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JP2011061109A - Method of manufacturing solar cell element, and the solar cell element - Google Patents

Method of manufacturing solar cell element, and the solar cell element Download PDF

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JP2011061109A
JP2011061109A JP2009211285A JP2009211285A JP2011061109A JP 2011061109 A JP2011061109 A JP 2011061109A JP 2009211285 A JP2009211285 A JP 2009211285A JP 2009211285 A JP2009211285 A JP 2009211285A JP 2011061109 A JP2011061109 A JP 2011061109A
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electrode
layer
screen printing
substrate
solar cell
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Rei Mita
怜 三田
Toyotaka Uekuri
豊敬 植栗
Takenori Watabe
武紀 渡部
Naoki Ishikawa
直揮 石川
Hiroyuki Otsuka
寛之 大塚
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Shin Etsu Chemical Co Ltd
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Abstract

【課題】凹凸が小さく滑らかな半円形状で抵抗の低い集電極を備えた曲線因子の高い太陽電池素子を提供する。
【解決手段】半導体基板10上にスクリーン印刷法により導電性ペースト8を複数回重ねて印刷して多層電極を形成するに際し、スクリーン印刷製版7を用いて一層目の電極を印刷した後、上記基板又はスクリーン印刷製版の位置を一層目の電極印刷時の基板又はスクリーン印刷製版位置より一層目の電極の長手方向に沿ってずらした状態で上記一層目の電極の直上にこれと重ねて二層目の電極を印刷し、更に必要により、三層目以降の電極を上記と同じ方向に順次ずらして印刷して多層電極を形成する。
【選択図】図2
Provided is a solar cell element having a high fill factor provided with a smooth semicircular shape with small irregularities and a low resistance collector.
When a multi-layer electrode is formed by printing a conductive paste on a semiconductor substrate by a plurality of screen printing methods, a first electrode is printed using a screen printing plate making plate, and then the substrate is printed. Alternatively, the second layer is superimposed on the first layer electrode in a state where the position of the screen printing plate making is shifted along the longitudinal direction of the first layer electrode from the substrate or screen printing plate making position when the first layer electrode is printed. The third and subsequent electrodes are sequentially shifted in the same direction as described above to form a multilayer electrode.
[Selection] Figure 2

Description

本発明は、太陽電池素子の製造方法及びこれにより得られる太陽電池素子に関する。   The present invention relates to a method for manufacturing a solar cell element and a solar cell element obtained thereby.

一般に、太陽電池素子は、図1に示す構造を有する。図1において、1は、大きさが100〜150mm角、厚みが0.1〜0.3mmの板状で、かつ、多結晶や単結晶シリコン等からなり、ボロン等のp型不純物がドープされたp型の半導体基板である。この基板1に、リン等のn型不純物をドープしてN層2を形成し、SiNなどの反射防止膜3をつけ、スクリーン印刷法を用いて、裏面に形成したBSF(Back Surface Field)層4上に導電性アルミニウムペーストを印刷した後、乾燥・焼成して裏面電極5を形成し、表面に導電性銀ペーストを印刷後、乾燥して焼成し、集電極6を形成することで製造される。なお、以下、太陽電池素子の受光面側となる基板の面を表面、受光面側と反対側になる基板の面を裏面とする。   In general, a solar cell element has a structure shown in FIG. In FIG. 1, 1 is a plate shape having a size of 100 to 150 mm square and a thickness of 0.1 to 0.3 mm, and is made of polycrystal, single crystal silicon or the like, and doped with p-type impurities such as boron. It is a p-type semiconductor substrate. The substrate 1 is doped with an n-type impurity such as phosphorus to form an N layer 2, an antireflection film 3 such as SiN is attached, and a BSF (Back Surface Field) layer formed on the back surface using a screen printing method. After the conductive aluminum paste is printed on 4, it is dried and fired to form the back electrode 5, and after the conductive silver paste is printed on the surface, dried and fired to form the collector electrode 6. The Hereinafter, the surface of the substrate that is the light receiving surface side of the solar cell element is referred to as the front surface, and the surface of the substrate that is opposite to the light receiving surface side is referred to as the back surface.

図2は、上述の太陽電池素子の製造方法で利用される導電性ペーストのスクリーン印刷工程を示す模式図である。製版7は集電極のパターン状に乳剤が抜かれており、その上に充填された導電性ペースト8を、印圧がかけられたスキージ9を移動させて基板10上に転写することで集電極(表面電極)を形成する。   FIG. 2 is a schematic view showing a screen printing process of a conductive paste used in the method for manufacturing a solar cell element described above. In the plate making 7, the emulsion is extracted in the pattern of the collector electrode, and the conductive paste 8 filled thereon is transferred onto the substrate 10 by moving the squeegee 9 to which the printing pressure is applied, thereby transferring the collector electrode ( Surface electrode) is formed.

このようにして形成された集電極を図3に示す。(I)は斜視図であり、(II)は(I)の一点鎖線で示す面に沿って切断した断面図である。また、図3中、10は基板、11は集電極であり、Dは集電極の長手方向を示す。上記のスクリーン印刷法では、図3(II)に示すように、1回の印刷で形成される集電極11の高さはメッシュの影響を受けて凹凸が発生し、不均一になる。このため、集電極の抵抗が高くなり、変換効率向上の妨げになっている。   The collector electrode formed in this way is shown in FIG. (I) is a perspective view, and (II) is a cross-sectional view cut along a plane indicated by a dashed line in (I). Moreover, in FIG. 3, 10 is a board | substrate, 11 is a collector electrode, D shows the longitudinal direction of a collector electrode. In the above-described screen printing method, as shown in FIG. 3 (II), the height of the collecting electrode 11 formed by one printing is uneven due to the influence of the mesh. For this reason, the resistance of the collector electrode is increased, which hinders improvement in conversion efficiency.

