JP2011108920A - Template, method of manufacturing the same, and method of forming pattern - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide: a template achieving a highly accurate size by correcting sizes of depressions and projections, and allowing a plurality of duplicate templates of different sizes to be efficiently produced from a same mother template; a method of manufacturing the template; and a method of forming a pattern. <P>SOLUTION: The template transfers a pattern onto a transfer layer 51 provided on a substrate 50 to be processed when pressed against the transfer layer. The template 110 includes a first die 10, wherein the first die has: a first substrate 11 having first depressions and projections 10dp provided on a first principal surface 11a; and a first film 12 covering the first depressions and projections and made of the same material as that of the first substrate. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a template, a template manufacturing method, and a pattern forming method.

  Nanoimprint method for transferring a master mold onto a substrate as a technology for forming fine patterns with high productivity in the manufacture of electronic devices having a fine structure such as semiconductor devices and MEMS (Micro Electro Mechanical System) devices Is attracting attention.

  In the nanoimprint method, an original mold (template) having a pattern to be transferred is pressed onto a resin on a substrate, and the resin is cured to transfer the pattern onto the resin on the substrate.

  In order to form a high-precision pattern, it is necessary to improve the accuracy of the unevenness of the template, and for this purpose, development of a method for correcting the size of the produced template is desired.

  In addition, it is desired to change the size of the unevenness of the template in response to the characteristic variation of various processing steps within the surface of the substrate to which the pattern is transferred. From the same mother template, a plurality of dimensions having different sizes can be obtained. Development of a technique for producing a duplicate template is desired.

  Patent Document 1 discloses a configuration in which an amorphous carbon film is formed on an uneven surface of a template in order to improve the releasability of the template.

JP 2007-266384 A

  The present invention corrects the size of the unevenness to realize a highly accurate dimension, and can efficiently produce a plurality of duplicate templates having different dimensions from the same mother template, a template manufacturing method, and A pattern forming method is provided.

  According to one aspect of the present invention, there is provided a template for transferring a pattern to a transfer layer by being pressed against a transfer layer provided on a substrate to be processed, the first main surface having a first unevenness. There is provided a template comprising a first mold having a first base and a first film that covers the first unevenness and is made of the same material as the first base.

  According to another aspect of the present invention, there is provided a method of manufacturing a template having a first mold for transferring a pattern to the transfer layer by being pressed against a transfer layer provided on a substrate to be processed, Forming the first mold by forming a first film made of the same material as the first base so as to cover the first unevenness of the first main surface of the first base serving as a part of the first mold; A template manufacturing method is provided.

  According to another aspect of the present invention, the mold pattern provided on the template having the first mold and the second mold is pressed against a transfer layer provided on the main surface of the substrate to be processed, so that the mold pattern is A transfer step of transferring to a transfer layer, wherein the first mold includes a first substrate having a first main surface provided with first irregularities, and a first material made of the same material as the first substrate covering the first irregularities. A second base made of the same material as the first base, wherein the second mold is provided with second concaves and convexes having the same dimensions as the first concaves and convexes on the second main surface, A second film that covers the second unevenness and is made of the same material as the second base and has a film thickness different from the first film, and in a first region in the main surface of the substrate to be processed In the second region different from the first region in the main surface, the transfer is performed using the first mold. A pattern forming method characterized in that the transcription is carried out using the second type is provided.

  According to the present invention, a highly accurate dimension is realized by correcting the dimension of the unevenness, and a template capable of efficiently producing a plurality of duplicate templates having different dimensions from the same mother template, a template manufacturing method, A pattern forming method is also provided.

It is a typical sectional view which illustrates the composition of the template concerning a 1st embodiment. It is a typical sectional view which illustrates composition of another template concerning a 1st embodiment. FIG. 5 is a schematic cross-sectional view in order of the processes, illustrating the pattern forming method using the template according to the first embodiment. It is a flowchart figure which illustrates the manufacturing method of the template which concerns on 2nd Embodiment. It is a flowchart figure which illustrates another manufacturing method of the template which concerns on 2nd Embodiment. It is a flowchart figure which illustrates another manufacturing method of the template which concerns on 2nd Embodiment. It is a flowchart figure which illustrates another manufacturing method of the template which concerns on 2nd Embodiment. It is a flowchart figure which illustrates another manufacturing method of the template which concerns on 2nd Embodiment. It is a flowchart figure which illustrates the pattern formation method which concerns on 3rd Embodiment. FIG. 10 is a schematic plan view illustrating a pattern forming method according to a third embodiment. It is a flowchart figure which illustrates another pattern formation method which concerns on 3rd Embodiment.

Embodiments of the present invention will be described below with reference to the drawings.
Note that the drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio coefficient of the size between the parts, and the like are not necessarily the same as actual ones. Further, even when the same part is represented, the dimensions and ratio coefficient may be represented differently depending on the drawing.
Further, in the present specification and each drawing, the same reference numerals are given to the same elements as those described above with reference to the previous drawings, and detailed description thereof will be omitted as appropriate.

(First embodiment)
The template according to the first embodiment of the present invention is a template for transferring an uneven pattern formed on the surface of the template to the transfer layer by being pressed against the transfer layer provided on the substrate to be processed. is there.

FIG. 1 is a schematic cross-sectional view illustrating the configuration of a template according to the first embodiment.
That is, FIG. 5A is a schematic cross-sectional view illustrating the outline of the template, and FIG. 5B is a schematic cross-sectional view illustrating the configuration of the first base that becomes a part of the template. This corresponds to an enlarged view of a partial AP of FIG. 10A, and FIG. 10C is a schematic cross-sectional view of the enlarged partial AP of FIG.

As shown in FIGS. 1A to 1C, the template 110 according to this embodiment includes a first mold 10.
The first mold 10 includes a first base 11 and a first film 12.

The first main surface 11 a of the first base 11 is provided with first unevenness 11 dp.
The 1st base | substrate 11 is a type | mold used as a mother template, for example. For example, quartz or the like can be used for the first base 11. However, the present invention is not limited to this, and the material used for the first base 11 is arbitrary. Hereinafter, the case where quartz is used for the first base 11 will be described.

