JP2011180550A - Electro-optical device and electronic apparatus - Google Patents

Abstract

An electro-optical device such as a liquid crystal device can display a high-quality image.
The electro-optical device includes a pixel line (10a), a scanning line (11) extending along a first direction, a data line (6a) extending along a second direction, and a pixel area. A switching element (300) provided to be electrically connected to the data line, a first wiring (210) extending along the first direction, and a second region in the second direction. And a second wiring (310) extending along the image signal wiring for supplying an image signal to the switching element and a second wiring extending along the second direction for supplying a control signal to the switching element. Control signal wiring (220). The first wiring and the second wiring are provided in different layers, the control signal wiring is provided so as not to overlap the second wiring, and a layer between the first wiring and the second wiring. Is provided.
[Selection] Figure 7

Description

  The present invention relates to a technical field of an electro-optical device such as a liquid crystal device and an electronic apparatus such as a liquid crystal projector including the electro-optical device.

  As an electro-optical device of this type, for example, a pixel electrode, a pixel switching TFT (Thin Film Transistor) for selectively driving the pixel electrode, a scanning line, and a data line are provided on a substrate. Some devices perform active matrix driving.

  In such an electro-optical device, for example, image signals corresponding to a plurality of data lines are collectively supplied to a sampling circuit via one image signal wiring. The image signal supplied to the sampling circuit is distributed to each data line by switching on / off of the sampling switch at a timing corresponding to the data line to be supplied (see, for example, Patent Documents 1 and 2).

JP-A-5-307165 JP 2003-122271 A

  However, in an apparatus having the above-described sampling circuit, a comparison is made between an image signal wiring for supplying an image signal and a control signal wiring for supplying a control signal (in other words, a gate signal) for switching on / off of the sampling switch. Large parasitic capacitance may occur. In addition, a parasitic capacitance may similarly occur between two image signal wirings supplied with different image signals.

  Such parasitic capacitance may cause an increase in power consumption, for example. In addition, variations in parasitic capacitance among a plurality of wirings may cause display defects such as series streaks. That is, the above-described technique has a technical problem that it is difficult to display a high-quality image.

  SUMMARY An advantage of some aspects of the invention is that it provides an electro-optical device and an electronic apparatus capable of displaying a high-quality image.

  In order to solve the above problems, an electro-optical device according to an aspect of the invention includes a scanning line extending along a first direction and a data line extending along a second direction intersecting the first direction in the pixel region. A switching element provided in a peripheral region located around the pixel region so as to be electrically connected to the data line, a first wiring extending along the first direction, and the second direction And an image signal wiring for supplying an image signal to the switching element, and a second wiring electrically connected to the first wiring and the switching element, respectively. A control signal wiring that extends along a direction and supplies a control signal to the switching element, the first wiring and the second wiring are provided in different layers, and the control signal wiring is If it overlaps with the second wiring Together are provided odd, it is provided in a layer between the first wiring and the second wiring.

  In the electro-optical device of the present invention, wirings such as scanning lines and data lines, and electronic elements such as pixel switching TFTs are laminated on the substrate as necessary while being insulated from each other via an insulating film. Thus, a circuit for driving the pixel electrode is configured, and a plurality of pixel electrodes are provided on the upper layer side.

  The scanning lines are provided so as to extend in the first direction in the pixel region, and the data lines are provided so as to extend in the second direction intersecting with the first direction. That is, the scanning line and the data line are provided so as to cross each other. The pixel electrode is provided for each pixel so as to correspond to, for example, the intersection of the scanning line and the data line.

  When the electro-optical device of the present invention operates, for example, the switching operation of the pixel switching TFT electrically connected to the pixel electrode is controlled through the scanning line, and the image signal is supplied through the data line. A voltage corresponding to the image signal is applied to the pixel electrode through the TFT. Thereby, it is possible to display an image in a pixel region in which a plurality of pixel electrodes are arranged.

  The electro-optical device of the present invention further includes a switching element provided in a peripheral area located around the pixel area so as to be electrically connected to the data line, an image signal wiring for supplying an image signal to the switching element, Control signal wiring for supplying a control signal to the switching element is provided. According to such a configuration, the switching operation of the switching element is controlled according to the control signal supplied via the control signal wiring, and the image signal is supplied via the image signal wiring, so that the data line Is supplied with an image signal.

  More specifically, the number of image signal wirings is smaller than the total number of data lines, for example, so that image signals to be supplied to a plurality of data lines can be supplied together by one image signal wiring. It is configured. A switching element is provided for each data line, and ON / OFF is switched at a timing corresponding to each data line. As a result, the image signals supplied together are distributed to the data lines to be supplied.

