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JP2011153334A - Plating method and electroplating apparatus - Google Patents

Plating method and electroplating apparatus Download PDF

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JP2011153334A
JP2011153334A JP2010014142A JP2010014142A JP2011153334A JP 2011153334 A JP2011153334 A JP 2011153334A JP 2010014142 A JP2010014142 A JP 2010014142A JP 2010014142 A JP2010014142 A JP 2010014142A JP 2011153334 A JP2011153334 A JP 2011153334A
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anode
insulating layer
electrolytic plating
plating solution
base material
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Natsuki Makino
夏木 牧野
Masaaki Kato
正明 加藤
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Sumitomo Bakelite Co Ltd
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Sumitomo Bakelite Co Ltd
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Priority to JP2010014142A priority Critical patent/JP2011153334A/en
Priority to PCT/JP2011/000191 priority patent/WO2011093023A1/en
Priority to TW100102585A priority patent/TW201139753A/en
Publication of JP2011153334A publication Critical patent/JP2011153334A/en
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a plating method which can stably perform plating, and an electroplating apparatus. <P>SOLUTION: The electroplating apparatus 2 includes: a cathode 20 connected to a conductive layer 12; an anode 21 arranged at the lower part of a base material 1 so as to face the other side of the base material 1; and an electroplating liquid feeding part 23 flowing an electroplating liquid L between the other side of the base material 1 and the anode 21. The electroplating apparatus 2 flows the electroplating liquid l between the other side of an insulating layer 11 and the anode 21 by the electroplating liquid feeding part 23 and further exhausts the electroplating liquid L between the other side of the insulating layer 11 and the anode 21 to the part lower than the other side of the insulating layer 11. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、めっき方法および電解めっき装置に関する。   The present invention relates to a plating method and an electrolytic plating apparatus.

従来、電子機器等に搭載される回路基板は、次のようにして製造されている(特許文献1、2参照)。
はじめに、絶縁層と、この絶縁層の一方の面に形成された第一金属膜とを有する基材を用意する。そして、基材の前記絶縁層に、レーザ等で孔を形成する。次に、第一金属膜をマスクで被覆する。その後、基材をめっき液に浸し、電解めっきを行う。これにより、絶縁層の孔中にビアを形成する。
次に、絶縁層の他方の面側に第二金属膜を形成し、第一金属膜、第二金属膜をそれぞれエッチング等で加工することで、回路層を形成する。
Conventionally, a circuit board mounted on an electronic device or the like is manufactured as follows (see Patent Documents 1 and 2).
First, a base material having an insulating layer and a first metal film formed on one surface of the insulating layer is prepared. And a hole is formed in the said insulating layer of a base material with a laser. Next, the first metal film is covered with a mask. Thereafter, the substrate is immersed in a plating solution, and electrolytic plating is performed. This forms a via in the hole of the insulating layer.
Next, a second metal film is formed on the other surface side of the insulating layer, and the first metal film and the second metal film are processed by etching or the like to form a circuit layer.

特開2007−188985号公報JP 2007-188985 A 特開2005−272874号公報JP 2005-272874 A

このような製造方法では、絶縁層の孔内にめっき法により、ビアを形成する際、第一金属膜の側面が露出していると第一金属膜の側面にめっきが析出してしまう。この場合には、第一金属膜側面の面積が本来めっきを析出させるべき孔面積に比較して非常に大きいためめっきの析出が優先的に進行し、孔内部にめっきがつきにくくなる。特に孔の径が非常に小さいような場合には、このような現象は顕著である。   In such a manufacturing method, when the via is formed in the hole of the insulating layer by plating, if the side surface of the first metal film is exposed, plating is deposited on the side surface of the first metal film. In this case, since the area of the side surface of the first metal film is very large compared to the hole area where the plating should be deposited, the deposition of the plating proceeds preferentially, and the inside of the hole becomes difficult to be plated. Such a phenomenon is remarkable especially when the diameter of the hole is very small.

本発明によれば、貫通孔が形成された絶縁層と、この絶縁層の一面に設けられ、前記貫通孔の一方の開口を塞ぐ導電層とを有する基材を用意する工程と、
前記導電層に陰極を接続するとともに、前記絶縁層の他面が陽極と対向するように、前記陽極の上方に前記基材を配置する工程と、
前記絶縁層の他面と前記陽極との間に電解めっき液を流して、前記貫通孔内にめっき膜を形成するとともに、前記絶縁層の他面と前記陽極との間の前記電解めっき液を前記絶縁層の他面よりも下方に排出する工程とを含むめっき方法が提供される。
According to the present invention, a step of preparing a base material having an insulating layer in which a through hole is formed and a conductive layer that is provided on one surface of the insulating layer and closes one opening of the through hole;
Connecting the cathode to the conductive layer and disposing the substrate above the anode so that the other surface of the insulating layer faces the anode;
An electrolytic plating solution is allowed to flow between the other surface of the insulating layer and the anode to form a plating film in the through hole, and the electrolytic plating solution between the other surface of the insulating layer and the anode is used. And a step of discharging below the other surface of the insulating layer.

この発明によれば、絶縁層の他面(導電層が設けられた面と反対側の面)と、陽極との間に電解めっき液を流し、貫通孔内にめっき膜を形成している。そして、電解めっき液を絶縁層の他面よりも下方に排出している。
これにより、絶縁層の一面上に設けられた導電層の側面に電解めっき液が付着し、導電層の側面にめっきが析出してしまうことを抑制できる。これにより、孔内部に安定的にめっきを施すことができる。
According to this invention, the electrolytic plating solution is allowed to flow between the other surface of the insulating layer (the surface opposite to the surface on which the conductive layer is provided) and the anode, thereby forming a plating film in the through hole. The electrolytic plating solution is discharged below the other surface of the insulating layer.
Thereby, it can suppress that electroplating liquid adheres to the side surface of the conductive layer provided on the one surface of the insulating layer, and plating will deposit on the side surface of the conductive layer. Thereby, plating can be stably performed inside the hole.

