JP2011058072A - Substrate treatment device and method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate treatment device and a method for manufacturing a semiconductor device where, even if the strength of a magnetic field formed in the vicinity of a treatment face is changed, a uniform magnetic field can be formed in the vicinity of the treatment face, and the magnetic anisotropy of a magnetic thin film deposited on a substrate is satisfactorily uniformized. <P>SOLUTION: The substrate treatment device is provided with: a treatment chamber treating a substrate; a substrate supporting part supporting the substrate at the inside of the treatment chamber; a film deposition mechanism film-depositing a magnetic thin film on the treatment face of the substrate supported to the substrate supporting part; a pair of magnetic parts arranged so as to be confronted each other in such a manner that the treatment face is held from the side to the treatment face of the substrate supported by the substrate supporting part; and a gas exhaust part exhausting the gas atmosphere in the treatment chamber. The magnetic part is formed in such a manner that a plurality of magnetic bodies are respectively arranged, and the arrangement intervals of the magnetic bodies holding the central part of the substrate are set so as to be wider than the arrangement intervals of the magnetic bodies holding the outer edge part of the substrate. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus for processing a substrate and a method for manufacturing a semiconductor device.

  As a process of manufacturing a semiconductor device such as a magnetoresistive element memory (MRAM), a substrate processing process for forming a magnetic thin film such as a CoFeB film on the substrate has been performed. A conventional substrate processing apparatus for performing such a process includes a processing chamber for processing a substrate, a substrate support for supporting the substrate in the processing chamber, and a magnetic thin film on the processing surface of the substrate supported by the substrate support. A film forming mechanism, a magnetic part disposed so as to sandwich the processing surface from the side with respect to the processing surface of the substrate supported by the substrate support, and a gas in the processing chamber And a gas exhaust part for exhausting the atmosphere.

  When forming the magnetic thin film on the processing surface of the substrate, the particles constituting the magnetic thin film are irradiated from the film forming mechanism toward the processing surface of the substrate. At this time, a uniform magnetic field is formed in the vicinity of the processing surface of the substrate by the magnetic unit. Particles irradiated from the film forming mechanism toward the processing surface of the substrate are affected by a uniform magnetic field formed in the vicinity of the processing surface. As a result, the magnetic pole direction of the magnetic domain (crystal aggregate having magnetic force) of the magnetic thin film can be made uniform, and the magnetic anisotropy of the magnetic thin film can be made uniform (for example, Patent Documents 1 and 2).

Japanese Patent Laid-Open No. 10-163058 JP-A 63-302612

  In the substrate processing step described above, for example, the type of magnetic thin film formed on the substrate may be changed in order to change the specifications or improve the characteristics of the magnetoresistive element memory. In that case, the strength of the magnetic field formed in the vicinity of the processing surface may be changed according to the type of magnetic thin film to be formed.

  However, in the above-described substrate processing apparatus, if the strength of the magnetic field formed near the processing surface is changed, the uniformity of the magnetic field may be reduced. As a result, it may be difficult to align the magnetic anisotropy of the magnetic thin film formed on the substrate.

  The present invention can form a uniform magnetic field in the vicinity of the processing surface even if the intensity of the magnetic field formed in the vicinity of the processing surface is changed, and the magnetic anisotropy of the magnetic thin film formed on the substrate is improved. It is an object of the present invention to provide a substrate processing apparatus and a semiconductor device manufacturing method that can be aligned.

  According to one aspect of the present invention, a processing chamber for processing a substrate, a substrate support for supporting the substrate in the processing chamber, and a magnetic thin film formed on the processing surface of the substrate supported by the substrate support A film forming mechanism, a pair of magnetic units disposed opposite to each other so as to sandwich the processing surface from the side with respect to the processing surface of the substrate supported by the substrate support unit, A gas exhaust part for exhausting a gas atmosphere, wherein the magnetic part is formed by arranging a plurality of magnetic bodies, and an arrangement interval of the magnetic bodies sandwiching the center part of the substrate sandwiches an outer edge part of the substrate There is provided a substrate processing apparatus which is set to be larger than the arrangement interval of the magnetic bodies.

  According to another aspect of the present invention, the substrate loaded into the processing chamber is supported by the substrate support portion, and the processing surface is sandwiched from the side with respect to the processing surface of the substrate supported by the substrate support portion. A pair of magnetic parts arranged opposite to each other, wherein the magnetic part is formed by arranging a plurality of magnetic bodies, and the arrangement interval of the magnetic bodies sandwiching the central part of the substrate is A plurality of the magnetic bodies are arranged so as to be set larger than the arrangement interval of the magnetic bodies sandwiching the outer edge portion, and in a state where a magnetic field is formed at least near the processing surface of the substrate between the magnetic bodies, There is provided a method of manufacturing a semiconductor device, including a step of forming a magnetic thin film on the processing surface of the substrate by a film forming mechanism while exhausting a gas atmosphere in the processing chamber from a gas exhaust unit.

  According to the substrate processing apparatus and the semiconductor device manufacturing method of the present invention, a uniform magnetic field can be formed in the vicinity of the processing surface even if the intensity of the magnetic field formed in the vicinity of the processing surface is changed. It is possible to satisfactorily align the magnetic anisotropy of the magnetic thin film to be formed.

1 is a schematic configuration diagram of a substrate processing apparatus according to a first embodiment of the present invention. It is side surface sectional drawing of the substrate processing apparatus of FIG. It is sectional drawing of the 1st processing furnace which concerns on the 1st Embodiment of this invention. It is sectional drawing which looked at the 1st processing furnace concerning the 1st Embodiment of this invention from the A direction of FIG. It is sectional drawing which looked at the 1st processing furnace concerning the 1st Embodiment of this invention from the B direction of FIG. (A) is a top view of the target holding mechanism which concerns on the 1st Embodiment of this invention, (b) is sectional drawing of the target holding mechanism shown to Fig.6 (a). It is a top view of the various electrodes with which the ion supply part for milling which concerns on the 1st Embodiment of this invention, and the ion supply part for sputtering are equipped. It is the schematic which shows the mode of the ion milling process which concerns on the 1st Embodiment of this invention. It is the schematic which shows the mode of the magnetic thin film formation process which concerns on the 1st Embodiment of this invention. It is a top view of a magnetic part and a wafer concerning a 1st embodiment of the present invention. It is sectional drawing of the magnetic part and wafer which concern on the 1st Embodiment of this invention. It is explanatory drawing of the arrangement | sequence of the small piece magnet which comprises the magnetic part which concerns on the 1st Embodiment of this invention. It is an example of analysis of intensity distribution in the plane direction of the magnetic field formed near the processing surface of the wafer by the magnetic unit according to the first embodiment of the present invention. It is an example of analysis of intensity distribution in the perpendicular direction of the magnetic field formed near the processing surface of the wafer by the magnetic unit according to the first embodiment of the present invention. It is a graph which shows the distance dependence from the wafer center of the magnetic field deflection angle formed in the processing surface vicinity of a wafer by the magnetic part which concerns on the 1st Embodiment of this invention. It is a top view of the conventional magnetic part formed as a long magnet, and a wafer. It is an example of analysis of intensity distribution in a plane direction of a magnetic field formed in the vicinity of a processing surface of a wafer by a conventional magnetic part formed as a long magnet. (A) is the schematic which illustrates the magnetic pole direction of each magnetic domain in the magnetic thin film formed without forming a magnetic field near the processing surface of a wafer, (b) is a uniform magnetic field near the processing surface of a wafer. It is the schematic which illustrates the magnetic pole direction of each magnetic domain in the magnetic thin film formed into a film while forming. It is a top view of a magnetic part and a wafer concerning a 2nd embodiment of the present invention. It is sectional drawing of the magnetic part and wafer which concern on the 2nd Embodiment of this invention. It is a top view of the magnetic part and wafer which concern on the 3rd Embodiment of this invention. It is a top view of a magnetic part and a wafer concerning a 4th embodiment of the present invention. It is the elements on larger scale of the magnetic part which concerns on the 5th Embodiment of this invention.

<First Embodiment of the Present Invention>
(1) Configuration of Substrate Processing Apparatus First, a schematic configuration example of a substrate processing apparatus according to a first embodiment of the present invention will be described with reference to FIGS. In a substrate processing apparatus to which the present invention is applied, a FOUP (Front Opening Unified Pod, hereinafter referred to as a pod) is used as a carrier for transporting a wafer 1 as a substrate. In the following description, front, rear, left and right are based on FIG. That is, with respect to the paper surface shown in FIG. 1, the front is below the paper surface, the back is above the paper surface, and the left and right are the left and right of the paper surface.

(First transfer chamber)
As shown in FIGS. 1 and 2, the substrate processing apparatus includes a first transfer chamber 12. The first transfer chamber 12 has a load lock chamber structure that can withstand a pressure (negative pressure) less than atmospheric pressure such as a vacuum state. The casing 11 of the first transfer chamber 12 is formed in a box shape in which the plan view is hexagonal and the upper and lower ends are closed. A first substrate transfer machine 13 for transferring the wafer 1 under a negative pressure is installed in the first transfer chamber 12. The first substrate transfer machine 13 is configured to be lifted and lowered by the elevator 14 while maintaining the airtightness in the first transfer chamber 12.

(Spare room)
The two side walls located on the front side of the six side walls of the housing 11 are connected to the carry-in spare chamber 15 and the carry-out spare chamber 16 via gate valves 17 and 18, respectively. . The spare chamber 15 and the spare chamber 16 are each configured to have a load lock chamber structure that can withstand negative pressure. Further, a loading substrate table 19 is installed in the preliminary chamber 15. In addition, the spare chamber 16 is provided with a substrate table 20 for carrying out.

