JP2010278103A - Scrub cleaning equipment - Google Patents

Abstract

To provide a scrub cleaning apparatus suitable for cleaning a large active thin wafer.
The scrub cleaning apparatus includes a support member that holds an outer peripheral edge of an ultra-thin wafer and supports the wafer in a horizontal state, and a drive unit that rotates the support member at a predetermined number of rotations. And a roll brush 9 disposed on the wafer surface and having a rotation axis parallel to the wafer surface, and a supply unit that supplies the cleaning liquid 10 to the wafer surface, and jets a liquid such as a water flow toward the wafer back side. And a nozzle 11 as a wafer plane maintaining means for maintaining the planar state of the wafer surface. According to this apparatus, even during the scrub cleaning in which the cleaning liquid tends to accumulate in the center of the wafer, the planar state of the wafer surface is maintained by the action of the wafer plane maintaining means, so that good scrub cleaning can be stably performed. it can.
[Selection] Figure 3

Description

  The present invention relates to a scrub cleaning apparatus that frictionally cleans a wafer, and more particularly to an improvement of a scrub cleaning apparatus suitable for cleaning an ultrathin wafer having a thickness of 200 μm or less.

  With recent downsizing and thinning of electronic devices and optical devices, there is a need for downsizing and thinning of each element constituting these devices. Especially, downsizing of digital cameras and camera-equipped mobile phones, Thinning is remarkable. For example, attention is paid to an ultraviolet light (which may be referred to as UV) -infrared light (which may be referred to as IR) cut filter used together with an imaging device composed of a CCD (Charge Coupled Device) or a CMOS (Complementary Metal-Oxide Semiconductor). To do. That is, since an imaging device composed of a CCD or CMOS has sensitivity other than the visible wavelength region, image noise occurs when ultraviolet light or near-infrared light unrelated to a visible image enters the imaging device composed of a CCD or CMOS. In order to prevent this image noise, it is necessary to arrange the UV-IR cut filter that transmits only light in the visible wavelength range and blocks ultraviolet light and near infrared light immediately before the CCD or CMOS.

  In addition, a UV-IR cut filter mounted on a camera module such as a small and thin digital camera or a camera-equipped mobile phone needs to be thin because the installation space is narrow. The UV-IR cut filter is composed of a substrate and a dielectric multilayer film. Since the total thickness of the dielectric multilayer film itself is only a few μm, the UV-IR cut filter is thinned according to the installation space. In order to do so, it is necessary to make the substrate thinner.

  Conventionally, a structure that is mounted on a camera module by attaching a CCD (CCD chip) with an element size obtained by dicing and a UV-IR cut filter (filter with an element size) has been manufactured individually. If the size of the UV-IR cut filter obtained using the surface positive thin substrate (wafer) and the wafer size of the CCD or CMOS are the same, the UV-IR cut obtained using the large surface positive thin substrate After bonding a filter (that is, a wafer size filter) and a CCD or CMOS wafer, and cutting into an element size, a plurality of the above structures can be obtained at the same time, and the manufacturing process can be simplified. .

  By the way, when manufacturing a UV-IR cut filter composed of the substrate and the dielectric multilayer film, the substrate must be cleaned in order to form a high-quality dielectric multilayer film on the substrate. In addition, it is necessary to miniaturize the UV-IR cut filter used in an imaging device composed of a CCD or CMOS in which one pixel size is miniaturized as a result of miniaturization and thinning of an optical device or the like. In addition, since the defect level of the UV-IR cut filter becomes very small with this miniaturization, scrub cleaning that physically removes contaminants is effective for the cleaning.

  There are two scrub cleaning methods depending on the rotation direction of the roll brush with respect to the substrate (wafer) surface. One of them is a mechanism for rotating a substrate (wafer) while maintaining a horizontal state, and a scrubbing by a roll brush disposed on the surface of the substrate (wafer) and having a rotation axis parallel to the surface of the substrate (wafer). This is a cleaning method (see Patent Document 1), and the other is a mechanism for rotating the substrate (wafer) while maintaining a horizontal state, and the substrate (wafer) surface disposed on the substrate (wafer) surface. Scrub cleaning with a roll brush having a rotation axis perpendicular to the surface (see Patent Document 2). In any scrub cleaning method, in order to perform scrub cleaning using a porous roll brush, it is necessary to supply cleaning water (cleaning liquid) to the surface of the substrate (wafer).

  That is, as shown in FIG. 1A, a mechanism for rotating the substrate (wafer) 1 while maintaining a horizontal state, and a surface disposed on the surface of the substrate (wafer) 1 and relative to the surface of the substrate (wafer) 1 In the method of scrub cleaning with a roll brush 2 having parallel rotation axes, it is necessary to supply cleaning water (cleaning liquid) 3 from above the surface of the substrate (wafer) 1 as shown in FIG. However, during scrub cleaning, since the rotation speed of the substrate (wafer) 1 is low, the supplied cleaning liquid 3 accumulates in the center of the substrate (wafer) 1 and the weight of the substrate (wafer) 1 is centered. The part may be recessed downward. When the substrate (wafer) 1 is the above-described ultrathin substrate (wafer), the above-described deformation to the lower side becomes remarkable, and an area where the roll brush 2 and the substrate (wafer) 1 do not contact is generated. There was a problem that the friction cleaning with the brush 2 was insufficient.

  Also, as shown in FIG. 2A, a mechanism for rotating the substrate (wafer) 4 while maintaining a horizontal state, and a surface disposed on the surface of the substrate (wafer) 4 and with respect to the surface of the substrate (wafer) 4 Even in a method of scrub cleaning with a roll brush 5 having a vertical rotation axis, if cleaning liquid (cleaning water) 6 is supplied as shown in FIG. 2B, the rotation speed of the substrate (wafer) 4 is low during scrub cleaning. For this reason, the supplied cleaning liquid 6 may accumulate in the center of the substrate (wafer) 4 and the center of the substrate (wafer) 4 may be recessed downward due to its weight. When the substrate (wafer) 4 is an ultra-thin substrate (wafer), the downward deformation becomes remarkable, and an area where the roll brush 5 and the substrate (wafer) 4 do not contact is generated. There is also a problem that the friction cleaning with the roll brush 5 becomes insufficient.

  Therefore, in order to avoid this problem and enable the above-mentioned ultrathin substrate (wafer) to be scrubbed well, in Patent Document 3, the substrate (wafer) is sucked into a ceramic chuck (porous ceramic plate). A method of fixing and scrub cleaning has been proposed. However, optical components such as UV-IR cut filters that transmit light often have an optical thin film formed on both sides of the substrate, so it is necessary to improve the degree of cleaning on both sides of the substrate. It has been a problem to make the contact with other parts such as a ceramic chuck.

