JP2010205581A - Manufacturing method of photoelectric conversion element using conductive mesh - Google Patents
Manufacturing method of photoelectric conversion element using conductive mesh Download PDFInfo
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- JP2010205581A JP2010205581A JP2009050252A JP2009050252A JP2010205581A JP 2010205581 A JP2010205581 A JP 2010205581A JP 2009050252 A JP2009050252 A JP 2009050252A JP 2009050252 A JP2009050252 A JP 2009050252A JP 2010205581 A JP2010205581 A JP 2010205581A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Abstract
【課題】電極の導電性を向上させることができる上に、両電極間の距離を短くでき、両電極間の抵抗が低く光電変換効率の高い光電変換素子の製造方法を提供する。
【解決手段】透明基板(6)上に透明導電部材とその上に光触媒膜(8)を有する電極(10)と、対極基板(1)上に少なくとも導電部材を有する対極(9)とが所定間隔で対向状に配置され、両電極間に電解質が配置されてなる光電変換素子の製造方法である。透明基板(6)の表面に透明導電部材として導電性メッシュ(2)を設け、その上にガラス状膜(4)を形成して導電性メッシュ(2)を埋め込み、ガラス状膜(4)の表面部を研削して導電性メッシュ(2)の上端部をガラス状膜(4)から露出させ、その上に上記光触媒膜(8)を設ける。
【選択図】 図4The present invention provides a method for manufacturing a photoelectric conversion element that can improve the conductivity of an electrode and that can shorten the distance between both electrodes, has a low resistance between both electrodes, and has high photoelectric conversion efficiency.
An electrode (10) having a transparent conductive member on a transparent substrate (6) and a photocatalytic film (8) thereon, and a counter electrode (9) having at least a conductive member on a counter substrate (1) are predetermined. This is a method for producing a photoelectric conversion element, which is arranged in an opposing manner at intervals and in which an electrolyte is arranged between both electrodes. A conductive mesh (2) is provided as a transparent conductive member on the surface of the transparent substrate (6), a glassy film (4) is formed thereon and the conductive mesh (2) is embedded, and the glassy film (4) The upper surface of the conductive mesh (2) is exposed from the glassy film (4) by grinding the surface portion, and the photocatalytic film (8) is provided thereon.
[Selection] Figure 4
Description
本発明は、透明基板上に透明導電膜とその上に光触媒膜を有する電極と、対極基板上に少なくとも導電部材を有する対極とが所定間隔で対向状に配置され、両電極間に電解質が配置されてなる光電変換素子であって、透明基板に導電性メッシュを設ける光電変換素子の製造方法に関する。 In the present invention, an electrode having a transparent conductive film and a photocatalyst film thereon on a transparent substrate and a counter electrode having at least a conductive member on the counter electrode substrate are arranged at a predetermined interval and an electrolyte is arranged between the electrodes. The present invention relates to a method for producing a photoelectric conversion element comprising a conductive mesh on a transparent substrate.
一般に、色素増感型太陽電池などの光電変換素子は、ガラス板などの透明基板上に透明導電膜を形成し、その上に酸化チタンのような金属酸化物からなる光触媒膜を形成し、同膜をルテニウム錯体などの光増感色素で吸着してなる電極と、対極用基板上に透明導電膜を形成してなる対極とを対向状に配置し、両電極間にヨウ素系電解質などからなる電解質層を介在させたものが知られている(特許文献1)。 In general, a photoelectric conversion element such as a dye-sensitized solar cell is formed by forming a transparent conductive film on a transparent substrate such as a glass plate and forming a photocatalytic film made of a metal oxide such as titanium oxide on the transparent conductive film. An electrode formed by adsorbing a film with a photosensitizing dye such as a ruthenium complex and a counter electrode formed by forming a transparent conductive film on a counter electrode substrate are arranged opposite to each other, and an iodine electrolyte or the like is formed between the electrodes. One having an electrolyte layer interposed is known (Patent Document 1).
上記光電変換素子において、電極の抵抗値は光電変換効率に大きな影響を及ぼすため、電極上に金属メッシュを設け、両電極間の抵抗を低くし、導電性を高めることが行われている(特許文献2)。 In the photoelectric conversion element, since the resistance value of the electrode has a great influence on the photoelectric conversion efficiency, a metal mesh is provided on the electrode to reduce the resistance between the two electrodes and increase the conductivity (patent) Reference 2).
上記のように光電変換素子の電極上に導電性メッシュを設けることで電極の導電性を高めることができる。しかし、このような構成を取ると導電性メッシュの厚みにより両電極間の距離が必然的に長くなり、両電極間の抵抗が高くなるため、電子が基板表面まで到達できなくなり、電子の授受効率が低下するという問題があった。 By providing a conductive mesh on the electrode of the photoelectric conversion element as described above, the conductivity of the electrode can be increased. However, with such a configuration, the distance between the two electrodes is inevitably increased due to the thickness of the conductive mesh, and the resistance between the two electrodes is increased, so that electrons cannot reach the substrate surface, and the electron transfer efficiency There was a problem that decreased.
この問題を解決するには、導電性メッシュの厚みを薄くすることが考えられるが、この場合は電極上の金属メッシュの厚みを一定にすることが困難であり、両電極間の接触を防ぐためやはり両電極間の距離を長くする必要があり、上記と同様の問題が避けられない。 In order to solve this problem, it is conceivable to reduce the thickness of the conductive mesh, but in this case, it is difficult to make the thickness of the metal mesh on the electrode constant, and this prevents contact between the two electrodes. Again, it is necessary to increase the distance between the two electrodes, and the same problem as above cannot be avoided.
そこで本発明では、電極の導電性を向上させることができる上に、両電極間の距離を短くでき、両電極間の抵抗が低く光電変換効率の高い光電変換素子の製造方法を提供する。 Therefore, the present invention provides a method for producing a photoelectric conversion element that can improve the conductivity of the electrodes and can shorten the distance between the two electrodes, and has low resistance between the two electrodes and high photoelectric conversion efficiency.
