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JP2010114280A - Substrate heating plate heater - Google Patents

Substrate heating plate heater Download PDF

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Publication number
JP2010114280A
JP2010114280A JP2008286021A JP2008286021A JP2010114280A JP 2010114280 A JP2010114280 A JP 2010114280A JP 2008286021 A JP2008286021 A JP 2008286021A JP 2008286021 A JP2008286021 A JP 2008286021A JP 2010114280 A JP2010114280 A JP 2010114280A
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Japan
Prior art keywords
support plate
heater
plate
lid
substrate heating
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Inventor
Fukuji Nagamori
福治 永盛
Makoto Mizuniwa
眞 水庭
Masahiro Namekawa
滑川雅広
Kuniaki Miura
邦明 三浦
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Sukegawa Electric Co Ltd
Nippon Light Metal Co Ltd
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Sukegawa Electric Co Ltd
Nippon Light Metal Co Ltd
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Priority to JP2008286021A priority Critical patent/JP2010114280A/en
Publication of JP2010114280A publication Critical patent/JP2010114280A/en
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Abstract

【課題】アルミニウム製の支持板を使用したものであっても、高温時の剛性を確保し、高温の下で反りや曲がりが無く、しかもアルミニウム製の支持板としての諸特性(耐食性の優れた絶縁皮膜いわゆるアルマイト処理)を満足することが出来る基板加熱プレートヒータを得る。
【解決手段】基板加熱プレートヒータは、金属製の板体からなる支持板1と、この支持板1の中に埋設されたヒータ線3とを有する。支持板1にヒータ線3に沿って同支持板1より剛性の高い補強部材4が埋め込まれ、この補強部材4が支持板1と同じ材質の蓋体7により覆われている。
【選択図】図3
[PROBLEMS] To secure rigidity at high temperature even without using a support plate made of aluminum, there is no warping or bending at high temperature, and various characteristics (excellent corrosion resistance) as an aluminum support plate A substrate heating plate heater that can satisfy an insulating film (so-called alumite treatment) is obtained.
A substrate heating plate heater includes a support plate 1 made of a metal plate and a heater wire 3 embedded in the support plate 1. A reinforcing member 4 having higher rigidity than the supporting plate 1 is embedded in the supporting plate 1 along the heater wire 3, and the reinforcing member 4 is covered with a lid 7 made of the same material as the supporting plate 1.
[Selection] Figure 3

Description

本発明は、半導体ウエハ等の基板上に薄膜パターンを形成したり、あるいはその基板をエッチングする工程、さらには化学的気相堆積法(CVD法)等の手段でガラス基板等の基板上に薄膜を形成する工程において、基板を載せて加熱する基板加熱プレートヒータに関する。   In the present invention, a thin film pattern is formed on a substrate such as a semiconductor wafer, or the substrate is etched on the substrate, and further, a thin film is formed on a substrate such as a glass substrate by means such as chemical vapor deposition (CVD). The present invention relates to a substrate heating plate heater that places and heats a substrate in the step of forming the substrate.

例えば半導体製品は、半導体ウエハ等の基板上にフォトマスク等を適用して電極パターン等の薄膜パターンを形成したり、薄膜をエッチングして所定のパターンに形成する工程等を経て製造される。またディスクプレイ装置等に使用される透明基板上に形成される透明導電膜等からなる電極パターンは、いわゆるプラズマCVD法等の化学的気相堆積法等の手段で形成される。
これらの電子デバイス用の基板を製造する工程では、殆どの場合に基板を所定の温度に加熱した状態で行う。この基板の加熱のために基板を載置した状態で加熱するのに使用されるのが基板加熱プレートヒータである。
For example, a semiconductor product is manufactured through a process of applying a photomask or the like on a substrate such as a semiconductor wafer to form a thin film pattern such as an electrode pattern or etching a thin film into a predetermined pattern. An electrode pattern made of a transparent conductive film or the like formed on a transparent substrate used in a display device or the like is formed by means such as a chemical vapor deposition method such as a so-called plasma CVD method.
In the process of manufacturing a substrate for these electronic devices, in most cases, the substrate is heated to a predetermined temperature. A substrate heating plate heater is used to heat the substrate while it is mounted.

