area (nm 2 ) of the silica particles.)
(B): The average primary particle diameter obtained by the nitrogen adsorption method of the silica particles is 5 to 100 nm, and the particle diameter variation coefficient CV value obtained from image analysis of a transmission electron micrograph is 0 to 15%. Present (c): The polyethylene glycol has a number average molecular weight of 200 to 15000.
The semiconductor wafer polishing according to any one of claims 1 to 10, wherein the content of the polyethylene glycol is 0.01 to 0.5 mass% based on the total mass of the polishing composition for a semiconductor wafer. Liquid composition.
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