JP2010258320A - Wiring board and manufacturing method thereof - Google Patents

Abstract

An object of the present invention is to provide a wiring board that meets the demand for improving electrical reliability.
A wiring board according to an embodiment of the present invention includes an insulating layer, a plurality of conductive layers located on the insulating layer and spaced apart from each other, and a ceramic structure located between adjacent conductive layers. And a resin layer 10 formed on the insulating layer so as to cover the conductive layer 11 and the ceramic structure 8. According to another aspect of the present invention, there is provided a method of manufacturing a wiring substrate, comprising: preparing an insulating layer having a conductive layer 11 formed on an upper surface; and applying a ceramic sol containing ceramic particles and a solvent on the upper surface of the insulating layer. And a step of forming a ceramic structure 13 having ceramic particles by drying the solvent, and a step of forming the resin layer 10 on the upper surface of the insulating layer.
[Selection] Figure 2

Description

  The present invention relates to a wiring board used for an electronic device (for example, various audiovisual devices, home appliances, communication devices, computer devices, and peripheral devices thereof) and a manufacturing method thereof.

  2. Description of the Related Art Conventionally, as a mounting structure in an electronic device, an electronic component mounted on a wiring board is used.

  Patent Document 1 describes a wiring board including a plurality of resin layers and a plurality of conductive layers located between the resin layers and spaced apart from each other.

  The resin layer covering the conductive layer is relatively weak against moisture and has a property that moisture easily enters the inside. For this reason, when the wiring board is used in a high humidity environment, the resin layer contains a large amount of moisture. In this case, when an electric field is applied between adjacent conductive layers, the conductive material contained in the conductive layer is ionized due to moisture contained in the resin layer, so that a part of the conductive layer extends toward the resin layer. (Ion migration). As a result, adjacent conductive layers are easily short-circuited, and the electrical reliability of the wiring board is likely to be reduced.

JP-A-8-116174

  The present invention provides a wiring board that meets the demand for improving electrical reliability.

  A wiring board according to an embodiment of the present invention includes an insulating layer, a plurality of conductive layers positioned on the insulating layer and spaced apart from each other, a ceramic structure positioned between the adjacent conductive layers, and the conductive layer And a resin layer formed on the insulating layer so as to cover the ceramic structure.

  A method of manufacturing a wiring board according to an aspect of the present invention includes a step of preparing an insulating layer having a conductive layer formed on an upper surface, and a step of applying a ceramic sol containing ceramic particles and a solvent to the upper surface of the insulating layer. And a step of forming a ceramic structure having the ceramic particles by drying the solvent, and a step of forming a resin layer on the upper surface of the insulating layer.

  According to the wiring board according to one embodiment of the present invention, short-circuit between adjacent conductive layers can be reduced. As a result, a wiring board having excellent electrical reliability can be obtained.

It is sectional drawing of the mounting structure concerning 1st Embodiment of this invention. It is an enlarged view of R part of the mounting structure shown in FIG. 3a, 3b, and 3c are cross-sectional views illustrating a manufacturing process of the mounting structure shown in FIG. It is an enlarged view explaining the manufacturing process in R part of the mounting structure shown in FIG. It is an enlarged view explaining the manufacturing process in R part of the mounting structure shown in FIG. It is sectional drawing explaining the manufacturing process of the mounting structure shown in FIG. It is an enlarged view explaining the manufacturing process in R part of the mounting structure shown in FIG. 8a and 8b are cross-sectional views illustrating a manufacturing process of the mounting structure shown in FIG. It is a partial expanded sectional view of the mounting structure concerning a 2nd embodiment of the present invention.

(First embodiment)
Hereinafter, a mounting structure including a wiring board according to a first embodiment of the present invention will be described in detail based on the drawings.

  The mounting structure 1 shown in FIG. 1 is used for electronic devices such as various audiovisual devices, home appliances, communication devices, computer devices, and peripheral devices thereof. The mounting structure 1 includes an electronic component 2 and a wiring board 3.

