JP2010002673A - Electro-optical device, and method for manufacturing electro-optical device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electro-optical device capable of setting properly a brightness of a display image, and to provide electronic equipment. <P>SOLUTION: The electro-optical device has: a pair of substrates constituted of the first and second substrates; a pixel area formed on the first substrate 10; a photoreception element formed in a pixel area peripheral part; a light-shielding film formed in a position opposed to the pixel area peripheral part on the second substrate; a P-type semiconductor area 210p, an intrinsic area 210i and an N-type semiconductor area 210n formed in the photoreception element; and an opening part formed in a position opposed to the intrinsic area 210i of the light-shielding film, wherein a light-shielding metal film is not arranged in a portion with the opening part overlapped with the intrinsic area 210i on the first substrate 10, in top view. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an electro-optical device and a method for manufacturing the electro-optical device.

Conventionally, electro-optical devices such as liquid crystal display devices are known. The electro-optical device includes, for example, a liquid crystal panel and a backlight that supplies light to the liquid crystal panel.
The liquid crystal panel includes a TFT array substrate in which thin film transistors (hereinafter referred to as TFT (Thin Film Transistor)) serving as switching elements, which will be described later, are arranged in a matrix, a counter substrate disposed to face the TFT array substrate, a TFT array And a liquid crystal as an electro-optical material provided between the substrate and the counter substrate.

The TFT array substrate includes a plurality of scanning lines provided at predetermined intervals, and a plurality of data lines that intersect the scanning lines and are provided at predetermined intervals.
Pixels are provided at intersections between the scanning lines and the data lines. The pixel includes the above-described TFT and a pixel electrode. A plurality of pixels are arranged in a matrix to form a display area. A scanning line is connected to the gate electrode of the TFT, a data line is connected to the source electrode of the TFT, and a pixel electrode is connected to the drain electrode of the TFT.
The counter substrate includes a common electrode provided to face the pixel electrode.

  The above electro-optical device operates as follows. That is, all the pixels related to a predetermined scanning line are selected by supplying the selection voltage to the scanning line in a line sequential manner. Then, an image signal is supplied to the data line in synchronization with the selection of the pixel. As a result, the image signal is supplied to all the pixels selected by the selection voltage, and the image data is written into the pixel electrode.

  When image data is written to the pixel electrode, a driving voltage is applied to the liquid crystal due to a potential difference between the pixel electrode and the common electrode. As a result, the alignment and order of the liquid crystal change, the light from the backlight that transmits the liquid crystal changes, and gradation display is performed.

  By the way, the visibility of the display of the electro-optical device varies depending on the brightness around the electro-optical device due to ambient light such as sunlight. That is, as the surroundings of the electro-optical device become brighter, the difference between the brightness of the display area of the electro-optical device and the brightness of the surroundings of the electro-optical device becomes smaller, so the visibility of the display of the electro-optical device decreases.

Therefore, an electro-optical device including an optical sensor (light receiving element) that detects the amount of ambient light has been proposed (see, for example, Patent Document 1).
According to this proposal, the amount of ambient light is detected by the optical sensor, and the output of the backlight is controlled in accordance with the detected amount of ambient light. For this reason, the visibility of the display of the electro-optical device can be improved by adjusting the amount of light supplied from the backlight to the liquid crystal panel according to the brightness around the electro-optical device.

  In the optical sensor, a sensor unit in which an opening is provided in a black matrix (BM) and a reference unit that performs a dark reference output (reference) that is completely shielded from light by the BM are arranged and irradiated with ambient light. Based on the leakage current detected in this way, the optical sensor is turned on / off based on the result of comparison between the reference unit and the sensor unit. The light sensor is disposed around the display area, and a light shielding film for preventing light emitted from the backlight for the purpose of improving the detection accuracy of the light sensor is disposed in the reference portion and the sensor portion.

JP 2005-352490 A

  However, in recent years, the frame portion where the precision and narrowing of the frame have progressed and the routing wiring (signal lines) and the like are densely packed is in a state where there is no free space for arranging the optical sensor and the like. Furthermore, it is difficult to arrange the light shielding film with the wiring space away from the design. As a result, the light shielding film is formed so as to overlap the wiring, resulting in a parasitic capacitance. The optical sensor is calculated by current × capacitance = time constant. However, when the time constant is increased, there is a problem that the detection time becomes longer and the detection response is lowered = sensor sensitivity is deteriorated. Also, the area of the light-shielding film is designed to be as small as possible so as not to have a capacitance. However, by designing the area of the light-shielding film to be small, the light-shielding part is designed with the same area, but it is actually formed. In this case, due to subtle differences in exposure amount of the exposure apparatus and meandering movement such as carrying in the substrate of the apparatus, the area of the light-shielding film partially disposed on the sensor unit and the reference unit differs, and the light irradiated from the backlight The area of the light shielding film to be prevented is different. For this reason, the amount of received light varies, and the detection accuracy of the optical sensor is deteriorated.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 A pair of substrates formed of a first substrate and a second substrate, a pixel region formed on the first substrate, a light receiving element formed in the periphery of the pixel region, and the second substrate A light shielding film formed at a position facing the periphery of the pixel region on the upper side, a P-type semiconductor region, an intrinsic region and an N-type semiconductor region formed in the light-receiving element, and the intrinsic region of the light-shielding film; A light-shielding metal film is not disposed in a portion where the opening and the intrinsic region overlap each other on the first substrate in plan view. An electro-optical device.

  According to this, the plurality of pixel portions are arranged in a matrix in a pixel region on a substrate such as a quartz substrate. Here, the “pixel area” does not mean an area of individual pixels, but means an entire area in which a plurality of pixels are arranged in a plane, and is typically an “image display area” or “display area”. Is equivalent to.

  The pixel portion is typically provided corresponding to each of a plurality of scan lines and a plurality of data lines intersecting with each other on the substrate, and each of the scan lines and the data lines is electrically connected. Connected. The pixel unit includes a pixel switching element that is supplied by a data line and selectively applies, for example, an image signal, and a pixel electrode that holds the input image signal.

  For example, a light receiving element such as a lateral PIN diode includes a P-type semiconductor region, an intrinsic region, and an N-type semiconductor region that do not overlap each other in a planar manner, and is disposed in a peripheral region located around the pixel region. .

  The light shielding film region on the second substrate side has an opening corresponding to at least a part of the intrinsic region. The region located in the opening as viewed in plan on the substrate has a portion where the light-shielding metal film is not disposed. In other words, the light-shielding metal film is not disposed in at least a part of the intrinsic region as viewed in plan on the substrate.

