JP2010004015A - Exposure method and unit, and device manufacturing method - Google Patents

Abstract

A pattern is efficiently exposed to a plurality of pattern transfer regions of various arrangements on a substrate to be exposed.
In an exposure apparatus that exposes a plate PT through patterns of masks MA and MB, a plurality of projection optical systems PLA that project images of the patterns of the masks MA and MB onto a plurality of pattern transfer regions on the plate PT, An optical system that controls the spacing of the projection optical systems PLA and PLB in the non-scanning direction in accordance with the arrangement of the PLB, the masks MA and MB, and the plate PT that move in synchronization with the scanning direction, and a plurality of pattern transfer regions. System stages 36A and 36B.
[Selection] Figure 3

Description

  The present invention relates to an exposure method and apparatus, and a device manufacturing method, and is suitable for use in, for example, a lithography process for manufacturing a liquid crystal display element or a semiconductor element.

  Conventionally, in a lithography process for manufacturing a display device such as a liquid crystal display element, various projection exposure apparatuses are used to transfer a pattern formed on a mask onto a substrate via a projection optical system. For example, a plate for manufacturing a liquid crystal display element is becoming larger and a glass plate exceeding 2 m square has been used in recent years. Therefore, in a liquid crystal exposure apparatus, a scanning exposure apparatus including a projection optical system having a plurality of lens modules is becoming mainstream in order to expand an area that can be exposed at one time (see, for example, Patent Document 1). By using this scanning type exposure apparatus, multi-cavity forming, for example, a pattern for a liquid crystal display element of 6 or 8 sides is generally performed on one plate.

In order to shorten the scanning distance of the mask stage, a scanning exposure apparatus has also been proposed in which two projection optical systems each having a plurality of lens modules are arranged apart in the scanning direction via a distance control mechanism (for example, , See Patent Document 2). In this exposure apparatus, one or two patterns formed on one mask are exposed to one or two pattern transfer regions on a plate by one scanning exposure through two projection optical systems.
JP 2006-195353 A JP 2003-31461 A

In a scanning exposure apparatus, it is required to efficiently expose a mask pattern in various arrangements on an increasingly larger plate.
In view of such circumstances, an object of the present invention is to provide an exposure method and apparatus capable of efficiently exposing a pattern to a plurality of pattern transfer regions of various arrangements on a substrate to be exposed, and a device manufacturing method. To do.

  An exposure apparatus according to the present invention projects an image of a mask pattern onto a plurality of exposure areas on the substrate in an exposure apparatus that exposes a substrate held on a substrate stage via a mask pattern held on the mask stage. A plurality of projection optical systems, a stage mechanism for moving the mask stage and the substrate stage in synchronization with the scanning direction, and the scanning direction of the plurality of projection optical systems corresponding to the arrangement of the plurality of exposure areas. And an interval control mechanism for controlling the interval in the non-scanning direction orthogonal to the.

  An exposure method according to the present invention is a method in which an image of a mask pattern is projected onto a plurality of exposure areas on the substrate via a plurality of projection optical systems in the exposure method of exposing the substrate via a mask pattern. And a non-scanning direction orthogonal to the scanning direction of the plurality of projection optical systems, corresponding to the arrangement of the plurality of exposure regions, corresponding to the synchronous movement step of moving the mask and the substrate in synchronization with the scanning direction. And an interval control step for controlling the interval.

  Further, the device manufacturing method according to the present invention includes a step of transferring an image of a pattern formed on the mask to the substrate using the exposure apparatus or exposure method of the invention, and the substrate on which the image of the pattern is transferred. Are developed, and a transfer pattern layer having a shape corresponding to the pattern image is formed on the substrate, and the substrate is processed through the transfer pattern layer.

  According to the present invention, by controlling the intervals in the non-scanning direction of the plurality of projection optical systems, for example, the projection areas of the plurality of projection optical systems are set on the plurality of exposure areas set in various arrangements on the substrate. The pattern can be scanned and exposed efficiently in parallel with a plurality of exposure areas on the substrate.

[First Embodiment]
Hereinafter, a first embodiment of the present invention will be described with reference to FIGS. FIG. 1 shows a schematic configuration of an exposure apparatus (liquid crystal exposure apparatus) 10 for manufacturing a scanning type liquid crystal display element of the present embodiment. In FIG. 1, an exposure apparatus 10 applies illumination light (exposure light) to first and second mask stages 12A and 12B that move while sucking and holding masks MA and MB, and pattern surfaces (lower surfaces) of the masks MA and MB, respectively. In order to form an image of a part of the patterns of the first and second illumination systems 18A and 18B and the masks MA and MB on the plate PT, a plurality of (here, five) projection optical modules are provided. From first and second projection optical systems PLA and PLB including 16A, 16B, 16C, 16D, and 16E, a plate stage 14 that holds and moves the plate PT, and a computer that comprehensively controls the operation of the entire apparatus. A main control device 50 (see FIG. 5) and a drive mechanism (not shown). Hereinafter, the X axis and the Y axis are taken so as to be orthogonal to each other in a plane (substantially a horizontal plane here) parallel to the plane on which the plate stage 14 is placed (the surface of the base member (not shown)). A description will be given by taking the Z-axis perpendicular to the plane (XY plane) including it. The surfaces on which the mask stages 12A and 12B are placed are also parallel to the XY plane, and the scanning directions of the mask stages 12A and 12B and the plate stage 14 during scanning exposure are parallel to the X axis (X direction). A rotation angle around an axis parallel to the Z axis is also called θz.

  Illumination light includes, for example, ultraviolet lines from an ultra-high pressure mercury lamp (eg, g-line, h-line, i-line, etc.), ArF excimer laser light with a wavelength of 193 nm, KrF excimer laser light with a wavelength of 248 nm, or YAG laser. A triple harmonic (wavelength 355 nm) or the like is used. As an example, the plate PT of this embodiment has a 1.9 × 2.2 m square, a 2.2 × 2.4 m square, and a 2.times.2.4 m square coated with a photoresist (photosensitive material) for manufacturing a liquid crystal display element (display device). It is a rectangular flat glass plate of about 4 × 2.8 m square or 2.8 × 3.2 m square. Further, the surface of the plate PT is partitioned into a plurality of pattern transfer regions (exposure regions or partition regions) to which the mask MA or MB pattern is transferred.

2 is a plan view showing drive mechanisms such as the mask stages 12A and 12B in FIG. 1, FIG. 3 is a partially cutaway view of the drive mechanism in FIG. 2 viewed from the −X direction, and FIG. It is the figure which looked at the drive mechanism of 2 from the -Y direction. FIG. 5 is a block diagram showing a control system of the exposure apparatus 10 of FIG.
3 and 4, the plate stage 14 is placed on the surface of the base member 6 so as to be movable in the X direction and the Y direction via an air bearing, and ends of the plate stage 14 in the −X direction and the −Y direction. The movable mirrors 30XM and 30YM are fixed to the laser beam, and a laser interferometer 30X that measures the position of the movable mirror 30XM in the X direction at two locations on the base member 6 and a laser interferometer 30Y that measures the position of the movable mirror 30YM in the Y direction are measured. Is installed. The base member 6 is placed on the floor surface via a plurality of vibration isolation tables 4. A plate interferometer system 30 for measuring the position in the X direction and the Y direction of the plate stage 14 (plate PT) with respect to the base member 6 and the rotation angle θz using the movable mirrors 30XM and 30YM and the laser interferometers 30X and 30Y (see FIG. 5). Based on the measurement value of the plate interferometer system 30 or the like, the main controller 50 determines the position and speed of the plate stage 14 in the X and Y directions and the rotation angle θz via the plate stage drive system 26 including a linear motor or the like. Control.

  In FIG. 2, the optical system frame 8 is fixed via four legs so as to cover the plate stage 14 at the center of the base member 6. A pair of Y-axis guides 34A and 34B are fixed to the upper surface of the optical system frame 8 in parallel with the Y-axis so as to sandwich the elongated opening 8a, and the first and second Y-axis guides 34A and 34B are movable in the Y-direction on the first and second Y-axis guides 34A and 34B. Second optical system stages 36A and 36B are placed. As shown in FIG. 4, for example, two convex portions 36Ba are formed on the bottom surface of the optical system stage 36B (same as 36A) so as to cover one Y-axis guide 34A, and the optical system stages 36A and 36B are Y It does not come off from the shaft guides 34A, 34B. Furthermore, an optical system stage drive system 25 (including a linear motor (or a feed screw type drive mechanism or the like) 25A, 25B for moving the optical system stages 36A, 36B in the Y direction independently of each other with respect to the optical system frame 8 ( FIG. 5) is provided.

  In FIG. 3, laser interferometers 27 </ b> A that independently measure the Y-direction positions of movable mirrors (not shown) on the side surfaces of the optical system stages 36 </ b> A and 36 </ b> B at both ends in the Y direction on the upper surface of the optical system frame 8. 27B is arranged. An optical system interferometer system 27 for measuring the positions of the optical system stages 36A and 36B in the Y direction with respect to the optical system frame 8 (and thus the base member 6) is configured including the laser interferometers 27A and 27B. The main controller 50 determines the positions of the optical system stages 36A and 36B in the Y direction with respect to the optical system frame 8 (base member 6) via the optical system stage drive system 25 based on the measurement values of the optical system interferometer system 27 and the like. To control.