従来において、このような基板の加熱に使用される基板加熱プレートヒータは、熱伝導良好なステンレスやアルミニウム等の金属製の支持板の中にシーズヒータ等のヒータ線を埋め込み、このヒータ線の発熱により支持板を加熱し、その上に載せられた基板を加熱する方式のものが多い。特にアルミニウム製の支持板を使用した基板加熱プレートヒータは、支持板の熱容量が小さいので、温度応答性に優れ、加熱、冷却時間が短く、温度制御も容易である。また、表面をアルマイト処理することにより、基板面を絶縁したり、耐腐食性を増す事が出来る。   Conventionally, a substrate heating plate heater used for heating such a substrate has a heater wire such as a sheathed heater embedded in a metal support plate such as stainless steel or aluminum having good thermal conductivity, and the heater wire generates heat. In many cases, the support plate is heated by the above-described method, and the substrate placed thereon is heated. In particular, a substrate heating plate heater using an aluminum support plate has a small heat capacity of the support plate, and thus has excellent temperature responsiveness, a short heating and cooling time, and easy temperature control. Further, by anodizing the surface, the substrate surface can be insulated and the corrosion resistance can be increased.

基板加熱プレートヒータによる基板の加熱温度は薄膜パターンやホトレジスト等の成膜温度により決定されるが、400℃以上の高い加熱温度が要求されることも多い。従来のアルミニウム製の支持板を用いた基板加熱プレートヒータでは、400℃の温度以下において支持体の十分な剛性が確保出来る。しかし加熱温度が400℃を越えると、アルミニウム製の支持板は剛性の低下を来たし、曲がりやすくなるという欠点がある。   The substrate heating temperature by the substrate heating plate heater is determined by the film forming temperature of the thin film pattern, photoresist, etc., but a high heating temperature of 400 ° C. or higher is often required. In a conventional substrate heating plate heater using an aluminum support plate, sufficient rigidity of the support can be secured at a temperature of 400 ° C. or lower. However, when the heating temperature exceeds 400 ° C., the support plate made of aluminum has a drawback that the rigidity is lowered and it is easy to bend.

そのため加熱温度が高く、絶縁が必要な場合は、アルミニウムより高い剛性を有するセラミックやセラミック溶射したステンレス製等の支持板を用いた基板加熱プレートヒータを使用する必要がある。しかしながら、それらはコストが高く、ステンレス製の支持板は、アルミニウム製の支持板に比べて熱容量が大きいため、アルミニウム製の支持板を使用した基板加熱プレートヒータに比べて温度均一性が低く、温度応答性も悪く、コストも高い。また、所定の温度までの加熱や所定の温度から常温への冷却の時間が長くなり、温度制御も容易ではない。   Therefore, when the heating temperature is high and insulation is required, it is necessary to use a substrate heating plate heater using a support plate made of ceramic having higher rigidity than aluminum or ceramic sprayed stainless steel. However, they are expensive, and the stainless steel support plate has a larger heat capacity than the aluminum support plate, so the temperature uniformity is lower than the substrate heating plate heater using the aluminum support plate. Responsiveness is poor and cost is high. Further, the time for heating to a predetermined temperature and the cooling from the predetermined temperature to room temperature becomes long, and the temperature control is not easy.

特開2007−184289号公報JP 2007-184289 A 特開2007−184288号公報JP 2007-184288 A 特開2005−123000号公報JP 2005-123000 A 特開2005−122999号公報JP 2005-122999 A 特開2004−193114号公報JP 2004-193114 A 特開平11−40330号公報Japanese Patent Laid-Open No. 11-40330

本発明は、従来における基板加熱プレートヒータの前記の課題に鑑み、アルミニウム製の支持板を使用したものであっても、高温時の剛性を確保し、高温の下で反りや曲がりが無く、しかもアルマイト処理しやすいアルミニウム製の支持板としての諸特性を満足することが出来る基板加熱プレートヒータを提供することを目的とする。   In view of the above-described problems of conventional substrate heating plate heaters, the present invention ensures rigidity at high temperatures, and does not warp or bend at high temperatures, even when using an aluminum support plate. It is an object of the present invention to provide a substrate heating plate heater that can satisfy various characteristics as a support plate made of aluminum that can be easily anodized.

本発明では、前記の目的を達成するため、アルミニウム製の支持板1の内部に、ヒータ線3と共に同支持板1より剛性の高い補強部材4を埋め込み、この補強部材4を支持板1と同じ材質の蓋体7で覆うことにより、補強部材4が支持板1の表面に露出しないようにした。   In the present invention, in order to achieve the above object, a reinforcing member 4 having rigidity higher than that of the supporting plate 1 is embedded in the aluminum supporting plate 1 together with the heater wire 3, and the reinforcing member 4 is the same as the supporting plate 1. The reinforcing member 4 is prevented from being exposed on the surface of the support plate 1 by being covered with the cover 7 made of material.