  The first film 12 covers the first unevenness 11 dp of the first base 11 and is made of the same material as the first base 11. In this specific example, quartz is used for the first substrate 11, and a silicon oxide film is used for the first film 12.

  The first film 12 is provided by, for example, an ALD method (atomic layer deposition method), and the first film thickness t1 of the first film 12 is controlled with high accuracy. By using the ALD method, the coverage characteristics of the first film 12 are improved. Further, by using the ALD method, the first film thickness t1 of the first film 12 can be controlled with an accuracy of, for example, about 0.2 nm (nanometer).

  Note that the first film 12 is desirably formed at a low temperature. By lowering the film forming temperature, it is possible to suppress the change in the unevenness of the first unevenness 11dp of the first substrate 11, and to obtain the first mold 10 with higher accuracy. For example, the temperature of the first substrate 11 in forming the first film 12 can be set to 300 ° C. or lower.

  Here, a direction perpendicular to the first main surface 11a of the first base 11 is taken as a Z-axis direction. One direction perpendicular to the Z axis is taken as the X axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is taken as a Y-axis direction.

  The pattern shape (the shape when viewed from the Z-axis direction) of the first unevenness 11dp of the first base 11 is arbitrary, and is circular, flattened, square, rectangular, parallelogram, trapezoidal, arbitrary Various shapes such as a polygonal shape and a belt shape (a three-dimensional shape is a groove shape, that is, a trench shape) can be used.

  Further, the first unevenness 11dp may have a stepped side wall having a plurality of steps as well as a cross-sectional shape of one vertical step. The first unevenness 11dp may have, for example, a lens-like cross-sectional shape having a curved side wall. Thereby, the cross-sectional shape of the transferred pattern can be an arbitrary shape such as a stepped shape or a lens shape. Hereinafter, in order to simplify the description, the first unevenness 11dp will be described as a cross-sectional shape having a single vertical wall.

  In the following description, the X-axis direction and the Y-axis direction can be exchanged with each other. Hereinafter, as an example, the case where the first unevenness 11dp is a trench extending in the Y-axis direction will be described. That is, the first unevenness 11dp includes a first recess 11d extending in the Y-axis direction and a first protrusion 11p extending in the Y-axis direction. Hereinafter, the dimension along the X-axis direction and the dimension along the Z-axis direction will be described, and the description regarding the dimension along the Y-axis direction will be omitted. When the first unevenness 11dp has a pattern shape other than the groove shape (for example, a rectangular shape), the description regarding the dimension along the X-axis direction applies to the dimension along the Y-axis direction while changing the direction. it can.

  As shown in FIG. 1B, the first concave portion 11d and the first convex portion 11p are adjacent to each other along the X-axis direction. The width of the first recess 11d (the length along the X-axis direction) is the first recess width xa1. The width of the first protrusion 11p (the length along the X-axis direction) is the first protrusion width xb1. The first concave portion width xa1 and the first convex portion width xb1 may be the same or different from each other. The depth of the first concave portion 11d (the length in the Z-axis direction and the same as the height of the first convex portion 11p) is defined as the first concave portion depth d1.

  The first film 12 is provided so as to cover the first unevenness 11 dp (the first concave portion 11 d and the first convex portion 11 p) of the first base 11.

  As shown in FIG. 1C, the first film 12 has the same film thickness on the bottom surface and the side surface of the first recess 11d and on the top surface and the side surface of the first protrusion 11p. It is formed with a thickness t1. As a result, the first mold 10 after the first film 12 is formed has irregularities (first mold irregularities 10 dp) having dimensions different from the dimensions of the first irregularities 11 dp. The first mold unevenness 10dp has a shape reflecting the shape of the first unevenness 11dp based on the shape of the first unevenness 11dp. The 1st type unevenness | corrugation 10dp has the 1st type | mold recessed part 10d and the 1st type | mold convex part 10p.

The width (length along the X-axis direction) of the first mold recess 10d is the first mold recess width xc1. The width (the length along the X-axis direction) of the first mold convex part 10p is the first mold convex part width xd1.
The first mold recess width xc1 is (xa1-2 × t1), and the first mold recess width xc1 is smaller than the first recess width xa1 by twice the first film thickness t1.
On the other hand, the first mold convex width xd1 is (xb1 + 2 × t1), and the first mold convex width xd1 is larger than the first convex section width xb1 by twice the first film thickness t1.
The first mold recess depth dc1 which is the depth of the first mold recess 10d (the length in the Z-axis direction and the same as the height of the first mold protrusion 10p) is the same as the first recess depth d1. Value.

  As described above, the first film 12 has a dimension that is twice the width of the first film thickness t1 from the dimension of the first unevenness 11dp of the first base body 11 (first recess width xa1 and first protrusion width xb1). By changing and correcting, the first main surface 11a is formed with unevenness (first type unevenness 10dp) having dimensions different from the dimensions of the first unevenness 11dp (first type concave portion width xc1 and first type convex portion width xd1). .

  For example, when the first unevenness 11dp of the first base 11 is not the desired designed dimension, the first unevenness 11dp is formed by forming the first film 12 so as to cover the first unevenness 11dp of the first base 11. Thus, the unevenness of the first mold 10 (the first mold unevenness 10 dp) can be adjusted to a desired specification.

  Then, by changing the first film thickness t1 of the first film 12, the dimension of the unevenness of the first mold 10 (first mold unevenness 10dp) can be set to an arbitrary value.

  As described above, according to the template 110 according to the present embodiment, it is possible to realize a highly accurate dimension by correcting the dimension of the unevenness.

  For example, the dimension of the first unevenness 11dp of the first substrate 11 can be set in advance to a value different from a desired dimension in anticipation of the dimension correction by the first film 12. That is, the first recess width xa1 can be made larger than the desired width in advance by a size that is ½ of the first film thickness t1 of the first film 12. In addition, the first convex portion width xb1 can be made smaller than the width in advance as much as half the first film thickness t1 of the first film 12. Thereby, in the 1st type | mold 10 after forming the 1st film | membrane 12, the 1st type | mold recessed part width xc1 and the 1st type | mold convex part width xd1 can be made into a desired value.