  As shown in FIGS. 3 and 4, projection optical systems PLA and PLB are fixed to the optical system stages 36 </ b> A and 36 </ b> B, and the projection optical systems PLA and PLB are along the opening 8 a provided in the optical system frame 8 in the Y direction. Can be moved to. A pair of X-axis guides 38A and 38B are fixed on the optical system stages 36A and 36B in parallel to the X-axis, respectively, and are maskable on the X-axis guides 38A and 38B so as to be movable in the X direction via air bearings. Mask stages 12A and 12B for holding MA and MB are placed. Although the same pattern is formed as an example in the pattern areas 20A and 20B of the masks MA and MB, another pattern may be formed. The first and second illumination system frames 40A and 40B are fixed on the upper surfaces of the optical system stages 36A and 36B so as to cover the mask stages 12A and 12B, respectively. The first and second illumination system frames 40A and 40B are fixed to the first and second illumination system frames 40A and 40B. Illumination systems 18A and 18B are supported.

  In the present embodiment, the illumination systems 18A and 18B correspond to the five projection optical modules 16A to 16E constituting the projection optical systems PLA and PLB, respectively, and the first column of partial illumination systems 19A and 19A arranged in the Y direction. 19B, 19C, and partial illumination systems 19D, 19E in the second row. As an example, illumination light generated from a light source (not shown) arranged on the floor surface on which the base member 6 is installed is branched into 10 light beams, and the branched light beams respectively serve as light guides (not shown). To the partial illumination systems 19A to 19E of the illumination systems 18A and 18B.

  The partial illumination systems 19A to 19E in the first row and the second row of the illumination system 18A are respectively provided in the trapezoidal illumination areas 2MA, 2MB, 2MC in the first row and the second row of the pattern surface of the mask MA in FIG. And 2MD and 2ME are illuminated. The illumination areas 2MA to 2ME are arranged in a staggered pattern. That is, the illumination areas 2MD and 2ME in the second row are moved in the −X direction, and the edges in the −X direction of the five illumination areas 2MA to 2ME are aligned with a straight line parallel to the Y axis. 2MA to 2ME as a whole form one rectangular illumination area elongated in the Y direction. The outer edge portions of the illumination areas 2MA and 2MC at both ends in the Y direction are parallel to the X axis. The partial illumination systems 19A to 19E include variable field stops that define the shapes of the illumination areas 2MA to 2ME, respectively.

  Similarly, the two rows of partial illumination systems 19A to 19E of the illumination system 18B illuminate the two rows of trapezoidal illumination areas 3MA to 3ME on the pattern surface of the mask MB, respectively. The shape and arrangement of the illumination areas 3MA to 3ME are the same as the illumination areas 2MA to 2ME. Hereinafter, the illumination areas 2MA to 2ME and 3MA to 3ME are also referred to as illumination areas IA and IB as a whole. As an example, by using the field stop of the illumination system 18A, the width of the outer illumination areas 2MA and 2MC in the Y direction is narrowed (the outer edge portion is moved inward), thereby the width of the illumination area IA in the Y direction. Can be adjusted. The same applies to the illumination area IB.

  In the present embodiment, the optical system stages 36A and 36B are moved in the Y direction with respect to the optical system frame 8, so that the projection optical systems PLA and PLB, the illumination systems 18A and 18B, and the mask stages 12A and 12B are integrated therewith. Moves in the Y direction. Further, for example, by changing the amount of movement of the optical system stages 36A, 36B in the Y direction or moving the second optical system stage 36B in the Y direction while the first optical system stage 36A is stationary, The distance in the Y direction (non-scanning direction) between the projection optical systems PLA and PLB can be controlled.

  In FIG. 2, an X-axis moving mirror 28XM and a Y-axis moving mirror 28YM are fixed to the −X direction end and the + Y direction end of the mask stage 12A, respectively, and the −X direction end of the mask stage 12B. The X-axis moving mirror 29XM and the Y-axis moving mirror 29YM are fixed to the Y-axis and the Y-direction end, respectively, and the positions of the moving mirrors 28XM and 29XM in the X direction are separated from each other on the optical system frame 8 in the Y direction. Laser interferometers 28X and 29X that measure in two places, and laser interferometers 28Y and 29Y that measure the positions of the movable mirrors 28YM and 29YM in the Y direction are installed. Masks that include laser interferometers 28X, 28Y, 29X, and 29Y and that independently measure the X- and Y-direction positions and the rotation angle θz of the mask stages 12A and 12B with respect to the optical system frame 8 (and thus the base member 6), respectively. Interferometer systems 28 and 29 (see FIG. 5) are configured.

  In this case, since the plate interferometer system 30 measures the relative position and relative rotation angle of the plate stage 14 with respect to the base member 6, the main controller 50 uses the mask interferometer systems 28 and 29 and the plate interferometer system 30. From the measured values, the relative position in the X and Y directions and the relative rotation angle θz between the plate stage 14 (plate PT) and the mask stages 12A and 12B (masks MA and MB) can be obtained.

  Further, mask stage drive systems 24A and 24B including two-axis linear motors for driving the mask stages 12A and 12B in the X direction with respect to the two X-axis guides 38A and 38B of the optical system stages 36A and 36B (see FIG. 5). ) Is provided. It is also possible to control the rotation angle θz of the mask stages 12A and 12B within a predetermined range by controlling the difference between the movement amounts of the two-axis linear motors. Furthermore, by driving the linear motors 25A and 25B that drive the optical system stages 36A and 36B in the Y direction by a minute amount, the position of the mask stages 12A and 12B (and the projection optical systems PLA and PLB) in the Y direction can also be controlled. is there. During the scanning exposure, the main controller 50 determines a predetermined relative position and rotation between the plate PT and the masks MA and MB based on the measurement values of the mask interferometer systems 28 and 29 and the plate interferometer system 30. The position of the mask stages 12A and 12B in the X direction and the rotation angle θz are individually controlled with respect to the optical system stages 36A and 36B via the mask stage drive systems 24A and 24B so that the angular relationship is maintained. Accordingly, the positions of the optical system stages 36A and 36B (mask stages 12A and 12B) in the Y direction are controlled via the optical system stage drive system 25.

  The five projection optical modules 16A to 16E constituting the projection optical systems PLA and PLB in FIG. 1 form an erect image with an equal magnification system in which both optical axes are parallel to the Z axis and both are telecentric. Accordingly, a pattern having the same size and the same direction as the mask MA or MB pattern is formed in each pattern transfer region of the plate PT. In scanning exposure, when the masks MA and MB are scanned in the + X direction indicated by arrows A1 and A2 with respect to the illumination area, for example, the plate PT is scanned in the same direction as indicated by the arrow A3 with respect to the projection area. Is done. Furthermore, each of the projection optical modules 16A to 16E includes an image shift unit that shifts the position of the projected image in a predetermined range in the X direction and the Y direction. The projection optical modules 16A to 16E are arranged in the first row of projection optical modules 16A, 16B, and 16C arranged along the Y axis, and the first optical modules 16A to 16E are arranged along the Y axis apart from the + X direction. The projection optical modules 16D and 16E are divided into two rows.

  FIG. 6A is a plan view showing a projection area on the plate PT by the two projection optical systems PLA and PLB of FIG. 6A, five projection areas (image fields) 2PA, 2PB, 2PC, 2PD, and 2PE by the projection optical system PLA have the same size as the five illumination areas 2MA to 2ME on the mask MA in FIG. And the same houndstooth arrangement. That is, the projection optical modules 16A to 16E of the projection optical system PLA form the pattern images in the illumination areas 2MA to 2ME on the mask MA in FIG. 2 in the projection areas 2PA to 2PE on the plate PT with the same arrangement. Accordingly, by moving the projection areas 2PD and 2PE in the -X direction and aligning the edges in the -X direction of the projection areas 2PA to 2PE with a straight line parallel to the Y axis, the projection areas 2PA to 2PE as a whole are in the Y direction. An elongated rectangular projection area is formed.

  Similarly, the five projection optical modules 16A to 16E of the projection optical system PLB convert images of the patterns in the illumination areas 3MA to 3ME on the mask MB in FIG. 2 into the illumination areas 3MA to 3MA on the plate PT in FIG. Projection areas (image fields) 3PA to 2PE having the same size and size as 3ME are formed. Hereinafter, the projection areas 2PA to 2PE and 3PA to 3PE are also referred to as projection areas EA and EB as a whole.

The projection optical system having the same configuration as the projection optical systems PLA and PLB of this embodiment is described in detail in, for example, Japanese Patent Application Laid-Open No. 2001-215718 (corresponding US Pat. No. 6,552,775). It is disclosed.
In FIG. 6A, the patterns of the masks MA and MB of FIG. 2 are exposed through the projection optical systems PLA and PLB to the two pattern transfer regions SAi and SAj that are arranged apart from each other in the Y direction on the plate PT. In this case, the masks MA and MB are scanned in the X direction with respect to the illumination areas IA and IB via the mask stages 12A and 12B, and the arrow in FIG. As shown, the pattern transfer areas SAi and SAj on the plate PT are scanned in the X direction with respect to the projection areas EA and EB. At this time, the pattern transfer areas SAi and SAj are exposed by overlapping the end portions in the Y direction by the projection areas 2PA to 2PE and 3PA to 3PE, so that the pattern of the masks MA and MB is formed by one scanning exposure. The image is exposed on the entire surface of the pattern transfer areas SAi and SAj.

