JP2011066130A - Method of manufacturing semiconductor circuit device, semiconductor circuit device, and electronic apparatus - Google Patents

Abstract

A semiconductor circuit device manufacturing method and the like that can easily stabilize the electrical connection between a semiconductor circuit device and an external device.
A semiconductor circuit forming step, a part of an insulating layer 140 surrounding the semiconductor circuit 160 is removed, and the insulating layer 140 is separated from the first insulating portion 140 in contact with the semiconductor circuit 160 and the first insulating portion 140. The first insulating step 140b is separated into the second insulating portion 140b, and the side surface of the second insulating portion 140b on the semiconductor circuit 160 side is inclined, the passivation layer forming step, and the second insulating portion 140b. A second removal step of removing a portion of the portion and the passivation layer 180 in a direction perpendicular to the substrate surface of the transfer source substrate 100, an adhesive curing step of bonding the transfer source substrate 100 and the transfer destination substrate, and a transfer A peeling step of peeling the original substrate 100 and the second insulating portion 140b from the transfer destination substrate or the like.
[Selection] Figure 1

Description

  The present invention relates to a method for manufacturing a semiconductor circuit device, a semiconductor circuit device, and an electronic apparatus, and more particularly, a method for manufacturing a semiconductor circuit device by transferring a semiconductor circuit from a transfer source substrate to a transfer destination substrate, and the method. The present invention relates to a semiconductor circuit device and the like.

  Circuit boards used in thin film semiconductor circuit devices such as electrophoretic display devices, liquid crystal display devices (LCD), and electroluminescence (EL) display devices can be prevented from being damaged by impacts such as dropping of the device, and flexibility can be improved. In some cases, a plastic substrate or the like is used for the purpose of weight reduction. A semiconductor circuit device using such a plastic as a substrate forms a thin film semiconductor circuit as a transfer target on a transfer source substrate such as glass, and transfers the transfer target to a plastic substrate as a transfer destination substrate. It is manufactured by the method to do.

  The semiconductor circuit device manufactured in this way is connected to an external device such as a printed circuit board or another semiconductor circuit device by metal wiring. At that time, an electrode for connecting an external device is provided on the surface opposite to the substrate surface of the semiconductor circuit device, and a method of electrically connecting the electrode and the external device by applying a liquid metal by an inkjet method or the like is used. Sometimes. Here, for example, Patent Document 1 discloses a technique for providing a slope on a side surface of a semiconductor device to improve the stability of electrical connection between the semiconductor device and an external device.

JP-A-10-112473

  However, in a semiconductor circuit device manufactured by a conventional method, there is a case where the structure is not sufficiently considered to connect an external device and an electrode of the semiconductor circuit device using a liquid metal wiring. It was. In the technique disclosed in Patent Document 1, the inclination angle of the inclination provided on the side surface of the semiconductor circuit device in the manufacturing process may not be sufficiently smooth. For this reason, the electrical connection between the external device and the semiconductor circuit device may become unstable, for example, the metal wiring that electrically connects the external device and the electrode of the semiconductor circuit device is disconnected.

  An object of the present invention is to provide a method of manufacturing a semiconductor circuit device that can easily stabilize the electrical connection between the semiconductor circuit device and an external device, and a semiconductor circuit device manufactured by the manufacturing method. One.

  In order to solve such a problem, a manufacturing method of a semiconductor circuit device which is one embodiment of the present invention includes a semiconductor circuit including a conductive wiring on an upper surface over a separation layer formed over a transfer source substrate, and the semiconductor circuit. A semiconductor circuit forming step for forming an insulating layer surrounding the semiconductor circuit; and a part of the insulating layer surrounding the semiconductor circuit is removed by etching to form a first groove portion reaching the peeling layer, thereby forming the insulating layer A first insulating portion that contacts the semiconductor circuit and a second insulating portion that is separated from the first insulating portion, and a side surface of the second insulating portion on the semiconductor circuit side is an inclined surface. A removal step, a passivation layer forming step of forming a passivation layer on the release layer, the semiconductor circuit, the first insulating portion, and the second insulating portion, a part of the second insulating portion, and the One of the passivation layers In a direction perpendicular to the substrate surface of the transfer source substrate to form a second groove portion reaching the release layer, and a surface of the transfer source substrate on which the semiconductor circuit is formed; An adhesive curing step for bonding the transfer source substrate and the transfer destination substrate by curing the adhesive interposed between the transfer destination substrate and the inner layer in the release layer and the release layer The transfer source substrate and the second insulating portion are transferred to the transfer destination substrate by at least one of interface peeling with the transfer source substrate or the semiconductor circuit, and interface peeling between the second insulating portion and the passivation layer, And a peeling step for peeling from the semiconductor circuit and the passivation layer.

  If the edge of the semiconductor circuit device is substantially perpendicular to the substrate, the metal wiring connecting the semiconductor circuit device and the external device is partially thinned, resulting in disconnection or partial electrical resistance. Problems such as an increase occur.

  According to the method for manufacturing a semiconductor circuit device described above, the edge of the semiconductor circuit in the manufactured semiconductor circuit device has a sufficiently gentle slope determined by etching with respect to the substrate. Due to this tilting action, it is possible to prevent disconnection from occurring when the semiconductor circuit device is electrically connected to an external device such as a printed circuit board using metal wiring. Furthermore, it is possible to prevent not only disconnection but also increase in electrical resistance due to thinning of the metal wiring at the connection location. That is, it is possible to stabilize the electrical connection at the connection location.

  In addition, a first layer forming step of forming a first layer on the semiconductor circuit is provided before the first removing step, and in the first removing step, the first layer is formed on the first layer. Enclosing the semiconductor circuit on a first resist film formed to cover the semiconductor circuit in a plan view and on the insulating layer at a predetermined distance from an end of the semiconductor circuit in a plan view Etching is performed using the second resist film formed on the substrate, and the adhesion between the first resist film and the first layer is determined by the adhesion between the second resist film and the insulating layer. Higher than that.

  According to this, in the first removal step, the side surface of the semiconductor circuit is shaped substantially perpendicular to the substrate surface of the transfer source substrate, and the inclined surface of the first peripheral insulating portion is the same substrate surface. On the other hand, it can be made gentler than the side surface of the semiconductor circuit.