  In FIG. 1, symbol a indicates the rotation direction of the mechanism that rotates the substrate (wafer) 1, and symbol b indicates the rotation direction of the roll brush 2. In FIG. 2, the symbol a indicates the rotation direction of the mechanism that rotates the substrate (wafer) 4, the symbol c indicates the rotation direction of the roll brush 5, and the symbols d 1 and d 2 indicate the swinging direction of the roll brush 5. Is shown.

Japanese Patent Laying-Open No. 2004-298767 (see paragraph 0004 and FIG. 1) Japanese Patent Laid-Open No. 08-71511 (see paragraph 0012) Japanese Unexamined Patent Publication No. 2003-1000068 (see paragraph 0022)

  The present invention has been made paying attention to such problems, and the problem is that even when an extremely thin substrate (wafer) is scrubbed, the back side of the substrate (wafer) is replaced with other components. An object of the present invention is to provide a scrub cleaning apparatus capable of maintaining a substrate (wafer) in a horizontal state without contact.

  Therefore, in order to solve the above-mentioned problems, an experiment was carried out in which a substrate (wafer) was floated by continuously spraying a liquid or gas such as water toward the back side of the substrate (wafer) during scrub cleaning. It has been found that the substrate (wafer) can be maintained in a horizontal state despite the low rotation speed of the wafer. The present invention has been completed based on such technical findings.

That is, the invention according to claim 1
A support member that holds the outer peripheral edge of the wafer and rotatably supports the wafer in a horizontal state; a drive unit that rotates the support member at a predetermined number of rotations; and a wafer disposed on the wafer surface and with respect to the wafer surface In a scrub cleaning apparatus that includes a roll brush having a rotation axis that is parallel or perpendicular to the wafer and a supply unit that supplies the cleaning liquid to the wafer surface, and that frictionally cleans the wafer surface with the cleaning liquid and the roll brush.
Wafer plane maintaining means for spraying fluid toward the back side of the wafer to maintain the planar state of the wafer surface is provided.

The invention according to claim 2
In the scrub cleaning apparatus according to the invention of claim 1,
The wafer plane maintaining means is constituted by a liquid ejecting member that ejects liquid to at least one place on the wafer back side,
The invention according to claim 3
In the scrub cleaning apparatus according to the invention of claim 1,
The wafer plane maintaining means is constituted by a gas injection member that injects gas to at least one place on the wafer rear surface side.

The invention according to claim 4
In the scrub cleaning apparatus according to the invention of claim 1,
The wafer is an ultra-thin wafer having a diameter of 200 mm or more and a thickness of 200 μm or less selected from glass, quartz, ceramics, and a crystal material.

  The scrub cleaning apparatus according to the present invention includes a support member that holds a wafer outer peripheral edge and rotatably supports the wafer in a horizontal state, a drive unit that rotates the support member at a predetermined number of rotations, and the wafer surface A roll brush disposed on the surface and having a rotation axis parallel or perpendicular to the wafer surface, and a supply unit for supplying a cleaning liquid to the wafer surface. A wafer plane maintaining means for maintaining the plane state is provided.

  According to the scrub cleaning apparatus of the present invention, the planar state of the wafer surface is maintained by the action of the wafer plane maintaining means even during the scrub cleaning in which the cleaning liquid tends to accumulate in the center of the wafer. In the structure in which the generation of a non-contact area with the wafer is suppressed and good scrub cleaning can be stably performed, and wafer plane maintaining means for ejecting fluid toward the back side of the wafer is attached to the apparatus main body. Therefore, the improved scrub cleaning apparatus can be provided at low cost.

FIG. 1A is a schematic configuration diagram of a scrub cleaning apparatus according to a conventional example in which a roll brush having a rotation axis parallel to the surface of a wafer to be cleaned is used, and FIG. 1B shows a defect of this apparatus. Illustration. FIG. 2A is a schematic configuration diagram of a scrub cleaning apparatus according to a conventional example in which a roll brush having a rotation axis perpendicular to the wafer surface to be cleaned is used, and FIG. 2B shows a defect of this apparatus. Illustration. FIG. 3A is a schematic cross-sectional view of a scrub cleaning apparatus according to the present invention, in which a roll brush having a rotation axis parallel to the wafer surface is used, provided with wafer plane maintaining means (liquid ejection method). 3 (B) is a schematic configuration plan view of the scrub cleaning apparatus. FIG. 4A is a schematic cross-sectional view of a scrub cleaning apparatus according to the present invention in which a roll brush having a rotation axis perpendicular to the wafer surface is used, provided with wafer plane maintaining means (liquid ejection method). 4 (B) is a schematic plan view of the scrub cleaning apparatus. FIG. 5A is a schematic cross-sectional view of a scrub cleaning apparatus according to the present invention in which a roll brush having a rotation axis parallel to the wafer surface and provided with wafer plane maintaining means (gas injection method) is used. 5 (B) is a schematic plan view of the scrub cleaning apparatus. FIG. 6A is a schematic cross-sectional view of a scrub cleaning apparatus according to the present invention, in which a roll brush having a rotation axis perpendicular to the wafer surface is used, provided with wafer plane maintaining means (gas injection method). 6 (B) is a schematic configuration plan view of the scrub cleaning apparatus.

First, a scrub cleaning apparatus according to the present invention includes a support member that holds a wafer outer peripheral edge and rotatably supports the wafer in a horizontal state, a drive unit that rotates the support member at a predetermined rotational speed, A scrub cleaning system comprising a roll brush disposed on the wafer surface and having a rotation axis parallel or perpendicular to the wafer surface and a supply unit for supplying a cleaning liquid to the wafer surface, wherein the wafer surface is frictionally cleaned by the cleaning liquid and the roll brush. In the device
Wafer plane maintaining means for spraying fluid toward the back side of the wafer to maintain the planar state of the wafer surface is provided.

  The wafer plane maintaining means for spraying fluid toward the back side of the wafer to maintain the planar state of the wafer surface includes a liquid jet member (liquid jet) that sprays liquid to at least one location on the wafer back side. System) or a gas injection member (gas injection system) for injecting gas to at least one or more locations on the wafer back side.