(Second transfer chamber)
A second transfer chamber 22 used at substantially atmospheric pressure is connected to the front sides of the reserve chamber 15 and the reserve chamber 16 via gate valves 23 and 24. A second substrate transfer machine 25 for transferring the wafer 1 is installed in the second transfer chamber 22. The second substrate transfer machine 25 is configured to be moved up and down by an elevator 26 installed in the second transfer chamber 22 and is configured to be reciprocated in the left-right direction by a linear actuator 27. Yes.

  A notch or orientation flat aligning device 28 is installed on the left side of the second transfer chamber 22 (see FIG. 1). A clean unit 29 for supplying clean air is installed above the second transfer chamber 22 (see FIG. 2).

  On the front side of the housing 21 of the second transfer chamber 22, a wafer loading / unloading port 30 for loading / unloading the wafer 1 into / from the second transfer chamber 22 and a pod opener 31 are installed. An IO stage 32 is installed on the opposite side of the pod opener 31 across the wafer loading / unloading port 30, that is, on the outside of the housing 21. The pod opener 31 includes a closure 31a capable of opening and closing the cap 2a of the pod 2 and closing the wafer loading / unloading port 30, and a drive mechanism 31b for driving the closure 31a. The pod opener 31 opens and closes the cap 2 a of the pod 2 placed on the IO stage 32, thereby enabling the wafer 1 to be taken in and out of the pod 2. The pod 2 is carried in (supplied) and carried out (discharged) with respect to the IO stage 32 by an in-process transfer device (RGV) (not shown).

(Processing furnace and cooling unit)
As shown in FIG. 1, a first processing furnace 33 for performing a desired process on the wafer 1 is provided on two side walls located on the rear side (back side) of the six side walls of the housing 11. And the second processing furnace 34 are connected to each other through gate valves 35 and 36, respectively. Each of the first processing furnace 33 and the second processing furnace 34 is configured as a hot wall type processing furnace. In the present embodiment, the first processing furnace 33 and the second processing furnace 34 are configured as a sputtering film forming apparatus as will be described later.

  A first cooling unit 37 as a cooling chamber and a second cooling unit 38 are connected to the remaining two opposite side walls of the six side walls of the housing 11. . Both the first cooling unit 37 and the second cooling unit 38 are configured to cool the processed wafer 1.

  The substrate processing apparatus includes a first transfer chamber 12, a second transfer chamber 22, spare chambers 15 and 16, a first processing furnace 33, a second processing furnace 34, a first cooling unit 37, A controller 240 is provided as a control unit that controls all the operations of the second cooling unit 38.

(2) Configuration of Processing Furnace Next, the configuration of the first processing furnace 33 and the second processing furnace 34 configured as a sputtering film forming apparatus will be described with reference to FIGS. 3, 4, and 5. Since the first processing furnace 33 and the second processing furnace 34 have substantially the same configuration, the following description will be given by taking the first processing furnace 33 as an example.

  FIG. 3 is a cross-sectional view of the first processing furnace 33 according to the present embodiment as viewed from the housing 11 side. 4 is a cross-sectional view of the first processing furnace 33 according to the present embodiment as viewed from the direction A (lower side) of FIG. FIG. 5 is a cross-sectional view of the first processing furnace 33 according to the present embodiment as viewed from the direction B (side) of FIG.

  As shown in FIGS. 3, 4, and 5, the first processing furnace 33 supports the wafer 1 in the sputtering film forming chamber 42 as a processing chamber for processing the wafer 1 and the sputtering film forming chamber 42. A substrate support unit 50, a film forming mechanism for forming a magnetic thin film on the processing surface of the wafer 1 supported by the substrate support unit 50, and a processing surface of the wafer 1 supported by the substrate support unit 50 are processed. A pair of magnetic parts, which will be described later, are arranged so as to face each other so that the surface is sandwiched from the side, and a gas exhaust part, which will be described later, that exhausts the gas atmosphere in the sputtering film forming chamber 42. Yes.

(Sputtering deposition chamber)
A sputtering film forming chamber 42 as a processing chamber is formed in the vacuum container 41. The vacuum vessel 41 is configured in a rectangular parallelepiped housing shape. The vacuum vessel 41 is connected adjacent to the back wall of the housing 11. A loading / unloading port 43 for loading / unloading the wafer 1 into / from the sputtering film forming chamber 42 is provided on a side wall (hereinafter referred to as a front wall) adjacent to the housing 11 of the vacuum container 41. The carry-in / out port 43 is configured to be opened and closed by a gate valve 35 (see FIGS. 1 and 2). The wafer 1 is transferred into and out of the sputtering film forming chamber 42 by the first substrate transfer machine 13 shown in FIG. 1 as described above. The wafer 1 can be transferred between the first transfer chamber 12 and the sputtering film forming chamber 42 by opening the gate valve 35. Further, by closing the gate valve 35, the inside of the sputtering film forming chamber 42 can be kept airtight, and the inside of the sputtering film forming chamber 42 can be evacuated.

A rotation mechanism 44 is installed on the upper portion of the side wall of the vacuum vessel 41 (the upper left portion in FIG. 3).
The rotation mechanism 44 is configured by a servo motor or the like. The rotating shaft 45 of the rotating mechanism 44 is inserted horizontally into the sputtering film forming chamber 42 so as to extend in the left-right direction and is rotatably supported. A target holding mechanism 46 is disposed at the end of the rotating shaft 45. 6A is a plan view of the target holding mechanism 46 according to this embodiment (viewed from the lower side of FIG. 3), and FIG. 6B is a cross-sectional view of the target holding mechanism 46. FIG. As shown in FIG. 6, the target holding mechanism 46 is formed in, for example, an octagonal frustum shape. Each side surface (eight side surfaces) of the target holding mechanism 46 formed in an octagonal frustum shape is configured to hold the first target 47A to the eighth target 47H as sputtering targets, respectively. By rotating the target holding mechanism 46 by the rotation mechanism 44, an ion gas (sputtering gas) supplied from a sputtering ion supply unit 80 to be described later is selected from the first target 47A to the eighth target 47H. It is configured to be able to irradiate one target. The target holding mechanism 46 is not limited to being formed in an octagonal frustum shape, and may be configured in other polygonal frustum shapes, and is configured as a plate member that holds the target on the front and back sides. Also good.

  The materials of the first target 47A to the eighth target 47H can be different metals, insulating materials such as magnesium oxide (MgO), and the like, and are appropriately changed according to the type of thin film formed on the wafer 1. . For example, when a magnetic thin film made of CoFeB (cobalt, iron, boron) is formed on a wafer 1 as a substrate, a CoFeB alloy can be used as a target material. When a magnetic thin film made of PtFeP (platinum, iron, phosphorus) is formed on the wafer 1, a PtFeP alloy can be used as a target material. Depending on the type of the magnetic thin film, a quaternary or quaternary alloy obtained by further mixing Cu, Ni or the like with the above ternary alloy may be used as a target material. Moreover, you may use single-piece | units, such as Fe, Cu, and Ni, as a material of a sputtering target. In addition, a sputtering target is formed on a member made of, for example, Co or Pt, and at least one chip of an alloy chip such as an FeP alloy chip, an FeCu alloy chip, an FeNi alloy chip, an FeCuP alloy chip, and an FeNiP alloy chip has a predetermined composition. You may comprise as a composite target mounted so that it may become a ratio.

(Substrate support part)
A substrate support 50 is provided below the sputtering film forming chamber 42. On the upper surface (holding surface) of the substrate support 50, a wafer 1 made of Si is placed in a horizontal position as a substrate on which a magnetic thin film is formed. In addition to the Si wafer substrate, for example, a quartz glass substrate, a crystallized glass substrate, a magnesium oxide (MgO) substrate, or the like may be used as the substrate on which the magnetic thin film is formed. The upper surface of the wafer 1 placed on the substrate support unit 50 (the processing surface on which the magnetic thin film is formed) is one selected from the first target 47A to the eighth target 47H of the target holding mechanism 46. It is arranged to face one target.

  The substrate support unit 50 is configured to be rotatable by a rotation mechanism 51. The rotation mechanism 51 is placed in a horizontal posture (a posture in which the processing surface of the wafer 1 faces the target holding mechanism 46) by the tilt mechanism 52, or a vertical posture (a milling ion supply unit in which the processing surface of the wafer 1 is described later). 60). 3 to 5 show a state where the rotation mechanism 51 is in a horizontal posture. The rotation mechanism 51 and the tilt mechanism 52 are configured by, for example, a servo motor. In the present embodiment, a pair of magnetic units are provided on the substrate support unit 50 so as to form a uniform magnetic field near the processing surface of the wafer 1. The detailed configuration of the magnetic unit will be described later.

(Ion supply for milling)
A milling ion supply unit 60 is installed in the lower portion of the side wall of the vacuum vessel 41 (lower right portion in FIG. 3). The milling ion supply unit 60 is configured to remove a natural oxide film or contaminants on the surface of the wafer 1 (ion milling) by irradiating the opposite wafer 1 with ions.

  As shown in FIGS. 3 to 5, the milling ion supply unit 60 includes an ion source chamber 62. The ion source chamber 62 is formed in the housing 61. The casing 61 is formed in a cylindrical shape with one end (the side opposite to the side connected to the vacuum vessel 41) closed. An ion irradiation port 63 is provided in the lower portion of the side wall of the vacuum vessel 41 (connection portion with the housing 61). The opening of the casing 61 of the milling ion supply unit 60 is aligned with the ion irradiation port 63. A gas introduction pipe 64 for introducing (supplying) Ar gas as an ion source for milling into the ion source chamber 62 is connected to the closed wall of the casing 61. A magnet 65 is installed on the outer periphery of the casing 61 of the ion supply unit 60 for milling. The magnet 65 is configured to generate a cusp magnetic field that confines plasma in the housing 61.