  By forming an intrinsic region between the P-type semiconductor region and the N-type semiconductor region, the depletion layer spreads and the photoelectric conversion efficiency is improved. However, if viewed in plan on the substrate, the intrinsic region is shielded from light. When the light-shielding metal film is disposed, the light-shielding metal film is formed of a material such as molybdenum or the like with a low light transmittance, so that light incident on the electro-optical device is transmitted by the light-shielding metal film. The light receiving efficiency of the light receiving element is significantly reduced. As a result, it may be difficult to set the brightness appropriately when, for example, the brightness of a backlight or the like is set in accordance with the output of the light receiving element.

  However, in the present invention, as described above, the light-shielding metal film is not disposed in the intrinsic region as viewed in plan on the substrate. For this reason, since the light receiving element can receive the light incident on the electro-optical device without being blocked by the light-shielding metal film, the light receiving efficiency can be drastically improved. Therefore, for example, the brightness of the light source can be appropriately set according to the output of the light receiving element, and the brightness of the display image displayed in the pixel area can be appropriately set.

  In the manufacturing process of the electro-optical device, the light receiving element can be formed at the same time as the pixel switching element, which is very advantageous in practice.

  In addition, a light receiving element is provided in a peripheral region located around the pixel region. Therefore, it is possible to secure the ambient light supplied to the light receiving element without reducing the aperture ratio of the pixel.

  Furthermore, even if the light receiving element (for example, low-temperature polysilicon has a low degree of deterioration with respect to light), even if the light from the light source is received on the opposite side of the light receiving element, the PIN diode is not deteriorated. Since it is strong, the resistance value is less likely to cause a leak current, and it is not necessary to form a light shielding layer for shielding backlight light entering from the lower side of the semiconductor layer. For this reason, an extra light shielding film is not formed and overlapped with the wiring formed in the peripheral region via the insulating film. Thereby, generation | occurrence | production of a parasitic capacitance etc. can be suppressed and the detection accuracy of a light receiving element improves.

  In addition, an intrinsic region is disposed in the opening as viewed in plan on the substrate. For this reason, the light-shielding metal film is not disposed in the intrinsic region as viewed in plan on the substrate, so that the light-receiving efficiency of the light-receiving element can be further improved, which is very advantageous in practice.

  Application Example 2 In the above electro-optical device, the opening has an opening having an area larger than that of the intrinsic region.

  According to this, since the light-shielding metal film overlapping the intrinsic region is reduced, the light receiving efficiency of the light receiving element can be further improved.

  Application Example 3 The electro-optical device according to the above-described electro-optical device, wherein n + is added to the entire surface of the intrinsic region.

  According to this, after the intrinsic semiconductor layer is formed, impurities are added to the intrinsic region over the entire surface. Thereafter, a gate insulating film is formed, an n-type dopant is added to the N-type semiconductor region using a resist as a mask, and then a gate electrode and a light-shielding metal film are formed in the pixel region. The light shielding metal film is used as a mask when a p-type dopant is added to the P-type semiconductor region in the manufacturing process of the electro-optical device. In particular, when the light-shielding metal film is simultaneously formed in the same layer as the gate electrode portion of the pixel switching element, simultaneously with the dopant doping process using the gate electrode portion as a mask, the P-type semiconductor region of the light-receiving element Since a dopant can be added to the semiconductor region, it is very advantageous in practice. In addition, when adding a dopant, n + can be added to the whole surface of an intrinsic area | region, and the sensitivity of a light receiving element will be improved.

  Application Example 4 In the electro-optical device, the light receiving element includes at least a pair of a first light receiving element irradiated with external light and a second light receiving element not irradiated with external light, and the first light receiving element. An electro-optical device that determines an amount of received light based on a difference output signal obtained by subtracting the second sensing signal generated from the second light receiving element from the first sensing signal generated from the first sensing signal.

  Here, the “first light receiving element” is a light incident side of the light receiving element and functions as a light detection unit. The “second light receiving element” refers to a reference portion covered with a light shielding film, and functions as a pair with the first light receiving element described above to output the difference between the received light and the second light receiving element. Detect and compare by signals. The light shielding metal film may be laminated on the second light receiving element side of the light receiving element.

  According to this, the electro-optical device includes the first light receiving element that depends on the external light and the second light receiving element, and detects the intensity of the external light from the detection signal of these light receiving elements. The output signal of the difference obtained by subtracting the second sensing signal obtained by the second light receiving element from the one sensing signal is used to make the light sensing of the light receiving element accurate by judging the amount of received light compared with a certain threshold value. And the brightness of the light source can be adjusted.

  Application Example 5 In the above electro-optical device, an opening portion is not formed in the light-shielding film at a position facing the intrinsic region of the second light receiving element.

  According to this, since no opening is formed in the light shielding film at a position facing the semiconductor layer of the second light receiving element, external light is applied to the first light receiving element by the difference obtained by subtracting the second sensing signal from the first sensing signal. Only the value when the resistance value of the semiconductor layer is lowered after irradiation can be detected, and light detection can be performed more accurately.

  Application Example 6 In the electro-optical device, the output side of the first light receiving element and the input side of the second light receiving element are electrically connected, and the output side of the first light receiving element and the second side A signal obtained from the input side of the light receiving element is used as an output signal.

  According to this, the first light receiving element and the second light receiving element are in series, the first sensing signal generated from the first light receiving element, and the second sensing signal (reference) generated from the second light receiving element. By deriving a value obtained by subtracting as an output signal, it is possible to adjust the luminance of the light source depending on whether the value of the output signal is larger or smaller than a certain threshold signal.

  Application Example 7 In the electro-optical device, the light source that supplies light to the pixel region and the control that controls the amount of light supplied from the light source to the pixel region when the output signal exceeds a predetermined threshold value And an electro-optic device.

  According to this, the amount of light supplied from the light source can be controlled according to the brightness around the electro-optical device. Therefore, by increasing the difference between the brightness of the display area of the electro-optical device and the ambient brightness of the electro-optical device, the display visibility of the electro-optical device can be improved regardless of the ambient brightness.

  Application Example 8 A pixel region having a switching element and a light receiving element formed in the periphery of the pixel region are provided, and a light shielding metal film is formed in a portion overlapping the intrinsic region of the light receiving element in plan view A method of manufacturing an electro-optical device, the method comprising: leaving a light-shielding metal film partially on a semiconductor layer of the light-receiving element when forming a gate electrode of the switching element; and using the light-shielding metal film as a mask Adding an impurity to the N-type semiconductor region or the P-type semiconductor region, removing the light-shielding metal film on the light-receiving element, and forming an insulating film on the light-receiving element; A method for manufacturing an electro-optical device.

