JP2010258125A - Substrate processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of satisfactorily cleaning substrates, even in the atmosphere. <P>SOLUTION: A blocking plate 40 is arranged over a carrying path 30a and is brought very close to the upper surface of a substrate W, carried by each carrying roller 30. A plurality of hollow projecting parts 42 used as setting spaces for rinse agent supplying nozzles 60 are provided to the blocking plate 40. The plurality of rinse agent supplying nozzles 60 are fixed to hollow spaces 42a of the hollow projecting parts 42, along with an extension direction of the hollow projecting parts 42, and can be made to be brought very close to the carried substrate W. Shielding gas supply nozzles 50, 55 supply a shielding gas to a first processing space 71, to replace the shielding gas with air inside the first processing space 71. As a result of this, contacting of the substrate W, oxygen contained in atmosphere with the water in the rinse agent in the first processing space 71 is prevented. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus for performing processing on a semiconductor substrate, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, a substrate for an optical disk, etc. (hereinafter also simply referred to as “substrate”). Related to improved cleaning.

  2. Description of the Related Art Conventionally, a technique for performing etching and cleaning on a glass substrate for a liquid crystal display device while horizontally conveying the glass substrate with a conveying roller is known (Patent Document 1).

  Here, when the technique of Patent Document 1 is applied to a manufacturing process of a low-temperature polysilicon TFT (Thin Film Transistor) liquid crystal, the low-temperature polysilicon TFT liquid crystal is manufactured by the following procedure, for example.

  (1) First, an amorphous silicon thin film is formed on a device surface on a glass substrate by a CVD (Chemical Vapor Deposition) method. (2) Next, a laser (eg, excimer laser) is irradiated to the amorphous silicon film so that the amorphous silicon film is crystallized and modified into a polycrystalline silicon film, and laser annealing is performed on the amorphous silicon film. Processing is performed. (3) A transparent electrode such as ITO (Indium Tin Oxide), a driver circuit for driving liquid crystal, and the like are formed on the polycrystalline silicon film, and a liquid crystal display device is built on the glass substrate.

  Amorphous silicon has high activity, and when oxygen in the air and moisture that has taken in organic substances in the air come into contact with the amorphous silicon, silicon oxide is formed on the surface of the amorphous silicon film. . As a result, the surface of the amorphous silicon film is contaminated with an oxide containing impurities such as organic substances in the air.

  Therefore, in the manufacturing process of the low-temperature polysilicon TFT liquid crystal, it is necessary to expose a clean surface of amorphous silicon on the upper surface of the glass substrate prior to the laser annealing process, and etching with hydrogen fluoride or the like is performed on the upper surface of the glass substrate. Processing is performed.

JP 2003-124182 A

  However, the amorphous silicon film has water repellency, and the rinse liquid (for example, pure water) supplied onto the amorphous silicon film becomes spherical due to its surface tension. Therefore, since the chemical used in the etching process is washed away from the glass substrate, when the rinse liquid is supplied onto the glass substrate, the amorphous silicon exposed by the etching process becomes spherical with oxygen in the air. Contact with rinse solution.

  As a result, the amorphous silicon on the glass substrate, the moisture of the rinsing liquid, and the oxygen in the air combine, and the surface of the amorphous silicon film has a silicon oxide stain (watermark) that causes device defects. Is formed.

  From the cause of the generation of the watermark, it can be understood that the generation of the watermark can be prevented if the contact between the amorphous silicon film on the surface of the glass substrate and oxygen in the air is inhibited.

  For example, when the glass substrate after etching is immersed (dip) in the rinsing liquid stored in the processing tank, the periphery of the glass substrate after etching is covered with the rinsing liquid, and the amorphous silicon on the glass substrate is exposed to the atmosphere. Rinse with a rinse without touching.

  In addition, if the density of spray nozzles for supplying rinsing liquid is increased and the rinsing liquid is puddleed on the substrate, the amorphous silicon on the glass substrate is washed with the rinsing liquid without being exposed to the atmosphere. The

  However, the rinse liquid once used for the cleaning treatment may contain contaminants such as metal ions. Therefore, in the method of immersing the glass substrate in the rinsing liquid and the method of depositing the rinsing liquid on the glass substrate, the circulating water supplied by the circulation mechanism is not used as the rinsing liquid, and an unused new liquid is rinsed. Used as a liquid. And the used rinse liquid is discharged | emitted by the waste liquid treatment facility in a factory as waste liquid.

  As a result, in order to prevent contact with oxygen, when the technique of immersing the glass substrate in the rinsing liquid and the technique of piling up the rinsing liquid on the glass substrate, the amount of the rinsing liquid used increases, In some cases, the problem of exceeding the treatment capacity of the drainage treatment facility also arises.

  Accordingly, an object of the present invention is to provide a substrate processing apparatus that can clean a substrate satisfactorily even in the air.

  In order to solve the above-mentioned problem, the invention of claim 1 is a substrate processing apparatus, and is arranged in a transport direction along the transport path, above the transport path, and a transport section that transports the substrate, A shielding gas is supplied to a first processing space surrounded by the first blocking plate adjacent to the upper surface of the substrate transferred by the transfer unit and at least the substrate transferred by the transfer unit and the first blocking plate. A shield gas supply unit and a first rinse liquid supply unit for supplying a first rinse liquid to the upper surface of the substrate are provided, and the first rinse liquid is supplied to the first processing space in the atmosphere of the shield gas. Thus, the substrate transported by the transport unit is washed.