  According to the scrub cleaning apparatus according to the present invention provided with the wafer plane maintaining means, the planar state of the wafer surface is maintained by the action of the wafer plane maintaining means even during the scrub cleaning in which the cleaning liquid tends to accumulate in the center of the wafer. Therefore, the generation of non-contact areas between the roll brush and the wafer is suppressed, and good scrub cleaning can be stably performed. In particular, scrub cleaning of an ultrathin wafer in which an optical thin film is formed on both surfaces. Suitable for In addition, this scrub cleaning apparatus has an advantage that the manufacturing cost of the apparatus is low because the wafer plane maintaining means for injecting fluid toward the back side of the wafer is merely a structure attached to the apparatus main body. .

  Hereinafter, an example of the scrub cleaning apparatus according to the present invention in which the wafer plane maintaining means (liquid ejecting method) is incorporated is shown as the above-described large positive thin wafer as shown in FIGS. A support member 8 that holds the outer peripheral edge of the ultra-thin wafer 7 and supports the wafer 7 in a horizontal state so as to be rotatable in the direction of arrow a, and a drive of a motor or the like that rotates the support member 8 at a predetermined rotational speed. A roller (not shown), a roll brush 9 disposed on the surface of the wafer 7 and having a rotation axis parallel to the surface of the wafer 7, and a supply unit for supplying the cleaning liquid 10 to the surface of the wafer 7; , 5 nozzles (liquid injection method) as wafer plane maintaining means (liquid injection method) for maintaining the plane state of the surface of the wafer 7 by injecting a liquid such as a water flow toward the back surface side of the wafer 7 at the part where the roll brush 9 contacts Injection member) 11 It is characterized in that is provided.

  If a strong water flow is applied to a part of the ultrathin wafer 7 from the nozzle (liquid ejecting member) 11, only the vicinity of the ultrathin wafer 7 to be ejected rises, and the resistance of the roll brush 9 increases the resistance of the ultrathin wafer 7. Since the ultrathin wafer 7 may break in the vicinity of the jet, it is necessary to adjust the amount of liquid such as the amount of water so that the plane state of the ultrathin wafer 7 is maintained. Further, it is desirable to maintain the planar state of the ultra-thin wafer 7 by using a plurality of water streams and the like using the thick nozzle 11 so that the liquid such as the water stream is dispersed over a wide range.

  4A to 4B show a modification of the scrub cleaning apparatus according to the present invention in which roll brushes of different systems are used and a wafer plane maintaining means (liquid injection system) is incorporated. That is, the scrub cleaning apparatus according to this modification can rotate the wafer 12 in the direction of arrow a in a horizontal state while the outer peripheral edge of the ultrathin wafer 12 is held as shown in FIGS. A support member 13 for supporting the support member 13, a drive unit (not shown) for rotating the support member 13 at a predetermined number of rotations, and a rotation axis disposed on the surface of the wafer 12 and perpendicular to the surface of the wafer 12. A roll brush 14 and a supply unit for supplying the cleaning liquid 15 to the surface of the wafer 12 are provided, and a liquid such as a water stream is jetted toward the back surface side of the wafer 12 at a position where the roll brush 14 comes into contact with the surface of the wafer 12. Three nozzles (liquid ejecting members) 16 as wafer plane maintaining means (liquid ejecting method) for maintaining the state are provided.

  The roll brush 14 is configured to be held by a brush holding member 50 having a rotation shaft e as shown in FIG. 4B and swing in the direction of arrows d1-d2. The three nozzles (liquid ejecting members) 16 are arranged along the trajectory direction of the roll brush 14 that swings in the direction of the arrows d1-d2, and the back side of the wafer 12 where the roll brush 14 contacts. A flat state of the surface of the wafer 12 is maintained by spraying an appropriate amount of water flow or the like.

  Next, FIGS. 5A to 5B show a modification of the scrub cleaning apparatus according to the present invention in which a wafer plane maintaining means (gas injection method) is incorporated. That is, in this scrub cleaning apparatus, as shown in FIGS. 5A to 5B, the outer peripheral edge of the ultrathin wafer 21 is held and the wafer 21 is supported in a horizontal state so as to be rotatable in the direction of arrow a. A member 24, a drive unit (not shown) for rotating the support member 24 at a predetermined number of rotations, and a roll brush 22 disposed on the surface of the wafer 21 and having a rotation axis parallel to the surface of the wafer 21; And a supply unit for supplying the cleaning liquid 23 to the surface of the wafer 21 and a plane of the surface of the wafer 21 by injecting an appropriate amount of gas from a plate having a large number of holes or a porous plate toward substantially the entire back side of the wafer 21. A gas injection member 25 as a wafer plane maintaining means (gas injection method) for maintaining the state is provided.

  According to the scrub cleaning apparatus according to the modified example, during scrub cleaning, gas is always sprayed from the gas injection member 25 toward the back side of the wafer 21. Since the cleaning liquid 23 is difficult to be transmitted to the back surface of the wafer 21 during rotation, there is an advantage that the generation of dry spots due to the drying of the cleaning liquid 23 can be reduced. However, it should be noted that if the gas flow rate from the gas injection member 25 is too large, the wafer 21 may be detached from the support member 24.

  6 (A) to 6 (B) show a modification of the scrub cleaning apparatus according to the present invention in which roll brushes having different methods are used and a wafer plane maintaining means (gas injection method) is incorporated. That is, in the scrub cleaning apparatus according to this modification, as shown in FIGS. 6A to 6B, the outer peripheral edge of the ultrathin wafer 26 is held and the wafer 26 can be rotated in the direction of arrow a in a horizontal state. A support member 27 for supporting the support member 27, a drive unit (not shown) for rotating the support member 27 at a predetermined number of rotations, and a rotation axis disposed on the surface of the wafer 26 and perpendicular to the surface of the wafer 26. A roll brush 28 and a supply unit for supplying a cleaning liquid 29 to the surface of the wafer 26 are provided, and an appropriate amount of gas is jetted from a plate with a large number of holes or a porous plate toward the substantially entire back side of the wafer 26. 26 is provided with a gas injection member 30 as a wafer plane maintaining means (gas injection method) for maintaining the planar state of the surface.

  The roll brush 28 is configured to be held by a brush holding member 51 having a rotating shaft e as shown in FIG. 6 (B) and swing in the direction of arrows d1-d2. An appropriate amount of gas is sprayed from 30 to substantially the entire back side of the wafer 26 so that the planar state of the surface of the wafer 26 is maintained.

  Next, specific examples of the present invention will be described.

  For the ultra-thin wafers in the examples, three types obtained by polishing “D263 glass manufactured by Shot Corporation” having a diameter of 200 mm to a thickness of 300 μm, a thickness of 200 μm, and a thickness of 100 μm, respectively, and Three types of ultra-thin wafers are subjected to double-sided optical polishing.