  According to this manufacturing method, by removing the light-shielding metal film from the light-receiving element portion, it is possible to receive external light incident on the light-receiving element without shielding it, and sensor sensitivity is improved. In addition, since it is possible to add impurities to the entire surface of the intrinsic region, the sensor sensitivity is improved. At this time, in the step of adding impurities to the intrinsic region, it is possible to obtain a light receiving element having good sensitivity as a sensor without adding it according to the judgment of the user.

  Hereinafter, an electro-optical device and an electronic apparatus will be described with reference to the drawings. In the drawings referred to in each embodiment, each layer and each member are displayed in different scales so that each layer and each member have a size that can be recognized on the drawing. In the following embodiments, as an example of an electro-optical device, a TFT active matrix driving type liquid crystal device with a built-in driving circuit is cited.

(First embodiment)
<Liquid crystal device>
(Configuration of liquid crystal device)
First, the configuration of the liquid crystal device will be described with reference to FIGS.
FIG. 1 is a plan view of a liquid crystal device 100 according to the present embodiment as viewed from the counter substrate (second substrate) 20 side together with the components formed on the TFT array substrate (first substrate) 10. FIG. 2 is a cross-sectional view taken along the line II-II ′ of FIG.

  1 and 2, in the liquid crystal device 100, the TFT array substrate 10 and the counter substrate 20 are arranged to face each other. The TFT array substrate 10 as an example of the “substrate” includes a substrate such as a quartz substrate, a glass substrate, or a silicon substrate, and the counter substrate 20 includes a substrate such as a quartz substrate or a glass substrate. A liquid crystal layer 50 is sealed between the TFT array substrate 10 and the counter substrate 20, and the TFT array substrate 10 and the counter substrate 20 are sealed around an image display region 10a as an example of a “pixel region”. They are bonded to each other by a sealing material 52 provided in the region.

  The sealing material 52 is made of, for example, an ultraviolet curable resin, a thermosetting resin, or an ultraviolet / heat combination type curable resin for bonding the two substrates, and is applied to the TFT array substrate 10 in the manufacturing process, and then irradiated with ultraviolet rays. And cured by heating or the like. In the sealing material 52, a gap material such as glass fiber or glass beads for dispersing the distance (ie, gap) between the TFT array substrate 10 and the counter substrate 20 to a predetermined value is dispersed. Note that the gap material may be arranged in the image display region 10a or a peripheral region located around the image display region 10a in addition to or instead of the material mixed in the seal material 52.

  In FIG. 1, a frame light-shielding film (light-shielding film) 53 that defines the image display area 10a is provided on the counter substrate 20 side in parallel with the inside of the seal area 52a where the seal material 52 is disposed. Yes. However, part or all of the frame light shielding film 53 may be provided as a built-in light shielding film on the TFT array substrate 10 side.

  In the peripheral region, the data line driving circuit 101 and the external circuit connection terminal 102 are provided along one side of the TFT array substrate 10 in a region located outside the sealing region 52 a where the sealing material 52 is disposed. The sampling circuit 7 is provided so as to be covered with the frame light-shielding film 53 on the inner side of the seal region 52a along the one side. The scanning line driving circuit 104 is provided so as to be covered with the frame light shielding film 53 in the frame area inside the seal area 52a along two sides adjacent to the one side.

  On the TFT array substrate 10, vertical conduction terminals 106 for connecting the two substrates with the vertical conduction material 107 are arranged in regions facing the four corner portions of the counter substrate 20. Thus, electrical conduction can be established between the TFT array substrate 10 and the counter substrate 20. Further, a lead wiring 90 for electrically connecting the external circuit connection terminal 102 to the data line driving circuit 101, the scanning line driving circuit 104, the vertical conduction terminal 106, and the like is formed.

  In FIG. 2, on the TFT array substrate 10, a laminated structure is formed in which pixel switching TFTs as drive elements and wiring such as scanning lines and data lines are formed. The plurality of scanning lines and the plurality of data lines are wired so as to intersect with each other, and pixel portions corresponding to the pixels are provided in a matrix corresponding to these intersections. Although the detailed configuration of this laminated structure is not shown in FIG. 2, pixel electrodes 9a made of a transparent material such as ITO (Indium Tin Oxide) are provided on the laminated structure with a predetermined pattern for each pixel. It is formed in an island shape.

  The pixel electrode 9a is formed in the image display region 10a on the TFT array substrate 10 so as to face a counter electrode 21 described later. On the surface of the TFT array substrate 10 facing the liquid crystal layer 50, that is, on the pixel electrode 9a, an alignment film 16 is formed so as to cover the pixel electrode 9a.

Here, the pixel unit 9 will be described with reference to FIG.
FIG. 3 is an equivalent circuit of various elements, wirings, etc. in the pixel unit 9 according to this embodiment.

  As shown in FIG. 3, a pixel electrode 9a and a TFT 30 as an example of a “pixel switching element” for switching control of the pixel electrode 9a are formed in each of the plurality of pixel portions 9. The TFT 30 includes a semiconductor portion including a source region and a drain region that do not overlap with each other in a plane, and a gate electrode portion. A data line 6 a for supplying an image signal is electrically connected to the source region of the TFT 30. Further, the gate electrode is electrically connected to the gate electrode portion of the TFT 30, and the scanning signal is applied in a pulsed manner to the scanning line 11a and the gate electrode at a predetermined timing.

  The pixel electrode 9a is electrically connected to the drain region of the TFT 30, and an image signal supplied from the data line 6a is written at a predetermined timing by closing the switch of the TFT 30 as a switching element for a certain period. .

  An image signal of a predetermined level written in the liquid crystal via the pixel electrode 9a is formed on the counter substrate 20 (see FIG. 2) and between the counter electrode 21 (see FIG. 2) having the common potential LCCOM. Hold for a certain period. The liquid crystal modulates light and enables gradation display by changing the orientation and order of the molecular assembly depending on the applied voltage level. In the normally white mode, the transmittance for incident light is reduced according to the voltage applied in units of each pixel unit 9, and in the normally black mode, the voltage applied in units of each pixel unit 9 is reduced. Accordingly, the transmittance for incident light is increased, and light having a contrast corresponding to an image signal is emitted from the liquid crystal device 100 as a whole.

  In order to prevent the data signal held here from leaking, a storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 9 a and the counter electrode 21. One electrode of the storage capacitor 70 is provided side by side with the scanning line 11a, is electrically connected to the capacitor line 300 having the common potential LCCOM, and functions as a fixed potential side capacitor electrode. The other electrode of the storage capacitor 70 is electrically connected to the pixel electrode 9a and functions as a pixel potential side capacitor electrode.

