JP2010017798A - Machining apparatus - Google Patents

Abstract

An atmosphere in which grinding is performed and an atmosphere in which polishing is performed can be exhausted without any trouble without using a plurality of exhaust devices.
An exhaust means 15 is coupled to a first coupling port 154a coupled to a first duct 152 communicating with a grinding region E1 and a second duct 153 coupled to a polishing region E2. A connecting duct 154 having a third coupling port 154c coupled to the first coupling port 154b and a third coupling port 154c coupled to the suction port 151 for suction. The first coupling port 154a and the second coupling port 154b are connected to the third coupling port 154c. In this way, spraying by grinding and polishing debris by polishing up to the position immediately before the suction port 151 are sucked by another duct consisting of the first and second ducts 152 and 153.
[Selection] Figure 3

Description

  The present invention relates to a processing apparatus that performs grinding and polishing on a wafer such as a semiconductor wafer.

  Semiconductor wafers are required to be further reduced in thickness with the recent reduction in size and thickness of various electronic devices. For this reason, when the thickness of the semiconductor wafer becomes as thin as 100 μm or less, for example, there is a problem of maintaining the strength after being formed into chips. Therefore, technology that removes mechanical damage due to grinding by polishing or etching the processed surface after grinding is used, and processing equipment that can perform both grinding and polishing It has been proposed (see, for example, Patent Document 1).

  Here, in the atmosphere in which grinding is performed, spray water is generated because the grinding water is used to cool the processing point and discharge the processing waste, and in the atmosphere in which polishing processing is performed, the polishing scrap of the polishing pad to be processed is removed. appear.

JP 2001-252853 A

  However, since these sprays and abrasive debris generated in the processing atmosphere become a dense and sticky object when they are united, this object sticks to the inner wall of the duct when exhausted through a common duct and the duct is clogged. It will occur. Therefore, it is necessary to perform exhaust using two exhaust devices for spraying and polishing scraps, and there are adverse effects such as a complicated structure, an increase in size, and an increase in cost.

  The present invention has been made in view of the above, and provides a processing apparatus capable of performing exhaust in an atmosphere in which grinding is performed without using a plurality of exhaust apparatuses and in an atmosphere in which polishing is performed without hindrance. For the purpose.

  In order to solve the above-described problems and achieve the object, a processing apparatus according to the present invention grinds a wafer while holding a wafer and a grinding liquid that is disposed facing the holding means and supplies a grinding liquid. A grinding means having a grinding wheel for polishing, and a polishing means having a polishing pad disposed opposite to the holding means for polishing the wafer in a dry manner, and grinding and polishing the wafer held by the holding means An exhaust means for exhausting a grinding region for grinding and a polishing region for polishing, and the exhaust means includes a suction port for generating a suction force, and a first portion provided in the grinding region. A first duct that communicates with one exhaust port, a second duct that communicates with a second exhaust port provided in the polishing region, a first coupling port coupled to the first duct, and the Coupled to the second duct A coupling duct having a second coupling port and a third coupling port coupled to the suction port, wherein the first coupling port and the second coupling port are the third coupling port. It is arrange | positioned in the vicinity of.

  The processing apparatus according to the present invention is characterized in that, in the above invention, the second coupling port and the third coupling port are arranged in a straight line.

  According to the processing apparatus of the present invention, the exhaust means is coupled to the first coupling port coupled to the first duct communicating with the grinding region side and the second duct coupled to the polishing region side. A coupling duct having a third coupling port coupled to the suction port for suction and the first coupling port and the second coupling port are disposed in the vicinity of the third coupling port. Therefore, spraying by grinding up to the position immediately before the suction port and polishing scraps by grinding are sucked by another duct, which is the first and second ducts, and it becomes difficult to stick to the inner wall of the duct instead of being integrated. There is an effect that the exhaust in the atmosphere in which the grinding process is performed and the atmosphere in which the polishing process is performed can be performed without any trouble without using a plurality of exhaust means.

  DESCRIPTION OF THE PREFERRED EMBODIMENTS A processing apparatus that is the best mode for carrying out the present invention will be described below with reference to the drawings. FIG. 1 is a perspective view illustrating a configuration example of a processing apparatus according to the present embodiment, FIG. 2 is a perspective view illustrating a configuration example of a processing apparatus with a processing region cover omitted, and FIG. It is a layout figure which shows the positional relationship etc. of each part.

  The processing apparatus 1 according to the present embodiment grinds the back surface of a disk-shaped wafer W such as a semiconductor wafer in order to reduce the thickness and flattens the ground surface of the ground wafer W with high accuracy. It is to be polished. The processing apparatus 1 according to the present embodiment includes, for example, a housing 2, a first grinding unit 3, a second grinding unit 4, a polishing unit 5, and four holding units installed on the turntable 6. 7a to 7d, cassettes 8 and 9, positioning means 10, carry-in means 11, carry-out means 12, cleaning means 13, carry-in / out means 14 and exhaust means 15 are mainly provided.