さらに、本発明によれば、
貫通孔が形成された絶縁層と、この絶縁層の一面に設けられ、前記貫通孔の一方の開口を塞ぐ導電層とを有する基材の前記貫通孔内に電解めっきを行うための電解めっき装置であって、
前記導電層に接続される陰極と、
前記基材の他面と対向するように前記基材の下方に配置される前記陽極と、
前記基材の他面と、前記陽極との間に電解めっき液を流す電解めっき液供給部とを備え、
当該電解めっき装置は、前記電解めっき液供給部により、前記絶縁層の他面と前記陽極との間に電解めっき液を流すとともに、前記絶縁層の他面と、前記陽極との間の電解めっき液を前記絶縁層の他面よりも下方に排出するように構成される電解めっき装置も提供できる。
Furthermore, according to the present invention,
Electrolytic plating apparatus for performing electroplating in the through-hole of a base material having an insulating layer in which a through-hole is formed and a conductive layer provided on one surface of the insulating layer and blocking one opening of the through-hole Because
A cathode connected to the conductive layer;
The anode disposed below the substrate so as to face the other surface of the substrate;
An electroplating solution supply section for flowing an electroplating solution between the other surface of the substrate and the anode;
In the electrolytic plating apparatus, the electrolytic plating solution is supplied between the other surface of the insulating layer and the anode by the electrolytic plating solution supply unit, and the electrolytic plating is performed between the other surface of the insulating layer and the anode. An electroplating apparatus configured to discharge the liquid below the other surface of the insulating layer can also be provided.

安定的にめっきを行うことができるめっき方法、電解めっき装置が提供される。   A plating method and an electrolytic plating apparatus capable of performing stable plating are provided.

本発明の一実施形態にかかる電解めっき装置を示す平面図である。It is a top view which shows the electroplating apparatus concerning one Embodiment of this invention. 図1のII-II方向の断面図である。It is sectional drawing of the II-II direction of FIG. 図1のIII-III方向の断面図である。It is sectional drawing of the III-III direction of FIG. 電解めっき装置の支持部材を示す図である。It is a figure which shows the supporting member of an electroplating apparatus. 基材を示す断面図である。It is sectional drawing which shows a base material. 本発明の変形例にかかる電解めっき装置を示す平面図である。It is a top view which shows the electroplating apparatus concerning the modification of this invention. 本発明の変形例にかかる陽極を示す平面図である。It is a top view which shows the anode concerning the modification of this invention. 本発明の変形例にかかる電解めっき装置を示す図である。It is a figure which shows the electroplating apparatus concerning the modification of this invention. 本発明の変形例にかかる電解めっき装置の要部を示す図である。It is a figure which shows the principal part of the electroplating apparatus concerning the modification of this invention.

以下、本発明の実施形態を図面に基づいて説明する。
図1〜図3を参照して、本実施形態の電解めっき装置2の概要について説明する。
図1は、電解めっき装置2の平面図であり、図2は、図1のII-II方向の断面図であり、図3は、図1のIII-III方向の断面図である。
本実施形態の電解めっき装置2は、貫通孔111が形成された絶縁層11と、この絶縁層11の一面に設けられ、貫通孔111の一方の開口を塞ぐ導電層12とを有する基材1の貫通孔111内に電解めっきを行うための電解めっき装置である。
電解めっき装置2は、導電層12に接続される陰極20と、基材1の他面と対向するように基材1の下方に配置される陽極21と、基材1の他面と、陽極21との間に電解めっき液Lを流す電解めっき液供給部23と、陽極21の上方で基材1を保持し、陽極21と基材1の他面とが対向するように基材1を保持する保持部(搬送ローラ25および陰極20で構成される)を備える。
電解めっき装置2は、電解めっき液供給部23により、絶縁層11の他面と陽極21との間に電解めっき液Lを流すとともに、絶縁層11の他面と、陽極21との間の電解めっき液Lを絶縁層11の他面よりも下方に排出するように構成される。
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
With reference to FIGS. 1-3, the outline | summary of the electroplating apparatus 2 of this embodiment is demonstrated.
1 is a plan view of the electrolytic plating apparatus 2, FIG. 2 is a cross-sectional view in the II-II direction of FIG. 1, and FIG. 3 is a cross-sectional view in the III-III direction of FIG.
The electrolytic plating apparatus 2 of the present embodiment includes a base material 1 having an insulating layer 11 in which a through hole 111 is formed, and a conductive layer 12 provided on one surface of the insulating layer 11 and closing one opening of the through hole 111. It is an electroplating apparatus for performing electroplating in the through-hole 111 of this.
The electroplating apparatus 2 includes a cathode 20 connected to the conductive layer 12, an anode 21 disposed below the substrate 1 so as to face the other surface of the substrate 1, the other surface of the substrate 1, and an anode The base plate 1 is held above the anode 21 and the anode 21 and the other surface of the base plate 1 are opposed to each other. A holding unit (consisting of the conveyance roller 25 and the cathode 20) is provided.
In the electrolytic plating apparatus 2, the electrolytic plating solution supply unit 23 causes the electrolytic plating solution L to flow between the other surface of the insulating layer 11 and the anode 21, and electrolysis is performed between the other surface of the insulating layer 11 and the anode 21. The plating solution L is configured to be discharged below the other surface of the insulating layer 11.

次に、本実施形態の電解めっき装置2について詳細に説明する。
はじめに、電解めっき装置2のめっき対象となる基材1について説明する。
この基材1は、図5に示すように、貫通孔111が形成された絶縁層11と、導電層12と備える。
基材1は、たとえば、フレキシブル回路基板となるものである。
絶縁層11は、たとえば、ポリイミドフィルムであり、厚みは10μm〜200μm程度である。
絶縁層11には、表裏面を貫通する複数の貫通孔111が形成されている。この貫通孔111は、絶縁層11の表面(一面)側から裏面(他面)側に向かって径が大きくなるように形成されており、断面テーパ形状である。
絶縁層11の一面側には、複数の貫通孔111の開口を塞ぐ導電層12が設けられている。導電層12は、金属膜であり、たとえば、銅膜である。
導電層12の厚みは、たとえば、5〜50μmである。
Next, the electrolytic plating apparatus 2 of this embodiment will be described in detail.
First, the base material 1 to be plated by the electrolytic plating apparatus 2 will be described.
As shown in FIG. 5, the base material 1 includes an insulating layer 11 in which a through hole 111 is formed and a conductive layer 12.
The base material 1 becomes a flexible circuit board, for example.
The insulating layer 11 is, for example, a polyimide film and has a thickness of about 10 μm to 200 μm.
A plurality of through holes 111 penetrating the front and back surfaces are formed in the insulating layer 11. The through hole 111 is formed so that the diameter increases from the front surface (one surface) side to the back surface (other surface) side of the insulating layer 11 and has a tapered cross section.
On one surface side of the insulating layer 11, a conductive layer 12 that closes the openings of the plurality of through holes 111 is provided. The conductive layer 12 is a metal film, for example, a copper film.
The thickness of the conductive layer 12 is, for example, 5 to 50 μm.

