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JP2011114093A - Lighting system - Google Patents

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JP2011114093A
JP2011114093A JP2009268072A JP2009268072A JP2011114093A JP 2011114093 A JP2011114093 A JP 2011114093A JP 2009268072 A JP2009268072 A JP 2009268072A JP 2009268072 A JP2009268072 A JP 2009268072A JP 2011114093 A JP2011114093 A JP 2011114093A
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covering member
light
led chip
covering
light emitting
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Koji Nishioka
浩二 西岡
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Panasonic Electric Works Co Ltd
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Abstract

【課題】照明装置の光出射面から放射される光の色むらがより少なく、光取り出し効率のより高い照明装置を提供する。
【解決手段】実装基板2の一表面2a上の複数個のLEDチップ(発光素子)1と、該複数個のLEDチップ1を被覆する被覆部4を介して複数個のLEDチップ1を覆う波長変換層3と、を有し、被覆部4は、LEDチップ1をそれぞれ被覆する第一の被覆部材5と、該第一の被覆部材5を被覆し該第一の被覆部材5よりも屈折率の大きい第二の被覆部材6とを備え、該第二の被覆部材6は、隣接するLEDチップ1同士の間で、LEDチップ1から放射された光のうち、隣接するLEDチップ1側に向かう光を、光の屈折によって、LEDチップ1同士の間における上記一表面2aと対向する波長変換層3側に反射させる界面を備えた照明装置10である。
【選択図】図1
Provided is an illuminating device that has less color unevenness of light emitted from a light exit surface of the illuminating device and higher light extraction efficiency.
Wavelengths covering a plurality of LED chips 1 via a plurality of LED chips (light emitting elements) 1 on one surface 2a of a mounting substrate 2 and a covering portion 4 covering the plurality of LED chips 1. The conversion layer 3, and the covering portion 4 has a first covering member 5 that covers the LED chip 1 and a refractive index higher than the first covering member 5 that covers the first covering member 5. Of the light emitted from the LED chip 1 between the adjacent LED chips 1 toward the adjacent LED chip 1 side. It is the illuminating device 10 provided with the interface which reflects light in the wavelength conversion layer 3 side facing the said one surface 2a between LED chips 1 by refraction of light.
[Selection] Figure 1

Description

本発明は、発光素子および該発光素子からの光を波長変換する波長変換層を用いた照明装置に関するものである。   The present invention relates to a light emitting device and an illumination device using a wavelength conversion layer that converts the wavelength of light from the light emitting device.

近年、LEDチップなどの半導体発光素子からなる発光素子と、該発光素子を被覆し、該発光素子からの光の少なくとも一部を吸収し波長変換して補色となる光を発する蛍光体が含有された透光性部材からなる波長変換層とを備え、たとえば、発光素子からの青色光と波長変換層からの黄色光とを混色した白色光を放射する発光装置が開発されている。この種の発光装置は、発光素子の光出力の高出力化などにともない照明装置にまで応用されている。   In recent years, a light-emitting element composed of a semiconductor light-emitting element such as an LED chip and a phosphor that covers the light-emitting element and absorbs at least part of the light from the light-emitting element and emits a complementary color by wavelength conversion are included. For example, a light-emitting device that emits white light in which blue light from a light-emitting element and yellow light from a wavelength conversion layer are mixed has been developed. This type of light-emitting device has been applied to lighting devices as the light output of light-emitting elements increases.

このような発光装置を照明装置に応用する場合、一つの発光素子の光出力だけでは照明装置として十分な光出力を得ることが難しく、照明装置から放射させる光出力の確保や面状の発光を得るために複数個の発光素子を実装基板上に実装させるとともに、複数個の発光素子を覆うように波長変換層を配置することが考えられる。しかしながら、発光素子は、照明装置全体から見ると比較的小さく、点光源としてみなされるために、単に、波長変換層を複数個の発光素子を被覆するように配置させた構成だけでは、個々の発光素子から放射される光が目立ってしまう。たとえば、青色光を放出する複数個の発光素子たる複数個のLEDチップと、青色光を吸収し補色となる黄色の蛍光を放出する波長変換層を用いた照明装置において、照明装置の光出射面を見ると、照明装置から放射される光量は、LEDチップが配置された位置と、LEDチップ同士の間となる位置とで異なる。そのため、照明装置の光出射面は、LEDチップ同士の間となる位置が、LEDチップが配置される位置より暗くなってしまう。また、照明装置の光出射面では、LEDチップに対応する位置と比較して、LEDチップ同士の間に対応する位置の色調が、より黄色く見えてしまう傾向にある。特に、照明装置は、所望の配光を得るために、別途にレンズや反射鏡を組み合わせる場合もあり、照明装置からの光が照射される被照射面に照度むらや色むらやが目立ってしまう場合もある。   When such a light-emitting device is applied to a lighting device, it is difficult to obtain a sufficient light output as a lighting device with only the light output of one light-emitting element. In order to obtain this, it is conceivable to mount a plurality of light emitting elements on a mounting substrate and to dispose a wavelength conversion layer so as to cover the plurality of light emitting elements. However, since the light emitting element is relatively small when viewed from the whole lighting device, and is regarded as a point light source, the individual light emission is simply achieved by arranging the wavelength conversion layer so as to cover a plurality of light emitting elements. The light emitted from the element is noticeable. For example, in a lighting device using a plurality of LED chips, which are a plurality of light emitting elements that emit blue light, and a wavelength conversion layer that absorbs blue light and emits yellow fluorescent light, the light emitting surface of the lighting device , The amount of light emitted from the lighting device differs between the position where the LED chips are arranged and the position between the LED chips. For this reason, the position of the light emitting surface of the illumination device between the LED chips becomes darker than the position where the LED chips are arranged. Further, on the light emitting surface of the illumination device, the color tone of the position corresponding to the LED chips tends to appear more yellow than the position corresponding to the LED chip. In particular, in order to obtain a desired light distribution, the lighting device may be separately combined with a lens or a reflecting mirror, and uneven illumination and uneven color are conspicuous on the irradiated surface irradiated with light from the lighting device. In some cases.

ところで、複数個のLEDチップを用いた照明装置から放射された光における照度むらを低減させるため、図5に示すように、実装基板2と、該実装基板2の一表面上で離間して実装される複数個のLEDチップ1と、該複数個のLEDチップ1を被覆する被覆部4’と、を有し、被覆部4’に拡散効果や反射効果のある粉体11を含有させた照明装置10’が知られている (たとえば、特許文献1参照。)。   By the way, in order to reduce the illuminance unevenness in the light emitted from the illuminating device using a plurality of LED chips, as shown in FIG. 5, the mounting substrate 2 and the mounting substrate 2 are separated and mounted on one surface. A plurality of LED chips 1 and a covering portion 4 ′ covering the plurality of LED chips 1, and the covering portion 4 ′ containing a powder 11 having a diffusion effect and a reflection effect An apparatus 10 'is known (for example, see Patent Document 1).

なお、図5に示した照明装置10’ は、LEDチップ1が実装された実装基板2の一表面側に、LEDチップ1からの光を反射させる反射層12が形成されている。また、この照明装置10’は、実装基板2の他表面側に、LEDチップ1への電流の制限に用いられる抵抗13などが設けられている。図5に示す照明装置10’は、LEDチップ1から放射される光が、被覆部4’中の粉体11で全方向に等方的に放射され、均一な面状の発光を放射することが可能になる、とされている。   In the illumination device 10 ′ shown in FIG. 5, a reflective layer 12 that reflects light from the LED chip 1 is formed on one surface side of the mounting substrate 2 on which the LED chip 1 is mounted. In addition, the illumination device 10 ′ is provided with a resistor 13 and the like used for limiting current to the LED chip 1 on the other surface side of the mounting substrate 2. 5, the light emitted from the LED chip 1 is isotropically emitted in all directions by the powder 11 in the covering portion 4 ′, and emits uniform planar light emission. Is supposed to be possible.

特開2000−156525号公報JP 2000-156525 A

しかしながら、上述の図5に示す照明装置10’では、LEDチップ1から放射された光が、被覆部4’中の粉体11によって拡散や反射され、光の拡散時や光の反射時に減衰されてしまう場合がある。また、LEDチップ1から放射された光は、被覆部4’中で粉体11によって繰り返し拡散や反射されため、照明装置10’の外部に放射されるまでの光の光路長が長くなることに伴い、被覆部4’などによっても減衰されてしまう。   However, in the illumination device 10 ′ shown in FIG. 5 described above, the light emitted from the LED chip 1 is diffused and reflected by the powder 11 in the covering portion 4 ′, and is attenuated when the light is diffused or reflected. May end up. In addition, since the light emitted from the LED chip 1 is repeatedly diffused and reflected by the powder 11 in the covering portion 4 ′, the optical path length of the light until it is emitted outside the illumination device 10 ′ is increased. As a result, it is also attenuated by the covering portion 4 ′ and the like.

また、別の方法として、照明装置の光出射面側に、光を拡散する拡散板を設けることで、照明装置の光出射面における色むらや輝度むらの低減させることも考えられるが、特許文献1と同様に、光の散乱吸収によって、光取り出し効率が低下することになる。   As another method, it may be possible to reduce unevenness in color and luminance on the light exit surface of the illumination device by providing a diffusion plate that diffuses light on the light exit surface side of the illumination device. As in the case of 1, the light extraction efficiency decreases due to light scattering and absorption.

そのため、より均一な面状の発光で、より高い光取り出し効率が求められている現在においては、上述の照明装置10’の構成では十分ではなく更なる改良が求められている。   Therefore, at the present time when higher light extraction efficiency is required with more uniform planar light emission, the above-described configuration of the illumination device 10 ′ is not sufficient and further improvement is required.

本発明は上記事由に鑑みて為されたものであり、その目的は、照明装置の光出射面から放射される光の色むらがより少なく、光取り出し効率のより高い照明装置を提供することにある。   The present invention has been made in view of the above-described reasons, and an object thereof is to provide a lighting device with less light color unevenness emitted from the light emitting surface of the lighting device and higher light extraction efficiency. is there.