  The electronic component 2 is a semiconductor element such as an IC or LSI, and is flip-chip mounted on the wiring substrate 3 via conductive bumps 4 such as solder. The base material of the electronic component 2 is formed of a semiconductor material such as silicon, germanium, gallium arsenide, gallium arsenide phosphorus, gallium nitride, or silicon carbide. As the electronic component 2, for example, one having a thickness of 0.1 mm to 1 mm can be used.

  The wiring substrate 3 includes a core substrate 5 and a pair of wiring layers 6 formed on both sides of the core substrate 5.

  The core substrate 5 is intended to increase the strength of the wiring substrate 3 while achieving conduction between the pair of wiring layers 6 and has a thickness of, for example, 0.3 mm to 1.5 mm. The core substrate 5 includes a base body 7, a through hole T, a through hole conductor 8, and an insulator 9.

  The substrate 7 is formed of, for example, a resin. Examples of the resin include an epoxy resin, a bismaleimide triazine resin, a cyanate resin, a polyparaphenylene benzbisoxazole resin, a wholly aromatic polyamide resin, a polyimide resin, an aromatic liquid crystal polyester resin, a poly Ether ether ketone resin or polyether ketone resin can be used.

  Further, the base body 7 may include a base material coated with a resin. As the base material, a woven fabric or a non-woven fabric composed of fibers or a fiber in which fibers are arranged in one direction can be used. As the fiber, for example, glass fiber, resin fiber, carbon fiber or metal fiber can be used. The coefficient of thermal expansion of the substrate 7 is set to, for example, 1 ppm / ° C. or more and 16 ppm / ° C. or less. Such a coefficient of thermal expansion conforms to ISO11359-2: 1999.

  The base body 7 is provided with a plurality of through holes T penetrating the base body 7 in the thickness direction (Z direction). The through hole T is formed in a cylindrical shape having a diameter of 0.1 mm or more and 1 mm or less, for example, and the through hole conductor 8 is formed therein.

  The through-hole conductor 8 is for electrically connecting the upper and lower wiring layers 6 of the core substrate 5 and is formed in a cylindrical shape along the inner wall of the through-hole T. As this through-hole conductor 8, for example, a conductor formed of a conductive material such as copper, silver, gold, aluminum, nickel, or chromium can be used. The coefficient of thermal expansion of the through-hole conductor 8 is set to, for example, 14 ppm / ° C. or more and 18 ppm / ° C. or less.

  The insulator 9 is formed in a columnar shape, and the end surface of the insulator 9 and the end surface of the through-hole conductor 8 form a support surface for a via conductor 12 described later. As the insulator 9, what was formed with resin materials, such as a polyimide resin, an acrylic resin, an epoxy resin, cyanate resin, a fluororesin, a silicon resin, a polyphenylene ether resin, or a bismaleimide triazine resin, can be used, for example.

  On the other hand, a pair of wiring layers 6 are formed on both sides of the core substrate 5 as described above. The wiring layer 6 includes a plurality of resin layers 10, a conductive layer 11 formed on the substrate 7 or between the resin layers 10 or on the resin layer 10, a plurality of via holes V penetrating the resin layer 10, and via holes V And via conductors 12 formed inside. The conductive layer 11 and the via conductor 12 are electrically connected to each other and constitute a wiring part. The wiring portion includes a ground wiring, a power supply wiring, and / or a signal wiring.

  The plurality of resin layers 10 not only function as a support member that supports the conductive layer 11 but also function as an insulating member that prevents a short circuit between the conductive layers 11 so that the thickness is, for example, 1 μm or more and 15 μm or less. Is formed.

  In the present embodiment, the plurality of resin layers 10 include a first resin layer 10a and a second resin layer 10b that is bonded to the base by the first resin layer 10a.

  The first resin layer 10 a is interposed between the second resin layer 10 b and the core substrate 5, and adheres the second resin layer 10 b and the core substrate 5. As this 1st resin layer 10a, what was formed from thermosetting resins, such as a polyimide resin, an acrylic resin, an epoxy resin, a urethane resin, cyanate resin, a silicon resin, or a bismaleimide triazine resin, can be used, for example. The coefficient of thermal expansion of the first resin layer 10a is set to, for example, 16 ppm / ° C. or more and 40 ppm / ° C. or less.