すなわち、本発明による基板加熱プレートヒータは、金属製の板体からなる支持板1と、この支持板1の中に埋設されたヒータ線3とを有し、支持板1にヒータ線3に沿って同支持板1より剛性の高い補強部材4が埋め込まれ、この補強部材4が支持板1と同じ材質の蓋体7により覆われているものである。   That is, the substrate heating plate heater according to the present invention includes a support plate 1 made of a metal plate and a heater wire 3 embedded in the support plate 1, and the support plate 1 extends along the heater wire 3. A reinforcing member 4 having higher rigidity than that of the support plate 1 is embedded, and the reinforcing member 4 is covered with a lid 7 made of the same material as that of the support plate 1.

このような特徴を有する基板加熱プレートヒータでは、支持板1にヒータ線3に沿って同支持板1より剛性の高い補強部材4が埋め込まれているので、支持板1が高温になり、剛性が低下しても、補強部材4により補強され、高温時の剛性が確保出来る。しかも、補強部材4が支持板1と同じ材質の蓋体7により覆われ、補強部材4が支持板1の表面に露出しないため、補強部材4として任意のものを使用することが出来る。特に、支持板1の表面を耐食性化処理するとき等に、支持板1の表面全体を一様に表面処理することが出来るので、アルマイト処理等に向いた材質を選定でき、良好な耐食性を有する表面を容易な手段で得ることが出来る。   In the substrate heating plate heater having such a feature, since the reinforcing member 4 having rigidity higher than that of the supporting plate 1 is embedded in the supporting plate 1 along the heater wire 3, the supporting plate 1 becomes high temperature and has rigidity. Even if it falls, it is reinforced by the reinforcing member 4 and the rigidity at high temperature can be secured. In addition, since the reinforcing member 4 is covered with the lid 7 made of the same material as the support plate 1 and the reinforcing member 4 is not exposed on the surface of the support plate 1, any reinforcing member 4 can be used. In particular, when the surface of the support plate 1 is subjected to corrosion resistance treatment, the entire surface of the support plate 1 can be uniformly treated, so that a material suitable for alumite treatment can be selected and has good corrosion resistance. The surface can be obtained by easy means.

前記蓋体7は支持板1のヒータ線3と補強部材4が埋め込まれた個所を覆うと共に、この蓋体7と支持板1との接合部が一体化されていることが好ましい。例えば蓋体7が支持板1に摩擦撹拌接合により溶接されていることが好ましい。これにより、支持板1と蓋体7との不連続性が無く、耐食性化処理により高温下での接合部の部分的な腐蝕も無く、アルマイト処理等の耐食性に優れた基板加熱プレートヒータが得られる。   It is preferable that the lid body 7 covers a portion of the support plate 1 where the heater wire 3 and the reinforcing member 4 are embedded, and a joint portion between the lid body 7 and the support plate 1 is integrated. For example, the lid 7 is preferably welded to the support plate 1 by friction stir welding. As a result, there is no discontinuity between the support plate 1 and the lid 7, and there is no partial corrosion of the joint portion at high temperatures due to the corrosion resistance treatment, and a substrate heating plate heater excellent in corrosion resistance such as alumite treatment is obtained. It is done.

以上説明した通り、本発明によれば、高温下でも高い剛性を有する基板加熱プレートヒータを得ることが出来る。しかも補強部材4が支持板1の表面に表れず、同支持板1の表面を一様に表面処理することが出来るので、アルマイト処理等の良好な絶縁表面を形成することが出来、耐食性に優れた基板加熱プレートヒータが得られる。   As described above, according to the present invention, a substrate heating plate heater having high rigidity even at high temperatures can be obtained. In addition, since the reinforcing member 4 does not appear on the surface of the support plate 1 and the surface of the support plate 1 can be uniformly treated, a good insulating surface such as alumite treatment can be formed and excellent in corrosion resistance. A substrate heating plate heater can be obtained.