集電極の抵抗を低く抑えるため、導電性ペーストの印刷を複数回重ねて行い、集電極のアスペクト比を高める手法が提案されている。しかし、印刷回数を増やすことで電極間のズレによるペーストのダレが生じる可能性が高まり、これはシャドーロスの増大による変換効率の低下につながるため問題である。この問題を回避するためには、使用する導電性ペーストの粘度を高くして、ペーストのダレによるシャドーロス増大を小さくするという手法が存在する。しかし、導電性ペーストの粘度を高くすると、複数回印刷を行っても前述の製版のメッシュによる集電極の凹凸の影響が強く残ってしまい、集電極の厚みのばらつきが大きくなるという問題が存在する。   In order to keep the resistance of the collector electrode low, a method has been proposed in which the conductive paste is printed a plurality of times to increase the aspect ratio of the collector electrode. However, increasing the number of printings increases the possibility of paste sagging due to misalignment between electrodes, which is a problem because it leads to a decrease in conversion efficiency due to an increase in shadow loss. In order to avoid this problem, there is a method of increasing the viscosity of the conductive paste to be used and reducing the increase in shadow loss due to paste sagging. However, when the viscosity of the conductive paste is increased, there is a problem that the unevenness of the collector electrode due to the above-described plate making mesh remains strongly even after printing a plurality of times, and the thickness of the collector electrode varies greatly. .

この問題を回避するために、例えば、特許文献1(特開2007−243230号公報)には、導電性ペーストを複数回重ねて印刷することで、凹凸を低減させて平坦化した集電極を形成し、特性を向上させる方法が開示されている。   In order to avoid this problem, for example, Patent Document 1 (Japanese Patent Application Laid-Open No. 2007-243230) forms a collector electrode that is flattened by reducing unevenness by printing a conductive paste a plurality of times. A method for improving the characteristics is disclosed.

特許文献1の方法においては、導電性ペーストを複数回重ねて印刷する際に、異なるメッシュの製版を用いて重ねると、大きく特性が向上すると報告されている。しかし、異なるメッシュの製版同士は、印圧を加えられた際の伸び方が異なるため、多層電極を形成するにつれて集電極間のズレが発生しやすくなる。これはシャドーロスにつながるため、特性低下の原因になる。   In the method of Patent Document 1, it is reported that the characteristics are greatly improved when the conductive paste is printed by overlapping a plurality of times by using different mesh plates. However, plate making with different meshes has different ways of stretching when a printing pressure is applied, and therefore, a gap between collecting electrodes tends to occur as a multilayer electrode is formed. This leads to a shadow loss, which causes deterioration of characteristics.

また特許文献1の方法においては、導電性ペーストを複数回重ねて印刷する際に、同じメッシュの製版を用いて重ねても特性が向上すると報告されている。しかし、異なるメッシュを使用したときより特性の向上幅が小さくなってしまうという不具合があった。   Further, in the method of Patent Document 1, it is reported that the characteristics are improved even when the conductive paste is printed by overlapping a plurality of times, even if the same mesh plate making is used. However, there is a problem that the improvement width of the characteristics becomes smaller than when a different mesh is used.

特開2007−243230号公報JP 2007-243230 A

本発明は、上記事情に鑑みなされたもので、表面の凹凸が低減され、抵抗が低く、アスペクト比の高い集電極(表面電極)を形成することで変換効率を向上させた太陽電池素子の製造方法及びこれによって得られた太陽電池素子を提供することを目的とする。   The present invention has been made in view of the above circumstances, and manufacture of a solar cell element having improved conversion efficiency by forming a collector electrode (surface electrode) with reduced surface irregularities, low resistance, and high aspect ratio. It aims at providing the method and the solar cell element obtained by this.

本発明者らは、上記目的を達成するために鋭意検討を重ねた結果、半導体基板上にスクリーン印刷法により導電性ペーストを複数回重ねて印刷して多層電極を形成するに際し、スクリーン印刷製版を用いて一層目の電極を印刷した後、上記基板又はスクリーン印刷製版の位置を一層目の電極印刷時の基板又はスクリーン印刷製版位置より一層目の電極の長手方向に沿ってずらした状態で上記一層目の電極の直上にこれと重ねて二層目の電極を印刷し、更に必要により、三層目以降の電極を上記と同じ方向に順次ずらして印刷することで、二層電極の場合、一層目と二層目のメッシュ痕による凹凸が打ち消しあって影響が小さくなり、厚みのばらつきが抑えられ、低抵抗な電極を形成することができ、この電極を太陽電池素子の受光面電極として用いることで、変換効率の高い太陽電池素子を得ることができることを見出し、本発明をなすに至った。   As a result of intensive studies to achieve the above object, the present inventors have conducted screen printing plate making on forming a multi-layer electrode by printing a conductive paste on a semiconductor substrate a plurality of times by screen printing. After printing the first layer electrode, the position of the substrate or screen printing plate making is shifted in the longitudinal direction of the first layer electrode from the position of the substrate or screen printing plate making position during the first layer electrode printing. In the case of a two-layer electrode, a second layer electrode is printed directly on the second electrode, and if necessary, the third and subsequent electrodes are sequentially shifted in the same direction as described above. The unevenness caused by the mesh marks on the second layer and the second layer cancels each other, reducing the effect of variations in thickness and forming a low-resistance electrode. This electrode is used as the light-receiving surface electrode of the solar cell element. It is used, found that it is possible to obtain high conversion efficiency solar cell element, the present invention has been accomplished.

