JP2010219145A - Film forming device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film forming device which uniformly mixes first and second material gases near an injector, can let them reach a substrate and can uniformly arrange film quality and film thickness of a thin film to be formed between the substrates and in a face when letting the first and second material gases react in a reaction container and forming the thin film on a substrate surface. <P>SOLUTION: First and second injectors 11 and 12 discharging the first and second material gases are installed in the reaction container. The first and second injectors 11 and 12 have a plurality of first discharge ports N1 and N2 discharging the first and second material gases to the substrate. A flow path FL1 of the first material gas discharged from the first discharge port N1 is almost the same as a flow path FL2 of the second material gas discharged from the corresponding second discharge port N2. The first material gas is mixed with the second material gas before it reaches the substrate after it is discharged from the first discharge port N1. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a film forming apparatus for performing a film forming process for forming a thin film on a substrate surface in a reaction vessel of a vertical heat treatment apparatus, and in particular, a first source gas and a second source gas in a reaction vessel. The present invention relates to a film forming apparatus for reacting and forming a thin film on a substrate surface.

  In recent years, the materials used for semiconductor devices are expanding from inorganic materials to organic materials, and the characteristics and manufacturing processes of semiconductor devices can be optimized due to the characteristics of organic materials not found in inorganic materials. .

  One such organic material is polyimide. Polyimide can be used as an insulating film because of its high adhesiveness and low leakage current, and can also be used as an insulating film in a semiconductor device.

  As a method for forming such a polyimide film, vapor deposition polymerization using pyromellitic anhydride (PMDA) and 4,4′-oxydianiline (PMDA) as raw material monomers is used. Membrane methods are known.

  As a film formation apparatus for performing such film formation, a vertical reaction container similar to a reaction container of a vertical heat treatment apparatus that oxidizes a substrate and forms an oxide film on the surface of the substrate may be used. The reaction vessel of the vertical heat treatment apparatus is composed of a vertical quartz reaction tube that accommodates a plurality of substrates to be processed arranged at a predetermined pitch and is evacuated. In addition, the vertical heat treatment apparatus includes an injector that is provided in a reaction vessel and supplies an oxidizing gas or the like to a storage region that stores a substrate that is a target object (for example, see Patent Document 1).

  When a polyimide thin film is formed using PMDA and ODA as raw materials in a film forming apparatus having a structure similar to that of a vertical heat treatment apparatus and having a vertical reaction vessel, PMDA which is a solid raw material is sublimated. The obtained first source gas and the second source gas obtained by vaporizing ODA as the liquid source are simultaneously supplied into the reaction vessel of the film forming apparatus, and the first source gas and the first source gas are fed into the reaction vessel. A thin film made of a reaction product produced by reacting the two source gases is formed on the substrate surface.

  As a method of supplying a plurality of source gases to a film forming apparatus having a vertical reaction vessel, the first source gas and the second source gas are supplied from the injector into the reaction vessel and then mixed and reacted. The so-called premix system in which the first raw material gas and the second raw material gas are already mixed and reacted as a reaction gas when the raw material gas is supplied from the injector into the reaction vessel. There is. Among these, in order to perform a postmix system, a plurality of injectors may be provided in the reaction vessel (see, for example, Patent Document 2).

JP 2005-175441 A JP 2004-343017 A

  However, when the above-described film forming apparatus is used to react the first source gas and the second source gas in the reaction vessel to form a thin film on the substrate surface, there are the following problems.

  In the case of the post-mix method described above, it may be difficult to make the concentration of the first source gas or the second source gas uniform in all positions of the storage region in which the substrate is stored in the reaction vessel. is there. Therefore, there is a problem that the film quality and film thickness of the thin film formed on the substrate surface in the reaction vessel are not uniform between the substrates and within the substrate surface.

  On the other hand, in the case of the premix method described above, there is a case where a film is deposited on the inner wall of the injector while the reaction gas flows through the injector. In particular, since the film forming speed is high at the optimum film forming temperature, there is a problem that most of the first source gas and the second source gas are formed on the inner wall of the injector, and the injector is clogged so that the source gas cannot be supplied. .

  The present invention has been made in view of the above points. In the case where a first raw material gas and a second raw material gas are reacted in a reaction vessel to form a thin film on the substrate surface, the first raw material gas is used. And the second source gas can be uniformly mixed in the vicinity of the first injector and reach the substrate, and the film quality and thickness of the thin film formed on the substrate surface are uniform between the substrates and within the substrate surface. An object of the present invention is to provide a film forming apparatus that can be aligned with the above.

  In order to solve the above-described problems, the present invention is characterized by the following measures.

