[go: up one dir, main page]

JP2011095143A - Infrared sensor - Google Patents

Infrared sensor Download PDF

Info

Publication number
JP2011095143A
JP2011095143A JP2009250285A JP2009250285A JP2011095143A JP 2011095143 A JP2011095143 A JP 2011095143A JP 2009250285 A JP2009250285 A JP 2009250285A JP 2009250285 A JP2009250285 A JP 2009250285A JP 2011095143 A JP2011095143 A JP 2011095143A
Authority
JP
Japan
Prior art keywords
infrared sensor
sensor element
resin
temperature
resin package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009250285A
Other languages
Japanese (ja)
Inventor
Shuichi Nagano
修一 長野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Electronics Co Ltd
Original Assignee
Asahi Kasei Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Kasei Electronics Co Ltd filed Critical Asahi Kasei Electronics Co Ltd
Priority to JP2009250285A priority Critical patent/JP2011095143A/en
Publication of JP2011095143A publication Critical patent/JP2011095143A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a compact infrared sensor which can perform temperature correction with high accuracy at high speed. <P>SOLUTION: The infrared sensor includes a temperature sensor element, a quantum-type infrared sensor element that receives the external infrared ray from outside, a resin package encapsulating the infrared sensor element and the temperature sensor element, and an opening provided on the resin package to guide the infrared ray to a light receiving surface of the infrared sensor element. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は赤外線センサに関し、より詳細には、赤外線を検知して、温度の測定、人・物の検出、ガス濃度の検出等をする赤外線センサであって、温度補正を精度よく高速に行える小型の赤外線センサに関する。   The present invention relates to an infrared sensor, and more specifically, an infrared sensor that detects infrared rays to measure temperature, detect people / things, detect gas concentration, etc. The present invention relates to an infrared sensor.

一般に、赤外線センサは、赤外線を検知して、対象物の温度を非接触で測定することができる。赤外線センサは、人体検出、非接触温度測定、及び大気中のガス濃度測定などの様々な用途で用いられている。従来の赤外線センサを使った温度計測の技術としては、特許文献1などが知られている。赤外線センサの視野部において樹脂と金属とをうまく組み合わせて、導光管となる金属部の温度が外界からの影響を受け難くなる構造にするとともに、視野部からの直接の影響を補正するために補正用温度計を視野部へ設けることにより、高精度な温度センサを実現している。また、特許文献2及び特許文献3のように、動的にパッケージの温度を制御して赤外線センサの温度変化を極力減らすような手法が知られている。また、特許文献4のようにサーミスタを複数利用して導光管の影響を補正する手法が知られている。   In general, an infrared sensor can detect infrared rays and measure the temperature of an object in a non-contact manner. Infrared sensors are used in various applications such as human body detection, non-contact temperature measurement, and atmospheric gas concentration measurement. As a temperature measurement technique using a conventional infrared sensor, Patent Document 1 and the like are known. In order to correct the direct influence from the visual field while making the structure that makes the temperature of the metal part that becomes the light guide tube less affected by the outside world by combining resin and metal well in the visual field of the infrared sensor A highly accurate temperature sensor is realized by providing a correction thermometer in the visual field. In addition, as in Patent Document 2 and Patent Document 3, a method is known in which the temperature of the infrared sensor is reduced as much as possible by dynamically controlling the temperature of the package. Further, a method of correcting the influence of the light guide tube using a plurality of thermistors as in Patent Document 4 is known.

一般に、精度の高い温度計及び人感センサを実現するために、焦電センサ又はサーモパイル等の赤外線センサ素子をCANパッケージに入れ、さらに熱伝導性を高めるためにその周囲を金属ブロックなどで覆うことにより、比較的大型な構造となることが知られている。   In general, in order to realize a highly accurate thermometer and human sensor, an infrared sensor element such as a pyroelectric sensor or a thermopile is placed in a CAN package, and its periphery is covered with a metal block or the like to further increase thermal conductivity. Thus, it is known that the structure becomes relatively large.

特開平08−191800号公報Japanese Patent Laid-Open No. 08-191800 特開平11−155819号公報JP-A-11-155819 特許第3346583号公報Japanese Patent No. 3346583 特開2007−248201号公報JP 2007-248201 A

このように、高精度の温度計及び人感センサにおいては、焦電センサ又はサーモパイル等の赤外線センサ素子を熱容量の大きいCANパッケージに内蔵したものを利用されることが多い。これらの周辺部には、赤外線センサの受光面に対して入射する赤外線の角度を制限するサイズ及び熱容量の大きい視野制限物、並びにヒートシンク等の外付け部品を装着しなければならず、小型化をすることが困難であった。   As described above, high-accuracy thermometers and human sensors are often used in which an infrared sensor element such as a pyroelectric sensor or a thermopile is incorporated in a CAN package having a large heat capacity. These peripheral parts must be equipped with external size components that limit the angle of infrared rays incident on the light receiving surface of the infrared sensor and have a large heat capacity, and external parts such as a heat sink. It was difficult to do.

本発明は、非接触温度計用途、人感センサ用途、ガスセンサ用途等で用いる赤外線センサであって、小型で高速かつ高精度な温度補償が可能な赤外線センサを提供することを目的とする。   SUMMARY OF THE INVENTION An object of the present invention is to provide an infrared sensor that is used for non-contact thermometer applications, human sensor applications, gas sensor applications, and the like, and is small, capable of temperature compensation with high speed and high accuracy.

