JP2010010601A - Semiconductor module, manufacturing method thereof, and portable device - Google Patents

Abstract

In a semiconductor module having a structure in which a protruding electrode provided in a wiring layer is connected to an element electrode provided in a semiconductor element, connection reliability between the protruding electrode and the element electrode is improved.
A semiconductor module includes a wiring layer provided integrally with a protruding electrode, a semiconductor element provided with an element electrode facing the protruding electrode, and an insulating resin layer. A conductive insulating resin layer 60. The protruding electrode 16 penetrates the insulating resin layer 12, and a tip portion thereof protrudes from the insulating resin layer 12. In the anisotropic insulating resin layer 60 between the protruding electrode 16 and the element electrode 52, a conductive path is formed between the protruding electrode 16 and the element electrode 52 because the conductive fillers are in contact with each other. On the other hand, in the anisotropic insulating resin layer 60 in a region other than between the protruding electrode 16 and the element electrode 52, the conductive filler is in an isolated state, so that insulation is maintained.
[Selection] Figure 1

Description

  The present invention relates to a semiconductor module on which a semiconductor element is mounted.

In recent years, with the miniaturization and high functionality of electronic devices, there has been a demand for further miniaturization of semiconductor elements used in electronic devices. With the miniaturization of semiconductor elements, it is essential to narrow the pitch between electrodes for mounting on a wiring board. As a surface mounting method of a semiconductor element, a flip chip mounting method is known in which solder balls are formed on electrodes of a semiconductor element and solder balls are soldered to electrode pads of a wiring board. In the flip chip mounting method, the size of the solder ball itself and the generation of bridges during soldering are limited, and there is a limit to narrowing the pitch of the electrodes. As a structure for overcoming such limitations, a protrusion structure formed by half-etching the base material is used as an electrode or via, and a semiconductor element is mounted on the base material via an insulating resin such as an epoxy resin, thereby forming the protrusion structure. There is known a structure in which electrodes of a semiconductor element are connected to each other (see Patent Document 1 and Patent Document 2).
JP 2004-193297 A Japanese Patent Laid-Open No. 10-209218

  Conventionally, in a semiconductor module having a structure in which a protruding electrode provided in a wiring layer is connected to an element electrode provided in a semiconductor element, when the height of the protruding electrode varies, a relatively low protrusion There existed a subject that the connection reliability of an electrode and the element electrode of a semiconductor element fell.

  Further, when the insulating resin enters between the protruding electrode and the semiconductor element, a connection failure may occur and reliability may be lowered.

  The present invention has been made in view of these problems, and an object of the present invention is to provide a protruding electrode and an element electrode in a semiconductor module having a structure in which a protruding electrode provided in a wiring layer is connected to an element electrode provided in a semiconductor element. The provision of technology capable of improving the connection reliability.

  One embodiment of the present invention is a semiconductor module. The semiconductor module includes a wiring layer provided with a protruding electrode, a semiconductor element provided with an element electrode facing the protruding electrode, an insulating resin layer provided between the wiring layer and the semiconductor element, a protruding electrode, A semiconductor module comprising: an anisotropic insulating resin layer that electrically connects the device electrodes.

  According to this aspect, the protruding electrode provided in the wiring layer and the element electrode provided in the semiconductor element are electrically connected via the anisotropic insulating resin layer. If the anisotropic insulating resin layer has a certain load or more, a conductive path is formed by pressurization. For this reason, by adjusting the pressure load when crimping the bump electrode, even if the height of the bump electrode varies, the bump electrode provided on the wiring layer and the semiconductor element are provided. Thus, the reliability of connection with the device electrode is improved, and as a result, the manufacturing yield of the semiconductor module can be improved.

  In the semiconductor module of the above aspect, the anisotropic insulating resin layer may cover the entire main surface of the semiconductor element provided with the element electrode. Further, the height of the protruding electrode may be higher than the thickness of the insulating resin layer. Further, the protruding electrode may be provided integrally with the wiring layer. Moreover, the wiring layer and the protruding electrode may be formed of rolled copper.

