JP2010078385A - Radiation image detecting device - Google Patents

Abstract

It is an object of the present invention to reduce coloring of a substrate and a diffuse reflector of a radiological image detection apparatus and obtain good sensitivity.
A photoconductive layer for converting irradiated radiation into an image signal on a substrate, and a plurality of two-dimensionally arranged semiconductor detection elements for detecting the image signal converted by the photoconductive layer. 18 is composed of a solid-state detector 2 laminated with 18, a diffuse reflection plate provided on the substrate 11 side of the solid-state detector 2, and a light irradiation mechanism for irradiating light to the diffuse reflection plate. A radiation image detection apparatus that diffuses and reflects light emitted from an irradiation mechanism and irradiates the solid state detector 2 from the substrate 11 side, and irradiates the photoconductive layer 13 from the substrate 11 side. The substrate 11 and the diffuse reflector are made of glass, and the aluminum content of the glass is 5% by mass or more and the barium content is 0.1% by mass or less.
[Selection] Figure 2

Description

  The present invention relates to a radiographic image detection apparatus suitable for application to a radiographic imaging apparatus such as an X-ray, and more particularly to a radiographic image detection apparatus provided with a light irradiation mechanism.

  Today, in radiation imaging such as X-ray imaging for medical diagnosis, a solid-state radiation detector (with a semiconductor as a main part) is used as a radiation image information recording means, and the subject is transmitted through this solid-state detector. Various radiological image detection apparatuses that detect radiation and obtain an image signal representing a radiographic image related to a subject have been proposed and put into practical use.

  Various types of solid state detectors used in this apparatus have been proposed. For example, from the aspect of the charge generation process that converts radiation into electric charge, the fluorescence emitted from the phosphor when irradiated with radiation is temporarily accumulated in the power storage unit as a signal charge obtained by detecting the photoconductive layer, An indirect conversion type solid state detector that converts the accumulated charge into an image signal (electrical signal) and outputs it, or a signal storage unit that collects signal charges generated in the photoconductive layer when irradiated with radiation by a charge collecting electrode There is a direct conversion type solid-state detector that temporarily accumulates and converts the accumulated charge into an electric signal and outputs it.

  On the other hand, from the aspect of the charge reading process for reading out the accumulated charge to the outside, a light reading method of reading light by irradiating a reading light (reading electromagnetic wave) to a detector, or a TFT (thin film transistor) connected to a power storage unit : A thin film transistor), a CCD (charge coupled device), a CMOS (complementary metal oxide semiconductor) sensor, or the like, which is read out by scanning.

  Among the above, a radiation image detection apparatus combining an indirect conversion method and a TFT readout method includes a scintillator for once converting radiation into light, and an electrical signal representing a radiation image by detecting visible light converted by the scintillator The radiation image detection device is arranged so that the scintillator faces the radiation incident surface, and the radiation image detection device is irradiated with radiation that has passed through the subject, so that the radiation is directly applied to the scintillator. The incident visible light is converted into visible light, and the converted visible light is detected by a solid-state detector and photoelectrically converted into an image signal carrying radiation image information.

  In a radiation image detection apparatus having a TFT readout type solid-state detector, the space between the charge collection electrodes divided for each pixel is not provided with an electrode or the like for discharging the charge. Tends to accumulate in the space. As a result, the electric field formed in the photoconductive layer is distorted by the application of the bias electrode, causing a problem that the sensitive area in the photoconductive layer changes and the sensitivity varies. In addition, after the radiation incidence is stopped, when the charge signal is read, the charges accumulated in the space region between the charge collecting electrodes are gradually swept out and output as an afterimage, which deteriorates the afterimage (lag) characteristics. There's a problem.