  Further, the exposure apparatus 10 of FIG. 1 detects eight alignment systems AL1, AL2, AL3, AL4, AL5, AL6, AL7, AL8 of the image processing system in order to detect the alignment mark on the plate PT. It has. The alignment systems AL1 to AL8 are held above the plate stage 14 by a plate-like holding member 32 extending in the Y direction supported by the base member 6 of FIG. Further, a mark plate MP having a longitudinal direction in the Y direction is disposed in the vicinity of the end portion in the −X direction on the upper surface of the plate stage 14. On the surface of the mark plate MP, as an example, eight reference mark areas FM are formed corresponding to each of the alignment systems AL1 to AL8 described above. In the reference mark region FM, reference marks for the alignment systems AL1 to AL8 and reference marks for alignment of the masks MA and MB are formed.

  Also, alignment marks MAA and MAB are formed at a plurality of locations on the masks MA and MB, respectively. Correspondingly, a relay lens system and an image sensor (CCD etc.) are provided below the six reference mark areas FM of the eight reference mark areas FM on the mark plate MP inside the plate stage 14. 6 mark image detection systems MD1 to MD6 (see FIG. 5) are arranged. Mark image detection systems MD1 to MD6 superimpose images of alignment marks MAA and MAB on projection masks PLA and PLB on masks MA and MB illuminated with illumination light and images of corresponding reference marks, and perform reference. Position information of the alignment marks MAA and MAB with reference to the mark is supplied to the main controller 50.

  Hereinafter, an example of the exposure operation of the exposure apparatus 10 of the present embodiment will be described. 6A, the common width (exposure width) in the Y direction (non-scanning direction) of the projection areas EA and EB by the projection optical systems PLA and PLB is W3, and the interval in the Y direction of the projection areas EA and EB is W1. Assuming that the entire width in the Y direction of the projection areas EA and EB (interval between edge portions in the Y direction) is W2, the following relationship is established. These interval W1, width W2, and width W3 are also called optical system parameters (W1, W2, W3).

W2 = W1 + 2 × W3 (1)
In this case, the width W3 in the Y direction of the projection areas EA and EB is the same as the width in the Y direction (illumination width) of the illumination areas IA and IB, and hence the width in the Y direction (mask width) of the pattern areas of the masks MA and MB. It is. Further, since the widths of the illumination areas IA and IB in FIG. 2 in the Y direction can be adjusted, the widths W3 of the projection areas EA and EB in the Y direction can be adjusted so as to decrease with respect to a predetermined maximum value accordingly. It is. Further, by driving the optical system stages 36A and 36B in FIG. 2 in the Y direction, the interval W1 in the Y direction between the projection areas EA and EB can be adjusted.

  In this embodiment, as shown in FIGS. 6B and 6C, the image of the device pattern is exposed to each of the six pattern transfer regions SA1 to SA6 on one plate PT “6”. The exposure can be performed by any method of “chamfering” and “8 chamfering” in which the image of the device pattern is exposed to each of the eight pattern transfer regions SA1 to SA8 on one plate PT. The pattern transfer areas SA1 to SA6 (or SA1 to SA8) are rectangular, and the long side direction (longitudinal direction) is the X direction (scanning direction). The length of the effective region of the plate PT in the long side direction is L1, and the length in the short side direction (short direction) is L2. 6B, the long side direction of the plate PT is the X direction, the pattern transfer regions SA1 to SA6 are 3 rows in the Y direction, and 2 columns (SA1, SA3, SA5 and SA2, in the X direction). SA4, SA6) are arranged in 3 rows × 2 columns. 6C, the long side direction of the plate PT is the Y direction (non-scanning direction), and the pattern transfer regions SA1 to SA8 have four rows in the Y direction and two columns in the X direction (SA1). , SA3, SA5, SA7 and SA2, SA4, SA6, SA8). Further, when the second layer and subsequent layers of the plate PT are exposed, alignment marks AM are attached to the pattern transfer regions SA1 to SA6 (or SA1 to SA8), respectively.

As an example, the length L1 in the long side direction of the plate PT is 2800 mm, and the length L2 in the short side direction is 2400 mm. In this case, the width L2 / 3 in the Y direction of the six-chamfered pattern transfer areas SA1 to SA6 is 800 mm, and the width L1 / 4 in the Y direction of the eight-chamfered pattern transfer areas SA1 to SA8 is 700 mm. L1 / 4 is narrower than the width L2 / 3.
L1 / 4 <L2 / 3 (2)
When performing exposure with six chamfers in the present embodiment, the parameters W1, W2, and M3 of the optical system in FIG. 6A and the length MXL in the X direction of the pattern areas of the masks MA and MB are set as follows. .

W2 = L2 (3A)
W1 = L2 / 3 (3B)
W3 = L2 / 3 (3C)
MXL = L1 / 2 (3D)
On the other hand, when exposure is performed with eight chamfers in this embodiment, the parameters W1, W2, M3 and length MXL of the optical system are set as follows.

W2 = 3 · L1 / 4 (4A)
W1 = L1 / 4 <L2 / 3 (4B)
W3 = L1 / 4 <L2 / 3 (4C)
MXL = L2 / 2 <L1 / 2 (4D)
The interval W1 in the Y direction of the projection areas EA and EB and the width W3 in the Y direction of the projection areas EA and EB are equal to the width in the Y direction of the pattern transfer areas SA1 to SA6 (or SA1 to SA8) on the plate PT, respectively. Is set. In this embodiment, the interval W1 in the Y direction between the projection areas EA and EB is also the interval in the Y direction between the two pattern transfer areas being exposed in parallel on the plate PT.

  In the present embodiment, the maximum value of the interval W1 may be L2 / 3 from the equations (3B) and (4B). Since the interval W1 is variable, the maximum value of the width W3 (that is, the illumination width and the mask width) in the Y direction of the projection areas EA and EB is calculated from the expressions (3C) and (4C). The maximum width of SA6 (SA1 to SA8) may be used. Furthermore, the maximum value of the length in the X direction of the pattern areas of the masks MA and MB may be L1 / 2.

  Next, an example of the operation when the exposure apparatus 10 performs exposure with six chamfers on the plate PT will be described with reference to the flowchart of FIG. This operation is controlled by the main controller 50. First, the main controller 50 determines the shape (length L1, L2) of the plate to be exposed, the shape of the pattern transfer area (length in the long side, width in the short side, and pattern transfer from the internal storage device. The exposure data such as the region spacing information and the array (shot array) and the shape of the pattern region of the mask to be used are read (step 101 in FIG. 9). Next, main controller 50 determines Y of illumination areas IA and IB via variable field stops in illumination systems 18A and 18B in accordance with information on the shape of the pattern area of the mask and the shape of each pattern transfer area on the plate. The width in the direction, and thus the width W3 in the Y direction of the projection areas EA and EB, is set to the value of equation (3C).

  Further, the main control device 50 displays the image via the optical system stage drive system 25 in accordance with the shape of each pattern transfer region on the plate and the shot arrangement (here, the pattern transfer regions SA1 to SA6 in FIG. 6B). The second optical system stage 36A, 36B is moved in the Y direction, and the interval W1 in the Y direction of the projection areas EA, EB of the projection optical systems PLA, PLB is set to the value of the expression (3B) (step 102). Specifically, one optical system stage 36A may be fixed and the position of only the other optical system stage 36B in the Y direction may be controlled.

  Next, after the masks MA and MB are loaded on the mask stages 12A and 12B, mask alignment is performed (step 103). That is, images of the alignment marks MAA and MAB of the masks MA and MB by the projection optical systems PLA and PLB are projected onto the plate stage 14, the plate stage 14 is driven, and the reference mark area FM of the mark plate MP is displayed as the image. The position of the alignment marks MAA and MAB is detected by the mark image detection systems MD1 to MD6.

  Next, the unexposed plate PT of FIG. 6B on which the photoresist is applied is loaded on the plate stage 14 (step 104). Here, assuming that the second and subsequent layers of the plate PT are exposed, the position of the predetermined alignment mark AM on the plate PT (pattern transfer) is moved by the alignment systems AL1 to AL8 while moving the plate stage 14 in the X and Y directions. The alignment coordinates of the areas SA1 to SA6) are detected, and the plate PT is aligned (step 105). At this time, it is assumed that the relationship (baseline) between the detection positions of the alignment systems AL1 to AL8 and the positions of the pattern images of the masks MA and MB is measured in advance. Therefore, the main controller 50 can recognize the positional relationship between the pattern images of the masks MA and MB and the pattern transfer regions SA1 to SA6 on the plate PT based on the results of the mask alignment and the plate alignment. At this time, the interval W1 in the Y direction of the projection areas EA and EB, which is the interval between the pattern images of the masks MA and MB, is equal to the interval in the Y direction of the pattern transfer areas SA1 to SA6 on the plate PT. If the difference is greater, for example, the position of the optical system stage 36B (mask MB) in the Y direction may be adjusted via the optical system stage drive system 25.

  Next, in order to expose the pattern images of the masks MA and MB to the two pattern transfer regions SA2 and SA6 at both ends in the Y direction on the + X direction side of the plate PT in FIG. The masks MA and MB are moved to the −X direction side of the illumination areas IA and IB, and the pattern transfer areas SA2 and SA6 on the plate PT are moved to the −X direction side of the projection areas EA and EB. Thereafter, the mask stage drive systems 24A and 24B and the plate stage drive system 26 are driven so that the pattern images of the masks MA and MB and the pattern transfer areas SA2 and SA6 are accurately overlapped. Then, irradiation of the illumination light to the illumination areas IA and IB is started, and the masks MA and MB are moved in the + X direction with respect to the illumination areas IA and IB as shown by an arrow A4 in FIG. In synchronization, the pattern transfer areas SA2 and SA6 of the plate PT are moved in the + X direction with respect to the projection areas EA and EB of the projection optical systems PLA and PLB, and the pattern transfer areas SA2 and SA6 are scanned and exposed in parallel. Stop irradiation with illumination light. Thereafter, the illumination light is irradiated during a period in which the pattern transfer area to be exposed passes through the projection areas EA and EB. In FIG. 7B and the like, the exposed pattern transfer region on the plate PT is hatched.

