JP2010069612A

JP2010069612A - Conditioner for semiconductor polishing cloth, method for manufacturing conditioner for semiconductor polishing cloth, and semiconductor polishing apparatus

Info

Publication number: JP2010069612A
Application number: JP2009029147A
Authority: JP
Inventors: Masato Nakamura; 正人中村; Masakuni Takahashi; 正訓高橋
Original assignee: Mitsubishi Materials Corp
Current assignee: Mitsubishi Materials Corp
Priority date: 2008-08-20
Filing date: 2009-02-10
Publication date: 2010-04-02

Abstract

【課題】切刃の研削性能が充分に確保されるとともに、工具寿命が長期に亘り安定して確保される半導体研磨布用コンディショナー、半導体研磨布用コンディショナーの製造方法及び半導体研磨装置を提供する。
【解決手段】基板２，１２の表面から突出した切刃４を用いて、基板２，１２に対向配置された半導体研磨布に研削加工を施す半導体研磨布用コンディショナーであって、切刃４は、半導体研磨布側を向く頂面５と、頂面５に交差して基板２，１２の表面側に延びる壁面６と、を備え、頂面５には、該頂面５と壁面６との交差稜線部に縁部７ｂを有する第１ダイヤモンド膜７が被覆されるとともに、第１ダイヤモンド膜７の表面７ａから少なくとも壁面６にかけては第２ダイヤモンド膜８が被覆されていることを特徴とする。
【選択図】図５The present invention provides a conditioner for a semiconductor polishing cloth, a method for manufacturing a conditioner for a semiconductor polishing cloth, and a semiconductor polishing apparatus in which the cutting performance of the cutting edge is sufficiently ensured and the tool life is stably ensured over a long period of time.
A conditioner for a semiconductor polishing cloth that uses a cutting blade 4 protruding from the surface of a substrate 2 and 12 to grind the semiconductor polishing cloth disposed opposite to the substrate 2 and 12, wherein the cutting blade 4 includes: A top surface 5 facing the semiconductor polishing cloth side, and a wall surface 6 that intersects the top surface 5 and extends to the surface side of the substrates 2 and 12, and the top surface 5 includes the top surface 5 and the wall surface 6. The first diamond film 7 having the edge 7b at the intersecting ridge line portion is covered, and the second diamond film 8 is covered from the surface 7a of the first diamond film 7 to at least the wall surface 6.
[Selection] Figure 5

Description

本発明は、半導体ウエハ等の研磨を行う半導体研磨装置の半導体研磨布のコンディショニングに用いられる半導体研磨布用コンディショナー、半導体研磨布用コンディショナーの製造方法及び半導体研磨装置に関する。 The present invention relates to a conditioner for a semiconductor polishing cloth used for conditioning a semiconductor polishing cloth of a semiconductor polishing apparatus for polishing a semiconductor wafer or the like, a method for manufacturing a conditioner for a semiconductor polishing cloth, and a semiconductor polishing apparatus.

近年、半導体産業の進展とともに、金属、半導体、セラミックスなどの表面を高精度に仕上げる加工方法の必要性が高まっており、特に、半導体ウエハでは、その集積度の向上とともにナノメーターオーダーの表面仕上げが要求されている。このような高精度の表面仕上げに対応するために、半導体ウエハに対して、多孔性のパッド（半導体研磨布）を用いたＣＭＰ（ケミカルメカニカルポリッシュ）研磨が一般に行われている。 In recent years, with the progress of the semiconductor industry, there is an increasing need for processing methods for finishing surfaces of metals, semiconductors, ceramics, etc. with high precision. It is requested. In order to cope with such a high-precision surface finish, CMP (chemical mechanical polishing) polishing using a porous pad (semiconductor polishing cloth) is generally performed on a semiconductor wafer.

