JP2011181292A - Antenna for plasma treatment device, and plasma treatment device using the same - Google Patents

Abstract

Provided is a high frequency antenna capable of suppressing high frequency induction electric field shielding and strength attenuation even when a thin film material adheres to the surface.
A high frequency antenna includes a linear antenna conductor, a dielectric protective tube provided around the antenna conductor, and a shield provided around the dielectric protective tube. A deposit shield 15 that covers at least one dielectric protective tube 14 on an arbitrary line in the longitudinal direction of the antenna conductor 13 and has at least one opening 153 is provided. The thin film material adheres to the surfaces of the protective tube and the deposit shield, but breaks at at least one point in the longitudinal direction of the antenna conductor. Therefore, it is possible to prevent the high-frequency induction electric field from being shielded when the thin film material is conductive, and to suppress the attenuation of the strength of the high-frequency induction electric field when other than the conductive material. .
[Selection] Figure 1

Description

  The present invention relates to a high-frequency antenna used in a plasma processing apparatus such as a CVD apparatus, a sputtering apparatus, or an etching apparatus using plasma. The present invention also provides a plasma processing apparatus using the high-frequency antenna.

  In recent years, an internal antenna type plasma processing apparatus in which a high frequency antenna is disposed in a vacuum vessel has been developed and put into practical use. In this plasma processing apparatus, a gas for generating plasma is introduced into a vacuum vessel, a high-frequency current is passed through a high-frequency antenna to generate a high-frequency induction electric field, thereby accelerating electrons and accelerating the gas molecules. Plasma is generated by ionization. A thin film can be formed or etched by supplying a plasma obtained by sputtering a raw material target or by decomposing a raw material gas to the surface of the substrate.

  Patent Document 1 discloses a plasma processing apparatus in which a plurality of high-frequency antennas made of U-shaped conductors are arranged in a vacuum vessel. This apparatus uses a plurality of high-frequency antennas to improve the uniformity of the plasma density in the vacuum vessel. In addition, the U-shaped high-frequency antenna corresponds to an inductively coupled antenna having less than one turn, and has a lower inductance than an inductively coupled antenna having one or more turns, so that the high-frequency voltage generated at both ends of the high-frequency antenna is reduced. High frequency fluctuation of the plasma potential accompanying electrostatic coupling to the generated plasma is suppressed. For this reason, excessive electron loss accompanying the plasma potential fluctuation to the ground potential is reduced, and the plasma potential is reduced. This enables a thin film formation process with low ion damage on the substrate.

  When the high-frequency antenna is in direct contact with the plasma, excessive electrons flow from the plasma into the antenna due to the high-frequency voltage generated in the antenna, and the plasma potential becomes higher than the antenna potential. For this reason, the material used for the antenna is sputtered by plasma, which may cause the material of the high-frequency antenna to be mixed into the thin film as an impurity. For this reason, in the apparatus described in Patent Document 1, the high-frequency antenna is covered with a protective tube made of an insulator (dielectric) so as not to directly contact the plasma.

JP 2001-035697 ([0050], [0052], [0053], FIG. 1, FIG. 11)

  When the plasma processing apparatus of Patent Document 1 is continuously used for thin film manufacturing and etching processes, the material of the thin film or the dissociated species of gas molecules used in the etching process or the biproduct gradually adhere to the surface of the protective tube. Eventually, the entire surface is eventually covered with a layer of sediment. In this case, when the deposit is conductive, when a high-frequency current is passed through the high-frequency antenna, a reverse current is generated in the deposit layer, thereby shielding the high-frequency induction electric field. End up. Even when the deposit has no electrical conductivity, the strength of the high frequency induction electric field is attenuated when passing through the deposit layer.

  The problem to be solved by the present invention is to provide a high-frequency antenna capable of suppressing the shielding of the high-frequency induction electric field and the attenuation of the strength even when deposits adhere to the surface of the antenna protection tube. In addition, a plasma processing apparatus using the high-frequency antenna is provided.