  The second resin layer 10b supports the conductive layer 11, does not include a base material, and includes a low thermal expansion resin, thereby reducing the difference in thermal expansion coefficient between the wiring board 2 and the electronic component 3. Yes. As this 2nd resin layer 10b, it is desirable to use what was formed from resin of low thermal expansion, such as liquid crystal polymer, polybenzoxazole resin, polyimide benzoxazole resin, polyimide resin, or polyetheretherketone resin, for example. In addition, the thermal expansion coefficient of the 2nd resin layer 10b is set to -10 ppm / degrees C or more and 5 ppm / degrees C or less, for example.

  The resin layer 10 desirably contains a filler. As the filler material, a material having a thermal expansion coefficient of −5 ppm / ° C. or more and 5 ppm / ° C. or less, for example, silicon oxide, silicon carbide, aluminum oxide, aluminum nitride, or aluminum hydroxide can be used. The particle diameter of the filler is set to, for example, 0.5 μm or more and 15 μm or less.

  The plurality of conductive layers 11 are arranged on the base 7 and the second resin layer 10b with a gap therebetween, and the surfaces thereof are covered with the first resin layer 10a. As the conductive layer 11, for example, a layer formed of a metal material such as copper, silver, gold, aluminum, nickel, or chromium can be used. The thickness of the conductive layer 11 is set to 3 μm or more and 20 μm or less. The thermal expansion coefficient of the conductive layer 11 is set to, for example, 14 ppm / ° C. or more and 18 ppm / ° C. or less.

  On the other hand, the via conductor 12 electrically connected to the conductive layer 11 connects the conductive layers 11 separated in the thickness direction of the first resin layer 10 a to each other, and is narrow toward the core substrate 5. Is formed. As the via conductor 12, for example, a conductor formed of a conductive material such as copper, silver, gold, aluminum, nickel, or chromium can be used. The thermal expansion coefficient of the via conductor is set to, for example, 14 ppm / ° C. or more and 18 ppm / ° C. or less.

  As shown in FIG. 2, in the mounting structure 1 of the first embodiment, the ceramic structure 13 is formed between the conductive layers 11 adjacent on the same second resin layer 10b.

  The ceramic structure 13 has, for example, a plurality of ceramic particles bonded to each other, and the inside is densely formed by bonding the particles to each other.

  Since the ceramic structure 13 is made of a low molecular weight ceramic compared to the resin and has a property that moisture hardly penetrates, the conductive layer 11 is caused by moisture in the first resin layer 10a. Thus, even if ion migration occurs and a part of the conductive layer 11 tries to expand toward the adjacent conductive layer 11, the expansion is satisfactorily suppressed by the ceramic structure 13. As a result, the short circuit between the adjacent conductive layers 11 can be reduced, and the electrical reliability of the wiring board 3 can be improved. Further, by reducing the short circuit between the adjacent conductive layers 11, the adjacent conductive layers 11 can be brought close to each other, and the wiring board 3 can be reduced in size.

  The ceramic particles are preferably spherical. As a result, by densifying the internal structure of the ceramic structure 13, the possibility that the conductive layer 11 extends in the ceramic structure 13 can be reduced, and the mechanical strength of the ceramic structure 13 can be improved. . The particle diameter of the ceramic particles is preferably set to 3 nm or more and 50 nm or less.

  Moreover, it is desirable that the ceramic particles are bonded to a filler contained in the first resin layer 10a or the second resin layer 10b. As a result, the adhesive strength between the ceramic structure 13 and the first resin layer 10a or the second resin layer 10b can be improved.

  The ceramic structure 13 is preferably located at the interface between the first resin layer 10a and the second resin layer 10b. As a result, the elongation of the conductive layer 11 can be reduced at the interface where a gap is formed where the conductive layer 11 is easily elongated.

