JP2010229210A - Resin composition - Google Patents
Resin composition Download PDFInfo
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- JP2010229210A JP2010229210A JP2009075881A JP2009075881A JP2010229210A JP 2010229210 A JP2010229210 A JP 2010229210A JP 2009075881 A JP2009075881 A JP 2009075881A JP 2009075881 A JP2009075881 A JP 2009075881A JP 2010229210 A JP2010229210 A JP 2010229210A
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- Prior art keywords
- acid
- resin composition
- group
- resin
- mol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000011342 resin composition Substances 0.000 title claims abstract description 67
- -1 methylol group Chemical group 0.000 claims abstract description 52
- 150000001875 compounds Chemical class 0.000 claims abstract description 31
- 239000002253 acid Substances 0.000 claims abstract description 28
- 229920001721 polyimide Polymers 0.000 claims abstract description 22
- 239000002243 precursor Substances 0.000 claims abstract description 19
- 239000004642 Polyimide Substances 0.000 claims abstract description 15
- 125000004849 alkoxymethyl group Chemical group 0.000 claims abstract description 15
- 229920002577 polybenzoxazole Polymers 0.000 claims abstract description 15
- 239000004962 Polyamide-imide Substances 0.000 claims abstract description 13
- 229920002312 polyamide-imide Polymers 0.000 claims abstract description 13
- 229920001577 copolymer Polymers 0.000 claims abstract description 8
- 239000011347 resin Substances 0.000 claims description 71
- 229920005989 resin Polymers 0.000 claims description 71
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 33
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 33
- 239000003999 initiator Substances 0.000 claims description 7
- 238000010304 firing Methods 0.000 abstract description 10
- 230000015572 biosynthetic process Effects 0.000 abstract description 8
- 238000010348 incorporation Methods 0.000 abstract 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 55
- 239000010408 film Substances 0.000 description 53
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 42
- 238000000034 method Methods 0.000 description 36
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 19
- 239000002904 solvent Substances 0.000 description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 19
- 238000000576 coating method Methods 0.000 description 18
- 239000000203 mixture Substances 0.000 description 17
- 150000004985 diamines Chemical class 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 15
- 238000011161 development Methods 0.000 description 15
- 230000018109 developmental process Effects 0.000 description 15
- 239000002966 varnish Substances 0.000 description 15
- 239000011248 coating agent Substances 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 14
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 13
- 238000004132 cross linking Methods 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000003795 chemical substances by application Substances 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- 239000002244 precipitate Substances 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 9
- 150000002148 esters Chemical class 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 239000008096 xylene Substances 0.000 description 9
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 8
- 238000006116 polymerization reaction Methods 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- MSTZGVRUOMBULC-UHFFFAOYSA-N 2-amino-4-[2-(3-amino-4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phenol Chemical compound C1=C(O)C(N)=CC(C(C=2C=C(N)C(O)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 MSTZGVRUOMBULC-UHFFFAOYSA-N 0.000 description 7
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 7
- 150000008065 acid anhydrides Chemical class 0.000 description 7
- 238000001035 drying Methods 0.000 description 7
- 239000009719 polyimide resin Substances 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- GPXCORHXFPYJEH-UHFFFAOYSA-N 3-[[3-aminopropyl(dimethyl)silyl]oxy-dimethylsilyl]propan-1-amine Chemical compound NCCC[Si](C)(C)O[Si](C)(C)CCCN GPXCORHXFPYJEH-UHFFFAOYSA-N 0.000 description 6
- PLIKAWJENQZMHA-UHFFFAOYSA-N 4-aminophenol Chemical compound NC1=CC=C(O)C=C1 PLIKAWJENQZMHA-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 239000003513 alkali Substances 0.000 description 6
- 125000000217 alkyl group Chemical group 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 239000002981 blocking agent Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 6
- 230000015654 memory Effects 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- 125000003396 thiol group Chemical group [H]S* 0.000 description 6
- 150000003628 tricarboxylic acids Chemical class 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 150000001805 chlorine compounds Chemical class 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- 125000000524 functional group Chemical group 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 125000000962 organic group Chemical group 0.000 description 5
- 150000002923 oximes Chemical class 0.000 description 5
- 229920005575 poly(amic acid) Polymers 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 5
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 4
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical class [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 4
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 4
- 0 C*N(C(*1(C(N2C)=O)C2=O)=O)C1=O Chemical compound C*N(C(*1(C(N2C)=O)C2=O)=O)C1=O 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 150000001298 alcohols Chemical class 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- 229940116333 ethyl lactate Drugs 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 4
- 125000000542 sulfonic acid group Chemical group 0.000 description 4
- AXKGIPZJYUNAIW-UHFFFAOYSA-N (4-aminophenyl)methanol Chemical compound NC1=CC=C(CO)C=C1 AXKGIPZJYUNAIW-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 3
- OGRAOKJKVGDSFR-UHFFFAOYSA-N 6-Oxy-pseudocumol Natural products CC1=CC(C)=C(C)C(O)=C1 OGRAOKJKVGDSFR-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 150000001408 amides Chemical class 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- 239000010954 inorganic particle Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 230000036211 photosensitivity Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 150000003457 sulfones Chemical class 0.000 description 3
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 3
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 description 2
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- QWBBPBRQALCEIZ-UHFFFAOYSA-N 2,3-dimethylphenol Chemical compound CC1=CC=CC(O)=C1C QWBBPBRQALCEIZ-UHFFFAOYSA-N 0.000 description 2
- VXSCPERJHPWROZ-UHFFFAOYSA-N 2,4,5-trimethylphenol Chemical compound CC1=CC(C)=C(O)C=C1C VXSCPERJHPWROZ-UHFFFAOYSA-N 0.000 description 2
- NKTOLZVEWDHZMU-UHFFFAOYSA-N 2,5-xylenol Chemical compound CC1=CC=C(C)C(O)=C1 NKTOLZVEWDHZMU-UHFFFAOYSA-N 0.000 description 2
- NXXYKOUNUYWIHA-UHFFFAOYSA-N 2,6-Dimethylphenol Chemical compound CC1=CC=CC(C)=C1O NXXYKOUNUYWIHA-UHFFFAOYSA-N 0.000 description 2
- LEJBBGNFPAFPKQ-UHFFFAOYSA-N 2-(2-prop-2-enoyloxyethoxy)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOC(=O)C=C LEJBBGNFPAFPKQ-UHFFFAOYSA-N 0.000 description 2
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 2
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 2
- XFCMNSHQOZQILR-UHFFFAOYSA-N 2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOC(=O)C(C)=C XFCMNSHQOZQILR-UHFFFAOYSA-N 0.000 description 2
- INQDDHNZXOAFFD-UHFFFAOYSA-N 2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOC(=O)C=C INQDDHNZXOAFFD-UHFFFAOYSA-N 0.000 description 2
- HCLJOFJIQIJXHS-UHFFFAOYSA-N 2-[2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOCCOC(=O)C=C HCLJOFJIQIJXHS-UHFFFAOYSA-N 0.000 description 2
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 2
- JESXATFQYMPTNL-UHFFFAOYSA-N 2-ethenylphenol Chemical compound OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- FDQQNNZKEJIHMS-UHFFFAOYSA-N 3,4,5-trimethylphenol Chemical compound CC1=CC(O)=CC(C)=C1C FDQQNNZKEJIHMS-UHFFFAOYSA-N 0.000 description 2
- YCOXTKKNXUZSKD-UHFFFAOYSA-N 3,4-xylenol Chemical compound CC1=CC=C(O)C=C1C YCOXTKKNXUZSKD-UHFFFAOYSA-N 0.000 description 2
- TUAMRELNJMMDMT-UHFFFAOYSA-N 3,5-xylenol Chemical compound CC1=CC(C)=CC(O)=C1 TUAMRELNJMMDMT-UHFFFAOYSA-N 0.000 description 2
- HMNKTRSOROOSPP-UHFFFAOYSA-N 3-Ethylphenol Chemical compound CCC1=CC=CC(O)=C1 HMNKTRSOROOSPP-UHFFFAOYSA-N 0.000 description 2
- IJFXRHURBJZNAO-UHFFFAOYSA-N 3-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=CC(O)=C1 IJFXRHURBJZNAO-UHFFFAOYSA-N 0.000 description 2
- ASHGTJPOSUFTGB-UHFFFAOYSA-N 3-methoxyphenol Chemical compound COC1=CC=CC(O)=C1 ASHGTJPOSUFTGB-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 2
- HXDOZKJGKXYMEW-UHFFFAOYSA-N 4-ethylphenol Chemical compound CCC1=CC=C(O)C=C1 HXDOZKJGKXYMEW-UHFFFAOYSA-N 0.000 description 2
- JXYITCJMBRETQX-UHFFFAOYSA-N 4-ethynylaniline Chemical compound NC1=CC=C(C#C)C=C1 JXYITCJMBRETQX-UHFFFAOYSA-N 0.000 description 2
- YQUQWHNMBPIWGK-UHFFFAOYSA-N 4-isopropylphenol Chemical compound CC(C)C1=CC=C(O)C=C1 YQUQWHNMBPIWGK-UHFFFAOYSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-WFGJKAKNSA-N Dimethyl sulfoxide Chemical compound [2H]C([2H])([2H])S(=O)C([2H])([2H])[2H] IAZDPXIOMUYVGZ-WFGJKAKNSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000004471 Glycine Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 2
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 150000001299 aldehydes Chemical class 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- RWZYAGGXGHYGMB-UHFFFAOYSA-N anthranilic acid Chemical compound NC1=CC=CC=C1C(O)=O RWZYAGGXGHYGMB-UHFFFAOYSA-N 0.000 description 2
- 150000004984 aromatic diamines Chemical class 0.000 description 2
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 2
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 2
- QMKYBPDZANOJGF-UHFFFAOYSA-N benzene-1,3,5-tricarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=CC(C(O)=O)=C1 QMKYBPDZANOJGF-UHFFFAOYSA-N 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- 125000002837 carbocyclic group Chemical group 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical group 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 239000003431 cross linking reagent Substances 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 125000005442 diisocyanate group Chemical group 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
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Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
本発明は樹脂組成物に関する。より詳しくは、半導体素子の表面保護膜、層間絶縁膜、有機電界発光素子の絶縁層などに好適に用いられる樹脂組成物に関する。 The present invention relates to a resin composition. More specifically, the present invention relates to a resin composition suitably used for a surface protective film of a semiconductor element, an interlayer insulating film, an insulating layer of an organic electroluminescent element, and the like.
従来、電子機器の半導体素子の表面保護膜や層間絶縁膜などには、耐熱性や機械特性などに優れたポリイミド系樹脂、ポリベンゾオキサゾール系樹脂、ポリアミドイミド系樹脂が広く使用されている。ポリイミド前駆体、ポリベンゾオキサゾール前駆体、ポリアミドイミド前駆体の塗膜を熱的に脱水閉環させて耐熱性、機械特性に優れた薄膜を得る場合、通常350℃前後の高温焼成を必要とする。ところが、例えば、次世代メモリとして有望なMRAM(Magnetoresistive Random Access Memory;磁気抵抗メモリ)などは高温プロセスに弱いため、表面保護膜においても、約250℃以下、さらに望ましくは200℃以下の低温での焼成で硬化可能であり、従来の350℃前後の高温で焼成したものと遜色ない性能が得られるポリイミド系樹脂、ポリベンゾオキサゾール系樹脂、ポリアミドイミド系樹脂が求められている。 Conventionally, polyimide-based resins, polybenzoxazole-based resins, and polyamide-imide-based resins that are excellent in heat resistance, mechanical properties, and the like have been widely used for surface protective films and interlayer insulating films of semiconductor elements of electronic devices. When a thin film excellent in heat resistance and mechanical properties is obtained by thermally dehydrating and closing a coating film of a polyimide precursor, a polybenzoxazole precursor, and a polyamideimide precursor, high-temperature baking at around 350 ° C. is usually required. However, for example, MRAM (Magnetic Resistive Random Access Memory), which is promising as a next generation memory, is vulnerable to high-temperature processes. Therefore, even in the surface protective film, it is about 250 ° C. or less, more preferably 200 ° C. or less. There is a need for polyimide resins, polybenzoxazole resins, and polyamideimide resins that can be cured by firing and can provide performances comparable to those fired at a high temperature of around 350 ° C.
低温硬化可能な樹脂組成物としては、ポリイミド、ポリベンゾオキサゾール、ポリベンゾイミダゾール、ポリベンゾチアゾールなどの樹脂100重量部および熱架橋剤10〜100重量部を含有する樹脂組成物(例えば、特許文献1参照)、アルカリ可溶性ポリアミドイミド、光酸発生剤、溶剤および架橋剤を含有するポジ型感光性ポリアミドイミド樹脂組成物(例えば、特許文献2参照)などが知られている。これらの樹脂組成物は前駆体ではなく既閉環型の樹脂を用いることで、低温焼成においても耐薬品性に優れ、硬化時の熱収縮を抑えることが可能であった。ところが、これらの樹脂組成物は既閉環型の樹脂に限定されるため、樹脂設計の自由度の高い組成物が求められていた。 As a low-temperature curable resin composition, a resin composition containing 100 parts by weight of a resin such as polyimide, polybenzoxazole, polybenzimidazole, or polybenzothiazole and 10 to 100 parts by weight of a thermal crosslinking agent (for example, Patent Document 1) And a positive photosensitive polyamideimide resin composition containing an alkali-soluble polyamideimide, a photoacid generator, a solvent and a crosslinking agent (see, for example, Patent Document 2). By using a closed ring type resin instead of a precursor for these resin compositions, it was excellent in chemical resistance even at low temperature firing, and it was possible to suppress thermal shrinkage during curing. However, since these resin compositions are limited to closed ring type resins, compositions having a high degree of freedom in resin design have been demanded.
一方、低温焼成時においても機械特性の優れた薄膜が得られる樹脂組成物として、アルカリ可溶性樹脂、光酸発生剤および酸の作用によりアルカリ可溶性樹脂の末端基と架橋し得る化合物を含有する感光性樹脂組成物(例えば、特許文献3〜4参照)が提案されている。しかし、この方法では特に200℃以下の低温で焼成した場合、膜の硬化が不充分なため機械特性が著しく低下する課題があった。 On the other hand, as a resin composition from which a thin film having excellent mechanical properties can be obtained even at low-temperature firing, a photosensitive composition containing an alkali-soluble resin, a photoacid generator, and a compound capable of crosslinking with an end group of the alkali-soluble resin by the action of an acid Resin compositions (for example, see Patent Documents 3 to 4) have been proposed. However, this method has a problem that the mechanical properties are remarkably lowered due to insufficient curing of the film, particularly when firing at a low temperature of 200 ° C. or lower.
本発明は、200℃以下の低温焼成時においても機械特性に優れた硬化膜を得ることのできる樹脂組成物を提供することを目的とする。 An object of this invention is to provide the resin composition which can obtain the cured film excellent in the mechanical characteristic also at the time of low temperature baking of 200 degrees C or less.
上記課題を解決するため、本発明の樹脂組成物は下記の構成からなる。すなわち、(a)アルコキシメチル基またはメチロール基を有するポリイミド、ポリベンゾオキサゾール、ポリアミドイミド、それらいずれかの前駆体またはそれらの共重合体、および(b)アルコキシメチル基またはメチロール基を少なくとも2つ有する化合物を含有する樹脂組成物である。 In order to solve the above problems, the resin composition of the present invention has the following constitution. That is, (a) polyimide having an alkoxymethyl group or methylol group, polybenzoxazole, polyamideimide, a precursor or copolymer thereof, and (b) having at least two alkoxymethyl groups or methylol groups It is a resin composition containing a compound.
本発明の樹脂組成物によって、200℃以下の低温焼成によって機械強度に優れた硬化膜を得ることができる。 With the resin composition of the present invention, a cured film having excellent mechanical strength can be obtained by low-temperature baking at 200 ° C. or lower.
本発明の樹脂組成物は、(a)アルコキシメチル基またはメチロール基を有するポリイミド、ポリベンゾオキサゾール、ポリアミドイミド、それらいずれかの前駆体またはそれらの共重合体、および(b)アルコキシメチル基またはメチロール基を少なくとも2つ有する化合物を含有する。アルコキシメチル基およびメチロール基は、200℃以下の低温焼成でも、例えばフェノール骨格などに含まれるベンゼン環上の活性オルト・パラ位との反応や同種官能基同士の自己縮合反応を起こし、分子間を架橋する。一般的に行なわれている300℃以上の焼成プロセスから焼成温度の低温化を図る場合、架橋効率の低下によって硬化膜の機械強度が著しく低下する課題があるが、本発明においては、(a)成分と(b)成分の両方にアルコキシメチル基またはメチロール基を有することで、200℃以下の低温焼成においても架橋反応が効率的に進行するため、機械特性に優れた硬化膜を得ることができる。 The resin composition of the present invention comprises (a) polyimide having an alkoxymethyl group or methylol group, polybenzoxazole, polyamideimide, a precursor or copolymer thereof, and (b) an alkoxymethyl group or methylol. Contains compounds having at least two groups. Alkoxymethyl groups and methylol groups cause a reaction with active ortho / para positions on the benzene ring contained in the phenol skeleton and the like, and a self-condensation reaction between the same functional groups even at a low temperature firing of 200 ° C. or less, and Crosslink. In the case of reducing the firing temperature from a commonly performed firing process of 300 ° C. or higher, there is a problem that the mechanical strength of the cured film is significantly reduced due to a reduction in crosslinking efficiency. In the present invention, (a) Since both the component and the component (b) have an alkoxymethyl group or a methylol group, the crosslinking reaction proceeds efficiently even at a low-temperature firing of 200 ° C. or lower, so that a cured film having excellent mechanical properties can be obtained. .
