JP2011064513A - Element and apparatus for measuring temperature, substrate processing apparatus, and method for manufacturing electronic device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a temperature measurement element for correctly measuring an absolute temperature at a plurality of points on the entire surface of a substrate, a temperature measurement apparatus, a substrate processing apparatus and a method for manufacturing an electronic device since the absolute temperature is required to be correctly measured on the substrate with a high definition of a semiconductor, and a high resolution of an image apparatus in recent years. <P>SOLUTION: The temperature measurement apparatus includes: the substrate; a first film as an electrically-insulating material disposed on one surface of the substrate, and having the thermal conductivity larger than the substrate; a first thermocouple metal disposed on the surface of the first film opposite to the substrate; and a second thermocouple metal having a portion contacting the first thermocouple metal. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

The present invention relates to a temperature measuring element, a temperature measuring apparatus, a substrate processing apparatus, and an electronic device manufacturing method.

In the conventional substrate temperature measurement in the manufacturing process of a semiconductor device or a display device or the like, for example, as shown in Non-Patent Document 1, a probe manufactured by embedding a thermocouple in a substrate is used. It was.

Also. In Patent Document 1, a structure of different types of thermocouple metals in contact with each other patterned on an insulating substrate such as a glass substrate is prepared using a lithogoff method, and the contact of the different types of thermocouple metals is used as a thermocouple. Thus, a method for measuring the temperature of the substrate is disclosed.

Japanese Patent Laid-Open No. 3-10130

Yasuhiro Kudo “Sensor-embedded wireless wafer temperature measuring instrument for the first time” (searched on June 8, 2009), Internet <URL: http: // techon. nikkeibp. co. jp / members / NMMDNEWS / 20031203/100856 /? ST = print>

With the recent high integration of semiconductor devices and high definition of image devices, it is required to accurately measure the absolute temperature on the substrate. An object of the present invention is to provide a temperature measuring element, a temperature measuring apparatus, a substrate processing apparatus, and an electronic device manufacturing method capable of accurately measuring an absolute temperature at a plurality of points over the entire surface of the substrate.

In order to solve the above-mentioned problems, a temperature measuring element according to the present invention is a first insulating material having a larger thermal conductivity than the substrate located on one surface of the substrate on one side of the substrate. The film has a first thermocouple metal located on the opposite side of the substrate of the first film and a second thermocouple metal having a portion in contact with the first thermocouple metal.

  In order to solve the above problems, a temperature measuring device of the present invention includes the first temperature measuring element described above and the second temperature measuring element described above, and the first temperature measuring element and the A switching means is provided between the second temperature measuring elements.

In order to solve the above problems, a substrate processing apparatus according to the present invention is configured to include the temperature measuring apparatus described above.

In order to solve the above problems, an electronic device manufacturing method according to the present invention provides an electronic device manufacturing method including a step of using temperature data obtained by using the temperature measuring apparatus.

According to the present invention, the absolute temperature can be accurately measured at a plurality of points over the entire surface of the substrate.

It is a schematic block diagram regarding the 1st Example of the temperature measuring element concerning this invention. It is a schematic block diagram regarding the 2nd Example of the temperature measuring element concerning this invention. It is explanatory drawing regarding the manufacturing process of one temperature measurement element in the 1st Example of the board | substrate measurement element concerning this invention. It is explanatory drawing regarding the manufacturing process of the 2nd Example of the board | substrate measuring element concerning this invention. It is explanatory drawing regarding the temperature measuring apparatus which uses the temperature measuring element concerning this invention. It is explanatory drawing regarding the other temperature measuring apparatus which uses the temperature measuring element concerning this invention. It is explanatory drawing regarding the substrate processing apparatus which uses the temperature measuring apparatus concerning this invention. It is a schematic block diagram regarding the conventional temperature measuring element.

