JP2010027210A - Manufacturing method of light-emitting element, and light-emitting element - Google Patents

Abstract

An object of the present invention is to prevent the adsorption of dust and floating substances from the outside onto an organic layer and improve the reliability of an organic light emitting device.
An organic light emitting device includes a substrate, a plurality of pixels formed on the substrate, and an auxiliary electrode formed between the plurality of pixels. In addition, each pixel includes, in order from the substrate 1 side, a lower electrode 2 provided separately from each pixel, an organic compound layer 5 including a light emitting layer, and an upper electrode provided in common across a plurality of pixels. And have. The manufacturing method of an organic light emitting device has the following four steps. A step of forming an organic compound layer 5 on the lower electrode 2 and the auxiliary electrode 3. A step of commonly forming the first upper electrode 6 across the plurality of pixels on the surface of the organic compound layer 5. A step of partially removing the organic compound layer 5 and the first upper electrode 6 to expose the auxiliary electrode 3. A step of forming the second upper electrode 7 in common across the plurality of pixels on the first upper electrode 6 and the auxiliary electrode 3.
[Selection] Figure 1

Description

  The present invention relates to a method for manufacturing an organic light emitting device including an organic light emitting layer and an organic light emitting device.

  An organic EL element using electroluminescence (hereinafter referred to as EL) of an organic material has attracted attention as a light emitting element capable of high luminance light emission and low voltage driving.

  The organic EL element is configured by laminating a hole transport layer, a light emitting layer, an electron transport layer, or the like made of a low molecule or a polymer between two electrodes. As a driving method of such an organic EL element, a simple matrix type and an active matrix type can be mentioned.

  In an active matrix display device, a thin film transistor is provided in each pixel on a substrate and is covered with an interlayer insulating film. A lower electrode patterned on each pixel in a state of being connected to the thin film transistor; an organic compound layer formed on the lower electrode; and a second upper electrode formed on the organic compound layer as common to all pixels. Have. In such an active matrix display device, in order to secure the aperture ratio of the organic EL element, a so-called top emission type configuration in which light is extracted from the side opposite to the substrate is effective.

  In the case of a top emission type configuration, the second upper electrode is made of a transparent or translucent material, but since the resistance value is high, a voltage gradient is generated in the second upper electrode, causing a voltage drop. The display performance is significantly deteriorated, such as uneven light emission.

  Therefore, a method has been proposed in which an auxiliary electrode is provided to conduct with the second upper electrode to prevent a voltage drop. However, when the auxiliary electrode is provided, if the organic film that is the common layer is formed on the entire surface of the element without using the film formation mask, the organic film is also formed on the auxiliary electrode, and the second upper electrode. When the is formed, the conduction between the second upper electrode and the auxiliary electrode may be deteriorated.

  Further, even when the organic compound layer is formed using the film formation mask, the organic compound layer may be formed on the auxiliary electrode if the alignment accuracy of the film formation mask and the processing accuracy of the opening are poor. .

  In order to solve such problems, a technique of selectively removing the organic film on the auxiliary electrode by laser irradiation, forming a second upper electrode, and electrically joining the second upper electrode and the auxiliary electrode Has been proposed (see Patent Document 1).

JP 2005-11810 A

  However, in the method described in Patent Document 1, when the organic compound layer on the auxiliary electrode is removed, the organic compound layer on the auxiliary electrode is removed with a laser after forming the organic compound layer. The removal process is performed with the layer exposed. For this reason, there is a problem that contamination due to dust or the like is generated during the movement of the chamber, and the display performance is remarkably deteriorated because the removed organic compound layer adheres on the electron transport layer.

  The present invention has been proposed in order to cope with the above-described problems. When the organic compound layer on the auxiliary electrode is removed, the influence of scattered matter that causes dust and the like is suppressed, and light emission unevenness is high. It aims at providing the manufacturing method of a quality organic light emitting element.

  In order to achieve the above-described object, the method for producing an organic light emitting device of the present invention has the following features. That is, an organic light emitting device manufactured by the method for manufacturing an organic light emitting device of the present invention includes a substrate, a plurality of pixels formed on the substrate, and an auxiliary electrode formed between the plurality of pixels. ing. Each pixel has a lower electrode provided for each pixel in order from the substrate side, an organic compound layer including a light emitting layer, and an upper electrode provided in common across a plurality of pixels. is doing.