  A filament 66 is installed on the blocking wall in the casing 61 (the end opposite to the ion irradiation port 63). A filament power supply (DC power supply) 67 that supplies power to the filament 66 is connected to the filament 66. The cathode of the filament power supply 67 is connected to the cathode of an arc power supply (DC power supply) 68 that forms plasma in the ion source chamber 62. A ground electrode 70, a deceleration electrode 72, and an acceleration electrode 75 are installed in this order from the ion irradiation port 63 side at the end of the housing 61 on the ion irradiation port 63 side. The ground electrode 70 is connected to the ground. The deceleration electrode 72 is connected to the cathode of a deceleration power source (DC power source) 71. The anode of the deceleration power supply 71 is connected to the ground. The acceleration electrode 75 is connected to the anode of an acceleration power source (DC power source) 74 through a resistor 73. The casing 61 and the anode of the arc power supply 68 are also connected to the anode of the acceleration power supply 74. The cathode of the acceleration power source 74 is connected to ground.

  The ground electrode 70, the deceleration electrode 72, and the acceleration electrode 75 are formed in a circular flat plate shape. FIG. 7 shows the acceleration electrode 75 as a representative. Each of the ground electrode 70, the deceleration electrode 72, and the acceleration electrode 75 (hereinafter also referred to as each electrode) is formed with a large number of transmission apertures 76 that transmit ion beams formed as circular small holes. The aperture ratio (opening area / overall area) of the transmission port 76 group in each electrode is set to be uniform as a whole. For example, the transmission ports 76 having the same diameter are uniformly distributed over the entire surface. A shutter mechanism 77 that opens and closes the ion irradiation port 63 is installed in front of the ion irradiation port 63 of the ion supply unit 60 for milling. The filament power supply 67, the arc power supply 68, the deceleration power supply 71, the acceleration power supply 74, and the shutter mechanism 77 are controlled by the controller 240.

(Sputtering ion supply unit)
A sputtering ion supply unit 80 is installed on the upper side wall of the vacuum vessel 41 (upper left side in FIG. 3). The ion supply unit for sputtering 80 knocks out particles from the selected target by irradiating one selected target among the first target 47A to the eighth target 47H with ion gas (sputtering ions). Are supplied to the processing surface of the wafer 1 and a thin film is formed on the processing surface of the wafer 1.

As shown in FIGS. 3 to 5, the sputtering ion supply unit 80 includes an ion source chamber 82. The ion source chamber 82 is formed in the housing 81. The casing 81 is formed in a cylindrical shape whose one end (the side opposite to the side connected to the vacuum vessel 41) is closed. An ion irradiation port 83 is provided in the upper portion of the side wall of the vacuum vessel 41 (connection portion with the housing 81). The opening of the casing 81 of the ion supply unit 80 for sputtering is aligned with the ion irradiation port 83. A gas introduction tube 84 for introducing Ar gas as an ion source for sputtering into the ion source chamber 82 is connected to the closed wall of the casing 81. A magnet 85 is installed on the outer periphery of the casing 81 of the ion supply unit 80 for sputtering. The magnet 85 is configured to generate a cusp magnetic field that confines plasma in the housing 81.

  A filament 86 is installed on the closed wall in the casing 81 (the end opposite to the ion irradiation port 83). A filament power source (DC power source) 87 that supplies power to the filament 86 is connected to the filament 86. The cathode of the filament power supply 87 is connected to the cathode of an arc power supply (DC power supply) 88 that forms plasma in the ion source chamber 82. A ground electrode 90, a deceleration electrode 92, and an acceleration electrode 95 are installed in this order from the ion irradiation port 83 side at the end of the housing 81 on the ion irradiation port 83 side. The ground electrode 90 is connected to the ground. The deceleration electrode 92 is connected to the cathode of a deceleration power source (DC power source) 91. The anode of the deceleration power supply 91 is connected to the ground. The acceleration electrode 95 is connected to the anode of an acceleration power source (DC power source) 94 through a resistor 93. The casing 81 and the anode of the arc power supply 88 are also connected to the anode of the acceleration power supply 94. The cathode of the acceleration power supply 94 is connected to the ground.

  The ground electrode 90, the deceleration electrode 92, and the acceleration electrode 95 are formed in a circular flat plate shape as in the case of the milling ion supply unit 60. FIG. 7 shows the acceleration electrode 95 as a representative. Each of the ground electrode 90, the deceleration electrode 92, and the acceleration electrode 95 (hereinafter also referred to as each electrode) is formed with a large number of transmission apertures 96 that transmit ion beams formed as circular small holes. The aperture ratio (opening area / overall area) of the transmission port 96 group in each electrode is set to be uniform as a whole. For example, the transmission ports 96 having the same diameter are uniformly distributed over the entire surface. The filament power supply 87, the arc power supply 88, the deceleration power supply 91, and the acceleration power supply 94 are controlled by the controller 240.

  The film forming mechanism according to this embodiment is mainly configured by the sputtering ion supply unit 80 and the target holding mechanism 46.

(Gas exhaust part)
An exhaust port 53 is formed in the lower portion of the side wall of the vacuum vessel 41 (lower left portion in FIG. 3). A pipe 54 is connected to the exhaust port 53. An exhaust pump 55 is connected to the pipe 54. The exhaust port 53 is disposed at a position where the ions supplied from the ion irradiation port 63 are not directly irradiated. That is, the exhaust port 53 is shifted and disposed at a position not facing the ion irradiation port 63 so that the ions from the milling ion supply unit 60 are not directly irradiated. Thus, by setting the exhaust port 53 below the sputtering ion supply unit 80, the dead space formed below the sputtering ion supply unit 80 can be used effectively. Further, by installing the exhaust port 53 at a position that does not face the ion irradiation port 63, deterioration of the inner wall of the pipe 54 and the exhaust pump 55 due to direct ion irradiation can be suppressed. The gas exhaust part according to the present embodiment is mainly configured by the exhaust port 53, the pipe 54, and the exhaust pump 55.

(Magnetic part)
Next, a detailed configuration of the magnetic unit according to the present embodiment will be described with reference to FIGS. 10, 11, and 12. FIG. 10 is a plan view of the magnetic unit 100 and the wafer 1 according to this embodiment. FIG. 11 is a cross-sectional view of the magnetic unit 100 and the wafer 1 according to the present embodiment. FIG. 12 is an explanatory diagram of the arrangement of the small magnets 101 constituting the magnetic unit 100 according to the present embodiment. As shown in FIGS. 10 and 11, the substrate support portion 50 includes a connection base 8 connected to the rotation mechanism 51, a substrate holding portion 4 provided on the connection base 8 and holding the wafer 1, and the connection base 8. And a magnetic yoke 3 provided in an annular shape so as to surround the outer periphery. The substrate holding unit 4 is configured as a chuck mechanism such as a vacuum chuck or an electrostatic chuck that positions the wafer 1 in the circumferential direction as a positioning mechanism. A magnetic unit 100 is configured to be attached to the magnetic yoke 3. The magnetic units 100 attached to the magnetic yoke 3 are configured to be opposed to each other so as to sandwich the processing surface from the side with respect to the processing surface of the wafer 1 supported by the substrate support unit 50. . The magnetic unit 100 includes a magnet case 100a configured to be vacuum-sealable, and small piece magnets 101 as a plurality of magnetic bodies provided in the magnet case 100a.

  The pair of magnet cases 100a are arranged in parallel to each other. The magnet case 100 a is arranged at a predetermined distance from the outer edge of the wafer 1. The magnet case 100 a is installed in a direction parallel to the tangent line of the wafer 1. The magnet case 100a is formed in a longitudinal shape. The magnetic case 100 a extends longer in the longitudinal direction than the diameter of the wafer 1. The magnet case 100a is configured by a vacuum sealable box. The magnetic case 100a is configured to accommodate a plurality of small magnets 101, and can be hermetically sealed by closing an openable / closable lid (not shown).

The plurality of small magnets 101 are arranged along the longitudinal direction of the magnet case 100a. That is, the plurality of small piece magnets 101 are arranged in a direction parallel to the tangent to the wafer 1. The plurality of small piece magnets 101 are formed in the same shape and the same size. A spacer 102 as a non-magnetic material is provided between the adjacent small magnets 101. The spacers 102 and the small magnets 101 are arranged alternately. The arrangement interval of the small magnets 101 that sandwich the center portion of the wafer 1 is set larger than the arrangement interval of the small magnets 101 that sandwich the outer edge portion of the wafer 1. In other words, the small piece magnets 101 are arranged so that the interval between adjacent ones from the center side of the wafer 1 toward the outer edge side of the wafer 1 becomes small. The arrangement interval of the spacers 102 that sandwich the center portion of the wafer 1 is set to be smaller than the arrangement interval of the spacers 102 that sandwich the outer edge portion of the wafer 1.
The plurality of small magnets 101 are arranged longer in the longitudinal direction than the diameter of the wafer 1. The number of small magnets 101 arranged within the diameter range of the wafer 1 per unit length is smaller than the number of small magnets 101 arranged outside the diameter range of the wafer 1 per unit length. It has become.
For example, when the interval between the small magnets 101 is L1, L2, L3, L4, L5, and L6 in order from the outer edge of the wafer 1 toward the center of the wafer 1, L1 <L2 <L3 <L4 <L5 <L6. Each small magnet 101 is arranged so as to satisfy (see FIG. 12).