本発明に用いられる(a)成分は、ポリイミド、ポリベンゾオキサゾール、ポリアミドイミド、それらいずれかの前駆体またはそれらの共重合体であり、アルコキシメチル基またはメチロール基を有する。以下、アルコキシメチル基とメチロール基を合わせて「メチロール系基」と呼ぶ。(a)成分は、メチロール系基を2つ以上有してもよく、2種以上のメチロール系基を有してもよい。また、本発明の樹脂組成物は(a)成分を2種以上含有してもよく、異なるメチロール系基を有する2種以上の(a)成分を含有してもよい。 The component (a) used in the present invention is polyimide, polybenzoxazole, polyamideimide, any precursor thereof or a copolymer thereof, and has an alkoxymethyl group or a methylol group. Hereinafter, the alkoxymethyl group and the methylol group are collectively referred to as “methylol group”. The component (a) may have two or more methylol groups and may have two or more methylol groups. Moreover, the resin composition of this invention may contain 2 or more types of (a) component, and may contain 2 or more types of (a) component which has a different methylol type | system | group group.
メチロール系基は、下記一般式(1)で表される。ただし、下記一般式(1)中、R1は水素原子またはアルキル基を表す。アルキル基は炭素数1〜10であることが好ましく、直鎖状でも分岐状でもよい。 The methylol group is represented by the following general formula (1). However, in the following general formula (1), R 1 represents a hydrogen atom or an alkyl group. The alkyl group preferably has 1 to 10 carbon atoms, and may be linear or branched.
また、メチロール系基は、架橋反応性の観点から、炭素環式および/または複素環式芳香族環や、窒素原子と共有結合していることが好ましい。以下、窒素原子とメチロール系基が共有結合している基を「N−メチロール系基」と呼ぶ。 The methylol group is preferably covalently bonded to a carbocyclic and / or heterocyclic aromatic ring or a nitrogen atom from the viewpoint of crosslinking reactivity. Hereinafter, a group in which a nitrogen atom and a methylol group are covalently bonded is referred to as an “N-methylol group”.
N−メチロール系基は、下記一般式で表されることが好ましい。ただし、下記一般式(2)中、R1は水素原子またはアルキル基を表し、R2は水素原子、水酸基またはアルキル基を表す。アルキル基は炭素数1〜10であることが好ましく、直鎖状でも分岐状でもよい。pは1〜2の整数、qは0〜1の整数を表し、p+q=2である。 The N-methylol group is preferably represented by the following general formula. However, in the following general formula (2), R 1 represents a hydrogen atom or an alkyl group, and R 2 represents a hydrogen atom, a hydroxyl group or an alkyl group. The alkyl group preferably has 1 to 10 carbon atoms, and may be linear or branched. p represents an integer of 1 to 2, q represents an integer of 0 to 1, and p + q = 2.
本発明に用いられる(a)成分は、ポリイミド、ポリベンゾオキサゾール、ポリアミドイミド、それらいずれかの前駆体またはそれらの共重合体である。 The component (a) used in the present invention is polyimide, polybenzoxazole, polyamideimide, any precursor thereof, or a copolymer thereof.
本発明に好ましく用いられるポリイミド前駆体としては、ポリアミド酸、ポリアミド酸エステル、ポリアミド酸アミド、ポリイソイミドなどを挙げることができる。例えば、ポリアミド酸は、テトラカルボン酸、対応するテトラカルボン酸二無水物、テトラカルボン酸ジエステルジクロリドなどとジアミン、対応するジイソシアネート化合物、トリメチルシリル化ジアミンを反応させて得ることができる。ポリイミドは、例えば、上記の方法で得たポリアミド酸を、加熱あるいは酸や塩基などの化学処理で脱水閉環することで得ることができる。 Examples of the polyimide precursor preferably used in the present invention include polyamic acid, polyamic acid ester, polyamic acid amide, and polyisoimide. For example, polyamic acid can be obtained by reacting tetracarboxylic acid, corresponding tetracarboxylic dianhydride, tetracarboxylic acid diester dichloride and the like with diamine, corresponding diisocyanate compound, and trimethylsilylated diamine. The polyimide can be obtained, for example, by dehydrating and ring-closing the polyamic acid obtained by the above method by heating or chemical treatment such as acid or base.
本発明に好ましく用いられるポリベンゾオキサゾール前駆体としては、ポリヒドロキシアミドを挙げることができる。例えば、ポリヒドロキシアミドは、ビスアミノフェノールとジカルボン酸、対応するジカルボン酸クロリド、ジカルボン酸活性エステルなどを反応させて得ることができる。ポリベンゾオキサゾールは、例えば、上記の方法で得たポリヒドロキシアミドを、加熱あるいは無水リン酸、塩基、カルボジイミド化合物などの化学処理で脱水閉環することで得ることができる。 Examples of the polybenzoxazole precursor preferably used in the present invention include polyhydroxyamide. For example, polyhydroxyamide can be obtained by reacting bisaminophenol with dicarboxylic acid, corresponding dicarboxylic acid chloride, dicarboxylic acid active ester, and the like. Polybenzoxazole can be obtained, for example, by dehydrating and ring-closing the polyhydroxyamide obtained by the above method by heating or chemical treatment of phosphoric anhydride, base, carbodiimide compound or the like.
本発明に好ましく用いられるポリアミドイミド前駆体は、例えば、トリカルボン酸、対応するトリカルボン酸無水物、トリカルボン酸無水物ハライドなどとジアミンやジイソシアネートを反応させて得ることができる。ポリアミドイミドは、例えば、上記の方法で得た前駆体を、加熱あるいは酸や塩基などの化学処理で脱水閉環することにより得ることができる。 The polyamideimide precursor preferably used in the present invention can be obtained, for example, by reacting diamine or diisocyanate with tricarboxylic acid, corresponding tricarboxylic acid anhydride, tricarboxylic acid anhydride halide or the like. Polyamideimide can be obtained, for example, by subjecting the precursor obtained by the above method to dehydration and ring closure by heating or chemical treatment such as acid or base.
本発明に用いられる(a)成分は、一般式(3)〜(6)のいずれかで表される構造単位を有することが好ましい。これらの構造単位を有する2種以上の樹脂を含有してもよいし、2種以上の構造単位を共重合してもよい。本発明における(a)成分の樹脂は、一般式(3)〜(6)のいずれかで表される構造単位を3〜1000有するものが好ましい。 The component (a) used in the present invention preferably has a structural unit represented by any one of the general formulas (3) to (6). Two or more kinds of resins having these structural units may be contained, or two or more kinds of structural units may be copolymerized. The resin of component (a) in the present invention preferably has 3 to 1000 structural units represented by any one of the general formulas (3) to (6).
一般式(3)〜(6)中、R3およびR6は4価の有機基、R4、R5およびR8は2価の有機基、R7は3価の有機基、R9は2〜4価の有機基、R10は2〜12価の有機基を表す。R3〜R10はいずれも芳香族環および/または脂肪族環を有するものが好ましい。R11は水素原子または炭素数1〜20の1価の炭化水素基を表す。rは0〜2の整数、sは0〜10の整数を表す。 In General Formulas (3) to (6), R 3 and R 6 are tetravalent organic groups, R 4 , R 5 and R 8 are divalent organic groups, R 7 is a trivalent organic group, and R 9 is A divalent to tetravalent organic group, R 10 represents a divalent to divalent organic group. R 3 to R 10 each preferably has an aromatic ring and / or an aliphatic ring. R 11 represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. r represents an integer of 0 to 2, and s represents an integer of 0 to 10.
一般式(3)〜(6)中、R3はテトラカルボン酸誘導体残基、R5はジカルボン酸誘導体残基、R7はトリカルボン酸誘導体残基、R9はジ−、トリ−またはテトラ−カルボン酸誘導体残基を表す。R3、R5、R7、R9を構成する酸成分としては、ジカルボン酸の例として、テレフタル酸、イソフタル酸、ジフェニルエーテルジカルボン酸、ビス(カルボキシフェニル)ヘキサフルオロプロパン、ビフェニルジカルボン酸、ベンゾフェノンジカルボン酸、トリフェニルジカルボン酸など、トリカルボン酸の例として、トリメリット酸、トリメシン酸、ジフェニルエーテルトリカルボン酸、ビフェニルトリカルボン酸、テトラカルボン酸の例として、ピロメリット酸、3,3’,4,4’−ビフェニルテトラカルボン酸、2,3,3’,4’−ビフェニルテトラカルボン酸、2,2’,3,3’−ビフェニルテトラカルボン酸、3,3’,4,4’−ベンゾフェノンテトラカルボン酸、2,2’,3,3’−ベンゾフェノンテトラカルボン酸、2,2−ビス(3,4−ジカルボキシフェニル)ヘキサフルオロプロパン、2,2−ビス(2,3−ジカルボキシフェニル)ヘキサフルオロプロパン、1,1−ビス(3,4−ジカルボキシフェニル)エタン、1,1−ビス(2,3−ジカルボキシフェニル)エタン、ビス(3,4−ジカルボキシフェニル)メタン、ビス(2,3−ジカルボキシフェニル)メタン、ビス(3,4−ジカルボキシフェニル)スルホン、ビス(3,4−ジカルボキシフェニル)エーテル、1,2,5,6−ナフタレンテトラカルボン酸、2,3,6,7−ナフタレンテトラカルボン酸、2,3,5,6−ピリジンテトラカルボン酸、3,4,9,10−ペリレンテトラカルボン酸などの芳香族テトラカルボン酸や、ブタンテトラカルボン酸、1,2,3,4−シクロペンタンテトラカルボン酸などの脂肪族テトラカルボン酸などを挙げることができる。また、上に例示したジカルボン酸、トリカルボン酸、テトラカルボン酸の水素原子の1〜10個、好ましくは1〜4個を、メチロール系基、水酸基、アルコキシル基、スルホン酸基またはチオール基で置換したものを挙げることができる。これらのうち、一般式(6)においては、トリカルボン酸、テトラカルボン酸のそれぞれ1つまたは2つのカルボキシル基がCOOR11基に相当する。これらの酸成分は、そのまま、あるいは酸無水物、活性エステルなどとして使用できる。また、これら2種以上の酸成分を組み合わせて用いてもよい。 In the general formulas (3) to (6), R 3 is a tetracarboxylic acid derivative residue, R 5 is a dicarboxylic acid derivative residue, R 7 is a tricarboxylic acid derivative residue, R 9 is di-, tri- or tetra- Represents a carboxylic acid derivative residue. Examples of the acid component constituting R 3 , R 5 , R 7 , and R 9 include terephthalic acid, isophthalic acid, diphenyl ether dicarboxylic acid, bis (carboxyphenyl) hexafluoropropane, biphenyl dicarboxylic acid, and benzophenone dicarboxylic acid. Examples of tricarboxylic acids such as acid and triphenyldicarboxylic acid include trimellitic acid, trimesic acid, diphenyl ether tricarboxylic acid, biphenyltricarboxylic acid, and tetracarboxylic acid as pyromellitic acid, 3,3 ′, 4,4′- Biphenyltetracarboxylic acid, 2,3,3 ′, 4′-biphenyltetracarboxylic acid, 2,2 ′, 3,3′-biphenyltetracarboxylic acid, 3,3 ′, 4,4′-benzophenonetetracarboxylic acid, 2,2 ′, 3,3′-benzophenonetetracarboxylic acid, 2 2-bis (3,4-dicarboxyphenyl) hexafluoropropane, 2,2-bis (2,3-dicarboxyphenyl) hexafluoropropane, 1,1-bis (3,4-dicarboxyphenyl) ethane, 1,1-bis (2,3-dicarboxyphenyl) ethane, bis (3,4-dicarboxyphenyl) methane, bis (2,3-dicarboxyphenyl) methane, bis (3,4-dicarboxyphenyl) Sulfone, bis (3,4-dicarboxyphenyl) ether, 1,2,5,6-naphthalenetetracarboxylic acid, 2,3,6,7-naphthalenetetracarboxylic acid, 2,3,5,6-pyridinetetra Aromatic tetracarboxylic acids such as carboxylic acid, 3,4,9,10-perylenetetracarboxylic acid, butanetetracarboxylic acid, 1,2,3,4-cyclo Examples thereof include aliphatic tetracarboxylic acids such as pentanetetracarboxylic acid. In addition, 1 to 10, preferably 1 to 4 hydrogen atoms of the dicarboxylic acid, tricarboxylic acid, and tetracarboxylic acid exemplified above were substituted with a methylol group, a hydroxyl group, an alkoxyl group, a sulfonic acid group, or a thiol group. Things can be mentioned. Among these, in the general formula (6), one or two carboxyl groups of tricarboxylic acid and tetracarboxylic acid each correspond to a COOR 11 group. These acid components can be used as they are or as acid anhydrides, active esters and the like. These two or more acid components may be used in combination.
一般式(3)〜(6)中、R4、R6、R8およびR10はジアミン誘導体残基を表す。R4、R6、R8、R10(OH)sを構成するジアミン成分の例としては、ビス(3−アミノ−4−ヒドロキシフェニル)ヘキサフルオロプロパン、ビス(3−アミノ−4−ヒドロキシフェニル)スルホン、ビス(3−アミノ−4−ヒドロキシフェニル)プロパン、ビス(3−アミノ−4−ヒドロキシフェニル)メチレン、ビス(3−アミノ−4−ヒドロキシフェニル)エーテル、ビス(3−アミノ−4−ヒドロキシ)ビフェニル、ビス(3−アミノ−4−ヒドロキシフェニル)フルオレンなどのヒドロキシル基含有ジアミン、3−スルホン酸−4,4’−ジアミノジフェニルエーテルなどのスルホン酸含有ジアミン、ジメルカプトフェニレンジアミンなどのチオール基含有ジアミン、3,4’−ジアミノジフェニルエーテル、4,4’−ジアミノジフェニルエーテル、3,4’−ジアミノジフェニルメタン、4,4’−ジアミノジフェニルメタン、3,4’−ジアミノジフェニルスルホン、4,4’−ジアミノジフェニルスルホン、3,4’−ジアミノジフェニルスルフィド、4,4’−ジアミノジフェニルスルフィド、1,4−ビス(4−アミノフェノキシ)ベンゼン、ベンジン、m−フェニレンジアミン、p−フェニレンジアミン、1,5−ナフタレンジアミン、2,6−ナフタレンジアミン、ビス(4−アミノフェノキシフェニル)スルホン、ビス(3−アミノフェノキシフェニル)スルホン、ビス(4−アミノフェノキシ)ビフェニル、ビス{4−(4−アミノフェノキシ)フェニル}エーテル、1,4−ビス(4−アミノフェノキシ)ベンゼン、2,2’−ジメチル−4,4’−ジアミノビフェニル、2,2’−ジエチル−4,4’−ジアミノビフェニル、3,3’−ジメチル−4,4’−ジアミノビフェニル、3,3’−ジエチル−4,4’−ジアミノビフェニル、2,2’,3,3’−テトラメチル−4,4’−ジアミノビフェニル、3,3’,4,4’−テトラメチル−4,4’−ジアミノビフェニル、2,2’−ビス(トリフルオロメチル)−4,4’−ジアミノビフェニルなどの芳香族ジアミンや、これらの芳香族環の水素原子の一部を、メチロール系基、炭素数1〜10のアルキル基やフルオロアルキル基、ハロゲン原子などで置換した化合物、シクロヘキシルジアミン、メチレンビスシクロヘキシルアミンなどの脂環式ジアミンなどを挙げることができる。これらのジアミンは、そのまま、あるいは対応するジイソシアネート化合物、トリメチルシリル化ジアミンとして使用できる。また、これら2種以上のジアミン成分を組み合わせて用いてもよい。耐熱性が要求される用途では、芳香族ジアミンをジアミン全体の50モル%以上使用することが好ましい。 In general formulas (3) to (6), R 4 , R 6 , R 8 and R 10 represent diamine derivative residues. Examples of the diamine component constituting R 4 , R 6 , R 8 , R 10 (OH) s include bis (3-amino-4-hydroxyphenyl) hexafluoropropane, bis (3-amino-4-hydroxyphenyl) ) Sulfone, bis (3-amino-4-hydroxyphenyl) propane, bis (3-amino-4-hydroxyphenyl) methylene, bis (3-amino-4-hydroxyphenyl) ether, bis (3-amino-4-) Hydroxyl) biphenyl, hydroxyl group-containing diamines such as bis (3-amino-4-hydroxyphenyl) fluorene, sulfonic acid-containing diamines such as 3-sulfonic acid-4,4′-diaminodiphenyl ether, and thiol groups such as dimercaptophenylenediamine Containing diamine, 3,4'-diaminodiphenyl ether, 4,4 ' Diaminodiphenyl ether, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfone, 3,4'-diaminodiphenylsulfide, 4,4 ' -Diaminodiphenyl sulfide, 1,4-bis (4-aminophenoxy) benzene, benzine, m-phenylenediamine, p-phenylenediamine, 1,5-naphthalenediamine, 2,6-naphthalenediamine, bis (4-aminophenoxy) Phenyl) sulfone, bis (3-aminophenoxyphenyl) sulfone, bis (4-aminophenoxy) biphenyl, bis {4- (4-aminophenoxy) phenyl} ether, 1,4-bis (4-aminophenoxy) benzene, 2,2'-dimethyl-4,4 ' -Diaminobiphenyl, 2,2'-diethyl-4,4'-diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminobiphenyl, 3,3'-diethyl-4,4'-diaminobiphenyl, 2, , 2 ′, 3,3′-tetramethyl-4,4′-diaminobiphenyl, 3,3 ′, 4,4′-tetramethyl-4,4′-diaminobiphenyl, 2,2′-bis (trifluoro Methyl) -4,4'-diaminobiphenyl and other aromatic diamines, and some of these aromatic ring hydrogen atoms are methylol-based groups, alkyl groups having 1 to 10 carbon atoms, fluoroalkyl groups, halogen atoms, etc. And alicyclic diamines such as cyclohexyldiamine and methylenebiscyclohexylamine. These diamines can be used as they are or as the corresponding diisocyanate compounds and trimethylsilylated diamines. Moreover, you may use combining these 2 or more types of diamine components. In applications where heat resistance is required, it is preferable to use an aromatic diamine in an amount of 50 mol% or more of the total diamine.