このような課題を解決するために、請求項1に記載の赤外線センサは、温度センサ素子と、外部からの赤外線を受光する量子型の赤外線センサ素子と、前記赤外線センサ素子と前記温度センサ素子とを包み込む樹脂パッケージと、赤外線を前記赤外線センサ素子の受光面に導くように前記樹脂パッケージに設けられた開口部分とを備えることを特徴とする。   In order to solve such a problem, the infrared sensor according to claim 1 includes a temperature sensor element, a quantum infrared sensor element that receives infrared rays from the outside, the infrared sensor element, and the temperature sensor element. And an opening provided in the resin package so as to guide infrared rays to a light receiving surface of the infrared sensor element.

請求項2に記載の赤外線センサは、請求項1に記載の赤外線センサであって、前記温度センサ素子は、前記赤外線センサ素子と接するように配置されていることを特徴とする。   An infrared sensor according to a second aspect is the infrared sensor according to the first aspect, wherein the temperature sensor element is disposed in contact with the infrared sensor element.

請求項3に記載の赤外線センサは、請求項1又は2に記載の赤外線センサであって、前記開口部分の側面は、前記赤外線センサ素子と熱的に結合された金属フレームで覆われていることを特徴とする。   The infrared sensor according to claim 3 is the infrared sensor according to claim 1 or 2, wherein a side surface of the opening is covered with a metal frame thermally coupled to the infrared sensor element. It is characterized by.

請求項4に記載の赤外線センサは、請求項1又は2に記載の赤外線センサであって、前記開口部分の側面を囲むように、前記赤外線センサ素子と熱的に結合された樹脂層を設け、前記樹脂層は、前記樹脂層の周囲の前記樹脂パッケージの樹脂より熱伝導率が高いことを特徴とする。   The infrared sensor according to claim 4 is the infrared sensor according to claim 1 or 2, wherein a resin layer thermally coupled to the infrared sensor element is provided so as to surround a side surface of the opening portion, The resin layer has a higher thermal conductivity than the resin of the resin package around the resin layer.

請求項5に記載の赤外線センサは、請求項1から4のいずれかに記載の赤外線センサであって、前記樹脂パッケージの前記開口部分の深さを5mm以下としたことを特徴とする。   An infrared sensor according to a fifth aspect is the infrared sensor according to any one of the first to fourth aspects, wherein a depth of the opening portion of the resin package is 5 mm or less.

請求項6に記載の赤外線センサは、請求項1から5のいずれかに記載の赤外線センサであって、前記樹脂パッケージにおいて前記開口部分を有する面に対向する面以外の面のいずれかの場所に、前記赤外線センサ素子及び前記温度センサ素子を外部に露出させないように切り欠けられた複数の切り欠け部を設けることを特徴とする。   The infrared sensor according to claim 6 is the infrared sensor according to any one of claims 1 to 5, wherein the infrared ray sensor is provided at any location on a surface other than the surface facing the surface having the opening portion in the resin package. The infrared sensor element and the temperature sensor element are provided with a plurality of notches so as not to be exposed to the outside.

本発明に係る赤外線センサは、サイズ及び熱容量の大きい視野制限物、並びにヒートシンク等を装着する必要がないため、赤外線センサ全体を小型化することができる。そのため、特別な光学系を用意することなく、本願発明に係る赤外線センサ及び後処理の信号処理系だけで、非常に小型の非接触温度計を構成することができる。したがって、PDA端末、携帯電話、腕時計及び小型電子機器などに容易に非接触温度計を組み込むことができる。さらに、使用する赤外線センサがサーモパイル又は焦電センサ等のような熱型の赤外線センサでなく、量子型の赤外線センサであるため、センサ自身の応答性が高速であり、熱容量の大きいCANパッケージを必要としないことにより、赤外線センサ自身の温度も変化も速いため、赤外線センサとパッケージの温度の追随性がよく、温度補正を高速かつ精度よく行うことができる。   The infrared sensor according to the present invention does not need to be fitted with a field-of-view limiter having a large size and a large heat capacity, and a heat sink, so that the entire infrared sensor can be miniaturized. Therefore, a very small non-contact thermometer can be configured only by the infrared sensor and the post-processing signal processing system according to the present invention without preparing a special optical system. Therefore, a non-contact thermometer can be easily incorporated in a PDA terminal, a mobile phone, a wristwatch, a small electronic device, and the like. Furthermore, since the infrared sensor to be used is not a thermal infrared sensor such as a thermopile or pyroelectric sensor, but a quantum infrared sensor, the sensor itself has a high responsiveness and requires a CAN package with a large heat capacity. In this case, since the temperature and change of the infrared sensor itself are fast, the temperature between the infrared sensor and the package is good and temperature correction can be performed at high speed and with high accuracy.

本発明に係る赤外線センサは、開口部分の側面を覆うように、量子型赤外線センサ素子と熱的に結合された金属フレームを設けることにより、量子型赤外線センサ素子と樹脂パッケージとの間の熱伝導性を高めることができ、量子型赤外線センサ素子と開口部分の温度の追随性がよいため、温度補正を高速に精度よく行うことができる。   The infrared sensor according to the present invention provides a heat conduction between the quantum infrared sensor element and the resin package by providing a metal frame thermally coupled to the quantum infrared sensor element so as to cover the side surface of the opening. The temperature can be improved, and the temperature of the quantum infrared sensor element and the opening portion can be well tracked, so that temperature correction can be performed at high speed and with high accuracy.

