JP2011505068A - 太陽電池の金属電極の電気化学的堆積方法 - Google Patents
太陽電池の金属電極の電気化学的堆積方法 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 133
- 239000002184 metal Substances 0.000 title claims abstract description 133
- 238000000034 method Methods 0.000 title claims abstract description 92
- 238000004070 electrodeposition Methods 0.000 title description 18
- 239000008151 electrolyte solution Substances 0.000 claims abstract description 100
- 239000007787 solid Substances 0.000 claims abstract description 35
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 21
- 238000000151 deposition Methods 0.000 claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 7
- 239000000654 additive Substances 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 230000000996 additive effect Effects 0.000 claims description 4
- 239000003792 electrolyte Substances 0.000 claims description 4
- 210000004027 cell Anatomy 0.000 description 232
- 229940021013 electrolyte solution Drugs 0.000 description 81
- 230000008569 process Effects 0.000 description 40
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 30
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 25
- 229910052802 copper Inorganic materials 0.000 description 25
- 239000010949 copper Substances 0.000 description 25
- 238000009713 electroplating Methods 0.000 description 25
- 238000005234 chemical deposition Methods 0.000 description 18
- 229910052759 nickel Inorganic materials 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 14
- 238000003487 electrochemical reaction Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 13
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 238000007650 screen-printing Methods 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 5
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 5
- 238000009776 industrial production Methods 0.000 description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910000365 copper sulfate Inorganic materials 0.000 description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical group [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 2
- 229910001297 Zn alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- KXZJHVJKXJLBKO-UHFFFAOYSA-N chembl1408157 Chemical compound N=1C2=CC=CC=C2C(C(=O)O)=CC=1C1=CC=C(O)C=C1 KXZJHVJKXJLBKO-UHFFFAOYSA-N 0.000 description 2
- 238000001311 chemical methods and process Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- DOBRDRYODQBAMW-UHFFFAOYSA-N copper(i) cyanide Chemical compound [Cu+].N#[C-] DOBRDRYODQBAMW-UHFFFAOYSA-N 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000010985 leather Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910021484 silicon-nickel alloy Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 239000002351 wastewater Substances 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- LYWNNXMNOSKLHY-UHFFFAOYSA-N 4-hydroxy-2-methyl-5-propan-2-ylbenzenesulfonic acid Chemical compound CC(C)C1=CC(S(O)(=O)=O)=C(C)C=C1O LYWNNXMNOSKLHY-UHFFFAOYSA-N 0.000 description 1
- 229910021586 Nickel(II) chloride Chemical group 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- TVQLLNFANZSCGY-UHFFFAOYSA-N disodium;dioxido(oxo)tin Chemical compound [Na+].[Na+].[O-][Sn]([O-])=O TVQLLNFANZSCGY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000010814 metallic waste Substances 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical group Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N nitrate group Chemical group [N+](=O)([O-])[O-] NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 229940079864 sodium stannate Drugs 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- RCIVOBGSMSSVTR-UHFFFAOYSA-L stannous sulfate Chemical compound [SnH2+2].[O-]S([O-])(=O)=O RCIVOBGSMSSVTR-UHFFFAOYSA-L 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L sulfate group Chemical group S(=O)(=O)([O-])[O-] QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 229910000375 tin(II) sulfate Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- GTLDTDOJJJZVBW-UHFFFAOYSA-N zinc cyanide Chemical compound [Zn+2].N#[C-].N#[C-] GTLDTDOJJJZVBW-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/011—Electroplating using electromagnetic wave irradiation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
