JP2010092923A - Spontaneous emission display - Google Patents

Abstract

A self-luminous display device having excellent heat dissipation and small deterioration of a light-emitting element due to heat is provided.
A light-emitting element in which a first electrode, a first organic light-emitting layer having a first light-emitting layer, and a second electrode are formed in this order on a thin film transistor formed on the substrate is formed on the substrate. A self-luminous display device that constitutes a display region by two-dimensionally disposing it on a thin film transistor on the first electrode, wherein the first electrode is formed as a continuous film inside the display region, and outside the display region It is connected to a heat dissipation wire.
[Selection] Figure 1

Description

  The present invention relates to a self-luminous display device, and more particularly to a self-luminous display device suitably used for an organic EL (Electro Luminescence) display device.

  The light emitting element cannot convert all applied energy into light, and heat is also generated from a part of the applied energy. The temperature of the display device rises due to heat generated by causing the light emitting element to emit light, and the current-luminance characteristics of the light emitting element deteriorate. In addition, the thermal drift of the thin film transistor disposed on the substrate due to the temperature rise of the substrate also becomes a problem, leading to display unevenness.

In the electro-optical device including the light emitting element disclosed in Patent Document 1, a heat radiating portion is provided between the light emitting element and the substrate on the side opposite to the light extraction direction of the light emitting element. The heat dissipating part is configured to straddle the light emitting area and the non-light emitting area, and heat is stored in the entire heat dissipating part formed on the substrate to equalize the temperature distribution. However, the heat dissipating part is laminated with the light emitting element through the insulating film, and has a configuration in which it is difficult to quickly receive the heat generated in the light emitting element. In addition, the heat dissipation part is made of metal for the reason of good thermal conductivity, but in order to avoid parasitic capacitance generated between the circuit and the wiring, the overlap of the heat dissipation part and the circuit or wiring is made small. Need to be placed in. However, in order to obtain sufficient heat dissipation, it is difficult to reduce the pixel pitch, and there is an element that contradicts the improvement of the aperture ratio of the light emitting element.
JP 2005-5252 A

  Deterioration of the light emitting element proceeds due to heat generated by causing the light emitting element to emit light. In addition, when a thermal load is partially generated in the display area, the progress of deterioration of the light emitting element is different in the plane, which causes a problem recognized as display unevenness.

  The present invention has been made to solve the above-described problems of the prior art, and provides a self-luminous display device having a structure with excellent thermal diffusibility and capable of suppressing the progress of element deterioration due to heat generation. The purpose is to do.

  In the self light emitting display device according to the present invention, a first electrode, a first organic light emitting layer having a first light emitting layer, and a second electrode are formed in this order on a thin film transistor formed on a substrate. A self-luminous display device that constitutes a display region by arranging light emitting elements two-dimensionally on the substrate via the thin film transistor, wherein the first electrode is a continuous film inside the display region. It is formed and connected to the heat radiation line outside the display area.

  Since the self-luminous display device of the present invention has a structure with excellent thermal diffusivity, the temperature distribution in the display region can be made uniform and the temperature rise of the display device can be made smaller. In addition, the thermal drift of the thin film transistor disposed on the substrate can be suppressed, and the occurrence of display unevenness can be reduced.

  Furthermore, since it is not necessary to provide an occupied area for disposing the heat radiating portion, the pixel pitch can be narrowed and the aperture ratio can be increased in the display area, and the frame width can be reduced outside the display area.

  Hereinafter, embodiments of a display device according to the present invention will be described with reference to the drawings.

  In addition, the well-known or well-known technique of the said technical field is applied regarding the part which is not illustrated or described in particular in this specification. The embodiments described below are some embodiments of the invention, and the present invention is not limited to these embodiments.

  FIG. 1 is a diagram schematically showing a cross-sectional structure from the pixel region to the periphery. The pixel having the cross-sectional structure shown in FIG. 1 constitutes the organic EL display device of the present invention shown in FIG.