一般式(3)〜(6)のR3〜R10は、その骨格中にメチロール系基、フェノール性水酸基、スルホン酸基、チオール基などを含むことができる。この中でも、メチロール系基を有することによって、200℃以下の低温焼成における架橋効率がより向上するため好ましい。一方、アルカリ可溶性の観点から、フェノール性水酸基、スルホン酸基またはチオール基が好ましい。フェノール性水酸基、スルホン酸基またはチオール基を適度に有する樹脂を含有する樹脂組成物はアルカリ可溶性を有し、ポジ型またはネガ型の感光性樹脂組成物として好適に用いられる。 R 3 to R 10 in the general formulas (3) to (6) can include a methylol group, a phenolic hydroxyl group, a sulfonic acid group, a thiol group, and the like in the skeleton. Among these, having a methylol group is preferable because crosslinking efficiency in low-temperature firing at 200 ° C. or lower is further improved. On the other hand, a phenolic hydroxyl group, a sulfonic acid group or a thiol group is preferred from the viewpoint of alkali solubility. A resin composition containing a resin having a phenolic hydroxyl group, a sulfonic acid group or a thiol group in an appropriate amount has alkali solubility and is suitably used as a positive or negative photosensitive resin composition.
本発明の樹脂組成物をアルカリ可溶性の感光性樹脂組成物として用いる場合、構造単位中にフッ素原子を有することが好ましい。フッ素原子により、アルカリ現像の際に膜の表面に撥水性が付与され、表面からのしみこみなどを抑えることができる。(a)成分中のフッ素原子含有量は、界面のしみこみ防止効果を充分得るために10重量%以上が好ましく、また、アルカリ水溶液に対する溶解性の点から20重量%以下が好ましい。 When using the resin composition of this invention as an alkali-soluble photosensitive resin composition, it is preferable to have a fluorine atom in a structural unit. The fluorine atom imparts water repellency to the surface of the film during alkali development, and soaking in from the surface can be suppressed. The fluorine atom content in the component (a) is preferably 10% by weight or more in order to sufficiently obtain the effect of preventing the penetration of the interface, and is preferably 20% by weight or less from the viewpoint of solubility in an aqueous alkali solution.
また、耐熱性を低下させない範囲で、R4、R8またはR10にシロキサン構造を有する脂肪族の基を共重合してもよく、基板との接着性を向上させることができる。具体的には、ジアミン成分として、ビス(3−アミノプロピル)テトラメチルジシロキサン、ビス(p−アミノフェニル)オクタメチルペンタシロキサンなどを1〜10モル%共重合したものなどが挙げられる。 In addition, an aliphatic group having a siloxane structure may be copolymerized with R 4 , R 8, or R 10 as long as the heat resistance is not lowered, and the adhesion to the substrate can be improved. Specific examples of the diamine component include those obtained by copolymerizing 1 to 10 mol% of bis (3-aminopropyl) tetramethyldisiloxane, bis (p-aminophenyl) octamethylpentasiloxane, and the like.
また、樹脂組成物の保存安定性を向上させるため、(a)成分の樹脂は主鎖末端をモノアミン、酸無水物、モノカルボン酸、モノ酸クロリド化合物、モノ活性エステル化合物などの末端封止剤で封止することが好ましい。末端封止剤として用いられるモノアミンの導入割合は、全アミン成分に対して、好ましくは0.1モル%以上、特に好ましくは5モル%以上であり、好ましくは60モル%以下、特に好ましくは50モル%以下である。末端封止剤として用いられる酸無水物、モノカルボン酸、モノ酸クロリド化合物またはモノ活性エステル化合物の導入割合は、ジアミン成分に対して、好ましくは0.1モル%以上、特に好ましくは5モル%以上であり、好ましくは100モル%以下、特に好ましくは90モル%以下である。複数の末端封止剤を反応させることにより、複数の異なる末端基を導入してもよい。 In addition, in order to improve the storage stability of the resin composition, the resin as the component (a) has an end-capping agent such as a monoamine, acid anhydride, monocarboxylic acid, monoacid chloride compound, or monoactive ester compound at the main chain terminal. It is preferable to seal with. The introduction ratio of the monoamine used as the terminal blocking agent is preferably 0.1 mol% or more, particularly preferably 5 mol% or more, preferably 60 mol% or less, particularly preferably 50, based on the total amine component. It is less than mol%. The introduction ratio of the acid anhydride, monocarboxylic acid, monoacid chloride compound or monoactive ester compound used as the end-capping agent is preferably 0.1 mol% or more, particularly preferably 5 mol%, relative to the diamine component. Or more, preferably 100 mol% or less, particularly preferably 90 mol% or less. A plurality of different end groups may be introduced by reacting a plurality of end-capping agents.
モノアミンとしては、アニリン、2−エチニルアニリン、3−エチニルアニリン、4−エチニルアニリン、5−アミノ−8−ヒドロキシキノリン、1−ヒドロキシ−7−アミノナフタレン、1−ヒドロキシ−6−アミノナフタレン、1−ヒドロキシ−5−アミノナフタレン、1−ヒドロキシ−4−アミノナフタレン、2−ヒドロキシ−7−アミノナフタレン、2−ヒドロキシ−6−アミノナフタレン、2−ヒドロキシ−5−アミノナフタレン、1−カルボキシ−7−アミノナフタレン、1−カルボキシ−6−アミノナフタレン、1−カルボキシ−5−アミノナフタレン、2−カルボキシ−7−アミノナフタレン、2−カルボキシ−6−アミノナフタレン、2−カルボキシ−5−アミノナフタレン、2−アミノ安息香酸、3−アミノ安息香酸、4−アミノ安息香酸、4−アミノサリチル酸、5−アミノサリチル酸、6−アミノサリチル酸、2−アミノベンゼンスルホン酸、3−アミノベンゼンスルホン酸、4−アミノベンゼンスルホン酸、3−アミノ−4,6−ジヒドロキシピリミジン、2−アミノフェノール、3−アミノフェノール、4−アミノフェノール、2−アミノチオフェノール、3−アミノチオフェノール、4−アミノチオフェノールなどが好ましい。これらを2種以上用いてもよい。 Monoamines include aniline, 2-ethynylaniline, 3-ethynylaniline, 4-ethynylaniline, 5-amino-8-hydroxyquinoline, 1-hydroxy-7-aminonaphthalene, 1-hydroxy-6-aminonaphthalene, 1- Hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 2-hydroxy-7-aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2-hydroxy-5-aminonaphthalene, 1-carboxy-7-amino Naphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy-5-aminonaphthalene, 2-carboxy-7-aminonaphthalene, 2-carboxy-6-aminonaphthalene, 2-carboxy-5-aminonaphthalene, 2-amino Benzoic acid, 3-aminobenzoic acid, -Aminobenzoic acid, 4-aminosalicylic acid, 5-aminosalicylic acid, 6-aminosalicylic acid, 2-aminobenzenesulfonic acid, 3-aminobenzenesulfonic acid, 4-aminobenzenesulfonic acid, 3-amino-4,6-dihydroxy Pyrimidine, 2-aminophenol, 3-aminophenol, 4-aminophenol, 2-aminothiophenol, 3-aminothiophenol, 4-aminothiophenol and the like are preferable. Two or more of these may be used.
酸無水物、モノカルボン酸、モノ酸クロリド化合物、モノ活性エステル化合物としては、無水フタル酸、無水マレイン酸、ナジック酸無水物、シクロヘキサンジカルボン酸無水物、3−ヒドロキシフタル酸無水物などの酸無水物、3−カルボキシフェノール、4−カルボキシフェノール、3−カルボキシチオフェノール、4−カルボキシチオフェノール、1−ヒドロキシ−7−カルボキシナフタレン、1−ヒドロキシ−6−カルボキシナフタレン、1−ヒドロキシ−5−カルボキシナフタレン、1−メルカプト−7−カルボキシナフタレン、1−メルカプト−6−カルボキシナフタレン、1−メルカプト−5−カルボキシナフタレン、3−カルボキシベンゼンスルホン酸、4−カルボキシベンゼンスルホン酸などのモノカルボン酸類およびこれらのカルボキシル基が酸クロリド化したモノ酸クロリド化合物、テレフタル酸、フタル酸、マレイン酸、シクロヘキサンジカルボン酸、1,5−ジカルボキシナフタレン、1,6−ジカルボキシナフタレン、1,7−ジカルボキシナフタレン、2,6−ジカルボキシナフタレンなどのジカルボン酸類の一方のカルボキシル基だけが酸クロリド化したモノ酸クロリド化合物、モノ酸クロリド化合物とN−ヒドロキシベンゾトリアゾールやN−ヒドロキシ−5−ノルボルネン−2,3−ジカルボキシイミドとの反応により得られる活性エステル化合物などが好ましい。これらを2種以上用いてもよい。 Acid anhydrides such as phthalic anhydride, maleic anhydride, nadic anhydride, cyclohexanedicarboxylic anhydride, 3-hydroxyphthalic anhydride, etc., as acid anhydrides, monocarboxylic acids, monoacid chloride compounds, monoactive ester compounds Product, 3-carboxyphenol, 4-carboxyphenol, 3-carboxythiophenol, 4-carboxythiophenol, 1-hydroxy-7-carboxynaphthalene, 1-hydroxy-6-carboxynaphthalene, 1-hydroxy-5-carboxynaphthalene Monocarboxylic acids such as 1-mercapto-7-carboxynaphthalene, 1-mercapto-6-carboxynaphthalene, 1-mercapto-5-carboxynaphthalene, 3-carboxybenzenesulfonic acid, 4-carboxybenzenesulfonic acid and the like; Mono-acid chloride compounds in which the carboxyl group is converted to acid chloride, terephthalic acid, phthalic acid, maleic acid, cyclohexanedicarboxylic acid, 1,5-dicarboxynaphthalene, 1,6-dicarboxynaphthalene, 1,7-dicarboxynaphthalene , Monoacid chloride compounds in which only one carboxyl group of dicarboxylic acids such as 2,6-dicarboxynaphthalene is acid chloride, monoacid chloride compounds and N-hydroxybenzotriazole or N-hydroxy-5-norbornene-2,3 -Active ester compounds obtained by reaction with dicarboximide are preferred. Two or more of these may be used.
また、メチロール系基を有する末端封止剤で封止することにより、樹脂末端にメチロール系基を導入することができる。末端基導入の容易さおよび設計の自由度の高さの観点から、本発明において、(a)成分のメチロール系基を末端基として導入することが好ましい。 Moreover, a methylol group can be introduce | transduced into the resin terminal by sealing with the terminal blocker which has a methylol group. In the present invention, it is preferable to introduce the methylol group of the component (a) as a terminal group from the viewpoint of ease of terminal group introduction and high degree of design freedom.
メチロール系基を有する末端封止剤は特に構造は限定されないが、メチロール系基の架橋反応性の観点から、炭素環式または複素環式芳香族環にメチロール系基、N−メチロール化アミノ基またはN−アルコキシメチル化アミノ基が共有結合した構造、N−メチロール化アミド構造、N−アルコキシメチル化アミド構造、N−メチロール化尿素構造、またはN−アルコキシメチル化尿素構造を含有することが好ましい。これらの中でも特に好ましいものとして、芳香環上の位置異性体も含めて、モノアミンとして、アミノベンジルアルコール、メトキシメチルアニリン、ビス(ヒドロキシメチル)アニリン、ビス(メトキシメチル)アニリン、(N,N−ビス(ヒドロキシメチル)アミノ)アニリン、(N,N−ビス(メトキシメチル)アミノ)アニリン、酸無水物として、ヒドロキシメチル無水フタル酸、メトキシメチル無水フタル酸、ビス(ヒドロキシメチル)無水フタル酸、ビス(メトキシメチル)無水フタル酸、(N,N−ビス(ヒドロキシメチル)アミノ)無水フタル酸、(N,N−ビス(メトキシメチル)アミノ)無水フタル酸やこれらの芳香環の水素原子の一部を炭素数1〜4のアルキル基やフルオロアルキル基、水酸基、炭素数1〜4のアルコキシル基などで置換したものが挙げられるが、これらに限定されるものではない。 The structure of the end-capping agent having a methylol group is not particularly limited, but from the viewpoint of crosslinking reactivity of the methylol group, a methylol group, an N-methylolated amino group or a carbocyclic or heterocyclic aromatic ring is added. It preferably contains a structure in which an N-alkoxymethylated amino group is covalently bonded, an N-methylolated amide structure, an N-alkoxymethylated amide structure, an N-methylolated urea structure, or an N-alkoxymethylated urea structure. Among these, particularly preferred are aminobenzyl alcohol, methoxymethylaniline, bis (hydroxymethyl) aniline, bis (methoxymethyl) aniline, and (N, N-bis) as monoamines, including positional isomers on the aromatic ring. (Hydroxymethyl) amino) aniline, (N, N-bis (methoxymethyl) amino) aniline, as acid anhydride, hydroxymethyl phthalic anhydride, methoxymethyl phthalic anhydride, bis (hydroxymethyl) phthalic anhydride, bis ( Methoxymethyl) phthalic anhydride, (N, N-bis (hydroxymethyl) amino) phthalic anhydride, (N, N-bis (methoxymethyl) amino) phthalic anhydride and a part of hydrogen atoms of these aromatic rings C1-C4 alkyl group, fluoroalkyl group, hydroxyl group, C1-C4 alkyl It includes those substituted with such a hexyl group, but is not limited thereto.
メチロール系基を末端基として導入する場合、多官能のメチロール系基含有末端封止剤を用いることで、1つの末端に2つ以上のメチロール系基を導入することができる。末端にこれらの基を複数有することで200℃以下の低温焼成においても架橋反応が効率的に進行し、より機械特性に優れた硬化膜を得ることができる。 When a methylol group is introduced as a terminal group, two or more methylol groups can be introduced at one terminal by using a polyfunctional methylol group-containing terminal blocker. By having a plurality of these groups at the terminal, the crosslinking reaction proceeds efficiently even at low temperature baking of 200 ° C. or lower, and a cured film having more excellent mechanical properties can be obtained.
本発明において(a)成分へのメチロール系基の導入方法に制限はない。例えば、上記のように酸成分、ジアミン成分、末端封止剤にメチロール系基を有するモノマーを用いて重合する方法、樹脂を酸性または塩基性条件下でホルムアルデヒドと反応させてメチロール基を導入する方法、樹脂を2つ以上のメチロール系基を有する化合物と反応を制御した上で一部のメチロール系基と反応させる方法などが挙げられる。 In the present invention, the method for introducing a methylol group into the component (a) is not limited. For example, as described above, a method of polymerizing using a monomer having a methylol group as an acid component, a diamine component, or an end-capping agent, a method of introducing a methylol group by reacting a resin with formaldehyde under acidic or basic conditions And a method of reacting a resin with some methylol group after controlling the reaction with a compound having two or more methylol groups.
また、(a)成分の樹脂に導入された末端封止剤は、以下の方法で容易に検出できる。例えば、末端封止剤が導入された樹脂を、酸性溶液に溶解し、構成単位であるアミン成分と酸無水物成分に分解し、これをガスクロマトグラフィー(GC)や、NMR測定することにより、本発明に使用の末端封止剤を容易に検出できる。これとは別に、末端封止剤が導入された樹脂成分を直接、熱分解ガスクロマトグラフ(PGC)や赤外スペクトルおよび13C−NMRスペクトルで測定することによっても、容易に検出可能である。 Moreover, the terminal blocker introduce | transduced into resin of (a) component can be easily detected with the following method. For example, a resin having a terminal blocking agent introduced therein is dissolved in an acidic solution and decomposed into an amine component and an acid anhydride component as structural units, and this is measured by gas chromatography (GC) or NMR measurement. The end-capping agent used in the present invention can be easily detected. Apart from this, the resin component into which the end-capping agent has been introduced can also be easily detected by directly measuring it with a pyrolysis gas chromatograph (PGC), infrared spectrum and 13 C-NMR spectrum.