本発明は、アルミニウム製の支持板1の内部に、ヒータ線3と共に同支持板1より剛性の高い補強部材4を埋め込み、この補強部材4を支持板1と同じ材質の蓋体7で覆うことにより、補強部材4が支持板1の表面に露出しないようにし、前記の目的を達成するものである。
以下、本発明を実施するための最良の形態について、詳細に説明する。
In the present invention, a reinforcing member 4 having rigidity higher than that of the supporting plate 1 is embedded in the aluminum supporting plate 1 together with the heater wire 3, and the reinforcing member 4 is covered with a lid 7 made of the same material as the supporting plate 1. Thus, the reinforcing member 4 is prevented from being exposed on the surface of the support plate 1 and the above-described object is achieved.
Hereinafter, the best mode for carrying out the present invention will be described in detail.

図1は、本発明の一実施形態による基板加熱プレートヒータの底面図であり、図2はその側面図である。
支持板1は金属製の板からなり、最も好ましくはアルミニウム系合金の板が使用される。例えば厚さ50mmのアルミニウム合金の板体からなる。
FIG. 1 is a bottom view of a substrate heating plate heater according to an embodiment of the present invention, and FIG. 2 is a side view thereof.
The support plate 1 is made of a metal plate, and most preferably an aluminum alloy plate is used. For example, it is made of an aluminum alloy plate having a thickness of 50 mm.

後述するように、支持板1は表面を耐食性化するため陽極酸化等の手段で表面酸化処理し、表面にアルマイト(Al等の酸化膜被膜)を形成する。そのため、支持板1としては陽極酸化等による表面処理に適したアルミニウム合金が使用される。例えば国際アルミニウム合金名として5000番台のAl−Mg系合金や6000番台のAl−Mg−Si系合金等を使用することになる。 As will be described later, the support plate 1 is subjected to surface oxidation treatment by means such as anodic oxidation in order to make the surface corrosion resistant, and alumite (oxide film such as Al 2 O 3 ) is formed on the surface. Therefore, as the support plate 1, an aluminum alloy suitable for surface treatment such as anodization is used. For example, as an international aluminum alloy name, an Al-Mg alloy of the 5000 series, an Al-Mg-Si alloy of the 6000 series, etc. are used.

この支持板1の所要の剛性を維持しながら肉薄化と軽量化を図る目的で、図1に示すように、その裏面にはリブ2が形成され、その間の部分は凹部9となっている。さらに、この支持板1の裏面中央には円筒形のリード線引出筒部6が立設されている。   For the purpose of reducing the thickness and weight while maintaining the required rigidity of the support plate 1, ribs 2 are formed on the back surface thereof and concave portions 9 are formed between the ribs as shown in FIG. 1. Further, a cylindrical lead wire drawing tube portion 6 is erected at the center of the back surface of the support plate 1.

支持板1の中には、ヒータ線3が配線され、このヒータ線3のリード線は前記リード線引出筒部6から電源側に引き出される。このヒータ線3の配線パターンは、例えば図1に示すようなものであるが、これは支持板1の加熱温度が全面にわたって出来るだけ均一になるようなパターンに設計して埋設する。支持板1の放熱量はその中心部より周辺部の大きいが、例えば中心部に前述のようなリード線引出筒部6が立設されているとそこからの放熱もある。これらのバランスが均衡するようにヒータ線3を配線することで、放熱板1の温度分布の均一性が得られるようなヒータ線3の配線パターンを採用する。   A heater wire 3 is wired in the support plate 1, and a lead wire of the heater wire 3 is drawn from the lead wire lead-out cylinder portion 6 to the power supply side. The wiring pattern of the heater wire 3 is, for example, as shown in FIG. 1, which is designed and embedded in a pattern in which the heating temperature of the support plate 1 is as uniform as possible over the entire surface. Although the heat radiation amount of the support plate 1 is larger in the peripheral portion than in the central portion, for example, when the lead wire drawing cylinder portion 6 as described above is erected in the central portion, there is also heat radiation from there. A wiring pattern of the heater wire 3 is employed so that the heater wire 3 is wired so that these balances are balanced, so that the uniformity of the temperature distribution of the heat sink 1 can be obtained.