A high-frequency antenna according to the present invention, which has been made to solve the above problems, is disposed in a vacuum vessel, forms a high-frequency induction electric field in the vacuum vessel by flowing a high-frequency current, and is introduced into the vacuum vessel. A high-frequency antenna for converting plasma generated gas into plasma,
a) a linear antenna conductor;
b) a dielectric protective tube provided around the antenna conductor;
c) a shield provided around the protective tube, the deposit shield covering at least one portion of the protective tube and having at least one opening on an arbitrary line in the longitudinal direction of the antenna conductor;
It is characterized by providing.

  In the high-frequency antenna according to the present invention, deposits do not continuously adhere in the longitudinal direction on the surface of the protective tube during the manufacturing or etching process of the thin film, and also in the longitudinal direction on the surface of the shield. Therefore, when the deposit is conductive, when a high-frequency current is passed through the antenna conductor, it is prevented that a current in the opposite direction flows through the deposit layer. The induced electric field is not shielded. Further, in the case of deposits that do not have electrical conductivity, a high frequency induction electric field is not shielded by a continuous deposit layer, so that a decrease in plasma generation capability can be suppressed.

  As such a deposit shield, for example, a shield that is partially broken in the longitudinal direction of the protective tube can be used. In this case, the portion where the shield is interrupted corresponds to the opening. In addition, it is possible to use a member in which a belt-like member is provided in a spiral shape along the longitudinal direction of the protective tube with a gap between the belts. In this case, the space between the bands corresponds to the opening. Alternatively, it is also possible to use a tubular member in which a large number of holes having a long shape in the circumferential direction of the tube are arranged in the longitudinal direction with the circumferential position shifted.

  It is desirable to provide a partition between the deposit shield and the protective tube that protrudes from the protective tube and extends around the periphery of the protective tube or spirally along the longitudinal direction of the protective tube. The partition portion can more reliably prevent the thin film material from being continuously deposited in the longitudinal direction on the surface of the protective tube.

In the first aspect of the plasma processing apparatus according to the present invention,
a) a vacuum vessel;
b) target holding means provided in the vacuum vessel;
c) substrate holding means provided facing the target holding means;
d) plasma generation gas introduction means for introducing a plasma generation gas into the vacuum vessel;
e) an electric field generating means for generating a direct current electric field or a high frequency electric field for sputtering in a region including the surface of the target held by the target holding means;
f) The high frequency antenna according to any one of claims 1 to 8, wherein a high frequency induction electric field is formed in a region including a surface of a target disposed in the vacuum vessel and held by the target holding means;
It is characterized by providing.

In addition to the configuration of the conventional sputtering apparatus, the plasma processing apparatus of the first aspect is provided with the high-frequency antenna according to the present invention in order to form a high-frequency induction electric field near the surface of the target.
In a conventional sputtering apparatus, plasma is generated by ionizing molecules of a plasma generation gas by an electric field generation unit, and the target is sputtered by colliding ions generated thereby with the target. A thin film is formed by depositing. On the other hand, in the plasma processing apparatus of the first aspect, the plasma density near the surface of the target can be further increased by the high-frequency induction electric field formed by the high-frequency antenna disposed in the vacuum vessel. Sputtering can be performed at high speed. However, in this apparatus, since the high-frequency antenna is disposed in the vacuum vessel, the thin film material formed by sputtering the target adheres to the surface of the high-frequency antenna. Therefore, in the plasma processing apparatus of the first aspect, the high frequency antenna according to the present invention is used to prevent the strength of the high frequency induction electric field from being weakened.

  In the plasma processing apparatus (sputtering apparatus) of the first aspect, it is desirable to provide magnetic field generation means for generating a magnetic field having a component orthogonal to the direct current electric field or the high frequency electric field in a region including the surface of the target. This is provided with a high-frequency antenna according to the present invention in addition to the configuration of a conventional magnetron sputtering apparatus.

