JP2010278396A - Direct modulation semiconductor laser - Google Patents
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Abstract
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本発明は、光送信機を構成する直接変調型半導体レーザに関する。 The present invention relates to a direct modulation semiconductor laser constituting an optical transmitter.
高速・広帯域でかつ小型の光伝送システムを実現するため、直接変調を行う半導体レーザ（直接変調型半導体レーザ）を複数個並列に並べ、波長多重方式で伝送する方式の開発が進んでいる。この例として、現在規格策定が進む２５Ｇｂ／ｓ×４波長のＬＡＮＷＤＭ（Local Area Network Wavelength Division Multiplexing）伝送技術が、従来技術として知られている。 In order to realize a high-speed, wide-band, and small-sized optical transmission system, development of a system in which a plurality of semiconductor lasers that perform direct modulation (direct modulation type semiconductor lasers) are arranged in parallel and transmitted by a wavelength division multiplexing method is in progress. As an example of this, a 25 Gb / s × 4 wavelength LAN WDM (Local Area Network Wavelength Division Multiplexing) transmission technique for which standards are currently being developed is known as a conventional technique.
図３は、従来の直接変調型半導体レーザを示す概略構成図である。
図３を参照して、従来の直接変調型半導体レーザを説明すると、ｎ型ＩｎＰ基板１０００上のｎ型のＩｎＰクラッド１００１上に、回折格子１００２を形成し、順次、ＩｎＧａＡｓＰガイド層１００３、ＩｎＧａＡｓＰ活性層１００４、ｐ型のＩｎＰクラッド１００５、キャップ層１００６を設け、更に、ｎ型ＩｎＰ基板１０００の裏面側にｎ側電極１００７を、キャップ層１００６上にｐ側電極１００８を設けている。
FIG. 3 is a schematic configuration diagram showing a conventional direct modulation semiconductor laser.
A conventional direct modulation semiconductor laser will be described with reference to FIG. 3. A diffraction grating 1002 is formed on an n-type InP clad 1001 on an n-type InP substrate 1000, and an InGaAsP guide layer 1003, an InGaAsP active layer are sequentially formed. A layer 1004, a p-type InP clad 1005, and a cap layer 1006 are provided, and an n-side electrode 1007 is provided on the back side of the n-type InP substrate 1000, and a p-side electrode 1008 is provided on the cap layer 1006.
ｎ側電極１００７をアース１０１２に接地し、ｐ側電極１００８をバイアスＴ１００９に接続し、バイアスＴ１００９を通して、ＣＷ電流１０１０、信号電流１０１１を注入することで、レーザ発振光１０１３が信号電流１０１１によって変調されて、光の送信信号となる。ここで、例えば、ＣＷ電流１０１０は７５ｍＡ、信号電流１０１１の振幅は５０ｍＡ、レーザ発振光１０１３の平均光出力強度は５ｄＢｍ、その発振波長は１３１０ｎｍ、伝送速度は２５Ｇｂ／ｓ、光送信信号の消光比は４ｄＢである。そして、信号電流１０１１として、ビットパターン［１０１１０］の電気信号を印加すると、レーザ発振光１０１３として、ビットパターン［１０１１０］の信号光が送信されることになる。 The n-side electrode 1007 is grounded to the ground 1012, the p-side electrode 1008 is connected to the bias T 1009, and the CW current 1010 and the signal current 1011 are injected through the bias T 1009, whereby the laser oscillation light 1013 is modulated by the signal current 1011. Thus, it becomes an optical transmission signal. Here, for example, the CW current 1010 is 75 mA, the amplitude of the signal current 1011 is 50 mA, the average optical output intensity of the laser oscillation light 1013 is 5 dBm, the oscillation wavelength is 1310 nm, the transmission speed is 25 Gb / s, and the extinction ratio of the optical transmission signal Is 4 dB. When an electric signal having a bit pattern [10110] is applied as the signal current 1011, the signal light having the bit pattern [10110] is transmitted as the laser oscillation light 1013.
