JP2012042765A - マイクロレンズアレイを使用したスキャン露光装置 - Google Patents
マイクロレンズアレイを使用したスキャン露光装置 Download PDFInfo
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- JP2012042765A JP2012042765A JP2010184457A JP2010184457A JP2012042765A JP 2012042765 A JP2012042765 A JP 2012042765A JP 2010184457 A JP2010184457 A JP 2010184457A JP 2010184457 A JP2010184457 A JP 2010184457A JP 2012042765 A JP2012042765 A JP 2012042765A
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- Prior art keywords
- microlens array
- substrate
- microlens
- exposure
- exposure apparatus
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- 239000000758 substrate Substances 0.000 claims abstract description 83
- 238000003491 array Methods 0.000 claims abstract description 31
- 230000007423 decrease Effects 0.000 claims abstract description 3
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
【解決手段】スキャン露光装置は、複数個のマイクロレンズアレイ2が、露光すべき基板1の上方に、スキャン方向に垂直の方向に配列して支持基板に支持されている。そして、各マイクロレンズアレイは、その配列方向に対し、露光基板に平行の方向から傾斜することができるように支持基板に支持されている。これらのマイクロレンズアレイの傾斜角度は前記配列方向に関し、徐々に大きく又は小さくなるように構成されている。
【選択図】図6
Description
2:マイクロレンズアレイ
2a:マイクロレンズ
2−1〜2−4:(構成)マイクロレンズアレイ
3:マスク
3a:透明基板
3b:Cr膜
4:露光光源
5:スキャン方向
6:支持基板
11:開口絞り
12:6角視野絞り
12a:矩形部分
12b、12c:三角形部分
Claims (5)
- 露光すべき基板の上方に配置され、マイクロレンズが2次元的に配置された複数個のマイクロレンズアレイと、このマイクロレンズアレイの上方に配置され所定の露光パターンが形成されたマスクと、このマスクに対して露光光を照射する露光光源と、前記マイクロレンズアレイと前記基板及び前記マスクとを相対的に一方向に移動させる移動装置とを有し、前記複数個のマイクロレンズアレイは、支持基板上に、前記一方向に垂直の方向に配置されており、各マイクロレンズアレイは、前記支持基板に対してその配置方向に関し被露光基板に平行の方向から傾斜することができるように支持されていることを特徴とするマイクロレンズアレイを使用したスキャン露光装置。
- 前記マイクロレンズアレイは、その傾斜角度が、前記配置方向に関し徐々に大きくなるか、又は小さくなっていることを特徴とする請求項1に記載のマイクロレンズアレイを使用したスキャン露光装置。
- 前記マイクロレンズアレイは、前記一方向に2列に配置され、各マイクロレンズアレイは前記支持基板上で千鳥に配置されていることを特徴とする請求項1又は2に記載のマイクロレンズアレイを使用したスキャン露光装置。
- 前記マイクロレンズは、前記マスクの露光パターンの正立等倍像を前記基板上に投影することを特徴とする請求項1乃至3のいずれか1項に記載のマイクロレンズアレイを使用したスキャン露光装置。
- 前記マイクロレンズアレイの傾斜角度の調整は、前記被露光基板に既に形成されている下層パターンのトータルピッチを予め測定しておき、露光パターンのピッチをこの下層パターンのトータルピッチに合わせるように行うことを特徴とする請求項1乃至4のいずれか1項に記載のマイクロレンズアレイを使用したスキャン露光装置。
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010184457A JP5704525B2 (ja) | 2010-08-19 | 2010-08-19 | マイクロレンズアレイを使用したスキャン露光装置 |
| CN201180040182.XA CN103052917B (zh) | 2010-08-19 | 2011-07-22 | 使用了微透镜阵列的扫描曝光装置 |
| PCT/JP2011/066646 WO2012023381A1 (ja) | 2010-08-19 | 2011-07-22 | マイクロレンズアレイを使用したスキャン露光装置 |
| KR1020137006840A KR101761976B1 (ko) | 2010-08-19 | 2011-07-22 | 마이크로 렌즈 어레이를 사용한 스캔 노광 장치 |
| US13/816,462 US9069251B2 (en) | 2010-08-19 | 2011-07-22 | Scanning exposure apparatus using a plurality of microlens arrays with adjustable inclination |
| TW100128773A TWI536114B (zh) | 2010-08-19 | 2011-08-11 | 使用微透鏡陣列之掃描曝光裝置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010184457A JP5704525B2 (ja) | 2010-08-19 | 2010-08-19 | マイクロレンズアレイを使用したスキャン露光装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012042765A true JP2012042765A (ja) | 2012-03-01 |
| JP5704525B2 JP5704525B2 (ja) | 2015-04-22 |