  Thereby, the magnetic flux density of the magnetic field formed by the small magnets 101 arranged outside the diameter range of the wafer 1 is made smaller than the magnetic flux density of the magnetic field formed by the small magnets 101 arranged within the diameter range of the wafer 1. It has become. The small magnet 101 is arranged so that the inclination angle (horizontal inclination angle) of the magnetic field lines of the magnetic field formed in the vicinity of the processing surface of the wafer 1 is within 3%. Therefore, the magnetic field lines of the magnetic field formed in the vicinity of the processing surface of the wafer 1 are parallel to each other from the vicinity of the center portion of the wafer 1 to the outer edge portion, thereby making the magnetic field formed in the vicinity of the processing surface of the wafer 1 uniform. . Further, the magnetic field lines of the magnetic field formed in the vicinity of the processing surface of the wafer 1 are parallel to the processing surface of the wafer 1, so that the magnetic field formed in the vicinity of the processing surface of the wafer 1 becomes uniform. Thereby, the magnetic anisotropy of the magnetic thin film formed on the wafer 1 can be satisfactorily aligned, and the device performance of a magnetoresistive element memory using the magnetic thin film can be improved.

In addition, by using the spacer 102, the assemblability of the magnetic unit 100 is improved, and fine adjustment of the arrangement of the small magnets 101 is facilitated. Further, the number of small magnets 101 can be changed according to the strength of the magnetic field formed near the processing surface of the wafer 1.
By changing the combination of the spacer 102 shape, magnet shape, and magnet characteristics, the magnetic field region formed in the vicinity of the processing surface of the wafer 1 can be changed. Examples of the magnet used for the small piece magnet 101 include rare earth magnets such as neodymium magnets and samarium cobalt magnets, ferrite magnets, iron / chromium / cobalt magnets, platinum magnets, and alnico (Al, Ni, Co) magnets. The magnet is not limited to a permanent magnet, and may be an electromagnet using a coil, for example.
The magnetic yoke 3 is made of a soft magnetic material such as iron (Fe) or silicon steel having a small coercive force and a large magnetic permeability. The spacer 102 is made of, for example, nonmagnetic SUS, quartz (SiO ₂ ), alumina (Al ₂ O ₃ ), or the like. A partition wall may be provided in the magnet case 100a instead of the spacer 102.

  As described above, the magnet case 100 a in which the small piece magnet 101 and the spacer 102 are housed is attached to each of the left and right sides of the magnetic yoke 3. The magnetic yoke 3 is connected to the substrate holder 4 and the rotation mechanism 51 by the connection base 8. As a result, when the wafer 1 is placed and held on the substrate support unit 50, the magnetic units 100 are arranged to face each other so as to sandwich the processing surface from the side with respect to the processing surface of the wafer 1. ing. When the magnetic thin film is formed on the processing surface of the wafer 1, the magnetic unit 100 can be rotated integrally with the wafer 1 by the rotation mechanism 51. Accordingly, it is possible to satisfactorily align the magnetic anisotropy of the magnetic thin film to be formed while maintaining the formation of a uniform magnetic field in the vicinity of the processing surface of the wafer 1, and the in-plane film thickness uniformity of the magnetic thin film Can be improved.

(3) Operation of Substrate Processing Apparatus First, a series of processes for processing the wafer 1 in the substrate processing apparatus will be described with reference to FIGS. In the following description, the operation of each part constituting the substrate processing apparatus is entirely controlled by the controller 240.

  A pod 2 containing, for example, 25 unprocessed wafers 1 is transferred to a substrate processing apparatus by an in-process transfer apparatus (not shown). As shown in FIGS. 1 and 2, the pod 2 is delivered from the in-process transfer device and placed on the IO stage 32. The cap 2a of the pod 2 is removed by the pod opener 31, and the wafer loading / unloading port of the pod 2 is opened.

  When the pod 2 is opened by the pod opener 31, the second substrate transfer machine 25 picks up the wafer 1 from the pod 2 and loads it into the preliminary chamber 15, and transfers the wafer 1 onto the wafer table 19. During the transfer operation, the gate valve 17 on the first transfer chamber 12 side of the preliminary chamber 15 is closed, and the negative pressure in the first transfer chamber 12 is maintained. When the transfer of a predetermined number of, for example, 25 wafers 1 stored in the pod 2 onto the wafer table 19 is completed, the gate valve 23 is closed and the inside of the preliminary chamber 15 is negatively pressured by an exhaust device (not shown). Exhaust.

When the pressure in the preliminary chamber 15 reaches a preset pressure value, the gate valve 17 is opened to connect the preliminary chamber 15 and the first transfer chamber 12. Subsequently, the first substrate transfer device 13 in the first transfer chamber 12 picks up the wafer 1 from the wafer table 19 and loads it into the first transfer chamber 12. After closing the gate valve 17, the gate valve 35 is opened to allow the first transfer chamber 12 and the first processing furnace 33 to communicate with each other.
Subsequently, the first substrate transfer machine 13 carries the wafer 1 from the first transfer chamber 12 into the first processing furnace 33 and transfers it onto the support in the first processing furnace 33. After the gate valve 35 is closed, a substrate processing step including a magnetic thin film forming step is performed in the first processing furnace 33 as will be described later.

  When the substrate processing step is completed in the first processing furnace 33, the gate valve 35 is opened, and the first substrate transfer machine 13 has processed the wafer into the first transfer chamber 12 from the first processing furnace 33. Unload 1 After unloading the wafer 1 from the first processing furnace 33, the gate valve 35 is closed.

  The wafer 1 unloaded from the first processing furnace 33 by the first substrate transfer machine 13 is loaded into the first cooling unit 37, and the processed wafer 1 is cooled.

  While the processed wafer 1 is cooled, the wafer 1 prepared in advance on the wafer table 19 in the preliminary chamber 15 is carried into the first processing furnace 33 by the first substrate transfer device 13. To do. After the gate valve 35 of the first processing furnace 33 is closed, a substrate processing process including a magnetic thin film forming process is performed in the first processing furnace 33 as described later.

  When a preset cooling time has elapsed in the first cooling unit 37, the cooled wafer 1 is unloaded from the first cooling unit 37 into the first transfer chamber 12 by the first substrate transfer device 13. .

  After the cooled wafer 1 is carried out from the first cooling unit 37 into the first transfer chamber 12, the gate valve 18 is opened. Then, the wafer 1 unloaded from the first cooling unit 37 is transferred into the preliminary chamber 16 and transferred onto the wafer table 20, and then the preliminary chamber 16 is closed by the gate valve 18.

  By repeating the above operation, a predetermined number of, for example, 25 wafers 1 loaded into the preliminary chamber 15 are sequentially processed.

  The processing for all the wafers 1 loaded into the spare chamber 15 is finished, all the processed wafers 1 are stored in the spare chamber 16, and the spare chamber 16 is closed by the gate valve 18. Then, an inert gas is supplied into the preliminary chamber 16 to make it approximately atmospheric pressure. When the inside of the preliminary chamber 16 is brought to substantially atmospheric pressure, the gate valve 24 is opened, and the cap 2 a of the empty pod 2 placed on the IO stage 32 is opened by the pod opener 31. Subsequently, the second substrate transfer machine 25 in the second transfer chamber 22 picks up the wafer 1 from the wafer table 20 and carries it out into the second transfer chamber 22. Are stored in the pod 2 through the wafer loading / unloading port 30.

  When the storage of the 25 processed wafers 1 into the pod 2 is completed, the cap 2a of the pod 2 is closed by the pod opener 31. Then, the closed pod 2 is transferred from the IO stage 32 to the next process by the in-process transfer apparatus.

  The above operation has been described by taking the case where the first processing furnace 33 and the first cooling unit 37 are used as an example, but the same applies to the case where the second processing furnace 34 and the second cooling unit 38 are used. Perform the operation. In the above-described continuous processing apparatus, one spare chamber 15 is used for carrying in and the other spare chamber 16 is used for carrying out. However, one spare chamber 16 may be used for carrying in, and the other spare chamber 15 may be used for carrying out. . The first processing furnace 33 and the second processing furnace 34 may perform the same process, or may perform different processes. In the case where different processing is performed in the first processing furnace 33 and the second processing furnace 34, for example, after the predetermined substrate processing is performed on the wafer 1 in the first processing furnace 33, the second processing is continued. Another substrate processing may be performed in the furnace 34. In the case where another substrate processing is not performed in the second processing furnace 34 after a predetermined substrate processing is performed on the wafer 1 in the first processing furnace 33, the first cooling unit 37 or the second cooling is performed. You may make it go through the unit 38. Further, it may be possible not to pass through the first cooling unit 37 or the second cooling unit 38 as necessary, for example, by performing no heat treatment in the processing in the first processing furnace 33 and the second processing furnace 34.

(4) Substrate Processing Step Next, a substrate processing step that is performed as one step of manufacturing a semiconductor device such as a magnetoresistive element memory will be described mainly with reference to FIGS. The substrate processing step is performed by the substrate processing apparatus according to the above configuration.

(Process for supporting wafer)
First, the wafer 1 is loaded from the loading / unloading port 43 into the sputtering film forming chamber 42 that has been previously depressurized to a predetermined pressure, and transferred onto the substrate holding unit 4 of the substrate support unit 50 in a horizontal posture. At this time, the substrate holding part 4 of the substrate support part 50 chucks and positions the wafer 1 (see FIG. 11).

