JP2011061135A - Substrate processing apparatus - Google Patents

Abstract

A substrate processing apparatus having a substrate transfer function capable of correcting a wafer position shift in a FOUP input to a semiconductor manufacturing apparatus by simply modifying the transfer system without providing an expensive apparatus mechanism. A processing chamber for processing a substrate, a vacuum transfer chamber having first transfer means for transferring the substrate from a preliminary chamber to the processing chamber, and a second transfer for transferring a substrate from a carrier to the preliminary chamber. A substrate processing apparatus comprising an atmospheric transfer chamber provided with a means, and a control means for controlling the first transfer means and the second transfer means, wherein the control means removes the substrate in the carrier. When taking out, after positioning the substrate, the second transport means is controlled so as to take out the substrate.
[Selection] Figure 8

Description

The present invention relates to a function of correcting a position of a substrate that is displaced when a substrate is taken out of a carrier by a semiconductor manufacturing apparatus.

FOUP ((Front Opening Unified Pod) as a carrier for accommodating a substrate is OHT (Overhead Hoist Transfer) or AGV (Automatic Guided Vehicles), which is various external transfer devices, or a person is loaded on the load port LP (Load Port). At that time, the position of the wafer as a substrate may not be aligned due to differences in the FOUP manufacturers used at the equipment delivery destination or vibration of the transfer, or the reaction may occur when the FOUP lid is opened. If the wafer is transferred into the apparatus in this state, a transfer deviation occurs, which causes a difference due to rubbing the wafer or a stop due to a transfer mistake.

Therefore, conventionally, a wafer position shift is detected by an aligner or the like, and the amount of shift when the wafer is taken out from the aligner is corrected by a robot, or the wafer position is forcibly corrected by a grip arm robot. The method has been taken. However, the method as described above requires an aligner, a grip arm, and the like, resulting in an increase in the cost of the apparatus.

In the present invention, there is provided a substrate processing apparatus having a substrate transfer function capable of correcting a wafer position shift in a FOUP input to the apparatus by simply modifying the transfer method without providing an expensive apparatus mechanism. The purpose is to do.

The first feature of the present invention is that a processing chamber for processing a substrate, a vacuum transfer chamber having a first transfer means for transferring the substrate from the preliminary chamber to the processing chamber, and a substrate from the carrier to the preliminary chamber. A substrate processing apparatus comprising an atmospheric transfer chamber having a second transfer means for transferring, and a control means for controlling the first transfer means and the second transfer means, wherein the control means includes When the substrate in the carrier is taken out, the second conveying means is controlled to take out the substrate after positioning the substrate.

According to a second aspect of the present invention, the second transport unit includes a substrate holding mechanism provided with at least a holding unit for holding the substrate and a positioning unit used for positioning the substrate, and the control unit When the substrate in the carrier is taken out, the positioning portion is brought into contact with a side portion of the substrate to correct the position of the substrate, and after placing the substrate on the holding portion, The second conveying means is controlled to take out.

When a FOUP is received from a customer facility at a semiconductor manufacturing equipment and the FOUP door is opened, the wafer is often misaligned, and mechanical correction functions such as an aligner and edge grip are retained. This guarantees the transfer of wafers within the system. However, it is expensive to equip these mechanisms. On the other hand, according to the present invention, the wafer position is assured by devising the transfer sequence rather than providing a special mechanism such as an aligner or edge grip. Thereby, the particle problem by the stop and contact by the wafer shift in the apparatus can be avoided.