請求項1に係る発明は、透明基板上に透明導電部材とその上に光触媒膜を有する電極と、対極基板上に少なくとも導電部材を有する対極とが所定間隔で対向状に配置され、両電極間に電解質が配置されてなる光電変換素子の製造方法であって、
上記透明基板の表面に透明導電部材として導電性メッシュを設け、その上にガラス状膜を形成して導電性メッシュを埋め込み、ガラス状膜の表面部を研削して導電性メッシュの上端部をガラス状膜から露出させ、その上に上記光触媒膜を設けることを特徴とする光電変換素子の製造方法である。
In the invention according to
A conductive mesh is provided as a transparent conductive member on the surface of the transparent substrate, a glassy film is formed thereon, the conductive mesh is embedded, the surface of the glassy film is ground, and the upper end of the conductive mesh is glass. It is exposed from a film-like film, and the photocatalyst film is provided thereon.
請求項2に係る発明は、さらに、上記対極基板の表面に導電部材として導電性メッシュを設け、その上にガラス状膜を形成して導電性メッシュを埋め込み、ガラス状膜の表面部を研削して導電性メッシュの上端部をガラス状膜から露出させることを特徴とする請求項1記載の光電変換素子の製造方法である。
The invention according to
請求項3に係る発明は、上記導電性メッシュが、電解質中の酸化還元対の酸化体を還元体に還元する反応の触媒として機能する材料から構成されていることを特徴とする請求項2記載の光電変換素子の製造方法である。
The invention according to
請求項4に係る発明は、上記導電性メッシュの露出面に、電解質中の酸化還元対の酸化体を還元体に還元する反応の触媒として機能する材料からなる層が形成されていることを特徴とする請求項2記載の光電変換素子の製造方法である。
The invention according to claim 4 is characterized in that a layer made of a material functioning as a catalyst for the reaction of reducing the oxidized form of the redox couple in the electrolyte to a reduced form is formed on the exposed surface of the conductive mesh. It is a manufacturing method of the photoelectric conversion element of
請求項1に係る発明によれば、電極は十分な導電性を得ることができ、両極間の距離を小さくすることができるため、両電極間の抵抗を下げることができる。 According to the first aspect of the present invention, the electrode can obtain sufficient conductivity and the distance between the two electrodes can be reduced, so that the resistance between the two electrodes can be lowered.
請求項2に係る発明によれば、さらに対極も十分な導電性を得ることができ、両極間の距離を一層小さくすることができるため、両電極間の抵抗をさらに下げることができる。 According to the second aspect of the invention, the counter electrode can also have sufficient conductivity and the distance between the two electrodes can be further reduced, so that the resistance between the two electrodes can be further reduced.
請求項3または4に係る発明によれば、上記効果をさらに増大することができる。
According to the invention of
こうして光電変換効率の高い光電変換素子を製造することができる。 In this way, a photoelectric conversion element with high photoelectric conversion efficiency can be manufactured.
まず、請求項1に係る発明について、説明をする。この発明では、上記透明基板の表面に透明導電部材として導電性メッシュを設け、その上にガラス状膜を形成して導電性メッシュを埋め込み、ガラス状膜の表面部を研削して導電性メッシュの上端部をガラス状膜から露出させ、その上に上記光触媒膜を設ける。
First, the invention according to
透明基板としては、合成樹脂板、ガラス板などが適宜使用されるが、PEN(ポリエチレン・ナフタレート)フィルムなどの熱可塑性樹脂フィルムが好ましい。合成樹脂は、PENの他に、ポリエチレン・テレフタレート、ポリエステル、ポリカーボネート、ポリオレフィンなどであってもよい。 As the transparent substrate, a synthetic resin plate, a glass plate or the like is used as appropriate, but a thermoplastic resin film such as a PEN (polyethylene naphthalate) film is preferable. In addition to PEN, the synthetic resin may be polyethylene terephthalate, polyester, polycarbonate, polyolefin, or the like.
透明基板の厚さは好ましくは数十μm〜1mmである。 The thickness of the transparent substrate is preferably several tens of μm to 1 mm.
導電性メッシュの材料としては、鉄、ニッケル、クロム、チタン、アルミニウム、白金、銀、パラジウム、コバルト、銅、タンタル、ルテニウム、タングステン、亜鉛、錫などやこれらの合金などの金属が例示されるが、これらに限定されるものではなく、伝導性ポリマー繊維、金属被覆されたポリマー繊維や天然繊維など、導電性を持つものであれば使用することができる。 Examples of the conductive mesh material include metals such as iron, nickel, chromium, titanium, aluminum, platinum, silver, palladium, cobalt, copper, copper, tantalum, ruthenium, tungsten, zinc, tin, and alloys thereof. However, the present invention is not limited thereto, and any conductive polymer fiber, metal-coated polymer fiber, natural fiber, or the like having conductivity can be used.
透明基板の表面に導電性メッシュを設ける方法としては、公知のロールツーロール方式以外に、透明基板に合成樹脂板を用いる場合は、導電性メッシュを通電により加熱するか直接加熱しながら、透明基板に加熱した導電性メッシュを埋め込む方法が好ましい。 As a method of providing a conductive mesh on the surface of the transparent substrate, in addition to the known roll-to-roll method, when using a synthetic resin plate for the transparent substrate, the conductive mesh is heated by energization or directly heated while the transparent substrate is used. A method of embedding a heated conductive mesh is preferred.
また、透明基板上に導電性メッシュを配置し、その上から液状の透明性樹脂(例えばポリビニルアルコール)、液体の透明性ゴム(例えばスチレンブタジレンゴム)などを流し込むか、あるいは0.5〜1mm程度の厚みでスキージ法などによって塗り込んで、乾燥させ、表面を軽く研磨する方法が好ましい。透明基板に上記液体透明樹脂またはゴムの層をスキージ法などによって形成し、この層の上に導電性メッシュを重ねて埋め込んでもよい。 In addition, a conductive mesh is arranged on a transparent substrate, and a liquid transparent resin (for example, polyvinyl alcohol), liquid transparent rubber (for example, styrene butadiene rubber) or the like is poured on the conductive mesh, or about 0.5 to 1 mm. A method of applying the thickness by a squeegee method, drying, and lightly polishing the surface is preferable. The liquid transparent resin or rubber layer may be formed on a transparent substrate by a squeegee method or the like, and a conductive mesh may be embedded on the layer.