しかしながら、上記の直接変調型半導体レーザは、きれいなアイ開口が得られない問題があった。図４（ａ）、（ｂ）に直接変調型半導体レーザの変調波形を示す。図４（ａ）は１０Ｇｂ／ｓ、図４（ｂ）は２５Ｇｂ／ｓの波形例である。ここでは、アイパターンのｏｎレベルが大きく変形していることがわかる。 However, the direct modulation semiconductor laser has a problem that a clean eye opening cannot be obtained. 4A and 4B show modulation waveforms of the direct modulation type semiconductor laser. FIG. 4A shows a waveform example of 10 Gb / s, and FIG. 4B shows a waveform example of 25 Gb / s. Here, it can be seen that the on level of the eye pattern is greatly deformed.
この理由としては２点あり、一つは緩和振動よる半導体レーザの出力光強度の振動であり、一旦は光強度がオーバーシュートした半導体レーザが、キャリアの不足から出力光強度を減少させるためである。 There are two reasons for this, one is the oscillation of the output light intensity of the semiconductor laser due to relaxation oscillation, and the semiconductor laser that has once overshooted the light intensity reduces the output light intensity due to the lack of carriers. .
もう一つは図５に示すように、電気信号波形自体が一度立ちあがってから出力が減少する傾向を持つためであり、この結果としてキャリアが不足するために、信号光のｏｎレベルが波うつようになる。 The other is that, as shown in FIG. 5, the electric signal waveform itself has a tendency that the output decreases after it once rises. As a result, the carrier is insufficient, so that the on level of the signal light undulates. become.
なお、図４（ｂ）では、入力される電気信号波形のアンダーシュートにより、ｏｆｆレベルも振動しているが、一般にｏｆｆレベルの振動の方がｏｎレベルの振動よりも影響が少ないため、無視することができる。 In FIG. 4B, the off level also vibrates due to the undershoot of the input electric signal waveform, but in general, the off level vibration has less influence than the on level vibration, and is ignored. be able to.
以上説明したように、従来の直接変調型半導体レーザでは、キャリア不足からきれいなアイ開口が得られない問題があった。 As described above, the conventional direct modulation semiconductor laser has a problem that a clean eye opening cannot be obtained due to the lack of carriers.
本発明は上記課題に鑑みなされたもので、良好なアイ開口を得ることができる直接変調型半導体レーザを提供することを目的とする。 The present invention has been made in view of the above problems, and an object thereof is to provide a direct modulation semiconductor laser capable of obtaining a good eye opening.
上記課題を解決する第１の発明に係る直接変調型半導体レーザは、
伝送速度Ｘ１の信号光を出力する直接変調型半導体レーザにおいて、
ｐ側電極及びｎ側電極を共に接地しないように形成し、
前記ｐ側電極、前記ｎ側電極の一方の電極に伝送速度Ｘ１の電気ＮＲＺ信号を印加し、他方の電極に前記伝送速度Ｘ１の１ビット分の時間幅を１周期とする周波数Ｘ２の電気正弦波信号を印加すると共に、
前記電気ＮＲＺ信号の各ビットの時間幅の中心に、若しくは、前記電気ＮＲＺ信号の各ビットの時間幅の内側に、前記電気正弦波信号の極小点が来るようにしたことを特徴とする。
A direct modulation semiconductor laser according to a first invention for solving the above-described problems is as follows.
In a direct modulation semiconductor laser that outputs signal light having a transmission speed X1,
forming both the p-side electrode and the n-side electrode so as not to be grounded,
An electric sine of frequency X2 in which an electric NRZ signal having a transmission speed X1 is applied to one of the p-side electrode and the n-side electrode, and a time width corresponding to one bit of the transmission speed X1 is set to one cycle. While applying a wave signal,
The minimum point of the electric sine wave signal is located at the center of the time width of each bit of the electrical NRZ signal or inside the time width of each bit of the electrical NRZ signal.