It is a plane sectional view showing a semiconductor manufacturing device which is one embodiment of the present invention. It is a longitudinal cross-sectional view which shows the semiconductor manufacturing apparatus which is one Embodiment of this invention. It is a perspective view which shows the process chamber in the semiconductor manufacturing apparatus which is one Embodiment of this invention. It is a figure which shows the structure of the wafer transfer apparatus in one Embodiment of this invention. It is each typical top view and each longitudinal cross-sectional view which show the wafer transfer flow in a processing chamber. It is each typical top view and each longitudinal cross-sectional view which show the continuation of the wafer transfer flow in a process chamber. It is a figure which shows the controller structure in the semiconductor manufacturing apparatus which is one Embodiment of this invention. It is a figure which illustrates the conveyance sequence in one Embodiment of this invention. It is the figure which showed typically the conveyance process in one Embodiment of this invention. It is a figure for demonstrating the position correction in one Embodiment of this invention. It is an example of FOUP used for one Embodiment of this invention. It is the figure which showed typically the conveyance process in other embodiment of this invention. It is the figure which showed typically the conveyance process in other embodiment of this invention.

In the present embodiment, the substrate processing apparatus according to the present invention is configured as a semiconductor manufacturing apparatus 10. As shown in FIG. 1, the semiconductor manufacturing apparatus 10 includes two load lock chambers LC1 and LC2 centered on a vacuum transfer chamber 12 (hereinafter also referred to as a first transfer chamber) as a transfer chamber TC. Two processing chambers 16a and 16b are arranged as load lock chambers (preliminary chambers) 14a and 14b and process chambers PC1 and PC2. Each process chamber includes two processing units. An EFEM (Equipment Front End Module) 18 that is a second transfer chamber is disposed upstream of the two load lock chambers 14a and 14b. Further, the EFEM may be hereinafter referred to as an atmospheric transfer chamber.

The EFEM 18 is provided with a load port 20 for mounting a FOUP which is a carrier storing a wafer 1 as a substrate. In FIG. 1, FOUPs are mounted on the load ports 20 (LP1, LP2, LP3), respectively. A FOUP serving as a carrier is formed with slots as 25-stage substrate holding portions, and the exceptional slots are configured to hold wafers one by one. Therefore, the FOUP can accommodate a minimum of 1 to a maximum of 25 wafers 1. A wafer transfer device 40 as a second transfer device is installed in the EFEM 18, and the wafer transfer device 40 can transfer a plurality (usually, 5) of wafers simultaneously in the atmosphere. The wafer transfer device 40 enables wafer transfer between the two load lock chambers 14a and 14b. Here, the wafer transfer device 40 may be hereinafter referred to as an atmospheric robot. Although not clearly shown in FIG. 1, the wafer transfer device 40 has two arms. One arm is provided with a blade for transferring five sheets at a time, and the other arm is provided with a blade for transferring one sheet.

FIG. 4 shows an example of a structure attached to a wafer transfer device (atmospheric robot) 40 having two arms. Since five blades are attached to one arm (arm 1), five wafers 1 can be collectively transferred. One blade is attached to the other arm (arm 2), and the wafer 1 can be conveyed by a single wafer. Both arms (arm 1 and arm 2) are equipped with rod-shaped members for pushing the protruding wafer 1 into the back of the carrier when taking out the wafer 1 called a tidy bar from the carrier. . Hereinafter, this rod-shaped object may be referred to as a positioning part. The material of this positioning part is a PEEK material (PolyEtherEtherKetone) or the like. In addition, since the positioning portion is brought into contact with the flying wafer 1, there is a concern about particles, which can be solved by adjusting the speed when pushing in and downflow in EFEM. Here, in the present embodiment, a structure in which two arms are provided and five sheets can be separated from one is shown. However, various structures limited to this embodiment are possible as long as they do not contradict the gist of the present invention. Needless to say. The material of the positioning part may be Al (aluminum).