本発明に係る赤外線センサは、開口部分の側面を囲むように量子型赤外線センサ素子と熱的に結合された樹脂層を設け、該樹脂層がその周囲の樹脂パッケージの樹脂より熱伝導率が高くなるような構成とすることにより、外部の影響を受け難い赤外線センサを構成することができる。   The infrared sensor according to the present invention is provided with a resin layer thermally coupled to the quantum infrared sensor element so as to surround the side surface of the opening, and the resin layer has a higher thermal conductivity than the resin of the surrounding resin package. By adopting such a configuration, it is possible to configure an infrared sensor that is less susceptible to external influences.

本発明に係る赤外線センサは、樹脂パッケージの開口部分の深さを5mm以下とすることにより、量子型赤外線センサ素子と樹脂パッケージとの間の熱伝導率を高め、量子型赤外線センサ素子と樹脂パッケージとの温度差を少なくすることができ、温度補正を高速に精度よく行うことができる。   The infrared sensor according to the present invention increases the thermal conductivity between the quantum infrared sensor element and the resin package by setting the depth of the opening portion of the resin package to 5 mm or less, and the quantum infrared sensor element and the resin package. And temperature correction can be performed at high speed and with high accuracy.

本発明に係る赤外線センサは、樹脂パッケージの表面に切り欠け部を設け、外気との接触面をさらに増加させることによって、赤外線センサ素子自身の温度と樹脂パッケージ部とが常に同じ温度となる。その結果、樹脂パッケージに内蔵した温度センサ素子のみで必要な赤外線センサ素子の温度補正を迅速かつ精度よく行うことができる。   In the infrared sensor according to the present invention, by providing a notch portion on the surface of the resin package and further increasing the contact surface with the outside air, the temperature of the infrared sensor element itself and the resin package portion are always the same temperature. As a result, the necessary temperature correction of the infrared sensor element can be performed quickly and accurately with only the temperature sensor element incorporated in the resin package.

本発明に係る赤外線センサの斜視図である。It is a perspective view of the infrared sensor which concerns on this invention. 本発明に係る赤外線センサの断面図である。It is sectional drawing of the infrared sensor which concerns on this invention. 本発明の実施例1に係る赤外線センサの断面図である。It is sectional drawing of the infrared sensor which concerns on Example 1 of this invention. 本発明に係る、小型化した例示的な赤外線センサの断面図である。1 is a cross-sectional view of a miniaturized exemplary infrared sensor according to the present invention. 本発明の実施例2に係る赤外線センサの断面図である。It is sectional drawing of the infrared sensor which concerns on Example 2 of this invention. 本発明の実施例3に係る赤外線センサの断面図である。It is sectional drawing of the infrared sensor which concerns on Example 3 of this invention.

以下、添付図面を参照して本発明の実施の形態について説明する。   Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

図1は、本発明に係る赤外線センサの斜視図である。図2は、本発明に係る赤外線センサの断面図である。図1、2に示すように、本発明に係る赤外線センサは、樹脂パッケージ1と、樹脂パッケージ1内に包み込まれた量子型赤外線センサ素子4及び温度センサ素子5とを備える。樹脂パッケージ1には、開口部分2が設けられている。   FIG. 1 is a perspective view of an infrared sensor according to the present invention. FIG. 2 is a cross-sectional view of an infrared sensor according to the present invention. As shown in FIGS. 1 and 2, the infrared sensor according to the present invention includes a resin package 1, and a quantum infrared sensor element 4 and a temperature sensor element 5 encased in the resin package 1. The resin package 1 is provided with an opening 2.

量子型赤外線センサ素子4及び温度センサ素子5は、薄型の樹脂パッケージ1に埋め込まれている。温度センサ素子5は、量子型赤外線センサ素子4に近接するように配置されている。開口部分2は、量子型赤外線センサ素子4の受光面3上の樹脂パッケージ1をくり貫くことによって設けられる。この開口部分2は、量子型赤外線センサ素子4の受光面3へ光を導く導光管及び視野を絞る視野制限部の役割を果たす。開口部分2の形状は特に制限がなく、四角形でも丸型でもよい。後述するように、必要に応じて、開口部分2を塞ぐように樹脂パッケージ1に薄膜の光学フィルタを取り付けてもよい。開口部分2は、複数あってもよく、開口部分2の深さは、数mm以下である。   The quantum infrared sensor element 4 and the temperature sensor element 5 are embedded in a thin resin package 1. The temperature sensor element 5 is disposed so as to be close to the quantum infrared sensor element 4. The opening 2 is provided by cutting through the resin package 1 on the light receiving surface 3 of the quantum infrared sensor element 4. The opening 2 serves as a light guide tube that guides light to the light receiving surface 3 of the quantum infrared sensor element 4 and a visual field limiter that narrows the visual field. The shape of the opening portion 2 is not particularly limited, and may be a square shape or a round shape. As will be described later, if necessary, a thin film optical filter may be attached to the resin package 1 so as to close the opening 2. There may be a plurality of the opening portions 2, and the depth of the opening portion 2 is several mm or less.

本発明に係る赤外線センサは、赤外線センサ素子の信号を増幅し、温度センサ素子からの温度信号から一意に決めた値を加減する信号処理回路と、信号処理回路とのインターフェース用の端子(図示せず)を備える。ここで、信号処理回路とは、赤外線センサ素子からの信号を増幅するとともに、温度センサ素子からの温度信号に基づき、補正演算を行う回路である。これにより、温度センサ素子の出力から赤外線センサ素子の出力の温度補正を容易に行うことができる。   An infrared sensor according to the present invention amplifies a signal of an infrared sensor element and adjusts a value uniquely determined from a temperature signal from the temperature sensor element, and a terminal for interface with the signal processing circuit (not shown) Prepared). Here, the signal processing circuit is a circuit that amplifies a signal from the infrared sensor element and performs a correction operation based on the temperature signal from the temperature sensor element. Thereby, temperature correction of the output of an infrared sensor element can be easily performed from the output of a temperature sensor element.