請求項1の発明は、実装基板と、該実装基板の一表面上で離間して実装される複数個の発光素子と、該複数個の発光素子を被覆する被覆部を介して複数個の前記発光素子を覆い、前記発光素子から放射された光の少なくとも一部を波長変換する波長変換層と、を有する照明装置であって、前記被覆部は、前記発光素子をそれぞれ被覆する第一の被覆部材と、該第一の被覆部材を被覆し該第一の被覆部材よりも屈折率の大きい第二の被覆部材とを備え、該第二の被覆部材は、隣接する前記発光素子同士の間で、前記発光素子から放射された光のうち、隣接する前記発光素子側に向かう光を、光の屈折によって、前記発光素子同士の間における前記一表面と対向する前記波長変換層側に反射させる界面を備えてなることを特徴とする。   The invention of claim 1 includes a mounting substrate, a plurality of light emitting elements mounted on one surface of the mounting substrate so as to be spaced apart from each other, and a plurality of the light emitting elements through a covering portion that covers the plurality of light emitting elements. A wavelength conversion layer that covers a light emitting element and wavelength-converts at least a part of light emitted from the light emitting element, wherein the covering portion covers each of the light emitting elements. And a second covering member that covers the first covering member and has a refractive index larger than that of the first covering member, and the second covering member is disposed between the adjacent light emitting elements. The interface that reflects the light emitted from the light emitting element toward the adjacent light emitting element side to the wavelength conversion layer side facing the one surface between the light emitting elements by light refraction. It is characterized by comprising.

この発明によれば、被覆部の第二の被覆部材が、発光素子から放射された光のうち、隣接する前記発光素子側に向かう光を、光の屈折によって、前記発光素子同士の間における実装基板の一表面と対向する波長変換層側に反射させる界面を有するので、照明装置の光出射面から放射される光の色むらがより少なく、光取り出し効率のより高い照明装置とすることができる。   According to this invention, the second covering member of the covering portion mounts the light emitted from the light emitting elements toward the adjacent light emitting element side between the light emitting elements by refraction of the light. Since it has an interface to be reflected on the wavelength conversion layer side facing one surface of the substrate, it is possible to provide a lighting device with less color unevenness of light emitted from the light emitting surface of the lighting device and higher light extraction efficiency. .

なお、照明装置の前記第二の被覆部材の前記界面は、製造時に前記発光素子を被覆する被覆工程を利用した被覆材料の充填などで形成することができるため、照明装置を比較的簡単に製造することができ、照明装置の製造コストを抑制することもできる。   In addition, since the interface of the second covering member of the lighting device can be formed by filling a coating material using a coating process for covering the light emitting element at the time of manufacturing, the lighting device can be manufactured relatively easily. This can also reduce the manufacturing cost of the lighting device.

請求項2の発明は、請求項1に記載の発明において、前記第二の被覆部材は、前記発光素子の厚み方向に沿った光放射方向に前記第二の被覆部材と接する第三の被覆部材を設けており、該第三の被覆部材は、前記第二の被覆部材よりも屈折率が小さいことを特徴とする。   According to a second aspect of the present invention, in the first aspect of the invention, the second covering member is a third covering member that contacts the second covering member in a light emission direction along the thickness direction of the light emitting element. The third covering member has a refractive index smaller than that of the second covering member.

この発明によれば、第三の被覆部材により、前記発光素子の厚み方向に沿った光放射方向の光の一部を、前記発光素子同士の間における前記一表面と対向する前記波長変換層側に向かうように屈折させることができるので、さらに、色むらを少なくできるとともに、光取り出し効率を高めることができる。   According to this invention, the third covering member allows the part of the light in the light emission direction along the thickness direction of the light emitting element to be part of the wavelength conversion layer facing the one surface between the light emitting elements. Therefore, the color unevenness can be reduced and the light extraction efficiency can be increased.

請求項3の発明は、請求項1または請求項2に記載の発明において、前記第二の被覆部材は、前記発光素子同士の間における前記一表面と対向する前記第二の被覆部材に該第二の被覆部材の少なくとも一部を介して該第二の被覆部材と接する第四の被覆部材が設けられ、該第四の被覆部材は、前記第二の被覆部材よりも屈折率が大きいことを特徴とする。   According to a third aspect of the present invention, in the first or second aspect of the present invention, the second covering member is formed on the second covering member facing the one surface between the light emitting elements. A fourth covering member is provided in contact with the second covering member via at least a part of the second covering member, and the fourth covering member has a refractive index larger than that of the second covering member. Features.

この発明によれば、前記発光素子同士の間における前記一表面と対向する前記波長変換層側に向かう光のうち、前記第二の被覆部材を透過して前記波長変換層で反射された光を、前記第二の被覆部材と前記第四の被覆部材との界面で再び前記波長変換層側に反射させてることができるので、さらに、色むらを少なくできるとともに、光取り出し効率を高めることができる。   According to this invention, among the light traveling toward the wavelength conversion layer facing the one surface between the light emitting elements, the light transmitted through the second covering member and reflected by the wavelength conversion layer is reflected. Further, since it can be reflected again to the wavelength conversion layer side at the interface between the second covering member and the fourth covering member, color unevenness can be further reduced and light extraction efficiency can be increased. .

請求項1の発明では、複数個の発光素子をそれぞれ被覆する第一の被覆部材と、該第一の被覆部材を被覆し該第一の被覆部材よりも屈折率の大きい第二の被覆部材とを備え、該第二の被覆部材は、隣接する前記発光素子同士の間で、前記発光素子から放射された光のうち、隣接する前記発光素子側に向かう光を、光の屈折によって、前記発光素子同士の間における該発光素子が実装された実装基板の一表面と対向する波長変換層側に反射させる界面を備えてなることにより、照明装置の光出射面から放射される光の色むらがより少なく、光取り出し効率のより高い照明装置を提供できるという顕著な効果がある。   In the invention of claim 1, a first covering member that covers each of the plurality of light emitting elements, a second covering member that covers the first covering member and has a higher refractive index than the first covering member, And the second covering member emits light emitted from the light emitting elements among the adjacent light emitting elements toward the adjacent light emitting elements by refraction of light. By providing an interface that reflects to the wavelength conversion layer side facing the one surface of the mounting substrate on which the light emitting element is mounted between the elements, color unevenness of light emitted from the light emitting surface of the illumination device There is a remarkable effect that it is possible to provide a lighting device with less light extraction efficiency.

実施形態1の照明装置を示す概略断面図である。It is a schematic sectional drawing which shows the illuminating device of Embodiment 1. 同上の別の照明装置を示す概略断面図である。It is a schematic sectional drawing which shows another illuminating device same as the above. 実施形態2の照明装置を示す概略断面図である。It is a schematic sectional drawing which shows the illuminating device of Embodiment 2. 実施形態3の照明装置を示す概略断面図である。It is a schematic sectional drawing which shows the illuminating device of Embodiment 3. 従来の照明装置を示す概略断面図である。It is a schematic sectional drawing which shows the conventional illuminating device.

(実施形態1)
以下、本実施形態の照明装置を図1および図2に基づいて説明する。なお、図1および図2において同じ部材に対しては、同じ番号を付して重複する説明を省略している。
(Embodiment 1)
Hereinafter, the illuminating device of this embodiment is demonstrated based on FIG. 1 and FIG. In FIG. 1 and FIG. 2, the same members are denoted by the same reference numerals and redundant description is omitted.

本実施形態の図1に示す照明装置10は、実装基板2と、該実装基板2の一表面2a上で離間して実装される複数個(ここでは、三個)の発光素子たるLEDチップ1と、該複数個のLEDチップ1を被覆する被覆部4を介して複数個のLEDチップ1を覆い、LEDチップ1から放射された光の少なくとも一部を波長変換する波長変換層3と、を有する。ここで、被覆部4は、LEDチップ1をそれぞれ被覆する第一の被覆部材5と、該第一の被覆部材5を被覆し該第一の被覆部材5よりも屈折率の大きい第二の被覆部材6とを備え、該第二の被覆部材6は、隣接するLEDチップ1同士の間で、LEDチップ1から放射された光のうち、隣接するLEDチップ1側に向かう光(図1中の破線の矢印参照)を、光の屈折によって、LEDチップ1同士の間における上記一表面2aと対向する前記波長変換層3側に反射させる界面を備えている。   The illumination device 10 shown in FIG. 1 of the present embodiment includes a mounting substrate 2 and LED chips 1 that are a plurality of (three in this case) light emitting elements mounted separately on one surface 2a of the mounting substrate 2. And a wavelength conversion layer 3 that covers the plurality of LED chips 1 via the covering portion 4 that covers the plurality of LED chips 1 and converts the wavelength of at least a part of the light emitted from the LED chip 1. Have. Here, the covering portion 4 includes a first covering member 5 that covers the LED chip 1 and a second covering that covers the first covering member 5 and has a higher refractive index than the first covering member 5. 1, and the second covering member 6 is light that is directed toward the adjacent LED chip 1 among the light emitted from the LED chips 1 between the adjacent LED chips 1 (in FIG. 1). An interface that reflects the broken line arrow) to the wavelength conversion layer 3 side facing the one surface 2a between the LED chips 1 by refraction of light is provided.