  The organic EL display device according to the present invention will be described with reference to FIG. FIG. 1 is a schematic cross-sectional view showing a peripheral portion of a display region composed of a pixel group, and shows from the outermost peripheral pixel to two pixels and a power supply line provided outside the display region.

  On the insulating substrate 1 on which the first insulating layer 2, the thin film transistor 3, the second insulating layer 4, and the planarizing layer 5 are formed, a first electrode 11, a first organic light emitting layer 12 having a first light emitting layer, Second electrodes 13a and 13b are formed. The first electrode 11 is connected to the power supply line 6 formed on the planarization layer 5. A protective film 7 is formed so as to cover the power supply line 6, the planarization film 5, the first electrode 11, and the second electrodes 13a and 13b.

  The second electrodes 13a and 13b are composed of pattern electrodes corresponding to each pixel, and are connected to the thin film transistor 3 controlled for each pixel through contact holes 14a and 14b. That is, the second electrode is connected to the thin film transistor for each light emitting element. The light emission control of each pixel is performed by controlling the voltage applied between the first electrode 11 and the second electrodes 13a and 13b.

  The first electrode 11 is formed and connected to the first electrode 11 of the adjacent pixel in the same layer so as to straddle the pixel, and is connected to the power supply line 6 disposed outside the display region. In the present embodiment, as shown in FIG. 2, the first electrode 11 is connected in the same layer across all the pixels in the display region plane, and is constituted by one continuous film.

  In the configuration of this embodiment, it is possible to emit one pixel in a single color, and it is possible to display one pixel by controlling the light emission of RGB with three pixels.

  In the present embodiment, the first electrode 11 is made of a conductive material having high thermal conductivity. In the structure of the present invention, the first electrode 11 serving as a heat diffusion path is in contact with the first organic light emitting layer 12 that generates heat. The heat generated in each pixel is the first electrode 11 that is connected to the first electrode 11 because the first electrode 11 that is an electrode of the light emitting element is made of a material having high thermal conductivity. Heat can be dispersed throughout the electrode 11.

  In addition to the first electrode 11, there may be a case where a heat radiating portion serving as a heat diffusion path is provided. In this case, for example, when a heat dissipation portion is provided between the planarization layer 5 and the second insulating layer 4, the first organic light emitting layer 12 having a thickness of 0.1 to 0.3 μm is 1.5 to 2.. The heat radiation to the heat diffusion path arranged via the 5 μm planarizing film 5 is not sufficient. Therefore, heat is locally stored in the planarizing film 5 or the like interposed between the light emitting elements. Further, when the heat dissipating part is provided at a position closer to the insulating substrate 1, the heat diffusibility to the heat dissipating part is further reduced, and heat is stored in the layers interposed therebetween.

  On the other hand, in the configuration of the present embodiment, the first electrode 11 itself constituting the light emitting element serves as a heat diffusion path, so there is no layer interposed between the heat generating portion and the heat radiating portion, and the heat diffusibility is excellent.

  In the present invention, the first electrode 11 is further connected to the power supply line 6 made of a material having thermal conductivity equivalent to or higher than that of the first electrode 11, and the generated heat is distributed over a larger area. It has a configuration that can.

  The heat generated in the pixels is dispersed in the plane of the insulating substrate 1 by the first electrode 11 and the power supply line 6 and is radiated to the outside of the self-luminous display device through the surfaces of the insulating substrate 1 and the protective film 7. The Since the heat radiation to the outside of the self-luminous display device is performed more efficiently as the contact area with the outside is larger, the configuration of the present invention suppresses the concentration of the thermal load generated in a part of the display area, and the self-luminous emission It is effective to disperse heat over the entire surface of the display device.

  1 and 2, the first electrode 11 is formed so as to cover the power supply line 6. However, if sufficient thermal conductivity is ensured between the power supply line 6 and the first electrode 11, the power supply line 6 is not necessarily provided. There is no need to cover the cover.