図1〜4に示すように、本実施形態の電解めっき装置2は、陰極20と、陽極21と、電解めっき液供給部23と、電解めっき液Lが充填されためっき槽24と、搬送ローラ25と、支持部材26とを備える。   As shown in FIGS. 1 to 4, the electrolytic plating apparatus 2 of the present embodiment includes a cathode 20, an anode 21, an electrolytic plating solution supply unit 23, a plating tank 24 filled with an electrolytic plating solution L, and a transport roller. 25 and a support member 26.

本実施形態の電解めっき装置2は、搬送ローラ25により、めっき槽24上でシート状の基材1を保持しながら搬送し、連続めっきする装置である。
めっき槽24には、電解めっき液L、たとえば、硫酸銅等の電解めっき液が充填されている。
陽極21は、めっき槽24中の電解めっき液L中に浸漬されておらず、めっき槽24中の電解めっき液Lの液面よりも上方に配置される。
ここで、陽極21は、溶解性の陽極であってもよく、不溶性の陽極であってもよい。
陽極21は、複数の金属板211で構成され、基材1の搬送方向(図1〜3のx方向)および搬送方向と直交する方向(図1〜3のy方向)に配置されている。たとえば、金属板211は、基材1の搬送方向を「行」、搬送方向と直交する方向を「列」とした場合、10行×2列で配置されている。
各金属板211は、図4に示すような支持部材26で支持され、基材1の搬送方向(x方向)に沿って隣り合う金属板211同士、基材1の搬送方向と直交する方向(y方向)に隣り合う金属板211同士は、離間配置されている。
図4(A)は、支持部材26の平面図であり、図4(B)は、図4(A)のIV-IV方向の断面図である。
支持部材26は、たとえば、絶縁性の材料で構成され、金属板211をはめ込むための凹部261が形成されている。この支持部材26には、中央に、基材1の搬送方向に沿って延在する貫通溝262が形成されている。この貫通溝262は、基材1の搬送方向と直交する方向に隣り合う金属板211間に位置し、この貫通溝262を介して電解めっき液Lが基材1側に供給される。
図1および図2に示すように陽極21の幅W1(本実施形態では、基材1の搬送方向に直交する方向に並んだ2枚の金属板211間の隙間および2枚の金属板211の幅の合計値)は、基材1の幅W2(基材1の搬送方向と直交する方向の長さ)よりも小さい。
さらに、本実施形態では、支持部材26の幅W3(基材搬送方向と直交する方向の長さ)は、基材1の幅W2よりも小さい。
また、めっき槽24上部側からの平面視において、基材搬送方向と直交する方向に並んだ金属板211間の隙間、すなわち、貫通溝262は、基材1の搬送方向と直交する方向の幅W2の略中央に位置する。
ここで、図2に示すように、基材1を陽極21上に搬送し、基材1と陽極21とを対向させた状態において、金属板211の直上に位置する基材1の導電層12と、金属板211との間の距離Hは、0.1mm以上であることが好ましい。
0.1mm以上とすることで、基板1と陽極21との物理的な接触が避けられ、電流集中によるめっき焼けの現象が防止されるという効果がある。
なお、距離Hの上限値は特に限定されないが、たとえば、1000mm以下であることが好ましい。
The electroplating apparatus 2 of this embodiment is an apparatus for carrying and continuously plating the sheet-like substrate 1 while being held on the plating tank 24 by the carrying roller 25.
The plating tank 24 is filled with an electrolytic plating solution L, for example, an electrolytic plating solution such as copper sulfate.
The anode 21 is not immersed in the electroplating solution L in the plating tank 24, and is disposed above the liquid surface of the electroplating solution L in the plating tank 24.
Here, the anode 21 may be a soluble anode or an insoluble anode.
The anode 21 is composed of a plurality of metal plates 211 and is disposed in the transport direction of the base material 1 (x direction in FIGS. 1 to 3) and in the direction orthogonal to the transport direction (y direction in FIGS. 1 to 3). For example, the metal plates 211 are arranged in 10 rows × 2 columns when the transport direction of the base material 1 is “row” and the direction orthogonal to the transport direction is “column”.
Each metal plate 211 is supported by a support member 26 as shown in FIG. 4, and the metal plates 211 adjacent to each other along the transport direction (x direction) of the base material 1, the direction orthogonal to the transport direction of the base material 1 ( The metal plates 211 adjacent in the y direction are spaced apart.
4A is a plan view of the support member 26, and FIG. 4B is a cross-sectional view in the IV-IV direction of FIG. 4A.
The support member 26 is made of, for example, an insulating material, and has a recess 261 for fitting the metal plate 211. The support member 26 is formed with a through groove 262 extending in the center in the conveyance direction of the base material 1. The through groove 262 is located between the metal plates 211 adjacent to each other in the direction orthogonal to the conveyance direction of the substrate 1, and the electrolytic plating solution L is supplied to the substrate 1 side through the through groove 262.
As shown in FIG. 1 and FIG. 2, the width W1 of the anode 21 (in this embodiment, the gap between the two metal plates 211 aligned in the direction orthogonal to the transport direction of the base material 1 and the two metal plates 211 The total width) is smaller than the width W2 of the substrate 1 (the length in the direction orthogonal to the conveyance direction of the substrate 1).
Furthermore, in the present embodiment, the width W3 of the support member 26 (the length in the direction orthogonal to the substrate transport direction) is smaller than the width W2 of the substrate 1.
Further, in a plan view from the upper side of the plating tank 24, a gap between the metal plates 211 arranged in a direction orthogonal to the substrate transport direction, that is, the through groove 262 has a width in a direction orthogonal to the substrate 1 transport direction. Located at approximately the center of W2.
Here, as shown in FIG. 2, the conductive layer 12 of the base material 1 positioned immediately above the metal plate 211 in a state where the base material 1 is conveyed onto the anode 21 and the base material 1 and the anode 21 are opposed to each other. And the distance H between the metal plate 211 is preferably 0.1 mm or more.
By setting the thickness to 0.1 mm or more, physical contact between the substrate 1 and the anode 21 can be avoided, and the effect of preventing plating burn due to current concentration can be prevented.
The upper limit value of the distance H is not particularly limited, but is preferably 1000 mm or less, for example.

