JP2010171169A - Semiconductor module, and control method thereof - Google Patents

Abstract

A high-density semiconductor module capable of appropriately controlling a temperature rise is provided.
A stacked structure in which a lower layer chip and an upper layer chip are stacked is mounted on a lead frame made of copper or the like having high thermal conductivity. Similarly, a laminated structure in which the lower layer chip 13 and the upper layer chip 14 are laminated is mounted on the lead frame 15. A control circuit chip 16 is mounted between these two laminated structures. A temperature sensor 30 is mounted inside the upper surface of the lower layer chips 11 and 13 (the side where the control circuit chip 16 is present). A temperature sensor 30 is installed on the wiring serving as a current path.
[Selection] Figure 1

Description

  The present invention relates to a configuration of a semiconductor module configured by mounting a plurality of semiconductor chips and a control method thereof.

  For example, a high voltage of several hundred volts or more may be required to drive a car lamp or the like. For this reason, a semiconductor module in which a power supply circuit for generating this high voltage is formed is used for driving the lamp. An example of the circuit configuration of this semiconductor module is shown in FIG. The power supply circuit 90 is a full bridge circuit using four IGBTs (Insulated Gate Bipolar Transistors) 91 to 94. In addition, a control circuit 95 for controlling the whole is connected, and the circuit operation can be disconnected in an emergency. The outputs of this semiconductor module are taken out from the two OUT terminals in FIG. In the following, the configuration shown in the drawing in which a built-in diode is connected between the collector and emitter of a normal IGBT is called an IGBT.

  Each component (IGBT or the like) constituting the circuit configuration of FIG. 5 is mounted on a lead frame made of copper and enclosed in a package to constitute a semiconductor module. In order to reduce the size of this semiconductor module, it is necessary to mount each component with high density. For this. For example, Patent Document 1 describes a semiconductor module that is densified by stacking components (chips) on a lead frame.

  On the other hand, as described above, high voltage and large current are used in such a semiconductor module. However, for example, when an overcurrent flows through the IGBT or the like, the IGBT itself is not damaged, but the overcurrent flows through the lamp 100 and the lamp 100 may be damaged. In order to suppress such a situation, Patent Document 2 discloses a configuration in which a temperature sensor and a thermal overload protection circuit are formed in advance in the lower layer chip of the multilayer chip as in the case of the transistor. In this configuration, when the lower layer chip generates heat due to overcurrent, the temperature is detected and the operation can be automatically stopped.

  With this configuration, a high-power and high-density semiconductor module that does not supply overcurrent to the load (lamp) can be obtained.

JP 2000-164800 A Japanese Patent No. 4014652

  However, the temperature directly detected in the structure described in Patent Document 2 is the temperature in the lower chip. Further, the place where the temperature sensor is arranged in the lower chip is limited because it is influenced by the layout of each element (IGBT, etc.) and the thermal overload protection circuit in the chip. Therefore, there is no degree of freedom at the place where the temperature sensor is installed, and it is actually difficult to place the temperature sensor at the place where the temperature rises the most.

  Therefore, it has been difficult to obtain a high-density semiconductor module that can appropriately control the temperature rise.

  The present invention has been made in view of such problems, and an object thereof is to provide an invention that solves the above problems.