半導体ウエハ等の研磨に用いられるパッドは、研磨時間が経過していくにつれ目詰まりや圧縮変形を生じ、その表面状態が次第に変化していく。すると、研磨速度の低下や不均一研磨等の好ましくない現象が生じるので、パッドの表面を定期的に研削加工することにより、パッドの表面状態を一定に保って、良好な研磨状態を維持する工夫が行われている。 A pad used for polishing a semiconductor wafer or the like becomes clogged or compressively deformed as the polishing time elapses, and its surface state gradually changes. Then, undesired phenomena such as a decrease in polishing rate and non-uniform polishing occur, so by periodically grinding the surface of the pad, it is possible to keep the surface state of the pad constant and maintain a good polishing state Has been done.

パッドを研削加工するために用いられる半導体研磨布用コンディショナーの一例として、特許文献１に開示されたものが知られている。特許文献１の半導体研磨布用コンディショナーでは、基板の表面に複数の円錐台又は四角錘台（切刃）が形成されており、これら切刃の頂面部分を半導体研磨布に押し付け研削することで、パッドの研磨状態を一定に維持している。
また、このような半導体研磨布用コンディショナーは、切刃及び基板の表面をＣＶＤ法により形成したダイヤモンド膜でコーティングしており、このダイヤモンド膜により切刃の磨耗が抑制され、工具寿命が確保されている。 As an example of a conditioner for a semiconductor polishing cloth used for grinding a pad, one disclosed in Patent Document 1 is known. In the conditioner for semiconductor polishing cloth of Patent Document 1, a plurality of truncated cones or square frustums (cutting blades) are formed on the surface of the substrate, and the top surface portion of these cutting blades is pressed against the semiconductor polishing cloth and ground. The polishing state of the pad is kept constant.
In addition, such a conditioner for a semiconductor polishing cloth has the cutting blade and the surface of the substrate coated with a diamond film formed by a CVD method, so that the wear of the cutting blade is suppressed and the tool life is secured. Yes.

特許第３８２９０９２号公報Japanese Patent No. 3829092

しかしながら、このように切刃及び基板の表面をダイヤモンド膜で被覆した半導体研磨布用コンディショナーにおいては、図１１（ａ）（ｂ）に示すように、切刃１０１（１１１）のエッジ１０１ａ（１１１ａ）がダイヤモンド膜１０２（１１２）に被覆された際、曲面状に形成されることがあった。すなわち、工具寿命を確保するためにダイヤモンド膜１０２（１１２）にある程度の厚みをもたせると、該ダイヤモンド膜１０２（１１２）が形成される際に切刃１０１（１１１）のエッジ１０１ａ（１１１ａ）を丸めてしまい、研削性能を低減させてしまうことがあった。その一方で、研削性能を確保するためにダイヤモンド膜１０２（１１２）を薄く形成すると、特に切刃１０１（１１１）の寿命を左右するその頂面部分のダイヤモンド膜１０２（１１２）が早期に磨耗することにより、工具寿命が充分に確保できないという問題が生じる。 However, in the conditioner for a semiconductor polishing cloth in which the surface of the cutting edge and the substrate is coated with a diamond film in this way, as shown in FIGS. 11A and 11B, the edge 101a (111a) of the cutting edge 101 (111). May be formed into a curved surface when coated with the diamond film 102 (112). That is, if the diamond film 102 (112) is given a certain thickness in order to ensure the tool life, the edge 101a (111a) of the cutting edge 101 (111) is rounded when the diamond film 102 (112) is formed. As a result, the grinding performance may be reduced. On the other hand, when the diamond film 102 (112) is formed thin in order to ensure the grinding performance, the diamond film 102 (112) on the top surface portion that determines the life of the cutting edge 101 (111) is worn early. This causes a problem that the tool life cannot be sufficiently secured.

