JP2010098105A - Method of manufacturing epitaxial substrate for solid-state imaging element, and epitaxial substrate for solid-state imaging element - Google Patents

Abstract

Provided is a method for manufacturing an epitaxial substrate for a solid-state imaging device, in which a gettering sink can be easily formed in a short time and there is no fear of heavy metal contamination when the gettering sink is formed.
A semiconductor wafer on which an epitaxial layer is formed is set in a laser irradiation apparatus, and a laser beam is irradiated while the semiconductor wafer is moved. At this time, the laser beam emitted from the laser generator is condensed by a condensing lens (condensing means) so that a condensing point (focal point) is at a depth of about several tens of μm from one surface of the semiconductor wafer. . Thereby, the crystal structure of the semiconductor wafer is modified, and a gettering sink is formed.
[Selection] Figure 3

Description

  The present invention relates to a method for manufacturing a silicon substrate for a solid-state image sensor and an epitaxial substrate for a solid-state image sensor, and more particularly to a technique capable of easily forming a gettering site on a silicon substrate for a solid-state image sensor in a short time.

  In recent years, high-performance solid-state imaging devices using semiconductors are mounted on cellular phones, digital video cameras, and the like, and the performance such as the number of pixels and sensitivity has been dramatically improved. Such a solid-state imaging device is manufactured, for example, by using an epitaxial substrate obtained by growing an epitaxial layer on one surface of a semiconductor substrate and forming a circuit made of a photodiode or the like on the epitaxial layer.

  As a factor for deteriorating the imaging characteristics of the solid-state imaging device, the dark leakage current of the photodiode is a problem. The cause of dark leakage current is considered to be heavy metal contamination of the substrate (wafer) in the manufacturing process. In order to suppress such heavy metal contamination of the substrate, conventionally, a heavy metal gettering sink is formed inside or on the back surface of the semiconductor wafer, and the heavy metal is collected in the gettering sink, thereby reducing the heavy metal concentration in the photodiode forming portion. Reducing has been done.

As a method for forming such a gettering sink, for example, there is a method in which a heat treatment is performed on a semiconductor substrate to form an oxygen precipitation portion inside the substrate, and this oxygen precipitation portion is used as a gettering sink (for example, a non-gettering sink). Patent Document 1). Further, for example, there is a method in which an amorphous film is formed on the back side of the substrate and the back side of the substrate is used as a gettering sink (for example, Patent Document 2).
JP-A-6-338507 M. Sano, S. Sumita, T. Shigematsu and N. Fujino, Semiconductor Silicon 1994.eds.HRHuff et al. (Electrochem. Soc., Pennington 1994)

  However, in the method of forming an oxygen precipitation part in the substrate by performing a heat treatment on the semiconductor substrate, a long heat treatment is required to form an oxygen precipitation part of a size that can sufficiently capture heavy metals, and the manufacturing process However, there is a problem that the manufacturing cost increases due to a long period of time. In addition, there is a concern that further heavy metal contamination may occur from the heating device or the like in the heat treatment process.

  On the other hand, the method of forming an amorphous film on the back side of the substrate is that, in the case of a large-diameter substrate such as a 300 mm wafer, which is becoming the mainstream in recent years, since both sides are polished, an amorphous film serving as a gettering sink is formed on the back side. It is difficult to do itself.

  The present invention has been made to solve the above-described problem, and a method for manufacturing an epitaxial substrate for a solid-state imaging device, in which a gettering sink can be easily formed in a short time and there is no fear of heavy metal contamination when the gettering sink is formed. I will provide a.

  In addition, an epitaxial substrate for a solid-state imaging device that can be manufactured at low cost with little heavy metal contamination is provided.

In order to solve the above problems, the present invention provides the following method for manufacturing an epitaxial substrate for a solid-state imaging device.
That is, the method for manufacturing an epitaxial substrate for a solid-state imaging device according to the present invention includes a step of growing an epitaxial layer on one surface of a semiconductor substrate to form the epitaxial substrate, and a laser beam toward the epitaxial substrate via a condensing means. Incident light and focusing the laser beam on an arbitrary minute region of the semiconductor substrate causes a multiphoton absorption process in the minute region and forms a gettering sink in which the crystal structure of the minute region is changed. And a step of annealing the epitaxial substrate at a predetermined temperature and capturing the heavy metal in the gettering sink.