  According to a second aspect of the present invention, in the substrate processing apparatus of the first aspect, the first blocking plate extends upward in a direction intersecting the transport direction while protruding upward from the upper surface of the first blocking plate. A hollow projecting portion having a hollow space that opens toward the transport unit, and the first rinsing liquid supply unit is formed along the extending direction of the hollow projecting portion. A plurality of spaces are provided.

  According to a third aspect of the present invention, in the substrate processing apparatus according to the first aspect, the first rinsing liquid supply unit is disposed on the upper surface of the substrate via an opening provided in the first blocking plate. Rinse solution is supplied.

  According to a fourth aspect of the present invention, in the substrate processing apparatus according to any one of the first to third aspects, the transport unit transports the substrate in an inclined direction intersecting the transport direction, The shield gas supply unit supplies a gas heavier than air as the shield gas, and is provided in the vicinity of the first end portion that is inclined upward among the both end portions of the first blocking plate along the inclination direction. It is characterized by.

  Further, the invention according to claim 5 is the substrate processing apparatus according to any one of claims 1 to 3, wherein the transport unit transports the substrate in an inclined direction intersecting the transport direction, The shield gas supply unit supplies a gas lighter than air as the shield gas, and is provided in the vicinity of a second end portion that is inclined downward among both end portions of the first blocking plate along the inclination direction. It is characterized by that.

  The invention according to claim 6 is the substrate processing apparatus according to any one of claims 1 to 5, wherein the substrate processing apparatus is disposed below the transport path and is close to the lower surface of the substrate transported by the transport unit. And an atmosphere of the shielding gas is formed in the second processing space prior to the transfer of the substrate to the second processing space surrounded by the first and second blocking plates. It is characterized by.

  The invention according to claim 7 is the substrate processing apparatus according to claim 6, further comprising a second rinse liquid supply unit that supplies a second rinse liquid to the lower surface of the substrate.

  The invention according to claim 8 is the substrate processing apparatus according to any one of claims 1 to 7, wherein the first rinsing liquid adhering to the upper surface of the substrate is removed in the transport direction. It further has a dry gas supply part for supplying a dry gas near the downstream end of the first blocking plate.

  According to a ninth aspect of the present invention, in the substrate processing apparatus according to any one of the first to seventh aspects, the third rinse liquid is supplied to the vicinity of the downstream end of the first blocking plate in the transport direction. Accordingly, the third rinse liquid supply unit for forming a liquid film with the first and third rinse liquids on the upper surface of the substrate to which the first rinse liquid adheres, and the liquid film formed on the upper surface of the substrate are removed. And an air supply unit for supplying air toward the liquid film.

  According to the first to ninth aspects of the present invention, an atmosphere of shield gas can be formed in the first processing space surrounded by the substrate transported by the transport unit and the first blocking plate. Thereby, it is possible to prevent the substrate from coming into contact with oxygen contained in the atmosphere without covering the upper surface of the substrate with the first rinse liquid. For this reason, it is possible to prevent generation of a watermark on the substrate due to the moisture and oxygen of the first rinse liquid while suppressing the amount of the first rinse liquid used.

  In the inventions according to claims 1 to 9, it is sufficient to form an atmosphere of a shielding gas at least in the first processing space in order to prevent the substrate and oxygen from contacting each other during the rinsing process. Thus, it is possible to prevent the watermark from being generated on the substrate without increasing the amount of shield gas used.

  In particular, according to the second aspect of the present invention, the plurality of first rinse liquid supply portions are provided in the hollow space of the hollow protrusion along the extending direction of the hollow protrusion. Thereby, a 1st rinse liquid supply part can be arrange | positioned close to a board | substrate, and a 1st rinse liquid can be supplied to the substantially linear shape along the extending direction of a hollow protrusion part on the board | substrate conveyed. As a result, the first rinse liquid can be satisfactorily supplied to the entire surface of the substrate being transported.

  In particular, according to the invention described in claim 3, it is not necessary to provide the first rinse liquid supply part between the substrate and the first blocking plate, and the first blocking plate can be brought close to the substrate, The size of the first processing space can be set small. Therefore, the amount of shield gas used can be further reduced, and the manufacturing cost of the semiconductor product can be reduced.

  In particular, according to the invention described in claim 6, in the cleaning process, the substrate is transported to the second processing space in the atmosphere of the shielding gas, and then the first rinse is performed on the substrate transported to the second processing space. It is executed by supplying the liquid. That is, the cleaning with the first rinsing liquid is performed in the second processing space where the atmosphere of the shielding gas is formed.

  Thereby, it can prevent reliably that oxygen contained in air | atmosphere and a board | substrate contact during the washing | cleaning by a 1st rinse liquid. Therefore, it is possible to further prevent generation of a watermark on the substrate due to moisture and oxygen of the first rinse liquid while suppressing the amount of the first rinse liquid used.

  According to the invention described in claim 6, it is sufficient that the atmosphere of the shielding gas is formed in the second processing space, and the watermark is generated on the substrate without increasing the amount of the shielding gas used. Can be prevented.

  In particular, according to the eighth aspect of the invention, the dry gas can be supplied near the downstream end of the first blocking plate in the transport direction. Thereby, the board | substrate carried out to the downstream of a 1st shielding board in the state to which the 1st rinse liquid adhered was dried with dry gas, being covered with dry gas. Therefore, it is possible to prevent the occurrence of a watermark on the substrate due to the moisture and oxygen of the first rinse liquid during drying.