  Thereafter, in step 107, as indicated by an arrow A5 in FIG. 7B, the plate PT is moved in the + Y direction (step movement) via the plate stage 14 to the + X direction side of the illumination area IA in FIG. The mask MA is moved, and the pattern transfer area SA4 on the plate PT is moved to the + X direction side of the projection area EA. Thereafter, in step 108, as indicated by an arrow A6 in FIG. 7C, the pattern of the plate PT with respect to the projection area EA is synchronized with the movement of the mask MA in the −X direction with respect to the illumination area IA. The transfer area SA4 is moved in the -X direction, and only the pattern transfer area SA4 is scanned and exposed.

  Next, it is determined whether or not the exposure of all the pattern transfer areas on the plate PT has been completed (step 109). If the exposure has not been completed, the process returns to step 107 to return to the next pattern transfer area of the plate PT. In order to perform exposure on (here, the pattern transfer areas SA1, SA5), the plate PT is moved in the + X direction and the −Y direction as indicated by an arrow A7 in FIG. In subsequent step 108, as indicated by an arrow A8 in FIG. 7E, the projection areas EA and EB are synchronized with the movement of the masks MA and MB in the + X direction with respect to the illumination areas IA and IB. The pattern transfer areas SA1 and SA5 of the plate PT are moved in the + X direction, and the pattern transfer areas SA1 and SA5 are scanned and exposed. Thereafter, the operation returns from step 109 to step 107, and after moving the plate PT in the + Y direction, in step 108, as shown by an arrow A9 in FIG. In synchronization with the movement in the direction, the pattern transfer area SA3 of the plate PT is moved in the −X direction with respect to the projection area EA, and only the pattern transfer area SA3 is scanned and exposed.

  Thereafter, in step 109, since the exposure of all the pattern transfer regions of the plate PT has been completed, the operation shifts to step 110, and the plate PT is unloaded. Thereafter, if there is an unexposed plate in step 111, the operation returns to step 104, and the pattern of the masks MA and MB is exposed with six chamfers on the next plate. In step 111, the exposure ends when there are no unexposed plates. As described above, in the case of six-chamfering, the pattern images of the masks MA and MB can be exposed to the pattern transfer regions SA1 to SA6 of the plate PT by four scanning exposures.

Next, when the exposure apparatus 10 performs exposure on the plate PT with eight chamfers as shown in FIG. 6C, the variable field stop in the illumination systems 18A and 18B corresponding to step 102 in FIG. , The width in the Y direction of the illumination areas IA and IB, and thus the width W3 in the Y direction of the projection areas EA and EB are set to the values of the equation (4C). Further, for example, the optical system stage 36B of FIG. 2 is moved in the Y direction via the optical system stage drive system 25, and the Y direction interval W1 of the projection areas EA and EB of the projection optical systems PLA and PLB is expressed by the equation (4B). Set to the value of. Further, if necessary, mask replacement and alignment are performed in accordance with step 103. Here, the description will be made assuming that the mask for eight-sided chamfering is also masks MA and MB.
The exposure operation corresponding to steps 106 to 109 in FIG. 9 is as follows. That is, as indicated by an arrow A10 in FIG. 8A, in synchronization with the movement of the masks MA, MB in the + X direction with respect to the illumination areas IA, IB, the plate PT of the projection areas EA, EB is synchronized. The pattern transfer areas SA2 and SA6 are moved in the + X direction, and the pattern transfer areas SA2 and SA6 are scanned and exposed in parallel. Subsequently, after the plate PT is moved in the + Y direction, as indicated by an arrow A11 in FIG. 8B, the masks MA and MB are moved in synchronization with the illumination areas IA and IB in the −X direction. Then, the pattern transfer areas SA4 and SA8 of the plate PT are moved in the −X direction with respect to the projection areas EA and EB, and the pattern transfer areas SA4 and SA8 are scanned and exposed.

  Thereafter, after the plate PT is moved in the + X direction and the −Y direction, as shown by an arrow A12 in FIG. 8C, the masks MA and MB are synchronized with the movement of the masks MA and MB in the + X direction with respect to the illumination areas IA and IB. Then, the pattern transfer areas SA1 and SA5 of the plate PT are moved in the + X direction with respect to the projection areas EA and EB, and the pattern transfer areas SA1 and SA5 are scanned and exposed. Subsequently, after moving the plate PT in the + Y direction, as indicated by an arrow A13 in FIG. 8D, in synchronization with the movement of the masks MA and MB in the −X direction with respect to the illumination areas IA and IB, The pattern transfer areas SA3 and SA7 of the plate PT are moved in the −X direction with respect to the projection areas EA and EB, and the pattern transfer areas SA3 and SA7 are scanned and exposed. Thus, even in the case of eight chamfering, the pattern images of the masks MA and MB can be exposed to the pattern transfer regions SA1 to SA8 of the plate PT by four scanning exposures.

Effects and the like of this embodiment are as follows.
(1) The exposure apparatus 10 of the present embodiment projects the pattern images of the masks MA and MB held on the mask stages 12A and 12B onto a plurality of pattern transfer regions on the plate PT held on the plate stage 2 2 Two projection optical systems PLA and PLB, mask stage drive systems 24A and 24B and a plate stage drive system 26 for moving the mask stages 12A and 12B and the plate stage 14 in synchronization with the X direction (scanning direction), and a plurality of pattern transfers Corresponding to the arrangement of the regions, a control mechanism including optical system stages 36A and 36B and an optical system stage drive system 25 for controlling the spacing in the Y direction (non-scanning direction) of the projection optical systems PLA and PLB is provided.

  The exposure method by the exposure apparatus 10 is such that the masks MA, MB and the plate PT are projected in a state where the pattern images of the masks MA, MB are projected onto a plurality of pattern transfer regions on the plate PT via the projection optical systems PLA, PLB. , And step 102 for controlling the spacing in the Y direction of the projection optical systems PLA and PLB in correspondence with the arrangement of the plurality of pattern transfer regions.

  According to the present embodiment, the Y direction of the projection optical systems PLA and PLB is set such that the projection areas EA and EB of the projection optical systems PLA and PLB are set on, for example, two pattern transfer areas SA2 and SA6 on the plate PT. By controlling the interval, the pattern images of the masks MA and MB can be efficiently scanned and exposed in parallel to the two pattern transfer areas SA2 and SA6 (with high throughput). Further, since the interval in the Y direction of the projection optical systems PLA and PLB, and hence the interval W1 in the Y direction of the projection areas EA and EB, is variable, the width W3 in the Y direction of the projection areas EA and EB of the projection optical system is What is necessary is just to set according to the maximum width of the pattern transfer area | region on PT, and the enlargement of projection optical system PLA and PLB can be suppressed.

  On the other hand, when the interval W1 between the projection areas EA and EB is fixed, it is necessary to set the interval W1 to the interval L1 / 4 in the case of eight chamfering in FIG. Therefore, in order to perform the six-chamfer exposure shown in FIG. 6B, it is necessary to make the width W3 of the projection areas EA and EB in the Y direction larger than L2 / 3 in advance to provide a margin. The optical systems PLA and PLB increase in size.

In this embodiment, the projection optical systems PLA and PLB can be independently moved in the Y direction in order to control the spacing in the Y direction of the projection optical systems PLA and PLB. The position may be fixed and only the projection optical system PLB may be moved in the Y direction by the optical system stage 36B.
(2) In the present embodiment, mask stages 12A and 12B that hold the masks MA and MB and move in the Y direction are provided corresponding to the projection optical systems PLA and PLB, respectively. The optical stages 36A and 36B move in the Y direction integrally with the projection optical systems PLA and PLB, respectively. Therefore, since the width in the Y direction of the pattern areas of the masks MA and MB may be the same as the width W3 of the projection areas EA and EB in the Y direction, the increase in size of the mask stages 12A and 12B (masks MA and MB) can be suppressed. .

For example, when the position of the projection optical system PLA is fixed and only the projection optical system PLB can be moved in the Y direction, only the mask stage 12B may be moved in the Y direction by the optical system stage 36B.
(3) In this embodiment, since the illumination systems 18A and 18B are also moved in the Y direction by the optical system stages 36A and 36B, the width in the Y direction of the illumination areas IA and IB of the illumination systems 18A and 18B is also projected. It may be the same as the width W3 of the areas EA and EB, and the illumination systems 18A and 18B can be downsized.

  (4) The exposure apparatus 10 also has an optical system frame 8 that supports a control mechanism including optical system stages 36A and 36B with respect to the base member 6 of the plate stage 14, and a mask stage 12A supported by the optical system frame 8. , 12B in the X direction and Y direction, and laser interferometers 28X, 28Y, 29X, and 29Y that measure the rotation angle θz. Therefore, the relative positions and relative rotation angles between the mask stages 12A and 12B and the plate stage 14 on the base member 6 can be measured by the mask interferometer systems 28 and 29 and the plate interferometer system 30.

  (5) In addition, the projection optical systems PLA and PLB are arranged in the Y direction, respectively, and a plurality of (in the embodiment, five) projection optical modules 16A to 16 that project a partial image of the corresponding pattern onto the plate PT. 16E. Therefore, by combining the small and light projection optical modules 16A to 16E, the width of the projection areas EA and EB in the Y direction can be widened, and a wide area on the plate PT can be exposed by one scanning exposure.