また、本発明に係る赤外線センサは、樹脂パッケージ1内に、量子型赤外線センサ素子4及び温度センサ素子5の信号を取り出す端子(図示せず)を備える構成としてもよい。つまり、信号処理回路部を別パッケージとしてもよい。   In addition, the infrared sensor according to the present invention may have a configuration in which a terminal (not shown) for extracting signals from the quantum infrared sensor element 4 and the temperature sensor element 5 is provided in the resin package 1. That is, the signal processing circuit unit may be a separate package.

さらに、後述するように、樹脂パッケージ1に切り欠き部分を複数設けた構造にしてもよい。これにより、表面積を大きくすることができ、より効果的に樹脂パッケージ1の温度と量子型赤外線センサ素子4の温度とを同一にすることができる。   Furthermore, as will be described later, the resin package 1 may have a structure in which a plurality of cutout portions are provided. Thereby, a surface area can be enlarged and the temperature of the resin package 1 and the temperature of the quantum type infrared sensor element 4 can be more effectively made the same.

さらに、開口部分2の最上部から樹脂パッケージ1の底部までの高さは、10mm以下とすることができる。これにより、パッケージの熱容量を小さくできることに加え、十分な視野制限を確保でき、近距離の非接触温度計としての使用が可能となる。   Furthermore, the height from the top of the opening 2 to the bottom of the resin package 1 can be 10 mm or less. Thereby, in addition to making it possible to reduce the heat capacity of the package, it is possible to ensure a sufficient field of view restriction and use it as a non-contact thermometer at a short distance.

以下、添付図面を参照して本発明の好適な実施例について説明する。   Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

図3は、本発明の実施例1に係る赤外線センサの断面図である。上記のように、量子型赤外線センサ素子4と温度センサ素子5とを薄型の樹脂パッケージ1に埋め込み、量子型赤外線センサ素子4の受光面3を露出するように樹脂パッケージ1に開口部分2を設ける。開口部分2は、視野制限部の役割を果たす。樹脂パッケージ1は、開口部分2の深さが5mm以下になるような薄型の樹脂パッケージ1とする。このような薄型の樹脂パッケージ1を用いることにより、開口部分2の側面の樹脂パッケージ1と量子型赤外線センサ素子4との温度差を小さくすることができる。図3では、開口部分2を塞ぐように、樹脂パッケージ1に5μm以下の波長をカットする光学フィルタが取りつけられている。量子型赤外線センサ素子4には、InSbを用いた室温動作型の赤外線センサ素子を用いた。   FIG. 3 is a cross-sectional view of the infrared sensor according to Embodiment 1 of the present invention. As described above, the quantum infrared sensor element 4 and the temperature sensor element 5 are embedded in the thin resin package 1, and the opening portion 2 is provided in the resin package 1 so that the light receiving surface 3 of the quantum infrared sensor element 4 is exposed. . The opening part 2 serves as a visual field restriction part. The resin package 1 is a thin resin package 1 in which the opening 2 has a depth of 5 mm or less. By using such a thin resin package 1, the temperature difference between the resin package 1 on the side surface of the opening 2 and the quantum infrared sensor element 4 can be reduced. In FIG. 3, an optical filter that cuts a wavelength of 5 μm or less is attached to the resin package 1 so as to close the opening 2. As the quantum infrared sensor element 4, a room temperature operation type infrared sensor element using InSb was used.

図3のように、開口部分2の側面を囲むように、量子型赤外線センサ素子4と熱的に結合された熱伝導性の高い樹脂層又は金属フレーム8を設けることができる。熱伝導性の高い樹脂層又は金属フレーム8において熱伝導性の高い樹脂をする場合、通常のPPS樹脂の熱伝導率は、0.4W/m・K程度であるが、樹脂に金属フィラーを入れるなどして、熱伝導率を数W/m・Kまで高めた樹脂が知られており、それを利用してもよい。   As shown in FIG. 3, a resin layer or metal frame 8 with high thermal conductivity that is thermally coupled to the quantum infrared sensor element 4 can be provided so as to surround the side surface of the opening portion 2. When a resin with high thermal conductivity or a resin with high thermal conductivity is used in the metal frame 8, the thermal conductivity of a normal PPS resin is about 0.4 W / m · K, but a metal filler is put into the resin. For example, a resin whose thermal conductivity is increased to several W / m · K is known and may be used.