陰極20は、ロール状に形成され、陽極21よりも上方に配置されている。この陰極20は、基材1表面の導電層12に接触するように配置され、基材1を搬送するための搬送ローラとして機能する。
たとえば、図1,3に示すように、陰極20は、基材1の搬送方向基端側および先端側にそれぞれ配置されている。
The cathode 20 is formed in a roll shape and is disposed above the anode 21. The cathode 20 is disposed so as to be in contact with the conductive layer 12 on the surface of the base material 1 and functions as a transport roller for transporting the base material 1.
For example, as shown in FIGS. 1 and 3, the cathodes 20 are respectively disposed on the base end side and the tip end side of the base material 1 in the transport direction.

搬送ローラ25は、基材1を陽極21上で搬送するものである。   The transport roller 25 transports the base material 1 on the anode 21.

図2に示すように、電解めっき液供給部23は、めっき槽24中の電解めっき液Lをめっき槽24上部に配置される基材1に向かって供給するものである。電解めっき液供給部23は、たとえば、ポンプPおよびポンプPに接続された配管Mで構成される。
電解めっき液供給部23から排出された電解めっき液Lは、金属板211間の隙間(すなわち、貫通溝262)を介して、基材1に向かって供給される。
そして、図2に示すように、電解めっき液Lは、基材1の絶縁層11と、各金属板211との間を流れ、各金属板211の外側の端部(基材1の搬送方向と直交する方向の端部)側から下方に向かって、自重により落下することとなる。
なお、電解めっき液供給部23の配管Mを複数設け、貫通溝262の長手方向全体にわたって、電解めっき液Lが供給される構造としてもよく、また、図9に示すように、貫通溝262の下方に、貫通溝262の長手方向に沿って配置される複数の貫通穴281が形成された板材28を配置し、複数の貫通穴281および貫通溝262を介して、貫通溝262の長手方向全体にわたって、電解めっき液Lが供給される構造としてもよい。
なお、図9は、図4(A)のIX−IX方向の断面図に板材28を追加した断面図である。また、図9の矢印は、電解めっき液Lの流れを示す。
As shown in FIG. 2, the electrolytic plating solution supply unit 23 supplies the electrolytic plating solution L in the plating tank 24 toward the substrate 1 disposed on the upper part of the plating tank 24. The electrolytic plating solution supply unit 23 includes, for example, a pump P and a pipe M connected to the pump P.
The electrolytic plating solution L discharged from the electrolytic plating solution supply unit 23 is supplied toward the substrate 1 through the gaps between the metal plates 211 (that is, the through grooves 262).
As shown in FIG. 2, the electrolytic plating solution L flows between the insulating layer 11 of the substrate 1 and each metal plate 211, and the outer end portion of each metal plate 211 (the conveyance direction of the substrate 1). From the end in the direction orthogonal to the lower side), and falls downward due to its own weight.
Note that a plurality of pipes M of the electrolytic plating solution supply unit 23 may be provided so that the electrolytic plating solution L is supplied over the entire longitudinal direction of the through groove 262. Also, as shown in FIG. A plate material 28 having a plurality of through holes 281 disposed along the longitudinal direction of the through groove 262 is disposed below, and the entire longitudinal direction of the through groove 262 is disposed via the plurality of through holes 281 and the through grooves 262. Further, a structure in which the electrolytic plating solution L is supplied may be adopted.
9 is a cross-sectional view in which a plate material 28 is added to the cross-sectional view in the IX-IX direction of FIG. Further, the arrows in FIG. 9 indicate the flow of the electrolytic plating solution L.

次に、以上のような電解めっき装置2を使用しためっき方法について説明する。
はじめに、本実施形態のめっき方法の概要について説明する。
本実施形態のめっき方法は、貫通孔111が形成された絶縁層11と、この絶縁層11の一面に設けられ、貫通孔111の一方の開口を塞ぐ導電層12とを有する基材1を用意する工程と、導電層12に陰極20を接続するとともに、絶縁層11の他面が陽極21と対向するように、陽極21の上方に基材1を配置する工程と、
絶縁層11の他面と陽極21との間に電解めっき液を流して、貫通孔111内にめっき膜を形成するとともに、絶縁層11の他面と陽極21との間の電解めっき液を絶縁層11の他面よりも下方に排出する工程とを含む。
Next, a plating method using the electrolytic plating apparatus 2 as described above will be described.
First, the outline | summary of the plating method of this embodiment is demonstrated.
The plating method of the present embodiment prepares a base material 1 having an insulating layer 11 in which a through hole 111 is formed and a conductive layer 12 provided on one surface of the insulating layer 11 and closing one opening of the through hole 111. Connecting the cathode 20 to the conductive layer 12, and disposing the base material 1 above the anode 21 so that the other surface of the insulating layer 11 faces the anode 21,
An electrolytic plating solution is allowed to flow between the other surface of the insulating layer 11 and the anode 21 to form a plating film in the through hole 111, and the electrolytic plating solution between the other surface of the insulating layer 11 and the anode 21 is insulated. And a step of discharging below the other surface of the layer 11.

次に、本実施形態のめっき方法について詳細に説明する。
はじめに、基材1を用意する。
基材1は、図示しないが、ロール状に巻かれており、搬送ローラ25および陰極20を介して、基材1はめっき槽24上に供給される。このとき、陰極20に導電層12が直接接触するように基材1を供給する。
なお、電解めっきの前段では、脱脂が行われる。
Next, the plating method of this embodiment will be described in detail.
First, the base material 1 is prepared.
Although not shown, the substrate 1 is wound in a roll shape, and the substrate 1 is supplied onto the plating tank 24 via the transport roller 25 and the cathode 20. At this time, the substrate 1 is supplied so that the conductive layer 12 is in direct contact with the cathode 20.
In addition, degreasing is performed before the electroplating.