  Another embodiment of the present invention is a portable device. The portable device is characterized by mounting any one of the semiconductor modules described above.

  Another aspect of the present invention is a method for manufacturing a semiconductor module. The manufacturing method of the semiconductor module includes a step of selectively removing one main surface of a metal plate to form a protruding electrode, and an insulating resin layer thicker than the height of the protruding electrode is laminated on one main surface of the metal plate. An anisotropic insulating resin layer is sandwiched between the process, the step of thinning the insulating resin layer so that the tip of the protruding electrode is exposed from the insulating resin layer, and the semiconductor element on which the metal plate and the element electrode are formed In this state, the metal plate, the anisotropic insulating resin layer, and the semiconductor element are pressure-bonded, and a conductive path is formed in the anisotropic resin layer so that the protruding electrode and the element electrode are electrically connected, and the metal The method includes: a step of patterning a plate to form a wiring layer; and a step of patterning a protective layer on the wiring layer so that a predetermined region of the wiring layer is opened.

  According to the semiconductor module manufacturing method of this aspect, a semiconductor module in which the protruding electrodes provided in the wiring layer and the element electrodes provided in the semiconductor element are more reliably connected can be manufactured with high yield.

  In the semiconductor module manufacturing method of the above aspect, the semiconductor elements may be formed in a matrix on the semiconductor substrate, and may further include a step of separating the semiconductor elements after patterning the protective layer.

  ADVANTAGE OF THE INVENTION According to this invention, in the semiconductor module of the structure where the protruding electrode provided in the wiring layer was connected to the element electrode provided in the semiconductor element, the connection reliability of a protruding electrode and an element electrode can be improved.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

  FIG. 1 is a schematic cross-sectional view showing a configuration of a semiconductor module 10 according to the first embodiment. The semiconductor module 10 includes a wiring layer 14 provided integrally with the protruding electrodes 16, a semiconductor element 50 provided with an element electrode 52 facing the protruding electrodes 16, an insulating resin layer 12, and an anisotropic insulating resin layer. 60.

  The insulating resin layer 12 is made of an insulating resin, and is formed of a material that causes plastic flow when pressed, for example. An example of a material that causes plastic flow when pressed is an epoxy thermosetting resin. The epoxy thermosetting resin used for the insulating resin layer 12 may be any material having a viscosity of 1 kPa · s under conditions of a temperature of 160 ° C. and a pressure of 8 Mpa, for example. In addition, this epoxy thermosetting resin has a viscosity of about 1/8 when the resin is pressurized at 5 to 15 Mpa, for example, at a temperature of 160 ° C., compared to the case where no pressure is applied. . On the other hand, the B stage epoxy resin before thermosetting is not as viscous as when the resin is not pressurized under the condition of the glass transition temperature Tg or lower, and does not cause viscosity even when pressurized. The epoxy thermosetting resin is a dielectric having a dielectric constant of about 3-4.

  The insulating resin layer 12 may be formed of a thermosetting resin such as a melamine derivative such as BT resin, a liquid crystal polymer, an epoxy resin, a PPE resin, a polyimide resin, a fluororesin, a phenol resin, or a polyamide bismaleimide.

  The wiring layer 14 is provided on one main surface S1 of the insulating resin layer 12, and is formed of a conductive material, preferably a rolled metal, and further rolled copper. Or you may form with electrolytic copper. The wiring layer 14 has a protruding electrode 16 protruding from the insulating resin layer 12 side. In the present embodiment, the wiring layer 14 and the protruding electrode 16 are integrally formed. However, the present invention is not particularly limited to this. A protective layer 18 is provided on the main surface of the wiring layer 14 opposite to the insulating resin layer 12 to prevent the wiring layer 14 from being oxidized. Examples of the protective layer 18 include a solder resist layer. An opening 18a is formed in a predetermined region of the protective layer 18, and a part of the wiring layer 14 is exposed through the opening 18a. Solder balls 20 as external connection electrodes are formed in the openings 18a, and the solder balls 20 and the wiring layer 14 are electrically connected. A position where the solder ball 20 is formed, that is, a region where the opening 18a is formed is, for example, an end portion that is routed by rewiring.