  In the present invention, the image signal wiring includes a first wiring extending along the first direction (that is, the scanning line direction), and a second wiring when extending along the second direction (that is, the data line direction). have. That is, the image signal line is configured to have two wirings extending in different directions. The second wiring is electrically connected to the first wiring and the switching element, respectively. Therefore, the image signal is transmitted in the order of the first wiring and the second wiring and is supplied to the switching element.

  On the other hand, the control signal wiring is provided so as to extend along the second direction. That is, the control signal wiring is provided along the same direction as the second wiring in the image signal wiring.

  Here, particularly in the present invention, the first wiring and the second wiring in the image signal wiring are provided in different layers. For example, an interlayer insulating film is formed between the first wiring and the second wiring, and the first wiring and the second wiring are electrically connected to each other by a contact hole or the like penetrating the interlayer insulating film. Yes. Typically, the first wiring is formed as an upper layer side, and the second wiring is formed as a lower layer side layer.

  Furthermore, in the present invention, the control signal wiring is provided so as not to overlap the second wiring in the image signal wiring, and is provided in a layer between the first wiring and the second wiring. That is, the control signal wiring, the first wiring, and the second wiring are provided in different layers. According to such a laminated structure, the distance between the first wiring and the second wiring in the image signal wiring can be increased. That is, the first wiring and the second wiring can be separated from each other by the amount of the control signal wiring provided in the intermediate layer.

  By increasing the distance between the first wiring and the second wiring, it is possible to reduce the parasitic capacitance generated between the first wiring and the second wiring that supply different image signals. Specifically, the parasitic capacitance generated between one first wiring and another second wiring different from the one second wiring electrically connected to the one first wiring is reduced. Can do.

  In addition, in the present invention, since the second wiring and the control signal wiring are provided in different layers, the parasitic capacitance generated between the second wiring and the control signal wiring can be reduced. Since the second wiring and the control signal wiring are provided along the same direction (that is, the second direction), there are many places where parasitic capacitance may occur. However, as described above, the parasitic capacitance can be reliably reduced by providing the layers in different layers. Further, since the second wiring and the control signal wiring are provided so as not to overlap each other, the distance between the second wiring and the control signal wiring is further increased. Therefore, the parasitic capacitance can be effectively reduced.

  The parasitic capacitance described above may cause an increase in power consumption, for example. In addition, variations in parasitic capacitance among a plurality of wirings may cause display defects such as series streaks. On the other hand, in the electro-optical device of the present invention, since the parasitic capacitance is reduced in the image signal wiring and the control signal wiring, the power consumption of the device can be reduced. In addition, by reducing the parasitic capacitance, variations can be suppressed and display defects can be reduced.

  As described above, according to the electro-optical device of the present invention, it is possible to display a high-quality image with low power consumption.

  In one aspect of the electro-optical device of the present invention, the second wiring is provided in a layer farther from the control signal wiring than the first wiring.

  According to this aspect, the distance between the second wiring and the control signal line in the image signal wiring is made larger than the distance between the first wiring and the control signal wiring. Here, in particular, as described above, parasitic capacitance is relatively easily generated between the second wiring and the control signal line. Therefore, if the distance between the second wiring and the control signal line is increased, the parasitic capacitance can be reduced extremely efficiently.

  In another aspect of the electro-optical device of the present invention, the control signal wiring is formed in the same layer as the data line.

  According to this aspect, since the control signal wiring and the data line are formed as the same layer, the above-described configuration can be realized without increasing the number of stacked layers. That is, it is possible to prevent the apparatus configuration and the manufacturing process from becoming complicated and the manufacturing cost from increasing.

  Here, the “same layer” means a layer formed by the same film forming step, and the same applies to the following embodiments.

  In another aspect of the electro-optical device according to the aspect of the invention, the pixel region includes a capacitor line that supplies a capacitor potential for forming a storage capacitor, and the first wiring is formed as the same layer as the capacitor line. Yes.

  According to this aspect, the storage capacitor is formed in the pixel region, and the capacitor potential is supplied to the storage capacitor via the capacitor line. The capacitor line supplies a capacitor potential to the electrode that is not electrically connected to the pixel electrode, for example, of the two electrodes forming the storage capacitor. According to the configuration of this aspect, since the first wiring and the capacitor line are formed as the same layer, the above-described configuration can be realized without increasing the number of stacked layers. That is, it is possible to prevent the apparatus configuration and the manufacturing process from becoming complicated and the manufacturing cost from increasing.