It is preferable that the laser beam is in a wavelength region that can be transmitted through the epitaxial substrate, and the condensing unit condenses the laser beam at an arbitrary position in the thickness direction of the semiconductor substrate.
The laser beam is preferably an ultrashort pulse laser beam having a pulse width of 1.0 × 10 ^{−15 to} 1.0 × 10 ⁻⁸ seconds and a wavelength of 300 to 1200 nm.

The semiconductor substrate is preferably made of single crystal silicon, and the gettering sink preferably includes amorphous silicon.
It is preferable that the gettering sink is formed at a position overlapping the formation area of the solid-state imaging device.

  The epitaxial substrate for a solid-state imaging device according to the present invention is an epitaxial substrate for a solid-state imaging device manufactured by the method for manufacturing an epitaxial substrate for a solid-state imaging device, and the gettering sink forms at least the solid-state imaging device. It is characterized in that it is provided in a region overlapping with the formation position of the embedded type photodiode with a diameter of 50 to 150 μm and a thickness of 10 to 150 μm.

The gettering sink is preferably formed with a density of 1.0 × 10 ^{5 to} 1.0 × 10 ⁷ pieces / cm ² .

  According to the method for manufacturing an epitaxial substrate for a solid-state imaging device of the present invention, a laser beam is incident on the epitaxial substrate via a condensing unit, and the laser beam is focused on an arbitrary minute region inside the semiconductor substrate. As a result, a multiphoton absorption process is generated in a minute region inside the semiconductor substrate, and a gettering sink in which only the crystal structure of the minute region is changed can be formed easily and in a short time.

  This eliminates the need for a long-time heat treatment to form a gettering sink as in the prior art, simplifies the manufacturing process of the solid-state imaging device epitaxial substrate, and reduces the manufacturing cost. Further, even with a double-sided polishing substrate typified by a 300 mm wafer, a gettering sink can be easily formed inside the semiconductor substrate.

  In addition, according to the epitaxial substrate for a solid-state imaging device of the present invention, the solid-state imaging device capable of realizing a solid-state imaging device having excellent imaging characteristics with excellent heavy metal gettering capability and low leakage current during darkness. An epitaxial substrate can be provided.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, an embodiment of an epitaxial substrate for a solid-state imaging device and a manufacturing method thereof according to the invention will be described with reference to the drawings. In addition, this embodiment is specifically described in order to make the gist of the invention better understood, and does not limit the present invention unless otherwise specified. In addition, in the drawings used in the following description, in order to make the features of the present invention easier to understand, there is a case where a main part is shown in an enlarged manner for convenience, and the dimensional ratio of each component is the same as the actual one. Not necessarily.

  FIG. 1 is an enlarged cross-sectional view showing an epitaxial substrate for a solid-state imaging device of the present invention. An epitaxial substrate (epitaxial substrate for solid-state imaging device) 1 includes a semiconductor substrate 2 and an epitaxial layer 3 formed on one surface 2 a of the semiconductor substrate 2. In the vicinity of one surface 2a of the semiconductor substrate 2, gettering sinks 4, 4,... For capturing heavy metals of the epitaxial substrate 1 are formed.

  Such an epitaxial substrate 1 can be suitably used as a substrate for a solid-state imaging device. The semiconductor substrate 2 may be a silicon single crystal wafer, for example. The epitaxial layer 3 may be a silicon epitaxial growth film grown from the one surface 2 a of the semiconductor substrate 2.

  The gettering sink 4 may have a structure in which a part of a silicon single crystal is made amorphous (amorphous-like). The gettering sink 4 has a capability of capturing heavy metals only by a slight strain in its crystal structure, and can serve as a gettering sink by making only a small part amorphous. The gettering sink 4 is formed by modifying the crystal structure by causing a multiphoton absorption process in a part of the semiconductor substrate 2 by condensing the laser beam. A method for forming such a gettering sink 4 will be described later in detail in a method for manufacturing an epitaxial substrate for a solid-state imaging device.