  The overall shape of the protruding electrode 16 becomes smaller as it approaches the tip. In other words, the side surface of the protruding electrode 16 is tapered. The height of the protruding electrode 16 is higher than the thickness of the insulating resin layer 12. In other words, the protruding electrode 16 penetrates the insulating resin layer 12, and the tip portion protrudes from the insulating resin layer 12.

  The anisotropic insulating resin layer (ACF layer) 60 covers the entire main surface (entire electrode formation surface) of the semiconductor element 50 provided with the element electrodes 52.

  The anisotropic insulating resin layer 60 is made of a material in which a conductive filler is dispersed in an insulating resin such as a thermosetting epoxy resin. As the conductive filler, for example, particles plated with gold on resin particles, particles plated with gold on nickel particles, particles coated with an insulating resin on silver particles, and the like can be used.

  The thickness of the anisotropic insulating resin layer 60 is thinner in the region between the protruding electrode 16 and the element electrode 52 than in other regions. In the anisotropic insulating resin layer 60 between the protruding electrode 16 and the element electrode 52, a conductive path is formed between the protruding electrode 16 and the element electrode 52 because the conductive fillers are in contact with each other. On the other hand, in the anisotropic insulating resin layer 60 in a region other than between the protruding electrode 16 and the element electrode 52, the conductive filler is in an isolated state, so that insulation is maintained.

  The semiconductor element 50 includes a semiconductor substrate 51 and an element electrode 52 facing each of the protruding electrodes 16. On the main surface of the semiconductor element 50 on the side in contact with the insulating resin layer 12, a protective layer 54 provided with an opening so as to expose the element electrode 52 is laminated.

  Specific examples of the semiconductor element 50 include semiconductor chips such as an integrated circuit (IC) and a large scale integrated circuit (LSI). A specific example of the protective layer 54 is a polyimide layer. Further, for example, aluminum (Al) is used for the element electrode 52. An insulating layer such as an epoxy resin may be interposed between the protective layer 54 and the semiconductor substrate 51.

  According to the semiconductor module 10 having the configuration described above, the protruding electrode 16 provided on the wiring layer 14 and the element electrode 52 provided on the semiconductor element 50 are electrically connected via the anisotropic insulating resin layer 60. If the anisotropic insulating resin layer 60 has a certain load or more, a conductive path is formed by pressurization. For this reason, even if the height of the protruding electrode 16 varies by adjusting the pressure applied when the protruding electrode 16 is crimped, the protruding electrode 16 provided on the wiring layer 14 and the semiconductor The connection reliability with the element electrode 52 provided in the element 50 is improved, and as a result, the manufacturing yield of the semiconductor module 10 can be improved.

  In addition, since the anisotropic insulating resin layer 60 is filled in accordance with the shape of the protective layer 54 around the element electrode 52, the generation of voids in the side wall portion of the protective layer 54 is suppressed.

  In addition, conduction between the protruding electrode 16 and the element electrode 52 is realized via the anisotropic insulating resin layer 60, while the insulating resin layer not including the protective layer 18 and the conductive filler is provided between the adjacent wiring layers 14. Therefore, the dielectric strength between adjacent wiring layers 14 is improved. As a result, the pitch of the wiring layer 14 can be reduced, and as a result, the semiconductor module 10 can be easily reduced in size.

(Semiconductor module manufacturing method)
A method for manufacturing the semiconductor module according to the first embodiment will be described with reference to FIGS.

  First, as shown in FIG. 2A, a copper plate 13 is prepared as a metal plate having a thickness at least larger than the sum of the height of the protruding electrode 16 and the thickness of the wiring layer 14 as shown in FIG. The thickness of the copper plate 13 is, for example, 125 μm.