  2 shows an example in which the power supply line 6 is arranged on both sides in the short side direction of the display area so as to have the same length as the display area. However, the present invention is not limited to the form of FIG. A form in which the area of the heat radiation line is increased is more preferable. At this time, the power supply line 6 can be arranged in the long side direction of the display region. It is also possible to install a new heat dissipation path in contact with the insulating substrate 1 and the protective film 7 for heat dissipation to the outside of the self-luminous display device. At this time, it is possible to efficiently dissipate heat to the heat dissipation path. In addition, the power line 6 can be arranged at an arbitrary location outside the display area. For example, when a metal plate is disposed on the insulating substrate 1 via a heat dissipation sheet to prevent the temperature rise of the self-luminous display device, it is possible to correspond to the bonding surface of the heat dissipation sheet within the surface of the insulating substrate 1 It is effective to dispose heat radiation wires as large as possible for heat radiation.

  Moreover, in the structure of this invention, it is possible to arrange | position the thermal radiation buffer line connected with the 1st electrode 11. FIG. The first electrode 11 that controls light emission can be formed as a continuous film, and the first electrode 11 constituting the light emitting element can be arranged in an enlarged manner. Further, it can be formed of a film continuous with the power supply line 6 around the display area. In other words, in addition to the layout of the first electrode 11 and the power supply line 6 necessary for controlling the light emitting element, the entire surface of the self light emitting display device can be obtained by disposing the heat radiating buffer line that becomes a cool buffer for heat radiation. It is possible to dissipate heat.

  FIG. 2 shows an example in which the heat radiating buffer line 9 connected to the heat radiating line 6 is arranged around the display area and on the long side.

  The display area in the present invention refers to an area in which pixels having the cross-sectional configuration shown in FIG. 1 are two-dimensionally arranged, and is composed of pixels that are not subjected to display driving or are subjected to non-light emission processing. A non-light emitting region can also be provided around the light emitting region.

  In this embodiment, as shown in FIG. 2, the first electrode 11 is connected in the same layer in the display area plane. That is, an example is shown in which the first electrode 11 is formed as a continuous film inside the display area and connected to the heat radiation line outside the display area. However, the present invention is not limited to this configuration. Even when the first electrode 11 is formed in a line shape, since the first electrode 11 is formed with a width equal to or larger than the light emitting area, the first electrode 11 has high thermal diffusibility. In any pixel constituting the display area, the first electrode 11 only needs to be connected to the power supply line 6 formed outside the display area in the same layer, and the shape of the first electrode 11 in the display area and the direction in which the first electrode 11 is connected. Is not limited.

  The configuration of the present embodiment described above has a structure with excellent thermal diffusibility, and can suppress the progress of element deterioration due to heat generation.

  Hereinafter, the present embodiment will be described in more detail.

  In the present embodiment, the first electrode 11 is a highly reflective conductive material and serves as a reflective electrode. For example, it is preferably made of a film in which a metal such as Cr, Al, Ag, Au, Pt or the like is formed to about 50 to 300 nm. This is because the higher the reflectance, the higher the light extraction efficiency. Moreover, these metal films are excellent in heat dissipation, and a high thermal diffusion effect is obtained.

  The second electrodes 13a and 13b are conductive materials with high transmittance and serve as light extraction electrodes. Light emitted from each pixel is extracted through the second electrodes 13a and 13b. The organic EL display device according to this example is a top emission type organic EL display device.

  As the electrode material of the second electrodes 13a and 13b, a material having a high transmittance is preferable. For example, a transparent conductive film such as ITO, IZO, or ZnO, or a semi-transmissive film in which a metal such as Ag, Au, or Al is formed to a thickness of about 10 nm to 30 nm may be used.

  The power supply line 6 is not particularly limited as long as it is a material having high thermal conductivity, but can be formed of any constituent layer of the thin film transistor 3 or the same material and the same film structure as the first electrode 11. In this embodiment, the power supply line 6 is formed on the formed planarizing film 7 and then the first electrode 11 is formed. However, the power supply line 6 is formed simultaneously with the first electrode 11. Also good.

