JP2011258674A - Semiconductor light-emitting device and method of manufacturing the same - Google Patents

Abstract

A semiconductor light-emitting device and a method for manufacturing the semiconductor light-emitting device that can alleviate stress applied to a semiconductor layer and improve luminous efficiency.
According to an embodiment, a semiconductor light emitting device including a light emitting unit 10d, a first conductive unit 30a, a second conductive unit 30b, a first insulating layer 21, a sealing unit 50, and an optical layer 60 is provided. The The light emitting unit includes a semiconductor stacked body 10 having a first main surface 10b and a second main surface 10a, and first and second electrodes provided on the second main surface. The first and second conductive portions include first and second pillar portions that are connected to the first and second electrodes, respectively, and are erected on the second main surface. The first insulating layer is provided between at least a part of the first and second pillar portions and the semiconductor stacked body. The sealing portion covers the side surfaces of the first and second conductive portions. The optical layer includes a wavelength conversion unit that is provided on the first main surface of the semiconductor stacked body and converts the wavelength of the emitted light emitted from the light emitting unit 10d.
[Selection] Figure 1

Description

  Embodiments described herein relate generally to a semiconductor light emitting device and a method for manufacturing the same.

  As a small light-emitting device with low power consumption, a white LED light-emitting device that emits white light by combining a semiconductor light-emitting element such as a blue LED (Light Emitting Diode) and a phosphor has been developed.

  For example, a semiconductor light emitting device having a structure in which a phosphor is applied to the surface of an LED chip after die bonding the LED chip to a lead frame or a conductive substrate to perform wire bonding is known. However, in such a semiconductor light emitting device, in addition to the LED chip, members such as a lead frame, a conductive substrate, and a bonding wire are necessary, which increases the size of the device and hinders downsizing.

  In the semiconductor light emitting device, stress may be applied to the semiconductor layer of the LED chip due to the difference in linear expansion coefficient between the electrode material connected to the LED chip and the LED chip, and the light emission efficiency of the semiconductor layer may be reduced. When the semiconductor light emitting device is downsized, heat is likely to accumulate, which is a particular problem.

JP 2001-210874 A

  Embodiments of the present invention provide a semiconductor light emitting device that can relieve stress applied to a semiconductor layer and improve luminous efficiency, and a method of manufacturing the same.

  According to the embodiment of the present invention, a semiconductor light emitting device including a light emitting unit, a first conductive unit, a second conductive unit, a first insulating layer, a sealing unit, and an optical layer is provided. . The light emitting unit includes a semiconductor stacked body having a first main surface and a second main surface opposite to the first main surface, and a first provided on the second main surface of the semiconductor stacked body. An electrode and a second electrode. The first conductive portion includes a first pillar portion that is electrically connected to the first electrode and is erected on the first main surface. The second conductive portion includes a second pillar portion that is electrically connected to the second electrode and is erected on the first main surface. The first insulating layer is at least one of between the at least part of the first pillar part and the semiconductor stacked body and between at least a part of the second pillar part and the semiconductor stacked body. Provided. The sealing portion covers a side surface of the first conductive portion and a side surface of the second conductive portion. The optical layer is an optical layer provided on the first main surface of the semiconductor stacked body, and absorbs emitted light emitted from the light emitting layer and emits light having a wavelength different from the wavelength of the emitted light. A wavelength conversion unit for emission is included.

  According to another embodiment of the present invention, a method of manufacturing a semiconductor light emitting device having a light emitting part, a first conductive part, a second conductive part, a first insulating layer, a sealing part, and an optical layer. Is provided. The light emitting unit includes a semiconductor stacked body having a first main surface and a second main surface opposite to the first main surface, and a first provided on the second main surface of the semiconductor stacked body. An electrode and a second electrode. The first conductive portion includes a first pillar portion that is electrically connected to the first electrode and is erected on the first main surface. The second conductive portion includes a second pillar portion that is electrically connected to the second electrode and is erected on the first main surface. The first insulating layer is at least one of between the at least part of the first pillar part and the semiconductor stacked body and between at least a part of the second pillar part and the semiconductor stacked body. Provided. The sealing portion covers a side surface of the first conductive portion and a side surface of the second conductive portion. The optical layer is an optical layer provided on the first main surface of the semiconductor stacked body, and absorbs emitted light emitted from the light emitting layer and emits light having a wavelength different from the wavelength of the emitted light. A wavelength conversion unit for emission is included. In the manufacturing method, in a region corresponding to at least one of the first pillar part and at least part of the second pillar part of the first main surface of the semiconductor stacked body, The first insulating layer is formed, and a conductive film that forms at least a part of the first conductive part and at least a part of the second conductive part is formed on the first insulating layer.

FIG. 1A and FIG. 1B are schematic views illustrating the configuration of the semiconductor light emitting device according to the first embodiment. FIG. 2A to FIG. 2E are schematic cross-sectional views in order of the processes, illustrating the method for manufacturing the semiconductor light emitting device according to the first embodiment. FIG. 3A to FIG. 3E are schematic cross-sectional views in order of the processes, illustrating the method for manufacturing the semiconductor light emitting device according to the first embodiment. FIG. 4A to FIG. 4E are schematic cross-sectional views in order of the processes, illustrating the method for manufacturing the semiconductor light emitting device according to the first embodiment. FIG. 5A to FIG. 5C are schematic cross-sectional views illustrating the configuration of another semiconductor light emitting device according to the first embodiment. FIG. 6A to FIG. 6C are schematic cross-sectional views illustrating the configuration of another semiconductor light emitting device according to the first embodiment. FIG. 7A and FIG. 7B are schematic views illustrating the configuration of another semiconductor light emitting device according to the first embodiment. FIG. 8 is a schematic perspective view illustrating the configuration of another semiconductor light emitting device according to the first embodiment. FIG. 9A to FIG. 9C are schematic views illustrating the configuration of another semiconductor light emitting device according to the first embodiment. FIG. 10A to FIG. 10D are schematic plan views illustrating the configuration of the elements of another semiconductor light emitting device according to the first embodiment. FIG. 11A to FIG. 11C are schematic views illustrating the configuration of another semiconductor light emitting device according to the first embodiment. FIG. 12A to FIG. 12D are schematic plan views illustrating the configuration of elements of another semiconductor light emitting device according to the first embodiment. FIG. 13A to FIG. 13C are schematic views illustrating the configuration of another semiconductor light emitting device according to the first embodiment. FIG. 14A to FIG. 14D are schematic plan views illustrating the configuration of elements of another semiconductor light emitting device according to the first embodiment. FIG. 15A to FIG. 15C are schematic views illustrating the configuration of the semiconductor light emitting device according to the second embodiment. FIG. 16A to FIG. 16D are schematic plan views illustrating the configuration of the elements of the semiconductor light emitting device according to the second embodiment. FIG. 17 is a flowchart illustrating the method for manufacturing the semiconductor light emitting device according to the third embodiment.

Embodiments of the present invention will be described below with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between the parts, and the like are not necessarily the same as actual ones. Further, even when the same part is represented, the dimensions and ratios may be represented differently depending on the drawings.
Note that, in the present specification and each drawing, the same elements as those described above with reference to the previous drawings are denoted by the same reference numerals, and detailed description thereof is omitted as appropriate.

(First embodiment)
FIG. 1A and FIG. 1B are schematic views illustrating the configuration of the semiconductor light emitting device according to the first embodiment.
That is, FIG. 1B is a schematic plan view, and FIG. 1A is a cross-sectional view taken along the line AA ′ in FIG.

  As shown in FIGS. 1A and 1B, the semiconductor light emitting device 110 according to the present embodiment includes a light emitting unit 10d, a first conductive unit 30a, a second conductive unit 30b, and a first insulation. The layer 21, the sealing part 50, and the optical layer 60 are provided.

The light emitting unit 10 d includes the semiconductor stacked body 10, the first electrode 14, and the second electrode 15.
The semiconductor stacked body 10 includes a first semiconductor layer 11 of a first conductivity type, a second semiconductor layer 12 of a second conductivity type, and a light emitting layer provided between the first semiconductor layer 11 and the second semiconductor layer 12. 13 and so on.

  In the semiconductor stacked body 10, the second semiconductor layer 12 and the light emitting layer 13 are selectively removed, and a part of the first semiconductor layer 11 is exposed on the second main surface 10 a on the second semiconductor layer 12 side. .

  That is, the semiconductor stacked body 10 has a first main surface 10b and a second main surface 10a opposite to the first main surface 10b. The second semiconductor layer 12 is disposed on the second major surface 10a side, and the first semiconductor layer 11 is disposed on the first major surface 10b side. The areas of the second semiconductor layer 12 and the light emitting layer 13 are smaller than the area of the first semiconductor layer 11. It is not covered by the layer 13.

  The first conductivity type is, for example, n-type, and the second conductivity type is, for example, p-type. However, the embodiment is not limited to this, and the first conductivity type may be p-type and the second conductivity type may be n-type. In the following description, it is assumed that the first conductivity type is n-type and the second conductivity type is p-type. That is, the first semiconductor layer 11 is an n-type semiconductor layer. The second semiconductor layer 12 is a p-type semiconductor layer.

  For the first semiconductor layer 11, the second semiconductor layer 12, and the light emitting layer 13, for example, a nitride semiconductor can be used. The first semiconductor layer 11 is an n-type cladding layer containing, for example, GaN. The second semiconductor layer 12 is, for example, a p-type cladding layer. The light emitting layer 13 includes, for example, a quantum well layer and a barrier layer stacked on the quantum well layer. The light emitting layer 13 can have, for example, a single quantum well structure or a multiple quantum well structure.

  Here, a direction from the second main surface 10a toward the first main surface 10b is defined as a Z-axis direction. That is, the Z-axis direction is a stacking direction of the first semiconductor layer 11, the light emitting layer 13, and the second semiconductor layer 12. One direction perpendicular to the Z-axis direction is taken as an X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is taken as a Y-axis direction.

  In the semiconductor stacked body 10, for example, a crystal serving as the first semiconductor layer 11, a crystal serving as the light emitting layer 13, and a crystal serving as the second semiconductor layer 12 are sequentially grown on a substrate such as sapphire, and thereafter In this region, part of the first semiconductor layer 11, the light emitting layer 13, and the second semiconductor layer 12 are removed.

  The first electrode 14 is electrically connected to the first semiconductor layer 11 on the second major surface 10a side. The second electrode 15 is electrically connected to the second semiconductor layer 12 on the second major surface 10a side. The first electrode 14 is, for example, an n-side electrode, and the second electrode 15 is, for example, a p-side electrode. In the light emitting unit 10 d, light (emitted light) is emitted from the light emitting layer 13 by supplying a current to the semiconductor stacked body 10 via the first electrode 14 and the second electrode 15.