  And the manufacturing method of the organic light emitting element of this invention has the following four processes, It is characterized by the above-mentioned. The first step is a step of forming an organic compound layer on the lower electrode and the auxiliary electrode. The second step is a step of commonly forming the first upper electrode across the plurality of pixels on the surface of the organic compound layer. The third step is a step of partially removing the organic compound layer and the first upper electrode to expose the auxiliary electrode. The fourth step is a step of forming the second upper electrode in common across the plurality of pixels on the first upper electrode and the auxiliary electrode.

  According to the method for manufacturing an organic light emitting device of the present invention, since the electrode material is formed on the organic compound layer, the organic compound layer is protected when the organic compound layer on the auxiliary electrode is removed, and deterioration or dust is removed. Adhesion can be prevented. Further, the voltage drop of the upper electrode can be suppressed, and the light emission intensity of the organic light emitting layer in each pixel can be maintained.

  First, an outline of an organic light emitting device and a manufacturing method thereof according to an embodiment of the present invention will be described.

  An organic light emitting device according to an embodiment of the present invention includes a substrate, a plurality of pixels formed on the substrate, and an auxiliary electrode formed between the plurality of pixels. Each pixel has, in order from the substrate side, a lower electrode provided for each pixel, an organic compound layer including a light emitting layer, and an upper electrode provided in common across a plurality of pixels. Yes. Further, the upper electrode has a first upper electrode and a second upper electrode in this order on the organic compound layer, and the thickness of the first upper electrode is not less than 5 nm and not more than 200 nm.

  In an organic light emitting device having such a configuration, the use of an electrode with an appropriate thickness can protect the organic compound layer and prevent the influence of contamination, thus effectively suppressing the voltage drop of the upper electrode. can do.

  The manufacturing method of the organic light emitting element according to the embodiment of the present invention includes the following four steps. In the first step, an organic compound layer is formed on the lower electrode and the auxiliary electrode. In the second step, the first upper electrode is formed in common across the plurality of pixels on the surface of the organic compound layer. In the third step, the organic compound layer and the first upper electrode are partially removed to expose the auxiliary electrode. In the fourth step, the second upper electrode is formed in common across the plurality of pixels on the first upper electrode and the auxiliary electrode. Here, in the third step, the energy beam is partially applied to the auxiliary electrode. In such a method for manufacturing an organic light emitting device, by partially applying an energy beam to the auxiliary electrode, it is possible to shorten the tact time of the auxiliary electrode exposure process and improve productivity.

<Method for producing organic EL element>
Next, a schematic configuration of the organic light emitting device according to the embodiment of the present invention will be described. In the following embodiments, an organic EL element will be described as an organic light emitting element, but the present invention can also be applied to other organic light emitting elements having an electrode and auxiliary electrode structure.

  FIG. 1 is a schematic cross-sectional view of an organic EL element according to an embodiment of the present invention. The organic EL element according to the embodiment of the present invention is formed corresponding to each pixel portion. That is, the organic EL element according to the embodiment of the present invention is configured by laminating the lower electrode 2, the organic compound layer 5, the first upper electrode 6, and the second upper electrode 7 on the substrate 1.

  In addition, the organic compound layer 5 and the first upper electrode 6 on the auxiliary electrode 3 formed between the pixels are removed, and the second upper electrode 7 and the auxiliary electrode 3 are in contact with each other and are in a conductive state. . The present invention is characterized in that the organic compound layer 5 and the first upper electrode 6 on the auxiliary electrode 3 are removed. The first upper electrode 6 may be a single layer or a plurality of layers.

  As will be described in detail later, the organic EL element of the present embodiment is formed after the organic compound layer 5 is formed in a state where the lower electrode 2 and the auxiliary electrode 3 are formed, and at least one first upper electrode 6 is formed. Irradiate an energy beam. Thereby, the organic compound layer 5 on the auxiliary electrode 3 and at least one or more first upper electrodes 6 are removed by thermal peeling.