- C25D7/126—Semiconductors first coated with a seed layer or a conductive layer for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Materials Engineering (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
一、第1実施例
二、第2実施例
三、第3実施例
Claims (22)
- 陰極を含んだ太陽電池30の表面を電解質溶液20と接触させるステップと、
太陽電池30の陽極を固体金属50に接続するステップと、
光源60を使用して太陽電池30の主受光面に光を照射するステップと、を含み、
前記電解質溶液20内の金属イオンが前記太陽電池30の陰極表面から生じた電子を受け取って金属を生成し、前記太陽電池30の陰極表面に堆積されるとともに、前記固体金属50が前記太陽電池30の陽極に電子を供給する同時に、金属イオンとして電解質溶液20に溶解される、ことを特徴とする太陽電池の金属電極の電気化学的堆積方法。 - 前記太陽電池30は、陰極の位置する表面以外の部分が、前記電解質溶液20と接触しないことを特徴とする請求項1に記載の方法。
- 前記太陽電池30は、前記電解質溶液20と接触する表面が、陰極のみを含んでいることを特徴とする請求項1に記載の方法。
- 前記太陽電池30は、前記電解質溶液20と接触する表面が、陰極と陽極の双方を含んでいることを特徴とする請求項1に記載の方法。
- 前記電解質溶液20は、金属イオン、酸基、水および添加剤を含むことを特徴とする請求項1又は2に記載の方法。
- 前記電解質溶液20は、少なくとも1種の金属イオンを含むことを特徴とする請求項5に記載の方法。
- 前記電解質溶液20は、少なくとも1種の酸基を含むことを特徴とする請求項5に記載の方法。
- 前記電解質溶液20は、少なくとも1種の添加剤を含むことを特徴とする請求項5に記載の方法。
- 前記主受光面は、該太陽電池30の前記電解質溶液20と接触する表面であることを特徴とする請求項1に記載の方法。
- 前記主受光面は、該太陽電池30の前記電解質溶液20と接触しない表面であることを特徴とする請求項1に記載の方法。
- 前記光を照射するステップにおいて、光照射の光源60は、自然光、又は照明装置から発射された光であることを特徴とする請求項1に記載の方法。
- 前記光を照射するステップにおいて、光は直接太陽電池30の表面に照射されることを特徴とする請求項1に記載の方法。
- 前記光を照射するステップにおいて、光は、電解質又はその他の媒体を透過して太陽電池30の表面に照射されることを特徴とする請求項1に記載の方法。
- 前記太陽電池30の陽極と前記固体金属50とは、導線40によって電気的に接続されていることを特徴とする請求項1に記載の方法。
- 前記固体金属50は、少なくとも1種の金属からなることを特徴とする請求項1又は14に記載の方法。
- 前記固体金属50は、少なくとも一表面が前記電解質溶液20と接触することを特徴とする請求項1又は14に記載の方法。
- 該方法は、さらに太陽電池30の陽極と固体金属50との間に外部電源を接続するステップを含むことを特徴とする請求項1に記載の方法。
- 前記外部電源は、負極が前記太陽電池30の陽極に接続され、正極が前記固体金属50に接続された直流電源であることを特徴とする請求項17に記載の方法。
- 前記直流電源の出力パワーは0より大きいであることを特徴とする請求項18に記載の方法。
- 該固体金属50の成分は、太陽電池30の陰極表面に堆積される金属の成分と同様であることを特徴とする請求項1に記載の方法。
- 前記太陽電池30は、電解質溶液20の上方に固定されることを特徴とする請求項1に記載の方法。
- 前記太陽電池30は、水平方向に移動可能であることを特徴とする請求項1に記載の方法。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710188267.8 | 2007-11-30 | ||
| CN2007101882678A CN101257059B (zh) | 2007-11-30 | 2007-11-30 | 一种电化学沉积太阳能电池金属电极的方法 |
| PCT/CN2008/000220 WO2009070945A1 (en) | 2007-11-30 | 2008-01-29 | Method for electrochmical depositing metal electrode of solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011505068A true JP2011505068A (ja) | 2011-02-17 |
| JP5123394B2 JP5123394B2 (ja) | 2013-01-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010535196A Expired - Fee Related JP5123394B2 (ja) | 2007-11-30 | 2008-01-29 | 太陽電池の金属電極の電気化学的堆積方法 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20110011745A1 (ja) |
| EP (1) | EP2216823A1 (ja) |
| JP (1) | JP5123394B2 (ja) |
| KR (1) | KR101125418B1 (ja) |
| CN (1) | CN101257059B (ja) |
| AU (1) | AU2008331357B2 (ja) |
| CA (1) | CA2707242A1 (ja) |
| EA (1) | EA201000760A1 (ja) |
| UA (1) | UA100533C2 (ja) |
| WO (1) | WO2009070945A1 (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012237060A (ja) * | 2011-04-19 | 2012-12-06 | Rohm & Haas Electronic Materials Llc | 半導体上の銅のめっき |
| JP2017536477A (ja) * | 2014-10-20 | 2017-12-07 | 蘇州易益新能源科技有限公司 | 金属の水平電気化学堆積法 |
| JP7757022B2 (ja) | 2016-02-25 | 2025-10-21 | ニューサウス イノベーションズ ピーティーワイ リミテッド | 半導体デバイスにおけるtco材料の表面を処理するための方法および装置 |
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| CN101409312B (zh) * | 2008-10-20 | 2010-04-21 | 东方日升新能源股份有限公司 | 一种单晶硅片制绒的方法 |
| LU91561B1 (en) * | 2009-04-30 | 2010-11-02 | Univ Luxembourg | Electrical and opto-electrical characterisation oflarge-area semiconductor devices. |