  Therefore, a radiation image detection apparatus provided with a light irradiation mechanism (light source for irradiating a backlight) that irradiates light from the substrate side of the solid state detector has been proposed (for example, Patent Document 1). This is because charges can be accumulated in the space between the charge collecting electrodes in advance by irradiating the radiation image detecting device with light by the light irradiation mechanism during irradiation of the radiation image detecting device. Thus, the electric field formed in the photoconductive layer can be distorted in advance. As a result, the charges generated by the radiation irradiation move along a pre-distorted electric field without collecting in the space, and are collected by the charge collecting electrode. That is, the variation in the sensitive area of the photoconductive layer as described above can be suppressed, and the sensitivity variation can be suppressed. In addition, by continuing the light irradiation from the light irradiation mechanism even after the radiation is stopped, it is possible to prevent the charges accumulated in the space region between the charge collecting electrodes from being gradually swept out and becoming an afterimage output. it can. And in patent document 1, in order to utilize the light irradiation from a light irradiation mechanism more efficiently, the diffuse reflection board which diffusely reflects the light from a light irradiation mechanism within a solid state detector is provided.

  In general, alkali-free glass is used for the TFT substrate because the function of the TFT deteriorates when Na dissolves in the TFT manufacturing process. However, this alkali-free glass contains heavy elements, and barium having a particularly high content among them absorbs radiation, which causes the glass substrate to be colored. In the radiation image detection apparatus provided with the light irradiation mechanism, when the glass substrate is colored, the transmittance of the irradiation light from the light irradiation mechanism is reduced, and the effect of removing the residual charge is reduced. The same applies to the diffusive reflector provided to efficiently use light from the light irradiation mechanism.

  By the way, in Patent Document 2, in order to improve the detection efficiency of visible light in the solid state detector and improve the image quality of the obtained radiation image, the solid state detector side is disposed so as to face the surface on the radiation incident side. The radiation image detection apparatus which irradiates radiation from the opposite side is described.

Therefore, in order to improve the detection efficiency of visible light in the solid-state detector while improving the afterimage characteristics in the radiological image detection apparatus, a configuration in which a light irradiation mechanism and a diffuse reflector are provided and radiation is irradiated from the solid-state detector side. It is preferable that
Japanese National Patent Publication No. 11-513221 Japanese Patent No. 3333278

  However, in the case of a radiological image detection apparatus that irradiates radiation from the solid-state detector side and a radiological image detection apparatus that combines the light irradiation mechanism described above, the radiation irradiation amount on the substrate and the diffuse reflector of the solid-state detector is large. Therefore, the above-mentioned coloring problem becomes larger.

  The present invention has been made in view of the above circumstances, and radiation image detection capable of improving visible light detection efficiency at the same time while improving afterimage characteristics by reducing coloring of the substrate and the diffuse reflector of the solid state detector. The object is to provide an apparatus.

  As a first aspect, the radiological image detection apparatus of the present invention includes a photoconductive layer that converts irradiated radiation into an image signal on a substrate, and a plurality of image signals that are converted by the photoconductive layer. A solid state detector in which two-dimensionally arranged semiconductor detector elements are stacked, a diffuse reflector provided on the substrate side of the solid detector, and a light irradiation mechanism for irradiating the diffuse reflector with light The diffuse reflection plate diffuses and reflects the light irradiated from the light irradiation mechanism and irradiates the solid state detector from the substrate side, and the photoconductive layer is irradiated with radiation from the substrate side. The radiographic image detection apparatus, wherein the substrate and the diffuse reflector are made of glass, and the aluminum content of the glass is 5% by mass or more and the barium content is 0.1% by mass or less. It is characterized by

  As a second aspect, the radiological image detection apparatus of the present invention includes a photoconductive layer that converts irradiated radiation into an image signal on a substrate, and a plurality of image signals that are converted by the photoconductive layer. A solid state detector in which two-dimensionally arranged semiconductor detector elements are stacked, a diffuse reflector provided on the substrate side of the solid detector, and a light irradiation mechanism for irradiating the diffuse reflector with light The diffuse reflection plate diffuses and reflects the light irradiated from the light irradiation mechanism and irradiates the solid state detector from the substrate side, and the photoconductive layer is irradiated with radiation from the substrate side. A radiation image detection apparatus, wherein the substrate is made of glass, and the aluminum content of the glass is 5% by mass or more and the barium content is 0.1% by mass or less, and the diffuse reflector Is made of polymer resin It is an butterfly.