In the second aspect of the plasma processing apparatus according to the present invention,
a) a vacuum vessel;
b) substrate holding means provided in the vacuum vessel;
c) a plurality of high-frequency antennas according to the present invention provided in the vacuum vessel;
d) plasma generation gas introduction means for introducing a plasma generation gas into the vacuum vessel;
e) raw material gas introduction means for introducing a gas as a raw material for the thin film into the vacuum vessel;
It is characterized by providing. In this plasma processing apparatus, the high-frequency antenna according to the present invention is used as the high-frequency antenna in the plasma processing apparatus described in Patent Document 1.

Moreover, the thing of the 3rd aspect of the plasma processing apparatus which concerns on this invention is
a) a vacuum vessel;
b) substrate holding means provided in the vacuum vessel;
c) a plurality of high-frequency antennas according to the present invention provided in the vacuum vessel;
d) plasma generation gas introduction means for introducing a plasma generation gas into the vacuum vessel;
e) an etching process gas introduction means for introducing a gas used in the etching process into the vacuum vessel;
It is characterized by providing.

  According to the high-frequency antenna according to the present invention, the deposit layer formed on the surface of the protective tube and the deposit shield when the material gas for etching or the material gas used for etching adheres is on an arbitrary line in the longitudinal direction of the antenna conductor. With at least one break. Therefore, it is possible to prevent the high-frequency induction electric field from being shielded when the deposit is conductive, and to suppress the attenuation of the strength of the high-frequency induction electric field when the deposit is other than conductivity. .

1A is a longitudinal sectional view showing a first embodiment of a high-frequency antenna according to the present invention, and FIG. The figure for demonstrating the effect | action of the deposit shield in the high frequency antenna of 1st Example. The longitudinal cross-sectional view which shows the sputtering device which is one Example of the plasma processing apparatus with which the high frequency antenna which concerns on this invention is used. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a longitudinal sectional view (a) and a plan view (b) showing a plasma CVD apparatus or a plasma etching apparatus which is an embodiment of a plasma processing apparatus using a high-frequency antenna according to the present invention. The longitudinal cross-sectional view which shows the high frequency antenna of 2nd Example. The figure for demonstrating the effect | action of the deposit shield in the high frequency antenna of 2nd Example. The longitudinal cross-sectional view which shows the high frequency antenna of 3rd Example. The figure for demonstrating the effect | action of the deposit shield in the high frequency antenna of 3rd Example. The front view which shows a part of fin and dielectric pipe in the modification of 3rd Example. Sectional drawing (a) in a surface perpendicular | vertical to a linear conductor and development (b), (c) which show the high frequency antenna of 4th Example. Sectional drawing of the longitudinal direction for demonstrating the effect | action of the deposit shield in the high frequency antenna of 4th Example.

  1 to 11, an embodiment of a high-frequency antenna for a plasma processing apparatus (hereinafter referred to as “high-frequency antenna”) according to the present invention and a plasma processing apparatus using the high-frequency antenna will be described.

  A first embodiment of a high-frequency antenna according to the present invention will be described with reference to FIGS. The high-frequency antenna 10 includes an antenna conductor 13 obtained by bending a linear conductor into a U shape, a dielectric pipe 14 having a circular cross section, which is bent into a U shape so as to cover the antenna conductor 13, and a dielectric pipe. 14 and a deposit shield 15 provided on the outer surface. Details of the deposit shield 15 will be described later. FIG. 1A is a cross-sectional view in a cross section parallel to the antenna conductor 13. The high-frequency antenna 10 is attached to the wall surface of the vacuum vessel 11 included in the plasma processing apparatus via the feedthrough 12. A high frequency power supply 16 is connected to the antenna conductor 13 via an impedance matching unit 17. The U-shaped antenna conductor 13 corresponds to an inductively coupled antenna having less than one turn, and has a lower inductance than an inductively coupled antenna having one or more turns, so that the high frequency voltage generated at both ends of the high frequency antenna is reduced. Thus, high-frequency fluctuation of the plasma potential accompanying electrostatic coupling to the generated plasma is suppressed. For this reason, excessive electron loss accompanying the plasma potential fluctuation to the ground potential is reduced, and the plasma potential is reduced. This enables a thin film formation process with low ion damage on the substrate.