  Subsequently, after the loading / unloading port 43 is closed by the gate valve 35 (see FIGS. 1 and 2), the inside of the sputtering film forming chamber 42 is evacuated by the exhaust pump 55, and the pressure in the sputtering film forming chamber 42 is reduced to, for example, 0. Reduce the pressure to 1 to 0.01 Pa.

(Ion milling process)
Subsequently, Ar gas is converted into plasma by the milling ion supply unit 60 to generate an Ar ion beam 78. Specifically, Ar gas is supplied from the gas introduction pipe 64 into the ion source chamber 62 of the milling ion supply unit 60 at a predetermined flow rate, for example, 10 sccm. Then, the filament power supply 67 is turned on, and thermoelectrons are emitted from the filament 66. Then, the arc power source 68 is turned on, electrons are moved in the ion source chamber 62 to collide with Ar atoms, and the Ar gas supplied into the ion source chamber 62 is turned into plasma. Then, the deceleration power supply 71 and the acceleration power supply 74 are turned on, the acceleration electrode 75 is set to a positive potential, and the deceleration electrode 72 is set to a negative potential. As a result, an ion beam 78 is generated by extracting Ar ions from the group of transmission openings 76 toward the sputtering chamber 42 by an electric field generated by the potential difference between the acceleration electrode 75, the deceleration electrode 72 and the ground electrode 70. At this time, the ion irradiation port 63 is closed by the shutter mechanism 77. The potential difference between the deceleration electrode 72 and the ground electrode 70 serves to prevent electrons in the sputtering chamber 42 from entering the ion source chamber 62.

  Then, as shown in FIG. 8, the substrate support unit 50 is brought into a vertical posture (a posture in which the processing surface of the wafer 1 faces toward the milling ion supply unit 60) by the tilt mechanism 52. Subsequently, the ion irradiation port 63 is opened by the shutter mechanism 77 while the substrate support unit 50 is rotated by the rotation mechanism 51. Then, an ion milling process is performed in which the wafer 1 is irradiated with the ion beam 78 from the milling ion supply unit 60 and the wafer 1 is ion milled. Ion milling refers to a processing method for cutting an object by irradiating the object (wafer) with an ion beam. The oxide film and contaminants on the surface of the wafer 1 are removed by this ion milling process. When a predetermined time (for example, 60 to 120 seconds) elapses, irradiation of the ion beam 78 by the milling ion supply unit 60 is stopped, and the ion milling process is ended.

(Process to form a magnetic thin film)
Subsequently, as shown in FIG. 9, while the rotation of the substrate support unit 50 by the rotation mechanism 51 is continued, the substrate support unit 50 is horizontally positioned by the tilt mechanism 52 (the processing surface of the wafer 1 faces the target holding mechanism 46 side). Posture).

  Further, the target holding mechanism 46 is rotated by a predetermined angle by the rotation mechanism 44, and a desired target selected in advance among the first targets 47 </ b> A to 47 </ b> H is made to face the processing surface of the wafer 1. In this step, for example, a target made of a CoFeB alloy is made to face the processing surface of the wafer 1.

  Ar gas is supplied from the gas introduction tube 84 into the ion source chamber 82 of the ion supply unit 80 for sputtering at a predetermined flow rate (for example, 2 to 20 sccm). Then, similarly to the case of the ion milling process, Ar gas is converted into plasma by the ion supply unit 80 for sputtering, and an Ar ion beam 97 is generated. Next, the target is irradiated with an Ar ion beam 97 from the sputtering ion supply unit 80. Then, particles 98 such as molecules constituting the CoFeB alloy jump out of the target. Then, the ejected particles 98 are irradiated onto the processing surface of the wafer 1 to be adsorbed (deposited), and a CoFeB magnetic thin film is formed on the processing surface of the wafer 1.

  Here, in the present embodiment, the magnetic unit 100 forms a uniform magnetic field over the entire surface of the wafer 1 in the vicinity of the processing surface of the wafer 1. That is, the magnetic force lines of the magnetic field formed in the vicinity of the processing surface of the wafer 1 by the magnetic unit 100 are parallel to each other from the vicinity of the center of the wafer 1 to the outer edge, and the magnetic field formed in the vicinity of the processing surface of the wafer 1 is uniform. It is trying to become. In addition, the magnetic field lines formed near the processing surface of the wafer 1 by the magnetic unit 100 are parallel to the processing surface of the wafer 1 so that the magnetic field formed near the processing surface of the wafer 1 is uniform. . For this reason, the particles 98 such as molecules constituting the CoFeB alloy are subjected to the action of the uniform magnetic field formed by the magnetic unit 100 and are deposited on the processing surface of the wafer 1 with the magnetic pole directions aligned.

  At this time, the force at which the particles 98 fly toward the processing surface of the wafer 1 (the force through which the particles 98 flow) is greater than the force (Lorentz force) that the particles 98 receive from the magnetic field formed near the processing surface of the wafer 1. Make it bigger. By doing so, the particles 98 are not hindered from reaching the processing surface of the wafer 1, and the influence of the film formation amount on the processing surface of the wafer 1 due to the magnetic field can be suppressed. When a predetermined time (for example, 30 to 180 seconds) elapses and a magnetic thin film having a desired film thickness is formed on the processing surface of the wafer 1, the supply of the ion beam 97 by the sputtering ion supply unit 80 is stopped, and the magnetic thin film forming step Exit.

(Process for forming an insulating thin film)
Subsequently, an MgO thin film is formed as an insulating thin film. The target holding mechanism 46 is rotated by a predetermined angle by the rotation mechanism 44, the target material is switched to the MgO alloy, and the MgO alloy is opposed to the processing surface of the wafer 1.
Then, similarly to the magnetic thin film forming step described above, the sputtering ion supply unit 80 is operated to form a MgO thin film on the CoFeB thin film formed on the processing surface of the wafer 1. When an insulating thin film having a desired thickness is formed on the processing surface of the wafer 1 after a predetermined time (for example, 300 to 500 seconds) has elapsed, the supply of the ion beam 97 by the sputtering ion supply unit 80 is stopped to form the insulating thin film. The process ends.

  Thereafter, when a CoFeB thin film, which is a magnetic thin film, is formed again, the target holding mechanism 46 is rotated by the rotation mechanism 44, the target material is switched to a CoFeB alloy, and the sputtering ion supply unit 80 is operated as described above. Then, a CoFeB thin film is formed on the processing surface (MgO thin film) of the wafer 1. Thereby, a three-layer structure of CoFeB / MgO / CoFeB used for the magnetoresistive element memory can be formed.

(Wafer unloading process)
When the CoFeB thin film and the MgO thin film are sequentially formed on the processing surface of the wafer 1, the substrate processing step is completed by unloading. Thereafter, the loading / unloading port 43 is opened by the gate valve 35 (see FIGS. 1 and 2), and the processed wafer 1 held on the substrate support unit 50 is unloaded from the loading / unloading port 43.

(5) Effects according to the present embodiment According to the present embodiment, the following one or more effects are achieved.

(A) According to the present embodiment, the set of magnetic units 100 are arranged opposite to each other so as to sandwich the processing surface from the side with respect to the processing surface of the wafer 1. The magnetic part 100 has a plurality of small magnets 101 arranged as a plurality of magnetic bodies in a magnet case 100a. The arrangement interval of the small magnets 101 sandwiching the center portion of the wafer 1 is set larger than the arrangement interval of the small magnets 101 sandwiching the outer edge portion of the wafer 1.

Thereby, the magnetic field lines of the magnetic field formed in the vicinity of the processing surface of the wafer 1 are parallel to each other from the vicinity of the center portion of the wafer 1 to the outer edge portion, and the magnetic field formed in the vicinity of the processing surface of the wafer 1 becomes uniform. Further, the magnetic field lines of the magnetic field formed near the processing surface of the wafer 1 are parallel to the processing surface of the wafer 1, and the magnetic field formed near the processing surface of the wafer 1 becomes uniform. Thereby, the magnetic anisotropy of the magnetic thin film formed on the wafer 1 can be satisfactorily aligned, and the device performance of a magnetoresistive element memory using the magnetic thin film can be improved.

  The relationship between the magnetic field formed near the processing surface of the wafer 1 and the magnetic anisotropy of the magnetic thin film will be described below. FIG. 18A is a schematic view illustrating the magnetic pole direction 321 of each magnetic domain 320 in the magnetic thin film formed without forming an external magnetic field in the vicinity of the processing surface of the wafer 1, and FIG. It is the schematic which illustrates the magnetic pole direction 321 of each magnetic domain 320 in the magnetic thin film formed into a film, forming a uniform external magnetic field in the vicinity of this processing surface. As shown in FIG. 18A, in the case of a magnetic thin film formed without forming an external magnetic field in the vicinity of the processing surface of the wafer 1, the magnetic pole direction 321 of each magnetic domain 320 is irregular. On the other hand, as shown in FIG. 18B, in the case of a magnetic thin film formed while forming a uniform external magnetic field in the vicinity of the processing surface of the wafer 1, the magnetic field direction of each magnetic domain 320 is affected by the external magnetic field. 321 is evenly aligned with the external magnetic field. Thus, by forming a uniform magnetic field in the vicinity of the processing surface of the wafer 1 during the magnetic thin film formation, the state of the magnetic pole direction of each magnetic domain in the magnetic thin film is made uniform, and the device characteristics of the magnetoresistive element memory are improved. Is possible.

  In addition, FIGS. 13 to 15 show analysis examples of the intensity distribution of the magnetic field formed near the processing surface of the wafer 1 when the magnetic unit 100 according to the present embodiment is used.