  The gettering sink 4 only needs to be formed at a position that overlaps at least the formation region S of each solid-state image sensor when the solid-state image sensor is formed using the epitaxial substrate 1. For example, one gettering sink 4 may be formed in a disk shape having a diameter R of 50 to 150 μm and a thickness T of 10 to 150 μm. The formation depth D of the gettering sink 4 is preferably about 0.5 to 2 μm from the one surface 2 a of the semiconductor substrate 2.

FIG. 2 is a cross-sectional view showing an example of a solid-state imaging device created using the epitaxial substrate for a solid-state imaging device of the present invention. The solid-state imaging device 60 uses an epitaxial substrate 1 in which a p-type epitaxial layer 3 is formed on a p ⁺ -type semiconductor substrate (silicon substrate) 2 and a gettering sink 4 is formed on the semiconductor substrate 2. A first n-type well region 61 is formed at a predetermined position of the epitaxial layer 2. Inside the first n-type well region 61, a p-type transfer channel region 63, an n-type channel stop region 64, and a second n-type well region 65 constituting a vertical transfer register are formed.

  Further, a transfer electrode 66 is formed at a predetermined position of the gate insulating film 62. Further, a photodiode 69 in which an n-type positive charge storage region 67 and a p-type impurity diffusion region 68 are stacked is formed between the p-type transfer channel region 63 and the second n-type well region 65. The Then, an interlayer insulating film 71 that covers them and a light shielding film 72 that covers the surface except for the portion directly above the photodiode 69 are provided.

  The solid-state imaging device 60 having such a configuration degrades the imaging characteristics of the solid-state imaging device 60 because the heavy metal contained in the epitaxial substrate 1 is reliably captured by the gettering sink 4 formed on the semiconductor substrate 2. The dark leakage current of the photodiode 69 that is a factor can be suppressed. Therefore, by forming the solid-state image sensor 60 using the epitaxial substrate 1 of the present invention, it is possible to realize the solid-state image sensor 60 having excellent imaging characteristics with little dark leakage current.

  Next, the manufacturing method of the epitaxial substrate for solid-state image sensors of this invention is demonstrated. FIG. 3 is a cross-sectional view showing an outline of a method for manufacturing an epitaxial substrate for a solid-state imaging device. In manufacturing an epitaxial substrate (epitaxial substrate for a solid-state imaging device), first, a semiconductor wafer 2 is prepared (see FIG. 3A). The semiconductor wafer 2 may be, for example, a silicon single crystal wafer manufactured by slicing a silicon single crystal ingot.

  Next, an epitaxial layer 3 is formed on one surface 2a of the semiconductor wafer 2 (see FIG. 3B). In forming the epitaxial layer 3, for example, an epitaxial growth apparatus may be used to introduce the source gas while heating the semiconductor wafer 2 to a predetermined temperature, and to grow the epitaxial layer 3 made of a silicon single crystal on the one surface 2a.

  Next, the semiconductor wafer 2 on which the epitaxial layer 3 is formed is set in the laser irradiation apparatus 20, and a laser beam is irradiated while moving the semiconductor wafer 2 (see FIG. 3C). At this time, the laser beam emitted from the laser generator 15 is focused by the condensing lens (condensing means) 11 so that the condensing point (focal point) is deeper than the one surface 2 a of the semiconductor wafer 2 by several tens of μm. Focused. Thereby, the crystal structure of the semiconductor wafer 2 is modified, and the gettering sink 4 is formed. The formation process of the gettering sink 4 will be described in detail later.

  The semiconductor wafer 2 on which the epitaxial layer and the gettering sink 4 are formed is further heated to a predetermined temperature by the annealing device 80 (see FIG. 3D). As a result, the heavy metal diffused in the semiconductor wafer 2 is collected in the gettering sink 4, and the solid-state imaging element epitaxial substrate 1 with very little heavy metal in the element formation portion is obtained.

  FIG. 4 is a schematic diagram showing an example of a laser irradiation apparatus for forming a gettering sink on a semiconductor wafer. The laser irradiation device 20 includes a laser generator 15 that oscillates the laser beam Q1, a pulse control circuit (Q switch) 16 that controls the pulse of the laser beam Q1, etc., and reflects the laser beam Q1 to change the traveling direction of the laser beam Q1. A beam splitter (half mirror) 17a that converts 90 ° toward the semiconductor wafer 2 and a condensing lens (condensing means) 11 that condenses the laser beam Q1 reflected by the beam splitter 17a are provided.