さらに、近年では熱伝導率が25W/m・K程度まで高められた樹脂も知られている。そのような熱伝導性の高い樹脂を開口部分2の側面を囲むように設けることで、量子型赤外線センサ素子4の温度と開口部分2の側面の温度とをほぼ同じにすることができる。これにより、量子型赤外線センサ素子4と樹脂パッケージ1との間の熱伝導性を高めることができ、温度補正を高速に精度よく行うことができる。熱伝導性の高い樹脂層又は金属フレーム8において金属フレームを使用する場合も同様に、量子型赤外線センサ素子4と樹脂パッケージ1との間の熱伝導性を高めることができ、量子型赤外線センサ素子4と開口部分の温度の追随性がよいため、温度補正を高速に精度よく行うことができる。   Furthermore, in recent years, resins having a thermal conductivity increased to about 25 W / m · K are also known. By providing such a resin with high thermal conductivity so as to surround the side surface of the opening portion 2, the temperature of the quantum infrared sensor element 4 and the temperature of the side surface of the opening portion 2 can be made substantially the same. Thereby, the thermal conductivity between the quantum infrared sensor element 4 and the resin package 1 can be increased, and temperature correction can be performed at high speed and with high accuracy. Similarly, when a metal frame is used in the resin layer or the metal frame 8 having a high thermal conductivity, the thermal conductivity between the quantum infrared sensor element 4 and the resin package 1 can be increased, and the quantum infrared sensor element 4 and the temperature of the opening portion can be tracked well, so that temperature correction can be performed at high speed and with high accuracy.

外部からの熱伝導の影響を抑えるために、開口部分2の側面に、赤外線センサ素子と熱的に結合された特定の樹脂層を設け、その特定の樹脂層がその周囲の樹脂パッケージ1の樹脂より熱伝導率が高くなるような構成としてもよい。例えば、開口部分2の側面を囲むように熱伝導性の高い樹脂層を設け、それ以外の部分の樹脂パッケージ1には、熱伝導性の悪い樹脂を使用することができる。これにより、外部の影響を受け難い赤外線センサを構成することができる。   In order to suppress the influence of heat conduction from the outside, a specific resin layer thermally coupled to the infrared sensor element is provided on the side surface of the opening 2, and the specific resin layer is a resin of the surrounding resin package 1. It is good also as a structure which becomes higher in heat conductivity. For example, a resin layer having high thermal conductivity may be provided so as to surround the side surface of the opening portion 2, and a resin having poor thermal conductivity can be used for the resin package 1 in other portions. Thereby, the infrared sensor which is hard to receive external influence can be comprised.

このような熱伝導性の高い樹脂又は金属フレーム8は、はじめに、熱伝導性の高い樹脂又は金属フレーム8以外の部分を一体でモールド成型した後、熱伝導性の高い樹脂又は金属フレーム8を別途モールドした筒状のものを後付けで挿入・貼り付けし、組み込むことによって設けることができる。また、最初に量子型赤外線センサ素子4と熱伝導性の高い樹脂又は金属フレーム8のモールド部品とを張り合わせておき、後で一体成型することによって設けてもよい。   Such a resin or metal frame 8 having a high thermal conductivity is obtained by first molding a part other than the resin or the metal frame 8 having a high thermal conductivity and then separately molding the resin or the metal frame 8 having a high thermal conductivity. It can be provided by inserting and affixing and incorporating a molded cylindrical thing later. Alternatively, the quantum infrared sensor element 4 and the molded part of the resin or metal frame 8 having high thermal conductivity may be bonded together first, and then integrally formed later.

外部の温度の影響は受けやすくとも、量子型赤外線センサ素子4の温度と開口部分2の側面の樹脂パッケージ1の温度とが同じになりやすければ、高速な温度モニターにより量子型赤外線センサ素子4の温度特性を高速に補正することができる。   If the temperature of the quantum infrared sensor element 4 and the temperature of the resin package 1 on the side surface of the opening 2 are likely to be the same even though it is easily affected by the external temperature, the quantum infrared sensor element 4 can be measured by a high-speed temperature monitor. Temperature characteristics can be corrected at high speed.

図4は、樹脂パッケージ1の内部の温度と外部の温度とが均一になるように、樹脂パッケージ1のサイズを可能な限り小型化した例である。視野制限部を残して、パッケージ樹脂1の厚さを薄くすることにより、パッケージ樹脂1から量子型赤外線センサ素子4への熱伝導効率を上げるような構造となる。図示はしていないが、信号取り出し用にリード線及びパッドを備えている。図4のような構造では、外部の温度の影響は受けやすいが、量子型赤外線センサ素子4と開口部分2の側面の樹脂パッケージ1との間に温度差を生じにくいので、量子型赤外線センサ素子4の温度特性を高速に補正することが可能である。以下、外部の温度の影響は受けやすいが、量子型赤外線センサ素子4と開口部分2の側面の樹脂パッケージ1との間に温度差を生じにくい構造の例について説明する。   FIG. 4 shows an example in which the size of the resin package 1 is reduced as much as possible so that the temperature inside the resin package 1 and the temperature outside the resin package 1 become uniform. By reducing the thickness of the package resin 1 while leaving the field-of-view restriction part, the structure is such that the heat conduction efficiency from the package resin 1 to the quantum infrared sensor element 4 is increased. Although not shown, a lead wire and a pad are provided for signal extraction. In the structure as shown in FIG. 4, although it is easily affected by the external temperature, it is difficult for a temperature difference to occur between the quantum infrared sensor element 4 and the resin package 1 on the side surface of the opening 2. 4 can be corrected at high speed. Hereinafter, an example of a structure that is not easily affected by external temperature but hardly causes a temperature difference between the quantum infrared sensor element 4 and the resin package 1 on the side surface of the opening 2 will be described.

