JP2011119767A - Method for dicing wafer, method for mounting, method for manufacturing chip with adhesive layer, and mounted body - Google Patents

Abstract

The visibility of a wafer cutting line is ensured, and an adhesive layer is simply attached to each chip.
A mounting step of placing a wafer on a dicing sheet, a dicing step of dicing the wafer into a plurality of chips, and forming an adhesive layer on the surface of the wafer after the dicing step. An adhesive layer forming step, and an expanding step of separating the wafer 20 and the adhesive layer 31 by stretching the dicing sheet 21 on which the wafer 20 is placed.
[Selection] Figure 1

Description

  The present invention provides a wafer dicing method for forming a chip with an adhesive layer formed by adhering an adhesive layer on one side, a mounting method for mounting a chip with an adhesive layer, a method for manufacturing the chip with an adhesive layer, and The present invention relates to a mounting body on which a chip with an adhesive layer is mounted.

  Conventionally, a semiconductor integrated circuit is manufactured through a dicing process of cutting a semiconductor chip mounted on a substrate constituting the semiconductor integrated circuit from a semiconductor wafer and a mounting process of mounting the cut semiconductor chip on the substrate.

  In the dicing process, for example, a dicing apparatus 100 as shown in FIG. 7 is used. The dicing apparatus 100 includes a pedestal 102 on which a semiconductor wafer 101 is set, a saw blade 103 for cutting the semiconductor wafer 101, a temporary fixing sheet 104 provided on the pedestal 102 and holding the semiconductor wafer 101, and a temporary fixing sheet 104. An expanding sheet 105 to be expanded, and a control unit 106 for controlling the pedestal 102, the saw blade 103, and the expanding sheet 105 are provided. The expanded sheet 105 is held on the pedestal 102 by a vacuum adsorption tower, and a temporarily fixed sheet 104 is laminated on the upper surface.

  The control unit 106 rotates the pedestal 102 by a predetermined angle at a predetermined timing and drives the saw blade 103 to cut the semiconductor wafer 101 in a predetermined direction as shown in FIG. Further, as shown in FIG. 8B, the control unit 106 divides the semiconductor wafer 101 into a plurality of semiconductor chips by extending the expanded sheet 105 after cutting the semiconductor wafer 101.

  Each separated semiconductor chip 110 is mounted on a substrate 112 of a semiconductor integrated circuit via a film-like or paste-like adhesive layer 111 as shown in FIG. 9A. For the adhesive layer 111, an anisotropic conductive adhesive film or conductive adhesive paste formed by dispersing conductive particles in a binder resin, or an insulating adhesive film or insulating adhesive paste that does not contain conductive particles is used. It is done.

  The adhesive layer 111 is provided in advance on the mounting portion of the substrate 112. Then, after the individual semiconductor chips 110 are arranged on the adhesive layer 111, as shown in FIG. 9B, they are heated and pressed by a heating bonder 113 for a predetermined temperature, pressure, and time. . As a result, the binder resin of the adhesive layer 111 is melted, flows out between the electrodes of the semiconductor chip 110 and the substrate 112 facing each other, and the conductive particles are sandwiched. By curing the binder resin in this state, the semiconductor chip 110 is connected to the mounting portion of the substrate 112 and connected to the substrate 112.

  In the case where an insulating adhesive film or an insulating adhesive paste is used as the adhesive layer 111, the bump electrode provided on the semiconductor chip 110 is brought into contact with the electrode of the substrate 112 so that conduction is achieved.

  By the way, in the above-described method for manufacturing a semiconductor integrated circuit, it is necessary to form the adhesive layer 111 in a plurality of sizes and dispose it on the substrate 112 in accordance with the semiconductor chip 110 formed in a plurality of sizes. For this reason, when mounting a plurality of sizes of semiconductor chips 110 on the same substrate, it is difficult to uniformly arrange the adhesive layers 111 of various sizes by a machine, which increases the number of manufacturing steps and tact time.