  Thus, by forming the first film 12 and correcting the dimensions, even if the dimensions of the first substrate 11 are not a desired value, the dimensions can be corrected and used. 11 can improve the yield.

  As described above, in the template 110 according to the present embodiment, the material of the first base 11 is formed on the first unevenness 11dp of the first main surface 11a of the first base 11 on which a pattern thinner than a desired dimension is formed. The first film 12 of the atomic layer deposition film having almost the same elemental composition as the film thickness is formed so that the unevenness (first unevenness 10 dp) of a desired dimension is formed on the first main surface 11 a of the first substrate 11. The film is formed by controlling (first film thickness t1). For example, when the first substrate 11 is quartz, for example, an atomic layer deposition film of a silicon oxide film is used as the first film 12. Moreover, the position shift of the unevenness | corrugation by the thermal distortion in the 1st base | substrate 11 can be suppressed because the temperature of the 1st base | substrate 11 at the time of film-forming shall be 300 degrees C or less. Furthermore, it is more desirable that the first film 12 be formed at a temperature (for example, room temperature) at which the template 110 is transferred to the transfer layer on the substrate to be processed. When a silicon oxide film is used as the first film 12, for example, a method of forming a film by alternately introducing a source gas such as an aminosilane gas and an oxidant gas containing oxygen radicals into the film formation chamber, etc. Can be used. Thereby, the first film 12 can be formed at a relatively low temperature.

  Further, for example, a mold in which the first base 11 is used as a mother template and the first unevenness 11dp of the first base 11 is transferred, and the same specifications as the first base 11 are used to form the first unevenness 11dp. It is also possible to form a plurality of replica molds having the same dimensions. And the template which has the unevenness | corrugation of a various dimension is also producible by forming the film | membrane of various film thickness so that this unevenness | corrugation of several replication type | molds may be covered.

  That is, another template according to the present embodiment can further include a second mold having a size different from that of the first mold 10 in addition to the first mold 10.

FIG. 2 is a schematic cross-sectional view illustrating the configuration of another template according to the first embodiment.
That is, FIG. 2A is a schematic cross-sectional view illustrating the configuration of the second substrate that is a part of the template, and FIG. 2B illustrates the configuration of the second mold. 2A and 2B correspond to enlarged views of a part of AP in FIG.

  As shown in FIGS. 2A and 2B, another template 111 according to the present embodiment further includes a second mold 20 in addition to the first mold 10 (omitted in FIG. 2). .

The second mold 20 includes a second base 21 and a second film 22.
The second main surface 21a of the second base 21 is provided with second unevenness 21dp having the same dimensions as the first unevenness 11dp. The second base 21 is made of the same material as the first base 11.

  The second film 22 covers the second unevenness 21dp, is made of the same material as the second base 21, and has a film thickness (second film thickness t2) different from that of the first film 12.

  As shown in FIG. 2A, the shape and dimensions of the second unevenness 21 dp of the second base 21 are the same as the first unevenness 11 dp of the first base 11. That is, the second concave portion 21d and the second convex portion 21p of the second concave and convex portion 21dp have the same shape and the same dimensions as the first concave portion 11d and the first convex portion 11p. That is, the second recess width xa2 that is the width of the second recess 21d (the length along the X-axis direction) is the same as the first recess width xa1. The second convex portion width xb2 that is the width of the second convex portion 21p (the length along the X-axis direction) is the same as the first convex portion width xb1. The second recess depth d2 that is the depth of the second recess 21d (the length in the Z-axis direction and the same as the height of the second protrusion 21p) is the same as the first recess depth d1.

  Such a second substrate 21 can be manufactured using a mold manufactured based on the first substrate 11. Further, the first base body 11 and the second base body 21 can be manufactured from the same matrix.

  As described above, the first unevenness 21dp (second recess 21d and second protrusion 21p) of the first base 21 having the second unevenness 21dp having the same size as the first unevenness 11dp of the first base 11 is covered with the first. A second film 22 having a film thickness different from the film 12 (second film thickness t2) is provided.

  As shown in FIG. 2B, the second film 22 is formed with the second film thickness t2 on the bottom and side surfaces of the second recess 21d and on the top and side surfaces of the second protrusion 21p. As a result, the second mold 20 after the second film 22 is formed has a size different from the size of the second unevenness 21dp and a size different from the size of the first mold unevenness 10dp (second type Unevenness 20dp) is formed. The second mold unevenness 20dp has a shape reflecting the shape of the second unevenness 21dp based on the shape of the second unevenness 21dp. The second mold asperity 20dp includes a second mold recess 20d and a second mold protrusion 10p.

The width (length along the X-axis direction) of the second mold recess 20d is the second mold recess width xc2. The width (the length along the X-axis direction) of the second mold convex part 20p is the second mold convex part width xd2.
The second mold recess width xc2 is (xa2-2 × t2), that is, (xa1-2 × t2), and the second mold recess width xc2 is larger than the second recess width xa2 (that is, the first recess width xa1). The length is reduced by twice the second film thickness t2.
On the other hand, the second type convex portion width xd2 is (xb2 + 2 × t2), that is, (xb1 + 2 × t2), and the second type convex portion width xd2 is the second convex portion width xb2 (that is, the first convex portion width xb1). Than the second film thickness t2.
The second mold recess depth dc2 which is the depth of the second mold recess 20d (the length in the Z-axis direction and the same as the height of the second mold protrusion 20p) is the second recess depth d2 (ie, , The same value as the first mold recess depth dc1 and the same value as the first recess depth d1).

  As described above, the second film 22 has a size that is twice the width of the second film thickness t2 from the size of the second unevenness 21dp of the second substrate 21 (second recess width xa2 and second protrusion width xb2). The correction is made to change, and an unevenness (second type unevenness 20dp) having a dimension (second mold recess width xc2 and second mold protrusion width xd2) different from the dimension of the second unevenness 21dp is formed on the second main surface 21a. .

  As described above, the template 111 includes the first mold 10 and the second mold 20 having a size different from that of the first mold 10. That is, the template 111 has a plurality of mold sets having different dimensions.