上記方法により、透明基板に導電性メッシュが埋め込まれるが、導電性メッシュは透明基板表面に導電性メッシュの厚みの1/3〜1/2程度を露出させるのが好ましい。 Although the conductive mesh is embedded in the transparent substrate by the above method, the conductive mesh preferably exposes about 1/3 to 1/2 of the thickness of the conductive mesh on the transparent substrate surface.
導電性メッシュを構成する線材(ワイヤ)の径(メッシュの厚み)は500μm以下、線材(ワイヤ)間の距離は100μm以下であり、短い方が好ましいが、開口率が80%以上になるようにすることが好ましい。 The diameter (mesh thickness) of the wire material (wire) constituting the conductive mesh is 500 μm or less, and the distance between the wire materials (wires) is 100 μm or less. The shorter one is preferable, but the aperture ratio is 80% or more. It is preferable to do.
導電性メッシュの開口領域の形状は、特に限定されないが、正方形、長方形、菱形、平行四辺形、台形、三角形、円形、楕円形、多角形、不定形などを、光線の透過性と導電性を考慮して適宜決定される。 The shape of the opening area of the conductive mesh is not particularly limited, but it can be square, rectangular, rhombus, parallelogram, trapezoid, triangle, circle, ellipse, polygon, irregular shape, etc. It is determined as appropriate in consideration.
好ましい導電性メッシュとしては、例えば厚み50μm以下のチタン製のエキスパンドメッシュが挙げられる。 A preferable conductive mesh is, for example, an expanded mesh made of titanium having a thickness of 50 μm or less.
透明基板の表面に導電性メッシュを設けた後その上に形成するガラス状膜は、導電性メッシュを保持すると共に光電変換素子外部からの水分などの侵入を防ぐ封止材として作用し、さらに、光線を散乱させることにより同素子内に光線を閉じ込め光電変換効率を向上させるのに寄与する。 The glassy film formed on the surface of the transparent substrate after providing the conductive mesh acts as a sealing material for holding the conductive mesh and preventing moisture and the like from entering from the outside of the photoelectric conversion element. By scattering the light beam, the light beam is confined in the element, which contributes to improving the photoelectric conversion efficiency.
ガラス状膜は、シリケート、アルミナシリケートなどを含む塗布液を、導電性メッシュを埋め込んだ透明基板の上面に塗布し、焼成することで得られる。ついで、例えば通常のラッピングやポリシングによる方法で、導電性メッシュおよびガラス状膜を形成された透明基板表面を研削して導電性メッシュの上端部を露出させ、平滑化する。ガラス状膜の厚さは、好ましくは1サブμm〜20μmである。 The glassy film can be obtained by applying a coating solution containing silicate, alumina silicate, or the like on the upper surface of a transparent substrate in which a conductive mesh is embedded and baking it. Next, the surface of the transparent substrate on which the conductive mesh and the glassy film are formed is ground by, for example, a normal lapping or polishing method to expose and smooth the upper end portion of the conductive mesh. The thickness of the glassy film is preferably 1 sub μm to 20 μm.
さらに電極では導電性向上と電解質による導電性メッシュの腐食を防止するために、メッシュ露出面およびガラス状膜表面に亘って透明導電膜を形成し、耐食性を向上させることが好ましい。 Further, in the electrode, in order to improve the conductivity and prevent the conductive mesh from being corroded by the electrolyte, it is preferable to improve the corrosion resistance by forming a transparent conductive film over the exposed mesh surface and the glassy film surface.
この膜形成方法はイオン化蒸着、CVD法などいろいろあり限定されないが、特にスパッタ法により行うことが好ましい。スパッタ法での金属ターゲットとしては、透明導電膜のスズ添加酸化インジウム(ITO)、フッ素添加酸化スズ(FTO)、酸化スズ(SnO2)、インジウム亜鉛酸化物(IZO)、酸化亜鉛(ZnO)の材料となる、In−Sn合金、Zn、In−Zn合金、Sn、Ga−Zn合金、Al−Zn合金などが好適に使用されるが、非酸化物金属で透明導電膜が形成できるものであれば特に限定はされない。透明導電膜の厚さは好ましくは数十〜数百nmである。 There are various methods for forming this film, such as ionized vapor deposition and CVD, and it is not particularly limited. As a metal target in the sputtering method, tin-doped indium oxide (ITO), fluorine-doped tin oxide (FTO), tin oxide (SnO 2 ), indium zinc oxide (IZO), and zinc oxide (ZnO) of a transparent conductive film are used. Materials such as In—Sn alloy, Zn, In—Zn alloy, Sn, Ga—Zn alloy, Al—Zn alloy, etc. are preferably used. There is no particular limitation. The thickness of the transparent conductive film is preferably several tens to several hundreds nm.
電極の導電性メッシュまたはその上の透明導電膜上に光触媒膜を形成する。これは、例えば、i)光触媒粒子(金属酸化物粒子)を含むペーストを導電性メッシュまたはその上の透明導電膜上に塗布し、乾燥し、場合によっては焼成する方法や、ii)金属酸化物ゾルを導電性メッシュまたはその上の透明導電膜上に静電塗布し、乾燥し、場合によっては焼成する方法によって行われる。 A photocatalytic film is formed on the conductive mesh of the electrode or the transparent conductive film thereon. For example, i) a method in which a paste containing photocatalyst particles (metal oxide particles) is applied on a conductive mesh or a transparent conductive film thereon, dried, and optionally fired, or ii) a metal oxide The sol is electrostatically applied onto a conductive mesh or a transparent conductive film thereon, dried, and optionally fired.