  Further, a stage 40 on which the semiconductor wafer 2 on which the epitaxial layer 3 is formed is placed. The stage 40 is controlled by a stage control circuit 45 so as to be movable in the vertical direction Y and the horizontal direction X in order to focus the focused laser beam Q2 at an arbitrary position on the semiconductor wafer 2. The

  The laser generator 15 and the pulse control circuit 16 are not particularly limited as long as they can irradiate a laser beam capable of forming a gettering sink by modifying a crystal structure at an arbitrary position inside the semiconductor wafer and transmitting the semiconductor wafer. A titanium sapphire laser that can oscillate in a possible wavelength range and with a short pulse period is suitable. Table 1 shows specific examples of suitable laser irradiation conditions for each of a general semiconductor wafer and a silicon wafer.

  The laser beam Q1 generated by the laser generator 15 is converged on the optical path width by the condensing lens 11, and the converged laser beam Q2 forms an image of a focal point at an arbitrary depth position G of the semiconductor wafer 20 ( The stage 40 is controlled in the vertical direction Y so that the light is condensed. The condensing lens 11 has a magnification of 10 to 300 times, for example. It is preferable that A is 0.3 to 0.9 and the transmittance with respect to the wavelength of the laser beam is 30 to 60%.

  The laser irradiation device 20 further includes a visible light laser generator 19, a beam splitter (half mirror) 17b, a CCD camera 30, a CCD camera control circuit 35, an imaging lens 12, a central control circuit 50, and a display means 51. ing.

  The visible light laser beam Q3 generated by the visible light laser generator 19 is reflected by the beam splitter (half mirror) 17b, changes its direction by 90 °, and reaches the epitaxial layer 3 of the semiconductor wafer 2. Then, the light is reflected by the surface of the epitaxial layer 3, passes through the condensing lens 11 and the beam splitters 17 a and 17 b, and reaches the imaging lens 12. The visible light laser Q 3 that has reached the imaging lens 12 is picked up by the CCD camera 30 as a surface image of the semiconductor wafer 2, and the picked-up data is input to the CCD camera control circuit 35. Based on the input imaging data, the stage control circuit 45 controls the amount of movement of the stage 40 in the horizontal direction X.

  Next, a method for forming a gettering sink on the semiconductor wafer 2 on which the epitaxial layer 3 is formed will be described in detail. FIG. 5 is a schematic diagram showing how a gettering sink is formed on a semiconductor wafer by a laser beam. When forming a gettering sink on the semiconductor wafer 2, the laser beam Q <b> 1 emitted from the laser generator 15 is converged by a condensing lens (condensing means) 11. Since the converged laser beam Q2 is in a wavelength range that can be transmitted through silicon, the laser beam Q2 reaches the surface of the epitaxial layer 3 and then enters without being reflected.

  On the other hand, the semiconductor wafer 2 on which the epitaxial layer 3 is formed is positioned such that the condensing point (focal point) of the laser beam Q2 is a predetermined depth D from the one surface 2a of the semiconductor wafer 2. Thereby, the multi-photon absorption process occurs in the semiconductor wafer 2 only at the condensing point (focal point) of the laser beam Q2.

  As is well known, the multiphoton absorption process irradiates a specific part (irradiation region) with a large amount of photons in a very short time, so that a large amount of energy is selectively absorbed only in the irradiation region. It causes a reaction such as a change in the crystal bond in the region. In the present invention, by condensing a laser beam on an arbitrary region inside the semiconductor wafer 2, the semiconductor wafer having a single crystal structure is modified at this condensing point (focal point) and partially amorphous like. A crystal structure is produced. Such modification of the crystal structure may be performed to such an extent that a capturing action of heavy metals is generated, that is, a slight distortion is generated in the crystal structure.

  As described above, by setting the condensing point (focal point) of the laser beam Q2 obtained by converging the laser beam Q1 in an arbitrary minute region inside the semiconductor wafer 2, and modifying the crystal structure of the minute region, The gettering sink 4 can be formed in an arbitrary minute region of the semiconductor wafer 2.