  In particular, according to the invention described in claim 9, after the liquid film is formed on the upper surface of the substrate carried out downstream of the first blocking plate, the liquid film is dried by the air supplied from the air supply unit. Can be made. That is, the surface of the substrate immediately after being transported to the downstream side of the first blocking plate is already covered with the liquid film, and the surface of the substrate does not come into contact with oxygen. Further, the liquid film is removed from the upper surface of the substrate at once by air. Thus, the substrate carried out downstream of the first blocking plate does not react with the moisture and oxygen in the liquid film. Therefore, even when air containing oxygen as a drying gas is used for drying the substrate, it is possible to satisfactorily prevent a watermark from being generated on the substrate.

It is a block diagram which shows an example of the whole structure of the substrate processing apparatus in the 1st and 2nd embodiment of this invention. It is a top view which shows an example of a structure of the rinse process part and drying process part in the 1st Embodiment of this invention. It is a bottom view which shows an example of a structure of the rinse process part and drying process part in the 1st Embodiment of this invention. It is the figure which looked at the rinse process part in the 1st Embodiment of this invention toward the upstream from the downstream of the conveyance direction of a board | substrate. It is a side view which shows an example of a structure of the rinse process part and drying process part in the 1st Embodiment of this invention. It is a side view which shows an example of a structure of the rinse process part and drying process part in the 2nd Embodiment of this invention. It is the figure which looked at the rinse process part in the 3rd Embodiment of this invention toward the upstream from the downstream of the conveyance direction of a board | substrate.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

<1. First Embodiment>
<1.1. Configuration of substrate processing apparatus>
FIG. 1 is a diagram showing an example of the configuration of a substrate processing apparatus 1 according to the first embodiment of the present invention. The substrate processing apparatus 1 is an apparatus that performs processing on a substrate to be transferred. As shown in FIG. 1, the substrate processing apparatus 1 mainly includes a chemical processing unit 2, a rinse processing unit 3, a drying processing unit 8, and a control unit 9. And.

  Here, the substrate processing apparatus 1 employs a flat flow method in which the substrate is transported in a substantially horizontal posture along the arrow AR1 direction (substantially X-axis direction: transport direction). Then, it is conveyed to the rinsing processing unit 3 and the drying processing unit 8 in this order. In addition, in FIG. 1 and the subsequent drawings, an XYZ orthogonal coordinate system in which the Z-axis direction is a vertical direction and the XY plane is a horizontal plane is appropriately attached as necessary to clarify the directional relationship. .

  The chemical processing unit 2 performs chemical processing (for example, etching processing for removing a natural oxide film formed on the substrate) on the substrate by supplying the chemical to the transported substrate. Then, the chemical-treated substrate is transferred to the rinse processing unit 3.

  The rinsing processing unit 3 performs a rinsing process for washing away the chemical liquid adhering to the substrate by supplying a rinse liquid such as pure water to the chemical-treated substrate. Then, the rinsed substrate is transported to the drying processing unit 8. Moreover, the drying process part 8 blows away the rinse liquid adhering to a board | substrate by supplying dry gas to the board | substrate by which the rinse process was carried out, and dries a board | substrate. The detailed configuration of the rinsing processing unit 3 and the drying processing unit 8 will be described later.

  The control unit 9 manages the manufacturing process of the semiconductor product by the substrate processing apparatus 1 by controlling the operation status of the chemical processing unit 2, the rinse processing unit 3, and the drying processing unit 8. As shown in FIG. 1, the control unit 9 is electrically connected to the chemical solution processing unit 2, the rinse processing unit 3, and the drying processing unit 8 through a signal line 95.

  The memory 91 is a volatile or nonvolatile storage unit, and stores a program 91a, data, and the like. A CPU (Central Processing Unit) 92 executes processes by the chemical solution processing unit 2, the rinse processing unit 3, and the drying processing unit 8 at a desired timing in accordance with a program 91a stored in the memory 91.

<1.2. Configuration of Rinse Processing Unit and Drying Processing Unit>
2 and 3 are a plan view and a bottom view showing an example of the configuration of the rinsing processing unit 3 and the drying processing unit 8, respectively. FIG. 4 is a view of the rinsing processing unit 3 as viewed from the downstream side in the conveyance direction (arrow AR1 direction) of the substrate W toward the upstream side. FIG. 5 is a side view showing an example of the configuration of the rinsing processing unit 3 and the drying processing unit 8.

<1.2.1. Structure of rinse treatment section>
First, the structure of the rinse process part 3 is demonstrated. As shown in FIGS. 2 to 5, the rinsing processing unit 3 mainly includes a conveyance roller 30, blocking plates 40 and 70, a shield gas supply nozzle 50, and rinse liquid supply nozzles 60 and 80. Yes.

  A plurality of (six in this embodiment) transport rollers 30 are arranged at substantially equal intervals along the transport direction of the substrate W (in the direction of the arrow AR1), as shown in FIGS. Each transport roller 30 has a substantially cylindrical outer shape, and is disposed such that its axis is substantially parallel to the Y axis.

  Therefore, when each transport roller 30 is rotated around the axis by a drive motor (not shown), the substrate W is transported along the transport path 30a and delivered to the drying processing unit 8. As described above, in the present embodiment, the plurality of transport rollers 30 are used as a transport unit that transports the substrate W in the transport direction (arrow AR1 direction) along the transport path 30a (the chain line in FIG. 5).