光触媒粒子は、酸化チタン(TiO2)、酸化スズ(SnO2)、酸化タングステン(WO3)、酸化亜鉛(ZnO)、酸化ニオブ(Nb2O5)などの金属酸化物からなる。さらに粒径数百nmの光触媒粒子を混ぜることが好ましい。 The photocatalytic particles are made of a metal oxide such as titanium oxide (TiO 2 ), tin oxide (SnO 2 ), tungsten oxide (WO 3 ), zinc oxide (ZnO), or niobium oxide (Nb 2 O 5 ). Furthermore, it is preferable to mix photocatalyst particles having a particle size of several hundred nm.
i)の方法において、光触媒含有ペーストは、純水、エタノール、プロパノール、t-ブタノール等に光触媒粒子を添加したものであってよい。 In the method i), the photocatalyst-containing paste may be one obtained by adding photocatalyst particles to pure water, ethanol, propanol, t-butanol or the like.
ii)の方法では、静電塗布装置をマイナス側とし被塗物である導電性メッシュまたはその上の透明導電膜をプラス側として、この間に高電圧を加えて静電界を形成し、静電塗布装置のスプレーノズルから噴霧された金属酸化物ゾルをマイナス側に帯電させて導電性メッシュまたはその上の透明導電膜表面に塗装する。この場合、静電塗布しながらレーザ照射し、上記乾燥、焼成を同時に行うようにしても良い。静電塗布装置は金属酸化物ゾルを導電性メッシュまたはその上の透明導電膜上に塗布できるものであれば良く、上記構成に限定されない。レーザとしては、好ましくは可視光域〜近赤外域(700nm〜1100nm)、具体的にはNd:YAGレーザ(1064nm)やNd:YVO4レーザ(1064nm)、またはTI:サファイアレーザ(650-1100nm)、Cr:LiSAFレーザ(780-1010nm)、アレキサンドライトレーザ(700-820nm)、CO2レーザのような波長可変レーザが適用可能である。 In the method ii), the electrostatic coating apparatus is set on the negative side, the conductive mesh as the object to be coated or the transparent conductive film thereon is set on the positive side, a high voltage is applied therebetween to form an electrostatic field, and electrostatic coating is performed. The metal oxide sol sprayed from the spray nozzle of the apparatus is charged to the negative side and applied to the conductive mesh or the surface of the transparent conductive film thereon. In this case, laser irradiation may be performed while electrostatic coating, and the drying and baking may be performed simultaneously. The electrostatic coating apparatus is not limited to the above configuration as long as it can apply the metal oxide sol onto the conductive mesh or the transparent conductive film thereon. The laser is preferably visible light region to near infrared region (700 nm to 1100 nm), specifically, Nd: YAG laser (1064 nm), Nd: YVO4 laser (1064 nm), or TI: sapphire laser (650-1100 nm), A tunable laser such as a Cr: LiSAF laser (780-1010 nm), an alexandrite laser (700-820 nm), or a CO 2 laser is applicable.
金属酸化物ゾルの出発原料となる金属化合物としては、金属有機化合物では、例えば金属アルコキシド、金属アセチルアセトネート、金属カルボキシレート、金属無機化合物では、例えば金属の硝酸塩、オキシ塩化物、塩化物などが挙げられる。 Examples of the metal compound used as a starting material for the metal oxide sol include metal alkoxides, metal acetylacetonates, metal carboxylates, and metal inorganic compounds such as metal nitrates, oxychlorides, and chlorides. Can be mentioned.
上記金属酸化物としては、酸化チタンが好ましく、その他酸化スズ、酸化タングステン、酸化亜鉛、酸化ニオブなどが挙げられる。 The metal oxide is preferably titanium oxide, and other examples include tin oxide, tungsten oxide, zinc oxide, and niobium oxide.
酸化チタンを用いた一例として、金属アルコキシドとしては、チタンテトラメトキシド、チタンエトキシド、チタンイソプロポキシド、チタンブタキシドなど、金属アセチルアセトネートとしては、チタンアセチルアセトネートなど、金属カルボキシレートとしては、チタンカルボキシレートなど、硝酸チタン、オキシ塩化チタン、四塩化チタンなどが挙げられる。 As an example of using titanium oxide, as metal alkoxide, titanium tetramethoxide, titanium ethoxide, titanium isopropoxide, titanium butoxide, etc., as metal acetylacetonate, as titanium acetylacetonate, as metal carboxylate , Titanium carboxylate, titanium nitrate, titanium oxychloride, titanium tetrachloride and the like.
さらに、上記金属化合物に、水、メタノール、エタノール、1−プロパノール、イソプロピルアルコール、1−ブタノール、2−ブタノール、イソブタノール、t−ブタノール、1−ペンタノール、2−ペンタノール、3−ペンタノールなどの溶媒、酸またはアンモニア、その他添加物などを加えることでゾル化、ゲル化を行う。 Furthermore, the above metal compounds include water, methanol, ethanol, 1-propanol, isopropyl alcohol, 1-butanol, 2-butanol, isobutanol, t-butanol, 1-pentanol, 2-pentanol, 3-pentanol and the like. By adding a solvent, acid or ammonia, and other additives, sol-formation and gelation are performed.
i)およびii)の方法において、乾燥は、室温で、5〜30分程度行われる。焼成は、温度450〜550℃で、30〜60分程度行われる。 In the methods i) and ii), the drying is performed at room temperature for about 5 to 30 minutes. Firing is performed at a temperature of 450 to 550 ° C. for about 30 to 60 minutes.
光触媒膜の厚みは、好ましくは5〜20μmである。 The thickness of the photocatalyst film is preferably 5 to 20 μm.
次に、同光触媒膜に透明基板側から同電極を経てレーザを照射することが好ましい。このレーザは上記のものと同じであってよい。 Next, it is preferable to irradiate the photocatalyst film with a laser from the transparent substrate side through the same electrode. This laser may be the same as described above.
