JP2011165708A - Method of manufacturing semiconductor laser apparatus, and semiconductor laser apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor laser apparatus, capable of suppressing increase of the size of a laser device, and facilitating wire bonding to the laser device. <P>SOLUTION: The method of manufacturing the semiconductor laser apparatus 40 includes: a step of forming a first semiconductor laser device 10 having a first surface including a flat part 1a and a second conduction-side electrode 5 and a second surface including a first conduction type semiconductor layer 1, a step of forming a second semiconductor laser device 20 having a third surface including a second conduction-side electrode 25 and a fourth surface including a first conduction type semiconductor layer 21, and a step of bonding the third surface to a region 30a of a support substrate 30, and thereafter, bonding the first surface to a region 30b of the support substrate 30 so that the bottom surface of the flat part 1a lies on the top surface of the first conduction type semiconductor layer 21. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a semiconductor laser device manufacturing method and a semiconductor laser device, and more particularly to a semiconductor laser device manufacturing method and a semiconductor laser device in which a plurality of semiconductor laser elements are joined.

  Conventionally, in a CD (compact disc) / CD-R (compact disc-recordable) drive, an infrared semiconductor laser element having a wavelength of about 780 nm has been used as a light source. In a DVD (digital versatile disc) drive, a red semiconductor laser element having a wavelength of about 650 nm has been used as a light source.

  On the other hand, in recent years, a DVD that can be recorded / reproduced using blue-violet light has been developed. For such DVD recording / reproduction, a blue DVD drive using a blue-violet semiconductor laser element having a wavelength of about 405 nm is being developed at the same time. This DVD drive requires compatibility with conventional CD / CD-R and DVD.

  In this case, a method of providing a plurality of optical disk pickups for individually emitting infrared light, red light and blue-violet light in a DVD drive, or infrared, red and blue-violet semiconductor laser elements individually in one optical disk pickup The compatibility with conventional CDs, DVDs, and recordable / reproducible DVDs can be realized by the method of providing them. However, this method causes an increase in the number of parts, which makes it difficult to reduce the size of the pickup device, simplify the configuration, and reduce the price.

  In order to suppress such an increase in the number of parts, conventionally, a two-wavelength semiconductor laser element in which an infrared laser and a red laser are integrated on one chip has been put into practical use. On the other hand, since the blue-violet laser is not formed on a GaAs substrate or the like, it is very difficult to make the blue-violet semiconductor laser element into one chip together with the infrared and red semiconductor laser elements.

  Therefore, conventionally, a semiconductor laser in which a laser element having a long wavelength (wavelength 600 to 700 nm) such as a red or infrared semiconductor laser element is bonded to a laser element having a short wavelength (wavelength 400 nm) such as a blue-violet semiconductor laser element. An apparatus has been proposed (see, for example, Patent Documents 1 and 2).

  In Patent Document 1, a second light emitting element made of an AlGaAs semiconductor or an AlGaInP semiconductor is bonded to the upper surface of a first light emitting element made of a GaN (nitride) semiconductor via a fused metal layer. A semiconductor laser device is disclosed. In the semiconductor laser device disclosed in Patent Document 1, the surfaces of the light emitting element layers opposite to the substrates of the respective light emitting elements are bonded so as to face each other, thereby being bonded to the laser light emitting portion of the first light emitting element. The laser light emitting portions of the second light emitting element are arranged at a predetermined distance along the thickness direction of the element.

  Patent Document 2 discloses a semiconductor laser device in which a red semiconductor laser element and an infrared semiconductor laser element are bonded to the surface of a blue-violet semiconductor laser element. In the semiconductor laser device described in Patent Document 2, a red semiconductor laser element and an infrared semiconductor laser element are respectively formed on flat portions on both sides of a ridge portion formed at a substantially central portion in the width direction of the blue-violet semiconductor laser element. It is joined. It is to be noted that a red semiconductor laser element and an infrared semiconductor laser are connected to the laser emission part of the blue-violet semiconductor laser element by bonding the surfaces of the laser element layers opposite to the substrate of each laser element facing each other. The laser light emitting portions of the elements are arranged at a predetermined distance in the thickness direction of the laser element.

JP 2004-207480 A JP 2005-317919 A

  However, in the semiconductor laser device disclosed in Patent Document 1, since the surfaces of the light emitting element layers opposite to the substrates of the respective light emitting elements are bonded to face each other, the thickness of the first light emitting element is the second. There is a problem that the size (thickness) of the semiconductor laser device increases as the thickness of the light emitting element is added. Further, since the second light emitting element is bonded to the first light emitting element, for example, when the width of the first light emitting element is narrowed, the width of the second light emitting element bonded to the first light emitting element. Similarly, it is necessary to form narrowly. For this reason, there is a problem that wire bonding such as a metal wire to the light emitting element becomes difficult due to the narrow width of each light emitting element.

  Also in the semiconductor laser device disclosed in Patent Document 2, the surface of the laser element layer opposite to the substrate of each laser element is bonded so as to face each other, so that the thickness of the blue-violet semiconductor laser element is red. There is a problem that the size (thickness) of the semiconductor laser device increases as the thickness of the semiconductor laser element (or infrared semiconductor laser element) is added. Further, since a red semiconductor laser element (or an infrared semiconductor laser element) is bonded to a blue-violet semiconductor laser element, for example, when the width of the blue-violet semiconductor laser element is narrowed, the red semiconductor laser element (or infrared semiconductor) Similarly, the width of the laser element must be narrow. For this reason, there is a problem that wire bonding such as a metal wire to the laser element becomes difficult due to the narrow width of each laser element.

  The present invention has been made to solve the above-described problems, and one object of the present invention is to suppress an increase in the size (thickness) of the laser element, and It is an object of the present invention to provide a method of manufacturing a semiconductor laser device and a semiconductor laser device capable of easily performing wire bonding of a metal wire to a laser element.

Means for Solving the Problems and Effects of the Invention

  In order to achieve the above object, a method of manufacturing a semiconductor laser device according to a first aspect of the present invention includes a first semiconductor laser including a first surface and a second surface provided on the opposite side of the first surface. Forming a second semiconductor laser element including a step of forming an element, a third surface, and a fourth surface provided on the opposite side of the third surface; and forming the third surface on one surface of the support substrate. Joining the first surface to a second region other than the first region on one surface of the support substrate such that a portion of the first surface overlaps the front fourth surface after joining to the first region; Is provided.

  In the method of manufacturing the semiconductor laser device according to the first aspect of the present invention, as described above, after the third surface of the second semiconductor laser element is bonded to the first region on one surface of the support substrate, the first semiconductor laser is manufactured. A step of joining the first surface to a second region other than the first region on one surface of the support substrate so that a part of the first surface of the device overlaps the fourth surface of the second semiconductor laser device; Since the first semiconductor laser element and the second semiconductor laser element can be arranged side by side on one surface of the same support substrate, the first semiconductor laser element and the second semiconductor laser element are arranged in the thickness direction of the element. Unlike the case where the semiconductor laser device is configured by overlapping and joining, a semiconductor laser device in which an increase in the size (thickness) of the laser element is suppressed can be obtained. Further, when the first semiconductor laser element and the second semiconductor laser element are arranged side by side on one surface of the same support substrate, a part of the first surface of the first semiconductor laser element is Since the first semiconductor laser element is arranged so as to overlap the fourth surface, the width of the first semiconductor laser element is not excessively narrow, and the wire bond region for wire bonding the metal wire has an appropriate width. Can be secured. Thereby, a semiconductor laser device capable of easily performing wire bonding of a metal wire to the first semiconductor laser element can be obtained.

  In the method of manufacturing a semiconductor laser device according to the first aspect, preferably, the step of forming the second semiconductor laser element includes a step of forming a second semiconductor laser element including a third surface on the surface of the growth substrate. Prior to the step of bonding the first surface to the second region of the support substrate, the thickness of the second semiconductor laser device is reduced by removing at least a portion of the growth substrate in a region overlapping with the first semiconductor laser device. Thus, the method further includes the step of forming the fourth surface on the second semiconductor laser element. If comprised in this way, since the thickness (thickness from the 3rd surface to the 4th surface) of the laser element in the field which overlaps with a part of the 1st surface of the 1st semiconductor laser element of the 2nd semiconductor laser element becomes small, The first semiconductor laser element and the second semiconductor laser element are arranged on the same supporting substrate in a state where a part of the first surface of the first semiconductor laser element is easily overlapped with the fourth surface of the second semiconductor laser element. can do. Accordingly, the height from the support substrate to the active layer of the first semiconductor laser element and the height from the support substrate to the active layer of the second semiconductor laser element can be easily adjusted. A semiconductor laser device in which the light emission points are close to each other can be obtained. As a result, when this semiconductor laser device is applied to an optical disk pickup device, the light emitted from each semiconductor laser element is incident at substantially the same angle (vertical direction) with respect to the recording surface of the optical disk or DVD. Therefore, it is possible to suppress variation in the light spot quality of the semiconductor laser element in each recording medium.

  In the method of manufacturing the semiconductor laser device according to the first aspect, preferably, the second semiconductor laser element is made of a III-V group semiconductor that most contains phosphorus or arsenic as a group V element. As described above, when the second semiconductor laser element is made of a III-V group semiconductor containing the largest amount of phosphorus or arsenic as a group V element, the growth substrate having a low thermal conductivity such as a GaAs substrate is used. (2) After forming the semiconductor laser element, the laser element layer side opposite to the growth substrate having a low thermal conductivity is joined to the first region of the support substrate as the joining surface (third surface), and then the growth substrate. A step of removing is applied. As a result, a semiconductor laser device capable of easily dissipating the heat generated by the second semiconductor laser element to the outside through the support substrate by using a support substrate having a higher thermal conductivity than the growth substrate is obtained. Can do.

  A semiconductor laser device according to a second aspect of the present invention includes a first semiconductor laser element including a first surface and a second surface provided on the opposite side of the first surface, a third surface, and a third surface. And an integrated semiconductor laser element composed of the second semiconductor laser element and the third semiconductor laser element, and the first semiconductor laser element and the integrated semiconductor laser element are joined to each other. The first surface is on one surface of the support substrate such that the third surface is bonded to the first region on one surface of the support substrate, and a part of the first surface overlaps the fourth surface. The first region is joined to a second region other than the first region.

  As described above, the semiconductor laser device according to the second aspect of the present invention includes the support substrate to which the first semiconductor laser element and the integrated semiconductor laser element are bonded, and the first semiconductor laser element is the first semiconductor laser. The same support is achieved by bonding the first surface to a second region other than the first region on one surface of the support substrate such that a part of the first surface of the device overlaps the fourth surface of the integrated semiconductor laser device. Since the first semiconductor laser element and the integrated semiconductor laser element can be arranged side by side on one surface of the substrate, the first semiconductor laser element and the integrated semiconductor laser element are overlapped in the thickness direction of the element and bonded together. Unlike the case where the semiconductor laser device is configured, an increase in the size (thickness) of the laser element can be suppressed. Further, when the first semiconductor laser element and the integrated semiconductor laser element are arranged in the horizontal direction on one surface of the same support substrate, a part of the first surface of the first semiconductor laser element is made of the integrated semiconductor laser element. Since the first semiconductor laser element is arranged so as to overlap the fourth surface, the width of the first semiconductor laser element is not excessively narrowed, and a wire bond region for wire bonding can be appropriately secured. Thereby, wire bonding can be easily performed to the first semiconductor laser element.

  A semiconductor laser device according to a third aspect of the present invention includes a first semiconductor laser element including a first surface and a second surface provided on the opposite side of the first surface, a third surface, and a third surface. A third semiconductor laser element including a second semiconductor laser element including a fourth surface provided on the opposite side to the fifth surface, a fifth surface, and a sixth surface provided on the opposite side of the fifth surface; And a support substrate to which the first semiconductor laser element, the second semiconductor laser element, and the third semiconductor laser element are bonded. The third surface is bonded to the first region on one surface of the support substrate, and the fifth surface is The first semiconductor laser element is bonded to a third region on one surface of the support substrate, and the first surface of the first semiconductor laser element is one surface of the support substrate so that a part of the first surface overlaps each of the fourth surface and the sixth surface. Bonded to the second region other than the first region and the third region above, the first region and the third region Second region sandwiched between the frequency, the first surface being bonded.

  In the semiconductor laser device according to the third aspect of the present invention, as described above, the first semiconductor laser element includes the first semiconductor laser element, the second semiconductor laser element, and the support substrate to which the third semiconductor laser element is bonded. The first surface is on one surface of the support substrate so that a part of the first surface of the first semiconductor laser element overlaps each of the fourth surface of the second semiconductor laser element and the sixth surface of the third semiconductor laser element. By joining to the second region other than the first region and the third region, the first semiconductor laser element, the second semiconductor laser element, and the third semiconductor laser element are arranged side by side on one surface of the same supporting substrate. When the semiconductor laser device is configured by joining the first semiconductor laser element and the second semiconductor laser element or the third semiconductor laser element so as to overlap each other in the thickness direction of the element. Different, can be the size of the laser element (thickness) can be inhibited from increase. In addition, when the first semiconductor laser element, the second semiconductor laser element, and the third semiconductor laser element are arranged side by side on one surface of the same support substrate, a part of the first surface of the first semiconductor laser element is The first semiconductor laser element is not formed to be excessively narrow because the first semiconductor laser element is disposed so as to overlap the fourth surface of the second semiconductor laser element and the sixth surface of the third semiconductor laser element. A wire bond region for wire bonding can be appropriately secured. Thereby, wire bonding can be easily performed to the first semiconductor laser element.