  The laser beam for forming the gettering sink 4 is a laser beam without modifying the crystal structure of the epitaxial layer 3 or the semiconductor wafer 2 in the optical path before the laser beam reaches the focal point (focal point). It is important to ensure that the beam can be transmitted reliably. Such laser beam irradiation conditions are determined by a forbidden band (energy band gap) which is a basic physical property value of a semiconductor material. For example, since the forbidden band of a silicon semiconductor is 1.1 eV, the transmittance becomes remarkable when the incident wavelength is 1000 nm or more. In this way, the wavelength of the laser beam can be determined in consideration of the forbidden band of the semiconductor material.

  As a laser beam generator, it is preferable to use a low-power laser because a high-power laser such as a YAG laser may transfer thermal energy not only to a predetermined depth position but also to the surrounding area. . As the low power laser, for example, an ultrashort pulse laser such as a femtosecond laser is suitable.

This ultrashort pulse laser can set the wavelength of the laser beam in an arbitrary range by exciting a titanium sapphire crystal (solid laser crystal) using a semiconductor laser or the like. Since the ultrashort pulse laser can reduce the pulse width of the excitation laser beam to 1.0 × 10 ⁻¹⁵ femtosecond or less, it can suppress the diffusion of thermal energy generated by excitation as compared with other lasers. The light energy can be concentrated only at the condensing point (focal point).

  It is presumed that the gettering sink 4 formed by modifying the crystal structure by the multiphoton absorption process probably has an amorphous-like crystal structure. In order to obtain such an amorphous-like crystal structure, it is necessary for the laser beam to rapidly heat and cool the condensing point (focal point) G locally. The ultrashort pulse laser having the characteristics shown in Table 1 is a laser having a small amount of energy. However, by focusing using the condensing lens 11, the semiconductor substrate 20 is rapidly heated locally. Enough energy. The temperature of the focal point G of the laser beam reaches a high temperature of 9900 to 10000K. In addition, since the heat input range is very narrow because the light is condensed, if the light condensing point (focal point) is moved by the movement of the stage on which the semiconductor wafer 2 is mounted or the scanning of the laser beam, the light condensing point before the movement ( The amount of heat input at the focal point decreases rapidly, and a rapid cooling effect is obtained.

  Moreover, like the ultrashort pulse laser shown in Table 1, by setting the wavelength to 1000 nm, the transparency to the epitaxial layer 3 and the semiconductor wafer 2 can be enhanced without affecting the crystal structure of the epitaxial layer 3 and the like. Only the minute region that is the focal point (focal point) of the laser beam can be modified. This modified portion of the crystal structure can be suitably used as the gettering sink 4 of the semiconductor substrate 2. When the wavelength of the laser beam exceeds 1200 nm, the photon energy (laser beam energy) becomes low because of the long wavelength region. For this reason, even if the laser beam is condensed, there is a possibility that sufficient photon energy for modifying the inside of the semiconductor substrate cannot be obtained, and the wavelength of the laser beam is preferably set to 1200 nm or less.

  The position of the condensing point (focal point) G of the laser beam, that is, the position where the gettering sink 4 is formed on the semiconductor substrate 2 can be controlled by moving the stage up and down. Besides the vertical movement of the stage, the position of the condensing point (focal point) G of the laser beam can also be controlled by controlling the position of the condensing means (condensing lens).

  As an example, when the gettering sink 4 is formed by modifying the position of 2 μm from the surface of the semiconductor substrate, the wavelength of the laser beam is set to 1080 nm and the condensing lens with a transmittance of 60% (magnification 50) The modified portion (gettering sink) can be formed by forming (condensing) a laser beam at a position 2 μm from the surface using a (multiplier) and generating a multiphoton absorption process.

  As described above, the gettering sink 4 obtained by modifying the crystal structure of the micro region of the semiconductor substrate 2 is formed in a disk shape having a diameter R of 50 to 150 μm and a thickness T of 10 to 150 μm, for example. Just do it. The formation depth D of the gettering sink 4 is preferably about 0.5 to 2 μm from the one surface 2 a of the semiconductor substrate 2.

  Each gettering sink 4 should just be formed in the epitaxial substrate 1 in the position which overlaps with the formation area S of a solid-state image sensor. For example, the gettering sinks 4 may be formed at intervals of a formation pitch P of 0.1 to 10 μm. In addition to the intermittent formation of the gettering sink 4 as described above, for example, the gettering sink 4 may be uniformly formed on the entire semiconductor substrate at a predetermined depth with respect to the semiconductor substrate.