  In addition, when removing the organic compound layer 5 and the first upper electrode 6, a light absorption layer that absorbs a specific wavelength and generates heat may be formed on at least one of the upper and lower sides of the auxiliary electrode 3. By doing so, light can be more efficiently converted into heat, and the organic compound layer 5 and the first upper electrode 6 on the auxiliary electrode 3 can be removed.

<Method for producing organic EL element>
Next, a method for manufacturing an organic EL element according to an embodiment of the present invention will be described. In the following description, the process of forming the lower electrode 2 will be described. However, in the case of an active matrix display element, it is assumed that a thin film transistor is formed in each pixel on the substrate 1.

  FIG. 2 is a schematic cross-sectional view showing a method for manufacturing an organic EL element according to an embodiment of the present invention, and FIGS. 3 to 6 are schematic plan views of the organic EL element according to the embodiment of the present invention.

<Lower electrode and auxiliary electrode formation process>
In the method for manufacturing an organic EL element according to the embodiment of the present invention, first, the lower electrode 2 is patterned on the substrate 1.

  The lower electrode 2 is used as an anode electrode or a cathode electrode. In the case of a top emission type, the lower electrode 2 is formed of a material having a high reflectance with respect to visible light, and in the case of a bottom emission type. It is transparent to visible light. When used as an anode electrode with a top emission type, as an electrode of an organic EL element such as a conductive material having high reflectivity with respect to visible light such as Ag, Al, Au, and its alloy, ITO, IZO, ZnO, etc. Known materials can be used. In addition, ITO is “Indium Tin Oxide”, and IZO is “Indium Zinc Oxide”. Further, when the lower electrode 2 is used as a cathode electrode in the top emission type, the lower electrode 2 is a conductive material having a low work function such as Al, In, Mg, and an Ag alloy and has a high reflectance with respect to visible light. Formed of things.

  When the bottom electrode 2 is used as an anode electrode in the bottom emission type, the lower electrode 2 is formed of a conductive material having a high transmittance with respect to visible light, such as ITO or IZO. Further, when the lower electrode 2 is used as a cathode electrode in the bottom emission type, the lower electrode 2 is formed of a conductive material having a small work function and high transmittance for visible light.

  Here, a light absorption layer may be formed below the auxiliary electrode 3. As the light absorption layer, a material that can efficiently absorb laser light having a predetermined wavelength may be used, and Cr, Mo, W, and the like are preferable.

  As the auxiliary electrode 3, a low-resistance conductive material such as Al, Cr, or an alloy thereof can be used as a single layer or a laminated layer.

  The lower electrode 2 and the auxiliary electrode 3 on the substrate 1 may be collectively formed in the same process.

  As shown in FIG. 3, the auxiliary electrode 3 may be formed in a lattice shape between pixels, or may be in a stripe shape as shown in FIG. 4, or intermittently as shown in FIG. And it may be connected to the auxiliary power line in the lower layer.

<Insulating film formation process>
Next, as shown in FIG. 2A, the insulating layer 4 is formed so as to cover the edge of the lower electrode 2. For example, after the insulating layer 4 is formed, the lower electrode 2 is exposed by photolithography to form a pixel region. The insulating layer 4 may be formed using a coating method. For the insulating layer 4, for example, an organic insulating material such as polyimide or photoresist or an inorganic insulating material such as silicon oxide can be used.

<Organic compound layer forming step>
Thereafter, the organic compound layer 5 including the light emitting layer is sequentially formed on the lower electrode 2 of each pixel. The organic compound layer 5 is formed so as to completely cover the exposed surface of the lower electrode 2.

  The organic compound layer 5 may have a layer having functions such as a hole transport layer, an electron transport layer, and an electron injection layer (not shown) in addition to the light emitting layer, if necessary. A known material can be used for each layer of the organic compound layer 5.

  The present invention can also be applied to other types of light-emitting elements. For example, the present invention can also be applied to a light-emitting element in which a common layer is formed over the entire surface without a mask and a light-emitting layer is separately applied as R (red), G (green), B (blue), and W (white). The present invention can also be applied to a display element in which a white element having a plurality of emission peaks is formed, or a tandem organic EL element in which a plurality of organic compound layer units having a light emitting layer are stacked.