基材1は、搬送ローラ25および陰極20により、めっき槽24上で搬送されるが、このとき、めっき槽24中の電解めっき液Lを、陽極21側から、基材1に向かって上方に供給する(図2参照)。電解めっき液Lは、陽極21の基材搬送方向と直交する方向に並ぶ金属板211間に形成された隙間(本実施形態では、貫通溝262)を介して、基材1の絶縁層11の他面と金属板211との間に供給される。この電解めっき液Lは、絶縁層11の貫通孔111内にも供給される。これにより、図2に示すように、金属板211と絶縁層11との間の隙間および貫通孔111内は、電解めっき液Lで充填され、電解めっき液Lは、金属板211と、貫通孔111から露出する導電層12とに接触し、貫通孔111内部にめっきが析出することとなる。
なお、基材1がめっき槽24上部を通過する間、貫通溝262からは、連続的に電解めっき液Lが供給される。従って、基材1がめっき槽24の上部を通過する間は、金属板211と絶縁層11との間の隙間および貫通孔111内が電解めっき液Lで満たされた状態が維持されることとなる。
The substrate 1 is conveyed on the plating tank 24 by the conveying roller 25 and the cathode 20. At this time, the electrolytic plating solution L in the plating tank 24 is moved upward from the anode 21 side toward the substrate 1. Supply (see FIG. 2). The electrolytic plating solution L is applied to the insulating layer 11 of the substrate 1 through a gap (in this embodiment, the through groove 262) formed between the metal plates 211 arranged in a direction perpendicular to the substrate conveyance direction of the anode 21. Supplied between the other surface and the metal plate 211. The electrolytic plating solution L is also supplied into the through hole 111 of the insulating layer 11. As a result, as shown in FIG. 2, the gap between the metal plate 211 and the insulating layer 11 and the inside of the through hole 111 are filled with the electrolytic plating solution L. The electrolytic plating solution L includes the metal plate 211 and the through hole. In contact with the conductive layer 12 exposed from 111, plating is deposited inside the through hole 111.
In addition, while the base material 1 passes the upper part of the plating tank 24, the electrolytic plating solution L is continuously supplied from the through groove 262. Therefore, while the substrate 1 passes through the upper part of the plating tank 24, the state where the gap between the metal plate 211 and the insulating layer 11 and the inside of the through hole 111 are filled with the electrolytic plating solution L is maintained. Become.

基材1の絶縁層11の他面と金属板211との間に供給された電解めっき液Lは、図2に示すように、金属板211の外側の端部(貫通溝262側と反対側の端部)側から、絶縁層11の他面よりも下方に、自重により落下することとなる。
ここで、前述したように、陽極21の幅W1は、基材1の幅W2よりも小さく、めっき槽24上方からの平面視において、基材1の端部が、陽極21の端部よりも、基材搬送方向と直交する方向(外方)に突出している。さらに、本実施形態では、陽極21を支持する支持部材26の幅W3も、基材1の幅W2よりも小さく、基材1の端部が支持部材26からも外方に突出している。
そのため、基材1の絶縁層11の他面と金属板211との間に供給された電解めっき液Lは、絶縁層11上の導電層12の端部や側面に接触することなく、めっき槽24側に落下し、めっき槽24で回収される。これにより、導電層12に、めっきが析出してしまうことを抑制することができる。
As shown in FIG. 2, the electroplating solution L supplied between the other surface of the insulating layer 11 of the substrate 1 and the metal plate 211 is the outer end of the metal plate 211 (on the side opposite to the through groove 262 side). ) From the other side of the insulating layer 11 and falls due to its own weight.
Here, as described above, the width W <b> 1 of the anode 21 is smaller than the width W <b> 2 of the substrate 1, and the end portion of the substrate 1 is larger than the end portion of the anode 21 in plan view from above the plating tank 24. It protrudes in a direction (outward) orthogonal to the substrate conveyance direction. Furthermore, in the present embodiment, the width W3 of the support member 26 that supports the anode 21 is also smaller than the width W2 of the base material 1, and the end portion of the base material 1 projects outward from the support member 26.
Therefore, the electrolytic plating solution L supplied between the other surface of the insulating layer 11 of the substrate 1 and the metal plate 211 does not come into contact with the end portion or the side surface of the conductive layer 12 on the insulating layer 11 and is a plating tank. It falls to the 24 side and is collected in the plating tank 24. Thereby, it can suppress that plating deposits on the conductive layer 12.

なお、めっき槽24で回収した電解めっき液Lは、再度、電解めっき液供給部23により、貫通溝262から、基材1側に向かって流されることとなる。
めっき槽24では、図示しないが、調整手段により、定期的に電解めっき液を分析し、電解めっき液L中の各成分の濃度を調整してもよい。
本実施形態では、基材1は、停止することなく、陽極21上を通過する。基材1が陽極21上を通過する間に貫通孔111内にめっきが施される。ただし、基材1は、陽極21上で一時停止しながら、複数の陽極21上を通過してもよい。
The electrolytic plating solution L collected in the plating tank 24 is again flowed from the through groove 262 toward the substrate 1 by the electrolytic plating solution supply unit 23.
In the plating tank 24, although not shown, the electrolytic plating solution may be periodically analyzed by the adjusting means to adjust the concentration of each component in the electrolytic plating solution L.
In the present embodiment, the substrate 1 passes over the anode 21 without stopping. Plating is performed in the through hole 111 while the substrate 1 passes over the anode 21. However, the substrate 1 may pass over the plurality of anodes 21 while being temporarily stopped on the anodes 21.

貫通孔111内部にめっきが施された基材1は、水洗され、貫通孔111内部にめっきが施された基材1が完成する。
その後、必要に応じて、基材1を切断し、基材1の絶縁層11の他面側に金属膜を貼り付ける。その後、導電層12および前記金属膜を選択的に除去して回路層を形成し、回路基板を得る。この回路基板はフレキシブル回路基板である。
The base material 1 plated in the through hole 111 is washed with water, and the base material 1 plated in the through hole 111 is completed.
Then, the base material 1 is cut | disconnected as needed and a metal film is affixed on the other surface side of the insulating layer 11 of the base material 1. FIG. Thereafter, the conductive layer 12 and the metal film are selectively removed to form a circuit layer to obtain a circuit board. This circuit board is a flexible circuit board.