  A roll brush having a rotation axis parallel to the surface of the ultra-thin wafer uses a PVA sponge (Berclin: registered trademark) having a diameter of about 50 mm and a length of 250 mm, and a rotation axis perpendicular to the surface of the ultra-thin wafer. A PVA sponge (Berclin: registered trademark) having a diameter of about 50 mm and a length of 50 mm was used for the roll brush having the diameter.

  Also, during the scrub cleaning, the rotation speed of the ultrathin wafer is 50 rpm, the rotation speed of the roll brush is 200 rpm, and 1 L (liter) of ultrapure water per minute from the top of the ultrathin wafer is used as the cleaning liquid. Injected (supplied) near the part.

  In addition, ultra pure water or nitrogen gas is sprayed from the liquid spray member or gas liquid spray member toward the back side of the ultra-thin wafer, and the spray amount is adjusted so that the flat state of the ultra-thin wafer is maintained during scrub cleaning. did.

  Then, after scrub cleaning is performed for 60 seconds, the roll brush is separated from the ultrathin wafer, the injection (supply) of the cleaning liquid injected (supplied) from the top of the ultrathin wafer is stopped, and the rotation speed of the ultrathin wafer Was dried at 1500 rpm.

  Here, when an optical thin film is formed on both sides of a substrate like an optical component such as a UV-IR cut filter, it is necessary to perform scrub cleaning on the back surface in the same manner as the front surface by exchanging the front surface and back surface (upper and lower) of the wafer. There is.

  Note that whether or not the roll brush is in contact with the ultrathin wafer is confirmed not only by observation from the horizontal direction but also by the presence or absence of the cleaning effect. That is, it is known that if the roll brush is in contact with the ultrathin wafer and the scrub cleaning is performed well, the contamination layer on the ultrathin wafer surface is removed and the contact angle of pure water becomes extremely small. Since the contact angle of the ultrathin wafer before scrub cleaning is 30 degrees or more, the presence or absence of the cleaning effect of the ultrathin wafer was determined using a contact angle measuring device.

Scrub cleaning using the scrub cleaning apparatus of the present invention shown in FIGS. 3A to 3B in which five nozzles (liquid ejecting members) 11 are incorporated as wafer plane maintaining means (liquid ejecting method) will be described.
(When scrub cleaning target is a 300μm thick wafer)
First, a glass wafer 7 having a diameter of 200 mm and a thickness of 300 μm was set on the support member 8. Then, after the rotation speed of the wafer 7 is set to 50 rpm and the rotation speed of the roll brush 9 is set to 200 rpm, 1 L (liter) of ultrapure water per minute is injected from the upper part of the wafer 7 to the vicinity of the center of the wafer 7 The brush 9 was brought into contact with the surface of the wafer 7. At this time, when the state of the wafer 7 was observed from the horizontal direction, it was confirmed that the wafer 7 was almost flat and the entire roll brush 9 was in contact with the wafer 7.

  Next, after separating the roll brush 9 from the surface of the wafer 7, injection of ultrapure water injected from the upper part of the wafer 7 was stopped, and the rotation speed of the wafer 7 was increased to 1500 rpm and spin drying was performed for 120 seconds.

  And as a result of measuring the contact angle about every 20 mm in the radial direction from the center of the wafer 7 removed from the support member 8, the contact angle was 5 degrees or less at all measurement points.

From this result, when the object to be scrubbed is a wafer having a thickness of 300 μm, the wafer 7 is maintained in a planar state without operating the nozzle (liquid ejecting member) as the wafer plane maintaining means (liquid ejecting method). This shows that the entire surface has been scrubbed.
(When scrub cleaning target is 200μm thick thin wafer)
Next, a glass wafer 7 having a diameter of 200 mm and a thickness of 200 μm was set on the support member 8. Then, after the rotational speed of the ultrathin wafer 7 is 50 rpm and the rotational speed of the roll brush 9 is 200 rpm, 1 L (liter) of ultrapure water from the top of the ultrathin wafer 7 is near the center of the ultrathin wafer 7. The roll brush 9 was brought into contact with the surface of the ultrathin wafer 7 while being injected into the wafer. At this time, when the state of the ultrathin wafer 7 was observed from the horizontal direction, it was confirmed that the central portion of the ultrathin wafer 7 was recessed by about 2 mm, and the roll brush 9 was not in contact with the central portion of the ultrathin wafer 7. .

  Next, after separating the roll brush 9 from the surface of the ultrathin wafer 7, the injection of ultrapure water injected from the top of the ultrathin wafer 7 is stopped, and the rotation speed of the ultrathin wafer 7 is increased to 1500 rpm and spinned for 120 seconds. Drying was performed.

  And as a result of measuring the contact angle about every 20 mm in the radial direction from the center of the ultra-thin wafer 7 removed from the support member 8, the contact angle is 30 degrees or more at a measurement point within 60 mm from the center, As a result, the contact angle at the measurement point in the periphery was 5 degrees or less. Therefore, it was confirmed that scrubbing was not performed near the center of the ultrathin wafer 7.

  Therefore, the rotation speed of the ultrathin wafer 7 is set to 50 rpm, the rotation speed of the roll brush 9 is set to 200 rpm, and 1 L (liter) of ultrapure water is injected into the vicinity of the center of the ultrathin wafer 7 from the top of the ultrathin wafer 7. However, after the roll brush 9 is brought into contact with the surface of the ultrathin wafer 7, the wafer plane maintaining means (liquid jet system) is used so that the entire ultrathin wafer 7 comes into contact with the roll brush 9 while observing from the horizontal direction. The scrub cleaning was similarly performed by adjusting the amount of water from five nozzles (liquid ejecting members).

  And as a result of measuring the contact angle about every 20 mm in the radial direction from the center of the ultra-thin wafer 7 removed from the support member 8, the contact angle was 5 degrees or less at all measurement points.

From this result, when the object to be scrubbed for cleaning is an ultra-thin wafer having a thickness of 200 μm, it is possible to maintain the plane state of the ultra-thin wafer 7 by operating a nozzle (liquid ejecting member) as wafer plane maintaining means (liquid ejecting method). For the first time, it is shown that the entire surface of the ultrathin wafer 7 can be scrubbed.
(When scrub cleaning target is 100μm thick thin wafer)
Next, a glass wafer 7 having a diameter of 200 mm and a thickness of 100 μm was set on the support member 8. Then, after the rotational speed of the ultrathin wafer 7 is 50 rpm and the rotational speed of the roll brush 9 is 200 rpm, 1 L (liter) of ultrapure water per minute from the top of the ultrathin wafer 7 is near the center of the ultrathin wafer 7. The roll brush 9 was brought into contact with the surface of the ultrathin wafer 7 while being injected into the wafer. At this time, when the state of the ultrathin wafer 7 was observed from the horizontal direction, it was confirmed that the central portion of the ultrathin wafer 7 was recessed by about 5 mm, and the roll brush 9 was not in contact with the central portion of the ultrathin wafer 7. .