本発明は、このような事情に鑑みてなされたものであって、切刃の研削性能が充分に確保されるとともに、工具寿命が長期に亘り安定して確保される半導体研磨布用コンディショナー、半導体研磨布用コンディショナーの製造方法及び半導体研磨装置を提供することを目的とする。 The present invention has been made in view of such circumstances, and a conditioner for a semiconductor polishing cloth, in which the cutting performance of the cutting edge is sufficiently ensured and the tool life is stably secured over a long period of time, and the semiconductor An object of the present invention is to provide a method for manufacturing a conditioner for polishing cloth and a semiconductor polishing apparatus.

前記目的を達成するために、本発明は以下の手段を提案している。
すなわち本発明は、基板の表面から突出した切刃を用いて、前記基板に対向配置された半導体研磨布に研削加工を施す半導体研磨布用コンディショナーであって、前記切刃は、前記半導体研磨布側を向く頂面と、前記頂面に交差して前記基板の表面側に延びる壁面と、を備え、前記頂面には、該頂面と前記壁面との交差稜線部に縁部を有する第１ダイヤモンド膜が被覆されるとともに、前記第１ダイヤモンド膜の表面から少なくとも前記壁面にかけては第２ダイヤモンド膜が被覆されていることを特徴とする。 In order to achieve the above object, the present invention proposes the following means.
That is, the present invention is a conditioner for a semiconductor polishing cloth that uses a cutting blade protruding from the surface of the substrate to grind the semiconductor polishing cloth disposed opposite to the substrate, wherein the cutting blade includes the semiconductor polishing cloth. A top surface that faces the side surface and a wall surface that intersects the top surface and extends to the surface side of the substrate, and the top surface has an edge at an intersection ridge line portion between the top surface and the wall surface. One diamond film is coated, and a second diamond film is coated from the surface of the first diamond film to at least the wall surface.

本発明に係る半導体研磨布用コンディショナーによれば、切刃の頂面が第１ダイヤモンド膜に覆われており、この第１ダイヤモンド膜は、その縁部が頂面と壁面との交差稜線部に位置していて、すなわち切刃の壁面に連続するようにされている。そして、この第１ダイヤモンド膜の表面にはさらに第２ダイヤモンド膜が被覆されており、これら第１、第２ダイヤモンド膜によって、切刃寿命を左右するその頂面を覆うダイヤモンド膜の厚みが充分に確保される。その一方で、切刃のエッジは第１ダイヤモンド膜表面の前記壁面の延長上に位置することになり、このエッジは、ダイヤモンド膜全体の厚みよりは薄く形成されるから、切刃がシャープエッジに形成される。従って、切刃の磨耗が確実に防止され、工具寿命が長期に亘り安定して確保されるとともに、切刃の研削性能が向上する。 According to the conditioner for semiconductor polishing cloth according to the present invention, the top surface of the cutting edge is covered with the first diamond film, and the edge of the first diamond film is at the intersection ridge line portion between the top surface and the wall surface. It is located, that is, it is made to continue to the wall surface of the cutting edge. The surface of the first diamond film is further covered with a second diamond film, and the thickness of the diamond film covering the top surface that affects the cutting edge life is sufficiently increased by the first and second diamond films. Secured. On the other hand, the edge of the cutting edge is positioned on the extension of the wall surface of the first diamond film surface, and this edge is formed thinner than the entire thickness of the diamond film, so that the cutting edge becomes a sharp edge. It is formed. Therefore, the wear of the cutting edge is surely prevented, the tool life is stably ensured for a long time, and the grinding performance of the cutting edge is improved.

また、本発明に係る半導体研磨布用コンディショナーにおいて、前記第２ダイヤモンド膜の厚みが、前記第１ダイヤモンド膜の厚み以下に設定されていることとしてもよい。
本発明に係る半導体研磨布用コンディショナーによれば、切刃を一層シャープエッジに形成でき、研削性能がより向上する。 In the conditioner for a semiconductor polishing cloth according to the present invention, the thickness of the second diamond film may be set to be equal to or less than the thickness of the first diamond film.
According to the conditioner for semiconductor polishing cloth according to the present invention, the cutting edge can be formed with a sharper edge and the grinding performance is further improved.