  In another aspect of the electro-optical device according to the aspect of the invention, the pixel region includes a storage capacitor including an upper capacitor electrode, a lower capacitor electrode, and a capacitor insulating film, and the second wiring is formed as the same layer as the upper capacitor electrode. Has been.

  According to this aspect, in the pixel region, the storage capacitor is formed by disposing the upper capacitor electrode and the lower capacitor electrode through the capacitor insulating film. The storage capacitor is electrically connected to the pixel electrode, for example, and functions as a storage capacitor that temporarily holds the potential of the pixel electrode. According to the configuration of this aspect, since the second wiring and the upper capacitor electrode are formed as the same layer, the above-described configuration can be realized without increasing the number of stacked layers. That is, it is possible to prevent the apparatus configuration and the manufacturing process from becoming complicated and the manufacturing cost from increasing.

  In order to solve the above problems, an electronic apparatus according to the present invention includes the above-described electro-optical device according to the present invention (including various aspects thereof).

  According to the electronic apparatus of the present invention, since the electro-optical device according to the present invention described above is included, a projection display device, a television set, a mobile phone, an electronic notebook, a word processor capable of performing high-quality display. Various electronic devices such as a viewfinder type or a monitor direct view type video tape recorder, a workstation, a videophone, a POS terminal, and a touch panel can be realized. In addition, as an electronic apparatus of the present invention, for example, an electrophoretic device such as electronic paper can be realized.

  The effect | action and other gain of this invention are clarified from the form for implementing invention demonstrated below.

1 is a plan view illustrating an overall configuration of an electro-optical device according to an embodiment. It is the HH 'sectional view taken on the line of FIG. FIG. 3 is an equivalent circuit diagram of various elements, wirings, and the like provided in the image display region of the electro-optical device according to the embodiment. It is a top view which shows the concrete structure of a pixel part transparently. FIG. 5 is a cross-sectional view taken along line AA ′ in FIG. 4. It is a top view which shows the specific structure of a sampling circuit. FIG. 7 is a sectional view taken along line BB ′ in FIG. 6. It is a top view which shows the structure of the projector which is an example of the electronic device to which the electro-optical apparatus is applied.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<Electro-optical device>
An electro-optical device according to this embodiment will be described with reference to FIGS. In the following embodiments, a TFT active matrix driving type liquid crystal device with a built-in driving circuit will be described as an example of the electro-optical device of the present invention.

  First, the overall configuration of the electro-optical device according to the present embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view showing the overall configuration of the electro-optical device according to this embodiment, and FIG. 2 is a cross-sectional view taken along the line HH ′ of FIG.

  1 and 2, in the electro-optical device according to the present embodiment, a TFT array substrate 10 and a counter substrate 20 are disposed to face each other. The TFT array substrate 10 is, for example, a transparent substrate such as a quartz substrate or a glass substrate, a silicon substrate, or the like. The counter substrate 20 is a transparent substrate such as a quartz substrate or a glass substrate. A liquid crystal layer 50 is sealed between the TFT array substrate 10 and the counter substrate 20. The liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several types of nematic liquid crystals are mixed, and takes a predetermined alignment state between a pair of alignment films.

  The TFT array substrate 10 and the counter substrate 20 are bonded to each other by a sealing material 52 provided in a sealing region located around the image display region 10a provided with a plurality of pixel electrodes.

  The sealing material 52 is made of, for example, an ultraviolet curable resin, a thermosetting resin, or the like for bonding the two substrates, and is applied on the TFT array substrate 10 in the manufacturing process and then cured by ultraviolet irradiation, heating, or the like. It is. In the sealing material 52, a gap material such as glass fiber or glass beads for dispersing the distance between the TFT array substrate 10 and the counter substrate 20 (that is, the inter-substrate gap) to a predetermined value is dispersed. Note that the gap material may be arranged in the image display region 10a or a peripheral region located around the image display region 10a in addition to or instead of the material mixed in the seal material 52.

  A light-shielding frame light-shielding film 53 that defines the frame area of the image display area 10a is provided on the counter substrate 20 side in parallel with the inside of the seal area where the sealing material 52 is disposed. A part or all of the frame light shielding film 53 may be provided as a built-in light shielding film on the TFT array substrate 10 side.

