[go: up one dir, main page]

JP2011165691A - 減圧乾燥方法及び減圧乾燥装置 - Google Patents

減圧乾燥方法及び減圧乾燥装置 Download PDF

Info

Publication number
JP2011165691A
JP2011165691A JP2010023045A JP2010023045A JP2011165691A JP 2011165691 A JP2011165691 A JP 2011165691A JP 2010023045 A JP2010023045 A JP 2010023045A JP 2010023045 A JP2010023045 A JP 2010023045A JP 2011165691 A JP2011165691 A JP 2011165691A
Authority
JP
Japan
Prior art keywords
pressure
solvent
chamber
coating film
reduced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010023045A
Other languages
English (en)
Japanese (ja)
Inventor
Yutaka Aso
豊 麻生
Kazuya Iwanaga
和也 岩永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2010023045A priority Critical patent/JP2011165691A/ja
Priority to KR1020110005860A priority patent/KR20110090773A/ko
Priority to TW100103096A priority patent/TWI479111B/zh
Priority to CN2011100353635A priority patent/CN102193345A/zh
Publication of JP2011165691A publication Critical patent/JP2011165691A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H10P76/2041—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Solid Materials (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2010023045A 2010-02-04 2010-02-04 減圧乾燥方法及び減圧乾燥装置 Pending JP2011165691A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010023045A JP2011165691A (ja) 2010-02-04 2010-02-04 減圧乾燥方法及び減圧乾燥装置
KR1020110005860A KR20110090773A (ko) 2010-02-04 2011-01-20 감압건조방법 및 감압건조장치
TW100103096A TWI479111B (zh) 2010-02-04 2011-01-27 減壓乾燥方法及減壓乾燥裝置
CN2011100353635A CN102193345A (zh) 2010-02-04 2011-01-31 减压干燥方法和减压干燥装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010023045A JP2011165691A (ja) 2010-02-04 2010-02-04 減圧乾燥方法及び減圧乾燥装置

Publications (1)

Publication Number Publication Date
JP2011165691A true JP2011165691A (ja) 2011-08-25

Family

ID=44596067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010023045A Pending JP2011165691A (ja) 2010-02-04 2010-02-04 減圧乾燥方法及び減圧乾燥装置

Country Status (4)

Country Link
JP (1) JP2011165691A (zh)
KR (1) KR20110090773A (zh)
CN (1) CN102193345A (zh)
TW (1) TWI479111B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016044897A (ja) * 2014-08-25 2016-04-04 株式会社Ｓｃｒｅｅｎホールディングス 減圧乾燥装置、基板処理装置および減圧乾燥方法
JP2019036654A (ja) * 2017-08-18 2019-03-07 株式会社Ｓｃｒｅｅｎホールディングス 減圧乾燥装置、基板処理装置および減圧乾燥方法
JP2019163913A (ja) * 2018-03-20 2019-09-26 株式会社Ｓｃｒｅｅｎホールディングス 減圧乾燥装置、基板処理装置および減圧乾燥方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106597732A (zh) * 2017-02-05 2017-04-26 武汉华星光电技术有限公司 液晶面板及其光阻图案形成方法
JP7316323B2 (ja) * 2021-06-30 2023-07-27 株式会社Ｓｃｒｅｅｎホールディングス 減圧乾燥装置および減圧乾燥方法
CN116749667B (zh) * 2022-03-04 2025-12-19 广东聚华印刷显示技术有限公司 喷墨打印方法以及喷墨打印装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004047797A (ja) * 2002-07-12 2004-02-12 Tokyo Electron Ltd 減圧乾燥装置、塗布膜形成装置及び減圧乾燥方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4049751B2 (ja) * 2004-02-05 2008-02-20 東京エレクトロン株式会社 塗布膜形成装置
JP5280000B2 (ja) * 2006-01-31 2013-09-04 東京応化工業株式会社 減圧乾燥処理装置
JP2008241797A (ja) * 2007-03-26 2008-10-09 Nippon Zeon Co Ltd 新規なポジ型感光性樹脂組成物を用いるレジストパターン形成方法
JP2008292549A (ja) * 2007-05-22 2008-12-04 Fujifilm Corp 塗布膜付き基板の製造方法、カラーフィルタ及びその製造方法、並びに表示装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004047797A (ja) * 2002-07-12 2004-02-12 Tokyo Electron Ltd 減圧乾燥装置、塗布膜形成装置及び減圧乾燥方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016044897A (ja) * 2014-08-25 2016-04-04 株式会社Ｓｃｒｅｅｎホールディングス 減圧乾燥装置、基板処理装置および減圧乾燥方法
JP2019036654A (ja) * 2017-08-18 2019-03-07 株式会社Ｓｃｒｅｅｎホールディングス 減圧乾燥装置、基板処理装置および減圧乾燥方法
JP2019163913A (ja) * 2018-03-20 2019-09-26 株式会社Ｓｃｒｅｅｎホールディングス 減圧乾燥装置、基板処理装置および減圧乾燥方法
JP7061489B2 (ja) 2018-03-20 2022-04-28 株式会社Ｓｃｒｅｅｎホールディングス 減圧乾燥装置、基板処理装置および減圧乾燥方法

Also Published As

Publication number Publication date
TWI479111B (zh) 2015-04-01
KR20110090773A (ko) 2011-08-10
TW201200830A (en) 2012-01-01
CN102193345A (zh) 2011-09-21

Similar Documents

Publication Publication Date Title
JP6391362B2 (ja) 減圧乾燥装置、基板処理装置および減圧乾燥方法
JP2011165691A (ja) 減圧乾燥方法及び減圧乾燥装置
JP6017928B2 (ja) プラズマエッチング方法及びプラズマエッチング装置
JP2008518463A5 (zh)
TWI485767B (zh) Manufacturing method of semiconductor device
JP3913625B2 (ja) 減圧乾燥装置、塗布膜形成装置及び減圧乾燥方法
JP4652140B2 (ja) プラズマエッチング方法、制御プログラム、コンピュータ記憶媒体
US10115591B2 (en) Selective SiARC removal
TWI682481B (zh) 減壓乾燥裝置、基板處理裝置及減壓乾燥方法
JPH08339950A (ja) フォトレジストパターン形成方法及びフォトレジスト処理装置
KR20200098386A (ko) 드라이 에칭 방법 및 드라이 에칭 장치
JP3696164B2 (ja) 液状膜の処理方法及び液状膜の処理装置
WO2008056614A1 (en) Reflow method, pattern-forming method, and method for manufacturing tft
CN108573861B (zh) 半导体器件的制造方法、衬底处理装置及记录介质
JP6560072B2 (ja) 減圧乾燥装置および減圧乾燥方法
JP2019036654A (ja) 減圧乾燥装置、基板処理装置および減圧乾燥方法
WO2019015006A1 (zh) 减压干燥设备及减压干燥方法
KR102010267B1 (ko) 기판 처리 장치 및 기판 처리 방법
KR100945928B1 (ko) 스페이서를 이용한 반도체 소자의 패턴 형성방법
JPH04313215A (ja) ベーク処理方法
JPH03131024A (ja) 半導体のエッチング方法
Liu et al. The Improvement of the Pattern Wiggling Profile by Photo Resist Treatment
KR20050117880A (ko) 중성빔 소스를 이용한 이중층 포토 마스크 형성 방법
JPS59186327A (ja) ドライエツチング方法
JP2012151189A (ja) 微細パターン形成方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110905

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110930

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20120207