次に、本実施形態の作用効果について説明する。
本実施形態では、絶縁層11の他面と陽極21との間の電解めっき液Lを、絶縁層11の他面よりも下側に流しているので、絶縁層11の一面上に設けられた導電層12の側面に電解めっき液Lが付着し、導電層12の側面にめっきが析出してしまうことを抑制できる。これにより、貫通孔111内部に安定的にめっきを施すことができる。
特に、本実施形態では、基材1と陽極21とを対向させた際に、陽極21の幅W1は、基材1の幅W2よりも小さく、めっき槽24上方からの平面視において、基材1の端部が、陽極21の端部よりも、基材搬送方向と直交する方向(外方)に突出している。さらに、本実施形態では、陽極21を支持する支持部材26の幅W3も、基材1の幅W2よりも小さく、基材1の幅方向の端部が支持部材26からも外方に突出している。
従って、陽極21と、絶縁層11との間の電解めっき液Lが、絶縁層11の端部に接触せずに、めっき槽24側に排出されることとなるので、導電層12の側面にめっきが析出してしまうことを確実に抑制できる。
Next, the effect of this embodiment is demonstrated.
In the present embodiment, since the electrolytic plating solution L between the other surface of the insulating layer 11 and the anode 21 flows below the other surface of the insulating layer 11, it is provided on one surface of the insulating layer 11. It can suppress that the electroplating liquid L adheres to the side surface of the conductive layer 12, and plating deposits on the side surface of the conductive layer 12. Thereby, it is possible to stably plate the inside of the through hole 111.
In particular, in this embodiment, when the base material 1 and the anode 21 are opposed to each other, the width W1 of the anode 21 is smaller than the width W2 of the base material 1, and the base material is viewed in plan view from above the plating tank 24. One end portion projects beyond the end portion of the anode 21 in a direction (outward) perpendicular to the substrate transport direction. Furthermore, in this embodiment, the width W3 of the support member 26 that supports the anode 21 is also smaller than the width W2 of the base material 1, and the end in the width direction of the base material 1 protrudes outward from the support member 26 as well. Yes.
Therefore, the electrolytic plating solution L between the anode 21 and the insulating layer 11 is discharged to the plating tank 24 side without coming into contact with the end of the insulating layer 11. It can suppress reliably that plating will precipitate.

また、前述したような従来の製造方法では、導電層にめっきが析出してしまうという課題があった。この課題を解決するために、例えば、基材が非連続状形状の場合には、導電層側に樹脂などの絶縁体板を当てたうえで、回路基板の外周を絶縁体の粘着テープなどで封止することにより導電層表面および側面をめっき液から隔離をしてめっきをおこなう方法や、基材が連続状形状の場合には導電層およびその側面すべてを連続状絶縁粘着テープで被覆するなどの方法が考えられる。
しかしながら、これらの方法はいずれも、めっき前に粘着テープの貼り付け、さらにめっき後の引き剥がし作業に多くの手間がかかり生産性が向上しない問題があった。
これに対し、本実施形態では、基材1の絶縁層11の他面(導電層が設けられた面と反対側の面)と、陽極21との間に電解めっき液Lを流し、貫通孔111内にめっき膜を形成している。そして、電解めっき液Lを絶縁層11の他面よりも下方に排出している。
これにより、絶縁層11の一面に設けられた導電層12には、電解めっき液Lが接触しないので、導電層12を絶縁性のテープ等で被覆しなくてもよい。そのため、絶縁層11の貫通孔111内へのめっき処理にかかる手間を省くことができ、効率よくめっきを行うことができる。
Further, the conventional manufacturing method as described above has a problem that plating is deposited on the conductive layer. In order to solve this problem, for example, when the base material has a discontinuous shape, an insulating plate such as a resin is applied to the conductive layer side, and then the outer periphery of the circuit board is covered with an insulating adhesive tape or the like. Sealing the surface and side surfaces of the conductive layer from the plating solution by sealing, or if the substrate has a continuous shape, covering the conductive layer and all of its side surfaces with a continuous insulating adhesive tape, etc. Can be considered.
However, both of these methods have a problem in that productivity is not improved because a lot of work is required for attaching the adhesive tape before plating and further peeling off after plating.
On the other hand, in this embodiment, the electrolytic plating solution L is allowed to flow between the other surface of the insulating layer 11 of the substrate 1 (the surface opposite to the surface on which the conductive layer is provided) and the anode 21, A plating film is formed in 111. Then, the electrolytic plating solution L is discharged below the other surface of the insulating layer 11.
Thereby, since the electroplating liquid L does not contact the conductive layer 12 provided on one surface of the insulating layer 11, the conductive layer 12 does not need to be covered with an insulating tape or the like. Therefore, it is possible to save time and effort for the plating process in the through hole 111 of the insulating layer 11 and to perform plating efficiently.

さらに、本実施形態では、電解めっき液Lを、陽極21を構成する金属板211間の隙間(貫通溝262)から、基材1側に向かって上方に流している。このようにすることで、基材1の絶縁層11と陽極21との間に電解めっき液Lを安定的に流すことができる。
たとえば、図6の矢印に示すように、基材搬送方向基端側から、基材1と、陽極21との間の隙間に電解めっき液を流すことも考えられる。しかしながら、めっき槽24上での搬送距離を長くした場合には、基材1の搬送方向基端側から、搬送方向先端側へむけて、電解めっき液Lを非常に勢いよく流さなければならず、基材1と陽極21との間に安定的に電解めっき液Lを供給することが難しくなる。
これに対し、本実施形態では、基材搬送方向と直交する方向に隣り合う一対の金属板211間に隙間を形成し、この隙間から電解めっき液を基材1と陽極21との間に供給しているため、電解めっき液Lを非常に勢いよく流さなくても、基材1の絶縁層11と陽極21との間に電解めっき液Lを安定的に流すことができる。
Furthermore, in this embodiment, the electrolytic plating solution L is allowed to flow upward toward the base material 1 from the gaps (through grooves 262) between the metal plates 211 constituting the anode 21. By doing in this way, the electroplating liquid L can be stably poured between the insulating layer 11 and the anode 21 of the base material 1.
For example, as indicated by an arrow in FIG. 6, it is conceivable to flow an electrolytic plating solution from the base end side in the substrate transport direction into the gap between the substrate 1 and the anode 21. However, when the transport distance on the plating tank 24 is increased, the electrolytic plating solution L must flow very vigorously from the base end side in the transport direction of the substrate 1 toward the front end side in the transport direction. In addition, it becomes difficult to stably supply the electrolytic plating solution L between the substrate 1 and the anode 21.
On the other hand, in this embodiment, a gap is formed between a pair of metal plates 211 adjacent in a direction orthogonal to the substrate conveyance direction, and the electrolytic plating solution is supplied between the substrate 1 and the anode 21 from this gap. Therefore, even if the electrolytic plating solution L does not flow very vigorously, the electrolytic plating solution L can flow stably between the insulating layer 11 and the anode 21 of the substrate 1.

さらに、本実施形態では、陽極21の基材搬送方向と直交する方向に隣り合う金属板211間の隙間の位置(本実施形態では、貫通溝262)が、基材1の幅W2方向の略中心位置にあるので、電解めっき液Lを貫通溝262から、基材1の端部側(基材搬送方向に沿った端部側)に略均等に流すことができ、めっきを安定的に実施することができる。   Furthermore, in the present embodiment, the position of the gap between the metal plates 211 adjacent in the direction orthogonal to the substrate transport direction of the anode 21 (in this embodiment, the through groove 262) is substantially the width W2 direction of the substrate 1. Since it is in the center position, the electrolytic plating solution L can be made to flow substantially uniformly from the through groove 262 to the end side of the base material 1 (end side along the base material transport direction), and the plating can be performed stably. can do.