As shown in FIG. 2, the load lock chambers 14a and 14b are provided with a support base 20, and the support base 20 accommodates 25 wafers at regular intervals in the vertical direction. The support base 20 is made of, for example, silicon carbide or aluminum, and includes, for example, three support columns 26 that connect the upper plate 22 and the lower plate 24. For example, 25 placement portions 28 are formed in parallel in the longitudinal direction of the column 26. The support 20 is configured to move in the vertical direction (moves in the vertical direction) in the load lock chambers 14a and 14b, and is configured to rotate about a rotation axis extending in the vertical direction. . Further, as long as both arms of the first transfer chamber and the second transfer chamber can be accessed and a wafer can be delivered, a configuration without a rotating shaft may be used.

A wafer transfer device 30 as a first transfer device is installed in the transfer chamber 12. Hereinafter, it may be called a vacuum robot. The wafer transfer device 30 transfers the wafer 1 between the load lock chambers 14a and 14b and the processing chambers 16a and 16b. The wafer transfer device 30 includes an arm 34 provided with a finger assembly 32. The finger assembly 32 has an upper finger 32a and a lower finger 32b. The upper finger 32a and the lower finger 32b have the same shape, are spaced apart at a predetermined interval in the vertical direction, and extend substantially horizontally from the arm 34 in the same direction to support the wafer 1 respectively. The arm 34 is configured to rotate about a rotation axis extending in the vertical direction and to move in the horizontal direction. The transfer chamber 12 and the processing chamber 16a communicate with each other via the gate valve 35 (see FIG. 3). Although only one finger assembly 32 is shown in FIG. 2, it is needless to say that the present invention is not limited to this form. For example, two arms 34 may be provided. Then, each processing chamber 16 is provided with two processing units, but the processed wafer 1 and the unprocessed wafer 1 in each processing unit can be exchanged at a time. Hereinafter, the finger assembly 32 may be referred to as a blade 32.

As described above, the wafer transfer apparatus 30 installed in the transfer chamber 12 transfers unprocessed wafers stocked in the load lock chambers 14a and 14b to the process chambers 16a and 16b through the gate valve 35 two by two at the same time. In addition, two processed wafers can be transferred from the processing chambers 16a and 16b to the load lock chambers 14a and 14b two at a time.

As shown in FIG. 3, two holding bases 37 are installed in the processing unit 16. The holding table 37 on the transfer chamber 12 side is referred to as a first processing unit 36, and the other holding table 37 is referred to as a second processing unit 38. The first processing unit 36 and the second processing unit 38 have independent structures and are aligned in the same direction as the wafer processing flow direction when viewed from the whole apparatus. That is, the second processing unit 38 is disposed far from the transfer chamber 12 with the first processing unit 36 interposed therebetween. The first processing unit 36 and the second processing unit 38 communicate with each other, and the temperature inside the processing chamber 16 can be increased to 300 ° C. The 1st process part 36 and the 2nd process part 38 are formed, for example with aluminum, and are heated by the heater (not shown) inserted. In order to achieve the purpose of saving space and low cost, the load lock chambers 14a and 14b, the transfer chamber 12 and the processing chambers 16a and 16b may be formed of, for example, one aluminum part.

Near the inner side between the first processing unit 36 and the second processing unit 38 in the processing chamber 16, a wafer transfer device (hereinafter also referred to as an inner transfer device) 50 in the processing chamber as a third transfer device is provided. It has been. The inner transfer device 50 transfers one of the two unprocessed wafers conveyed by the wafer transfer device (hereinafter also referred to as the outer transfer device) 30 to the second processing unit 38, and further The processed wafer of the second processing unit 38 is transferred onto the finger assembly 32 of the outer transfer device 30. The inner transfer device 50 performs a rotation operation and a lifting operation in accordance with a rotation operation and a lifting operation of a shaft portion that is a rotation shaft, and therefore, of the two wafers transferred to the processing chamber 16 by the outer transfer device 30. One wafer can be transferred from the upper side of the first processing unit 36 to the second processing unit 38 far from the transfer chamber 12 and placed thereon. The inner transfer device 50 becomes high temperature (about 200 ° C.) due to heat radiation from the first processing unit 36 and the second processing unit 38, and thus has plasma resistance and high heat resistance, such as alumina ceramics, quartz, It is preferably formed from SiC (silicon carbide), AlN (aluminum nitride) or the like. By forming, for example, alumina ceramics having a smaller thermal expansion coefficient than that of metal parts, it is possible to prevent deterioration in conveyance reliability due to deflection due to thermal deformation. However, metal parts are used at the base of the inner transfer device 50 for position and level (height) adjustment.

