JP2011082326A - Method of manufacturing semiconductor device, method of manufacturing substrate, and substrate processing apparatus - Google Patents

Abstract

An SiC epitaxial film deposition apparatus having a sufficient heat insulation structure to be performed at a high temperature is provided.
A processing chamber for processing a plurality of substrates arranged at predetermined intervals, a processing chamber lower heat insulating portion provided at a lower portion of the substrate arrangement region and configured by a plurality of heat insulating members, and a processing A substrate processing apparatus comprising: a gas supply system that supplies a processing gas into the chamber; and a controller that controls the gas supply system to supply the processing gas into the processing chamber and form a silicon carbide film on the substrate. To do.
[Selection] Figure 2

Description

The present invention relates to a semiconductor device manufacturing method, a substrate manufacturing method, and a substrate processing apparatus of a semiconductor device having a step of processing a substrate. In particular, a step of forming a silicon carbide (silicon carbide, SiC) epitaxial film on a substrate. The present invention relates to a method for manufacturing a semiconductor device, a method for manufacturing a substrate, and a substrate processing apparatus.

Silicon carbide is particularly attracting attention as an element material for power devices. On the other hand, it is known that silicon carbide is more difficult to produce a crystal substrate and a device than silicon (silicon, Si).

A conventional semiconductor manufacturing apparatus for depositing an SiC epitaxial film has a plurality of substrates arranged in a plane on a plate-shaped susceptor, heated to 1500 ° C. to 1800 ° C., and a source gas used for film formation is reacted from one place. The SiC epitaxial film was grown on the substrate by supplying it into the room.

In Patent Document 1, deposition of deposits caused by source gas on the surface facing the susceptor and destabilization of SiC epitaxial growth due to generation of source gas convection, a susceptor substrate is used to solve these problems. A vacuum film forming apparatus and a thin film forming method in which the holding surface is arranged to face downward are disclosed.

JP 2006-196807 A

However, there are some problems in the prior art. First, when processing a large number of substrates, or when increasing the diameter of the substrate as shown in FIG. 17, it is necessary to increase the susceptor, which increases the floor area of the reaction chamber, and the source gas is at one location. Since the gas concentration distribution in the reaction chamber is not uniform, the thickness of the film formed on the wafer is not uniform, and further when the SiC epitaxial film is grown, 1500 is provided. Since it is performed at a temperature as high as 1 to 1800 ° C., it is difficult to control the temperature in the wafer surface, and it is necessary to construct a structure with a high heat insulating effect.

An object of the present invention is to solve the above-mentioned problems and to provide a semiconductor manufacturing apparatus capable of uniformly forming a plurality of substrates in SiC epitaxial film growth performed under high temperature conditions.

According to one aspect of the present invention, a processing chamber lower heat insulating portion that includes a processing chamber that processes a plurality of substrates arranged at a predetermined interval, and a plurality of heat insulating members that are provided below the arrangement region of the substrates. And a first gas supply system that supplies a processing gas into the processing chamber, and a controller that controls the gas supply system to supply the processing gas into the processing chamber and form a silicon carbide film on the substrate. A processing device is provided.

According to another aspect of the present invention, a processing chamber for processing a plurality of substrates arranged at a predetermined interval, and a reaction chamber lower portion provided at a lower portion of the substrate arrangement region and configured by a plurality of heat insulating members. In a semiconductor manufacturing apparatus having a heat insulating part, a semiconductor device having a step of transporting a plurality of substrates into a processing chamber, and a step of supplying a processing gas into the processing chamber and forming a silicon carbide film on the substrate A manufacturing method is provided.

Furthermore, according to another aspect of the present invention, a reaction chamber lower portion formed of a processing chamber for processing a plurality of substrates arranged at a predetermined interval and a plurality of heat insulating members provided at a lower portion of the substrate arrangement region. In a semiconductor manufacturing apparatus having a heat insulating portion, a step of transporting a plurality of substrates into a processing chamber and a step of supplying a processing gas into the processing chamber and forming a silicon carbide film on the substrate A manufacturing method is provided.

ADVANTAGE OF THE INVENTION According to this invention, the semiconductor manufacturing apparatus which can form into a film with a uniform film thickness on many board | substrates can be provided.

1 is a perspective view of a semiconductor manufacturing apparatus 10 to which an embodiment of the present invention is applied. 1 is a side sectional view of a semiconductor manufacturing apparatus 10 to which an embodiment of the present invention is applied. The control structure of each part which comprises the semiconductor manufacturing apparatus 10 with which one Embodiment of this invention is applied is shown. An example of the detailed shape of the boat heat insulation part 34 in the semiconductor manufacturing apparatus 10 with which one Embodiment of this invention is applied is shown. An example of the shape of the heat insulation member in the semiconductor manufacturing apparatus 10 with which one Embodiment of this invention is applied is shown. It is an upper surface sectional view showing processing furnace 40 of semiconductor manufacturing device 10 applied to one embodiment of the present invention. 1 is a schematic diagram of a processing furnace 40 and its peripheral structure of a semiconductor manufacturing apparatus 10 to which an embodiment of the present invention is applied. An example of the upper side view of a heat insulation member in the semiconductor manufacturing apparatus 10 with which 2nd embodiment of this invention is applied, and a side view are shown. An example of the top view of a heat insulation member in semiconductor manufacturing equipment 10 with which a third embodiment of the present invention is applied, and a side view are shown. The example of the side view enlarged view of the slit shape of the heat insulation member in the semiconductor manufacturing apparatus 10 with which 3rd embodiment of this invention is applied is shown. The side view enlarged view of the 1st modification of the slit shape of the heat insulation member in the semiconductor manufacturing apparatus 10 with which 3rd embodiment of this invention is applied is shown. The side view enlarged view of the 2nd modification of the slit shape of the heat insulation member in the semiconductor manufacturing apparatus 10 with which 3rd embodiment of this invention is applied is shown. An example of the top view and side view of a heat insulation member in semiconductor manufacturing equipment 10 to which a fourth embodiment of the present invention is applied is shown. The example of the side view enlarged view of the slit shape of the heat insulation member in the semiconductor manufacturing apparatus 10 with which 4th embodiment of this invention is applied is shown. The side view enlarged view of the 1st modification of the slit shape of the heat insulation member in the semiconductor manufacturing apparatus 10 with which 4th embodiment of this invention is applied is shown. The side view enlarged view of the 2nd modification of the slit shape of the heat insulation member in the semiconductor manufacturing apparatus 10 with which 4th embodiment of this invention is applied is shown. The positional relationship of a pancake type susceptor structure and a board | substrate is shown typically.