  As a third aspect, the radiological image detection apparatus of the present invention includes a photoconductive layer that converts irradiated radiation into an image signal on a substrate, and a plurality of image signals that are converted by the photoconductive layer. A solid state detector in which two-dimensionally arranged semiconductor detector elements are stacked, a diffuse reflector provided on the substrate side of the solid detector, and a light irradiation mechanism for irradiating the diffuse reflector with light The diffuse reflection plate diffuses and reflects the light irradiated from the light irradiation mechanism and irradiates the solid state detector from the substrate side, and the photoconductive layer is irradiated with radiation from the substrate side. The radiation image detection apparatus is configured such that the substrate is made of a polymer resin, the diffuse reflector is made of glass, the aluminum content of the glass is 5% by mass or more, and the barium content is 0.00. 1% by mass or less It is an butterfly.

  As a fourth aspect, the radiological image detection apparatus of the present invention includes a photoconductive layer that converts irradiated radiation into an image signal on a substrate, and a plurality of image signals that are detected by the photoconductive layer. A solid state detector in which two-dimensionally arranged semiconductor detector elements are stacked, a diffuse reflector provided on the substrate side of the solid detector, and a light irradiation mechanism for irradiating the diffuse reflector with light The diffuse reflection plate diffuses and reflects the light irradiated from the light irradiation mechanism and irradiates the solid state detector from the substrate side, and the photoconductive layer is irradiated with radiation from the substrate side. The radiographic image detection apparatus is characterized in that the substrate and the diffuse reflector are made of a polymer resin.

  The radiological image detection apparatus of the present invention is arranged on a substrate in a two-dimensional array that detects a photoconductive layer that converts irradiated radiation into an image signal and an image signal converted by the photoconductive layer. It consists of a solid-state detector in which semiconductor detector elements are stacked, a diffuse reflector provided on the substrate side of this solid detector, and a light irradiation mechanism for irradiating light to the diffuse reflector. A radiation image detecting apparatus that diffuses and reflects light emitted from an irradiation mechanism and irradiates a solid state detector from the substrate side, and irradiates the photoconductive layer with radiation from the substrate side. Alternatively, when the diffuse reflector is made of glass, the aluminum content of the glass is 5% by mass or more, the barium content is 0.1% by mass or less, and the substrate and / or the diffuse reflector is not glass. The high minute Since it was decided made of resin, while improving the afterimage characteristics by reducing the coloration of the substrate and the diffuse reflector, it is possible to increase the detection efficiency of the visible light at the same time.

  The radiation image detection apparatus of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram showing an embodiment of the radiation image detection apparatus of the present invention, and FIG. 2 is an enlarged cross-sectional view of the solid state detector portion shown in FIG. As shown in FIG. 1, in the radiation image detection apparatus 1, a solid state detector 2 and a scintillator 3 for once converting radiation into light are joined by a joining layer 5 and provided on the substrate 11 side of the solid state detector 2. The diffuse reflection plate 20 and a light irradiation means (light irradiation mechanism) 4 for irradiating the diffusion reflection plate 20 with light. The diffusion reflection plate 20 includes a reflection plate 21, a light guide plate 22, and a diffusion plate 23. The diffuse reflector 20 is configured to diffusely reflect the light irradiated from the light irradiation means 4 and irradiate the solid state detector 2 from the substrate 11 side.

  As shown in FIG. 2, the solid state detector 2 is provided with signal lines 12A and 12B made of a conductive film that is two-dimensionally patterned on a substrate 11, and includes a photoconductive layer 13 and a transparent electrode 14. A large number of semiconductor detection elements 18 are formed by a thin film transistor 17 including a photodiode 15 and a semiconductor layer 16.