その後、光触媒膜に光増感色素を吸着させる。光増感色素の吸着は、例えば、光触媒膜を有する電極を、光増感色素を含む浸漬液に浸して光触媒膜の表面に同色素を吸着させることにより行われる。浸漬後、乾燥さらには焼成を行うことが好ましい。光増感色素は、例えばビピリジン構造、ターピリジン構造などを含む配位子を有するルテニウム錯体や鉄錯体、ポルフィリン系やフタロシアニン系の金属錯体、さらにはエオシン、ローダミン、メロシアニン、クマリンなどの有機色素などであってよい。 Thereafter, the photosensitizing dye is adsorbed on the photocatalyst film. The photosensitizing dye is adsorbed by, for example, immersing an electrode having a photocatalytic film in an immersion liquid containing the photosensitizing dye and adsorbing the dye on the surface of the photocatalytic film. After immersion, it is preferable to perform drying and further firing. Photosensitizing dyes include, for example, ruthenium complexes and iron complexes having a ligand containing a bipyridine structure, a terpyridine structure, etc., porphyrin-based and phthalocyanine-based metal complexes, and organic dyes such as eosin, rhodamine, merocyanine, and coumarin. It may be.
つぎに、請求項2に係る発明について、説明をする。この発明では、さらに、上記対極基板の表面に導電部材として導電性メッシュを設け、その上にガラス状膜を形成して導電性メッシュを埋め込み、ガラス状膜の表面部を研削して導電性メッシュの上端部をガラス状膜から露出させる。
Next, the invention according to
対極基板の材料は透明基板のものと同じものであってもよい。対極基板の厚さは好ましくは数十μm〜1mmである。 The material of the counter electrode substrate may be the same as that of the transparent substrate. The thickness of the counter electrode substrate is preferably several tens of μm to 1 mm.
対極基板の表面に導電性メッシュを設ける方法、その上にガラス状膜を形成して導電性メッシュを埋め込む方法、および、ガラス状膜の表面部を研削して導電性メッシュの上端部をガラス状膜から露出させる方法は、請求項1の発明で説明した方法と同じであってよい。
A method of providing a conductive mesh on the surface of the counter electrode substrate, a method of embedding a conductive mesh by forming a glassy film on the surface, and a glass-like upper surface of the conductive mesh by grinding the surface of the glassy film. The method of exposing from the film may be the same as the method described in the invention of
ここで形成するガラス状膜は、上記電極における作用に加えて、ヨウ素などの電解質による対極基板および導電性メッシュの腐食を防ぐ作用も奏する。 The glassy film formed here has an effect of preventing corrosion of the counter electrode substrate and the conductive mesh due to an electrolyte such as iodine, in addition to the effect of the electrode.
対極に設けられる導電性メッシュの材料としては、上記材料以外に、電解質中の酸化還元対の酸化体を還元体に還元する反応の触媒として機能する材料が好ましく、このような材料としては、例えば、チタン、ポリエチレンジオキシチオフェン(PEDOT)、白金、チタンとカーボンの混合物に塩化白金酸または白金を担持したものが挙げられる。 As the material for the conductive mesh provided on the counter electrode, in addition to the above materials, a material that functions as a catalyst for the reaction of reducing the oxidized form of the redox couple in the electrolyte to a reduced form is preferable. , Titanium, polyethylenedioxythiophene (PEDOT), platinum, and a mixture of titanium and carbon carrying chloroplatinic acid or platinum.
また、導電性メッシュの露出面には、必要に応じて、上記電解質中の酸化還元対の酸化体を還元体に還元する還元反応の触媒としての機能する材料の塗布液を塗布し、さらに焼成する。このような材料としては、例えば、チタン、ポリエチレンジオキシチオフェン(PEDOT)、白金、チタンとカーボンの混合物に塩化白金酸または白金を担持したものなどが挙げられる。塗布後の焼成は、特に限定されないが、レーザによる方法が好ましい。このレーザは上記のものと同じであってよい。これにより、導電性メッシュの露出面における上記還元反応が促進され(触媒能向上)と耐食性の向上につながる。 Further, on the exposed surface of the conductive mesh, if necessary, a coating solution of a material that functions as a catalyst for a reduction reaction that reduces the oxidized form of the redox couple in the electrolyte to a reduced form is applied, and further fired. To do. Examples of such a material include titanium, polyethylene dioxythiophene (PEDOT), platinum, and a mixture of titanium and carbon carrying chloroplatinic acid or platinum. Although baking after application | coating is not specifically limited, The method by a laser is preferable. This laser may be the same as described above. Thereby, the said reduction reaction in the exposed surface of an electroconductive mesh is accelerated | stimulated (catalyst capability improvement), and it leads to the improvement of corrosion resistance.
なお、電極側において主に光線を素子内に取り入れ、対極側では光線を素子内に取り入れる必要がない場合は、対極基板は透明である必要はなく、対極の導電性メッシュは開口領域(透過率)の小さいもの、または開口を有しない導電板を対極側に用いることにより、導電性を向上させるようにしても良い。また、導電性メッシュの開口領域に、例えばポリエチレンジオキシチオフェン(PEDOT)/ポリシラスチレン(PSS)などの導電性高分子とエタノールを好適な割合(たとえば1:1)で混合した塗布液をスピンコートなどの方法で塗布し、乾燥させ、必要に応じて焼成することにより、導電性を向上させる層を形成しても良い。 If it is not necessary to introduce light mainly into the device on the electrode side and light into the device on the counter electrode side, the counter electrode substrate does not need to be transparent, and the conductive mesh of the counter electrode has an open area (transmittance). ) Or a conductive plate having no opening may be used on the counter electrode side to improve conductivity. In addition, a coating liquid in which a conductive polymer such as polyethylenedioxythiophene (PEDOT) / polysilastyrene (PSS) and ethanol are mixed in a suitable ratio (for example, 1: 1) is spinned in the opening area of the conductive mesh. A layer for improving conductivity may be formed by applying by a method such as coating, drying, and baking as necessary.
光電変換素子は、透明基板上に透明導電部材とその上に光触媒膜を有する電極と、対極基板上に少なくとも導電部材を有する対極とが所定間隔で対向状に配置され、両電極間に電解質が配置されることにより、主として構成されている。 In the photoelectric conversion element, a transparent conductive member on a transparent substrate, an electrode having a photocatalyst film thereon, and a counter electrode having at least a conductive member on a counter electrode substrate are arranged in an opposing manner at a predetermined interval, and an electrolyte is interposed between both electrodes. It is mainly configured by being arranged.