  In the semiconductor laser device according to the second aspect or the third aspect, preferably, the second semiconductor laser element and the third semiconductor laser element are made of a III-V group semiconductor containing the largest amount of phosphorus or arsenic as a group V element. . Thus, when the second semiconductor laser element and the third semiconductor laser element are made of a group III-V semiconductor containing the largest amount of phosphorus or arsenic as a group V element, growth with a low thermal conductivity made of, for example, a GaAs substrate or the like. After the second semiconductor laser element and the third semiconductor laser element are formed using the substrate for bonding, the laser element layer side opposite to the growth substrate having low thermal conductivity is bonded to the first region of the support substrate. Then, a step of removing the growth substrate is applied. Accordingly, if a support substrate having a higher thermal conductivity than the growth substrate is used, the heat generated by the second semiconductor laser element and the third semiconductor laser element can be easily radiated to the outside through the support substrate.

It is sectional drawing for demonstrating the schematic structure of the semiconductor laser apparatus of this invention. It is sectional drawing for demonstrating the schematic manufacturing process of the semiconductor laser apparatus of this invention. It is sectional drawing for demonstrating the schematic manufacturing process of the semiconductor laser apparatus of this invention. It is sectional drawing for demonstrating the schematic manufacturing process of the semiconductor laser apparatus of this invention. It is sectional drawing for demonstrating the schematic manufacturing process of the semiconductor laser apparatus of this invention. It is sectional drawing for demonstrating the schematic manufacturing process of the semiconductor laser apparatus of this invention. It is sectional drawing which showed the structure of the semiconductor laser apparatus by 1st Embodiment of this invention. 1 is a top view showing a structure of a semiconductor laser device according to a first embodiment of the present invention. It is sectional drawing for demonstrating the manufacturing process of the semiconductor laser apparatus by 1st Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing process of the semiconductor laser apparatus by 1st Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing process of the semiconductor laser apparatus by 1st Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing process of the semiconductor laser apparatus by 1st Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing process of the semiconductor laser apparatus by 1st Embodiment of this invention. It is sectional drawing which showed the structure of the semiconductor laser apparatus by the 1st modification of 1st Embodiment of this invention. It is sectional drawing which showed the structure of the semiconductor laser apparatus by the 2nd modification of 1st Embodiment of this invention. It is the top view which showed the structure of the semiconductor laser apparatus by the 2nd modification of 1st Embodiment of this invention. It is sectional drawing which showed the structure of the semiconductor laser apparatus by 2nd Embodiment of this invention. It is the top view which showed the structure of the semiconductor laser apparatus by 2nd Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing process of the semiconductor laser apparatus by 2nd Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing process of the semiconductor laser apparatus by 2nd Embodiment of this invention. It is sectional drawing which showed the structure of the semiconductor laser apparatus by 3rd Embodiment of this invention. It is the top view which showed the structure of the semiconductor laser apparatus by 3rd Embodiment of this invention. It is sectional drawing which showed the structure of the semiconductor laser apparatus by 4th Embodiment of this invention. It is the top view which showed the structure of the semiconductor laser apparatus by 4th Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing process of the semiconductor laser apparatus by 4th Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing process of the semiconductor laser apparatus by 4th Embodiment of this invention. It is sectional drawing which showed the structure of the semiconductor laser apparatus by 5th Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing process of the semiconductor laser apparatus by 5th Embodiment of this invention. It is sectional drawing which showed the structure of the semiconductor laser apparatus by 6th Embodiment of this invention. It is sectional drawing which showed the structure of the semiconductor laser apparatus by 7th Embodiment of this invention. It is the schematic which showed the structure of the optical pick-up apparatus provided with the semiconductor laser apparatus by 8th Embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  First, with reference to FIG. 1, before explaining a specific embodiment of the present invention, a schematic structure of a semiconductor laser device 40 according to the present invention will be described.

  As shown in FIG. 1, the semiconductor laser device 40 of the present invention includes a support substrate 30, a first semiconductor laser element 10 bonded on the upper surface of the support substrate 30, and a lateral direction (B And a second semiconductor laser element 20 bonded on the surface of the support substrate 30 in a state adjacent to the direction). In the semiconductor laser device 40, the lower surface of the support substrate 30 is bonded to the upper surface of the base (submount) 31.

  The first semiconductor laser element 10 has a structure in which a first conductive semiconductor layer 1, an active layer 2, and a second conductive semiconductor layer 3 are sequentially stacked. The active layer 2 has a single layer, a single quantum well (SQW) structure, or a multiple quantum well (MQW) structure.

  The first conductivity type semiconductor layer 1 is composed of a first conductivity type cladding layer having a band gap larger than that of the active layer 2. Moreover, you may have the light guide layer which has the band gap between the 1st conductivity type semiconductor layer 1 and the active layer 2 in the active layer 2 side of the 1st conductivity type semiconductor layer 1. FIG. Further, a carrier block layer having a band gap larger than that of the first conductivity type semiconductor layer 1 may be provided between the first conductivity type semiconductor layer 1 and the active layer 2. Moreover, you may have a 1st conductivity type contact layer on the opposite side to the active layer 2 of the 1st conductivity type semiconductor layer 1. FIG.

  The second conductivity type semiconductor layer 3 is composed of a second conductivity type cladding layer having a band gap larger than that of the active layer 2. Further, an optical guide layer having a band gap between the second conductive semiconductor layer 3 and the active layer 2 may be provided on the active layer 2 side of the second conductive semiconductor layer 3. Further, a carrier block layer having a band gap larger than that of the second conductivity type semiconductor layer 3 may be provided between the second conductivity type semiconductor layer 3 and the active layer 2. Moreover, you may have a 2nd conductivity type contact layer in the opposite side to the active layer 2 of the 2nd conductivity type semiconductor layer 3. FIG. In this case, the second conductivity type contact layer preferably has a smaller band gap than the second conductivity type cladding layer.

  Each semiconductor layer (first conductive semiconductor layer 1, active layer 2 and second conductive semiconductor layer 3) is made of AlGaAs, GaInAs, AlGaInP, AlGaInNAs, AlGaSb, GaInAsP, or nitride semiconductor. MgZnSSe series, ZnO series and the like. As the nitride semiconductor, GaN, AlN, InN, BN, TlN, or a mixed crystal thereof can be used.

  Further, the substrate opposite to the active layer 2 of the first conductivity type semiconductor layer 1 may be a substrate. When each semiconductor layer is formed of a nitride semiconductor having a wurtzite structure, the substrate may be a first conductivity type nitride semiconductor substrate or a heterogeneous substrate. As the heterogeneous substrate, a first conductivity type α-SiC substrate having a hexagonal structure and a rhombohedral structure can be used. The first conductivity type semiconductor layer 1 may include a substrate. However, in order to obtain an AlGaInN semiconductor layer having the best crystallinity, it is most preferable to use a nitride semiconductor substrate.

  The plane orientation of the growth surface of the nitride-based semiconductor substrate is a nonpolar plane such as the (0001) plane and the (000-1) plane, the (11-20) plane and the (1-100) plane, or (11-22 ) Plane, (11-2-2) plane, (1-101) plane and (1-10-1) plane can be used.

  Further, a structure for confining the current flowing through the active layer 2 is formed in the vicinity of the active layer 2. In this example, an insulating film 4 having an opening 4 a is formed on the lower surface of the second conductivity type semiconductor layer 3. A second conductive side electrode 5 is formed on the lower surface of the second conductive semiconductor layer 3 and the lower surface of the insulating film 4 at the opening 4a.

  Further, the first semiconductor laser element 10 is formed with a protrusion 15 in which a part of the first conductivity type semiconductor layer 1 protrudes downward (C1 side) perpendicular to the substrate surface. On the lower surface of the conductive semiconductor layer 1, the layers from the active layer 2 to the second conductive side electrode 5 are formed. Here, the lower surface of the flat portion 1a of the first conductivity type semiconductor layer 1 and the lower surface of the second conductive side electrode 5 which are the lower surface (the surface on the C1 side) of the first semiconductor laser element 10 are the "first surface" of the present invention. The upper surface (surface on the C2 side) of the first conductivity type semiconductor layer 1 corresponds to the “second surface” of the present invention. In addition, a first conductive side electrode may be formed on the surface (upper surface) opposite to the active layer 2 of the first conductive type semiconductor layer 1.

  The second semiconductor laser element 20 has a structure in which a first conductive semiconductor layer 21, an active layer 22, and a second conductive semiconductor layer 23 are sequentially stacked. The active layer 22 has a single layer, an SQW structure, or an MQW structure.

  The first conductivity type semiconductor layer 21 is composed of a first conductivity type cladding layer having a band gap larger than that of the active layer 22. Further, a light guide layer having a band gap between the first conductive semiconductor layer 21 and the active layer 22 may be provided on the active layer 22 side of the first conductive semiconductor layer 21. Further, a carrier block layer having a band gap larger than that of the first conductivity type semiconductor layer 21 may be provided between the first conductivity type semiconductor layer 21 and the active layer 22. Moreover, you may have a 1st conductivity type contact layer in the opposite side to the active layer 22 of the 1st conductivity type semiconductor layer 21. FIG.

  The second conductivity type semiconductor layer 23 is composed of a second conductivity type cladding layer having a band gap larger than that of the active layer 22. Further, an optical guide layer having a band gap between the second conductive semiconductor layer 23 and the active layer 22 may be provided on the active layer 22 side of the second conductive semiconductor layer 23. Further, a carrier block layer having a band gap larger than that of the second conductivity type semiconductor layer 23 may be provided between the second conductivity type semiconductor layer 23 and the active layer 22. In addition, a second conductivity type contact layer may be provided on the opposite side of the second conductivity type semiconductor layer 23 from the active layer 22. In this case, the second conductivity type contact layer preferably has a smaller band gap than the second conductivity type cladding layer.

  Each semiconductor layer (first conductive type semiconductor layer 21, active layer 22 and second conductive type semiconductor layer 23) is made of AlGaAs, GaInAs, AlGaInP, AlGaInNAs, AlGaSb, GaInAsP, MgZnSSe, and ZnO. It consists of systems.

  The opposite side of the first conductive semiconductor layer 21 from the active layer 22 may be a substrate, or the first conductive semiconductor layer 21 may include a substrate.

  Further, a structure for confining the current flowing through the active layer 22 is formed in the vicinity of the active layer 22. In this example, an insulating film 24 having an opening 24 a is formed on the lower surface of the second conductivity type semiconductor layer 23. A second conductive side electrode 25 is formed on the lower surface of the second conductive semiconductor layer 23 and the lower surface of the insulating film 24 in the opening 24a. An electrode 16 is formed on the upper surface of the first conductivity type semiconductor layer 21.

  Here, in the present invention, as shown in FIG. 1, in the state where the lower surface of the second conductive side electrode 25 of the second semiconductor laser element 20 is bonded to the region 30 a of the support substrate 30, The lower surface of the second conductive side electrode 5 of the first semiconductor laser element 10 is bonded to the region 30 b of the support substrate 30 so that the lower surface of the flat portion 1 a overlaps the upper surface of the electrode 16 of the second semiconductor laser element 20. In addition, the lower surface of the second conductive side electrode 25 which becomes the lower surface (the C1 side surface) of the second semiconductor laser element 20 corresponds to the “third surface” of the present invention, and the upper surface of the electrode 16 corresponds to “ This corresponds to the “fourth surface”. The regions 30a and 30b are examples of the “first region” and the “second region” in the present invention, respectively.

In addition, a low-reflectivity dielectric multilayer film is formed on the cavity end face (light emitting surface) of the first semiconductor laser element 10 and the second semiconductor laser element 20 on the laser light emitting side. Further, a dielectric multilayer film having a high reflectivity is formed on the resonator end face (light reflecting surface) on the laser light reflecting side. Here, as the dielectric multilayer film, GaN, AlN, BN, Al ₂ O ₃ , SiO ₂ , ZrO ₂ , HfO ₂ , Ta ₂ O ₅ , Nb ₂ O ₅ , La ₂ O ₃ , SiN, AlON and MgF ₂ or a multilayer film made of Ti ₃ O ₅ , Nb ₂ O _3, or the like, which are materials having different mixing ratios.

  Here, the light emitting surface and the light reflecting surface described above are distinguished from the pair of resonator end surfaces formed in the semiconductor laser element by the magnitude relationship of the light intensity of the laser light emitted from each end surface. . That is, the light emitting surface having a relatively large light intensity emitted from the end surface is a light emitting surface, and the light intensity is relatively small.

  Further, as the support substrate 30, a conductive substrate may be used, or an insulating substrate may be used. Examples of the conductive substrate include a metal plate such as Cu-W, Al and Fe-Ni, single crystal n-type or p-type Si, n-type or p-type SiC, n-type or p-type. A semiconductor substrate such as GaAs and n-type ZnO, or a polycrystalline AlN substrate may be used. Further, a conductive resin film in which conductive fine particles such as metal are dispersed, a composite material of a metal and a metal oxide, or the like, or carbon composed of a graphite particle sintered body impregnated with a metal may be used. Alternatively, a metal composite material may be used. In the case of using a conductive substrate, an electrode may be formed on the surface (lower surface) of the substrate opposite to the semiconductor layer. As an insulating substrate, a semiconductor substrate such as single crystal insulating Si, insulating SiC, or insulating GaAs, an insulating polycrystalline AlN substrate, or a resin substrate may be used. Good.

  The base 31 can be made of a material having high thermal conductivity such as polycrystalline AlN, polycrystalline SiC, Si, diamond or the like. Here, the base 31 is thicker than the support substrate 30.

  Next, a schematic manufacturing process of the semiconductor laser device 40 of the present invention will be described with reference to FIGS.

  First, as shown in FIG. 2, a semiconductor element layer including a first conductive type semiconductor layer 21, an active layer 22, and a second conductive type semiconductor layer 23 is formed on the upper surface of a substrate 29, and a second conductive type semiconductor is formed. An insulating film 24 having an opening 24 a is formed on the surface of the layer 23. Then, by forming the second conductive side electrode 25 so as to cover the opening 24a and the insulating film 24 in the vicinity of the opening 24a, the second semiconductor laser element substrate 20a is manufactured. The substrate 29 is an example of the “growth substrate” in the present invention.