(6) Since the projection optical modules 16A to 16E have the same magnification, and the mask stages 12A and 12B and the plate stage 14 can have the same scanning speed, it is easy to control the stage system.
Furthermore, the projection optical modules 16A to 16E are divided into a first row of projection optical modules 16A, 16B, and 16C and a second row of projection optical modules 16D and 16E that are arranged along the Y axis. . Accordingly, the pattern images of the masks MA and MB can be exposed to each pattern transfer region (SA1 or the like) of the plate PT by scanning exposure without any gap.

Further, the long side direction of the effective area of the plate PT is the X direction (scanning direction), the length of the effective area in the short side direction (here, the non-scanning direction (Y direction)) is L2, and the projection areas EA, EB When the interval W1 and the width W3 in the Y direction are set to L2 / 3 in the equations (3B) and (3C), six-chamfer exposure can be performed on the plate PT by four scanning exposures.
Further, the short side direction of the effective area of the plate PT is set to the X direction, the length of the effective area in the long side direction (Y direction in this case) is set to L1, and the interval W1 and the width W3 of the projection areas EA and EB in the Y direction are set. Is set to L1 / 4 of the equations (4B) and (4C), the eight exposures can be performed on the plate PT by four scanning exposures.

(7) Further, the exposure apparatus 10 moves the plate PT in the Y direction by the plate stage 14 during the exposure operation (step 107, FIG. 7B, etc.). As a result, even if there is an interval in the Y direction between the projection optical systems PLA and PLB (projection areas EA and EB), the entire pattern transfer area of the plate PT can be exposed.
[Second Embodiment]
A second embodiment of the present invention will be described with reference to FIGS. In the present embodiment, the exposure apparatus 10 of the first embodiment (FIGS. 1 to 5) is used, but the short side direction of the length L2 of the plate PT is set in the scanning direction (6 or 8 chamfers). The point of setting in the (X direction) is different.

FIG. 10A is a diagram showing the positional relationship in the Y direction of the masks MA and MB, the projection areas EA and EB of the projection optical systems PLA and PLB, and the plate PT when performing exposure with eight chamfers in the present embodiment. FIG. 10B is a diagram showing an example of the relative movement direction of the projection areas EA and EB on the plate PT.
In FIG. 10A, as in FIG. 6C, the long side direction of the length L1 of the plate PT is the Y direction (non-scanning direction), and the pattern transfer regions SA1 to SA8 are four lines in the Y direction. , Arranged in 4 rows × 2 columns of 2 columns in the X direction.

In this case, the Y-direction interval W1 of the projection areas EA, EB, the Y-direction width W3 of the projection areas EA, EB, the entire Y-direction width W2 of the projection areas EA, EB (optical parameters W1, W2, M3), The maximum value of the length MXL in the X direction of the pattern areas of the masks MA and MB is set as follows.
W2 = 3 · L1 / 4 (5A)
W1 = W3 = L1 / 4 (5B)
Maximum value of MXL = 2 · L2 / 3 (5C)
Further, the width in the Y direction (mask width) of the pattern areas of the masks MA and MB and the width in the Y direction (illumination width) of the illumination areas IA and IB by the illumination systems 18A and 18B in FIG. 1 are also Y of the projection areas EA and EB. It is set to the same value as the direction width W3. However, in the eight chamfering, the length MXL may actually be ½ of the length L2 in the short side direction as follows.

MXL = L2 / 2 <2 · L2 / 3 (5D)
It is assumed that the same pattern (indicated by symbol A) is formed in the pattern areas 20A and 20B of the masks MA and MB. In the present embodiment, in the case of performing exposure with eight chamfers, as in the case of FIG. 6C, as an example, as indicated by an arrow S1 in FIG. SA2 and SA6 are relatively scanned in the −X direction in the projection areas EA and EB, and the pattern images of the masks MA and MB are exposed in the pattern transfer areas SA2 and SA6. Actually, the plate PT is scanned in the + X direction with respect to the projection areas EA and EB, and the masks MA and MB are scanned in the same direction with respect to the illumination areas IA and IB in FIG. The same applies below).

  10B, the movement of the plate PT in the + Y direction, the scanning exposure of the pattern transfer areas SA4 and SA8 by the projection areas EA and EB indicated by the arrow S2, the movement of the plate PT in the + X direction and the −Y direction. Movement, scanning exposure of pattern transfer areas SA1, SA5 by projection areas EA, EB indicated by arrow S3, movement of plate PT in the + Y direction, and scanning of pattern transfer areas SA3, SA7 by projection areas EA, EB indicated by arrow S4 Exposure is performed. In this way, the pattern images AP of the masks MA and MB are exposed to the eight pattern transfer areas SA1 to SA8 on the plate PT by the scanning exposure four times in total.

FIG. 11 is a diagram showing the positional relationship between the masks MA and MB, the projection areas EA and EB of the projection optical systems PLA and PLB, and the plate PT in the Y direction when performing exposure with six chamfers in the present embodiment. FIGS. 12A to 12D are diagrams illustrating an example of relative movement directions of the projection areas EA and EB on the plate PT.
In FIG. 11, the long side direction of the length PT of the plate PT is the Y direction (non-scanning direction), and the longitudinal directions of the six pattern transfer regions SA1 to SA6 are also set to the Y direction. The pattern transfer areas SA1 to SA6 are arranged in 3 columns in the X direction and 2 rows × 3 columns in 2 rows (SA1 to SA3 and SA4 to SA6) in the Y direction.

  The pattern areas of the masks MA and MB are each divided into two partial pattern areas 20A1, 20A2, and 20B1, 20B2 in the X direction, and the patterns (reference numerals A1 and B1) formed in the partial pattern areas 20A1, 20A2 of the mask MA. The image (denoted by reference symbols A1P and B1P) is exposed to two regions obtained by dividing the pattern transfer regions SA1 to SA3 arranged in the X direction of the plate PT into two in the longitudinal direction (Y direction). Furthermore, a plurality of alignment marks MAA and MAC are attached to the partial pattern areas 20A1 and 20A2. The alignment mark MAC at the boundary between the partial pattern areas 20A1 and 20A2 may be used for alignment of both the patterns in the partial pattern areas 20A1 and 20A2, for example.

  Similarly, pattern transfer regions in which images (indicated by symbols A2P and B2P) of patterns (indicated by symbols A2 and B2) formed in the partial pattern regions 20B1 and 20B2 of the mask MB are arranged in the X direction of the plate PT, respectively. The exposure is performed on two areas obtained by dividing SA4 to SA6 into two in the longitudinal direction. Further, alignment marks MAB and MAD are also attached to the partial pattern areas 20B1 and 20B2, respectively. Note that the pattern of the mask MA and the pattern of the mask MB may be the same or different.

  In FIG. 11, the Y-direction interval W1 of the projection areas EA, EB, the Y-direction width W3 of the projection areas EA, EB, and the entire Y-direction width W2 of the projection areas EA, EB (optical parameters W1, W2, M3). , And the length MXL in the X direction of the entire pattern region of the masks MA and MB are set as in the formulas (5A) to (5C), as in the case of 8-chamfering. Furthermore, the mask width and the illumination width are also set to the same value as the width W3 in the Y direction of the projection areas EA and EB. The lengths in the X direction of the partial pattern areas 20A1, 20A2, 20B1, and 20B2 of the masks MA and MB are L2 / 3 (= MXL / 2).

  In the present embodiment, when exposure is performed with six chamfers, as shown by an arrow S21 in FIG. 12A as an example, first, the + Y-direction half faces of the two pattern transfer areas SA1 and SA4 on the plate PT are projected areas. By performing relative scanning in the + X direction using EA and EB, pattern images A1P and A2P of the partial pattern areas 20A1 and 20B1 of the masks MA and MB are exposed on the half surfaces of the pattern transfer areas SA1 and SA4. Actually, the plate PT is scanned in the −X direction with respect to the projection areas EA and EB, and in synchronization therewith, the partial pattern areas of the masks MA and MB of FIG. 11 with respect to the illumination areas IA and IB of FIG. 20A1 and 20B1 are scanned in the same direction. In FIG. 12B and the like, the exposed pattern transfer region is hatched.

  Subsequently, in FIG. 12B, after the projection areas EA and EB are relatively moved in the −Y direction with respect to the plate PT as indicated by an arrow S22, the projection areas EA and EB are indicated as indicated by an arrow S23. The half surface in the −Y direction of the two pattern transfer areas SA1 and SA4 is relatively scanned in the −X direction. In synchronization with this, partial pattern areas 20A2 and 20B2 of masks MA and MB in FIG. 11 are scanned in the + X direction with respect to illumination areas IA and IB (the same applies hereinafter). Thereby, the pattern images B1P and B2P of the partial pattern areas 20A2 and 20B2 of the masks MA and MB are exposed on the half surface of the pattern transfer areas SA1 and SA4.