In order to solve the above problems, the present invention has the following configurations.
The semiconductor module of the present invention is a semiconductor module having a configuration in which a laminated structure in which an upper layer chip on which a semiconductor element is formed is laminated on a lower layer chip on which a semiconductor element is formed is disposed on a substrate, A temperature sensor is installed on the current path on the laminated structure on the center side of the semiconductor module.
In the semiconductor module of the present invention, the temperature sensor is installed on the lower layer chip.
In the semiconductor module of the present invention, the temperature sensor is installed on the upper layer chip.
In the semiconductor module of the present invention, a plurality of the laminated structures are installed on the substrate.
The semiconductor module of the present invention is characterized in that two or more of the stacked structures and other semiconductor chips are installed on the substrate.
The semiconductor module of the present invention is characterized in that another semiconductor chip is arranged between the two stacked structures and placed on the substrate.
In the semiconductor module of the present invention, a control circuit for controlling the operation of the semiconductor module is formed on the other semiconductor chip, and an output of the temperature sensor is connected to the control circuit.
The semiconductor module of the present invention comprises a terminal for taking out an output signal from the temperature sensor to the outside of the semiconductor module.
In the semiconductor module of the present invention, a half-bridge circuit is formed by the semiconductor element of the lower layer chip and the semiconductor element of the upper layer chip.
The method for controlling a semiconductor module according to the present invention controls a semiconductor module having a structure in which a laminated structure in which an upper layer chip on which a semiconductor element is formed is laminated on a lower layer chip on which the semiconductor element is formed is disposed on a substrate. A method is characterized in that, on the center side of the semiconductor module, a temperature sensor is installed on the current path on the stacked structure, and the operation of the semiconductor module is cut off based on the output of the temperature sensor. .
In the method for controlling a semiconductor module of the present invention, a control circuit for controlling the operation of the semiconductor module is formed, and another semiconductor chip having the output of the temperature sensor connected to the control circuit is placed on the substrate, and the control is performed. A circuit cuts off the operation of the semiconductor module.

  Since the present invention is configured as described above, it is possible to obtain a high-density semiconductor module capable of appropriately controlling the temperature rise appropriately.

It is the top view (a) and sectional drawing (b) which show the structure of the semiconductor module which concerns on embodiment of this invention. It is a perspective view which expands and shows the structure of the temperature sensor vicinity in the semiconductor module which concerns on embodiment of this invention. It is a perspective view which shows the modification of the semiconductor module which concerns on embodiment of this invention. It is a top view which shows the other modification of the semiconductor module which concerns on embodiment of this invention. It is a figure which shows an example of a structure of a power supply circuit.

  Hereinafter, a semiconductor module which is the best mode for carrying out the semiconductor device manufacturing method of the present invention will be described. In this semiconductor module, two sets of stacked structures in which semiconductor chips are stacked are disposed, and a control circuit chip, which is another semiconductor chip, is disposed between these stacked structures.

  FIG. 1A is a top view of a configuration of a semiconductor module 10 according to an embodiment of the present invention, and FIG. 1B is a cross-sectional view in the II direction. Actually, the semiconductor module 10 having this structure is enclosed in a mold material in a package, but the description of the package and the mold material is omitted here.

  In addition, the circuit configuration of the semiconductor module 10 includes a circuit within a range surrounded by a broken line in FIG. That is, the IGBTs 91 to 94 and the control circuit 95 are included, and a full bridge circuit using the IGBTs 91 to 94 is configured. Here, on a lead frame (substrate) 15 composed of copper or the like having high thermal conductivity, a lower layer chip 11 incorporating a high-side (high potential side) IGBT 91 and an upper layer incorporating a low-side (low potential) IGBT 92. A stacked structure in which the chips 12 are stacked is mounted. Similarly, a laminated structure in which a lower layer chip 13 incorporating a high side IGBT 93 and an upper layer chip 14 incorporating a low side (low potential) IGBT 94 are laminated on the lead frame 15. In addition, a control circuit chip (another semiconductor chip) 16 incorporating a control circuit 95 is mounted between these two stacked structures. Note that the lead frame (substrate) 15 and the lower layer chips 11 and 13 and the lower layer chips 11 and 13 and the upper layer chips 12 and 14 are joined to each other by a solder layer. Further, the lead frame (substrate) 15 and the control circuit chip 16 are joined by an insulating adhesive. However, the description of these bonding layers is omitted in FIG.

  Electrical connection between these chips mounted on the lead frame 15 is made by bonding wires (for example, 38 μmφ gold wires) 21 connected between a plurality of pads 20 formed on the upper surface of each chip. This circuit is configured. However, these connections at connection point A (connection point between the emitter of IGBT 91 and collector of IGBT 92) and connection point B (connection point between the emitter of IGBT 93 and collector of IGBT 94) in FIG. It is performed by the solder layer between and the solder layer between the lower layer chip 13 and the upper layer chip 14. The pads connected to the OUT terminal in FIG. 5 are the pads 201 that are two of the pads 20, and the pads connected to the collector of the IGBT 91 (connection point C) and the collector of the IGBT 93 (connection point D) are: The pads 203 are two of the pads 20. In addition, although the pads 201 and 203 in FIG. 1 have a triangular shape disposed at the corners of the chip, the pads are not limited to this, and may be disposed in other portions, for example, a rectangular shape.