  The heat dissipation buffer line is not particularly limited as long as it is a material having high thermal conductivity, but may be formed of any constituent layer of the thin film transistor 3 or the same material and the same film structure as the first electrode 11.

  The organic light emitting layer is formed as follows.

  For the first organic light emitting layer, at least one selected from an organic light emitting material, a hole injection material, an electron injection material, a hole transport material, and an electron transport material can be used. The range of color selection can be expanded by doping the hole injection material or the hole transport material with an organic light emitting material, or doping the electron injection material or the electron transport material with an organic light emitting material. Furthermore, the organic light emitting layer is preferably an amorphous film from the viewpoint of light emission efficiency.

  As the organic light-emitting material of each color, triarylamine derivatives, stilbene derivatives, polyarylene, aromatic condensed polycyclic compounds, aromatic heterocyclic compounds, aromatic heterocyclic condensed compounds, metal complex compounds, and the like can be used. Moreover, these single oligo bodies or composite oligo bodies can be used. However, the configuration of the present invention is not limited to the exemplified materials.

  The organic light emitting layer may be a layer having a single function of hole injection, hole transport, electron injection, or electron transport, or a layer having a composite function.

  The thickness of the organic light emitting layer is preferably about 0.05 μm to 0.3 μm, and preferably about 0.05 to 0.15 μm.

  As the hole injection and transport material, a phthalocyanine compound, a triarylamine compound, a conductive polymer, a perylene compound, an Eu complex, or the like can be used, but the structure of the present invention is not limited.

  As an example of the electron injection and transport material, Alq3 in which a trimer of 8-hydroxyquinoline is coordinated to aluminum, an azomethine zinc complex, a distyrylbiphenyl derivative system, or the like can be used.

  Next, a transparent electrode is formed and patterned to form second electrodes 13a and 13b. At this time, the second electrodes 13a and 13b and the thin film transistor 3 are connected through the contact holes 14a and 14b.

  As a patterning method of the transparent electrode, it can be performed by the laser processing described above. A YAG laser (including SHG and THG), an excimer laser, or the like generally used for thin film processing is used. The laser light is squeezed to a few μm, or is irradiated onto the substrate in a predetermined pattern through a mask that transmits the contact hole portion as a planar light source.

  As another patterning method, the electrode material may be heated and formed by vapor deposition using a metal mask. Further, the substrate on which the electrode material is formed may be transferred to the insulating substrate 1 by laser ablation while facing the substrate.

  An equivalent circuit of the organic EL display device thus formed is shown in FIG.

  Each pixel includes switching TFTs 101a and 101b, driving TFTs 102a and 102b, an organic light emitting element (organic EL element) 12, and capacitors 103a and 103b.

  Here, the gate electrodes of the switching TFTs 101 a and 101 b are connected to the gate signal line 105. The source regions of the switching TFTs 101a and 101b are connected to the source signal lines 106a and 106b, and the drain regions are connected to the gate electrodes of the driving TFTs 102a and 102b. The source regions of the driving TFTs 102 a and 102 b are connected to the power supply line 107, and the drain region is connected to one electrode of the organic light emitting element 12. In the pixel of FIG. 1, it is connected to the second electrodes 13a and 13b. The other electrode of the organic light emitting element 12 is connected to the first electrode 11 in FIG. The capacitors 103a and 103b are formed so that the electrodes are connected to the gate electrodes of the driving TFTs 102a and 102b and GND. Thus, the driving TFTs 102a and 102b and the organic EL element are connected in series, and the current flowing through the organic EL element is controlled by the driving TFTs 102a and 102b.

  In this embodiment, a TFT switching element is connected to the first electrodes 13a and 13b, and the first electrode 11 is connected as a common electrode.

  As described above, in the self light emitting display device described in this embodiment, the heat generated in the pixel has a structure in which the first electrode 11 constituting the light emitting element crosses the pixel and leads to a power supply line formed outside the display region. Have. Therefore, it is possible to make the temperature distribution uniform in the display area and to further reduce the temperature rise of the display device.