  Further, in FIG. 12C, the projection areas EA and EB are moved with respect to the plate PT as indicated by an arrow S24, and two pattern transfer areas SA2 and 2 are indicated in the projection areas EA and EB as indicated by an arrow S25. The half surface of SA5 in the + Y direction is relatively scanned in the + X direction. Thereafter, in FIG. 12D, the projection areas EA and EB are moved with respect to the plate PT as indicated by the arrow S26, and the two pattern transfer areas SA2 and 2 are projected in the projection areas EA and EB as indicated by the arrow S27. By relatively scanning the half surface of SA5 in the -Y direction in the -X direction, the pattern images of the partial pattern regions 20A1, 20A2, 20B1, and 20B2 of the masks MA and MB are exposed on the entire surface of the pattern transfer regions SA2 and SA5. . Similarly, as shown by dotted arrows S28 and S29, the pattern transfer region SA3 is sequentially scanned in the + Y direction and -Y direction half surfaces of the pattern transfer regions SA3 and SA6 of the plate PT in the projection regions EA and EB. , SA6, the mask MA and MB pattern images are exposed.

  In this manner, the pattern images of the masks MA and MB can be exposed to the six pattern transfer areas SA1 to SA6 of the plate PT by six scanning exposures. Further, the scanning distance in the X direction of the plate PT and the masks MA and MB at each scanning exposure is ½ (L2 / 3) of the total length of the masks MA and MB, and the time for each scanning exposure is short, which is high. Throughput is obtained.

  According to this embodiment, the width W3 in the Y direction of the projection areas EA and EB (and the width of the pattern areas of the masks MA and MB and the width of the illumination areas IA and IB) is common to both the eight chamfers and the six chamfers. What is necessary is just to set to L1 / 4 of Formula (5B). Accordingly, since the width W3 in the Y direction of the projection areas EA and EB can be made narrower than in the first embodiment (formula (3C)), the projection optical systems PLA and PLB, the widths of the mask stages 12A and 12B, and the illumination system 18A and 18B can be further downsized.

  In the present embodiment, when the length L1 in the long side direction of the plate PT to be exposed changes, the optical system stages 36A and 36B are moved in the Y direction accordingly, and the projection areas EA and EB are moved. The interval W1 in the Y direction may be adjusted. Further, the maximum value of the width W3 in the Y direction of the projection areas EA and EB may be set to ¼ of the maximum length in the long side direction of the plate to be exposed.

[Third Embodiment]
A third embodiment of the present invention will be described with reference to FIGS. In the present embodiment, the present invention is applied to an exposure apparatus that uses a projection optical system with an enlargement magnification. In FIG. 13, parts corresponding to those in FIGS. Description is omitted.
FIG. 13 mainly shows the configuration of the optical system of the exposure apparatus 10A of the present embodiment. In FIG. 13, an exposure apparatus 10A includes first and second mask stages (not shown) that hold the masks MC and MD to be exposed and move in the X and Y directions, and trapezoidal shapes on the masks MC and MD. Illumination systems 18A and 18B for illuminating the illumination areas 2MA to 2MC and 3MA to 3MC, and enlarged images of patterns in the illumination areas 2MA to 2MC and 3MA to 3MC are projected areas 2PA to 2PC and 3PA to 3PC on the plate PT, respectively. Are provided with projection optical systems PLC and PLD, and a plate stage 14 that holds the plate PT and moves in the X and Y directions. In the present embodiment, the first mask base (not shown) on which the first mask stage is placed, the illumination system 18A, and the projection optical system PLC are relative to the base member on which the plate stage 14 is placed. It is supported by a fixed frame mechanism. On the other hand, the second mask base (not shown) on which the second mask stage is placed, the illumination system 18B, and the projection optical system PLD are movable in the Y direction, for example, similar to the optical system stage 36B of FIG. Supported by an optical stage (not shown). With this mechanism, it is possible to integrally control the spacing in the Y direction (non-scanning direction) of the projection optical systems PLC and PLD, the spacing in the Y direction of the masks MC and MD, and the spacing in the Y direction of the illumination systems 18A and 18B. it can.

  In FIG. 13, in the pattern areas of the masks MC and MD, there are six partial pattern areas 44A, 45A, 44B, 45B, 44C, 45C and 44D, 45D that are elongated in the X direction where the transfer pattern is formed. , 44E, 45E, 44F, 45F are arranged at equal intervals in the Y direction. The projection optical systems PLC and PLD are enlarged projection optical modules PL1, PL2, and PL3 that form enlarged images of patterns in the illumination areas 2MA to 2MC and 3MA to 3MC in the projection areas 2PA to 2PC and 3PA to 3PC on the plate PT, respectively. Are arranged at predetermined intervals in the Y direction. The magnified projection optical modules PL1 to PL3 form magnified images that are upright in the X direction and inverted in the Y direction, respectively. The enlargement magnification β is preferably 2 times or more, and is set to 2.5 times as an example in the present embodiment.

  In the present embodiment, the installation direction of the plate PT and the arrangement of the plurality of pattern transfer regions on the plate PT are arbitrary. As an example, the long side direction of the plate PT is the Y direction, and the Y direction is on the plate PT. It is assumed that the pattern transfer regions SA1 to SA8 are formed in four rows and two columns in the X direction (SA1, SA3, SA5, SA7 and SA2, SA4, SA6, SA8). In this case, an image obtained by enlarging the pattern of the odd-numbered partial pattern areas 44A to 44C to which the diagonal lines of the mask MC are applied is transferred to the partial transfer areas 46A to 46C of the hatched pattern transfer areas SA1 and SA2 on the plate PT. It is exposed while splicing in the direction. The enlarged images of the even-numbered partial pattern areas 45A to 45C of the mask MC are exposed while splicing in the Y direction to the partial transfer areas 47A to 47C of the pattern transfer areas SA3 and SA4. Similarly, images obtained by enlarging the patterns of the odd-numbered partial pattern areas 44D to 44F with diagonal lines of the mask MD are exposed to the pattern transfer areas SA5 and SA6 with diagonal lines, and the even-numbered partial pattern areas of the mask MD. An image obtained by enlarging the patterns 45D to 45F is exposed to the pattern transfer areas SA7 and SA8.

As described above, in the present embodiment, since the projection optical systems PLC and PLD have the magnification, the patterns in the small masks MC and MD and the pattern transfer regions SA1 to SA8 on the plate PT correspond to 1: 1. Yes. Therefore, an arbitrary pattern can be exposed on the entire surface of the plate PT only by using two small masks MC and MD.
Further, the arrangement period in the Y direction of the illumination areas 2MA to 2MC and the projection areas 2PA to 2PC is the same as the period of the partial pattern areas 44A to 44C (or 45A to 45C), and the individual Y of the illumination areas 2MA to 2MC The width in the direction is approximately ½ of the individual width of the partial pattern regions 44A to 44C (or 45A to 45C). The same applies to the illumination areas 3MA to 3MC and the projection areas 3PA to 3PC.

  Here, rectangular areas surrounding the outer shapes of the projection areas 2PA to 2PC and 3PA to 3PC by the projection optical systems PLC and PLD are defined as projection areas EA and EB, respectively. In FIG. 13, the length in the long side direction (Y direction) of the plate PT is L1, the length in the short side direction is L2, and 1 / of the width in the Y direction of one partial transfer region (for example, 46A) of the plate PT. Let 2 be ΔY. At this time, the width W3 in the Y direction of the projection areas EA and EB (substantially equal to the width of the illumination areas 2MA to 2MC and 3MA to 3MC) and the interval W1 in the Y direction of the projection areas EA and EB are set as follows. Is done.

W3 = L1 / 4−ΔY (6A)
W1 = L1 / 4 + ΔY (6B)
The width in the Y direction of the pattern areas of the masks MC and MD is a value obtained by adding the width in the Y direction of one partial pattern area (for example, 44A) to approximately L1 / 4. The length in the X direction is L2 / 2.5 (L2 / β). In this case, since the values of L1 and L2 are different depending on the plates, the interval W1 is different when exposing differently shaped plates. Further, the maximum value of the width W3 of the projection areas EA and EB may be set to approximately 1/4 of the maximum length L1 of the plate to be exposed.

  Next, in the present embodiment, an example of an operation when an enlarged image of the pattern of the masks MC and MD is exposed on the plate PT will be described with reference to FIG. FIGS. 14A and 14B are plan views showing relative positions in the Y direction during scanning exposure of the plate PT and the masks MC and MD of FIG. First, as indicated by an arrow S31 in FIG. 14A, from the first regions 44A1, 44D1, etc. on the −Y direction side of the alternate partial pattern regions 44A to 44C, 44D to 44F of the masks MC and MD in the + Y direction. In synchronization with the relative scanning of the illumination areas 2MA to 2MC and 3MA to 3MC sequentially with respect to the second areas 44A2, 44D2, etc. on the side, the pattern transfer areas SA1, SA2 of the plate PT and The projection areas EA and EB are sequentially scanned sequentially from the first area 46A1 and the like on the + Y direction side of the partial transfer areas 46A to 46C and 46D to 46F of SA5 and SA6 to the second area 46A2 and the like on the −Y direction side. In this case, the masks MC and MD are scanned in the + X direction, moved in the −Y direction, and scanned in the −X direction by first and second mask stages (not shown), respectively, and the plate PT is a plate stage. 14, scanning in the + X direction, movement in the + Y direction, and scanning in the −X direction are performed. By this reciprocating scanning, the pattern transfer regions SA1, SA2 and SA5, SA6 on the plate PT are exposed to the enlarged images of the patterns of the partial pattern regions 44A to 44C and 44D to 44F of the masks MC and MD in the Y direction. .