5 and 6 show an outline of the wafer transfer flow in the processing chamber 16. 5 (a) to 5 (d) and FIGS. 6 (e) to (h), the upper diagram is a top view of the processing chamber 16, and the lower diagram is a diagram depicting the cross section of the upper diagram, and is an explanatory drawing. . In the figure below, one of the holding pins 39a is provided at a location near the gate valve 35 in the first processing section 36. This is for convenience of explanation. Actually, as shown in the upper diagram, the holding pin 39a is provided at a location near the gate valve 35 in the first processing unit 36, that is, at a location where the outer transfer device 30 waits as shown in the upper diagram of FIG. Is not provided.

In the following description, the operation of each part constituting the semiconductor manufacturing apparatus 10 is controlled by a controller system 700 described later. First, the inside of the processing chamber 16 is decompressed to the same pressure as the transfer chamber 12.

(Step 1 FIG. 5A)
The gate valve 35 is opened, and the first holding pin 39a of the first processing unit 36 and the second holding pin 39b of the second processing unit 38 are raised. The inner transfer device 40 stands by on the second processing unit 38 side and ascends together with the first holding pin 39a and the second holding pin 39b.

(Step 2 FIG. 5B)
The inner transfer device 40 moves substantially horizontally to the first processing unit 36 side as the shaft portion 43e rotates. At this time, the notch 43 b of the inner transfer device 40 faces the gate valve 35.

(Step 3 FIG. 5 (c))
The outer transfer device 30 moves from the transfer chamber 12 to the processing chamber 16 via the gate valve 35 while simultaneously transferring the two wafers 1 placed on the upper finger 32a and the lower finger 32b, and the first processing section. Stop above 36. At that time, the inner transfer device 40 stands by at a height position between the upper finger 32a and the lower finger 32b of the finger assembly 32.

(Step 4 FIG. 5D)
In a state where the outer transfer device 30 does not operate as it is, the first holding pins 39a of the first processing unit 36 are raised, and the wafer 1 placed on the lower finger 32b is placed on the first holding pins 39a. Further, as the inner transfer device 40 moves up, the wafer placed on the upper finger 32 a is placed on the claw portion 43 c of the inner transfer device 40.

(Step 5 FIG. 6 (e))
The outer transfer device 30 returns into the transfer chamber 12.

(Step 6 (f) in FIG. 6)
The inner transfer device 40 moves substantially horizontally to the second processing unit 38 side when the shaft 43e rotates while the wafer 1 is mounted. At the same time, the gate valve 35 is closed.

(Step 6 Fig. 6 (g))
The shaft portion 43e is lowered, and the inner transfer device 40 moves downward in the outer periphery of the second processing unit 38. Since the inner transfer device 40 stands by in the processing chamber 16 even during wafer processing, the flow of processing gas (for example, O 2 radical) supplied from above the second processing unit 38 is hindered, and the wafer is transferred. There is a risk of in-plane uniformity being deteriorated. Therefore, it moves to a height that does not hinder the gas flow on the outer periphery of the second processing unit 38.

(Step 6 (h) in FIG. 6)
The first holding pins 39 a of the first processing unit 36 and the second holding pins 39 b of the second processing unit 38 are lowered substantially simultaneously while holding the wafer 1 substantially horizontally, and the wafer 1 is placed on the holding table 37. That is, the wafers 1 are lowered so that the distances between the respective wafers 1 and the holders corresponding to the wafers 1 are equal to each other. This is to make the thermal effects on the wafer 1 of the first processing unit 36 and the second processing unit 38 the same.