  1 and 2 again, the light shielding layer 23 is formed on the surface of the counter substrate 20 facing the TFT array substrate 10. For example, the light shielding layer 23 is formed in a lattice shape when viewed in plan on the facing surface of the facing substrate 20. In the counter substrate 20, a non-opening area is defined by the light shielding layer 23, and an area partitioned by the light shielding layer 23 is an opening area through which light emitted from a backlight for direct viewing is transmitted, for example. The light shielding layer 23 may be formed in a stripe shape or a delta shape, and the non-opening region may be defined by the light shielding layer 23 and various components such as a data line provided on the TFT array substrate 10 side. .

  A counter electrode 21 made of a transparent material such as ITO is formed on the light shielding layer 23 so as to face the plurality of pixel electrodes 9a. In order to perform color display in the image display region 10a on the light shielding layer 23, a color filter (not shown in FIG. 2) may be formed in a region including a part of the opening region and the non-opening region. An alignment film 22 is formed on the counter electrode 21 on the counter surface of the counter substrate 20.

  In addition to the data line driving circuit 101, the scanning line driving circuit 104, the sampling circuit 7 and the like, a predetermined voltage is applied to a plurality of data lines in the peripheral region on the TFT array substrate 10 shown in FIGS. A precharge circuit for supplying a level precharge signal in advance of an image signal, an inspection circuit for inspecting the quality, defects, etc. of the liquid crystal device during manufacture or at the time of shipment may be formed.

Here, the liquid crystal device 100 will be described with reference to FIG.
FIG. 4 is a block diagram illustrating a configuration of the liquid crystal device 100 according to the present embodiment. The liquid crystal device 100 includes a liquid crystal panel AA, an external drive circuit 91 that drives the liquid crystal panel AA, and a backlight 31 as a light source. The liquid crystal device 100 performs transmissive display using light from the backlight 31.

  The liquid crystal panel AA includes an image display area 10a formed by arranging a plurality of pixel portions 9 on a matrix. In the peripheral area of the image display area 10 a, a photoelectric conversion circuit 81 that converts ambient light supplied as external light into an electrical signal and outputs it, a scanning line drive circuit 104 that drives the pixel unit 9, and a data line drive circuit 101. Is provided.

  That is, the photoelectric conversion circuit 81 is provided in a region excluding the region where the pixel electrode 9a is formed on the TFT array substrate 10 (see FIG. 2), that is, a region excluding the image display region 10a in the liquid crystal panel AA. In the vicinity of the data line driving circuit 101, light is detected when the mounting component 32 that is an interface between the liquid crystal panel AA and the external driving circuit 91 and the electrical signal output from the photoelectric conversion circuit 81 exceed a predetermined threshold. A determination circuit 82 is provided for determining that the determination has been made.

  The backlight 31 is provided on the back surface of the liquid crystal panel AA, and is composed of, for example, a cold cathode fluorescent tube (CCFL) or an LED (light emitting diode), and supplies light to the pixel unit 9 of the liquid crystal panel AA.

  The external drive circuit 91 includes a power supply circuit 92 that supplies power to the liquid crystal panel AA, an image processing circuit 93 that supplies image signals to the liquid crystal panel AA, and a clock signal and a start signal to the image processing circuit 93 and the liquid crystal panel AA. A timing generation circuit 94 for outputting, and a backlight control circuit 95 for controlling the amount of light (amount of received light) supplied from the backlight 31 to the pixel unit 9 are provided.

  The power supply circuit 92 supplies a driving signal to the liquid crystal panel AA, and drives the scanning line driving circuit 104, the data line driving circuit 101, and the like.

  The image processing circuit 93 performs γ correction on the input image data in consideration of the light transmission characteristics of the liquid crystal panel AA, and then D / A converts the image data of each color to generate an image signal. Supply to AA.

  The timing generation circuit 94 generates a clock signal and a start signal in synchronization with input image data input to the image processing circuit 93 and supplies the clock signal and the start signal to the scanning line driving circuit 104 and the data line driving circuit 101 on the liquid crystal panel AA. . Further, the timing generation circuit 94 generates various timing signals and outputs them to the image processing circuit 93.

  FIG. 5 is a circuit diagram showing a configuration of the photoelectric conversion circuit 81 and the determination circuit 82 of the liquid crystal device 100 according to the present embodiment. The photoelectric conversion circuit 81 includes a first PIN type diode (first light receiving element) 210 and a second PIN type diode (second light receiving element) 211. These light receiving elements are connected in series, and the output side of the first PIN diode 210 and the input side of the second PIN diode 211 are electrically connected. A signal obtained between the output side of the first PIN type diode 210 and the input side of the second PIN type diode 211 is an output signal. Ambient light incident on the liquid crystal panel AA (see FIG. 4) is supplied to the first PIN diode 210 through the opening 88 in the peripheral area of the image display area 10a. The opening 88 is formed on the counter substrate 20 (see FIG. 2) side. The opening 88 may have an opening having an area larger than the area of the intrinsic region 210i (see FIG. 6). Thereby, since the light-shielding conductive film overlapping the intrinsic region 210i is eliminated, the light receiving efficiency of the first PIN diode 210 can be further improved. The opening 88 is formed at a position facing the frame light shielding film 53 (see FIG. 1) in the periphery of the image display region 10a (see FIG. 1). The first PIN diode 210 also receives light from the backlight 31 (see FIG. 4). The first PIN diode 210 converts the supplied ambient light and the light of the backlight 31 into an electrical signal (first sensing signal). Ambient light is not supplied to the second PIN diode 211 and is blocked. The second PIN type diode 211 is covered with the frame light shielding film 53. The second PIN diode 211 receives light from the backlight 31. The second PIN diode 211 converts the light of the backlight 31 into an electrical signal (second sensing signal). No opening is formed in the frame light-shielding film 53 at a position facing the intrinsic region 210 i of the second PIN diode 211. Thereby, it is possible to detect only the value when the first PIN diode 210 is irradiated with external light and the resistance value of the semiconductor layer is lowered, and it is possible to detect light more accurately. The photoelectric conversion circuit 81 utilizes the property that the leakage current flowing through the first and second PIN diodes 210 and 211 increases in proportion to the amount of light. The peripheral area of the image display area 10 a is formed by a black matrix 89. According to this, ambient light does not enter the second PIN diode 211.

  The output current of the photoelectric conversion circuit 81 is a difference (comparison) between the current generated in the first PIN diode 210 and the current generated in the second PIN diode 211. Specifically, the cathode electrode of the first PIN type diode 210 is connected to the high potential power supply VHH via the wiring 85, and the anode electrode of the first PIN type diode 210 is connected to the second potential via the wiring 86. It is connected to the cathode electrode of the PIN type diode 211. The anode electrode of the second PIN diode 211 is connected to the low potential power supply VLL through the wiring 87. Thereby, a reverse bias voltage is applied to the first PIN type diode 210 and the second PIN type diode 211, and a current as an electric signal is generated.