  Thereafter, the plate PT is moved in the + Y direction by a quarter of the width L1 in the long side direction. Then, as indicated by an arrow S33 in FIG. 14B, from the first regions 45A1, 45D1, etc. on the −Y direction side of the alternate partial pattern regions 45A to 45C and 45D to 45F of the masks MC and MD in the + Y direction. As shown by an arrow S34, the pattern transfer regions SA3 and SA4 of the plate PT and the second region 45A2, 45D2 and the like on the side are sequentially synchronized with the illumination regions 2MA to 2MC and 3MA to 3MC. The projection areas EA and EB are sequentially scanned sequentially from the first area 47A1 on the + Y direction side of the partial transfer areas 47A to 47C and 47D to 47F of SA7 and SA8 to the second area 47A2 and the like on the −Y direction side. By this reciprocating scanning, the pattern transfer regions SA3, SA4 and SA7, SA8 on the plate PT are exposed while the enlarged images of the pattern patterns 45A to 45C and 45D to 45F of the masks MC and MD are spliced in the Y direction. . In this way, enlarged images of the patterns of the masks MC and MD are exposed to the pattern transfer regions SA1 to SA8 on the entire surface of the plate PT by two reciprocating scanning exposures (four scanning exposures).

  In the case of performing exposure with six chamfers on the plate PT in FIG. 13, patterns for six chamfers are formed in the partial pattern regions 44A to 44F and 45A to 45F of the masks MC and MD, and FIG. The exposure operation described with reference to (B) may be executed. As described above, according to the present embodiment, since the projection optical systems PLC and PLD have the enlargement magnification, the patterns corresponding to all the pattern transfer regions (SA1 to SA6 or SA8) on the plate PT are set to the masks MC and The pattern to be transferred can be arbitrarily formed on the masks MC and MD regardless of the number of chamfers on the plate PT (6 chamfers or 8 chamfers). Further, since the width in the Y direction of the projection areas EA and EB may be approximately L1 / 4, an arbitrary pattern is exposed on the entire surface of the plate PT using the small masks MC and MD and the small projection optical systems PLC and PLD. it can.

Next, a manufacturing method of a liquid crystal display element as a device manufactured using the exposure apparatus 10 or 10A of the above embodiment in a lithography process will be described with reference to a flowchart of FIG.
In the pattern forming process in step 202 in FIG. 15, a so-called photolithography process (using a lithography apparatus (such as a glass substrate coated with a resist)) that transfers the pattern image formed on the mask to the photosensitive substrate using the exposure apparatus described above. Exposure step) is executed. Further, development is performed on the photosensitive substrate to which the pattern has been transferred (development of the photoresist layer on the glass substrate), and a photoresist layer (transfer pattern layer) having a shape corresponding to the pattern is generated. Then, a processing process for etching the surface of the substrate through the photoresist layer and a resist stripping process for removing the photoresist layer on the substrate are performed. By this pattern formation process, a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate.

Next, in the color filter forming process of step 204, a large number of sets of three dots corresponding to R (red), G (green), and B (blue) are arranged in a matrix or R, G, and B A set of three stripe filters forms a color filter arranged in a plurality of horizontal scanning line directions. Thereafter, in the cell assembly process of Step 206, for example, liquid crystal is injected between the substrate having a predetermined pattern obtained in the pattern formation process and the color filter obtained in the color filter formation process, and a liquid crystal panel (liquid crystal Cell). Thereafter, in the module assembly process of step 208, components such as an electric circuit and a backlight for performing display operation of the assembled liquid crystal panel (liquid crystal cell) are attached to complete the liquid crystal display element.
In this case, in the pattern forming step, the plate is exposed with high throughput using the above-described exposure apparatus, so that the productivity of the liquid crystal display element can be improved.

  In the configuration of FIG. 2 of the above embodiment, the optical system stages 36A and 36B (the mask stages 12A and 12B and the projection optical systems PLA and PLB, respectively) are supported in parallel in the Y direction on the common Y-axis guides 34A and 34B. Is placed). However, for example, the first set and the second set of Y-axis guides may be installed in the X direction, and the optical system stages 36A and 36B may be individually placed on these two sets of Y-axis guides. In this case, since it is possible to perform an operation of exchanging the positions of the optical system stages 36A and 36B in the Y direction, it is possible to efficiently expose plates having various shot arrangements.

  In the above embodiment, two projection optical systems PLA and PLB (or PLC and PLD) are used, but three or more projection optical systems may be arranged. In this case, the first projection optical system may be fixed, and the positions of the second and subsequent projection optical systems in the Y direction may be controlled. In this configuration, since three or more pattern transfer regions on the plate can be scanned and exposed in parallel, the throughput can be further improved.

  In the above embodiment, the case where the projection optical systems PLA and PLB (or PLC and PLD) are multi-lens projection optical systems including five (or three) projection optical modules has been described. The number of projection optical modules is not limited to this, and may be two or more. For example, the projection optical systems PLA and PLB are not limited to the multi-lens projection optical system, and a single projection optical module may be used.

The projection optical system or the projection optical module may be any of a refractive system, a reflective system, and a catadioptric system, and the projected image may be an inverted image.
In the above embodiment, the case where the projection optical systems PLA, PLB (or PLC, PLD) having the same projection magnification (or enlargement) is described. However, the present invention is not limited to this, and the projection optical system is a reduction system. But it ’s okay.

  In the above embodiment, the mask stages 12A and 12B are moved in the Y direction integrally with the projection optical systems PLA and PLB by the optical system stages 36A and 36B. However, the mask stages 12A and 12B are in the optical system stage 36A. , 36B may be moved in the Y direction separately from the projection optical systems PLA, PLB by a moving mechanism. Similarly, the illumination systems 18A and 18B may be moved in the Y direction separately from the projection optical systems PLA and PLB by a moving mechanism different from the optical system stages 36A and 36B.

  Further, for example, when the adjustment amount of the interval in the Y direction of the projection areas EA and EB is short, the width in the Y direction of the mask stages 12A and 12B (the width in the Y direction of the pattern area of the mask) and the illumination systems 18A and 18B The width of the illumination area in the Y direction may be increased in advance, and the mask base that supports the mask stages 12A and 12B and the illumination systems 18A and 18B may be fixed. In this case, the width and the interval of the illumination area on the mask may be controlled by the variable field stop in the illumination systems 18A and 18B according to the target values of the width and the interval in the Y direction of the projection areas EA and EB.

  In addition, when using, for example, an enlargement magnification projection optical system as the plurality of projection optical systems, a mask pattern for the plurality of projection optical systems is formed on one common mask, and the mask is held by one mask stage. Then, it may move in the X direction. In this case, for example, the pattern to be transferred may be selected by controlling the position of the illumination area, and the adjustment of the position of the projection image of the plurality of projection optical systems may be performed using the image position shift function in each projection optical system. Good.

  Further, an encoder may be used instead of at least a part of the interferometers constituting the optical stage interferometer system 27, the mask interferometer systems 28 and 29, and the plate interferometer system 30 of FIG. An encoder system is provided in addition to the interferometer systems 28 and 29, the plate interferometer system 30 and the like, and the positional information of the mask stages 12A and 12B and the plate stage 14 is measured by a hybrid system of the interferometer system and the encoder system. May be.

Further, without providing the optical system interferometer system 27 (laser interferometers 27A and 27B), for example, the Y-axis laser interferometers 28Y and 29Y of the mask interferometer systems 28 and 29 are used to adjust the optical system stages 36A and 36B. You may measure the position of a Y direction.
Further, the use of the exposure apparatus of the present invention is not limited to an exposure apparatus for liquid crystal that transfers a liquid crystal display element pattern onto a square glass plate. For example, other display elements such as a plasma display, semiconductor elements, and thin films The present invention can be widely applied to an exposure apparatus for manufacturing a magnetic head and an exposure apparatus for manufacturing a micro device (electronic device) such as a micro machine or a mask used in a DNA chip or other exposure apparatus. Note that the object to be exposed is not limited to the glass plate, and may be another object such as a wafer, a ceramic substrate, a film member, or a mask blank.

  As described above, the present invention is not limited to the above-described embodiment, and various configurations can be taken without departing from the gist of the present invention.

1 is a perspective view schematically showing a configuration of an exposure apparatus according to a first embodiment. It is a top view which shows drive mechanisms, such as mask stage 12A, 12B of FIG. FIG. 3 is a partially cutaway view showing an optical system supported by optical stage 36A, 36B of FIG. It is a side view which shows the optical system supported by the optical system stage 36B of FIG. It is a block diagram which shows the control system of the exposure apparatus of FIG. (A) is a diagram showing the arrangement of projection areas EA and EB of the first embodiment, (B) is a plan view showing a plate with 6 chamfers, and (C) is a plan view showing a plate with 8 chamfers. It is a perspective view which shows an example of the change of the positional relationship of the masks MA and MB and plate during exposure by 6 chamfering. It is a perspective view which shows an example of the change of the positional relationship of the masks MA and MB during exposure by 8 chamfering, and a plate. It is a flowchart which shows an example of the exposure operation | movement of 1st Embodiment. (A) is a figure which shows an example of the positional relationship of the plate, projection area | region EA, EB, and a mask in the case of performing 8 chamfering in 2nd Embodiment, (B) is the relative movement direction of projection area | region EA, EB with respect to a plate. It is a figure which shows an example. It is a figure which shows an example of the positional relationship of the plate, projection area | region EA, EB, and a mask in the case of performing 6 chamfering in 2nd Embodiment. It is a figure which shows an example of the change of the positional relationship of the plate and projection area | region EA, EB which are exposed by 6 chamfering in 2nd Embodiment. It is a perspective view which shows schematic structure of the exposure apparatus of 3rd Embodiment. (A) is a figure which shows an example of the change of the relative position of an illumination area | region and exposure area | region, a mask, and a plate in the case of exposing to pattern transfer area | region SA1, SA2, SA5, SA6 of the plate of FIG. 13, (B) is a figure. It is a figure which shows an example of the change of the relative position of the illumination area | region and exposure area | region, and a mask and a plate in the case of exposing to pattern transfer area | region SA3 of SA13, SA4, SA7, SA8. It is a flowchart for demonstrating the method to manufacture a liquid crystal display element.