  The configuration of the solid state detector shown in FIG. 2 is a case where the substrate 11 is a glass substrate. When the substrate is a polymer resin, the configuration of the solid state detector is slightly different. FIG. 3 shows an enlarged cross-sectional view of the solid detector portion when the substrate is made of a polymer resin substrate. As shown in FIG. 3, when the substrate 11 is a polymer resin substrate, an oxide active layer 31, a gate insulating film 32, a gate electrode 33, a drain electrode 34, a source electrode 35, and an interlayer insulating film 36 are formed on the substrate 11. The drain electrode 34 and the source electrode 35 are joined to the resin substrate 11 via the drain terminal 41 and the source terminal 42, respectively. A planarization film 37 and an organic photoelectric conversion layer 38 are provided on the interlayer insulating film 36, a lower electrode 39 is provided on the planarization film 37, and a common upper electrode 40 is provided on the organic photoelectric conversion layer 38. It has been. A thin film transistor is formed by the gate electrode 33, the gate insulating film 32, the source electrode 35, the drain electrode 34, the oxide active layer 31, and the like.

  The light irradiation means 4 is, for example, mounted with a light emitting diode having a central emission wavelength of about 525 nm. The light irradiation means 4 irradiates light during the detection of radiation to remove the remaining charge of the semiconductor detection element 18 in the solid state detector 2. As a result, the electric field can be stabilized, and sensitivity fluctuations and afterimages can be suppressed. The diffuse reflector 20 reflects the light from the light irradiation means 4 so as to diffuse at the interface between the scintillator 3 and the bonding layer 5.

  The radiation image detection apparatus 1 is a radiation image detection apparatus in which radiation is irradiated from the substrate 11 side to the photoconductive layer 13 of the solid state detector 2, and the radiation 7 emitted from the radiation source 6 is irradiated to the subject 8, and the subject 8 is transmitted. The radiation 7 that has passed through the subject 8 is applied to the radiation image detection apparatus 1. The radiation 7 irradiated to the radiation image detection apparatus 1 passes through the solid detector 2 and reaches the scintillator 3. Note that when the radiation 7 passes through the solid state detector 2, the radiation of the substrate 11 reaches the scintillator 3 without being attenuated because the substrate 11 has a low radiation absorption rate.

  The scintillator 3 emits visible light having an intensity corresponding to the intensity of the radiation 7 that has arrived, and this visible light is detected by the photoconductive layer 13. This visible light is photoelectrically converted, and charges are accumulated in the photoconductive layer 13 in accordance with the emission intensity. Thereafter, this electric charge is read out, and an image signal as an electric signal is output. And by irradiating light from the light irradiation mechanism 4 during the irradiation of the radiation 7 to the radiation image detection apparatus 1, the variation of the sensitive area of the photoconductive layer 13 can be suppressed, and the sensitivity variation is suppressed. Can do.

  Here, the substrate of the solid detector is a glass substrate (hereinafter also referred to as a predetermined glass substrate) having an aluminum content of 5% by mass or more and a barium content of 0.1% by mass or less, or a polymer. It is a resin substrate. By making the substrate a predetermined glass substrate or polymer resin substrate, it becomes possible to suppress coloring due to radiation irradiation, and the sensitivity of the radiation that reaches the scintillator is attenuated by increasing the radiation absorption rate of the substrate. It is possible to reduce the decrease.

  The predetermined glass substrate has an aluminum content of 5% by mass or more, preferably 8% by mass or more, and more preferably 11% by mass or more. If the aluminum content is less than 5% by mass, the heat resistance, thermal stability and acid resistance are lowered, which is not preferable. In addition, it is preferable that aluminum content is 20 mass% or less from a viewpoint of the workability as glass. The predetermined glass substrate has a barium content of 0.1% by mass or less. Since barium absorbs radiation and causes the glass substrate to be colored, it is preferable that the glass substrate not be contained.