In this manner, the light emitting unit 10d includes the first main surface 10b, the second main surface 10a opposite to the first main surface 10b, the first electrode 14 provided on the second main surface 10a, and the second main surface 10a. And an electrode 15.
The first conductive part 30 a is electrically connected to the first electrode 14. The first conductive portion 30a includes a first pillar portion 31a erected on the second main surface 10a. The first column part 31a includes at least a portion extending along the Z-axis direction, for example.

  The second conductive part 30 b is electrically connected to the second electrode 15. The second conductive portion 30b includes a second pillar portion 31b erected on the second main surface 10a. The second pillar portion 31b includes at least a portion extending along the Z-axis direction.

  The first insulating layer 21 is at least either between at least a part of the first column part 31 a and the semiconductor stacked body 10 and between at least a part of the second column part 31 b and the semiconductor stacked body 10. Provided.

  In this specific example, the first insulating layer 21 is provided between a part of the first column portion 31 a and the semiconductor stacked body 10.

  The first insulating layer 21 can be further provided between the first conductive portion 30 a and a part of the first electrode 14. In this specific example, the first insulating layer 21 is further provided between at least a part of the first column part 31 a of the first conductive part 30 a and a part of the first electrode 14. Note that the first insulating layer 21 is not provided on at least a part of the first electrode 14 in order to achieve electrical connection between the first conductive portion 30 a and the first electrode 14. The first insulating layer 21 has, for example, a first opening 20o1, and the first conductive part 30a and the first electrode 14 are electrically connected in the first opening 20o1. Note that the first opening 20 o 1 can include a hole penetrating the first insulating layer 21. However, the embodiment is not limited to this, and the first opening 20o1 is a part of the end of the first insulating layer 21 that is recessed from the end of the first electrode 14 to expose the first electrode 14 for convenience. Can be included. That is, the first opening 20o1 can include a portion of the first insulating layer 21 that exposes at least a part of the first electrode 14, and the shape thereof is arbitrary. The number of the first openings 20o1 is arbitrary.

  In this specific example, the direction of the side of the semiconductor stacked body 10 along the direction from the first column portion 31a to the second column portion 31b is set in the X-axis direction.

  Note that, as will be described later, the first insulating layer 21 may be further provided between the second conductive portion 30 b and a part of the second electrode 15. For example, the first insulating layer 21 may be further provided between at least a part of the second column part 31 b and a part of the second electrode 15.

  Note that the first insulating layer 21 is not provided on at least a part of the second electrode 15 in order to realize electrical connection between the second conductive portion 30 b and the second electrode 15. That is, the first insulating layer 21 has, for example, a second opening 20o2 on the second electrode 15 side, and the second conductive portion 30b and the second electrode 15 are electrically connected in the second opening 20o2. Is done.

  In addition, the thickness of the 1st insulating layer 21 shall be about 1 micrometer or more and 5 micrometers or less, for example. However, the embodiment is not limited to this, and the thickness of the first insulating layer 21 is arbitrary.

  The sealing unit 50 covers the side surface of the first conductive unit 30a and the side surface of the second conductive unit 30b. That is, the sealing part 50 covers the side surface of the first column part 31a and the side surface of the second column part 31b. The sealing unit 50 can cover the first insulating layer 21. The sealing part 50 exposes the first end face 31ae on the side opposite to the semiconductor stacked body 10 of the first conductive part 30a. The sealing part 50 exposes the second end face 31be on the side opposite to the semiconductor stacked body 10 of the second conductive part 30b. The first end surface 31ae is an end surface on the side opposite to the semiconductor stacked body 10 of the first pillar portion 31a. The second end surface 31be is an end surface on the side opposite to the semiconductor stacked body 10 of the second pillar portion 31b.

  The optical layer 60 is provided on the first main surface 10b side opposite to the second main surface 10a of the semiconductor stacked body 10. The optical layer 60 includes a phosphor layer 61 (wavelength conversion unit). The phosphor layer 61 absorbs the emitted light emitted from the light emitting layer 13 and emits light having a wavelength different from the wavelength of the emitted light.

  In this specific example, the optical layer 60 includes, for example, a phosphor layer 61 including a phosphor, and a light transmitting portion 62 provided between the phosphor layer 61 and the semiconductor stacked body 10. The translucent part 62 has translucency with respect to the emitted light emitted from the light emitting layer 13. The light transmitting part 62 can have an action of changing the traveling direction of light, such as a lens action or a refraction action. Thereby, the radiation angle and color shift of the light generated in the light emitting layer 13 can be adjusted. The translucent part 62 is provided as necessary, and the translucent part 62 can be omitted depending on circumstances.

  The phosphor layer 61 includes, for example, a translucent resin and a phosphor dispersed in the resin. The phosphor absorbs the emitted light emitted from the light emitting layer 13 and emits light having a wavelength different from the wavelength of the emitted light. The phosphor layer 61 can include a plurality of types of phosphors. As the phosphor, for example, a phosphor that emits an arbitrary color such as a phosphor that emits yellow light, a phosphor that emits green light, and a phosphor that emits red light can be used. The phosphor layer 61 can also include a plurality of stacked layers including phosphors having different wavelengths.

  In the semiconductor light emitting device 110, a current is supplied to the semiconductor stacked body 10 through the first conductive portion 30 a, the first electrode 14, the second conductive portion 30 b, and the second electrode 15. (Emitted light) is emitted. The emitted light can be, for example, light having a relatively short wavelength such as blue light, violet light, and ultraviolet light.

  For example, blue emission light emitted from the light emitting layer 13 travels inside the optical layer 60, and the wavelength is converted into, for example, yellow light by the phosphor layer 61. Then, for example, blue light emitted from the light emitting layer 13 and, for example, yellow light obtained from the phosphor layer 61 are combined. Thereby, the semiconductor light emitting device 110 can emit white light.

  The wavelength of the emitted light emitted from the light emitting layer 13 and the wavelength of the light converted by the phosphor layer 61 are arbitrary. The color of the light emitted from the semiconductor light emitting device 110 can be any color other than white.

  In this specific example, the light emitting unit 10 d further includes a protective layer 18 provided in a portion excluding the first electrode 14 and the second electrode 15 on the second main surface 10 a side of the semiconductor stacked body 10. The protective layer 18 covers the end portion of the semiconductor stacked body 10. An insulating material can be used for the protective layer 18. Thereby, for example, the insulation between the first electrode 14 and the second electrode 15 is improved. The protective layer 18 can also cover the entire end of the semiconductor stacked body 10. The protective layer 18 can also cover part of the end of the semiconductor stacked body 10. For example, silicon oxide can be used for the protective layer 18. However, the embodiment is not limited to this, and any insulating material can be used for the protective layer 18. The protective layer 18 is provided as necessary and can be omitted in some cases.

  The second electrode 15 can have a laminated structure. For example, the second electrode 15 can include a conductive layer and a reflective layer (not shown) provided between the conductive layer and the second semiconductor layer 12. Thereby, the light emitted from the light emitting layer 13 and traveling toward the second main surface 10a is reflected by the reflecting layer, and the light can efficiently travel toward the optical layer 60.

  In the specific example, the first conductive portion 30a further includes a first connection portion 32a. The first connection portion 32a covers at least a part of the surface of the first insulating layer 21 on the side opposite to the semiconductor stacked body 10, and electrically connects the first electrode 14 and the first column portion 31a. The first connection portion 32a can include, for example, a portion extending along the XY plane.

  Thus, when the first insulating layer 21 is provided between at least a part of the first column portion 31a and the semiconductor stacked body 10, the first conductive portion 30a further includes the first connection portion 32a. Can do.

  The second conductive part 30b may further include a second connection part 32b. The second connection part 32b electrically connects the second electrode 15 and the second column part 31b. The second connection part 32b can include, for example, a portion extending along the XY plane.

  That is, as will be described later, when the first insulating layer 21 is provided between at least a part of the second column portion 31 b and the semiconductor stacked body 10, the second conductive portion 30 b The semiconductor device may further include a second connection portion 32b that covers at least part of the surface opposite to the semiconductor stacked body 10 and electrically connects the second electrode 15 and the second column portion 31b.

  For the first column part 31a, the first connection part 32a, the second column part 31b, and the second connection part 32b, for example, a metal such as Cu (copper), Ni (nickel), and Al (aluminum) is used. Can do. However, the embodiment is not limited to this, and materials used for the first column part 31a, the first connection part 32a, the second column part 31b, and the second connection part 32b are arbitrary.

  For the sealing unit 50, for example, a resin such as an epoxy resin can be used. Resin used for the sealing part 50 can contain fillers, such as a quartz filler and an alumina filler, for example. Thereby, the heat conductivity of the sealing part 50 can be raised, and thereby heat dissipation can be improved, the temperature rise of a semiconductor laminated body can be suppressed, and luminous efficiency can be improved.

  The elastic modulus of the first insulating layer 21 can be set lower than the elastic modulus of the semiconductor stacked body 10. The elastic modulus of the first insulating layer 21 can be set lower than the elastic modulus of the first column part 31a and the elastic modulus of the second column part 31b.

For the first insulating layer 21, for example, a resin such as polyimide can be used.
That is, the semiconductor layer included in the semiconductor stacked body 10 is GaN, for example, and the elastic modulus of GaN is about 180 gigapascals (GPa). For example, the elastic modulus of Cu used for the first column part 31b and the second column part 31b is 110 GPa. The elastic modulus of polyimide used for the first insulating layer 21 is 2.8 GPa. As described above, when a resin such as polyimide is used as the first insulating layer 21, the elastic modulus of the first insulating layer 21 is the elastic modulus of the semiconductor stacked body 10, the elastic modulus of the first column portion 31a, and the second elastic modulus. It can be made significantly lower than the elastic modulus of the column part 31b.

  Thus, in the semiconductor light emitting device 110, the first insulation having an elastic modulus lower than the elastic modulus of the semiconductor stacked body 10 between the first column portion 31a of the first conductive portion 30a and the semiconductor stacked body 10. By providing the layer 21, the stress applied to the semiconductor stacked body 10 can be relaxed.

  For example, the linear expansion coefficient of the nitride semiconductor (for example, GaN) of the semiconductor stacked body 10 is 5.6 ppm / ° C., whereas the first conductive portion 30a and the second conductive portion 30b (for example, the first column portion 31a and The linear expansion coefficient of the metal (for example, Cu) used for the second pillar portion 31b) is 16.5 ppm / ° C. Therefore, for example, when the semiconductor layer of the semiconductor stacked body 10 and the metal of the first conductive portion 30a (first column portion 31a) are adjacent or close to each other, due to the difference in linear expansion coefficient between them, In some cases, a large stress is applied to the semiconductor stacked body 10, and thus desired characteristics may not be obtained, for example, the light emission efficiency of the light emitting layer 13 of the semiconductor stacked body 10 is lowered. In addition, reliability may be reduced.