一般式(3)〜(5)のいずれかで表される構造単位を有する樹脂において、構造単位の繰り返し数は3以上200以下が好ましい。また、一般式(6)で表される構造単位を有する樹脂において、構造単位の繰り返し数は10以上1000以下が好ましい。この範囲であれば、厚膜を容易に形成することができる。 In the resin having the structural unit represented by any one of the general formulas (3) to (5), the number of repeating structural units is preferably 3 or more and 200 or less. In the resin having the structural unit represented by the general formula (6), the number of repeating structural units is preferably 10 or more and 1000 or less. If it is this range, a thick film can be formed easily.
本発明に用いられる(a)成分は、一般式(3)〜(6)のいずれかで表される構造単位のみからなるものであってもよいし、他の構造単位との共重合体あるいは混合体であってもよい。その際、一般式(3)〜(6)のいずれかで表される構造単位を樹脂全体の10重量%以上含有することが好ましく、30重量%以上がより好ましい。共重合あるいは混合に用いられる構造単位の種類および量は、最終加熱処理によって得られる薄膜の機械特性を損なわない範囲で選択することが好ましい。このような主鎖骨格としては例えば、ベンゾイミダゾール、ベンゾチアゾールなどが挙げられる。 The component (a) used in the present invention may consist only of the structural unit represented by any one of the general formulas (3) to (6), or may be a copolymer with another structural unit or A mixture may be sufficient. At that time, the structural unit represented by any one of the general formulas (3) to (6) is preferably contained in an amount of 10% by weight or more, more preferably 30% by weight or more based on the whole resin. The type and amount of structural units used for copolymerization or mixing are preferably selected within a range that does not impair the mechanical properties of the thin film obtained by the final heat treatment. Examples of such a main chain skeleton include benzimidazole and benzothiazole.
本発明に用いられる(a)成分は、フェノール性水酸基を(a)1kg中1〜4モル含有することが好ましい。フェノール性水酸基量をこの範囲にすることで、樹脂および(b)成分の架橋性化合物に含まれるメチロール系基と効率的に架橋反応を起こして、硬化膜の機械特性をより向上させることができる。また、樹脂の溶剤溶解性が向上することで、重合反応中の樹脂の析出およびゲル化の抑制や樹脂組成物の保存安定性の向上、また感光性樹脂組成物として用いる場合のアルカリ可溶性を適切にすることができる。1.5〜3モル/kgがより好ましい。フェノール性水酸基の導入箇所は側鎖でも末端でもよいが、少なくとも側鎖に含まれることが好ましく、その導入数は一般式(3)〜(6)のいずれかで表される構造単位当たり0.5以上が好ましい。 The component (a) used in the present invention preferably contains 1 to 4 mol of phenolic hydroxyl group in 1 kg of (a). By setting the amount of phenolic hydroxyl group within this range, it is possible to efficiently cause a crosslinking reaction with the methylol group contained in the resin and the crosslinkable compound of the component (b), thereby further improving the mechanical properties of the cured film. . In addition, by improving the solvent solubility of the resin, it is possible to suppress the precipitation and gelation of the resin during the polymerization reaction, to improve the storage stability of the resin composition, and to be suitable for alkali solubility when used as a photosensitive resin composition. Can be. More preferably, it is 1.5-3 mol / kg. The introduction site of the phenolic hydroxyl group may be a side chain or a terminal, but is preferably contained at least in the side chain, and the number of introductions is 0.00 per structural unit represented by any one of the general formulas (3) to (6). 5 or more is preferable.
(a)成分中のフェノール性水酸基量は、重合時のモノマー組成がわかる場合は、各モノマーの分子量およびフェノール性水酸基数と、理論的に生成するポリマー構造とから計算によって求めることができるし、以下の方法で測定によって求めることもできる。(a)成分の樹脂を例えばジメチルスルホキシド−d6などの適当な重溶媒に溶解させ、1H−NMR測定を行なう。フェノール性水酸基由来のピークは、トリエチルアミンなどの塩基を少量添加することで同定できる。フェノール性水酸基量は、例えば、芳香環由来のピークや適当な内部標準のピークとの積分比から求めることができる。 The amount of phenolic hydroxyl group in component (a) can be determined by calculation from the molecular weight of each monomer and the number of phenolic hydroxyl groups and the theoretically generated polymer structure when the monomer composition at the time of polymerization is known. It can also be determined by measurement in the following manner. The resin of component (a) is dissolved in a suitable heavy solvent such as dimethyl sulfoxide-d 6 and 1 H-NMR measurement is performed. A peak derived from a phenolic hydroxyl group can be identified by adding a small amount of a base such as triethylamine. The amount of the phenolic hydroxyl group can be determined, for example, from an integration ratio with a peak derived from an aromatic ring or an appropriate internal standard peak.
本発明の樹脂組成物は、(b)アルコキシメチル基またはメチロール基を少なくとも2つ有する化合物を含有する。これらメチロール系基を少なくとも2つ有することで、樹脂および同種分子と縮合反応して架橋構造体とすることができる。本発明の樹脂組成物は(a)成分と(b)成分を用いることで200℃以下の低温焼成時においても架橋反応が効率的に進行し、機械特性に優れた硬化膜を得ることができる。 The resin composition of the present invention contains (b) a compound having at least two alkoxymethyl groups or methylol groups. By having at least two of these methylol groups, it is possible to obtain a crosslinked structure by condensation reaction with the resin and the same kind of molecule. In the resin composition of the present invention, by using the component (a) and the component (b), the crosslinking reaction efficiently proceeds even at a low temperature baking of 200 ° C. or lower, and a cured film having excellent mechanical properties can be obtained. .
このような化合物の好ましい例としては、例えば、DML−PC、DML−PEP、DML−OC、DML−OEP、DML−34X、DML−PTBP、DML−PCHP、DML−OCHP、DML−PFP、DML−PSBP、DML−POP、DML−MBOC、DML−MBPC、DML−MTrisPC、DML−BisOC−Z、DML−BisOCHP−Z、DML−BPC、DML−BisOC−P、DMOM−PC、DMOM−PTBP、DMOM−MBPC、TriML−P、TriML−35XL、TML−HQ、TML−BP、TML−pp−BPF、TML−BPE、TML−BPA、TML−BPAF、TML−BPAP、TMOM−BP、TMOM−BPE、TMOM−BPA、TMOM−BPAF、TMOM−BPAP、HML−TPPHBA、HML−TPHAP、HMOM−TPPHBA、HMOM−TPHAP(以上、商品名、本州化学工業(株)製)、“NIKALAC(登録商標)”MX−290、“NIKALAC”MX−280、“NIKALAC”MX−270、“NIKALAC”MX−279、“NIKALAC”MW−100LM、“NIKALAC”MX−750LM(以上、商品名、(株)三和ケミカル製)が挙げられる。これらを2種以上含有してもよい。以下にこれらの構造を示す。 Preferred examples of such a compound include, for example, DML-PC, DML-PEP, DML-OC, DML-OEP, DML-34X, DML-PTBP, DML-PCHP, DML-OCHP, DML-PFP, DML- PSBP, DML-POP, DML-MBOC, DML-MBPC, DML-MTrisPC, DML-BisOC-Z, DML-BisOCHP-Z, DML-BPC, DML-BisOC-P, DMOM-PC, DMOM-PTBP, DMOM- MBPC, TriML-P, TriML-35XL, TML-HQ, TML-BP, TML-pp-BPF, TML-BPE, TML-BPA, TML-BPAF, TML-BPAP, TMOM-BP, TMOM-BPE, TMOM- BPA, TMOM-BPAF, TM M-BPAP, HML-TPPHBA, HML-TPPHAP, HMOM-TPPHBA, HMOM-TPPHAP (above, trade name, manufactured by Honshu Chemical Industry Co., Ltd.), “NIKALAC (registered trademark)” MX-290, “NIKACALAC” MX- 280, "NIKACALAC" MX-270, "NIKACALAC" MX-279, "NIKACALAC" MW-100LM, "NIKACALAC" MX-750LM (trade name, manufactured by Sanwa Chemical Co., Ltd.). Two or more of these may be contained. These structures are shown below.
(b)メチロール系基を少なくとも2つ有する化合物の含有量は、(a)成分の樹脂100重量部に対して、好ましくは0.5重量部以上、より好ましくは1重量部以上、より好ましくは30重量部以上であり、好ましくは300重量部以下、より好ましくは200重量部以下である。(b)成分の含有量をこの範囲にすることで、低温でも充分な架橋が進行して硬化膜の機械特性がより向上する。 The content of the compound (b) having at least two methylol-based groups is preferably 0.5 parts by weight or more, more preferably 1 part by weight or more, more preferably 100 parts by weight of the resin of the component (a). 30 parts by weight or more, preferably 300 parts by weight or less, more preferably 200 parts by weight or less. By setting the content of the component (b) within this range, sufficient crosslinking proceeds even at a low temperature, and the mechanical properties of the cured film are further improved.
本発明の樹脂組成物は、(c)熱酸発生剤を含有することが好ましい。(c)熱酸発生剤は、加熱により酸を発生し、(a)成分の樹脂および(b)成分に含まれるメチロール系基の架橋反応を促進する他、未閉環のイミド環、オキサゾール環の環化を促進し、硬化膜の機械特性をより向上させることができる。 The resin composition of the present invention preferably contains (c) a thermal acid generator. (C) The thermal acid generator generates an acid by heating, promotes the crosslinking reaction of the resin of component (a) and the methylol-based group contained in component (b), and forms an unclosed imide ring or oxazole ring. Cyclization can be promoted and the mechanical properties of the cured film can be further improved.
(c)熱酸発生剤の熱分解開始温度は、50℃〜270℃が好ましく、200℃以下がより好ましい。また、本発明の樹脂組成物を感光性樹脂組成物として用いる場合には、樹脂組成物を基板に塗布した後の乾燥(プリベーク:約70〜140℃)時には酸を発生せず、その後の露光、現像でパターニングした後の最終加熱(キュア:約100〜400℃)時に酸を発生するものを選択すると、現像時の感度低下を抑制できるため好ましい。 (C) The thermal decomposition starting temperature of the thermal acid generator is preferably 50 ° C. to 270 ° C., more preferably 200 ° C. or less. Moreover, when using the resin composition of this invention as a photosensitive resin composition, an acid is not generated at the time of drying (prebaking: about 70-140 degreeC) after apply | coating a resin composition to a board | substrate, and exposure after that. It is preferable to select one that generates an acid at the time of final heating (cure: about 100 to 400 ° C.) after patterning by development, because a reduction in sensitivity at the time of development can be suppressed.
(c)成分から発生する酸は強酸が好ましく、例えば、p−トルエンスルホン酸、ベンゼンスルホン酸などのアリールスルホン酸、メタンスルホン酸、エタンスルホン酸、ブタンスルホン酸などのアルキルスルホン酸やトリフルオロメチルスルホン酸などのハロアルキルスルホン酸などが好ましい。これらはオニウム塩のような塩として、またはイミドスルホナートのような共有結合化合物として用いられる。これらを2種以上含有してもよい。 The acid generated from the component (c) is preferably a strong acid. For example, arylsulfonic acid such as p-toluenesulfonic acid and benzenesulfonic acid, alkylsulfonic acid such as methanesulfonic acid, ethanesulfonic acid and butanesulfonic acid, and trifluoromethyl. Haloalkyl sulfonic acids such as sulfonic acid are preferred. These are used as salts such as onium salts or as covalently bonded compounds such as imidosulfonates. Two or more of these may be contained.
(c)熱酸発生剤の含有量は、(a)成分の樹脂100重量部に対して0.01重量部以上が好ましく、0.1重量部以上がより好ましく、0.5重量部以上がさらに好ましい。0.01重量部以上含有することで、架橋反応および樹脂の未閉環構造の環化が促進されるため、硬化膜の機械特性および耐薬品性をより向上させることができる。また、硬化膜の電気絶縁性の観点から、20重量部以下が好ましく、15重量部以下がより好ましく、10重量部以下がより好ましい。 (C) The content of the thermal acid generator is preferably 0.01 parts by weight or more, more preferably 0.1 parts by weight or more, and 0.5 parts by weight or more with respect to 100 parts by weight of the resin (a). Further preferred. By containing 0.01 part by weight or more, the cross-linking reaction and the cyclization of the unclosed structure of the resin are promoted, so that the mechanical properties and chemical resistance of the cured film can be further improved. Moreover, from a viewpoint of the electrical insulation of a cured film, 20 weight part or less is preferable, 15 weight part or less is more preferable, and 10 weight part or less is more preferable.
本発明の樹脂組成物は、さらに(d)光酸発生剤を含有してもよい。(d)光酸発生剤を含有することにより、ポジ型またはネガ型のパターン形成が可能になる。紫外線露光部に酸が発生し、露光部のアルカリ水溶液に対する溶解性が増大するため、特にポジ型感光性樹脂組成物として好ましく用いられる。 The resin composition of the present invention may further contain (d) a photoacid generator. (D) By containing a photoacid generator, a positive or negative pattern can be formed. Since an acid is generated in the ultraviolet-exposed area and the solubility of the exposed area in an alkaline aqueous solution is increased, it is particularly preferably used as a positive photosensitive resin composition.
本発明に用いられる(d)光酸発生剤としては、キノンジアジド化合物、スルホニウム塩、ホスホニウム塩、ジアゾニウム塩、ヨードニウム塩などが挙げられる。中でも優れた溶解抑止効果を発現し、高感度かつ低膜減りの感光性樹脂組成物を得られるという点から、キノンジアジド化合物が好ましく用いられる。また、光酸発生剤を2種以上含有してもよい。これにより、露光部と未露光部の溶解速度の比をより大きくすることができ、高感度な感光性樹脂組成物を得ることができる。 Examples of the (d) photoacid generator used in the present invention include quinonediazide compounds, sulfonium salts, phosphonium salts, diazonium salts, and iodonium salts. Among these, a quinonediazide compound is preferably used because it exhibits an excellent dissolution inhibiting effect and a photosensitive resin composition having high sensitivity and low film thickness can be obtained. Moreover, you may contain 2 or more types of photo-acid generators. Thereby, the ratio of the dissolution rate of an exposed part and an unexposed part can be enlarged more, and a highly sensitive photosensitive resin composition can be obtained.
キノンジアジド化合物としては、ポリヒドロキシ化合物にキノンジアジドのスルホン酸がエステルで結合したもの、ポリアミノ化合物にキノンジアジドのスルホン酸がスルホンアミド結合したもの、ポリヒドロキシポリアミノ化合物にキノンジアジドのスルホン酸がエステル結合および/またはスルホンアミド結合したものなどが挙げられる。これらポリヒドロキシ化合物やポリアミノ化合物の全ての官能基がキノンジアジドで置換されていなくても良いが、官能基全体の50モル%以上がキノンジアジドで置換されていることが好ましい。このようなキノンジアジド化合物を用いることで、一般的な紫外線である水銀灯のi線(365nm)、h線(405nm)、g線(436nm)に感光するポジ型の感光性樹脂組成物を得ることができる。 As quinonediazide compounds, quinonediazide sulfonic acid is bonded to a polyhydroxy compound with an ester, quinonediazide sulfonic acid is bonded to a polyamino compound with a sulfonamide bond, and a quinonediazide sulfonic acid is bonded to a polyhydroxypolyamino compound with an ester bond and / or sulfone. Examples include amide-bonded ones. Although all the functional groups of these polyhydroxy compounds and polyamino compounds may not be substituted with quinonediazide, it is preferable that 50 mol% or more of the entire functional groups are substituted with quinonediazide. By using such a quinonediazide compound, it is possible to obtain a positive photosensitive resin composition that is sensitive to i-line (365 nm), h-line (405 nm), and g-line (436 nm) of a mercury lamp that is a general ultraviolet ray. it can.
本発明において、キノンジアジド化合物は5−ナフトキノンジアジドスルホニル基、4−ナフトキノンジアジドスルホニル基のいずれも好ましく用いられる。同一分子中にこれらの基を両方有する化合物を用いてもよいし、異なる基を用いた化合物を併用してもよい。 In the present invention, the quinonediazide compound is preferably a 5-naphthoquinonediazidesulfonyl group or a 4-naphthoquinonediazidesulfonyl group. A compound having both of these groups in the same molecule may be used, or a compound using different groups may be used in combination.
本発明に用いられるキノンジアジド化合物は、特定のフェノール化合物から、次の方法により合成される。例えば5−ナフトキノンジアジドスルホニルクロライドとフェノール化合物をトリエチルアミン存在下で反応させる方法が挙げられる。フェノール化合物の合成方法は、酸触媒下で、α−(ヒドロキシフェニル)スチレン誘導体を多価フェノール化合物と反応させる方法などが挙げられる。 The quinonediazide compound used in the present invention is synthesized from a specific phenol compound by the following method. For example, a method of reacting 5-naphthoquinonediazide sulfonyl chloride and a phenol compound in the presence of triethylamine can be mentioned. Examples of the method for synthesizing a phenol compound include a method in which an α- (hydroxyphenyl) styrene derivative is reacted with a polyhydric phenol compound under an acid catalyst.
(d)光酸発生剤の含有量は、(a)成分の樹脂100重量部に対して、好ましくは3〜40重量部である。光酸発生剤の含有量をこの範囲とすることにより、より高感度化を図ることができる。さらに増感剤などを必要に応じて含有してもよい。 (D) Content of a photo-acid generator becomes like this. Preferably it is 3-40 weight part with respect to 100 weight part of resin of (a) component. By setting the content of the photoacid generator within this range, higher sensitivity can be achieved. Furthermore, you may contain a sensitizer etc. as needed.