  The deposit shield 15 includes a leg portion (separating portion) 151 extending outward from the outer surface of the dielectric pipe 14 and a flange portion 152 extending from the upper end of the leg portion 151 to both sides in the longitudinal direction of the dielectric pipe 14. Have Therefore, in the longitudinal cross-sectional view of FIG. 1A, the leg portion 151 and the flange portion 152 have a T-shape when combined. Both the leg portion 151 and the flange portion 152 are formed so as to go around the periphery of the dielectric pipe 14. A large number of the leg portions 151 and the flange portions 152 are arranged in the longitudinal direction of the dielectric pipe 14 so that the gap portions 152 are spaced apart from each other. That is, the thing constituting the deposit shield 15 is interrupted between the buttock. This interrupted portion is called an opening 153. The material of the deposit shield 15 may be a conductor or a dielectric.

  The high-frequency antenna 10 of this embodiment is used in the plasma processing apparatus (sputtering apparatus, plasma CVD apparatus, plasma etching apparatus) shown in FIGS. Although details of these plasma processing apparatuses will be described later, each of them is an apparatus for producing a thin film on a substrate, and after a plasma is formed by a high frequency induction electric field generated by the high frequency antenna 10, a target made of a thin film raw material is used. Is sputtered with ions in the plasma, or the raw material gas of the thin film is decomposed. At that time, since the raw material of the thin film and the etching process gas adhere to the surface of the high-frequency antenna 10, the problem is whether the deposit adversely affects the characteristics of the high-frequency antenna 10. In particular, a time-varying magnetic field is generated around the antenna conductor 13 by passing a high-frequency current through the antenna conductor 13, and therefore, if a conductive deposit adheres in the longitudinal direction of the linear conductor, the magnetic field is canceled out. As a result, a current flows through the deposit, and as a result, the high-frequency induction electric field may be shielded.

  In the present embodiment, as will be described below, the deposit hardly affects the characteristics of the high-frequency antenna 10 due to the presence of the deposit shield 15. That is, as shown in FIG. 2, a part of the deposition material flying toward the high-frequency antenna 10 (arrow in FIG. 2) is deposited on the outside of the collar portion 152 (outside deposit M <b> 1), and the others are It deposits on the outer surface of the dielectric pipe 14 through the opening 153 (inner deposit M2). Since the opening 153 exists between the adjacent flanges 152, the outer deposits M1 attached to the flanges 152 are not connected to each other, or at least a considerable time has elapsed since the operation of the plasma processing apparatus was started. The outer deposits M1 are not connected to each other.

  In addition, since the outer surface of the dielectric pipe 14 is partitioned by the leg portion (separating portion) 151 in the longitudinal direction, the inner deposit M2 is not connected in the longitudinal direction (regardless of the usage time of the apparatus). .

  As described above, the deposit shield 15 can prevent the outer deposit M1 and the inner deposit M2 from being continuously connected in the longitudinal direction of the dielectric pipe 14 (at least for a considerable time). Therefore, the problem that the high frequency induction electric field is shielded does not occur particularly when the deposit has conductivity. Further, even when the deposit does not have conductivity, it is possible to suppress the intensity of the high-frequency induction electric field from being weakened (at least for a considerable time). In addition, the maintenance work of periodically removing the deposits is unnecessary or the cycle of the work can be lengthened, so that the running cost of the apparatus can be reduced.