  In the peripheral region, the sampling circuit 7, the data line driving circuit 101, and the external circuit connection terminal 102 are provided along one side of the TFT array substrate 10 in a region located outside the sealing region where the sealing material 52 is disposed. ing. The scanning line driving circuit 104 is provided along two sides adjacent to the one side so as to be covered with the frame light shielding film 53. Further, in order to connect the two scanning line driving circuits 104 provided on both sides of the image display region 10 a in this way, a plurality of the pixel lines are covered along the remaining side of the TFT array substrate 10 and covered with the frame light shielding film 53. Wiring 105 is provided.

  In a region facing the four corners of the counter substrate 20 on the TFT array substrate 10, vertical conduction terminals 106 for connecting the two substrates with a vertical conduction material are arranged. Thus, electrical conduction can be established between the TFT array substrate 10 and the counter substrate 20.

  In FIG. 2, on the TFT array substrate 10, a layered structure is formed in which pixel switching TFTs as drive elements, wiring lines such as scanning lines and data lines are formed. Although the detailed configuration of this laminated structure is not shown in FIG. 2, pixel electrodes 9a made of a transparent material such as ITO (Indium Tin Oxide) are provided on the laminated structure with a predetermined pattern for each pixel. It is formed in an island shape. If the pixel electrode 9a is made of a reflective material such as aluminum, a reflective electro-optical device can be realized.

  The pixel electrode 9 a is formed in the image display area 10 a on the TFT array substrate 10 so as to face the counter electrode 21. On the surface of the TFT array substrate 10 facing the liquid crystal layer 50, that is, on the pixel electrode 9a, an alignment film 16 is formed so as to cover the pixel electrode 9a.

  A light shielding film 23 is formed on the surface of the counter substrate 20 facing the TFT array substrate 10. For example, the light shielding film 23 is formed in a lattice shape when viewed in plan on the facing surface of the facing substrate 20. In the counter substrate 20, a non-opening area is defined by the light shielding film 23, and an area partitioned by the light shielding film 23 is an opening area through which light emitted from, for example, a projector lamp or a direct viewing backlight is transmitted. The light shielding film 23 may be formed in a stripe shape, and the non-opening region may be defined by the light shielding film 23 and various components such as data lines provided on the TFT array substrate 10 side.

  On the light shielding film 23, a counter electrode 21 made of a transparent material such as ITO is formed so as to face the plurality of pixel electrodes 9a. Further, in order to perform color display in the image display area 10a, a color filter (not shown in FIG. 2) may be formed on the light shielding film 23 in an area including a part of the opening area and the non-opening area. Good. An alignment film 22 is formed on the counter electrode 21 on the counter surface of the counter substrate 20.

  In addition to the above-described driving circuits such as the data line driving circuit 101 and the scanning line driving circuit 104, a plurality of data lines are precharged at a predetermined voltage level on the TFT array substrate 10 shown in FIGS. A precharge circuit for supplying a signal prior to an image signal, an inspection circuit for inspecting the quality, defects, etc. of the electro-optical device during manufacture or at the time of shipment may be formed.

  Next, an electrical configuration of the pixel portion of the electro-optical device according to the present embodiment will be described with reference to FIG. FIG. 3 is an equivalent circuit diagram of various elements, wirings, and the like in a plurality of pixels formed in a matrix forming the image display area of the electro-optical device according to this embodiment.

  In FIG. 3, a pixel electrode 9a and a TFT 30 are formed in each of a plurality of pixels formed in a matrix that forms the image display region 10a. The TFT 30 is electrically connected to the pixel electrode 9a, and performs switching control of the pixel electrode 9a during the operation of the electro-optical device according to the present embodiment. The data line 6a to which the image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. May be.

  The scanning line 11 is electrically connected to the gate of the TFT 30, and the electro-optical device according to the present embodiment pulses the scanning signals G 1, G 2,. Gm is applied in this order in a line sequential manner. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and the image signal S1, S2,... Supplied from the data line 6a is closed by closing the switch of the TFT 30 serving as a switching element for a certain period. Sn is written at a predetermined timing. A predetermined level of image signals S1, S2,..., Sn written in the liquid crystal as an example of the electro-optical material via the pixel electrode 9a is held for a certain period with the counter electrode formed on the counter substrate. The

  The liquid crystal constituting the liquid crystal layer 50 (see FIG. 2) modulates light and enables gradation display by changing the orientation and order of the molecular assembly depending on the applied voltage level. For example, in the normally white mode, the transmittance for incident light is reduced according to the voltage applied in units of each pixel. In the normally black mode, the transmittance is applied in units of each pixel. As a result, the transmittance for incident light is increased, and light having a contrast corresponding to an image signal is emitted from the electro-optical device as a whole.