  The ceramic structure 13 is preferably formed along the longitudinal direction (Y direction) of the conductive layer 11. As a result, the migration growth suppressing effect can be further improved.

  The ceramic structure 13 is preferably in contact with the side surface of the conductive layer 11. As a result, it is possible to reduce the elongation of the conductive layer 11 from the side surface of the conductive layer 11 with which the ceramic structure 13 is in contact. The ceramic structure 13 is preferably formed from the lower end to the upper end of the side surface of the conductive layer 11.

  The ceramic structure 13 is preferably continuously applied from the side surface of the conductive layer 11 to the upper surface of the second resin layer 10b. As a result, the ceramic structure 13 can be deposited on the side surface of the conductive layer 11 and can be positioned at the interface between the first resin layer 10a and the second resin layer 10b. In addition, a gap is easily generated between the side surface of the conductive layer 11 and the upper surface of the second resin layer 10b. However, the gap can be reduced by the ceramic structure 13, and the extension of the conductive layer 11 due to the gap is prevented. Can be reduced. Moreover, the ceramic structure 13 can increase the adhesive strength between the conductive layer 11 and the second resin layer 10b.

  Further, the ceramic structure 13 preferably has a concave curved surface between the side surface of the conductive layer 11 and the upper surface of the second resin layer 10b. As a result, the ceramic structure 13 can be efficiently deposited on the side surface of the conductive layer 11 and positioned at the interface between the first resin layer 10a and the second resin layer 10b. Further, it is possible to improve the adhesion between the ceramic structure 13 and the first resin layer 10a and reduce the peeling.

  The ceramic structure 13 is desirably formed at least in a region where the distance between adjacent conductive layers 11 is the shortest. As a result, the short circuit between the conductive layers 11 can be reduced by forming the ceramic structure 13 in a region where the short circuit between the conductive layers 11 due to the elongation of the conductive layer 11 is likely to occur.

  As the ceramic structure 13, for example, one formed of a ceramic material such as silicon oxide, aluminum oxide, boron oxide, magnesium oxide, or calcium oxide can be used.

  Moreover, as for the ceramic structure 13, it is desirable for the coefficient of thermal expansion to be set to 1 ppm / ° C. or more and 15 ppm / ° C. or less. As a result, the thermal stress caused by the difference in thermal expansion coefficient between the first resin layer 10a and the conductive layer 11 can be relaxed. As the ceramic structure 13 having such a thermal expansion coefficient, one formed from a ceramic material such as silicon oxide, aluminum oxide, boron oxide, magnesium oxide or calcium oxide can be used.

  The ceramic structure 13 preferably has a dielectric loss tangent of 0.001 or more and 0.01 or less. As a result, the transmission characteristic of the high frequency signal in the conductive layer 11 can be improved. As such a dielectric loss tangent ceramic structure 13, one formed from a ceramic material such as silicon oxide, aluminum oxide, boron oxide, magnesium oxide or calcium oxide can be used. The dielectric loss tangent conforms to JISK6911: 1995.

  Thus, the mounting structure 1 described above exhibits a desired function by driving or controlling an electronic component based on a power supply or a signal supplied via the wiring board 3.

  Next, the manufacturing method of the mounting structure 1 mentioned above is demonstrated based on FIGS.

  (1) As shown in FIG. 3A, a core substrate 5 is prepared. Specifically, this is performed as follows.

  First, the base body 7 is prepared. The base body 7 can be produced, for example, by laminating a plurality of resin sheets including an uncured resin and a base material and curing the uncured resin by heating and pressing. The uncured state is an A-stage or B-stage according to ISO 472: 1999.

  Next, a plurality of through holes T penetrating the base body 7 in the thickness direction are formed. The through hole T can be formed by, for example, drilling or laser processing.

  Next, a conductive material is deposited on the inner wall of the through hole T to form a cylindrical through hole conductor 8. Further, a conductive material layer is formed by depositing a conductive material on the upper surface and the lower surface of the substrate 7. The conductive material is deposited by, for example, electroless plating, vapor deposition, CVD, or sputtering.