  Furthermore, if the distance between the tip of the flange 152 and the leg 151 is longer than a certain extent, the thin film material that has passed through the opening 153 penetrates partway from the tip of the flange 152 toward the leg 151, but beyond that Will not invade. In that case, at least a part of the outer surface of the dielectric pipe 14 corresponds to the shadow position of the collar, and is not covered by the inner deposit M2 at that position, so that the strength of the high frequency induction electric field is weakened. This can be prevented more reliably. In order to achieve such an effect, it is desirable that the distance between the tip of the collar 152 and the leg 151 is at least twice the size of the gap between the collar 152 and the dielectric pipe 14.

  Next, a plasma processing apparatus (sputtering apparatus) 20 using the high-frequency antenna 10 of this embodiment will be described. The plasma processing apparatus 20 includes a magnetron sputtering magnet 21 provided at the bottom of the vacuum vessel 11, a target holder 22 provided on the upper surface of the magnetron sputtering magnet 21, and a substrate holder provided facing the target holder 22. And the high-frequency antenna 10 of this embodiment is provided on the side of the magnetron sputtering magnet 21. A plate-like target T can be attached to the upper surface of the target holder 22, and a substrate S can be attached to the lower surface of the substrate holder 23. In addition, as described above, the plasma processing apparatus 20 is connected to the high frequency antenna 10 via the impedance matching unit 17 and the high frequency power supply 16 is connected between the target holder 22 and the substrate holder 23. A DC power supply 24 for applying a DC voltage is provided. In addition, a gas introduction port 27 for introducing a gas for generating plasma (plasma generation gas) into the vacuum container 11 is provided on the side wall of the vacuum container 11.

  The operation of the plasma processing apparatus 20 will be described. First, the target T is attached to the target holder 22, and the substrate S is attached to the substrate holder 23. Next, after the inside of the vacuum vessel 11 is evacuated, a plasma generating gas is introduced into the vacuum vessel 11 from the gas introduction port 27. Subsequently, a magnetic field is formed in the vicinity of the target T by passing a direct current through the electromagnet of the magnetron sputtering magnet 21. At the same time, a DC electric field is formed by a DC power source 24 between the target holder 22 and the substrate holder 23 as electrodes. Further, by applying high frequency power from the high frequency power supply 16 to the antenna conductor 13, a high frequency induction electric field is formed around the high frequency antenna 10 including the vicinity of the target T. Plasma is generated by these magnetic field, DC electric field and high frequency induction electric field. Then, the electrons supplied from the plasma perform a cycloid motion or a trochoidal motion by a magnetic field and a direct current electric field, whereby the ionization of the plasma generating gas is promoted and a large amount of cations are generated. When these cations collide with the surface of the target T, sputtered particles fly out from the surface of the target T, and the sputtered particles fly in the space between the target T and the substrate S and adhere to the surface of the substrate S. Thus, the sputtered particles are deposited on the surface of the substrate S, whereby a thin film is generated.

  In this apparatus, sputtered particles adhere to the high frequency antenna 10, but the presence of the deposit shield 15 can prevent the high frequency induction electric field generated by the high frequency antenna 10 from being shielded or weakened.

  Although the magnetron sputtering apparatus has been described here as an example, the high-frequency antenna 10 of the present embodiment is also formed on the side of the target holder 22 in the bipolar sputtering apparatus in which the magnetron sputtering magnet 21 is removed from the plasma processing apparatus 20. Can be provided.

  Next, the plasma processing apparatus 30 using the high frequency antenna 10 of the present embodiment will be described. The plasma processing apparatus 30 includes a substrate holder 33 provided at the bottom of the vacuum vessel 11 and a plurality of high-frequency antennas 10 arranged in parallel to the substrate S on the substrate holder 33 on the side wall of the vacuum vessel 11. . The plurality of high-frequency antennas 10 are connected in parallel to one high-frequency power supply 16 for each set of three or four. Further, on the side wall of the vacuum vessel 11, a first gas introduction port 371 for introducing a plasma generation gas into the vacuum vessel 11, and a gas (thin film raw material gas) or an etching process gas as a thin film material in the vacuum vessel 11. A second gas introduction port 372 is provided to be introduced closer to the substrate holder 33 than the region where the plasma generation gas is supplied.