  In addition, after the peeling step, an external wiring electrically connected to the conductive wiring of the semiconductor circuit includes an inclined surface of the passivation layer formed by peeling the second insulating portion and the passivation layer. It is preferable to further include an external wiring forming process formed at the location.

  According to this method, the connection between the conductive wiring of the semiconductor circuit and the external device to be connected to the conductive wiring of the semiconductor circuit can be stabilized via the formed external wiring.

  In the external wiring formation step, it is preferable to use a liquid material containing a conductive material as the external wiring. If such a material is used as the external wiring, the conductive wiring of the semiconductor circuit and the external device can be easily connected.

  Moreover, it is preferable that the side surface on the opposite side of the semiconductor circuit of the first insulating portion formed in the first removal step has an inclination closer to the vertical than the inclined surface of the second insulating portion. .

  If the side surface opposite to the semiconductor circuit of the first insulating portion formed in the first removal step has a gentler inclination than the inclined surface of the second insulating portion, the subsequent peeling is performed. When laser light or the like is irradiated in the process, the adhesive force between the passivation layer and the side surface of the first insulating portion opposite to the semiconductor circuit may be unnecessarily reduced. In this case, peeling may occur at the interface between the passivation layer and the side surface of the first insulating portion opposite to the semiconductor circuit.

  According to the above method, it is possible to prevent the adhesive force between the passivation layer and the side surface of the first insulating portion opposite to the semiconductor circuit from being lowered in the peeling step. As a result, the transfer source substrate and the second insulating portion can be appropriately separated from the transfer destination substrate, the semiconductor circuit, and the passivation layer.

  The first layer is preferably a nitride film.

  According to this, the side surface of the semiconductor circuit and the inclined surface of the peripheral insulating portion can be formed into a desired shape relatively easily.

  The present invention also includes a semiconductor circuit device manufactured by any one of the methods described above.

  A semiconductor circuit device according to one embodiment of the present invention includes a substrate and a semiconductor circuit formed over the substrate and having conductive wiring on an upper surface thereof, and the side of the semiconductor circuit where the conductive wiring is formed The side surface of the semiconductor circuit extends from an end of the top of the semiconductor circuit and extends from the end of the inclined surface with the first surface having an inclination with respect to the substrate, and the angle between the substrate and the first surface is And a second surface larger than the first surface.

  According to the semiconductor circuit device having such a configuration, the side surface on the side where the conductive wiring of the semiconductor circuit is formed extends from the top end portion of the semiconductor circuit, and includes the first surface that is inclined with respect to the substrate. Therefore, it is possible to prevent disconnection when the semiconductor circuit device is electrically connected to an external device such as a printed board using metal wiring. Furthermore, it is possible to prevent not only disconnection but also increase in electrical resistance due to thinning of the metal wiring at the connection location. That is, it is possible to stabilize the electrical connection at the connection location.

  Moreover, it is preferable that an external wiring electrically connected to the conductive wiring is formed on the inclined surface.

  In the semiconductor circuit device having such a configuration, the connection between the conductive wiring of the semiconductor circuit and the external device connected to the conductive wiring of the semiconductor circuit can be stabilized via the external wiring.

  The present invention also includes an electronic device including any one of the semiconductor circuit devices described above.

  Since the electronic device having such a configuration has the characteristics of any of the semiconductor circuit devices described above, for example, it is possible to provide an electronic device in which the electrical connection between the semiconductor circuit device and the external device is stable.

The figure which shows the board | substrate with which the semiconductor circuit was formed in the semiconductor circuit formation process. The figure which shows the 1st state in a nitride film formation process. The figure which shows the 2nd state in a nitride film formation process. The figure which shows the 3rd state in a nitride film formation process. The figure which shows the 1st state in a 1st removal process. The figure which shows the 2nd state in a 1st removal process. The figure which shows the 3rd state in a 1st removal process. The figure which shows the state in which the passivation layer was formed in the passivation layer formation process. The figure which shows the 1st state in a 2nd removal process. The figure which shows the 2nd state in a 2nd removal process. The figure which shows the 3rd state in a 2nd removal process. The figure which shows the 1st state in an adhesive agent hardening process. The figure which shows the 2nd state in an adhesive agent hardening process. The figure which shows the 1st state in a peeling process. The figure which shows the 2nd state in a peeling process. The figure which shows the state in which the external wiring was formed in the semiconductor circuit device. The figure which shows the external wiring formation process in a comparative example. 1 is a diagram illustrating a configuration example of an electrophoresis apparatus to which a semiconductor circuit device is applied. FIG. 10 illustrates a configuration example of an electronic book to which a semiconductor circuit device is applied. The figure which shows the structural example of the wristwatch to which a semiconductor circuit device is applied. FIG. 11 illustrates a configuration example of electronic paper to which a semiconductor circuit device is applied.

An embodiment according to the present invention will be specifically described according to the following configuration with reference to the drawings. However, the following embodiments are merely examples of the present invention, and do not limit the technical scope of the present invention. In the drawings, the same parts are denoted by the same reference numerals and description thereof is omitted.
1. Definition 2. Embodiment (1) Semiconductor circuit formation step (2) Nitride film formation step (3) First removal step (4) Passivation layer formation step (5) Second removal step (6) Adhesive curing step (7) Peeling Process (8) External wiring formation process Comparative Example 4 4. Features of the embodiment of the present invention Configuration example of electrophoresis device

<1. Definition>
First, terms used in this specification are defined as follows.

“Adhesive”: refers to a substance capable of adhering one substance to another, and includes a paste-like substance and a film-like substance.
“External device”: Refers to a conductive wiring of a semiconductor circuit device described in this specification and a device connected via the external wiring, for example, a printed circuit board, another semiconductor circuit device, or various electronic devices.
“External wiring”: Conductive wiring used for electrical connection between a semiconductor circuit and an external device in a semiconductor circuit device. The external wiring can be formed by a method such as applying a liquid material containing a conductive material to a predetermined location by an inkjet method, for example.
“Upper surface” and “lower surface”: In a state where a semiconductor circuit or the like is formed on the transfer source substrate, the surface on which the semiconductor circuit or the like is formed is referred to as an upper surface. Moreover, the surface opposite to the upper surface is referred to as the lower surface.
“Semiconductor circuit”: In the manufacturing process of a semiconductor circuit device, a portion excluding a region where a passivation layer is formed is referred to as a semiconductor circuit. In the manufactured semiconductor circuit device, a region including a passivation layer is referred to as a semiconductor circuit.