As one of the conventional temperature measuring elements, there is one shown in FIG. In FIG. 8, 100 is a thermocouple portion, 1 is an insulating substrate made of glass, for example, 3 is a first thermocouple metal made of aluminum, for example, and 4 is a second thermocouple metal made of chromium, for example.

Such a structure is manufactured by a so-called lithography technique in which film formation, application of a resist mask, exposure, development, etching, and the like are repeated as many times as necessary.

With such a structure, the first thermocouple metal 3 and the second thermocouple metal 4 are substantially short-circuited when the substrate is not an insulator such as glass but is applied to Si or the like having a small specific resistance doped with impurities. There is a problem that the thermoelectromotive force generated at the contact portion between the first thermocouple metal 3 and the second thermocouple metal 4 cannot be measured.

In addition, since the thermocouple metal is in direct contact with the substrate, when the substrate 1 is Si, the thermocouple metal is thermally diffused into the Si substrate and contaminates the substrate, or the manufacturing processing apparatus is contaminated, and the substrate is subsequently removed. There is also the problem of contamination.

In order to solve the above-mentioned problem, if an insulating film such as a Si oxide film is positioned between the first thermocouple metal 3, the second thermocouple metal 4 and the substrate 1, When a large amount of heat flows across the substrate, a large temperature difference occurs between the substrate temperature and the side of the insulator opposite to the substrate.

More specifically, if an insulator having a low thermal conductivity exists between the thermocouple metal (3, 4) and the substrate 1, the flow of heat is reduced there. As a result, when a certain amount of heat constantly flows, a large temperature difference occurs between the upper surface and the lower surface of the insulator. As a result, the temperature of the substrate itself changes due to the presence of the insulating portion having a small thermal conductivity.

The substrate is placed on a holder. Usually, a heater is embedded in the holder or a flow path for circulating a refrigerant is provided so that the temperature can be controlled.

However, if the thermal conductivity of the insulator is small, the temperature of the holder that can directly control the temperature and the temperature on the side opposite to the insulating film of the substrate where the process such as film formation or etching is performed are greatly separated. Also occurs.

For example, in a resist process, it is said that an error of about 1.5 nm is generated when a temperature of 0.1 degree is changed (Non-Patent Document 1). As shown symbolically in this fact, the absolute temperature of the substrate is accurately measured and the substrate temperature is accurately controlled based on the higher integration of the semiconductor device or the higher definition of the image display device. It has become an important issue.

Here, the absolute temperature is not a temperature difference at a different position, but may be a unit such as K, ° C, or ° F, but it means the temperature itself at that position. The use of this term shall be consistent throughout the specification, claims, drawings and abstract unless otherwise indicated.

  Hereinafter, the present invention will be further described with reference to the drawings.

  FIGS. 1A to 1C each show an invention in which the wiring from the temperature measuring element is wired on the same side as the side on which the thermocouple metal is located with respect to the substrate.