  Thereafter, as shown in FIG. 3, the wafers are bonded to each other with the surface (lower surface) of the second conductive side electrode 25 of the second semiconductor laser element substrate 20 a facing the support substrate 30. Subsequently, as shown in FIG. 3, the thickness of the substrate 29 is reduced by polishing or etching the substrate 29. For etching, wet etching, dry etching, or the like is used. The substrate 29 having a reduced thickness may be left on the surface of the first conductivity type semiconductor layer 21 or may be completely removed as shown in FIG.

  Thereafter, as shown in FIG. 4, the resonator is extended by removing a part of the second semiconductor laser element substrate 20a (in FIG. 4, only the semiconductor element layer) so that the opening 24a remains. The second semiconductor laser element 20 having a predetermined width is formed in a direction (B direction) substantially orthogonal to the direction (perpendicular to the paper surface) and the plane of the substrate 29 (see FIG. 3), and the removed semiconductor element layer The region 30b of the support substrate 30 is exposed from below. Here, unnecessary portions of the semiconductor element layer may be separated by scribing the second semiconductor laser element substrate 20a (see FIG. 3) along the resonator direction, and unnecessary by wet etching or dry etching. This part may be removed. The region 30a of the support substrate 30 corresponds to the “first region” of the present invention, and the region 30b corresponds to the “second region” of the present invention. Thereafter, the electrode 16 is formed on the surface of the first conductivity type semiconductor layer 21.

  On the other hand, as shown in FIG. 5, for the first semiconductor laser element 10, first, a semiconductor element layer including the first conductive type semiconductor layer 1, the active layer 2, and the second conductive type semiconductor layer 3 is formed. Further, the projection 15 including the active layer 2 is etched by etching from the second conductive type semiconductor layer 3 to the middle of the first conductive type semiconductor layer 1 by dry etching or the like while leaving the vicinity of the portion to be the opening 4a. Form. Thereafter, the insulating film 4 having the opening 4 a on the surface of the second conductivity type semiconductor layer 3 and covering both side surfaces of the protrusion 15 is formed. Then, by forming the second conductive side electrode 5 so as to cover the opening 4a and the insulating film 4 in the vicinity of the opening 4a, the first semiconductor laser element substrate 10a is manufactured.

  After that, as shown in FIG. 6, the upper surface of the second semiconductor laser element 20 (upper surface of the first conductive type semiconductor layer 21) and the electrode 16 are opposed to each other, and the region 30b and the protrusion 15 (second conductive side electrode). 5) are opposed to each other, and the wafers are bonded to each other.

  Thereafter, the wafer is cleaved in a bar shape so as to have a predetermined resonator length, and the resonator end faces of the first semiconductor laser element 10 and the second semiconductor laser element 20 are formed. Thereafter, a low-reflectance dielectric multilayer film is formed on the light emitting side resonator end faces of the first semiconductor laser element 10 and the second semiconductor laser element 20, and a high reflectivity dielectric is formed on the light reflecting side resonator end faces. A body multilayer film is formed. Finally, a plurality of chips of the semiconductor laser device 40 (see FIG. 1) are formed by dividing the bar along the resonator direction at the position of the element dividing line 45 in FIG.

  In the present invention, as described above, the first semiconductor laser element 10 is arranged such that the lower surface of the flat portion 1a of the first semiconductor laser element 10 overlaps the upper surface of the first conductive type semiconductor layer 21 of the second semiconductor laser element 20. Further, by bonding the lower surface of the second conductive side electrode 5 to the region 30 b of the support substrate 30, the first semiconductor laser element 10 and the second semiconductor laser element 20 are placed in the horizontal direction (B direction) on the same support substrate 30. Since the first semiconductor laser element 10 and the second semiconductor laser element 20 are overlapped and joined in the thickness direction of the element to form a semiconductor laser device, the size of the laser element (C (Thickness in the direction) can be suppressed from increasing. Further, when the first semiconductor laser element 10 and the second semiconductor laser element 20 are arranged side by side in the horizontal direction on the same support substrate 30, the lower surface of the flat portion 1 a of the first semiconductor laser element 10 is placed on the second semiconductor laser element 20. Since the first conductive laser layer 10 is disposed so as to overlap the upper surface of the first conductive semiconductor layer 21, the width of the first semiconductor laser element 10 (first conductive semiconductor layer 1) in the B direction is not excessively narrowed. A wire bond region (upper surface of the first conductivity type semiconductor layer 1) for wire bonding a metal wire can be secured with an appropriate width. Thereby, the wire bonding of the metal wire to the first semiconductor laser element 10 can be easily performed.

  Further, in the present invention, after the lower surface of the second conductive side electrode 25 is bonded to the region 30 a of the support substrate 30, before the second conductive side electrode 5 of the first semiconductor laser element 10 is bonded to the region 30 b of the support substrate 30. Further, by removing the substrate 29 in the region overlapping with the first semiconductor laser element 10 to reduce the thickness (height) of the second semiconductor laser element 20, the second semiconductor laser element 20 is changed to the first semiconductor laser element 10. By forming the upper surface of the first conductive type semiconductor layer 21 that overlaps the lower surface of the flat portion 1a, the thickness of the laser element in the region of the second semiconductor laser element 20 that overlaps the lower surface of the flat portion 1a of the first semiconductor laser element 10 As the (thickness from the lower surface of the second conductive side electrode 25 to the upper surface of the first conductive type semiconductor layer 21) becomes smaller, the lower surface of the flat portion 1a of the first semiconductor laser element 10 is moved to the second semiconductor laser. While easily superimposed on the upper surface of the first conductive type semiconductor layer 21 of the secondary 20 can be disposed between the first semiconductor laser element 10 and the second semiconductor laser element 20 to the same supporting substrate 30. Thereby, the height from the support substrate 30 to the active layer 2 of the first semiconductor laser element 10 and the height from the support substrate 30 to the active layer 22 of the second semiconductor laser element 20 can be easily adjusted. The semiconductor laser device 40 in which the laser beam emission points of the respective laser elements are close to each other can be obtained.

  In the present invention, by etching, a part of the semiconductor element layer is removed so that the opening 24a remains in the second semiconductor laser element substrate 20a bonded to the support substrate 30, and the removed semiconductor element layer is also removed. When the region 30b is exposed from the bottom, it is not necessary to provide a margin for element separation by scribing or dicing on the second semiconductor laser element substrate 20a, compared to the case where the same process is performed by scribing or dicing. Therefore, the emission point of the second semiconductor laser element 20 can be arranged closer to the first semiconductor laser element 10 as much as the width (B direction) of the second semiconductor laser element 20 can be reduced.

  In the present invention, the same process is performed by dicing or the like by forming the protrusion 15 protruding downward from the substrate surface on the first semiconductor laser element 10 (or the first semiconductor laser element substrate 10a) by etching. As compared with the first semiconductor laser element 10, it is not necessary to provide a cutting margin for dicing in the first semiconductor laser element 10 (or the first semiconductor laser element substrate 10a), so that the width of the first semiconductor laser element 10 can be reduced. Accordingly, the emission point of the first semiconductor laser element 10 can be arranged closer to the second semiconductor laser element 20. In particular, when the first semiconductor laser element 10 is made of a hexagonal nitride semiconductor, the cleavage plane and the element dividing plane are orthogonal to each other, and the element dividing plane cannot be formed by cleavage, so that the dividing plane is flat. The first semiconductor laser device 10 has to have a large margin for cutting.

  In the present invention, the first semiconductor laser element 10 is provided with a protrusion 15 protruding downward (C1 side) from the substrate surface, and the lower surface (second conductive layer) of the semiconductor element layer formed on the protrusion 15 is formed. By bonding the lower surface of the side electrode 5 to the region 30 b of the support substrate 30, the optical waveguide (laser light emission point) formed in the active layer 2 above the opening 4 a is brought closer to the upper surface of the support substrate 30. Thus, the first semiconductor laser element 10 can be arranged. That is, in FIG. 1, the height from the lower surface of the support substrate 30 to the active layer 22 of the second semiconductor laser element 20 and the height from the lower surface of the support substrate 30 to the active layer 2 of the first semiconductor laser element 10 are made closer to each other. Therefore, the laser beam emission points can be aligned in the horizontal direction. Further, since the distance between the support substrate 30 and the laser beam emission point (optical waveguide) of the first semiconductor laser element 10 is reduced, the heat radiation of the first semiconductor laser element 10 can be easily performed.

  Next, specific embodiments of the present invention will be described.

(First embodiment)
First, the structure of the semiconductor laser device 100 according to the first embodiment of the present invention will be described with reference to FIG. FIG. 7 shows a cross section taken along line 1000-1000 in FIG.

  As shown in FIG. 7, the semiconductor laser device 100 according to the first embodiment of the present invention has a blue-violet semiconductor laser element 50 having an oscillation wavelength of about 405 nm on the surface of a support substrate 101 made of insulating Si. A two-wavelength semiconductor laser element 60 in which a red semiconductor laser element 70 having an oscillation wavelength of about 650 nm and an infrared semiconductor laser element 80 having an oscillation wavelength of about 780 nm are monolithically formed are adjacent in the lateral direction (B direction). And have a joined structure. The blue-violet semiconductor laser element 50 is an example of the “first semiconductor laser element” in the present invention, and the two-wavelength semiconductor laser element 60 is an example of the “integrated semiconductor laser element” in the present invention. One of the red semiconductor laser element 70 and the infrared semiconductor laser element 80 is an example of the “second semiconductor laser element” in the present invention, and any one of the red semiconductor laser element 70 and the infrared semiconductor laser element 80 is used. The other is an example of the “third semiconductor laser element” in the present invention.

Further, the blue-violet semiconductor laser device 50 is formed on the lower surface of an n-type GaN substrate 51 having a width of about 100 μm (maximum width in the B direction) and a thickness of about 100 μm (maximum thickness in the C direction). _An n-type cladding layer 52 made of _0.05 Ga _0.95 N, an active layer 53 having an MQW structure in which quantum well layers made of InGaN with a high In composition and barrier layers made of InGaN with a low In composition are alternately stacked. , And a p-type cladding layer 54 made of Mg-doped p-type Al _0.05 Ga _0.95 N is formed. Here, the lower surface of the n-type GaN substrate 51 is formed to have a protrusion 51b having a width of about 70 μm protruding downward in the C1 direction and a flat portion 51a having a width of about 30 μm other than the protrusion 51b. A semiconductor element layer constituting the above-described laser element part is formed on the lower surface of the part 51b.

  Further, the p-type cladding layer 54 is positioned opposite to the two-wavelength semiconductor laser device 60 from the side surface on the B1 side of the projection 51b from the center of the projection 51b toward the two-wavelength semiconductor laser device 60 (B1 side). It has a convex part formed on the inner side by about 10 μm toward the side (B2 side) and a flat part extending on both sides (B direction) of the convex part. The p-type cladding layer 54 has a support portion 54a that protrudes downward at the end of the flat portion on the B2 side. In addition, a p-side ohmic electrode layer 55 including a Pd layer, a Pt layer, and an Au layer is formed on the convex portion of the p-type cladding layer 54 in order from the p-type cladding layer 54. A ridge 56 for forming an optical waveguide is formed by the convex portion of the p-type cladding layer 54 and the p-side ohmic electrode layer 55. The ridge 56 has a width of about 1.5 μm in the B direction and is formed so as to extend along the resonator direction (A direction in FIG. 8). Note that the thickness from the lower surface of the flat portion 51a to the top of the ridge 56 (the lower surface of the p-side ohmic electrode layer 55) is about 8 μm.

In addition, a current blocking layer 57 made of SiO ₂ is formed so as to cover the lower surface of the flat portion (including the support portion 54 a) of the p-type cladding layer 54 and the side surface of the ridge 56. A p-side pad electrode 58 made of an Au layer or the like is formed so as to cover the upper surfaces of the ridge 56 and the current blocking layer 57. Here, the lower surface of the p-side pad electrode 58 and the lower surface of the flat portion 51a (surface on the C1 side) correspond to the “first surface” of the present invention, and the upper surface of the n-type GaN substrate 51 (surface on the C2 side). This corresponds to the “second surface” of the present invention.

  An n-side electrode 59 made of a Pt layer, a Pd layer, and an Au layer is formed on the upper surface of the n-type GaN substrate 51 in order from the n-type GaN substrate 51. A pad electrode 91 extending in a strip shape along the resonator direction is formed on the surface of the flat portion 51a. Here, the pad electrode 91 is composed of a Pt layer, a Pd layer, and an Au layer in order from the n-type GaN substrate 51.

  Further, as shown in FIG. 7, the two-wavelength semiconductor laser element 60 has a red semiconductor laser element 70 having a width of about 30 μm on the B2 side and a width on the B1 side on the lower surface of the n-type contact layer 61 made of Si-doped GaAs. An infrared semiconductor laser element 80 of about 30 μm is formed with a recess 67a of about 5 μm therebetween, and has an element width (maximum width) of about 65 μm.

  The red semiconductor laser device 70 includes an n-type cladding layer 72 made of AlGaInP having a thickness of about 2.5 μm, a quantum well layer made of GaInP, and a barrier layer made of AlGaInP on the lower surface of the n-type contact layer 61. Are formed, and an active layer 73 having an MQW structure, and a p-type cladding layer 74 made of AlGaInP having a thickness of about 1 μm are formed.

  Further, the p-type cladding layer 74 is positioned slightly closer to the B2 side from the substantially central portion of the element (from the side surface of the red semiconductor laser element 70 on the blue-violet semiconductor laser element 50 side (B2 side) to the blue-violet semiconductor laser element 50. And a flat part extending on both sides (B direction) of the convex part. A ridge 75 for forming an optical waveguide is formed by the convex portion of the p-type cladding layer 74. The ridge 75 has a width of about 2 μm in the B direction and is formed so as to extend along the resonator direction (A direction in FIG. 8).