  As described above, according to the template 111, a plurality of duplicate templates having different dimensions can be efficiently produced from the same mother template.

  As described above, the template 111 (a set of different types including the first mold 10 and the second mold 20) is used to form an imprint pattern on the substrate to be processed (wafer or the like) using the child template transferred from the mother template. A set of child templates having a plurality of dimensions applicable to the pattern forming method to be formed can be provided. In the production of a set of child templates having a plurality of dimensions, for example, a method of forming an atomic layer deposition film of the first film 12 and the second film 22 on the first base 11 and the second base 21 is adopted, Accordingly, a set of child templates having a plurality of dimensions can be efficiently manufactured from one mother template.

  The above-described set of child templates having a plurality of dimensions is, for example, a child template (first type) having a desired dimension at each location on the wafer when processing conversion differences are different on the wafer. By imprinting using 10 and the second mold 20), for example, a semiconductor device having a uniform dimension after processing of the wafer can be manufactured.

  Hereinafter, a pattern forming method using such a template will be described. Below, the case where the 1st type | mold 10 is used first as an example is demonstrated.

FIG. 3 is a schematic cross-sectional view in order of the processes, illustrating the pattern forming method using the template according to the first embodiment.
As shown in FIG. 3A, the transfer layer 51 is provided on the main surface 50 a of the substrate 50 to be processed.

  The substrate 50 to be processed is arbitrary, and the substrate 50 to be processed includes, for example, a silicon substrate, a silicon substrate in which various insulating films such as a silicon oxide film and a low dielectric constant film are provided on the main surface, and a main surface. A silicon substrate provided with an insulating film thereon and further provided with a conductive film, or various substrates provided with a mask material such as an organic film on the main surface can be used. The substrate to be processed 50 may be a semiconductor, a conductor, or an insulator. Further, as the substrate to be processed 50, a substrate provided with various device patterns during the device manufacturing process can be used.

  For the transfer layer 51, a photocurable resin or the like is used. The transfer layer 51 is liquid in a state before curing, which will be described later, and the transfer layer 51 is more easily deformed than the first mold 10. For the formation of the transfer layer 51, for example, a printing method including an ink jet method, a spin coating method, or the like can be used. When the spin coating method is used, throughput can be improved. On the other hand, when the ink jet method is used, a desired amount of the material of the transfer layer 51 can be applied to a desired region of the main surface 50a of the substrate 50 to be processed. Further, according to the ink jet method, the time from the application to the transfer described later can be made uniform within the main surface 50a of the substrate to be processed 50, and more stable transfer can be performed.

  On the first main surface 11a side of the first mold 10, a mold pattern 10pp (a pattern of the first mold unevenness 10dp) is provided. The first mold 10 and the substrate to be processed 50 are placed so that the mold pattern 10pp faces the transfer layer 51.

  Then, as shown in FIG. 3B, the distance between the first mold 10 and the transfer layer 51 is reduced, the first mold 10 and the transfer layer 51 are pressed against each other, and a part of the transfer layer 51 is The mold pattern 10pp enters the first mold recess 10d. That is, the transfer layer 51 is deformed along the shapes of the first mold concave portion 10d and the first mold convex portion 10p of the first mold pattern 10pp. At this time, the position of the first mold 10 in the plane of the transfer layer 51 is appropriately aligned.

At this time, the first mold convex portion 10p and the substrate to be processed 50 are not completely in contact with each other, and the transfer layer 51 exists between the first mold convex portion 10p and the substrate to be processed 50. In this state, the transfer layer 51 is irradiated with light 55L (for example, ultraviolet light that cures the transfer layer 51, for example, ultraviolet light including a wavelength such as i-line) to cure the transfer layer 51. When the transfer layer 51 is a thermosetting resin, heat is applied to the transfer layer 51.
Thereafter, the first mold 10 is separated from the transfer layer 51, and the surface of the transfer layer 51 is rinsed as necessary.

  As a result, as shown in FIG. 3C, the mold pattern 10 pp provided on the first mold 10 is pressed against the transfer layer 51 provided on the main surface 50 a of the substrate 50 to be processed. Transfer to the transfer layer 51 is possible.

  Thereafter, as shown in FIG. 3D, the concave portion of the transfer layer 51 is etched to expose a part of the main surface 50 a of the substrate to be processed 50. For example, an etching process is performed on the entire surface of the transfer layer 51, and both the convex portion of the transfer layer 51 and the concave portion of the transfer layer 51 are etched back until the concave portion of the transfer layer 51 is removed at the same time. For this etching process, for example, anisotropic etching mainly using oxygen plasma can be used. However, any method can be used for this etching treatment, and for example, etching that is close to isotropic may be performed.

  In this way, post-processing is performed in which the thickness of the transfer layer 51 after transfer is reduced to expose a part of the main surface 50a of the substrate 50 to be processed. Thereby, the mold pattern 10pp of the first mold 10 is transferred to the transfer layer 51 on the main surface 50a of the substrate 50 to be processed.

  A film to be processed (not shown) is formed on the main surface 50a of the substrate 50 to be processed, a transfer layer 51 is formed on the film to be processed, and a mold pattern 10pp of the first mold 10 is formed on the transfer layer 51. Then, the film to be processed may be patterned using the transfer layer 51 as a mask.

  By using the template 110 according to the present embodiment, the first mold 10 of the template 110 has a desired high-precision first mold asperity 10 dp. It can be formed on the transfer layer 51, and high-precision pattern formation can be realized.

  In this post-processing (etching process), the etching amount may not be uniform within the surface of the substrate 50 to be processed. At this time, in the transfer process (the process of FIG. 2B), by using a plurality of molds having different concavo-convex dimensions as the mold to be used, the in-plane variation in the characteristics of the post-processing can be corrected. That is, a plurality of molds having different concavo-convex dimensions are prepared, and a mold having dimensions that can compensate for the in-plane variation of the etching amount in the post-processing step is used in the plane of the transfer layer 51. Transfer using a different mold. Thereby, the in-plane variation of the post-processing characteristics can be corrected, and unevenness having a uniform dimension can be formed in the transfer layer 51 within the surface.