[First embodiment]
Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a perspective view showing an example of a semiconductor manufacturing apparatus 10 for forming a SiC epitaxial film according to an embodiment of the present invention. The semiconductor manufacturing apparatus 10 as the substrate processing apparatus is a batch type vertical heat treatment apparatus, and includes a housing 12 in which main parts are arranged. In the semiconductor manufacturing apparatus 10, for example, a hoop (hereinafter referred to as a pod) 16 is used as a wafer carrier as a substrate container for storing a wafer 14 as a substrate made of Si or SiC. A pod stage 18 is disposed on the front side of the housing 12, and the pod 16 is conveyed to the pod stage 18. For example, 25 wafers 14 are stored in the pod 16 and set on the pod stage 18 with the lid closed.

A pod transfer device 20 is arranged on the front side in the housing 12 and at a position facing the pod stage 18. A pod shelf 22, a pod opener 24, and a substrate number detector 26 are disposed in the vicinity of the pod transfer device 20. The pod shelf 22 is arranged above the pod opener 24 and configured to hold a plurality of pods 16 mounted thereon. The substrate number detector 26 is disposed adjacent to the pod opener 24. The pod carrying device 20 carries the pod 16 among the pod stage 18, the pod shelf 22, and the pod opener 24. The pod opener 24 opens the lid of the pod 16, and the substrate number detector 26 detects the number of wafers 14 in the pod 16 with the lid opened.

A substrate transfer device 28 and a boat 30 as a substrate support are disposed in the housing 12. The substrate transfer machine 28 has an arm (tweezer) 32 and has a structure that can be rotated up and down by a driving means (not shown). For example, the arm 32 can take out five wafers, and by moving the arm 32, the wafer 14 is transferred between the pod 16 and the boat 30 placed at the position of the pod opener 24.

The boat 30 is made of a heat-resistant material such as carbon graphite or SiC, and is configured to stack and hold a plurality of wafers 14 in a horizontal posture and in a state where their centers are aligned with each other. ing. In addition, a boat heat insulating portion 34 as a lower heat insulating portion of the processing chamber 44 configured by a disk-shaped heat insulating member 510 formed of a heat resistant material such as carbon graphite, quartz, SiC, or the like is disposed at the lower portion of the boat 30. Thus, heat from the heated body 48 to be described later is not easily transmitted to the lower side of the processing furnace 40 (see FIG. 2).

An example of a detailed configuration diagram of the boat heat insulating portion 34 is shown in FIG. As shown in FIG. 4, the boat heat insulating part 34 is configured such that a plurality of disk-shaped heat insulating members 510 are stacked and held in the vertical direction while being aligned with the heat insulating member supporting device 500 in a horizontal posture and aligned with each other in the center. It is placed and configured. The heat insulating member support device 500 is made of a heat resistant material such as carbon graphite, quartz, or SiC.

Preferably, as shown in FIG. 4, the heat insulating member support device 500 may be divided at predetermined heights. Thereby, stability at the time of installation and maintainability can be improved.

As shown in FIG. 5A, when the heat insulating member 510 has a disk shape, a high frequency current is applied to the induction coil 50 that is an induction heating source to heat the object to be heated 48 and the wafer 14 that is the substrate. An induction current flows in the heat insulating member 510 in the direction opposite to the induction coil 50. As a result, the heat insulating member 510 itself generates heat, so that the heat insulating effect of the boat heat insulating portion 34 is reduced.

Therefore, as shown in FIG. 5B, by providing slits in the disc-shaped heat insulating member 510 in the circumferential direction, for example, the path of the induced current can be blocked. This makes it possible to suppress the heat generation of the heat insulating member 510 itself, and the boat heat insulating portion 34 having a high heat insulating effect that can suppress the heat from the heated body 48 to be transmitted to the lower side of the processing furnace 40. Can be configured.

Preferably, when installing the heat insulating member 510, the heat insulating member 510 may be installed while changing the position of the slit shape. For example, the heat insulating member 510 may be installed by rotating the slit shape by 90 ° in the circumferential direction. Thereby, a slit-shaped position will be in a different position by an upper and lower heat insulation member, and the effect which interrupts | blocks the heat | fever by radiation can be improved.