  In addition, forming a conductive adhesive film according to the size of various semiconductor chips 110, or cutting the conductive adhesive film according to the size of various semiconductor chips 110, increases the manufacturing cost and causes a loss due to cutting. Will occur.

  Therefore, as shown in FIG. 10, prior to cutting the semiconductor wafer 101, a method of attaching an adhesive film 115 to be the adhesive layer 111 to the surface of the semiconductor wafer 101 in advance has been proposed. According to this construction method, after bonding the adhesive film 115 to the surface of the semiconductor wafer 101 on which a plurality of semiconductor elements are formed, the adhesive film 115 and the semiconductor chip 110 are collectively separated by dicing. Thus, it is not necessary to prepare an adhesive film 115 that matches the size of the semiconductor chip 110 and supply it to the substrate 112, and the mounting cost can be reduced.

JP 2008-130700 A Special Floor 2001-237268

  However, in the construction method in which the adhesive layer 111 and the semiconductor chip 110 are separated into one piece by dicing, when an anisotropic conductive adhesive film or an anisotropic conductive adhesive paste is used as the adhesive layer 111, the binder resin The dispersed conductive particles remarkably deteriorate the visibility of the adhesive layer 111, and it becomes difficult to visually recognize the scribe line provided on the surface of the semiconductor wafer 101 through the adhesive layer 111.

  Moreover, it is essential to add a filler to a resin for semiconductor mounting such as an anisotropic conductive adhesive film or an insulating adhesive film in order to lower the linear expansion coefficient. However, this filler further deteriorates the visibility of the adhesive layer 111. Also, silica is usually used as the filler, but the visibility of the adhesive layer 111 can be increased by reducing the amount of silica added or by adding a filler such as alumina that does not deteriorate the visibility compared to silica. Although it can be improved, the effect of lowering the linear expansion coefficient becomes insufficient, and the conduction reliability between the substrate 112 and the semiconductor chip 110 is lowered.

  Furthermore, dicing by the saw blade 103 is performed while water is sprayed on the cut portion, so there is a concern that the product life and performance of the adhesive layer 111 may deteriorate due to water. Further, there is a risk of poor connection due to chips and dust generated during dicing adhering to the adhesive layer 111. In addition, in order to suppress adverse effects due to such water and chips, it has also been proposed to attach a transparent cover film to the adhesive layer 111, but the adhesive layer 111 of the semiconductor chip 110 separated into pieces after dicing is proposed. It is more difficult and complicated to peel the cover film.

  Accordingly, the present invention provides a wafer dicing method, mounting method, and adhesive that can easily attach the adhesive layer 111 to each semiconductor chip 110 without deteriorating the visibility of the scribe line in the dicing process. An object of the present invention is to provide a method for manufacturing a chip with a layer and a mounting body.

  In order to solve the above-described problems, a wafer dicing method according to the present invention includes a placing step of placing a wafer on a dicing sheet, a dicing step of dicing the wafer into a plurality of chips, and the dicing step. An adhesive layer forming step of forming an adhesive layer on the surface of the wafer, and an expanding step of separating the wafer and the adhesive layer by stretching the dicing sheet on which the wafer is placed; Is provided.

  Further, the mounting method according to the present invention includes a mounting step of mounting a wafer on a dicing sheet, a dicing step of dicing the wafer into a plurality of chips, and an adhesive on the surface of the wafer after the dicing step. An adhesive layer forming step for forming a layer; an expanding step for separating the wafer and the adhesive layer by stretching the dicing sheet on which the wafer is placed; and the wafer that has been separated into pieces. Is mounted on the mounting portion of the substrate via the adhesive layer.

  Moreover, the manufacturing method of the chip | tip with an adhesive layer which concerns on this invention is the above-mentioned after the mounting process which mounts a wafer on a dicing sheet, the dicing process which dices the said wafer into several chip | tips, and the said dicing process. An adhesive layer forming step for forming an adhesive layer on the surface of the wafer; and an expanding step for separating the wafer and the adhesive layer by stretching the dicing sheet on which the wafer is placed. It is.