  Next, after separating the roll brush 9 from the surface of the ultrathin wafer 7, the injection of ultrapure water injected from the top of the ultrathin wafer 7 is stopped, and the rotation speed of the ultrathin wafer 7 is increased to 1500 rpm and spinned for 120 seconds. Drying was performed.

  And as a result of measuring the contact angle about 20 mm in the radial direction from the center of the ultrathin wafer 7 removed from the support member 8, the contact angle is 30 degrees or more at a measurement point within 80 mm from the center, As a result, the contact angle at the measurement point in the periphery was 5 degrees or less. Therefore, it was confirmed that scrubbing was not performed near the center of the ultrathin wafer 7.

  Therefore, the rotation speed of the ultrathin wafer 7 is set to 50 rpm, the rotation speed of the roll brush 9 is set to 200 rpm, and 1 L (liter) of ultrapure water is injected into the vicinity of the center of the ultrathin wafer 7 from the top of the ultrathin wafer 7. However, after the roll brush 9 is brought into contact with the surface of the ultrathin wafer 7, the wafer plane maintaining means (liquid jet system) is used so that the entire ultrathin wafer 7 comes into contact with the roll brush 9 while observing from the horizontal direction. The scrub cleaning was similarly performed by adjusting the amount of water from five nozzles (liquid ejecting members).

  And as a result of measuring the contact angle about every 20 mm in the radial direction from the center of the ultra-thin wafer 7 removed from the support member 8, the contact angle was 5 degrees or less at all measurement points.

  From this result, when the object to be scrub cleaned is an ultra-thin wafer having a thickness of 100 μm, the nozzle (liquid ejecting member) is operated as a wafer plane maintaining means (liquid ejecting method) as in the case of an ultra-thin wafer having a thickness of 200 μm. It is shown that the entire surface of the ultrathin wafer 7 can be scrubbed for the first time by maintaining the flat state of the ultrathin wafer 7.

Scrub cleaning using the scrub cleaning apparatus of the present invention shown in FIGS. 4A to 4B in which three nozzles (liquid injection members) 16 are incorporated as wafer plane maintaining means (liquid injection method) will be described.
(When scrub cleaning target is a 300μm thick wafer)
First, a glass wafer 12 having a diameter of 200 mm and a thickness of 300 μm was set on the support member 13. Then, after the rotation speed of the wafer 12 is set to 50 rpm and the rotation speed of the roll brush 14 is set to 200 rpm, the roll brush 14 is injected while injecting 1 L (liter) of ultrapure water from the upper part of the wafer 12 into the vicinity of the center of the wafer 12. Was brought into contact with the surface of the wafer 12 and the brush holding member 50 holding the roll brush 14 was rotated to swing the roll brush 14. At this time, when the state of the wafer 12 is observed from the horizontal direction, it is confirmed that the wafer 12 is almost flat and is in contact with the wafer 12 no matter where the oscillating roll brush 14 moves. It was.

  Next, after separating the roll brush 14 from the surface of the wafer 12, injection of ultrapure water injected from the upper part of the wafer 12 was stopped, and the rotation speed of the wafer 12 was increased to 1500 rpm and spin drying was performed for 120 seconds.

  As a result of measuring the contact angle in the radial direction from the center of the wafer 12 removed from the support member 13 at intervals of about 20 mm, the contact angle was 5 degrees or less at all measurement points.

From this result, when the scrub cleaning target is a wafer having a thickness of 300 μm, the wafer 12 is maintained in a planar state without operating the nozzle (liquid ejecting member) as the wafer plane maintaining means (liquid ejecting method). This shows that the entire surface has been scrubbed.
(When scrub cleaning target is 200μm thick thin wafer)
Next, a glass wafer 12 having a diameter of 200 mm and a thickness of 200 μm was set on the support member 13. Then, after the rotational speed of the ultrathin wafer 12 is set to 50 rpm and the rotational speed of the roll brush 14 is set to 200 rpm, 1 L (liter) of ultrapure water per minute from the top of the ultrathin wafer 12 is near the center of the ultrathin wafer 12. The roll brush 14 was brought into contact with the surface of the wafer 12 while being poured into the wafer, and the brush holding member 50 holding the roll brush 14 was rotated to swing the roll brush 14. At this time, when the state of the ultrathin wafer 12 is observed from the horizontal direction, the central portion of the ultrathin wafer 12 is recessed by about 2 mm, and the roll brush 14 is in contact with the central portion of the ultrathin wafer 12 when moving. Not confirmed.

  Next, after separating the roll brush 14 from the surface of the ultrathin wafer 12, injection of ultrapure water injected from the top of the ultrathin wafer 12 is stopped, and the rotation speed of the ultrathin wafer 12 is increased to 1500 rpm and spinned for 120 seconds. Drying was performed.

  And as a result of measuring the contact angle about 20 mm in the radial direction from the center of the ultrathin wafer 12 removed from the support member 13, the contact angle is 30 degrees or more at a measurement point within 60 mm from the center, As a result, the contact angle at the measurement point in the periphery was 5 degrees or less. Therefore, it was confirmed that the scrubbing was not performed near the center of the ultrathin wafer 12.

  Therefore, the rotation speed of the ultra-thin wafer 12 is set to 50 rpm, the rotation speed of the roll brush 14 is set to 200 rpm, and 1 L (liter) of ultrapure water is injected from the top of the ultra-thin wafer 12 into the vicinity of the center of the ultra-thin wafer 12. Then, after oscillating the roll brush 14 and bringing it into contact with the surface of the ultrathin wafer 12, while observing from the horizontal direction, the wafer so that the oscillating roll brush 14 contacts the wafer 12 no matter where it moves. Scrub cleaning was similarly performed by adjusting the amount of water from three nozzles (liquid ejecting members) as a plane maintaining means (liquid ejecting method).

  As a result of measuring the contact angle at intervals of about 20 mm in the radial direction from the center of the ultrathin wafer 12 removed from the support member 13, the contact angle was 5 degrees or less at all measurement points.