A processing furnace 40 is disposed in the upper part on the back side in the housing 12. The boat 30 loaded with a plurality of wafers 14 is loaded into the processing furnace 40 and subjected to heat treatment.

FIG. 2 is a side cross-sectional view of the processing furnace 40 of the semiconductor manufacturing apparatus 10 for forming a SiC epitaxial film. In FIG. 2, a first gas supply for supplying at least a Si (silicon) atom-containing gas, a chlorine (hereinafter referred to as Cl) atom-containing gas, a carbon (hereinafter referred to as C) atom-containing gas, and a reducing gas as processing gases. One port 68 and one first exhaust port 90 are shown as representative examples. Also shown are a second gas supply port 360 and a second exhaust port 390 for supplying an inert gas between the reaction tube 42 and the heat insulating material 54 forming the reaction chamber.

The processing furnace 40 includes a cylindrical reaction tube 42 that forms a processing chamber 44. The reaction tube 42 is made of a heat-resistant material such as quartz or SiC, and is formed in a cylindrical shape having a closed upper end and an opened lower end. A processing chamber 44 is formed in the cylindrical hollow portion inside the reaction tube 42, and the wafer 14 is placed in a horizontal position by the boat 30 as a substrate made of silicon (Si) or silicon carbide (SiC) and is centered on each other. Are arranged so that they can be stored in a state where they are aligned and stacked and held vertically.

Below the reaction tube 42, a manifold is disposed concentrically with the reaction tube 42. The manifold is made of, for example, stainless steel and is formed in a cylindrical shape with an upper end and a lower end opened. This manifold is provided to support the reaction tube 42. An O-ring is provided as a seal member between the manifold and the reaction tube 42. The manifold is supported by a holding body (not shown), so that the reaction tube 42 is installed vertically. A reaction vessel is formed by the reaction tube 42 and the manifold.

The processing furnace 40 includes an object to be heated 48 and an induction coil 50 as an induction heating source as a magnetic field generation unit. The object to be heated 48 is disposed in the processing chamber 44, and the object to be heated is provided so as to surround at least the arrangement region of the wafer 14 that is a substrate. The heated body 48 is heated by a magnetic field generated by an induction coil 50 provided outside the reaction tube 42. As the heated body 48 generates heat, the inside of the processing chamber 44 is heated.

The heated body 48 preferably has a shape in which a ceiling is provided and the upper part is closed. The gas supplied from this can be sealed. Furthermore, heat radiation from the upper portion of the processing chamber 44 can be suppressed.

More preferably, the induction coil 50 is provided up to a position higher than the ceiling portion of the heated object 48. This is because the ceiling part is easier to radiate heat than the side wall of the heated body 48, and in particular, the center part of the ceiling part is easier to radiate heat. Thereby, the above-mentioned problem can be solved and the wafer 14 can be heated uniformly.

A temperature sensor (not shown) is provided in the vicinity of the heated body 48 as a temperature detection body that detects the temperature in the processing chamber 44. A temperature control unit 52 is electrically connected to the induction coil 50 and the temperature sensor as the induction heating source, and processing is performed by adjusting the degree of energization to the induction coil 50 based on the temperature information detected by the temperature sensor. It is configured to control at a predetermined timing so that the temperature in the chamber 44 has a predetermined temperature distribution (see FIG. 3).

Between the heated body 48 and the reaction tube 42, for example, a heat insulating material 54 made of carbon felt or the like that is difficult to induce is provided, and by providing this heat insulating material 54, the heat of the heated body 48 is changed to the reaction tube 42. Alternatively, transmission to the outside of the reaction tube 42 can be suppressed.

Preferably, the heat insulating material 54 has a shape in which a ceiling portion is provided and an upper portion is closed. For example, when the reaction tube 42 is made of quartz and the heat insulating material 54 is not provided with a ceiling, the reaction tube 42 is melted by heat radiation from the heated body 48. Thus, it is possible to suppress the influence on the heat radiation from the upper part of the heated body 48 to the reaction tube 42.

More preferably, the induction coil 50 is provided up to a position higher than the ceiling portion of the heat insulating material 54. Thereby, the wafer 14 can be heated uniformly.

In addition, an outer heat insulation wall having, for example, a water cooling structure is provided outside the induction coil 50 so as to surround the induction coil 50 in order to prevent heat in the processing chamber 44 from being transmitted to the outside. Further, a magnetic seal 58 is provided outside the outer heat insulating wall to prevent the magnetic field generated by the induction coil 50 from leaking outside.

As shown in FIGS. 2 and 6, there is at least a Si (silicon) atom-containing gas, a Cl (chlorine) atom-containing gas, a C (carbon) atom-containing gas, and a reducing gas between the heated object 48 and the wafer 14. Between the first gas supply port 68 and the first exhaust port 90, the reaction tube 42 and the heat insulating material 54, and at least a second gas supply port 360 for supplying an inert gas and a second exhaust. A mouth 390 is disposed. Each will be described in detail.

As processing gas, for example, at least Si (silicon) atom-containing gas, for example, monosilane (hereinafter referred to as SiH ₄ ) gas, and Cl (chlorine) atom-containing gas, for example, hydrogen chloride (hereinafter referred to as HCl) gas and C (carbon) atom-containing gas The first gas supply port 68 for supplying, for example, propane (hereinafter referred to as C ₃ H ₈ ) gas and, for example, hydrogen (hereinafter referred to as H ₂ ) gas as the reducing gas, is composed of, for example, carbon graphite and is to be heated. 48 is provided inside the manifold and is attached to the manifold so as to penetrate the manifold.