即ち、本発明は、下記の太陽電池素子の製造方法及び太陽電池素子を提供する。
〔請求項1〕
半導体基板上にスクリーン印刷法により導電性ペーストを複数回重ねて印刷して多層電極を形成するに際し、スクリーン印刷製版を用いて一層目の電極を印刷した後、上記基板又はスクリーン印刷製版の位置を一層目の電極印刷時の基板又はスクリーン印刷製版位置より一層目の電極の長手方向に沿ってずらした状態で上記一層目の電極の直上にこれと重ねて二層目の電極を印刷し、更に必要により、三層目以降の電極を上記と同じ方向に順次ずらして印刷して多層電極を形成する工程を具備することを特徴とする太陽電池素子の製造方法。
〔請求項2〕
上記基板又はスクリーン印刷製版をずらす距離が8〜15μmである請求項1記載の製造方法。
〔請求項3〕
前記導電性ペーストの粘度が、ブルックフィールド回転粘度計により、温度25℃、14号ロータ5rpmの条件での測定値として600〜900Pa・sであり、かつ50rpmの条件での測定値として160〜200Pa・sである請求項1又は2記載の製造方法。
〔請求項4〕
少なくとも一層目と二層目の電極を形成する際に同じメッシュの製版を使用することを特徴とする請求項1乃至3のいずれか1項記載の製造方法。
〔請求項5〕
請求項1乃至4のいずれか1項記載の製造方法によって得られる太陽電池素子。
That is, this invention provides the manufacturing method and solar cell element of the following solar cell element.
[Claim 1]
When forming a multilayer electrode by printing a conductive paste on a semiconductor substrate a plurality of times by screen printing, after printing the first electrode using screen printing plate making, the position of the substrate or screen printing plate making is determined. The second layer electrode is printed directly on the first layer electrode in a state shifted from the substrate or screen printing plate making position of the first layer electrode along the longitudinal direction of the first layer electrode, A method for producing a solar cell element, comprising: a step of forming a multilayer electrode by printing the third and subsequent electrodes sequentially shifted in the same direction as described above, if necessary.
[Claim 2]
The manufacturing method according to claim 1, wherein a distance for shifting the substrate or screen printing plate making is 8 to 15 μm.
[Claim 3]
The conductive paste has a viscosity of 600 to 900 Pa · s as a measured value under conditions of a temperature of 25 ° C. and a No. 14 rotor of 5 rpm using a Brookfield rotational viscometer, and as a measured value under a condition of 50 rpm as 160 to 200 Pa. The production method according to claim 1, which is s.
[Claim 4]
The manufacturing method according to any one of claims 1 to 3, wherein the same mesh plate making is used when forming at least the first layer electrode and the second layer electrode.
[Claim 5]
The solar cell element obtained by the manufacturing method of any one of Claims 1 thru | or 4.

本発明によれば、二層目以降の集電極を印刷する際、好ましくは製版の線径(例えば、325メッシュの場合は28μm)の2分の1(=14μm)だけ、意図的に基板又はスクリーン印刷板を集電極の長手方向に沿って移動させて印刷している。これにより、一層目の電極に発生しているメッシュ痕が二層目の電極印刷時に押しつぶされることになる。従って、形成された集電極に発生する厚みの凹凸の影響が、移動させずに一層目の集電極の上にそのまま二層目の集電極を印刷した場合に比べて小さくなり、滑らかな半円形状の抵抗の低い集電極を形成することができる。そのため、曲線因子の高い太陽電池素子を作ることができる。   According to the present invention, when the second and subsequent collector electrodes are printed, it is preferable that the substrate or the substrate or the substrate is intentionally formed by a half (= 14 μm) of the plate diameter (for example, 28 μm in the case of 325 mesh). Printing is performed by moving the screen printing plate along the longitudinal direction of the collector electrode. As a result, the mesh mark generated on the first layer electrode is crushed when the second layer electrode is printed. Therefore, the thickness unevenness generated on the formed collector electrode is smaller than when the second collector electrode is printed as it is on the first collector electrode without moving, and a smooth semicircle is formed. A collector electrode having a low shape resistance can be formed. Therefore, a solar cell element with a high fill factor can be made.

また、高粘度のペーストを用いて同一メッシュの製版を使用してスクリーン印刷を複数回、通常2〜7回行うため、印圧がかけられた際に生じる製版間の伸び方の差を最小にとどめ、かつ電極間のズレ、ペーストのダレによるシャドーロスの発生を最小限に抑え、かつ正確にアスペクト比を高くすることができる。更に、通常のスクリーン印刷で形成された集電極は、凹凸があるため、電極に入射した光は反射されてしまう。しかし、本発明により形成された滑らかな半円形状の集電極は、光が照射されると反射して太陽電池素子の反射防止膜上に入射させることが可能になる。これにより、太陽電池素子の短絡電流も上昇し、変換効率の更なる上昇を可能とする。   Also, since screen printing is performed multiple times, usually 2-7 times, using a high-viscosity paste with the same mesh platemaking, the difference in elongation between platemaking that occurs when printing pressure is applied is minimized. It is possible to minimize shadow loss due to displacement between electrodes and sagging of paste, and to accurately increase the aspect ratio. Furthermore, since the collector electrode formed by normal screen printing has unevenness, the light incident on the electrode is reflected. However, the smooth semicircular collector electrode formed according to the present invention can be reflected and incident on the antireflection film of the solar cell element when irradiated with light. Thereby, the short circuit current of a solar cell element also rises, and the conversion efficiency can be further increased.

また、この集電極の複数回印刷において、各印刷に用いられるペーストの種類は異なっていてもよい。また、この集電極の複数回印刷において、一層目と二層目、二層目と三層目、それ以降などで重ねて印刷する際のずらし量を少しずつ変えていてもよい。これにより、更に凹凸の発生を抑えることができる。   Moreover, in the multiple times printing of this collector electrode, the kind of paste used for each printing may differ. In addition, in the multiple printing of the collector electrode, the amount of shift when the first layer and the second layer, the second layer and the third layer, and the subsequent layers are overprinted may be changed little by little. Thereby, generation | occurrence | production of an unevenness | corrugation can be suppressed further.

太陽電池素子の構造の一例を示す断面図である。It is sectional drawing which shows an example of the structure of a solar cell element. スクリーン印刷工程を説明する模式図であり、(I)は印刷前、(II)は印刷後の図である。It is a schematic diagram explaining a screen printing process, (I) is a figure before printing, (II) is a figure after printing. 従来の集電極を示し、(I)は斜視図であり、(II)は(I)の一点鎖線で示す面に沿って切断した断面図を示す。The conventional collector electrode is shown, (I) is a perspective view, (II) shows sectional drawing cut | disconnected along the surface shown with the dashed-dotted line of (I). 従来の二層集電極を示し、(I)は斜視図であり、(II)は(I)の一点鎖線で示す面に沿って切断した断面図を示す。A conventional two-layer collector electrode is shown, (I) is a perspective view, and (II) is a sectional view cut along a plane indicated by a dashed line in (I). 本発明の二層集電極を示し、(I)は斜視図であり、(II)は(I)の一点鎖線で示す面に沿って切断した断面図を示す。The double-layer collector electrode of this invention is shown, (I) is a perspective view, (II) shows sectional drawing cut | disconnected along the surface shown with the dashed-dotted line of (I). 従来の二層集電極の他の例を示し、(I)は斜視図であり、(II)は(I)の一点鎖線で示す面に沿って切断した断面図を示す。The other example of the conventional 2 layer collector electrode is shown, (I) is a perspective view, (II) shows sectional drawing cut | disconnected along the surface shown with the dashed-dotted line of (I). 本発明の二層集電極の他の例を示し、(I)は斜視図であり、(II)は(I)の一点鎖線で示す面に沿って切断した断面図を示す。The other example of the two-layer collector electrode of this invention is shown, (I) is a perspective view, (II) shows sectional drawing cut | disconnected along the surface shown with the dashed-dotted line of (I). 基板をずらした距離と曲線因子(FF)との関係を表すグラフである。It is a graph showing the relationship between the distance which shifted the board | substrate, and a fill factor (FF).