このヒータ線3は例えばシーズヒータからなり、金属筒状のシースの中にタングステン、ニクロム、タンタル等の高融点金属からなる電熱線が収納され、これがシースの中に充填したマグネシア粉末等からなる無機絶縁材で絶縁されている。シーズヒータのシースは一般にステンレスが使用されるが、支持板1が前述のようなアルミニウム合金の場合、シースには同じようなアルミニウム合金のものを使用するのがよい。これにより、支持板1とヒータ線3との熱膨張率の違いによる熱応力を低減し、熱歪みによる支持板1の反りや曲がりを低減することが出来る。   The heater wire 3 is composed of, for example, a sheathed heater, and a heating wire made of a high melting point metal such as tungsten, nichrome, or tantalum is housed in a metal cylindrical sheath, and this is an inorganic material made of magnesia powder or the like filled in the sheath. Insulated with insulating material. The sheath of the sheathed heater is generally made of stainless steel. However, when the support plate 1 is made of an aluminum alloy as described above, it is preferable to use a similar aluminum alloy for the sheath. Thereby, the thermal stress by the difference in the thermal expansion coefficient of the support plate 1 and the heater wire 3 can be reduced, and the curvature and bending of the support plate 1 by a thermal strain can be reduced.

図3は支持板1のヒータ線3が埋設された部分の断面を示す。この図3に示したように、支持板1の裏面に蓋用溝12を設け、この蓋用溝12の底にヒータ用溝11を設け、このヒータ用溝11の中に前記のヒータ線3を埋め込んで装着する。   FIG. 3 shows a cross section of a portion of the support plate 1 where the heater wire 3 is embedded. As shown in FIG. 3, a lid groove 12 is provided on the back surface of the support plate 1, a heater groove 11 is provided at the bottom of the lid groove 12, and the heater wire 3 is placed in the heater groove 11. To be embedded.

このヒータ線3は支持板1の裏面側、すなわち図1に示した面側、図2において下面側に寄せて支持板1の中に埋設する。支持板1のヒータ線3が埋設された部分の断面を示した図3において表面である加熱面からヒータ線3までの深さ寸法d1と裏面からヒータ線3までの深さ寸法d2をd1>d2し、例えばd1:d2=3:2程度にとる。これにより支持板1の加熱面である表面側の温度分布を均一にすることが出来る。またプラズマCVD法により成膜工程を行う場合等において、支持板1の加熱面である表面側における成膜時の電位分布を均一にすることも出来る。   The heater wire 3 is embedded in the support plate 1 by moving toward the back surface side of the support plate 1, that is, the surface side shown in FIG. In FIG. 3 showing a cross section of a portion of the support plate 1 where the heater wire 3 is embedded, a depth dimension d1 from the heating surface to the heater wire 3 and a depth dimension d2 from the back surface to the heater wire 3 are d1>. For example, d2 is set to about d1: d2 = 3: 2. Thereby, the temperature distribution on the surface side which is the heating surface of the support plate 1 can be made uniform. Further, in the case where a film forming process is performed by a plasma CVD method, the potential distribution during film formation on the surface side, which is the heating surface of the support plate 1, can be made uniform.

支持板1には前記のヒータ線3に沿って同支持板1の剛性を補強するための補強部材4を埋め込む。補強部材4としては、支持板1に比べてより剛性が高いアルミニウム合金、例えば国際アルミニウム合金名として3000番台のAl−Mn系合金、或いはSi、Ni等の成分が比較的多いアルミニウム合金等を使用する。これを断面矩形等の長尺部材とし、前記ヒータ線3の直線部分に沿って溝に埋め込む。図3に示した実施例では補強部材4がヒータ線3と共にヒータ用溝11の中に埋め込まれることで、同補強部材4がヒータ線3に隣接してその直線部分に沿って支持板1の中に埋設されている。   A reinforcing member 4 for reinforcing the rigidity of the supporting plate 1 is embedded in the supporting plate 1 along the heater wire 3. As the reinforcing member 4, an aluminum alloy having higher rigidity than that of the support plate 1, for example, an Al-Mn alloy in the 3000 series as an international aluminum alloy name, or an aluminum alloy having relatively many components such as Si and Ni is used. To do. This is a long member having a rectangular cross section and the like, and is embedded in the groove along the straight portion of the heater wire 3. In the embodiment shown in FIG. 3, the reinforcing member 4 is embedded in the heater groove 11 together with the heater wire 3, so that the reinforcing member 4 is adjacent to the heater wire 3 along the straight portion of the support plate 1. It is buried inside.