From this result, when the scrub cleaning target is an ultra-thin wafer having a thickness of 200 μm, the planar state of the ultra-thin wafer 12 is maintained by operating a nozzle (liquid ejecting member) as wafer plane maintaining means (liquid ejecting method). This shows that the entire surface of the ultrathin wafer 12 has been scrubbed for the first time.
(When scrub cleaning target is 100μm thick thin wafer)
Finally, a glass wafer 12 having a diameter of 200 mm and a thickness of 100 μm was set on the support member 13. Then, after the rotational speed of the ultrathin wafer 12 is set to 50 rpm and the rotational speed of the roll brush 14 is set to 200 rpm, 1 L (liter) of ultrapure water per minute from the top of the ultrathin wafer 12 is near the center of the ultrathin wafer 12. The roll brush 14 was brought into contact with the surface of the wafer 12 while being poured into the wafer, and the brush holding member 50 holding the roll brush 14 was rotated to swing the roll brush 14. At this time, when the state of the ultrathin wafer 12 is observed from the horizontal direction, the central portion of the ultrathin wafer 12 is recessed by about 5 mm, and the roll brush 14 is in contact with the central portion of the ultrathin wafer 12 when moving. Not confirmed.

  Next, after separating the roll brush 14 from the surface of the ultrathin wafer 12, injection of ultrapure water injected from the top of the ultrathin wafer 12 is stopped, and the rotation speed of the ultrathin wafer 12 is increased to 1500 rpm and spinned for 120 seconds. Drying was performed.

  And as a result of measuring the contact angle about 20 mm in the radial direction from the center of the ultrathin wafer 12 removed from the support member 13, the contact angle is 30 degrees or more at a measurement point within 80 mm from the center, As a result, the contact angle at the measurement point in the periphery was 5 degrees or less. Therefore, it was confirmed that the scrubbing was not performed near the center of the ultrathin wafer 12.

  Therefore, the rotation speed of the ultra-thin wafer 12 is set to 50 rpm, the rotation speed of the roll brush 14 is set to 200 rpm, and 1 L (liter) of ultrapure water is injected from the top of the ultra-thin wafer 12 into the vicinity of the center of the ultra-thin wafer 12. While oscillating the roll brush 14 and bringing it into contact with the surface of the ultrathin wafer 12, while observing from the horizontal direction, the oscillating roll brush 14 contacts the wafer 12 no matter where it moves. As a wafer plane maintaining means (liquid ejecting method), the amount of water was adjusted from three nozzles (liquid ejecting members), and scrub cleaning was performed in the same manner.

  As a result of measuring the contact angle at intervals of about 20 mm in the radial direction from the center of the ultrathin wafer 12 removed from the support member 13, the contact angle was 5 degrees or less at all measurement points.

  From this result, when the object to be scrub cleaned is an ultra-thin wafer having a thickness of 100 μm, the nozzle (liquid ejecting member) is operated as a wafer plane maintaining means (liquid ejecting method) as in the case of an ultra-thin wafer having a thickness of 200 μm. This shows that the entire surface of the ultrathin wafer 12 can be scrubbed for the first time by maintaining the flat state of the ultrathin wafer 12.

Scrub cleaning using the scrub cleaning apparatus according to the present invention shown in FIGS. 5A to 5B in which a gas injection member 25 as a wafer plane maintaining means (gas injection method) is incorporated will be described.
(When scrub cleaning target is a 300μm thick wafer)
First, a glass wafer 21 having a diameter of 200 mm and a thickness of 300 μm was set on the support member 24. Then, after the rotation speed of the wafer 21 is set to 50 rpm and the rotation speed of the roll brush 22 is set to 200 rpm, 1 L (liter) of ultrapure water per minute is injected from the upper part of the wafer 21 into the vicinity of the center of the wafer 21. The brush 22 was brought into contact with the surface of the wafer 21. At this time, when the state of the wafer 21 was observed from the horizontal direction, it was confirmed that the wafer 21 was kept almost flat and the entire roll brush 22 was in contact with the wafer 21.

  Next, after separating the roll brush 22 from the surface of the wafer 21, injection of ultrapure water injected from the upper part of the wafer 21 was stopped, and the rotation speed of the wafer 21 was increased to 1500 rpm and spin drying was performed for 120 seconds.

  Then, as a result of measuring the contact angle about every 20 mm in the radial direction from the center of the wafer 21 removed from the support member 24, the contact angle was 5 degrees or less at all measurement points.

From this result, when the scrub cleaning target is a wafer having a thickness of 300 μm, the wafer 21 is kept flat without operating the gas injection member 25 as the wafer plane maintaining means (gas injection method). Indicates that scrub cleaning was possible.
(When scrub cleaning target is 200μm thick thin wafer)
Next, a glass wafer 21 having a diameter of 200 mm and a thickness of 200 μm was set on the support member 24. Then, after the rotational speed of the ultra-thin wafer 21 is 50 rpm and the rotational speed of the roll brush 22 is 200 rpm, 1 L (liter) of ultrapure water per minute from the top of the ultra-thin wafer 21 is near the center of the ultra-thin wafer 21. The roll brush 22 was brought into contact with the surface of the ultrathin wafer 21 while being injected into the wafer. At this time, when the state of the ultrathin wafer 21 is observed from the horizontal direction, it is confirmed that the central portion of the ultrathin wafer 21 is recessed by about 2 mm, and the roll brush 22 is not in contact with the central portion of the ultrathin wafer 21. It was.

  Next, after separating the roll brush 22 from the surface of the ultrathin wafer 21, the injection of ultrapure water injected from the top of the ultrathin wafer 21 is stopped, and the number of revolutions of the ultrathin wafer 21 is increased to 1500 rpm and spinned for 120 seconds. Drying was performed.

  And as a result of measuring the contact angle about 20 mm in the radial direction from the center of the ultra-thin wafer 21 removed from the support member 24, the contact angle is 30 degrees or more at a measurement point within 60 mm from the center, As a result, the contact angle at the measurement point in the periphery was 5 degrees or less. Therefore, it was confirmed that scrub cleaning was not performed near the center of the ultrathin wafer 21.

  Therefore, the rotation speed of the ultrathin wafer 21 is set to 50 rpm, the rotation speed of the roll brush 22 is set to 200 rpm, and 1 L (liter) of ultrapure water is injected from the top of the ultrathin wafer 21 to the vicinity of the center of the ultrathin wafer 21. While the roll brush 22 is brought into contact with the surface of the ultrathin wafer 21 while observing from the horizontal direction, nitrogen gas is ejected from the gas ejection member 25 as a wafer plane maintaining means (gas ejection method) and the ultrathin wafer 21 is The nitrogen gas flow rate was adjusted so that the entire surface was in contact with the roll brush 22, and scrub cleaning was performed in the same manner.