The first gas supply port 68 is connected to the first gas line 222. The first gas line 222 is, for example, a mass flow controller (hereinafter referred to as MFC) as a flow rate controller (flow rate control means) for each of SiH ₄ gas, HCl gas, C ₃ H ₈ gas, and H ₂ gas. It is connected to, for example, SiH ₄ gas source 210a, HCl gas source 210b, C ₃ H ₈ gas source 210c, and H ₂ gas source 210d through 211a, 211b, 211c, 211d and valves 212a, 212b, 212c, 212d.

With this configuration, for example, the supply flow rate, concentration, and partial pressure of each of SiH ₄ gas, HCl gas, C ₃ H ₈ gas, and H ₂ gas can be controlled in the processing chamber 44. The valves 212a, 212b, 212c, and 212d, and the MFCs 211a, 211b, 211c, and 211d are electrically connected by the gas flow rate control unit 78, and at a predetermined timing so that the flow rate of the supplied gas becomes a predetermined flow rate. For example, SiH ₄ gas, HCl gas, C ₃ H ₈ gas, H ₂ gas source 210a, 210b, 210c, 210d, valves 212a, 212b, 212c, 212d, MFC 211a, for example. , 211b, 211c, 211d, the gas line 222, and the first gas supply port 68 constitute a first gas supply system as a gas supply system.

In the above description, at least a Si (silicon) atom-containing gas, a Cl (chlorine) atom-containing gas, a C (carbon) atom-containing gas, and a reducing gas are supplied as processing gases from the first gas supply port 68. However, the present invention is not limited to this, and a plurality of gas supply ports corresponding to the respective gas supply ports may be provided, or a gas supply port may be provided so that these gases can be supplied in combination.

Incidentally, Cl is exemplified HCl gas as (chlorine) atom-containing gas may be used Cl ₂ gas (chlorine gas).

In the above description, the Si (silicon) atom-containing gas and the Cl (chlorine) atom-containing gas are supplied. However, a gas containing Si (silicon) atoms and Cl (chlorine) atoms, for example, tetrachlorosilane (hereinafter, SiCl ₄ and Gas), trichlorosilane (hereinafter referred to as SiHCl ₃ ) gas, and dichlorosilane (hereinafter referred to as SiH ₂ Cl ₂ ) gas may be supplied.

Although it exemplified the _C 3 _{H 6} gas as C (carbon) atom-containing gas, (or less _C 2 _{H 4)} ethylene gas, acetylene _(hereinafter referred to as C 2 _{H 2)} gas may be used.

The dopant gas may be further supplied from the first gas supply port 68, or a dopant gas may be supplied by further providing a gas supply port for supplying the dopant gas.

Further, the first exhaust port 90 is disposed so as to be located on the opposite surface with respect to the position of the first supply port 68, and the gas exhaust pipe 230 connected to the first exhaust port 90 is provided in the manifold. It is provided to penetrate. A vacuum exhaust device 220 such as a vacuum pump is connected to a downstream side of the gas exhaust pipe 230 via a pressure sensor (not shown) as a pressure detector and an APC (Auto Pressure Controller, hereinafter referred to as APC) valve 214 as a pressure regulator. ing. A pressure control unit 98 is electrically connected to the pressure sensor and the APC valve 214, and the pressure control unit adjusts the opening degree of the APC valve 214 based on the pressure detected by the pressure sensor. It is configured to control at a predetermined timing so that the pressure inside the heating body 48 becomes a predetermined pressure (see FIG. 3).

As described above, at least a Si (silicon) atom-containing gas, a Cl (chlorine) atom-containing gas, a C (carbon) atom-containing gas, and a reducing gas are supplied as processing gases from the first gas supply port 68 and supplied. Since the gas flows parallel to the wafer 14 made of Si or SiC and flows toward the first exhaust port 90, the entire wafer 14 is efficiently and uniformly exposed to the gas.

Preferably, as shown in FIG. 6, in the processing chamber 44, between the heated body 48 and the wafer 14, between the first gas supply port 68 and the first exhaust port 90, A structure 400 may be provided. For example, the structure 400 is provided at each facing position. The structure 400 is preferably made of a heat insulating material, a carbon graphite material, or the like, and can suppress heat resistance and particle generation, and thereby the gas supplied from the first gas supply port 68 is distributed to the entire wafer 14. The film thickness uniformity of the SiC epitaxial film that is efficiently and uniformly exposed and formed on the wafer 14 is improved.

The second gas supply port 360 is disposed between the reaction tube 42 and the heat insulating material 54 and is attached so as to penetrate the manifold. Further, a second exhaust port 390 is disposed between the reaction tube 42 and the heat insulating material 54 and is disposed so as to be opposed to the second gas supply port 360, and the manifold has a second exhaust port. A gas exhaust pipe 230 connected to the port 390 is provided so as to penetrate therethrough. The second gas supply port 360 is supplied with at least, for example, argon (hereinafter referred to as Ar) gas as an inert gas, and is a gas that contributes to SiC epitaxial film growth, for example, Si (silicon) atom-containing gas or C ( Carbon) atom-containing gas, Cl (chlorine) atom-containing gas or a mixed gas thereof is prevented from entering between the reaction tube 42 and the heat insulating material 54, and is unnecessary on the inner wall of the reaction tube 42 or the outer wall of the heat insulating material 54. It is possible to prevent the product from adhering.