本発明の太陽電池素子の製造方法は、半導体基板上にスクリーン印刷法により導電性ペーストを複数回重ねて印刷して多層電極を形成するに際し、スクリーン印刷製版を用いて一層目の電極を印刷した後、上記基板又はスクリーン印刷製版の位置を一層目の電極印刷時の基板又はスクリーン印刷製版位置より一層目の電極の長手方向に沿ってずらした状態で上記一層目の電極の直上にこれと重ねて二層目の電極を印刷し、更に必要により、三層目以降の電極を上記と同じ方向に順次ずらして印刷して多層電極を形成する工程を有することを特徴とする。   In the method for producing a solar cell element of the present invention, when forming a multilayer electrode by printing a conductive paste on a semiconductor substrate multiple times by screen printing, the first electrode was printed using screen printing plate making. After that, the position of the substrate or screen printing plate making is shifted from the substrate or screen printing plate making position at the time of printing the first electrode along the longitudinal direction of the first layer electrode, and is superimposed on the first layer electrode. The second layer electrode is printed, and if necessary, the third and subsequent electrodes are sequentially shifted in the same direction as described above to form a multilayer electrode.

本発明に係る太陽電池素子の製造方法によって作製される太陽電池素子は、図1に示すように、太陽電池本体である半導体基板1と、この基板の片面に形成されたこれとは異なる導電型の不純物層2と、この不純物層上に形成された反射防止膜3と、裏面電極5と、BSF(Back Surface Field)層4と、表面の集電極6とを備える。半導体基板としては、p型又はn型単結晶シリコン基板、p型又はn型多結晶シリコン基板、p型又はn型薄膜シリコン基板、非シリコン系の化合物半導体基板等の半導体基板を用いることができる。不純物層は、半導体基板の導電型とは異なる導電型のものであればよい。   As shown in FIG. 1, a solar cell element produced by the method for manufacturing a solar cell element according to the present invention has a semiconductor substrate 1 that is a solar cell body and a different conductivity type formed on one side of the substrate. The impurity layer 2, the antireflection film 3 formed on the impurity layer, the back electrode 5, the BSF (Back Surface Field) layer 4, and the collector electrode 6 on the surface are provided. As the semiconductor substrate, a semiconductor substrate such as a p-type or n-type single crystal silicon substrate, a p-type or n-type polycrystalline silicon substrate, a p-type or n-type thin film silicon substrate, or a non-silicon compound semiconductor substrate can be used. . The impurity layer may be of a conductivity type different from that of the semiconductor substrate.

一例を示すと、まず、ホウ素、ガリウムのようなIII族元素をドープしたp型シリコン基板等の半導体基板を準備する。これは多結晶でも単結晶でもよく、上記したように大きさが100〜150mm角、厚みが0.1〜0.3mmの板状のものが好適に用いられる。そして、太陽電池素子の受光面となる基板の表面に、例えば酸性溶液中に浸漬してから、更にアルカリ溶液で化学エッチングして洗浄、乾燥することで、テクスチャとよばれる凹凸構造を形成する。凹凸構造は、太陽電池素子受光面において光の多重反射を生じさせる。そのため、凹凸構造を形成することにより、実効的に反射率が低減し、変換効率が向上する。   As an example, first, a semiconductor substrate such as a p-type silicon substrate doped with a group III element such as boron or gallium is prepared. This may be a polycrystal or a single crystal, and as described above, a plate having a size of 100 to 150 mm square and a thickness of 0.1 to 0.3 mm is preferably used. Then, a concavo-convex structure called a texture is formed by immersing the substrate in the acidic solution, for example, in the surface of the solar cell element, followed by chemical etching with an alkaline solution, followed by washing and drying. The concavo-convex structure causes multiple reflection of light on the light receiving surface of the solar cell element. Therefore, by forming the concavo-convex structure, the reflectance is effectively reduced and the conversion efficiency is improved.

テクスチャの形成は、加熱した水酸化ナトリウム、水酸化カリウム、炭酸カリウム、炭酸ナトリウム、炭酸水素ナトリウム等のアルカリ溶液(濃度数質量%から数十質量%、温度60〜100℃)中に10〜30分程度浸漬することで、容易に作製される。上記溶液中に、所定量の2−プロパノール等を溶解させ、反応を促進させることが多い。均一なテクスチャ形成のためには、60〜70℃に加熱した濃度数質量%の水酸化ナトリウム又は水酸化カリウム溶液中に、数質量%の2−プロパノールを混合した溶液を用いるのが好ましい。   The texture is formed by heating in an alkali solution (concentration of several mass% to several tens mass%, temperature 60-100 ° C.) such as heated sodium hydroxide, potassium hydroxide, potassium carbonate, sodium carbonate, sodium hydrogen carbonate, etc. It is easily produced by soaking for about a minute. A predetermined amount of 2-propanol or the like is often dissolved in the solution to promote the reaction. In order to form a uniform texture, it is preferable to use a solution obtained by mixing several mass% of 2-propanol in a sodium hydroxide or potassium hydroxide solution having a concentration of several mass% heated to 60 to 70 ° C.

テクスチャ形成後、塩酸、硫酸、硝酸、フッ酸等の無機酸を一種単独で又は二種以上を併用した混合液の酸性水溶液中で洗浄する。経済的及び効率的見地から、塩酸中での洗浄が好ましい。清浄度を向上させるため、塩酸溶液中に、数質量%の過酸化水素を混合し、60〜90℃で1〜30分間加温して洗浄してもよい。   After texture formation, washing is carried out in an acidic aqueous solution of a mixed solution using inorganic acids such as hydrochloric acid, sulfuric acid, nitric acid and hydrofluoric acid alone or in combination of two or more. From an economic and efficient standpoint, washing in hydrochloric acid is preferred. In order to improve the cleanliness, several mass% hydrogen peroxide may be mixed in a hydrochloric acid solution and heated at 60 to 90 ° C. for 1 to 30 minutes for washing.