The current made of SiO ₂ covers the lower surface of the p-type cladding layer 74 other than the ridge 75, the side surface from the p-type cladding layer 74 to the n-type cladding layer 72, and a part of the lower surface of the n-type contact layer 61. A block layer 76 is formed. Further, a p-side pad in which a Cr layer having a thickness of about 10 nm and an Au layer having a thickness of about 2.2 μm are laminated so as to cover the lower surfaces of the ridge 75 (p-type cladding layer 74) and the current blocking layer 76. An electrode 77 is formed.

  The infrared semiconductor laser device 80 has an n-type cladding layer 82 made of AlGaAs having a thickness of about 2 μm, a quantum well layer made of AlGaAs having a low Al composition, and an Al composition on the lower surface of the n-type contact layer 61. An active layer 83 having an MQW structure in which barrier layers made of high AlGaAs are alternately stacked and a p-type cladding layer 84 made of AlGaAs having a thickness of about 1 μm are formed.

  Further, the p-type cladding layer 84 is formed at a position slightly shifted toward the B2 side from the substantially central portion of the element (a position on the inner side by about 10 μm from the side surface on the B2 side of the infrared semiconductor laser element 80 toward the B1 side). And a flat portion extending on both sides of the convex portion. A ridge 85 for forming an optical waveguide is formed by the convex portion of the p-type cladding layer 84. The ridge 85 has a width of about 3 μm in the B direction and is formed so as to extend along the resonator direction (A direction in FIG. 8).

  Further, the current blocking layer 76 is formed on the lower surface of the p-type cladding layer 84 other than the ridge 85, the side surface from the p-type cladding layer 84 to the n-type cladding layer 82, and a part of the side surface on the B2 side of the n-type contact layer 61. It is formed to cover. Further, a p-side pad in which a Cr layer having a thickness of about 10 nm and an Au layer having a thickness of about 2.2 μm are laminated so as to cover the lower surfaces of the ridge 85 (p-type cladding layer 84) and the current blocking layer 76. An electrode 87 is formed.

  Further, on the upper surface of the n-type contact layer 61, an n-side ohmic electrode 62 is formed in which an AuGe layer and an Ni layer are stacked in this order from the lower layer to the upper layer. An n-side pad electrode 63 made of an Au layer is formed on the upper surface of the n-side ohmic electrode 62.

  The thickness of the n-type contact layer 61 of the two-wavelength semiconductor laser element 60 is about 1 μm in the portion where the infrared semiconductor laser element 80 is formed, and is about 0.5 μm in the other portions. For this reason, the lower surfaces of the p-side pad electrodes 77 and 87 are formed so as to be substantially on the same plane. The thickness from the lower surface of the p-side pad electrodes 77 and 87 to the upper surface of the n-side pad electrode 63 is about 6 μm.

  Further, as shown in FIG. 8, the pad electrodes 92, 93, and 94 have a predetermined shape on the surface of the support substrate 101 having a substantially rectangular shape and a width in the B direction of about 300 μm as viewed in a plan view. Patterning. As shown in FIGS. 7 and 8, a pad electrode 92 is disposed at a position facing the p-side pad electrode 77 of the red semiconductor laser element 70 in the region 101 a of the support substrate 101 where the two-wavelength semiconductor laser element 60 is bonded. In addition, a pad electrode 93 is disposed at a position facing the p-side pad electrode 87 of the infrared semiconductor laser element 80. A pad electrode 94 is arranged at a position (region 101b) facing the p-side pad electrode 58 of the blue-violet semiconductor laser element 50 adjacent to the pad electrode 92 (B2 side). The regions 101a and 101b correspond to the “first region” and the “second region” of the present invention, respectively.

  Here, in the first embodiment, as shown in FIG. 7, the bottom surfaces of the p-side pad electrodes 77 and 87 are flat in a state where the lower surfaces of the p-side pad electrodes 77 and 87 are bonded to the pad electrodes 92 and 93 via the conductive adhesive layer 95, respectively. The lower surface of the p-side pad electrode 58 is bonded to the pad electrode 94 via the conductive adhesive layer 96 so that the portion 51 a overlaps the upper surface of the n-side pad electrode 63. At this time, the n-side pad electrode 63 and the pad electrode 91 are joined via the conductive adhesive layer 96. The lower surfaces of the p-side pad electrodes 77 and 87 correspond to the “third surface” of the present invention, and the upper surface of the n-side pad electrode 63 corresponds to the “fourth surface” of the present invention.

  Further, as shown in FIG. 8, the resonator length of the blue-violet semiconductor laser device 50 is shorter than the resonator length of the two-wavelength semiconductor laser device 60, and the blue-violet semiconductor laser device 50 and the two-wavelength semiconductor laser are formed. The light emitting side (A1 side) resonator end face of the element 60 is aligned on the same plane and joined to the support substrate 101. Here, the upper surface of the support substrate 101 is exposed with a width of about 120 μm on the B1 side of the two-wavelength semiconductor laser device 60, and the upper surface of the support substrate 101 with a width of about 40 μm is exposed on the B2 side of the blue-violet semiconductor laser device 50. Exposed.

  The conductive adhesive layer 95 is made of Au—Sn (Sn is about 20%) solder having a melting point of about 280 ° C. The conductive adhesive layer 96 is made of Au—Sn (Sn is about 90%) solder having a melting point of about 210 ° C.

  In addition, the semiconductor laser device 100 includes a pedestal 116, three lead terminals 111, 112, and 113 that are insulated from the pedestal 116 and pass through the bottom 114a, and another one that is electrically connected to the pedestal 116 and the bottom 114a. And a stem 114 provided with a lead terminal (not shown).

  Further, as shown in FIG. 7, the support substrate 101 is electrically connected to a base 115 made of a conductive material such as AlN through a conductive adhesive layer 97, and the lower surface of the base 115 is And fixed on the upper surface of the pedestal 116 (see FIG. 8) via a conductive adhesive layer (not shown).

  Further, as shown in FIG. 8, the blue-violet semiconductor laser element 50 is exposed from the blue-violet semiconductor laser element 50 and the support substrate 101 so as to be exposed from the blue-violet semiconductor laser element 50. The lead electrode 113 is connected to the lead terminal 113 through a metal wire 121 wire-bonded to the wire bond portion 94 a of the pad electrode 94 extending to the A2 side), and the n-side electrode 59 is connected to the base 115 through the metal wire 122. It is connected to an electrode layer 117 formed on the surface. Further, the red semiconductor laser element 70 has a pad electrode 92 extending so as to partially protrude from the red semiconductor laser element 70 and the support substrate 101 to the B2 side so as to be exposed from the red semiconductor laser element 70. The infrared semiconductor laser element 80 is connected to the lead terminal 111 through a metal wire 123 wire-bonded to the wire bond portion 92 a and the infrared semiconductor laser element 80 is exposed from the infrared semiconductor laser element 80. And the support substrate 101 are connected to the lead terminal 112 via a metal wire 124 wire-bonded to the wire bond portion 93a of the pad electrode 93 extending to the B1 side. Further, as shown in FIG. 7, the n-side pad electrode 63 is electrically connected to the pad electrode 91 through the conductive adhesive layer 96. Thereby, in the semiconductor laser device 100, the p-side pad electrodes (58, 77 and 87) are electrically connected to the lead terminals insulated from each other, and the n-side electrodes (59 and 63) are connected to the common negative terminal. It is configured in an electrically connected state (cathode common).

  A manufacturing process for the semiconductor laser device 100 according to the first embodiment is now described with reference to FIGS. FIG. 12 and FIG. 13 each show a state in the manufacturing process in a cross section taken along line 1000-1000 in FIG.

  In the manufacturing process of the semiconductor laser device 100 according to the first embodiment, first, as shown in FIG. 9, an n-type cladding layer is formed on the upper surface of the n-type GaN substrate 51 by using a metal organic vapor deposition (MOCVD) method. 52, an active layer 53 and a p-type cladding layer 54 are sequentially formed. Thereafter, etching by dry etching or the like is performed from the surface of the p-type cladding layer 54 toward the n-type GaN substrate 51, thereby leaving a semiconductor element layer for forming a laser element only on the protrusion 51b of the n-type GaN substrate 51. .

  Then, after forming the ridge 56 in the semiconductor element layer, the current blocking layer 57, the p-side ohmic electrode layer 55, and the p-side pad electrode 58 are formed. Further, a pad electrode 91 extending in a strip shape along the resonator direction of the blue-violet semiconductor laser device 50 is formed on the flat portion 51a of the n-type GaN substrate 51 by using a vacuum deposition method, thereby forming an n-side electrode. A wafer on which the blue-violet semiconductor laser element 50 except for 59 (see FIG. 7) is formed is manufactured.

  Thereafter, the lower surface of the n-type GaN substrate 51 is polished so that the n-type GaN substrate 51 has a predetermined thickness, and then an n-side electrode 59 is formed on the lower surface of the n-type GaN substrate 51 using a vacuum deposition method. . Then, the wafer is cleaved into a bar shape so as to have a predetermined resonator length to form a resonator end face of the blue-violet semiconductor laser device 50, and the bar is resonated at the position of the element dividing line 900 in FIG. A plurality of chips of the blue-violet semiconductor laser element 50 are formed by dividing the element along the direction of the device.

Next, as shown in FIG. 10, an etching stopper layer 66 made of Al _0.5 Ga _0.5 As having a thickness of about 0.1 μm and an n-type contact layer 61 are formed on the upper surface of the GaAs substrate 65. Laminate sequentially. Thereafter, a red semiconductor laser element 70 and an infrared semiconductor laser element 80 are formed on the upper surface of the n-type contact layer 61 so as to be spaced apart by about 5 μm, thereby producing a wafer of the two-wavelength semiconductor laser element 60. To do. The GaAs substrate 65 is an example of the “growth substrate” in the present invention.

  Specifically, an n-type cladding layer 82, an active layer 83, and a p-type cladding layer 84 to be the infrared semiconductor laser element 80 are sequentially formed on the upper surface of the n-type contact layer 61. Thereafter, a part from the p-type cladding layer 84 to the depth of the n-type contact layer 61 of about 0.5 μm is etched to expose a part of the n-type contact layer 61, and a part of the exposed part is An n-type clad layer 72, an active layer 73, and a p-type clad layer 74 to be the red semiconductor laser element 70 are sequentially formed, leaving the regions to be the recesses 67a and 67b. Thereafter, ridges 75 and 95 and a current blocking layer 76 are formed. Thereafter, the p-side pad electrode 77 is formed by vacuum deposition so as to cover the upper surfaces of the ridge 75 and the current blocking layer 76, and the p-side pad electrode 87 is covered so as to cover the upper surfaces of the ridge 85 and the current blocking layer 76. Form.

  Here, in the manufacturing process of the first embodiment, as shown in FIG. 11, by performing wet etching using an ammonia-based etchant, a predetermined surface 65a of the GaAs substrate 65 opposite to the n-type contact layer 61 is formed. A recess 65c having a side surface 65b is formed in this region. At this time, the etching stops at the interface between the etching stopper layer 66 and the n-type contact layer 61. Thereafter, the etching stopper layer 66 exposed at the bottom of the recess 65c is removed by wet etching with hydrofluoric acid or hydrochloric acid to expose the upper surface (bottom surface 65d) of the n-type contact layer 61. Thereafter, the n-side ohmic electrode 62 and the n-side pad electrode 63 are sequentially formed on the bottom surface 65d of the recess 65c by using a vacuum deposition method.

  Thereafter, in order to alloy the n-side ohmic electrode 62 and the n-type contact layer 61, heat treatment is performed in a nitrogen atmosphere.

  Then, as shown in FIG. 12, the support substrate 101 and the wafer on which the two-wavelength semiconductor laser element 60 is formed are bonded. At this time, the p-side pad electrode 77 and the pad electrode 92 are opposed to each other, and the p-side pad electrode 87 and the pad electrode 93 are opposed to each other through the conductive adhesive layer 95.

  Thereafter, as shown in FIG. 12, the GaAs substrate 65 (shown by a broken line) is completely removed by performing wet etching using an ammonia-based etchant. Further, all of the etching stopper layer 66 (see FIG. 11) is removed by wet etching with hydrofluoric acid or hydrochloric acid. As a result, only the n-side ohmic electrode 62 and the n-side pad electrode 63 are left on the n-type contact layer 61. Thereafter, as shown in FIG. 13, the n-type contact layer 61 in the region where the element structures of the red semiconductor laser device 70 and the infrared semiconductor laser device 80 are not formed (the region where the recess 67b is formed) is scribed or wet etched. A recess 68 having a width of about 235 μm for bonding the blue-violet semiconductor laser device 50 in a later step is formed above the pad electrode 94 by removing the surface by, for example. Thereby, the wafer is separated in the B direction, and a plurality of two-wavelength semiconductor laser elements 60 having a width of about 65 μm in the B direction are formed.

  Thereafter, the wafer is cleaved in a bar shape so as to have a predetermined resonator length, and the resonator end face of each semiconductor laser element is formed. Then, a low-reflectance dielectric multilayer film is formed on the light emitting side resonator end face, and a high-reflectivity dielectric multilayer film is formed on the light reflecting side resonator end face. After that, at the position of the element dividing line 910 in FIG. 13 (position where the width of the element dividing line 910 on the B1 side is about 115 μm and the width of the element dividing line 910 on the B2 side is about 125 μm), the bar is placed in the resonator direction. A plurality of chips of the two-wavelength semiconductor laser element 60 bonded to the support substrate 101 are formed by dividing the element along the line.