  On the other hand, by providing the first insulating layer 21 having a low elastic modulus between the first pillar portion 31a and the semiconductor stacked body 10, the stress applied to the semiconductor stacked body 10 can be relaxed, and the decrease in the light emission efficiency is suppressed. And desired characteristics are obtained. Moreover, the fall of reliability can also be suppressed.

  For example, when the light emitting part is mounted on a lead frame or the like and is electrically connected by a technique such as wire bonding, the heat of the light emitting part is dissipated through the lead frame, and a large stress is applied to the semiconductor layer of the light emitting part. Joining doesn't matter much.

  In contrast, in the semiconductor light emitting device 110 according to the present embodiment, the semiconductor light emitting device 110 is electrically connected by the first pillar portion 31a and the second pillar portion 31b without using a lead frame or a wire. Is miniaturized. For example, in order to dissipate heat generated in the semiconductor stacked body 10 via the first pillar portion 31a and the second pillar portion 31b, the first cross-sectional area is close to or in contact with the semiconductor stacked body 10 and has a large cross-sectional area. A column portion 31a and a second column portion 31b are provided. In such a configuration, the stress due to the difference in linear expansion coefficient between the semiconductor stacked body 10 and the first column portion 31a and the second column portion 31b is likely to be applied to the semiconductor stacked body 10.

In the semiconductor light emitting device 110 according to the present embodiment, the stress applied to the semiconductor stacked body 10 is relieved by providing the first insulating layer 21 having a low elastic modulus between the first pillar portion 31 a and the semiconductor stacked body 10. To do. Thus, according to the semiconductor light emitting device 110, it is possible to provide a semiconductor light emitting device capable of relaxing the stress applied to the semiconductor layer and improving the light emission efficiency.
And this effect is exhibited especially effectively in the structure which implement | achieves size reduction by providing the 1st pillar part 31a and the 2nd pillar part 31b, and making an electrical connection through these.

That is, by adopting such a configuration, the semiconductor light emitting device 110 can be miniaturized.
For example, the size of the surface parallel to the XY plane of the semiconductor light emitting device 110 may be the minimum size of the bottom electrode type electronic component. For example, the plane parallel to the XY plane of the semiconductor light emitting device 110 can be a rectangle of 600 μm × 300 μm. For example, the outer shape of the semiconductor light emitting device 110 can be a rectangular parallelepiped of, for example, 600 μm × 300 μm × 300 μm. The plane parallel to the XY plane of the semiconductor light emitting device 110 can be a rectangle of 1000 μm × 500 μm. For example, the outer shape of the semiconductor light emitting device 110 can be a rectangular parallelepiped of, for example, 1000 μm × 500 μm × 500 μm. However, the embodiment is not limited to this, and the size and shape of the surface parallel to the XY plane of the semiconductor light emitting device 110 and the size and shape of the semiconductor light emitting device 110 are arbitrary.

  The first insulating layer 21 desirably has high heat resistance. That is, the first insulating layer 21 desirably has heat resistance to a temperature of about 260 ° C. in a solder reflow process, for example. The first insulating layer 21 is desirably highly insulating from the viewpoint of reliability and safety of the semiconductor light emitting device. For example, the first insulating layer 21 desirably has a high insulating property of 400 kV / mm or more. The first insulating layer 21 is desirably usable in a general semiconductor process. From this point of view, polyimide is preferably used for the first insulating layer 21.

Hereinafter, an example of the configuration of the semiconductor light emitting device 110 will be further described.
For the phosphor layer 61, for example, a resin in which phosphor particles that absorb light and emit light having a wavelength longer than the wavelength of the light can be used. For example, this phosphor absorbs at least one of blue light, violet light, and ultraviolet light, and emits light having a wavelength longer than that light (for example, green light, yellow light, and red light). To do. For example, a silicone resin is used as the resin mixed with the phosphor. The thickness of the phosphor layer 61 is, for example, 200 μm. As the silicone resin used for the phosphor layer 61, for example, methylphenyl silicone having a refractive index of about 1.5 can be used. However, the embodiment is not limited thereto, and the resin and the phosphor included in the phosphor layer 61 are arbitrary.

  As described above, the second electrode 15 can include a conductive layer and a reflective layer provided between the conductive layer and the second semiconductor layer 12. This reflective layer can contain, for example, at least one of Ag and Al. The thickness of the reflective layer can be set to 0.3 μm, for example. For example, the reflective layer can be provided in substantially the entire region of the second semiconductor layer 12 on the second main surface 10a side. Thereby, the emitted light emitted from the light emitting layer 13 can be efficiently reflected toward the first main surface 10b. However, the region where the reflective layer is provided is arbitrary. For example, the reflective layer may be provided in a partial region of the second semiconductor layer 12 on the second major surface 10a side.

  The second electrode 15 may further include a contact electrode layer provided between the reflective layer and the second semiconductor layer 12. The contact electrode layer can include, for example, an Au layer (gold layer) and a Ni layer (nickel layer) provided between the Au layer and the second semiconductor layer 12. Note that the thickness of the Ni layer can be 0.1 μm, and the thickness of the Au layer can be 0.1 μm.

The first electrode 14 can include, for example, an Au layer and a Ni layer provided between the Au layer and the first semiconductor layer 11. The thickness of the Au layer can be set to 0.1 μm, for example, and the thickness of the Ni layer can be set to 0.1 μm. For example, the first electrode 14 can be provided in substantially the entire region of the first semiconductor layer 11 on the second major surface 10a side. However, the region where the first electrode 14 is provided is arbitrary, and the first electrode 14 is provided on at least a part of the first semiconductor layer 11 on the second main surface 10a side.
The first electrode 14 may include a conductive layer and a reflective layer provided between the conductive layer and the first semiconductor layer 11. Thus, the 1st electrode 14 can have a laminated structure.
The conductive layer of the second electrode 15 can include, for example, an Au layer and a Ni layer provided between the Au layer and the second semiconductor layer 12. The thickness of the Au layer can be set to 0.1 μm, for example, and the thickness of the Ni layer can be set to 0.1 μm. For example, the second electrode 15 can be provided in substantially the entire region of the second semiconductor layer 12 on the second major surface 10a side. However, the region where the second electrode 15 is provided is arbitrary, and the second electrode 15 is provided on at least a part of the second semiconductor layer 12 on the second major surface 10a side.

  For the first connection part 32a included in the first conductive part 30a, for example, a metal such as Cu is used. The first connection part 32a may include a first layer and a second layer. The first layer is provided between the second layer and the first electrode 14. That is, the first layer is in contact with the first electrode 14. The first layer is, for example, a seed layer, and the second layer is, for example, a plating layer. The thickness of the first layer can be about 1 μm, for example. The thickness of the second layer can be set to 10 μm, for example.

  For example, a metal such as Cu is used for the second connection portion 32b included in the second conductive portion 30b. The second connection part 32b can include a third layer and a fourth layer. The third layer is provided between the fourth layer and the second electrode 15. That is, the third layer is in contact with the second electrode 15. The third layer is, for example, a seed layer, and the fourth layer is, for example, a plating layer. The third layer is the same layer as the first layer, and the same material as that used for the first layer can be used for the third layer. The fourth layer is the same layer as the second layer, and the same material as that used for the second layer can be used for the fourth layer. The thickness of the third layer can be about 1 μm, for example. The thickness of the fourth layer can be set to 10 μm, for example.

  However, the area, shape, and thickness of the first to fourth layers are arbitrary. The first connection part 32a and the second connection part 32b may be a single-layer thin film, or may be a laminated film as described above. The first connection portion 32a may further include other layers stacked on the first layer and the second layer. The second connection portion 32b may further include other layers stacked on the third layer and the fourth layer.

  For the first column part 31a and the second column part 31b, for example, a metal such as Cu can be used. The thickness (length along the Z-axis direction) of the first column part 31a and the second column part 31b can be set to, for example, about 60 μm. The 1st electrode 14 and the 1st pillar part 31a are electrically connected by the 1st connection part 32a. The second electrode 15 and the second column part 31b are electrically connected by the second connection part 32b.

  The material, cross-sectional shape, cross-sectional area, and thickness used for the first column part 31a and the second column part 31b are not limited to the above and are arbitrary.

  For the sealing portion 50, for example, a thermosetting resin can be used. The thickness of the sealing part 50 is approximately the same as the thickness of the first pillar part 31a and the second pillar part 31b, and is, for example, approximately 60 μm. The sealing part 50 exposes the first end face 31ae of the first conductive part 30a and the second end face 31be of the second conductive part 30b, while the side face of the first conductive part 30a (the side face of the first column part 31a and the side face). The side surface of the first connection portion 32a) and the side surface of the second conductive portion 30b (the side surface of the second column portion 31b and the side surface of the second connection portion 32b) are covered. The sealing part 50 can further cover the surfaces of the first connection part 32a and the second connection part 32b opposite to the semiconductor stacked body 10. Furthermore, the sealing unit 50 can cover the entire second main surface 10a side of the semiconductor stacked body 10.

Hereinafter, an example of a method for manufacturing the semiconductor light emitting device 110 will be described.
2A to FIG. 2E, FIG. 3A to FIG. 3E, and FIG. 4A to FIG. 4E are diagrams of the semiconductor light emitting device according to the first embodiment. It is process order typical sectional drawing which illustrates a manufacturing method.
That is, these drawings are cross-sectional views corresponding to the cross section taken along the line AA ′ of FIG.
This manufacturing method is a method for manufacturing a plurality of semiconductor light emitting devices 110 at a wafer level.

  As shown in FIG. 2A, a substrate 10s on which the semiconductor stacked body 10 is formed is used. For example, a sapphire substrate is used as the substrate 10s. The size of the substrate 10s is, for example, 4 inches in diameter, and the thickness of the substrate 10s is, for example, about 500 μm. In addition, the formation method of the semiconductor laminated body 10 is the following, for example. That is, a nitride semiconductor crystal film serving as the first semiconductor layer 11, a crystal film serving as the light emitting layer 13, and a crystal film serving as the second semiconductor layer 12 are epitaxially grown on the substrate 10s, and these crystal films are epitaxially grown. However, it is etched by, for example, RIE (Reactive Ion Etching), and a part of the first semiconductor layer 11 is exposed on the second main surface 10a side. Further, these crystal films are processed and individualized by, for example, RIE processing, and a plurality of semiconductor stacked bodies 10 are formed.

  Next, as illustrated in FIG. 2B, a film that becomes the first electrode 14 and the second electrode 15 is formed on the second main surface 10 a of the semiconductor stacked body 10, and the film is processed into a predetermined shape. Then, the first electrode 14 and the second electrode 15 are formed. Further, the protective layer 18 is formed. In FIG. 2B, the protective layer 18 is not shown in order to avoid complexity.