  The blocking plate 40 (first blocking plate) is a member formed by, for example, pressing a plate material. As shown in FIG. 5, the blocking plate 40 is disposed above the transport path 30 a and is close to the upper surface of the substrate W transported by each transport roller 30. Thereby, the blocking plate 40 covers the upper side of the substrate W to be transported. Further, the blocking plate 40 is provided with a plurality of hollow protrusions 42 used as an installation space for the rinsing liquid supply nozzle 60.

  Each of the plurality (six in this embodiment) of hollow projecting portions 42 is a cylindrical body provided so as to project upward from the upper surface of the blocking plate 40 as shown in FIG. As shown in FIG. 4, the hollow protrusion 42 is provided to extend in the arrow AR2 direction (substantially Y-axis direction: extension direction) intersecting (substantially orthogonal) with the transport direction (substantially X-axis direction). . Furthermore, as shown in FIG. 5, the blocking plate 40 has a hollow space 42 a that opens to the conveyance roller 30 side (downward). A corresponding rinse liquid supply nozzle 60 is disposed in the hollow space 42 a of each hollow protrusion 42.

  The plurality of shield gas supply nozzles 50 and 55 are gas supply units (shield gas supply units) that supply a shield gas from the shielding plate 40 side to the respective transport rollers 30 side. As shown in FIGS. 2, 4, and 5, the plurality of shield gas supply nozzles 50 are substantially disposed on the upper portions 43 of the hollow protrusions 42 along the extending direction of the hollow protrusions 42 (the direction of the arrow AR <b> 2). It is provided at equal intervals. On the other hand, the plurality of shield gas supply nozzles 55 are provided in the flat portion 44 that is lower in height than the upper portion 43 of the hollow protrusion 42 (Z coordinate is small) and close to each transport roller 30. Further, as shown in FIGS. 2 and 4, the plurality of shield gas supply nozzles 55 are provided at substantially equal intervals along the extending direction of the hollow projecting portion 42 (the direction of the arrow AR <b> 2).

  Further, as shown in FIG. 4, each shield gas supply nozzle 50 is connected in communication with a shield gas supply source 54 via a pipe 51 and a valve 52. On the other hand, each shield gas supply nozzle 55 is connected to a shield gas supply source 54 through a pipe 56 and a valve 57.

  Therefore, when any one of the valves 52 and 57 is opened according to the control signal from the control unit 9, the shield gas is discharged from the shield gas supply nozzle 50 and / or 55 to the respective transport rollers 30. The A shielding gas is supplied to at least the first processing space 71 surrounded by the substrate W and the shielding plate 40 conveyed by each conveying roller 30, and the air in the first processing space 71 is replaced with the shielding gas. The

  Here, in the present embodiment, the shielding gas is nitrogen gas, argon gas, helium gas, or the like, or a gas mainly containing a gas inert to the substrate W, A gas that does not oxidize the substrate W is used.

  The plurality of rinsing liquid supply nozzles 60 supply a rinsing liquid to the upper surface of the substrate W to be conveyed by discharging a rinsing liquid (first rinsing liquid) from the blocking plate 40 side to each conveying roller 30 side. (First rinse liquid supply unit). Further, as shown in FIGS. 2, 4, and 5, the plurality of rinse liquid supply nozzles 60 are fixed to the hollow space 42 a of the hollow projecting portion 42 along the extending direction of the hollow projecting portion 42, It is possible to approach the substrate W to be transported. In the present embodiment, each rinsing liquid supply nozzle 60 is constituted by a spray nozzle, but may be a slit nozzle extending in the Y-axis direction.

  Further, as shown in FIG. 5, each rinsing liquid supply nozzle 60 is fixed so that the nozzle tip is inclined obliquely downward and rearward when viewed from the transport direction of the substrate W, and is rinsed from obliquely above the substrate W. Give liquid water flow. Further, as shown in FIG. 4, each rinse liquid supply nozzle 60 is connected in communication with a first rinse liquid supply source 64 via a pipe 61 and a valve 62.

  Accordingly, when the valve 62 is opened in accordance with a control signal from the control unit 9, the rinse liquid (first rinse liquid) discharged from each rinse liquid supply nozzle 60 protrudes hollow on the upper surface of the substrate W to be transported. It is supplied in a substantially linear shape along the extending direction of the portion 42. Therefore, each rinsing liquid supply nozzle 60 can provide the rinsing liquid (first rinsing liquid) satisfactorily over the entire upper surface of the substrate W being transported, and can clean the substrate W satisfactorily.

  As described above, the control unit 9 cleans the substrate W transported along the transport path 30a by supplying the rinse liquid (first rinse liquid) to the first processing space 71 in the shielding gas atmosphere. Is configured to do.

  In the present embodiment, pure water is used as the rinse liquid (first rinse liquid) supplied from the first rinse liquid supply source 64.

  The blocking plate 70 (second blocking plate) is a plate-like body disposed below the transport path 30a. As shown in FIG. 5, the blocking plate 70 is close to the lower surface of the substrate W transported by each transport roller 30 and covers the lower side of the transported substrate W. As shown in FIGS. 3 and 5, the blocking plate 70 is composed of a plurality of plate materials, and each plate material is disposed in the gap between the adjacent conveyance rollers 30.

  As described above, the second processing space 72 surrounded by the shielding plate 40 disposed above the transport path 30a and the lower portion of the transport path 30a causes the rinse processing unit 3 to be surrounded by the shielding plates 40 and 70. Separated from outside space.