また、本発明に係る半導体研磨布用コンディショナーにおいて、前記第２ダイヤモンド膜の厚みが、０．１μｍ〜１０μｍの範囲に設定されることとしてもよい。
本発明に係る半導体研磨布用コンディショナーによれば、第２ダイヤモンド膜の厚みが比較的薄く形成されているので、切刃の研削性能がさらに充分に確保できる。 In the conditioner for a semiconductor polishing cloth according to the present invention, the thickness of the second diamond film may be set in a range of 0.1 μm to 10 μm.
According to the conditioner for a semiconductor polishing cloth according to the present invention, since the second diamond film is formed to be relatively thin, the grinding performance of the cutting edge can be sufficiently ensured.

また、本発明に係る半導体研磨布用コンディショナーにおいて、前記第１ダイヤモンド膜が、複数の膜から形成されていることとしてもよい。 In the conditioner for a semiconductor polishing cloth according to the present invention, the first diamond film may be formed of a plurality of films.

本発明に係る半導体研磨布用コンディショナーによれば、第１ダイヤモンド膜が複数の膜から形成されているので、例えばこれら各膜を硬度や表面粗さ等の性質の異なる種々のダイヤモンド膜で構成することができる。従って、第１ダイヤモンド膜を目的に合わせ様々に形成することができ、半導体研磨布用コンディショナーに対する多種多様な要望、用途に対応できる。 According to the conditioner for semiconductor polishing cloth according to the present invention, since the first diamond film is formed of a plurality of films, for example, each of these films is composed of various diamond films having different properties such as hardness and surface roughness. be able to. Therefore, the first diamond film can be formed in various ways according to the purpose, and can meet various demands and uses for the conditioner for semiconductor polishing cloth.

また、本発明は、前述した半導体研磨布用コンディショナーの製造方法であって、基板の表面に前記第１ダイヤモンド膜を形成する工程と、前記切刃となる部分を除いて前記第１ダイヤモンド膜及び前記基板の表面を削ることにより、前記頂面に前記第１ダイヤモンド膜が被覆された前記切刃を形成する工程と、前記第１ダイヤモンド膜の表面から少なくとも前記壁面にかけて前記第２ダイヤモンド膜を形成する工程と、を備えることを特徴とする。 The present invention also provides a method for manufacturing a conditioner for a semiconductor polishing cloth as described above, the step of forming the first diamond film on the surface of a substrate, and the first diamond film, except for the portion that becomes the cutting edge. Cutting the surface of the substrate to form the cutting edge having the top surface covered with the first diamond film; and forming the second diamond film from the surface of the first diamond film to at least the wall surface. And a step of performing.

本発明に係る半導体研磨布用コンディショナーの製造方法によれば、基板の表面に第１ダイヤモンド膜を形成した後、第１ダイヤモンド膜及び基板の表面を削って切刃を形成させ、切刃及び基板の表面を第２ダイヤモンド膜のみで覆うため、例えば初めに基板表面に切刃を形成してから全体に第１ダイヤモンド膜を被覆し、次いで切刃の頂面を除いて第１ダイヤモンド膜を除去してから第２ダイヤモンド膜を被覆したりするのに比べて容易に前記構成の半導体研磨布用コンディショナーを製造することができる。 According to the method for manufacturing a conditioner for a semiconductor polishing cloth according to the present invention, after the first diamond film is formed on the surface of the substrate, the first diamond film and the surface of the substrate are scraped to form the cutting blade. In order to cover the surface of the substrate with only the second diamond film, for example, a cutting edge is first formed on the substrate surface, and then the entire surface is covered with the first diamond film, and then the first diamond film is removed except for the top surface of the cutting edge. Then, the conditioner for a semiconductor polishing cloth having the above-described configuration can be easily manufactured as compared with the case where the second diamond film is coated.