  In this embodiment, in order to simplify the description, a case where a solid organic film including a monochromatic light emitting layer is formed will be described.

<First upper electrode forming step>
Further, as shown in FIG. 2B, the first upper electrode 6 is formed on the organic compound layer 5. At this time, the first upper electrode 6 is continuously formed in the same apparatus as the organic compound layer 5 to prevent deterioration of the organic compound layer 5.

  The conductive material preferably has a small work function and is transparent to visible light so that electrons can be efficiently injected into the organic compound layer 5. For example, a known material such as ITO or IZO is used as the electrode material of the organic EL element.

  The film thickness of the first upper electrode 6 is desirably 5 nm or more because it is affected by contamination if it is too thin. On the other hand, if the thickness is too thick, the absorption of light emission increases, and the influence of contamination on the removed organic compound layer 5 and the first upper electrode 6 becomes large. Furthermore, it is more desirable to be thinner than 100 nm.

<Auxiliary electrode exposure process>
Next, as shown in FIG. 2C, the energy beam 8 is irradiated onto the auxiliary electrode 3 from the surface of the substrate 1. For example, an infrared laser having a wavelength of 810 nm is irradiated using a semiconductor CW laser to peel off and remove the organic compound layer 5 and the first upper electrode 6 formed on the auxiliary electrode 3.

  As the energy beam, it is sufficient that the organic compound layer 5 and the first upper electrode 6 on the auxiliary electrode 3 can be removed by ablation phenomenon, sublimation, or the like. Lasers having wavelengths from the infrared region to the ultraviolet region, ions using Ga or Ar A beam, an electron beam, or the like is used.

  Further, the substrate 1 may be irradiated with an energy beam from the back surface of the substrate 1 by using a transparent material such as glass. In this case, light having a wavelength that can be absorbed by the auxiliary electrode 3 or the light absorption layer is used as the energy beam.

  In addition, by providing a precise alignment mechanism in the irradiation device, it is possible to irradiate a proper spot along the auxiliary electrode 3 with a laser.

  When there is no alignment mechanism, a mask is used, or a light shielding film serving as a mask is formed on the back surface of the substrate 1 so that the energy beam is transmitted only on the auxiliary electrode 3. Thereby, an energy beam can be irradiated without precise alignment.

  The step of removing the organic compound layer 5 and the first upper electrode 6 by the energy beam is possible even under atmospheric pressure, but it is preferable to perform it in a vacuum. By performing in vacuum, the organic compound layer 5 and the first upper electrode 6 can be removed with lower energy than in atmospheric pressure, and adverse effects on the surroundings can be further reduced.

  Furthermore, the application of the energy beam may be continuous along the auxiliary electrode 3 or may be partial.

<Second upper electrode forming step>
As described above, after forming the organic compound layer 5 and the first upper electrode 6 and removing the organic compound layer and the first upper electrode 6 on the auxiliary electrode 3, as shown in FIG. (2) The upper electrode 7 is formed on the entire surface by solidification.

  At this time, the auxiliary electrode 3 exposed in the above-described process and the second upper electrode 7 are connected. However, the second upper electrode 7 is insulated from the lower electrode 2 by the organic compound layer 5 and the insulating layer 4.

  Since the second upper electrode 7 is used as an anode electrode or a cathode electrode, when it is a top emission type, it is formed to be transparent or translucent to visible light, and when it is a bottom emission type, it is visible light. On the other hand, it is made of a highly reflective material.

  In the present embodiment, the organic EL display element is a top emission type, and the lower electrode 2 is used as an anode electrode. Therefore, the second upper electrode 7 is used as a cathode electrode. In this case, it is preferable that the second upper electrode 7 has a small work function and is transparent to visible light so that electrons can be efficiently injected into the organic compound layer 5. As the material of the second upper electrode 7, a suitable material such as an Mg—Ag alloy is used.

  When the display element is a bottom emission type and the second upper electrode 7 is used as a cathode electrode, the display element is made of a conductive material having a small work function and a high reflectance with respect to visible light.

  Furthermore, when the display element is a bottom emission type and the second upper electrode 7 is used as an anode electrode, the display element is made of a conductive material having a high reflectance with respect to visible light.