本発明によれば、伝送速度Ｘ１の電気ＮＲＺ信号と、伝送速度Ｘ１の１ビット分の時間幅を１周期とする周波数Ｘ２の電気正弦波信号とを、各電極に印加すると共に、電気ＮＲＺ信号の各ビットの時間幅の中心に、若しくは、電気ＮＲＺ信号の各ビットの時間幅の内側に、電気正弦波信号の極小点が来るようにしたので、ｐ側電極に印加した信号とｎ側電極に印加した信号との電位差が大きくなるピークが、電気ＮＲＺ信号の各ビットの時間幅の中に必ず存在するので、直接変調型半導体レーザのキャリア密度をあげて、キャリア密度の不足を解消することができ、その結果、良好なアイ開口を得ることができる。 According to the present invention, an electrical NRZ signal having a transmission rate X1 and an electrical sine wave signal having a frequency X2 having a period of one bit of the transmission rate X1 as one cycle are applied to each electrode, and the electrical NRZ signal is applied. Since the minimum point of the electric sine wave signal comes to be at the center of the time width of each bit or inside the time width of each bit of the electric NRZ signal, the signal applied to the p-side electrode and the n-side electrode Since there is always a peak in the time width of each bit of the electrical NRZ signal, the peak of the potential difference from the signal applied to the signal is increased, thereby increasing the carrier density of the direct modulation semiconductor laser and eliminating the lack of carrier density. As a result, a good eye opening can be obtained.
以下、図１〜図２を用いて、本発明に係る直接変調型半導体レーザの実施形態を説明する。 Hereinafter, an embodiment of a direct modulation semiconductor laser according to the present invention will be described with reference to FIGS.
（実施例１）
図１は、本実施例の直接変調型半導体レーザを示す斜視図である。
本実施例の直接変調型半導体レーザでは、絶縁基板（若しくは半絶縁基板）１０１上に、ｎ−ＩｎＰ層１０２、ｎ型のキャップ層１０３、ｎ−ＩｎＰ１０４、活性層１０６、ガイド層１０７を順次形成すると共に、ガイド層１０７上に回折格子１０８を形成し、更にその上に、ｐ−ＩｎＰ１０９、ｐ型のキャップ層１１０を順次形成している。又、ｎ−ＩｎＰ１０４の上層部分、活性層１０６、ガイド層１０７、ｐ−ＩｎＰ１０９の下層部分はメサ構造に形成されており、その側面は埋込層１０５で埋め込まれている。
Example 1
FIG. 1 is a perspective view showing a direct modulation semiconductor laser according to the present embodiment.
In the direct modulation semiconductor laser of this embodiment, an n-InP layer 102, an n-type cap layer 103, an n-InP 104, an active layer 106, and a guide layer 107 are sequentially formed on an insulating substrate (or semi-insulating substrate) 101. At the same time, a diffraction grating 108 is formed on the guide layer 107, and a p-InP 109 and a p-type cap layer 110 are sequentially formed thereon. Further, the upper layer portion of the n-InP 104, the active layer 106, the guide layer 107, and the lower layer portion of the p-InP 109 are formed in a mesa structure, and the side surfaces thereof are buried with the buried layer 105.
そして、ｎ側電極１１２の取り出しのため、素子表面側からキャップ層１０３まで到達する深さの電極取り出し用溝１１４を形成しており、又、素子分離のため、素子表面側から絶縁基板１０１まで到達する深さの素子分離溝１１５を形成している。 An electrode extraction groove 114 having a depth reaching the cap layer 103 from the element surface side is formed for extracting the n-side electrode 112, and from the element surface side to the insulating substrate 101 for element isolation. An element isolation groove 115 having a reaching depth is formed.
電極取り出し用溝１１４、素子分離溝１１５の形成後、素子表面に絶縁膜１１３を形成し、その後、キャップ層１０３及びキャップ層１１０上の絶縁膜１１３の一部を剥離し、剥離後のキャップ層１０３上にはｎ側電極１１２を、剥離後のキャップ層１１０上にはｐ側電極１１１を形成している。 After forming the electrode extraction groove 114 and the element isolation groove 115, an insulating film 113 is formed on the surface of the element, and then the cap layer 103 and a part of the insulating film 113 on the cap layer 110 are peeled off, and the cap layer after peeling. An n-side electrode 112 is formed on 103, and a p-side electrode 111 is formed on the cap layer 110 after peeling.