  The mounting body according to the present invention is manufactured by the above-described method.

  According to the present invention, an adhesive layer is formed on the bonding surface after dicing the wafer. Therefore, the wafer can be reliably subjected to a predetermined dicing process without the adhesive layer impairing the visibility of the scribe line. In addition, the adhesive layer is not affected by chips or dust generated in the dicing process, water supplied from the nozzle, or the like, the product life is not deteriorated, and the conduction reliability can be ensured.

It is a figure which shows the process of the dicing method of the wafer which concerns on this Embodiment. It is a side view which shows the dicing apparatus which can be used for this Embodiment. It is a side view which shows a mounting process and a dicing process. It is a side view which shows an adhesive bond layer formation process. It is a side view which shows an expanding process. It is a side view which shows the mounting process of a semiconductor chip. It is a perspective view which shows a dicing apparatus. It is a top view which shows a wafer dicing process and an expanding process. It is a side view which shows the mounting process of the conventional semiconductor chip, (a) shows the arrangement | positioning process of an adhesive film and a semiconductor chip, (b) shows the adhesion process by a heating bonder. It is a side view which shows the process of cut | disconnecting the wafer with an adhesive film.

  Hereinafter, a wafer dicing method, a mounting method, a manufacturing method of a chip with an adhesive layer, and a mounting body to which the present invention is applied will be described in detail with reference to the drawings.

  As shown in FIG. 1, the wafer dicing method according to the present embodiment includes a placing process, a dicing process, an adhesive layer forming process, and an expanding process. The wafer dicing method according to the present embodiment can be performed using, for example, the dicing apparatus 1 shown in FIG.

[Dicing machine 1]
The dicing apparatus 1 includes a chuck table 2 on which a jig 22 holding a wafer 20 is placed, an alignment stage 3 that adjusts the position of the chuck table 2, and an imaging unit 4 that visually recognizes a scribe line of the wafer 20. A cutting unit 5 for dicing the wafer 20, a nozzle 6 for supplying water to the dicing part, and a control unit 7 for controlling the entire apparatus are provided.

  For example, the chuck table 2 sucks and fixes the jig 22 by a decompression device (not shown). The alignment stage 3 moves the chuck table 2 in the x and y directions in FIG. 2 based on instructions from the control unit 7.

  The imaging unit 4 includes, for example, an infrared camera, and includes an optical system that receives light reflected by the surface of the wafer 20, that is, the adhesive surface 20 a of the wafer 20, and an imaging device that captures an image captured by the optical system. Have. For example, the imaging unit 4 irradiates light from the bonding surface 20 a or the mounting surface 20 b of the wafer 20 and receives reflected light from the bonding surface 20 a of the wafer 20 or transmitted light that has passed through the wafer 20, thereby allowing the wafer to be captured. An image of 20 adhesive surfaces 20a is taken. Then, the imaging unit 4 transmits information on the captured image to the control unit 7.

  The cutting unit 5 cuts the wafer 20 based on an instruction from the control unit 7. The cutting unit 5 includes, for example, a blade 8 that cuts the wafer 20. The cutting unit 5 presses the rotating blade 8 along the scribe line of the wafer 20 to cut the wafer 20. The nozzle 6 supplies water to a dicing portion by the blade 8 based on an instruction from the control unit 7.

  The control unit 7 includes an image processing unit 9 that processes an image captured by the imaging unit 4, a drive unit 10 that receives information on the scribe line of the wafer 20 from the image processing unit 9 and drives the alignment stage 3 and the cutting unit 5. And a nozzle control unit 11 that supplies water from the nozzle 6 to the dicing portion in accordance with the dicing operation of the cutting unit 5.