  Also, the input / output of this semiconductor module is connected to the outside by the pads 20 and a plurality of terminals 22 formed on the package (not shown) outside the above-described configuration being similarly connected by bonding wires 21. It becomes the composition which is done. For example, in the case where a large current flows, as in the case of connection to the pads 201 and 203, two or more bonding wires 21 are used in parallel instead of one to connect the pad 20 and the terminal 22. be able to. Further, a package (not shown) is an SOP (Small Outline Package) in which a plurality of leads are taken out on both the upper and lower sides in FIG. 1A and the lower surface of the lead frame 15 in FIG. 1B is exposed. ing. Note that heat radiation terminals 23 are directly joined to the four corners of the lead frame 15 for heat radiation.

  In the semiconductor module 10, the temperature sensor 30 is mounted on the inner side (the side where the control circuit chip 16 is present) on the upper surfaces of the lower layer chips 11 and 13. The temperature sensor 30 is composed of a diode, for example, and can detect the temperature based on a voltage change caused by a temperature change. Accordingly, the temperature sensor 30 is provided with two terminals, and is connected to the terminal 221 included in the terminal 22 via the pad 202 included in the pad 20 and the bonding wire 21 as described above. Thereby, the temperature detected here also becomes one of the outputs of this semiconductor module, and this temperature can be recognized from the outside.

  FIG. 2 is an enlarged perspective view showing in detail the configuration of the part surrounded by the broken line in FIG. 1A in the structure of FIG. Here, a wiring 41 indicated by a dotted line from the pad 201 is formed in the lower layer chip 11 and connected to the emitter (A) of the IGBT 91. That is, a large current flows from the pad 201 through the wiring 41 to the emitter (A) of the IGBT 91 in FIG. The temperature sensor 30 is installed on the wiring 41 serving as the current path.

  Further, the connection between the two terminals of the temperature sensor 30 and the pad 202 is also made through the wiring 42 formed in or on the lower layer chip 11 as shown in FIG. Alternatively, the bonding wire 21 may be directly connected to the temperature sensor 30 itself. The structure shown in FIG. 2 is the same for the lower layer chip 13 and the upper layer chip 14.

  In this configuration, the temperature sensor 30 can measure the temperature immediately above a portion (wiring 41) where a large current flows in the lower layer chips 11 and 13. That is, the temperature sensor 30 can measure the temperature at the highest temperature in the laminated structure.

  Further, this heat is radiated from the lead frame 15 having high thermal conductivity through the solder layer, and further radiated through the terminals 23 at the four corners of the lead frame 15. Further, heat is radiated from the package through the molding material. At this time, as described above, since the semiconductor module has a symmetrical shape in FIG. 1, the heat radiation efficiency at both ends thereof is high, and is low at the center. Accordingly, the temperature distribution is high in the center and low in both sides. Therefore, the temperature sensor 30 can measure the temperature at the highest temperature in the semiconductor module 10.

  On the other hand, in the structure described in Patent Document 2, although a temperature sensor is similarly used, since the temperature sensor is formed in the semiconductor chip in the same manner as the semiconductor element, the installation location (temperature measurement location) is free. There is no degree. Alternatively, it is impossible to change the installation location after manufacturing the semiconductor chip.

  Therefore, in this semiconductor module 10, it is possible to appropriately detect a temperature rise and perform appropriate control based on this temperature. Therefore, this semiconductor module can be used safely. At this time, since the lower layer chip and the upper layer chip are laminated, the semiconductor module can be made high density.

  Further, the output from the temperature sensor 30 can be connected to the control circuit chip 16 by the pad 20 and the bonding wire 21 as described above, and this control can be performed by the control circuit 95. In this case, this control is automatically performed in the semiconductor module. That is, in this semiconductor module, the control of turning off the operation based on the output of the temperature sensor 30 can be performed outside the semiconductor module or inside the semiconductor module.

  In addition to the configuration of FIG. 1, the position of the temperature sensor 30 can be changed as appropriate according to the layout of the chip. FIG. 3 is a diagram showing an example of a configuration other than that shown in FIG. In this example, the temperature sensor 30 is formed not on the lower layer chip 11 but on the upper layer chip 12. Also in this case, the temperature sensor 30 is installed immediately above and inside the current path (wiring 41) (on the right side in FIG. 3), and the output is taken out to the outside.