  The operation of the plasma processing apparatus 30 will be described. First, after the substrate S is attached to the substrate holder 33, the inside of the vacuum vessel 11 is evacuated. Next, the plasma generation gas is introduced into the vacuum container 11 from the first gas introduction port 371 and the thin film source gas is introduced from the second gas introduction port 372, respectively. A high frequency current is supplied from the high frequency power supply 16 to the antenna conductor 13. As a result, a high-frequency induction electric field is formed in the vacuum vessel 11, electrons are accelerated by this high-frequency induction electric field, and the plasma generating gas is ionized to form plasma. Then, the thin film source gas or the etching process gas is decomposed by the electron collision in the plasma, and the thin film formation and the etching process are performed on the substrate S.

  In the plasma processing apparatus 30 as well, the decomposed thin film raw material or the etching process gas adheres to the high-frequency antenna 10, but the presence of the deposit shield 15 causes the high-frequency induction electric field to be shielded or weakened by the deposit. Can be prevented.

  In the plasma processing apparatuses 20 and 30 described so far, high-frequency antennas according to the second and subsequent embodiments described below can be used instead of the high-frequency antenna 10 according to the first embodiment.

  A second embodiment of the high-frequency antenna according to the present invention will be described with reference to FIGS. The high-frequency antenna 10A of the present embodiment has the same antenna conductor 13 and dielectric pipe 14 as the high-frequency antenna 10 of the first embodiment, and a deposit shield 15A is provided on the outer surface of the dielectric pipe 14. (FIG. 5). The deposit shield 15A includes a leg portion 151A that extends outward from the outer surface of the dielectric pipe 14 and a flange portion 152A that extends from the upper end of the leg portion 151A to one side in the longitudinal direction of the dielectric pipe 14. Therefore, in the longitudinal sectional view of FIG. 5 (a), the leg portion 151A and the flange portion 152A have an L-shape when combined.

  As shown in FIG. 6, the high-frequency antenna 10A of the present embodiment has an opening 153A between the adjacent flange portions 152A, as in the high-frequency antenna 10 of the first embodiment. The outer deposits M1 adhering to the flanges 152A are not connected to each other (until a considerable time elapses after the operation is started). Further, since the outer surface of the dielectric pipe 14 is partitioned by the leg portions (partition portions) 151A in the longitudinal direction, the inner deposit M2 is not connected in the longitudinal direction. Furthermore, since the thin film raw material penetrates only partway from the tip of the flange portion 152A toward the leg portion 151A, at least a part of the outer surface of the dielectric pipe 14 is not covered with the inner deposit M2. This prevents the high-frequency induction electric field from being shielded, particularly when the deposit is conductive, and also reduces the strength of the high-frequency induction electric field when the deposit is other than a conductive one. Can be suppressed.

  A third embodiment of the high-frequency antenna according to the present invention will be described with reference to FIGS. The high-frequency antenna 10B of the present embodiment includes the antenna conductor 13 and the dielectric pipe 14 similar to the high-frequency antennas of the first and second embodiments, and deposit shields (fins 15B) on the outer surface of the dielectric pipe 14. ) Is provided (FIG. 7). One fin 15 </ b> B extends outward from the outer surface of the dielectric pipe 14 and is formed so as to go around the periphery of the dielectric pipe 14. A large number of fins 15B are arranged in the longitudinal direction of the dielectric pipe 14, and are arranged at intervals sufficiently larger than the thickness thereof.