  In addition, the diffuse reflection plate 20 (the light guide plate 22 when the diffuse reflection plate 20 includes the reflection plate 21, the light guide plate 22, and the diffusion plate 23 as shown in FIG. 1) is also a predetermined glass substrate or polymer resin. It is a substrate. By making the diffuse reflection plate 5 a predetermined glass substrate or polymer resin substrate, it becomes possible to suppress coloring due to irradiation of radiation, and to suppress absorption of irradiation light from the light irradiation mechanism by the diffusion reflection plate. It is possible to prevent the reduction of the residual charge removal effect.

  Both the substrate and the diffuse reflector may be a predetermined glass substrate, the substrate is a predetermined glass substrate and the diffuse reflector is a polymer resin substrate, or the substrate is a polymer resin substrate and the diffuse reflector is a predetermined glass substrate. The glass substrate or both the substrate and the diffuse reflector may be a polymer resin substrate.

  The predetermined glass substrate is not particularly limited as long as the aluminum content is 5% by mass or more and the barium content is 0.1% by mass or less. Examples thereof include Eagle 2000 (manufactured by Corning). It is done.

  As the polymer resin substrate, a material that is chemically and thermally stable and that is not colored by X-ray irradiation for medical use and that can be molded into a sheet or plate can be used. Specifically, polyolefins such as polyethylene and polypropylene, polyvinyl halides such as polyvinyl chloride and polyvinylidene chloride, cellulose derivatives such as cellulose acetate, nitrocellulose, and cellophane, polyamide, polystyrene, polycarbonate, polyimide, polyester, acrylic Resin or the like. Of these, biaxially stretched polyethylene terephthalate having excellent dimensional stability is particularly preferable as the substrate of the solid detector, and acrylic resin is particularly preferable as the material of the diffuse reflector.

The scintillator 3 has a function of converting radiation into visible light. For example, a phosphor layer made of a phosphor material and a binder resin is used. Examples of the phosphor used in the scintillator layer 2 include Gd ₂ O ₂ S: Tb, Y ₂ O ₂ S: Tb, (Gd, Y) ₂ O ₂ S: Tb, La ₂ O ₂ S: Tb, (Gd, Y) ₂ O ₂ S: Tb: Tm, GdTaO ₄ : Tb, Gd ₂ O ₃ .Ta ₂ O ₅ .B ₂ O ₃ : Tb, CaWO ₄ , BaSO ₄ : Pb, LaOBr: Tm, LaOBr: Tb, HfO ₂ : Ti, HfP ₂ O ₇ : Cu, CdWO ₄ , YTaO ₄ : YTaO ₄ : Tm, YTaO ₄ : Nb, ZnS: Ag, BaFCl: Eu, Lu ₂ O ₂ S: Tb, LuSiO ₄ : Ce Any phosphor can be used as long as it exhibits high-efficiency instantaneous light emission by radiation excitation.

Here, a scintillator for once converting radiation into light and a radiation image detecting apparatus of an indirect conversion method for detecting visible light converted by the scintillator and converting it into an electrical signal representing a radiation image will be described as the radiation image detecting apparatus. However, the radiological image detection apparatus of the present invention is not limited to this, signal charges generated in the photoconductive layer when irradiated with radiation are collected by the charge collection electrode and temporarily accumulated in the power storage unit, The present invention can also be applied to a direct-conversion radiation image detection apparatus that converts accumulated charges into electrical signals and outputs them.
Examples of the radiation image detection apparatus of the present invention are shown below.

Example 1
A signal line made of an Al: Nd conductive film, two-dimensionally patterned on a predetermined glass substrate, a photodiode made of an a-Si photoconductive layer and an ITO (Indium Tin Oxide) transparent electrode, and a semiconductor layer A solid state detector was fabricated by forming a semiconductor detection element comprising a thin film transistor. Next, Gd ₂ O ₂ S: Tb phosphor particles having an average particle size of 5 μm are dispersed in a urethane resin binder, and this coating solution is applied to the surface of PET coated with a silicone-based release agent using a doctor blade. After drying, the film was peeled off from the temporary support, and bonded to another PET support on which a conductive layer and a reflective layer had been laminated in advance via an acrylic adhesive to obtain a scintillator sheet. The solid state detector and the scintillator sheet were bonded together with an acrylic adhesive, and a readout circuit was connected. Finally, a backlight was provided using an LED having a peak emission wavelength of 940 to 950 nm and a diffuse reflector made of opal glass to produce a radiation image detection apparatus.