  1st invention is the film-forming apparatus which makes 1st raw material gas and 2nd raw material gas react in a reaction container, and forms a thin film on the substrate surface, Comprising: It is provided in the said reaction container, The said reaction A first injector that discharges a first source gas into a container; and a second injector that is provided in the reaction container and discharges a second source gas into the reaction container. The injector is provided with a plurality of first discharge ports for discharging the first source gas toward the substrate, and the second injector discharges the second source gas toward the substrate. A second discharge port is provided, and a flow path of the first source gas discharged from the first discharge port is provided for the second source gas discharged from the corresponding second discharge port. The first source gas is substantially the same as the flow path, and the first discharge gas is After being discharged from the mouth, before reaching the substrate, characterized in that it is mixed with the second material gas.

  A film forming apparatus according to a second aspect of the present invention is the film forming apparatus according to the first aspect of the present invention, wherein the first injector is housed inside the second injector.

  A film forming apparatus according to a third invention is the film forming apparatus according to the second invention, wherein the first discharge port and the second discharge port corresponding to each other are the same perpendicular to the longitudinal direction of the reaction vessel. It is provided in the surface of this.

  A film forming apparatus according to a fourth aspect of the present invention is the film forming apparatus according to the second or third aspect of the present invention, further comprising a heater housed inside the second injector.

  A film forming apparatus according to a fifth aspect of the present invention is the film forming apparatus according to the second or third aspect of the present invention, further comprising a heater disposed close to the outside of the second injector.

  A film forming apparatus according to a sixth invention is the film forming apparatus according to the fourth or fifth invention, wherein the heater supplies the first source gas and the second source gas from the temperatures of the plurality of substrates. Is heated to a high temperature.

  According to the present invention, the first source gas and the second source gas can be uniformly mixed in the vicinity of the first injector and then reach the substrate, and the film quality of the thin film formed on the substrate surface, The film thickness can be made uniform in the substrate plane.

It is a figure including the partial longitudinal cross-section which shows the structure of the film-forming apparatus which concerns on the 1st Embodiment of this invention. It is a figure including the partial cross section for demonstrating the film-forming apparatus which concerns on the 1st Embodiment of this invention. It is a cross-sectional view which shows typically the structure of the injector of the film-forming apparatus which concerns on the 1st Embodiment of this invention. It is a perspective view including the partial longitudinal section which shows typically the composition of the injector of the film deposition system concerning a 1st embodiment of the present invention. It is a figure for demonstrating the process in which the 1st source gas discharged from the injector of the film-forming apparatus which concerns on the 1st Embodiment of this invention, and the 2nd source gas are mixed. It is a cross-sectional view which shows typically the structure of the injector of the film-forming apparatus which concerns on the 1st modification of the 1st Embodiment of this invention. It is a cross-sectional view which shows typically the structure of the injector of the film-forming apparatus which concerns on the 2nd modification of the 1st Embodiment of this invention. It is a cross-sectional view which shows typically the structure of the injector of the film-forming apparatus which concerns on the 2nd Embodiment of this invention.

Next, a mode for carrying out the present invention will be described with reference to the drawings.
(First embodiment)
Initially, the film-forming apparatus which concerns on the 1st Embodiment of this invention is demonstrated. The film formation apparatus according to this embodiment is a film formation apparatus that forms a thin film on a substrate surface by reacting a first source gas and a second source gas in a reaction vessel.

  FIG. 1 is a diagram including a partial longitudinal section showing the configuration of the film forming apparatus according to the present embodiment. FIG. 2 is a view including a partial cross section for explaining the film forming apparatus according to the present embodiment, and is a view showing the cross section of the reaction vessel and the injector provided inside the reaction vessel together with the wafer. is there.

  As shown in FIG. 1, the film forming apparatus 20 according to the present embodiment can install a plurality of wafers W on which a polyimide film is formed in a chamber 21 that can be evacuated by a vacuum pump (not shown). A wafer boat 22 is provided. The chamber 21 has an injector 10 for supplying vaporized PMDA and ODA. An opening is provided in the side surface of the injector 10, and PMDA and ODA vaporized by the vaporizer are supplied to the wafer W as indicated by arrows in the drawing. The supplied vaporized PMDA and ODA react on the wafer W to form a polyimide film by vapor deposition polymerization. Note that vaporized PMDA, ODA, and the like that do not contribute to the formation of the polyimide film flow as they are and are discharged out of the chamber 21 through the exhaust port 25. Further, the wafer boat 22 is configured to be rotated by a rotating unit 26 so that a polyimide film is uniformly formed on the wafer W. Furthermore, a heater 27 for heating the wafer W in the chamber 21 to a constant temperature is provided outside the chamber 21. The chamber 21 corresponds to the reaction container of the present invention.