  Next, as shown in FIG. 2B, a resist 70 is selectively formed in accordance with the pattern of the protruding electrodes 16 by lithography. Specifically, a resist film having a predetermined film thickness is attached to the copper plate 13 using a laminator, exposed using a photomask having a pattern of the protruding electrodes 16, and then developed to form a resist on the copper plate 13. 70 is selectively formed. In order to improve the adhesion to the resist, it is desirable to perform pretreatment such as polishing and washing on the surface of the copper plate 13 as necessary before laminating the resist film.

  Next, as shown in FIG. 2C, a bump electrode 16 having a predetermined pattern is formed on the copper plate 13 using the resist 70 as a mask.

  Next, as shown in FIG. 2D, the resist 70 is stripped using a stripping agent. Through the steps described above, the bump electrode 16 is formed on the copper plate 13. The diameter of the base portion, the diameter of the top portion, and the height of the protruding electrode 16 of the present embodiment are, for example, 100 to 140 μmφ, 50 μmφ, and 20 to 25 μm, respectively.

  Next, as shown in FIG. 3A, the insulating resin layer 12 is laminated on the surface of the copper plate 13 on which the protruding electrodes 16 are formed. Here, the insulating resin layer 12 is thicker than the protruding electrode 16.

  Next, as shown in FIG. 3B, the insulating resin layer 12 is thinned so that the height of the protruding electrode 16 is higher than the thickness of the insulating resin layer 12 by using a dry etching method such as a plasma etching method. To do. Thereby, the tip portion of the protruding electrode 16 is exposed and protrudes from the insulating resin layer 12.

  Next, as shown in FIG. 3C, the copper plate 13 and the semiconductor element 50 are aligned so that the protruding electrode 16 and the element electrode 52 of the semiconductor element 50 correspond to each other, and the copper plate 13 and the semiconductor element 50 are aligned. The anisotropic insulating resin layer 60 is sandwiched between the two. For alignment of the copper plate 13, an alignment mark may be provided at a predetermined position of the semiconductor element 50. The thickness of the anisotropic insulating resin layer 60 may be, for example, the difference between the height of the protruding electrode 16 and the thickness of the insulating resin layer 12. The protective layer 54 is patterned in advance so that the element electrode 52 is exposed on the electrode formation surface of the semiconductor element 50. A large number of semiconductor elements 50 are formed in a matrix on the semiconductor substrate 51.

  Next, as shown in FIG. 4A, the copper plate 13 and the semiconductor element 50 are pressure-bonded with the anisotropic insulating resin layer 60 interposed therebetween. The load at the time of crimping may be within a range in which a conductive path is formed in the anisotropic insulating resin layer 60 in a region between the protruding electrode 16 and the element electrode 52. For example, the load and temperature during crimping can be 100 MPa and 180 ° C., respectively.

  Next, as shown in FIG. 4B, the copper plate 13 shown in FIG. 4A is etched down so that the thickness from the insulating resin layer 12 becomes, for example, 20 μm, and then the photoresist method and etching are performed. The copper plate 13 is selectively removed using a method to form a wiring layer 14 having a predetermined (re) wiring pattern.

Next, as shown in FIG. 4C, the protective layer 18 made of a photo solder resist layer or the like is patterned so that a predetermined region of the wiring layer 14 becomes the opening 18a, and then the opening is formed using a solder printing method. A solder ball 20 is formed on the portion 18a.

  Next, as shown in FIG. 4D, the semiconductor substrate 51 and the like are cut along a predetermined scribe line by dicing, and the semiconductor module 10 is separated into pieces. Through the above steps, the semiconductor module 10 according to the first embodiment can be manufactured. According to this manufacturing method, the semiconductor module 10 in which the protruding electrode 16 provided in the wiring layer 14 and the element electrode 52 provided in the semiconductor element 50 are more reliably connected can be manufactured with high yield.

  In addition, by manufacturing the semiconductor module 10 by dicing the semiconductor elements 50 formed in a matrix shape, the manufacturing method of the semiconductor module 10 is simplified, so that the manufacturing cost of the semiconductor module 10 is reduced. be able to.