通常、直接変調型半導体レーザは、光送信機を構成する際に、基板側が金属等の台座に取り付けられるが、本実施例の場合、ｐ側電極１１１及びｎ側電極１１２が共に接地されないようにするため、絶縁基板１０１（若しくは半絶縁基板）上に直接変調型半導体レーザの素子部分を形成しており、これにより、後述する電気信号の印加を可能としている。なお、ｐ側電極１１１及びｎ側電極１１２が共に接地されなければ、絶縁基板（若しくは半絶縁基板）に限らず、半導体基板上に直接変調型半導体レーザを形成してもよい。 Normally, the direct modulation type semiconductor laser is mounted on a base made of metal or the like when configuring an optical transmitter. In this embodiment, the p-side electrode 111 and the n-side electrode 112 are not grounded together. Therefore, the element portion of the modulation type semiconductor laser is directly formed on the insulating substrate 101 (or semi-insulating substrate), thereby enabling application of an electric signal to be described later. If both the p-side electrode 111 and the n-side electrode 112 are not grounded, the modulation type semiconductor laser may be formed directly on the semiconductor substrate, not limited to the insulating substrate (or semi-insulating substrate).
なお、埋込層１０５としては、ルテニウム（Ｒｕ）をドープしたＩｎＰ、鉄（Ｆｅ）をドープしたＩｎＰ、プロトン（Ｈ+）を注入したＩｎＰ、又は、ｎ−ＩｎＰとｐ−ＩｎＰを上下に配したｐｎ接合、ポリイミド埋込等を利用できる。 As the buried layer 105, ruthenium (Ru) doped InP, iron (Fe) doped InP, proton (H + ) implanted InP, or n-InP and p-InP are arranged vertically. A pn junction, polyimide embedding or the like can be used.
そして、本実施例の直接変調型半導体レーザでは、ｐ側電極１１１、ｎ側電極１１２に各々独立して、後述する電気信号を印加することにより、直接変調型半導体レーザのキャリア密度をあげて、キャリア密度の不足を解消している。 In the direct modulation semiconductor laser of this example, the carrier density of the direct modulation semiconductor laser is increased by applying an electrical signal described later independently to each of the p-side electrode 111 and the n-side electrode 112. The lack of carrier density has been resolved.
具体的には、本実施例では、上記構成の直接変調型半導体レーザにおいて、伝送速度Ｘ１の信号光を出力するため、ｐ側電極１１１、ｎ側電極１１２の一方側に、伝送速度Ｘ１の電気ＮＲＺ（Non Return to Zero）信号を印加し、他方側に伝送速度Ｘ１の１ビット分の時間幅を１周期とする周波数Ｘ２の電気正弦波信号を印加している。加えて、電気ＮＲＺ信号の各ビットの時間幅の中心に、若しくは、電気ＮＲＺ信号の各ビットの時間幅の内側に、電気正弦波信号の極小点が来るようにしている。 Specifically, in the present embodiment, in the direct modulation semiconductor laser having the above-described configuration, the signal light having the transmission speed X1 is output, so that the electrical signal having the transmission speed X1 is provided on one side of the p-side electrode 111 and the n-side electrode 112. An NRZ (Non Return to Zero) signal is applied, and an electric sine wave signal having a frequency X2 with a time width of one bit of the transmission speed X1 as one cycle is applied to the other side. In addition, the minimum point of the electric sine wave signal is located at the center of the time width of each bit of the electric NRZ signal or inside the time width of each bit of the electric NRZ signal.
例えば、本実施例の直接変調型半導体レーザから伝送速度Ｘ１＝２５Ｇｂ／ｓの信号光を得るために、ｐ側電極１１１に伝送速度Ｘ１＝２５Ｇｂ／ｓの電気ＮＲＺ信号を印加する場合、ｎ型電極１１２に周波数Ｘ２＝２５ＧＨｚの電気正弦波信号を印加している。つまり、伝送速度Ｘ１の１ビット分の時間幅を１周期とする周波数Ｘ２とは、数字だけ見れば、Ｘ１＝Ｘ２である。 For example, when an electric NRZ signal having a transmission speed X1 = 25 Gb / s is applied to the p-side electrode 111 in order to obtain signal light having a transmission speed X1 = 25 Gb / s from the direct modulation semiconductor laser of this embodiment, the n-type is used. An electric sine wave signal having a frequency X2 = 25 GHz is applied to the electrode 112. In other words, the frequency X2 having a time width of one bit of the transmission speed X1 as one cycle is X1 = X2 if only the numbers are viewed.