  For example, transfer is performed on a partial region of the transfer layer 51 using a mold that is not provided with the first film 12 and has the same dimensions as the first substrate 11, and further, on the first substrate 11. Using the first mold 10 provided with the first film 12, the transfer can be performed in another region. In addition, the transfer can be performed in another region using the second mold 20 in which the second film 22 having a thickness different from that of the first film 12 is formed.

  As described above, according to the template 111 according to the present embodiment, a plurality of molds (the first mold 10 and the second mold 20) having different dimensions are efficiently manufactured from the same mother template. The pattern forming method using a plurality of molds can be efficiently implemented in response to the variation in the in-plane characteristics of the substrate to be processed 50 in the process.

  In the template according to the present embodiment, the same material as that of the first base 11 is used for the first film 12 whose dimensions are to be corrected. For example, as described in Patent Document 1, in order to improve mold releasability, a film made of a material different from the base is formed on the unevenness of the base. In the comparative example having such a configuration, since the base and the film are different materials, the film is easily peeled off from the base. Since the substrate and the film are different materials, for example, there is a difference in the thermal expansion coefficient between the substrate and the film. For this reason, for example, when the temperature changes due to irradiation of light 55L during the transfer process, the film is easily peeled off from the substrate.

  Furthermore, when the substrate and the film are different materials, the optical characteristics such as transmittance and absorption with respect to the light 55L irradiated in the transfer process are greatly different between the substrate and the film. Thus, if the optical characteristics of the substrate and the film are different, for example, when the film is formed on the substrate and the dimensions are corrected, the optical characteristics of the mold change depending on whether the film is formed or not. The energy of the light 55L applied to the transfer layer 51 changes, and stable transfer is difficult. In addition, even when the transfer is performed on a part of the transfer layer 51 using the mold of the substrate only, and the transfer is performed on another area of the transfer layer 51 using a mold provided with a film on the substrate, the transfer layer 51 is also used. The amount of light 55L applied to the substrate fluctuates, making it difficult to stabilize the process. As a result, it becomes difficult to form unevenness with desired accuracy on the substrate 50 to be processed.

  On the other hand, in the template 110 (and template 111) according to the present embodiment, since the same material as that of the first base 11 is used for the first film 12, the film is difficult to peel off from the base. Since the thermal expansion coefficient is the same, peeling of the film from the substrate is suppressed even when the temperature changes. And since the optical characteristics of the substrate and the film are the same, the optical characteristics of the mold do not change depending on the presence or absence of the film, whereby the amount of light 55L irradiated to the transfer layer 51 is substantially constant, A process is stabilized and desired unevenness | corrugation can be formed in the to-be-processed substrate 50 with high precision.

  Thus, the same material as the first base 11 is used for the first film 12. Here, the “same material” is sufficient if the element contained in the material of the first film 12 and the element contained in the material of the first substrate 11 are substantially equal. For example, the first film 12 and the first film The types and amounts of impurities contained in each of the base 11 may be different from each other. Further, the composition ratio of the plurality of elements contained in the material of the first film 12 and the composition ratio of the plurality of elements contained in the material of the first base 11 need only be substantially equal, and the composition ratio is within an error range. May be different from each other. That is, the first film 12 and the first substrate 11 have substantially the same elemental composition. Further, it is desirable that the phase of the material of the first film 12 and the material of the first base 11 are substantially the same. Thereby, the thermal expansion coefficient and optical characteristics of the first film 12 and the first substrate 11 can be made substantially the same.

  For the first substrate 11 and the second substrate 21, any material can be used in addition to the quartz described above. For example, the first substrate 11 and the second substrate 21 may be any selected from the group consisting of silicon oxide, carbon, silicon nitride, aluminum oxide, aluminum nitride, titanium oxide, and titanium nitride. Also in this case, the same material as that used for the first base 11 and the second base 21 is used for the first film 12 and the second film 22, that is, for the first film 12 and the second film 22. Any one selected from the group consisting of silicon oxide, carbon, silicon nitride, aluminum oxide, aluminum nitride, titanium oxide, and titanium nitride can be used.

(Second Embodiment)
The second embodiment of the present invention is a method for manufacturing a template. That is, this is a method for manufacturing the template 110 having the first mold 10 for transferring the pattern to the transfer layer 51 by being pressed against the transfer layer 51 provided on the substrate 50 to be processed. This manufacturing method can be applied to a template manufacturing method that corrects the size of the unevenness to realize a highly accurate size.

FIG. 4 is a flowchart illustrating the template manufacturing method according to the second embodiment.
As shown in FIG. 4, in the template manufacturing method according to the present embodiment, the first unevenness 11 dp of the first main surface 11 a of the first base 11 that is a part of the first mold 10 is covered. A first film 12 made of the same material as that of one substrate 11 is formed to form a first mold 10 (step S110).

  As a result, the dimensions are corrected by changing the dimensions by a width twice as large as the first film thickness t1 from the dimensions of the first irregularities 11dp of the first substrate 11 (first concave width xa1 and first convex width xb1), Concavities and convexities (first mold concavity and convexity 10dp) having dimensions different from the dimensions of the first concavity and convexity 11dp (first mold concave portion width xc1 and first mold convex portion width xd1) are formed on the first main surface 11a. Then, by changing the first film thickness t1 of the first film 12, the dimension of the unevenness of the first mold 10 (first mold unevenness 10dp) can be set to an arbitrary value.

  Thus, according to the template manufacturing method according to the present embodiment, it is possible to realize a highly accurate dimension by correcting the dimension of the unevenness.

FIG. 5 is a flowchart illustrating another method for manufacturing a template according to the second embodiment.
As shown in FIG. 5, in the template manufacturing method according to the present embodiment, first, the first uneven pattern of the first unevenness 11dp of the first base 11 is designed (step S101), and the first uneven pattern is drawn. (Step S102). In this drawing, for example, drawing using an electron beam is performed.

  And based on the drawn 1st uneven | corrugated pattern, the 1st unevenness | corrugation 11dp is processed into the surface of the base | substrate used as the 1st base | substrate 11, and the 1st base | substrate 11 is formed (step S103).