[Placement process]
Next, with reference to FIG. 3, a mounting process for mounting the wafer 20 on the chuck table 2 of the dicing apparatus 1 will be described. The wafer 20 is separated into a plurality of semiconductor chips 30 by the dicing apparatus 1, and examples thereof include a semiconductor wafer such as a silicon wafer. The wafer 20 has an adhesive surface 20a that is electrically connected to the substrate electrode 34 formed on the mounting portion of the substrate 33 via the adhesive layer 31 when the one surface is separated into semiconductor chips 30 and the other surface. The surface is a mounting surface 20 b that is fixed to the jig 22 by being attached to the dicing tape 21. On the bonding surface 20 a of the wafer 20, a chip electrode 32 that is conductively connected to an electrode on the substrate 33 side is provided for each semiconductor chip 30 divided by the scribe line 25.

  The jig 22 for fixing the wafer 20 includes, for example, a ring-shaped or frame-shaped frame 23 having a diameter larger than the diameter of the wafer 20 and a dicing tape 21 attached to the frame 23. The frame 23 is provided so as to be expandable in the x direction and the y direction in FIG.

  The dicing tape 21 is attached to the mounting surface 20 b of the wafer 20, and fixes the wafer 20 in the dicing process and prevents chip jumps of the chips divided into the semiconductor chips 30. The dicing tape 21 has expandability, and diced wafer 20 is divided into a plurality of semiconductor chips 30.

  For example, the dicing tape 21 is affixed to one surface side of the frame 23 and is spread inside the frame 23. As the dicing tape 21, for example, an adhesive film whose peeling force is reduced by irradiating ultraviolet rays is used. Thus, the dicing tape 21 is easily separated when the individual semiconductor chips 30 are picked up by being irradiated with ultraviolet rays after the wafer 20 is separated into a plurality of semiconductor chips 30. be able to.

  In the mounting process, the wafer 20 is attached to the dicing tape 21 at, for example, the center of one surface of the jig 22.

[Dicing process]
When the wafer 20 is fixed to the jig 22, the imaging of the bonding surface 20 a of the wafer 20 is performed by the imaging unit 4 in order to determine the scribe line 25 for cutting the wafer 20. Imaging can be performed by irradiating light from the bonding surface 20 a side of the wafer 20 facing the imaging unit 4 and receiving reflected light from the bonding surface 20 a by the imaging unit 4. Alternatively, the imaging may be performed by irradiating light that passes from the chuck table 2 toward the mounting surface 20 b of the wafer 20 to the bonding surface 20 a of the wafer 20 and receiving the transmitted light by the imaging unit 4.

  The imaging unit 4 transmits the captured image information to the control unit 7. The controller 7 determines a predetermined scribe line 25 from the image information by the image processor 9. Then, the control unit 7 drives the alignment stage 3 and the cutting unit 5 so that the driving unit 10 cuts the wafer 20 along the scribe line 25 determined by the image processing unit 9.

  For example, when the wafer 20 is divided in the x direction in FIG. 2 along the scribe line 25, the driving unit 10 drives the alignment stage 3 so that one end of the scribe line 25 is positioned below the blade 8. Move 2. Next, the driving unit 10 drives the cutting unit 5 to lower the cutting unit 5 while rotating the blade 8, and cuts the wafer 20 with the blade 8. Subsequently, the driving unit 10 drives the alignment stage 3 to move the wafer 20 in the x direction.

  As described above, in the dicing process, the wafer 20 can be divided into a plurality of semiconductor chips 30 by cutting the wafer 20 in a predetermined direction along the scribe line 25. At this time, since the mounting surface 20b is stuck to the dicing tape 21, the wafer 20 is held in a disk shape without chip skipping of each chip divided into the plurality of semiconductor chips 30.

  In the dicing process, the nozzle controller 11 supplies water from the nozzle 6 to the dicing portion.

[Adhesive layer forming step]
Next, as shown in FIG. 4, an adhesive layer 31 is formed on the bonding surface 20 a of the wafer 20. The adhesive layer 31 includes an anisotropic conductive adhesive film (ACF) formed by dispersing conductive particles in a binder resin, a conductive adhesive paste, or an insulating adhesive film that does not contain conductive particles. (NCF: Non Particle Conductive Film), an insulating adhesive paste, or a laminate of ACF and NCF. In the case where a conductive adhesive paste or an insulating adhesive paste is used as the adhesive layer, the conductive adhesive paste or the insulating adhesive paste is preheated to about 100 ° C. before being laminated on the adhesive surface 20a of the wafer 20. To B stage.