  Thereafter, as shown in FIG. 7, the blue-violet semiconductor laser device 50 is made conductive while the p-side pad electrode 58 and the pad electrode 94 are opposed to each other, and the pad electrode 91 and the n-side pad electrode 63 are opposed to each other. It is bonded to the two-wavelength semiconductor laser element 60 and the support substrate 101 through the adhesive layer 96. Here, since the melting point of the conductive adhesive layer 95 is higher than the melting point of the conductive adhesive layer 96, the conductive adhesive layer 95 is not dissolved when the blue-violet semiconductor laser element 50 is bonded to the support substrate 101. Therefore, in this step, there is no problem that the two-wavelength semiconductor laser element 60 is detached from the support substrate 101 or the bonding position of the two-wavelength semiconductor laser element 60 is shifted. Thereafter, the lower surface of the support substrate 101 is fixed to the upper surface of the electrode layer 117 formed on the surface of the conductive base 115 using the conductive adhesive layer 97.

  Finally, using a ceramic collet (not shown), the base 115 is fixed while being pressed against the base 116 via a conductive adhesive layer (not shown). Thus, the semiconductor laser device 100 (see FIG. 7) according to the first embodiment is formed.

  In the manufacturing process of the first embodiment, as described above, the GaAs substrate 65 is removed by etching to reduce the thickness of the two-wavelength semiconductor laser device 60, and then the bottom surface of the flat portion 51a is formed on the two-wavelength semiconductor laser device 60. By forming the upper surface of the overlapping n-side pad electrode 63, the n-type GaN substrate 51 and the n-type contact are formed from the n-side electrode 59 at a position where a part of the blue-violet semiconductor laser element 50 and the two-wavelength semiconductor laser element 60 overlap. Since the distance (thickness) reaching the active layers 73 and 83 via the layer 61 becomes smaller, the electric resistance can be easily reduced. As a result, since the operating voltage of the two-wavelength semiconductor laser element 60 is reduced, the heat generation of the semiconductor laser device 100 can be suppressed.

  In the first embodiment, the flat portion 51 a is also bonded on the upper surface of the n-side pad electrode 63, so that the junction of the blue-violet semiconductor laser device 50 and the two-wavelength semiconductor laser device 60 with respect to the support substrate 101 (total Each of the laser elements can be reliably fixed on the support substrate 101 by the increase of the four locations. At this time, the n-side pad electrode 63 in the two-wavelength semiconductor laser element 60 is electrically connected to the pad electrode 91 of the blue-violet semiconductor laser element 50 through the conductive adhesive layer 96, so that one By wire bonding only the metal wire 122 to the n-side electrode 59, the cathode common connection in the semiconductor laser device 100 can be easily realized.

  In the first embodiment, the metal wire 122 is wire-bonded to the n-side electrode 59 of the blue-violet semiconductor laser device 50 having a thickness larger than that of the two-wavelength semiconductor laser device 60, thereby increasing the thickness of the laser device. It can suppress that an element becomes easy to be damaged at the time of wire bonding.

  In the first embodiment, the two-wavelength semiconductor laser element 60 is formed by monolithically forming the red semiconductor laser element 70 and the infrared semiconductor laser element 80 made of a III-V group semiconductor containing the largest amount of phosphorus or arsenic as a group V element. Is configured. That is, after the red semiconductor laser element 70 and the infrared semiconductor laser element 80 are formed using the GaAs substrate 65 having low thermal conductivity, the laser element layer (p-side pad electrodes 77 and 87) on the opposite side to the GaAs substrate 65 is formed. A process of joining the region 101a of the support substrate 101 having a higher thermal conductivity than that of the GaAs substrate 65 by the junction down method with the side as a joining surface and then removing the GaAs substrate 65 is applied. As a result, the heat generated by the two-wavelength semiconductor laser element 60 can be easily radiated to the base 115 via the support substrate 101.

  In the first embodiment, the thickness (about 100 μm) of the blue-violet semiconductor laser element 50 is configured to be larger than the thickness (about 6 μm) of the two-wavelength semiconductor laser element 60, thereby reducing the thickness of the two-wavelength semiconductor laser element 60. The heat generated in the blue-violet semiconductor laser device 50 can be easily radiated to the outside via the. In particular, since the two-wavelength semiconductor laser element 60 is made of a group III-V semiconductor other than a nitride semiconductor and has a lower thermal conductivity than a nitride semiconductor, the above effect is remarkable.

  In the manufacturing process of the first embodiment, when the two-wavelength semiconductor laser device 60 is formed, the n-side ohmic electrode 62 and the n-side pad electrode 63 are formed on the n-type contact layer 61 after removing the GaAs substrate 65. By doing so, the distance (thickness) from the n-side pad electrode 63 to the active layers 73 and 83 can be reduced by removing the GaAs substrate 65, so that the n-side pad electrode 63 in the two-wavelength semiconductor laser device 60 and the active layer are activated. The electrical resistance between the layers 73 and 83 can be easily reduced. As a result, since the operating voltage of the two-wavelength semiconductor laser element 60 is reduced, the heat generation of the semiconductor laser device 100 can be suppressed.

  In the first embodiment, since the ridge 56 is formed at a position close to the two-wavelength semiconductor laser element 60 from the center of the protrusion 51b in the blue-violet semiconductor laser element 50, the blue-violet semiconductor laser element 50 The laser beam emission point can be made closer to the laser beam emission point of the two-wavelength semiconductor laser element 60 in the B1 direction to constitute the semiconductor laser device 100.

  In the first embodiment, the height of the protrusion 51 b in the blue-violet semiconductor laser device 50 is configured to be substantially the same as the thickness of the two-wavelength semiconductor laser device 60, so that the blue-violet color is projected from the lower surface of the support substrate 101. Since the height of the semiconductor laser element 50 to the active layer 53 and the height from the lower surface of the support substrate 101 to the active layers 73 and 83 of the two-wavelength semiconductor laser element 60 can be made close to each other, the laser light emission point can be set in the horizontal direction. Can be aligned.

  Further, in the first embodiment, the width of the blue-violet semiconductor laser device 50 (about 100 μm) is configured to be smaller than the width of the support substrate, so that the width of the blue-violet semiconductor laser device 50 can be reduced. In addition, the number of blue-violet semiconductor laser elements 50 per n-type GaN substrate 51 can be increased, and the manufacturing cost of the blue-violet semiconductor laser element 50 can be reduced. In particular, when the first semiconductor laser device of the present invention is a nitride semiconductor laser, the nitride semiconductor substrate is expensive, so the cost reduction effect is significant.

  Further, in the first embodiment, the blue-violet semiconductor laser device 50 is bonded to the support substrate 101 so that a part of the upper surface of the n-side pad electrode 63 of the two-wavelength semiconductor laser device 60 is exposed. Since the width of the blue-violet semiconductor laser element 50 can be reduced, the number of blue-violet semiconductor laser elements 50 per n-type GaN substrate 51 can be increased in the manufacturing process. The manufacturing cost of the element 50 can be reduced.

  In the first embodiment, the blue-violet semiconductor laser device 50 is disposed from the lower surface of the support substrate 101 by disposing the active layer 53 on the side (C1 side) bonded to the support substrate 101. The height from the lower surface of the support substrate 101 to the active layers 73 and 83 of the two-wavelength semiconductor laser device 60 can be made closer to each other.

  In the first embodiment, in the two-wavelength semiconductor laser element 60, the ridges 75 and 85 of the respective laser elements are formed at positions close to the blue-violet semiconductor laser element 50 side. The semiconductor laser device 100 can be configured by bringing each of the two laser beam emission points of the laser beam 60 close to the laser beam emission point of the blue-violet semiconductor laser element 50 in the B2 direction.

  In the first embodiment, the blue-violet semiconductor laser element 50 is configured to have the support portion 54a at the end (B2 side) opposite to the two-wavelength semiconductor laser element 60 of the protrusion 51b. When the blue-violet semiconductor laser element 50 is bonded to the pad electrode 94 of the support substrate 101, the blue-violet semiconductor laser element 50 can be easily prevented from being inclined and bonded by the support portion 54a.

  In the first embodiment, the resonator length of the blue-violet semiconductor laser device 50 is shortened by forming the resonator length of the blue-violet semiconductor laser device 50 smaller than the resonator length of the two-wavelength semiconductor laser device 60. The number of blue-violet semiconductor laser elements 50 per n-type GaN substrate 51 can be increased in the manufacturing process, and the manufacturing cost of the blue-violet semiconductor laser element 50 can be reduced. it can. In this case, the blue-violet semiconductor laser device 50 and the two-wavelength semiconductor laser device 60 can be easily increased in output.

  In the manufacturing process of the first embodiment, the melting point of the conductive adhesive layer 95 that joins the two-wavelength semiconductor laser element 60 is made higher than the melting point of the conductive adhesive layer 96 that joins the blue-violet semiconductor laser element 50. Thus, the conductive adhesive layer 95 is not dissolved when the blue-violet semiconductor laser device 50 is bonded to the support substrate 101. Therefore, in this step, it is possible to suppress the occurrence of a problem that the two-wavelength semiconductor laser element 60 is detached from the support substrate 101 or the bonding position of the two-wavelength semiconductor laser element 60 is shifted.

  In the manufacturing process of the first embodiment, when the two-wavelength semiconductor laser element 60 is formed, before the blue-violet semiconductor laser element 50 is bonded to the two-wavelength semiconductor laser element 60 (n-side pad electrode 63), the n-side By alloying the ohmic electrode 62 and the n-type contact layer 61 by heat treatment, heat treatment for alloying the n-side ohmic electrode 62 formed on the two-wavelength semiconductor laser device 60 before the bonding step in the manufacturing process ( A blue-violet semiconductor laser device 50 may be bonded to the heat-treated two-wavelength semiconductor laser device 60 after the alloying step under a temperature condition of about 500 ° C. is performed. That is, when the heat treatment is performed on the two-wavelength semiconductor laser device 60 after the blue-violet semiconductor laser device 50 is bonded to the two-wavelength semiconductor laser device 60 before the heat treatment, the processing temperature (about 500 ° C.) in the heat treatment step is set. In the above configuration, the two-wavelength semiconductor laser element 60 that has been heat-treated has a disadvantage that the ohmic characteristics are easily deteriorated by adversely affecting the p-side ohmic electrode layer 55 and the like formed in the blue-violet semiconductor laser element 50. On the other hand, by bonding the blue-violet semiconductor laser element 50, the electrode layers (p-side ohmic electrode layer 55 and n-side electrode 59) of the blue-violet semiconductor laser element 50 are not affected by the heat treatment (alloying). Thereby, it can suppress that the characteristic of the ohmic electrode layer of the blue-violet semiconductor laser element 50 deteriorates. Furthermore, by including the above-described steps, the metal layers that are multilayered are alloyed immediately after the formation of the n-side ohmic electrode 62 before bonding the blue-violet semiconductor laser device 50 to the two-wavelength semiconductor laser device 60. Therefore, the ohmic characteristics at the contact interface between the n-type contact layer 61 and the n-side ohmic electrode 62 can be improved.

  In the manufacturing process of the first embodiment, when the two-wavelength semiconductor laser device 60 is formed by the n-type contact layer 61 made of a group III-V semiconductor containing phosphorus or arsenic, the n-type contact layer 61 and the n-side ohmic electrode are formed. By alloying with 62, the ohmic characteristics between the n-type contact layer 61 and the n-side ohmic electrode 62 can be improved, and the contact resistance can be further reduced.

  In the manufacturing process of the first embodiment, when the etching stopper layer 66 is formed on the upper surface of the GaAs substrate 65 and then the semiconductor element layer to be a laser element is formed, the GaAs substrate 65 is removed by wet etching. Since the etching can be surely stopped at the interface between the etching stopper layer 66 and the n-type contact layer 61, it is possible to easily adjust the thickness of the two-wavelength semiconductor laser element 60 and to form the uniform thickness. it can.

  In the manufacturing process of the first embodiment, in the two-wavelength semiconductor laser device 60 in the wafer state bonded to the support substrate 101, after removing the GaAs substrate 65, the n-type contact in the region where the laser device structure is not formed. By removing the layer 61 and forming the recess 68 above the pad electrode 94 of the support substrate 101, the region 101b of the support substrate 101 can be easily exposed by the above process. Thereby, in the subsequent process, the blue-violet semiconductor laser element 50 can be easily bonded to the pad electrode 94 while being fitted into the recess 68. Further, when the two-wavelength semiconductor laser device 60 in the wafer state is cleaved in a bar shape, the portion of the semiconductor device layer to be cleaved is reduced, so that the cleavage can be easily performed, and the two-wavelength semiconductor laser device 60 has good flatness. A simple resonator surface can be formed. Further, when the two-wavelength semiconductor laser element 60 in the wafer state is divided, the element can be easily divided at the portion of the support substrate 101 having a small thickness.

  In the manufacturing process of the first embodiment, the two-wavelength semiconductor laser element 60 is bonded to the support substrate 101 on which the pad electrode 93 is formed, and then a recess 68 is formed above the wire bond portion 93 a of the pad electrode 93. By exposing the wire bond portion 93a, the metal wire 124 can be easily bonded to the wire bond portion 93a on the support substrate 101.

  Further, in the manufacturing process of the first embodiment, a blue-violet semiconductor laser device 50 that is pre-chiped is bonded to the two-wavelength semiconductor laser device 60 that is bonded to the support substrate 101, as shown in FIG. In addition, since the blue-violet semiconductor laser device 50 is made into chips, a large number of blue-violet semiconductor laser devices 50 can be secured on one wafer substrate (n-type GaN substrate 51).

  Further, in the manufacturing process of the first embodiment, the blue-violet semiconductor laser element 50 that is chipped in advance is bonded to the two-wavelength semiconductor laser element 60 that is chipped after being bonded to the support substrate 101. When the two-wavelength semiconductor laser element 60 in the wafer state is divided, the element can be easily divided at the portion of the support substrate 101 having a small thickness.