(Example 2)
In Example 1, the radiation image detection apparatus was produced similarly to Example 1 except having produced the diffuse reflection board using the beaded light-guide plate (product name: Panebee, Kimoto Co., Ltd.).

(Example 3)
In Example 1, the substrate of the solid state detector was made of PET resin, and a gold film was laminated on the substrate by 30 nm, and the drain terminal and the source terminal 3 were formed by the photolithography method and the lift-off method. Further thereon, an amorphous film (IGZO) of In: Ga: Zn = 1.00: 0.94: 0.65 was formed by sputtering. Finally, a Y ₂ O ₃ film used as a gate insulating film was formed by an electron beam evaporation method, gold (Au) was formed thereon, and a gate terminal was formed by a photolithography method and a lift-off method. Subsequently, an organic insulating material was formed by coating to form an interlayer insulating film, and a planarizing layer was further formed. At that time, contact holes for electrodes were formed. Furthermore, ITO was formed thereon by 300 nm by sputtering to form a lower electrode, and the drain electrode and the lower electrode were connected via a contact hole. On top of this, 50 nm of Alq3 (aluminum quinoline) is vapor-deposited, 100 nm of coumarin 6 is vapor-deposited thereon to form an organic photoelectric conversion layer (Alq3-coumarin 6), ZnS is vapor-deposited 200 nm, and Ag is vapor-deposited 10 nm. A common upper electrode (ZnS-Ag-ZnS) was formed by depositing ZnS at a thickness of 50 nm to produce an organic photoelectric conversion element. The solid state detector and the scintillator sheet were bonded together with a bonding layer made of an acrylic adhesive, and a readout circuit was connected. Finally, a backlight was provided using an LED having a peak emission wavelength of 940 to 950 nm and a diffuse reflector made of opal glass to produce a radiation image detection apparatus.

Example 4
In Example 3, the radiation image detection apparatus was produced like Example 3 except having produced the diffuse reflection board using the beaded light-guide plate (product name: Panebee, Kimoto Co., Ltd.).

(Comparative Example 1)
A radiographic image detection apparatus was produced in the same manner as in Example 1 except that the glass substrate of the solid detector was changed to glass having the composition shown in Table 2 in Example 1.

(Comparative Example 2)
In Example 3, a radiological image detection apparatus was produced in the same manner as in Example 1 except that the PET resin substrate of the solid detector was changed to glass having the composition described in the table.

(Measuring method of glass composition)
About the composition of glass, it measured as a mass percentage using ICP-MS and ICP-AES.

(Evaluation)
The coloration of the glass substrate by X-ray irradiation was evaluated by the amount of change in absorbance at 940 to 950 nm before and after X-ray irradiation with a tube voltage of 80 kV was performed for a total of 60000 X-rays. The afterimage (lag) was evaluated as follows based on the signal value detected 60 seconds after irradiation with 80 kV 400 mR.
Less than 6μR ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ◎
6μR or more and less than 12μR ・ ・ ・ ・ ・ ・ ○
12μR or more and less than 24μR …… △
24μR or more
Note that the lag before irradiation with 60000 X-rays in both the apparatuses of Example 1 and Comparative Example 1 was ◎. The results are shown in Table 1, and the composition measurement results of the glasses used in Examples and Comparative Examples are shown in Table 2.