  Then, as a result of measuring the contact angle about every 20 mm in the radial direction from the center of the ultrathin wafer 21 removed from the support member 24, the contact angle was 5 degrees or less at all measurement points.

From this result, when the object to be scrub cleaned is an ultra-thin wafer having a thickness of 200 μm, the plane state of the ultra-thin wafer 21 is maintained by operating the gas injection member 25 as a wafer plane maintaining means (gas injection method). This shows that the entire surface of the ultra-thin wafer 21 has been scrubbed for the first time.
(When scrub cleaning target is 100μm thick thin wafer)
Finally, a glass wafer 21 having a diameter of 200 mm and a thickness of 100 μm was set on the support member 24. Then, after the rotation speed of the ultrathin wafer 21 is 50 rpm and the rotation speed of the roll brush 22 is 200 rpm, 1 L (liter) of ultrapure water per minute from the top of the ultrathin wafer 21 is near the center of the ultrathin wafer 21. The roll brush 22 was brought into contact with the surface of the ultrathin wafer 21 while being injected into the wafer. At this time, when the state of the ultrathin wafer 21 is observed from the horizontal direction, it is confirmed that the central portion of the ultrathin wafer 21 is recessed by about 5 mm and the roll brush 22 is not in contact with the central portion of the ultrathin wafer 21. It was.

  Next, after separating the roll brush 22 from the surface of the ultrathin wafer 21, the injection of ultrapure water injected from the top of the ultrathin wafer 21 is stopped, and the number of revolutions of the ultrathin wafer 21 is increased to 1500 rpm and spinned for 120 seconds. Drying was performed.

  And as a result of measuring the contact angle at intervals of about 20 mm in the radial direction from the center of the ultrathin wafer 21 removed from the support member 24, the contact angle is 30 degrees or more at a measurement point within 80 mm from the center, As a result, the contact angle at the measurement point in the periphery was 5 degrees or less. Therefore, it was confirmed that scrub cleaning was not performed near the center of the ultrathin wafer 21.

  Therefore, the rotation speed of the ultrathin wafer 21 is set to 50 rpm, the rotation speed of the roll brush 22 is set to 200 rpm, and 1 L (liter) of ultrapure water is injected from the top of the ultrathin wafer 21 to the vicinity of the center of the ultrathin wafer 21. While the roll brush 22 is brought into contact with the surface of the ultrathin wafer 21 while observing from the horizontal direction, nitrogen gas is ejected from the gas ejection member 25 as a wafer plane maintaining means (gas ejection method) and the ultrathin wafer 21 is The nitrogen gas flow rate was adjusted so that the entire surface was in contact with the roll brush 22, and scrub cleaning was performed in the same manner.

  Then, as a result of measuring the contact angle about every 20 mm in the radial direction from the center of the ultrathin wafer 21 removed from the support member 24, the contact angle was 5 degrees or less at all measurement points.

  From this result, when the object to be cleaned is an ultra-thin wafer having a thickness of 100 μm, the gas injection member 25 as a wafer plane maintaining means (gas injection method) is operated as in the case of an ultra-thin wafer having a thickness of 200 μm. This shows that the entire surface of the ultrathin wafer 21 can be scrubbed for the first time by maintaining the planar state of the ultrathin wafer 21.

Scrub cleaning using the scrub cleaning apparatus according to the present invention shown in FIGS. 6A to 6B in which a gas injection member 30 as a wafer plane maintaining means (gas injection method) is incorporated will be described.
(When scrub cleaning target is a 300μm thick wafer)
First, a glass wafer 26 having a diameter of 200 mm and a thickness of 300 μm was set on the support member 27. Then, after the rotation speed of the wafer 26 is set to 50 rpm and the rotation speed of the roll brush 28 is set to 200 rpm, 1 L (liter) of ultrapure water per minute is injected from the upper part of the wafer 26 into the vicinity of the center of the wafer 26. Was brought into contact with the surface of the wafer 26, and the brush holding member 51 holding the roll brush 28 was rotated to swing the roll brush 28. At this time, when the state of the wafer 26 is observed from the horizontal direction, it is confirmed that the wafer 26 is maintained in a substantially flat state and is in contact with the wafer 26 no matter where the oscillating roll brush 28 moves. It was.

  Next, after the roll brush 28 was separated from the surface of the wafer 26, injection of ultrapure water injected from the upper part of the wafer 26 was stopped, and the rotation speed of the wafer 26 was increased to 1500 rpm and spin drying was performed for 120 seconds.

  And as a result of measuring the contact angle about every 20 mm in the radial direction from the center of the wafer 26 removed from the support member 27, the contact angle was 5 degrees or less at all measurement points.

From this result, when the scrub cleaning target is a wafer having a thickness of 300 μm, the wafer 26 is kept flat without operating the gas injection member 30 as the wafer plane maintaining means (gas injection method). Indicates that scrub cleaning was possible.
(When scrub cleaning target is 200μm thick thin wafer)
Next, a glass wafer 26 having a diameter of 200 mm and a thickness of 200 μm was set on the support member 27. Then, after the rotational speed of the ultrathin wafer 26 is set to 50 rpm and the rotational speed of the roll brush 28 is set to 200 rpm, 1 L (liter) of ultrapure water per minute from the top of the ultrathin wafer 26 is near the center of the ultrathin wafer 26. The roll brush 28 was brought into contact with the surface of the wafer 26 while being poured into the wafer, and the brush holding material 51 holding the roll brush 28 was rotated to swing the roll brush 28. At this time, when the state of the ultrathin wafer 26 is observed from the horizontal direction, the central portion of the ultrathin wafer 26 is recessed by about 2 mm, and the roll brush 28 is in contact with the central portion of the ultrathin wafer 26 when it moves. Not confirmed.

  Next, after separating the roll brush 28 from the surface of the ultrathin wafer 26, the injection of ultrapure water injected from the top of the ultrathin wafer 26 is stopped, and the rotation speed of the ultrathin wafer 26 is increased to 1500 rpm and spinned for 120 seconds. Drying was performed.

  And as a result of measuring the contact angle at intervals of about 20 mm in the radial direction from the center of the ultrathin wafer 26 removed from the support member 27, the contact angle is 30 degrees or more at a measurement point within 60 mm from the center, As a result, the contact angle at the measurement point in the periphery was 5 degrees or less. Therefore, it was confirmed that the scrub cleaning was not performed near the center of the ultrathin wafer 26.