  The first grinding means 3 presses the wafer W held on the holding means 7b while rotating the grinding wheel 3c having the grinding wheel 3b mounted on the lower end of the spindle 3a, thereby rotating the wafer W. This is for rough grinding the back surface. In such rough grinding, grinding water is used to cool the machining point and discharge the machining waste. Similarly, the second grinding means 4 presses the back surface of the rough ground wafer W held by the holding means 7c while rotating a grinding wheel 4c having a grinding wheel 4b mounted on the lower end of the spindle 4a. Thus, the back surface of the wafer W is subjected to finish grinding. In such finish grinding, grinding water is used to cool the machining point and discharge the machining waste.

  Further, the polishing means 5 polishes the back surface of the wafer W by pressing the back surface of the finish-ground wafer W held by the holding means 7d while rotating the grinding pad 5b attached to the lower end of the spindle 5a. Is to do.

  The turntable 6 is a disk-shaped table provided on the upper surface of the housing 2, is provided so as to be rotatable in a horizontal plane, and is rotationally driven at an appropriate timing. On the turntable 6, for example, four holding means 7a to 7d are arranged at equal intervals with a phase angle of 90 degrees, for example. These holding means 7a to 7d have a chuck table structure having a vacuum chuck on the upper surface, and hold the wafer W placed thereon by vacuum suction. These holding means 7a to 7d are rotationally driven in a horizontal plane by a rotational drive mechanism at the time of grinding and polishing. Such holding means 7 a to 7 d are sequentially moved to the carry-in / carry-out position A, the rough grinding position B, the finish grinding position C, the polishing position D, and the carry-in / carry-out position A by the rotation of the turntable 6.

  The cassettes 8 and 9 are wafer containers having a plurality of slots. One cassette 8 accommodates the wafer W before grinding, and the other cassette 9 accommodates the wafer W after polishing. The positioning means 10 is a table on which the wafer W taken out from the cassette 8 is temporarily placed and its center is aligned.

  The carry-in means 11 is composed of a transport arm having a suction pad and rotationally driven in a horizontal plane, and sucks and holds the pre-grinding wafer W aligned by the positioning means 10 to the carry-in / out position A. It carries in on the holding means 7a located. The carry-out means 12 is composed of a transfer arm that has a suction pad and is driven to rotate in a horizontal plane, and holds and cleans the polished wafer W held on the holding means 7a located at the carry-in / out position A. It is carried out to the means 13.

  The carry-in / out means 14 is, for example, a robot pick provided with a U-shaped hand 14a. The U-shaped hand 14a sucks, holds, and transports the wafer W. Specifically, the carry-in / out means 14 carries out the wafer W before grinding from the cassette 8 to the alignment means 10 and carries the wafer W after polishing into the cassette 9 from the cleaning means 13. The cleaning means 13 cleans the wafer W after polishing, and removes contamination such as grinding scraps and polishing scraps adhering to the ground and polished processed surface.

  Further, the exhaust unit 15 is for exhausting to remove the spray generated in the grinding region E1 for grinding and the polishing debris of the polishing pad 5b generated in the polishing region E2 for polishing. Here, in the present embodiment, the area around the holding means 7b and 7c on the turntable 6 that grinds the wafer W by the first and second grinding means 3 and 4 is set as the grinding area E1, An area around the holding means 7d on the turntable 6 that polishes the wafer W by the polishing means 5 is set as a polishing area E2. Then, a processing region cover 16 that is formed in a substantially L shape in a plane covering the turntable 6 so as to form a grinding atmosphere and a polishing atmosphere that are as close as possible corresponding to the grinding region E1 and the polishing region E2. Is provided on the housing 2. The processing area cover 16 is formed with an opening that allows the first and second grinding means 3 and 4 and the polishing means 5 to advance and retreat in the vertical direction so as not to hinder the processing operation on the wafer W. Has been.

  The exhaust unit 15 includes a suction port 151, a first duct 152, a second duct 153, and a connecting duct 154. The suction port 151 is an opening formed in a part of a box-like suction part 155 connected to a negative pressure suction source (not shown) to generate a suction force. The first duct 152 is a duct disposed around the housing 2 so as to communicate with a first discharge port 156 provided so as to face the atmosphere of the grinding region E1. Here, the first discharge ports 156 are provided at two locations on the first grinding means 3 side and the second grinding means 4 side, and both communicate with the first duct 152. The second duct 153 is a duct disposed so as to communicate with the second discharge port 157 provided so as to face the atmosphere of the polishing region E2.