  MA, MB ... mask, PLA, PLB ... projection optical system, PT ... plate, EA, EB ... exposure area, SA1-SA8 ... pattern transfer area, 2MA-2ME, 3MA-3ME ... illumination area, 2PA-2PE, 3PA- 3PE: Projection area, 6: Base member, 8 ... Optical system frame, 10 ... Exposure apparatus, 12A, 12B ... Mask stage, 14 ... Plate stage, 16A-16E ... Projection optical module, 18A, 18B ... Illumination system, 25 ... Optical stage drive system, 27 ... Optical stage interferometer system, 28, 29 ... Mask interferometer system, 30 ... Plate interferometer system, 34A, 34B ... Y-axis guide, 36A, 36B ... Optical system stage, 38A, 38B ... X-axis guide

Claims (31)

In an exposure apparatus that exposes a substrate held on a substrate stage via a mask pattern held on the mask stage,
A plurality of projection optical systems for projecting an image of the mask pattern onto a plurality of exposure areas on the substrate;
A stage mechanism for moving the mask stage and the substrate stage in synchronization with a scanning direction;
An interval control mechanism for controlling an interval in the non-scanning direction orthogonal to the scanning direction of the plurality of projection optical systems, corresponding to the arrangement of the plurality of exposure regions;
An exposure apparatus comprising:   The interval control mechanism acquires arrangement correspondence information corresponding to the arrangement of the plurality of exposure regions, and controls the intervals in the non-scanning direction of the plurality of projection optical systems based on the arrangement correspondence information. The exposure apparatus according to claim 1.   The exposure apparatus according to claim 2, wherein the arrangement correspondence information includes information corresponding to at least one of a region width and a region interval of the plurality of exposure regions in the non-scanning direction.   The interval control mechanism includes an interval adjustment mechanism that moves at least one of the plurality of projection optical systems to adjust an interval in the non-scanning direction of the plurality of projection optical systems. 4. The exposure apparatus according to any one of 3. A plurality of the mask stages are provided corresponding to the plurality of projection optical systems,
The said space | interval control mechanism controls the space | interval of the said non-scanning direction of the said some mask stage corresponding to the space | interval of the said non-scanning direction of these projection optical systems. The exposure apparatus according to any one of the above.   The interval control mechanism includes an interval control stage that integrally moves one projection optical system of the plurality of projection optical systems and one corresponding mask stage in the non-scanning direction. The exposure apparatus according to claim 5.   The interval control mechanism includes a plurality of interval control stages that integrally move the plurality of projection optical systems and the corresponding mask stages in the non-scanning direction, respectively. Item 7. The exposure apparatus according to Item 6. A frame mechanism that supports the spacing control mechanism with respect to a base member of the substrate stage;
The exposure apparatus according to claim 1, further comprising a measurement device that is supported by the frame mechanism and measures position information of the mask stage.   The interval control mechanism includes a projection width setting mechanism that sets a projection width in the non-scanning direction of the pattern image projected by the projection optical system, and corresponds to the arrangement of the plurality of exposure regions in the non-scanning direction. The exposure apparatus according to claim 1, wherein the projection width is controlled. A plurality of illumination devices are provided corresponding to the plurality of projection optical systems, and irradiates exposure light onto the substrate through the mask pattern and the projection optical system,
The said space | interval control mechanism controls the space | interval of the said non-scanning direction of the said some illuminating device according to the space | interval of the said non-scanning direction of the said some projection optical system. The exposure apparatus according to any one of the above.   The projection optical system includes a plurality of partial projection optical systems arranged in the non-scanning direction, and the plurality of partial projection optical systems each project a partial image of the corresponding pattern onto the substrate. The exposure apparatus according to claim 1, wherein   The exposure apparatus according to claim 1, wherein the projection optical system projects the image of the pattern at an equal magnification.   The exposure apparatus according to claim 1, wherein the projection optical system projects an image of the pattern in an enlarged manner.   The stage mechanism moves the mask stage and the substrate stage in synchronization with the scanning direction in a state where the projection optical system projects an image of the mask pattern onto the substrate. The exposure apparatus according to any one of 1 to 13.   The interval control mechanism acquires arrangement correspondence information corresponding to a predetermined arrangement of the plurality of exposure areas, and based on a length L of the substrate in the non-scanning direction, the non-scanning of the plurality of projection optical systems. 15. The direction interval is set to L / 3, and the projection width in the non-scanning direction of the pattern image projected by the projection optical system is set to L / 3. An exposure apparatus according to claim 1.   The interval control mechanism acquires arrangement correspondence information corresponding to a predetermined arrangement of the plurality of exposure areas, and based on a length L of the substrate in the non-scanning direction, the non-scanning of the plurality of projection optical systems. 15. The direction interval is set to L / 4, and the projection width in the non-scanning direction of the pattern image projected by the projection optical system is set to L / 4. An exposure apparatus according to claim 1. Using the exposure apparatus according to any one of claims 1 to 16, a step of transferring an image of a pattern formed on the mask to the substrate;
Developing the substrate on which the pattern image has been transferred, and forming a transfer pattern layer having a shape corresponding to the pattern image on the substrate;
Processing the substrate via the transfer pattern layer;
A device manufacturing method comprising: In an exposure method for exposing a substrate through a mask pattern,
A synchronous movement step of moving the mask and the substrate in synchronization with a scanning direction in a state in which an image of the mask pattern is projected onto a plurality of exposure regions on the substrate via a plurality of projection optical systems;
An interval control step for controlling an interval in the non-scanning direction orthogonal to the scanning direction of the plurality of projection optical systems, corresponding to the arrangement of the plurality of exposure regions;
An exposure method comprising:   The interval control step includes an information acquisition step of acquiring arrangement correspondence information corresponding to the arrangement of the plurality of exposure areas, and controls the intervals in the non-scanning direction of the plurality of projection optical systems based on the arrangement correspondence information. The exposure method according to claim 18, wherein:   The exposure method according to claim 19, wherein the arrangement correspondence information includes information corresponding to at least one of each region width and each region interval of the plurality of exposure regions in the non-scanning direction.   19. The interval control step includes an interval adjustment step of adjusting at least one of the plurality of projection optical systems to adjust the interval in the non-scanning direction of the plurality of projection optical systems. 21. The exposure method according to any one of 20. A plurality of the mask stages are provided corresponding to the plurality of projection optical systems,
The interval control step includes a stage interval adjustment step of adjusting the intervals in the non-scanning direction of the plurality of mask stages corresponding to the intervals in the non-scanning direction of the plurality of projection optical systems. The exposure apparatus according to any one of claims 18 to 21.   The distance control step moves one projection optical system of the plurality of projection optical systems and one mask stage corresponding to the projection optical system integrally in the non-scanning direction. The exposure method according to 22.   The exposure according to claim 22 or 23, wherein in the interval control step, the plurality of projection optical systems and the plurality of mask stages corresponding thereto are respectively moved in the non-scanning direction. Method.   The said space | interval control process includes the measurement process of measuring the positional information on the said mask stage with respect to the frame mechanism fixed with respect to the base member of the said substrate stage, The one of Claim 18-24 characterized by the above-mentioned. The exposure method as described.   The interval control step includes a projection width setting step of setting a projection width in the non-scanning direction of the pattern image projected by the projection optical system, and the non-scanning direction corresponds to the arrangement of the plurality of exposure regions. The exposure method according to any one of claims 18 to 25, wherein the projection width is controlled.   In the interval control step, for each of the projection optical systems, the mask pattern and the intervals in the non-scanning direction of a plurality of illumination devices that irradiate the substrate with exposure light via the projection optical system are determined. 27. The exposure method according to any one of claims 18 to 26, further comprising an illumination interval adjustment step of adjusting the system in correspondence with the interval in the non-scanning direction.   The exposure method according to any one of claims 18 to 27, further comprising a substrate moving step of moving the substrate in the non-scanning direction with respect to the plurality of projection optical systems.   The interval control step includes an information acquisition step of acquiring arrangement correspondence information corresponding to the arrangement of the plurality of exposure regions. When the predetermined arrangement correspondence information is acquired, the length L of the substrate in the non-scanning direction is acquired. Based on the above, the interval in the non-scanning direction of the plurality of projection optical systems is set to L / 3, and the projection width in the non-scanning direction of the pattern image projected by the projection optical system is set to L / 3 The exposure method according to any one of claims 18 to 28, wherein the exposure method is set.   The interval control step includes an information acquisition step of acquiring arrangement correspondence information corresponding to the arrangement of the plurality of exposure regions. When the predetermined arrangement correspondence information is acquired, the length L of the substrate in the non-scanning direction is acquired. Based on the above, the interval in the non-scanning direction of the plurality of projection optical systems is set to L / 4, and the projection width in the non-scanning direction of the pattern image projected by the projection optical system is set to L / 4. The exposure method according to any one of claims 18 to 28, wherein the exposure method is set. Using the exposure method according to any one of claims 18 to 30, a step of transferring an image of a pattern formed on the mask to the substrate;
Developing the substrate on which the pattern image has been transferred, and forming a transfer pattern layer having a shape corresponding to the pattern image on the substrate;
Processing the substrate via the transfer pattern layer;
A device manufacturing method comprising:

Images