  In addition, a PMDA vaporizer 29 and an ODA vaporizer 30 are connected to the injector 10 via valves 31 and 32, respectively, and the PMDA and ODA vaporized from the PMDA vaporizer 29 and the ODA vaporizer 30 are supplied.

  The PMDA vaporizer 29 is supplied with high-temperature nitrogen gas as a carrier gas, and is supplied in a vaporized state by sublimating PMDA in the PMDA vaporizer 29. For this reason, the PMDA vaporizer 29 is maintained at a temperature of 260 ° C. Further, in the ODA vaporizer 30, high temperature nitrogen gas is supplied as a carrier gas, and ODA heated to a high temperature and bubbled with the supplied nitrogen gas is converted into ODA vapor contained in the nitrogen gas. Supply in a vaporized state. For this reason, the ODA vaporizer 30 is maintained at a temperature of 220 ° C.

  Thereafter, the vaporized PMDA and ODA are supplied to the first injector 11 and the second injector 12 in the injector 10 through the valves 31 and 32, as will be described later. The injector 10 connected from the PMDA vaporizer 29 via the valve 31 is kept at 260 ° C. This is because if it is 260 degreeC, even if it is the state which mixed vaporized PMDA and vaporized ODA, it does not react and a polyimide film is not formed. In other words, it is for preventing a polyimide film from being formed in the injector 10.

  The wafer W is heated to 200 ° C. by an external heater 27 provided in the chamber 21. By setting the temperature of the wafer W to 200 ° C., the vaporized PMDA and the vaporized ODA react to form a polyimide film on the wafer W.

  Next, the structure of the injector of the film forming apparatus according to the present embodiment will be described with reference to FIGS. FIG. 3 is a cross-sectional view schematically showing the configuration of the injector of the film forming apparatus according to the present embodiment. FIG. 4 is a perspective view including a partial longitudinal section schematically showing the configuration of the injector of the film forming apparatus according to the present embodiment.

  In the present embodiment, as shown in FIGS. 1 and 2, the first injector 11 and the second injector 12 are integrally provided as an injector 10. When the space in which the wafers W in the chamber 21 are arranged in the vertical direction and is accommodated is defined as the accommodation region S, the injector 10 extends along the longitudinal direction of the chamber 21 so that the entire region of the accommodation region S can be covered. It has become. The injector 10 discharges the first source gas and the second source gas into the accommodation region S, and has an outlet N corresponding to a second outlet N2 described later. A plurality of discharge ports N are formed at a substantially predetermined pitch along the longitudinal direction, and the discharge ports N are arranged in a horizontal direction with respect to the entire region of the storage region S and toward the center of the chamber 21 in which the substrate is stored. The first source gas and the second source gas can be discharged and supplied.

  In the present embodiment, as will be described later, since the first injector 11 is housed inside the second injector 12, the discharge port N of the injector 10 is the second of the second injector 12. Corresponds to the discharge port N2.

  The accommodation area S is set slightly wider in the vertical direction than the length of the wafer boat 22. The gas introduced into the chamber 21 from the first injector 11 and the second injector 12 is discharged from the exhaust port 25.

  As shown in FIGS. 3 and 4, the injector 10 includes a first injector 11, a second injector 12, a gas heater 13, and a temperature sensor 14.

  The gas heater 13 corresponds to the heater in the present invention.

  The first injector 11 and the second injector 12 are both quartz tubes having a circular cross-sectional shape. The diameter of the first injector 11 is smaller than the diameter of the second injector 12, and the first injector 11 is accommodated inside the second injector 12. That is, the first injector 11 and the second injector 12 have a double tube structure in which the first injector 11 is an inner tube and the second injector 12 is an outer tube.

  The first injector 11 is provided with a plurality of first discharge ports N1 for discharging the first source gas along the longitudinal direction of the first injector 11. The cross section shown in FIG. 3 is a cross section perpendicular to the longitudinal direction of the first injector 11 at a position where one of the plurality of first discharge ports N1 is provided. Similarly, the second injector 12 is also provided with a plurality of second discharge ports N2 for discharging the second source gas along the longitudinal direction of the second injector 12. Moreover, the cross section shown in FIG. 3 is a cross section perpendicular | vertical to the longitudinal direction of the 2nd injector 12 in the position in which one 2nd discharge outlet N2 is provided among several. In other words, in the present embodiment, each first discharge port N1 and each second discharge port N2 have a one-to-one correspondence, and one first discharge port N1 and one first discharge port thereof. The second discharge port N2 corresponding to the discharge port N1 is provided at the same position along the longitudinal direction of the first injector 11 and the second injector 12, that is, the longitudinal direction of the chamber 21. In other words, the first discharge port N1 and the second discharge port N2 corresponding to each other are provided on the same surface perpendicular to the longitudinal direction of the first injector 11 and the second injector 12. In the present embodiment, since the film forming apparatus has the same arrangement as the vertical heat treatment apparatus in which the chambers are installed vertically, one first discharge port N1 and one first discharge port N1. Are provided at the same height as the second discharge port N2.