  Here, amorphous silicon formed in the manufacturing process of the low-temperature polysilicon TFT liquid crystal has water repellency and very high activity. Further, when the rinse liquid is supplied to the substrate on which the amorphous silicon film is formed, the rinse liquid becomes spherical due to the surface tension.

  Therefore, in the conventional technique, when the rinse liquid is supplied onto the glass substrate, the amorphous silicon exposed by the etching process comes into contact with the oxygen in the air and the rinse liquid formed into a spherical shape. As a result, the amorphous silicon on the glass substrate, the moisture of the rinsing liquid, and the oxygen in the air are combined, and a watermark that causes device defects is formed on the surface of the amorphous silicon film. .

  In contrast, in the present embodiment, the shield gas is discharged from the shield gas supply nozzles 50 and 55 to the second processing space 72 before the substrate W is transferred to the second processing space 72. The cleaning with the rinsing liquid is performed in the second processing space 72 in which the shield gas atmosphere is formed. That is, in the cleaning process in the rinsing unit 3, it is possible to reliably prevent the device surface on the substrate W on which the wiring pattern is formed from coming into contact with oxygen contained in the atmosphere.

  Further, as described above, in the cleaning process in the rinsing unit 3, oxygen contained in the atmosphere without immersing the substrate W in the stored rinsing liquid or depositing the rinsing liquid on the substrate W, It can prevent that the board | substrate W contacts.

  Therefore, the rinsing processing unit 3 can further prevent generation of a watermark on the substrate W due to moisture and oxygen of the rinsing liquid while suppressing the amount of the rinsing liquid used.

  The plurality of rinsing liquid supply nozzles 80 discharge a rinsing liquid (second rinsing liquid) from the blocking plate 70 side to the blocking plate 40 side, thereby supplying a rinsing liquid to the lower surface of the substrate W being transported ( 2nd rinse liquid supply part). In the present embodiment, each rinse liquid supply nozzle 80 is constituted by, for example, a spray nozzle.

  As shown in FIGS. 3 and 5, the plurality of rinsing liquid supply nozzles 80 are fixed to each plate material of the blocking plate 70 along the axial direction (substantially Y-axis direction) of the transport roller 30. , And can be brought close to the substrate W to be transported.

  Further, as shown in FIG. 5, each rinse liquid supply nozzle 80 is set so that the water flow of the rinse liquid to be discharged is vertically upward (Z-axis positive direction). Furthermore, as shown in FIG. 4, each rinsing liquid supply nozzle 80 is connected in communication with a second rinsing liquid supply source 84 via a pipe 81 and a valve 82.

  Accordingly, when the valve 82 is opened according to the control signal from the control unit 9, the rinse liquid (second rinse liquid) discharged from each rinse liquid supply nozzle 80 is transferred to the lower surface of the substrate W to be transferred. It is supplied in a substantially linear shape along the axial direction of the roller 30. Therefore, each rinsing liquid supply nozzle 80 can supply the rinsing liquid (second rinsing liquid) satisfactorily to the entire lower surface of the substrate W being transported, and can clean the lower surface of the substrate W satisfactorily. .

  In the present embodiment, pure water is used as the rinse liquid (second rinse liquid) supplied from the second rinse liquid supply source 84.

<1.2.2. Configuration of drying processing section>
Next, the configuration of the drying processing unit 8 will be described. As shown in FIG. 5, the drying processing unit 8 mainly has a plurality of drying gas knife nozzles 85 (85a, 85b).

  The dry gas knife nozzle 85a is disposed above the transport path 30a, and is provided on the downstream side (rear side) of the blocking plates 40 and 70 when viewed from the transport direction (arrow AR1 direction) of the substrate W. Further, the dry gas knife nozzle 85a is fixed so that the tip of the nozzle is inclined obliquely downward and rearward when viewed from the transport direction of the substrate W, and applies a gas flow of the dry gas from obliquely above the substrate W. Then, a substantially linear dry gas flow along a direction (for example, substantially Y-axis direction) intersecting (substantially orthogonal to) the transport direction of the substrate W is supplied to the upper surface of the substrate W carried out from the rinse processing unit 3. Is done.

  On the other hand, the dry gas knife nozzle 85b is disposed below the transport path 30a and is provided on the downstream side (rear side) of the blocking plates 40 and 70 when viewed from the transport direction of the substrate W. The dry gas knife nozzle 85b is fixed so that the nozzle tip is inclined obliquely upward and rearward when viewed from the transport direction of the substrate W, and applies a gas flow of the dry gas from obliquely below the substrate W. Then, a substantially linear dry gas flow along a direction (for example, substantially Y-axis direction) intersecting (substantially orthogonal to) the transport direction of the substrate W is supplied to the lower surface of the substrate W carried out from the rinse processing unit 3. Is done.

  Further, each of the dry gas knife nozzles 85 a and 85 b is connected to a dry gas supply source 89 through a pipe 86 and a valve 87.

  Therefore, the dry gas knife nozzle 85a supplies the compressed dry gas to the vicinity of the downstream end portion 40a of the blocking plate 40 in the transport direction of the substrate W. Thereby, the rinse liquid adhering to the upper surface of the substrate W is scattered by the dry gas.