  The current generated in the first PIN diode 210 changes depending on factors other than ambient light, such as the temperature of the PIN diode itself, in addition to ambient light. On the other hand, the current generated in the second PIN diode 211 changes depending on factors other than the ambient light such as the temperature of the PIN diode itself because the ambient light is blocked. Therefore, the photoelectric conversion circuit 81 obtains a difference between the current generated in the first PIN diode 210 and the current generated in the second PIN diode 211, so that other than ambient light such as the temperature of the PIN diode. The current is output based only on the ambient light incident on the liquid crystal panel AA while offsetting the influence of the factors. At this time, since it is necessary to provide a potential difference to flow a current, for example, a voltage of 6 V is applied as an electromotive force to provide a potential difference from the light leakage current. As a result, a current flows to the determination circuit 82.

  The determination circuit 82 converts the current output from the photoelectric conversion circuit 81 into a voltage, and determines that light is detected when the voltage exceeds a predetermined threshold. Specifically, the determination circuit 82 includes a current-voltage conversion circuit 821 that converts a current into a voltage and outputs the voltage, and a light detection circuit 822 that outputs a light detection signal described later.

  The current / voltage conversion circuit 821 receives the current output from the photoelectric conversion circuit 81. The current-voltage conversion circuit 821 converts the input current into a voltage and outputs the voltage.

  The light detection circuit 822 receives the voltage output from the current-voltage conversion circuit 821. A voltage of a specified voltage (for example, 5 V) is output to the light detection circuit 822 by the current-voltage conversion circuit 821. The light detection circuit 822 performs dimming of the backlight 31 according to the time until the power is stored. For example, if the storage time is long, it is determined that the ambient light hitting the first PIN diode 210 is weak and the outside is determined to be dark. As a result, sensing is performed by a method in which the brightness of the backlight 31 is lowered and the brightness is adjusted to the brightness according to the environment. On the other hand, if the storage time is short, it is determined that the ambient light hitting the first PIN diode 210 is strong and the outside is bright.

  The voltage output from the current-voltage conversion circuit 821 flows to the light detection circuit 822. For example, the light detection circuit 822 ignores fluctuations (chattering, noise) of a voltage shorter than 30 μsec, sets a unit of time of 30 μsec or more as one unit, and does not pick up a short output from the current-voltage conversion circuit 821. As a result, small noise and the like are not picked up, so that the light detection circuit 822 serves as a filter. Then, the voltages detected in a certain large section are averaged, and the data is output to the backlight control circuit 95. Since the voltage of the current-voltage conversion circuit 821 is basically small, an inverter element that gradually increases is provided in the light detection circuit 822 in order to increase the output so as to increase the output voltage.

  The reset unit 99 supplies a constant voltage (for example, 2.5 V), and the reset period is determined based on a specified period. When the reset switch is turned on, the voltage is maintained at a constant voltage, and is stored in the capacitor unit until the voltage changes from the constant voltage to a threshold voltage (for example, 3 V).

  Thereafter, the backlight 31 is turned on by a signal output from the light detection circuit 822 to the backlight control circuit 95. The first and second PIN diodes 210 and 211 are connected in series. According to this, the electro-optical device includes the first light receiving element that depends on the external light and the second light receiving element that is blocked from the external light, and the intensity of the external light is determined from the sensing signal of these light receiving elements. By judging, the light sensing of the light receiving element can be made accurate, and the luminance of the light source can be adjusted.

  Returning to FIG. 4, the backlight control circuit 95 controls the light amount of the backlight 31 by outputting a signal for controlling the luminance to the backlight 31 based on the light detection signal output from the determination circuit 82. . Specifically, if the light detection signal is at the H level, the backlight control circuit 95 determines that the amount of ambient light is large, that is, the surroundings are bright, and increases the amount of light of the backlight 31. On the other hand, if the light detection signal is at L level, it is determined that the amount of ambient light is small, that is, the surrounding is dark, and the amount of light of the backlight 31 is decreased. According to this, the amount of light supplied from the backlight 31 can be controlled in accordance with the brightness around the liquid crystal device 100. Therefore, by increasing the difference between the brightness of the display area of the liquid crystal device 100 and the ambient brightness of the liquid crystal device 100, the visibility of the display of the liquid crystal device 100 can be improved regardless of the ambient brightness.

Hereinafter, the configuration of the liquid crystal panel AA will be described in detail.
The liquid crystal panel AA includes a plurality of scanning lines 11a and capacitance lines 300, and a plurality of data lines 6a that intersect the scanning lines 11a and capacitance lines 300 and are provided at predetermined intervals. It is provided at the intersection of the scanning line 11a and each capacitance line 300 and each data line 6a.

  The pixel unit 9 includes a TFT 30 as a switching element, a pixel electrode 9a, a counter electrode 21 (see FIG. 2) facing the pixel electrode 9a, one end connected to the pixel electrode 9a, and the other end connected to the capacitor line 300. The storage capacity 70 is configured.

  The scanning electrode 11 a is connected to the gate electrode of the TFT 30, the data line 6 a is connected to the source electrode of the TFT 30, and the pixel electrode 9 a and the storage capacitor 70 are connected to the drain electrode of the TFT 30. A liquid crystal is sandwiched between the pixel electrode 9 a and the counter electrode 21. Accordingly, when a selection voltage is applied from the scanning line 11a, the TFT 30 brings the data line 6a, the pixel electrode 9a, and the storage capacitor 70 into a conductive state.

The scanning line driving circuit 104 supplies a selection voltage for making the TFT 30 conductive to each scanning line 11a in a line sequential manner. For example, when a selection voltage is supplied to a certain scanning line 11a, all the TFTs 30 connected to the scanning line 11a are turned on, and all the pixel portions 9 related to the scanning line 11a are selected.
The data line driving circuit 101 supplies an image signal to each data line 6a, and sequentially writes image data to the pixel electrode 9a of the pixel portion 9 via the conductive TFT 30.

The above liquid crystal device 100 operates as follows.
That is, all the pixel portions 9 related to a certain scanning line 11a are selected by supplying the selection voltage from the scanning line driving circuit 104 in a line sequential manner. Then, in synchronization with the selection of the pixel unit 9, an image signal is supplied from the data line driving circuit 101 to the data line 6a. As a result, an image signal is supplied from the data line 6a through the TFT 30 to all the pixel portions 9 selected by the scanning line driving circuit 104 and the data line driving circuit 101, and the image data is written into the pixel electrode 9a.