  And the dimension of 11 dp of formed 1st unevenness | corrugations is measured (step S104).

  Then, based on the measured size of the first unevenness 11dp, the value of the first film thickness t1 of the first film 12 is determined, and the first film 12 is formed so as to cover the first unevenness 11dp of the first substrate 11. (Step S110).

  Then, the dimension of the first mold unevenness 10dp formed by the first film 12 is measured (step S111). For the measurement of the dimensions in step S104 and step S111, any technique that can measure the dimensions of the fine structure such as an AFM (atomic force microscope) or SEM (scanning electron microscope) can be used.

  Then, a determination is made regarding the measured dimension of the first mold unevenness 10dp (step S112). If the dimension of the first mold unevenness 10dp is a desired dimension, the process is terminated. If the dimension of the first mold unevenness 10dp is not the desired dimension, the process returns to step S110 to further form the first film 12. At this time, the first mold 10 formed by forming the first film 12 for the first time is regarded as the first substrate 11. Then, steps S110 to S112 are repeated until the dimension of the first mold unevenness 10dp becomes a desired dimension.

  In this way, according to the template manufacturing method according to the present embodiment, the dimension of the first mold unevenness 10dp of the first mold 10 is adjusted to a desired dimension, and a highly accurate template is obtained.

  The template manufacturing method described above is a template manufacturing method in which the dimensions are adjusted to a desired value, but a plurality of molds (first mold 10 and second mold 20) having different dimensions from the same mother template can be efficiently used. It can also be applied to the method of manufacturing.

  That is, the following template manufacturing method is a method of manufacturing the template 111 having a set of the first mold 10 and the second mold 20 having a dimension different from that of the first mold 10. That is, the template 111 is a template that further includes the second mold 20 for transferring the pattern to the transfer layer 51 by being pressed against the transfer layer 51 provided on the substrate 50 to be processed.

FIG. 6 is a flowchart illustrating another method for manufacturing a template according to the second embodiment.
As shown in FIG. 6, in the template manufacturing method according to the present embodiment, the following step S <b> 120 is further performed in addition to step S <b> 110 already described.

That is, the second unevenness 21dp made of the same material as the first base 11 and provided on the second main surface 21a of the second base 21 that becomes a part of the second mold 20 and has the same dimensions as the first unevenness 11dp. The second mold 20 is further formed by forming a second film 22 made of the same material as the second base 21 and having a film thickness different from the first film 12 (second film thickness t2) so as to cover Step S120).
Note that the order of step S110 and step S120 is arbitrary.

  As a result, the second unevenness is changed from the dimension of the second unevenness 21dp of the second base 21 (second recess width xa2 and second protrusion width xb2) by a width twice the second film thickness t2. Unlike the dimension of 21 dp, the irregularities (second mold irregularities 20 dp) of dimensions (second mold concave width xc2 and second mold convex width xd2) that are also different from the dimensions of the first mold irregularities 10 dp are the second mold 21 irregularities. Formed on main surface 21a.

  At this time, the first substrate 11 and the second substrate 21 can be formed by duplicating from the same mother template. Thereby, the 1st base 11 and the 2nd base 21 can have the unevenness of the same size mutually. Then, the first film 12 and the second film 22 having different thicknesses are respectively formed on the first base 11 and the second base 21 having unevenness of the same size, so that the first having the unevenness of different sizes is formed. The mold 10 and the second mold 20 can be manufactured.

  Thus, according to this manufacturing method, it is also possible to efficiently produce a plurality of molds (first mold 10 and second mold 20) having different dimensions from the same mother template.

Specifically, for example, the following method can be implemented.
FIG. 7 is a flowchart illustrating another template manufacturing method according to the second embodiment.
As shown in FIG. 7, first, a base concavo-convex pattern to be a base is designed (step S201), and a base concavo-convex pattern is drawn (step S202).

  Then, based on the drawn base uneven pattern, the first unevenness 11dp and the second unevenness 21dp are processed on the surface of the base to be the first base 11 and the second base 21, and the first base 11 and the second base 21 are processed. Is formed (step S203). The first unevenness 11dp and the second unevenness 21dp formed from the same base uneven pattern have the same size and shape.

  And the 1st film | membrane 12 is formed so that the 1st unevenness | corrugation 11dp of the 1st base | substrate 11 may be covered (step S110). At this time, the thickness of the first film 12 is the first film thickness t1.

  And the 1st film | membrane 12 is formed so that the 2nd unevenness | corrugation 21dp of the 2nd base | substrate 21 may be covered (step S120). The thickness of the second film 22 is a second film thickness t2 different from the first film thickness t1. Note that the order of step S110 and step S120 is arbitrary.

  Thereby, the several type | mold (1st type | mold 10 and 2nd type | mold 20) which has a different dimension from the same mother template can be produced efficiently.

FIG. 8 is a flowchart illustrating another method for manufacturing a template according to the second embodiment.
As shown in FIG. 8, in the present manufacturing method, after the above steps S201 to S203, the dimension of the first unevenness 11dp of the first base 11 is measured (step S204a).

  Then, based on the measured size of the first unevenness 11dp, the value of the first film thickness t1 of the first film 12 is determined, and the first film 12 is formed so as to cover the first unevenness 11dp of the first substrate 11. (Step S110).

  Then, the dimension of the first mold unevenness 10dp formed by the first film 12 is measured (step S111).

  Then, determination is made regarding the measured size of the first mold unevenness 10dp (step S112), and steps S110 to S112 are repeated until the dimension of the first mold unevenness 10dp becomes a desired dimension.

  Furthermore, the dimension of the 2nd unevenness | corrugation 21dp of the 2nd base | substrate 21 is measured (step S204b).

  Then, based on the measured size of the second unevenness 21dp, the value of the second film thickness t2 of the second film 22 is determined, and the second film 22 is formed so as to cover the second unevenness 21dp of the second substrate 21. (Step S120).

  Then, the dimension of the second mold asperity 20dp formed by the second film 22 is measured (step S121).

  Then, a determination is made regarding the measured size of the second mold unevenness 20dp (step S122), and steps S120 to S122 are repeated until the size of the second mold unevenness 20dp becomes a desired size.