(First modification of the first embodiment)
A first modification of the first embodiment will be described with reference to FIG. In the first modification of the first embodiment, a case will be described in which a part of the GaAs substrate 65 is left in the chipped two-wavelength semiconductor laser element 60a unlike the first embodiment. In the figure, components similar to those in the first embodiment are denoted by the same reference numerals as those in the first embodiment. The two-wavelength semiconductor laser element 60a is an example of the “integrated semiconductor laser element” in the present invention.

  In the semiconductor laser device 100a according to the first modification of the first embodiment, as shown in FIG. 14, in the two-wavelength semiconductor laser element 60a, the upper surface of the n-type contact layer 61 in which the infrared semiconductor laser element 80 is formed below. An n-type ohmic electrode 62 and an n-side pad electrode 63 for conduction with the n-type GaN substrate 51 of the blue-violet semiconductor laser element 50 are formed on the n-type, and a red semiconductor laser element 70 is formed on the lower side. On the upper surface of the contact layer 61, the GaAs substrate 65 is left in a convex shape (trapezoidal shape) via an etching stopper layer 66. That is, the maximum thickness (C direction) of the two-wavelength semiconductor laser element 60a is increased by the amount of the GaAs substrate 65 remaining.

  The remaining configuration of the semiconductor laser apparatus 100a according to the first modification of the first embodiment is similar to that of the aforementioned first embodiment. Further, in the manufacturing process of the semiconductor laser device 100a according to the first modification of the first embodiment, when the concave portion 65c (see FIG. 14) is formed in the surface 65a of the GaAs substrate 65, the red semiconductor laser element 70 and the infrared are formed in the lower portion. Without removing all the GaAs substrate 65 in the region where the semiconductor laser element 80 is formed, only the GaAs substrate 65 in the region corresponding to the infrared semiconductor laser element 80 is removed to form a wafer of the two-wavelength semiconductor laser device 60a. Except for this point, the manufacturing process is substantially the same as that of the first embodiment.

  In the first modification of the first embodiment, as described above, since the GaAs substrate 65 is partially left in the two-wavelength semiconductor laser element 60a, the two-wavelength semiconductor laser element 60a is bonded in advance in the manufacturing process. When the blue-violet semiconductor laser device 50 is bonded to the support substrate 101, the two-wavelength semiconductor laser device 60a can be made difficult to be damaged by the pressing force accompanying the bonding.

(Second modification of the first embodiment)
A second modification of the first embodiment will be described with reference to FIGS. 15 and 16. In the second modification of the first embodiment, unlike the first embodiment, a two-wavelength semiconductor laser device 60 is provided on an n-type Si support substrate 130 having conductivity via an insulating film 131 made of SiO _2. The case where the pad electrodes 92 and 93 for bonding are formed will be described. FIG. 15 shows a cross section taken along the line 1100-1100 in FIG. In the drawing, the same reference numerals as those in the first embodiment are attached to the same components as those in the first embodiment. The Si support substrate 130 is an example of the “support substrate” in the present invention.

In the semiconductor laser device 100b according to the second modification of the first embodiment, as shown in FIG. 15, a blue-violet semiconductor laser element 50 and a two-wavelength semiconductor laser are formed on the surface of a conductive n-type Si support substrate 130. The element 60 is joined adjacent to each other. In addition, a pad electrode 194 that is electrically connected to the Si support substrate 130 is formed on the surface of the Si support substrate 130 in a region to which the blue-violet semiconductor laser device 50 is bonded, and a region to which the two-wavelength semiconductor laser device 60 is bonded. An insulating film 131 made of SiO ₂ is formed on the surface of the Si support substrate 130 for insulation from the pad electrodes 92 and 93. In addition, as shown in FIG. 16, the insulating film 131 is on the side (B2 side) of the two-wavelength semiconductor laser element 60 and covers the rear region (region on the A2 side) of the blue-violet semiconductor laser device 50. Is formed.

  Therefore, the p-side pad electrode 58 of the blue-violet semiconductor laser device 50 is wire-bonded to the electrode layer 118 via the lower pad electrode 194, the Si support substrate 130, and the electrode layer 118 formed on the base 135. The metal wire 121 is configured to be electrically connected to the lead terminal 113. At this time, the base 135 has insulating properties, and the electrode layer 118 and the base 116 (see FIG. 16) are not electrically connected. Further, the n-side electrode 59 of the blue-violet semiconductor laser device 50 is configured to be directly connected to the pedestal 116 via the metal wire 132.

  The remaining structure of the semiconductor laser device 100b according to the second modification of the first embodiment is similar to that of the aforementioned first embodiment. In addition, in the manufacturing process of the semiconductor laser device 100b according to the second modification of the first embodiment, instead of the support substrate 30, pad electrodes 92 and 93 that are insulated on a predetermined region via an insulating film 131, Except for the point that the two-wavelength semiconductor laser device 60 and the blue-violet semiconductor laser device 50 are joined in this order using the Si support substrate 130 on which the pad electrode 194 that is directly conducted is formed, the first embodiment described above. It is almost the same as the manufacturing process.

(Second Embodiment)
The second embodiment will be described with reference to FIGS. 7, 17, and 18. In the semiconductor laser device 200 according to the second embodiment, unlike the first embodiment, the blue-violet semiconductor laser element 250 is arranged at the approximate center in the width direction (B direction) of the semiconductor laser device 200, and a blue-violet semiconductor laser is used. A case where the red semiconductor laser element 270 and the infrared semiconductor laser element 280 separated from each other are arranged on both sides of the element 250 will be described. FIG. 17 shows a cross section taken along the line 2000-2000 in FIG. In the drawing, the same reference numerals as those in the first embodiment are attached to the same components as those in the first embodiment.

  As shown in FIG. 17, the semiconductor laser device 200 according to the second embodiment of the present invention has a red semiconductor laser element 270, a blue-violet semiconductor laser element 250, and an infrared semiconductor laser element 280 on the surface of the support substrate 101. Are arranged in the lateral direction at an interval of about 5 μm. The blue-violet semiconductor laser element 250 is an example of the “first semiconductor laser element” in the present invention. One of the red semiconductor laser element 270 and the infrared semiconductor laser element 280 is an example of the “second semiconductor laser element” in the present invention, and either the red semiconductor laser element 270 or the infrared semiconductor laser element 280 is used. The other is an example of the “third semiconductor laser element” in the present invention.

  Further, in the blue-violet semiconductor laser device 250, the lower surface in the substantially central region in the width direction of about 80 μm has the protrusions 251b with a width of about 20 μm protruding downward, and the protrusions 251b are flat with a width of about 30 μm on each side. It has parts 251a and 251c. A laser element structure similar to that of the first embodiment is formed below the protrusion 251b. In the second embodiment, the ridge 56 is formed at a substantially central position of the semiconductor element layer, and the support portion 54a (see FIG. 7) shown in the first embodiment is provided in the p-type cladding layer. Not formed. Also, pad electrodes 291a and 291b extending in a strip shape along the resonator direction (A direction) of the blue-violet semiconductor laser element 250 are formed on the flat portions 251a and 251c, respectively.

  As shown in FIG. 18, pad electrodes 292, 293, and 294 are patterned and formed in a predetermined planar shape on the surface of the support substrate 101 having a substantially rectangular shape when viewed in a plan view. Specifically, a pad electrode 292 is disposed at a position facing the p-side pad electrode 77 on the support substrate 101, and a pad electrode 293 is disposed at a position facing the p-side pad electrode 87. The pad electrode 294 is disposed in a region sandwiched between the pad electrodes 292 and 293 in the B direction and facing the p-side pad electrode 58. In FIG. 17, a region 101 c (a region where the pad electrode 292 is disposed) of the support substrate 101 to which the red semiconductor laser element 270 is bonded corresponds to the “first region” of the present invention and is infrared. A region 101d (region where the pad electrode 293 is disposed) to which the semiconductor laser element 280 is bonded corresponds to the “third region” of the present invention. Further, the region 101e (region where the pad electrode 294 is disposed) to which the blue-violet semiconductor laser element 250 is bonded corresponds to the “second region” of the present invention.

  Accordingly, in the second embodiment, as shown in FIG. 17, the blue-violet semiconductor laser element 250 is bonded at the approximate center in the width direction of the support substrate 101, and the B2 side and B1 on both sides of the blue-violet semiconductor laser element 250 are joined. The red semiconductor laser element 270 and the infrared semiconductor laser element 280 are respectively joined to the sides. Here, the red semiconductor laser element 270 has an element width of about 40 μm, and the ridge 75 is positioned about 10 μm inward from the side surface on the blue-violet semiconductor laser element 250 side (B1 side) toward the B2 side. Is formed. The infrared semiconductor laser element 280 has an element width of about 40 μm, and the ridge 85 is positioned about 10 μm inward from the side surface on the blue-violet semiconductor laser element 250 side (B2 side) toward the B1 side. Is formed. Therefore, the light emitting portions of the left and right laser elements are arranged so as to approach the light emitting portions of the central laser element.

  In the second embodiment, the flat portion 251a (pad electrode) of the blue-violet semiconductor laser element 250 is obtained in a state where the lower surface of the p-side pad electrode 77 of the red semiconductor laser element 270 is bonded to the pad electrode 292 of the support substrate 101. The lower surface of 291a overlaps the upper surface (surface on the C2 side) of the n-side pad electrode 63 of the red semiconductor laser device 270, and the lower surface of the p-side pad electrode 87 of the infrared semiconductor laser device 280 is the pad of the support substrate 101. The p-side pad electrode 58 so that the flat portion 251c (the lower surface of the pad electrode 291b) overlaps the upper surface (the C2 side surface) of the n-side pad electrode 63 of the infrared semiconductor laser element 280 in a state of being bonded to the electrode 293. Is bonded to the pad electrode 294 of the support substrate 101. The lower surface (C1 side surface) of the p-side pad electrode 77 in the red semiconductor laser element 270 and the lower surface (C1 side surface) of the p-side pad electrode 87 in the infrared semiconductor laser element 280 are the “third” in the present invention. The upper surface (surface on the C2 side) of the n-side pad electrode 63 of each laser element corresponds to the “fourth surface” of the present invention.

  Further, as shown in FIG. 18, the resonator length of the blue-violet semiconductor laser element 250 is shorter than the resonator lengths of the red semiconductor laser element 270 and the infrared semiconductor laser element 280, and the three semiconductor laser elements (250, 270 and 280) have the light emitting side (A1 side) resonator end faces aligned on the same plane and bonded to the support substrate 101.

  Further, as shown in FIG. 18, the blue-violet semiconductor laser element 250 has a pad electrode extending from the blue-violet semiconductor laser element 250 and the support substrate 101 to the A2 side so as to be exposed from the blue-violet semiconductor laser element 250. The lead wire 111 is connected to the lead terminal 111 via the metal wire 201 wire-bonded to the wire bond portion 294 a of 294, and the n-side electrode 59 is connected to the base 116 via the metal wire 202. The red semiconductor laser element 270 is connected to the lead terminal 113 via the metal wire 203 wire-bonded to the wire bond portion 292a of the pad electrode 292 extending to the side (B2 side), and the infrared semiconductor laser. The element 280 is connected to the lead terminal 112 via a metal wire 204 wire-bonded to a wire bond portion 293a of a pad electrode 293 extending to the side (B1 side). In addition, the n-side pad electrode 63 of each of the red semiconductor laser element 270 and the infrared semiconductor laser element 280 is electrically connected to each of the pad electrodes 291a and 291b of the blue-violet semiconductor laser element 250 through the conductive adhesive layer 96. It is connected. Thereby, in the semiconductor laser device 200, the p-side pad electrodes (58, 77 and 87) of the respective semiconductor laser elements are electrically connected to the lead terminals insulated from each other, and the n-side electrodes (59 and 63) are connected. It is configured to be electrically connected to a common negative terminal (cathode common).

  A manufacturing process for the semiconductor laser device 200 according to the second embodiment is now described with reference to FIGS. 19 and 20 each show a state in the manufacturing process in a cross section taken along the line 2000-2000 in FIG.

  In the manufacturing process of the semiconductor laser device 200 according to the second embodiment, the wafer of the two-wavelength semiconductor laser element 295 formed by using the same manufacturing process as in the first embodiment is bonded to the support substrate 101 shown in FIG. After that, the n-side ohmic electrode 62 and the pad electrode 63 are formed on the bottom surface 295d of the concave portion 295c other than the region facing the concave portion 67a by using a vacuum deposition method. Thereby, the n-side ohmic electrode 62 and the pad electrode 63 corresponding to each of the red semiconductor laser element 270 and the infrared semiconductor laser element 280 are formed. Thereafter, all the GaAs substrate 65 is removed, and further, as shown in FIG. 20, the n-type contact layer 61 in the region where the laser element structure is not formed (the region where the recesses 67a and 67b are formed) is scribed or wet etched. Remove by etc. As a result, the red semiconductor laser element 270 and the infrared semiconductor laser element 280 are completely separated in the B direction.

  Thereafter, the wafer is cleaved in a bar shape so as to have a predetermined resonator length, and the resonator end face of each semiconductor laser element is formed. After that, the bar is divided into elements along the resonator direction at the position of the element dividing line 920 in FIG. 20, thereby having a recess 210 for joining the blue-violet semiconductor laser element 250 in the central region and B2 of the recess 210. A plurality of chips of the support substrate 101 on which the red semiconductor laser element 270 and the infrared semiconductor laser element 280 are respectively arranged on the B1 side and the B1 side are formed.