When image data is written in the pixel electrode 9a, a driving voltage is applied to the liquid crystal due to a potential difference between the pixel electrode 9a and the counter electrode 21. Accordingly, by changing the voltage of the image signal, the orientation and order of the liquid crystal are changed, and gradation display by light modulation of each pixel portion 9 is performed.
The driving voltage applied to the liquid crystal is held by the storage capacitor 70 for a period that is three orders of magnitude longer than the period during which image data is written.

Next, a first PIN type diode 210 (referred to as a PIN type diode 210 as necessary) disposed as an example of the “light receiving element” disposed in the peripheral region of the TFT array substrate 10 will be described with reference to FIGS. The description will be given with reference.
6 is a plan view of the PIN diode 210 according to the present embodiment, FIG. 7A is a cross-sectional view taken along the line VII-VII ′ of FIG. 6, and FIG. It is -VIII 'sectional view taken on the line. 7A and 7B, the liquid crystal layer 50 shown in FIG. 2 is sealed on the upper layer side in the figure.

  As shown in FIGS. 6 and 7, in the light receiving element formed in the peripheral portion of the image display area 10a (see FIG. 1), the PIN diode 210 includes a P-type semiconductor area 210p, an in The trinic region 210 i and the N-type semiconductor region 210 n are included, and are arranged on the buffer insulating film 41 stacked on the TFT array substrate 10. The image display area 10 a is formed in a matrix on the buffer insulating film 41. A wiring 230 is electrically connected to each of the P-type semiconductor region 210p and the N-type semiconductor region 210n through a contact hole 231 provided in the gate insulating film 42 and the interlayer insulating film 43. The opening 88 is formed at a position facing the intrinsic region 210i of the frame light shielding film 53 in the peripheral portion of the image display region 10a. As viewed in a plan view, no light-shielding metal film is disposed on the portion of the TFT array substrate 10 where the opening 88 and the intrinsic region 210i overlap. N + may be added to the entire surface of the intrinsic region 210i. Thereby, the sensitivity of the first PIN diode 210 can be improved.

  A gate insulating film 42 and an interlayer insulating film 43 are stacked on the upper layer side of the PIN diode 210 and on the light incident side of the PIN diode 210 so as to cover the surface.

  Therefore, in the liquid crystal device 100, the gate electrodes 421 and 431 (see FIG. 9) formed in the switching element portion of the image display region 10a are not formed in the PIN diode 210 of the light receiving element. Since incident light reaches the intrinsic region 210i without being blocked by the gate electrodes 421 and 431, the light receiving efficiency can be dramatically improved. Thereby, the brightness of the backlight can be appropriately set according to the output of the PIN diode 210, and the brightness of the display image displayed in the image display area 10a can be appropriately set.

  Further, even if the PIN diode 210 receives light from the backlight 31 (see FIG. 4) on the side opposite to the light incident side of the PIN diode 210, the PIN diode 210 is resistant to light deterioration. The value is less likely to cause a leakage current, and there is no need to form a light shielding layer for shielding backlight light entering from the lower side of the semiconductor layer. For this reason, an extra light shielding film is not formed and overlapped with the wiring formed in the peripheral region via the insulating film. Thereby, generation | occurrence | production of a parasitic capacitance etc. can be suppressed and the detection accuracy of a light receiving element improves.

(Manufacturing method of liquid crystal device)
Next, a method for manufacturing the liquid crystal device 100 according to the present embodiment will be described with reference to FIGS.
8-10 is process sectional drawing which shows a part of process of the manufacturing method of the liquid crystal device 100 which concerns on this embodiment. The subsequent drawings are cross-sectional views taken along the line VII-VII ′ of FIG.

  First, the buffer insulating film 41 is formed on the TFT array substrate 10. An amorphous silicon layer is formed on the formed buffer insulating film 41, and the formed amorphous silicon layer is subjected to excimer laser annealing, so that a low temperature process as shown in FIG. Crystalline silicon (poly-Si) patterns 410, 420, and 430 are formed.

  Here, the poly-Si pattern 410 is a pattern to be formed in the peripheral region on the TFT array substrate 10 and to become the PIN diode 210 through the subsequent steps. Further, the poly-Si patterns 420 and 430 are formed in the image display region 10a on the TFT array substrate 10 and should be Nch TFTs and Pch TFTs, respectively. For example, the TFT 30 in the liquid crystal device 100 (see FIG. 3). Etc. Next, impurities (dopant) are added to the entire surface (dope), and the threshold value of the intrinsic region 210i is adjusted. The PIN diode 210, the Nch TFT, and the Pch TFT are not necessarily arranged on the same cross section in the liquid crystal device 100, but will be described as being arranged on the same cross section for convenience.

  Next, as shown in FIG. 8B, a resist layer is formed on the poly-Si patterns 410, 420, and 430, and the formed resist layer is patterned to form a resist pattern. 501 is formed. Subsequently, using the formed resist pattern 501 as a mask, high-concentration n-type dopants are doped to form N + high-concentration impurity regions 410n and 420n. FIG. 8B is a process cross-sectional view showing a process following the process of FIG.

  Next, as illustrated in FIG. 8C, after the resist pattern 501 is peeled off, the gate insulating film 42 is formed on the poly-Si patterns 410, 420, and 430. Subsequently, a conductive layer 502 made of a metal conductive material with poor light transmissivity, such as molybdenum, is formed on the formed gate insulating film 42. FIG. 8C is a process cross-sectional view showing a process that follows the process of FIG.

  Next, as shown in FIG. 9A, patterning is performed on the formed conductive layer 502. At this time, the gate electrode 431 is formed on the upper layer side of the poly-Si pattern 430. Subsequently, using the patterned conductive layer 502 as a mask, a high concentration p-type dopant is added to form P + high concentration impurity regions 410p and 430p. FIG. 9A is a process cross-sectional view showing a process following the process of FIG. In this manner, acceptor-type impurities are added to the P-type semiconductor regions 410p and 430p by the first dose amount, and donor-type impurities are added to the N-type semiconductor regions 410n and 420n by the second dose amount. For example, depending on the product, impurities may not be added to the intrinsic region.

  Next, as shown in FIG. 9B, the patterned conductive layer 502 is further patterned to form a gate electrode 421. At this time, a gate electrode is not formed on the PIN diode 210 as a light receiving element, but is removed by etching. For the Nch TFT, a gate electrode is formed so as to have an offset structure. Subsequently, a low concentration n-type dopant is added, and an LDD (Lightly Doped Drain) region is formed in the Nch TFT. Thereby, the PIN diode 210, the Nch TFT, and the Pch TFT are formed. FIG. 9B is a process cross-sectional view showing a process following the process of FIG. Further, in the subsequent drawings, in order to maintain consistency with FIGS. 6 and 7, the poly-Si pattern 410 is expressed as a PIN diode 210 in the drawings.