FIG. 1A shows a temperature measuring element 100 according to the present invention. 1 is a Si substrate, 2 is a base film made of an electrically insulating material having a high thermal conductivity such as AlN, 3 is a first thermocouple metal, 4 is a second thermocouple metal, and 5 is a high thermal conductivity such as Ti. It is a cap layer made of an electrically insulating material having a high thermal conductivity such as a metal or AlN. There is a function to prevent the second thermocouple metal 4 from coming into direct contact with the object to be measured. Reference numeral 6 denotes a metal film layer made of, for example, copper, etc., which functions to reflect light and suppress the occurrence of measurement errors due to the influence of radiation. Reference numeral 7 denotes an electrical insulating film. 9 is a connection terminal.
FIG. 1B differs from FIG. 1A in that the wiring material of the temperature measurement element is not the first thermocouple metal 3 and the second thermocouple metal 4 but a normal semiconductor device. That is, the wiring-dedicated material 8 is used. An example of such a material is copper.
In FIG. 1A, the wiring 8 is formed with the first thermocouple metal 3 and the second thermocouple metal 4 on the AlN film 2, but instead, the wiring 8 is formed with a wiring-dedicated material. To form.
The embodiment shown in FIG. 1 (c) uses the first thermocouple metal 3 and the second thermocouple metal 4 as the in-element wiring material, compared to the embodiment shown in FIG. 1 (a). The points are the same, but the wiring is performed in multiple layers.
Since the technique of multilayering wiring is a well-known technique in the field of semiconductor manufacturing technology, description thereof is omitted here.
The first combination of the thermocouple metal 3 and the second thermocouple metal 4 may be a combination of platinum and platinum / rhodium alloy, chromel and alumel, copper and constantan, or the like.
FIG. 2 shows a second embodiment of the present invention. In the second embodiment, vias (through holes) 22 that penetrate the front surface side and the back surface side of the silicon substrate 1 are formed, and the contact between the first thermoelectrode component metal 3 and the second thermocouple component metal 4 is achieved. The thermoelectromotive force measurement terminal produced by the part is taken out to the back side of the silicon substrate 1. Here, reference numeral 26 denotes an embedded metal embedded in the via 22 in order to take out a thermoelectromotive force generated between the first thermocouple metal 3 and the second thermocouple metal 4.

The manufacturing method of these element structures is based on lithography technology, which is a method commonly used in the semiconductor technical field.

In the following, the manufacturing method of the embodiment shown in FIG. 1A will be briefly described with reference to FIGS. An aluminum nitride film 2 is deposited on the silicon substrate 1 by 0.3 micrometers by reactive sputtering or the like. Next, for example, constantan 3 which is one of the thermocouple constituent metals is deposited to a thickness of 0.5 micrometers by sputtering. The constantan 3 is processed by a lithography method and a dry etching method to obtain a first thermocouple metal 3 having a wiring shape. After the formation of the first thermocouple metal 3 having a wiring shape made of constantan, a lift-off method is used to obtain another thermocouple constituent metal, for example, a second thermocouple metal wiring 4 having a wiring shape made of copper. That is, a photoresist 40 having a thickness of 1 micrometer is applied, and an opening 41 having the same plane dimensions as 4a (see FIG. 1A) is provided in the photoresist by lithography. Subsequently, as shown in FIG. 3B, a second thermocouple metal 4 made of copper, for example, is deposited on the entire surface to a thickness of 0.5 micrometers by vacuum deposition. Thereafter, if the photoresist is removed, the copper wiring 4a remains as shown in FIG. After the wiring made of the first thermocouple metal 3 and the wiring made of the second thermocouple metal 4 are formed, aluminum nitride 7a is deposited by 0.8 micrometers by sputtering or the like. A via 8 shown in FIG. 1D is opened in the aluminum nitride layer 7a by photolithography and dry etching. After opening the via 8, 2 micrometers of copper is deposited on the portion including the via, and the bump shape of the second thermocouple metal of FIG. 3 (e) 4b is formed by photolithography and dry etching. Form. After forming bump-shaped copper region 4b, titanium is sputter-deposited to a thickness of 0.1 micrometers, and bump-shaped copper 4b is covered with cap layer 5 made of Ti by photolithography and dry etching. Thereafter, aluminum nitride 7b is deposited by 1.0 micrometer to obtain FIG. Next, the aluminum nitride on the pump-shaped second thermocouple metal 4b having the structure of FIG. 3 (f) is cut by CMP to a thickness of 0.5 micrometers, and the thickness of 0.5 micrometers is further reduced. Etch back to remove only the aluminum nitride on the cap layer 5. Next, vias are provided in the aluminum nitrides 7a and 7b by photolithography and dry etching processes. Finally, as shown in FIG. 3 (i), the connection terminal 9 made of aluminum is taken out, and titanium of 0.1 μm is formed by sputtering, and a metal film 6 as a radiation countermeasure film is provided, and the completion is observed.