  FIG. 6 is a schematic view showing a state of forming a gettering sink in the epitaxial substrate. The gettering sink 4 may be formed below the solid-state imaging device formation region on the epitaxial substrate 1. For example, the epitaxial substrate 1 is scanned along the X direction while being shifted in the Y direction at the peripheral edge so that the laser beam Q is scanned over the entire area of the epitaxial substrate 1, and the laser beam Q is irradiated under a predetermined condition. If so, the gettering sinks 4, 4... Can be formed on the entire epitaxial substrate 1.

The formation density of the gettering sink 4 in the entire epitaxial substrate 1 can be set by the scanning pitch B of the laser beam Q. The formation density of the gettering sink 4 is preferably in the range of 1.0 × 10 ^{5 to} 1.0 × 10 ⁷ pieces / cm ² , for example. The formation density of the gettering sink 4 can be verified by the number of oxygen precipitates obtained by observation with a cross-sectional TEM (transmission electron microscope).

  As described above, according to the method for manufacturing an epitaxial substrate for a solid-state imaging device of the present invention, a laser beam is incident on the epitaxial substrate through the light condensing means, and the laser beam is incident on an arbitrary minute region inside the semiconductor substrate. By collecting the light, a multiphoton absorption process occurs in a minute region inside the semiconductor substrate, and a gettering sink in which only the crystal structure of the minute region is changed can be formed easily and in a short time. become.

  This eliminates the need for a long-time heat treatment to form a gettering sink as in the prior art, simplifies the manufacturing process of the solid-state imaging device epitaxial substrate, and reduces the manufacturing cost. Further, even with a double-sided polishing substrate typified by a 300 mm wafer, a gettering sink can be easily formed inside the semiconductor substrate.

As an example of the present invention, a silicon wafer having a substrate diameter of 300 mm and a thickness of 0.725 mm is irradiated with a laser beam having the conditions shown in Table 2, and the density is set at a depth of 2 μm from the surface of the silicon wafer. A silicon wafer on which a modified portion (gettering sink) of 10 ⁻⁶ / cm ² was formed was produced.

In order to confirm the gettering effect of the modified portion in the above-described embodiment, the same silicon wafer as that in the above-described embodiment was prepared as a conventional comparative example 1 except that the laser beam was not irradiated.
Moreover, in order to compare with the gettering effect of the silicon wafer in which the oxygen precipitation part was formed by the heat treatment for a long time, the same as Comparative Example 1 described above except that the heat treatment was performed for 10 hours and 20 hours as the conventional Comparative Example 2. A silicon wafer was prepared.

And the gettering effect was evaluated by the method shown next about each sample of above-mentioned Example, the comparative example 1, and the comparative example 2. FIG.
First, each sample was washed with a mixed solution of ammonia water and hydrogen peroxide solution and a mixed solution of hydrochloric acid and hydrogen peroxide solution, and then by a spin coat contamination method, 1.0 × 10 ¹² atoms / The surface was contaminated by about cm ² . Next, diffusion heat treatment was performed in a nitrogen atmosphere at 1000 ° C. for 1 hour in a vertical heat treatment furnace, and then Wright solution (48% HF: 30 ml, 69% HNO ₃ : 30 ml, CrO ₃ 1 g + H ₂ O 2 ml, acetic acid: 60 ml) was used to etch the surface of each sample. Then, the number of etch pits on the surface (pits formed by etching nickel silicide) is observed with an optical microscope, and the etch pit density (pieces / cm ² ) is measured to evaluate the gettering ability of each sample. did.

The measurement limit of the etch pit density in this method is 1.0 × 10 ³ pieces / cm ² . Evaluation of the gettering ability is good when the etch pit density is 1.0 × 10 ³ pieces / cm ² or less (below the measurement limit), exceeding 1.0 × 10 ³ pieces / cm ² and 1.0 × 10 ⁵ pieces / cm ^2. Less than cm ² was allowed, and 1.0 × 10 ⁵ pieces / cm ² or more was made impossible.