| CN102460656B (zh) * | 2009-06-02 | 2015-02-11 | 三菱电机株式会社 | 太阳能电池的制造方法 |
| US20110195542A1 (en) | 2010-02-05 | 2011-08-11 | E-Chem Enterprise Corp. | Method of providing solar cell electrode by electroless plating and an activator used therein |
| US20110192316A1 (en) * | 2010-02-05 | 2011-08-11 | E-Chem Enterprise Corp. | Electroless plating solution for providing solar cell electrode |
| CN101807625B (zh) * | 2010-02-26 | 2012-05-09 | 华南师范大学 | 一种晶体硅太阳能电池栅状阵列电极的制造方法 |
| US8795502B2 (en) * | 2010-05-12 | 2014-08-05 | International Business Machines Corporation | Electrodeposition under illumination without electrical contacts |
| US9085829B2 (en) * | 2010-08-31 | 2015-07-21 | International Business Machines Corporation | Electrodeposition of thin-film cells containing non-toxic elements |
| DE102010042642B4 (de) * | 2010-10-19 | 2013-12-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zur galvanischen Beschichtung von Substraten und Solarzellen |
| CN103374737A (zh) * | 2012-04-27 | 2013-10-30 | 库特勒自动化系统(苏州)有限公司 | 太阳能电池电镀装置 |
| FR2995451B1 (fr) * | 2012-09-11 | 2014-10-24 | Commissariat Energie Atomique | Procede de metallisation d'une cellule photovoltaique et cellule photovoltaique ainsi obtenue |
| CN102956749A (zh) * | 2012-11-20 | 2013-03-06 | 泰通(泰州)工业有限公司 | 一种太阳能电池电极的制备工艺 |
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| KR101575068B1 (ko) * | 2014-09-16 | 2015-12-07 | 주식회사 호진플라텍 | 광유도 도금 및 순방향 바이어스 도금을 병행하는 태양전지 기판용 도금장치 |
| CN106531817A (zh) * | 2015-09-08 | 2017-03-22 | 英属开曼群岛商精曜有限公司 | 半导体元件及其制作方法 |
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| US10793965B2 (en) | 2016-08-29 | 2020-10-06 | Board Of Trustees Of The University Of Arkansas | Light-directed electrochemical patterning of copper structures |
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| CN111826692A (zh) * | 2020-07-08 | 2020-10-27 | 苏州太阳井新能源有限公司 | 一种光伏电池光诱导或光辅助电镀的方法 |
| CN113502513B (zh) * | 2021-08-12 | 2023-05-30 | 辽宁大学 | 一种利用太阳能直接沉积铜金属的方法 |
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- 2008-01-29 EP EP08706416A patent/EP2216823A1/en not_active Withdrawn
- 2008-01-29 UA UAA201006914A patent/UA100533C2/ru unknown
- 2008-01-29 KR KR1020107014597A patent/KR101125418B1/ko not_active Expired - Fee Related
- 2008-01-29 EA EA201000760A patent/EA201000760A1/ru unknown
- 2008-01-29 US US12/734,821 patent/US20110011745A1/en not_active Abandoned
- 2008-01-29 CA CA2707242A patent/CA2707242A1/en not_active Abandoned
- 2008-01-29 JP JP2010535196A patent/JP5123394B2/ja not_active Expired - Fee Related
- 2008-01-29 AU AU2008331357A patent/AU2008331357B2/en not_active Ceased
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| WO2007121619A1 (fr) * | 2006-04-20 | 2007-11-01 | Wuxi Suntech Power Co, Ltd | Procédé de fabrication d'électrodes de cellules solaires et appareil de dépôt électrochimique |
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| JP2012237060A (ja) * | 2011-04-19 | 2012-12-06 | Rohm & Haas Electronic Materials Llc | 半導体上の銅のめっき |
| JP2017536477A (ja) * | 2014-10-20 | 2017-12-07 | 蘇州易益新能源科技有限公司 | 金属の水平電気化学堆積法 |
| JP7757022B2 (ja) | 2016-02-25 | 2025-10-21 | ニューサウス イノベーションズ ピーティーワイ リミテッド | 半導体デバイスにおけるtco材料の表面を処理するための方法および装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| EA201000760A1 (ru) | 2010-12-30 |
| CN101257059B (zh) | 2011-04-13 |
| AU2008331357B2 (en) | 2012-05-31 |
| UA100533C2 (ru) | 2013-01-10 |
| WO2009070945A1 (en) | 2009-06-11 |
| EP2216823A1 (en) | 2010-08-11 |
| CA2707242A1 (en) | 2009-06-11 |
| KR101125418B1 (ko) | 2012-03-27 |
| AU2008331357A1 (en) | 2009-06-11 |
| CN101257059A (zh) | 2008-09-03 |
| KR20100089898A (ko) | 2010-08-12 |
| US20110011745A1 (en) | 2011-01-20 |
| JP5123394B2 (ja) | 2013-01-23 |
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