  Next, the inside of the cylindrical through-hole conductor 8 is filled with a resin material or the like to form an insulator 9.

  Next, after the conductive material is deposited on the exposed portion of the insulator 9, the conductive layer 11 is formed by patterning the conductive layer material layer. The conductive material is deposited by, for example, an electroless plating method, a vapor deposition method, a CVD method, or a sputtering method. The patterning of the conductive material layer 15x is performed using, for example, a conventionally known photolithography technique or etching.

  The core substrate 5 can be manufactured as described above.

  (2) As shown in FIG. 3 b, the resin layer 10 is formed on the conductive layer 11. In the resin layer 10, for example, the second resin layer 10b is disposed on the conductive layer 11 via the uncured first resin layer 10a, and the first resin layer 10a is cured by heating and pressurization using a heating press. Is formed.

  (3) As shown in FIG. 3 c, the via conductor 12 and the conductive layer 11 are formed in the resin layer 10. Specifically, this is performed as follows.

  First, a via hole V is formed in the resin layer 10, and at least a part of the conductive layer 11 is exposed in the via hole V. The via hole V can be formed by, for example, laser processing or photolithography. The via hole V can be formed so that the opening width becomes narrower toward the core substrate 5 by adjusting the output of the laser beam.

  Next, the via conductor 12 is formed in the via hole V, and the conductive layer 11 is formed on the upper surface of the resin layer 10. The via conductor 12 and the conductive layer 11 are formed by a conventionally known semi-additive method, subtractive method, full-additive method, or the like, and it is preferable that the via conductor 12 and the conductive layer 11 are formed by the semi-additive method.

  (4) As shown in FIGS. 4 and 5, the ceramic structure 13 is formed on the upper surface of the resin layer 10. Specifically, this is performed as follows.

  First, a ceramic sol containing ceramic particles and a solvent is prepared. Next, a ceramic sol is applied to the upper surface of the resin layer 10. Next, the ceramic sol is dried and the solvent is evaporated. As a result, the ceramic particles remain on the upper surface of the resin layer 10, and the ceramic structure 13 having the ceramic particles can be formed.

  The ceramic sol preferably contains 1% to 50% ceramic particles and 50% to 98% solvent. As a result, by containing 1% or more of ceramic particles, the internal structure of the ceramic structure 13 can be made dense and thick. Further, by containing 50% or more of the solvent, the viscosity of the ceramic sol can be reduced, the flatness of the upper surface of the ceramic structure 13 can be improved, and the flatness of the upper surface of the wiring board 2 can be improved.

  The ceramic particles are made of a ceramic material constituting the ceramic structure 13. The ceramic particles are preferably spherical. As a result, when the solvent is evaporated, the ceramic particles can be densely aggregated, so that the ceramic particles can be efficiently left on the upper surface of the resin layer 10.

  The particle diameter of the ceramic particles is preferably set to 3 nm or more and 50 nm or less. By setting the particle diameter of the ceramic particles to 3 nm or more, the viscosity of the ceramic sol can be reduced and the productivity can be improved. Further, by setting the particle diameter of the ceramic particles to 50 nm or less, the ceramic particles can be bonded to each other at a temperature lower than the thermal decomposition temperature of the resin contained in the resin layer 10 as described later.

  As the solvent, for example, a solvent containing an organic solvent such as methanol, isopropanol, methyl ethyl ketone, methyl isobutyl ketone, propylene glycol monomethyl ether or dimethylacetamide can be used. Among these, it is desirable to use one containing methanol or propylene glycol monomethyl ether. As a result, the ceramic sol can be uniformly applied and the solvent can be efficiently evaporated.

  The ceramic sol can be applied using, for example, a dispenser or screen printing. In addition, application | coating to a predetermined place can be performed by adjusting a coating amount, when using a dispenser, and using a mask when using screen printing. The application of the ceramic sol is desirably performed in a region other than the region where the via conductor 12 on the upper surface of the conductive layer 11 is connected. As a result, the ceramic structure 13 can be formed in a region other than the region where the via conductor 12 on the upper surface of the conductive layer 11 is connected.