The inert gas supplied between the reaction tube 42 and the heat insulating material 54 is connected to the downstream side of the gas exhaust tube 230 from the second exhaust port 390 as a pressure sensor (not shown) and an APC as a pressure regulator. The air is exhausted from a vacuum exhaust device 220 such as a vacuum pump through a valve 214. A pressure control unit is electrically connected to the pressure sensor and the APC valve 214, and the pressure control unit adjusts the opening degree of the APC valve 214 based on the pressure detected by the pressure sensor to thereby react the reaction tube. It is configured to control at a predetermined timing so that the pressure in the space between 42 and the heat insulating material 54 becomes a predetermined pressure (see FIG. 3).

In addition, although Ar gas was illustrated as an inert gas, it is not restricted to this, Helium (hereinafter referred to as He) gas, Neon (hereinafter referred to as Ne) gas, krypton (hereinafter referred to as Kr), xenon (hereinafter referred to as Xe) ) Or the like, or a combination of at least two of the aforementioned rare gases may be supplied.

Next, the configuration around the processing furnace 40 will be described. FIG. 7 shows a schematic diagram of the processing furnace 40 and its peripheral structure. Below the processing furnace 40, a seal cap 102 is provided as a furnace port lid for secretly closing the lower end opening of the processing furnace 40. The seal cap 102 is made of a metal such as stainless steel and is formed in a disk shape. On the upper surface of the seal cap 102, an O-ring as a seal material that comes into contact with the lower end of the processing furnace 40 is provided. A rotation mechanism 218 is provided on the seal cap 102. The rotating shaft 106 of the rotating mechanism 218 is connected to the boat 30 through the seal cap 102, and is configured to rotate the wafer 14 by rotating the boat 30. The seal cap 102 is configured to be moved up and down in the vertical direction by an elevating motor 122, which will be described later, as an elevating mechanism directed to the outside of the processing furnace 40, whereby the boat 30 is carried into and out of the processing furnace 40. Is possible. A drive control unit 108 is electrically connected to the rotation mechanism 218 and the lifting motor 122, and is configured to control at a predetermined timing so as to perform a predetermined operation (see FIG. 3).

A lower substrate 112 is provided on the outer surface of the load lock chamber 110 as a spare chamber. The lower substrate 112 is provided with a guide shaft 116 that fits with the lifting platform 114 and a ball screw 118 that is screwed with the lifting platform 114. The upper substrate 120 is provided on the upper ends of the guide shaft 116 and the ball screw 118 erected on the lower substrate 112. The ball screw 118 is rotated by a lift motor 122 provided on the upper substrate 120. The lifting platform 114 is moved up and down by the rotation of the ball screw 118.

A hollow elevating shaft 124 is suspended from the elevating table 114, and the connecting portion between the elevating table 114 and the elevating shaft 124 is airtight. The elevating shaft 124 moves up and down together with the elevating table 114. The elevating shaft 124 penetrates the top plate 126 of the load lock chamber 110. The through hole of the top plate 126 through which the elevating shaft 124 penetrates has a sufficient margin so as not to contact the elevating shaft 124. Between the load lock chamber 110 and the lifting platform 114, a bellows 128 is provided as a stretchable hollow elastic body so as to cover the periphery of the lifting shaft 124 in order to keep the load lock chamber 110 airtight. The bellows 128 has a sufficient amount of expansion and contraction that can accommodate the amount of elevation of the lifting platform 114, and the inner diameter of the bellows 128 is sufficiently larger than the outer shape of the lifting shaft 124, so that it does not come into contact with the expansion and contraction of the bellows 128. Has been.

A lifting substrate 130 is fixed horizontally to the lower end of the lifting shaft 124. A drive unit cover 132 is airtightly attached to the lower surface of the elevating substrate 130 via a seal member such as an O-ring. The elevating board 130 and the drive unit cover 132 constitute a drive unit storage case 134. With this configuration, the inside of the drive unit storage case 134 is isolated from the atmosphere in the load lock chamber 110.

Further, a rotation mechanism 218 of the boat 30 is provided inside the drive unit storage case 134, and the periphery of the rotation mechanism 218 is cooled by the cooling mechanism 136.

The power cable 138 is led from the upper end of the elevating shaft 124 through the hollow portion of the elevating shaft 124 to the rotating mechanism 218 and connected thereto. Further, a cooling flow path 140 is formed in the cooling mechanism 136 and the seal cap 102. The cooling water pipe 142 is led from the upper end of the elevating shaft 124 through the hollow portion of the elevating shaft 124 to the cooling flow path 140 and connected thereto.

As the elevating motor 122 is driven and the ball screw 118 rotates, the drive unit storage case 134 is raised and lowered via the elevating platform 114 and the elevating shaft 124.

When the drive unit storage case 134 is raised, the seal cap 102 provided in an airtight manner on the elevating substrate 130 closes the furnace port 144 that is an opening of the processing furnace 40, so that wafer processing is possible. When the drive unit storage case 134 is lowered, the boat 30 is lowered together with the seal cap 102, and the wafer 14 can be carried out to the outside.

In the above description, the load lock chamber 110 is exemplified as the spare chamber, but the present invention is not limited to this, and other forms may be used. However, by using the load lock chamber 110, oxidation of the wafer 14 which is a substrate before and after processing can be suppressed, and a semiconductor device having good performance can be manufactured.

