JP2011071545A - 露光装置及びデバイス製造方法 - Google Patents
露光装置及びデバイス製造方法 Download PDFInfo
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- JP2011071545A JP2011071545A JP2010275375A JP2010275375A JP2011071545A JP 2011071545 A JP2011071545 A JP 2011071545A JP 2010275375 A JP2010275375 A JP 2010275375A JP 2010275375 A JP2010275375 A JP 2010275375A JP 2011071545 A JP2011071545 A JP 2011071545A
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- substrate
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
-
- H10P76/2041—
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photovoltaic Devices (AREA)
Abstract
【解決手段】液浸露光装置において、対象物と基板テーブル上の間隙の大きさまたは間隙領域を低減することにより、及び/または、間隙を覆い隠すカバープレートを備えることにより、液浸用液体中での気泡の形成を最小化または防止される。また、前記対象物の端部と前記支持テーブルの穴部の側部との間隙を、液体に接触しているときに縮小するために前記穴部において横方向に前記対象物を移動させるアクチュエータをさらに備えてもよい。
【選択図】図1
Description
Claims (3)
- 少なくとも基板を含む対象物のための支持テーブルであって、該支持テーブルに形成されている穴の内部に前記基板を保持し、前記基板の端部と前記穴の側部との間に間隙が形成される支持テーブルと、
前記基板の端部と前記穴の側部との間の前記間隙を覆うよう前記支持テーブル上に配置されたカバープレートであって、該カバープレートと前記基板との間に低減された間隙を形成するカバープレートと、を備えることを特徴とする液浸露光装置。 - 前記低減された間隙は、0.5mmよりも小さいことを特徴とする請求項1に記載の液浸露光装置。
- 前記低減された間隙は、0.1mmよりも小さいことを特徴とする請求項1または2に記載の液浸露光装置。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/285,774 | 2005-11-23 | ||
| US11/285,774 US7633073B2 (en) | 2005-11-23 | 2005-11-23 | Lithographic apparatus and device manufacturing method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010096638A Division JP5161261B2 (ja) | 2005-11-23 | 2010-04-20 | 露光装置及びデバイス製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011071545A true JP2011071545A (ja) | 2011-04-07 |
| JP5161293B2 JP5161293B2 (ja) | 2013-03-13 |
Family
ID=37712481
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006315814A Active JP4616241B2 (ja) | 2005-11-23 | 2006-11-22 | 露光装置及びデバイス製造方法 |
| JP2010096638A Active JP5161261B2 (ja) | 2005-11-23 | 2010-04-20 | 露光装置及びデバイス製造方法 |
| JP2010164859A Active JP5161273B2 (ja) | 2005-11-23 | 2010-07-22 | 露光装置及びデバイス製造方法 |
| JP2010275375A Active JP5161293B2 (ja) | 2005-11-23 | 2010-12-10 | 露光装置及びデバイス製造方法 |
Family Applications Before (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006315814A Active JP4616241B2 (ja) | 2005-11-23 | 2006-11-22 | 露光装置及びデバイス製造方法 |
| JP2010096638A Active JP5161261B2 (ja) | 2005-11-23 | 2010-04-20 | 露光装置及びデバイス製造方法 |
| JP2010164859A Active JP5161273B2 (ja) | 2005-11-23 | 2010-07-22 | 露光装置及びデバイス製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (5) | US7633073B2 (ja) |
| EP (1) | EP1791027A1 (ja) |
| JP (4) | JP4616241B2 (ja) |
| KR (4) | KR100852485B1 (ja) |
| CN (2) | CN102636964B (ja) |
| SG (1) | SG132647A1 (ja) |
| TW (1) | TWI356282B (ja) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7633073B2 (en) * | 2005-11-23 | 2009-12-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP2535744A3 (en) * | 2006-04-03 | 2013-10-09 | Nikon Corporation | Incidence surfaces and optical windows that are solvophobic to immersion liquids used in an immersion microlithography system |
| US8705010B2 (en) | 2007-07-13 | 2014-04-22 | Mapper Lithography Ip B.V. | Lithography system, method of clamping and wafer table |
| TWI541615B (zh) * | 2007-07-13 | 2016-07-11 | 瑪波微影Ip公司 | 在微影裝置中交換晶圓的方法 |
| NL2003575A (en) | 2008-10-29 | 2010-05-03 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
| NL2003638A (en) * | 2008-12-03 | 2010-06-07 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
| NL2008183A (en) | 2011-02-25 | 2012-08-28 | Asml Netherlands Bv | A lithographic apparatus, a method of controlling the apparatus and a device manufacturing method. |
| CN104412164B (zh) | 2012-05-29 | 2017-09-12 | Asml荷兰有限公司 | 支撑装置、光刻装置和器件制造方法 |
| KR101661639B1 (ko) * | 2013-01-11 | 2016-09-30 | 솜닉스 인코포레이티드 | 구강에서 공기 공간을 제거하기 위한 구강 장치 |
| DE102015221209A1 (de) | 2015-10-29 | 2017-05-04 | Carl Zeiss Smt Gmbh | Optische Baugruppe mit einem Schutzelement und optische Anordnung damit |
| CN109037136B (zh) * | 2017-06-12 | 2021-10-26 | 上海新昇半导体科技有限公司 | 支撑台、改善晶圆或外延生长晶圆表面的顶针痕迹的方法 |
| CN110908246A (zh) * | 2018-09-18 | 2020-03-24 | 长鑫存储技术有限公司 | 浸润式曝光机装置及曝光方法 |
| WO2026008215A1 (en) * | 2024-07-02 | 2026-01-08 | Asml Netherlands B.V. | Substrate support assembly |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN102636964A (zh) | 2012-08-15 |
| CN102636964B (zh) | 2016-03-02 |
| KR101234684B1 (ko) | 2013-02-19 |
| JP5161293B2 (ja) | 2013-03-13 |
| JP5161261B2 (ja) | 2013-03-13 |
| TW200725194A (en) | 2007-07-01 |
| US20070114451A1 (en) | 2007-05-24 |
| US20110090474A1 (en) | 2011-04-21 |
| US8481978B2 (en) | 2013-07-09 |
| US7928407B2 (en) | 2011-04-19 |
| CN1971429A (zh) | 2007-05-30 |
| US7633073B2 (en) | 2009-12-15 |
| US20110183257A1 (en) | 2011-07-28 |
| KR100852485B1 (ko) | 2008-08-18 |
| TWI356282B (en) | 2012-01-11 |
| JP2007150308A (ja) | 2007-06-14 |
| JP4616241B2 (ja) | 2011-01-19 |
| JP5161273B2 (ja) | 2013-03-13 |
| KR20070054585A (ko) | 2007-05-29 |
| CN1971429B (zh) | 2012-07-04 |
| EP1791027A1 (en) | 2007-05-30 |
| KR100866583B1 (ko) | 2008-11-03 |
| US20070114452A1 (en) | 2007-05-24 |
| KR20110138198A (ko) | 2011-12-26 |
| KR20080066645A (ko) | 2008-07-16 |
| US20100044593A1 (en) | 2010-02-25 |
| KR101234686B1 (ko) | 2013-02-19 |
| US8138486B2 (en) | 2012-03-20 |
| SG132647A1 (en) | 2007-06-28 |
| JP2010245569A (ja) | 2010-10-28 |
| JP2010171455A (ja) | 2010-08-05 |
| KR20080015037A (ko) | 2008-02-15 |
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