<2. Embodiment>
The present embodiment, which is an embodiment of the present invention, relates to a method of manufacturing a semiconductor circuit device. One of the characteristic points is that the manufactured semiconductor circuit device has an inclination on an edge of the semiconductor circuit. It is a point. Hereinafter, a method for manufacturing the semiconductor circuit device according to the present embodiment will be specifically described with reference to FIGS.

<(1) Semiconductor circuit formation process>
First, the semiconductor circuit forming process will be described with reference to FIG. Note that a conventional method for forming a semiconductor circuit can be used for the semiconductor circuit formation step.

  FIG. 1 is a diagram showing a substrate on which a semiconductor circuit is formed. As shown in FIG. 1, a release layer 110, a semiconductor element 120, a conductive wiring 130, an insulating part 140, and a nitride film 150 are formed on the transfer source substrate 100. The semiconductor circuit 160 includes the semiconductor element 120, the conductive wiring 130, and a part of the insulating unit 140. Further, as shown in FIG. 1, a plurality of semiconductor circuits 160 can be formed side by side on the transfer source substrate 100. In FIG. 1, a semiconductor circuit adjacent to the semiconductor circuit 160 is located on the right side of the semiconductor circuit 160. Is formed. The mode of forming the plurality of semiconductor circuits 160 is not limited to the mode of the present embodiment, and various modes such as arranging a large number of semiconductor circuits 160 in a matrix can be adopted.

<Transfer source substrate 100>
The transfer source substrate 100 is formed of a material such as glass, but is not limited thereto, and various conventionally known materials can be used. A release layer 110 is formed on the transfer source substrate 100.

<Peeling layer 110>
The release layer 110 is formed on the transfer source substrate 100 with a material having a property of being peeled off by applying predetermined energy. The characteristics refer to the property of causing peeling (also referred to as “in-layer peeling” or “interfacial peeling”, respectively) in the release layer and / or at the interface by irradiating laser light or the like. That is, by irradiating light of a certain intensity, etc., the interatomic or intermolecular bonding force in the atoms or molecules of the material constituting the peeling layer 110 disappears or decreases, and ablation occurs. It causes peeling. As the composition of the peeling layer 110, for example, amorphous (amorphous) silicon (a-Si) or the like is used.

<Semiconductor element 120>
The semiconductor element 120 is formed on the peeling layer 110 with an organic semiconductor material or an inorganic semiconductor material. The semiconductor element 120 is, for example, a transistor or the like, and is a part of the configuration of the semiconductor circuit 160.

<Conductive wiring 130>
The conductive wiring 130 is formed over the separation layer 110 with an organic material or an inorganic material having conductivity. The conductive wiring 130 is used when a predetermined semiconductor element 120 is connected to another semiconductor element, and is a part of the configuration of the semiconductor circuit 160. The conductive wiring 130 is also used as an external connection electrode when electrically connecting the manufactured semiconductor circuit device and an external device such as a printed circuit board. Connection between the semiconductor circuit device and the external device will be described later.

<Insulating part 140>
The insulating portion 140 is formed on the peeling layer 110 with an insulating organic material or inorganic material. The insulating part 140 constitutes a part of the semiconductor circuit 160 and is also formed around the semiconductor circuit 160.

<Nitride film 150>
In the semiconductor circuit formation step, the nitride film 150 is formed on the entire insulating portion 140 including the portion where the semiconductor circuit 160 is formed. The nitride film 150 is made of silicon nitride (silicon nitride) or the like. In the present embodiment, the nitride film 150 is formed in the semiconductor circuit formation process, and the nitride film 150 is processed into a desired shape in the subsequent nitride film formation process. However, the present invention is not limited to this. That is, as will be described later, since the nitride film 150 is used to process the insulating portion 140 into a desired shape by etching, the nitride film having a desired shape is formed before the first removing step in which etching is performed. 150 may be formed.

<Semiconductor circuit 160>
The semiconductor circuit 160 includes the semiconductor element 120, the conductive wiring 130, and a part of the insulating portion 140 with the peeling layer 110 interposed on the transfer source substrate 100.

<(2) Nitride film forming step>
Next, a nitride film 150 having a predetermined shape is formed on the semiconductor circuit 160. As described above, in the present embodiment, the nitride film 150 formed entirely on the insulating portion 140 in the semiconductor circuit formation process is processed into a predetermined shape in the nitride film formation process. Hereinafter, the nitride film forming step will be described in detail with reference to FIGS.

  First, a resist film 170 is formed in order to process the nitride film 150 into a predetermined shape. FIG. 2 is a diagram showing a state in which a resist film 170 is formed on the nitride film 150. The top view of FIG. 2 is a plan view of the transfer source substrate 100, the semiconductor circuit 160, and the like as viewed from the surface on which the resist film 170 is formed (hereinafter also referred to as “upper surface”). The lower view of FIG. 2 is a cross-sectional view taken along a-a ′. 1 to 16 are all cross-sectional views taken along the line a-a ′.

<Resist film 170>
As shown in FIG. 2, the resist film 170 is formed on the nitride film 150 so as to cover the entire semiconductor circuit 160 in plan view. Note that the resist film 170 is formed by a conventional method using a photomask or the like.

  Next, a part of the nitride film 150 is removed by etching using a chemical solution or the like. FIG. 3 is a diagram showing a state in which a part of the nitride film 150 has been removed by etching. As shown in FIG. 3, only the portion of the nitride film 150 where the resist film 170 is formed remains by the etching, and the portion of the nitride film 150 where the resist film 170 is not formed is removed. Here, since the resist film 170 is formed so as to cover the entire semiconductor circuit 160, the nitride film 150 remains in a portion covering the entire semiconductor circuit 160 in plan view. When viewed from above, the insulating portion 140 is exposed at a portion where the resist film 170 is not formed.

  Next, the resist film 170 that has become unnecessary is removed. FIG. 4 is a view showing a state where the resist film 170 is removed. As shown in FIG. 4, the nitride film 150 remains so as to cover the entire semiconductor circuit 160, and the insulating portion 140 is exposed at a portion where the nitride film 150 is removed.