  Specifically, for example, a film to be a contact electrode layer is formed on the second main surface 10 a of the semiconductor stacked body 10. That is, a Ni film having a thickness of 0.1 μm is formed, and an Au film having a thickness of 0.1 μm is formed thereon. Thereby, a film to be a contact electrode layer is formed. For example, sputtering can be used to form the Ni film and the Au film. Further, a film to be a reflective layer is formed on the Au film. That is, as the film to be the reflective layer, a film containing at least one of Ag and Al, for example, having a thickness of 0.3 μm is formed. Also in this case, a sputtering method can be used. Thereby, a film to be a reflective layer is formed.

  Further, a conductive film to be a conductive layer for the first electrode 14 and the second electrode 15 is formed on the film to be the reflective layer. That is, for example, a 0.1 μm Ni film is formed on a film to be a reflective layer, and an Au film having a thickness of 0.1 μm is formed thereon. For example, a sputtering method can be used to form the Ni film and the Au film.

  The film that becomes the contact electrode layer, the film that becomes the reflective layer, and the conductive film that becomes the conductive layer of the first electrode 14 and the second electrode 15 are processed into a predetermined shape. Thereby, the first electrode 14 and the second electrode 15 are formed. In addition, arbitrary methods, such as a lift-off method, can be used for the processing of each film described above. Note that the contact electrode layer, the reflective layer, and the conductive layer of the first electrode 14 may have different pattern shapes. The contact electrode layer, the reflective layer, and the conductive layer of the second electrode 15 may have different pattern shapes.

Further, a SiO ₂ film having a thickness of 0.3 μm, for example, is formed by CVD, for example, in the region excluding at least a part of the first electrode 14 and excluding at least a part of the second electrode 15. Then, for example, the protective layer 18 is formed by processing by dry etching or wet etching.

  Next, as illustrated in FIG. 2C, at least a part of the first pillar part 31 a and at least a part of the second pillar part 31 b of the second main surface 10 a of the semiconductor stacked body 10 are at least. The first insulating layer 21 is formed in a region corresponding to one of them. In this specific example, the first insulating layer 21 is provided on the semiconductor stacked body 10 in a region corresponding to a part of the first pillar portion 31a. The first insulating layer 21 is formed in a region excluding at least a part of the first electrode 14 and excluding at least a part of the second electrode 15. In this specific example, the first insulating layer 21 is further provided between the plurality of semiconductor stacked bodies 10.

  For the first insulating layer 21, for example, polyimide or PBO (polybenzoxazole) is used. That is, for example, a polyimide film to be the first insulating layer 21 is formed on the entire second main surface 10a of the semiconductor stacked body 10, and, for example, exposure is performed using a mask and development is performed selectively. The first insulating layer 21 is formed. The processed first insulating layer 21 is baked as necessary.

  Thereafter, a conductive film that forms at least a part of the first conductive part 30a and at least a part of the second conductive part 30b is formed on the first insulating layer 21. The conductive film covers at least a part of the first electrode 14 that is not covered with the first insulating layer 21 and at least a part of the second electrode 15 that is not covered with the first insulating layer 21. Can be formed. Specifically, the following processing is performed.

  That is, as shown in FIG. 2D, for example, the first layer of the first connection portion 32a and the third layer of the second connection portion 32b are formed on the entire surface of the substrate 10s on the second main surface 10a side. A seed layer 33 is formed. The seed layer 33 is formed by, for example, a physical deposition method such as an evaporation method or a sputtering method. The seed layer 33 functions as a power feeding layer in a plating process described later. For the seed layer 33, for example, a laminated film of a Ti film and a Cu film can be used. The Ti layer of the seed layer 33 can increase the adhesion strength between the Cu film and the resist or pad (first electrode 14 and second electrode 15). The thickness of the Ti layer is, for example, about 0.2 μm. On the other hand, the Cu film of the seed layer 33 mainly contributes to power feeding. The thickness of the Cu film is preferably 0.2 μm or more.

  Next, as shown in FIG. 2E, a first resist layer 37 is formed in a region excluding regions corresponding to the first connection portion 32a and the second connection portion 32b. For the first resist layer 37, for example, a photosensitive liquid resist or a dry film resist can be used. The first resist layer 37 is formed by forming a film to be the first resist layer 37 and then performing exposure and development using a light shielding mask having a predetermined opening. Note that the first resist layer 37 is baked as necessary.

  Next, as shown in FIG. 3A, in the region where the first resist layer 37 is not provided, the second layer of the first connection portion 32a and the fourth layer of the second connection portion 32b, A connecting portion conductive film 32f is formed. The connection portion conductive film 32f is formed by, for example, an electroplating method. In the electroplating method, for example, the substrate 10s provided with the workpiece is immersed in a plating solution composed of copper sulfate and sulfuric acid, the seed layer 33 and the negative electrode of the DC power source are connected, and the substrate 10s. A Cu plate serving as an anode placed so as to face the surface to be plated is connected to an anode of a DC power source. Then, a current is passed between the negative electrode and the anode to perform Cu plating. In the plating process, the thickness of the plating film increases with the passage of time, and when the thickness of the plating film reaches the required thickness, the energization is stopped and the plating is completed. As a result, a connection portion conductive film 32 f made of a plating film is formed in the opening of the first resist layer 37.

  The seed layer 33 (first layer) at a position corresponding to the first electrode 14 and the connection portion conductive film 32f (second layer) at a position corresponding to the first electrode 14 form a first connection portion 32a. The seed layer 33 (third layer) at a position corresponding to the second electrode 15 and the connection portion conductive film 32f (fourth layer) at a position corresponding to the second electrode 15 form the second connection portion 32b.

  Thus, the seed layer 33 and the connection part conductive film 32f correspond to a conductive film that becomes at least part of the first conductive part 30a and at least part of the second conductive part 30b.

  The seed layer 33 and the connection portion conductive film 32 f to be the conductive film include at least a part of the first electrode 14 not covered with the first insulating layer 21 and the second electrode 15 not covered with the first insulating layer 21. Is formed so as to cover at least a part thereof.

  Thereafter, the first column portion 31a is formed on the first connection portion 32a, and the second column portion 31b is formed on the second connection portion 32b. Specifically, for example, the following processing is performed.

  As shown in FIG. 3B, the second resist layer 38 is formed in a region excluding regions corresponding to the first column portion 31a and the second column portion 31b. For the formation of the material used for the second resist layer 38 and the second resist layer 38, the materials and methods described with respect to the first resist layer 37 can be employed.

  Next, as illustrated in FIG. 3C, a columnar conductive film 31 f to be the first columnar portion 31 a and the second columnar portion 31 b is formed in a region where the second resist layer 38 is not provided. The columnar conductive film 31f is also formed by, for example, an electroplating method. For the formation of the columnar conductive film 31f, the materials and methods described with respect to the formation of the connection conductive film 32f can be applied. The columnar conductive film 31f connected to the first connection part 32a becomes the first columnar part 31a, and the columnar conductive film 31f connected to the second connection part 32b becomes the second columnar part 31b. The columnar conductive film 31f can be included in a conductive film that becomes at least a part of the first conductive part 30a and at least a part of the second conductive part 30b.

  Next, as shown in FIG. 3D, the first resist layer 37 and the second resist layer 38 are removed. Further, the exposed seed layer 33 is removed by acid cleaning, for example. The seed layer 33 covered with the connection portion conductive film 32f remains as the first layer and the third layer, and is included in the first connection portion 32a and the second connection portion 32b, respectively.

  Next, as illustrated in FIG. 3E, a resin layer 50 f serving as the sealing portion 50 is formed on the surface of the substrate 10 s on the second main surface 10 a side. For the resin layer 50f, for example, a thermosetting resin can be used. For example, a film that becomes the resin layer 50f is formed on the surface of the substrate 10s on the second main surface 10a side by a thickness such that the first column portion 31a and the second column portion 31b are buried by a technique such as printing. The resin layer 50f is formed by heating and curing. The heating condition for curing the resin layer 50f is, for example, about 150 ° C. and about 2 hours.

  Next, as shown in FIG. 4A, the surface of the resin layer 50f is ground to expose the first column portion 31a and the second column portion 31b. Thereby, the sealing part 50 is formed. In this grinding, along with the grinding of the resin layer 50f, a part of the first pillar part 31a and a part of the second pillar part 31b can be ground, whereby the first pillar part 31a can be ground. The first end surface 31ae and the second end surface 31be of the second pillar portion 31b are arranged in a plane including a surface on the side opposite to the second main surface 10a of the sealing portion 50.

  For the above grinding, for example, a rotary polishing wheel can be used. By rotational grinding, grinding can be performed while ensuring flatness. In addition, after grinding, drying is performed as necessary.

  Next, as illustrated in FIG. 4B, the substrate 10 s is removed from the semiconductor stacked body 10. That is, for example, a layer (for example, a GaN layer) included in the semiconductor stacked body 10 is irradiated with laser light from the surface of the substrate 10s opposite to the semiconductor stacked body 10 through the substrate 10s, and at least one of the layers is irradiated. The substrate 10s is separated from the semiconductor stacked body 10 by disassembling the part. As this laser beam, for example, a laser beam having a wavelength shorter than the forbidden bandwidth wavelength based on the forbidden bandwidth of GaN can be used. For example, a Nd: YAG triple harmonic laser can be used. However, the laser beam used is arbitrary.

  Next, as illustrated in FIG. 4C, in this specific example, a light transmitting portion 62 that is a part of the optical layer 60 is formed on the first main surface 10 b of the semiconductor stacked body 10. That is, for example, a liquid transparent resin layer is applied to the first main surface 10b of the semiconductor laminate 10 by printing or the like, a mold having a predetermined shape is pressed against the transparent resin layer, and the transparent resin layer is formed into a predetermined shape. After the deformation, the mold is released, and if necessary, at least one of heating and ultraviolet irradiation is applied and cured to form the light transmitting part 62. By adopting this method, the translucent part 62 having an arbitrary shape can be easily formed by using a mold having a desired shape.

  Next, as illustrated in FIG. 4D, a phosphor film 61 f that becomes the phosphor layer 61 is formed so as to cover the light transmitting portion 62. For example, the phosphor film 61f is formed by applying a resin material in which phosphor particles and a silicone resin are mixed by spin coating or printing so as to cover the light transmitting portion 62, and then heat-curing the resin material. Formed. As this resin material, for example, a material that is cured by heating at 150 ° C. for 1 hour is used.

  Then, as illustrated in FIG. 4E, the resin layer 50 f serving as the sealing portion 50 and the phosphor film 61 f serving as the phosphor layer 61 are cut to separate each of the plurality of semiconductor stacked bodies 10. . Thereby, the several semiconductor light-emitting device 110 can be manufactured collectively. For the above cutting, for example, a dicing method using a dicer can be employed.