より具体的には、照明装置10は、たとえば、矩形平板状のアルミナセラミック基板上にAuでメッキされた一対の導体パターン(図示していない)が形成された実装基板2を用いている。実装基板2の上記一表面2aに実装されたLEDチップ1は、それぞれサファイア基板上にn型の窒化ガリウム系化合物半導体層、Inが含有された窒化ガリウム系化合物半導体からなる発光層、p型の窒化ガリウム系化合物半導体層が順に積層されている。LEDチップ1は、前記p型の窒化ガリウム系化合物半導体層および前記発光層の一部が除去されて前記n型の窒化ガリウム系化合物半導体層が部分的に露出しており、同一平面側にp型およびn型の各窒化ガリウム系化合物半導体層と電気的に接続されるアノード電極およびカソード電極がそれぞれ設けられている。LEDチップ1は、LEDチップ1の同一平面側に設けられた前記アノード電極および前記カソード電極を、実装基板2の一対の導体パターン上に、それぞれ設けられた複数個のAuバンプ(図示していない)とフリップチップ実装させて給電可能に実装されている。   More specifically, the lighting device 10 uses, for example, a mounting substrate 2 in which a pair of conductor patterns (not shown) plated with Au is formed on a rectangular flat alumina ceramic substrate. The LED chip 1 mounted on the one surface 2a of the mounting substrate 2 includes an n-type gallium nitride compound semiconductor layer, a light emitting layer made of a gallium nitride compound semiconductor containing In, and a p-type on a sapphire substrate, respectively. Gallium nitride compound semiconductor layers are sequentially stacked. In the LED chip 1, a part of the p-type gallium nitride compound semiconductor layer and the light emitting layer are removed, and the n-type gallium nitride compound semiconductor layer is partially exposed. An anode electrode and a cathode electrode that are electrically connected to each of the n-type and n-type gallium nitride compound semiconductor layers are provided. The LED chip 1 includes a plurality of Au bumps (not shown) each provided with the anode electrode and the cathode electrode provided on the same plane side of the LED chip 1 on a pair of conductor patterns on the mounting substrate 2. ) And flip chip mounting so that power can be supplied.

実装基板2の上記一表面2a上にそれぞれ実装された複数個のLEDチップ1は、通電により発光する青色光のピーク波長が、たとえば、450nmから470nmの範囲内にある光をそれぞれ放射する。   The plurality of LED chips 1 respectively mounted on the one surface 2a of the mounting substrate 2 emit light having a peak wavelength of blue light emitted by energization within a range of, for example, 450 nm to 470 nm.

被覆部4は、LEDチップ1をそれぞれ被覆し上記一表面2aから滑らかに隆起した凸形状であって、屈折率が約1.41となるジメチル系のシリコーン樹脂により形成させた第一の被覆部材5と、該第一の被覆部材5よりも屈折率が大きい約1.5となるフェニル系のシリコーン樹脂により形成させた第二の被覆部材6とを備えている。第二の被覆部材6の一方の主面側(図1中の下側)は、第一の被覆部材5を各別に収納する複数個の凹部6aと、LEDチップ1同士の間に配置される複数個の凸部6bとを備えており、第二の被覆部材6の他方の主面側(図1中の上側)は、平滑な平滑部6cを備えている。本実施形態の照明装置10は、隣接するLEDチップ1同士の間で、LEDチップ1から放射された光のうち、隣接するLEDチップ1側に向かう光を、光の屈折によって、LEDチップ1同士の間における上記一表面2aと対向する波長変換層3側に反射させる第二の被覆部材6の界面が、上記一表面2aから滑らかに隆起した第二の被覆部材6の凸形状の表面となる。   The covering portion 4 is a first covering member that is formed by a dimethyl-based silicone resin that covers the LED chip 1 and has a convex shape that is smoothly raised from the one surface 2a and has a refractive index of about 1.41. 5 and a second covering member 6 formed of a phenyl silicone resin having a refractive index of about 1.5, which is higher than that of the first covering member 5. One main surface side (the lower side in FIG. 1) of the second covering member 6 is disposed between the plurality of recesses 6 a that individually accommodate the first covering member 5 and the LED chips 1. The other main surface side (upper side in FIG. 1) of the 2nd coating | coated member 6 is equipped with the smooth smooth part 6c. In the illumination device 10 of the present embodiment, among the light emitted from the LED chips 1 between the adjacent LED chips 1, the light directed toward the adjacent LED chips 1 is converted into the LED chips 1 by refraction of light. The interface of the second covering member 6 to be reflected to the wavelength conversion layer 3 side facing the one surface 2a in between is the convex surface of the second covering member 6 smoothly raised from the one surface 2a. .

また、波長変換層3は、LEDチップ1から放射された青色光を吸収して黄色の蛍光が発光可能な黄色蛍光体(たとえば、Ceで付活されたYAl12など)をバインダーとなるフェニル系のシリコーン樹脂中に均一に分散させ、外形を第二の被覆部材6に配置可能な、厚さ約200μmのフィルム状に形成している。波長変換層3は、第二の被覆部材6の平滑な平滑部6c上に透光性を有する接着剤により接着している。 Further, the wavelength conversion layer 3 is made of a yellow phosphor (for example, Y 3 Al 5 O 12 activated by Ce) that can absorb yellow light emitted from the LED chip 1 and emit yellow fluorescence. The film is uniformly dispersed in a phenyl silicone resin, and the outer shape is formed in a film shape having a thickness of about 200 μm that can be disposed on the second covering member 6. The wavelength conversion layer 3 is adhered to the smooth smooth portion 6c of the second covering member 6 with a translucent adhesive.

ところで、図1に示す本実施形態の照明装置10において、LEDチップ1から隣接するLEDチップ1側に放射された青色光は、第一の被覆部材5を透過し第二の被覆部材6の凸部6bに入射する。第二の被覆部材6に入射した青色光は、光の屈折によって、隣接するLEDチップ1を被覆し第二の被覆部材6よりも屈折率の小さい第一の被覆部材5と、第二の被覆部材6との界面で全反射され、波長変換層3を介して照明装置10の外部に放射される。したがって、本実施形態の照明装置10は、照明装置10の光出射面において、LEDチップ1が配置された位置だけでなく、隣接するLEDチップ1同士の間の位置からも光が放射され、隣接するLEDチップ1同士の間で照明装置10の発光強度が弱くなることを抑制することが可能となる。また、このような光の屈折を用いた第二の被覆部材6の界面での反射は、鏡のように、隣接するLEDチップ1同士から放射された光を全て完全に反射させるものでもないため、照明装置10全体として、照明装置10から放射される光出力の均一性をより向上させることができる。   By the way, in the illuminating device 10 of this embodiment shown in FIG. 1, the blue light radiated | emitted from the LED chip 1 to the adjacent LED chip 1 side permeate | transmits the 1st coating | coated member 5, and is convex of the 2nd coating | coated member 6. It enters the part 6b. The blue light incident on the second covering member 6 covers the adjacent LED chip 1 by refraction of the light and has a lower refractive index than the second covering member 6, and the second covering member. The light is totally reflected at the interface with the member 6 and radiated to the outside of the illumination device 10 through the wavelength conversion layer 3. Therefore, in the illumination device 10 of the present embodiment, light is emitted not only from the position where the LED chip 1 is disposed but also from the position between the adjacent LED chips 1 on the light emission surface of the illumination device 10. It becomes possible to suppress that the emitted light intensity of the illuminating device 10 becomes weak between LED chip 1 to perform. In addition, the reflection at the interface of the second covering member 6 using the refraction of light does not completely reflect all the light emitted from the adjacent LED chips 1 like a mirror. Moreover, the uniformity of the light output radiated | emitted from the illuminating device 10 can be improved more as the illuminating device 10 whole.

すなわち、本実施形態の照明装置10は、図1で例示するように、LEDチップ1から放射された光のうち、隣接するLEDチップ1側に向かう光(図1中の破線の矢印参照)が、第二の被覆部材6に入射して第二の被覆部材6中を透過し、第二の被覆部材6と、隣接するLEDチップ1を被覆する第一の被覆部材5との界面で全反射するように構成している。いいかえれば、照明装置10の第二の被覆部材6の界面が、LEDチップ1から放射された光のうち、隣接するLEDチップ1側に向かう光(図1中の破線の矢印参照)をLEDチップ1の光軸(ここでは、LEDチップ1の上面における法線方向)に近づく方向に反射させている。このような、光の屈折による全反射を生じさせるために、第二の被覆部材6は、上記光と、第二の被覆部材6の上記光が照射される表面での接線の垂線とのなす角度が、臨界角以上となるように設計すればよい。   That is, as illustrated in FIG. 1, the illumination device 10 according to the present embodiment is configured to receive light (refer to broken arrows in FIG. 1) toward the adjacent LED chip 1 among the light emitted from the LED chips 1. , Is incident on the second covering member 6, passes through the second covering member 6, and is totally reflected at the interface between the second covering member 6 and the first covering member 5 covering the adjacent LED chip 1. It is configured to do. In other words, of the light emitted from the LED chip 1 at the interface of the second covering member 6 of the lighting device 10, the light directed toward the adjacent LED chip 1 side (see the broken arrow in FIG. 1) is the LED chip. 1 is reflected in a direction approaching the optical axis (here, the normal direction on the upper surface of the LED chip 1). In order to cause such total reflection due to light refraction, the second covering member 6 forms the light and a tangential perpendicular to the surface of the second covering member 6 on which the light is irradiated. What is necessary is just to design so that an angle may become more than a critical angle.

以下、本実施形態の照明装置10に用いられる各構成について詳述する。   Hereinafter, each structure used for the illuminating device 10 of this embodiment is explained in full detail.