  As described above, the nitride film 150 having a predetermined shape can be formed.

<(3) First removal step>
Next, a part of the insulating part 140 located around the semiconductor circuit 160 is removed by etching, and the peripheral insulating part 140a having an inclined surface separated from the semiconductor circuit 160 is formed. Hereinafter, this process is referred to as a first removal process and will be described in detail with reference to FIGS.

  First, as shown in FIG. 5, the resist film 170 is formed on the insulating portion 140 located around the semiconductor circuit 160 and on the nitride film 150 and slightly inside the nitride film 150 in plan view. Is done. That is, the resist film 170 formed on the nitride film 150 has an area smaller than that of the nitride film 150. When viewed from above, the nitride film 150 is formed so as to cover the entire semiconductor circuit 160, and a resist film 170 is formed slightly inside the region where the nitride film 150 is formed. Outside the region where the nitride film 150 is formed, the insulating portion 140 is exposed in a band shape in plan view, and a resist film 170 is formed further outside.

  Next, part of the insulating portion 140 is removed by etching using a chemical solution or the like. FIG. 6 is a diagram showing a state in which a part of the insulating part 140 has been removed by the etching. As shown in the cross-sectional view of FIG. 6, according to the etching, the insulating portion 140 is not removed perpendicularly to the resist film 170, and is directed from the upper surface side to the lower surface side that first comes into contact with the chemical solution for etching. It can be seen that the removal area gradually decreases. That is, the remaining peripheral insulating portion 140a has a larger width on the lower surface than in the upper surface (hereinafter also referred to as “top”) in the cross section. Further, the difference in the removal area between the upper surface side and the lower surface side in the portion where the nitride film 150 is not formed is larger than the difference in the removal area between the upper surface side and the lower surface side in the portion where the nitride film 150 is formed. I understand. That is, the side surface of the semiconductor circuit 160 on which the nitride film 150 is formed is perpendicular to the side surface of the peripheral insulating portion 140a formed on the portion where only the resist film 170 is formed without the nitride film 150 being formed. It has a slope close to. Note that the wavy line in the plan view of FIG. 6 shows the outline of the surface on the upper surface side of the peripheral insulating portion 140 a covered with the resist film 170.

  This is due to the following mechanism. That is, when the resist film 170 is formed on the nitride film 150 and the resist film 170 is formed on the insulating film 140, the former interface has higher adhesion than the latter interface. Become. Etching liquid enters the interface between the insulating film 140 and the resist film 170 with low adhesion, and etching proceeds in the horizontal direction with respect to the transfer source substrate 100. On the other hand, the etching solution does not enter the interface between the nitride film 150 and the resist film 170 with high adhesion, and the etching proceeds so as to have a shape closer to the vertical. In this way, it becomes possible to etch into the shape as described above. Here, the etching as described above is possible by using HF (hydrofluoric acid) as an etching solution. However, the etchant is not necessarily limited to HF, and other etchants having similar characteristics may be used.

  Next, the resist film 170 that has become unnecessary is removed. FIG. 7 is a view showing a state where the resist film 170 has been removed. As shown in FIG. 7, in a plan view, the peeling layer 110 is exposed outside the region where the semiconductor circuit 160 is formed, and a peripheral insulating portion 140a is formed outside. In other words, an opening in which the peeling layer 110 is exposed is formed between the semiconductor circuit 160 and the peripheral insulating portion 140a. Further, as can be seen from the cross-sectional view of FIG. 7, the peripheral insulating portion 140a has an inclined surface. Although the inclination angle of the inclined surface of the peripheral insulating portion 140a with respect to the transfer source substrate 100 is determined by etching conditions, it is formed to be, for example, 30 ° or less. Note that the nitride film 150 formed so as to cover the semiconductor circuit 160 and the insulating portion 140 which is a part of the configuration of the semiconductor circuit 160 can be seen from the upper surface.

  As described above, a part of the insulating portion 140 located around the semiconductor circuit 160 is removed by etching, and the peripheral insulating portion 140a that is separated from the semiconductor circuit 160 and has an inclined surface on the side surface facing the semiconductor circuit 160 is separated. Can be formed.

  In the present embodiment, the resist film 170 on the semiconductor circuit 160 is formed on the insulating part 140 located in the periphery of the semiconductor circuit 160 and on the nitride film 150 and slightly inside the nitride film 150 in plan view. However, the present invention is not limited to this. That is, it is only necessary that the side surface of the semiconductor circuit 160 can be etched so as to have an inclination closer to the vertical than the side surface of the peripheral insulating portion 140a. Therefore, for example, the resist film 170 may be formed so as to cover the semiconductor circuit 160 with substantially the same area as the semiconductor circuit 160.

<(4) Passivation layer forming step>
Next, a passivation layer 180 is formed on the transfer source substrate 100, the semiconductor circuit 160, and the peripheral insulating portion 140a. FIG. 8 is a diagram illustrating a state in which the passivation layer 180 is formed. As shown in FIG. 8, the passivation layer 180 is formed on the transfer source substrate 100, the semiconductor circuit 160, and the peripheral insulating portion 140a so as to cover them. The passivation layer 180 is also formed in the opening between the semiconductor circuit 160 and the peripheral insulating portion 140a. That is, as can be seen from the plan view of FIG. 8, the passivation layer 180 is formed so as to cover the entire transfer source substrate 100.

<Passivation layer 180>
Here, the passivation layer 180 is formed of an insulating organic material or inorganic material, and also serves as a protective layer of the manufactured semiconductor circuit 160.

<(5) Second removal step>
Next, a part of the peripheral insulating portion 140 a and the passivation layer 180 including the top of the peripheral insulating portion 140 a is removed in a direction perpendicular to the substrate surface of the transfer source substrate 100. Hereinafter, this process will be specifically described as a second removal process with reference to FIGS.

  First, as shown in FIG. 9, a resist film 170 is formed on the entire upper portion of the transfer source substrate 100 in a plan view, avoiding the portion including the top of the peripheral insulating portion 140a. In other words, it can be said that the resist film 170 is formed on the entire upper surface portion of the transfer source substrate 100 by providing a partial opening above the top of the peripheral insulating portion 140a.