  FIG. 13 is an analysis example of the intensity distribution in the planar direction of the magnetic field formed in the vicinity of the processing surface of the wafer 1 by the magnetic unit 100 according to the present embodiment. FIG. 14 is an analysis example of the intensity distribution in the vertical direction of the magnetic field formed in the vicinity of the processing surface of the wafer 1 by the magnetic unit 100 according to the present embodiment. FIG. 15 is a graph showing the distance dependence from the center of the wafer 1 of the magnetic field deflection angle formed in the vicinity of the processing surface of the wafer 1 by the magnetic unit 100 according to this embodiment. Note that the analysis models shown in FIGS. 13 to 15 are analyzed in a half region of the actual machine for simplification.

  According to FIG. 13, when the magnetic unit 100 of the present embodiment is used, when the processing surface of the wafer 1 is viewed from above, the magnetic field lines formed near the processing surface of the wafer 1 are near the center of the wafer 1. It can be seen that the magnetic field is uniform over the entire processing surface of the wafer 1 in parallel with each other from the outer edge to the outer edge. Further, according to FIG. 14, when the magnetic unit 100 of this embodiment is used, when the processing surface of the wafer 1 is viewed from the side, the magnetic field lines of the magnetic field formed in the vicinity of the processing surface of the wafer 1 It can be seen that the magnetic field is uniform over the entire processing surface of the wafer 1 in parallel to the processing surface. Further, according to FIG. 15, when the magnetic unit 100 of the present embodiment is used, the gradient of the magnetic force lines 301 of the magnetic field formed in the vicinity of the processing surface of the wafer 1 is ± about 2 degrees or less, and the target magnetic force lines 301. It can be seen that the inclination is less than ± 3 degrees. 13 to 15, the intensity of the magnetic field formed in the vicinity of the processing surface of the wafer 1 is, for example, 50 to 100 [Oe]. Therefore, it can be seen that when the magnetic unit 100 of this embodiment is used, it is possible to form a uniform magnetic field that satisfies the magnetic field conditions necessary for forming the magnetic thin film.

For reference, the magnetic field formed in the vicinity of the processing surface of the wafer 1 when using the conventional magnetic unit 400 formed as a long magnet 401 will be described. FIG. 16 is a plan view showing a conventional magnetic part 400 and wafer 1 formed as a long magnet 401. FIG. 17 is an analysis example of the intensity distribution in the plane direction of the magnetic field formed in the vicinity of the processing surface of the wafer 1 by the conventional magnetic unit 400 formed as a long magnet. Note that the analysis models shown in FIGS. 16 and 17 are similarly analyzed in a half region of the actual machine for simplification. As shown in FIG. 17, when a conventional long magnet 401 is used as the magnetic part 400, it is dragged by the magnetic flux density around the magnetic poles at both ends of the magnet 401 (N pole, S pole), and the magnetic field lines 301 b at the outer edge of the wafer 1. Is formed obliquely with respect to the magnetic field lines 301b at the center of the wafer 1. For this reason, it can be seen that the magnetic field lines 301a at the center of the wafer 1 and the magnetic field lines 301b at the outer edge of the wafer 1 are not parallel to each other and are non-uniform magnetic fields.

(B) In order to change specifications or improve characteristics of the magnetoresistive element memory, the type of magnetic thin film to be formed may be changed from, for example, a CoFeB thin film to a PtFeP thin film. In such a case, it may be necessary to change the strength of the magnetic field formed in the vicinity of the processing surface of the wafer 1 depending on the type of magnetic thin film to be formed. In the present embodiment, the magnetic unit 100 is removed from the substrate support unit 50, and the magnetic field strength formed near the processing surface of the wafer 1 is changed by changing the magnetic strength and the number of small magnets 101 arranged in the magnet case 100a. It is possible to easily change the strength. Then, by adjusting the arrangement of the small magnets 101 and the spacers 102 disposed in the magnet case 100a, the magnetic field formed in the vicinity of the processing surface of the wafer 1 can be kept uniform. Thereby, the magnetic anisotropy of the magnetic thin film formed on the wafer 1 can be satisfactorily aligned, and the device performance of a magnetoresistive element memory using the magnetic thin film can be improved. In addition, by preparing the magnetic unit 100 in which the arrangement of the small magnets 101 and the spacers 102 is adjusted in advance according to the type of magnetic thin film to be formed, the magnetic unit 100 can be quickly replaced.

(C) According to the present embodiment, the force by which the particles 98 fly toward the processing surface of the wafer 1 (the force through which the particles 98 flow) is from the magnetic field in which the particles 98 are formed in the vicinity of the processing surface of the wafer 1. It is designed to be greater than the force it receives (Lorentz force). As a result, it is possible to prevent the particles 98 from being prevented from reaching the processing surface of the wafer 1 and to suppress the influence of the magnetic field on the film formation amount on the processing surface of the wafer 1.

(D) According to this embodiment, the small piece magnets 101 are formed in the same shape and the same size. Thereby, the manufacturing cost of the small piece magnet 101 can be reduced, and the manufacturing cost of a substrate processing apparatus can be suppressed.

(E) According to this embodiment, the magnetic yoke 3 to which the magnet case 100 a is attached is connected to the rotation mechanism 51. When the magnetic thin film is formed on the processing surface of the wafer 1, not only the wafer 1 is rotated but the magnetic unit 100 is rotated integrally with the wafer 1 by the rotation mechanism 51. That is, even when the wafer 1 is rotated to improve the in-plane film thickness uniformity of the magnetic thin film, the magnetic thin film is formed while maintaining the uniformity of the magnetic field in the vicinity of the processing surface of the wafer 1. Can be satisfactorily aligned. Note that it is difficult to change the magnetic field direction of each magnetic domain of the magnetic thin film after the magnetic particles 98 are adsorbed (deposited) on the processing surface of the wafer 1. According to the present embodiment, since the uniform magnetic field formed by the magnetic unit 100 can be applied to the particles 98 immediately before the particles 98 are deposited on the processing surface of the wafer 1, the magnetic film to be deposited is formed. It is possible to satisfactorily align the magnetic anisotropy of the thin film.

(F) According to the present embodiment, the substrate holding unit 4 that positions the wafer 1 in the circumferential direction is provided as a positioning mechanism. Thereby, the position of the wafer 1 placed on the substrate support unit 50 with respect to the magnetic unit 100, that is, the distance between the outer periphery of the wafer 1 and the magnetic unit 100 can be made constant. Therefore, a uniform magnetic field can be formed on the processing surface of the wafer 1 with good reproducibility, and the yield of substrate processing can be improved.

(G) According to the present embodiment, a plurality of small piece magnets 101 are arranged in a vacuum-sealable magnet case 100a. Thereby, the size of the magnetic part 100 (magnet case 100a) can be arbitrarily changed, and the magnetic part 100 (magnetic case 100a) can be made smaller than twice the diameter of the wafer 1. Therefore, the space for installing the magnetic unit 100 in the sputtering film forming chamber 42 can be reduced, and the substrate processing apparatus can be downsized.
Further, the vacuum replacement time of the sputtering film forming chamber 42 can be shortened, the processing time of the wafer 1 can be shortened, and the productivity of substrate processing can be improved.

(H) According to the present embodiment, the pair of magnetic units 100 are arranged to face each other so that the processing surface of the wafer 1 is sandwiched from the side. The magnetic units 100 are arranged in parallel to the tangent line of the wafer 1. The loading / unloading port 43 is provided between the pair of magnetic units 100. Thereby, the space for carrying in / out the wafer 1 can be always secured.

<Second Embodiment>
FIG. 19 is a plan view of the magnetic unit 100B and the wafer 1 according to the second embodiment of the present invention. FIG. 20 is a cross-sectional view of the magnetic unit 100B and the wafer 1 according to the second embodiment of the present invention.

  This embodiment is different from the first embodiment in that the magnetic body included in the magnetic unit 100B is not a permanent magnet but an electromagnet. That is, in this embodiment, as shown in FIGS. 19 and 20, the magnetic unit 100B is different from the first embodiment in that the magnet case 100a is provided with a plurality of small electromagnets 101B as a plurality of magnetic bodies. Different. The arrangement interval of the small electromagnets 101B sandwiching the center portion of the wafer 1 is set larger than the arrangement interval of the small electromagnets 101B sandwiching the outer edge portion of the wafer 1 as in the first embodiment. A power feeding unit 111 is connected to each of the plurality of small piece electromagnets 101B. The power feeding unit 111 and the small piece electromagnet 101B are connected via a coupling unit (not shown). The coupling portion is configured as a slip ring mechanism that electrically connects the rotating side and the fixed side with a metal brush or the like. Thereby, the rotation of the substrate support portion 50 is not hindered. The power feeding unit 111 is connected to the controller 240 (see FIG. 1). The controller 240 is configured as a power supply control unit that adjusts and controls the amount of power that the power supply unit 111 supplies to each of the plurality of small piece electromagnets 101B.

  Other configurations are the same as those in the first embodiment.

  According to the present embodiment, the magnetic body included in the magnetic unit 100B is configured by the small electromagnet 101B that is an electromagnet, not a permanent magnet. Therefore, the intensity of the magnetic field formed in the vicinity of the processing surface of the wafer 1 can be easily and arbitrarily changed by changing the amount of power supplied from the power supply unit 111 to the small electromagnet 101B. That is, even when the magnetic field strength is changed according to the type of magnetic thin film to be formed, the magnetic field strength can be easily and arbitrarily changed.