本発明の樹脂組成物は、さらに(e)不飽和結合を有する重合性化合物および(f)光重合開始剤を含有してもよい。(e)不飽和結合を有する重合性化合物および(f)光重合開始剤を含有することにより、紫外線露光およびその後の加熱処理によって露光部がアルカリまたは有機の現像液に不溶化するため、ネガ型のパターン形成が可能になる。 The resin composition of the present invention may further contain (e) a polymerizable compound having an unsaturated bond and (f) a photopolymerization initiator. (E) By containing a polymerizable compound having an unsaturated bond and (f) a photopolymerization initiator, the exposed portion is insolubilized in an alkali or organic developer by ultraviolet exposure and subsequent heat treatment. Pattern formation is possible.
(e)不飽和結合を有する重合性化合物において、不飽和結合を含む基としては、例えば、ビニル基、アリル基、アクリロイル基、メタクリロイル基などの不飽和二重結合官能基、プロパルギル基などの不飽和三重結合官能基が挙げられる。これらを2種以上有してもよい。これらの中でも、共役型のビニル基やアクリロイル基、メタクリロイル基が重合性の面で好ましい。また、安定性の点から、これらの不飽和結合を有する基を1分子中に1〜4個有することが好ましい。 (E) In a polymerizable compound having an unsaturated bond, examples of the group containing an unsaturated bond include unsaturated double bond functional groups such as vinyl, allyl, acryloyl, and methacryloyl groups, and propargyl groups. Saturated triple bond functional groups are mentioned. You may have 2 or more types of these. Among these, a conjugated vinyl group, an acryloyl group, and a methacryloyl group are preferable in terms of polymerizability. Moreover, it is preferable to have 1-4 groups which have these unsaturated bonds in a molecule | numerator from a stability point.
(e)不飽和結合を有する重合性化合物としては、例えば、ジエチレングリコールジアクリレート、トリエチレングリコールジアクリレート、テトラエチレングリコールジアクリレート、ジエチレングリコールジメタクリレート、トリエチレングリコールジメタクリレート、テトラエチレングリコールジメタクリレート、トリメチロールプロパンジアクリレート、トリメチロールプロパントリアクリレート、トリメチロールプロパンジメタクリレート、トリメチロールプロパントリメタクリレート、スチレン、α−メチルスチレン、1,2−ジヒドロナフタレン、1,3−ジイソプロペニルベンゼン、3−メチルスチレン、4−メチルスチレン、2−ビニルナフタレン、ブチルアクリレート、ブチルメタクリレート、イソブチルアクリレート、ヘキシルアクリレート、イソオクチルアクリレート、イソボルニルアクリレート、シクロヘキシルメタクリレート、1,3−ブタンジオールジアクリレート、1,3−ブタンジオールジメタクリレート、ネオペンチルグリコールジアクリレート、1,4−ブタンジオールジアクリレート、1,4−ブタンジオールジメタクリレート、1,6−ヘキサンジオールジアクリレート、1,6−ヘキサンジオールメタクリレート、1,9−ノナンジオールジメタクリレート、1,10−デカンジオールジメタクリレート、ジメチロール−トリシクロデカンジアクリレート、ペンタエリスリトールトリアクリレート、ペンタエリスリトールテトラアクリレート、ペンタエリスリトールトリメタクリレート、ペンタエリスリトールテトラメタクリレート、2−ヒドロキシエチルアクリレート、2−ヒドロキシエチルメタクリレート、1,3−アクリロイルオキシ−2−ヒドロキシプロパン、1,3−メタクリロイルオキシ−2−ヒドロキシプロパン、メチレンビスアクリルアミド、N,N−ジメチルアクリルアミド、N−メチロールアクリルアミド、2,2,6,6−テトラメチルピペリジニルメタクリレート、2,2,6,6−テトラメチルピペリジニルアクリレート、N−メチル−2,2,6,6−テトラメチルピペリジニルメタクリレート、N−メチル−2,2,6,6−テトラメチルピペリジニルアクリレートなどが挙げられる。 (E) Examples of the polymerizable compound having an unsaturated bond include diethylene glycol diacrylate, triethylene glycol diacrylate, tetraethylene glycol diacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, and trimethylol. Propanediacrylate, trimethylolpropane triacrylate, trimethylolpropane dimethacrylate, trimethylolpropane trimethacrylate, styrene, α-methylstyrene, 1,2-dihydronaphthalene, 1,3-diisopropenylbenzene, 3-methylstyrene, 4-methylstyrene, 2-vinylnaphthalene, butyl acrylate, butyl methacrylate, isobutyl acrylate Hexyl acrylate, isooctyl acrylate, isobornyl acrylate, cyclohexyl methacrylate, 1,3-butanediol diacrylate, 1,3-butanediol dimethacrylate, neopentyl glycol diacrylate, 1,4-butanediol diacrylate, 1, 4-butanediol dimethacrylate, 1,6-hexanediol diacrylate, 1,6-hexanediol methacrylate, 1,9-nonanediol dimethacrylate, 1,10-decanediol dimethacrylate, dimethylol-tricyclodecane diacrylate, Pentaerythritol triacrylate, pentaerythritol tetraacrylate, pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 1,3-acryloyloxy-2-hydroxypropane, 1,3-methacryloyloxy-2-hydroxypropane, methylenebisacrylamide, N, N-dimethylacrylamide, N-methylol Acrylamide, 2,2,6,6-tetramethylpiperidinyl methacrylate, 2,2,6,6-tetramethylpiperidinyl acrylate, N-methyl-2,2,6,6-tetramethylpiperidinyl methacrylate N-methyl-2,2,6,6-tetramethylpiperidinyl acrylate and the like.
(e)不飽和結合を有する重合性化合物の含有量は、(a)成分の樹脂100重量部に対して、好ましくは5〜200重量部であり、相溶性の点から5〜150重量部がより好ましい。 (E) The content of the polymerizable compound having an unsaturated bond is preferably 5 to 200 parts by weight with respect to 100 parts by weight of the resin (a), and 5 to 150 parts by weight from the viewpoint of compatibility. More preferred.
(f)光重合開始剤としては、例えば、ベンゾフェノン、ミヒラーズケトン、4,4’−ビス(ジエチルアミノ)ベンゾフェノン、3,3’,4,4’−テトラ(t−ブチルパーオキシカルボニル)ベンゾフェノンなどのベンゾフェノン類や3,5−ビス(ジエチルアミノベンジリデン)−N−メチル−4−ピペリドン、3,5−ビス(ジエチルアミノベンジリデン)−N−エチル−4−ピペリドンなどのベンジリデン類、7−ジエチルアミノ−3−テノニルクマリン、4,6−ジメチル−3−エチルアミノクマリン、3,3−カルボニルビス(7−ジエチルアミノクマリン)、7−ジエチルアミノ−3−(1−メチルメチルベンゾイミダゾリル)クマリン、3−(2−ベンゾチアゾリル)−7−ジエチルアミノクマリンなどのクマリン類、2−t−ブチルアントラキノン、2−エチルアントラキノン、1,2−ベンズアントラキノンなどのアントラキノン類、ベンゾインメチルエーテル、ベンゾインエチルエーテル、ベンゾインイソプロピルエーテルなどのベンゾイン類、エチレングリコールビス(3−メルカプトプロピオネート)、2−メルカプトベンズチアゾール、2−メルカプトベンゾオキサゾール、2−メルカプトベンズイミダゾールなどのメルカプト類、N−フェニルグリシン、N−メチル−N−フェニルグリシン、N−エチル−N−(p−クロロフェニル)グリシン、N−(4−シアノフェニル)グリシンなどのグリシン類、1−フェニル−1,2−ブタンジオン−2−(o−メトキシカルボニル)オキシム、1−フェニル−1,2−プロパンジオン−2−(o−メトキシカルボニル)オキシム、1−フェニル−1,2−プロパンジオン−2−(o−エトキシカルボニル)オキシム、1−フェニル−1,2−プロパンジオン−2−(o−ベンゾイル)オキシム、ビス(α−イソニトロソプロピオフェノンオキシム)イソフタル、1,2−オクタンジオン−1−[4−(フェニルチオ)フェニル]−2−(o−ベンゾイルオキシム)、OXE02(商品名、チバスペシャルティケミカルズ(株)製)などのオキシム類、2−ベンジル−2−ジメチルアミノ−1−(4−モルフォリノフェニル)−ブタン−1−オン、2−メチル−1−[4−(メチルチオ)フェニル]−2−モルフォリノプロパン−1−オンなどのα−アミノアルキルフェノン類、2,2’−ビス(o−クロロフェニル)−4,4’,5,5’−テトラフェニルビイミダゾールなどが挙げられる。これらを2種以上含有してもよい。 (F) Examples of the photopolymerization initiator include benzophenones such as benzophenone, Michler's ketone, 4,4′-bis (diethylamino) benzophenone, and 3,3 ′, 4,4′-tetra (t-butylperoxycarbonyl) benzophenone. , Benzylidenes such as 3,5-bis (diethylaminobenzylidene) -N-methyl-4-piperidone and 3,5-bis (diethylaminobenzylidene) -N-ethyl-4-piperidone, 7-diethylamino-3-thenonyl Coumarin, 4,6-dimethyl-3-ethylaminocoumarin, 3,3-carbonylbis (7-diethylaminocoumarin), 7-diethylamino-3- (1-methylmethylbenzimidazolyl) coumarin, 3- (2-benzothiazolyl)- Coumarins such as 7-diethylaminocoumarin, -Anthraquinones such as t-butylanthraquinone, 2-ethylanthraquinone, 1,2-benzanthraquinone, benzoins such as benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, ethylene glycol bis (3-mercaptopropionate), Mercaptos such as 2-mercaptobenzthiazole, 2-mercaptobenzoxazole, 2-mercaptobenzimidazole, N-phenylglycine, N-methyl-N-phenylglycine, N-ethyl-N- (p-chlorophenyl) glycine, N -Glycines such as-(4-cyanophenyl) glycine, 1-phenyl-1,2-butanedione-2- (o-methoxycarbonyl) oxime, 1-phenyl-1,2-propanedione-2- (o-me Xylcarbonyl) oxime, 1-phenyl-1,2-propanedione-2- (o-ethoxycarbonyl) oxime, 1-phenyl-1,2-propanedione-2- (o-benzoyl) oxime, bis (α- Isonitrosopropiophenone oxime) isophthal, 1,2-octanedione-1- [4- (phenylthio) phenyl] -2- (o-benzoyloxime), OXE02 (trade name, manufactured by Ciba Specialty Chemicals Co., Ltd.), etc. Oximes, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butan-1-one, 2-methyl-1- [4- (methylthio) phenyl] -2-morpholinopropane- Α-aminoalkylphenones such as 1-one, 2,2′-bis (o-chlorophenyl) -4,4 ′, 5,5′- Such as tigers biimidazole and the like. Two or more of these may be contained.
(f)光重合開始剤の含有量は、(a)成分の樹脂100重量部に対して、1種類につき0.1〜40重量部が好ましい。2種以上を組み合わせる場合は、総量で0.2〜60重量部とすることが好ましい。 (F) The content of the photopolymerization initiator is preferably 0.1 to 40 parts by weight per 100 parts by weight of the resin (a). When combining 2 or more types, the total amount is preferably 0.2 to 60 parts by weight.
本発明の樹脂組成物は、耐熱性および耐薬品性を低下させない範囲で、ノボラックまたはポリヒドロキシスチレンなどのフェノール性水酸基を有する樹脂を含有してもよい。これらの樹脂を含有することにより、感度を向上させることができる。 The resin composition of the present invention may contain a resin having a phenolic hydroxyl group such as novolak or polyhydroxystyrene as long as the heat resistance and chemical resistance are not lowered. By containing these resins, the sensitivity can be improved.
ノボラック樹脂は、フェノール類をホルマリンなどのアルデヒド類で公知の方法で重縮合することにより得られる。 The novolac resin can be obtained by polycondensing phenols with aldehydes such as formalin by a known method.
フェノール類としては、例えば、フェノール、p−クレゾール、m−クレゾール、o−クレゾール、2,3−ジメチルフェノール、2,4−ジメチルフェノール、2,5−ジメチルフェノール、2,6−ジメチルフェノール、3,4−ジメチルフェノール、3,5−ジメチルフェノール、2,3,4−トリメチルフェノール、2,3,5−トリメチルフェノール、3,4,5−トリメチルフェノール、2,4,5−トリメチルフェノール、メチレンビスフェノール、メチレンビス(p−クレゾール)、レゾルシン、カテコール、2−メチルレゾルシン、4−メチルレゾルシン、o−クロロフェノール、m−クロロフェノール、p−クロロフェノール、2,3−ジクロロフェノール、m−メトキシフェノール、p−メトキシフェノール、p−ブトキシフェノール、o−エチルフェノール、m−エチルフェノール、p−エチルフェノール、2,3−ジエチルフェノール、2,5−ジエチルフェノール、p−イソプロピルフェノール、α−ナフトール、β−ナフトールなどが挙げられる。これらを2種以上用いてもよい。 Examples of phenols include phenol, p-cresol, m-cresol, o-cresol, 2,3-dimethylphenol, 2,4-dimethylphenol, 2,5-dimethylphenol, 2,6-dimethylphenol, 3 , 4-dimethylphenol, 3,5-dimethylphenol, 2,3,4-trimethylphenol, 2,3,5-trimethylphenol, 3,4,5-trimethylphenol, 2,4,5-trimethylphenol, methylene Bisphenol, methylenebis (p-cresol), resorcin, catechol, 2-methylresorcin, 4-methylresorcin, o-chlorophenol, m-chlorophenol, p-chlorophenol, 2,3-dichlorophenol, m-methoxyphenol, p-methoxyphenol, p-butyl Alkoxy phenol, o- ethylphenol, m- ethylphenol, p- ethylphenol, 2,3-diethyl phenol, 2,5-diethyl phenol, p- isopropylphenol, alpha-naphthol, such as β- naphthol. Two or more of these may be used.
また、アルデヒド類としては、ホルマリン、パラホルムアルデヒド、アセトアルデヒド、ベンズアルデヒド、ヒドロキシベンズアルデヒド、クロロアセトアルデヒドなどが挙げられる。これらを2種以上用いてもよい。 Examples of aldehydes include formalin, paraformaldehyde, acetaldehyde, benzaldehyde, hydroxybenzaldehyde, chloroacetaldehyde, and the like. Two or more of these may be used.
ポリヒドロキシスチレン樹脂としては、ビニルフェノールのホモポリマーまたはスチレンとの共重合体が挙げられる。 Examples of the polyhydroxystyrene resin include vinylphenol homopolymers and copolymers with styrene.
これらの樹脂の好ましい重量平均分子量は、GPC(ゲルパーミエーションクロマトグラフィー)によるポリスチレン換算で2000〜50000、より好ましくは3000〜40000である。 The preferable weight average molecular weight of these resins is 2000 to 50000 in terms of polystyrene by GPC (gel permeation chromatography), more preferably 3000 to 40000.
ノボラック樹脂および/またはポリヒドロキシスチレン樹脂の含有量は、(a)成分の樹脂100重量部に対して、1〜1000重量部が好ましい。 The content of the novolak resin and / or polyhydroxystyrene resin is preferably 1 to 1000 parts by weight with respect to 100 parts by weight of the resin (a).
また、必要に応じて、キュア後の収縮残膜率を小さくしない範囲でフェノール性水酸基を有する低分子化合物を含有してもよい。これにより、現像時間を短縮することができる。 Moreover, you may contain the low molecular compound which has a phenolic hydroxyl group in the range which does not make the shrinkage | contraction residual film ratio after hardening small as needed. Thereby, the development time can be shortened.
これらの化合物としては、例えば、Bis−Z、BisP−EZ、TekP−4HBPA(テトラキスP−DO−BPA)、TrisP−HAP、TrisP−PA、BisOCHP−Z、BisP−MZ、BisP−PZ、BisP−IPZ、BisOCP−IPZ、BisP−CP、BisRS−2P、BisRS−3P、BisP−OCHP、メチレントリス−FR−CR、BisRS−26X(以上、商品名、本州化学工業(株)製)、BIP−PC、BIR−PC、BIR−PTBP、BIR−BIPC−F(以上、商品名、旭有機材工業(株)製)などが挙げられる。これらを2種以上含有してもよい。 As these compounds, for example, Bis-Z, BisP-EZ, TekP-4HBPA (tetrakis P-DO-BPA), TrisP-HAP, TrisP-PA, BisOCHP-Z, BisP-MZ, BisP-PZ, BisP- IPZ, BisOCP-IPZ, BisP-CP, BisRS-2P, BisRS-3P, BisP-OCHP, Methylenetris-FR-CR, BisRS-26X (above, trade name, manufactured by Honshu Chemical Industry Co., Ltd.), BIP-PC , BIR-PC, BIR-PTBP, BIR-BIPC-F (trade name, manufactured by Asahi Organic Materials Co., Ltd.) and the like. Two or more of these may be contained.
フェノール性水酸基を有する低分子化合物の含有量は、(a)成分の樹脂100重量部に対して、好ましくは1〜40重量部である。 The content of the low molecular weight compound having a phenolic hydroxyl group is preferably 1 to 40 parts by weight with respect to 100 parts by weight of the resin (a).