また、本発明に係る半導体研磨布用コンディショナーの製造方法において、前記基板の表面に、前記表面に対し傾斜した底面を有する凹部を形成した後、この凹部も含めて前記基板の表面に前記第１ダイヤモンド膜を形成する工程と、前記凹部の底面が前記頂面となるように前記第１ダイヤモンド膜及び前記基板の表面を削り、前記切刃を形成する工程と、前記第１ダイヤモンド膜の表面から少なくとも前記壁面にかけて前記第２ダイヤモンド膜を形成する工程と、を備えることとしてもよい。 In the method for manufacturing a conditioner for a semiconductor polishing cloth according to the present invention, a recess having a bottom surface inclined with respect to the surface is formed on the surface of the substrate, and then the first surface is formed on the surface of the substrate including the recess. A step of forming a diamond film, a step of cutting the surfaces of the first diamond film and the substrate so that a bottom surface of the recess becomes the top surface, and forming the cutting edge; and a surface of the first diamond film And a step of forming the second diamond film over at least the wall surface.

本発明に係る半導体研磨布用コンディショナーの製造方法によれば、基板の表面に、該表面に対し傾斜した底面を有する凹部を形成した後、第１ダイヤモンド膜及び基板の表面を削ってこの凹部の底面を頂面とした切刃が形成されるので、切刃の頂面が基板の表面に対し傾斜して形成される。従って、切刃の半導体研磨布側に突出するエッジがよりシャープに形成されて、半導体研磨布を研削加工する性能がより向上した半導体研磨布用コンディショナーを製造することができる。 According to the method for manufacturing a conditioner for a semiconductor polishing cloth according to the present invention, a recess having a bottom surface inclined with respect to the surface is formed on the surface of the substrate, and then the surface of the first diamond film and the substrate is shaved. Since the cutting blade having the bottom surface as the top surface is formed, the top surface of the cutting blade is formed to be inclined with respect to the surface of the substrate. Therefore, the conditioner for semiconductor polishing cloth in which the edge protruding toward the semiconductor polishing cloth side of the cutting edge is formed more sharply and the performance of grinding the semiconductor polishing cloth is further improved can be manufactured.

また、本発明は、半導体研磨布及び半導体研磨布用コンディショナーを備えた半導体研磨装置であって、前述の半導体研磨布用コンディショナーを用いたことを特徴としている。
本発明に係る半導体研磨装置によれば、半導体研磨布用コンディショナーが半導体研磨布を長期に亘り安定して精度よく研削加工するので、半導体研磨の加工精度が向上するとともに生産性が高められる。 The present invention also provides a semiconductor polishing apparatus comprising a semiconductor polishing cloth and a semiconductor polishing cloth conditioner, wherein the conditioner for a semiconductor polishing cloth is used.
According to the semiconductor polishing apparatus of the present invention, since the semiconductor polishing cloth conditioner grinds the semiconductor polishing cloth stably and accurately for a long period of time, the processing accuracy of semiconductor polishing is improved and the productivity is increased.

本発明に係る半導体研磨布用コンディショナー及びこれを用いた半導体研磨装置によれば、切刃の磨耗が防止され、工具寿命が長期に亘り安定して確保されるとともに、切刃の研削性能が向上する。
また、本発明に係る半導体研磨布用コンディショナーの製造方法によれば、このような半導体研磨布用コンディショナーを比較的容易に製造することができる。 According to the conditioner for semiconductor polishing cloth and the semiconductor polishing apparatus using the same according to the present invention, wear of the cutting blade is prevented, the tool life is stably secured for a long period of time, and the grinding performance of the cutting blade is improved. To do.
Moreover, according to the method for manufacturing a conditioner for a semiconductor polishing pad according to the present invention, such a conditioner for a semiconductor polishing pad can be manufactured relatively easily.