Family
ID=45605042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010184457A Expired - Fee Related JP5704525B2 (ja) | 2010-08-19 | 2010-08-19 | マイクロレンズアレイを使用したスキャン露光装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9069251B2 (ja) |
| JP (1) | JP5704525B2 (ja) |
| KR (1) | KR101761976B1 (ja) |
| CN (1) | CN103052917B (ja) |
| TW (1) | TWI536114B (ja) |
| WO (1) | WO2012023381A1 (ja) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013033071A (ja) * | 2011-07-29 | 2013-02-14 | V Technology Co Ltd | マイクロレンズアレイを使用したスキャン露光装置 |
| JP2013200506A (ja) * | 2012-03-26 | 2013-10-03 | Nikon Corp | 露光装置、露光方法及びデバイス製造方法 |
| JP2014168030A (ja) * | 2012-03-29 | 2014-09-11 | Nsk Technology Co Ltd | 露光装置及び露光方法 |
| KR20180008713A (ko) * | 2015-05-24 | 2018-01-24 | 상하이 마이크로 일렉트로닉스 이큅먼트(그룹) 컴퍼니 리미티드 | 노광 장치 |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102096989B1 (ko) | 2013-11-04 | 2020-04-03 | 현대모비스 주식회사 | 차량의 요크유격보상장치 |
| CN104865801B (zh) * | 2015-06-01 | 2017-03-01 | 京东方科技集团股份有限公司 | 曝光装置 |
| KR102129706B1 (ko) * | 2019-08-13 | 2020-07-03 | 주식회사 옵토전자 | 마이크로 광학소자 및 이를 포함하는 광전자 모듈 |
| US12072290B2 (en) * | 2019-11-11 | 2024-08-27 | University Of South Carolina | Hyperspectral imaging with a spatial heterodyne spectrometer |
| KR102129703B1 (ko) | 2020-02-06 | 2020-07-03 | 주식회사 옵토전자 | 회절 방식을 이용한 마이크로 광학소자 시스템 |
| KR102129701B1 (ko) * | 2020-02-06 | 2020-07-03 | 주식회사 옵토전자 | 무회전 스캐닝을 위한 마이크로 광학소자 시스템 |
| KR102129702B1 (ko) * | 2020-02-06 | 2020-07-03 | 주식회사 옵토전자 | 마이크로 광학소자 시스템 제조 방법 |
| KR102439662B1 (ko) | 2020-08-11 | 2022-09-05 | 주식회사 나무가 | 무작위 패턴을 가지는 마이크로 렌즈 어레이 및 그 제조방법 |
| CN113379652B (zh) * | 2021-08-11 | 2021-10-22 | 深圳市先地图像科技有限公司 | 一种激光成像用的线形图像修正方法、系统及相关设备 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09244255A (ja) * | 1996-03-13 | 1997-09-19 | Nikon Corp | 液晶用露光装置 |
| JP2005244238A (ja) * | 2004-02-27 | 2005-09-08 | Asml Netherlands Bv | リソグラフィ機器及びデバイスの製造方法 |
| JP2005317970A (ja) * | 2004-04-30 | 2005-11-10 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
| JP2006191031A (ja) * | 2004-12-28 | 2006-07-20 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
| JP2006191060A (ja) * | 2004-12-28 | 2006-07-20 | Asml Netherlands Bv | リソグラフィ装置およびデバイス製造方法 |
| JP2007003829A (ja) * | 2005-06-23 | 2007-01-11 | Fujifilm Holdings Corp | 画像露光装置 |
| JP2008292916A (ja) * | 2007-05-28 | 2008-12-04 | Fujifilm Corp | 画像露光装置及びマイクロレンズユニット並びにその製造方法 |
| JP2009055060A (ja) * | 2004-04-30 | 2009-03-12 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
| JP2011118155A (ja) * | 2009-12-03 | 2011-06-16 | V Technology Co Ltd | 露光装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004287082A (ja) | 2003-03-20 | 2004-10-14 | Tadahiro Omi | マスク描画装置 |
| JP2007503611A (ja) * | 2003-08-27 | 2007-02-22 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 光学像を形成するための方法及び装置 |