  Next, as illustrated in FIG. 9C, an interlayer insulating film 43 is formed over the gate electrodes 421 and 431. Subsequently, the formed interlayer insulating film 43 is patterned to form contact holes 43b, 43c, and 231. At this time, the gate insulating film 42 and the interlayer insulating film 43 are formed on the PIN diode 210 as the light receiving element. For this reason, since the gate electrode does not block external light entering from above, it is easy to receive light, and the light receiving efficiency of the PIN diode 210 can be further improved, which is very advantageous in practice. FIG. 9C is a process cross-sectional view showing a process that follows the process of FIG.

  Next, as illustrated in FIG. 10A, a conductive film 503 including a conductive material is formed over the patterned interlayer insulating film 43. FIG. 10A is a process cross-sectional view illustrating a process following the process of FIG.

  Next, as illustrated in FIG. 10B, a resist layer 504 is formed over the formed conductive film 503. Next, using the patterned resist layer 504 as a mask, the formed conductive film 503 is etched to form predetermined wiring patterns 230, 422, and 432. FIG. 10B is a process cross-sectional view showing a process following the process of FIG.

  Following the step of FIG. 10B, the resist layer 504 is removed, a planarization layer is formed, and an alignment film such as a pixel electrode or a common electrode is formed on the upper layer, and the TFT array substrate 10 is formed. The

  Thereby, in the manufacturing process of the liquid crystal device 100, the PIN diode 210 can be formed simultaneously with the TFT 30, which is very advantageous in practice. Further, by removing the light-shielding metal film of the PIN diode 210, it becomes possible to receive external light incident on the PIN diode 210 without shielding it, and sensor sensitivity is improved. In addition, since it is possible to add impurities to the entire surface of the intrinsic region 210i, the sensor sensitivity is improved. At this time, in the step of adding impurities to the intrinsic region 210i, it is possible to obtain the PIN diode 210 having a good sensitivity as a sensor without adding it according to the judgment of the user.

According to this embodiment, there are the following effects.
(1) A current output from a photoelectric conversion circuit 81 having a backlight 31 for supplying light to the pixel unit 9 and a first PIN diode 210 and a second PIN diode 211 is converted into a voltage, and this conversion is performed. If the detected voltage is higher than a predetermined reference voltage, a determination circuit 82 that determines that light has been detected, and a backlight control circuit that controls the amount of light supplied from the backlight 31 to the pixel unit 9 based on the determination by the determination circuit 82 95. Therefore, the amount of light supplied from the backlight 31 can be controlled according to the brightness around the liquid crystal device 100. Therefore, by increasing the difference between the brightness of the image display area 10a of the liquid crystal device 100 and the brightness of the surroundings of the liquid crystal device 100, the display visibility of the liquid crystal device 100 is improved regardless of the brightness of the surroundings of the liquid crystal device 100. It can be improved.

  (2) The photoelectric conversion circuit 81 having the first PIN type diode 210 and the second PIN type diode 211 is provided in a region excluding the region where the pixel electrode 9a is formed on the TFT array substrate 10. Therefore, the ambient light supplied to the intrinsic region 210 i of the first PIN diode 210 can be secured without reducing the aperture ratio of the pixel portion 9.

(Second Embodiment)
Next, a second embodiment will be described with reference to the drawings.
FIG. 11 is a circuit diagram showing configurations of the photoelectric conversion circuit 81A and the determination circuit 82 of the liquid crystal device 100 according to the present embodiment.

  In the present embodiment, as shown in FIG. 11, the configuration of the photoelectric conversion circuit 81A is different from that of the first embodiment. Other configurations are the same as those of the first embodiment.

  The photoelectric conversion circuit 81A includes five pairs of a first PIN type diode 210 and a second PIN type diode 211. These five pairs of first and second PIN diodes 210 and 211 are connected in series in five stages to constitute a photoelectric conversion circuit 81A.

  The output current of the photoelectric conversion circuit 81A is the sum of the currents generated by the five pairs of first and second PIN diodes 210 and 211, respectively.

  According to this embodiment, even if there is a variation in each sensor itself, no error occurs and the ambient brightness can be determined more accurately.

<Electronic equipment>
Next, an example of an electronic apparatus including the liquid crystal device 100 described above will be described with reference to FIGS.
FIG. 12 is a perspective view of a mobile personal computer 1200 to which the liquid crystal device 100 according to this embodiment is applied. In FIG. 12, a computer 1200 includes a main body 1204 provided with a keyboard 1202 and a liquid crystal display unit 1206 including the liquid crystal device 100 described above. The liquid crystal display unit 1206 is configured by adding a backlight to the back surface of the liquid crystal device 1005 having the same configuration as the liquid crystal device 100 described above.

Next, an example in which the liquid crystal device 100 described above is applied to a mobile phone 1300 will be described.
FIG. 13 is a perspective view of a mobile phone 1300 to which the liquid crystal device 100 according to this embodiment is applied. In FIG. 13, a mobile phone 1300 includes a liquid crystal device 1005 that adopts a transflective display format and has the same configuration as the liquid crystal device 100 described above, together with a plurality of operation buttons 1302.

  Since these electronic apparatuses also include the same configuration as the liquid crystal device 100 described above, the various effects described above can be suitably enjoyed.

  In addition to the electronic devices described with reference to FIGS. 12 and 13, a liquid crystal television, a viewfinder type or a monitor direct-view type video tape recorder, a car navigation device, a pager, an electronic notebook, a calculator, a word processor, a workstation And a direct-view display device including a video phone, a POS terminal, and a touch panel, and a projection display device such as a liquid crystal projector. And it cannot be overemphasized that the liquid crystal device mentioned above is applicable as a display part of these various electronic devices.

  As mentioned above, although embodiment was described referring an accompanying drawing, it cannot be overemphasized that this embodiment is not limited to the example which concerns. The liquid crystal device 100 is configured to perform a transmissive display using light from the backlight 31, but is not limited to this, and the above-described transmissive display and a reflective display using incident ambient light. , And may be configured to perform transflective display.

  In addition, the first PIN type diode 210 is connected to the photoelectric conversion circuit 81A in five stages in series. However, the present invention is not limited to this. For example, the first PIN type diode 210 is connected in series to ten stages. Also good.

  Further, the determination circuit 82 is provided in the liquid crystal panel AA. However, the determination circuit 82 is not limited thereto.