  The ceramic sol can be dried in an inert gas such as nitrogen gas. Here, it is desirable to heat the ceramic structure 13 during or after drying the ceramic sol. As a result, the ceramic particles can be bonded to each other. Here, when the particle diameter of the ceramic particles is set to 50 nm or less, the ceramic particles can be bonded to each other by heating the ceramic structure 13 below the thermal decomposition temperature of the resin contained in the resin layer 10. . This is because the ceramic particles have a particle diameter of 50 nm or less, and the ceramic particles atoms, particularly the surface atoms, actively move, so that the ceramic particles bond even at such low temperatures. I guess that. By bonding the ceramic particles in this manner, the mechanical strength of the ceramic structure 13 can be improved while reducing damage to the resin contained in the resin layer 10 due to heating.

  Moreover, since the ceramic particles can be bonded at a low temperature, crystallization of the ceramic particles can be reduced and the proportion of the amorphous state can be increased. As a result, the ceramic particles can reduce the occurrence of cracks by reducing the anisotropy of the thermal expansion coefficient due to the crystal structure anisotropy. In particular, when silicon oxide is used as the ceramic material of the ceramic particles, crystallization of the ceramic particles can be effectively reduced. Further, since the heating is performed at a low temperature, the stress generated during heating due to the difference in thermal expansion between the ceramic particles and the resin layer 10 is reduced, and cracks and peeling due to the stress can be prevented.

  (5) As shown in FIGS. 6 and 7, the resin layer 10 is formed on the conductive layer 11. The resin layer 10 is formed in the same manner as the step (2).

  Here, in the step (4), when the ceramic structure 13 is continuously applied from the side surface of the conductive layer 11 to the upper surface of the second resin layer 10b, the side surface of the conductive layer 11 and the second resin layer Since the ceramic structure 13 is filled between the first resin layer 10b and the uncured first resin layer 10a on the second resin layer 10b, the gap between the side surface of the conductive layer 11 and the second resin layer 10b is set. It is possible to reduce gaps that occur without being filled with the uncured first resin layer 10a.

  In the step (4), when the ceramic structure 13 is continuously applied from the side surface of the conductive layer 11 to the upper surface of the second resin layer 10b, the conductive layer 11 and the second resin layer 10b Since the adhesive strength can be improved, when the uncured first resin layer 10a is disposed on the second resin layer 10b, the conductive layer 11 is reduced from peeling from the second resin layer 10b, and the peeled conductive The contact of the layer 11 with another conductive layer 11 can be reduced.

  (6) As shown in FIG. 8 a, the via conductor 12 and the conductive layer 11 are formed in the resin layer 10. The via conductor 12 and the conductive layer 11 are formed in the same manner as the step (3).

  When laser processing is used when forming the via hole V, a part of the ceramic structure 13 formed on the upper surface of the conductive layer 11 can be removed and the upper surface of the conductive layer 11 can be exposed in the via hole V. . When photolithography is used when forming the via hole V, the upper surface of the conductive layer 11 is formed by forming the ceramic structure 13 in the step (4) in a region other than the region where the via hole V is formed. The via hole V can be exposed.

  As described above, the wiring layer 6 can be formed on the core substrate 5, and the wiring substrate 3 can be manufactured. The wiring layer 6 can be further multilayered by repeating the steps (4) to (6).

  (7) As shown in FIG. 8 b, the electronic component 2 is flip-chip mounted on the wiring board 3 via the bumps 4.

  As described above, the mounting structure 1 can be manufactured.

(Second Embodiment)
Next, the mounting structure provided with the wiring board according to the second embodiment of the present invention will be described in detail with reference to FIG. In addition, description is abbreviate | omitted regarding the structure similar to 1st Embodiment mentioned above.