  The adhesive layer 31 includes, for example, a film forming resin, a liquid curing component, and a curing agent. The adhesive layer 31 may contain additives such as various rubber components, softeners, various fillers, and the like.

  Examples of the film forming resin include phenoxy resin, polyester resin, polyamide resin, and polyimide resin. The film-forming resin preferably contains a phenoxy resin from the viewpoint of easy availability of materials and connection reliability. Examples of the liquid curing component include liquid epoxy resins and acrylates. The liquid curing component preferably has two or more functional groups from the viewpoint of connection reliability and stability of the cured product. Examples of the curing agent include imidazole, amines, sulfonium salts, onium salts, and phenols when the liquid curing component is a liquid epoxy resin. When the liquid curing component is an acrylate, an organic peroxide can be exemplified as the curing agent.

  Examples of the conductive particles contained in the anisotropic conductive adhesive film and the conductive adhesive paste include any known conductive particles used in anisotropic conductive films, such as nickel, iron, Various metal and metal alloy particles such as copper, aluminum, tin, lead, chromium, cobalt, silver, gold, etc., metal oxide, carbon, graphite, glass, ceramic, plastic, etc. Or what coated the surface of these particle | grains further with the insulating thin film etc. are mentioned. In the case where the surface of the resin particle is coated with metal, examples of the resin particle include an epoxy resin, a phenol resin, an acrylic resin, an acrylonitrile / styrene (AS) resin, a benzoguanamine resin, a divinylbenzene resin, a styrene resin, and the like. Can be mentioned.

  In addition, the anisotropic conductive adhesive film and the insulating adhesive film are formed by coating on a release film such as PET subjected to a release treatment from the viewpoint of easy handling and storage stability. In the anisotropic conductive adhesive film and the insulating adhesive film, the surface opposite to the surface on which the release film is provided is attached to the adhesive surface 20 a of the wafer 20. Further, the anisotropic conductive adhesive film and the insulating adhesive film are formed in the same shape as the wafer 20, for example, in a circular shape.

  In the step of forming the adhesive layer, an anisotropic conductive adhesive film or an insulating adhesive film is disposed on the adhesive surface 20 a of the wafer 20. Next, a heat bonder (not shown) is heated and pressed from above the release film at a predetermined temperature, pressure, and time such that fluidity occurs in the anisotropic conductive adhesive film and the insulating adhesive film, but main curing does not occur. Thereby, the adhesive layer 31 which consists of an anisotropic conductive adhesive film and an insulating adhesive film is formed in the wafer 20 at the adhesive surface 20a. After the formation of the adhesive layer 31, the release film is peeled off.

  The heating bonder may be heated and pressed by interposing an elastic body such as silicone rubber between the wafer 20. By interposing the elastic body, the heating bonder can apply pressure evenly over the entire surface of the wafer 20.

[Expanding process]
Next, as shown in FIG. 5, the wafer 20 is expanded to be separated into individual semiconductor chips 30. In this expanding step, the dicing tape 21 is stretched in the horizontal direction in the x and y directions in FIG. As a result, the wafer 20 is separated into pieces for each of the plurality of semiconductor chips 30 divided along the scribe line 25.

  At this time, the adhesive layer 31 formed on the bonding surface 20a of the wafer 20 is separated from the semiconductor chip 30 along the scribe line 25 by the stress caused by the expansion while the wafer 20 is separated into individual semiconductor chips 30. Cut into the same shape. Therefore, the wafer 20 on which the adhesive layer 31 is formed by the expanding process is divided into pieces for each of the plurality of semiconductor chips 30 provided with the adhesive layer 31 on the mounting surface to the substrate 33.