FIG. 3 shows a control configuration of each part constituting the semiconductor manufacturing apparatus 10 for forming a silicon carbide (SiC) epitaxial film. The temperature control unit 52, the gas flow rate control unit 78, the pressure control unit 98, and the drive control unit 108 constitute an operation unit and an input / output unit, and are electrically connected to a main control unit 150 that controls the entire semiconductor manufacturing apparatus 10. ing. These temperature control unit 52, gas flow rate control unit 78, pressure control unit 98, and drive control unit 108 are configured as a controller 152.

Next, a method of forming a SiC epitaxial film on a substrate such as a wafer made of SiC or the like as a step of a semiconductor device manufacturing process using the semiconductor manufacturing apparatus 10 configured as described above. explain. In the following description, the operation of each part constituting the semiconductor manufacturing apparatus 10 is controlled by the controller 152.

First, when the pod 16 containing a plurality of wafers 14 is set on the pod stage 18, the pod 16 is transferred from the pod stage 18 to the pod shelf 20 by the pod transfer device 20 and stocked on the pod shelf 22. Next, the pod 16 stocked on the pod shelf 22 is transported to the pod opener 24 by the pod transport device 20 and set, the lid of the pod 16 is opened by the pod opener 24, and the pod 16 is detected by the substrate number detector 26. The number of wafers 14 accommodated is detected.

Next, the wafer 14 is taken out from the pod 16 at the position of the pod opener 24 by the substrate transfer device 28 and transferred to the boat 30.

When a plurality of wafers 14 are loaded into the boat 30, the boat 30 holding the plurality of wafers 14 is loaded into the processing chamber 44 by the lifting and lowering operation of the lifting platform 114 and the lifting shaft 124 by the lifting motor 122 (boat loading). ) In this state, the seal cap 102 is in a state of sealing the lower end of the manifold via the O-ring.

The inside of the object to be heated 48 is evacuated by the evacuation device 220 so that a predetermined pressure (degree of vacuum) is obtained. At this time, the pressure inside the heated body 48 is measured by the pressure sensor, and the APC valve 214 communicating with the first exhaust port 90 and the second exhaust port 390 is feedback-controlled based on the measured pressure. The inside of the wafer 14 and the heated body 48 is heated by the induction coil 50 as an induction heating source so that the inside of the heated body 48 and the heated body 48 becomes a predetermined temperature, and the heated body 48 and the wafer 14 as the substrate are heated. At this time, the state of energization to the induction coil 50 is feedback-controlled based on the temperature information detected by the temperature sensor so that the inside of the heated body 48 has a predetermined temperature distribution. Subsequently, the wafer 30 is rotated in the circumferential direction by rotating the boat 30 by the rotation mechanism 218.

Subsequently, the Si (silicon) atom-containing gas, the Cl (chlorine) atom-containing gas, the C (carbon) atom-containing gas, and the H ₂ gas that is the reducing gas that contribute to the silicon carbide (SiC) epitaxial growth reaction are respectively supplied to the gas source 210a. , 210b, 210c, 210d, and jetted into the heated body 48 from the first gas supply port 68 provided at least one inside the heated body 48, and the SiC epitaxial growth reaction is performed.

At this time, Si (silicon) atom-containing gas, Cl (chlorine) atom-containing gas, C (carbon) atom-containing gas, and H ₂ gas, which is a reducing gas, correspond to MFCs 211a, 211b, After the opening degrees of 211c and 211d are adjusted, the valves 212a, 212b, 212c and 212d are opened, and the respective gases pass through the gas supply pipe 222 and pass through the first gas supply port 68 to the inside of the object to be heated 48. To be supplied.

The gas supplied from the first gas supply port 68 passes through the inside of the heated body 48 in the processing chamber 44 and is exhausted from the first exhaust port 90 through the gas exhaust pipe 230. The supplied gas comes into contact with the wafer 14 when passing through the inside of the object to be heated 48 and SiC epitaxial film growth is performed on the surface of the wafer 14.

Further, after the opening degree of the corresponding MFC 211e is adjusted so that, for example, Ar gas which is an inert gas from the gas supply source 210e has a predetermined flow rate, the valve 212e is opened, and the gas supply pipe 240 is circulated. The gas is supplied from the second gas supply port 360 to a space formed between the reaction tube 42 and the heat insulating material 54. Ar gas that is an inert gas supplied from the second gas supply port 360 passes through a space formed between the heat insulating material 54 and the reaction tube 42 in the processing chamber 44, and the second exhaust port 390. Exhausted from.

In the SiC epitaxial film growth, when a preset time elapses, the supply of the gas is stopped, an inert gas is supplied from an inert gas supply source (not shown), and the inside of the object to be heated 48 is replaced with the inert gas. At the same time, the pressure in the processing chamber 44 is restored to normal pressure.

Thereafter, the seal cap 102 is lowered by the lifting motor 122 to open the lower end of the manifold, and the processed wafer 14 is carried out from the lower end of the manifold to the outside of the reaction tube 42 while being held by the boat 30 (boat unloading). The boat 30 waits at a predetermined position until all the wafers 14 supported by the boat 30 are cooled. Next, when the wafer 14 of the boat 30 that has been waiting is cooled to a predetermined temperature, the substrate transfer device 28 takes out the wafer 14 from the boat 30 and transfers it to the empty pod 16 set in the pod opener 24. And accommodate. Thereafter, the pod 16 containing the wafer 14 is transferred to the pod shelf 22 or the pod stage 18 by the pod transfer device 20. In this way, a series of operations of the semiconductor manufacturing apparatus 10 is completed.