  That is, the rinsing liquid (first rinsing liquid) adheres to the upper surface of the substrate W carried out downstream (backward) of the blocking plate 40 as viewed from the transport direction of the substrate W, while the upper surface of the substrate W Is dried by the dry gas while being covered with the dry gas discharged from the dry gas knife nozzle 85a. Therefore, it is possible to prevent a watermark caused by moisture and oxygen of the rinse liquid from being generated on the upper surface of the substrate W during drying.

  Thus, in the present embodiment, the dry gas knife nozzle 85a serves as a dry gas supply unit that supplies a dry gas so that at least the rinse liquid (first rinse liquid) adhering to the upper surface of the substrate W is removed. used.

  On the other hand, the dry gas knife nozzle 85b supplies the compressed dry gas to the vicinity of the downstream end portion 70a of the blocking plate 70 when viewed from the transport direction of the substrate W. Thereby, the rinse liquid adhering to the lower surface of the substrate W is scattered by the dry gas.

  That is, the rinsing liquid (second rinsing liquid) adheres to the lower surface of the substrate W carried out downstream (backward) of the blocking plate 70 when viewed from the transport direction of the substrate W, while the upper surface of the substrate W Is dried by the dry gas while being covered with the dry gas discharged from the dry gas knife nozzle 85b. Therefore, it is possible to prevent the occurrence of a watermark on the lower surface of the substrate W due to moisture and oxygen of the rinse liquid during drying.

  As described above, in the present embodiment, the dry gas knife nozzle 85b serves as a dry gas supply unit that supplies dry gas so that at least the rinse liquid (second rinse liquid) adhering to the lower surface of the substrate W is removed. used.

  Here, in the present embodiment, the dry gas is nitrogen gas, argon gas, helium gas, or the like, or a gas mainly containing a gas inert to the substrate W, like the shield gas. Therefore, it is preferable to use a gas that does not oxidize the substrate W to be cleaned.

<1.3. Advantages of Substrate Processing Apparatus in First Embodiment>
As described above, the substrate processing apparatus 1 according to the first embodiment generates a shield gas atmosphere in the first processing space 71 surrounded by the substrate W transported by the transport rollers 30 and the shielding plate 40. Can be formed. As a result, even when the rinsing process is performed on the substrate W on which a film having water repellency and easily oxidized, such as an amorphous silicon film, is applied, the upper surface of the substrate W is rinsed (first rinse). The substrate W is not covered with the liquid) and there is almost no contact between the substrate W and oxygen contained in the atmosphere. Therefore, it is possible to prevent generation of a watermark on the substrate W due to moisture and oxygen of the rinse liquid while suppressing the amount of the rinse liquid (first rinse liquid) used.

  In addition, in the substrate processing apparatus 1 of the first embodiment, it is sufficient to form at least a shield gas atmosphere in the first processing space 71 in order to suppress contact between the substrate W and oxygen during the rinsing process. It is. As described above, the substrate processing apparatus 1 according to the first embodiment can prevent the watermark from being generated on the substrate without increasing the amount of the shielding gas used.

<2. Second Embodiment>
Next, a second embodiment of the present invention will be described. The substrate processing apparatus 100 according to the second embodiment is different from the substrate processing apparatus 1 according to the first embodiment except that the configuration of the drying processing unit is different from that of the first embodiment. The same. Therefore, in the following, this difference will be mainly described.

  In the following description, the same reference numerals are given to the same constituent elements as those in the substrate processing apparatus 1 of the first embodiment. Since the components with the same reference numerals have already been described in the first embodiment, description thereof will be omitted in the present embodiment.

<2.1. Configuration of Rinse Processing Unit and Drying Processing Unit>
FIG. 6 is a side view showing an example of the configuration of the rinsing processing unit 3 and the drying processing unit 108 according to the second embodiment of the present invention. As shown in FIG. 6, the drying processing unit 108 mainly has a plurality of air knife nozzles 185 (185a, 185b) and a third rinse liquid supply nozzle 195.

  As shown in FIG. 6, the air knife nozzle 185a is disposed above the transport roller 30, and is provided on the downstream side (rear side) of the blocking plates 40 and 70 when viewed from the transport direction of the substrate W (arrow AR1 direction). ing. Further, the air knife nozzle 185a is fixed so that the tip of the nozzle is inclined obliquely downward and rearward when viewed from the transport direction of the substrate W, and provides an air flow from obliquely upward of the substrate W. Then, a substantially linear air flow along a direction (for example, substantially Y-axis direction) intersecting (substantially orthogonal to) the transport direction of the substrate W is supplied to the upper surface of the substrate W carried out from the rinse processing unit 3. The

  On the other hand, as shown in FIG. 6, the air knife nozzle 185 b is disposed below the transport path 30 a and is provided on the downstream side (rear side) of the blocking plates 40 and 70 when viewed from the transport direction of the substrate W. Further, the air knife nozzle 185b is fixed so that the tip of the nozzle is inclined obliquely upward and rearward when viewed from the transport direction of the substrate W, and gives an air flow from obliquely below the substrate W. Then, a substantially linear air flow along a direction (for example, a substantially Y-axis direction) intersecting (substantially orthogonal to) the transport direction of the substrate W is supplied to the lower surface of the substrate W carried out from the rinse processing unit 3. The

  Further, each of the air knife nozzles 185 a and 185 b is connected to an air supply source 189 through a pipe 186 and a valve 187.