なお、本発明は前述の実施形態に限定されるものではなく、本発明の目的を達成できる範囲での変形、改良等は本発明に含まれるものである。
たとえば、前記実施形態では、陽極21を複数枚の金属板211で構成していたが、これに限られるものではない。たとえば、図7に示すように、陽極210を一枚の金属板212で構成してもよい。このようにすることで、めっき装置の構成を簡略化することができる。この場合には、金属板212に貫通孔212Aを形成して、貫通孔212Aから電解めっき液Lを基材1側に供給すればよい。
ただし、前記実施形態のように、陽極21を複数枚の金属板211で構成すれば、各金属板211と、陰極20との間に流れる電流を異なる値とし、制御することが可能となる。
貫通孔111は断面テーパ形状であるため、めっきが進むにつれて、めっき面積が増加することとなる。そのため、たとえば、基材1の搬送方向基端側にある金属板211と、陰極20との間に流れる電流値を、基材1の搬送方向先端側にある金属板211と陰極20との間に流れる電流値よりも小さくし、被めっき面における電流密度を一定なものとすることができる。具体的には図8に示すように、制御部27(ここでは抵抗)を設け、各金属板211と陰極20との間に流れる電流量を異なるものとすることができる。
It should be noted that the present invention is not limited to the above-described embodiments, and modifications, improvements, and the like within the scope that can achieve the object of the present invention are included in the present invention.
For example, in the above embodiment, the anode 21 is composed of a plurality of metal plates 211, but the present invention is not limited to this. For example, as shown in FIG. 7, the anode 210 may be composed of a single metal plate 212. By doing in this way, the structure of a plating apparatus can be simplified. In this case, a through hole 212A may be formed in the metal plate 212, and the electrolytic plating solution L may be supplied from the through hole 212A to the substrate 1 side.
However, if the anode 21 is composed of a plurality of metal plates 211 as in the above embodiment, the current flowing between each metal plate 211 and the cathode 20 can be set to different values and controlled.
Since the through hole 111 has a tapered cross section, the plating area increases as the plating progresses. Therefore, for example, the value of the current flowing between the metal plate 211 on the base end side in the transport direction of the base material 1 and the cathode 20 is set between the metal plate 211 on the front end side in the transport direction of the base material 1 and the cathode 20. The current density on the surface to be plated can be made constant by making it smaller than the value of the current flowing through the surface. Specifically, as shown in FIG. 8, a control unit 27 (in this case, a resistor) can be provided to vary the amount of current flowing between each metal plate 211 and the cathode 20.

また、前記実施形態では、貫通孔111は断面テーパ状であるとしたが、これに限られず、貫通孔111の一方の開口から、他方の開口に向かって径が均等である形状、たとえば、円柱状としてもよい。
さらに、前記実施形態では、電解めっき装置2は、陽極21上で基材1を搬送しながら、連続的にめっきを行うものであるとしたが、これに限らず、陽極21上で基材1を停止させた状態でめっきを行ってもよい。
さらに、前記実施形態では電解めっき装置2は連続状の基材を搬送するために搬送ローラーを具備しているが、これに限らず、非連続状の基材専用の装置として搬送ローラーを具備していなくても良い。たとえば、枚葉式の電解めっき装置としてもよい。
また、基材1は、フレキシブル回路基板用のものとしたが、これに限らず、リジッド基板用のものであってもよい。
In the above embodiment, the through hole 111 has a tapered cross section. However, the shape is not limited to this, and a shape having a uniform diameter from one opening of the through hole 111 toward the other opening, for example, a circle. It may be columnar.
Furthermore, in the said embodiment, although the electroplating apparatus 2 performed plating continuously, conveying the base material 1 on the anode 21, not only this but the base material 1 on the anode 21 is mentioned. The plating may be performed in a state in which is stopped.
Further, in the above embodiment, the electroplating apparatus 2 includes a transport roller for transporting a continuous substrate, but is not limited thereto, and includes a transport roller as a device dedicated to a non-continuous substrate. It does not have to be. For example, a single-wafer type electroplating apparatus may be used.
Moreover, although the base material 1 was for flexible circuit boards, it is not limited to this, and may be for rigid boards.

1 基材
2 電解めっき装置
11 絶縁層
12 導電層
20 陰極
21 陽極
23 めっき液供給部
24 めっき槽
25 搬送ローラ
26 支持部材
27 制御部
28 板材
111 貫通孔
210 陽極
211 金属板
212A 貫通孔
212 金属板
261 凹部
262 貫通溝
281貫通穴
H 距離
L 電解めっき液
M 配管
P ポンプ
W1 幅
W2 幅
W3 幅
DESCRIPTION OF SYMBOLS 1 Base material 2 Electrolytic plating apparatus 11 Insulating layer 12 Conductive layer 20 Cathode 21 Anode 23 Plating solution supply part 24 Plating tank 25 Conveyance roller 26 Support member 27 Control part 28 Plate material 111 Through-hole 210 Anode 211 Metal plate 212A Through-hole 212 Metal plate 261 Recess 262 Through groove 281 Through hole H Distance L Electroplating solution M Pipe P Pump W1 Width W2 Width W3 Width

Claims (10)

