JP2010248619A - 酸素含有Ｃｕ合金膜の製造方法 - Google Patents
酸素含有Ｃｕ合金膜の製造方法 Download PDFInfo
- Publication number
- JP2010248619A JP2010248619A JP2010055289A JP2010055289A JP2010248619A JP 2010248619 A JP2010248619 A JP 2010248619A JP 2010055289 A JP2010055289 A JP 2010055289A JP 2010055289 A JP2010055289 A JP 2010055289A JP 2010248619 A JP2010248619 A JP 2010248619A
- Authority
- JP
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- Prior art keywords
- oxygen
- film
- alloy
- alloy film
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 75
- 239000001301 oxygen Substances 0.000 title claims abstract description 75
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 75
- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 73
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000004544 sputter deposition Methods 0.000 claims abstract description 34
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 13
- 150000001875 compounds Chemical class 0.000 claims abstract description 13
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 13
- 239000012535 impurity Substances 0.000 claims abstract description 3
- 239000007789 gas Substances 0.000 claims description 17
- 239000000654 additive Substances 0.000 claims description 5
- 230000000996 additive effect Effects 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 28
- 239000011521 glass Substances 0.000 abstract description 22
- 238000000034 method Methods 0.000 abstract description 20
- 230000001681 protective effect Effects 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 100
- 238000010438 heat treatment Methods 0.000 description 20
- 239000000523 sample Substances 0.000 description 18
- 239000013077 target material Substances 0.000 description 15
- 239000010410 layer Substances 0.000 description 11
- 238000002438 flame photometric detection Methods 0.000 description 10
- 239000002245 particle Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910017985 Cu—Zr Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010055289A JP2010248619A (ja) | 2009-03-26 | 2010-03-12 | 酸素含有Ｃｕ合金膜の製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009077032 | 2009-03-26 | ||
| JP2010055289A JP2010248619A (ja) | 2009-03-26 | 2010-03-12 | 酸素含有Ｃｕ合金膜の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2010248619A true JP2010248619A (ja) | 2010-11-04 |
Family
ID=43129798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010055289A Pending JP2010248619A (ja) | 2009-03-26 | 2010-03-12 | 酸素含有Ｃｕ合金膜の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2010248619A (zh) |
| KR (1) | KR20100108236A (zh) |
| TW (1) | TWI452161B (zh) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013038983A1 (ja) | 2011-09-14 | 2013-03-21 | Jx日鉱日石金属株式会社 | 高純度銅マンガン合金スパッタリングターゲット |
| WO2013038962A1 (ja) | 2011-09-14 | 2013-03-21 | Jx日鉱日石金属株式会社 | 高純度銅マンガン合金スパッタリングターゲット |
| WO2013111609A1 (ja) | 2012-01-23 | 2013-08-01 | Jx日鉱日石金属株式会社 | 高純度銅マンガン合金スパッタリングターゲット |
| KR20150020117A (ko) | 2013-08-13 | 2015-02-25 | 다이도 스틸 코오퍼레이션 리미티드 | Cu합금 타겟용 재료, Cu합금 타겟, Cu합금막 및 터치패널 |
| JP2016040667A (ja) * | 2014-08-12 | 2016-03-24 | デクセリアルズ株式会社 | 多層薄膜 |
| WO2019093348A1 (ja) * | 2017-11-09 | 2019-05-16 | 三井金属鉱業株式会社 | 配線構造及びターゲット材 |
| JP2020097761A (ja) * | 2018-12-17 | 2020-06-25 | 日東電工株式会社 | 導電性フィルムの製造方法 |
| CN115386847A (zh) * | 2022-07-28 | 2022-11-25 | 河南科技大学 | 一种蓝色铜合金薄膜的制备方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016072297A1 (ja) * | 2014-11-07 | 2016-05-12 | 住友金属鉱山株式会社 | 銅合金ターゲット |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4496518B2 (ja) * | 2002-08-19 | 2010-07-07 | 日立金属株式会社 | 薄膜配線 |
| CN101501820B (zh) * | 2006-08-10 | 2012-11-28 | 株式会社爱发科 | 导电膜形成方法、薄膜晶体管、带薄膜晶体管的面板、及薄膜晶体管的制造方法 |
| KR101070185B1 (ko) * | 2006-10-03 | 2011-10-05 | Jx닛코 닛세끼 킨조쿠 가부시키가이샤 | 구리-망간 합금 스퍼터링 타겟트 및 반도체 배선 |
-
2010
- 2010-03-12 JP JP2010055289A patent/JP2010248619A/ja active Pending
- 2010-03-24 KR KR1020100026177A patent/KR20100108236A/ko not_active Ceased
- 2010-03-25 TW TW099108924A patent/TWI452161B/zh active
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013038983A1 (ja) | 2011-09-14 | 2013-03-21 | Jx日鉱日石金属株式会社 | 高純度銅マンガン合金スパッタリングターゲット |
| WO2013038962A1 (ja) | 2011-09-14 | 2013-03-21 | Jx日鉱日石金属株式会社 | 高純度銅マンガン合金スパッタリングターゲット |
| US9090970B2 (en) | 2011-09-14 | 2015-07-28 | Jx Nippon Mining & Metals Corporation | High-purity copper-manganese-alloy sputtering target |
| WO2013111609A1 (ja) | 2012-01-23 | 2013-08-01 | Jx日鉱日石金属株式会社 | 高純度銅マンガン合金スパッタリングターゲット |
| US9165750B2 (en) | 2012-01-23 | 2015-10-20 | Jx Nippon Mining & Metals Corporation | High purity copper—manganese alloy sputtering target |
| KR20150020117A (ko) | 2013-08-13 | 2015-02-25 | 다이도 스틸 코오퍼레이션 리미티드 | Cu합금 타겟용 재료, Cu합금 타겟, Cu합금막 및 터치패널 |
| JP2016040667A (ja) * | 2014-08-12 | 2016-03-24 | デクセリアルズ株式会社 | 多層薄膜 |
| WO2019093348A1 (ja) * | 2017-11-09 | 2019-05-16 | 三井金属鉱業株式会社 | 配線構造及びターゲット材 |
| JP2020097761A (ja) * | 2018-12-17 | 2020-06-25 | 日東電工株式会社 | 導電性フィルムの製造方法 |
| JP7280036B2 (ja) | 2018-12-17 | 2023-05-23 | 日東電工株式会社 | 導電性フィルムの製造方法 |
| CN115386847A (zh) * | 2022-07-28 | 2022-11-25 | 河南科技大学 | 一种蓝色铜合金薄膜的制备方法 |
| CN115386847B (zh) * | 2022-07-28 | 2023-10-27 | 河南科技大学 | 一种蓝色铜合金薄膜的制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201035351A (en) | 2010-10-01 |
| TWI452161B (zh) | 2014-09-11 |
| KR20100108236A (ko) | 2010-10-06 |
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