以下、添付図面を参照して本発明の好適な実施例について説明する。   Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

図5は、本発明の実施例2に係る赤外線センサの断面図である。上記のように、量子型赤外線センサ素子4と温度センサ素子5とを薄型の樹脂パッケージ1に埋め込み、量子型赤外線センサ素子4の受光面3を露出するように樹脂パッケージ1に開口部分2を設ける。開口部分2は、視野制限部の役割を果たす。樹脂パッケージ1において開口部分2が設けられている面のいずれかの場所に、量子型赤外線センサ素子4近傍まで切り欠き部分7を設ける。このように、切り欠き部分を設けて外部との接触面をさらに増加させることによって、開口部分2の側面の樹脂パッケージ1と量子型赤外線センサ素子4との温度差が少なくなるような構造となる。   FIG. 5 is a cross-sectional view of an infrared sensor according to Embodiment 2 of the present invention. As described above, the quantum infrared sensor element 4 and the temperature sensor element 5 are embedded in the thin resin package 1, and the opening portion 2 is provided in the resin package 1 so that the light receiving surface 3 of the quantum infrared sensor element 4 is exposed. . The opening part 2 serves as a visual field restriction part. In the resin package 1, a cutout portion 7 is provided up to the vicinity of the quantum infrared sensor element 4 at any location on the surface where the opening portion 2 is provided. In this way, by providing a notch portion to further increase the contact surface with the outside, the structure is such that the temperature difference between the resin package 1 on the side surface of the opening portion 2 and the quantum infrared sensor element 4 is reduced. .

量子型赤外線センサ素子4及び開口部分2の側面の樹脂パッケージ1の温度を高速で追従する必要があるため、開口部分2の側面に熱伝導性の高い樹脂又は金属フレーム8を設け、量子型赤外線センサ素子4と熱的に結合するとよい。開口部分2の側面の熱伝導性の高い樹脂又は金属フレーム8以外の樹脂パッケージ1の材質としては、熱伝導性の悪い樹脂(通常の樹脂)を使用する。また、切り込み部分7の周囲に、部分的に熱伝導性の高い樹脂又は金属フレーム8を設けてもよい。好ましくは、切り込み部分7と量子型赤外線センサ素子4とを繋ぐように、熱伝導性の高い樹脂又は金属フレーム8を設けるとよい。切り欠き部分7を設けることによって、開口部分2の側面と量子型赤外線センサ素子4との温度差が少なくなるため、開口部分2の側面の樹脂パッケージ1の温度と量子型赤外線センサ素子4の温度との追随性がよく、温度補正を高速かつ精度よく行うことができる。   Since it is necessary to follow the temperature of the resin package 1 on the side surface of the quantum infrared sensor element 4 and the opening portion 2 at a high speed, a resin or metal frame 8 having high thermal conductivity is provided on the side surface of the opening portion 2 to It may be thermally coupled to the sensor element 4. As the material of the resin package 1 other than the resin having a high thermal conductivity on the side surface of the opening 2 or the metal frame 8, a resin having a low thermal conductivity (ordinary resin) is used. Further, a resin or metal frame 8 having a partially high thermal conductivity may be provided around the cut portion 7. Preferably, a resin or metal frame 8 having high thermal conductivity is provided so as to connect the cut portion 7 and the quantum infrared sensor element 4. By providing the cutout portion 7, the temperature difference between the side surface of the opening portion 2 and the quantum infrared sensor element 4 is reduced, so that the temperature of the resin package 1 on the side surface of the opening portion 2 and the temperature of the quantum infrared sensor element 4 are reduced. The temperature correction can be performed at high speed and with high accuracy.

必要に応じて、開口部分2を塞ぐように樹脂パッケージ1に光学フィルタ6を取りつけてもよい。   If necessary, the optical filter 6 may be attached to the resin package 1 so as to close the opening 2.

以下、添付図面を参照して本発明の好適な実施例について説明する。図6は、本発明の実施例3に係る赤外線センサの断面図である。上記のように、量子型赤外線センサ素子4と温度センサ素子5を薄型の樹脂パッケージ1に埋め込み、量子型赤外線センサ素子4の受光面3を露出するように樹脂パッケージ1に開口部分2を設ける。開口部分2は、視野制限部の役割を果たす。樹脂パッケージ1において開口部分2が設けられている面及び樹脂パッケージ1において開口部分2を有する面と対向する面以外の面のいずれかの場所に、量子型赤外線センサ素子4近傍まで切り欠き部分7を設ける。このように、切り欠き部分を設けて外部との接触面をさらに増加させることによって、開口部分2の側面の樹脂パッケージ1と量子型赤外線センサ素子4との温度差が少なくなるような構造となる。   Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. FIG. 6 is a cross-sectional view of an infrared sensor according to Embodiment 3 of the present invention. As described above, the quantum infrared sensor element 4 and the temperature sensor element 5 are embedded in the thin resin package 1, and the opening portion 2 is provided in the resin package 1 so that the light receiving surface 3 of the quantum infrared sensor element 4 is exposed. The opening part 2 serves as a visual field restriction part. The cutout portion 7 is provided to the vicinity of the quantum infrared sensor element 4 in any place other than the surface of the resin package 1 where the opening portion 2 is provided and the surface of the resin package 1 opposite to the surface having the opening portion 2. Is provided. In this way, by providing a notch portion to further increase the contact surface with the outside, the structure is such that the temperature difference between the resin package 1 on the side surface of the opening portion 2 and the quantum infrared sensor element 4 is reduced. .