  As shown in FIG. 2 to FIG. 4, the first injector 11 includes an inner portion of the second injector 12 such that the first discharge port N1 is close to the second discharge port N2 of the second injector 12. Is housed. The first injector 11 is provided such that the discharge direction of the first source gas discharged from the first discharge port N1 is directed toward the center of the chamber 21 in which the substrate is provided. The second injector 12 is also provided such that the discharge direction of the second source gas discharged from the second discharge port N2 is directed toward the center of the chamber 21 in which the substrate is provided. As an example, as shown in FIG. 3, the center C1 of the first injector, the center C2 of the second injector, the first outlet N1 of the first injector 11, and the second outlet of the second injector 12 N2 is arranged in a straight line, and the center C2 of the second injector, the center C1 of the first injector, the first discharge port N1 of the first injector 11, and the second discharge of the second injector 12. It arrange | positions in order of the exit N2. With this arrangement, in the film forming apparatus according to the present embodiment, the flow path FL1 of the first source gas discharged from one first discharge port N1 is one corresponding second line. It is substantially the same as the flow path FL2 of the second source gas discharged from the discharge port N2.

  As shown in FIG. 3 and FIG. 4, the gas heater 13 and the temperature sensor 14 are inside the second injector 12 that houses the first injector 11, and are outside the first injector 11. Is housed in. The gas heater 13 extends in the space inside the second injector 12 from the lower end (one end) to the upper end (the other end) of the second injector 12 along the longitudinal direction of the second injector 12. It is folded at the upper end (the other end) of the injector 12, and the folded tip end portion extends to the lower end (one end) of the second injector 12. That is, the gas heater 13 is formed in a U shape along the longitudinal direction of the second injector 12. The temperature sensor 14 extends from the lower end (one end) of the second injector 12 toward the upper end (the other end) in the space inside the second injector 12 along the longitudinal direction of the second injector 12. It extends. As the temperature sensor 14, a thermocouple, a resistance thermometer, etc. can be used, for example.

  As shown in FIG. 1, the heater power supply line 13 a of the gas heater 13 is connected to a power supply unit 16 whose supply power is controlled by a temperature controller 15 that is a temperature control unit. The temperature sensor 14 is connected to the temperature controller 15 and feeds back a temperature detection value of the temperature inside the second injector 12. Further, in the gas heater 13, the amount of heat generated is controlled by the temperature controller 15 based on the temperature detection value of the temperature sensor 14 and the set temperature value. Therefore, the gas heater 13 accommodated in the space outside the first injector 11 inside the second injector 12 that accommodates the first injector 11 heats the processing atmosphere in the chamber 21. The temperature is controlled by the temperature controller 15 independently of the heater 27 that performs the first source gas in the first injector 11 and the second source material in the second injector 12 in the range of 200 ° C. to 1000 ° C., for example. The gas can be heated.

  Next, in the film formation apparatus according to the present embodiment, the first source gas and the second source gas discharged from the injector of the film formation apparatus according to the first embodiment of the present invention are the first The effect of reaching the substrate after being uniformly mixed in the vicinity of the injector will be described. FIG. 5 is a diagram for explaining a process in which the first source gas and the second source gas discharged from the injector of the film forming apparatus according to the present embodiment are mixed. FIG. 5 is an enlarged view of a portion surrounded by a small circle I in FIG.

  The first source gas flows in the first injector 11 along the direction perpendicular to the paper surface of FIG. 5 and is discharged into the second injector 12 from the first discharge port N1. Further, the first source gas discharged from the first discharge port N1 into the second injector 12 passes from the second discharge port N2 of the second injector 12 to the center of the chamber 21 in which the substrate is accommodated. It is discharged toward. On the other hand, the second source gas flows in the second injector 12 along a direction perpendicular to the paper surface of FIG. 5, and the chamber in which the substrate is accommodated from the second discharge port N2 of the second injector 12. The liquid is discharged toward the center of 21.

  Here, as described above, the first injector 11 and the second injector 12 include the center C 1 of the first injector 11, the center C 2 of the second injector 12, and the first discharge port of the first injector 11. N1 and the second discharge port N2 of the second injector 12 are arranged on the same straight line, and are provided so that the first discharge port N1 is close to the second discharge port N2. . Therefore, the first raw material gas flows straight through the first discharge port N1 and the second discharge port N2 in the region surrounded by the small circle II in FIG. Flows along FL1. Further, the second source gas flows so as to gather from the left and right or upper and lower sides of the first source gas flow path FL1 toward the first source gas flow path FL1, and is surrounded by a small circle II in FIG. In this region, the gas flows along the flow path FL2 of the second source gas that is bent toward the second discharge port N2.