  A second insulating layer and a planarization film layer are formed between the light emitting element and the thin film transistor, and the distance from the light emitting element to the thin film transistor is increased. Since heat from the light-emitting element can be released by the heat radiating portion before the transistor is affected, thermal drift of the thin film transistor disposed on the substrate can be suppressed, and display unevenness can be reduced.

  Furthermore, since it is not necessary to provide an occupied area for disposing the heat radiating portion, the pixel pitch can be narrowed and the aperture ratio can be increased in the display area, and the frame width can be reduced outside the display area.

  The form of the present embodiment will be described with reference to FIG. FIG. 4 is a diagram schematically showing a cross-sectional structure from the pixel region to the periphery.

  In the present embodiment, the second organic light emitting layer 15 and the third electrode 16 having the second light emitting layer are formed on the second electrodes 13a and 13b. The third electrode 16 is a common electrode. The power supply line 6 is formed at the same time in the process of forming the thin film transistor 3 and is formed on the first insulating layer 2. The power line 6 is connected to the first electrode 11 in the region where the second insulating layer 4 and the planarizing layer 5 are removed.

  The third electrode 16 is a common electrode and is electrically connected to the first electrode 11. Although FIG. 4 shows the case where the first electrode 11 and the third electrode 16 are connected at the outer periphery of the display area, the connection location may be inside or outside the display area, and the same voltage is supplied. Is done. Any number of contact holes for conducting the first electrode 11 and the third electrode 16 may be arranged in the display region so that the potential of the third electrode 16 is kept equal. The third electrode 16 is connected to the power supply line 6 through the first electrode 11.

  The material of the third electrode 16 is preferably a material with high transmittance, and is preferably made of a transparent conductive film such as ITO, IZO, ZnO, or an organic conductive film such as polyacetylene, and further, Ag, Al, etc. A semi-transmissive film in which a metal is formed to a thickness of about 10 nm to 30 nm may be used. The third electrode 16 is formed by sputtering, vapor deposition, or the like.

  Other configurations have the same layout and pixel structure as in the first embodiment.

  An equivalent circuit of the organic EL display device thus formed is shown in FIG.

  Each pixel includes switching TFTs 101a and 101b, driving TFTs 102a and 102b, organic light emitting elements 12 and 15, and capacitors 103a and 103b.

  In this embodiment, the TFT switching elements 101a and 101b are connected to the first electrodes 13a and 13b, and the first electrode 11 and the third electrode 16 are connected as a common electrode.

  In the configuration of this example, one pixel can emit light in two colors, and RGB can be displayed as one pixel by controlling light emission of RGB with two pixels. For example, it is possible to adopt a configuration in which R and B are controlled to emit light in one pixel, and G and B are controlled to emit light in a time division manner in the other pixel.

  Alternatively, the organic light emitting layer can be subjected to a non-light emitting process, and one of the two organic light emitting layers of one pixel is subjected to a non-light emitting process, whereby one pixel has B and the other pixel has R. And G can be controlled in a time-sharing manner.

  As non-light-emitting treatment, non-light-emitting can be achieved by irradiating with ultraviolet rays after electrode formation. As light, general UV light such as a mercury lamp may be used as a mask, or an ultraviolet laser such as an excimer laser may be used.

  In the configuration of the present embodiment, the heat generated in the pixel is distributed in the display area plane by the first electrode 11 traversing the pixel and connected to the power supply line 6 formed outside the display area. . Therefore, the heat generated in the display area by the first electrode 11 and the power line 6 can be dispersed. Subsequently, heat is radiated to the outside of the self-luminous display device through the surfaces of the insulating substrate 1 and the protective film 7.

  Therefore, the temperature distribution can be made uniform in the display area, and the temperature rise of the display device can be further reduced. In addition, the thermal drift of the thin film transistor disposed on the substrate can be suppressed, and the occurrence of display unevenness can be reduced.

  Furthermore, since it is not necessary to provide an occupied area for disposing the heat radiating portion, the pixel pitch can be narrowed and the aperture ratio can be increased in the display area, and the frame width can be reduced outside the display area.