  Thereafter, as shown in FIG. 17, the chipped blue-violet semiconductor laser element 250 is bonded to the support substrate 101. That is, the p-side pad electrode 58 and the pad electrode 294 are made to face each other, and the pad electrodes 291a and 291b are made to face the n-side pad electrode 63 of each of the red semiconductor laser element 270 and the infrared semiconductor laser element 280 that face each other. Then, bonding is performed via the conductive adhesive layer 96. At this time, as shown in FIG. 18, the cavity end face on the light emitting side of the blue-violet semiconductor laser element 250 is the same as the cavity end face on the light emitting side of the red semiconductor laser element 270 and the infrared semiconductor laser element 280. Join to align on the surface.

  The other manufacturing processes of the semiconductor laser device 200 according to the second embodiment are the same as those in the first embodiment.

  In the second embodiment, as described above, the flat portions 251a and 251c are bonded to the upper surface of the n-side pad electrode 63 of each of the red semiconductor laser element 270 and the infrared semiconductor laser element 280. Each of the laser elements can be reliably fixed on the support substrate 101 as the number of junctions (a total of five) of the blue-violet semiconductor laser element 250, the red semiconductor laser element 270, and the infrared semiconductor laser element 280 increases. The remaining effects of the second embodiment are similar to those of the aforementioned first embodiment.

(Third embodiment)
A third embodiment will be described with reference to FIGS. 21 and 22. In the semiconductor laser device 300 according to the third embodiment, unlike the first embodiment, three vias 301, 302, and 303 filled with AuSn are formed in the insulating support substrate 101. explain. FIG. 21 shows a cross section taken along the line 3000-3000 in FIG. In the drawing, the same reference numerals as those in the first embodiment are attached to the same components as those in the first embodiment.

  As shown in FIG. 21, a semiconductor laser device 300 according to the third embodiment of the present invention has a blue-violet semiconductor laser element 50 and a two-wavelength semiconductor laser element on the surface of a support substrate 101, as in the first embodiment. 60 are joined adjacent to each other.

  Here, in the third embodiment, vias 301, 302, and 303 that are conductive regions filled with AuSn are formed in the support substrate 101. In FIG. 21, all the cross-sectional shapes of the vias 301 to 303 are shown for convenience, but in reality, they are formed at positions as shown in FIG. 22. Specifically, the via 302 is formed at a position closer to the light emitting surface side (A1 side) along the ridge 85 of the infrared semiconductor laser element 80. Further, the via 303 is formed at substantially the same position as the via 302 in the A direction below the blue-violet semiconductor laser device 50. The via 301 is disposed between the vias 302 and 303 with respect to the B direction, and is formed at a position closer to the light emitting surface along the ridge 75 of the red semiconductor laser element 70 (on the A2 side). That is, in the A direction from the end surface on the emission surface side of the support substrate 101 to the center position of the via 301, the distance along the A direction from the end surface on the emission surface side of the support substrate 101 to the center position of the vias 302 and 303. It is comprised so that the distance along along may become long.

  The vias 301, 302, and 303 penetrate through the support substrate 101 in the thickness direction (C direction) in a state where the vias are connected to the respective pad electrodes in the regions where the pad electrodes 92, 93, and 94 are formed. It is formed with a thickness of about 25 μm. Further, pad electrodes 304, 305, and 306 are respectively formed on the lower surface (back surface) of the support substrate 101 so as to be electrically connected to the vias 301, 302, and 303 exposed on the lower surface.

  In the third embodiment, lead electrodes 311, 312, and 313 are formed on the surface of the base 315 having an insulating property such as AlN so as to be insulated via the insulating film 316. Further, as shown in FIG. 22, the extraction electrode 311 extends in a strip shape along the resonator direction of the red semiconductor laser element 70, and a wire bond portion 311a provided at an end portion on the A2 side has a base 315 ( The insulating film 316) and the support substrate 101 are exposed so as to extend to the A2 side. In addition, the extraction electrode 312 extends in a strip shape along the resonator direction of the infrared semiconductor laser element 80, and the wire bond portion 312a provided at the end on the B1 side supports the base 315 (insulating film 316). It is exposed so as to extend to the B1 side from between the substrate 101. The lead electrode 313 is disposed under the blue-violet semiconductor laser device 50, and a wire bond portion 313a provided at an end portion on the B2 side is provided between the base 315 (insulating film 316) and the support substrate 101. It is exposed to extend to the B2 side. Then, on the back surface (lower surface) side of the support substrate 101, the pad electrode 304 and the extraction electrode 311, the pad electrode 305 and the extraction electrode 312, and the pad electrode 306 and the extraction electrode 313 are respectively interposed via the conductive adhesive layer 97. It is joined to the base 315 side.

  Thus, the blue-violet semiconductor laser device 50 is configured such that the p-side pad electrode 58 is electrically connected to the extraction electrode 313 through the pad electrode 94, the via 303, and the pad electrode 306. In the red semiconductor laser element 70 in the two-wavelength semiconductor laser element 60, the p-side pad electrode 77 is electrically connected to the extraction electrode 311 through the pad electrode 92, the via 301 and the pad electrode 304, and the infrared semiconductor laser element. 80, the p-side pad electrode 87 is electrically connected to the extraction electrode 312 via the pad electrode 93, the via 302, and the pad electrode 305.

  Therefore, as shown in FIG. 22, the blue-violet semiconductor laser device 50 is connected to the lead terminal 113 via the metal wire 321 wire-bonded to the wire bond portion 313a of the extraction electrode 313, and the n-side electrode 59 is , Directly connected to the pedestal 116 via a metal wire 322. The red semiconductor laser element 70 in the two-wavelength semiconductor laser element 60 is connected to the lead terminal 111 through a metal wire 323 wire-bonded to the wire bond portion 311a of the extraction electrode 311 and the infrared semiconductor laser element 80. Is connected to the lead terminal 112 through a metal wire 324 wire-bonded to the wire bond portion 312a of the extraction electrode 312.

  The remaining configuration of the semiconductor laser apparatus 300 according to the third embodiment is similar to that of the aforementioned first embodiment. Further, in the manufacturing process of the semiconductor laser device 300 according to the third embodiment, after the vias 301 to 303 are formed so as to have a positional relationship shifted from each other along the resonator direction of the laser elements bonded to the support substrate 101. The pad electrodes 92 to 94 and the pad electrodes 304 to 306 are formed on the upper surface and the lower surface of the support substrate 101, respectively, and then the two-wavelength semiconductor laser device 60 and the blue-violet semiconductor laser are used by using the support substrate 101. Except for the point that the elements 50 are joined in this order, the manufacturing process is substantially the same as that of the first embodiment.

  In the third embodiment, as described above, the vias 301 to 303 are formed in the support substrate 101, and the extraction electrodes 311 to 111 correspond to the pad electrodes 304 to 306 formed on the lower surface of the support substrate 101. By providing 313, each of the metal wires 321, 323, and 324 can be wire-bonded away from the position where the semiconductor laser element is bonded, so that damage to the laser element during wire bonding can be suppressed. it can.

  In the third embodiment, the distance along the resonator direction from the center position of one of the plurality of vias to the end surface on the emission surface side of the support substrate 101 is at least the other of the plurality of vias. Since the distance from the center position of one via to the end face on the emission surface side of the support substrate 101 is different from the distance along the resonator direction, the width of the support substrate 101 in the B direction is narrow. A plurality of vias can be efficiently provided in the support substrate 101 while increasing the diameter of each via.

  Further, in the third embodiment, the via 301 at a position sandwiched with respect to the B direction with respect to the vias 302 and 303 is formed to be shifted in the resonator direction, so that the width of the support substrate 101 in the B direction is narrow. Even in this case, a plurality of vias can be provided in the support substrate 101 more efficiently while increasing the diameter of each via.

  Further, in the third embodiment, the extraction electrode 311 sandwiched between the extraction electrodes 312 and 313 is formed in a strip shape along the resonator direction of the red semiconductor laser element 70, and the light emission surface side (A1 side) and Is a case where the width of the support substrate 101 is narrow by configuring the wire bond portion 311a provided at the end on the opposite A2 side so as to be exposed from between the base 315 and the support substrate 101. In addition, the extraction electrodes 311 to 313 can be efficiently arranged on the base 315, and the metal wire 323 can be easily wired to the wire bond portion 311a exposed between the base 315 and the support substrate 101. Can be bonded. The remaining effects of the third embodiment are similar to those of the aforementioned first embodiment.

(Fourth embodiment)
The fourth embodiment will be described with reference to FIGS. 23 to 26. In the semiconductor laser device 400 according to the fourth embodiment, unlike the manufacturing process of the third embodiment, the wafer-state blue-violet semiconductor laser is applied to the wafer-state support substrate 101 to which the two-wavelength semiconductor laser element 60 is bonded. A description will be given of a case where, after the element 450 is bonded, two bonded wafers are simultaneously cleaved, and then the element is divided at the same time to form the semiconductor laser device 400. 23, 25, and 26 show cross sections taken along the line 4000-4000 in FIG. In the figure, the same components as those in the third embodiment are denoted by the same reference numerals as those in the third embodiment. The blue-violet semiconductor laser element 450 is an example of the “first semiconductor laser element” in the present invention.

  As shown in FIG. 23, the semiconductor laser device 400 according to the fourth embodiment of the present invention has a blue-violet color on the surface of the support substrate 101 on which the vias 301, 302, and 303 are formed, as in the third embodiment. The semiconductor laser element 450 and the two-wavelength semiconductor laser element 60 are joined adjacent to each other.

  Here, in the fourth embodiment, as shown in FIGS. 23 and 24, the flat portion 51a on the two-wavelength semiconductor laser device 60 side (B1 side) of the n-type GaN substrate 51 of the blue-violet semiconductor laser device 450 is 2 The wavelength semiconductor laser device 60 is configured to overlap with substantially the entire region of the upper surface (the upper surface of the n-side pad electrode 63). That is, the blue-violet semiconductor laser element 450 is bonded to the upper surface of the two-wavelength semiconductor laser element 60 in a state having a larger bonding area than the blue-violet semiconductor laser element 50 of the third embodiment. In FIG. 24, the outer shape of the two-wavelength semiconductor laser element 60 hidden under the n-type GaN substrate 51 is indicated by a broken line. As shown in FIGS. 23 and 24, the arrangement and shape of the vias are the same as those in the third embodiment.

  Further, in the manufacturing process of the semiconductor laser device 400 according to the fourth embodiment, first, as shown in FIG. 25, a support in which vias 301 to 303, pad electrodes 92 to 94, and pad electrodes 304 to 306 are formed in advance. On the surface of the substrate 101, a wafer is prepared in which the two-wavelength semiconductor laser element 60 is bonded via the conductive adhesive layer 95. Then, as shown in FIG. 26, the blue-violet semiconductor laser element 450 in the wafer state is electrically conductive to the support substrate 101 so that the pad electrode 94 and the n-side pad electrode 63 are bonded to the pad electrode 58 and the pad electrode 91, respectively. After bonding using the conductive adhesive layer 96, the wafer-state support substrate 101 and the wafer-state blue-violet semiconductor laser element 450 are both cleaved into a bar shape to form resonator end faces of the respective semiconductor laser elements. Thereafter, the bar is divided into elements along the resonator direction at the position of the element dividing line 940, thereby forming a plurality of chips of the semiconductor laser device 400. The remaining manufacturing process of the semiconductor laser apparatus 400 according to the fourth embodiment is substantially the same as that of the third embodiment.

  In the manufacturing process of the fourth embodiment, as described above, after bonding the wafer on which the two-wavelength semiconductor laser element 60 is bonded and the wafer on which the blue-violet semiconductor laser element 450 is formed, each semiconductor laser is cleaved at the same time. By forming the resonator end face of the element, the position of the resonator end face of each semiconductor laser element can be easily matched to form the semiconductor laser device 400. The remaining effects of the fourth embodiment are similar to those of the aforementioned third embodiment.

(Fifth embodiment)
A fifth embodiment will be described with reference to FIGS. 27 and 28. In the semiconductor laser device 500 according to the fifth embodiment, unlike the fourth embodiment, the blue-violet semiconductor laser element 550 is disposed at substantially the center of the semiconductor laser device 500, and both sides of the blue-violet semiconductor laser element 550 are mutually connected. A case where the separated red semiconductor laser element 270 and infrared semiconductor laser element 280 are arranged will be described. The blue-violet semiconductor laser element 550 is an example of the “first semiconductor laser element” in the present invention.

  As shown in FIG. 27, the semiconductor laser device 500 according to the fifth embodiment of the present invention has the same arrangement relationship as that of the second embodiment on the surface of the support substrate 101 on which the vias 301, 302, and 303 are formed. As shown, the blue-violet semiconductor laser element 550 and the red semiconductor laser element 270 and the infrared semiconductor laser element 280 are bonded to the B2 side and the B1 side of the blue-violet semiconductor laser element 550, respectively.

  That is, in the manufacturing process of the semiconductor laser device 500 according to the fifth embodiment, as shown in FIG. 28, the support substrate 101 in which the vias 301 to 303, the pad electrodes 292 to 294, and the pad electrodes 304 to 306 are formed in advance. A wafer in which the red semiconductor laser element 270 and the infrared semiconductor laser element 280 are bonded via the conductive adhesive layer 95 is prepared using the same manufacturing process as in the second embodiment. At this time, regarding the planar arrangement relationship of the vias 301 to 303 formed in the support substrate 101, the via 301 for the red semiconductor laser element 270 and the via 302 for the infrared semiconductor laser element 280 are on the light emitting surface side. Of the support substrate 101 (the front side in FIG. 27), and the via 301 for the blue-violet semiconductor laser element 550 is closer to the opposite side of the light emitting surface side (the back side of the paper). ~ 303 are formed. The planar arrangement relationship of the extraction electrodes 311 to 313 formed on the base 315 via the insulating film 316 is formed in substantially the same manner as in the fourth embodiment (see FIG. 24). However, in this case, the lead electrode 313 disposed in the lower part of the blue-violet semiconductor laser element 550 is formed in a strip shape, and the wire bond portion provided on the side opposite to the light emitting surface has the base 315 and the support substrate 101. Be sure to expose from between. The lead electrodes 311 and 312 are exposed from the side of the support substrate 101 (B2 side and B1 side) to form a wire bond portion.