本実施形態1の照明装置10に用いられる発光素子は、通電により光を発光可能な半導体素子である。発光素子の放射する光は、たとえば、可視光のうちピーク波長が450nmから470nmの範囲内にある青色光とすることができるが、青色光のみに限定するものではなく、他の波長の光や波長変換層3を効率よく励起させるために紫外線を用いてもよい。発光素子たるLEDチップ1としては、たとえば、サファイア基板、スピネル基板、窒化ガリウム基板、酸化亜鉛基板や炭化シリコン基板などの結晶成長基板上にn型の窒化ガリウム系化合物半導体層、多重量子井戸構造や単一量子井戸構造の発光層となるインジウムが含有された窒化ガリウム系化合物体層、p型の窒化ガリウム系化合物半導体層を順に積層させたものが挙げられる。このようなLEDチップ1は、大きさが約1mm角で、厚み約100μmで形成することができる。   The light emitting element used in the illumination device 10 of the first embodiment is a semiconductor element that can emit light when energized. The light emitted from the light-emitting element can be, for example, blue light having a peak wavelength in the range of 450 nm to 470 nm of visible light, but is not limited to blue light. Ultraviolet light may be used to excite the wavelength conversion layer 3 efficiently. As the LED chip 1 which is a light emitting element, for example, an n-type gallium nitride compound semiconductor layer, a multiple quantum well structure or the like is formed on a crystal growth substrate such as a sapphire substrate, a spinel substrate, a gallium nitride substrate, a zinc oxide substrate or a silicon carbide substrate. For example, a gallium nitride compound body layer containing indium and a p-type gallium nitride compound semiconductor layer, which are light emitting layers having a single quantum well structure, are sequentially stacked. Such an LED chip 1 can be formed with a size of about 1 mm square and a thickness of about 100 μm.

なお、絶縁性基板を用いたLEDチップ1は、前記p型の窒化ガリウム系半導体層側から前記n型の窒化ガリウム系化合物半導体層の一部を露出させることにより、同一平面側でアノード電極におよびカソード電極をそれぞれ形成することができる。また、導電性基板を用いたLEDチップ1は、LEDチップ1の厚み方向の両面側にアノード電極やカソード電極を形成すればよい。   The LED chip 1 using an insulating substrate is exposed to the anode electrode on the same plane side by exposing a part of the n-type gallium nitride compound semiconductor layer from the p-type gallium nitride semiconductor layer side. And a cathode electrode can be formed respectively. The LED chip 1 using a conductive substrate may be formed with an anode electrode and a cathode electrode on both sides in the thickness direction of the LED chip 1.

LEDチップ1に設けられる前記アノード電極や前記カソード電極は、Ni膜とAu膜との積層膜、Al膜、ITO膜など窒化ガリウム系化合物半導体層などと良好なオーミック特性が得られる材料であれば、限定されるものではない。   The anode electrode or the cathode electrode provided on the LED chip 1 is a material that can obtain good ohmic characteristics with a laminated film of a Ni film and an Au film, a gallium nitride compound semiconductor layer such as an Al film, an ITO film, or the like. It is not limited.

同一平面側に前記アノード電極および前記カソード電極が設けられたLEDチップ1は、実装基板2上の一対の導電パターンに、たとえば、直径が0.07mmで高さが0.05mmのAuバンプなどの金属バンプを用いてフリップチップ実装させることができる。また、LEDチップ1として、厚み方向の両面側に前記アノード電極や前記カソード電極が形成されたLEDチップ1を用いる場合は、LEDチップ1が実装される実装基板2上に形成された一対の導体パターンのうちの一方の導体パターンと、LEDチップ1の前記アノード電極あるいは前記カソード電極とを導電性部材(たとえば、AuSnやAgペーストなど)を介してダイボンディングなどして電気的に接続させる。また、LEDチップ1の光取り出し面側の他方の前記カソード電極あるいは前記アノード電極は、ワイヤ(たとえば、金線やアルミニウム線など)を介して他方の導体パターンと電気的に接続させればよい。   The LED chip 1 provided with the anode electrode and the cathode electrode on the same plane side has a pair of conductive patterns on the mounting substrate 2 such as Au bumps having a diameter of 0.07 mm and a height of 0.05 mm. Flip chip mounting can be performed using metal bumps. When the LED chip 1 having the anode electrode or the cathode electrode formed on both sides in the thickness direction is used as the LED chip 1, a pair of conductors formed on the mounting substrate 2 on which the LED chip 1 is mounted. One conductor pattern of the patterns and the anode electrode or the cathode electrode of the LED chip 1 are electrically connected by die bonding or the like via a conductive member (for example, AuSn or Ag paste). The other cathode electrode or anode electrode on the light extraction surface side of the LED chip 1 may be electrically connected to the other conductor pattern via a wire (for example, a gold wire or an aluminum wire).

LEDチップ1として、特に、インジウムを含有した窒化ガリウム系化合物半導体層からなる発光層を窒化ガリウム、窒化アルミニウムや窒化アルミニウムガリウムなどからなるクラッド層で挟んだダブルヘテロ構造とする場合は、前記発光層と前記クラッド層の材料間の屈折率差から前記発光層の端面から放射される光が多く、本実施形態の照明装置10の効果に大きく寄与することになる。   When the LED chip 1 has a double hetero structure in which a light emitting layer made of a gallium nitride compound semiconductor layer containing indium is sandwiched between clad layers made of gallium nitride, aluminum nitride, aluminum gallium nitride or the like, the light emitting layer From the difference in refractive index between the materials of the cladding layer and the clad layer, much light is emitted from the end face of the light emitting layer, which greatly contributes to the effect of the illumination device 10 of the present embodiment.

なお、本実施形態の図1に示す照明装置10では、実装基板2の上記一表面2aに三個のLEDチップ1を実装しているが、LEDチップ1の数は、これに限定されるものでもなく適宜増減することができる。この場合、各LEDチップ1は、実装基板2の導体パターンを利用して、適宜に直列、並列や直並列に電気的に接続させればよい。また、LEDチップ1は、同種のものを用いてもよいし、異なる発光波長の光を発光する複数個のLEDチップ1を用いてもよい。   In the illumination device 10 shown in FIG. 1 of the present embodiment, three LED chips 1 are mounted on the one surface 2a of the mounting substrate 2, but the number of LED chips 1 is limited to this. It can be increased or decreased as appropriate. In this case, each LED chip 1 may be electrically connected appropriately in series, parallel, or series-parallel using the conductor pattern of the mounting substrate 2. Moreover, the LED chip 1 may use the same kind, and may use the some LED chip 1 which light-emits the light of a different light emission wavelength.

次に、本実施形態の照明装置10に用いられる実装基板2は、発光素子たるLEDチップ1がそれぞれ実装可能なものである。また、実装基板2は、実装基板2上の前記一対の導体パターン(たとえば、最表面がAuでメッキされた導体パターン)を利用して、LEDチップ1の通電経路を構成してもよい。このような実装基板2は、アルミナや窒化アルミニウムなどを用いたセラミック基板、Cu、AlやFeなどの金属材料を用いた金属ベース基板やガラスエポキシ樹脂基板などを用いることができる。実装基板2としてアルミナセラミック基板を用いた場合は、ガラスエポキシ樹脂基板などと比較して熱伝導率も高く、LEDチップ1の点灯で生じた熱を外部に効率よく放熱させ照明装置10の放熱性を高めることができる。   Next, the mounting substrate 2 used in the lighting device 10 of the present embodiment can mount the LED chip 1 as a light emitting element. In addition, the mounting substrate 2 may constitute an energization path of the LED chip 1 by using the pair of conductor patterns (for example, a conductor pattern plated with Au on the outermost surface) on the mounting substrate 2. As such a mounting substrate 2, a ceramic substrate using alumina, aluminum nitride, or the like, a metal base substrate using a metal material such as Cu, Al, or Fe, a glass epoxy resin substrate, or the like can be used. When an alumina ceramic substrate is used as the mounting substrate 2, the heat conductivity is higher than that of a glass epoxy resin substrate or the like, and the heat generated by lighting the LED chip 1 is efficiently radiated to the outside so that the heat dissipation of the lighting device 10 is achieved. Can be increased.

なお、本実施形態の照明装置10の実装基板2は、大きさ約5mm角で、厚みが約0.3mmである矩形平板状に形成しているが、実装基板2の上記一表面2aの外周部に、LED1から放射される光を外部に放射させやすくさせるために、側壁(図示していない)を別途設けても良い。前記側壁は、実装基板2の上記一表面2aから外部に向かって広がるテーパー部を有することで、照明装置10の外部に光を取り出し易くなり、照明装置10の光取り出し効率を向上させることができる。また、実装基板2は、前記側壁に、光を反射する反射層を設けてもよい。   The mounting substrate 2 of the lighting device 10 of the present embodiment is formed in a rectangular flat plate shape having a size of about 5 mm square and a thickness of about 0.3 mm, but the outer periphery of the one surface 2a of the mounting substrate 2 In order to make it easy to radiate the light radiated | emitted from LED1 outside to a part, you may provide a side wall (not shown) separately. Since the side wall has a tapered portion that spreads outward from the one surface 2a of the mounting substrate 2, light can be easily extracted to the outside of the lighting device 10, and light extraction efficiency of the lighting device 10 can be improved. . Further, the mounting substrate 2 may be provided with a reflective layer that reflects light on the side wall.

さらに、照明装置10は、実装基板2の上記一表面2aに、反射部(図示していない)を設けても良く、このような反射部は、LEDチップ1から放射される光を効率よく反射可能なものであって、具体的には、Al、Al合金、Ag、Ag合金などの金属材料やBaSOなどの白色顔料となる無機材料が含有されたガラス材料などを用いて構成すればよい。なお、前記反射部が導電性を有する場合、照明装置10は、LEDチップ1のそれぞれの前記アノード電極と前記カソード電極とが短絡しないように、前記反射部と前記一対の導体パターンとの間に絶縁層(図示していない)を適宜に形成させればよい。 Further, the lighting device 10 may be provided with a reflecting portion (not shown) on the one surface 2a of the mounting substrate 2, and such a reflecting portion efficiently reflects light emitted from the LED chip 1. Specifically, a metal material such as Al, Al alloy, Ag, or Ag alloy or a glass material containing an inorganic material that becomes a white pigment such as BaSO 4 may be used. . In addition, when the said reflection part has electroconductivity, the illuminating device 10 is between the said reflection part and the said pair of conductor pattern so that each said anode electrode and said cathode electrode of LED chip 1 may not short-circuit. An insulating layer (not shown) may be formed as appropriate.