4 (a) to 4 (j) outline the method of manufacturing the temperature measuring element according to the second embodiment of the present invention shown in FIG. First, a clean Si substrate 1 subjected to the cleaning shown in FIG. Next, reactive sputtering is applied to the substrate by using Al as a target and introducing nitrogen into the atmosphere gas to form an AlN film with a thickness of 0.5 micrometers on the surface side of the silicon substrate. An underlayer 2 made of is formed. A back layer 21 made of AlN having a thickness of 0.5 micrometers is also formed on the back surface of the silicon substrate.

Next, a photoresist is applied on the back surface layer 21 made of AlN on the back surface side in FIG. 4B, and the pattern of the via (through hole) 22 is baked and developed. Thereafter, dry etching is performed using the resist formed in the pattern to open the via 22. After removing the photoresist, thermal oxidation is performed to form a thermal silicon oxide film 23 on the side surface of the via.
Next, the base layer 2 made of AlN on the surface side of the silicon substrate is patterned by a lithography process and a dry etching method to form a groove 24 having a depth of 0.3 micrometers (FIG. 4C).

In FIG. 4D, a thermocouple constituent metal, for example, platinum-10% rhodium is deposited on the underlayer 2 by sputtering using a thickness of 0.6 μm, and a chemical mechanical polishing CMP method is used to form the groove 24. Inside, platinum-10% rhodium is left as the first thermocouple metal 3.

In FIG. 4E, the underlayer 2 is patterned by a lithography process and a dry etching method to form a groove 25 having a depth of 0.3 micrometers.

FIG. 4F shows a structure in which another second thermocouple metal 4, for example, platinum, is deposited on the structure of FIG.

In FIG. 4G, the second thermocouple metal 4 is processed by a photolithography process and dry etching to form AlN having a thickness of 0.1 μm as a cap layer 5 on the entire wafer surface side.

Next, as shown in FIG. 4H, the entire surface of the wafer is etched back using the backside film 21 made of AlN on the backside of the silicon substrate as a mask, and the platinum-10% rhodium layer of the first thermocouple metal 3 and the second thermocouple. Opening is performed until a via (through hole) 22 reaches the bottom of each platinum layer of the counter metal 4.

After the opening of the via shown in FIG. 4 (h), tungsten is deposited to a thickness of 1 micrometer by the CVD method, and the buried metal 26 on the back surface side is removed by the CMP method, whereby tungsten in the via (through hole) 22 is formed. The structure shown in FIG.

Finally, as shown in FIG. 4 (j), the connection terminals 9a and 9b corresponding to the second thermocouple metal 4 made of platinum and the first thermocouple metal 3 made of platinum-10% rhodium are formed by photolithography and drying. It forms by the etching method, and the thermocouple element of the 2nd Example of this invention shown in FIG. 2 is obtained.

Here, the important point is that the base film 2, which is an electrically insulating film in a layer between the thermocouple metal (3, 4) and the substrate 1, has a thermal conductivity larger than that of the substrate 1. By adopting such a configuration, it is possible to reduce the temperature divergence between the holder part and the temperature measurement object due to the influence of the narrowing of the heat flow described in the first part of the embodiment for carrying out the invention. I can do it.

Specifically, when the substrate 1 is Si, the thermal conductivity of Si is large and is 168 Wm ⁻¹ K ⁻¹ . Therefore, as a material having a higher thermal conductivity, AlN (thermal conductivity; 200 Wm ⁻¹ K). ^-1 ). In addition, boron nitride BN, silicon carbide SiC, beryllium oxide BeO, and the like are also candidates as insulators having higher thermal conductivity than silicon. Ideally, there is diamond (thermal conductivity is about 1000 Wm ⁻¹ K ⁻¹ or more). An artificially produced CVD diamond also has the characteristics required by the present invention.