<Protective layer forming step>
Finally, although not shown, a protective layer is formed on the second upper electrode 7.

  At this time, the protective layer is formed by a method in which the energy of the film-forming particles is small enough not to affect the base.

  In addition, the formation of the protective layer without exposure to the atmosphere prevents the organic compound layer 5 from being deteriorated by moisture or oxygen in the atmosphere. This protective layer may be formed of a moisture-proof material with a sufficient film thickness for the purpose of preventing contact of moisture and oxygen with the organic compound layer 5.

  In the top emission type, this protective layer also uses a material having a high transmittance with respect to visible light. For example, amorphous silicon, silicon carbide, silicon nitride, or the like can be preferably used. In film formation, it is desirable that the film formation temperature be close to room temperature and film formation be performed under a condition where film stress is small.

<Examples of different types of auxiliary electrodes>
As shown in FIG. 6, the auxiliary electrode 3 may be on the insulating layer 4. In this case, after the auxiliary electrode 3 is formed, a conductive material is formed on the insulating layer 4 by a resistance heating vapor deposition method using a mask, a printing method, a coating method, a transfer method using a laser, or the like. 3.

  Hereinafter, the organic EL device according to the present invention will be described using specific examples.

<Example 1>
The organic EL element of Example 1 has the configuration shown in FIG. In the following description, the process of forming the lower electrode 2 will be described. However, since it is an active matrix display element, it is assumed that a thin film transistor is formed in each pixel on the substrate 1. In order to simplify the description, a monochrome element will be described.

  In Example 1, first, the lower electrode 2 and the auxiliary electrode 3 were patterned on the substrate 1.

  The lower electrode 2 was formed by sputtering a laminated film of Al having a thickness of 100 nm and ITO having a thickness of 50 nm. The auxiliary electrode 3 was formed by similarly sputtering Al having a thickness of 100 nm.

  The lower electrode 2 and the auxiliary electrode 3 were formed on the entire surface of the laminate on the substrate 1 and then formed into an organic EL element pattern corresponding to the pixel circuit by photolithography.

  Next, an insulating layer 4 was formed with polyimide so as to cover the lower electrode 2, and the insulating layer 4 was removed by photolithography to expose the lower electrode 2 to form a pixel region.

  Next, the organic compound layer 5 was formed on the lower electrode 2 by vapor deposition. In this example, as the organic compound layer 5, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer made of a known organic material were laminated using a resistance heating vapor deposition method.

  Next, as the first upper electrode 6, IZO with a film thickness of 40 nm was formed by sputtering. Here, in another vacuum chamber in the same apparatus, a semiconductor CW laser having a wavelength of 810 nm was irradiated onto the auxiliary electrode 3 from the surface of the substrate 1 to remove the organic compound layer 5 and the first upper electrode 6.

  Next, as the second upper electrode 7, an Mg—Ag alloy with a film thickness of 40 nm was formed by resistance heating vapor deposition.

Finally, an inorganic protective layer (not shown) made of silicon nitride was formed by plasma CVD using SiH ₄ gas, N ₂ gas, and H ₂ gas. The thickness of the inorganic protective layer was 1 μm, and was formed so as to cover the entire substrate surface on which the organic EL element was formed.

  In the organic EL element of Example 1 produced as described above, good light emission without light emission unevenness was obtained.

<Example 2>
The organic EL element of Example 2 has the configuration shown in FIG. In the following description, the process of forming the lower electrode 2 will be described. However, since it is an active matrix display element, it is assumed that a thin film transistor is formed in each pixel on the substrate 1. In order to simplify the description, a monochrome element will be described.

  In Example 2, similarly to Example 1, the lower electrode 2 was patterned on the substrate 1.

  The auxiliary electrode 3 was patterned in a stripe shape as shown in FIG. By doing so, scanning of the energy beam onto the auxiliary electrode 3 is simplified.

  Next, in the same manner as in Example 1, the insulating layer 4 was patterned.

  Next, the auxiliary electrode 3 was formed on the insulating layer 4 through a mask by resistance heating vapor deposition. As the auxiliary electrode 3, Al having a film thickness of 100 nm was used.