本発明の樹脂組成物は、溶剤を含有することが好ましい。溶剤としては、N−メチル−2−ピロリドン、γ−ブチロラクトン、N,N−ジメチルホルムアミド、N,N−ジメチルアセトアミド、ジメチルスルホキシドなどの極性の非プロトン性溶媒、テトラヒドロフラン、ジオキサン、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテルなどのエーテル類、アセトン、メチルエチルケトン、ジイソブチルケトンなどのケトン類、酢酸エチル、酢酸ブチル、酢酸イソブチル、酢酸プロピル、プロピレングリコールモノメチルエーテルアセテート、3−メチル−3−メトキシブチルアセテートなどのエステル類、乳酸エチル、乳酸メチル、ジアセトンアルコール、3−メチル−3−メトキシブタノールなどのアルコール類、トルエン、キシレンなどの芳香族炭化水素類などが挙げられる。これらを2種以上含有してもよい。溶媒の含有量は、(a)成分の樹脂100重量部に対して、100〜1500重量部が好ましい。 The resin composition of the present invention preferably contains a solvent. As the solvent, polar aprotic solvents such as N-methyl-2-pyrrolidone, γ-butyrolactone, N, N-dimethylformamide, N, N-dimethylacetamide, dimethylsulfoxide, tetrahydrofuran, dioxane, propylene glycol monomethyl ether, Ethers such as propylene glycol monoethyl ether, ketones such as acetone, methyl ethyl ketone, diisobutyl ketone, ethyl acetate, butyl acetate, isobutyl acetate, propyl acetate, propylene glycol monomethyl ether acetate, 3-methyl-3-methoxybutyl acetate, etc. Esters, alcohols such as ethyl lactate, methyl lactate, diacetone alcohol, 3-methyl-3-methoxybutanol, and aromatic hydrocarbons such as toluene and xylene Etc., and the like. Two or more of these may be contained. As for content of a solvent, 100-1500 weight part is preferable with respect to 100 weight part of resin of (a) component.
本発明の樹脂組成物の粘度は、2〜5000mPa・sが好ましい。粘度が2mPa・s以上となるように固形分濃度を調整することにより、所望の膜厚を得ることが容易になる。一方粘度が5000mPa・s以下であれば、均一性の高い塗布膜を得ることが容易になる。このような粘度を有する樹脂組成物は、例えば固形分濃度を5〜60重量%にすることで容易に得ることができる。 The viscosity of the resin composition of the present invention is preferably 2 to 5000 mPa · s. By adjusting the solid content concentration so that the viscosity is 2 mPa · s or more, it becomes easy to obtain a desired film thickness. On the other hand, when the viscosity is 5000 mPa · s or less, it becomes easy to obtain a highly uniform coating film. A resin composition having such a viscosity can be easily obtained by setting the solid content concentration to 5 to 60% by weight, for example.
本発明の樹脂組成物は、必要に応じて基板との濡れ性を向上させる目的で界面活性剤、乳酸エチルやプロピレングリコールモノメチルエーテルアセテートなどのエステル類、エタノールなどのアルコール類、シクロヘキサノン、メチルイソブチルケトンなどのケトン類、テトラヒドロフラン、ジオキサンなどのエ−テル類を含有してもよい。 The resin composition of the present invention is a surfactant, esters such as ethyl lactate and propylene glycol monomethyl ether acetate, alcohols such as ethanol, cyclohexanone, methyl isobutyl ketone for the purpose of improving the wettability with the substrate as necessary. And the like, and ethers such as tetrahydrofuran and dioxane.
また、本発明の樹脂組成物は無機粒子を含んでもよい。好ましい具体例としては酸化珪素、酸化チタン、チタン酸バリウム、アルミナ、タルクなどが挙げられるがこれらに限定されない。これら無機粒子の一次粒子径は100nm以下、より好ましくは60nm以下が好ましい。 Moreover, the resin composition of the present invention may contain inorganic particles. Preferred specific examples include, but are not limited to, silicon oxide, titanium oxide, barium titanate, alumina, talc and the like. The primary particle diameter of these inorganic particles is preferably 100 nm or less, more preferably 60 nm or less.
また、基板との接着性を高めるために、保存安定性を損なわない範囲で本発明の樹脂組成物にシリコン成分として、トリメトキシアミノプロピルシラン、トリメトキシエポキシシラン、トリメトキシビニルシラン、トリメトキシチオールプロピルシランなどのシランカップリング剤を含有してもよい。好ましい含有量は、(a)成分の樹脂100重量部に対して0.01〜5重量部である。 In addition, in order to enhance the adhesion to the substrate, the resin composition of the present invention includes, as a silicon component, trimethoxyaminopropylsilane, trimethoxyepoxysilane, trimethoxyvinylsilane, trimethoxythiolpropyl as long as storage stability is not impaired. A silane coupling agent such as silane may be contained. A preferable content is 0.01 to 5 parts by weight with respect to 100 parts by weight of the resin of component (a).
次に、本発明の樹脂組成物の製造方法について例を挙げて説明するが、以下の方法に限定されない。 Next, although the manufacturing method of the resin composition of this invention is demonstrated with an example, it is not limited to the following methods.
(a)成分を有機溶剤に撹拌溶解し、あるいは(a)成分を得るために重合反応して得られた樹脂溶液をそのまま用い、この樹脂溶液に(b)成分を所定の割合で混合することで、均一な溶液とする。必要に応じて、製造過程の適当な段階でその他添加剤を混合する。添加剤が無機粒子の場合は、撹拌もしくは分散機を使用して分散液とする。このようにして得られた樹脂組成物を、孔径が0.2〜5μm程度のフィルターで濾過することが好ましい。 The component (a) is dissolved in an organic solvent with stirring, or the resin solution obtained by polymerization reaction to obtain the component (a) is used as it is, and the component (b) is mixed with the resin solution at a predetermined ratio. Make a uniform solution. If necessary, other additives are mixed at an appropriate stage of the production process. When the additive is inorganic particles, a dispersion is obtained by using a stirring or dispersing machine. It is preferable to filter the resin composition thus obtained with a filter having a pore size of about 0.2 to 5 μm.
次に、本発明の樹脂組成物の加工例としてパターンを形成する方法について説明するが、本発明の加工例、用途はこれによって限定されない。まず、樹脂組成物を基板上に塗布する。基板としてはシリコン、セラミックス類、ガリウムヒ素などのウェハー、または、その上に金属材料、例えば銅、金、チタン系金属からなる電極および/または配線が形成されているものが用いられるが、これらに限定されない。塗布方法としては、スピンナを用いた回転塗布、スプレー塗布、ロールコーティングなどの方法がある。また、塗布膜厚は、塗布手法、組成物の固形分濃度、粘度などによって異なるが、通常、乾燥後の膜厚が0.1〜150μmになるように塗布する。 Next, although the method of forming a pattern is demonstrated as a processing example of the resin composition of this invention, the processing example and use of this invention are not limited by this. First, a resin composition is applied on a substrate. As the substrate, a wafer made of silicon, ceramics, gallium arsenide or the like, or a substrate on which an electrode and / or wiring made of a metal material such as copper, gold, or titanium-based metal is used is used. It is not limited. Examples of the coating method include spin coating using a spinner, spray coating, and roll coating. Further, the coating film thickness varies depending on the coating method, the solid content concentration of the composition, the viscosity, and the like, but is usually applied so that the film thickness after drying becomes 0.1 to 150 μm.
次に樹脂組成物を塗布した基板を乾燥して、樹脂被膜を得る。乾燥はオーブン、ホットプレート、赤外線などを使用し、50℃〜150℃の範囲で1分間〜数時間行うことが好ましい。必要に応じて、80℃で2分間加熱した後120℃で2分間加熱するなど、2段あるいはそれ以上の多段で乾燥することもできる。 Next, the substrate coated with the resin composition is dried to obtain a resin film. Drying is preferably performed using an oven, a hot plate, infrared rays, or the like in the range of 50 ° C. to 150 ° C. for 1 minute to several hours. If necessary, drying can be performed in two or more stages, such as heating at 80 ° C. for 2 minutes and then heating at 120 ° C. for 2 minutes.
樹脂組成物に感光性が付与されていない場合はさらにこの上にフォトレジスト薬液を塗布する。塗布方法としては、スピンナを用いた回転塗布、スプレー塗布、ロールコーティングなどの方法がある。また、塗布膜厚は、塗布手法、組成物の固形分濃度、粘度などによって異なるが、通常、乾燥後の膜厚が0.1〜150μmになるように塗布する。 When photosensitivity is not given to the resin composition, a photoresist chemical solution is further applied thereon. Examples of the coating method include spin coating using a spinner, spray coating, and roll coating. Further, the coating film thickness varies depending on the coating method, the solid content concentration of the composition, the viscosity, and the like, but is usually applied so that the film thickness after drying becomes 0.1 to 150 μm.
次に、フォトレジストを塗布した基板を乾燥して、フォトレジストと本発明の樹脂の2層被膜を得る。乾燥はオーブン、ホットプレート、赤外線などを使用し、50℃〜150℃の範囲で1分間〜数時間行うことが好ましい。必要に応じて、80℃で2分間加熱した後120℃で2分間加熱するなど、2段あるいはそれ以上の多段で乾燥することもできる。 Next, the substrate coated with the photoresist is dried to obtain a two-layer coating of the photoresist and the resin of the present invention. Drying is preferably performed using an oven, a hot plate, infrared rays, or the like in the range of 50 ° C. to 150 ° C. for 1 minute to several hours. If necessary, drying can be performed in two or more stages, such as heating at 80 ° C. for 2 minutes and then heating at 120 ° C. for 2 minutes.
次に、この2層被膜上に所望のパターンを有するマスクを通して化学線を照射し、露光する。露光に用いられる化学線としては紫外線、可視光線、電子線、X線などがあるが、本発明では水銀灯のi線(365nm)、h線(405nm)、g線(436nm)を用いることが好ましい。 Next, the two-layer coating is exposed to actinic radiation through a mask having a desired pattern. As the actinic radiation used for exposure, there are ultraviolet rays, visible rays, electron beams, X-rays and the like. In the present invention, it is preferable to use i rays (365 nm), h rays (405 nm), and g rays (436 nm) of a mercury lamp. .
樹脂組成物に感光性が付与されている場合は、フォトレジストの塗布なしに直接化学線を所望のパターンを有するマスクを通して照射し、露光することができる。 In the case where photosensitivity is imparted to the resin composition, exposure can be performed by directly irradiating actinic radiation through a mask having a desired pattern without applying a photoresist.
樹脂組成物に感光性が付与されている場合は、現像時のパターンの解像度が向上したり、現像条件の許容幅が増大する場合には、現像前にベーク処理をする工程を取り入れても差し支えない。この温度としては50〜180℃の範囲が好ましく、60〜150℃の範囲がより好ましい。時間は10秒間〜数時間が好ましい。この範囲内であると反応が良好に進行し、現像時間も短くて済むという利点がある。 If photosensitivity is imparted to the resin composition, a bake process may be incorporated before development if the resolution of the pattern during development is improved or the allowable range of development conditions increases. Absent. As this temperature, the range of 50-180 degreeC is preferable, and the range of 60-150 degreeC is more preferable. The time is preferably 10 seconds to several hours. Within this range, there are advantages that the reaction proceeds satisfactorily and the development time can be shortened.
樹脂パターンを形成するには、露光後、現像液を用いてポジ型の場合は露光部を、ネガ型の場合は未露光部を除去する。現像液は、テトラメチルアンモニウムの水溶液、ジエタノールアミン、ジエチルアミノエタノール、水酸化ナトリウム、水酸化カリウム、炭酸ナトリウム、炭酸カリウム、トリエチルアミン、ジエチルアミン、メチルアミン、ジメチルアミン、酢酸ジメチルアミノエチル、ジメチルアミノエタノール、ジメチルアミノエチルメタクリレート、シクロヘキシルアミン、エチレンジアミン、ヘキサメチレンジアミンなどのアルカリ性を示す化合物の水溶液が好ましい。また場合によっては、これらのアルカリ水溶液にN−メチル−2−ピロリドン、N,N−ジメチルホルムアミド、N,N−ジメチルアセトアミド、ジメチルスルホキシド、γ−ブチロラクトン、ジメチルアクリルアミドなどの極性溶媒、メタノール、エタノール、イソプロピルアルコールなどのアルコール類、乳酸エチル、プロピレングリコールモノメチルエーテルアセテートなどのエステル類、シクロペンタノン、シクロヘキサノン、イソブチルケトン、メチルイソブチルケトンなどのケトン類などを1種または2種以上組み合わせたものを添加してもよい。現像後は水にてリンス処理をすることが一般的である。ここでもエタノール、イソプロピルアルコールなどのアルコール類、乳酸エチル、プロピレングリコールモノメチルエーテルアセテートなどのエステル類などを水に加えてリンス処理をしてもよい。 In order to form a resin pattern, after exposure, an exposed portion is removed in the case of a positive type and a non-exposed portion is removed in the case of a negative type using a developer. The developer is an aqueous solution of tetramethylammonium, diethanolamine, diethylaminoethanol, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, triethylamine, diethylamine, methylamine, dimethylamine, dimethylaminoethyl acetate, dimethylaminoethanol, dimethylamino An aqueous solution of a compound exhibiting alkalinity such as ethyl methacrylate, cyclohexylamine, ethylenediamine, hexamethylenediamine and the like is preferable. In some cases, these alkaline aqueous solutions may contain polar solvents such as N-methyl-2-pyrrolidone, N, N-dimethylformamide, N, N-dimethylacetamide, dimethyl sulfoxide, γ-butyrolactone, dimethylacrylamide, methanol, ethanol, Add one or a combination of two or more alcohols such as isopropyl alcohol, esters such as ethyl lactate and propylene glycol monomethyl ether acetate, ketones such as cyclopentanone, cyclohexanone, isobutyl ketone, and methyl isobutyl ketone. May be. After development, it is common to rinse with water. Here, alcohols such as ethanol and isopropyl alcohol, and esters such as ethyl lactate and propylene glycol monomethyl ether acetate may be added to water for rinsing treatment.
現像後、100℃〜400℃の温度を加えて(a)成分と(b)成分の架橋反応を促進させる。この加熱処理は温度を選び、段階的に昇温するか、ある温度範囲を選び連続的に昇温しながら5分間〜5時間実施する。一例としては、130℃、200℃、300℃で各30分間ずつ熱処理する。あるいは室温より300℃まで2時間かけて直線的に昇温するなどの方法が挙げられる。本発明においての焼成温度としては150℃以上350℃以下が好ましいが、本発明は特に低温硬化性において優れた硬化膜を提供するものであるため、180℃以上250℃以下がより好ましい。 After the development, a temperature of 100 ° C. to 400 ° C. is applied to promote the crosslinking reaction between the component (a) and the component (b). This heat treatment is carried out for 5 minutes to 5 hours by selecting the temperature and raising the temperature stepwise, or selecting a certain temperature range and continuously raising the temperature. As an example, heat treatment is performed at 130 ° C., 200 ° C., and 300 ° C. for 30 minutes each. Alternatively, a method such as linearly raising the temperature from room temperature to 300 ° C. over 2 hours can be mentioned. The baking temperature in the present invention is preferably 150 ° C. or higher and 350 ° C. or lower. However, since the present invention provides a cured film particularly excellent in low-temperature curability, 180 ° C. or higher and 250 ° C. or lower is more preferable.
本発明の樹脂組成物により形成した被膜は、半導体のパッシベーション膜、半導体素子の保護膜、高密度実装用多層配線の層間絶縁膜、有機電界発光素子の絶縁層などの用途に好適に用いられる。本発明の樹脂組成物を使用して得られる表面保護膜や層間絶縁膜などを有する電子デバイスとしては、例えば、耐熱性の低いMRAMが好ましい。すなわち、本発明の樹脂組成物は、MRAMの表面保護膜用として好適である。また、MRAM以外にも次世代メモリとして有望なポリマーメモリ(PolymerFerroelectric RAM:PFRAM)や相変化メモリ(Phase Change RAM:PCRAM、あるいはOvonics Unified Memory:OUM)も、従来のメモリに比べて耐熱性の低い新材料を用いる可能性が高い。したがって、本発明の樹脂組成物は、これらの表面保護膜用としても好適である。また、基板上に形成された第一電極と、前記第一電極に対向して設けられた第二電極とを含む表示装置、具体的には例えば、LCD、ECD、ELD、有機電界発光素子を用いた表示装置(有機電界発光装置)などの絶縁層に用いることができる。特に、近年の半導体素子の電極や多層配線、回路基板の配線は、構造のさらなる微細化に伴い、銅電極、銅配線が主流となっており、本発明の樹脂組成物により形成した耐熱性樹脂被膜をそのような電極、配線の保護膜として用いると、下地の銅電極や銅配線を腐食することなく高感度でパターン形成できるため、特に好ましく用いられる。 The film formed from the resin composition of the present invention is suitably used for applications such as a semiconductor passivation film, a protective film for semiconductor elements, an interlayer insulating film for multilayer wiring for high-density mounting, and an insulating layer for organic electroluminescent elements. As an electronic device having a surface protective film, an interlayer insulating film and the like obtained by using the resin composition of the present invention, for example, MRAM having low heat resistance is preferable. That is, the resin composition of the present invention is suitable for a surface protective film of MRAM. In addition to MRAM, polymer memory (Polymer Ferroelectric RAM: PFRAM) and phase change memory (Phase RAM: PCRAM, or Ovonics Unified Memory: OUM), which are promising as next-generation memories, have lower heat resistance than conventional memories. There is a high possibility of using new materials. Therefore, the resin composition of the present invention is also suitable for these surface protective films. In addition, a display device including a first electrode formed on a substrate and a second electrode provided to face the first electrode, specifically, for example, an LCD, an ECD, an ELD, an organic electroluminescent element It can be used for an insulating layer of the display device (organic electroluminescence device) used. In particular, with recent miniaturization of electrodes, multilayer wiring, and circuit board wiring of semiconductor elements, copper electrodes and copper wiring have become mainstream, and the heat resistant resin formed by the resin composition of the present invention. When the coating film is used as a protective film for such an electrode or wiring, it is particularly preferably used because a pattern can be formed with high sensitivity without corroding the underlying copper electrode or copper wiring.