  In order to prevent the image signal held here from leaking, a storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode 21 (see FIG. 2). According to the storage capacitor 70, the potential holding characteristic of the pixel electrode 9a is improved, and the display characteristics such as improvement of contrast and reduction of flicker can be improved.

  Next, a specific configuration of the pixel portion that realizes the above-described operation will be described with reference to FIGS. FIG. 4 is a plan view transparently showing a specific configuration of the pixel portion. FIG. 5 is a cross-sectional view taken along the line A-A ′ of FIG. 4. In FIGS. 4 and 5, the scale of each layer / member is different for each layer / member to have a size that can be recognized on the drawing. In FIG. 4, for convenience of explanation, illustration of each layer on the lower layer side from the semiconductor layer and on the upper layer side from the data line is omitted.

  4 and 5, the TFT 30 includes the semiconductor layer 1a and the gate electrode 3b.

  The semiconductor layer 1a is made of, for example, polysilicon, and has a channel region 1a ′ having a channel length along the Y direction, a data line side LDD region 1b, a pixel electrode side LDD region 1c, a data line side source / drain region 1d, and a pixel electrode side. It consists of a source / drain region 1e. That is, the TFT 30 has an LDD structure.

  The data line side source / drain region 1d and the pixel electrode side source / drain region 1e are formed substantially in mirror symmetry along the Y direction with respect to the channel region 1a '. The data line side LDD region 1b is formed between the channel region 1a 'and the data line side source / drain region 1d. The pixel electrode side LDD region 1c is formed between the channel region 1a 'and the pixel electrode side source / drain region 1e. The data line side LDD region 1b, the pixel electrode side LDD region 1c, the data line side source / drain region 1d, and the pixel electrode side source / drain region 1e are formed by implanting impurities into the semiconductor layer 1a by an impurity implantation such as an ion implantation method. This is an impurity region. The data line side LDD region 1b and the pixel electrode side LDD region 1c are formed as low concentration impurity regions with less impurities than the data line side source / drain region 1d and the pixel electrode side source / drain region 1e, respectively. According to such an impurity region, when the TFT 30 is not operating, the off-current flowing between the source region and the drain region can be reduced, and a decrease in the on-current flowing when the TFT 30 is operating can be suppressed. The TFT 30 preferably has an LDD structure. However, the TFT 30 may have an offset structure in which no impurity implantation is performed in the data line side LDD region 1b and the pixel electrode side LDD region 1c. A self-alignment type in which the data line side source / drain region and the pixel electrode side source / drain region are formed by implanting the concentration may be used.

  The gate electrode 3b is made of, for example, conductive polysilicon, and is formed so as to partially face the channel region 1a 'of the semiconductor layer 1a. The gate electrode 3b and the semiconductor layer 1a are insulated by the gate insulating film 2. A first relay layer 91 is formed in the same layer as the gate electrode 3b.

  In FIG. 5, the scanning line 11 is provided on the lower layer side of the TFT 30 on the TFT array substrate 10 through the base insulating film 12. The scanning line 11 includes, for example, at least one of refractory metals such as Ti (titanium), Cr (chromium), W (tungsten), Ta (tantalum), Mo (molybdenum), and Pd (palladium). It is made of a light shielding material such as a simple metal, an alloy, a metal silicide, a polysilicide, or a laminate of these. The scanning line 11 is incident on the TFT array substrate 10 from the TFT array substrate 10 side, such as back-surface reflection on the TFT array substrate 10 or light that is emitted from another liquid crystal device by a multi-plate projector or the like and penetrates the composite optical system. It also functions as a lower light-shielding film that shields the channel region 1a ′ of the TFT 30 and its periphery from the return light.

  In FIG. 4, the scanning line 11 is electrically connected to the gate electrode 3b through contact holes 82a and 82b. Thereby, the gate signal transmitted by the scanning line 11 is supplied to the gate electrode 3b.

  In FIG. 5, the base insulating film 12 is formed on the entire surface of the TFT array substrate 10 in addition to the function of insulating the TFT 30 from the scanning line 11, so that the surface of the TFT array substrate 10 is rough during polishing or after cleaning. It has a function of preventing deterioration of the characteristics of the pixel switching TFT 30 due to remaining dirt and the like.

  A storage capacitor 70 is provided on the upper layer side of the TFT 30 on the TFT array substrate 10 via the first interlayer insulating film 41. The storage capacitor 70 is formed by arranging a lower capacitor electrode 71 and an upper capacitor electrode 72 to face each other with a dielectric film 75 therebetween.