  In the above manufacturing method, the electrodes, the sealing portion, and the optical layer can be formed collectively at the wafer level, and the productivity is high. In addition, inspection at the wafer level is also possible. Thereby, a semiconductor light emitting device can be manufactured with high productivity. Further, since members such as a lead frame, a conductive substrate, and a bonding wire are not required, the size can be easily reduced. Also, the cost can be reduced.

  In the step of separating the substrate 10s from the semiconductor stacked body 10 described with reference to FIG. 4B, a high temperature may be applied to the film that becomes the first insulating layer 21 in some cases. That is, when the semiconductor stacked body 10 is irradiated with laser light from the surface opposite to the semiconductor stacked body 10 of the substrate 10s through the substrate 10s, the first insulation is provided between the plurality of semiconductor stacked bodies 10. The film that becomes the layer 21 may be heated. In order to suppress deterioration of the film to be the first insulating layer 21 due to heating at this time, it is desirable to use a material having high heat resistance for the film to be the first insulating layer 21.

  For example, it is more desirable to use a resin having higher heat resistance than the resin used for the sealing portion 50 for the first insulating layer 21. That is, it is more desirable that the thermal decomposition temperature of the first insulating layer 21 is higher than the thermal decomposition temperature of the sealing portion 50. For example, polyimide having a thermal decomposition temperature of about 380 ° C. or higher can be used for the first insulating layer 21, and an epoxy resin having a thermal decomposition temperature of about 280 ° C. or higher and about 300 ° C. or lower is used for the sealing portion 50. Can be used. As the thermal decomposition temperature, for example, a temperature at which the weight is reduced by heating at a constant rate (for example, 5 percent) can be adopted.

  Moreover, when the film | membrane used as the 1st insulating layer 21 contains a filler, the defect resulting from a filler may generate | occur | produce by the high temperature added to the film | membrane used as the 1st insulating layer 21. FIG. In order to suppress this defect, it is desirable that the filler content included in the first insulating layer 21 is set lower than the filler content included in the sealing portion 50. For example, for the first insulating layer 21, polyimide that does not substantially contain a filler can be used.

FIG. 5A to FIG. 5C and FIG. 6A to FIG. 6C are schematic cross-sectional views illustrating the configuration of another semiconductor light emitting device according to the first embodiment. .
That is, these drawings are cross-sectional views corresponding to the cross section taken along the line AA ′ of FIG.

  As shown in FIG. 5A, in another semiconductor light emitting device 110a according to this embodiment, the light transmitting portion 62 has a convex lens shape.

Furthermore, the thickness of the translucent part 62 may be constant. That is, the translucent part 62 can have a function of suppressing temperature rise of the semiconductor stacked body 10 in addition to a lens function. That is, in the phosphor layer 61, a part of energy is absorbed and heat is generated at the time of wavelength conversion. However, by providing the light transmitting part 62 between the phosphor layer 61 and the semiconductor stacked body 10, 61 can be separated from the semiconductor stacked body 10, and an increase in temperature of the semiconductor stacked body 10 can be suppressed.
Thus, the shape of the translucent part 62 is arbitrary.

  As shown in FIG. 5B, in another semiconductor light emitting device 110b, the optical layer 60 is provided with the phosphor layer 61, but the light transmitting portion 62 is not provided. Thus, the translucent part 62 is provided as needed.

  As shown in FIG. 5C, in another semiconductor light emitting device 110 c according to this embodiment, the optical layer 60 includes a phosphor layer 61 including a phosphor, and the semiconductor laminate 10 of the phosphor layer 61. Has a hard film 63 provided on the opposite side. The hard film 63 has a hardness higher than that of the phosphor layer 61. The hard film 63 has translucency. For the hard film 63, for example, a silicone resin having high hardness can be used. For the formation of the hard film 63, for example, a spin coating method or a printing method can be employed. For the hard film 63, for example, silicon nitride or silicon oxide can be used. In this case, the hard film 63 is formed by a method such as sputtering. However, the material and forming method of the hard film 63 are arbitrary.

  By providing the hard film 63, a high hardness can be obtained on the light emitting surface of the semiconductor light emitting device 110c (the surface on the optical layer 60 side), so that the semiconductor light emitting device 110c can be handled easily, for example.

  For example, when the hardness of the silicone resin used for the phosphor layer 61 is low, if the phosphor layer 61 is exposed on the outermost surface of the optical layer 60 (the surface farthest from the semiconductor laminate 10), for example, a semiconductor When the light emitting device is picked up by a collet, the phosphor layer 61 may be in close contact with the collet and it may be difficult to perform proper mounting. At this time, by providing the hard film 63 having a hardness higher than that of the phosphor layer 61 on the phosphor layer 61, it becomes easier to implement good mounting.

  As shown in FIGS. 6A, 6B, and 6C, in the other semiconductor light emitting devices 110d, 110e, and 110f according to the present embodiment, the first connection portion 32a and the second connection are provided. The part 32b is not provided. Also in this case, there is provided a semiconductor light emitting device in which the first insulating layer 21 is provided between the first column portion 31a and the semiconductor stacked body 10 to relieve stress applied to the semiconductor layer and improve the light emission efficiency. can get.

  In the semiconductor light emitting device 110d illustrated in FIG. 6A, the light transmitting portion 62 has a convex lens shape. However, like the semiconductor light emitting device 110, the light transmitting portion 62 has a concave lens shape. It is good also as a shape. Further, the thickness of the translucent portion 62 may be constant.

  In addition, the semiconductor light emitting device 110e illustrated in FIG. 6B is an example in which the light transmitting portion 62 is omitted, and the semiconductor light emitting device 110f illustrated in FIG. 6C is described with reference to FIG. In this example, a hard film 63 is provided.

FIG. 7A and FIG. 7B are schematic views illustrating the configuration of another semiconductor light emitting device according to the first embodiment.
7B is a schematic plan view, and FIG. 7A is a cross-sectional view taken along the line BB ′ of FIG. 7B.

  As shown in FIGS. 7A and 7B, in the semiconductor light emitting device 111 according to this embodiment, the first insulating layer 21 includes at least a part of the first pillar portion 31 a and the semiconductor stacked body 10. And between the semiconductor stacked body 10 and at least a part of the second pillar portion 31b.

  Also in this case, the first insulating layer 21 can be further provided between the first conductive portion 30 a and a part of the first electrode 14. In this specific example, the first insulating layer 21 is further provided between at least a part of the first column part 31 a and a part of the first electrode 14. However, the first insulating layer 21 is not provided on at least a part of the first electrode 14 in order to realize electrical connection between the first conductive portion 30 a and the first electrode 14. The first insulating layer 21 has, for example, a first opening 20o1, and the first conductive part 30a and the first electrode 14 are electrically connected in the first opening 20o1.

  Furthermore, in this specific example, the first insulating layer 21 is further provided between the second conductive portion 30 b and a part of the second electrode 15. The first insulating layer 21 is not provided on at least a part of the second electrode 15 in order to achieve electrical connection between the second conductive portion 30 b and the second electrode 15. That is, the first insulating layer 21 has, for example, a second opening 20o2 on the second electrode 15 side, and the second conductive portion 30b and the second electrode 15 are electrically connected in the second opening 20o2. Is done. The second opening 20 o 2 includes a hole that penetrates the first insulating layer 21. For convenience, the second opening 20o2 may include a portion that recedes from the end of the second electrode 15 and exposes the second electrode 15. That is, the second opening 20o2 can include a portion of the first insulating layer 21 that exposes at least a part of the second electrode 15, and the shape thereof is arbitrary. The number of second openings 20o2 is arbitrary.

  Also in the semiconductor light emitting device 111 having such a configuration, the first insulating layer 21 is provided between the first column portion 31 a and the semiconductor stacked body 10 and between the second column portion 31 b and the semiconductor stacked body 10. By providing the semiconductor light emitting device, a stress applied to the semiconductor layer can be relaxed and the light emitting efficiency can be improved.

  In the semiconductor light emitting device 111, the first insulating layer 21 is provided both between the first column part 31 a and the semiconductor stacked body 10 and between the second column part 31 b and the semiconductor stacked body 10. It has been. That is, in the semiconductor light emitting device 111, the first insulating layer 21 is provided between the surface (for example, the entire surface) of the second pillar portion 31 b on the semiconductor stacked body 10 side and the second electrode 15. Thereby, the stress relaxation effect becomes larger.

  In the semiconductor light emitting device 110 and 110a to 110f already described, the first insulating layer 21 is provided between the first column portion 31a and the semiconductor stacked body 10, but the first insulating layer 21 is provided. Is not provided between the second pillar portion 31 b and the semiconductor stacked body 10. When the first insulating layer 21 has a low elastic modulus, for example, polyimide, the heat conductivity of the polyimide is relatively low, and thus the heat dissipation is reduced by providing the first insulating layer 21 for stress relaxation. There is.

  Therefore, as in the semiconductor light emitting device 110 and 110a to 110f, the first insulating layer 21 is provided between the first column portion 31a and the semiconductor stacked body 10, and the second column portion 31b and the semiconductor stacked body 10 are provided. As a configuration that is not provided between the two, a configuration that improves both the characteristics of stress relaxation and heat dissipation can be employed. Further, like the semiconductor light emitting device 111, the first insulating layer 21 is provided both between the first column portion 31 a and the semiconductor stacked body 10 and between the second column portion 31 b and the semiconductor stacked body 10. Further, it is possible to adopt a configuration that greatly improves the stress relaxation characteristics. Thus, from the viewpoints of stress relaxation and heat dissipation, the region where the first insulating layer 21 is provided can be appropriately set.

  In addition, the structure which provides the 1st insulating layer 21 in both between the 1st pillar part 31a and the semiconductor laminated body 10 and between the 2nd pillar part 31b and the semiconductor laminated body 10 is the semiconductor light-emitting device 110a. It can be applied to any of ~ 110f.

FIG. 8 is a schematic perspective view illustrating the configuration of another semiconductor light emitting device according to the first embodiment.
FIG. 9A, FIG. 9B, and FIG. 9C are schematic views illustrating the configuration of another semiconductor light emitting device according to the first embodiment.
9C is a schematic plan view, FIG. 9A is a cross-sectional view taken along the line CC ′ of FIG. 9C, and FIG. 9B is a cross-sectional view of FIG. It is DD 'line sectional drawing of.
FIG. 10A, FIG. 10B, FIG. 10C, and FIG. 10D are schematic views illustrating the configuration of the elements of another semiconductor light emitting device according to the first embodiment.
That is, these drawings are diagrams illustrating pattern shapes when viewed along the Z-axis direction of components included in another semiconductor light emitting device 112 according to this embodiment. 10A illustrates the pattern shape of the first electrode 14 and the second electrode 15, FIG. 10B illustrates the pattern shape of the first insulating layer 21, and FIG. The pattern shape of the 1st connection part 32a and the 2nd connection part 32b is illustrated, and FIG.10 (d) has illustrated the pattern shape of the 1st pillar part 31a and the 2nd pillar part 31b.