  Next, as shown in FIG. 10, a part of the peripheral insulating portion 140 a and the passivation layer 180 in a portion where the resist film 170 is not formed is transferred to the transfer source substrate by isotropic etching or dry etching using a chemical solution or the like. 100 is removed in a direction perpendicular to the substrate surface. Thereby, when viewed from above, the peeling layer 110 is exposed in the portion where the peripheral insulating portion 140a and the passivation layer 180 are removed. Further, the peripheral insulating part 140a is separated on the release layer 110 into a first peripheral insulating part 140b and a second peripheral insulating part 140c.

  Next, the resist film 170 that has become unnecessary is removed. FIG. 11 is a view showing a state where the resist film 170 has been removed. As shown in FIG. 11, when viewed in plan, an opening is provided in the passivation layer 180, and the release layer 110 is exposed in the opening.

  As described above, a part of the peripheral insulating portion 140 a and the passivation layer 180 including the top of the peripheral insulating portion 140 a can be removed in a direction perpendicular to the substrate surface of the transfer source substrate 100.

<(6) Adhesive curing step>
Next, the transfer source substrate 100 and the transfer destination substrate 200 are bonded together by curing the adhesive 210 interposed between the transfer source substrate 100 and the transfer destination substrate 200. Hereinafter, the adhesive curing step will be specifically described with reference to FIGS. 12 and 13.
First, as shown in FIG. 12, an adhesive 210 is attached to the prepared transfer destination substrate 200. The adhesive 210 can be attached to the transfer destination substrate 200 by application or the like.

<Transfer destination substrate 200>
Unlike the transfer source substrate 100, the transfer destination substrate 200 is a substrate of a completed semiconductor circuit device, and is thus made of a material having desired properties to be provided as a semiconductor circuit device. As a material of the transfer destination substrate 200, a material having one or a plurality of characteristics such as flexibility, permeability, impact resistance, and lightness can be selectively applied. For example, plastic or the like is applied. Is done.

<Adhesive 210>
The adhesive 210 is composed of a material capable of bonding the transfer source substrate 100 and the transfer destination substrate 200, and is made of a material having a property of being cured by applying some energy such as ultraviolet rays.

  Next, as shown in FIG. 13, the transfer destination substrate 200 to which the adhesive 210 is attached and the transfer source substrate 100 are pressed against each other, and the adhesive 210 is interposed between the transfer source substrate 100 and the transfer destination substrate 200. The state is interposed. Then, for example, the adhesive 210 is cured by irradiating ultraviolet rays from the transfer destination substrate 200 side.

  As described above, it is possible to cure the adhesive 210 having the transfer source substrate 100 and the transfer destination substrate 200 disposed so as to face each other and bond the transfer source substrate 100 and the transfer destination substrate 200 together.

  In this embodiment, the method of attaching the adhesive 210 to the transfer destination substrate 200 is used. However, a method of attaching the adhesive 210 to the upper surface side of the transfer source substrate 100 may be used. In this case, the adhesive 210 is attached to the passivation layer 180.

  In the above example, the adhesive 210 having a property of being cured by irradiation with ultraviolet rays is used, but an adhesive 210 having other properties may be used. For example, besides irradiating with ultraviolet rays, a thermosetting adhesive having a property of being cured by heat treatment may be used as the adhesive 210, or an adhesive 210 having a property of being cured with time may be used. Properties of adhesive can be used.

<(7) Peeling step>
Next, at least one of in-layer peeling and interface peeling in the peeling layer 110 and interface peeling between the first peripheral insulating portion 140b and the passivation layer 180 are caused. As a result, the transfer source substrate 100 and the first peripheral insulating portion 140b are peeled off from the transfer destination substrate 200, the semiconductor circuit 160, and the passivation layer 180. Hereinafter, the peeling process will be specifically described with reference to FIGS.

  First, as shown in FIG. 14, the laser beam 300 is irradiated from the transfer source substrate 100 side. Here, the laser beam 300 is applied to a portion excluding a part of the interface between the peeling layer 110 and the first peripheral insulating portion 140b in a plan view. As a result, of the peeling layer 110 on the transfer source substrate 100, a part where the semiconductor circuit 160 is formed, a part where the passivation layer 180 is formed, and a part of a part where the first peripheral insulating part 140b is formed. Alter it. In addition, the laser beam 300 is used when the interface between the passivation layer 180 and the insulating portion 140 or 140b has an angle closer to the perpendicular to the irradiation direction of the laser beam 300 than a predetermined angle. It also has the effect of reducing the adhesive force. Here, the laser beam 300 is irradiated substantially perpendicularly to the substrate surface of the transfer source substrate 100. Since the interface between the passivation layer 180 and the first peripheral insulating portion 140 b has an inclination angle of 30 ° or less with respect to the substrate surface of the transfer source substrate 100, it is 60 with respect to the irradiation direction of the laser light 300. It is formed at an angle of more than °. In this case, the adhesive force at the interface between the passivation layer 180 and the first peripheral insulating portion 140b is reduced by the action of the laser beam 300. On the other hand, the interface between the passivation layer 180 and the insulating portion 140 of the semiconductor circuit 160 has a shape that is nearly perpendicular to the substrate surface of the transfer source substrate 100. Therefore, the adhesive force at the interface between the passivation layer 180 and the insulating part 140 of the semiconductor circuit 160 is hardly reduced. That is, it is the interface between the altered release layer 190 and the passivation layer 180 and the first peripheral insulating portion 140b that has a reduced adhesive force due to the irradiation of the laser beam 300.

  Next, as shown in FIG. 15, the transfer source substrate 100 and the transfer destination substrate 200 are separated. Here, the altered release layer 190 causes at least one of in-layer release and interface release. Further, interface peeling occurs between the first peripheral insulating portion 140b and the passivation layer 180. Note that the peeling layer 110 formed between the first peripheral insulating portion 140b and the transfer source substrate 100 has deteriorated in part and deteriorated adhesive strength, but has deteriorated in other parts. The adhesive strength is maintained. Therefore, the first peripheral insulating portion 140b remains on the transfer source substrate 100 side. That is, the transfer source substrate 100 and the first peripheral insulating portion 140b are peeled from the transfer destination substrate 200, the semiconductor circuit 160, and the passivation layer 180.