(Embodiment 2)
FIG. 5 is a schematic cross-sectional view showing the configuration of the semiconductor module 10 according to the second embodiment. Since the basic configuration of the semiconductor module 10 of the present embodiment is the same as that of the first embodiment, the semiconductor module 10 according to the second embodiment will be described focusing on the configuration different from the first embodiment.

  In the semiconductor module 10 according to the second embodiment, the anisotropic insulating resin layer 60 is provided only on the top surface of the protruding electrode 16 and the periphery thereof, and the anisotropic insulating resin layer 60 is not a continuous film. This is different from the first embodiment.

  In the anisotropic insulating resin layer 60 in a region between the protruding electrode 16 and the element electrode 52, a conductive path is formed by pressurization. Also with this configuration, the same effect as in the first embodiment can be obtained. In the semiconductor module 10 according to the second embodiment, the region between the wiring layer 14 and the semiconductor element 50 is filled with the insulating resin layer 12 that does not include the conductive filler, so that it is adjacent to the first embodiment. Therefore, the withstand voltage between the wiring layers 14 can be further increased. Since the anisotropic insulating resin layer 60 around the top surface of the protruding electrode 16 is filled in the side wall portion of the protective layer 54, it contributes to the suppression of void generation.

(Production method)
A method for manufacturing a semiconductor module according to the second embodiment will be described with reference to FIG. The semiconductor module manufacturing method according to the second embodiment is common to the semiconductor module manufacturing method according to the first embodiment up to FIG.

  After the process described with reference to FIG. 3A, the insulating resin layer 12 is thinned so that the top surface of the protruding electrode 16 is exposed as shown in FIG. 6A. In the present embodiment, the height of the protruding electrode 16 and the thickness of the insulating resin layer 12 are equal.

  Next, as shown in FIG. 6B, an anisotropic insulating resin layer 60 is formed in a recess formed by the surface of the element electrode 52 and the side wall of the protective layer 54. The method for forming the anisotropic insulating resin layer 60 is not particularly limited. For example, after covering the entire device electrode 52 and the protective layer 54 with the anisotropic insulating resin layer, unnecessary portions may be removed using a squeegee. Good.

  The copper plate 13 and the semiconductor element 50 are aligned so that the element electrodes 52 of the semiconductor element 50 formed with the anisotropic insulating resin layer 60 interspersed with the protruding electrodes 16 correspond to each other.

 Next, as shown in FIG. 6C, the copper plate 13 and the semiconductor element 50 are pressure-bonded so that the protruding electrode 16 and the element electrode 52 are electrically connected. A conductive path is formed in the anisotropic insulating resin layer 60 in the region between the two.

  Hereinafter, similarly to FIGS. 4A to 4D of the manufacturing method of the semiconductor module of the first embodiment, the copper plate 13 and the semiconductor element 50 are pressure-bonded, the copper plate 13 is patterned, the protective layer 18 and the solder ball 20. The semiconductor module 10 shown in FIG. 5 can be obtained by sequentially forming the semiconductor module 10 and dividing the semiconductor module 10 into individual pieces.

(Embodiment 3)
Next, a portable device provided with the semiconductor module of the present invention will be described. In addition, although the example mounted in a mobile telephone is shown as a portable apparatus, electronic devices, such as a personal digital assistant (PDA), a digital video camera (DVC), and a digital still camera (DSC), may be sufficient, for example.

  FIG. 7 is a diagram showing a configuration of a mobile phone including the semiconductor module 10 according to the embodiment of the present invention. The mobile phone 111 has a structure in which a first housing 112 and a second housing 114 are connected by a movable portion 120. The first housing 112 and the second housing 114 can be rotated about the movable portion 120 as an axis. The first housing 112 is provided with a display unit 118 and a speaker unit 124 that display information such as characters and images. The second housing 114 is provided with an operation unit 122 such as operation buttons and a microphone unit 126. The semiconductor module 10 according to each embodiment of the present invention is mounted inside such a mobile phone 111.