  Further, for example, when six IGBTs are used, for example, when three half bridge circuits are used, or when one full bridge circuit and one half bridge are used, the top view is shown in FIG. As described above, the upper layer chips 54 to 56 each including the low side IGBT are stacked on the lower layer chips 51 to 53 including the high side IGBT, and the control circuit chips 57 are included in the vertical and horizontal rows on the lead frame 58. Arranged. Also in this case, the temperature sensor 30 can be similarly installed inside the upper surface of the lower layer chips 51 to 53. In FIG. 4, description of pads, bonding wires, terminals, wirings, and the like is omitted.

  In the configurations of FIGS. 3 and 4 as well, the above point that temperature rise can be appropriately detected and appropriate control can be performed based on this temperature is the same.

  In the above example, the temperature sensor 30 is installed immediately above the current path (wiring 41). However, the temperature sensor 30 is not limited to this from the viewpoint of appropriately sensing the temperature at the location where the temperature is high. It can also be installed near the route.

  In the above example, the case where a copper lead frame is used as the substrate has been described. However, the present invention is not limited to this, and for example, an insulating ceramic substrate or the like can be used.

  In the above example, an example using a stacked structure in which a chip on which an IGBT is formed is a lower layer chip and an upper layer chip is described, but the present invention is not limited to this. For example, it is obvious that chips formed of other semiconductor elements such as power MOSFETs, power diodes, and the like that are driven by a large current can be similarly stacked. In this case, the same configuration can be applied to circuits other than the power supply circuit shown in FIG.

10 Semiconductor module 11, 13, 51-53 Lower layer chip 12, 14 54-56 Upper layer chip 15 Lead frame (substrate)
16 Control circuit chip (other semiconductor chips)
20, 201, 202, 203 Pad 21 Bonding wire 22, 221 Terminal 23, Radiation terminal 30 Temperature sensor 41, 42 Wiring 90 Power supply circuit 91-94 Insulated gate bipolar transistor (IGBT)
95 Control circuit 100 Lamp

Claims (11)

A semiconductor module having a configuration in which a stacked structure in which an upper layer chip on which a semiconductor element is formed is stacked on a lower layer chip on which a semiconductor element is formed is installed on a substrate,
A semiconductor module, wherein a temperature sensor is installed on a current path on the laminated structure at a center side of the semiconductor module.   The semiconductor module according to claim 1, wherein the temperature sensor is installed on the lower layer chip.   The semiconductor module according to claim 1, wherein the temperature sensor is disposed on the upper layer chip.   The semiconductor module according to claim 1, wherein a plurality of the laminated structures are installed on the substrate.   The semiconductor module according to claim 4, wherein two or more of the stacked structures and another semiconductor chip are installed on the substrate.   The semiconductor module according to claim 4, wherein another semiconductor chip is arranged between the two stacked structures and disposed on the substrate.   7. The control circuit for controlling the operation of the semiconductor module is formed in the other semiconductor chip, and the output of the temperature sensor is connected to the control circuit. 2. The semiconductor module according to item 1.   The semiconductor module according to any one of claims 1 to 7, further comprising a terminal for taking out an output signal from the temperature sensor to the outside of the semiconductor module.   The semiconductor module according to claim 1, wherein a half-bridge circuit is configured by the semiconductor element of the lower layer chip and the semiconductor element of the upper layer chip. A method for controlling a semiconductor module comprising a configuration in which a laminated structure in which an upper layer chip on which a semiconductor element is formed is laminated on a lower layer chip on which a semiconductor element is formed is provided on a substrate,
On the center side of the semiconductor module, a temperature sensor is installed on the current path on the stacked structure,
A method of controlling a semiconductor module, wherein the operation of the semiconductor module is cut off based on the output of the temperature sensor. A control circuit for controlling the operation of the semiconductor module is formed, and another semiconductor chip in which the output of the temperature sensor is connected to the control circuit is installed on the substrate,
The method of controlling a semiconductor module according to claim 10, wherein the control circuit blocks the operation of the semiconductor module.

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