According to the present embodiment, at least one of the following effects is achieved.
(1) By providing a slit shape in the circumferential direction of the heat insulating member, heat generation due to induction heating of the heat insulating member itself can be suppressed.
(2) By (1), the heat insulation effect of the boat heat insulation part 34 can be improved.
(3) Due to the above effects, high-temperature silicon carbide (SiC) epitaxial film growth can be performed on a large number of substrates in a single process in the processing chamber 44.

[Second Embodiment]
Next, a second embodiment will be described.

In 1st Embodiment, the induction current 610 which flows through the inside of the heat insulation member 510 was interrupted | blocked by providing a slit shape in the circumferential direction of the heat insulation member 510, and heat insulation member 510 itself was suppressed from being induction-heated. In the second embodiment, as shown in FIG. 8, a part of the heat insulating member 510 is bent to form a slit shape.

Since the shape is as shown in FIG. 8, the induced current 610 flowing in the heat insulating member 510 can be cut off, and the heat generated by the radiation from the heated body 48 above the heat insulating portion 34 can also be cut off.

At this time, if the angle of bending is 90 ° or more, heat due to radiation from the heated body 48 cannot be suppressed. Therefore, the bending angle needs to be 90 ° or less, and preferably 45 ° or less.

Preferably, when installing the heat insulating member 510, the heat insulating member 510 may be installed while changing the position of the slit shape. For example, it may be installed while shifting by 90 ° in the circumferential direction. Thereby, the effect which interrupts | blocks the heat by radiation can be improved.

According to the present embodiment, in addition to the effects described in the first embodiment, at least one or more of the following effects can be achieved.
(1) The induced current flowing in the heat insulating member can be cut off, and the heat generated by the radiation from the heated body 48 above the heat insulating portion can also be cut off.

[Third embodiment]
Next, a third embodiment will be described.
In 3rd Embodiment, as shown in FIG.9 and FIG.10, when forming a slit shape in the circumferential direction for a part of heat insulation member 510, the notch is provided in the diagonal direction. 9 shows a top view and a side view of the heat insulating member 510 with respect to an example of the shape of the heat insulating member 510 used in the third embodiment, and FIG. 10 is an enlarged view of the slit shape portion of the side view in FIG. Is shown. As a result, it is possible to easily form a shape for blocking the induced current 610 flowing inside the heat insulating member 510 and also blocking heat due to radiation from the heated body 48 above the heat insulating portion 34.

Furthermore, the modification of the slit shape of the heat insulation member 510 in 3rd Embodiment is shown in FIG. As shown in FIG. 11, the slit shape to be formed is a dogleg shape. Thereby, the effect which interrupts | blocks also the heat by the radiation from the to-be-heated body 42 of the heat insulation part 34 upper part becomes high further.

In addition, as shown in FIG. 12, heat insulating members 510a and 510b having slit shapes cut out in different oblique directions may be overlapped and used as a set of heat insulating members. As a result, as shown in FIG. 11, it is highly effective in blocking heat due to radiation from the heated body 48 above the heat insulating portion 34 equivalent to the slit shape cut into a square shape, and a slit shape in a different oblique direction is provided. Therefore, it is easy to manufacture.

In the above description, two heat insulating members 510a and 510b having slit shapes cut out in different oblique directions are overlapped to form one set. Three or more members may be overlapped to form a set of heat insulating members, and preferably, the cut-out directions are alternately overlapped.

Furthermore, as a modification of the shape of the heat insulating member 510 in the third embodiment, a heat insulating member having a slit shape in which a part of the upper surface portion and a part of the lower surface portion of the heat member are extended as shown in FIG. 13 is used. This is the case. Thereby, the induced current flowing into the heat insulating member 510 can be blocked, and the influence of heat from the heated body 48 on the lower part of the reaction chamber can be suppressed, so that the heat insulating effect can be improved.

Preferably, as shown in FIG. 14, it is preferable to provide a slit shape so that the end portion of the upper surface portion and the end portion of the lower surface portion of the heat insulating member are aligned.

More preferably, as shown in FIG. 15, the effect of heat on the lower portion of the processing chamber 44 due to radiation can be further suppressed by forming a slit shape so that the upper surface portion and the lower surface portion partially overlap each other.

In addition, as shown in FIG. 15, the heat insulating member may be installed by overlapping the upper heat insulating member 510 c and the lower heat insulating member 510 d and the divided members. Thereby, manufacture of the heat insulation member 510 can be made easy.

According to this embodiment, in addition to the effects described in the first and second embodiments, at least one or more of the following effects can be achieved.
(1) A shape for blocking heat generated by radiation from the heated body 42 can be easily formed.

Although the present invention has been described with respect to SiC epitaxial film growth, it can also be applied to other epitaxial films and CVD films.

[Appendix]
Below, the preferable aspect which concerns on this embodiment is appended.

[Appendix 1]
A processing chamber for processing a plurality of substrates arranged at a predetermined interval, a processing chamber lower heat insulating portion formed of a plurality of heat insulating members provided at a lower portion of the substrate arrangement region, and containing at least silicon atoms in the processing chamber A first gas supply system for supplying a gas and a carbon atom-containing gas; and the gas supply system supplies at least the silicon atom-containing gas and the carbon atom-containing gas into a processing chamber to form a silicon carbide film on the substrate. A substrate processing apparatus comprising: a controller that controls to form a film.