電解質としては、例えば、ヨウ素系電解液が使用され、具体的には、ヨウ素、ヨウ化物イオン、ターシャリーブチルピリジンなどの電解質成分が、エチレンカーボネートやメトキシアセトニトリルなどの有機溶媒に溶解されてなるものが例示される。電解質は、電解液からなるものに限定されず、固体電解質であってもよい。固体電解質としては、例えば、DMPImI(ジメチルプロピルイミダゾリウムヨウ化物)が例示され、このほか、LiI、NaI、KI、CsI、CaI2などの金属ヨウ化物、およびテトラアルキルアンモニウムヨーダイドなど4級アンモニウム化合物のヨウ素塩などのヨウ化物とI2とを組み合わせたもの;LiBr、NaBr、KBr、CsBr、CaBr2などの金属臭化物、およびテトラアルキルアンモニウムブロマイドなど4級アンモニウム化合物の臭素塩などの臭化物とBr2とを組み合わせたものなどを適宜使用することができる。 As the electrolyte, for example, an iodine-based electrolyte is used. Specifically, an electrolyte component such as iodine, iodide ion, or tertiary butyl pyridine is dissolved in an organic solvent such as ethylene carbonate or methoxyacetonitrile. Is exemplified. The electrolyte is not limited to an electrolyte and may be a solid electrolyte. The solid electrolyte, for example, is illustrated DMPImI (dimethylpropyl imidazolium iodide) is, in addition, LiI, NaI, KI, CsI, metal iodide such as CaI 2, and tetraalkylammonium iodide and quaternary ammonium compounds A combination of iodides such as the iodine salts of I 2 and I 2 ; bromides such as bromides of metal bromides such as LiBr, NaBr, KBr, CsBr, CaBr 2 and quaternary ammonium compounds such as tetraalkylammonium bromide and Br 2. And the like can be used as appropriate.
光電変換素子は、例えば、方形の電極用透明基板と方形の対極基板との間に、電極用透明導電部材、対極用導電部材、集電電極、電解質層および光触媒膜が所定間隔で配置されることにより形成され、この際の電極と対極との接続は、直列とされることがあり、並列とされることもある。いずれの場合でも、電解質層および光触媒膜はシール材によって隣り合うもの同士の間が仕切られる。直列接続の場合、電極用透明導電部材、対極用導電部材および集電電極は、隣り合うもの同士の間に間隙が形成され、隣り合う電極用透明導電部材と対極用導電部材とが導体によって接続される。並列接続の場合、電極用透明導電部材、対極用導電部材および集電電極は、隣り合うもの同士の間に隙間がない形状とされる。 In the photoelectric conversion element, for example, a transparent conductive member for electrodes, a conductive member for counter electrodes, a collecting electrode, an electrolyte layer, and a photocatalyst film are arranged at predetermined intervals between a transparent electrode substrate and a rectangular counter electrode substrate. In this case, the connection between the electrode and the counter electrode may be in series or in parallel. In either case, the electrolyte layer and the photocatalyst film are separated from each other by the sealing material. In the case of series connection, a transparent conductive member for electrodes, a conductive member for counter electrode, and a collecting electrode are formed with a gap between adjacent ones, and the transparent conductive member for electrode and the conductive member for counter electrode are connected by a conductor. Is done. In the case of parallel connection, the electrode transparent conductive member, the counter electrode conductive member, and the current collecting electrode have a shape with no gap between adjacent ones.
透明基板が導電性メッシュを埋め込んだものでない場合は、透明基板上に透明導電膜が形成されたもの(ITOガラス、FTOガラスなど)や金属板あるいは金属箔(アルミニウム、銅、スズ、チタンなど)などを用いることができる。 If the transparent substrate is not embedded with conductive mesh, a transparent conductive film is formed on the transparent substrate (ITO glass, FTO glass, etc.), metal plate or metal foil (aluminum, copper, tin, titanium, etc.) Etc. can be used.
また、対極基板が導電性メッシュを埋め込んだものでない場合は、対極は、対極基板に透明導電膜が形成したもの、あるいはアルミニウム、銅、スズなどの金属シート表面に、白金、PEDOTなどの導電膜を形成したものであってもよい。 In addition, when the counter electrode substrate is not embedded with a conductive mesh, the counter electrode is formed by forming a transparent conductive film on the counter electrode substrate, or a conductive film such as platinum or PEDOT on the surface of a metal sheet such as aluminum, copper or tin. May be formed.
光電変換素子を組み立てるには、例えば、電極と対極とが数μm〜数十μmの間隔で対向状に位置合わせされて、両極間が熱融着フィルムや封止材などで密封され、対極または電極などに予め設けておいた孔や隙間から電解質が注入される。また、固体電解質を用いる場合は、両極間に光触媒膜および電解質層が挟まれるように重ね合わせられて、その周縁部同士が加熱接着されるようにしてもよい。加熱は、金型によってもよく、プラズマ(波長の長いもの)、マイクロ波、可視光(600nm以上)や赤外線などのエネルギービームを照射することによってもよい。 In order to assemble the photoelectric conversion element, for example, the electrode and the counter electrode are aligned to face each other at an interval of several μm to several tens of μm, and the both electrodes are sealed with a heat-sealing film or a sealing material, and the counter electrode or The electrolyte is injected from holes or gaps provided in advance in the electrodes. When a solid electrolyte is used, the photocatalyst film and the electrolyte layer may be stacked so as to be sandwiched between the two electrodes, and the peripheral portions thereof may be heat bonded. Heating may be performed by a mold, or may be performed by irradiation with an energy beam such as plasma (having a long wavelength), microwave, visible light (600 nm or more), or infrared light.
つぎに、本発明を具体的に説明するために、本発明の実施例を挙げる。 Next, in order to describe the present invention specifically, examples of the present invention will be given.
実施例1(電極および対極の製造)
図1において、透明2軸延伸PETからなる電極用の対極基板(1)の上面に、図2に示す開口直径100μmで厚さ30μmのチタン製エキスパンドメッシュ(2)を、通電により加熱した後、同基板表面から10μm突出するように、埋め込んだ。
Example 1 (Production of electrode and counter electrode)
In FIG. 1, a titanium expanded mesh (2) having an opening diameter of 100 μm and a thickness of 30 μm shown in FIG. 2 is heated on the upper surface of a counter electrode substrate (1) made of transparent biaxially stretched PET by energization. It was embedded so as to protrude 10 μm from the surface of the substrate.