実施例2で説明したように、開口部分2の側面に熱伝導性の高い樹脂又は金属フレーム8を設け、量子型赤外線センサ素子4と熱的に結合するとよい。開口部分2の側面の熱伝導性の高い樹脂又は金属フレーム8以外の樹脂パッケージ1の材質としては、熱伝導性の悪い樹脂(通常の樹脂)を使用する。また、切り込み部分7の周囲に、部分的に熱伝導性の高い樹脂又は金属フレーム8を設けてもよい。好ましくは、切り込み部分7と量子型赤外線センサ素子4とを繋ぐように、熱伝導性の高い樹脂又は金属フレーム8を設けるとよい。   As described in the second embodiment, a resin or metal frame 8 having high thermal conductivity may be provided on the side surface of the opening portion 2 and thermally coupled to the quantum infrared sensor element 4. As the material of the resin package 1 other than the resin having a high thermal conductivity on the side surface of the opening 2 or the metal frame 8, a resin having a low thermal conductivity (ordinary resin) is used. Further, a resin or metal frame 8 having a partially high thermal conductivity may be provided around the cut portion 7. Preferably, a resin or metal frame 8 having high thermal conductivity is provided so as to connect the cut portion 7 and the quantum infrared sensor element 4.

また、実施例2と併せて、樹脂パッケージ1において開口部分2を有する面と対向する面以外の面のいずれかの場所に、量子型赤外線センサ素子4近傍まで切り欠き部分7を設けてもよい。   Further, in combination with the second embodiment, the cutout portion 7 may be provided up to the vicinity of the quantum infrared sensor element 4 in any location other than the surface facing the surface having the opening portion 2 in the resin package 1. .

切り欠き部分7を設けることによって、開口部分2の側面の樹脂パッケージ1と量子型赤外線センサ素子4との温度差が少なくなるため、開口部分2の側面の温度と量子型赤外線センサ素子4の温度との追随性がよく、温度補正を高速かつ精度よく行うことができる。   By providing the cutout portion 7, the temperature difference between the resin package 1 on the side surface of the opening portion 2 and the quantum infrared sensor element 4 is reduced, so that the temperature on the side surface of the opening portion 2 and the temperature of the quantum infrared sensor element 4 are reduced. The temperature correction can be performed at high speed and with high accuracy.

必要に応じて、開口部分2を塞ぐように樹脂パッケージ1に光学フィルタ6を取りつけてもよい。   If necessary, the optical filter 6 may be attached to the resin package 1 so as to close the opening 2.

1 樹脂パッケージ
2 開口部分
3 受光部
4 量子型赤外線センサ素子
5 温度センサ素子
6 光学フィルタ
7 切り欠き部分
8 熱伝導性の高い樹脂又は金属フレーム
DESCRIPTION OF SYMBOLS 1 Resin package 2 Opening part 3 Light-receiving part 4 Quantum type infrared sensor element 5 Temperature sensor element 6 Optical filter 7 Notch part 8 Resin or metal frame with high heat conductivity

Claims (6)

温度センサ素子と、
外部からの赤外線を受光する量子型の赤外線センサ素子と、
前記赤外線センサ素子と前記温度センサ素子とを包み込む樹脂パッケージと、
赤外線を前記赤外線センサ素子の受光面に導くように前記樹脂パッケージに設けられた開口部分と
を備えることを特徴とする赤外線センサ。
A temperature sensor element;
A quantum-type infrared sensor element that receives infrared rays from the outside;
A resin package enclosing the infrared sensor element and the temperature sensor element;
An infrared sensor, comprising: an opening provided in the resin package so as to guide infrared light to a light receiving surface of the infrared sensor element.
前記温度センサ素子は、前記赤外線センサ素子と接するように配置されていることを特徴とする請求項1に記載の赤外線センサ。   The infrared sensor according to claim 1, wherein the temperature sensor element is disposed in contact with the infrared sensor element. 前記開口部分の側面は、前記赤外線センサ素子と熱的に結合された金属フレームで覆われていることを特徴とする請求項1又は2に記載の赤外線センサ。   3. The infrared sensor according to claim 1, wherein a side surface of the opening portion is covered with a metal frame thermally coupled to the infrared sensor element. 前記開口部分の側面を囲むように、前記赤外線センサ素子と熱的に結合された樹脂層を設け、前記樹脂層は、前記樹脂層の周囲の前記樹脂パッケージの樹脂より熱伝導率が高いことを特徴とする請求項1又は2に記載の赤外線センサ。   A resin layer thermally coupled to the infrared sensor element is provided so as to surround a side surface of the opening portion, and the resin layer has higher thermal conductivity than a resin of the resin package around the resin layer. The infrared sensor according to claim 1 or 2, characterized in that 前記樹脂パッケージの前記開口部分の深さを5mm以下としたことを特徴とする請求項1から4のいずれかに記載の赤外線センサ。   The infrared sensor according to claim 1, wherein a depth of the opening portion of the resin package is 5 mm or less. 前記樹脂パッケージにおいて前記開口部分を有する面に対向する面以外の面のいずれかの場所に、前記赤外線センサ素子及び前記温度センサ素子を外部に露出させないように切り欠けられた複数の切り欠け部を設けることを特徴とする請求項1から5のいずれかに記載の赤外線センサ。   In the resin package, a plurality of notched portions that are notched so as not to expose the infrared sensor element and the temperature sensor element to the outside are provided at any location other than the surface facing the surface having the opening portion. The infrared sensor according to claim 1, wherein the infrared sensor is provided.
JP2009250285A 2009-10-30 2009-10-30 Infrared sensor Pending JP2011095143A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009250285A JP2011095143A (en) 2009-10-30 2009-10-30 Infrared sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009250285A JP2011095143A (en) 2009-10-30 2009-10-30 Infrared sensor

Publications (1)