  The third rinsing liquid supply nozzle 195 supplies a rinsing liquid to the upper surface of the substrate W to be conveyed by discharging a rinsing liquid (third rinsing liquid) from the blocking plate 40 side to each conveying roller 30 side. (Third rinse liquid supply unit). In the present embodiment, the third rinsing liquid supply nozzle 195 is constituted by a so-called slit nozzle, and is disposed above the transport path 30a as shown in FIG. The third rinsing liquid supply nozzle 195 is provided on the downstream side (rear) of the blocking plate 40 and the upstream side (front) of the air knife nozzle 185 when viewed from the transport direction of the substrate W. Further, the third rinse liquid supply nozzle 195 is connected in communication with a third rinse liquid supply source 199 via a pipe 196 and a valve 197.

  Therefore, when the valve 197 is opened according to the control signal from the control unit 9, the rinsing liquid (third rinsing liquid) is discharged toward the vicinity of the downstream end 40a of the blocking plate 40 in the transport direction of the substrate W, On the upper surface of the substrate W to which the rinsing liquid (first rinsing liquid) adheres, a liquid film 195a is formed by the rinsing liquid (first and third rinsing liquids). That is, the upper surface of the substrate W carried out downstream (backward) of the blocking plate 40 is covered with the liquid film 195a.

  Next, when the valve 187 is opened in accordance with a control signal from the control unit 9, air from the air knife nozzle 185 a is discharged onto the upper surface of the substrate W on which the liquid film 195 a is formed, and the liquid is discharged from the upper surface of the substrate W. The film 195a is removed at once.

  That is, the upper surface of the substrate W immediately after being transported to the downstream side of the blocking plate 40 when viewed from the transport direction of the substrate W is already covered with the liquid film 195a, and the upper surface of the substrate W is in contact with oxygen. There is no. Further, the liquid film 195a is removed from the upper surface of the substrate W at once by air.

  Thus, the board | substrate carried out to the downstream of the shielding board 40 does not react with the water | moisture content and oxygen of the liquid film 195a. Therefore, even when air containing oxygen instead of an inert gas is used as the drying gas for the substrate drying process, it is possible to satisfactorily prevent the generation of a watermark on the substrate W. The air knife nozzle 185a is used as an air supply unit that supplies air toward the liquid film 195a so that the liquid film 195a formed on the upper surface of the substrate W is removed.

  In the present embodiment, pure water is used as the rinse liquid (third rinse liquid) supplied from the third rinse liquid supply nozzle 195.

<2.2. Advantages of Substrate Processing Apparatus in Second Embodiment>
As described above, in the substrate processing apparatus 100 according to the second embodiment, the liquid film 195a of the rinsing liquid is formed on the substrate W carried out from the rinsing processing unit 3, and then rinsed from above the substrate W by the air knife. The liquid is scattered. For this reason, even when air containing oxygen is used as the dry gas, it is possible to satisfactorily prevent the generation of a watermark on the rinsed substrate W.

<3. Third Embodiment>
Next, a third embodiment of the present invention will be described. The substrate processing apparatus 200 according to the third embodiment is different from the substrate processing apparatus 1 according to the first embodiment except that the configuration of the rinse processing unit is different from that of the first embodiment. The same. Therefore, in the following, this difference will be mainly described.

  In the following description, the same reference numerals are given to the same constituent elements as those in the substrate processing apparatus 1 of the first embodiment. Since the components with the same reference numerals have already been described in the first embodiment, description thereof will be omitted in the present embodiment.

<3.1. Structure of rinse treatment section>
FIG. 7 is a view of the rinsing processing unit 203 in the third embodiment of the present invention as viewed from the downstream side to the upstream side in the substrate W transport direction (arrow AR1 direction). The plurality of transport rollers 230 are transport units that transport the substrate W in an inclined manner. As shown in FIG. 7, each transport roller 230 is arranged such that its axis is inclined with respect to the horizontal axis (Y axis). Thus, the substrate W is transported while being tilted in the direction of the arrow AR3 (inclination direction) intersecting (substantially orthogonal) with the transport direction (substantially X-axis direction).

  Further, as shown in FIG. 7, the blocking plates 40 and 70 are arranged so as to be inclined with respect to the horizontal axis (Y-axis) in the same manner as the transport rollers 230. The second processing spaces 71 and 72 are also inclined with respect to the horizontal axis (Y axis).

  In this case, when a gas heavier than air (for example, carbon dioxide, argon, etc.) is supplied as a shielding gas, at least near the end inclined upward, of both ends of the shielding plate 40 along the inclined direction. The shield gas may be configured to be supplied from the shield gas supply nozzles 50b and 55b.

  On the other hand, when a gas (for example, nitrogen gas) lighter than air is supplied as the shield gas, at least the shield gas supply nozzle near the end inclined downward in the both ends of the shielding plate 40 along the inclination direction. The shield gas may be supplied from 50a and 55a.

<3.2. Advantages of Substrate Processing Apparatus in Third Embodiment>
As described above, the substrate processing apparatus 200 in the third embodiment can supply the shielding gas to the first and second processing spaces 71 and 72 by a supply method according to the type of the shielding gas. Thereby, it is possible to efficiently supply the shielding gas to the first and second processing spaces 71 and 72 while suppressing the amount of the shielding gas used.

<4. Modification>
Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and various modifications can be made.

  (1) In the first to third embodiments, the rinsing liquid supply nozzles 60, 80, and 195 are rinsed from different rinsing liquid supply sources (first to third rinsing liquid supply sources 64, 84, and 199). Although the liquid is described as being supplied, the present invention is not limited to this. For example, each of the rinse liquid supply nozzles 60, 80, and 195 may be configured so that the rinse liquid from a common rinse liquid supply source is supplied.