メッシュ(2)を埋め込んだ対極基板(1)の表面に、シリケートを含む塗布液をスプレーし乾燥させて厚さ15μmのガラス状膜(4)を形成した。 On the surface of the counter electrode substrate (1) embedded with the mesh (2), a coating liquid containing silicate was sprayed and dried to form a glassy film (4) having a thickness of 15 μm.
ついで、メッシュ(2)およびガラス状膜(4)を有する対極基板(1)の表面を、ラッピングによりで研削してメッシュ(2)の上端部をガラス状膜(4)から露出させ、対極基板(1)の表面を平滑化させた。 Next, the surface of the counter electrode substrate (1) having the mesh (2) and the glassy film (4) is ground by lapping so that the upper end of the mesh (2) is exposed from the glassy film (4). The surface of (1) was smoothed.
メッシュ露出面を有する対極基板(1)の上に、塩化白金酸0.1%を含む1−プロパノール溶液を塗布し乾燥させた後、レーザで焼成して、メッシュ露出面上に厚さ5nmの触媒層(5)を形成した。こうして、対極(9)を構成した。 A 1-propanol solution containing 0.1% of chloroplatinic acid is applied on the counter electrode substrate (1) having the mesh exposed surface, dried, and then fired with a laser to have a thickness of 5 nm on the mesh exposed surface. A catalyst layer (5) was formed. Thus, the counter electrode (9) was constructed.
他方、図3において、上記と同様の操作によって、透明2軸延伸PETからなる電極用の透明基板(6)の上面に、チタン製エキスパンドメッシュ(2)を埋め込んだ後、その表面にガラス状膜(4)を形成した。 On the other hand, in FIG. 3, after the titanium expanded mesh (2) is embedded in the upper surface of the transparent substrate (6) for electrodes made of transparent biaxially stretched PET by the same operation as described above, a glassy film is formed on the surface. (4) was formed.
ついで、上記と同様の操作によって、メッシュ(2)およびガラス状膜(4)を有する透明基板(6)の表面を研削してメッシュ(2)の上端部をガラス状膜(4)から露出させた。 Then, by the same operation as described above, the surface of the transparent substrate (6) having the mesh (2) and the glassy film (4) is ground to expose the upper end of the mesh (2) from the glassy film (4). It was.
こうして得られたメッシュ露出面およびガラス状膜(4)の 表面に亘って、スズ添加酸化インジウム(ITO)からなる厚さ150nmの透明導電膜(7)を形成し、さらにその上に、光触媒粒子として酸化チタン粒子を含むペースト(エタノールと水に酸化チタンを添加したもの)を塗布し、室温で、15分間乾燥し、温度150℃で、15分間焼成し、透明導電膜(7)の上に厚さ10μmの光触媒膜(8)を形成した。 A transparent conductive film (7) having a thickness of 150 nm made of tin-added indium oxide (ITO) is formed over the mesh exposed surface thus obtained and the surface of the glassy film (4), and further, photocatalyst particles are further formed thereon. Apply a paste containing titanium oxide particles (ethanol and water added with titanium oxide), dry at room temperature for 15 minutes, baked at 150 ° C for 15 minutes, on the transparent conductive film (7) A photocatalytic film (8) having a thickness of 10 μm was formed.
透明基板(6)とメッシュ(2)とガラス状膜(4) と透明導電膜(7)と光触媒膜(8)からなる電極(10)を、光増感色素を含む浸漬液(ルテニウム錯体(N719、分子量1187.7g./mol)をt-ブタノール:アセトニトリル(容量比1:1)に溶解させたもので、色素濃度:0.3mM)に温度40℃で40分間浸して光触媒膜(8)の表面に同色素を吸着させた。 An electrode (10) composed of a transparent substrate (6), a mesh (2), a glassy film (4), a transparent conductive film (7), and a photocatalytic film (8) is immersed in an immersion liquid (ruthenium complex ( N719, molecular weight 1187.7 g./mol) is dissolved in t-butanol: acetonitrile (volume ratio 1: 1), and the photocatalyst film (8) is immersed in a dye concentration: 0.3 mM for 40 minutes at a temperature of 40 ° C. The same dye was adsorbed on the surface.
対極(9)と電極(10)の透過率は、85%、5Ω/□であった。 The transmittances of the counter electrode (9) and the electrode (10) were 85% and 5Ω / □.
対極(9)と電極(10)を、図3に示すように、各メッシュ(2)を内側にして15μmの間隔で向き合うように配置した。 As shown in FIG. 3, the counter electrode (9) and the electrode (10) were arranged so as to face each other at an interval of 15 μm with each mesh (2) inside.
実施例2(光電変換素子の製造)
図4に光電変換素子の例を示す。光電変換素子は電極(10)と、同電極(10)に向き合うように配置され対極(9)と、両電極間に配置されたヨウ素からなる電解質(11)とから主として構成されている。電極(10)および対極(9)の構成は、実施例1において図1〜3に基づいて説明したとおりである。
Example 2 (Manufacture of photoelectric conversion elements)
FIG. 4 shows an example of a photoelectric conversion element. The photoelectric conversion element is mainly composed of an electrode (10), a counter electrode (9) disposed so as to face the electrode (10), and an electrolyte (11) made of iodine disposed between both electrodes. The configurations of the electrode (10) and the counter electrode (9) are as described in the first embodiment with reference to FIGS.
図4において、(1)は対極基板、(2)はチタン製エキスパンドメッシュ、(4)はガラス状膜、(5)は導電性向上層、(6)は透明基板、(7)は透明導電膜、(8)は光触媒膜、(9)は対極、(10)は電極、(11) は電解質、 (12)は両極間に亘って設けられた複数のシール材兼セパレータで、これらによって両極間に複数の区画が形成されている。(13)は両極に渡された複数の極間電極、(14)は極間電極保護用シール材である。 In FIG. 4, (1) is a counter electrode substrate, (2) is a titanium expanded mesh, (4) is a glassy film, (5) is a conductivity improving layer, (6) is a transparent substrate, and (7) is a transparent conductive material. (8) is a photocatalyst film, (9) is a counter electrode, (10) is an electrode, (11) is an electrolyte, and (12) is a plurality of sealing materials / separators provided between both electrodes. A plurality of sections are formed between them. (13) is a plurality of electrode between electrodes passed to both electrodes, and (14) is a sealing material for electrode protection.