  Thereafter, gas is supplied into the processing chamber 16 to generate plasma (ashing processing). After the substrate processing, the reverse sequence is executed to carry out the processed wafer 1.

FIG. 7 is a diagram showing a controller configuration in the present invention. A controller system 700 as an apparatus controller in the present invention includes an operation unit (OU) 701, an overall control controller 702 as a main controller, an atmospheric robot controller 704 as a second transfer apparatus, and a first transfer apparatus. A vacuum robot controller 705 for controlling the outer transfer device (vacuum robot) 30 is connected via a LAN. Although not shown, a processing chamber robot controller for controlling the inner transfer device 50 (processing chamber robot) is also connected via the LAN.

The operation unit 701 includes a display unit (not shown) that displays a screen for performing monitor display, analysis of logging data and alarms, parameter editing, and the like, instruction data input via the display unit, various recipes, The configuration includes a storage unit (not shown) for storing parameters as a file, an input unit (not shown) for inputting commands such as system control commands, and setting values when creating various recipes. The overall control controller 702 as a main controller controls the operation of the entire controller system 700. Also, transport system control and vacuum exhaust system control for the vacuum robot controller 705 and the atmospheric robot controller 704. Process control (temperature, gas, pressure, RF, etc.) as each process chamber PC is performed. In addition, it captures signals from various sensors that detect the wafer 1 via a sensor bus, which is a communication line directly under the overall controller 702, and is linked to each robot (vacuum robot or atmospheric robot) while checking the wafer information. Carry out transport control. The sub-controller 703 outputs numerical data to the MFC, APC (auto pressure controller), RF transmitter, temperature controller (temperature controller), etc. in response to the command (instruction) of the overall controller 702, or vice versa. The numerical value is received and transmitted to the overall control controller 702. The sub-controller 703 performs processing that requires high control performance, such as applying valve interlock to the commanded (instructed) valve pattern, detecting hard interlock, and performing appropriate processing. . The display unit, the storage unit, and the input unit may be separate from the operation unit 701 or may be separate from the main controller 701.

Further, it is connected to a GEM controller (not shown) and a host computer on the user (customer) side (not shown) via the GEM controller to realize an automated system in the factory.

Next, a control method for operating the arm 34 of the atmospheric robot 40 will be described with reference to FIG. In FIG. 8, a description will be given of an operation in which the atmospheric robot 40 collectively takes out five wafers 1 from the FOUP (Get process).

  First, the blade 32 of the arm 34 is made to enter between the slots where the wafer 1 is placed with respect to the corresponding FOUP, and is moved to FP (Front Position). Until the FP, the blade 32 is unloaded and moved at high speed. Next, it moves at low speed to PP (Push Position). This is because the positioning portion for correcting the position of the wafer 1 is in contact with the side portion of the wafer 1 and further pushed to the back side of the FOUP. Then, the blade 32 is moved to a position SP (Set Position) where the wafer 1 is picked up at a high speed. In order to scoop up the wafer 1, the amount of scooping of the lift shaft of the blade 32 is increased. When the scooping operation is completed, the telescopic shaft of the blade 32 is moved to the HOME position. The speed of the raising / lowering axis and the telescopic axis of the blade 32 is executed with reference to the parameter table. Therefore, the speed can be arbitrarily changed by changing the parameters.

In this embodiment, as compared with the conventional operation of taking out the wafer 1 with respect to the FOUP, the blade 32 is advanced to the pushing position PP, and the positioning portion provided on the arm 34 is brought into contact with and pushed into the side portion of the wafer 1. As a result, the position of the pop-out wafer 1 can be corrected, and scooping can be performed in the same manner as a normal wafer 1.