実装基板2には、実装基板2の上記一表面2aから側面および裏面にも導体パターンを延設させて照明装置10の外部電極として構成してもよい。このような照明装置10の外部電極は、リフロー工程などによって配線基板(図示していない)と電気的に接続させることができる。   The mounting substrate 2 may be configured as an external electrode of the lighting device 10 by extending a conductor pattern from the one surface 2 a of the mounting substrate 2 to the side surface and the back surface. Such external electrodes of the illumination device 10 can be electrically connected to a wiring board (not shown) by a reflow process or the like.

本実施形態に用いられる波長変換層3は、複数個の発光素子たるLEDチップ1がそれぞれ放射する光の少なくとも一部を吸収して波長変換し、LEDチップ1からの光よりも長波長側に主発光波長となる蛍光を発するものである。   The wavelength conversion layer 3 used in the present embodiment absorbs at least a part of the light emitted by the LED chips 1 as a plurality of light emitting elements and converts the wavelength, so that the wavelength conversion layer 3 is longer wavelength than the light from the LED chip 1 It emits fluorescence which is the main emission wavelength.

波長変換層3は、たとえば、LEDチップ1から放射された光の一部を吸収して、より長波長側に主発光波長となる蛍光を放射する蛍光体をシリコーン樹脂、アクリル樹脂、エポキシ樹脂やガラスなどの透光性材料中に含有して形成すればよい。前記蛍光体を含有する波長変換層3の材料として、好ましくは、第二の被覆部材6と同程度以上の大きさの屈折率をもつ透光性材料が挙げられ、第二の被覆部材6の材料にシリコーン樹脂を用いる場合、前記蛍光体を含有する波長変換層3の材料としては、フェニル系のシリコーン樹脂が好適に挙げられる。   For example, the wavelength conversion layer 3 absorbs part of the light emitted from the LED chip 1 and emits a fluorescent material that emits fluorescence having a main emission wavelength on a longer wavelength side, such as a silicone resin, an acrylic resin, an epoxy resin, or the like. What is necessary is just to include and form in translucent materials, such as glass. As a material of the wavelength conversion layer 3 containing the phosphor, preferably, a translucent material having a refractive index equal to or larger than that of the second covering member 6 is used. When a silicone resin is used as the material, a preferable example of the material of the wavelength conversion layer 3 containing the phosphor is a phenyl silicone resin.

また、波長変換層3の厚みは、それぞれ照明装置10から放射する光の目標とする色温度、LEDチップ1から放射される青色光の発光強度や蛍光体の発光効率などによって異なるが、たとえば、前記蛍光体の濃度を50重量%以下とし、約200μmの厚みに形成することができる。   Further, the thickness of the wavelength conversion layer 3 varies depending on the target color temperature of the light emitted from the illumination device 10, the emission intensity of the blue light emitted from the LED chip 1, the luminous efficiency of the phosphor, etc. The phosphor can be formed to a thickness of about 200 μm with a concentration of 50% by weight or less.

青色光を発光するLEDチップ1を備え、照明装置10から白色光を放出させる場合、波長変換層3に含有される蛍光体は、補色となる黄色蛍光体だけに限らず、たとえば、照明装置10から、より演色性の高い白色光を放射させるため、緑色光が発光可能な緑色蛍光体(たとえば、Euで付活された(Sr,Ba)SiOなど)と、LEDチップ1からの青色光を吸収して赤色光が発光可能な赤色蛍光体(たとえば、Euで付活されたCaAlSiNなど)とを用いることもできる。したがって、波長変換層3に用いられる蛍光体としては、Euで付活されたBaSiOやEuで付活された(Sr,Ba)SiOなどの希土類でドープされた珪酸塩系の蛍光体のほか、たとえば、Ceで付活されたYAl12やCeで付活されたTbAl12などの希土類でドープされたアルミネート系の蛍光体、Euで付活されたCaAlSiN、Euで付活されたSrSi、Euで付活されたCaSi、Euで付活されたSrSi10やEuで付活されたCaSi10などの希土類でドープされた窒化物系の蛍光体を適宜に採用すればよい。 When the LED chip 1 that emits blue light is provided and white light is emitted from the illumination device 10, the phosphor contained in the wavelength conversion layer 3 is not limited to the complementary yellow phosphor, and for example, the illumination device 10. Therefore, in order to emit white light having higher color rendering properties, a green phosphor capable of emitting green light (for example, (Sr, Ba) 2 SiO 4 activated by Eu) is emitted from the LED chip 1 in blue. A red phosphor capable of absorbing light and emitting red light (for example, CaAlSiN 3 activated with Eu) can also be used. Therefore, as the phosphor used in the wavelength conversion layer 3, which is activated by activated with Ba 2 SiO 4 and Eu in Eu (Sr, Ba) 2, such as SiO 4 rare earth doped with the silicate Besides phosphors, for example, aluminate phosphors doped with rare earth such as Y 3 Al 5 O 12 activated with Ce and Tb 3 Al 5 O 12 activated with Ce, activated with Eu CaSi 7 which is activated with been CaAlSiN 3, Sr is activated by Eu 2 Si 5 N 8, Ca were activated by Eu 2 Si 5 N 8, Eu in-activated the SrSi 7 N 10 and Eu phosphor of the rare earth in doped a nitride, such as N 10 to may be properly adopted.

本実施形態に用いられる被覆部4は、透光性を有し、少なくとも発光素子たるLEDチップ1をそれぞれ被覆する第一の被覆部材5と、該第一の被覆部材5を被覆し該第一の被覆部材5よりも屈折率の大きい第二の被覆部材6とを備えている。   The covering portion 4 used in the present embodiment has translucency, and includes a first covering member 5 that covers at least the LED chip 1 that is a light emitting element, and a first covering member 5 that covers the first covering member 5. And a second covering member 6 having a refractive index larger than that of the covering member 5.

本実施形態に用いられる第一の被覆部材5は、発光素子たるLEDチップ1の内部で発光した光をLEDチップ1の外部へ取り出す効果を高める透光性の部材であって、LEDチップ1を被覆するものである。このような第一の被覆部材5の材料としては、たとえば、屈折率が1.41となるジメチル系のシリコーン樹脂などが挙げられる。第一の被覆部材5の形状は、たとえば、上記一表面2aから滑らかに隆起した凸形状とすることができる。また、第一の被覆部材5は、複数個のLEDチップ1をそれぞれ被覆できるように複数個設けてもよいし、複数個のLEDチップ1を被覆した一体となった一個だけのものでもよい。   The first covering member 5 used in the present embodiment is a translucent member that enhances the effect of taking out the light emitted inside the LED chip 1 that is a light emitting element to the outside of the LED chip 1. It is to be coated. Examples of the material of the first covering member 5 include a dimethyl silicone resin having a refractive index of 1.41. The shape of the 1st coating | coated member 5 can be made into the convex shape which protruded smoothly from the said one surface 2a, for example. The first covering member 5 may be provided in a plural number so as to cover each of the plurality of LED chips 1, or may be a single unit that covers the plurality of LED chips 1.

次に、本実施形態に用いられる第二の被覆部材6は、LEDチップ1から放射された光のうち、隣接するLEDチップ1側に向かう光を、光の屈折によって、第二の被覆部材6と、第二の被覆部材6中を透過し第二の被覆部材6から隣接するLEDチップ1を被覆する第一の被覆部材5との界面で反射させて、LEDチップ1同士の間における上記一表面2aに対向する波長変換層3側に反射させる界面を備えたものである。   Next, the second covering member 6 used in the present embodiment is a second covering member 6 by refraction of the light emitted from the LED chip 1 toward the adjacent LED chip 1 side by light refraction. And the first covering member 5 that passes through the second covering member 6 and covers the adjacent LED chip 1 from the second covering member 6, and the above-mentioned one between the LED chips 1. It has an interface for reflection on the wavelength conversion layer 3 side facing the surface 2a.

第二の被覆部材6の材料としては、第一の被覆部材5よりも屈折率の高い透光性の材料が用いられ、たとえば、屈折率が1.5程度となるフェニル系のシリコーン樹脂が挙げられる。第二の被覆部材6は、屈折率が1.5程度となるフェニル系のシリコーン樹脂以外にも、第一の被覆部材5に屈折率が1.41のジメチル系のシリコーン樹脂を用いた場合、屈折率が1.41より大きい樹脂、ガラスなどを適宜用いることができる。このような第二の被覆部材6の形状は、一方の主面側(図1中の下側)が、たとえば、第一の被覆部材5を収納する凹部6aと、LEDチップ1同士の間に配置される凸部6bとを備え、他方の主面側(図1中の上側)は、波長変換層3を配置できるように平滑な平滑部6cを備えた板状としている。また、第二の被覆部材6は、第二の被覆部材6の周部の端面から不要な光の漏れをなくするために、たとえば、Ag膜などにより遮光処理が施されていることがより好ましい。   As the material of the second covering member 6, a light-transmitting material having a higher refractive index than that of the first covering member 5 is used, for example, a phenyl silicone resin having a refractive index of about 1.5. It is done. When the second covering member 6 uses a dimethyl silicone resin having a refractive index of 1.41 for the first covering member 5 in addition to the phenyl silicone resin having a refractive index of about 1.5, A resin, glass, or the like having a refractive index greater than 1.41 can be used as appropriate. The shape of the second covering member 6 is such that one main surface side (the lower side in FIG. 1) is, for example, between the recess 6 a that houses the first covering member 5 and the LED chips 1. The other main surface side (the upper side in FIG. 1) has a plate shape including a smoothing portion 6 c so that the wavelength conversion layer 3 can be disposed. The second covering member 6 is more preferably subjected to a light shielding treatment with, for example, an Ag film in order to eliminate unnecessary light leakage from the end face of the peripheral portion of the second covering member 6. .