  The semiconductor circuit device can be manufactured through the above steps.

<Manufactured semiconductor circuit device>
The manufactured semiconductor circuit device has a configuration as shown in the lower diagram of FIG. That is, the semiconductor circuit device includes a transfer destination substrate 200 as a substrate, and a semiconductor circuit 160 including a passivation layer 180 formed on the transfer destination substrate 200. The inclination angle of the inclined surface on the edge of the semiconductor circuit 160 with respect to the transfer destination substrate 200 is 30 ° or less. A cured adhesive 210 is interposed between the transfer destination substrate 200 and the semiconductor circuit 160. Further, the passivation layer 180 which is a part of the configuration of the semiconductor circuit 160 is formed to include the periphery of the region where the semiconductor element 120, the conductive wiring 130, and the insulating portion 140 are formed. The conductive wiring 130 is exposed to the outside of the semiconductor circuit 160 on the surface (upper surface) opposite to the transfer destination substrate 200 in the semiconductor circuit device, and is used as an external connection electrode that can be connected to an external device.

  The semiconductor circuit 160 further has a vertical surface substantially perpendicular to the transfer destination substrate 200 at the tip of the inclined surface. Thereby, the thickness of the end portion of the semiconductor circuit 160 can be ensured. Therefore, for example, even if the transfer destination substrate 200 is deformed, there is a possibility that a crack is generated at the end of the semiconductor circuit 160 and the external wiring 220 described later can be prevented from being disconnected. The above-described vertical surface only needs to have a larger inclination angle with respect to the substrate than the inclined surface, and is preferably formed perpendicular to the substrate as described above.

  Further, the end portion of the semiconductor circuit 160 has a parallel surface substantially parallel to the transfer destination substrate 200 between the inclined surface and the vertical surface. That is, the external wiring 200 reaches the upper surface of the transfer destination substrate 200 via the upper surface, inclined surface, parallel surface, and vertical surface of the semiconductor circuit 160.

<(8) External wiring formation process>
Next, the external wiring 220 electrically connected to the conductive wiring 130 of the semiconductor circuit 160 is formed at a location including the inclined surface of the passivation layer 180 formed by peeling off the peripheral insulating portion 140b and the passivation layer 180. The inclined surface of the passivation layer 180 is an inclined surface of the edge of the manufactured semiconductor circuit device.

  FIG. 16 is a diagram illustrating a state in which the external wiring 220 is formed in the semiconductor circuit device. As shown in FIG. 16, an external wiring 220 electrically connected to the conductive wiring 130 exposed outside the semiconductor circuit 160 is formed on the semiconductor circuit 160.

<External wiring 220>
The external wiring 220 is a conductive wiring including a metal wiring formed by, for example, a method of applying a liquid material including a conductive material using an inkjet method. Specifically, the external wiring 220 is formed by applying a liquid material and then heating to remove the solvent component. As the liquid material, for example, conductive fine particles obtained by finely dividing a conductive material such as Au, Ag, and Cu to about 10 nm and dispersed in a solvent such as tetradecane are used. However, the liquid material is not limited thereto. . That is, the external wiring 220 can also be realized by conventional techniques other than those described above.

  In this manner, the external wiring 220 that is electrically connected to the conductive wiring 130 is formed on the inclined surface at the edge of the semiconductor circuit 160. With this external wiring 220, the conductive wiring 130 can be connected to an external device. That is, electrical connection between the semiconductor circuit device and the external device becomes possible.

<3. Comparative Example>
Here, in order to make the features of the embodiment of the present invention easier to understand, a comparative example will be described with reference to FIG.

  FIG. 17 is a diagram showing an external wiring forming process in this comparative example. In this comparative example, the edge of the semiconductor circuit 160 including the passivation layer 180 is formed perpendicular to the transfer destination substrate 200. Here, in order to electrically connect the semiconductor circuit device and the external device, the external wiring electrically connected to the conductive wiring 130 exposed outside the semiconductor circuit 160 on the semiconductor circuit 160 in the semiconductor circuit device. 220 is formed. In this case, as shown in FIG. 17, since the edge of the semiconductor circuit 160 is perpendicular to the transfer destination substrate 200, the external wiring 220 on the edge of the semiconductor circuit 160 is disconnected or partially Problems such as an increase in electrical resistance may occur.

<4. Features of Embodiments of the Present Invention>
In contrast to the comparative example, in the embodiment of the present invention, the edge of the semiconductor circuit 160 in the manufactured semiconductor circuit device has a sufficiently gentle inclination with respect to the transfer destination substrate 200. Due to the action of the inclination, it is possible to prevent the disconnection from occurring when the semiconductor circuit device is electrically connected to the external device using the external wiring 220. Furthermore, it is possible to prevent not only the disconnection but also the increase in electrical resistance due to the thin external wiring 220 at the connection location. That is, it is possible to stabilize the electrical connection at the connection location.

  In the above embodiment, the first layer forming step of forming the nitride film 150 as the first layer on the semiconductor circuit 160 is included before the first removing step. In the first removal step, the first portion of the resist film 170 formed on the first layer so as to cover the semiconductor circuit 160 in plan view and the end of the semiconductor circuit 160 in plan view. Etching is performed on the insulating layer 140 at a predetermined distance using the second portion of the resist film 170 formed so as to surround the semiconductor circuit 160, and the first portion of the resist film 170 and the above-described portion Adhesion with the nitride film as the first layer is higher than adhesion between the second portion of the resist film 170 and the insulating layer 140. According to this, in the first removal step, the side surface of the semiconductor circuit 160 is shaped to be nearly perpendicular to the substrate surface of the transfer source substrate 100, and the inclined surface of the first peripheral insulating portion 140b is with respect to the substrate surface. Thus, it can be made smoother than the side surface of the semiconductor circuit.

  Furthermore, the first layer is preferably a nitride film. Thereby, the side surface of the semiconductor circuit 160 and the inclined surface of the first peripheral insulating portion 140b can be formed into a desired shape relatively easily.

