JP2010524830A - メタライズされた表面を備えるセラミックボディを有するコンポーネント - Google Patents
メタライズされた表面を備えるセラミックボディを有するコンポーネント Download PDFInfo
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Abstract
Description
Claims (17)
- 少なくとも1つの領域中でその表面(3,4)がメタライズ部(5,6)により覆われているセラミックボディ(2)を有するコンポーネント(1)であって、前記セラミックボディ(2)が立体的に構造化されている(7)ことを特徴とする、セラミックボディ(2)を有するコンポーネント(1)。
- セラミック材料が、主成分としてZrO2/HfO250.1質量%〜100質量%またはAl2O350.1質量%〜100質量%またはAlN50.1質量%〜100質量%またはSi3N450.1質量%〜100質量%またはBeO50.1質量%〜100質量%、SiC50.1質量%〜100質量%または前記主成分の少なくとも2つの組み合わせ物を任意の組み合わせにおいて上記の成分範囲内で含有し、ならびに副成分として少なくとも1つの酸化状態における元素のCa、Sr、Si、Mg、B、Y、Sc、Ce、Cu、Zn、Pbおよび/または化合物を≦49.9質量%の割合で単独または任意の組み合わせにおいて上記の成分範囲内で含有することを、および前記主成分および前記副成分が、≦3質量%の割合の不純物を差し引いて、任意の組み合わせにおいて100質量%の全組成物になるように互いに組み合わせ可能であることを特徴とする、請求項1記載のコンポーネント。
- セラミック体(2)の曲げ破断強度が100MPaより大きく、かつ材料の熱伝導率が1W/mKより大きいことを特徴とする、請求項1または2記載のコンポーネント。
- メタライズ部を有さない前記セラミックボディ(2)のセラミック材料の熱膨張係数が12×10-6/Kより小さいことを特徴とする、請求項1から3までのいずれか1項記載のコンポーネント。
- メタライズ部(5,6)として、セラミックボディ(2)と、有利には担体ボディと同じまたは異なる熱伝導率を有する金属または金属層が、密接にまたは機械的な形状結合によって面全体または面の一部分で接合されていることを特徴とする、請求項1から4までのいずれか1項記載のコンポーネント。
- メタライズ部(5,6)が、純粋な品質または工業的な品質のタングステン、銀、金、銅、白金、パラジウム、ニッケル、アルミニウムまたは鋼または少なくとも2つの異なる金属の混合物および/または、付加的にまたはそれ単独で、反応はんだ、軟質はんだまたは硬質はんだ(9)から成ることを特徴とする、請求項1から5までのいずれか1項記載のコンポーネント。
- メタライズ部(5,6)の金属または金属層が、接着を促進する添加材またはその他の添加材、例えばガラスまたはポリマー材料と混合されていることを特徴とする、請求項1から6までのいずれか1項記載のコンポーネント。
- セラミックボディ(2)上のメタライズ部(5,6)が少なくとも1つの層から成ること、および前記層がDCB法(Direct Copper Bonding)またはAMB法(Active Metal Brazing)またはスクリーン印刷法または電着法または化学堆積法または蒸着法の使用下で、あるいは付着または接着またはこれらの方法の組み合わせによってボディの表面上に、向かい合う面および/または隣接する面に施与されていることを特徴とする、請求項1から7までのいずれか1項記載のコンポーネント。
- メタライズ部(5,6)が、セラミックボディ(2)の表面(3,4)を金属ボディとして面の一部分または面全体でまたは部分的または完全に、平行平面形またはほぼ平行平面形でまたは任意に幾何学的な形状で、またはこれらの形状を組み合わせた形で覆うことを特徴とする、請求項1から8までのいずれか1項記載のコンポーネント。
- メタライズ部(5,6)が20N/cmより大きい接着強度を有することを特徴とする、請求項1から9までのいずれか1項記載のコンポーネント。
- メタライズ部(5,6)の少なくとも1つの層の厚さが≦2mmであることを特徴とする、請求項1から10までのいずれか1項記載のコンポーネント。
- 少なくとも1つの表面(3,4)に少なくとも1つのメタライズ部(5,6)を有するコンポーネント(1)の曲げ破断強度が550MPaより大きいことを特徴とする、請求項1から11までのいずれか1項記載のコンポーネント。
- セラミックボディ(2)上の少なくとも1つのメタライズ部(5)上に、その表面の面の一部分または面全体をマスクする少なくとも1つのさらに別のメタライズ部(6)が適用されていることを特徴とする、請求項1から12までのいずれか1項記載のコンポーネント。
- 少なくとも1つのメタライズ部(5,6)が100W/mKの最小導電率を有することを特徴とする、請求項1から13までのいずれか1項記載のコンポーネント。
- セラミックボディ(2)上の少なくとも1つのメタライズ部(5)上に、能動電子部品または受動電子部品(8)が取り付けられていることを特徴とする、請求項1から14までのいずれか1項記載のコンポーネント。
- セラミックボディ(2)上の少なくとも1つのメタライズ部(5,6)上に、能動電子部品または受動電子部品(8)が取り付けられており、該電子部品(8)は、はんだ付け接合部および/またはボンディング接合部(9)を介して少なくとも1つの箇所で、セラミックボディ(2)上に取り付けられたメタライズ部(5)と電気的または/および熱的に接合されていることを特徴とする、請求項1から15までのいずれか1項記載のコンポーネント。
- セラミックボディ(2)が、冷却リブ(7)を備え付けて、ヒートシンクとして形成されていることを特徴とする、請求項1から16のいずれか1項記載のコンポーネント。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007019633 | 2007-04-24 | ||