  Next, as in Example 1, the organic compound layer 5 was formed by a vapor deposition method. Here, in another vacuum chamber in the same apparatus, a semiconductor CW laser having a wavelength of 810 nm was irradiated onto the auxiliary electrode 3 from the surface of the substrate 1 to remove the organic compound layer 5.

  Next, as in Example 1, 40 nm thick IZO was deposited as the first upper electrode 6 by sputtering.

  Next, as the second upper electrode 7, an Mg—Ag alloy with a film thickness of 40 nm was formed by vapor deposition.

Finally, as in Example 1, an inorganic protective layer (not shown) made of silicon nitride was formed by plasma CVD using SiH ₄ gas, N ₂ gas, and H ₂ gas.

  In the organic EL element of Example 2 produced as described above, good light emission without light emission unevenness was obtained.

<Example 3>
The organic EL element of Example 3 has the configuration shown in FIG. In the following description, the process of forming the lower electrode 2 will be described. However, since it is an active matrix display element, it is assumed that a thin film transistor is formed in each pixel on the substrate 1. In order to simplify the description, a monochrome element will be described.

  In Example 3, similarly to Example 1, the lower electrode 2 was patterned on the substrate 1.

  Next, as shown in FIG. 3, the insulating layer 4 was patterned. By doing so, the insulating layer 4 can be shared between the pixels, and the photolithography process can be simplified.

  Next, the auxiliary electrode 3 was formed on the insulating layer 4 through a mask by resistance heating vapor deposition. As the auxiliary electrode 3, Al having a film thickness of 100 nm was used.

  Next, as in Example 1, the organic compound layer 5 was formed by a vapor deposition method. Here, in another vacuum chamber in the same apparatus, a semiconductor CW laser having a wavelength of 810 nm was irradiated onto the auxiliary electrode 3 from the surface of the substrate 1 to remove the organic compound layer 5.

  Next, as in Example 1, 40 nm thick IZO was deposited as the first upper electrode 6 by sputtering.

  Next, an Mg—Ag alloy having a film thickness of 40 nm was formed as the second upper electrode 7 by vapor deposition.

Finally, as in Example 1, an inorganic protective layer (not shown) made of silicon nitride was formed by plasma CVD using SiH ₄ gas, N ₂ gas, and H ₂ gas.

  In the organic EL element of Example 3 prepared as described above, good light emission without light emission unevenness was obtained.

<Example 4>
In Example 4, as in Example 1, the lower electrode 2, the auxiliary electrode 3, the insulating layer 4, the organic compound layer 5, and the first upper electrode 6 were formed on the substrate 1. And the organic compound layer 5 and the 1st upper electrode 6 on the auxiliary electrode 3 were removed, the 2nd upper electrode 7 and the inorganic protective layer (not shown) were formed, and the organic EL element was created. However, the film thickness of IZO as the first upper electrode 6 was 5 nm.

  In the organic EL device of Example 4 produced as described above, good light emission without light emission unevenness was obtained.

<Example 5>
In Example 5, similarly to Example 1, the lower electrode 2, the auxiliary electrode 3, the insulating layer 4, the organic compound layer 5, and the first upper electrode 6 were formed on the substrate 1. And the organic compound layer 5 and the 1st upper electrode 6 on the auxiliary electrode 3 were removed, the 2nd upper electrode 7 and the inorganic protective layer (not shown) were formed, and the organic EL element was created. However, the film thickness of IZO as the first upper electrode 6 was set to 200 nm.

  In the organic EL element of Example 5 prepared as described above, good light emission without light emission unevenness was obtained.

<Comparative Example 1>
FIG. 7 is a schematic cross-sectional view showing a method for manufacturing an organic EL element according to a comparative example. In the following description, the process of forming the lower electrode 2 will be described. However, since it is an active matrix display element, it is assumed that a thin film transistor is formed in each pixel on the substrate 1. In order to simplify the description, a monochrome element will be described.

  In Comparative Example 1, as in Example 1, the lower electrode 2, the auxiliary electrode 3, and the insulating layer 4 were patterned on the substrate 1.