  As shown in FIGS. 8 and 9A to 9C, in the other semiconductor light emitting device 112 according to this embodiment, two second pillar portions 31b are provided. And the shape when the semiconductor light-emitting device 112 and the semiconductor laminated body 10 are seen from the Z-axis direction is substantially square.

  A first connection member 72a is provided at the end of the first conductive portion 30a opposite to the semiconductor stacked body 10 of the first column portion 31a, and the semiconductor stack of the second column portion 31b of the second conductive portion 30b. A second connection member 72b is provided at the end opposite to the body 10. Solder can be used for the first connection member 72a and the second connection member 72b. The first connection member 72a and the second connection member 72b may be omitted. A surface layer is formed on the first end surface 31ae (the portion in contact with the first connecting member 72a) of the first column portion 31a and the first end surface 31be (the portion in contact with the second connecting member 72b) of the second column portion 31b. It may be provided. As this surface layer, for example, a layer subjected to at least one of treatments such as water-soluble preflux, electroless Ni / Aju plating, and AuSn plating can be used. Thereby, the wettability with the solder in the first end face 31ae and the second end face 31be can be improved, and the mountability is improved.

  Also in this specific example, the optical layer 60 includes the phosphor layer 61 and may further include the light transmitting portion 62 and the hard film 63.

  As shown in FIG. 10A, the first electrode 14 is provided in the vicinity of the central portion of one side of the semiconductor stacked body 10. On the other hand, the second electrode 15 is provided in a region of the semiconductor stacked body 10 excluding the first electrode 14. The area of the second electrode 15 is larger than the area of the first electrode 14. As a result, heat dissipation is improved, current injection efficiency is improved, and light emission efficiency can be improved.

  As shown in FIGS. 10B and 9A, the first insulating layer 21 is provided with a first opening 20o1 and a plurality of second openings 20o2. One pattern shape of the plurality of second openings 20o2 is, for example, a substantially square of 10 μm × 10 μm.

  As illustrated in FIG. 9A, at least a part of the first electrode 14 is exposed through the first opening 20o1. As illustrated in FIG. 9B, a part of the second electrode 15 is exposed through the plurality of second openings 20o2.

  As shown in FIG. 10C and FIG. 9A, the first connection portion 32a has a pattern shape that covers at least a part of the first electrode 14 exposed from the first opening 20o1. . 10C and 9B, the second connection portion 32b has a pattern shape that covers a part of the second electrode 15 exposed from the plurality of second openings 20o2. is doing.

  As shown in FIG. 10D, the first pillar portion 31 a has a pattern shape that overlaps with the first connection portion 32 a when viewed along the Z-axis direction. As shown in FIG. 10D, the second column portion 31b has a pattern shape that overlaps with the second connection portion 32b when viewed along the Z-axis direction.

  By adopting such a pattern shape, the first pillar portion 31a is electrically connected to the first electrode 14 exposed from the first opening 20o1 via the first connection portion 32a. And the 2nd pillar part 31b is electrically connected with the 2nd electrode 15 exposed from several 2nd opening part 20o2 via the 2nd connection part 32b.

  In this specific example, the first insulating layer 21 is provided between the surface of the first pillar portion 31 a on the semiconductor stacked body 10 side (for example, the entire surface) and the semiconductor stacked body 10. The first insulating layer 21 is further provided between the surface (for example, the entire surface) of the second pillar portion 31 b on the semiconductor stacked body 10 side and the semiconductor stacked body 10. Specifically, the first insulating layer 21 is provided between the surface (for example, the entire surface) of the second pillar portion 31 b on the semiconductor stacked body 10 side and the second electrode 15.

  As described above, by providing the first insulating layer 21 immediately below the first column portion 31a and directly below the second column portion 31b, both the first column portion 31a and the second column portion 31b are supported. In the region, stress applied to the semiconductor layer can be relaxed.

FIG. 11A, FIG. 11B, and FIG. 11C are schematic views illustrating the configuration of another semiconductor light emitting device according to the first embodiment.
11 (c) is a schematic plan view, FIG. 11 (a) is a cross-sectional view taken along the line EE ′ of FIG. 11 (c), and FIG. 11 (b) is FIG. 11 (c). It is FF 'line sectional drawing of.
12A, 12 </ b> B, 12 </ b> C, and 12 </ b> D are schematic views illustrating the configuration of elements of another semiconductor light emitting device according to the first embodiment.
That is, these drawings are diagrams illustrating pattern shapes when viewed along the Z-axis direction of components included in another semiconductor light emitting device 112a according to this embodiment. 12A to 12D show the pattern shapes of the first electrode 14 and the second electrode 15, the pattern shape of the first insulating layer 21, the pattern shapes of the first connection portion 32a and the second connection portion 32b, And the pattern shape of the 1st pillar part 31a and the 2nd pillar part 31b is illustrated, respectively.

  As shown in FIGS. 11A to 11C, the semiconductor light emitting device 112a also includes two second pillar portions 31b.

  As illustrated in FIG. 12A, the pattern shapes of the first electrode 14 and the second electrode 15 are the same as those of the semiconductor light emitting device 112, and thus description thereof is omitted.

  As shown in FIG. 12B, in the semiconductor light emitting device 112a, the first insulating layer 21 is provided with one first opening 20o1 and one second opening 20o2. And the 1st insulating layer 21 is not provided in the area | region in which the 2nd pillar part 31b is provided. That is, the second opening 20o2 is disposed in the region where the second pillar portion 31b is provided.

  As illustrated in FIG. 11A, at least a part of the first electrode 14 is exposed through the first opening 20o1. As illustrated in FIG. 11B, a part of the second electrode 15 is exposed through the second opening 20o2.

  As shown in FIG. 12C and FIG. 11A, the first connection portion 32a has a pattern shape that covers at least a part of the first electrode 14 exposed from the first opening 20o1. . 12C and 11B, the second connection portion 32b has a pattern shape that covers a part of the second electrode 15 exposed from the second opening 20o2. Yes. In this case, a substantially entire surface of the second connection portion 32 b is directly connected to the second electrode 15 of the semiconductor stacked body 10.

  As shown in FIG. 12D, the first column portion 31 a has a pattern shape that overlaps with the first connection portion 32 a when viewed along the Z-axis direction. And as represented to FIG.12 (d), the 2nd pillar part 31b has a pattern shape which overlaps with the 2nd connection part 32b, when it sees along a Z-axis direction.

  By adopting such a pattern shape, the first pillar portion 31a is electrically connected to the first electrode 14 exposed from the first opening 20o1 via the first connection portion 32a. The second column part 31b is electrically connected to the second electrode 15 exposed from the second opening 20o2 via the second connection part 32b.

  Also in this specific example, the first insulating layer 21 is provided between the surface of the first pillar portion 31 a on the semiconductor stacked body 10 side (for example, the entire surface) and the semiconductor stacked body 10. Thereby, in the part of the 1st pillar part 31a, the stress added to a semiconductor layer can be relieved. In the specific example, the first insulating layer 21 is not provided between the second column portion 31 b and the semiconductor stacked body 10. For this reason, the 2nd pillar part 31b opposes the semiconductor laminated body 10 through the 2nd connection part 32b, without passing through the 1st insulating layer 21. FIG. For this reason, the semiconductor stacked body 10 and the second conductive part 30b (second connection part 32b and second column part 31b) are thermally connected (via the second electrode 15). Thermal resistance can be reduced and heat dissipation can be improved.

  Thus, the structure which provides the 1st insulating layer 21 in both between the 1st pillar part 31a and the semiconductor laminated body 10 and between the 2nd pillar part 31b and the semiconductor laminated body 10 (for example, semiconductor light emission) The configuration of the device 112) and the first insulating layer 21 are provided between the first column portion 31a and the semiconductor stacked body 10 and are not provided between the second column portion 31b and the semiconductor stacked body 10 (for example, The configuration of the semiconductor light emitting device 112a) is appropriately selected according to desired characteristics regarding stress relaxation and heat dissipation improvement.

FIG. 13A, FIG. 13B, and FIG. 13C are schematic views illustrating the configuration of another semiconductor light emitting device according to the first embodiment.
13C is a schematic plan view, FIG. 13A is a cross-sectional view taken along the line GG ′ of FIG. 13C, and FIG. 13B is a cross-sectional view of FIG. It is a HH 'sectional view taken on the line.
FIG. 14A, FIG. 14B, FIG. 14C, and FIG. 14D are schematic views illustrating the configuration of elements of another semiconductor light emitting device according to the first embodiment.
That is, these drawings are diagrams illustrating pattern shapes when viewed along the Z-axis direction of components included in another semiconductor light emitting device 112b according to this embodiment. 14A to 14D show the pattern shapes of the first electrode 14 and the second electrode 15, the pattern shape of the first insulating layer 21, the pattern shapes of the first connection portion 32a and the second connection portion 32b, And the pattern shape of the 1st pillar part 31a and the 2nd pillar part 31b is illustrated, respectively.

  As shown in FIGS. 13A to 13C, the semiconductor light emitting device 112b is also provided with two second pillar portions 31b.

  As shown in FIG. 14B, in the semiconductor light emitting device 112b, the first insulating layer 21 is provided between the first column portion 31a and the semiconductor stacked body 10 and between the second column portion 31b and the semiconductor stacked body. The first insulating layer 21 is not provided in any region other than the region facing the first column part 31a and the second column part 31b. Except this, it can be the same as that of the semiconductor light emitting device 112, and the description is omitted.

  As described above, the first connection portion 21 is at least between the first pillar portion 31a and the semiconductor stacked body 10 and at least between the second pillar portion 31b and the semiconductor stacked body 10. It suffices if the first connecting portion 21 is provided in any one of the regions, and the first connecting portion 21 may not be provided in a region other than the region facing the first column portion 31a and the second column portion 31b.

(Second Embodiment)
FIG. 15A, FIG. 15B, and FIG. 15C are schematic views illustrating the configuration of the semiconductor light emitting device according to the second embodiment.
15C is a schematic plan view, FIG. 15A is a cross-sectional view taken along the line II ′ of FIG. 15C, and FIG. 15B is a cross-sectional view of FIG. It is JJ 'line sectional drawing of.
FIG. 16A, FIG. 16B, FIG. 16C, and FIG. 16D are schematic views illustrating the configuration of the elements of the semiconductor light emitting device according to the second embodiment.
That is, these drawings are diagrams illustrating pattern shapes when viewed along the Z-axis direction of the components included in the semiconductor light emitting device 120 according to this embodiment. 16 (a) to 16 (d) show the pattern shapes of the first electrode 14 and the second electrode 15, the pattern shape of the first insulating layer 21, the pattern shapes of the first connection portion 32a and the second connection portion 32b, And the pattern shape of the 1st pillar part 31a and the 2nd pillar part 31b is illustrated, respectively.