  That is, in the region surrounded by the small circle II in FIG. 5, both the first source gas and the second source gas flow so as to gather toward the second discharge port N2. Therefore, the flow path FL1 of the first source gas and the flow path FL2 of the second source gas after being bent are substantially the same. Further, since the first source gas flow path FL1 and the bent second source gas flow path FL2 are substantially the same, the region surrounded by the small circle II in FIG. 5, particularly the second discharge port. In a narrow region near N2, the first source gas and the second source gas are mixed. Therefore, the first source gas and the second source gas are discharged while being uniformly mixed when supplied from the injector into the chamber.

  Here, when the inside of the second injector 12 is controlled to the same temperature as the substrate housed in the center of the chamber, the substrate temperature is set to an optimum temperature (film formation) for forming a thin film on the substrate surface. When the temperature is controlled, the inside of the second injector 12 is also equal to the film forming temperature, so that the first source gas and the second source gas react in the region surrounded by the small circle II in FIG. The film is deposited on the inner and outer walls of the second injector 12 and the outer wall of the first injector 11 in the vicinity of the discharge port N2.

  However, in the present embodiment, the gas heater 13 can maintain the interiors of the second injector 12 and the first injector 11 at a temperature higher than the film forming temperature, which is the temperature of the substrate. In the case where the first source gas and the second source gas are reacted, there is a temperature range in which the film formation rate is slow in a temperature range higher than the optimum film formation temperature for film formation. By holding the inside of the second injector 12 and the inside of the first injector 11 at a temperature higher than the film forming temperature by the gas heater 13, the first source gas and the second source gas are Although it is uniformly mixed when supplied into the chamber from the injector, almost no film is formed in the vicinity of the injector and the injector. As a result, the first source gas and the second source gas can reach the substrate with almost no consumption in the vicinity of the injector while maintaining a uniformly mixed state in the vicinity of the injector. As a result, the film quality and thickness of the thin film can be made uniform between the substrates and within the substrate surface without reducing the film formation rate on the substrate surface.

  Next, vapor deposition polymerization in which a polyimide thin film is formed from the first and second source gases using PMDA as the first source gas and ODA as the second source gas will be described.

  PMDA vaporizer 29 in FIG. 1 contained PMDA as a solid raw material in a raw material tank (not shown). On the other hand, a raw material tank (not shown) included in the ODA vaporizer 30 of FIG. 1 was filled with ODA as a liquid raw material. The inside of the chamber 21 was heated to 200 ° C. by the heater 27, and the first injector 11 and the second injector 12 were each heated to 260 ° C. by the gas heater 13.

  Next, the PMDA filled in the PMDA vaporizer 29 is heated to 260 ° C. by a heating mechanism (not shown) included in the PMDA vaporizer 29, and the ODA filled in the ODA vaporizer 30 is transferred to the ODA vaporizer 30. It was heated to 190 ° C. by a heating mechanism that was included and was not shown. Thereafter, the first source gas was introduced into the first injector 11 via the valve 31. Further, the second source gas was introduced into the second injector 12 through the valve 32. The first raw material gas is introduced from the first injector 11 into the second injector 12 through the first discharge port N1, and the first raw material gas and the second raw material gas are introduced into the second injector 12. The mixed first source gas and second source gas were introduced from the second injector 12 into the chamber 21 through the second discharge port N2. At this time, the degree of vacuum in the chamber 21 was about 0.5 Torr.

  Under the above conditions, vapor deposition polymerization was performed while maintaining the PMDA in the raw material tank in the PMDA vaporizer 29 at a constant temperature (260 ° C.). The vapor deposition polymerization at this time was performed in a state where the flow ratio of PMDA and ODA was 1: 1 with the stoichiometric ratio of PMDA and ODA to be supplied. At this time, the polymerization reaction of PMDA and ODA was performed according to the reaction formula shown in the following formula (1).