FIG. 9 is a schematic diagram when the conveyance sequence illustrated in FIG. 8 is actually operated. In FIG. 9 (a), the blade 32 enters the FOUP at a high speed and stops at the FP. In FIG. 9 (b), the blade 32 further enters the FOUP at a low speed, and the flying wafer 1 is pushed in and pushed in. Stop at position PP. At this time, it is desirable that the other normal wafer and the positioning portion are in contact with each other. This is because there is no need to push the normal wafer 1 further into the FOUP. In FIG. 9C, the blade 32 is returned to the scooping position SP (retracted to the outside of the FOUP). 9D, the wafer 1 is lifted up. Finally, in FIG. 9E, the blade 32 is retracted from the FOUP to complete the wafer 1 take-out operation.

Next, FIG. 10 illustrates a mechanism for correcting the position of the jump-out wafer 1 in the present embodiment.

As shown in FIG. 10, the FOUP configuration includes a substrate support 801 as a wafer support for supporting the wafer 1 and a substrate stopper 802 as a wafer stopper that stops the wafer 1 from colliding with the back side of the FOUP. It has been. The substrate transport system in the present embodiment effectively uses this FOUP configuration. That is, when the wafer 1 placed on the substrate stopper 802 is pushed by an ordering stick (ie, a positioning portion) and the position of the wafer 1 is changed, the wafer 1 slides on the substrate stopper 802. Become. Here, the wafer 1 is created to stop at a predetermined position. Note that FIG. 10 is a drawing when the blade 32 is advanced into the FOUP before FIG. 9A. Each example of this FOUP is shown in FIG.

Another embodiment is shown in FIGS. That is, the transfer process is schematically shown in the case where the positional deviation occurs not only on the front side of the FOUP (wafer jumping out) but also on the back side of the wafer. Although FIG. 12F and FIG. 13G are separate diagrams for convenience, it goes without saying that they are continuous in the transport process.

At the start of the transport operation in the present embodiment, it is confirmed from FIG. 12A that the respective home positions (initial positions) are obtained. First, the blade 32 attached to the arm 34 is moved into each slot where the wafer 1 is placed with respect to the corresponding FOUP, and the surface of the positioning portion is moved to the position of FP (Front Position) (FIG. 12 ( b)). Until the FP, the blade 32 is moved at a high speed because there is no load, and then the surface of the positioning portion is moved at a low speed to the substrate placement position SP (Set Position) (FIG. 12C). Then, the wafer 1 is scooped up at the position of the substrate placement position SP (FIG. 12D). The blade 32 is moved to a standby position WP (Wait Position) (FIG. 12E). When the wafer 1 is lowered, the wafer 1 that has shifted to the back of the FOUP is moved to the front of the FOUP (on the lid side) (FIG. 12F). By pushing again to the substrate placement position SP at a low speed again, the other wafer positions are aligned with the wafer 1 that has jumped out to the back side (FIG. 13G). Thereafter, the substrate take-out position GP (Get
The blade 32 is moved to Posiotn (FIG. 13 (h)), and the wafer 1 is scooped up (FIG. 13 (i)). With these operations, the position of the wafer that has jumped out to the far side and the near side of the FOUP can be corrected, and the wafer can be placed at the center of the blade 32. The speed of the raising / lowering axis and the telescopic axis of the blade 32 is executed with reference to the parameter table. Therefore, the speed can be arbitrarily changed by changing the parameters.

In this embodiment, there is a concern about particles caused by contacting the wafer 1 by the positioning unit. However, as a result of carrying processing without using this carrying method, the wafer 1 is displaced by the vacuum robot 30 and the edge of the blade 32 is Naturally, dust (particles) does not come out rather than getting on or hitting a boat pillar in the load lock chamber LC. In addition, since it is on the atmosphere side, the down flow in the EFEM is good, so it is also possible to fly trash. Therefore, compared to the risk of causing a transport error without using this transport method, it does not pose any problem if the positioning unit is abutted at a low speed and rubbed with the substrate support unit 801 of the FOUP to some extent. In particular, an ashing apparatus, which is a kind of semiconductor manufacturing apparatus according to the present invention, is required to have a high throughput with a throughput of several hundreds / h. Therefore, if a transport error occurs, the apparatus operating rate is significantly reduced.