  Moreover, in the said embodiment, the inclination | tilt angle of the inclined surface of the peripheral insulating part 140b formed at a 1st removal process is 30 degrees or less as an example. By reducing the inclination angle in this way, the edge of the semiconductor circuit 160 in the manufactured semiconductor circuit device has an appropriate inclination with respect to the transfer destination substrate 200, and the semiconductor circuit using the external wiring 220 is used. The electrical connection between the apparatus and the external device can be made sufficiently stable.

  Here, if the inclination angle of the inclined surface of the first peripheral insulating portion 140b is closer to the vertical, the adhesive force between the passivation layer 180 and the first peripheral insulating portion 140b causes the laser beam 300 or the like to It may not decrease sufficiently despite irradiation. Here, the passivation layer 180 and the first peripheral insulating portion 140b should be subjected to interface peeling in the peeling step. In the above case, the interface peeling between the passivation layer 180 and the first peripheral insulating portion 140b is appropriately performed. The first peripheral insulating part 140b and the transfer source substrate 100 may be peeled off without being performed. Then, only the transfer source substrate 100 is peeled from the transfer destination substrate 200, the semiconductor circuit 160, the passivation layer 180, and the first peripheral insulating portion 140b.

  According to the method of the present embodiment, since the inclination angle of the inclined surface of the first peripheral insulating portion 140b formed in the first removal process is moderately gentle, the passivation layer 180 and the first Interfacial peeling from the peripheral insulating portion 140b can be performed appropriately. As a result, the transfer source substrate 100 and the first peripheral insulating portion 140b can be appropriately separated from the transfer destination substrate 200, the semiconductor circuit 160, and the passivation layer 180.

  Furthermore, the method of the present embodiment further includes an external wiring forming step after the peeling step. In the external wiring forming step, the inclined surface of the passivation layer 180 formed by peeling the external wiring 220 electrically connected to the conductive wiring 130 of the semiconductor circuit 160 from the first peripheral insulating portion 140b and the passivation layer 180 is used. It forms in the place to include. Accordingly, the connection between the conductive wiring 130 of the semiconductor circuit 160 and the external device to be connected to the conductive wiring 130 of the semiconductor circuit 160 can be stabilized via the formed external wiring 220.

  Here, if the side surface of the semiconductor circuit 160 formed in the first removal step has a gentler inclination than the inclined surface of the first peripheral insulating portion 140b, the passivation layer 180 and the semiconductor circuit in the subsequent peeling step. The adhesive force with the side surface of 160 may be reduced. In this case, separation may occur at the interface between the passivation layer 180 and the side surface of the semiconductor circuit 160.

  In the method of the present embodiment, the side surface of the semiconductor circuit 160 formed in the first removal step has an inclination closer to the transfer source substrate 100 than the inclined surface of the first peripheral insulating portion 140b. . Thereby, it is possible to prevent a decrease in the adhesive force between the passivation layer 180 and the side surface of the semiconductor circuit 160 in the peeling process. As a result, the transfer source substrate 100 and the first peripheral insulating portion 140b can be appropriately separated from the transfer destination substrate 200, the semiconductor circuit 160, and the passivation layer 180.

  Note that it is preferable from experience that the side surface of the semiconductor circuit 160 formed in the first removal step has an angle of 75 ° to 90 ° with respect to the transfer source substrate 100.

  In addition, the semiconductor circuit device of the present embodiment includes a transfer destination substrate 200 as a substrate, and a semiconductor circuit 160 formed on the substrate 200 and having a conductive wiring 130 on the upper surface. The side surface of the semiconductor circuit 160 on which the conductive wiring 130 is formed extends from the top end of the semiconductor circuit 160 and has a first surface that is inclined with respect to the substrate 200 and an end of the inclined surface. And a second surface extending from the portion and having an angle with the substrate 200 greater than the first surface. According to the semiconductor circuit device having such a configuration, it is possible to prevent the disconnection from occurring when the semiconductor circuit device is electrically connected to the external device using the external wiring 220. Furthermore, it is possible to prevent not only the disconnection but also the increase in electrical resistance due to the thin external wiring 220 at the connection location. That is, it is possible to stabilize the electrical connection at the connection location.

  In the present embodiment, all the edges of the semiconductor circuit 160 are inclined with respect to the transfer destination substrate 200. However, not all the edges are necessarily inclined. That is, if at least one edge of the semiconductor circuit 160 has an inclined surface with an inclination angle of 30 ° or less, the electrical connection between the semiconductor circuit device using the external wiring 220 and the external device at the edge is stabilized. be able to.

  Further, the semiconductor circuit 160 in the semiconductor circuit device has a conductive wiring 130, and an external wiring 220 that is electrically connected to the conductive wiring 130 is formed on the inclined surface at the end of the semiconductor circuit 160. Accordingly, the semiconductor circuit device can stabilize the connection between the conductive wiring 130 of the semiconductor circuit 160 and the external device connected to the conductive wiring 130 of the semiconductor circuit 160 via the external wiring 220.

<5. Configuration example of electrophoresis apparatus>
FIG. 18 is a diagram showing a configuration example of an electrophoresis apparatus as an electro-optical device, which is an application example of the semiconductor circuit device manufactured according to the present embodiment. Part or the whole of the electrophoresis apparatus described below can be formed by the semiconductor circuit apparatus described above.

  As shown in FIG. 18, the electrophoretic device 400 includes a pixel region 410, a scanning line driving circuit 420, a data line driving circuit 430, a counter electrode control circuit 440, and a driving circuit 450. In the electrophoretic device 400, the pixel region 410, the scanning line driving circuit 420, the data line driving circuit 430, the counter electrode control circuit 440, and the driving circuit 450 are all formed as the semiconductor circuit 160.

  The pixel region 410 of this embodiment is composed of a plurality of pixels. On the other hand, a scanning line driving circuit 420, a data line driving circuit 430, and a counter electrode control circuit 440 are formed in the peripheral region of the pixel region 410. In the pixel region 410, a plurality of scanning lines 401 are formed in parallel along the X direction shown in the figure. In addition, a plurality of data lines 402 are formed in parallel along the Y direction orthogonal thereto. Each pixel is arranged in a matrix corresponding to the intersection of the scanning line 401 and the data line 402.