以上、本実施の形態に係る成膜装置によれば、第１の原料ガスを吐出する第１の吐出口が複数形成された第１のインジェクタを、第２の原料ガスを吐出する第２の吐出口が複数形成された第２のインジェクタの内部に収容する。第１のインジェクタを第２のインジェクタの内部に収容する際に、第１の原料ガスの流路が第２の原料ガスの流路と略同一上になるように、すなわち各第１の吐出口が対応する各第２の吐出口の近傍になるように、配置する。これにより、第１の原料ガス及び第２の原料ガスは、第１のインジェクタの近傍で均一に混合されてから基板に到達するため、基板表面に成膜する薄膜の膜質、膜厚を基板間及び基板面内で均一に揃えることができる。

As described above, according to the film forming apparatus of the present embodiment, the second injector that discharges the second source gas is used for the first injector in which a plurality of first discharge ports for discharging the first source gas are formed. The discharge port is accommodated in the second injector in which a plurality of discharge ports are formed. When the first injector is accommodated in the second injector, the flow path of the first raw material gas is substantially the same as the flow path of the second raw material gas, that is, each first discharge port Are arranged in the vicinity of the corresponding second discharge ports. Thus, since the first source gas and the second source gas reach the substrate after being uniformly mixed in the vicinity of the first injector, the film quality and thickness of the thin film formed on the substrate surface are changed between the substrates. And it can arrange uniformly in a substrate surface.

  In the present embodiment, the first discharge port and the second discharge port corresponding to each other are provided on the same plane perpendicular to the longitudinal direction of the first injector and the second injector, but are close to each other. The first injector and the second injector need not be provided on the same plane perpendicular to the longitudinal direction. That is, when the vertical heat treatment apparatus has the same configuration and the longitudinal direction is perpendicular to the horizontal plane, the first discharge port and the second discharge port are not provided on the same horizontal plane, and are somewhat different from each other. There may be a difference in height.

  In the present embodiment, a plurality of first discharge ports and a plurality of second discharge ports are provided. However, a plurality of first discharge ports and a plurality of second discharge ports may be provided. Even when one each of the first discharge port and the second discharge port are provided, as long as the first discharge port and the second discharge port are provided so as to have a cross-sectional structure as shown in FIG. Is uniformly mixed in the vicinity of the first injector and then supplied into the chamber, so that the film quality and thickness of the thin film formed on the substrate surface can be made uniform between the substrates and within the substrate surface.

  In the present embodiment, the first injector is provided along the longitudinal direction of the chamber that is the reaction vessel. However, the first source gas can be uniformly supplied to the substrate in the processing region S. For example, it may not be provided along the longitudinal direction of the chamber which is a reaction vessel.

  In the present embodiment, the second injector is also provided along the longitudinal direction of the chamber that is the reaction vessel. However, the second source gas can be uniformly supplied to the substrate in the processing region S. For example, it may not be provided along the longitudinal direction of the chamber which is a reaction vessel.

  In the present embodiment, the first injector is a chamber in which a plurality of first discharge ports that discharge the first source gas toward the substrate perpendicular to the longitudinal direction of the chamber that is the reaction vessel are the reaction vessel. However, as long as the first source gas can be uniformly supplied to the substrate in the processing region S, it may not be provided along the longitudinal direction of the chamber as the reaction vessel. In addition, the first source gas may not be discharged toward the substrate perpendicular to the longitudinal direction.

In the present embodiment, the second injector also has a chamber in which a plurality of second discharge ports that discharge the second source gas toward the substrate perpendicular to the longitudinal direction of the chamber that is the reaction vessel are reaction vessels. However, as long as the second source gas can be uniformly supplied to the substrate in the processing region S, it may not be provided along the longitudinal direction of the chamber as the reaction vessel. In addition, the second source gas may not be discharged toward the substrate perpendicular to the longitudinal direction.
(First modification of the first embodiment)
Next, a first modification of the first embodiment of the present invention will be described with reference to FIG. FIG. 6 is a cross-sectional view schematically showing the configuration of the injector of the film forming apparatus according to this modification. However, in the following text, the same reference numerals are given to the parts described above, and the description may be omitted (the same applies to the following modifications and embodiments).

  The injector of the film forming apparatus according to this modification is different from the first embodiment in that the heater is not housed inside the injector.

  Referring to FIG. 6, in the injector 10 of the film forming apparatus according to the first embodiment, the gas heater 13 is inside the second injector 12 that houses the first injector 11, and the first heater 11 Unlike the case where it is accommodated outside the injector 11, in the injector 10 a of the film forming apparatus according to this modification, the gas heater 13 is provided outside the second injector 12 that accommodates the first injector 11. ing.

  In the example shown in FIG. 6, a temperature sensor 14 that is a thermocouple, for example, is also provided outside the second injector 12 together with the gas heater 13.

  The gas heater 13 and the temperature sensor 14 are for maintaining the first source gas flowing through the first injector 11 and the second source gas flowing through the second injector 12 at a temperature higher than the substrate temperature. Therefore, it is desirable to be in the vicinity of the first injector 11 and the second injector 12. However, if the temperature of the first source gas and the temperature of the second source gas can be controlled, the second injector 12 that houses the first injector 11 as in the first embodiment. 6 and may not be provided outside the first injector 11, or may be provided outside the second injector 12 that houses the first injector 11 as shown in FIG. 6. Good.