次に、例えばPOCl3などを含む、約800℃以上の高温ガス中にp型シリコン基板を設置し、p型シリコン基板の表面全面にリン等のn型不純物元素を拡散させる熱拡散法により、n型拡散層を表面に形成する。n型拡散層の深さは0.2〜1.0μmが好ましく、シート抵抗は40〜150Ω/□が好ましい。なお、n型拡散層を熱拡散により形成する場合には、p型シリコン基板の両面及び端面にもn型拡散層が形成されることがあるが、この場合には、必要なn型拡散層の表面を耐酸性樹脂で被覆してフッ硝酸溶液中にp型シリコン基板を浸漬することによって、不要なn型拡散層を除去することができる。
なお、この行程は、上記気相拡散法以外にも、拡散剤によるスピンコート法、スプレー法等により行うことができる。
Next, a p-type silicon substrate is placed in a high-temperature gas at about 800 ° C. or higher containing, for example, POCl 3 and the like, and a thermal diffusion method in which an n-type impurity element such as phosphorus is diffused over the entire surface of the p-type silicon substrate, An n-type diffusion layer is formed on the surface. The depth of the n-type diffusion layer is preferably 0.2 to 1.0 μm, and the sheet resistance is preferably 40 to 150Ω / □. When the n-type diffusion layer is formed by thermal diffusion, the n-type diffusion layer may be formed on both surfaces and end surfaces of the p-type silicon substrate. In this case, the necessary n-type diffusion layer is formed. By coating the surface of the substrate with an acid resistant resin and immersing the p-type silicon substrate in a hydrofluoric acid solution, an unnecessary n-type diffusion layer can be removed.
This step can be performed by a spin coating method using a diffusing agent, a spray method, or the like, in addition to the vapor phase diffusion method.

この後、表面の反射防止膜の形成を行う。反射防止膜には、酸化シリコンをはじめ、酸化セリウム、アルミナ、二酸化錫、二酸化チタン、酸化タンタル等の酸化物や、窒化シリコン、フッ化マグネシウム等の無機物からなる膜や、これらのうちの二種を組み合わせた二層膜が使用され、いずれを用いても問題ない。反射防止膜形成には、PVD法、CVD法等が用いられ、いずれの方法でも可能である。例えば、アンモニア、シラン、窒素、水素などを用いたプラズマCVD法などにより、基板の表面に反射防止膜SiNを形成することができる。   Thereafter, an antireflection film on the surface is formed. Antireflection films include silicon oxide, oxides such as cerium oxide, alumina, tin dioxide, titanium dioxide and tantalum oxide, films made of inorganic substances such as silicon nitride and magnesium fluoride, and two of these A two-layered film is used, and any of them can be used without any problem. For the formation of the antireflection film, a PVD method, a CVD method or the like is used, and any method is possible. For example, the antireflection film SiN can be formed on the surface of the substrate by a plasma CVD method using ammonia, silane, nitrogen, hydrogen, or the like.

次いで、裏面に、例えばアルミニウムとガラスフリットとワニスなどを含む導電性ペーストをスクリーン印刷し、乾燥させて厚さ20〜80μmの裏面電極を形成する。この場合のスクリーン印刷に使用する版のメッシュは限定されない。また、金属層の堆積は、スパッタリング法、真空蒸着法で行ってもよい。通常、電極金属は裏面に一様に形成する。   Next, a conductive paste containing, for example, aluminum, glass frit, varnish, and the like is screen-printed on the back surface and dried to form a back electrode having a thickness of 20 to 80 μm. The mesh of the plate used for screen printing in this case is not limited. The metal layer may be deposited by a sputtering method or a vacuum evaporation method. Usually, the electrode metal is uniformly formed on the back surface.

しかる後、表面に、例えば銀とガラスフリットとワニスなどを含む導電性ペーストをスクリーン印刷し、130〜250℃で乾燥させて一層目の集電極を形成する。この場合のスクリーン印刷に使用する版のメッシュの組織は、平織、綾織等で、経糸及び緯糸の数が均等に織られたものが好ましく、200〜500メッシュ(メッシュ数(糸の本数/インチ))、より好ましくは230〜360メッシュがよい。メッシュ数が少なすぎると太い線径が製版の集電極の開口を跨ぎ、導電性ペーストの吐出量が少なくなる場合があり、多すぎると製版のスクリーン厚自体が薄くなることから、導電性ペーストの吐出量が少なくなって集電極の膜厚が薄くなり、抵抗が高くなる場合がある。   Thereafter, a conductive paste containing, for example, silver, glass frit, and varnish is screen printed on the surface and dried at 130 to 250 ° C. to form a first collector electrode. The mesh structure of the plate used for screen printing in this case is a plain weave, twill weave, etc., preferably having a uniform number of warps and wefts, 200 to 500 mesh (number of meshes (number of yarns / inch)) ), More preferably 230 to 360 mesh. If the number of meshes is too small, the thick wire diameter may straddle the opening of the collector electrode of the plate making, and the discharge amount of the conductive paste may be reduced.If the mesh number is too large, the screen thickness of the plate making itself is reduced. In some cases, the discharge amount decreases, the thickness of the collector electrode decreases, and the resistance increases.

また、メッシュの線径(線幅)は、太すぎると製版の集電極の開口を跨ぐので集電極にメッシュ痕が残ってしまうが、一方で細すぎると製版の耐久性が悪化してしまう点から、18〜40μm、特に24〜30μmであることが好ましく、厚さは、厚すぎると導電性ペーストがパターンの開口の壁との摩擦で吐出しにくくなってしまうが、一方で薄すぎると導電性ペーストの吐出量が少なくなって集電極の膜厚が薄くなり、抵抗が高くなってしまう点から42〜98μm、特に48〜73μmであることが好ましい。
具体的には、325メッシュ(線径28μm)、厚みは59μmのものを好適に用いることができる。
Also, if the mesh wire diameter (line width) is too thick, it will straddle the opening of the collector electrode of the plate making, leaving mesh marks on the collector electrode, but if it is too thin, the durability of the plate making will deteriorate. Therefore, it is preferable that the thickness is 18 to 40 μm, particularly 24 to 30 μm. If the thickness is too thick, it becomes difficult to discharge the conductive paste due to friction with the wall of the pattern opening. From the point that the discharge amount of the conductive paste is reduced, the film thickness of the collector electrode is reduced, and the resistance is increased, the thickness is preferably 42 to 98 μm, particularly 48 to 73 μm.
Specifically, a 325 mesh (wire diameter of 28 μm) and a thickness of 59 μm can be suitably used.