  Further, according to the present embodiment, similarly to the first embodiment, the arrangement interval of the small electromagnets 101B sandwiching the center portion of the wafer 1 is set larger than the arrangement interval of the small electromagnets 101B sandwiching the outer edge portion of the wafer 1. Has been. Thereby, a uniform magnetic field can be formed in the vicinity of the processing surface of the wafer 1 without individually adjusting the amount of power supplied to each small piece electromagnet 101B. That is, even if the amount of power supplied to each small piece electromagnet 101B is the same, a uniform magnetic field can be formed in the vicinity of the processing surface of the wafer 1.

  Moreover, according to this embodiment, as above-mentioned, it is not necessary to adjust separately the electric energy supplied to each small piece electromagnet 101B. That is, it is possible to simplify power supply control to the small piece electromagnet 101B. Therefore, the power feeding unit 111 and the magnetic unit 100B can be manufactured at low cost, and the manufacturing cost of the substrate processing apparatus can be suppressed.

  In the present embodiment, the amount of power supplied to each small piece electromagnet 101B is not limited to the same amount, and the amount of power supplied to each small piece electromagnet 101B may be individually adjusted. In such a case, the magnetic field formed near the processing surface of the wafer 1 can be made more uniform.

In this embodiment, the magnetic unit 100B is rotated integrally with the wafer 1 as the wafer 1 is rotated. That is, when the magnetic thin film is formed on the processing surface of the wafer 1, the magnetic unit 100 is rotated integrally with the wafer 1 by the rotation mechanism 51 instead of rotating only the wafer 1.
That is, even when the wafer 1 is rotated to improve the in-plane film thickness uniformity of the magnetic thin film, the magnetic thin film is formed while maintaining the uniformity of the magnetic field in the vicinity of the processing surface of the wafer 1. Can be satisfactorily aligned.

  On the other hand, a method in which the magnetic unit 100B is not rotated integrally with the wafer 1 is also conceivable. In this method, a plurality of electromagnets are arranged so as to surround the outer periphery of the wafer 1 in a circumferential shape. Then, power supply to each electromagnet is switched in accordance with the rotation of the wafer 1, and the processing surface of the wafer 1 and an external magnetic field formed in the vicinity of the processing surface of the wafer 1 are rotated in synchronization. However, in the case of such a method, complicated control for switching the power supply to each electromagnet in accordance with the rotation of the wafer 1 is required, which increases the manufacturing cost of the substrate processing apparatus. Further, since a plurality of electromagnets are arranged so as to surround the outer periphery of the wafer 1, the volume of the sputtering film forming chamber 42 is increased, the vacuum replacement time is increased, and the productivity of the substrate processing is deteriorated. On the other hand, in this embodiment, it is not necessary to perform complicated power supply control accompanying the rotation of the wafer 1, and the manufacturing cost of the substrate processing apparatus can be reduced. Moreover, since the magnetic part 100B (magnet case 100a) can be reduced in size, an increase in the volume of the sputtering film forming chamber 42 (processing chamber) can be prevented, the vacuum replacement time and the like can be shortened, and the substrate processing productivity can be improved. it can.

<Third Embodiment>
FIG. 21 is a plan view of the magnetic unit 100C and the wafer 1 according to the third embodiment of the present invention.

  This embodiment is different from the first embodiment in that the length of the nonmagnetic material included in the magnetic unit 100C is the same, and the size of the magnetic material is different. That is, in this embodiment, as shown in FIG. 21, the magnetic part 100C has the same size in the longitudinal direction of the spacer 102C as a non-magnetic material, and varies the size in the longitudinal direction of the small magnet 101C as a magnetic material. This is different from the first embodiment. Specifically, the spacers 102C are formed to have the same size in the longitudinal direction, and the size of the small magnets 101 that sandwich the central portion of the wafer 1 (the length of the small magnets 101 along the longitudinal direction of the magnetic part 100C) is the same. The size is set larger than the size of the outer edge of the wafer 1 (the length of the small magnet 101 along the longitudinal direction of the magnetic part 100C). In addition, the magnetic case 100 c is formed in the size of the diameter size of the wafer 1. That is, the small magnets 101C and the spacers 102C are arranged up to the position of the diameter size of the wafer 1.

  Other configurations are the same as those in the first embodiment.

  According to the present embodiment, the spacers 102 </ b> C are formed to have the same size in the longitudinal direction, and the longitudinal size of the small magnets 101 </ b> C that sandwich the center portion of the wafer 1 is the same as that of the small magnets 101 </ b> C that sandwich the outer edge portion of the wafer 1. It is set larger than the size in the longitudinal direction. As a result, the number of small magnets 101 </ b> C arranged per unit length sandwiching the center of the wafer 1 can be made smaller than the number of small magnets 101 </ b> C arranged per unit length sandwiching the outer edge of the wafer 1. In addition, the size of the magnetic case 100 c is formed to be approximately the same as the diameter size of the wafer 1. Accordingly, the magnetic unit 100C can be reduced in size, the size of the substrate processing apparatus can be reduced, the vacuum replacement time of the sputtering film forming chamber 42 (processing chamber) can be shortened, and the substrate processing productivity can be improved. Can do.

<Fourth Embodiment>
FIG. 22 is a plan view of the magnetic unit 100D and the wafer 1 according to the fourth embodiment of the present invention.

  In the present embodiment, the small magnets 101D are not arranged in a direction parallel to the tangent to the wafer 1, but are curved toward the outer edge of the wafer 1, that is, from the vicinity of the center of the wafer 1 to the wafer 1 The point which has arrange | positioned the small piece magnet 101D along outer periphery differs from 3rd Embodiment. That is, in the present embodiment, as shown in FIG. 22, the magnetic unit 100 </ b> D is arranged along the outer periphery of the wafer 1 from the vicinity of the center of the wafer 1 toward the outer edge side of the wafer 1 to dispose the small piece magnet 101 </ b> D. This is different from the third embodiment. Further, in the present embodiment, as in the third embodiment, the spacers 102D are formed to have the same size in the longitudinal direction, and the size in the longitudinal direction of the small magnet 101D that sandwiches the central portion of the wafer 1 is the same as that of the wafer 1. Is set to be larger than the size in the longitudinal direction of the small piece magnet 101D sandwiching the outer edge portion. Note that, similarly to the third embodiment, the size of the magnetic case 100 d is formed to be approximately the same as the diameter size of the wafer 1.

  The other configuration is the same as that of the third embodiment.

According to the present embodiment, the small magnet 101D is arranged so as to be curved from the vicinity of the center side of the wafer 1 toward the outer edge side of the wafer 1.
Thereby, since the small piece magnet 101D is positioned closer to the outer edge side of the wafer 1, the magnetic flux density of the magnetic field formed on the outer edge side of the wafer 1 can be increased. Therefore, the magnetic anisotropy of the magnetic thin film to be formed can be better aligned on the outer edge side of the wafer 1.

<Fifth Embodiment>
FIG. 23 is a partially enlarged view of a magnetic unit 100E according to the fifth embodiment of the present invention.

  In the present embodiment, the small magnet 101E is different from the first embodiment in that at least the shape in the wafer 1 side direction is formed at an acute angle. That is, in this embodiment, as shown in FIG. 23, the small magnet 101E is different from the first embodiment in that at least the shape in the wafer 1 side direction is formed at an acute angle.

  Other configurations are the same as those in the first embodiment.

  According to the present embodiment, the small piece magnet 101E is formed with an acute angle at least in the wafer 1 side direction. Thereby, the surface area of the surface of the small magnet 101E facing the wafer 1 can be increased, and the amount of magnetic field lines formed near the processing surface of the wafer 1 can be changed from the vicinity of the center of the wafer 1 to the outer edge of the wafer 1. Can be increased. Therefore, the strength of the magnetic field formed in the vicinity of the processing surface of the wafer 1 can be increased, and the magnetic anisotropy of the magnetic thin film to be formed can be made better.

<Other Embodiments of the Present Invention>
In the above-described embodiment, after performing the ion milling process, the process of forming the CoFeB thin film that is a magnetic thin film is performed, and then the process of forming the MgO thin film that is an insulating thin film is performed. Although implemented, the present invention is not limited to this. Of course, after the ion milling step, only the step of forming a CoFeB thin film, which is a magnetic thin film, is performed, and only one layer of the CoFeB thin film is formed. In addition, a step of forming a CoFeB thin film that is a magnetic thin film is performed, then a step of forming a MgO thin film that is an insulating thin film is performed, and then a step of forming a CoFeB thin film that is a magnetic thin film is further performed. It is also possible to apply layer deposition, and it is also possible to apply three or more layers by further layering.

  Further, the magnetic thin film to be formed is not limited to the CoFeB thin film but may be a magnetic thin film such as a PtFeP thin film. Furthermore, the present invention is not limited to a ternary magnetic thin film such as a CoFeB thin film or a PtFeP thin film, but can also be applied to a case where a quaternary or quinary magnetic thin film mixed with Cu, Ni, or the like is formed.

  In the above-described embodiment, the case where the first processing furnace 33 and the second processing furnace 34 are configured as a sputtering film forming apparatus has been described. However, the present invention is not limited to this, and a magnetic thin film is used. The present invention can be applied to all other substrate processing apparatuses for forming a film.

  In addition to the Si wafer substrate, the substrate on which the magnetic thin film is formed may be a quartz glass substrate, a crystallized glass substrate, an MgO substrate, or the like.

  Further, the present invention is not limited to a substrate processing apparatus that processes a wafer substrate such as a semiconductor manufacturing apparatus according to the present embodiment, but is also a substrate processing apparatus that processes a substrate such as a printed wiring board, a liquid crystal panel, a magnetic disk, or a compact disk. Can also be suitably applied.