Since the gas heater 13 and the temperature sensor 14 are provided outside the second injector 12 that houses the first injector 11, the second source gas flowing through the second injector 12 is supplied to the gas heater 13 or the temperature sensor. The possibility of adhering to the outer wall of 14 is reduced. When the diameter of the tube of the second injector 12 is set to a predetermined value, the cross-sectional area of the region inside the second injector 12 and outside the first injector 11 and through which the second source gas flows. Therefore, for example, the diameter of the first injector 11 can be increased without increasing the diameter of the second injector 12. In this way, the degree of freedom in injector placement and structure design is increased.
(Second modification of the first embodiment)
Next, a second modification of the first embodiment of the present invention will be described with reference to FIG. FIG. 7 is a cross-sectional view schematically showing the configuration of the injector of the film forming apparatus according to this modification.

  The injector of the film forming apparatus according to this modification is different from the first embodiment in that both the first injector and the second injector have a rectangular cross-sectional shape.

  Referring to FIG. 7, in the injector 10 of the film forming apparatus according to the first embodiment, the first injector 11 and the second injector 12 are different from each other in having a circular cross-sectional shape. In the injector 10b of the film forming apparatus according to the example, both the first injector 11a and the second injector 12a have a rectangular cross-sectional shape.

  Both the first injector 11a and the second injector 12a constituting the injector 10b are metal (for example, SUS, aluminum) tubes having a rectangular cross-sectional shape. The cross-sectional dimension of the first injector 11a is smaller than the cross-sectional dimension of the second injector 12a, and the first injector 11a is accommodated inside the second injector 12a. Therefore, similarly to the first embodiment, the first injector 11a and the second injector 12a also have a double tube structure in which the first injector 11a is an inner tube and the second injector 12a is an outer tube. Have.

  Similarly to the first embodiment, the first injector 11a is provided with a plurality of first discharge ports N1 for discharging the first source gas along the longitudinal direction of the first injector 11a. Yes. Similarly, the second injector 12a is also provided with a plurality of second discharge ports N2 for discharging the second source gas along the longitudinal direction of the second injector 12a. In addition, each first discharge port N1 and each second discharge port N2 have a one-to-one correspondence, and correspond to one first discharge port N1 and one first discharge port N1. The second discharge port N2 is provided at the same position along the longitudinal direction of the first injector 11a and the second injector 12a, that is, the longitudinal direction of the chamber 21.

  Further, as shown in FIG. 7, the first discharge port N1 of the first injector 11a and the second discharge port N2 of the second injector 12a are arranged close to each other, and one first discharge port N1. The flow path FL1 of the first source gas discharged from is substantially the same as the flow path FL2 of the second source gas discharged from one corresponding second discharge port N2.

  In the film forming apparatus according to this modification, the gas heater 13b and a temperature sensor (not shown) are located outside the second injector 12a that houses the first injector 11a and in the vicinity of the second injector 12a. Can be provided. By providing the gas heater 13b and a temperature sensor (not shown) in the vicinity of the second injector 12a, the first source gas and the second injector 12a in the first injector 11a, for example, in the range of 200 ° C. to 1000 ° C. The second source gas can be heated. Further, as shown in FIG. 7, the first injector 11 a, the second injector 12 a, and the gas heater 13 b have portions 11 b, 12 b, and 13 c that are bent horizontally in an L shape at the lower end of the chamber 21.

In the film forming apparatus according to the present modification, the injector can be configured by using, for example, a metal (for example, SUS, aluminum) tube having a rectangular cross section, so that the manufacturing cost can be reduced and the injector can be reduced. The degree of freedom in the layout and structure design increases.
(Second Embodiment)
Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 8 is a cross-sectional view schematically showing the configuration of the injector of the film forming apparatus according to the present embodiment.

  The injector of the film forming apparatus according to the present embodiment is different from the first embodiment in that the first injector is not housed inside the second injector.

  Referring to FIG. 8, in the injector 10 of the film forming apparatus according to the first embodiment, the first injector 11 is different from being housed in the second injector 12, and this embodiment The injector 10c of the film forming apparatus according to the present invention is partitioned into an adjacent first injector 11c and second injector 12c.

  Both the first injector 11c and the second injector 12c of the injector 10c have a rectangular cross-sectional shape. As shown in FIG. 8, the first injector 11 c and the second injector 12 c have a discharge port N on the side surface on the substrate side, and an injector 10 c having a rectangular cross-sectional shape communicates in the vicinity of the discharge port N. It is divided into two rooms. Similar to the first embodiment, the injector 10 c extends in the longitudinal direction of the chamber 21 and can cover the entire region of the accommodation region S.