  Thereafter, after the adhesive force is reduced by irradiating the dicing tape 21 with ultraviolet rays or the like, the semiconductor chip 30 with the adhesive layer 31 is pulled to peel off the dicing tape 21. As a result, a plurality of semiconductor chips 30 with the adhesive layers 31 are formed from the wafer 20 on which the adhesive layers 31 are formed. In the semiconductor chip 30 with the adhesive layer 31, the surface that was the adhesive surface 20 a of the wafer 20 becomes an adhesive surface 30 a on which the chip electrode 32 that is conductively connected to the substrate electrode 34 of the substrate 33 is formed. An adhesive layer 31 is formed on 30a.

  In the semiconductor chip 30, when an insulating adhesive film is used as the adhesive layer 31, a bump electrode may be formed as the chip electrode 32.

  As described above, according to the wafer dicing method and the method of manufacturing the semiconductor chip with the adhesive layer according to the present embodiment, the adhesive layer 31 is formed on the adhesive surface 20a after the wafer 20 is diced. Therefore, the wafer 20 can be reliably subjected to predetermined dicing without the adhesive layer 31 impairing the visibility of the scribe line 25. In addition, the adhesive layer 31 is not affected by chips or dust generated in the dicing process, water supplied from the nozzle 6, etc., is not deteriorated in product life, and can secure conduction reliability. it can.

  Further, according to the wafer dicing method and the method of manufacturing the semiconductor chip with an adhesive layer according to the present embodiment, the conventional method can be used until the dicing process of the wafer 20, and the manufacturing equipment and the manufacturing process are large. Can be introduced without change. In addition, since the adhesive layer is formed after the dicing process, a conductive adhesive film with low visibility or an insulating adhesive film with a large filler filling amount can be used as the material of the adhesive layer 31. The linear expansion coefficient can be lowered.

[Mounting process]
The semiconductor chip 30 with the adhesive layer 31 picked up from the dicing tape 21 is mounted on the substrate 33 constituting the semiconductor integrated circuit via the adhesive layer 31 as shown in FIG. The substrate 33 is, for example, a rigid substrate or a flexible substrate, and a substrate electrode 34 that is electrically connected to the chip electrode 32 formed on the bonding surface 30a of the semiconductor chip 30 is formed on the mounting portion where the semiconductor chip 30 is mounted. ing.

  The semiconductor chip 30 can be mounted using, for example, the mounting apparatus 40 shown in FIG. The mounting apparatus 40 includes a stage 41 on which the substrate 33 is placed, and a heating bonder 42 that is supported to face the stage 41 and heats and presses the semiconductor chip 30 to the substrate 33. The heating bonder 42 is attached with a pressing member 43 made of an elastic body such as an elastomer of silicon rubber, and the semiconductor chip 30 is heated and pressed by the pressing member 43.

  In the mounting process, first, the plurality of semiconductor chips 30 with the adhesive layer 31 are temporarily mounted on the substrate 33 placed on the stage 41. At this time, the semiconductor chip 30 with the adhesive layer 31 is temporarily mounted with the adhesive surface 30 a provided with the adhesive layer 31 facing the substrate 33. Further, the semiconductor chip 30 with the adhesive layer 31 is temporarily mounted by being aligned so that the chip electrode 32 formed on the bonding surface 30a and the substrate electrode 34 provided on the substrate 33 face each other.

  Next, the mounting apparatus 40 lowers the heating bonder 42 and heats and presses the semiconductor chip 30 with the adhesive layer 31 to the substrate 33 with the pressing member 43. At this time, for example, according to a method called an EBS (Elasticity Bonding System) method in which the entire substrate 33 is pressed in a state of being covered with an elastic body, a plurality of semiconductor chips 30 temporarily mounted on the same substrate are collectively bonded. be able to.

  By being heated and pressed at a predetermined temperature, pressure, and time by the heating bonder 42, the binder resin flows in the adhesive layer 31, and the conductive particles are sandwiched between the chip electrode 32 and the substrate electrode 34. At the same time, it hardens in this state. As a result, a mounting body is formed in which the chip electrode 32 of the semiconductor chip 30 is electrically and mechanically connected to the substrate electrode 34 of the substrate 33.