| JP2007258638A (ja) * | 2006-03-27 | 2007-10-04 | Sony Corp | 液侵露光方法および液侵露光装置 |
| JP2008116606A (ja) * | 2006-11-02 | 2008-05-22 | Nikon Corp | マイクロレンズの製造方法 |
| EP1950594A1 (de) * | 2007-01-17 | 2008-07-30 | Carl Zeiss SMT AG | Abbildende Optik, Projektionsbelichtunsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage, durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement sowie Verwendung einer derartigen abbildenden Optik |
-
2010
- 2010-08-19 JP JP2010184457A patent/JP5704525B2/ja not_active Expired - Fee Related
-
2011
- 2011-07-22 US US13/816,462 patent/US9069251B2/en not_active Expired - Fee Related
- 2011-07-22 KR KR1020137006840A patent/KR101761976B1/ko not_active Expired - Fee Related
- 2011-07-22 CN CN201180040182.XA patent/CN103052917B/zh not_active Expired - Fee Related
- 2011-07-22 WO PCT/JP2011/066646 patent/WO2012023381A1/ja not_active Ceased
- 2011-08-11 TW TW100128773A patent/TWI536114B/zh not_active IP Right Cessation
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09244255A (ja) * | 1996-03-13 | 1997-09-19 | Nikon Corp | 液晶用露光装置 |
| JP2005244238A (ja) * | 2004-02-27 | 2005-09-08 | Asml Netherlands Bv | リソグラフィ機器及びデバイスの製造方法 |
| JP2005317970A (ja) * | 2004-04-30 | 2005-11-10 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
| JP2009055060A (ja) * | 2004-04-30 | 2009-03-12 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
| JP2006191031A (ja) * | 2004-12-28 | 2006-07-20 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
| JP2006191060A (ja) * | 2004-12-28 | 2006-07-20 | Asml Netherlands Bv | リソグラフィ装置およびデバイス製造方法 |
| JP2007003829A (ja) * | 2005-06-23 | 2007-01-11 | Fujifilm Holdings Corp | 画像露光装置 |
| JP2008292916A (ja) * | 2007-05-28 | 2008-12-04 | Fujifilm Corp | 画像露光装置及びマイクロレンズユニット並びにその製造方法 |
| JP2011118155A (ja) * | 2009-12-03 | 2011-06-16 | V Technology Co Ltd | 露光装置 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013033071A (ja) * | 2011-07-29 | 2013-02-14 | V Technology Co Ltd | マイクロレンズアレイを使用したスキャン露光装置 |
| JP2013200506A (ja) * | 2012-03-26 | 2013-10-03 | Nikon Corp | 露光装置、露光方法及びデバイス製造方法 |
| JP2014168030A (ja) * | 2012-03-29 | 2014-09-11 | Nsk Technology Co Ltd | 露光装置及び露光方法 |
| KR20180008713A (ko) * | 2015-05-24 | 2018-01-24 | 상하이 마이크로 일렉트로닉스 이큅먼트(그룹) 컴퍼니 리미티드 | 노광 장치 |
| JP2018522287A (ja) * | 2015-05-24 | 2018-08-09 | シャンハイ マイクロ エレクトロニクス イクイプメント(グループ)カンパニー リミティド | 露光装置 |
| KR102048619B1 (ko) * | 2015-05-24 | 2019-11-25 | 상하이 마이크로 일렉트로닉스 이큅먼트(그룹) 컴퍼니 리미티드 | 노광 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103052917A (zh) | 2013-04-17 |
| TW201219993A (en) | 2012-05-16 |
| KR20130132770A (ko) | 2013-12-05 |
| KR101761976B1 (ko) | 2017-07-26 |
| US9069251B2 (en) | 2015-06-30 |
| JP5704525B2 (ja) | 2015-04-22 |
| US20130135602A1 (en) | 2013-05-30 |
| CN103052917B (zh) | 2016-04-27 |
| TWI536114B (zh) | 2016-06-01 |
| WO2012023381A1 (ja) | 2012-02-23 |
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