  A drive circuit 450 is provided in the peripheral circuit of the electrophoresis apparatus 400. The drive circuit 450 includes a display signal generation unit and a timing generator. Here, the display signal generation unit generates an image signal and a counter electrode control signal, and inputs them to the data line driving circuit 730 and the counter electrode control circuit 440, respectively. The counter electrode control circuit 440 supplies 0 V as a reference voltage to the counter electrode. Further, the timing generator generates various timing signals for controlling the scanning line driving circuit 420 and the data line driving circuit 430 when a reset setting or an image signal is output from the display signal generation unit.

  The electrophoretic device is merely an example of an electro-optical device, and the semiconductor circuit device of the present embodiment can be applied to various electro-optical devices such as a liquid crystal display device and an electrical engineering display device.

<6. Configuration example of electronic device>
19 to 21 are diagrams showing specific examples of electronic equipment including the semiconductor circuit device of this embodiment.

  FIG. 19 shows an example in which an electrophoresis apparatus 400 including the semiconductor circuit device of this embodiment is applied to an electronic book 600. As shown in FIG. 19, the electronic book 600 includes an electrophoresis device 400, a lid 601, operation buttons 602, and an outer frame 603. The electronic book 600 can write a memo in the electrophoresis apparatus 400. FIG. 20 shows an example in which an electrophoresis apparatus 400 provided with the semiconductor circuit device of this embodiment is applied to a wrist watch 700. As shown in FIG. 20, the wristwatch 700 includes an electrophoresis device 400 as a display device that displays time and the like. FIG. 21 shows an example in which an electrophoresis apparatus 400 including the semiconductor circuit device of this embodiment is applied to an electronic paper 800. As shown in FIG. 21, the electronic paper 800 includes an electrophoresis device 400 and an outer frame portion 801. A semiconductor circuit device used for the electronic paper is formed on a substrate made of a flexible material, and the outer frame portion 801 is also formed of a flexible material.

  As described above, an electronic apparatus including the semiconductor circuit device according to the present embodiment has the characteristics of any of the semiconductor circuit devices described above. For example, an electronic apparatus in which the electrical connection between the semiconductor circuit device and the external device is stable is provided. It becomes possible to provide.

DESCRIPTION OF SYMBOLS 100 ... Transfer substrate, 110 ... Release layer, 120 ... Semiconductor element, 130 ... Conductive wiring, 140 ... Insulating part, 140a ... Peripheral insulating part, 140b ... First peripheral insulating part, 140c ... ... Second peripheral insulating part, 150 ... Nitride film, 160 ... Semiconductor circuit, 170 ... Resist film, 180 ... Passivation layer, 190 ... Peeling layer, 200 ... Destination substrate, 210 ... Adhesive 220 ... External wiring, 300 ... Laser light, 400 ... Electrophoresis device, 401 ... Scanning line, 402 ... Data line, 410 ... Pixel area, 420 ... Scanning line drive circuit, 430 ... Data Line drive circuit, 440 ... Counter electrode control circuit, 450 ... Drive circuit, 600 ... Electronic book, 601 ... Cover part, 602 ... Operation button, 603 ... Outer frame part, 700 ... Watch, 730 ... ... Data over line drive circuit, 800 ...... electronic paper, 801 ...... outer frame portion

Claims (9)

Forming a semiconductor circuit including a conductive wiring on the upper surface and an insulating layer surrounding the semiconductor circuit on the release layer formed on the transfer source substrate; and
A part of the insulating layer surrounding the semiconductor circuit is removed by etching, and a first groove reaching the peeling layer is formed, so that the insulating layer contacts the semiconductor circuit, and the first insulating portion A first removing step in which the second insulating portion is separated from the first insulating portion, and the side surface on the semiconductor circuit side of the second insulating portion is inclined.
A passivation layer forming step of forming a passivation layer on the release layer, the semiconductor circuit, the first insulating portion, and the second insulating portion;
A second removing step of removing a part of the second insulating part and a part of the passivation layer in a direction perpendicular to the substrate surface of the transfer source substrate to form a second groove part reaching the peeling layer. When,
An adhesive curing step of bonding the transfer source substrate and the transfer destination substrate by curing an adhesive interposed between the surface of the transfer source substrate on which the semiconductor circuit is formed and the transfer destination substrate. When,
At least one of intra-layer peeling in the peeling layer and interfacial peeling between the peeling layer and the transfer source substrate or the semiconductor circuit, and interfacial peeling between the second insulating portion and the passivation layer, the transfer source substrate and the A method of manufacturing a semiconductor circuit device, comprising: a peeling step of peeling the second insulating portion from the transfer destination substrate, the semiconductor circuit, and the passivation layer. A first layer forming step of forming a first layer on the semiconductor circuit before the first removing step;
In the first removal step, a first resist film formed on the first layer so as to cover the semiconductor circuit in a plan view, and a predetermined distance from an end of the semiconductor circuit in a plan view Etching using the second resist film formed so as to surround the semiconductor circuit on the insulating layer at a distant place,
2. The semiconductor circuit device according to claim 1, wherein adhesion between the first resist film and the first layer is higher than adhesion between the second resist film and the insulating layer. Production method. After the peeling step, an external wiring electrically connected to the conductive wiring of the semiconductor circuit is provided at a location including the inclined surface of the passivation layer formed by peeling the second insulating portion and the passivation layer. The method for manufacturing a semiconductor circuit device according to claim 1, further comprising a step of forming an external wiring to be formed. The side surface of the first insulating portion formed in the first removing step opposite to the semiconductor circuit has an inclination closer to the vertical than the inclined surface of the second insulating portion. The method for manufacturing a semiconductor circuit device according to claim 1. The method for manufacturing a semiconductor circuit device according to claim 1, wherein the first layer is a nitride film.   A semiconductor circuit device manufactured by the method for manufacturing a semiconductor circuit device according to claim 1. A substrate,
A semiconductor circuit formed on the substrate and having conductive wiring on the upper surface,
The side surface of the semiconductor circuit where the conductive wiring is formed is
A first surface extending from the top end of the semiconductor circuit and having an inclination with respect to the substrate;
A semiconductor circuit device, comprising: a second surface extending from an end of the inclined surface and having an angle with the substrate that is greater than the first surface. The semiconductor circuit device according to claim 7, wherein an external wiring electrically connected to the conductive wiring is formed on the inclined surface.   An electronic apparatus comprising the semiconductor circuit device according to claim 6.

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