その後、一層目の集電極を形成した際と同じメッシュの製版を使用して、前記集電極直上に正確に重なるように、基板のアライメントを行うことが好ましい。そして、例えば製版に使用しているメッシュの線径の半分だけ、具体的には8〜15μm、好ましくは10〜14μm集電極の長手方向に沿って更に基板を移動させてから、導電性ペーストを一層目の電極に重ねて印刷して、二層目の電極を形成し、更に650〜900℃で焼成を行う。   After that, it is preferable to align the substrate so that it is accurately superimposed directly on the collector electrode using the same mesh plate making as that for forming the first collector electrode. Then, for example, only half the wire diameter of the mesh used for plate making, specifically 8-15 μm, preferably 10-14 μm, further moving the substrate along the longitudinal direction of the collector electrode, A second electrode is formed by printing over the first electrode, and further baked at 650 to 900 ° C.

本発明においては、このようにして形成された二層電極上に三層目以降を更に重ねて形成してもよい。この場合、既に形成された二層電極の長手方向に沿って上記と同じ方向に6〜12μm、特に7〜8μmずらして三層目以降を順次形成することが好ましい。得られる電極のアスペクト比は、0.3〜1程度であることが形成された滑らかな半円形状の集電極上に当たった光が、反射して太陽電池素子の反射防止膜上に入射させることが可能になる割合が大きくなる点から好ましい。   In the present invention, the third and subsequent layers may be further stacked on the two-layer electrode formed as described above. In this case, it is preferable to sequentially form the third and subsequent layers by shifting 6 to 12 μm, particularly 7 to 8 μm in the same direction as described above along the longitudinal direction of the already formed two-layer electrode. The resulting electrode has an aspect ratio of about 0.3 to 1, and the light hitting the smooth semicircular collector electrode is reflected and incident on the antireflection film of the solar cell element. This is preferable from the viewpoint of increasing the rate at which it becomes possible.

ここで、一層目と二層目、更に必要により形成する三層目以降に使用する導電性ペーストは同じであっても異なっていてもよいが、ブルックフィールド回転粘度計により、温度25℃、14号ロータ5rpmの条件で測定した粘度が600〜900Pa・sであり、かつ50rpmの条件で測定した粘度が160〜200Pa・sであることが好ましい。粘度がこれより小さすぎると印刷時に吐出した導電性ペーストがダレてしまい、アスペクト比が小さくなる場合があり、大きすぎると製版の開口の壁と導電性ペーストの摩擦が大きくなり、吐出量が少なくなる場合がある。   Here, the conductive paste used in the first and second layers, and further, if necessary, the third and subsequent layers may be the same or different. It is preferable that the viscosity measured under the condition of No. 5 rotor is 600 to 900 Pa · s and the viscosity measured under the condition of 50 rpm is 160 to 200 Pa · s. If the viscosity is lower than this, the conductive paste discharged during printing may sag and the aspect ratio may be reduced, and if it is too high, the friction between the wall of the plate-making opening and the conductive paste will increase and the discharge amount will be small. There is a case.

表面の集電極の形成に用いられる導電性ペーストとして、具体的には、銀等の金属粒子を60〜95質量%、特に70〜90質量%含有するものが好ましい。   Specifically, the conductive paste used for forming the surface collector electrode is preferably one containing 60 to 95 mass%, particularly 70 to 90 mass%, of metal particles such as silver.

ガラスフリットとしてはB−Pb−O系、B−Si−Pb−O系、B−Si−Bi−Pb−O系、B−Si−Zn−O系、B−Si−Pb−Al−O系のもので、例えば、PbO、B23、Al23等の酸化物を用いることができ、導電性ペースト中に0.1〜15質量%、特に1〜10質量%含有するものが好ましい。 As glass frit, B-Pb-O, B-Si-Pb-O, B-Si-Bi-Pb-O, B-Si-Zn-O, B-Si-Pb-Al-O For example, an oxide such as PbO, B 2 O 3 , Al 2 O 3 can be used, and the conductive paste contains 0.1 to 15% by mass, particularly 1 to 10% by mass. preferable.

ワニスとしては、エチルセルロースやニトロセルロース等が挙げられ、導電性ペースト中に1〜25質量%、特に2〜20質量%含有するものが好ましい。   Examples of the varnish include ethyl cellulose and nitrocellulose, and those containing 1 to 25% by mass, particularly 2 to 20% by mass in the conductive paste are preferable.

導電性ペースト中には、ブチルカルビトール、ブチルカルビトールアセテート、αテルピネオール等の有機溶媒が1〜15質量%の割合で含まれることが好ましく、上述した成分以外にもジブチルカルビトール、ヘキシレングリコール、テキサノール等を含有することができる。   The conductive paste preferably contains an organic solvent such as butyl carbitol, butyl carbitol acetate, and α-terpineol in a proportion of 1 to 15% by mass. In addition to the above components, dibutyl carbitol and hexylene glycol are also included. , Texanol and the like can be contained.

こうして多層集電極を形成する場合に、意図的なアライメントのずらしを行わない通常の印刷で二層目の電極を重ねてできる集電極を図4に示す。(I)は斜視図であり、(II)は(I)の一点鎖線で示す面に沿って切断した断面図である。一層目13と二層目14で同じメッシュの製版を使う場合、メッシュ痕の影響が増幅され、凹凸が大きくなり、集電極の抵抗が小さくならない。   FIG. 4 shows a collector electrode that can be formed by superposing the second layer electrode by normal printing without intentionally shifting the alignment when forming a multilayer collector electrode in this way. (I) is a perspective view, and (II) is a cross-sectional view cut along a plane indicated by a dashed line in (I). When the same mesh plate making is used for the first layer 13 and the second layer 14, the influence of the mesh mark is amplified, the unevenness is increased, and the resistance of the collector electrode is not decreased.