又、電気ＮＲＺ信号と電気正弦波信号との間の位相については、例えば、図２に示すように、ｐ側電極１１１に印加した電気ＮＲＺ信号の各ビットの時間幅の中心に、ｎ側電極１１２に印加した電気正弦波信号の極小点がくるようにしている。この位相は多少ずれても良く、電気ＮＲＺ信号及び電気正弦波信号は共に同じ周期と言えるので、電気ＮＲＺ信号の各ビットの時間幅の内側に、電気正弦波信号の極小点があればよい。なお、この位相は、ｐ側電極１１１及びｎ型電極１１２までの配線長により設定可能であり、所望の位相となるように、ｐ側電極１１１及びｎ型電極１１２までの配線長を形成すればよい。 As for the phase between the electric NRZ signal and the electric sine wave signal, for example, as shown in FIG. 2, the n-side electrode is placed at the center of the time width of each bit of the electric NRZ signal applied to the p-side electrode 111. The minimum point of the electric sine wave signal applied to 112 is made to come. This phase may be slightly shifted, and both the electric NRZ signal and the electric sine wave signal can be said to have the same period. Therefore, it is sufficient that the electric sine wave signal has a minimum point inside the time width of each bit of the electric NRZ signal. This phase can be set by the wiring length to the p-side electrode 111 and the n-type electrode 112, and if the wiring length to the p-side electrode 111 and the n-type electrode 112 is formed so as to be a desired phase. Good.
このようにすると、ｐ側電極１１１に印加した信号とｎ側電極１１２に印加した信号との電位差が大きくなるピークが、電気ＮＲＺ信号の各ビットの時間幅の中に必ず存在することになる。すると、電気ＮＲＺ信号の各ビットの中心又は時間幅内において、つまり、直接変調型半導体レーザから出力される信号光の各ビットの中心又は時間幅内において、活性層１０６に加わる電界が大きくなり、キャリアが増加することになる。これによりキャリア密度不足を解消することができ、良好なアイ開口を得ることになる（波形整形効果）。 In this way, a peak in which the potential difference between the signal applied to the p-side electrode 111 and the signal applied to the n-side electrode 112 is always present in the time width of each bit of the electrical NRZ signal. Then, in the center or time width of each bit of the electrical NRZ signal, that is, in the center or time width of each bit of the signal light output from the direct modulation type semiconductor laser, the electric field applied to the active layer 106 increases. Your career will increase. Thereby, the carrier density deficiency can be solved and a good eye opening can be obtained (waveform shaping effect).
本発明は、光送信機を構成する直接変調型半導体レーザに好適なものである。 The present invention is suitable for a direct modulation semiconductor laser constituting an optical transmitter.
１０１ 絶縁基板
１０２ ｎ−ＩｎＰ
１０３ キャップ層
１０４ ｎ−ＩｎＰ
１０５ 埋込層
１０６ 活性層
１０７ ガイド層
１０８ 回折格子
１０９ ｐ−ＩｎＰ
１１０ キャップ層
１１１ ｐ側電極
１１２ ｎ側電極
１１３ 絶縁膜
１１４ 電極取り出し溝
101 Insulating substrate 102 n-InP
103 Cap layer 104 n-InP
105 buried layer 106 active layer 107 guide layer 108 diffraction grating 109 p-InP
110 Cap layer 111 P-side electrode 112 N-side electrode 113 Insulating film 114 Electrode extraction groove
Claims (1)
ｐ側電極及びｎ側電極を共に接地しないように形成し、
前記ｐ側電極、前記ｎ側電極の一方の電極に伝送速度Ｘ１の電気ＮＲＺ信号を印加し、他方の電極に前記伝送速度Ｘ１の１ビット分の時間幅を１周期とする周波数Ｘ２の電気正弦波信号を印加すると共に、
前記電気ＮＲＺ信号の各ビットの時間幅の中心に、若しくは、前記電気ＮＲＺ信号の各ビットの時間幅の内側に、前記電気正弦波信号の極小点が来るようにしたことを特徴とする直接変調型半導体レーザ。 In a direct modulation semiconductor laser that outputs signal light having a transmission speed X1,
forming both the p-side electrode and the n-side electrode so as not to be grounded,
An electric sine of frequency X2 in which an electric NRZ signal having a transmission speed X1 is applied to one of the p-side electrode and the n-side electrode, and a time width corresponding to one bit of the transmission speed X1 is set to one cycle. While applying a wave signal,