本実施形態の照明装置10では、各LEDチップ1が第一の被覆部材5でそれぞれ被覆され、各LEDチップ1および第一の被覆部材5が第二の被覆部材6で被覆されている。照明装置10は、第一の被覆部材5の屈折率を、第二の被覆部材6の屈折率よりも小さくしている。第一の被覆部材5は、第二の被覆部材6と接しており、好適には第一の被覆部材5が、第二の被覆部材6を被覆している。   In the illumination device 10 of the present embodiment, each LED chip 1 is covered with a first covering member 5, and each LED chip 1 and the first covering member 5 are covered with a second covering member 6. In the illumination device 10, the refractive index of the first covering member 5 is made smaller than the refractive index of the second covering member 6. The first covering member 5 is in contact with the second covering member 6, and preferably the first covering member 5 covers the second covering member 6.

このような第一の被覆部材5および第二の被覆部材6は、各LEDチップ1を被覆し、可視域において透光性の高い透光性材料を好適に用いることができる。第一の被覆部材5および第二の被覆部材6の具体的な材料としては、シリコーン樹脂、アクリル樹脂、エポキシ樹脂やガラスなどが挙げられ、使用する部位に応じて適した屈折率を有する材料を適宜に採用すればよい。エポキシ樹脂は、たとえば、屈折率が1.55から1.61とすることができ、シリコーン樹脂は、屈折率が1.35から1.53とすることができる。   Such 1st coating | coated member 5 and 2nd coating | coated member 6 coat | cover each LED chip 1, and can use suitably the translucent material with high translucency in a visible region. Specific materials of the first covering member 5 and the second covering member 6 include silicone resin, acrylic resin, epoxy resin, glass, and the like, and a material having a refractive index suitable for the part to be used. What is necessary is just to employ | adopt suitably. For example, the epoxy resin can have a refractive index of 1.55 to 1.61, and the silicone resin can have a refractive index of 1.35 to 1.53.

第一の被覆部材5および第二の被覆部材6としてシリコーン樹脂を用いた場合は、第一の被覆部材5としてフェニル系のシリコーン樹脂を用い、第二の被覆部材6としてフッ素系のシリコーン樹脂を用いることで、第一の被覆部材5の屈折率を第二の被覆部材6の屈折率よりも高くすることもできる。   When a silicone resin is used as the first covering member 5 and the second covering member 6, a phenyl type silicone resin is used as the first covering member 5, and a fluorine type silicone resin is used as the second covering member 6. By using it, the refractive index of the first covering member 5 can be made higher than the refractive index of the second covering member 6.

なお、本実施形態の照明装置10は、図2に示す照明装置10のように、LEDチップ1を覆う第一の被覆部材5と第二の被覆部材6との間に空気層7を設けても良い。この場合、照明装置10は、第二の被覆部材6と第一の被覆部材5とを接して構成させたものと比較して、第二の被覆部材6と空気層7との屈折率差が大きくなる。そのため、照明装置10は、第二の被覆部材6と空気層7との界面での全反射成分が多くなり、より色むらが低減することができる。   In addition, the illuminating device 10 of this embodiment provides the air layer 7 between the 1st coating | coated member 5 which covers the LED chip 1, and the 2nd coating | coated member 6 like the illuminating device 10 shown in FIG. Also good. In this case, the illuminating device 10 has a difference in refractive index between the second covering member 6 and the air layer 7 as compared with a configuration in which the second covering member 6 and the first covering member 5 are in contact with each other. growing. Therefore, the illuminating device 10 increases the total reflection component at the interface between the second covering member 6 and the air layer 7 and can further reduce color unevenness.

また、照明装置10の第二の被覆部材6の界面は、個々のLEDチップ1に対してそれぞれ同一の形状で形成させてもよいし、それぞれ異なる形状で形成させても良い。すなわち、複数個のLEDチップ1が密集する場合では、LEDチップ1からの光を反射する光を抑制するように界面の角度を設定すればよい。同様に、照明装置10のLEDチップ1は、実装基板2上に必ずしも等間隔で配置させる必要もなく、LEDチップ1の発光出力や第二の被覆部材6の形状などによって適宜の距離で配置させることができる。   Moreover, the interface of the 2nd coating | coated member 6 of the illuminating device 10 may be formed in the same shape with respect to each LED chip 1, respectively, and may be formed in a respectively different shape. That is, when a plurality of LED chips 1 are densely packed, the angle of the interface may be set so as to suppress the light that reflects the light from the LED chip 1. Similarly, the LED chips 1 of the lighting device 10 do not necessarily have to be arranged on the mounting substrate 2 at equal intervals, and are arranged at an appropriate distance depending on the light emission output of the LED chip 1 and the shape of the second covering member 6. be able to.

さらに、第二の被覆部材6の形状は、隣接するLEDチップ1から放射される光の角度で適宜設定すればよく、滑らかな曲線だけでなく波長変換層3側に光を反射させる傾斜角を持った階段状に形成させてもよい。   Furthermore, the shape of the second covering member 6 may be set as appropriate according to the angle of light emitted from the adjacent LED chip 1, and has an inclination angle that reflects light not only on a smooth curve but also on the wavelength conversion layer 3 side. It may be formed in a stepped shape.

次に、本実施形態の図1に示す照明装置10の製造工程について説明する。   Next, the manufacturing process of the illuminating device 10 shown in FIG. 1 of this embodiment is demonstrated.

まず、複数個のLEDチップ1を必要な光束や放熱等を考慮して実装基板2の上記一表面2aに形成された導体パターン上にAuバンプを用いてフリップチップ実装する。   First, a plurality of LED chips 1 are flip-chip mounted using Au bumps on a conductor pattern formed on the one surface 2a of the mounting substrate 2 in consideration of necessary light flux, heat dissipation, and the like.

また、照明装置10の第二の被覆部材6は、平板状であって一方の主面側には、実装基板2上にフリップチップ実装させた複数個のLEDチップをそれぞれ収納できる複数個の凹部6aが形成され、他方の主面側は、平滑面となる平滑部6cが形成できるように、予め金型にフェニル系のシリコーン樹脂を射出し、加熱硬化させることにより成形する。第二の被覆部材6は、第二の被覆部材6の複数個の凹部6aに第一の被覆部材5となるジメチル系のシリコーン樹脂を充填した上で、予めLEDチップ1を実装した実装基板2と貼り合わせて第一の被覆部材5を加熱硬化させる。   Further, the second covering member 6 of the lighting device 10 has a flat plate shape, and a plurality of recesses capable of accommodating a plurality of LED chips flip-chip mounted on the mounting substrate 2 on one main surface side. 6a is formed, and the other main surface side is molded by injecting a phenyl-type silicone resin in advance into a mold and heat-curing so that a smooth portion 6c that becomes a smooth surface can be formed. The second covering member 6 is a mounting substrate 2 on which the LED chip 1 is mounted in advance after filling a plurality of recesses 6 a of the second covering member 6 with a dimethyl-based silicone resin that becomes the first covering member 5. And the first covering member 5 is heat-cured.

また、別途に金型で、青色光を吸収して黄色の蛍光を放射可能な黄色蛍光体をシリコーン樹脂中に含有させた平板状の波長変換層3を成形させる。照明装置10は、第二の被覆部材6の平滑部6c上に波長変換層3を透光性の接着剤を用いて貼り付けることで形成することができる。   In addition, a plate-shaped wavelength conversion layer 3 in which a yellow phosphor capable of absorbing blue light and emitting yellow fluorescence is contained in a silicone resin is separately molded with a mold. The illuminating device 10 can be formed by affixing the wavelength conversion layer 3 on the smooth part 6c of the second covering member 6 using a translucent adhesive.

これにより、照明装置10は、第二の被覆部材6が第一の被覆部材5と接して被覆することになる。このような、第一の被覆部材5と第二の被覆部材6との界面の形状は、第二の被覆部材6の形成時における金型形状などにより、比較的簡単に変更することができる。また、波長変換層3は、予め形成させ第二の被覆部材6に貼り付けるだけでなく、スクリーン印刷法やインクジェット印刷法を利用して、第二の被覆部材6上に蛍光体を含有する透光性材料を塗布させて形成させることもできる。   As a result, the lighting device 10 covers the second covering member 6 in contact with the first covering member 5. The shape of the interface between the first covering member 5 and the second covering member 6 can be changed relatively easily depending on the mold shape when the second covering member 6 is formed. The wavelength conversion layer 3 is not only formed in advance and attached to the second covering member 6 but also a transparent material containing a phosphor on the second covering member 6 by using a screen printing method or an ink jet printing method. It can also be formed by applying a light material.

さらに、本実施形態の照明装置10の別の形成方法として、第一の被覆部材5および第二の被覆部材6は、たとえば、実装基板2の上記一表面2a上に各LEDチップ1をそれぞれフリップチップ実装後、最初に第一の被覆部材5となるジメチル系のシリコーン樹脂材料をLEDチップ1を包囲するように充填して加熱硬化して凸形状に形成する。次に、第二の被覆部材6は、第二の被覆部材6となるフェニル系のシリコーン樹脂材料を、第一の被覆部材5でそれぞれが被覆された複数個のLEDチップ1の全体を被覆するように実装基板2上に塗布して加熱硬化することにより形成することもできる。なお、第一の被覆部材5と第二の被覆部材6との界面の形状は、第一の被覆部材5の形成時、第一の被覆部材5となる透光性材料の粘度の調整などにより、比較的簡単に変更することができる。   Furthermore, as another forming method of the lighting device 10 of the present embodiment, the first covering member 5 and the second covering member 6 are each flipped each LED chip 1 on the one surface 2a of the mounting substrate 2, for example. After mounting the chip, first, a dimethyl silicone resin material to be the first covering member 5 is filled so as to surround the LED chip 1 and is heated and cured to form a convex shape. Next, the second covering member 6 covers the entirety of the plurality of LED chips 1 each covered with the first covering member 5 with a phenyl-based silicone resin material to be the second covering member 6. Thus, it can also be formed by coating on the mounting substrate 2 and heat curing. In addition, the shape of the interface between the first covering member 5 and the second covering member 6 can be adjusted by adjusting the viscosity of the translucent material to be the first covering member 5 when the first covering member 5 is formed. Can be changed relatively easily.