貫通孔が形成された絶縁層と、この絶縁層の一面に設けられ、前記貫通孔の一方の開口を塞ぐ導電層とを有する基材を用意する工程と、
前記導電層に陰極を接続するとともに、前記絶縁層の他面が陽極と対向するように、前記陽極の上方に前記基材を配置する工程と、
前記絶縁層の他面と前記陽極との間に電解めっき液を流して、前記貫通孔内にめっき膜を形成するとともに、前記絶縁層の他面と前記陽極との間の前記電解めっき液を前記絶縁層の他面よりも下方に排出する工程とを含むめっき方法。
Providing a base material having an insulating layer in which a through hole is formed and a conductive layer provided on one surface of the insulating layer and closing one opening of the through hole;
Connecting the cathode to the conductive layer and disposing the substrate above the anode so that the other surface of the insulating layer faces the anode;
An electrolytic plating solution is allowed to flow between the other surface of the insulating layer and the anode to form a plating film in the through hole, and the electrolytic plating solution between the other surface of the insulating layer and the anode is used. And a step of discharging below the other surface of the insulating layer.
請求項1に記載のめっき方法において、
前記陽極と、前記基材とを対向配置させた際に、前記絶縁層の端部は、前記陽極の端部よりも外方に突出しており、
前記絶縁層の他面と前記陽極との間の前記電解めっき液は、前記絶縁層の前記端部に接触せずに、前記絶縁層の他面よりも下方に排出されるめっき方法。
The plating method according to claim 1,
When the anode and the base material are arranged to face each other, the end portion of the insulating layer protrudes outward from the end portion of the anode,
The plating method in which the electrolytic plating solution between the other surface of the insulating layer and the anode is discharged below the other surface of the insulating layer without contacting the end portion of the insulating layer.
請求項1または2に記載のめっき方法において、
前記陽極には、前記めっき液を前記絶縁層側にむかって流す開口が形成され、
前記陽極の開口を介して、前記陽極側から前記絶縁層の他面側に向かって電解めっき液を流し、前記絶縁層の他面と前記陽極との間に電解めっき液を流すめっき方法。
In the plating method according to claim 1 or 2,
The anode is formed with an opening for flowing the plating solution toward the insulating layer,
A plating method in which an electrolytic plating solution is allowed to flow from the anode side toward the other surface side of the insulating layer through the opening of the anode, and the electrolytic plating solution is allowed to flow between the other surface of the insulating layer and the anode.
請求項3に記載のめっき方法において、
前記陽極は、複数の金属板で構成され、複数の金属板間には前記開口となる隙間が形成されており、
前記隙間を介して、前記陽極側から前記絶縁層の他面側に向かって電解めっき液を流すめっき方法。
In the plating method according to claim 3,
The anode is composed of a plurality of metal plates, and a gap serving as the opening is formed between the plurality of metal plates,
A plating method in which an electrolytic plating solution is allowed to flow from the anode side toward the other surface side of the insulating layer through the gap.
請求項1乃至4のいずれかに記載のめっき方法において、
前記絶縁層の他面よりも下方に排出された電解めっき液を回収して、再度、前記絶縁層の他面と前記陽極との間に電解めっき液を流すめっき方法。
In the plating method according to any one of claims 1 to 4,
A plating method in which the electrolytic plating solution discharged below the other surface of the insulating layer is collected, and the electrolytic plating solution is again flowed between the other surface of the insulating layer and the anode.
請求項1乃至5のいずれかに記載のめっき方法において、
前記陽極上で、前記基材を搬送しながら前記絶縁層の前記貫通孔内に電解めっきを行うめっき方法。
In the plating method according to any one of claims 1 to 5,
A plating method in which electrolytic plating is performed in the through hole of the insulating layer while transporting the base material on the anode.
貫通孔が形成された絶縁層と、この絶縁層の一面に設けられ、前記貫通孔の一方の開口を塞ぐ導電層とを有する基材の前記貫通孔内に電解めっきを行うための電解めっき装置であって、
前記導電層に接続される陰極と、
前記基材の他面と対向するように前記基材の下方に配置される前記陽極と、
前記基材の他面と、前記陽極との間に電解めっきを流す電解めっき液供給部とを備え、
当該電解めっき装置は、前記電解めっき液供給部により、前記絶縁層の他面と前記陽極との間に電解めっき液を流すとともに、前記絶縁層の他面と、前記陽極との間の電解めっき液を前記絶縁層の他面よりも下方に排出するように構成される電解めっき装置。
Electrolytic plating apparatus for performing electroplating in the through-hole of a base material having an insulating layer in which a through-hole is formed and a conductive layer provided on one surface of the insulating layer and blocking one opening of the through-hole Because
A cathode connected to the conductive layer;
The anode disposed below the substrate so as to face the other surface of the substrate;
An electroplating solution supply section for flowing electroplating between the other surface of the substrate and the anode;
In the electrolytic plating apparatus, the electrolytic plating solution is supplied between the other surface of the insulating layer and the anode by the electrolytic plating solution supply unit, and the electrolytic plating is performed between the other surface of the insulating layer and the anode. An electrolytic plating apparatus configured to discharge the liquid below the other surface of the insulating layer.
請求項7に記載の電解めっき装置において、
前記陽極には、前記めっき液を前記絶縁層側にむかって流す開口が形成され、
前記陽極の開口を介して、前記陽極側から前記絶縁層の他面側に向かって電解めっき液を流し、前記絶縁層の他面と前記陽極との間に電解めっき液を流すように構成される電解めっき装置。
In the electroplating apparatus according to claim 7,
The anode is formed with an opening for flowing the plating solution toward the insulating layer,
An electrolytic plating solution is allowed to flow from the anode side toward the other surface side of the insulating layer through the opening of the anode, and the electrolytic plating solution is allowed to flow between the other surface of the insulating layer and the anode. Electroplating equipment.
請求項8に記載の電解めっき装置において、
前記陽極は、複数の金属板で構成され、
前記複数の金属板間には前記開口となる隙間が形成されており、
前記隙間から電解めっき液を上方に向かって流すことで、前記絶縁層の他面と前記陽極との間に電解めっき液を流すように構成される電解めっき装置。
The electroplating apparatus according to claim 8,
The anode is composed of a plurality of metal plates,
A gap to be the opening is formed between the plurality of metal plates,
An electrolytic plating apparatus configured to cause an electrolytic plating solution to flow between the other surface of the insulating layer and the anode by flowing an electrolytic plating solution upward from the gap.
請求項7乃至9のいずれかに記載の電解めっき装置において、
前記基材を前記陽極上で搬送する搬送部を備える電解めっき装置。
In the electroplating apparatus in any one of Claims 7 thru | or 9,
An electroplating apparatus comprising a transport unit for transporting the base material on the anode.
JP2010014142A 2010-01-26 2010-01-26 Plating method and electroplating apparatus Pending JP2011153334A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010014142A JP2011153334A (en) 2010-01-26 2010-01-26 Plating method and electroplating apparatus
PCT/JP2011/000191 WO2011093023A1 (en) 2010-01-26 2011-01-17 Plating method and electrolytic plating device
TW100102585A TW201139753A (en) 2010-01-26 2011-01-25 Plating method and electrolysis plating device

Applications Claiming Priority (1)

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JP2010014142A JP2011153334A (en) 2010-01-26 2010-01-26 Plating method and electroplating apparatus

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