As is apparent from Tables 1, 2 and 3, Examples 1 and 2 in which the Ba composition of the glass substrate of the solid state detector is 0% by mass are glass or resin in which the Ba composition of the diffuse reflector is 0% by mass, respectively. In this case, the substrate was not colored by X-rays and showed a good lag. In Examples 3 and 4 in which the substrate of the solid detector is resin, each glass is a glass or resin substrate having a Ba composition of 0% by mass of the diffuse reflector, but in this case, there is no coloring due to X-rays. Although the rug slightly increased, it was a good rug for practical use.
On the other hand, the substrate of the solid detector and the diffuse reflector are both glass, the Ba composition of the glass substrate of the solid detector is 7.3% by mass, and the Ba composition of the diffuse reflector is 8.0%. In Comparative Example 2, the afterimage was remarkable due to coloring by X-rays, and was not practical.

Schematic schematic diagram showing an embodiment of the radiation image detection apparatus of the present invention Expanded sectional view of the solid state detector Expanded sectional view showing another embodiment of the solid state detector

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Radiographic image detection apparatus 2 Solid state detector 3 Scintillator 4 Light irradiation means 5 Bonding layer 6 Radiation source 7 Radiation 8 Subject
11 Board
13 Photoconductive layer
18 Semiconductor devices
20 Diffuse reflector

Claims (4)

A photoconductive layer that converts irradiated radiation into an image signal and a plurality of two-dimensionally arranged semiconductor detection elements that detect the image signal converted by the photoconductive layer are stacked on the substrate. A solid state detector;
It comprises a diffuse reflection plate provided on the substrate side of the solid state detector and a light irradiation mechanism for irradiating the diffusion reflection plate with light, and the diffuse reflection plate diffusely reflects the light irradiated from the light irradiation mechanism. A radiation image detecting device for irradiating the solid state detector from the substrate side, wherein the photoconductive layer is irradiated with radiation from the substrate side,
The radiographic image detection apparatus, wherein the substrate and the diffuse reflector are made of glass, and the glass has an aluminum content of 5% by mass or more and a barium content of 0.1% by mass or less. A photoconductive layer that converts irradiated radiation into an image signal and a plurality of two-dimensionally arranged semiconductor detection elements that detect the image signal converted by the photoconductive layer are stacked on the substrate. A solid state detector;
It comprises a diffuse reflector provided on the substrate side of the solid state detector and a light irradiation mechanism for irradiating the diffuse reflector with light, and the diffuse reflector diffusely reflects the light irradiated from the light irradiation mechanism. A radiation image detecting device for irradiating the solid state detector from the substrate side, wherein the photoconductive layer is irradiated with radiation from the substrate side,
The substrate is made of glass, the aluminum content of the glass is 5% by mass or more, the barium content is 0.1% by mass or less, and the diffuse reflector is made of a polymer resin. Radiation image detection device. A photoconductive layer that converts irradiated radiation into an image signal and a plurality of two-dimensionally arranged semiconductor detection elements that detect the image signal converted by the photoconductive layer are stacked on the substrate. A solid state detector;
It comprises a diffuse reflector provided on the substrate side of the solid state detector and a light irradiation mechanism for irradiating the diffuse reflector with light, and the diffuse reflector diffusely reflects the light irradiated from the light irradiation mechanism. A radiation image detecting device for irradiating the solid state detector from the substrate side, wherein the photoconductive layer is irradiated with radiation from the substrate side,
The substrate is made of a polymer resin, the diffuse reflector is made of glass, the aluminum content of the glass is 5% by mass or more, and the barium content is 0.1% by mass or less. Radiation image detection device. A photoconductive layer that converts irradiated radiation into an image signal and a plurality of two-dimensionally arranged semiconductor detection elements that detect the image signal converted by the photoconductive layer are stacked on the substrate. A solid state detector;
It comprises a diffuse reflector provided on the substrate side of the solid state detector and a light irradiation mechanism for irradiating the diffuse reflector with light, and the diffuse reflector diffusely reflects the light irradiated from the light irradiation mechanism. A radiation image detecting device for irradiating the solid state detector from the substrate side, wherein the photoconductive layer is irradiated with radiation from the substrate side,
The radiation image detecting apparatus, wherein the substrate and the diffuse reflector are made of a polymer resin.

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