このように形成された本実施形態の照明装置10は、光出射面を見ても、照明装置10から放射される光量が、LEDチップ1が配置された位置と、LEDチップ1同士の間となる位置とで、光出力差が小さくなり、色むらなどが低減される。その結果、照明装置10は、波長変換層3の光出射面側にレンズや反射鏡を配置した場合においても、照明装置10から放射される光の被照射面の色むらなどを低減することができる。また、本実施形態の照明装置10は、色むらなどを低減させるために、拡散材や反射材の粉体を混合しなくてもよい。そのため、拡散効果や反射効果のある粉体11などにより、光の拡散性を高めた上述の照明装置10’と比較して、拡散効果や反射効果のある粉体11の光の吸収などによる光取り出し効率の低下を抑制でき、拡散性などを向上させることができる。なお、本実施形態の照明装置10は、仮に、拡散効果や反射効果のある粉体11を被覆部4に混合させても、上述の照明装置10’と比較して、より少ない使用量で色むらを低減させることができる。   In the illumination device 10 of the present embodiment formed in this way, even when the light emission surface is viewed, the amount of light emitted from the illumination device 10 is between the position where the LED chip 1 is disposed and between the LED chips 1. Therefore, the light output difference is reduced, and the color unevenness is reduced. As a result, the illuminating device 10 can reduce unevenness in the color of the irradiated surface of the light emitted from the illuminating device 10 even when a lens or a reflecting mirror is disposed on the light emitting surface side of the wavelength conversion layer 3. it can. In addition, the lighting device 10 according to the present embodiment does not have to mix powder of a diffusing material or a reflecting material in order to reduce color unevenness. Therefore, the light by the light absorption of the powder 11 having the diffusion effect and the reflection effect is compared with the above-described lighting device 10 ′ in which the light diffusion property is enhanced by the powder 11 having the diffusion effect and the reflection effect. A decrease in extraction efficiency can be suppressed, and diffusibility and the like can be improved. Note that the lighting device 10 of the present embodiment has a smaller usage amount than the above-described lighting device 10 ′ even if the powder 11 having a diffusion effect or a reflection effect is mixed with the covering portion 4. Unevenness can be reduced.

(実施形態2)
本実施形態は、図1で示した実施形態1の第二の被覆部材6の代わりに、図3に示すようにLEDチップ1の厚み方向に沿った光放射方向に、第二の被覆部材6よりも屈折率が小さい第三の被覆部材8を設けた第二の被覆部材6を用いる点が異なる。なお、実施形態1と同様の構成要素には、同一の符号を付して説明を適宜省略する。
(Embodiment 2)
In this embodiment, instead of the second covering member 6 of the first embodiment shown in FIG. 1, the second covering member 6 is arranged in the light emission direction along the thickness direction of the LED chip 1 as shown in FIG. 3. The difference is that a second covering member 6 provided with a third covering member 8 having a smaller refractive index is used. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted suitably.

本実施形態の照明装置10の第二の被覆部材6に設けられた第三の被覆部材8は、LEDチップ1で発光した光のうち、LEDチップ1の厚み方向に沿った光放射方向に進んだ光を、第三の被覆部材8と第二の被覆部材6との界面で屈折させて、複数個のLEDチップ1同士の間における上記一表面2aと対向する波長変換部材3側に青色光を導くことができる。これにより、照明装置10は、照明装置10の光出射面での色むらが、より少なく光取り出し効率を高めることができる。   The third covering member 8 provided on the second covering member 6 of the lighting device 10 of the present embodiment proceeds in the light emission direction along the thickness direction of the LED chip 1 out of the light emitted from the LED chip 1. The blue light is refracted at the interface between the third covering member 8 and the second covering member 6 and blue light is emitted to the wavelength conversion member 3 side facing the one surface 2a between the LED chips 1. Can guide you. Thereby, the illuminating device 10 has less color unevenness on the light emitting surface of the illuminating device 10, and can improve the light extraction efficiency.

このような第三の被覆部材8の材料としては、たとえば、屈折率が約1.41となるジメチル系のシリコーン樹脂を用いた第一の被覆部材5と、屈折率が約1.5となるフェニル系のシリコーン樹脂を用いた第二の被覆部材6との中間の屈折率を持つシリコーン樹脂などが好適に挙げられ、第一の被覆部材5の屈折率より大きく第二の被覆部材6よりも小さい屈折率を持つ樹脂やガラスなどを好適に用いることができる。   Examples of the material of the third covering member 8 include the first covering member 5 using a dimethyl silicone resin having a refractive index of about 1.41, and a refractive index of about 1.5. A silicone resin having an intermediate refractive index with respect to the second covering member 6 using a phenyl-based silicone resin is preferably exemplified, and is larger than the refractive index of the first covering member 5 and larger than that of the second covering member 6. Resins or glass having a small refractive index can be preferably used.

本実施形態の照明装置10は、複数個のLEDチップ1を必要な光束や放熱等を考慮して実装基板2に実装する。次に、フェニル系のシリコーン樹脂からなる第二の被覆部材6を金型で所定の形状に成形する。第三の被覆部材8は、第二の被覆部材6の複数個の凹部6aの底部の一部を充填するように第三の被覆部材8の材料となるシリコーン樹脂を充填し硬化させることにより成形する。続いて、第二の被覆部材6は、第二の被覆部材6の凹部6aの内部で、第三の被覆部材8上に第一の被覆部材5の材料となるジメチル系のシリコーン樹脂を凹部6aが一杯になるまで充填する。第二の被覆部材6の凹部6aの底部に、第三の被覆部材8が形成され、凹部6aに第一の被覆部材5の材料となる樹脂が充填された第二の被覆部材6を、LEDチップ1が実装された実装基板2に貼り合わせて加熱硬化させる。続いて、予め金型で成形した波長変換層3を、第二の被覆部材6上に透光性の接着剤で貼り付けることで、本実施形態の照明装置10を形成することができる。   The illuminating device 10 of this embodiment mounts a plurality of LED chips 1 on the mounting substrate 2 in consideration of necessary light flux, heat dissipation, and the like. Next, the second covering member 6 made of phenyl silicone resin is formed into a predetermined shape with a mold. The third covering member 8 is formed by filling and curing a silicone resin as a material of the third covering member 8 so as to fill a part of the bottom of the plurality of recesses 6a of the second covering member 6. To do. Subsequently, the second covering member 6 is formed by applying a dimethyl silicone resin as a material of the first covering member 5 on the third covering member 8 inside the recessed portion 6a of the second covering member 6. Fill until full. A third covering member 8 is formed at the bottom of the recess 6a of the second covering member 6, and the second covering member 6 in which the resin serving as the material of the first covering member 5 is filled in the recess 6a is connected to the LED. The chip 1 is bonded to the mounting substrate 2 on which the chip 1 is mounted, and is cured by heating. Then, the illuminating device 10 of this embodiment can be formed by sticking the wavelength conversion layer 3 previously shape | molded with the metal mold | die on the 2nd coating | coated member 6 with a translucent adhesive agent.

本実施形態の照明装置10は、LEDチップ1から放射され隣接するLEDチップ1側に向かった青色光が、実施形態1の照明装置10と同様に外部に放射される。また、LEDチップ1の厚み方向に沿った光放射方向の青色光は、第三の被覆部材8から第二の被覆部材6に入射する場合に、第三の被覆部材8と第二の被覆部材6との屈折率差によって、一部がLEDチップ1同士の間における上記一表面2aと対向する波長変換層3側に屈折する。これにより、照明装置10は、光出射面を見て、LEDチップ1が配置された位置と、LEDチップ1同士の間となる位置との、色むらなどがより低減される。   In the illumination device 10 of the present embodiment, blue light emitted from the LED chip 1 and directed toward the adjacent LED chip 1 is radiated to the outside in the same manner as the illumination device 10 of the first embodiment. Further, when the blue light in the light emission direction along the thickness direction of the LED chip 1 is incident on the second covering member 6 from the third covering member 8, the third covering member 8 and the second covering member are used. 6 is partly refracted toward the wavelength conversion layer 3 facing the one surface 2 a between the LED chips 1. Thereby, the illuminating device 10 sees a light-projection surface, and the color nonuniformity etc. of the position where the LED chip 1 is arrange | positioned, and the position between LED chips 1 are reduced more.

(実施形態3)
本実施形態は、実施形態1の照明装置10の第二の被覆部材6の構成に加え、図4に示すように、LEDチップ1同士の間における上記一表面2aと対向する第二の被覆部材6に該第二の被覆部材6の少なくとも一部を介して該第二の被覆部材6と接する第四の被覆部材9が設けられ、該第四の被覆部材9の屈折率を、第二の被覆部材6の屈折率よりも大きくした点が異なる。なお、実施形態1と同様の構成要素には、同一の符号を付して説明を適宜省略する。
(Embodiment 3)
In the present embodiment, in addition to the configuration of the second covering member 6 of the lighting device 10 of the first embodiment, as shown in FIG. 4, the second covering member facing the one surface 2 a between the LED chips 1. 6 is provided with a fourth covering member 9 in contact with the second covering member 6 through at least a part of the second covering member 6, and the refractive index of the fourth covering member 9 is set to the second covering member 9. The difference is that it is larger than the refractive index of the covering member 6. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted suitably.