Further, with respect to Comparative Example 2, the time required for forming an oxygen precipitation portion serving as a gettering sink was evaluated as follows.
Each sample was cleaved in the (110) direction, etched with the Wright solution, and then evaluated by observing the density (pieces / cm ² ) of oxygen precipitates by observing the cleavage plane (sample cross section) with an optical microscope. Evaluation of the gettering ability was carried out by evaluating gettering ability due to surface contamination with nickel element as in Example 1 described above.

As a result of verification, in Comparative Example 1, the etch pit density was 1.0 × 10 ⁵ pieces / cm ² , and no gettering effect was observed.
In Comparative Example 2, in the sample subjected to the heat treatment for 10 hours, the density of oxygen precipitates was 1.0 × 10 ⁴ pieces / cm ² and the etch pit density was 1.0 × 10 ⁵ pieces / cm ^2, which was almost getter. The ring effect was not recognized. Further, even in the sample subjected to the heat treatment for 20 hours, the density of oxygen precipitates is 1.0 × 10 ⁵ pieces / cm ² , and the etch pit density is 1.0 × 10 ⁴ pieces / cm ^{2, which} is a little gettering effect. Was only recognized.

On the other hand, in the examples of the present invention, a sufficient gettering effect was observed with an etch pit density of 1.0 × 10 ³ pieces / cm ² or less.
From the above results, an excellent gettering sink can be obtained by modifying the crystal structure by irradiating a laser beam for a short time and generating a multiphoton absorption process only at a predetermined depth position of the semiconductor substrate as in the present invention. It was confirmed that a capable gettering sink can be easily formed at an arbitrary position.

It is sectional drawing which showed the polishing method of the silicon wafer of this invention in steps. It is the top view which shows an example of a silicon wafer, and sectional drawing. It is explanatory drawing which shows an example of the measurement point of the silicon wafer in a measurement process. It is sectional drawing which showed the change of the thickness of the silicon wafer in a grinding | polishing process. It is a conceptual diagram which shows an example of the measuring apparatus of a silicon wafer. It is explanatory drawing which shows the Example of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Epitaxial substrate for solid-state image sensors, 2 Semiconductor substrate, 3 Epitaxial layer, 4 Gettering sink.

Claims (7)

Growing an epitaxial layer on one surface of a semiconductor substrate to form an epitaxial substrate;
A laser beam is incident on the epitaxial substrate through a condensing unit, and the laser beam is condensed on an arbitrary minute region of the semiconductor substrate, thereby causing a multiphoton absorption process in the minute region, Forming a gettering sink in which the crystal structure of the micro region is changed;
Annealing the epitaxial substrate at a predetermined temperature and capturing heavy metal in the gettering sink;
A method for manufacturing an epitaxial substrate for a solid-state imaging device, comprising:   The laser beam is in a wavelength region that can be transmitted through the epitaxial substrate, and the condensing unit condenses the laser beam at an arbitrary position in the thickness direction of the semiconductor substrate. The manufacturing method of the epitaxial substrate for solid-state image sensors of description. 3. The laser beam according to claim 1, wherein the laser beam is an ultrashort pulse laser beam having a pulse width of 1.0 × 10 ^{−15 to} 1.0 × 10 ⁻⁸ seconds and a wavelength of 300 to 1200 nm. Manufacturing method of epitaxial substrate for solid-state image sensor.   4. The method of manufacturing an epitaxial substrate for a solid-state imaging device according to claim 1, wherein the semiconductor substrate is made of single crystal silicon, and the gettering sink includes silicon having an amorphous structure.   5. The method for manufacturing an epitaxial substrate for a solid-state imaging device according to claim 1, wherein the gettering sink is formed at a position overlapping a formation region of the solid-state imaging device. An epitaxial substrate for a solid-state imaging device manufactured by the method for manufacturing an epitaxial substrate for a solid-state imaging device according to any one of claims 1 to 5,
The gettering sink is provided in a region having a diameter of 50 to 150 μm and a thickness of 10 to 150 μm at least in a region overlapping with a formation position of an embedded photodiode constituting the solid-state imaging device. Epitaxial substrate for device. The epitaxial substrate for a solid-state imaging device according to claim 6, wherein the gettering sink is formed in a density range of 1.0 × 10 ^{5 to} 1.0 × 10 ⁷ pieces / cm ² .

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