In the implementation of the present invention, for each lot consisting of a plurality of substrates, a transfer method that does not use the wafer position correction function, a transfer method that has a wafer jump correction function, and a wafer jump correction function that does not cause a position shift to the back of the wafer. You may enable it to select the conveyance system which has a correction function. Furthermore, the above-described transport method may be set for each FOUP.

<Preferred embodiment of the present invention>
Hereinafter, preferred embodiments of the present invention will be additionally described.

  According to a first aspect of the present invention, there is provided a processing chamber for processing a substrate, a vacuum transfer chamber having a first transfer means for transferring the substrate from a preliminary chamber to the processing chamber, and a substrate from a carrier to the preliminary chamber. A substrate processing apparatus comprising an atmospheric transfer chamber having a second transfer means for transferring, and a control means for controlling the first transfer means and the second transfer means, wherein the control means includes A substrate processing apparatus and a substrate transport method for a substrate processing apparatus for controlling the second transport means so as to take out the substrate after positioning the substrate when taking out the substrate in a carrier.

  According to a second aspect of the present invention, the second transport unit includes a substrate holding mechanism provided with at least a holding unit for holding the substrate and a positioning unit used for positioning the substrate, and the control unit When the substrate in the carrier is taken out, the positioning portion is brought into contact with a side portion of the substrate to correct the position of the substrate, and after placing the substrate on the holding portion, The substrate processing apparatus and the substrate transport method of the substrate processing apparatus according to the first aspect of controlling the second transport unit so as to be taken out.

  According to a third aspect of the present invention, there is provided first or second control means for supplying a processing gas into the processing chamber into which a substrate is carried and generating a plasma in the processing chamber to process the surface of the substrate. A method for manufacturing a semiconductor device, which is performed by the substrate processing apparatus according to the above aspect.

According to a fourth aspect of the present invention, there is provided a processing chamber for processing a substrate, a vacuum transfer chamber having a first transfer means for transferring the substrate from the preliminary chamber to the processing chamber, and a substrate from the carrier to the preliminary chamber. A substrate processing apparatus comprising an atmospheric transfer chamber provided with a second transfer means for transferring, and a control means for controlling the first transfer means and the second transfer means,
The second transport unit has a substrate holding mechanism provided with at least a holding unit for holding the substrate and a positioning unit used for positioning the substrate,
When taking out the substrate, the control means retracts the substrate held by the holding portion to the predetermined position, and contacts the positioning portion with a side portion of the substrate that has been returned to the predetermined position. A substrate processing apparatus that controls the second transport unit so as to take out the substrate after correcting the position of the substrate and placing the substrate on the holding unit.

10
Semiconductor manufacturing equipment (ashing equipment)
700 Controller system (device controller)

Claims (2)

A processing chamber for processing the substrate; a vacuum transfer chamber having a first transfer means for transferring the substrate from the preliminary chamber to the processing chamber; and a second transfer means for transferring the substrate from the carrier to the preliminary chamber. A substrate processing apparatus comprising: an atmospheric transfer chamber; and a control means for controlling the first transfer means and the second transfer means,
The substrate processing apparatus is characterized in that the control means controls the second transport means so as to take out the substrate after positioning the substrate when taking out the substrate in the carrier. The second transport unit has a substrate holding mechanism provided with at least a holding unit for holding the substrate and a positioning unit used for positioning the substrate,
The control means corrects the position of the substrate by bringing the positioning portion into contact with the side portion of the substrate when taking out the substrate in the carrier, and placing the substrate on the holding portion. The substrate processing apparatus, wherein the second transport unit is controlled to take out the substrate.