  (2) In the first to third embodiments, the rinsing liquid (first rinsing liquid) supplied to the upper surface of the substrate W is a rinsing liquid supply nozzle disposed in the hollow space 42 a of the hollow protrusion 42. Although it has been described that the liquid is discharged by the nozzle 60, the present invention is not limited to this. For example, the blocking plate 40 may have a flat plate shape without the hollow projecting portion 42, and a pipe nozzle fixed on the blocking plate 40 may be used as the rinsing liquid supply unit. That is, it is not necessary to provide a rinse liquid supply unit between the substrate W to be transported and the blocking plate 40. In this case, the rinse liquid is supplied to the upper surface of the substrate W through an opening provided in the blocking plate 40.

  By adopting such a configuration, the blocking plate 40 can be brought close to the substrate W, and the size of the first processing space 71 can be set small. Therefore, the amount of shield gas used can be reduced, and the manufacturing cost of the semiconductor product can be reduced.

  (3) Further, in the first to third embodiments, it is assumed that the shield gas supplied to the second processing space 72 is discharged from the shield gas supply nozzles 50 and 55 provided in the shielding plate 40. However, it is not limited to this. For example, the shielding gas may be configured to be supplied to the second processing space 72 by a shielding gas supply unit provided on the shielding plate 70.

1, 100, 200 Substrate processing apparatus 2 Chemical processing unit 3, 203 Rinse processing unit 8, 108 Drying processing unit 9 Control unit 30, 230 Conveying roller (conveying unit)
30a Conveyance path 40, 70 Blocking plate (first and second blocking plates)
42 hollow protrusion 50 (50a, 50b), 55 (55a, 55b) Shield gas supply nozzle (seal gas supply part)
60, 80, 195 Rinsing liquid supply nozzles (first to third rinsing liquid supply units)
71 1st processing space 72 2nd processing space 85 (85a, 85b) Drying gas knife nozzle (drying gas supply part)
185 (185a, 185b) Air knife nozzle (air supply part)
AR1 to AR3 arrows (conveying direction, stretching direction, and tilting direction)
W substrate

Claims (9)

A substrate processing apparatus,
(a) a transport unit that transports the substrate in the transport direction along the transport path;
(b) a first blocking plate that is disposed above the transport path and is close to the upper surface of the substrate transported by the transport unit;
(c) a shield gas supply unit for supplying a shield gas to at least a first processing space surrounded by the substrate transported by the transport unit and the first blocking plate;
(d) a first rinse liquid supply unit for supplying a first rinse liquid to the upper surface of the substrate;
With
A substrate processing apparatus for cleaning a substrate transported by the transport unit by supplying the first rinsing liquid to the first processing space in an atmosphere of the shielding gas. The substrate processing apparatus according to claim 1,
The first blocking plate is
A hollow projecting portion provided extending in a direction intersecting the transport direction while projecting upward from the upper surface of the first blocking plate, and having a hollow space that opens to the transport portion side inside;
Have
The substrate processing apparatus, wherein a plurality of the first rinse liquid supply sections are provided in the hollow space along the extending direction of the hollow protrusion. The substrate processing apparatus according to claim 1,
The substrate processing apparatus, wherein the first rinsing liquid supply unit supplies the first rinsing liquid to the upper surface of the substrate through an opening provided in the first blocking plate. The substrate processing apparatus according to claim 1, wherein:
The transport unit transports the substrate in an inclined direction that intersects the transport direction,
The shield gas supply unit
While supplying a gas heavier than air as the shielding gas,
The substrate processing apparatus, wherein the substrate processing apparatus is provided in the vicinity of a first end portion that is inclined upward among both end portions of the first blocking plate along the inclined direction. The substrate processing apparatus according to claim 1, wherein:
The transport unit transports the substrate in an inclined direction that intersects the transport direction,
The shield gas supply unit
While supplying a gas lighter than air as the shielding gas,
The substrate processing apparatus, wherein the substrate processing apparatus is provided in the vicinity of a second end portion that is inclined downward among both end portions of the first blocking plate along the inclined direction. The substrate processing apparatus according to claim 1, wherein:
(e) a second blocking plate that is disposed below the transport path and is close to the lower surface of the substrate transported by the transport unit;
Further comprising
The substrate processing apparatus is characterized in that an atmosphere of the shielding gas is formed in the second processing space before the substrate is transported to the second processing space surrounded by the first and second blocking plates. . The substrate processing apparatus according to claim 6,
(f) a second rinse liquid supply unit for supplying a second rinse liquid to the lower surface of the substrate;
A substrate processing apparatus further comprising: The substrate processing apparatus according to any one of claims 1 to 7,
(g) a dry gas supply unit that supplies a dry gas to the vicinity of the downstream end of the first blocking plate as viewed from the transport direction so that the first rinse liquid adhering to the upper surface of the substrate is removed;
The substrate processing apparatus further comprising: The substrate processing apparatus according to any one of claims 1 to 7,
(h) By supplying a third rinse liquid in the vicinity of the downstream end portion of the first blocking plate as viewed from the transport direction, the first and third surfaces are placed on the upper surface of the substrate to which the first rinse liquid adheres. A third rinsing liquid supply unit for forming a liquid film with a rinsing liquid;
(i) an air supply unit that supplies air toward the liquid film so that the liquid film formed on the upper surface of the substrate is removed;
A substrate processing apparatus comprising:

Images