  In the injector 10c, a plurality of discharge ports N are formed at a substantially predetermined pitch along the longitudinal direction, the horizontal direction with respect to the entire region of the storage region S, and the chamber 21 in which the substrate is stored. The first source gas and the second source gas can be discharged and supplied toward the center. The cross section shown in FIG. 8 is a cross section perpendicular to the longitudinal direction of the injector 10c at a position where one of the plurality of discharge ports N is provided. Further, each of the first injector 11c and the second injector 12c, which are two rooms formed by dividing the injector 10c, has a first discharge port N1 and a second discharge port at positions corresponding to the respective discharge ports N. A discharge port N2 is formed. That is, the first injector 11c and the second injector 12c communicate with each other at a position where the first discharge port N1 and the second discharge port N2 are formed.

  In the present embodiment, the first source gas discharged from the first discharge port N1 of the first injector 11c passes through the region surrounded by the small circle III in FIG. 10c is discharged. Further, the second source gas discharged from the second discharge port N2 of the second injector 12c is also discharged from the injector 10c through the discharge port N through the region surrounded by the small circle III in FIG. The The first discharge port N1 and the second discharge port N2 are close to each other. Accordingly, also in the present embodiment, the flow path FL1 of the first source gas discharged from one first discharge port N1 is the second source gas discharged from the corresponding second discharge port N2. And substantially the same as the flow path FL2. Further, since the flow path FL1 of the first source gas and the flow path FL2 of the second source gas are substantially the same, the region surrounded by the small circle III in FIG. The first source gas and the second source gas are mixed. Therefore, the first source gas and the second source gas are discharged while being uniformly mixed when supplied from the injector into the chamber.

  In this embodiment, since the injector 10c is made of a metal (for example, SUS, aluminum) tube having a rectangular cross-sectional shape, the first injector 11c, the second injector 12c, and the gas heater 13b are chambers. 21 has portions 11d, 12d, and 13c bent horizontally in an L shape at the lower end.

  In the present embodiment, the first injector is not structured to be accommodated inside the second injector. However, the first injector is adjacent to the second injector, and one first discharge port and one second discharge port corresponding to the one first discharge port are close to each other. By providing, the flow path of the first source gas becomes substantially the same as the flow path of the second source gas. As a result, the first source gas discharged from the first outlet can be uniformly mixed with the second source gas in the vicinity of the injector and then reach the substrate, and a thin film formed on the substrate surface The film quality and film thickness can be made uniform between the substrates and within the substrate surface.

  In the present embodiment, since the injector is partitioned and the first injector and the second injector are provided, the first injector and the second injector are provided integrally, but the first injector The discharge port and the second discharge port need only be close to each other, and the first injector and the second injector may be provided separately.

  The preferred embodiments of the present invention have been described above, but the present invention is not limited to such specific embodiments, and various modifications can be made within the scope of the gist of the present invention described in the claims. Can be modified or changed.

10, 10a, 10b, 10c Injector 11, 11a, 11c First injector 11b, 11d, 12b, 12d, 13c Portion 12, 12a, 12c Second injector 13, 13b Gas heater 14 Temperature sensor 15 Temperature controller 16 Electric power Supply unit 20 Film forming apparatus 21 Chamber (reaction vessel)
22 Wafer boat 25 Exhaust port 27 Heater 29 PMDA vaporizer 30 ODA vaporizer 31, 32 Valve FL1 First source gas channel FL2 Second source gas channel N Discharge port N1 First discharge port N2 Second Discharge port S Storage area W Wafer

Claims (6)

A film forming apparatus for reacting a first source gas and a second source gas in a reaction vessel to form a thin film on a substrate surface,
A first injector provided in the reaction vessel and discharging a first source gas into the reaction vessel;
A second injector provided in the reaction vessel and discharging a second source gas into the reaction vessel;
The first injector is provided with a plurality of first discharge ports for discharging the first source gas toward the substrate,
The second injector is provided with a plurality of second discharge ports for discharging the second source gas toward the substrate,
The flow path of the first source gas discharged from the first discharge port is substantially the same as the flow path of the second source gas discharged from the corresponding second discharge port;
The film forming apparatus, wherein the first source gas is mixed with the second source gas after being discharged from the first discharge port and before reaching the substrate.   The film forming apparatus according to claim 1, wherein the first injector is accommodated inside the second injector.   The film forming apparatus according to claim 2, wherein the first discharge port and the second discharge port corresponding to each other are provided on the same surface perpendicular to the longitudinal direction of the reaction container.   The film forming apparatus according to claim 2, further comprising a heater accommodated in the second injector.   The film forming apparatus according to claim 2, further comprising a heater disposed close to the outside of the second injector.   The film forming apparatus according to claim 4, wherein the heater heats the first source gas and the second source gas to a temperature higher than the temperatures of the plurality of substrates.

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