  Here, according to the mounting method and the mounting body according to the present embodiment, as described above, the adhesive layer 31 is formed on the adhesive surface 20a after the wafer 20 is diced. It is not affected by chips and dust generated in the dicing process, water supplied from the nozzle 6, etc., there is no deterioration in the product life of the mounting body on which the semiconductor chip 30 is mounted, and long-term conduction reliability. Can be secured.

[Cold Expand]
Further, when the expansion process described above is performed in an environment cooled to 10 ° C. or lower, the adhesive layer 31 such as an anisotropic conductive adhesive film or an insulating adhesive film has low elasticity due to low temperature (cold). Expand). Therefore, by performing the expanding process under such a low temperature environment, the adhesive layer 31 formed on the bonding surface 20a of the wafer 20 is more reliably cut into the same shape as the semiconductor chip 30 along the scribe line 25. .

[Others]
In the above-described embodiment, the case where a plurality of semiconductor chips 30 with the adhesive layer 31 are collectively mounted on the substrate 33 using an elastic body such as an elastomer for the pressing member 43 has been described. However, the method of mounting the semiconductor chip 30 with the adhesive layer 31 on the substrate 33 is not limited to this. For example, the semiconductor chip 30 with the adhesive layer 31 may be mounted on the substrate 33 without using an elastic body such as an elastomer. Further, the plurality of semiconductor chips 30 with the adhesive layer 31 may be mounted on the substrate 33 one by one.

  The heating bonder 42 may be formed using a hard head such as ceramic or metal, or an ultrasonic head.

DESCRIPTION OF SYMBOLS 1 Dicing apparatus, 2 Chuck table, 3 Alignment stage, 4 Imaging part, 5 Cutting part, 6 Nozzle, 7 Control part, 8 Blade, 9 Image processing part, 10 Driving part, 11 Nozzle control part, 20 Wafer, 20a Bonding surface 20b Mounting surface, 22 Jig, 23 Frame, 30 Semiconductor chip, 30a Adhesive surface, 31 Adhesive layer, 32 Chip electrode, 33 Substrate, 34 Substrate electrode, 40 Mounting device, 41 Stage, 42 Heat bonder, 43 Press Element

Claims (7)

A placing step of placing a wafer on a dicing sheet;
A dicing step of dicing the wafer into a plurality of chips;
An adhesive layer forming step of forming an adhesive layer on the surface of the wafer after the dicing step;
A wafer dicing method comprising: an expanding step of separating the wafer and the adhesive layer by stretching the dicing sheet on which the wafer is placed.   2. The wafer dicing method according to claim 1, wherein the expanding step is a cold expanding performed at 10 [deg.] C. or lower.   The wafer dicing method according to claim 1, wherein the adhesive layer forming step is performed by attaching an adhesive film to the wafer surface.   4. The wafer dicing method according to claim 3, wherein the adhesive film is an insulating adhesive film or an anisotropic conductive adhesive film containing conductive particles. A placing step of placing a wafer on a dicing sheet;
A dicing step of dicing the wafer into a plurality of chips;
An adhesive layer forming step of forming an adhesive layer on the surface of the wafer after the dicing step;
An expanding step of separating the wafer and the adhesive layer by stretching the dicing sheet on which the wafer is placed;
A mounting method comprising: mounting the separated wafer on a mounting portion of a substrate through the adhesive layer. A placing step of placing a wafer on a dicing sheet;
A dicing step of dicing the wafer into a plurality of chips;
An adhesive layer forming step of forming an adhesive layer on the surface of the wafer after the dicing step;
The manufacturing method of the chip | tip with an adhesive layer provided with the expanding process which separates the said wafer and the said adhesive bond layer by extending | stretching the said dicing sheet in which the said wafer was mounted.   A mounting body manufactured by the method according to claim 5.

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