  As shown in FIGS. 15A to 15C, the semiconductor light emitting device 120 is also provided with two second pillar portions 31 b.

  As shown in FIG. 16B, in the semiconductor light emitting device 120, the first insulating layer 21 is provided between the first pillar portion 31a and the semiconductor stacked body 10, and the second pillar portion 31b and the semiconductor. It is provided in a region between the stacked body 10.

  Furthermore, as shown in FIG. 15B and FIG. 16B, the second insulating layer 22 is provided on the first main surface of the semiconductor stacked body 10. The second insulating layer 22 is provided in a region where the first insulating layer 21 is not provided in the first main surface 10b.

  In this specific example, the first insulating layer 21 is not provided in a region other than a region facing the first column portion 31a and the second column portion 31b. And the 2nd insulating layer 22 is provided in the area | region except the area | region which opposes the 1st pillar part 31a in the 2nd main surface 10a. The second insulating layer 22 is provided in a region excluding a region facing the second pillar portion 31b on the second main surface 10a.

  The second insulating layer 22 has a thermal conductivity higher than that of the first insulating layer 21. For example, an organic material is used for the first insulating layer 21 and an inorganic material is used for the second insulating layer 22. For the first insulating layer 21, for example, an organic material to which a small amount of an inorganic substance is added may be used.

  For example, polyimide is used as the first insulating layer 21, and alumina is used as the second insulating layer 22. The thermal conductivity of polyimide is, for example, about 0.15 W / (m · K), and the thermal conductivity of alumina is about 38 W / (m · K). In addition, this embodiment is not restricted to this, For the 2nd insulating layer 22, the arbitrary insulating materials whose heat conductivity is higher than the material used for the 1st insulating layer 21 can be used.

  As described above, the semiconductor light emitting device 120 is provided in a region where the first insulating layer 21 is not provided on the second main surface 10a of the semiconductor stacked body 10, and has a heat higher than the thermal conductivity of the first insulating layer 21. A second insulating layer 22 having conductivity is further provided. In order to realize the electrical connection between the first electrode 14 and the first conductive portion 30a and the electrical connection between the second electrode 15 and the second conductive portion 30b, the second insulating layer 22 includes: They are not provided on at least part of the first electrode 14 and on at least part of the second electrode 15.

  That is, the first insulating layer 21 having an elastic modulus lower than that of the semiconductor stacked body 10 is provided between the first column portion 31 a and the semiconductor stacked body 10 and between the second column portion 31 b and the semiconductor stacked body 10. By providing the second insulating layer 22 having a high thermal conductivity while relaxing the stress applied to the semiconductor stacked body 10, the heat of the semiconductor stacked body 10 can be efficiently dissipated. Thereby, heat dissipation can be improved while relaxing the stress applied to the semiconductor layer. Thereby, for example, the luminous efficiency can be further improved.

  The second insulating layer 22 can be provided in any of the semiconductor light emitting devices 110, 110a to 110f, 112, 112a, and 112b according to the first embodiment, and the same effect can be exhibited.

(Third embodiment)
FIG. 17 is a flowchart illustrating the method for manufacturing the semiconductor light emitting device according to the third embodiment.
The present embodiment is a method of manufacturing any one of the semiconductor light emitting devices according to the above embodiments. That is, this manufacturing method includes a semiconductor stacked body 10 having a first main surface 10b and a second main surface 10a opposite to the first main surface 10b, and a second main surface 10a of the semiconductor stacked body 10. A light emitting portion 10d including the first electrode 14 and the second electrode 15 provided, and a first column portion 31a electrically connected to the first electrode 14 and erected on the second main surface 10a. The first conductive portion 30a including the second conductive portion 30b including the second column portion 31b that is electrically connected to the second electrode 15 and is erected on the second main surface 10a, and the first column portion 31a. A first insulating layer 21 provided between at least a part of the semiconductor stacked body 10 and at least one of the second pillar portion 31b and the semiconductor stacked body 10; A sealing portion 50 covering the side surface of the conductive portion 30a and the side surface of the second conductive portion 30b; The wavelength conversion unit (phosphor layer 61) is an optical layer provided on the first main surface 10b, which absorbs the emitted light emitted from the light emitting layer 13 and emits light having a wavelength different from the wavelength of the emitted light. And an optical layer 60 including a semiconductor light emitting device. The semiconductor stacked body 10 includes a first conductivity type first semiconductor layer 11 provided on the first main surface 10b side and a second conductivity type second semiconductor layer 12 provided on the second main surface 10a side. And a light emitting layer 13 provided between the first semiconductor layer 11 and the second semiconductor layer 12. In the semiconductor stacked body 10, the second semiconductor layer 12 and the light emitting layer 13 are selectively removed, and a part of the first semiconductor layer 11 is exposed on the second main surface 10a. The first electrode 14 is electrically connected to the first semiconductor layer 11 on the second main surface 10a side, and the second electrode 15 is electrically connected to the second semiconductor layer 12 on the second main surface 10a side. Is done.

  As illustrated in FIG. 17, the method for manufacturing the semiconductor light emitting device according to the present embodiment includes at least a part of the first column portion 31 a and the second column portion 31 b on the second main surface 10 a of the semiconductor stacked body 10. The first insulating layer 21 is formed in a region corresponding to at least a part of (Step S110). That is, for example, the processing described in regard to FIG.

  As already described, the first insulating layer 21 can be formed in a region excluding at least a part of the first electrode 14 and excluding at least a part of the second electrode 15. The first insulating layer 21 can be further provided between the plurality of semiconductor stacked bodies 10.

  Then, as illustrated in FIG. 15, a conductive film that forms at least a part of the first conductive part 30 a and at least a part of the second conductive part 30 b is formed on the first insulating layer 21 (Step S <b> 120). That is, for example, the processing described with reference to FIGS. 2D, 2E, and 3A is performed.

  That is, step S120 includes, for example, a step of forming the seed layer 33, a step of forming the first resist layer 37 in a region excluding the regions corresponding to the first connection portion 32a and the second connection portion 32b, and the first resist In the region where the layer 37 is not provided, a step of forming the connection portion conductive film 32f to be the second layer of the first connection portion 32a and the fourth layer of the second connection portion 32b can be included.

  As already described, at least a part of the first conductive part 30a and a conductive film that becomes at least a part of the second conductive part 30b are not covered by the first insulating layer 21. It can be formed so as to cover at least a part and at least a part of the second electrode 15 not covered with the first insulating layer 21.

  Thereby, the semiconductor light-emitting device which can relieve | moderate the stress added to a semiconductor layer and can improve luminous efficiency can be manufactured.

  And as already demonstrated, formation of said 1st insulating layer 21 (step S110) and formation of said electrically conductive film (step S120) are in the board | substrate 10s with which the several semiconductor laminated body 10 was provided. It can be carried out collectively for a plurality of semiconductor laminates 10. As a result, a semiconductor light emitting device capable of relaxing the stress applied to the semiconductor layer and improving the light emission efficiency can be manufactured with high productivity.

  When the connection conductive film 32f is omitted as in the semiconductor light emitting devices 110d, 110e, and 110f described with reference to FIGS. 6A to 6C, the first conductive part 30a in step S120 is omitted. At least a part of the conductive film that becomes at least a part of the second conductive part 30b is formed in the step of forming the first pillar part 31a and the second pillar part 31b (for example, with reference to FIGS. 3B and 3C). This corresponds to the process described above. Also in this method, it is possible to manufacture a semiconductor light emitting device capable of relaxing the stress applied to the semiconductor layer and improving the light emission efficiency.

  In the case of manufacturing the semiconductor light emitting device 120 according to the second embodiment, this manufacturing method is, for example, before forming the first insulating layer 21, the first insulation of the second main surface 10 a of the semiconductor stacked body 10. The process of forming the 2nd insulating layer 22 in the area | region except the area | region in which the layer 21 is formed can be further provided. That is, first, the second insulating layer 22 such as alumina is formed in a region of the second main surface 10a of the semiconductor stacked body 10 excluding a region where the first insulating layer 21 is formed. The second insulating layer 22 is provided in a region excluding at least a part of the first electrode 14 and excluding at least a part of the second electrode 15. Thereafter, step S110 for forming the first insulating layer 21 is performed. Thereby, the semiconductor light emitting device 120 can be manufactured.

Examples of the red phosphor include the following. However, the red phosphor used in the embodiment is not limited to this.
Y ₂ O ₂ S: Eu,
Y ₂ O ₂ S: Eu + pigment,
Y ₂ O ₃ : Eu,
Zn ₃ (PO ₄ ) ₂ : Mn,
(Zn, Cd) S: Ag + In ₂ O ₃ ,
(Y, Gd, Eu) BO ₃ ,
(Y, Gd, Eu) ₂ O ₃ ,
YVO ₄ : Eu,
La ₂ O ₂ S: Eu, Sm,
LaSi ₃ N ₅ : Eu ²⁺ ,
α-sialon: Eu ²⁺ ,
CaAlSiN ₃ : Eu ²⁺ ,
CaSiN _X : Eu ²⁺ ,
CaSiN _X : Ce ²⁺ ,
M ₂ Si ₅ N ₈ : Eu ²⁺ ,
CaAlSiN ₃ : Eu ²⁺ ,
(SrCa) AlSiN ₃ : Eu ^{X +} ,
_{Sr x (Si y Al 3)} z (O x N): Eu X +.