  In addition, the present invention is applied to the liquid crystal device 100 using liquid crystal as an electro-optical material, but is not limited thereto, and can be applied to an electro-optical device using an electro-optical material other than liquid crystal. For example, an organic EL display (OLED) panel using an organic LED element, an electrophoretic display panel using a microcapsule containing a colored liquid and white particles dispersed in the liquid as an electro-optical material, and a polarity difference Twisted ball display panel using twist balls painted in different colors for each area to be used as electro-optic material, toner display panel using black toner as electro-optic material, or electro-optic with high pressure gas such as helium or neon The present embodiment can be similarly applied to various electro-optical devices such as a plasma display panel used as a substance.

  As the liquid crystal, a TN (Twisted Nematic) liquid crystal or a liquid crystal using a negative dielectric constant may be used. The liquid crystal display mode may be IPS (In-Plane Switching), FFS (Fringe-Field Switching), or the like.

The top view which looked at the liquid crystal device concerning a 1st embodiment from the counter substrate side with each component which formed the TFT array substrate on it. II-II 'sectional view taken on the line of FIG. 3 is an equivalent circuit of various elements and wirings in the pixel unit according to the first embodiment. 1 is a block diagram illustrating a configuration of a liquid crystal device according to a first embodiment. FIG. 3 is a circuit diagram illustrating a configuration of a photoelectric conversion circuit and a determination circuit of the liquid crystal device according to the first embodiment. The top view of the PIN type diode which concerns on 1st Embodiment. (A) is the VII-VII 'sectional view taken on the line of FIG. 6, (B) is the VIII-VIII' sectional view taken on the line of FIG. FIG. 6 is a process cross-sectional view illustrating a part of the process of the method for manufacturing the liquid crystal device according to the first embodiment. FIG. 9 is a process cross-sectional view illustrating a process that follows the process of FIG. 8. FIG. 10 is a process cross-sectional view illustrating a process that follows the process of FIG. 9. The circuit diagram which shows the structure of the photoelectric conversion circuit and determination circuit of the liquid crystal device which concern on 2nd Embodiment. 1 is a perspective view of a mobile personal computer to which a liquid crystal device according to an embodiment is applied. 1 is a perspective view of a mobile phone to which a liquid crystal device according to an embodiment is applied.

Explanation of symbols

  6a ... Data line 7 ... Sampling circuit 9 ... Pixel part 9a ... Pixel electrode 10 ... TFT array substrate (first substrate) 10a ... Image display area 11a ... Scanning line 16 ... Alignment film 20 ... Counter substrate (second substrate) 21 ... Counter electrode 22 ... Alignment film 23 ... Light shielding layer 30 ... TFT 31 ... Backlight 32 ... Mounting component 41 ... Buffer insulation film 42 ... Gate insulation film 43 ... Interlayer insulation film 43b, 43c ... Contact hole 50 ... Liquid crystal layer 52 ... Sealing material 52a ... Sealing region 53 ... Frame light shielding film (light shielding film) 70 ... Storage capacitor 81, 81A ... Photoelectric conversion circuit 82 ... Determination circuit 85, 86, 87 ... Wiring 88 ... Opening 89 ... Black matrix 90 ... Routing wiring 91 ... External drive circuit 92 ... Power supply circuit 93 ... Image processing circuit 94 ... Timing generation circuit 95 ... Backlight Control circuit 99 ... Reset unit 100 ... Liquid crystal device (electro-optical device) 101 ... Data line driving circuit 102 ... External circuit connection terminal 104 ... Scan line driving circuit 106 ... Vertical conduction terminal 107 ... Vertical conduction material 210 ... First PIN type Diode (PIN type diode) (light receiving element) (first light receiving element) 210p ... P type semiconductor region 210i ... Intrinsic region 210n ... N type semiconductor region 211 ... Second PIN type diode (second light receiving element) 230 ... Wiring (Wiring pattern) 231 ... Contact hole 300 ... Capacitance line 410, 420, 430 ... Low-temperature process polycrystalline silicon pattern (poly-Si pattern) 410n, 420n ... N + high concentration impurity region (N-type semiconductor region) 410p, 430p ... P + High concentration impurity region (P-type semiconductor region) 4 DESCRIPTION OF SYMBOLS 1 ... Gate electrode 422 ... Wiring pattern 431 ... Gate electrode 432 ... Wiring pattern 501 ... Resist pattern 502 ... Conductive layer 503 ... Conductive film 504 ... Resist layer 821 ... Current-voltage conversion circuit 822 ... Photodetection circuit 1005 ... Liquid crystal device 1200 ... Computer 1202 ... Keyboard 1204 ... Main body 1206 ... Liquid crystal display unit 1300 ... Mobile phone 1302 ... Operation buttons.

Claims (8)

A pair of substrates composed of first and second substrates;
A pixel region formed on the first substrate;
A light receiving element formed around the pixel region;
A light-shielding film formed at a position facing the periphery of the pixel region on the second substrate;
A P-type semiconductor region, an intrinsic region and an N-type semiconductor region formed in the light receiving element;
An opening formed at a position facing the intrinsic region of the light shielding film;
Have
The electro-optical device is characterized in that a light-shielding metal film is not disposed in a portion where the opening and the intrinsic region overlap on the first substrate as viewed in a plan view. The electro-optical device according to claim 1.
The electro-optical device, wherein the opening has an opening having an area larger than an area of the intrinsic region. The electro-optical device according to claim 1.
An electro-optical device, wherein n + is added to the entire surface of the intrinsic region. The electro-optical device according to any one of claims 1 to 3,
The light receiving element comprises at least a pair of a first light receiving element irradiated with external light and a second light receiving element not irradiated with external light,
An electro-optical device that determines a received light amount based on a difference output signal obtained by subtracting a second sensing signal generated from the second light receiving element from a first sensing signal generated from the first light receiving element. The electro-optical device according to claim 4.
An electro-optical device, wherein an opening is not formed in the light shielding film at a position facing the intrinsic region of the second light receiving element. The electro-optical device according to claim 4.
The signal obtained from the output side of the first light receiving element and the input side of the second light receiving element is electrically connected to the output side of the first light receiving element and the input side of the second light receiving element. Is an output signal. The electro-optical device according to claim 4.
A light source for supplying light to the pixel region;
A control circuit that controls the amount of light supplied from the light source to the pixel region when the output signal exceeds a predetermined threshold;
An electro-optical device comprising: An electro-optical device comprising: a pixel region having a switching element; and a light receiving element formed in a peripheral portion of the pixel region, wherein a light shielding metal film is not formed in a portion overlapping the intrinsic region of the light receiving element in plan view A manufacturing method comprising:
Leaving a light-shielding metal film partially on the semiconductor layer of the light receiving element when forming the gate electrode of the switching element;
Adding an impurity to the N-type semiconductor region or the P-type semiconductor region using the light-shielding metal film as a mask;
Removing the light shielding metal film on the light receiving element; and
Forming an insulating film on the light receiving element;
A method for manufacturing an electro-optical device.

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