  Therefore, the rotation speed of the ultra-thin wafer 26 is set to 50 rpm, the rotation speed of the roll brush 28 is set to 200 rpm, and 1 L (liter) of ultrapure water is injected from the top of the ultra-thin wafer 26 near the center of the ultra-thin wafer 26. While oscillating the roll brush 28 and bringing it into contact with the surface of the ultrathin wafer 26, while observing from the horizontal direction, nitrogen gas is jetted from the gas jetting member 30 as a wafer plane maintaining means (gas jetting method), and The scrub cleaning was performed in the same manner by adjusting the flow rate of nitrogen gas so that the oscillating roll brush 28 would contact the wafer 26 no matter where it moved.

  As a result of measuring the contact angle about every 20 mm in the radial direction from the center of the ultra-thin wafer 26 removed from the support member 27, the contact angle was 5 degrees or less at all measurement points.

From this result, when the object to be scrubbed is an ultra-thin wafer having a thickness of 200 μm, it is the first time that the plane state of the ultra-thin wafer 26 is maintained by operating the gas injection member 30 as a wafer plane maintaining means (gas injection method). This shows that the entire surface of the ultrathin wafer 26 has been scrubbed.
(When scrub cleaning target is 100μm thick thin wafer)
Finally, a glass wafer 26 having a diameter of 200 mm and a thickness of 100 μm was set on the support member 27. Then, after the rotational speed of the ultrathin wafer 26 is set to 50 rpm and the rotational speed of the roll brush 28 is set to 200 rpm, 1 L (liter) of ultrapure water per minute from the top of the ultrathin wafer 26 is near the center of the ultrathin wafer 26. The roll brush 28 was brought into contact with the surface of the wafer 26 while being poured into the wafer, and the brush holding material 51 holding the roll brush 28 was rotated to swing the roll brush 28. At this time, when the state of the ultrathin wafer 26 is observed from the horizontal direction, the central portion of the ultrathin wafer 26 is recessed by about 5 mm, and the roll brush 28 is in contact with the central portion of the ultrathin wafer 26 when moving. Not confirmed.

  Next, after separating the roll brush 28 from the surface of the ultrathin wafer 26, the injection of ultrapure water injected from the top of the ultrathin wafer 26 is stopped, and the rotation speed of the ultrathin wafer 26 is increased to 1500 rpm and spinned for 120 seconds. Drying was performed.

  And, as a result of measuring the contact angle about 20 mm in the radial direction from the center of the ultra-thin wafer 26 removed from the support member 27, the contact angle is 30 degrees or more at a measurement point within 80 mm from the center, As a result, the contact angle at the measurement point in the periphery was 5 degrees or less. Therefore, it was confirmed that the scrub cleaning was not performed near the center of the ultrathin wafer 26.

  Therefore, the rotation speed of the ultra-thin wafer 26 is set to 50 rpm, the rotation speed of the roll brush 28 is set to 200 rpm, and 1 L (liter) of ultrapure water is injected from the top of the ultra-thin wafer 26 near the center of the ultra-thin wafer 26. While oscillating the roll brush 28 and bringing it into contact with the surface of the ultrathin wafer 26, while observing from the horizontal direction, nitrogen gas is jetted from the gas jetting member 30 as a wafer plane maintaining means (gas jetting method), and The scrub cleaning was performed in the same manner by adjusting the flow rate of nitrogen gas so that the oscillating roll brush 28 would contact the wafer 26 no matter where it moved.

  As a result of measuring the contact angle about every 20 mm in the radial direction from the center of the ultra-thin wafer 26 removed from the support member 27, the contact angle was 5 degrees or less at all measurement points.

  From this result, when the object to be cleaned is a very thin wafer having a thickness of 100 μm, the gas injection member 30 as a wafer plane maintaining means (gas injection method) is operated as in the case of the extremely thin wafer having a thickness of 200 μm. This shows that the entire surface of the ultrathin wafer 26 can be scrubbed for the first time by maintaining the planar state of the ultrathin wafer 26.

  According to the scrub cleaning apparatus according to the present invention, the planar state of the wafer surface is maintained by the action of the wafer plane maintaining means even during the scrub cleaning in which the cleaning liquid tends to accumulate in the center of the wafer. Occurrence of the non-contact area is suppressed and good scrub cleaning can be performed stably. For this reason, it has industrial applicability used for scrub cleaning of a large positive thin substrate (wafer) of a UV-IR cut filter mounted on a small and thin digital camera, a camera-equipped mobile phone or the like. .

DESCRIPTION OF SYMBOLS 1 Wafer 2 Roll brush 3 Cleaning liquid 4 Wafer 5 Roll brush 6 Cleaning liquid 7 Wafer 8 Support member 9 Roll brush 10 Cleaning liquid 11 Nozzle (liquid injection member)
12 Wafer 13 Support Member 14 Roll Brush 15 Cleaning Liquid 16 Nozzle (Liquid Injection Member)
DESCRIPTION OF SYMBOLS 21 Wafer 22 Roll brush 23 Cleaning liquid 24 Support member 25 Gas injection member 26 Wafer 27 Support member 28 Roll brush 29 Cleaning liquid 30 Gas injection member 50 Brush holding material 51 Brush holding material

Claims (4)

A support member that holds the outer peripheral edge of the wafer and rotatably supports the wafer in a horizontal state; a drive unit that rotates the support member at a predetermined number of rotations; and a wafer disposed on the wafer surface and with respect to the wafer surface In a scrub cleaning apparatus that includes a roll brush having a rotation axis that is parallel or perpendicular to the wafer and a supply unit that supplies the cleaning liquid to the wafer surface, and that frictionally cleans the wafer surface with the cleaning liquid and the roll brush.
A scrub cleaning apparatus, comprising a wafer plane maintaining means for spraying fluid toward the back side of the wafer to maintain a planar state of the wafer surface.   2. The scrub cleaning apparatus according to claim 1, wherein the wafer plane maintaining means is constituted by a liquid ejecting member that ejects liquid to at least one place on the wafer rear surface side.   2. The scrub cleaning apparatus according to claim 1, wherein the wafer plane maintaining means is constituted by a gas injection member for injecting gas to at least one place on the wafer rear surface side.   2. The scrub cleaning apparatus according to claim 1, wherein the wafer is an ultrathin wafer having a diameter of 200 mm or more and a thickness of 200 [mu] m or less selected from glass, quartz, ceramics, and a crystal material.

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