蓋用溝12に蓋体7を嵌め込み、固定する。蓋体7は支持板1と同じ材質のアルミニウム合金からなり、その長さ、幅及び厚さは支持板1の裏面の蓋用溝12の長さ、幅及び深さに対応している。従って、蓋体7は支持板1の裏面の蓋用溝12の中に密に嵌め込まれる。この蓋体7はその縁が蓋用溝12の縁に溶接等の手段で接合される。例えば蓋体7と蓋用溝12の縁が摩擦攪拌接合(FSW:Friction Stir Welding)により溶接される。摩擦攪拌接合は先端に突起のある円筒状の工具を回転させながら強い力で押し付けることで突起部を接合させる母材である支持板1と蓋体12の接合部に圧接し、これによって摩擦熱を発生させて母材を軟化させるとともに、工具の回転力によって接合部周辺を塑性流動させて練り混ぜることで支持板1と蓋体12の接合部を一体化させる。摩擦攪拌溶接とも呼ばれる。これにより支持板1と蓋体12の接合部は不連続性が無いよう接合される。こうして溶接された支持板1と蓋体12の接合部は必要に応じて研磨されて溶接部の凹凸が平坦化され、支持板1と蓋体12とが面一とされる。   The lid body 7 is fitted into the lid groove 12 and fixed. The lid 7 is made of an aluminum alloy made of the same material as that of the support plate 1, and the length, width and thickness thereof correspond to the length, width and depth of the lid groove 12 on the back surface of the support plate 1. Therefore, the lid 7 is closely fitted in the lid groove 12 on the back surface of the support plate 1. The lid 7 is joined to the edge of the lid groove 12 by means such as welding. For example, the edges of the lid 7 and the lid groove 12 are welded by friction stir welding (FSW). In the friction stir welding, a cylindrical tool having a protrusion at the tip is rotated and pressed with a strong force to press against the joint between the support plate 1 and the cover 12 that are the base materials for joining the protrusion, thereby generating frictional heat. Is generated, and the base material is softened, and the joint portion between the support plate 1 and the lid 12 is integrated by plastic flow around the joint portion by the rotational force of the tool and kneading. Also called friction stir welding. Thereby, the junction part of the support plate 1 and the cover body 12 is joined so that there is no discontinuity. The joint between the support plate 1 and the lid 12 thus welded is polished as necessary to flatten the unevenness of the weld, and the support plate 1 and the lid 12 are flush with each other.

摩擦攪拌接合では支持板1と蓋体12とが一旦溶融して混合し、一体化するため、接合部における不連続性は無くなる。また、この摩擦攪拌接合では入熱を非常に小さくすることが出来、溶け込み深さを深く出来るので、支持板1と蓋体12との接合に最適である。大気中で溶接出来る利点もある。   In the friction stir welding, since the support plate 1 and the lid 12 are once melted, mixed, and integrated, there is no discontinuity at the joint. Further, in this friction stir welding, the heat input can be made extremely small and the penetration depth can be increased, so that it is optimal for joining the support plate 1 and the lid 12. There is also an advantage that it can be welded in the atmosphere.

その後、支持板1と蓋体7との全面にわたって表面処理し、耐蝕性化をする。例えば、支持板1と蓋体7とを形成するアルミニウム合金の表面を陽極として強酸中で水の電気分解により酸化させ、酸化被膜でコーティングするいわゆるアルマイト処理を行う。希硫酸やシュウ酸などを用いて支持板1と蓋体7とを形成するアルミニウム合金を陽極として電気分解することにより、支持板1と蓋体7の表面を電気化学的に酸化させて酸化アルミニウムAlの酸化皮膜を生成させる。既に述べた通り、この表面処理のため、前記の支持板1と蓋体7とは、陽極酸化による表面処理に適した国際アルミニウム合金名が5000番台のAl−Mg系合金や6000番台のAl−Mg−Si系合金等を使用する。 Thereafter, the entire surface of the support plate 1 and the lid 7 is subjected to surface treatment to make it corrosion resistant. For example, a so-called alumite treatment in which the surface of an aluminum alloy forming the support plate 1 and the lid 7 is oxidized by electrolysis of water in a strong acid and coated with an oxide film is performed. Aluminum oxide is formed by electrochemically oxidizing the surfaces of the support plate 1 and the lid 7 by diluting sulfuric acid, oxalic acid, or the like, using the aluminum alloy forming the support plate 1 and the lid 7 as an anode. An oxide film of Al 2 O 3 is generated. As described above, for this surface treatment, the support plate 1 and the lid body 7 are made of Al-Mg alloy having an international aluminum alloy name suitable for surface treatment by anodization in the order of 5000 or Al-Mg in the order of 6000. An Mg—Si alloy or the like is used.