上記構成にて100mm角の色素増感太陽電池を作製し、AM1.5、100mW/cm2の標準光源照射により電力変換効率を計測したところ、変換効率η=6%と、高効率が得られた。
When a 100 mm square dye-sensitized solar cell having the above-described configuration was prepared and the power conversion efficiency was measured by irradiation with a standard light source of AM 1.5 and 100 mW / cm 2 , a high efficiency of conversion efficiency η = 6% was obtained. It was.
(1) は対極基板
(2) はチタン製エキスパンドメッシュ
(3) はガラス状膜
(5)は導電性向上層
(6)は透明基板
(7)は透明導電膜
(8)は光触媒膜
(9)は対極
(10)は電極
(11) は電解質
(12)はシール材兼セパレータ
(13)は極間電極
(14)は極間電極保護用シール材
(1) is the counter electrode substrate
(2) is titanium expanded mesh
(3) is a glassy membrane
(5) is the conductivity enhancement layer
(6) is transparent substrate
(7) is transparent conductive film
(8) is a photocatalytic film
(9) is the counter electrode
(10) is an electrode
(11) is the electrolyte
(12) is a sealant and separator
(13) is the electrode between electrodes
(14) is a seal material for electrode protection
Claims (4)
上記透明基板の表面に透明導電部材として導電性メッシュを設け、その上にガラス状膜を形成して導電性メッシュを埋め込み、ガラス状膜の表面部を研削して導電性メッシュの上端部をガラス状膜から露出させ、その上に上記光触媒膜を設けることを特徴とする光電変換素子の製造方法。 A photoelectric device comprising a transparent conductive member on a transparent substrate, an electrode having a photocatalyst film thereon, and a counter electrode having at least a conductive member on a counter electrode substrate arranged at a predetermined interval and facing each other, and an electrolyte disposed between the electrodes. A method for manufacturing a conversion element, comprising:
A conductive mesh is provided as a transparent conductive member on the surface of the transparent substrate, a glassy film is formed thereon, the conductive mesh is embedded, the surface of the glassy film is ground, and the upper end of the conductive mesh is glass. A method for producing a photoelectric conversion element, wherein the photocatalyst film is provided on the exposed film.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014091809A1 (en) * | 2012-12-14 | 2014-06-19 | 積水化学工業株式会社 | Electrode substrate and dye-sensitized solar cell |
| JP2014530480A (en) * | 2011-09-08 | 2014-11-17 | ダイパワー | Method for producing catalyst layer of counter electrode of dye-sensitized solar cell |
| CN111403490A (en) * | 2018-12-28 | 2020-07-10 | 泰州隆基乐叶光伏科技有限公司 | Preparation method of solar cell interconnection structure |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005078857A (en) * | 2003-08-28 | 2005-03-24 | Fujikura Ltd | Electrode substrate, photoelectric conversion element, and dye-sensitized solar cell |
| JP2005259478A (en) * | 2004-03-11 | 2005-09-22 | Hitachi Ltd | Conductive glass and photoelectric conversion device using the same |
| JP2005317225A (en) * | 2004-04-27 | 2005-11-10 | Enplas Corp | Dye-sensitized solar cell, and photoelectrode for the same |
| JP2006210780A (en) * | 2005-01-31 | 2006-08-10 | Kyocera Chemical Corp | Multilayered photoelectric transfer device |
| JP2006269135A (en) * | 2005-03-22 | 2006-10-05 | Tobi Co Ltd | Glass cloth transparent conductive film partially replaced with metal wire |
| JP2006302618A (en) * | 2005-04-19 | 2006-11-02 | Ngk Spark Plug Co Ltd | Dye-sensitized solar cell |
| JP2009200012A (en) * | 2008-02-25 | 2009-09-03 | Shimane Pref Gov | Dye-sensitized solar battery, its manufacturing method, and method for insulating and protecting metal wire on conductive substrate |
-
2009
- 2009-03-04 JP JP2009050252A patent/JP2010205581A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005078857A (en) * | 2003-08-28 | 2005-03-24 | Fujikura Ltd | Electrode substrate, photoelectric conversion element, and dye-sensitized solar cell |
| JP2005259478A (en) * | 2004-03-11 | 2005-09-22 | Hitachi Ltd | Conductive glass and photoelectric conversion device using the same |
| JP2005317225A (en) * | 2004-04-27 | 2005-11-10 | Enplas Corp | Dye-sensitized solar cell, and photoelectrode for the same |
| JP2006210780A (en) * | 2005-01-31 | 2006-08-10 | Kyocera Chemical Corp | Multilayered photoelectric transfer device |
| JP2006269135A (en) * | 2005-03-22 | 2006-10-05 | Tobi Co Ltd | Glass cloth transparent conductive film partially replaced with metal wire |
| JP2006302618A (en) * | 2005-04-19 | 2006-11-02 | Ngk Spark Plug Co Ltd | Dye-sensitized solar cell |
| JP2009200012A (en) * | 2008-02-25 | 2009-09-03 | Shimane Pref Gov | Dye-sensitized solar battery, its manufacturing method, and method for insulating and protecting metal wire on conductive substrate |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014530480A (en) * | 2011-09-08 | 2014-11-17 | ダイパワー | Method for producing catalyst layer of counter electrode of dye-sensitized solar cell |
| WO2014091809A1 (en) * | 2012-12-14 | 2014-06-19 | 積水化学工業株式会社 | Electrode substrate and dye-sensitized solar cell |
| CN111403490A (en) * | 2018-12-28 | 2020-07-10 | 泰州隆基乐叶光伏科技有限公司 | Preparation method of solar cell interconnection structure |
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