  As shown in FIG. 8, the high-frequency antenna 10B according to the present embodiment has a width of the tip of the fin 15B in the longitudinal direction of the antenna conductor 13 that is sufficiently narrower than the interval between the fins. It hardly extends in this direction. Therefore, the deposit M1 is not connected in this direction. Further, since the outer surface of the dielectric pipe 14 is partitioned by the fins 15B, the deposit M2 is not connected in the above direction. Therefore, similarly to the first and second embodiments, it is possible to prevent the high frequency induction electric field from being shielded and to suppress the strength of the high frequency induction electric field from being weakened.

  The thin film material also adheres to the side surface of the fin 15B, but the amount per unit area is sufficiently smaller than the tip of the fin 15B and the outer surface of the dielectric pipe 14, so that a thin film material layer is formed. Hateful. Even if such a layer is formed, the thickness of the layer is small and the current path is longer than when the fins 15B are not provided, so that the current for shielding the electromagnetic field can be reduced.

  In the third embodiment, a large number of fins that circulate around the dielectric pipe 14 are arranged, but instead, one fin 15B ′ is formed so as to advance spirally in the longitudinal direction of the dielectric pipe 14. Even so (FIG. 9), the same effect is obtained.

  A fourth embodiment of the high-frequency antenna according to the present invention will be described with reference to FIGS. As shown in FIG. 10A, the high-frequency antenna 10C of the present embodiment includes the antenna conductor 13 and the dielectric pipe 14 similar to those of the first to third embodiments, and the dielectric pipe 14 A deposit shield 15C is provided on the outside of the. The deposit shield 15C is obtained by providing a large number of holes 41A or holes 41B in a dielectric pipe. The material of the pipe of the deposit shield 15C may be the same as that of the dielectric pipe 14, or may be different from that. There is a cavity between the dielectric pipe 14 and the deposit shield 15C, and there is no equivalent to the leg in the first and second embodiments. The height of this cavity (distance between the outer surface of the dielectric pipe 14 and the inner surface of the deposit shield 15C) is fixed by fixing both the dielectric pipe 14 and the deposit shield 15C to the feedthrough 12. It is kept in.

  FIG. 10B shows the shape and position of the hole 41A, and FIG. 10C shows the shape and position of the hole 41B. These (b) and (c) are views in which the deposit shield 15C is cut open in the longitudinal direction and developed. The holes 41A have a long oval shape in the circumferential direction of the deposit shield 15C, and a plurality of the holes 41A are arranged in a line at the same period a in this direction. A large number of rows are arranged in the longitudinal direction of the deposit shield 15C. In addition, the holes 41A are arranged so that adjacent rows are shifted from each other by a / 2 in the circumferential direction, and the major axis b is larger than a / 2. Accordingly, at any position on the surface of the deposit shield 15C, the hole 41A exists in the longitudinal direction therefrom. The hole 41B is the same as the hole 41A except that the shape is a rectangle that is long in the circumferential direction of the deposit shield 15C.

  In this way, the presence of the hole 41A or 41B in the longitudinal direction from any position on the surface of the deposit shield 15C, the outer deposit M1 adhering to the surface of the deposit shield 15C is, as shown in FIG. It is not formed so as to extend at least in the longitudinal direction. Therefore, when a high frequency current is passed through the antenna conductor 13, it is possible to prevent the current from flowing in the longitudinal direction and shielding the high frequency induction electric field. Further, in the deposit shield 15C, the wall surface existing between the holes 41A or 41B plays the same role as the flange portion in the first and second embodiments, so that the outside of the dielectric pipe 14 corresponding to the position of the shadow is outside. It is possible to prevent the inner deposit M2 from being connected to the surface, thereby preventing the high frequency induction electric field from being shielded. In order to achieve this effect, between adjacent holes, the width of the portion covering the dielectric pipe 14 between the holes is 2 as the gap between the dielectric pipe 14 and the deposit shield 15C. It is desirable to make it more than twice.