Publication Number Publication Date
JP2011095143A true JP2011095143A (en) 2011-05-12

Family

ID=44112216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009250285A Pending JP2011095143A (en) 2009-10-30 2009-10-30 Infrared sensor

Country Status (1)

Country Link
JP (1) JP2011095143A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013185874A (en) * 2012-03-06 2013-09-19 Asahi Kasei Electronics Co Ltd Infrared detector
WO2013150718A1 (en) * 2012-04-06 2013-10-10 パナソニック株式会社 Illuminating light source
JP2015197311A (en) * 2014-03-31 2015-11-09 旭化成エレクトロニクス株式会社 Infrared sensor
WO2021062436A1 (en) * 2019-09-27 2021-04-01 The Procter & Gamble Company Systems and methods for thermal radiation detection
CN113447132A (en) * 2020-03-27 2021-09-28 维沃移动通信有限公司 Electronic equipment
US11592336B2 (en) 2019-09-27 2023-02-28 The Procter & Gamble Company Systems and methods for thermal radiation detection
US11709130B2 (en) 2020-10-09 2023-07-25 Asahi Kasel Microdevices Corporation Signal output apparatus and concentration measurement system

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6351469U (en) * 1986-09-20 1988-04-07
JP2005150393A (en) * 2003-11-14 2005-06-09 Sharp Corp Light emitting / receiving element submount
WO2006095834A1 (en) * 2005-03-09 2006-09-14 Asahi Kasei Emd Corporation Optical device and optical device manufacturing method
JP2009021307A (en) * 2007-07-10 2009-01-29 Sharp Corp Semiconductor device, imaging device, and manufacturing method thereof
JP2009123804A (en) * 2007-11-13 2009-06-04 Sharp Corp SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, POWER CONTROL DEVICE, ELECTRONIC DEVICE, AND MODULE

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6351469U (en) * 1986-09-20 1988-04-07
JP2005150393A (en) * 2003-11-14 2005-06-09 Sharp Corp Light emitting / receiving element submount
WO2006095834A1 (en) * 2005-03-09 2006-09-14 Asahi Kasei Emd Corporation Optical device and optical device manufacturing method
JP2009021307A (en) * 2007-07-10 2009-01-29 Sharp Corp Semiconductor device, imaging device, and manufacturing method thereof
JP2009123804A (en) * 2007-11-13 2009-06-04 Sharp Corp SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, POWER CONTROL DEVICE, ELECTRONIC DEVICE, AND MODULE

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013185874A (en) * 2012-03-06 2013-09-19 Asahi Kasei Electronics Co Ltd Infrared detector
WO2013150718A1 (en) * 2012-04-06 2013-10-10 パナソニック株式会社 Illuminating light source
JP5576989B2 (en) * 2012-04-06 2014-08-20 パナソニック株式会社 Light source for illumination
JP2015197311A (en) * 2014-03-31 2015-11-09 旭化成エレクトロニクス株式会社 Infrared sensor
WO2021062436A1 (en) * 2019-09-27 2021-04-01 The Procter & Gamble Company Systems and methods for thermal radiation detection
US11585697B2 (en) 2019-09-27 2023-02-21 The Procter & Gamble Company Systems and methods for thermal radiation detection
US11592336B2 (en) 2019-09-27 2023-02-28 The Procter & Gamble Company Systems and methods for thermal radiation detection
US11906362B2 (en) 2019-09-27 2024-02-20 The Procter & Gamble Company Systems and methods for thermal radiation detection
US12025500B2 (en) 2019-09-27 2024-07-02 The Procter & Gamble Company Systems and methods for thermal radiation detection
US12117345B2 (en) 2019-09-27 2024-10-15 The Procter & Gamble Company Systems and methods for thermal radiation detection
CN113447132A (en) * 2020-03-27 2021-09-28 维沃移动通信有限公司 Electronic equipment
US11709130B2 (en) 2020-10-09 2023-07-25 Asahi Kasel Microdevices Corporation Signal output apparatus and concentration measurement system

Similar Documents

Publication Publication Date Title
JP2011095143A (en) Infrared sensor
US7005642B2 (en) Infrared sensor and electronic device using the same
JP5640529B2 (en) Infrared sensor and circuit board having the same
JP2011128067A (en) Infrared sensor module
US20200249101A1 (en) Thermal sensor package for earbuds
JP5736906B2 (en) Infrared sensor
KR101727070B1 (en) Temperature sensor package
WO2012006420A1 (en) Infrared temperature measurement and stabilization thereof
JP5514071B2 (en) Temperature sensor
JP5564681B2 (en) Infrared sensor
JP2006317232A (en) Infrared sensor
CN214621493U (en) Infrared temperature sensor and electronic device
JP2011128065A (en) Infrared array sensor device
JP5706217B2 (en) Infrared sensor
JP6287233B2 (en) Infrared detector cap and infrared detector
WO2012063915A1 (en) Infrared sensor module and method of manufacturing same
JP6097496B2 (en) Infrared sensor manufacturing method
US12085451B2 (en) Infrared thermopile sensor
JP2005195435A (en) Noncontact type temperature detector
JP2011128066A (en) Infrared sensor module
JP2012215431A (en) Infrared sensor
US10782187B2 (en) Infrared temperature measurement and stabilization thereof
JP5720999B2 (en) Infrared sensor and circuit board having the same
JP2015083995A (en) Infrared sensor
JP6001992B2 (en) Perspective determination device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120223

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20121214

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130201

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130327

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131022

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140610