  The upper capacitor electrode 72 is a fixed potential side capacitor electrode that is electrically connected to a constant potential source via a capacitor line 300 described later and maintained at a fixed potential. The upper capacitor electrode 72 is formed of a non-transparent metal film containing a metal or alloy such as Al (aluminum) or Ag (silver), for example, and also functions as an upper light shielding film (built-in light shielding film) that shields the TFT 30. To do. The upper capacitor electrode 72 includes, for example, at least one of refractory metals such as Ti, Cr, W, Ta, Mo, and Pd, a single metal, an alloy, a metal silicide, and a polysilicide, which are laminated. You may be comprised from things. In this case, the function of the upper capacitor electrode 72 as a built-in light shielding film can be enhanced.

  The lower capacitor electrode 71 is a pixel potential side capacitor electrode electrically connected to the pixel electrode side source / drain region 1e of the TFT 30 and the pixel electrode 9a. More specifically, the lower capacitor electrode 71 is electrically connected to the pixel electrode side source / drain region 1 e through the contact hole 83 and electrically connected to the first relay layer 91 through the contact hole 84. Has been. The first relay layer 91 is electrically connected to the second relay layer 92 through the contact hole 85. The second relay layer 92 is electrically connected to the third relay layer 93 through the contact hole 86. The third relay layer 93 is electrically connected to the pixel electrode 9 a through the contact hole 87. That is, the lower capacitor electrode 71 relays the electrical connection between the pixel electrode side source / drain region 1e and the pixel electrode 9a together with the first relay layer 91, the second relay layer 92, and the third relay layer 93. The lower capacitance electrode 71 has a function as a light absorption layer or a light shielding film disposed between the upper capacitance electrode 71 as an upper light shielding film and the TFT 30 in addition to a function as a pixel potential side capacitance electrode.

  The dielectric film 75 is, for example, a single layer structure or a multilayer structure formed of a silicon oxide (SiO 2) film such as an HTO (High Temperature Oxide) film, an LTO (Low Temperature Oxide) film, or a silicon nitride (SiN) film. have.

  A data line 6 a and a second relay layer 92 are provided on the upper layer side of the storage capacitor 70 on the TFT array substrate 10 via the second interlayer insulating film 42.

  The data line 6a is electrically connected to the data line side source / drain region 1d of the semiconductor layer 1a through a contact hole 81 penetrating the first interlayer insulating film 41, the second interlayer insulating film 42, and the third interlayer insulating film 43. It is connected. The data line 6a and the inside of the contact hole 81 are made of, for example, an Al (aluminum) -containing material such as Al—Si—Cu or Al—Cu, Al alone, or a multilayer film including an Al layer and a TiN layer. The data line 6a also has a function of shielding the TFT 30 from light.

  The second relay layer 92 is formed on the third interlayer insulating film 43 in the same layer as the data line 6a. For the data line 6a and the second relay layer 92, a thin film made of a conductive material such as a metal film is formed on the third interlayer insulating film 43 by using a thin film forming method, and the thin film is partially formed. It is formed in a state of being separated from each other by removal, that is, patterning. Thus, if the data line 6a and the second relay layer 92 are formed in the same process, the device manufacturing process can be simplified.

  A capacitor line 300 and a third relay layer 93 are provided on the upper layer side of the data line 6 a on the TFT array substrate 10 via the third interlayer insulating film 43.

  The capacitor line 300 is configured to include a metal such as aluminum, and supplies a fixed potential to the upper capacitor electrode as described above. On the other hand, the third relay layer 93 formed in the same layer as the capacitor line 300 relays electrical conduction between the pixel electrode side source / drain region 1e and the pixel electrode 9a in the semiconductor layer 1a.

  The pixel electrode 9 a is formed on the upper layer side of the capacitor line 300 via the fourth interlayer insulating film 44. The pixel electrode 9a is electrically connected to the pixel electrode side source / drain region 1e of the semiconductor layer 1a via the third relay layer 93, the second relay layer 92, the first relay layer, and the lower capacitor electrode 71. The contact hole 87 that electrically connects the pixel electrode 9a and the third relay layer 93 is a conductive material that constitutes the pixel electrode 9a such as ITO on the inner wall of the hole formed so as to penetrate the fifth interlayer insulating layer 45. It is formed by depositing a material. An alignment film subjected to a predetermined alignment process such as a rubbing process is provided on the upper surface of the pixel electrode 9a.

  The configuration of the pixel portion described above is common to each pixel portion, and such pixel portions are periodically formed in the image display region 10a (see FIG. 1).