以下、実施例を挙げて本発明を説明するが、本発明はこれらの例によって限定されるものではない。まず、各実施例および比較例における硬化膜の機械特性評価方法について説明する。 EXAMPLES Hereinafter, although an Example is given and this invention is demonstrated, this invention is not limited by these examples. First, a method for evaluating the mechanical properties of the cured film in each example and comparative example is described.
6インチのシリコンウェハー上に、1μmのポリテトラフルオロエチレン製のフィルター(住友電気工業(株)製)で濾過した樹脂組成物を、120℃で3分間のプリベーク後の膜厚が10μmとなるように塗布現像装置Mark−7(東京エレクトロン(株)製)を用いてスピンコート法で塗布およびプリベークした後、イナートオーブンCLH−21CD−S(光洋サーモシステム(株)製)を用いて、酸素濃度20ppm以下で3.5℃/分で200℃まで昇温し、200℃で1時間加熱処理を行なった。温度が50℃以下になったところでウェハーを取り出し、45重量%のフッ化水素酸に5分間浸漬することで、ウェハーより樹脂組成物の膜を剥がした。この膜を幅1cm、長さ9cmの短冊状に切断し、テンシロンRTM−100((株)オリエンテック製)を用いて、室温23.0℃、湿度45.0%RH下で引張速度50mm/分で引っ張り、破断点伸度の測定を行なった。測定は1検体につき10枚の短冊について行ない、結果から上位5点の平均値を求めた。破断点伸度の値が10%以上の条件を満たすときを合格、満たさないときを不合格とした。 The resin composition filtered through a 1 μm polytetrafluoroethylene filter (manufactured by Sumitomo Electric Industries, Ltd.) on a 6-inch silicon wafer so that the film thickness after pre-baking at 120 ° C. for 3 minutes is 10 μm. After coating and pre-baking with a coating and developing apparatus Mark-7 (manufactured by Tokyo Electron Co., Ltd.) by a spin coating method, oxygen concentration using an inert oven CLH-21CD-S (manufactured by Koyo Thermo System Co., Ltd.) The temperature was raised to 200 ° C. at 3.5 ° C./min at 20 ppm or less, and heat treatment was performed at 200 ° C. for 1 hour. When the temperature became 50 ° C. or lower, the wafer was taken out and immersed in 45% by weight of hydrofluoric acid for 5 minutes to peel off the resin composition film from the wafer. This film was cut into strips having a width of 1 cm and a length of 9 cm, and using Tensilon RTM-100 (manufactured by Orientec Co., Ltd.) at a room temperature of 23.0 ° C. and a humidity of 45.0% RH, a tensile rate of 50 mm / The sample was pulled in minutes and the elongation at break was measured. The measurement was performed on 10 strips per specimen, and the average value of the top 5 points was obtained from the results. When the value of the elongation at break satisfies the condition of 10% or more, it was judged as acceptable, and when it did not satisfy it, it was judged as unacceptable.
(a)成分の樹脂中のフェノール性水酸基量は、各モノマーの分子量およびフェノール性水酸基数と、理論的に生成するポリマー構造とから計算によって求めた。 The amount of phenolic hydroxyl group in the resin of component (a) was determined by calculation from the molecular weight of each monomer, the number of phenolic hydroxyl groups, and the theoretically generated polymer structure.
合成例1 ヒドロキシル基含有ジアミン化合物の合成
2,2−ビス(3−アミノ−4−ヒドロキシフェニル)ヘキサフルオロプロパン(以降BAHFと呼ぶ)18.3g(0.05モル)をアセトン100mL、プロピレンオキシド17.4g(0.3モル)に溶解させ、−15℃に冷却した。ここに4−ニトロベンゾイルクロリド20.4g(0.11モル)をアセトン100mLに溶解させた溶液を滴下した。滴下終了後、−15℃で4時間反応させ、その後室温に戻した。析出した白色固体をろ別し、50℃で真空乾燥した。
Synthesis Example 1 Synthesis of hydroxyl group-containing diamine compound 18.3 g (0.05 mol) of 2,2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane (hereinafter referred to as BAHF) was added to 100 mL of acetone and 17 of propylene oxide. It was dissolved in 0.4 g (0.3 mol) and cooled to -15 ° C. A solution prepared by dissolving 20.4 g (0.11 mol) of 4-nitrobenzoyl chloride in 100 mL of acetone was added dropwise thereto. After completion of dropping, the mixture was reacted at −15 ° C. for 4 hours and then returned to room temperature. The precipitated white solid was filtered off and vacuum dried at 50 ° C.
固体30gを300mLのステンレスオートクレーブに入れ、メチルセルソルブ250mLに分散させ、5%パラジウム−炭素を2g加えた。ここに水素を風船で導入して、還元反応を室温で行なった。約2時間後、風船がこれ以上しぼまないことを確認して反応を終了させた。反応終了後、濾過して触媒であるパラジウム化合物を除き、ロータリーエバポレーターで濃縮し、下記式で表されるヒドロキシル基含有ジアミン化合物を得た。 30 g of the solid was placed in a 300 mL stainless steel autoclave, dispersed in 250 mL of methyl cellosolve, and 2 g of 5% palladium-carbon was added. Hydrogen was introduced here with a balloon and the reduction reaction was carried out at room temperature. After about 2 hours, the reaction was terminated by confirming that the balloons did not squeeze any more. After completion of the reaction, the catalyst was filtered to remove the palladium compound as a catalyst, and the mixture was concentrated with a rotary evaporator to obtain a hydroxyl group-containing diamine compound represented by the following formula.
合成例2 キノンジアジド化合物の合成
乾燥窒素気流下、TrisP−HAP(商品名、本州化学工業(株)製)15.31g(0.05モル)と5−ナフトキノンジアジドスルホニルクロリド(NAC−5、東洋合成(株)製)26.86g(0.10モル)を1,4−ジオキサン450gに溶解させ、室温にした。ここに、1,4−ジオキサン50gと混合させたトリエチルアミン15.18gを系内が35℃以上にならないように滴下した。滴下後30℃で2時間撹拌した。トリエチルアミン塩を濾過し、濾液を水に投入させた。その後、析出した沈殿を濾過で集め、さらに1重量%塩酸1Lで洗浄した。その後、さらに水2Lで2回洗浄した。この沈殿を真空乾燥機で乾燥させ、Qのうち平均して2個が5−ナフトキノンジアジドスルホン酸エステル化された下記式で表されるキノンジアジド化合物を得た。
Synthesis Example 2 Synthesis of quinonediazide compound Under a dry nitrogen stream, TrisP-HAP (trade name, manufactured by Honshu Chemical Industry Co., Ltd.) 15.31 g (0.05 mol) and 5-naphthoquinonediazidesulfonyl chloride (NAC-5, Toyosei Co., Ltd.) 26.86 g (0.10 mol) (manufactured by Co., Ltd.) was dissolved in 450 g of 1,4-dioxane and brought to room temperature. Here, 15.18 g of triethylamine mixed with 50 g of 1,4-dioxane was added dropwise so that the temperature in the system would not be 35 ° C. or higher. It stirred at 30 degreeC after dripping for 2 hours. The triethylamine salt was filtered and the filtrate was poured into water. Thereafter, the deposited precipitate was collected by filtration, and further washed with 1 L of 1 wt% hydrochloric acid. Thereafter, it was further washed twice with 2 L of water. This precipitate was dried with a vacuum dryer to obtain a quinonediazide compound represented by the following formula in which two of Q on average were converted into 5-naphthoquinonediazidesulfonic acid ester.
各実施例、比較例に使用した(b)アルコキシメチル基またはメチロール基を少なくとも2つ有する化合物を以下に示す。 The compounds (b) having at least two alkoxymethyl groups or methylol groups used in Examples and Comparative Examples are shown below.
実施例に使用した(c)熱酸発生剤PAG−103(熱分解開始温度155℃;示差走査熱量測定法)を以下に示す。 The (c) thermal acid generator PAG-103 (pyrolysis start temperature 155 ° C .; differential scanning calorimetry) used in the examples is shown below.
実施例に使用した(e)不飽和結合を有する重合性化合物を以下に示す。 The polymerizable compound (e) having an unsaturated bond used in the examples is shown below.
実施例に使用した(f)光重合開始剤を以下に示す。 The photopolymerization initiator (f) used in the examples is shown below.
実施例1
乾燥窒素気流下、BAHF29.30g(0.08モル)、1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン1.24g(0.005モル)をN−メチル−2−ピロリドン(以降NMPと呼ぶ)120gに溶解させた。ここにビス(3,4−ジカルボキシフェニル)エーテル二無水物(以降ODPAと呼ぶ、マナック(株)製)21.72g(0.07モル)をNMP10gとともに加えて、20℃で1時間反応させ、次いで50℃で4時間反応させた。その後、キシレンを15g添加し、水をキシレンとともに共沸しながら、150℃で5時間撹拌した。その後、1時間かけて50℃まで冷却し、ODPA9.31g(0.03モル)をNMP10gとともに追加して50℃で1時間撹拌し、さらに末端封止剤として4−アミノベンジルアルコール3.69g(0.03モル)をNMP5gとともに加えて50℃で1時間撹拌した。撹拌終了後、溶液を室温まで冷却した後、溶液を水3Lに投入して白色沈殿を得た。この沈殿を濾過で集めて、水で3回洗浄した後、80℃の真空乾燥機で20時間乾燥し、末端にメチロール基を有するポリイミド樹脂(A−1、フェノール性水酸基量2.6mol/kg)の粉末を得た。
Example 1
Under a dry nitrogen stream, 29.30 g (0.08 mol) of BAHF and 1.24 g (0.005 mol) of 1,3-bis (3-aminopropyl) tetramethyldisiloxane were mixed with N-methyl-2-pyrrolidone (hereinafter referred to as NMP). This was dissolved in 120 g. Bis (3,4-dicarboxyphenyl) ether dianhydride (hereinafter referred to as ODPA, Manac Co., Ltd.) (21.72 g, 0.07 mol) was added together with NMP (10 g) and reacted at 20 ° C. for 1 hour. Then, the reaction was carried out at 50 ° C. for 4 hours. Thereafter, 15 g of xylene was added, and the mixture was stirred at 150 ° C. for 5 hours while azeotropically distilling water with xylene. Thereafter, the mixture was cooled to 50 ° C. over 1 hour, 9.31 g (0.03 mol) of ODPA was added together with 10 g of NMP, stirred at 50 ° C. for 1 hour, and further 3.69 g of 4-aminobenzyl alcohol (end-capping agent) 0.03 mol) was added together with 5 g of NMP and stirred at 50 ° C. for 1 hour. After completion of the stirring, the solution was cooled to room temperature, and then the solution was poured into 3 L of water to obtain a white precipitate. This precipitate was collected by filtration, washed three times with water, and then dried for 20 hours in a vacuum dryer at 80 ° C., and a polyimide resin having a methylol group at the end (A-1, phenolic hydroxyl group amount 2.6 mol / kg). ) Was obtained.
得られた樹脂(A−1)5gに(b)成分としてNIKALAC MX−270を1g、溶剤としてγ−ブチロラクトン(以降GBLと呼ぶ)を10g加えて樹脂組成物(以下ワニスと呼ぶ)(W−1)を作製し、上記の方法で機械特性の評価を行なった。 1 g of NIKALAX MX-270 as component (b) and 10 g of γ-butyrolactone (hereinafter referred to as GBL) as a solvent were added to 5 g of the obtained resin (A-1), and a resin composition (hereinafter referred to as varnish) (W— 1) was prepared, and mechanical properties were evaluated by the above method.
実施例2
実施例1で得られた樹脂(A−1)5gに(b)成分としてNIKALAC MX−270を5g、溶剤としてGBLを17g加えてワニス(W−2)を作製し、上記の方法で機械特性の評価を行なった。
Example 2
5 g of NIKALAC MX-270 as the component (b) and 17 g of GBL as the solvent were added to 5 g of the resin (A-1) obtained in Example 1 to prepare a varnish (W-2). Was evaluated.
実施例3
乾燥窒素気流下、BAHF1.47g(0.004モル)、1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン0.25g(0.001モル)をNMP80gに溶解させた。ここにODPA4.34g(0.014モル)をNMP10gとともに加えて、20℃で1時間反応させ、次いで50℃で4時間反応させた。その後、キシレンを10g添加し、水をキシレンとともに共沸しながら、150℃で5時間撹拌した。その後、1時間かけて50℃まで冷却し、ODPA1.86g(0.006モル)をNMP10gとともに追加して50℃で1時間撹拌し、さらに末端封止剤として4−アミノベンジルアルコール0.74g(0.006モル)をNMP5gとともに加えて50℃で1時間撹拌した。撹拌終了後、溶液を室温まで冷却した後、溶液を水1Lに投入して白色沈殿を得た。この沈殿を濾過で集めて、水で3回洗浄した後、80℃の真空乾燥機で20時間乾燥し、末端にメチロール基を有するポリイミド樹脂(A−2、フェノール性水酸基量0.8mol/kg)の粉末を得た。
Example 3
Under a dry nitrogen stream, 1.47 g (0.004 mol) of BAHF and 0.25 g (0.001 mol) of 1,3-bis (3-aminopropyl) tetramethyldisiloxane were dissolved in 80 g of NMP. To this, 4.34 g (0.014 mol) of ODPA was added together with 10 g of NMP and reacted at 20 ° C. for 1 hour, and then reacted at 50 ° C. for 4 hours. Thereafter, 10 g of xylene was added, and the mixture was stirred at 150 ° C. for 5 hours while azeotropically distilling water with xylene. Thereafter, the mixture was cooled to 50 ° C. over 1 hour, 1.86 g (0.006 mol) of ODPA was added together with 10 g of NMP, and the mixture was stirred at 50 ° C. for 1 hour, and further 0.74 g of 4-aminobenzyl alcohol as a terminal blocking agent ( 0.006 mol) was added together with 5 g of NMP and stirred at 50 ° C. for 1 hour. After completion of the stirring, the solution was cooled to room temperature and then poured into 1 L of water to obtain a white precipitate. This precipitate was collected by filtration, washed with water three times, and then dried for 20 hours in a vacuum dryer at 80 ° C., and a polyimide resin having a methylol group at the end (A-2, phenolic hydroxyl group content 0.8 mol / kg). ) Was obtained.
得られた樹脂(A−2)5gに(b)成分としてNIKALAC MX−270を1g、溶剤としてGBLを10g加えてワニス(W−3)を作製し、上記の方法で機械特性の評価を行なった。 1 g of NIKALAX MX-270 as component (b) and 10 g of GBL as solvent are added to 5 g of the obtained resin (A-2) to prepare varnish (W-3), and mechanical properties are evaluated by the above method. It was.
実施例4
実施例1で得られた樹脂(A−1)5gに(b)成分としてNIKALAC MX−270を1g、熱酸発生剤としてPAG−103(商品名、チバスペシャルティケミカルズ(株)製)を0.25g、溶剤としてGBLを10g加えてワニス(W−4)を作製し、上記の方法で機械特性の評価を行なった。
Example 4
0.1 g of NIKALAC MX-270 as the component (b) and 1 PAG-103 (trade name, manufactured by Ciba Specialty Chemicals Co., Ltd.) as the thermal acid generator were added to 5 g of the resin (A-1) obtained in Example 1. 25 g and 10 g of GBL as a solvent were added to produce a varnish (W-4), and mechanical properties were evaluated by the above method.
実施例5
乾燥窒素気流下、ODPA6.20g(0.02モル)をNMP100gに溶解させた。ここに合成例1で得られたヒドロキシル基含有ジアミン化合物9.07g(0.015モル)と1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン0.25g(0.001モル)をNMP25gとともに加えて、20℃で1時間反応させ、次いで50℃で2時間反応させた。次に末端封止剤として4−アミノベンジルアルコール0.99g(0.008モル)をNMP5gとともに加え、50℃で2時間反応させた。その後、N,N−ジメチルホルムアミドジメチルアセタール7.15g(0.06モル)をNMP10gで希釈した溶液を10分かけて滴下した。滴下後、50℃で3時間撹拌した。撹拌終了後、溶液を室温まで冷却した後、溶液を水1Lに投入して白色沈殿を得た。この沈殿を濾過で集めて、水で3回洗浄した後、80℃の真空乾燥機で20時間乾燥し、末端にメチロール基を有するポリイミド前駆体およびポリベンゾオキサゾール前駆体構造を含む樹脂(A−3、フェノール性水酸基量1.8mol/kg)の粉末を得た。
Example 5
Under a dry nitrogen stream, 6.20 g (0.02 mol) of ODPA was dissolved in 100 g of NMP. Here, 9.07 g (0.015 mol) of the hydroxyl group-containing diamine compound obtained in Synthesis Example 1 and 0.25 g (0.001 mol) of 1,3-bis (3-aminopropyl) tetramethyldisiloxane were added to 25 g of NMP. And reacted at 20 ° C. for 1 hour and then at 50 ° C. for 2 hours. Next, 0.99 g (0.008 mol) of 4-aminobenzyl alcohol as an end-capping agent was added together with 5 g of NMP, and reacted at 50 ° C. for 2 hours. Thereafter, a solution obtained by diluting 7.15 g (0.06 mol) of N, N-dimethylformamide dimethylacetal with 10 g of NMP was added dropwise over 10 minutes. After dropping, the mixture was stirred at 50 ° C. for 3 hours. After completion of the stirring, the solution was cooled to room temperature and then poured into 1 L of water to obtain a white precipitate. This precipitate was collected by filtration, washed with water three times, and then dried in a vacuum dryer at 80 ° C. for 20 hours, and a resin containing a polyimide precursor having a methylol group at the end and a polybenzoxazole precursor structure (A- 3 and a phenolic hydroxyl group amount of 1.8 mol / kg) was obtained.