  The form of the present embodiment will be described with reference to FIG. FIG. 6 is a diagram schematically showing a cross-sectional structure from the pixel region to the periphery.

  In this embodiment, the second organic light emitting layer 15, the third electrodes 16a and 16b, the third organic light emitting layer 18 having the third light emitting layer, and the fourth electrode 19 are formed on the second electrodes 13a and 13b. ing. The fourth electrode 19 is a common electrode. The power supply line 6 is formed at the same time in the process of forming the thin film transistor 3 and is formed on the first insulating layer 2. The power line 6 is connected to the first electrode 11 in the region where the second insulating layer 4 and the planarizing layer 5 are removed.

  The fourth electrode 19 is a common electrode and is electrically connected to the first electrode 11. Although FIG. 6 shows the case where the first electrode 11 and the fourth electrode 19 are connected at the outer periphery of the display area, the connection location may be inside or outside the display area, and the same voltage is supplied. Is done. Any number of contact holes for conducting the first electrode 11 and the fourth electrode 19 may be arranged in the display region so that the potential of the fourth electrode 19 is kept equal. The fourth electrode 19 is connected to the power supply line 6 through the first electrode 11.

  As a material of the third electrode 16 and the fourth electrode 19, a material having a high transmittance is preferable. For example, it is preferably made of a transparent conductive film such as ITO, IZO or ZnO, or an organic conductive film such as polyacetylene. Furthermore, a semi-transmissive film in which a metal such as Ag or Al is formed to a thickness of about 10 nm to 30 nm may be used. The third electrode 16 is formed by sputtering, vapor deposition, or the like.

  In the pixel Pa, the second electrode 13a and the third electrode 16a are connected by the contact hole 17a and are short-circuited. For this reason, no voltage is applied to the second organic light emitting layer 15 so that light is not emitted. Similarly, in the pixel Pb, the third electrode 16b and the fourth electrode 19 are connected, and the third organic light emitting layer does not emit light.

  Other configurations have the same layout and pixel structure as in the first embodiment.

  An equivalent circuit of the organic EL display device thus formed is shown in FIG.

  Each pixel includes switching TFTs 101a and 101b, driving TFTs 102a and 102b, organic light emitting elements 12, 15, and 18, and capacitors 103a and 103b.

  In this embodiment, a TFT switching element is connected to the first electrodes 13a and 13b, and the first electrode 11 and the fourth electrode 19 are connected as a common electrode.

  In the pixel Pa, the second electrode 13a and the third electrode 16a are connected by the contact hole 17a and have the same potential. Therefore, the light emission control of the first organic light emitting layer 12 is performed by applying a voltage between the first electrode 11 and the second electrode 13 a, and the voltage is applied between the third electrode 16 a and the fourth electrode 19. 3 Light emission control of the organic light emitting layer 18 is performed.

  In the pixel Pb, the third electrode 16a and the fourth electrode 19 are connected by the contact hole 20b and have the same potential. Therefore, the light emission control of the first organic light emitting layer 12 is performed by applying a voltage between the first electrode 11 and the second electrode 13b, and the voltage is applied between the second electrode 13b and the third electrode 16b. 2 Light emission control of the organic light emitting layer 15 is performed.

  In the configuration of this example, one pixel can emit light in two colors, and RGB can be displayed as one pixel by controlling light emission of RGB with two pixels. For example, it is possible to adopt a configuration in which R and B are controlled to emit light in one pixel, and G and B are controlled to emit light in a time division manner in the other pixel. In this embodiment, the first organic light emitting layer 12 is laminated so as to emit R, the second organic light emitting layer 13 is G, and the third organic light emitting layer 18 is B. In the pixel Pa, R and B, Pb emits R and G.

  As a method for forming the contact holes 17a and 20b, laser processing is preferable, and a method generally used for thin film processing such as YAG laser (including SHG and THG) and excimer laser is used. The laser light is squeezed to a few μm, or is irradiated onto the substrate in a predetermined pattern through a mask that transmits the contact hole portion as a planar light source. The diameter of the contact hole is preferably 2 μm to 15 μm.