| DE102007019633.6 | 2007-04-24 | ||
| PCT/EP2008/054626 WO2008128945A1 (de) | 2007-04-24 | 2008-04-17 | Bauteil mit einem keramischen körper mit metallisierter oberfläche |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010524830A true JP2010524830A (ja) | 2010-07-22 |
| JP2010524830A5 JP2010524830A5 (ja) | 2013-01-31 |
| JP5649958B2 JP5649958B2 (ja) | 2015-01-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010504631A Expired - Fee Related JP5649958B2 (ja) | 2007-04-24 | 2008-04-17 | メタライズされた表面を備えるセラミックボディを有するコンポーネント |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8980398B2 (ja) |
| EP (1) | EP2142489A1 (ja) |
| JP (1) | JP5649958B2 (ja) |
| KR (1) | KR101519925B1 (ja) |
| CN (1) | CN101687718A (ja) |
| DE (1) | DE102008001221A1 (ja) |
| WO (1) | WO2008128945A1 (ja) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1197911C (zh) | 2000-05-09 | 2005-04-20 | 旭化成株式会社 | 嵌段共聚物及含有该共聚物的组合物 |
| DE102008063325A1 (de) * | 2008-12-30 | 2010-07-01 | Osram Opto Semiconductors Gmbh | Verfahren zur Fertigung von Leuchtmitteln |
| DE102009025033A1 (de) | 2009-06-10 | 2010-12-16 | Behr Gmbh & Co. Kg | Thermoelektrische Vorrichtung und Verfahren zum Herstellen einer thermoelektrischen Vorrichtung |
| TWI525287B (zh) | 2009-10-27 | 2016-03-11 | 製陶技術股份有限公司 | 由具有led的可變規模的陶瓷二極體載體構成的陣列 |
| CN103547850A (zh) * | 2011-03-29 | 2014-01-29 | 陶瓷技术有限责任公司 | 具有陶瓷冷却器和led的浇注灯体 |
| DE102018221160A1 (de) * | 2018-12-06 | 2020-06-10 | Siemens Aktiengesellschaft | Isolierkeramik für elektrische Schaltungen und zugehörige Anwendungen |
| SE543338C2 (en) * | 2019-04-04 | 2020-12-08 | Swep Int Ab | Stencil device and method for stencil printing of brazing material onto a heat exchanger plate and use thereof |
| CN110563484A (zh) * | 2019-08-26 | 2019-12-13 | 泰州市光明电子材料有限公司 | 一种陶瓷表面金属化工艺 |
| DE102019124593A1 (de) * | 2019-09-12 | 2021-03-18 | Tdk Electronics Ag | Kühlsystem |
| TWI760242B (zh) * | 2021-05-31 | 2022-04-01 | 微智冷科技股份有限公司 | 複合結構與封裝架構 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62113783A (ja) * | 1985-11-13 | 1987-05-25 | 日本セメント株式会社 | 窒化けい素焼結体のメタライズ方法 |
| JPS63131194U (ja) * | 1987-02-19 | 1988-08-26 | ||
| JPH10284808A (ja) * | 1997-04-08 | 1998-10-23 | Denki Kagaku Kogyo Kk | 回路基板 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2326534A (en) * | 1940-12-28 | 1943-08-10 | Murray Corp | Bath tub |
| JPS61248302A (ja) * | 1985-04-25 | 1986-11-05 | 株式会社日立製作所 | 炭化ケイ素焼結体用メタライズペ−スト |
| JPS6370545A (ja) * | 1986-09-12 | 1988-03-30 | Hitachi Ltd | 半導体パツケ−ジ |