Examples of the green phosphor include the following. However, the green phosphor used in the embodiment is not limited to this.
ZnS: Cu, Al,
ZnS: Cu, Al + pigment,
(Zn, Cd) S: Cu, Al,
ZnS: Cu, Au, Al, + pigment,
Y ₃ Al ₅ O ₁₂ : Tb,
Y ₃ (Al, Ga) ₅ O ₁₂ : Tb,
Y ₂ SiO ₅ : Tb,
Zn ₂ SiO ₄ : Mn,
(Zn, Cd) S: Cu,
ZnS: Cu,
Zn ₂ SiO ₄ : Mn,
ZnS: Cu + Zn ₂ SiO ₄ : Mn,
Gd ₂ O ₂ S: Tb,
(Zn, Cd) S: Ag,
ZnS: Cu, Al,
Y ₂ O ₂ S: Tb,
ZnS: Cu, Al + In ₂ O ₃ ,
(Zn, Cd) S: Ag + In ₂ O ₃ ,
(Zn, Mn) ₂ SiO ₄ ,
BaAl ₁₂ O ₁₉ : Mn
(Ba, Sr, Mg) O.aAl ₂ O ₃ : Mn,
LaPO ₄ : Ce, Tb,
Zn ₂ SiO ₄ : Mn,
ZnS: Cu,
3 (Ba, Mg, Eu, Mn) O.8Al ₂ O ₃ ,
_{La 2 O 3 · 0.2SiO 2 ·} 0.9P 2 O 5: Ce, Tb,
CeMgAl ₁₁ O ₁₉ : Tb,
CaSc ₂ O ₄ : Ce,
(BrSr) SiO ₄ : Eu,
α-sialon: Yb ²⁺ ,
β-sialon: Eu ²⁺ ,
(SrBa) YSi ₄ N ₇ : Eu ²⁺ ,
(CaSr) Si ₂ O ₄ N ₇ : Eu ²⁺ ,
Sr (SiAl) (ON): Ce.

Examples of the blue phosphor include the following. However, the blue phosphor used in the embodiment is not limited to this.
ZnS: Ag,
ZnS: Ag + pigment,
ZnS: Ag, Al,
ZnS: Ag, Cu, Ga, Cl,
ZnS: Ag + In ₂ O ₃ ,
ZnS: Zn + In ₂ O ₃ ,
(Ba, Eu) MgAl ₁₀ O ₁₇ ,
(Sr, Ca, Ba, Mg) ₁₀ (PO ₄ ) 6 Cl ₂ : Eu,
Sr ₁₀ (PO ₄ ) 6Cl ₂ : Eu,
(Ba, Sr, Eu) (Mg, Mn) Al ₁₀ O ₁₇ ,
10 (Sr, Ca, Ba, Eu) · 6PO ₄ · Cl ₂ ,
_{BaMg 2 Al 16 O 25: Eu} .

Examples of the yellow phosphor include the following. However, the yellow phosphor used in the embodiment is not limited to this.
Li (Eu, Sm) W ₂ O ₈ ,
(Y, Gd) ₃ , (Al, Ga) ₅ O ₁₂ : Ce ³⁺ ,
Li ₂ SrSiO ₄ : Eu ²⁺ ,
(Sr (Ca, Ba)) ₃ SiO ₅ : Eu ²⁺ ,
SrSi ₂ ON _2.7 : Eu ²⁺ .

In this specification, “nitride semiconductor” means B _x In _y Al _z Ga _1-xyz N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, x + y + z ≦ 1) Semiconductors having all compositions in which the composition ratios x, y, and z are changed within the respective ranges are included. Furthermore, in the above chemical formula, those that further include a group V element other than N (nitrogen), and those that further include any of various dopants added to control the conductivity type, etc. Shall be included.

  As described above, according to the embodiment, it is possible to provide a semiconductor light emitting device that can relieve stress applied to the semiconductor layer and improve the light emission efficiency, and a method for manufacturing the same.

  In the present specification, “vertical” and “parallel” include not only strictly vertical and strictly parallel, but also include, for example, variations in the manufacturing process, and may be substantially vertical and substantially parallel. is good.

The embodiments of the present invention have been described above with reference to specific examples. However, the embodiments of the present invention are not limited to these specific examples. For example, a semiconductor layer, a light emitting layer, an electrode, a conductive layer, a reflective layer, and a contact electrode layer included in the light emitting portion, and a conductive portion, a column portion, a connection portion, an insulating layer, a sealing portion, an optical included in the semiconductor light emitting device The specific configuration of each element such as the layer, the wavelength conversion unit, the phosphor layer, the phosphor, the light transmission unit, and the hard film is similarly implemented by appropriately selecting from a known range by those skilled in the art. As long as the same effect can be obtained, it is included in the scope of the present invention.
Moreover, what combined any two or more elements of each specific example in the technically possible range is also included in the scope of the present invention as long as the gist of the present invention is included.

  In addition, all semiconductor light-emitting devices and methods for manufacturing the same that can be implemented by those skilled in the art based on the semiconductor light-emitting devices and methods for manufacturing the same described above as embodiments of the present invention are also included in the implementation of the present invention. As long as the gist of the form is included, it belongs to the scope of the present invention.

  In addition, in the category of the idea of the present invention, those skilled in the art can conceive of various changes and modifications, and it is understood that these changes and modifications also belong to the scope of the present invention. .

  DESCRIPTION OF SYMBOLS 10 ... Semiconductor laminated body, 10a ... 2nd main surface, 10b ... 1st main surface, 10d ... Light emission part, 10s ... Substrate, 11 ... 1st semiconductor layer, 12 ... 2nd semiconductor layer, 13 ... Light emission layer, 14 ... 1st electrode, 15 ... 2nd electrode, 18 ... Protective layer, 20o1, 20o2 ... 1st and 2nd opening part, 21 ... 1st insulating layer, 22 ... 2nd insulating layer, 30a ... 1st electroconductive part, 30b ... 2nd electroconductive part, 31a ... 1st pillar part, 31ae ... 1st end surface, 31b ... 2nd pillar part, 31be ... 2nd end surface, 31f ... Column part electrically conductive film, 32a ... 1st connection part, 32b ... 2nd connection Part, 32f ... conductive film of connection part, 33 ... seed layer, 37 ... first resist layer, 38 ... second resist layer, 50 ... sealing part, 50f ... resin layer, 60 ... optical layer, 61 ... phosphor layer ( Wavelength conversion part), 61f ... phosphor film, 62 ... translucent part 63 ... Hard film, 72a, 72b ... First and second connecting members, 110, 110a to 110f, 111, 112, 112a, 112b, 120 ... Semiconductor light emitting device

Claims (15)

A semiconductor stacked body having a first main surface and a second main surface opposite to the first main surface, and a first electrode and a second electrode provided on the second main surface of the semiconductor stacked body A light emitting unit including:
A first conductive portion that is electrically connected to the first electrode and includes a first pillar portion erected on the second main surface;
A second conductive portion including a second pillar portion electrically connected to the second electrode and erected on the second main surface;
A first insulating layer provided at least either between at least a part of the first pillar part and the semiconductor stacked body or between at least a part of the second pillar part and the semiconductor stacked body. When,
A sealing portion covering a side surface of the first conductive portion and a side surface of the second conductive portion;
A wavelength conversion unit that is an optical layer provided on the first main surface of the semiconductor stacked body and that absorbs emitted light emitted from the light emitting layer and emits light having a wavelength different from the wavelength of the emitted light. The optical layer comprising:
A semiconductor light emitting device comprising:   The semiconductor light emitting device according to claim 1, wherein an elastic modulus of the first insulating layer is lower than an elastic modulus of the semiconductor stacked body.   3. The semiconductor light emitting device according to claim 1, wherein an elastic modulus of the first insulating layer is lower than an elastic modulus of the first column portion and an elastic modulus of the second column portion.   The semiconductor light emitting device according to claim 1, wherein the first insulating layer is further provided between the first conductive portion and a part of the first electrode.   The semiconductor light emitting device according to claim 1, wherein the first insulating layer is further provided between the second conductive portion and a part of the second electrode. The first insulating layer is provided between the at least part of the first pillar portion and the semiconductor stacked body,
The first conductive portion covers at least a part of a surface of the first insulating layer opposite to the semiconductor stacked body and electrically connects the first electrode and the first pillar portion. The semiconductor light emitting device according to claim 1, further comprising a portion. The first insulating layer is provided between the at least part of the second pillar portion and the semiconductor stacked body,
The second conductive portion covers at least a part of the surface of the first insulating layer opposite to the semiconductor stacked body, and electrically connects the second electrode and the second pillar portion. The semiconductor light emitting device according to claim 1, further comprising a portion.   The semiconductor laminate further includes a second insulating layer provided in a region where the first insulating layer is not provided on the second main surface of the semiconductor stacked body and having a thermal conductivity higher than that of the first insulating layer. The semiconductor light-emitting device according to claim 1, wherein the semiconductor light-emitting device is a semiconductor light-emitting device.   The semiconductor light emitting device according to claim 8, wherein the second insulating layer is provided in a region excluding a region facing the first pillar portion on the second main surface.   The semiconductor light emitting device according to claim 8, wherein the second insulating layer is provided in a region excluding a region facing the second pillar portion on the second main surface.   The said 1st insulating layer is provided between the surface at the side of the said semiconductor laminated body of the said 2nd pillar part, and the said 2nd electrode, The any one of Claims 1-10 characterized by the above-mentioned. Semiconductor light-emitting device as described in one.   The semiconductor light emitting device according to claim 1, wherein the first insulating layer is not provided between the second pillar portion and the semiconductor stacked body. The semiconductor laminate includes a first conductivity type first semiconductor layer provided on the first main surface side, a second conductivity type second semiconductor layer provided on the second main surface side, and A light emitting layer provided between the first semiconductor layer and the second semiconductor layer,
In the semiconductor stacked body, the second semiconductor layer and the light emitting layer are selectively removed to expose a part of the first semiconductor layer on the second main surface,
The first electrode is electrically connected to the first semiconductor layer on the second main surface side,
The semiconductor light emitting device according to claim 1, wherein the second electrode is electrically connected to the second semiconductor layer on the second main surface side. , A semiconductor stacked body having a first main surface and a second main surface opposite to the first main surface, a first electrode and a second electrode provided on the second main surface of the semiconductor stacked body A light emitting portion including an electrode; a first conductive portion including a first pillar portion that is electrically connected to the first electrode and is erected on the second main surface; and electrically connected to the second electrode A second conductive portion including a second pillar portion that is connected to the second main surface and is erected on the second main surface, between at least a portion of the first pillar portion and the semiconductor stacked body, and A first insulating layer provided on at least one of the second pillar portion and at least one of the semiconductor stacked bodies, and a sealing covering a side surface of the first conductive portion and a side surface of the second conductive portion. And an optical layer provided on the first main surface of the semiconductor stacked body, which absorbs the emitted light emitted from the light emitting layer, and the wavelength of the emitted light The method for manufacturing a semiconductor light emitting device having, said optical layer comprising a wavelength converting part for emitting light of different wavelengths,
Forming the first insulating layer in a region corresponding to at least one of the first pillar part and at least part of the second pillar part of the second main surface of the semiconductor stacked body;
A method of manufacturing a semiconductor light emitting device, comprising: forming a conductive film on at least a part of the first conductive part and at least a part of the second conductive part on the first insulating layer.   The formation of the first insulating layer and the formation of the conductive film are collectively performed on the plurality of semiconductor stacked bodies in a substrate provided with the plurality of semiconductor stacked bodies. Item 15. A method for manufacturing a semiconductor light emitting device according to Item 14.