  In the configuration of the present embodiment, the heat generated in the pixel is dispersed in the display area plane by the first electrode 11 traversing the pixel. Moreover, since it has the structure connected to the power supply line 6 formed outside the display area, the heat generated in the display area by the first electrode 11 and the power supply line 6 can be dispersed. Subsequently, heat is radiated to the outside of the self-luminous display device through the surfaces of the insulating substrate 1 and the protective film 7.

  Therefore, the temperature distribution can be made uniform in the display area, and the temperature rise of the display device can be further reduced. In addition, the thermal drift of the thin film transistor disposed on the substrate can be suppressed, and the occurrence of display unevenness can be reduced.

  Furthermore, since it is not necessary to provide an occupied area for disposing the heat radiating portion, the pixel pitch can be narrowed and the aperture ratio can be increased in the display area, and the frame width can be reduced outside the display area.

  As described above, by selecting the material of the first electrode to the fourth electrode, the first electrode has a higher reflectance than any other electrode.

It is a schematic sectional drawing which shows the structure from the display area of the organic electroluminescent display apparatus in Example 1 of this invention to a power wire. It is a perspective view which shows an example of the electrode layout of the organic electroluminescence display in the Example of this invention. It is a figure which shows the equivalent circuit of the organic electroluminescence display in Example 1 of this invention. It is a schematic sectional drawing which shows the structure from the display area of the organic electroluminescent display apparatus in Example 2 of this invention to a power wire. It is a figure which shows the equivalent circuit of the organic electroluminescence display in Example 2 of this invention. It is a schematic sectional drawing which shows the structure from the display area of the organic electroluminescent display apparatus in Example 3 of this invention to a power wire. It is a figure which shows the equivalent circuit of the organic electroluminescence display in Example 3 of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Insulating substrate 2 1st insulating layer 3 Thin-film transistor (TFT)
4 Second insulating layer 5 Flattening layer 6 Power supply line 7 Protective film 8 Terminal portion 9 Heat dissipation buffer line 11 First electrode 12 First organic light emitting layer 13a, 13b Second electrode 15 Second organic light emitting layer 16, 16a, 16b First 3 electrode 18 3rd organic light emitting layer 19 4th electrode 14a, 14b, 17a, 20b Contact hole 101a, 101b TFT for switching
102a, 102b Driving TFT
103a, 103b Capacitor 105 Gate signal line 106a, 106b Source signal line 107 Power supply line Pa, Pb Pixel

Claims (8)

A light emitting device in which a first electrode, a first organic light emitting layer having a first light emitting layer, and a second electrode are formed in this order on a thin film transistor formed on a substrate is formed on the substrate. A self-luminous display device that constitutes a display region by two-dimensionally arranging it through a thin film transistor,
The self-luminous display device, wherein the first electrode is formed as a continuous film inside the display area and connected to a heat radiation line outside the display area.   The self-luminous display device according to claim 1, wherein the first electrode is connected to a power supply line, and the second electrode is connected to the thin film transistor for each of the light emitting elements.   The self-luminous display according to claim 1 or 2, wherein a second organic light-emitting layer having a second light-emitting layer and a third electrode are formed in this order on the second electrode. apparatus.   4. The self-luminous display device according to claim 3, wherein one of the first organic light-emitting layer and the second organic light-emitting layer is non-light-emitting processed.   The third organic light-emitting layer having a third light-emitting layer and the fourth electrode are stacked in this order on the third electrode. The self-luminous display device described.   The self-luminous display according to claim 5, wherein one of the first organic light-emitting layer, the second organic light-emitting layer, and the third organic light-emitting layer is subjected to non-light-emitting treatment. apparatus.   The self-luminous display device according to claim 1, wherein the first electrode has a heat dissipation buffer line.   The self-luminous display device according to claim 1, wherein the first electrode has a higher reflectance than any of the other electrodes.