  FIG. 8 is a partial cross-sectional view (cross-sectional view of the first casing 112) of the mobile phone shown in FIG. The semiconductor module 10 according to the embodiment of the present invention is mounted on a printed circuit board 128 via the solder balls 20 and is electrically connected to the display unit 118 and the like via the printed circuit board 128.

  According to the semiconductor module 10 according to the embodiment of the present invention, the mounting reliability of the semiconductor module 10 on the printed wiring board is improved. Therefore, the reliability of the portable device according to the present embodiment on which such a semiconductor module 10 is mounted is improved.

  The present invention is not limited to the above-described embodiments, and various modifications such as design changes can be added based on the knowledge of those skilled in the art. The form can also be included in the scope of the present invention.

  For example, in the method for manufacturing a semiconductor module according to the second embodiment, after the anisotropic insulating resin layer 60 is provided in advance on the semiconductor element 50 side, the copper plate 13 and the semiconductor element 50 are pressure-bonded. The copper plate 13 and the semiconductor element 50 may be pressure-bonded after the insulating resin layer 60 is formed on the top surface of each protruding electrode 16.

  The configuration of the present invention can be applied to a semiconductor package manufacturing process called a wafer level CSP (Chip Size Package) process. According to this, the semiconductor module can be reduced in thickness and size.

1 is a schematic cross-sectional view showing a configuration of a semiconductor module according to a first embodiment. FIG. 6 is a process cross-sectional view illustrating the method for manufacturing the semiconductor module according to the first embodiment. FIG. 6 is a process cross-sectional view illustrating the method for manufacturing the semiconductor module according to the first embodiment. FIG. 6 is a process cross-sectional view illustrating the method for manufacturing the semiconductor module according to the first embodiment. 4 is a schematic cross-sectional view showing a configuration of a semiconductor module according to a second embodiment. FIG. FIG. 10 is a process cross-sectional view illustrating the manufacturing method of the semiconductor module according to the second embodiment. 6 is a diagram showing a configuration of a mobile phone according to Embodiment 3. FIG. It is a fragmentary sectional view of a mobile phone.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 Semiconductor module, 12 Insulating resin layer, 14 Wiring layer, 16 Projection electrode, 20 Solder ball, 50 Semiconductor element, 52 Element electrode, 60 An anisotropic insulating resin layer.

Claims (8)

A wiring layer provided with protruding electrodes;
A semiconductor element provided with an element electrode facing the protruding electrode;
An insulating resin layer provided between the wiring layer and the semiconductor element;
An anisotropic insulating resin layer for electrically connecting the protruding electrode and the element electrode;
A semiconductor module comprising:   The semiconductor module according to claim 1, wherein the anisotropic insulating resin layer covers the entire main surface of the semiconductor element on which the element electrode is provided.   The semiconductor module according to claim 1, wherein a height of the protruding electrode is higher than a thickness of the insulating resin layer.   4. The semiconductor module according to claim 1, wherein the protruding electrode is provided integrally with the wiring layer.   The semiconductor module according to claim 4, wherein the wiring layer and the protruding electrode are formed of rolled copper.   A portable device comprising the semiconductor module according to any one of claims 1 to 5. Selectively removing one main surface of the metal plate to form a protruding electrode;
Laminating an insulating resin layer thicker than the height of the protruding electrode on one main surface of the metal plate;
Thinning the insulating resin layer so that the tip of the protruding electrode is exposed from the insulating resin layer;
The metal plate, the anisotropic insulating resin layer, and the semiconductor element are pressure-bonded with the anisotropic insulating resin layer sandwiched between the metal plate and the semiconductor element on which the element electrode is formed, and the protrusion Forming a conductive path in the anisotropic insulating resin layer so that an electrode and the element electrode are electrically connected;
Patterning the metal plate to form a wiring layer;
Patterning a protective layer on the wiring layer such that a predetermined region of the wiring layer is opened;
A method for manufacturing a semiconductor module, comprising:   The method of manufacturing a semiconductor module according to claim 7, further comprising a step of separating the semiconductor elements after the semiconductor elements are formed in a matrix on a semiconductor substrate and patterning the protective layer.

Images