  As mentioned above, although embodiment of this invention was described concretely, this invention is not limited to the above-mentioned embodiment, It can change variously in the range which does not deviate from the summary.

<Preferred embodiment of the present invention>
Hereinafter, preferred embodiments of the present invention will be additionally described.

According to one aspect of the invention,
A processing chamber for processing the substrate;
A substrate support for supporting the substrate in the processing chamber;
A film forming mechanism for forming a magnetic thin film on the processing surface of the substrate supported by the substrate support;
A pair of magnetic parts disposed opposite to each other so as to sandwich the processing surface from the side with respect to the processing surface of the substrate supported by the substrate support;
A gas exhaust part for exhausting a gas atmosphere in the processing chamber,
The magnetic part is formed by arranging a plurality of magnetic bodies,
There is provided a substrate processing apparatus in which an arrangement interval of the magnetic bodies sandwiching the central portion of the substrate is set larger than an arrangement interval of the magnetic bodies sandwiching an outer edge portion of the substrate.

  The film forming mechanism includes: a target holding unit that holds a target that irradiates particles on the processing surface of the substrate supported by the substrate supporting unit; and a sputtering that irradiates the target held by the target holding unit with ions. An ion supply unit.

  Preferably, the apparatus further includes a rotation mechanism that rotates the substrate support part and the magnetic part integrally.

  More preferably, it further includes a power supply unit that supplies power to each of the plurality of magnetic bodies, and a power supply control unit that adjusts and controls a power supply current supplied to each of the plurality of magnetic bodies by the power supply unit.

  More preferably, a non-magnetic body is provided between the adjacent magnetic bodies, the non-magnetic body and the magnetic body are alternately arranged, and the arrangement interval of the non-magnetic bodies sandwiching the central portion of the substrate is It is set to be larger than the arrangement interval of the non-magnetic bodies sandwiching the outer edge portion of the substrate.

More preferably, the said magnetic body is arrange | positioned so that the space | interval which adjoins from the center part side of the said board | substrate toward the outer edge part side of the said board | substrate may become small.

  More preferably, the magnetic bodies are formed in the same shape.

  More preferably, the magnetic part extends longer in the parallel direction than the diameter of the substrate, and the number of the magnetic bodies disposed in the extending portion per unit length is disposed within the diameter range of the substrate. The number of arrangements per unit length of the magnetic body is reduced.

  More preferably, the magnetic part extends longer in the direction parallel to the tangent of the substrate than the diameter of the substrate, and the number of arrangements per unit length of the magnetic body arranged in the extending portion is The number of the magnetic bodies arranged within the diameter range of the substrate is less than the number of arrangements per unit length.

  More preferably, the magnetic bodies are arranged so that the inclination angle of the magnetic field lines formed is within 3%.

  More preferably, the magnetic part extends longer in the direction parallel to the tangent of the substrate than the diameter of the substrate, and the magnetic flux density formed by the magnetic body disposed in the extending portion is It is comprised so that it may become less than the magnetic flux density which the said magnetic body arrange | positioned in the diameter range forms.

  More preferably, the substrate support portion further includes a positioning mechanism for positioning the substrate in the circumferential direction.

  More preferably, the magnetic part is formed to be curved from the vicinity of the center side of the substrate toward the outer edge of the substrate along the outer periphery of the substrate.

  More preferably, the magnetic body is formed with an acute angle at least in the substrate side direction.

  More preferably, the arrangement interval of the magnetic bodies arranged at a position near the outer edge portion of the substrate is set larger than the arrangement interval of the magnetic bodies arranged at a position far from the outer edge portion of the substrate.

  More preferably, a non-magnetic body is provided between the adjacent magnetic bodies, and the non-magnetic body and the magnetic body are alternately arranged, and the longitudinal direction of the non-magnetic body sandwiching the center portion of the substrate The size is set larger than the size in the longitudinal direction of the non-magnetic material sandwiching the outer edge portion of the substrate.

  More preferably, the longitudinal size of the magnetic body sandwiching the center portion of the substrate is set larger than the longitudinal size of the magnetic body sandwiching the outer edge portion of the substrate.

According to another aspect of the invention,
A step of supporting the substrate carried into the processing chamber by the substrate support portion;
A pair of magnetic units disposed opposite to each other so as to sandwich the processing surface from the side with respect to the processing surface of the substrate supported by the substrate support unit, wherein the magnetic unit includes a plurality of magnetic bodies; A plurality of the magnetic bodies are arranged such that the arrangement intervals of the magnetic bodies sandwiching the center portion of the substrate are set larger than the arrangement intervals of the magnetic bodies sandwiching the outer edge portion of the substrate. In a state where a magnetic field is formed between the magnetic bodies and at least in the vicinity of the processing surface of the substrate, a gas atmosphere in the processing chamber is exhausted from a gas exhaust unit to the processing surface of the substrate by a film forming mechanism. Forming a magnetic thin film;
A method of manufacturing a semiconductor device having the above is provided.

  Preferably, the substrate processing step processes the substrate while integrally rotating the substrate support portion and the magnetic portion by a rotation mechanism.

  More preferably, in the substrate processing step, the substrate is processed in a state where an inclination angle of each magnetic field line is within 3% with respect to the magnetic field formed at least in the vicinity of the processing surface of the substrate.

According to yet another aspect of the invention,
A processing chamber for processing the substrate;
A substrate support for supporting the substrate in the processing chamber;
A film forming mechanism for forming a magnetic thin film on the processing surface of the substrate supported by the substrate support;
A pair of magnetic parts disposed opposite to each other so as to sandwich the processing surface from the side with respect to the processing surface of the substrate supported by the substrate support;
A gas exhaust part for exhausting a gas atmosphere in the processing chamber,
In the magnetic part, a plurality of magnetic bodies and a plurality of non-magnetic bodies are alternately arranged in a direction parallel to the tangent line of the substrate, and the arrangement interval of the non-magnetic bodies sandwiching the central portion of the substrate is There is provided a substrate processing apparatus which is set to be larger than an arrangement interval of non-magnetic materials.

According to yet another aspect of the invention,
A step of supporting the substrate carried into the processing chamber by the substrate support portion;
A pair of magnetic units disposed opposite to each other so as to sandwich the processing surface from the side with respect to the processing surface of the substrate supported by the substrate support unit, wherein the magnetic unit includes a plurality of magnetic bodies; The parallel arrangement of the magnetic bodies sandwiching the outer edge of the substrate is arranged in parallel to the tangent line of the substrate, and the parallel spacing of the magnetic bodies sandwiching the central portion of the substrate The gap between the magnetic bodies and at least in the vicinity of the processing surface of the substrate in a state where a magnetic field is formed, the gas atmosphere in the processing chamber is exhausted from a gas exhaust unit by the film forming mechanism. Forming a magnetic thin film on the treated surface of the substrate;
A method of manufacturing a semiconductor device having the above is provided.

1 Wafer (substrate)
3 Magnetic yoke 4 Substrate holder (positioning mechanism)
42 Sputtering deposition chamber (processing chamber)
46 Target holding mechanism (deposition mechanism)
50 Substrate support
51 Rotating mechanism 53 Exhaust port (gas exhaust part)
54 Piping (gas exhaust part)
55 Exhaust pump (gas exhaust part)
80 Sputtering ion supply unit (deposition mechanism)
DESCRIPTION OF SYMBOLS 100 Magnetic part 100a Magnet case 101 Small piece permanent magnet (magnetic body)
102 Spacer (Non-magnetic material)

Claims (5)

A processing chamber for processing the substrate;
A substrate support for supporting the substrate in the processing chamber;
A film forming mechanism for forming a magnetic thin film on the processing surface of the substrate supported by the substrate support;
A pair of magnetic parts disposed opposite to each other so as to sandwich the processing surface from the side with respect to the processing surface of the substrate supported by the substrate support;
A gas exhaust part for exhausting a gas atmosphere in the processing chamber,
The magnetic part is formed by arranging a plurality of magnetic bodies,
The substrate processing apparatus, wherein an arrangement interval of the magnetic bodies sandwiching the central portion of the substrate is set larger than an arrangement interval of the magnetic bodies sandwiching an outer edge portion of the substrate.   The substrate processing apparatus according to claim 1, further comprising a rotation mechanism that integrally rotates the substrate support unit and the magnetic unit.   The power supply unit that supplies power to each of the plurality of magnetic bodies, and a power supply amount adjustment unit that adjusts a power supply current that the power supply unit supplies to each of the plurality of magnetic bodies. The substrate processing apparatus as described. A step of supporting the substrate carried into the processing chamber by the substrate support portion;
A pair of magnetic units disposed opposite to each other so as to sandwich the processing surface from the side with respect to the processing surface of the substrate supported by the substrate support unit, wherein the magnetic unit includes a plurality of magnetic bodies; A plurality of the magnetic bodies are arranged such that the arrangement intervals of the magnetic bodies sandwiching the center portion of the substrate are set larger than the arrangement intervals of the magnetic bodies sandwiching the outer edge portion of the substrate. In a state where a magnetic field is formed between the magnetic bodies and at least in the vicinity of the processing surface of the substrate, a gas atmosphere in the processing chamber is exhausted from a gas exhaust unit to the processing surface of the substrate by a film forming mechanism. Forming a magnetic thin film;
A method for manufacturing a semiconductor device, comprising:   5. The method of manufacturing a semiconductor device according to claim 4, wherein in the substrate processing step, the substrate is processed while rotating the substrate support part and the magnetic part by a rotation mechanism.