本実施形態の照明装置10に用いられる図4に示す第二の被覆部材6の具体的な構成例としては、図3で示した実施形態2の第二の被覆部材6における他方の主面側(図3中の上側)全体を平滑な平滑部6cで構成する代わりに、図4の照明装置10で示す複数個のLEDチップ1同士の間における実装基板2の一表面2aと対向する第二の被覆部材6の他方の主面側(図4中の上側)に窪み部6dを設け、窪み部6dの内部に第二の被覆部材6よりも屈折率が大きい第四の被覆部材9を設けた構成が挙げられる。   As a specific configuration example of the second covering member 6 shown in FIG. 4 used in the lighting device 10 of the present embodiment, the other main surface side in the second covering member 6 of Embodiment 2 shown in FIG. (Upper side in FIG. 3) Instead of constituting the entire smoothing portion 6c, the second facing the surface 2a of the mounting substrate 2 between the plurality of LED chips 1 shown by the illumination device 10 in FIG. A recess 6d is provided on the other main surface side (upper side in FIG. 4) of the cover member 6, and a fourth cover member 9 having a higher refractive index than the second cover member 6 is provided inside the recess 6d. Configuration.

これにより、本実施形態の照明装置10は、光出射面を見て、複数個のLEDチップ1同士の間における上記一表面2aと対向する波長変換層3に向かうLEDチップ1からの光のうち、波長変換層3で反射などされた光を、第四の被覆部材9と第二の被覆部材6との界面で再び反射させることができる。   Thereby, the illuminating device 10 of this embodiment sees a light-projection surface, among the light from the LED chip 1 which goes to the wavelength conversion layer 3 facing the said one surface 2a between several LED chips 1 mutually. The light reflected by the wavelength conversion layer 3 can be reflected again at the interface between the fourth covering member 9 and the second covering member 6.

このような第四の被覆部材9の材料としては、第二の被覆部材6の屈折率以上の屈折率を持つ樹脂やガラスなどが考えられ、たとえば、屈折率が1.55程度のPMMA(ポリメタクリル酸メチル樹脂)などを好適に用いることができる。   As the material of the fourth covering member 9, a resin or glass having a refractive index higher than that of the second covering member 6 is conceivable. For example, PMMA (polyethylene having a refractive index of about 1.55) (Methyl methacrylate resin) can be preferably used.

第二の被覆部材6の上記他方の主面は、窪み部6dが第四の被覆部材9によって充填されて平滑な面としている。このような、第二の被覆部材6の上記他方の主面上に、波長変換層3を透光性の接着剤で接着して照明装置10を形成すればよい。   The other main surface of the second covering member 6 has a recess 6d filled with the fourth covering member 9 to be a smooth surface. The illumination device 10 may be formed by adhering the wavelength conversion layer 3 with a translucent adhesive on the other main surface of the second covering member 6.

なお、前記蛍光体を含有させる波長変換層3の材料としては、波長変換層3に接する第二の被覆部材6や第四の被覆部材9と同程度以上の屈折率をもつ、たとえば、フェニル系のシリコーン樹脂、アクリル樹脂やガラスなどを好適に用いることができる。   In addition, as a material of the wavelength conversion layer 3 containing the phosphor, the second coating member 6 or the fourth coating member 9 in contact with the wavelength conversion layer 3 has a refractive index equal to or higher than that, for example, a phenyl type Silicone resin, acrylic resin, glass and the like can be suitably used.

本実施形態の照明装置10は、より具体的には、複数個のLEDチップ1を必要な光束や放熱等を考慮して実装基板2上にフリップチップ実装する。続いて、予め、金型で射出成形で形成した第二の被覆部材6の上記一方の主面の凹部6aの底部に第三の被覆部材8の材料を充填して加熱硬化する。同様に、第二の被覆部材6の上記他方の主面側の窪み部6dの内部に第四の被覆部材9の材料を充填して加熱硬化させる。   More specifically, the lighting device 10 of the present embodiment flip-chip mounts a plurality of LED chips 1 on the mounting substrate 2 in consideration of necessary light flux, heat dissipation, and the like. Subsequently, the material of the third covering member 8 is filled in the bottom of the concave portion 6a on the one main surface of the second covering member 6 formed by injection molding with a mold in advance and is cured by heating. Similarly, the material of the fourth covering member 9 is filled in the inside of the recess 6d on the other main surface side of the second covering member 6 and is cured by heating.

つづいて、第二の被覆部材6の凹部6aの内部に第一の被覆部材5の材料となる樹脂を充填した状態で、第二の被覆部材6とLEDチップ1を実装した実装基板2とを貼り合わせて加熱硬化させる。また、別途に、成形した波長変換層3を、第二の被覆部材6上に透光性の接着剤で貼り付けることにより照明装置10を形成することができる。   Subsequently, the second covering member 6 and the mounting substrate 2 on which the LED chip 1 is mounted are filled in the recess 6a of the second covering member 6 with the resin as the material of the first covering member 5 being filled. Bond and heat cure. Alternatively, the lighting device 10 can be formed by attaching the molded wavelength conversion layer 3 on the second covering member 6 with a translucent adhesive.

なお、第二の被覆部材6の凹部6aや窪み部6dは、第二の被覆部材6の成形と同時に形成させてもよいし、第二の被覆部材6となる透光性を有する平板にドリルなどによる掘削、エッチングやレーザ照射を施すことにより、部分的に除去することで形成させてもよい。   Note that the recess 6 a and the recess 6 d of the second covering member 6 may be formed simultaneously with the molding of the second covering member 6, or a light-transmitting flat plate that becomes the second covering member 6 is drilled. For example, it may be formed by partial removal by performing excavation, etching, or laser irradiation.

本実施形態の照明装置10は、LEDチップ1同士の間における上記一表面2aと対向する波長変換層3側に第四の被覆部材9から入射したLEDチップ1の青色光のうち、第四の被覆部材9と波長変換層3の界面で反射された青色光が、第四の被覆部材9から第二の被覆部材6に臨界角以上で入射する場合、第四の被覆部材9と第二の被覆部材6との屈折率差によって全反射される。これにより、本実施形態の照明装置10は、第四の被覆部材9により、照明装置10の光出射面から放射される光の色むらがより少なく、光取り出し効率をさらに高くすることが可能となる。   The illuminating device 10 of this embodiment is the fourth of the blue light of the LED chip 1 incident from the fourth covering member 9 on the side of the wavelength conversion layer 3 facing the one surface 2a between the LED chips 1. When the blue light reflected at the interface between the covering member 9 and the wavelength conversion layer 3 is incident on the second covering member 6 from the fourth covering member 9 at a critical angle or more, the fourth covering member 9 and the second covering member 9 Total reflection is caused by the difference in refractive index from the covering member 6. As a result, the illumination device 10 of the present embodiment has less uneven color of the light emitted from the light exit surface of the illumination device 10 by the fourth covering member 9, and can further increase the light extraction efficiency. Become.

1 LEDチップ(発光素子)
2 実装基板
2a 一表面
3 波長変換層
4 被覆部
5 第一の被覆部材
6 第二の被覆部材
8 第三の被覆部材
9 第四の被覆部材
10 照明装置
1 LED chip (light emitting device)
2 mounting substrate 2a one surface 3 wavelength conversion layer 4 covering portion 5 first covering member 6 second covering member 8 third covering member 9 fourth covering member 10 illuminating device

Claims (3)

実装基板と、該実装基板の一表面上で離間して実装される複数個の発光素子と、該複数個の発光素子を被覆する被覆部を介して複数個の前記発光素子を覆い、前記発光素子から放射された光の少なくとも一部を波長変換する波長変換層と、を有する照明装置であって、前記被覆部は、前記発光素子をそれぞれ被覆する第一の被覆部材と、該第一の被覆部材を被覆し該第一の被覆部材よりも屈折率の大きい第二の被覆部材とを備え、該第二の被覆部材は、隣接する前記発光素子同士の間で、前記発光素子から放射された光のうち、隣接する前記発光素子側に向かう光を、光の屈折によって、前記発光素子同士の間における前記一表面と対向する前記波長変換層側に反射させる界面を備えてなることを特徴とする照明装置。   A plurality of light-emitting elements that are mounted on a surface of the mounting board, and a plurality of light-emitting elements that cover the plurality of light-emitting elements; A wavelength conversion layer that wavelength-converts at least a part of light emitted from the element, wherein the covering section includes a first covering member that covers each of the light emitting elements, and the first covering member. A second covering member that covers the covering member and has a higher refractive index than the first covering member, and the second covering member is radiated from the light emitting elements between the adjacent light emitting elements. The light is directed to the adjacent light emitting element side, and is reflected by the refraction of the light to the wavelength conversion layer side facing the one surface between the light emitting elements. A lighting device. 前記第二の被覆部材は、前記発光素子の厚み方向に沿った光放射方向に前記第二の被覆部材と接する第三の被覆部材を設けており、該第三の被覆部材は、前記第二の被覆部材よりも屈折率が小さいことを特徴とする請求項1に記載の照明装置。   The second covering member is provided with a third covering member in contact with the second covering member in a light emission direction along the thickness direction of the light emitting element, and the third covering member is provided with the second covering member. The illumination device according to claim 1, wherein the refractive index is smaller than that of the covering member. 前記第二の被覆部材は、前記発光素子同士の間における前記一表面と対向する前記第二の被覆部材に該第二の被覆部材の少なくとも一部を介して該第二の被覆部材と接する第四の被覆部材が設けられ、該第四の被覆部材は、前記第二の被覆部材よりも屈折率が大きいことを特徴とする請求項1または請求項2に記載の照明装置。
The second covering member is in contact with the second covering member through at least a part of the second covering member to the second covering member facing the one surface between the light emitting elements. The lighting device according to claim 1, wherein four covering members are provided, and the fourth covering member has a refractive index higher than that of the second covering member.
JP2009268072A 2009-11-25 2009-11-25 Lighting system Withdrawn JP2011114093A (en)

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US9997676B2 (en) 2014-05-14 2018-06-12 Genesis Photonics Inc. Light emitting device and manufacturing method thereof
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US10388838B2 (en) 2016-10-19 2019-08-20 Genesis Photonics Inc. Light-emitting device and manufacturing method thereof
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US9356205B2 (en) * 2014-06-12 2016-05-31 Genesis Photonics Inc. Light emitting component
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US11482653B2 (en) 2018-06-05 2022-10-25 Samsung Electronics Co., Ltd. Light emitting diode apparatus

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