  The pad electrode 294, the n-side pad electrode 63 of the red semiconductor laser element 270, and the n-side pad electrode 63 of the infrared semiconductor laser element 280 are bonded to the pad electrode 58 and the pad electrodes 291a and 291b, respectively. After bonding the wafer-state blue-violet semiconductor laser element 550 to the support substrate 101 using the conductive adhesive layer 96, the wafer-state support substrate 101 and the wafer-state blue-violet semiconductor laser element 550 are both cleaved into a bar shape. Thus, the cavity end face of each semiconductor laser element is formed. After that, at the position of the element dividing line 950, the bar is divided into elements along the resonator direction to form a plurality of chips of the semiconductor laser device 500. Other manufacturing processes of the semiconductor laser device 500 in the fifth embodiment are the same as those in the fourth embodiment. The effects of the fifth embodiment are the same as those of the second and fourth embodiments.

(Sixth embodiment)
The sixth embodiment will be described with reference to FIGS. In the semiconductor laser device 600 according to the sixth embodiment, unlike the first embodiment, the n-type GaN substrate 51 and the n-side pad electrode 63 are disposed at a position where the blue-violet semiconductor laser element 50a and the two-wavelength semiconductor laser element 60 overlap. A case where the two are not joined so as to be electrically connected will be described. In the figure, components similar to those in the first embodiment are denoted by the same reference numerals as those in the first embodiment. The blue-violet semiconductor laser element 50a is an example of the “first semiconductor laser element” in the present invention.

  As shown in FIG. 29, the semiconductor laser device 600 according to the sixth embodiment of the present invention is arranged so that the n-type GaN substrate 51 overlaps the two-wavelength semiconductor laser element 60, while the n-type GaN substrates 51 and 2 are arranged. The wavelength semiconductor laser element 60 is not joined, and the n-type GaN substrate 51 and the n-side pad electrode 63 are not electrically connected.

  On the other hand, the n-side pad electrode 63 of the two-wavelength semiconductor laser element 60 is connected to the electrode layer 117 on the base 115 via a metal wire 601. The remaining configuration of the semiconductor laser apparatus 600 according to the sixth embodiment is similar to that of the aforementioned first embodiment. In the manufacturing process of the semiconductor laser device 600 according to the sixth embodiment, the pad electrode 91 is not formed on the flat portion 51a, and the n-type GaN substrate 51 and the n-side pad electrode 63 are not electrically connected. The blue-violet semiconductor laser device 50a is substantially the same as the manufacturing process of the first embodiment except that the blue-violet semiconductor laser device 50a is bonded to the support substrate 101.

(Seventh embodiment)
The seventh embodiment will be described with reference to FIGS. 17 and 30. In the semiconductor laser device 700 according to the seventh embodiment, unlike the second embodiment, the n-type GaN is formed at a position where each of the red semiconductor laser element 270 and the infrared semiconductor laser element 280 and the blue-violet semiconductor laser element 250a overlap. A case where the substrate 251 and the n-side pad electrode 63 are electrically connected and not joined will be described. In the figure, components similar to those in the second embodiment are denoted by the same reference numerals as those in the second embodiment. The blue-violet semiconductor laser element 250a is an example of the “first semiconductor laser element” in the present invention.

  As shown in FIG. 30, the semiconductor laser device 700 according to the seventh embodiment of the present invention is arranged such that the n-type GaN substrate 251 overlaps each of the red semiconductor laser element 270 and the infrared semiconductor laser element 280. The red semiconductor laser element 270 and the infrared semiconductor laser element 280 are not bonded to the n-type GaN substrate 251, and the n-side pad electrode 63 of each of the red semiconductor laser element 270 and the infrared semiconductor laser element 280 Conduction with the n-type GaN substrate 251 is not achieved.

In the seventh embodiment, the pad electrodes 292 to 294 for bonding each of the three semiconductor laser elements to the conductive n-type Si support substrate 130 via the insulating film 131 made of SiO ₂ are provided. Is formed.

  The n-side pad electrode 63 of the red semiconductor laser element 270 is connected to the electrode layer 117 on the base 115 via the metal line 701, and the n-side pad electrode 63 in the infrared semiconductor laser element 280 is made of metal. The electrode layer 117 is connected through a line 702. The remaining configuration of the semiconductor laser apparatus 700 in the seventh embodiment is similar to that of the aforementioned second embodiment. In the manufacturing process of the semiconductor laser device 700 according to the seventh embodiment, the pad electrodes 291a and 291b are not formed on the flat portion 251a, and the n-type GaN substrate 251 and the n-side pad electrode 63 are electrically connected. The manufacturing process of the second embodiment is substantially the same as that of the second embodiment, except that the blue-violet semiconductor laser device 250a is bonded to the support substrate 101 without using the semiconductor laser.

(Eighth embodiment)
With reference to FIGS. 8 and 31, an optical pickup device 850 including a semiconductor laser device 100 according to an eighth embodiment of the present invention will be described.

  That is, as shown in FIG. 31, the optical pickup device 850 includes a semiconductor laser device 100 (see FIG. 8) according to the first embodiment, a polarization beam splitter (polarization BS) 801, a collimator lens 802, a beam expander 803, An optical system 820 having a λ / 4 plate 804, an objective lens 805, a cylindrical lens 806, and an optical axis correction element 807, and a light detection unit 860 are provided.

  In the optical system 820, the polarization BS 801 totally transmits the laser light emitted from the semiconductor laser device 100 and totally reflects the laser light returning from the optical disk 870. The collimator lens 802 converts the laser light from the semiconductor laser device 100 that has passed through the polarized light BS 801 into parallel light. The beam expander 803 includes a concave lens, a convex lens, and an actuator (not shown). The actuator changes the distance between the concave lens and the convex lens according to a servo signal from a servo circuit (not shown). As a result, the wavefront state of the laser light emitted from the semiconductor laser device 100 is corrected.

  The λ / 4 plate 804 converts the linearly polarized laser light converted into substantially parallel light by the collimator lens 802 into circularly polarized light. The λ / 4 plate 804 converts the circularly polarized laser beam returned from the optical disk 870 into linearly polarized light. In this case, the polarization direction of the linearly polarized light is orthogonal to the direction of the linearly polarized light of the laser light emitted from the semiconductor laser device 100. Thereby, the laser beam returning from the optical disk 870 is substantially totally reflected by the polarized light BS801. The objective lens 805 converges the laser light transmitted through the λ / 4 plate 804 on the surface (recording layer) of the optical disc 870. The objective lens 805 can be moved in the focus direction, tracking direction, and tilt direction by an objective lens actuator (not shown) in accordance with servo signals (tracking servo signal, focus servo signal, and tilt servo signal) from the servo circuit.

  A cylindrical lens 806, an optical axis correction element 807, and a light detection unit 860 are arranged along the optical axis of the laser light totally reflected by the polarized light BS801. The cylindrical lens 806 imparts astigmatism to the incident laser light. The optical axis correction element 807 is configured by a diffraction grating, and a spot of zero-order diffracted light of each of blue-violet, red, and infrared laser beams transmitted through the cylindrical lens 806 is on a detection region of the light detection unit 860 described later. They are arranged to match.

  Further, the light detection unit 860 outputs a reproduction signal based on the intensity distribution of the received laser light. Here, the light detection unit 860 has a detection area having a predetermined pattern so that a focus error signal, a tracking error signal, and a tilt error signal can be obtained together with the reproduction signal. The actuator of the beam expander 803 and the objective lens actuator are feedback-controlled by the focus error signal, tracking error signal, and tilt error signal. Thus, the optical pickup device 850 including the semiconductor laser device 100 is configured.

  In the eighth embodiment, as described above, since the semiconductor laser device 100 according to the first embodiment is used for the optical pickup device 850, an increase in the size (thickness) of the laser element is suppressed, and An optical pickup device 850 including the semiconductor laser device 100 capable of easily performing wire bonding of a metal wire to the laser element can be obtained.

  In the eighth embodiment, since the semiconductor laser device 100 is used for the optical pickup device 850, the emitted light of each semiconductor laser element is substantially the same angle (vertical direction) with respect to the recording surface of the optical disc 870. Therefore, it is possible to obtain an optical pickup device 850 in which the light spot quality of the semiconductor laser element on the optical disc 870 is suppressed from varying.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the embodiments but by the scope of claims for patent, and further includes all modifications within the meaning and scope equivalent to the scope of claims for patent.

  For example, in the first to eighth embodiments, a blue-violet semiconductor laser element is used as the first semiconductor laser element of the present invention, and a red semiconductor laser element and an infrared semiconductor laser element are used as the second semiconductor laser element of the present invention. Although an example in which the semiconductor laser device used is shown is shown, the present invention is not limited to this. In the present invention, a blue semiconductor laser element and a green semiconductor laser element are used as the first semiconductor laser element, and a red semiconductor laser element is used as the second semiconductor laser element. May be configured.

  In the first to eighth embodiments, the example in which the red semiconductor laser element and the infrared semiconductor laser element are bonded to the support substrate made of Si has been described. However, the present invention is not limited to this. In the present invention, a support substrate made of a material other than Si is used as long as the support substrate has a higher thermal conductivity than the GaAs substrate 65 as a growth substrate for crystal growth of a red semiconductor laser element or an infrared semiconductor laser element. Also good.

  Moreover, in the manufacturing processes of the first to eighth embodiments, the example in which the crystal growth of each nitride-based semiconductor layer is performed using the MOCVD method has been described, but the present invention is not limited to this. In the present invention, crystal growth of each nitride-based semiconductor layer may be performed using a halide vapor phase epitaxy method, a molecular beam epitaxy (MBE) method, a gas source MBE method, or the like.

  In the first to eighth embodiments, an example in which a blue-violet semiconductor laser element made of a III-V semiconductor containing the most nitrogen as a group V element is used as the “first semiconductor laser element” of the present invention has been described. However, the present invention is not limited to this. In the present invention, the first semiconductor laser element may be composed of a group III-V semiconductor containing phosphorus, arsenic or antimony in an amount smaller than nitrogen in addition to nitrogen.

10 First Semiconductor Laser Element 20 Second Semiconductor Laser Element 29 Substrate (Growth Substrate)
30a, 101a, 101c area (first area)
30b, 101b, 101e area (second area)
50, 250, 450, 550 Blue-violet semiconductor laser element (first semiconductor laser element)
50a, 250a Blue-violet semiconductor laser element (first semiconductor laser element)
60, 60a 2 wavelength semiconductor laser device (integrated semiconductor laser device)
65 GaAs substrate (growth substrate)
70, 270 Red semiconductor laser element (second semiconductor laser element, third semiconductor laser element)
80, 280 Infrared semiconductor laser element (third semiconductor laser element, second semiconductor laser element)
100, 100a, 100b, 200, 300, 400, 500, 600, 700 Semiconductor laser device 101 Support substrate 101d Region (third region)
130 Si support substrate (support substrate)

Claims (6)

Forming a first semiconductor laser element including a first surface and a second surface provided on the opposite side of the first surface;
Forming a second semiconductor laser element including a third surface and a fourth surface provided on the opposite side of the third surface;
After joining the third surface to the first region on one surface of the support substrate, the first surface is placed on the one surface of the support substrate so that a part of the first surface overlaps the fourth surface. And a step of bonding to a second region other than the first region. The step of forming the second semiconductor laser element includes the step of forming the second semiconductor laser element including the third surface on the surface of the growth substrate,
Prior to the step of bonding the first surface to the second region of the support substrate, the thickness of the second semiconductor laser device is removed by removing at least a portion of the growth substrate in a region overlapping with the first semiconductor laser device. The method of manufacturing a semiconductor laser device according to claim 1, further comprising a step of forming the fourth surface on the second semiconductor laser element by reducing the size of the second semiconductor laser element.   3. The method of manufacturing a semiconductor laser device according to claim 1, wherein the second semiconductor laser element is made of a III-V group semiconductor containing the largest amount of phosphorus or arsenic as a group V element. A first semiconductor laser element including a first surface and a second surface provided on the opposite side of the first surface;
An integrated semiconductor laser element including a third surface and a fourth surface provided on the opposite side of the third surface, the integrated semiconductor laser element including a second semiconductor laser element and a third semiconductor laser element;
A support substrate to which the first semiconductor laser element and the integrated semiconductor laser element are bonded;
The third surface is bonded to a first region on one surface of the support substrate;
The semiconductor laser device, wherein the first surface is bonded to a second region other than the first region on the one surface of the support substrate so that a part of the first surface overlaps the fourth surface. A first semiconductor laser element including a first surface and a second surface provided on the opposite side of the first surface;
A second semiconductor laser element including a third surface and a fourth surface provided on the opposite side of the third surface;
A third semiconductor laser element including a fifth surface and a sixth surface provided on the opposite side of the fifth surface;
A support substrate to which the first semiconductor laser element, the second semiconductor laser element, and the third semiconductor laser element are bonded;
The third surface is bonded to a first region on one surface of the support substrate;
The fifth surface is bonded to a third region on the one surface of the support substrate;
In the first semiconductor laser element, the first surface is on the one surface of the support substrate so that a part of the first surface overlaps each of the fourth surface and the sixth surface. And joined to a second region other than the third region,
A semiconductor laser device, wherein the first surface is bonded to the second region sandwiched between the first region and the third region.   7. The semiconductor laser device according to claim 5, wherein each of the second semiconductor laser element and the third semiconductor laser element is made of a group III-V semiconductor containing the largest amount of phosphorus or arsenic as a group V element.

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