  Next, as in Example 1, the organic compound layer 5 was formed by a vapor deposition method. Here, in another vacuum chamber in the same apparatus, a semiconductor CW laser having a wavelength of 810 nm was irradiated onto the auxiliary electrode 3 from the surface of the substrate 1 to remove the organic compound layer 5.

  Next, as in Example 1, as the first upper electrode 6, IZO having a thickness of 40 nm was formed by sputtering.

  Next, as the second upper electrode 7, an Mg—Ag alloy with a film thickness of 40 nm was formed by vapor deposition.

Finally, as in Example 1, an inorganic protective layer (not shown) made of silicon nitride was formed by plasma CVD using SiH ₄ gas, N ₂ gas, and H ₂ gas.

  In the organic EL element of Comparative Example 1 prepared as described above, light emission unevenness due to contamination was observed.

<Comparative example 2>
In Comparative Example 2, as in Example 1, first, the lower electrode 2, the auxiliary electrode 3, the insulating layer 4, the organic compound layer 5, and the first upper electrode 6 were formed on the substrate 1. Next, after removing the organic compound layer 5 and the first upper electrode 6 on the auxiliary electrode 3, an organic EL element was formed by forming a second upper electrode 7 and an inorganic protective layer (not shown). However, the film thickness of IZO as the first upper electrode 6 was 3 nm.

  In the organic EL element of Comparative Example 2 prepared as described above, light emission unevenness due to contamination was observed.

<Comparative Example 3>
In Comparative Example 3, as in Example 1, the lower electrode 2, the auxiliary electrode 3, the insulating layer 4, the organic compound layer 5, and the first upper electrode 6 were formed on the substrate 1. And the organic compound layer 5 and the 1st upper electrode 6 on the auxiliary electrode 3 were removed, the 2nd upper electrode 7 and the inorganic protective layer (not shown) were formed, and the organic EL element was created. However, the film thickness of IZO as the first upper electrode 6 was set to 250 nm.

  In the organic EL element of Comparative Example 3 prepared as described above, light emission unevenness due to contamination was observed. Further, the absorption of the first upper electrode 6 was large, and the luminance was lowered overall.

1 is a schematic cross-sectional view of an organic EL element according to an embodiment of the present invention. The typical sectional view showing the manufacturing method of the organic EL element concerning the embodiment of the present invention. 1 is a schematic plan view of an organic EL element according to an embodiment of the present invention. 1 is a schematic plan view of an organic EL element according to an embodiment of the present invention. 1 is a schematic plan view of an organic EL element according to an embodiment of the present invention. 1 is a schematic cross-sectional view of an organic EL element according to an embodiment of the present invention. Typical sectional drawing which shows the manufacturing method of the organic EL element which concerns on a comparative example.

Explanation of symbols

1 Substrate 2 Lower electrode 3 Auxiliary electrode 4 Insulating layer 5 Organic compound layer 6 First upper electrode 7 Second upper electrode 8 Energy beam

Claims (3)

A substrate, a plurality of pixels formed on the substrate, and an auxiliary electrode formed between the plurality of pixels;
Each pixel includes, in order from the substrate side, a lower electrode provided for each pixel, an organic compound layer including a light emitting layer, and an upper electrode provided in common across a plurality of pixels. In the method of manufacturing an organic light emitting device,
Forming the organic compound layer on the lower electrode and the auxiliary electrode;
Forming a first upper electrode in common across the plurality of pixels on the surface of the organic compound layer;
Partially removing the organic compound layer and the first upper electrode to expose the auxiliary electrode;
And a step of forming a second upper electrode in common across the plurality of pixels on the first upper electrode and the auxiliary electrode.   2. The method of manufacturing an organic light emitting device according to claim 1, wherein the step of exposing the auxiliary electrode is a step of partially applying an energy beam to the auxiliary electrode. A substrate, a plurality of pixels formed on the substrate, and an auxiliary electrode formed between the plurality of pixels,
Each pixel includes, in order from the substrate side, a lower electrode provided for each pixel, an organic compound layer including a light emitting layer, and an upper electrode provided in common across a plurality of pixels. In organic light emitting devices,
The upper electrode has a first upper electrode and a second upper electrode in this order on the organic compound layer,
The organic light emitting device according to claim 1, wherein the first upper electrode has a thickness of 5 nm to 200 nm.

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