そこで、本発明を適用して形成された多層集電極を図5に示す。一層目16と二層目17からなる集電極のメッシュ痕による凹凸同士が打ち消しあって影響が小さくなり、厚みのばらつきが抑えられると同時に、形成された電極の形状は滑らかな半円形状になる。従って、曲線因子の向上幅がそのまま二層目の集電極を一層目の集電極の直上に重ねて印刷したときより大きくなる。また、図6に示すように、通常の多層印刷で形成された集電極18は、メッシュ痕の影響で集電極に入射した光19を反射してしまい(反射光20)有効利用できないが、図7に示すように、本発明を適用して形成された多層集電極21は、半円形状の集電極に光が入射する(入射光19)と反射防止膜上に反射するため(反射光20)、短絡電流の向上も見込める。   A multilayer collector electrode formed by applying the present invention is shown in FIG. The unevenness caused by the mesh marks of the collector electrode composed of the first layer 16 and the second layer 17 cancels each other, and the influence is reduced. The variation in thickness is suppressed, and the formed electrode has a smooth semicircular shape. . Therefore, the improvement width of the fill factor is larger than when the second layer collector electrode is printed directly on the first layer collector electrode. Further, as shown in FIG. 6, the collector electrode 18 formed by normal multi-layer printing reflects light 19 incident on the collector electrode due to the influence of mesh marks (reflected light 20), but cannot be used effectively. As shown in FIG. 7, the multilayer collector electrode 21 formed by applying the present invention is reflected on the antireflection film when the light enters the semicircular collector electrode (incident light 19) (reflected light 20). ) The short circuit current can be improved.

なお、図5に示すように、本発明を適用して形成された多層集電極の長さは、一層目の集電極の長さ自体より長くなってしまう。これを見越して、製版のパターンにおける集電極の長さを、あらかじめずらし量分だけ短くしておいてもよい。   In addition, as shown in FIG. 5, the length of the multilayer collector electrode formed by applying the present invention is longer than the length of the first-layer collector electrode itself. In anticipation of this, the length of the collector electrode in the plate-making pattern may be shortened in advance by the amount of shift.

こうして形成される本発明の電極の形状としては、櫛形、魚骨形、渦巻き形等使用用途により適宜選定することができる。   The shape of the electrode of the present invention formed in this manner can be appropriately selected depending on the use application such as a comb shape, a fishbone shape, a spiral shape or the like.

以下、実施例及び比較例を示し、本発明をより具体的に説明するが、本発明は下記の実施例に制限されるものではない。   EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated more concretely, this invention is not restrict | limited to the following Example.

[実施例1]
まず、ボロンがドープされ、厚さ0.2mmにスライスして作製された比抵抗が約1Ω・cmのp型の多結晶シリコンからなるp型シリコン基板に外径加工を行うことによって、一辺15cmの正方形の板状とした。そして、このp型シリコン基板をフッ硝酸溶液中に15秒間浸漬させ、更にアルカリ溶液で5分間化学エッチングした後に純水で洗浄し、乾燥させることで、p型シリコン基板表面にテクスチャ構造を形成した。
次に、このp型シリコン基板に対し、POCl3ガス雰囲気中において、870℃の温度で30分間の条件で熱拡散法により、p型シリコン基板にn層を形成した。ここで、n層のシート抵抗は約40Ω/□であった。そして、n層上に耐酸性樹脂を形成した後に、p型シリコン基板をフッ硝酸溶液中に10秒間浸漬することによって、耐酸性樹脂が形成されていない部分のn層を除去した。その後、耐酸性樹脂を除去することによって、p型シリコン基板の表面のみにn層を形成した。続いて、アンモニアガスを用いたプラズマCVD法により、p型シリコン基板のn層が形成されている表面上に、反射防止膜となるSiNを厚さ100nmで形成した。
[Example 1]
First, by performing outer diameter processing on a p-type silicon substrate made of p-type polycrystalline silicon having a specific resistance of about 1 Ω · cm, which is doped with boron and sliced to a thickness of 0.2 mm, a side of 15 cm is formed. The square plate shape. The p-type silicon substrate was immersed in a hydrofluoric acid solution for 15 seconds, further chemically etched with an alkaline solution for 5 minutes, washed with pure water, and dried to form a textured structure on the p-type silicon substrate surface. .
Next, an n layer was formed on the p-type silicon substrate by a thermal diffusion method in a POCl 3 gas atmosphere at a temperature of 870 ° C. for 30 minutes. Here, the sheet resistance of the n layer was about 40Ω / □. Then, after forming the acid resistant resin on the n layer, the p-type silicon substrate was immersed in a hydrofluoric acid solution for 10 seconds to remove the portion of the n layer where the acid resistant resin was not formed. Thereafter, the acid-resistant resin was removed to form an n layer only on the surface of the p-type silicon substrate. Subsequently, SiN serving as an antireflection film was formed to a thickness of 100 nm on the surface of the p-type silicon substrate on which the n layer was formed by plasma CVD using ammonia gas.

次いで、反射防止膜が形成された基板の裏面に、導電性アルミニウムペーストを印刷し、150℃で乾燥させた。その後、表面にスクリーン印刷法を用いて、ブルックフィールド回転粘度計により、温度25℃、14号ロータ5rpmの条件で測定した粘度が720Pa・s、かつ50rpmの条件で測定した粘度が175Pa・sである銀ペーストを用いて、325メッシュ(線径28μm)の製版を用いて一層目の集電極を形成し、150℃で乾燥させた。次に、同じ325メッシュの製版を用いて、前記集電極直上に正確に重なるように、基板のアライメントを行った。そして、14μmだけ集電極と平行方向に(集電極に沿って)更に基板を移動させて、導電性ペーストを重ねて印刷して、再度150℃で乾燥させた後、最高温度800℃で焼成して集電極を形成した。   Next, a conductive aluminum paste was printed on the back surface of the substrate on which the antireflection film was formed, and dried at 150 ° C. Then, using a screen printing method on the surface, with a Brookfield rotational viscometer, the viscosity measured under the conditions of a temperature of 25 ° C. and a No. 14 rotor of 5 rpm was 720 Pa · s, and the viscosity measured under a condition of 50 rpm was 175 Pa · s. Using a silver paste, a first collector electrode was formed using a 325 mesh (wire diameter 28 μm) plate making and dried at 150 ° C. Next, using the same 325 mesh plate-making, the substrate was aligned so as to be accurately overlaid on the collector electrode. Then, the substrate is moved further in the direction parallel to the collector electrode (along the collector electrode) by 14 μm, the conductive paste is overprinted, dried again at 150 ° C., and then baked at a maximum temperature of 800 ° C. Thus, a collector electrode was formed.