[Appendix 2]
In a semiconductor manufacturing apparatus having a processing chamber for processing a plurality of substrates arranged at a predetermined interval, and a reaction chamber lower heat insulating portion provided at a lower portion of the substrate arrangement region and configured by a plurality of heat insulating members And a step of transporting a plurality of substrates into the processing chamber, and a step of supplying at least a silicon atom-containing gas and a carbon atom-containing gas into the processing chamber to form a silicon carbide film on the substrate. Production method.

[Appendix 3]
In a semiconductor manufacturing apparatus having a processing chamber for processing a plurality of substrates arranged at a predetermined interval, and a reaction chamber lower heat insulating portion provided at a lower portion of the substrate arrangement region and configured by a plurality of heat insulating members Manufacturing a substrate having a step of transporting a plurality of substrates into the processing chamber and a step of supplying at least a silicon atom-containing gas and a carbon atom-containing gas into the processing chamber to form a silicon carbide film on the substrate. Method.

[Appendix 4]
The substrate processing apparatus which uses the heat insulation member which has a slit shape in the circumferential direction in Additional remark 1.

[Appendix 5]
The substrate processing apparatus as set forth in appendix 4, wherein the position of the slit is shifted by 90 ° in the circumferential direction.

[Appendix 6]
The substrate processing apparatus according to appendix 4, wherein the position of the slit is shifted in the circumferential direction.

[Appendix 7]
The substrate processing apparatus using the heat insulation member which has the shape which bent a part of heat insulation member in the additional direction 1 to the upper direction or the downward direction.

[Appendix 8]
The substrate processing apparatus using the heat insulation member which has the shape which bent a part of heat insulation member in the additional note 1 to the angle of 90 degrees or less to the upper direction or the downward direction.

[Appendix 9]
The substrate processing apparatus of claim 1, wherein the heat insulating member is provided with a slit shape obliquely with respect to the thickness direction.

[Appendix 10]
The substrate processing apparatus of claim 1, wherein the slit shape uses a heat insulating member provided in a U shape in the thickness direction.

[Appendix 11]
The substrate processing apparatus according to appendix 9, wherein two heat insulating members provided in an oblique direction having a different slit shape with respect to the thickness direction are overlapped.

[Appendix 12]
2. The substrate processing apparatus according to claim 1, wherein the heat insulating member has a slit shape in which a part of the upper surface portion and a part of the lower surface portion of the heat insulating member extend.

[Appendix 13]
The substrate processing apparatus of claim 12, wherein the insulating member has a slit shape in which a part of the extended portion of the upper surface portion of the heat insulating member overlaps with a portion of the extended portion extended from the lower surface portion.

[Appendix 14]
The substrate processing apparatus according to appendix 12, wherein the heat insulating member in which part of the slit shape extends in different directions is used in an overlapping manner.

[Appendix 15]
The substrate processing apparatus according to appendix 14, wherein a plurality of heat insulating members each having a slit shape extending in a different direction are overlapped.

[Appendix 16]
The substrate processing apparatus according to any one of appendices 4 to 15, wherein when installing the slit shape formed in the circumferential direction in the heat insulating portion, the position of the slit shape is shifted several degrees in the radial direction and the heat insulating member is installed.

[Appendix 17]
The substrate processing apparatus of claim 16, wherein when the slit shape formed in the circumferential direction is installed in the heat insulating portion, the position of the slit shape is shifted by 90 ° in the radial direction and the heat insulating member is installed.

[Appendix 18]
The substrate processing apparatus of claim 16, wherein when the slit shape formed in the circumferential direction is installed in the heat insulating portion, the position of the slit shape is shifted by 180 ° in the radial direction and the heat insulating member is installed.

DESCRIPTION OF SYMBOLS 10 Semiconductor manufacturing apparatus 12 Case 14 Wafer 16 Pod 30 Boat 40 Processing furnace 42 Reaction tube 44 Processing chamber 48 Heated object 50 Inductive coil 68 1st gas supply port 90 1st exhaust port 150 Main control part 152 Controller 360 1st 2 gas supply port 390 2nd exhaust port 500 heat insulation member support fixture 510 heat insulation member 600 (supply) current 610 induction current

Claims (3)

A processing chamber for processing a plurality of substrates arranged at predetermined intervals;
A process chamber lower heat insulating portion provided at a lower portion of the array region of the substrate and configured by a plurality of heat insulating members;
A gas supply system for supplying a processing gas into the processing chamber;
And a controller for controlling the gas supply system to supply a processing gas into the processing chamber and form a silicon carbide film on the substrate. A processing chamber for processing a plurality of substrates arranged at predetermined intervals;
A reaction chamber lower heat insulating portion provided at a lower portion of the array region of the substrate and configured by a plurality of heat insulating members;
In a semiconductor manufacturing apparatus having
Transporting a plurality of substrates into the processing chamber;
Supplying a processing gas into the processing chamber and forming a silicon carbide film on the substrate. A processing chamber for processing a plurality of substrates arranged at predetermined intervals;
A reaction chamber lower heat insulating portion provided at a lower portion of the array region of the substrate and configured by a plurality of heat insulating members;
In a semiconductor manufacturing apparatus having
Transporting a plurality of substrates into the processing chamber;
And a step of supplying a processing gas into the processing chamber and forming a silicon carbide film on the substrate.