  Unlike the first embodiment, the second embodiment is formed so that the ceramic structures 13X connect adjacent conductive layers 11X. As a result, since the first resin layer 10Xa is not located between the adjacent conductive layers 11X in the region where the ceramic structure 13X is formed, a short circuit between the adjacent conductive layers 11X can be reduced.

The ceramic structure 13X is continuously applied from the upper surface of the conductive layer 11X to the upper surface of the second resin layer 10Xb through the side surface of the conductive layer 11X. As a result, when the resin layer 10X is formed on the conductive layer 11X, the ceramic structure 13X reduces the movement in the thickness direction of the conductive layer 11X, whereby the adhesive strength between the conductive layer 11X and the second resin layer 10Xb. Therefore, it is possible to reduce peeling of the conductive layer 11X from the second resin layer 10Xb, and to reduce contact of the peeled conductive layer 11X with another conductive layer 11X. The ceramic structure 13X is preferably attached to a region other than the region where the via conductors 12X on the upper surface of the conductive layer 11X are formed. The ceramic structure 13X is formed from the first region on the upper surface of the second resin layer 10Xb. It is desirable that the conductive layer 11X is continuously formed over the second region on the upper surface of the second resin layer 10Xb via the upper surface of the conductive layer 11X. Note that the first region and the second region are positioned symmetrically with respect to the conductive layer 11. As a result, the adhesive strength between the conductive layer 11X and the second resin layer 10Xb can be improved by reducing the movement of the conductive layer 11X.

  The ceramic structure 13X according to the second embodiment can be formed in the same manner as the ceramic structure 13 according to the first embodiment.

  The present invention is not limited to the above-described embodiments, and various modifications, improvements, combinations, and the like can be made without departing from the spirit of the present invention.

  For example, in the first and second embodiments described above, the configuration in which the ceramic structure is formed on the resin layer has been described as an example. However, the ceramic structure may be formed on the insulating layer. A structure may be formed. Further, the base body only needs to have insulating properties on the upper surface. For example, a base formed from a ceramic material may be used, or a base formed by coating a conductive material with an insulating material may be used.

DESCRIPTION OF SYMBOLS 1 Mounting structure 2 Electronic component 3 Wiring board 4 Bump 5 Core board 6 Wiring layer 7 Base body 8 Through-hole conductor
9 Insulator 10 Resin layer 11 Conductive layer 12 Via conductor 13 Ceramic structure T Through hole V Via hole

Claims (10)

An insulating layer;
A plurality of conductive layers positioned on the insulating layer and spaced apart from each other;
A ceramic structure located between adjacent conductive layers;
A wiring board comprising: a resin layer formed on the insulating layer so as to cover the conductive layer and the ceramic structure. The wiring board according to claim 1,
The wiring board according to claim 1, wherein the ceramic structure has a plurality of ceramic particles bonded to each other. The wiring board according to claim 1,
The wiring board according to claim 1, wherein the ceramic structure is located at an interface between the resin layer and the insulating layer. The wiring board according to claim 1,
The ceramic substrate is formed so as to connect the adjacent conductive layers to each other. The wiring board according to claim 1,
The wiring board according to claim 1, wherein the ceramic structure is formed along a longitudinal direction of the conductive layer. The wiring board according to claim 1,
The wiring board according to claim 1, wherein the ceramic structure is formed at least in a region where a distance between the adjacent conductive layers is shortest. The wiring board according to claim 1,
The ceramic substrate is in contact with a side surface of the conductive layer. The wiring board according to claim 6,
The wiring board according to claim 1, wherein the ceramic structure is continuously applied from a side surface of the conductive layer to an upper surface of the insulating layer. The wiring board according to claim 1;
An electronic component mounted on the wiring board and electrically connected to the conductive layer;
A mounting structure characterized by comprising: Preparing an insulating layer having a conductive layer formed on the upper surface;
Applying a ceramic sol containing ceramic particles and a solvent to the upper surface of the insulating layer;
Forming the ceramic structure having the ceramic particles by drying the solvent; and
Forming a resin layer on the upper surface of the insulating layer;
A method of manufacturing a wiring board, comprising:

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