その結果、図5に示すように電極のメッシュ痕による凹凸がなくなり、厚みのばらつきが抑えられると同時に、より滑らかな半円形状の電極を形成することができた。表1に、上記方法でスクリーン印刷を行った際の太陽電池特性と、電極厚みのばらつきの差を示す。なお、短絡電流、曲線因子、開放電圧、変換効率は(株)エヌ・ピー・シー製セルテスターにより測定し、電極厚さは(株)キーエンス製レーザー顕微鏡により測定した。   As a result, as shown in FIG. 5, the unevenness due to the electrode mesh marks was eliminated, and the variation in thickness was suppressed, and at the same time, a smoother semicircular electrode could be formed. Table 1 shows the difference in solar cell characteristics and electrode thickness variation when screen printing is performed by the above method. The short-circuit current, fill factor, open-circuit voltage, and conversion efficiency were measured with a cell tester manufactured by NPC, and the electrode thickness was measured with a laser microscope manufactured by Keyence Corporation.

[比較例1]
一層目と二層目の意図的なずらしを行わない以外は実施例1と同様にして二層電極形成を行った。実施例1と同様に測定した太陽電池特性と、電極厚みのばらつきの差を表1に示す。
[Comparative Example 1]
A two-layer electrode was formed in the same manner as in Example 1 except that the intentional shift of the first and second layers was not performed. Table 1 shows the solar cell characteristics measured in the same manner as in Example 1 and the difference in variation in electrode thickness.

Figure 2011061109
Figure 2011061109

表1に示すように、本発明によるスクリーン印刷方法を用いると、電極厚みのばらつきを抑え、太陽電池特性の上昇が見込める。   As shown in Table 1, when the screen printing method according to the present invention is used, variations in electrode thickness are suppressed, and an increase in solar cell characteristics can be expected.

[実施例2〜4]
表2に示すように、基板を移動させる距離を変えて二層目の印刷を行った以外は実施例1と同様にそれぞれ集電極を形成し、太陽電池特性を測定した。結果を表2に併記する。また、図8に基板をずらした距離と曲線因子(FF)との関係を表すグラフを示す。
[Examples 2 to 4]
As shown in Table 2, collector electrodes were formed in the same manner as in Example 1 except that the second layer printing was performed by changing the distance to which the substrate was moved, and the solar cell characteristics were measured. The results are also shown in Table 2. FIG. 8 is a graph showing the relationship between the distance of shifting the substrate and the fill factor (FF).

Figure 2011061109
Figure 2011061109

表1,2に示すように、本発明によるスクリーン印刷方法を用いると、曲線因子が78%以上であり、充分な値であった。   As shown in Tables 1 and 2, when the screen printing method according to the present invention was used, the fill factor was 78% or more, which was a sufficient value.

1 半導体基板(p型シリコン基板)
2 不純物層(N層)
3 反射防止膜
4 BSF層
5 裏面電極
6 表面電極(集電極)
7 製版
8 導電性ペースト
9 スキージ
10 基板
15 表面電極(多層集電極)
16 一層目電極
17 二層目電極
19 入射光
20 反射光
21 表面電極(多層集電極)
D 長手方向
1 Semiconductor substrate (p-type silicon substrate)
2 Impurity layer (N layer)
3 Antireflection film 4 BSF layer 5 Back electrode 6 Front electrode (collecting electrode)
7 Plate Making 8 Conductive Paste 9 Squeegee 10 Substrate 15 Surface Electrode (Multilayer Collector)
16 First layer electrode 17 Second layer electrode 19 Incident light 20 Reflected light 21 Surface electrode (multilayer collector electrode)
D Longitudinal direction

Claims (5)

半導体基板上にスクリーン印刷法により導電性ペーストを複数回重ねて印刷して多層電極を形成するに際し、スクリーン印刷製版を用いて一層目の電極を印刷した後、上記基板又はスクリーン印刷製版の位置を一層目の電極印刷時の基板又はスクリーン印刷製版位置より一層目の電極の長手方向に沿ってずらした状態で上記一層目の電極の直上にこれと重ねて二層目の電極を印刷し、更に必要により、三層目以降の電極を上記と同じ方向に順次ずらして印刷して多層電極を形成する工程を具備することを特徴とする太陽電池素子の製造方法。   When forming a multilayer electrode by printing a conductive paste on a semiconductor substrate a plurality of times by screen printing, after printing the first electrode using screen printing plate making, the position of the substrate or screen printing plate making is determined. A second layer electrode is printed directly on the first layer electrode in a state shifted from the substrate or screen printing plate making position of the first layer electrode along the longitudinal direction of the first layer electrode, A method for producing a solar cell element, comprising: a step of forming a multilayer electrode by printing the third and subsequent electrodes sequentially shifted in the same direction as described above, if necessary. 上記基板又はスクリーン印刷製版をずらす距離が8〜15μmである請求項1記載の製造方法。   The manufacturing method according to claim 1, wherein a distance for shifting the substrate or screen printing plate making is 8 to 15 μm. 前記導電性ペーストの粘度が、ブルックフィールド回転粘度計により、温度25℃、14号ロータ5rpmの条件での測定値として600〜900Pa・sであり、かつ50rpmの条件での測定値として160〜200Pa・sである請求項1又は2記載の製造方法。   The viscosity of the conductive paste is 600 to 900 Pa · s as a measured value under conditions of a temperature of 25 ° C. and a rotor No. 14 of 5 rpm by a Brookfield rotational viscometer, and as a measured value under a condition of 50 rpm as 160 to 200 Pa. The production method according to claim 1, which is s. 少なくとも一層目と二層目の電極を形成する際に同じメッシュの製版を使用することを特徴とする請求項1乃至3のいずれか1項記載の製造方法。   The manufacturing method according to any one of claims 1 to 3, wherein the same mesh plate making is used when forming at least the first layer electrode and the second layer electrode. 請求項1乃至4のいずれか1項記載の製造方法によって得られる太陽電池素子。   The solar cell element obtained by the manufacturing method of any one of Claims 1 thru | or 4.
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