  Next, a specific configuration of the sampling circuit 7 (see FIG. 1) in the electro-optical device according to the present embodiment will be described with reference to FIGS. FIG. 6 is a plan view showing a specific configuration of the sampling circuit. 7 is a cross-sectional view taken along the line BB ′ of FIG.

  In FIG. 6, the image signal is supplied to the sampling circuit 7 through the image signal line 210. Six image signal lines 210 are provided along the X direction, and supply different image signals (VID1 to VID6), respectively. The image signal line 210 is an example of the “first wiring” in the present invention.

  The image signal line 210 is electrically connected to the sampling switch 350 via a lead wiring 310 extending in the Y direction. The lead wiring 310 is electrically connected to the source region of the sampling switch 350. The lead-out wiring 310 here is an example of the “second wiring” in the present invention, and the sampling switch 350 is an example of the “switching element” in the present invention.

  An image signal output line 320 is electrically connected to the drain region of the sampling switch 7. The image signal output line 320 is electrically connected to the data line 6 a at the end opposite to the sampling switch 7. Therefore, the image signal output from the sampling switch 7 is supplied to the data line 6a.

  A control signal is supplied to the gate of the sampling switch 7 via the control signal wiring 220. The sampling switch 7 is turned on and off at a timing according to the control signal. When the sampling switch 7 is turned on, the image signal supplied from the lead-out wiring 310 is output via the image signal output line 320. As a result, image signals can be supplied through the six image signal lines 210 to an extremely large number of data lines 6a.

  In FIG. 7, the lead wiring 310 is formed on the first interlayer insulating film 41. That is, the lead wiring 310 is formed in the same layer as the upper capacitor electrode 72 (see FIG. 5) constituting the storage capacitor 70. Further, the control signal wiring 220 is formed on the second interlayer insulating film 42. That is, the control signal wiring 220 is formed in the same layer as the data line 6a. The image signal line 210 is formed on the third interlayer insulating film 43. That is, the image signal line 210 is formed in the same layer as the capacitor line 300.

  In the electro-optical device according to the present embodiment, in particular, the control signal wiring 220 is provided in a layer between the image signal line 210 that supplies the image signal and the extraction wiring 310. According to such a laminated structure, the distance L1 between the image signal line 210 and the lead-out wiring 310 can be reduced as compared with the case where the control signal wiring 220 is provided on the upper layer side of the image signal line 210 or on the lower layer side of the lead-out wiring 310. Can be bigger.

  By increasing the distance L1 between the image signal line 210 and the lead-out wiring 310, the parasitic capacitance generated between the image signal line 210 and the lead-out wiring 310 that supply different image signals can be reduced. Specifically, the parasitic capacitance generated between the image signal line 210 and the lead-out wiring 310 that are not electrically connected to each other through the contact hole 400 can be reduced.

  In the present embodiment, since the lead-out wiring 310 and the control signal wiring 220 are provided in different layers, the parasitic capacitance generated between the lead-out wiring 310 and the control signal wiring 220 can be reduced. Since the lead-out wiring 310 and the control signal wiring 220 are provided along the same direction (that is, the Y direction) as shown in FIG. 6, there are many places where parasitic capacitance may occur. However, the parasitic capacitance can be reliably reduced by providing the layers in different layers. Further, since the lead-out wiring 310 and the control signal wiring 220 are provided so as not to overlap each other, the distance L2 between the lead-out wiring 310 and the control signal wiring 220 is further increased. Therefore, the parasitic capacitance can be effectively reduced.

  In addition, in the present embodiment, the thickness of the second interlayer insulating film 42 is configured to be larger than the thickness of the third interlayer insulating film 43. That is, the distance L4 between the lead-out wiring 310 and the control signal wiring 220 is made larger than the distance L3 between the image signal line 210 and the control signal wiring 220. As described above, parasitic capacitance is relatively easily generated between the lead-out wiring 310 and the control signal wiring 220. Therefore, if the distance L4 between the lead wiring 310 and the control signal wiring 220 is increased, the parasitic capacitance can be reduced extremely efficiently.

  The parasitic capacitance described above may cause an increase in power consumption, for example. In addition, variations in parasitic capacitance among a plurality of wirings may cause display defects such as series streaks. On the other hand, in this embodiment, since the parasitic capacitance generated between the image signal line 210, the lead-out wiring 310, and the control signal wiring 220 is reduced, the power consumption of the apparatus can be reduced. In addition, by reducing the parasitic capacitance, variations can be suppressed and display defects can be reduced.

  As described above, according to the electro-optical device according to the present embodiment, it is possible to display a high-quality image with low power consumption.