  The connection duct 154 includes a first coupling port 154 a coupled to the first duct 152, a second coupling port 154 b coupled to the second duct 153, and a third coupling coupled to the suction port 151. And a mouth 154c. Here, the connecting duct 154 is formed to be short so that the first coupling port 154a and the second coupling port 154b are arranged in the vicinity of the third coupling port 154c. At this time, in the connection duct 154, the first coupling port 154a and the third coupling port 154c are orthogonal to each other, but the second coupling port 154b and the third coupling port 154c are arranged in a straight line. It is formed so that. Furthermore, the suction port 151 (suction part 155) is disposed in the vicinity of the polishing region E2, and is set so that the length of the second duct 153 is as short as possible.

  In such a configuration, when the wafer W is ground by the first grinding means 3 or the second grinding means 4, grinding water is used to cool the processing point and discharge the work waste accompanying grinding. Liquid spray occurs in the grinding atmosphere corresponding to E1. Such spray is sucked into the suction portion 155 via the first duct 152 and the connecting duct 154 communicating with the first discharge port 156 in the grinding region E1 according to the suction force generated at the suction port 151 and exhausted. Is done.

  On the other hand, in parallel with such grinding of the wafer W, in the polishing region E2, the polishing process is performed on the ground wafer W held by the holding means 7d by the polishing means 5. During such a polishing process, polishing scraps of the polishing pad 5b are generated in the polishing atmosphere corresponding to the polishing region E2. Such polishing debris is sucked into the suction portion 155 via the second duct 153 and the connection duct 154 communicating with the second discharge port 157 in the polishing region E2 according to the suction force generated at the suction port 151. Exhausted.

  In this way, both the liquid spray generated during grinding and the polishing debris generated during polishing are both sucked into the suction portion 155 from the suction port 151. In the present embodiment, the connecting duct 154 is used. Is formed so that the first and second coupling ports 154a and 154b are arranged in the vicinity of the third coupling port 154c, so that liquid is sprayed and polished until just before the suction port 151. The debris is sucked in the separate first and second ducts 152 and 153, and finally merges in the connecting duct 154. Therefore, in these first and second ducts 152 and 153, the spray and the polishing dust are not integrated into a thick and sticky object, and sticking to the inner wall of the duct is less likely to occur. Therefore, the exhaust in the atmosphere for performing the grinding and the atmosphere for performing the polishing can be performed without any trouble by using only one exhaust unit 15 without using a plurality of exhaust units.

  In particular, in the present embodiment, since the second and third coupling ports 154b and 154c are arranged in a straight line in the connecting duct 154, the polishing scraps of the polishing pad 5b that tends to adhere to the inner wall of the duct are connected to the connecting duct. Even in 154, the air can be exhausted almost without touching the inner wall, the adhesion can be prevented, and the occurrence of duct clogging can be prevented.

  The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, although the connection duct 154 is formed in a substantially T shape in the present embodiment, as shown in FIG. 4, the third coupling port 154c is equal to the first and second coupling ports 154a and 154b. You may form in a substantially Y shape so that it may become the angle of. According to this, the flow of the spray to the suction port 151 and the flow of the polishing dust are substantially equal, and both are sucked and exhausted smoothly. In particular, if the diameter of the third coupling port 154c is larger than the diameter of the first and second coupling ports 154a and 154b, the first and third coupling ports 154a and 154c and the second and third Both of the coupling ports 154b and 154c can be brought close to a linear arrangement.

It is a perspective view which shows the structural example of the processing apparatus concerning embodiment of this invention. It is a perspective view which shows the structural example of the processing apparatus which abbreviate | omits a process area | region cover and shows. It is a layout figure which shows the positional relationship etc. of each part. It is a top view which shows a connection duct vicinity as a modification.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Processing apparatus 3,4 Grinding means 3b, 4b Grinding wheel 5 Polishing means 5b Polishing pad 7a-7d Holding means 15 Exhaust means 151 Suction port 152 1st duct 153 2nd duct 154 Connection duct 154a 1st coupling port 154b Second coupling port 154c Third coupling port 156 First discharge port 157 Second discharge port E1 Grinding region E2 Polishing region W Wafer

Claims (2)

A holding means for holding the wafer, a grinding means having a grinding wheel arranged to face the holding means and grinding the wafer while supplying a grinding liquid, and arranged to face the holding means and dry. A polishing device having a polishing pad for polishing a wafer, and processing and grinding the wafer held by the holding device,
An exhaust means for exhausting a grinding region for grinding and a polishing region for polishing;
The exhaust means includes
A suction port for generating a suction force;
A first duct that communicates with a first outlet provided in the grinding region;
A second duct communicating with the second outlet provided in the polishing region;
A connecting duct having a first coupling port coupled to the first duct, a second coupling port coupled to the second duct, and a third coupling port coupled to the suction port;
And the first coupling port and the second coupling port are arranged in the vicinity of the third coupling port.   The processing apparatus according to claim 1, wherein the second coupling port and the third coupling port are arranged in a straight line.

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