| DE3777522D1 (de) * | 1986-10-17 | 1992-04-23 | Hitachi Ltd | Verfahren zum herstellen einer gemischten struktur fuer halbleiteranordnung. |
| DE3709200A1 (de) * | 1987-03-20 | 1988-09-29 | Heraeus Gmbh W C | Elektronisches bauteil |
| JPH01111360A (ja) * | 1987-10-26 | 1989-04-28 | Fujitsu Ltd | 半導体装置 |
| JP2662738B2 (ja) * | 1988-11-11 | 1997-10-15 | 株式会社トーキン | セラミックス放熱フィン付半導体装置 |
| JPH0336754A (ja) * | 1989-07-03 | 1991-02-18 | Mitsubishi Electric Corp | Icパツケージ及びその製造方法 |
| JPH0382060A (ja) * | 1989-08-24 | 1991-04-08 | Nec Corp | 半導体装置 |
| JPH0437662A (ja) * | 1990-06-01 | 1992-02-07 | Murata Mfg Co Ltd | セラミック基板と金属板の接合構造 |
| DE69232912T2 (de) | 1991-11-28 | 2003-12-24 | Kabushiki Kaisha Toshiba, Kawasaki | Halbleitergehäuse |
| JP3208438B2 (ja) * | 1992-01-16 | 2001-09-10 | イビデン株式会社 | 金属層を備えたセラミックス基板とその製造方法 |
| JP3339572B2 (ja) * | 1999-10-04 | 2002-10-28 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| DE102004012231B4 (de) | 2004-03-09 | 2006-03-23 | Curamik Electronics Gmbh | Metall-Keramik-Substrat |
| CN1707886A (zh) * | 2004-06-11 | 2005-12-14 | 中国科学院半导体研究所 | 一种氮化铝交叠式单片集成微通道热沉 |
| DE102004033227A1 (de) | 2004-07-08 | 2006-01-26 | Curamik Electronics Gmbh | Metall-Keramik-Substrat |
| TWI449137B (zh) * | 2006-03-23 | 2014-08-11 | 製陶技術創新製陶工程股份公司 | 構件或電路用的攜帶體 |
| US20070236883A1 (en) * | 2006-04-05 | 2007-10-11 | Javier Ruiz | Electronics assembly having heat sink substrate disposed in cooling vessel |
-
2008
- 2008-04-17 US US12/596,864 patent/US8980398B2/en not_active Expired - Fee Related
- 2008-04-17 KR KR1020097024487A patent/KR101519925B1/ko not_active Expired - Fee Related
- 2008-04-17 WO PCT/EP2008/054626 patent/WO2008128945A1/de not_active Ceased
- 2008-04-17 DE DE102008001221A patent/DE102008001221A1/de not_active Withdrawn
- 2008-04-17 JP JP2010504631A patent/JP5649958B2/ja not_active Expired - Fee Related
- 2008-04-17 CN CN200880021678A patent/CN101687718A/zh active Pending
- 2008-04-17 EP EP08736299A patent/EP2142489A1/de not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62113783A (ja) * | 1985-11-13 | 1987-05-25 | 日本セメント株式会社 | 窒化けい素焼結体のメタライズ方法 |
| JPS63131194U (ja) * | 1987-02-19 | 1988-08-26 | ||
| JPH10284808A (ja) * | 1997-04-08 | 1998-10-23 | Denki Kagaku Kogyo Kk | 回路基板 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101687718A (zh) | 2010-03-31 |
| KR20100017331A (ko) | 2010-02-16 |
| DE102008001221A1 (de) | 2008-10-30 |
| US8980398B2 (en) | 2015-03-17 |
| KR101519925B1 (ko) | 2015-05-14 |
| EP2142489A1 (de) | 2010-01-13 |
| WO2008128945A1 (de) | 2008-10-30 |
| US20100089625A1 (en) | 2010-04-15 |
| JP5649958B2 (ja) | 2015-01-07 |
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