<Electronic equipment>
Next, the case where the liquid crystal device which is the above-described electro-optical device is applied to various electronic devices will be described. FIG. 8 is a plan view showing a configuration example of the projector. Hereinafter, a projector using the liquid crystal device as a light valve will be described.

  As shown in FIG. 8, a lamp unit 1102 made of a white light source such as a halogen lamp is provided inside the projector 1100. The projection light emitted from the lamp unit 1102 is separated into three primary colors of RGB by four mirrors 1106 and two dichroic mirrors 1108 arranged in the light guide 1104, and serves as a light valve corresponding to each primary color. The light enters the liquid crystal panels 1110R, 1110B, and 1110G.

  The configurations of the liquid crystal panels 1110R, 1110B, and 1110G are the same as those of the liquid crystal device described above, and are driven by R, G, and B primary color signals supplied from the image signal processing circuit. The light modulated by these liquid crystal panels enters the dichroic prism 1112 from three directions. In the dichroic prism 1112, R and B light is refracted at 90 degrees, while G light travels straight. Therefore, as a result of the synthesis of the images of the respective colors, a color image is projected onto the screen or the like via the projection lens 1114.

  Here, paying attention to the display images by the liquid crystal panels 1110R, 1110B, and 1110G, the display image by the liquid crystal panel 1110G needs to be horizontally reversed with respect to the display images by the liquid crystal panels 1110R and 1110B.

  Since light corresponding to the primary colors R, G, and B is incident on the liquid crystal panels 1110R, 1110B, and 1110G by the dichroic mirror 1108, it is not necessary to provide a color filter.

  In addition to the electronic device described with reference to FIG. 8, a mobile personal computer, a mobile phone, an LCD TV, a viewfinder type, a monitor direct view type video tape recorder, a car navigation device, a pager, an electronic device Examples include notebooks, calculators, word processors, workstations, videophones, POS terminals, and devices with touch panels. Needless to say, the present invention can be applied to these various electronic devices.

  In addition to the liquid crystal devices described in the above embodiments, the present invention includes a reflective liquid crystal device (LCOS), a plasma display (PDP), a field emission display (FED, SED), an organic EL display, and a digital micromirror device. (DMD), electrophoresis apparatus and the like are also applicable.

  The present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification, and an electro-optical device with such a change. In addition, an electronic apparatus including the electro-optical device is also included in the technical scope of the present invention.

  DESCRIPTION OF SYMBOLS 1a ... Semiconductor layer, 3b ... Gate electrode, 6a ... Data line, 7 ... Sampling circuit, 9a ... Pixel electrode, 10 ... TFT array substrate, 10a ... Image display area, 11 ... Scanning line, 20 ... Counter substrate, 30 ... TFT , 50 ... Liquid crystal layer, 70 ... Storage capacitor, 71 ... Lower capacitor electrode, 72 ... Upper capacitor electrode, 75 ... Dielectric film, 101 ... Data line driving circuit, 102 ... External circuit connection terminal, 104 ... Scanning line driving circuit, 210 ... Image signal line, 220 ... Control signal wiring, 300 ... Capacitance line, 310 ... Lead-out wiring, 320 ... Image signal output line, 350 ... Sampling switch

Claims (6)

In the pixel area,
A scan line extending along a first direction;
A data line extending along a second direction intersecting the first direction;
In a peripheral region located around the pixel region,
A switching element provided to be electrically connected to the data line;
A first wiring extending along the first direction; and a second wiring extending along the second direction and electrically connected to the first wiring and the switching element, respectively. Image signal wiring for supplying an image signal to the switching element;
A control signal line extending along the second direction and supplying a control signal to the switching element;
The first wiring and the second wiring are provided in different layers,
The electro-optical device, wherein the control signal wiring is provided so as not to overlap the second wiring, and is provided in a layer between the first wiring and the second wiring.   The electro-optical device according to claim 1, wherein the second wiring is provided in a layer farther from the control signal wiring than the first wiring.   The electro-optical device according to claim 1, wherein the control signal wiring is formed as the same layer as the data line. In the pixel region,
A capacitor line for supplying a capacitor potential for forming a storage capacitor;
The electro-optical device according to any one of claims 1 to 3, wherein the first wiring is formed as the same layer as the capacitor line. In the pixel region,
A storage capacitor comprising an upper capacitor electrode, a lower capacitor electrode and a capacitor insulating film is provided.
The electro-optical device according to claim 1, wherein the second wiring is formed as the same layer as the upper capacitor electrode.   An electronic apparatus comprising the electro-optical device according to claim 1.

Images