  Note that the order of steps S204a, S110, S111, and S112 and steps S204b, S120, S121, and S122 is arbitrary. Steps S111 and S112 and steps S121 and S122 may be performed as necessary and may be omitted.

  The dimensions of the first unevenness 11dp and the second unevenness 21dp thus formed are measured, and the dimensions of the first mold unevenness 10dp and the second mold unevenness 20dp formed by the first film 12 and the second film 22 are measured. Are measured, and the first film 12 and the second film 22 are formed based on the measurement results, so that a plurality of molds (first mold 10 and second mold 20) having different dimensions from the same mother template are formed. Can be more efficiently produced with high accuracy.

(Third embodiment)
The third embodiment of the present invention is a pattern forming method using, for example, the template 111 according to the embodiment of the present invention.

  FIG. 9 is a flowchart illustrating the pattern forming method according to the third embodiment. As shown in FIG. 9, in the pattern forming method according to the embodiment of the present invention, the mold pattern provided on the template 111 having the first mold 10 and the second mold 20 is used as the main surface 50 a of the substrate 50 to be processed. There is a transfer step (step S310) in which the mold pattern is transferred to the transfer layer 51 by being pressed against the transfer layer 51 provided thereon.

  The first mold 10 includes a first base body 11 having first unevenness 11dp provided on the first main surface 11a, and a first film 12 that covers the first unevenness 11dp and is made of the same material as the first base body 11. .

  The second mold 20 is provided with a second unevenness 21dp having the same dimensions as the first unevenness 11dp on the second main surface 21a, the second base 21 made of the same material as the first base 11, and the second unevenness 21dp. And a second film 22 made of the same material as the second base 21 and having a film thickness different from that of the first film 12. That is, the dimensions of the second mold recesses 20dp of the second mold 20 (second mold recess width xc2 and second mold protrusion width xd2) are the same as the dimensions of the first mold recesses 10dp of the first mold 10 (first mold recess width). xc1 and the first mold convex width xd1).

  Then, in the transfer in the first area in the main surface 50a of the substrate to be processed, the transfer is performed using the first mold 10, and the second area in the second area different from the first area in the main surface 50a is the second. Transfer is performed using the mold 20. That is, the transfer is performed using the molds (first mold 10 and second mold 20) having different dimensions within the surface of the transfer layer 51.

  In this transfer step, for example, the processing described with reference to FIGS. 3A and 3B is performed, and the unevenness of the template 111 (the first mold 10 and the second mold 20) is transferred to the transfer layer 51.

  Accordingly, when different characteristics are generated in the surface of the transfer layer 51 in processes other than the above-described transfer process, the dimensions of the first mold 10 and the second mold 20 are appropriately set so as to correct the different characteristics. As a result, for example, a uniform pattern can be formed in the surface of the transfer layer 51.

  For example, as shown in FIG. 9, the pattern forming method according to the present embodiment reduces the film thickness of the transfer layer 51 after step S <b> 310 and exposes a part of the main surface 50 a of the substrate 50 to be processed. A processing process (step S320) can be further provided. That is, the etching process described with reference to FIGS. 3C and 3C can be performed.

  For example, in this post-processing step, the etching amount may not be uniform within the surface of the substrate to be processed 50. At this time, by using a plurality of dies having different concavo-convex dimensions as molds used in the transfer process, in-plane fluctuations in the characteristics of the post-processing process are corrected, and concavo-convex parts having uniform dimensions are formed on the substrate 50 to be processed. can do.

FIG. 10 is a schematic plan view illustrating the pattern forming method according to the third embodiment.
As shown in FIG. 10, the transfer layer 51 provided on the main surface 50 a of the substrate 50 to be processed has a plurality of regions 58.

  In this specific example, each of the plurality of regions 58 is transferred using one of four types of molds. In this specific example, the etching amount in the post-processing step varies concentrically within the main surface 50 a of the substrate 50 to be processed. In this case, molds having different dimensions are used along radial lines extending outward from the center of the main surface 50a.

  For example, in the central portion 10r (for example, the first region) of the main surface 50a, the transfer is performed using, for example, the first mold 10 having the first mold recess width xc1. In the outer portion 20r (for example, the second region) adjacent to the central portion 10r, the transfer is performed using, for example, the second mold 20 having the second mold recess width xc2. In the further outer portion 30r adjacent to the portion 20r, for example, transfer is performed using a third mold (not shown) having a third mold recess width xc3. In the further outer portion 40r adjacent to the portion 30r, for example, transfer is performed using a fourth mold (not shown) having a fourth mold recess width xc4.

  In the third mold, the first film 12 and the second film 22 are made of the same material as the third base on the unevenness of the third base made of the same material as the first base 11 with the same dimensions as the first base 11. A third film having a film thickness different from the film thickness is provided. Thereby, the dimension of the unevenness of the third mold is different from the dimension of the unevenness of the first mold 10 and the second mold 20.

  In the fourth mold, the first film 12 and the second film 22 are made of the same material as the fourth base on the unevenness of the fourth base made of the same material as the first base 11 with the same dimensions as the first base 11. And the 4th film | membrane which has a film thickness different from the film thickness of a 3rd film | membrane is provided. Thereby, the dimension of the unevenness of the fourth mold is different from the dimension of the unevenness of the first mold 10, the second mold 20, and the third mold.

  As described above, by performing transfer using a set of a plurality of molds having different dimensions formed from the same mother template within the surface of the substrate to be processed 50, the transfer process other than the transfer process such as the post-process described above is performed. In-plane variation in characteristics can be corrected, and unevenness with uniform dimensions can be formed on the substrate 50 to be processed.

In the pattern forming method according to the present embodiment, for example, the following processes are performed.
FIG. 11 is a flowchart illustrating another pattern forming method according to the third embodiment.
As shown in FIG. 11, the dimension of the mold pattern used in the transfer process is set (step S301). In this setting, dimensions that correct the in-plane distribution of the characteristics of the post-processing process other than the transfer process, for example, are set. That is, the in-plane distribution of the dimensions of the mold pattern is set. As a result, data relating to the map of the type to be used is created at each position within the surface of the substrate to be processed 50.
Thereafter, a transfer process (step S310) and a post-processing process (step S320) are performed.