On the other hand, when glass is used as the substrate 1, the thermal conductivity of the Si oxide film, which is the main material of glass, is 1.4 Wm ⁻¹ K ⁻¹ . In addition to electrical insulators with high thermal conductivity, aluminum oxide (thermal conductivity: 21 Wm ⁻¹ K ⁻¹ ) is also a candidate.

The insulating film 7 located on the opposite side of the thermocouple metal substrate ideally has the above effect from the viewpoint of reducing the influence of the narrowing of the heat flow and the temperature divergence between the holder and the temperature measurement object. As explained, it is ideal to use a material having a high thermal conductivity such as AlN having a high thermal conductivity.

However, there is a substance having a large thermal conductivity such as the wiring 9 and the thermocouple metal (3, 4) between the base film 2 and the temperature measurement object, and it is considered that a considerable amount of heat moves through them. Therefore, it is not essential that the thermal conductivity of the insulating nucleus 7 is small.

Further, from the viewpoint of reducing the influence of the narrowing of the heat flow and the temperature divergence between the holder and the temperature measurement object, the material of the substrate 1 is also a major consideration. As described above, the Si substrate is a desirable substrate material because of its large thermal conductivity, and further the application of lithography technology, which is a Si processing technology established for semiconductor manufacturing.

Below, the temperature measuring apparatus using the temperature measuring element concerning this invention is demonstrated.

A temperature measuring apparatus using the temperature measuring element according to the present invention will be described. It should be noted here that the wiring connecting two different thermocouple metals and the corresponding external connection terminals may be made of a material different from that of the thermocouple metal, but at least the final end to the voltmeter is the corresponding thermocouple metal. It is necessary to have. Specifically, when the thermocouple metal is, for example, platinum and platinum / rhodium, these metals are expensive, and an inexpensive wiring material such as a copper wire is usually used up to the final terminal. In such a case, the metal at the end must be the corresponding thermocouple metal, ie platinum or platinum rhodium. This is because a thermoelectromotive force is generated between the wiring material placed in the middle, for example, copper and platinum or platinum / rhodium, and the thermoelectromotive force due to the Seebeck effect between platinum and platinum / rhodium cannot be measured. is there. However, if both ends of each wiring material part are connected to the same thermocouple metal and both connection parts are in an isothermal atmosphere, for example, at room temperature, both ends of the wiring material part and the thermocouple metal The thermoelectromotive force generated between the two is the same and is generated in the direction of cancellation. As a result, the thermoelectromotive force determined by the Seebeck effect of platinum-platinum / rhodium between the last ends can be measured.

For an element in which voltage can be taken out from the back surface of the substrate through a via as described in the second embodiment, a temperature measuring element is prepared at the temperature measuring position, and is brought into contact with the back surface or the surface of the temperature measuring object. The form to be used is conceivable.

As the temperature measuring device, the one shown in FIG. 5 can be considered. FIG. 5A is a cross-sectional view for explaining the temperature measuring device, and FIG. 5B is a plan view.

Here, 500 is a dicing of the temperature measuring element of the present invention, 510 is a plate material having a high thermal conductivity such as AlN, and 520 is an opening having a step formed in the plate material 510.

The temperature measuring element 500 diced larger than the size of the small opening having a step is dropped into the large opening and positioned for use.

The merit of this temperature measuring device is that it can be handled regardless of the size of the temperature measuring object and that a high-strength temperature measuring system can be configured by selecting a plate material.

  Next, another temperature measuring apparatus using the temperature measuring element according to the present invention will be described with reference to FIG.

In FIG. 6A, 600 l is a 12-inch silicon wafer, and nine temperature measuring elements 601 according to the present invention are formed on a 12-inch silicon wafer 6001. Here, the numbers in parentheses are the order in which the first number is counted from the bottom (hereinafter referred to as “number of rows”), and the next number is in the order counted from the left (hereinafter referred to as “number of columns”). ). Hereinafter, this set of numbers may be referred to as an address.

On 600 l on which the temperature measuring element 601 is fabricated, 600 s (shown by a dotted line) that is a temperature measuring object is placed.