得られた樹脂(A−3)5gに(b)成分としてNIKALAC MW−100LMを1g、溶剤としてGBLを10g加えてワニス(W−5)を作製し、上記の方法で機械特性の評価を行なった。 1 g of NIKACAL MW-100LM as the component (b) and 10 g of GBL as the solvent are added to 5 g of the obtained resin (A-3) to prepare a varnish (W-5), and the mechanical properties are evaluated by the above method. It was.
実施例6
ジアミンを4,4’−ジアミノジフェニルエーテル2.60g(0.013モル)と3,5−ジアミノベンジルアルコール0.28g(0.002モル)と1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン0.25g(0.001モル)に、末端封止剤を4−アミノフェノール0.87g(0.008モル)に変更する以外は実施例5と同様の方法で重合反応を行ない、側鎖にメチロール基を有するポリイミド前駆体樹脂(A−4、フェノール性水酸基量0.7mol/kg)の粉末を得た。
Example 6
Diamine was added to 4.60 g (0.013 mol) of 4,4′-diaminodiphenyl ether, 0.28 g (0.002 mol) of 3,5-diaminobenzyl alcohol and 1,3-bis (3-aminopropyl) tetramethyldiamine. A polymerization reaction was carried out in the same manner as in Example 5 except that the terminal blocking agent was changed to 0.87 g (0.008 mol) of 4-aminophenol to 0.25 g (0.001 mol) of siloxane, and the side chain was changed. A powder of a polyimide precursor resin having a methylol group (A-4, phenolic hydroxyl group content 0.7 mol / kg) was obtained.
得られた樹脂(A−4)5gに(b)成分としてNIKALAC MX−270を1g、溶剤としてGBLを10g加えてワニス(W−6)を作製し、上記の方法で機械特性の評価を行なった。 1 g of NIKALAX MX-270 as component (b) and 10 g of GBL as solvent are added to 5 g of the obtained resin (A-4) to prepare varnish (W-6), and mechanical properties are evaluated by the above method. It was.
実施例7
乾燥窒素気流下、BAHF5.86g(0.016モル)、1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン0.25g(0.001モル)をNMP80gに溶解させた。ここにODPA4.34g(0.014モル)をNMP10gとともに加えて、20℃で1時間反応させ、次いで50℃で4時間反応させた。その後、キシレンを10g添加し、水をキシレンとともに共沸しながら、150℃で5時間撹拌した。その後、1時間かけて50℃まで冷却し、ODPA1.86g(0.006モル)をNMP10gとともに追加して50℃で1時間撹拌し、さらに末端封止剤として4−メトキシメチルアニリン0.82g(0.006モル)をNMP5gとともに加えて50℃で1時間撹拌した。撹拌終了後、溶液を室温まで冷却した後、溶液を水1Lに投入して白色沈殿を得た。この沈殿を濾過で集めて、水で3回洗浄した後、80℃の真空乾燥機で20時間乾燥し、末端にメトキシメチル基を有するポリイミド樹脂(A−5、フェノール性水酸基量2.6mol/kg)の粉末を得た。
Example 7
Under a dry nitrogen stream, 5.86 g (0.016 mol) of BAHF and 0.25 g (0.001 mol) of 1,3-bis (3-aminopropyl) tetramethyldisiloxane were dissolved in 80 g of NMP. To this, 4.34 g (0.014 mol) of ODPA was added together with 10 g of NMP and reacted at 20 ° C. for 1 hour, and then reacted at 50 ° C. for 4 hours. Thereafter, 10 g of xylene was added, and the mixture was stirred at 150 ° C. for 5 hours while azeotropically distilling water with xylene. Thereafter, the mixture was cooled to 50 ° C. over 1 hour, and 1.86 g (0.006 mol) of ODPA was added together with 10 g of NMP and stirred at 50 ° C. for 1 hour, and further 0.82 g of 4-methoxymethylaniline as a terminal blocking agent ( 0.006 mol) was added together with 5 g of NMP and stirred at 50 ° C. for 1 hour. After completion of the stirring, the solution was cooled to room temperature and then poured into 1 L of water to obtain a white precipitate. This precipitate was collected by filtration, washed with water three times, and then dried in a vacuum dryer at 80 ° C. for 20 hours to obtain a polyimide resin having a methoxymethyl group at the end (A-5, phenolic hydroxyl group amount 2.6 mol / kg) of powder was obtained.
得られた樹脂(A−5)5gに(b)成分としてNIKALAC MX−270を1g、溶剤としてGBLを10g加えてワニス(W−7)を作製し、上記の方法で機械特性の評価を行なった。 1 g of NIKACALAC MX-270 as component (b) and 10 g of GBL as solvent are added to 5 g of the obtained resin (A-5) to prepare a varnish (W-7), and mechanical properties are evaluated by the above method. It was.
実施例8
末端封止剤を3,5−ビス(ヒドロキシメチル)アニリン0.92g(0.006モル)に変更する以外は実施例7と同様の方法で重合反応を行ない、1つの末端にメチロール基を2つずつ有するポリイミド樹脂(A−6、フェノール性水酸基量2.6mol/kg)の粉末を得た。
Example 8
The polymerization reaction was carried out in the same manner as in Example 7 except that the end-capping agent was changed to 0.92 g (0.006 mol) of 3,5-bis (hydroxymethyl) aniline, and 2 methylol groups were added to one end. A powder of polyimide resin (A-6, phenolic hydroxyl group content 2.6 mol / kg) was obtained.
得られた樹脂(A−6)5gに(b)成分としてNIKALAC MX−270を1g、溶剤としてGBLを10g加えてワニス(W−8)を作製し、上記の方法で機械特性の評価を行なった。 1 g of NIKACAL MX MX-270 as component (b) and 10 g of GBL as a solvent were added to 5 g of the obtained resin (A-6) to prepare a varnish (W-8), and mechanical properties were evaluated by the above method. It was.
実施例9
実施例1で得られた樹脂(A−1)5gに(b)成分としてNIKALAC MX−270を1g、光酸発生剤として合成例2で得られたキノンジアジド化合物0.5g、接着改良剤としてビニルトリメトキシシラン0.05g、および溶剤としてGBLを12g加えてポジ型感光性のワニス(W−9)を作製し、上記の方法で機械特性の評価を行なった。
Example 9
5 g of the resin (A-1) obtained in Example 1, 1 g of NIKALAX MX-270 as component (b), 0.5 g of the quinonediazide compound obtained in Synthesis Example 2 as a photoacid generator, and vinyl as an adhesion improver A positive photosensitive varnish (W-9) was prepared by adding 0.05 g of trimethoxysilane and 12 g of GBL as a solvent, and mechanical properties were evaluated by the above-described method.
得られたワニス(W−9)を、6インチのシリコンウェハー上に120℃で4分間のベーク後の膜厚が10μmになるように、塗布現像装置Mark−7を用いてスピンコート法で塗布およびプリベークを行なった。膜厚は光干渉式膜厚測定装置ラムダエースSTM−602(大日本スクリーン製造(株)製)を使用して、屈折率1.629で測定した。露光機i線ステッパーDSW−8000(GCA社製)にパターンの切られたレチクルをセットし、50〜1000mJ/cm2の露光量で50mJ/cm2ステップで露光した。露光後、Mark−7の現像装置を用いて、2.38重量%のテトラメチルアンモニウム水溶液(三菱ガス化学(株)製、ELM−D)を用いてパドル法で現像液の吐出時間10秒、パドル時間50秒の現像を2回繰り返し、その後純水でリンス後、振り切り乾燥し、ポジ型のパターンを得た。パターンを光学顕微鏡で観察したところ、450mJ/cm2以上のところで5μmのパターンが解像していた。また、現像後の膜厚は8.9μmであった。 The obtained varnish (W-9) was applied onto a 6-inch silicon wafer by spin coating using a coating / developing apparatus Mark-7 so that the film thickness after baking at 120 ° C. for 4 minutes was 10 μm. And pre-baked. The film thickness was measured at a refractive index of 1.629 using an optical interference type film thickness measuring device Lambda Ace STM-602 (Dainippon Screen Mfg. Co., Ltd.). Set the reticle cut the pattern exposure machine i-line stepper DSW-8000 (GCA Corp.), was exposed at 50 mJ / cm 2 step at an exposure amount of 50~1000mJ / cm 2. After the exposure, using a Mark-7 developing device, a 2.38 wt% aqueous solution of tetramethylammonium (manufactured by Mitsubishi Gas Chemical Co., Ltd., ELM-D) is used for a developer discharge time of 10 seconds by the paddle method. Development with a paddle time of 50 seconds was repeated twice, then rinsed with pure water and then shaken and dried to obtain a positive pattern. When the pattern was observed with an optical microscope, a 5 μm pattern was resolved at 450 mJ / cm 2 or more. Further, the film thickness after development was 8.9 μm.
実施例10
実施例1で得られた樹脂(A−1)5gに(b)成分としてNIKALAC MX−270を1g、不飽和結合を有する重合性化合物としてPDBE−200(商品名、(株)日本油脂製)2.0g、ジペンタエリスリトールヘキサアクリレート(商品名DPHA、日本化薬(株)製)0.5g、光重合開始剤としてOXE02(商品名、チバスペシャルティケミカルズ(株)製)0.6g、接着改良剤としてビニルトリメトキシシラン0.05g、および溶剤としてGBLを16g加えてネガ型感光性のワニス(W−10)を作製し、上記の方法で機械特性の評価を行なった。
Example 10
1 g of NIKALAC MX-270 as the component (b) and 5 g of the resin (A-1) obtained in Example 1, and PDBE-200 as a polymerizable compound having an unsaturated bond (trade name, manufactured by NOF Corporation) 2.0 g, dipentaerythritol hexaacrylate (trade name DPHA, manufactured by Nippon Kayaku Co., Ltd.) 0.5 g, photopolymerization initiator OXE02 (trade name, manufactured by Ciba Specialty Chemicals Co., Ltd.) 0.6 g, improved adhesion A negative photosensitive varnish (W-10) was prepared by adding 0.05 g of vinyltrimethoxysilane as an agent and 16 g of GBL as a solvent, and the mechanical properties were evaluated by the above method.
得られたワニス(W−10)を、6インチのシリコンウェハー上に100℃で3分間のベーク後の膜厚が10μmになるように、塗布現像装置Mark−7を用いてスピンコート法で塗布およびプリベークを行なった。膜厚はラムダエースSTM−602を使用して、屈折率1.629で測定した。全波長露光機(ウルトラテック(株)製、全波長ステッパーSpectrum 3e)にパターンの切られたレチクルをセットし、露光量500mJ/cm2(i線換算)で全波長露光を行なった。露光後の被膜に対して、Mark−7のホットプレートを用いて100℃で1分間熱処理を行なった。Mark−7の現像装置を用いて、2.38重量%のテトラメチルアンモニウム水溶液を用いてパドル法で現像液の吐出時間10秒、パドル時間80秒の現像を行ない、その後純水でリンス後、振り切り乾燥し、ネガ型のパターンを得た。パターンを光学顕微鏡で観察したところ、10μmのパターンが解像していた。また、現像後の膜厚は8.3μmであった。 The obtained varnish (W-10) was coated on a 6-inch silicon wafer by spin coating using a coating and developing apparatus Mark-7 so that the film thickness after baking at 100 ° C. for 3 minutes was 10 μm. And pre-baked. The film thickness was measured at a refractive index of 1.629 using Lambda Ace STM-602. A reticle with a cut pattern was set in a full-wave exposure machine (Ultratech Co., Ltd., full-wavelength stepper Spectrum 3e), and full-wavelength exposure was performed with an exposure amount of 500 mJ / cm 2 (i-line conversion). The exposed film was heat-treated at 100 ° C. for 1 minute using a Mark-7 hot plate. Using a development device of Mark-7, development is performed with a 2.38 wt% tetramethylammonium aqueous solution by a paddle method with a developer discharge time of 10 seconds and a paddle time of 80 seconds, and then rinsed with pure water. It was shaken and dried to obtain a negative pattern. When the pattern was observed with an optical microscope, a 10 μm pattern was resolved. The film thickness after development was 8.3 μm.
比較例1
末端封止剤を4−アミノフェノール0.65g(0.006モル)に変更する以外は実施例7と同様の方法で重合反応を行ない、メチロール系基をもたないポリイミド樹脂(A−7、フェノール性水酸基量3.1mol/kg)の粉末を得た。
Comparative Example 1
Except for changing the end-capping agent to 4-aminophenol 0.65 g (0.006 mol), a polymerization reaction is carried out in the same manner as in Example 7, and a polyimide resin having no methylol group (A-7, A powder having a phenolic hydroxyl group content of 3.1 mol / kg) was obtained.
得られた樹脂(A−7)5gに(b)成分としてNIKALAC MX−270を1g、溶剤としてGBLを10g加えてワニス(W−11)を作製し、上記の方法で機械特性の評価を行なった。 1 g of NIKALAX MX-270 as component (b) and 10 g of GBL as solvent are added to 5 g of the obtained resin (A-7) to produce varnish (W-11), and mechanical properties are evaluated by the above method. It was.
比較例2
末端封止剤を4−エチニルアニリン0.94g(0.008モル)に変更する以外は実施例5と同様の方法で重合反応を行ない、メチロール系基をもたないポリイミド前駆体およびポリベンゾオキサゾール前駆体構造を含む樹脂(A−8、フェノール性水酸基量1.8mol/kg)の粉末を得た。
Comparative Example 2
A polyimide precursor having no methylol group and polybenzoxazole was subjected to a polymerization reaction in the same manner as in Example 5 except that the terminal blocking agent was changed to 0.94 g (0.008 mol) of 4-ethynylaniline. A resin powder (A-8, phenolic hydroxyl group content 1.8 mol / kg) containing a precursor structure was obtained.
得られた樹脂(A−8)5gに(b)成分としてNIKALAC MX−270を1g、溶剤としてGBLを10g加えてワニス(W−12)を作製し、上記の方法で機械特性の評価を行なった。 1 g of NIKALAX MX-270 as component (b) and 10 g of GBL as solvent are added to 5 g of the obtained resin (A-8) to prepare varnish (W-12), and mechanical properties are evaluated by the above method. It was.
比較例3
実施例1で得られた樹脂(A−1)5gに溶剤としてGBLを8g加えてワニス(W−13)を作製し、上記の方法で機械特性の評価を行なった。
Comparative Example 3
8 g of GBL as a solvent was added to 5 g of the resin (A-1) obtained in Example 1 to prepare a varnish (W-13), and mechanical properties were evaluated by the above method.
比較例4
乾燥窒素気流下、BAHF0.73g(0.002モル)、4,4’−ジアミノジフェニルエーテル2.80g(0.014モル)、1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン0.25g(0.001モル)をNMP80gに溶解させた。ここにODPA4.34g(0.014モル)をNMP10gとともに加えて、20℃で1時間反応させ、次いで50℃で4時間反応させた。その後、キシレンを10g添加し、水をキシレンとともに共沸しながら150℃で撹拌したところ、約3時間後にフラスコ内で樹脂がゲル化しており、目的のポリイミド樹脂粉末は得られなかった。高温重合中の系中のフェノール性水酸基量は樹脂を粉末に換算して0.4mol/kgであった。
Comparative Example 4
Under a dry nitrogen stream, BAHF 0.73 g (0.002 mol), 4,4′-diaminodiphenyl ether 2.80 g (0.014 mol), 1,3-bis (3-aminopropyl) tetramethyldisiloxane 0.25 g (0.001 mol) was dissolved in 80 g of NMP. To this, 4.34 g (0.014 mol) of ODPA was added together with 10 g of NMP and reacted at 20 ° C. for 1 hour, and then reacted at 50 ° C. for 4 hours. Thereafter, 10 g of xylene was added, and the mixture was stirred at 150 ° C. while azeotropically distilling water with xylene. After about 3 hours, the resin gelled in the flask, and the desired polyimide resin powder was not obtained. The amount of phenolic hydroxyl group in the system during high temperature polymerization was 0.4 mol / kg when the resin was converted to powder.
上記の評価結果を表1に示す。なお、表1中、「PI」はポリイミドを、「PBO」はポリベンゾオキサゾールを示し、「nd」とは膜が脆いため測定不可であることを示す。 The evaluation results are shown in Table 1. In Table 1, “PI” indicates polyimide, “PBO” indicates polybenzoxazole, and “nd” indicates that the film is brittle and cannot be measured.
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