  In the transfer step, the liquid photocurable resin material that becomes the transfer layer 51 is applied to a predetermined region (for example, a region where one transfer is performed) of the main surface 50a of the substrate to be processed 50 by, for example, an inkjet method. , Applied in a predetermined amount. For example, in a transfer apparatus that performs transfer, the amount of the resin material that becomes the transfer layer 51 is calculated in advance from the pattern information of the template, and the resin material is applied based on the calculation result.

  Then, a mold having the dimensions set in step S301 is selected. Using this mold, the mold and the transfer layer 51 are brought into contact with each other, for example, the resin material is cured by light irradiation.

The application of the resin material, the contact using different molds, and the curing are repeatedly performed on the main surface 50 a of the substrate 50 to be processed, and the unevenness of the mold is transferred to the transfer layer 51.
Thereafter, an etching process in a post-processing step is performed, and a pattern reflecting unevenness of different types is formed on the main surface 50a of the substrate 50 to be processed. In the etching process, for example, an ashing process using oxygen plasma and / or a wet process using a mixed solution of sulfuric acid and hydrogen peroxide solution or various resist stripping solutions can be used.

  In the present specification, “vertical” and “parallel” include not only strictly vertical and strictly parallel, but also include, for example, variations in the manufacturing process, and may be substantially vertical and substantially parallel. is good.

The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configuration of each element, such as a mold constituting a template, a substrate and a film, a mold used in a pattern forming method, a substrate to be processed, and a transfer layer, is appropriately selected by those skilled in the art from a known range. Thus, the present invention is included in the scope of the present invention as long as the same effects can be obtained and similar effects can be obtained.
Moreover, what combined any two or more elements of each specific example in the technically possible range is also included in the scope of the present invention as long as the gist of the present invention is included.

  In addition, all templates, template manufacturing methods, and pattern forming methods that can be implemented by those skilled in the art based on the templates, template manufacturing methods, and pattern forming methods described above as embodiments of the present invention. As long as the gist of the present invention is included, it belongs to the scope of the present invention.

  In addition, in the category of the idea of the present invention, those skilled in the art can conceive of various changes and modifications, and it is understood that these changes and modifications also belong to the scope of the present invention. . For example, those in which the person skilled in the art appropriately added, deleted, or changed the design of the above-described embodiments, or those in which the process was added, omitted, or changed the conditions are also included in the gist of the present invention. As long as it is provided, it is included in the scope of the present invention.

  DESCRIPTION OF SYMBOLS 10 ... 1st type | mold, 10d ... 1st type | mold recessed part, 10dp ... 1st type | mold unevenness | corrugation, 10p ... 1st type | mold convex part, 10pp ... type | mold pattern, 10r ... center part, 11 ... 1st base | substrate, 11a ... 1st main surface 11d: first recess, 11dp: first recess, 11p: first recess, 12: first film, 20: second mold, 20d: second mold recess, 20dp: second recess, 20p: second Mold convex part, 20r ... part, 21 ... second substrate, 21a ... second main surface, 21d ... second concave part, 21dp ... second uneven part, 21p ... second convex part, 22 ... second film, 30r, 40r ... Part: 50 ... Substrate to be processed, 50a ... Main surface, 51 ... Transfer layer, 55L ... Light, 58 ... Region, 110, 111 ... Template, d1, d2 ... First and second recess depths, dc1, dc2 ... First 1 and second mold recess depths, t1, t2, ... 1 and 2nd film thickness, xa1, xa2 ... 1st and 2nd recessed part width, xb1, xb2 ... 1st and 2nd protruding part width, xc1, xc2, xc3, xc4 ... 1st, 2nd, 3rd and 3rd 4 type convex part width, xd1, xd2 ... 1st and 2nd type convex part width

Claims (8)

A template for transferring a pattern to the transfer layer by being pressed against a transfer layer provided on a substrate to be processed,
A first base provided with first irregularities on the first main surface;
A first film covering the first irregularities and made of the same material as the first base;
A template comprising: a first mold having:   The template according to claim 1, wherein the first film is a film formed by an atomic layer deposition method. A second mold,
The second type is
A second base made of the same material as the first base, wherein the second main surface is provided with second concave and convex having the same dimensions as the first concave and convex,
A second film that covers the second unevenness and is made of the same material as the second base, and has a film thickness different from the first film;
The template according to claim 1, comprising: A method of manufacturing a template having a first mold for transferring a pattern to a transfer layer by being pressed against a transfer layer provided on a substrate to be processed,
Forming the first mold by forming a first film made of the same material as the first base so as to cover the first unevenness of the first main surface of the first base serving as a part of the first mold; A method for producing a template characterized by the above. The template further has a second mold for transferring a pattern to the transfer layer by being pressed against the transfer layer provided on the substrate to be processed;
The second base is formed on the second main surface of the second base made of the same material as the first base and is part of the second mold, and covers the second concave and convex having the same dimension as the first concave and convex. 5. The template manufacturing method according to claim 4, wherein the second mold is further formed by forming a second film made of the same material as the second substrate and having a thickness different from that of the first film.   6. The template manufacturing method according to claim 5, wherein the first film and the second film are formed by an atomic layer deposition method.   The template manufacturing method according to claim 5 or 6, wherein the temperature of the first substrate and the second substrate when forming the first film and the second film is 300 ° C or less. A transfer step of pressing the mold pattern provided on the template having the first mold and the second mold against the transfer layer provided on the main surface of the substrate to be processed and transferring the mold pattern to the transfer layer;
The first type is
A first base provided with first irregularities on the first main surface;
A first film covering the first irregularities and made of the same material as the first base;
Have
The second type is
A second base made of the same material as the first base, wherein the second main surface is provided with second concave and convex having the same dimensions as the first concave and convex,
A second film that covers the second unevenness and is made of the same material as the second base, and has a film thickness different from the first film;
Have
In the first region in the main surface of the substrate to be processed, the transfer is performed using the first mold, and in the second region different from the first region in the main surface, the second mold is performed. The pattern forming method, wherein the transfer is performed using

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