In order to measure the temperature at each point of the temperature measurement object 600s, the output of each temperature measurement element must be taken out to the outside. 602X in FIG. 5 (a) is obtained by connecting the output terminals of the first thermocouple metal of each temperature measuring element by wiring and collecting them as one external connection terminal. Similarly, 602Y is obtained by connecting the output terminals of the second thermocouple metal by wiring and collecting them as one external connection terminal.

Reference numeral 603Y denotes a circuit for selecting one of the plurality of second thermocouple metal external output terminals. Reference numeral 603X denotes a circuit for selecting one of a plurality of first thermocouple metal external output terminals.

  FIG. 6 (b) schematically shows the electrical connection of FIG. 6 (a). A11 to A33 display external output terminals connected to the second thermocouple metal wiring 610 of the temperature measuring element corresponding to the thermal contact portion arrangement position (address) described in FIG.

Similarly, B11 to B33 display external output terminals connected to the first thermocouple metal wiring 611. The external output terminals A11 to A33 are 603Y switching circuits, and one of the external output terminals is selected and output to the final output terminal 604Y. Similarly, the external output terminals B11 to B33 are selected by the switching circuit 603X and one of the external measurement terminals is selected and output to the final output terminal 604X.

  The set of 602Y and 603Y and 602X and 603X can also be considered to constitute a so-called multiplexer and demultiplexer set.

Selection of the measurement point on the temperature measurement object is performed by selecting a temperature measurement element that reads the output. This selection is performed by the controller 620 sending a selection signal from the signal lines 612 and 613 to the switch 603 and operating the switch 603 so that the temperature measuring element to be measured is turned on. Then, the potential difference between the first thermocouple metal and the second thermocouple metal of the selected temperature measuring element is measured.

From the potential difference thus obtained, the temperature at the location where the temperature measuring element is located can be obtained. A temperature map in a certain range can be created by switching the temperature measuring element by the controller.

Next, a method for producing a product using the temperature measuring element of the present invention will be described.

FIG. 7 is an explanatory diagram of a substrate processing apparatus using the temperature measuring element of the present invention. 700 is a substrate processing apparatus, 701 is a vacuum container capable of evacuating the inside, 702 is an electrode, 703 is an electrical insulating material that electrically insulates the electrode 702 from the vacuum container 701, and 704 is an RF that applies RF power to the electrode 702. A power supply, 705 is a gas introduction means for introducing a process gas into the vacuum vessel 701, 706 is a substrate which is a temperature measurement object, 707 is a temperature measurement device comprising the temperature measurement element of the present invention, 708 is a substrate holder, and 709 is the main A hole for collectively taking out the wiring to be taken out from the temperature measuring element of the invention to the outside of the holder, 710 is a field through for taking out the wiring to the outside of the vacuum vessel 701, 711 is an exhaust port, 712 is a gate valve, and 713 Is a controller that controls the temperature measuring element of the present invention and receives an output signal. Here, a vacuum exhaust means such as a turbo molecular pump, a cryopump or a dry pump connected to the exhaust hole 711 is not drawn.

In order to use the substrate processing apparatus 600, the substrate 706 is placed on the temperature measuring device 707 of the present invention placed on the holder 708 by a transfer means (not shown). Next, the inside of the vacuum vessel 701 is exhausted to a predetermined pressure by a vacuum exhaust means (not shown).

Next, a desired process gas is introduced from the gas introduction means 705. Then, the RF power source 704 is operated to apply power to the electrode 702. Thereby, the process gas introduced from the gas introduction means 705 is turned into plasma, and ions, neutral active species, and the like are generated.

For example, in the case where the treatment is dry etching, the above-described ions, neutral active species, and the like act on a portion of the substrate 706 that is not covered with the mask, and etching proceeds selectively.