The direct modulation characterized in that the minimum point of the electric sine wave signal comes to the center of the time width of each bit of the electric NRZ signal or inside the time width of each bit of the electric NRZ signal. Type semiconductor laser.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013066318A1 (en) * | 2011-11-01 | 2013-05-10 | Hewlett-Packard Development Company, L.P. | Direct modulated laser |
| US10193634B2 (en) | 2016-09-19 | 2019-01-29 | Hewlett Packard Enterprise Development Lp | Optical driver circuits |
| US10366883B2 (en) | 2014-07-30 | 2019-07-30 | Hewlett Packard Enterprise Development Lp | Hybrid multilayer device |
| US10381801B1 (en) | 2018-04-26 | 2019-08-13 | Hewlett Packard Enterprise Development Lp | Device including structure over airgap |
| US10658177B2 (en) | 2015-09-03 | 2020-05-19 | Hewlett Packard Enterprise Development Lp | Defect-free heterogeneous substrates |
| US11088244B2 (en) | 2016-03-30 | 2021-08-10 | Hewlett Packard Enterprise Development Lp | Devices having substrates with selective airgap regions |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5660084A (en) * | 1979-10-23 | 1981-05-23 | Fujitsu Ltd | Laser driving system |
| JPH0422180A (en) * | 1990-05-17 | 1992-01-27 | Mitsubishi Electric Corp | semiconductor laser equipment |
| JPH06291729A (en) * | 1993-02-25 | 1994-10-18 | American Teleph & Telegr Co <Att> | Article including semiconductor laser, and method for operating the same |
| JPH07249824A (en) * | 1994-03-10 | 1995-09-26 | Hitachi Ltd | Semiconductor laser device and manufacturing method thereof |
-
2009
- 2009-06-01 JP JP2009132267A patent/JP2010278396A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5660084A (en) * | 1979-10-23 | 1981-05-23 | Fujitsu Ltd | Laser driving system |
| JPH0422180A (en) * | 1990-05-17 | 1992-01-27 | Mitsubishi Electric Corp | semiconductor laser equipment |
| JPH06291729A (en) * | 1993-02-25 | 1994-10-18 | American Teleph & Telegr Co <Att> | Article including semiconductor laser, and method for operating the same |
| JPH07249824A (en) * | 1994-03-10 | 1995-09-26 | Hitachi Ltd | Semiconductor laser device and manufacturing method thereof |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013066318A1 (en) * | 2011-11-01 | 2013-05-10 | Hewlett-Packard Development Company, L.P. | Direct modulated laser |
| US8937981B2 (en) | 2011-11-01 | 2015-01-20 | Hewlett-Packard Development Company, L.P. | Direct modulated laser |
| TWI497852B (en) * | 2011-11-01 | 2015-08-21 | Hewlett Packard Development Co | Direct modulated laser |
| US9190805B2 (en) | 2011-11-01 | 2015-11-17 | Hewlett-Packard Development Company, L.P. | Direct modulated laser |
| US10366883B2 (en) | 2014-07-30 | 2019-07-30 | Hewlett Packard Enterprise Development Lp | Hybrid multilayer device |
| US10658177B2 (en) | 2015-09-03 | 2020-05-19 | Hewlett Packard Enterprise Development Lp | Defect-free heterogeneous substrates |
| US11004681B2 (en) | 2015-09-03 | 2021-05-11 | Hewlett Packard Enterprise Development Lp | Defect-free heterogeneous substrates |
| US11088244B2 (en) | 2016-03-30 | 2021-08-10 | Hewlett Packard Enterprise Development Lp | Devices having substrates with selective airgap regions |
| US10193634B2 (en) | 2016-09-19 | 2019-01-29 | Hewlett Packard Enterprise Development Lp | Optical driver circuits |
| US10530488B2 (en) | 2016-09-19 | 2020-01-07 | Hewlett Packard Enterprise Development Lp | Optical driver circuits |
| US10381801B1 (en) | 2018-04-26 | 2019-08-13 | Hewlett Packard Enterprise Development Lp | Device including structure over airgap |
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