図4は、本発明の他の実施例について前述した図3と同様に支持板1のヒータ線3が埋設された部分の断面を示している。この図4に示した実施例では、補強部材4がヒータ線3を埋設したヒータ用溝11の上を塞ぐように設けられ、この補強部材4が蓋用溝12に嵌め込まれた蓋体7の下面の溝の中に埋設されている。従って補強部材4はヒータ線3に隣接してそれより支持板1の裏面側に配置されている。   FIG. 4 shows a cross section of a portion of the support plate 1 where the heater wire 3 is embedded, as in FIG. 3 described above for another embodiment of the present invention. In the embodiment shown in FIG. 4, the reinforcing member 4 is provided so as to cover the heater groove 11 in which the heater wire 3 is embedded, and the reinforcing member 4 is inserted into the lid groove 12. It is buried in the groove on the lower surface. Therefore, the reinforcing member 4 is disposed adjacent to the heater wire 3 and on the back side of the support plate 1 therefrom.

図5は、本発明の他の実施例について前述した図3と同様に支持板1のヒータ線3が埋設された部分の断面を示している。この図5に示した実施例では、ヒータ線3を埋設したヒータ用溝11とは別にその両側に補強部材用溝13、13が設けられ、この補強部材用溝13、13の中に補強部材4、4が埋設されている。補強部材4、4はヒータ線3から若干離れているが、ヒータ線3に近い位置でそれに沿って配置されている。補強部材4はヒータ線3の片側のみに設けられていてもよい。   FIG. 5 shows a cross section of a portion of the support plate 1 where the heater wire 3 is embedded, as in FIG. 3 described above for another embodiment of the present invention. In the embodiment shown in FIG. 5, reinforcing member grooves 13 and 13 are provided on both sides separately from the heater groove 11 in which the heater wire 3 is embedded, and the reinforcing member is provided in the reinforcing member grooves 13 and 13. 4 and 4 are buried. The reinforcing members 4 and 4 are slightly separated from the heater wire 3, but are arranged along the heater wire 3 at a position close to the heater wire 3. The reinforcing member 4 may be provided only on one side of the heater wire 3.

本発明によれば、半導体ウエハ等の基板上に薄膜パターンを形成したり、あるいはその基板をエッチングする工程、さらには化学的気相堆積法(CVD法)等の手段でガラス基板等の基板上に薄膜を形成する工程において、基板を載せて加熱するのに好適な基板加熱プレートヒータを提供することが出来る。   According to the present invention, a thin film pattern is formed on a substrate such as a semiconductor wafer or the substrate is etched on a substrate such as a glass substrate by means of a chemical vapor deposition method (CVD method) or the like. In the step of forming a thin film, a substrate heating plate heater suitable for placing and heating the substrate can be provided.

本発明の一実施例による基板加熱プレートヒータを示す裏面図である。It is a back view which shows the board | substrate heating plate heater by one Example of this invention. 本発明の一実施例による基板加熱プレートヒータを示す側面図である。1 is a side view illustrating a substrate heating plate heater according to an embodiment of the present invention. 本発明の一実施例による基板加熱プレートヒータ支持板のヒータ線が埋設された部分の断面を示す要部断面図である。It is principal part sectional drawing which shows the cross section of the part by which the heater wire of the board | substrate heating plate heater support plate by one Example of this invention was embed | buried. 本発明の他の実施例による基板加熱プレートヒータ支持板のヒータ線が埋設された部分の断面を示す要部断面図である。It is principal part sectional drawing which shows the cross section of the part by which the heater wire of the board | substrate heating plate heater support plate by other Example of this invention was embed | buried. 本発明の他の実施例による基板加熱プレートヒータ支持板のヒータ線が埋設された部分の断面を示す要部断面図である。It is principal part sectional drawing which shows the cross section of the part by which the heater wire of the board | substrate heating plate heater support plate by other Example of this invention was embed | buried.