DESCRIPTION OF SYMBOLS 10, 10A, 10B, 10C ... High frequency antenna 11 ... Vacuum container 12 ... Feed through 13 ... Antenna conductor 14 ... Dielectric pipes 15, 15A, 15C ... Deposit shields 151, 151A ... Legs 152, 152A ... Eaves 153 , 153A ... opening 15A ... deposit shield 15B ... fin 16 ... high frequency power supply 17 ... impedance matching unit 20 ... plasma processing apparatus (sputtering apparatus)
DESCRIPTION OF SYMBOLS 21 ... Magnet for magnetron sputtering 22 ... Target holder 23, 33 ... Substrate holder 24 ... DC power supply 27 ... Gas inlet 30 ... Plasma processing apparatus (plasma CVD apparatus, plasma etching apparatus)
371 ... first gas inlet 372 ... second gas inlet 41A, 41B ... hole S ... substrate T ... target

Claims (12)

A high-frequency antenna that is disposed in a vacuum vessel, forms a high-frequency induction electric field in the vacuum vessel by flowing a high-frequency current, and converts the plasma generation gas introduced into the vacuum vessel into plasma,
a) a linear antenna conductor;
b) a dielectric protective tube provided around the antenna conductor;
c) a shield provided around the protective tube, the deposit shield covering at least one portion of the protective tube and having at least one opening on an arbitrary line in the longitudinal direction of the antenna conductor;
A high-frequency antenna comprising:   The high-frequency antenna according to claim 1, wherein a part of the deposit shield is interrupted with respect to a longitudinal direction of the protective tube.   2. The high frequency according to claim 1, wherein the deposit shield is a band-shaped member provided in a spiral shape along the longitudinal direction of the protective tube, with a gap between the bands. antenna.   2. The deposit shield according to claim 1, wherein a plurality of holes having a long shape in the circumferential direction of the tube are arranged in a tubular member in a longitudinal direction with a circumferential position shifted. High frequency antenna.   5. The high-frequency antenna according to claim 1, further comprising a partition portion that protrudes from the protective tube and makes a round around the protective tube between the deposit shield and the protective tube.   The separator according to any one of claims 1 to 4, further comprising a partition portion that protrudes from the protective tube and extends spirally along a longitudinal direction of the protective tube between the deposit shield and the protective tube. High frequency antenna.   The high-frequency antenna according to claim 1, wherein the antenna conductor is an inductively coupled antenna having a number of turns of less than one turn.   The high-frequency antenna according to claim 7, wherein the antenna conductor is U-shaped. a) a vacuum vessel;
b) target holding means provided in the vacuum vessel;
c) substrate holding means provided facing the target holding means;
d) plasma generation gas introduction means for introducing a plasma generation gas into the vacuum vessel;
e) an electric field generating means for generating a direct current electric field or a high frequency electric field for sputtering in a region including the surface of the target held by the target holding means;
f) The high frequency antenna according to any one of claims 1 to 8, wherein a high frequency induction electric field is formed in a region including a surface of a target disposed in the vacuum vessel and held by the target holding means;
A plasma processing apparatus comprising:   The plasma processing apparatus according to claim 9, further comprising a magnetic field generation unit configured to generate a magnetic field having a component orthogonal to the direct current electric field or the high frequency electric field in a region including a surface of the target. a) a vacuum vessel;
b) substrate holding means provided in the vacuum vessel;
c) a plurality of high-frequency antennas according to any one of claims 1 to 8, provided in the vacuum vessel;
d) plasma generation gas introduction means for introducing a plasma generation gas into the vacuum vessel;
e) raw material gas introduction means for introducing a gas as a raw material for the thin film into the vacuum vessel;
A plasma processing apparatus comprising: a) a vacuum vessel;
b) substrate holding means provided in the vacuum vessel;
c) a plurality of high-frequency antennas according to any one of claims 1 to 8, provided in the vacuum vessel;
d) plasma generation gas introduction means for introducing a plasma generation gas into the vacuum vessel;
e) an etching process gas introduction means for introducing a gas used for an etching process into the vacuum vessel;
A plasma processing apparatus comprising:

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