At this time, using the temperature measuring device 707 including the temperature measuring element of the present invention, the temperature of the part is determined from the output voltage of the temperature measuring element designated by the controller 713. If a temperature map is necessary for a predetermined surface, the controller 713 may scan the temperature measuring element.

By using the temperature measuring element of the present invention as described above, it is possible to know the temperature at the position to be measured at that time and at that time. As a result, as explained at the beginning, even in a resist process that is said to have an error of 1.5 nm with a temperature difference of 0.1 degree in a fine device manufacturing process with a design rule of several tens of nm. Data for processing with sufficient accuracy can be obtained.

In that way, the temperature at each point of the substrate for each process condition can be known. Then, using the data thus obtained, each process step can be easily optimized.

Although the etching process has been described above, the present invention can be applied to any process having accurate temperature measurement. Regarding products, the present invention can be applied to semiconductor devices such as DRAM and MRAM, electronic display devices such as liquid crystal displays, plasma displays and organic EL display devices, and electronic devices such as electronic components such as hard disks and hard disk heads.

In addition, the process is not limited to the etching process described above, but can be any process that requires knowing the temperature of the substrate at that time, such as a film forming process such as sputtering or CVD, a pre-processing process, or a post-processing process. Applicable.

Through the embodiments, an electrically insulating film having a high thermal conductivity is formed directly on the substrate, but it is not necessary to be limited to this form. For example, a metal film such as Ti may be once formed on the substrate, and an electrically insulating film having a high thermal conductivity may be formed thereon.

As mentioned above, although this invention has been demonstrated based on the Example, this invention is not restrained by such embodiment.

1: Substrate 2: Base film 3: First thermocouple metal 4: Second thermocouple metal 5: Cap layer 6: Metal film 7: Electrical insulating film 8: Wiring 9: Connection terminal 21: Back film 22: Via (through hole)
23: silicon oxide film 24, 25: groove 26: buried metal 100: temperature measuring element 500: diced temperature measuring element 510: plate material 520: opening with step 600: silicon wafer 601: temperature measuring element 602: thermocouple metal A set of external output terminals 603: a circuit for selecting one from a set of thermocouple metal external output terminals 604: a final output terminal 610: a second thermocouple metal wiring 611: a first thermocouple metal wiring 612, 613: a signal Line 620: Controller 700: Substrate processing apparatus 701: Vacuum container 702: Electrode 703: Electrical insulating material 704: RF power supply 705: Gas introduction means 706: Substrate 707: Temperature measuring device 708: Substrate holder 709: Hole 710: Field through 711: Exhaust port 712: Gate valve 713: Controller

Claims (9)

substrate,
A first film that is an electrical insulator having a greater thermal conductivity than the substrate, located on one surface of one side of the substrate;
A temperature measuring element comprising: a first thermocouple metal located on the opposite side of the substrate of the first film; and a second thermocouple metal having a portion in contact with the first thermocouple metal. The temperature measuring element according to claim 1, wherein the first thermocouple metal and the second thermocouple metal are patterned. The temperature measuring element according to claim 2, wherein the patterning is performed by a lithography technique. The first thermocouple metal and the second thermocouple metal each include an electrically insulating film having a thermal conductivity higher than that of the substrate on the opposite side of the first film. The temperature measuring element according to any one of the above. The temperature measuring element has a through hole penetrating the substrate, and the first thermocouple constituent metal and the second thermocouple metal are wired through a conductive material embedded in the through hole. The temperature measuring element according to any one of claims 1 to 4, wherein: The first temperature measuring element according to any one of claims 1 to 5 and the second temperature measuring element according to any one of claims 1 to 5, A temperature measuring device comprising switching means between one temperature measuring element and the second temperature measuring element. The temperature measuring device according to claim 6, wherein the one surface is a surface of the substrate itself. A substrate processing apparatus comprising the temperature measuring apparatus according to claim 6. A method for manufacturing an electronic device, comprising a step of using temperature data obtained by using the temperature measuring device according to claim 6.