符号の説明Explanation of symbols

1 支持板
3 ヒータ線
4 補強部材
7 蓋体
1 Support Plate 3 Heater Wire 4 Reinforcing Member 7 Lid

Claims (3)

金属製の板体からなる支持板(1)と、この支持板(1)の中に埋設されたヒータ線(3)とを有する基板加熱プレートヒータにおいて、支持板(1)にヒータ線(3)に沿って同支持板(1)より剛性の高い補強部材(4)が埋め込まれ、この補強部材(4)が支持板(1)と同じ材質の蓋体(7)により覆われていることを特徴とする基板加熱プレートヒータ。 In a substrate heating plate heater having a support plate (1) made of a metal plate and a heater wire (3) embedded in the support plate (1), a heater wire (3 ), A reinforcing member (4) having a higher rigidity than that of the support plate (1) is embedded, and the reinforcing member (4) is covered with a lid (7) made of the same material as the support plate (1). A substrate heating plate heater characterized by. 蓋体(7)が支持板(1)のヒータ線(3)と補強部材(4)が埋め込まれた個所を覆うと共に、この蓋体(7)と支持板(1)との接合部が一体化されていることを特徴とする請求項1に記載の基板加熱プレートヒータ。 The lid (7) covers the portion of the support plate (1) where the heater wire (3) and the reinforcing member (4) are embedded, and the joint between the lid (7) and the support plate (1) is integrated. The substrate heating plate heater according to claim 1, wherein the substrate heating plate heater is formed. 蓋体(7)が支持板(1)に摩擦撹拌接合により溶接されていることを特徴とする請求項1または2に記載の基板加熱プレートヒータ。 The substrate heating plate heater according to claim 1 or 2, wherein the lid (7) is welded to the support plate (1) by friction stir welding.
JP2008286021A 2008-11-07 2008-11-07 Substrate heating plate heater Pending JP2010114280A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013184492A (en) * 2012-03-06 2013-09-19 Nippon Light Metal Co Ltd Method for joining member, join structure, cargo transport vehicle, and cargo transport container
WO2020196025A1 (en) * 2019-03-22 2020-10-01 株式会社Kokusai Electric Substrate treatment device, method for manufacturing semiconductor device, and substrate supporting tool and method for treating same
JP2021050366A (en) * 2019-09-20 2021-04-01 東京エレクトロン株式会社 Etching apparatus and etching method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004071172A (en) * 2002-08-01 2004-03-04 Mitsubishi Heavy Ind Ltd Heater, its manufacturing method and filming device
JP2005524968A (en) * 2001-08-01 2005-08-18 アプライド マテリアルズ インコーポレイテッド Substrate support and manufacturing method thereof
WO2006004045A1 (en) * 2004-07-05 2006-01-12 Tokyo Electron Limited Treating device and heater unit
JP2006183982A (en) * 2004-12-24 2006-07-13 Shintoshin Nikkei Kk Heating honeycomb core panel member
JP2007165068A (en) * 2005-12-13 2007-06-28 Nippon Dennetsu Co Ltd Thermo-plate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005524968A (en) * 2001-08-01 2005-08-18 アプライド マテリアルズ インコーポレイテッド Substrate support and manufacturing method thereof
JP2004071172A (en) * 2002-08-01 2004-03-04 Mitsubishi Heavy Ind Ltd Heater, its manufacturing method and filming device
WO2006004045A1 (en) * 2004-07-05 2006-01-12 Tokyo Electron Limited Treating device and heater unit
JP2006183982A (en) * 2004-12-24 2006-07-13 Shintoshin Nikkei Kk Heating honeycomb core panel member
JP2007165068A (en) * 2005-12-13 2007-06-28 Nippon Dennetsu Co Ltd Thermo-plate

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013184492A (en) * 2012-03-06 2013-09-19 Nippon Light Metal Co Ltd Method for joining member, join structure, cargo transport vehicle, and cargo transport container
WO2020196025A1 (en) * 2019-03-22 2020-10-01 株式会社Kokusai Electric Substrate treatment device, method for manufacturing semiconductor device, and substrate supporting tool and method for treating same
JPWO2020196025A1 (en) * 2019-03-22 2021-12-09 株式会社Kokusai Electric Substrate processing equipment, semiconductor device manufacturing methods, substrate supports, and their processing methods
US20220005712A1 (en) * 2019-03-22 2022-01-06 Kokusai Electric Corporation Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Method of Processing Substrate Support
JP7394115B2 (en) 2019-03-22 2023-12-07 株式会社Kokusai Electric Substrate processing equipment, semiconductor device manufacturing method, substrate support, and processing method thereof
US12451375B2 (en) * 2019-03-22 2025-10-21 Kokusai Electric Corporation Substrate processing apparatus, method of manufacturing semiconductor device and method of processing substrate support
JP2021050366A (en) * 2019-09-20 2021-04-01 東京エレクトロン株式会社 Etching apparatus and etching method
JP7379993B2 (en) 2019-09-20 2023-11-15 東京エレクトロン株式会社 Etching equipment and etching method

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