本発明の一実施形態に係る半導体研磨布用コンディショナーの一例を示す概略平面図である。It is a schematic plan view which shows an example of the conditioner for semiconductor polishing cloth which concerns on one Embodiment of this invention. 図１のＡ部を拡大して示す部分平面図である。It is a fragmentary top view which expands and shows the A section of FIG. 本発明の一実施形態に係る半導体研磨布用コンディショナーの他の例を示す概略平面図である。It is a schematic plan view which shows the other example of the conditioner for semiconductor polishing cloth which concerns on one Embodiment of this invention. 本発明の一実施形態に係る半導体研磨布用コンディショナーの切刃の配置を示す概略斜視図である。It is a schematic perspective view which shows arrangement | positioning of the cutting blade of the conditioner for semiconductor polishing cloth which concerns on one Embodiment of this invention. 本発明の一実施形態に係る半導体研磨布用コンディショナーの切刃の一例を示す概略側断面図である。It is a schematic sectional side view which shows an example of the cutting blade of the conditioner for semiconductor polishing cloth which concerns on one Embodiment of this invention. 本発明の一実施形態に係る半導体研磨布用コンディショナーの切刃の他の例を示す概略側断面図である。It is a schematic sectional side view which shows the other example of the cutting blade of the conditioner for semiconductor polishing cloth which concerns on one Embodiment of this invention. 本発明の一実施形態に係る半導体研磨布用コンディショナーの切刃の一例の作製手順を示す説明図である。It is explanatory drawing which shows the preparation procedure of an example of the cutting blade of the conditioner for semiconductor polishing cloth which concerns on one Embodiment of this invention. 本発明の一実施形態に係る半導体研磨布用コンディショナーの切刃の他の例の作製手順を示す説明図である。It is explanatory drawing which shows the preparation procedures of the other example of the cutting blade of the conditioner for semiconductor polishing cloth which concerns on one Embodiment of this invention. 本発明の一実施形態に係る半導体研磨布用コンディショナーの切刃を３層以上のダイヤモンド膜で覆う場合の作成手順を示す説明図である。It is explanatory drawing which shows the preparation procedure in the case of covering the cutting blade of the conditioner for semiconductor polishing cloth which concerns on one Embodiment of this invention with the diamond film | membrane of three or more layers. 本発明の一実施形態に係る半導体研磨装置の概略構成を示す斜視図である。1 is a perspective view showing a schematic configuration of a semiconductor polishing apparatus according to an embodiment of the present invention. 従来の半導体研磨布用コンディショナーの切刃の一例及び他の例を示す概略側断面図である。It is a schematic sectional side view which shows an example of the cutting blade of the conventional conditioner for semiconductor polishing cloths, and another example.

図１は本発明の一実施形態に係る半導体研磨布用コンディショナーの一例を示す概略平面図、図２は図１のＡ部を拡大して示す部分平面図、図３は本発明の一実施形態に係る半導体研磨布用コンディショナーの他の例を示す概略平面図、図４は本発明の一実施形態に係る半導体研磨布用コンディショナーの切刃の配置を示す概略斜視図、図５は本発明の一実施形態に係る半導体研磨布用コンディショナーの切刃の一例を示す概略側断面図、図６は本発明の一実施形態に係る半導体研磨布用コンディショナーの切刃の他の例を示す概略側断面図、図７は本発明の一実施形態に係る半導体研磨布用コンディショナーの切刃の一例の作製手順を示す説明図、図８は本発明の一実施形態に係る半導体研磨布用コンディショナーの切刃の他の例の作製手順を示す説明図、図９は本発明の一実施形態に係る半導体研磨布用コンディショナーの切刃を３層以上のダイヤモンド膜で覆う場合の作成手順を示す説明図、図１０は本発明の一実施形態に係る半導体研磨装置の概略構成を示す斜視図である。 FIG. 1 is a schematic plan view showing an example of a conditioner for a semiconductor polishing cloth according to an embodiment of the present invention, FIG. 2 is a partial plan view showing an enlarged portion A of FIG. 1, and FIG. 3 is an embodiment of the present invention. 4 is a schematic plan view showing another example of the conditioner for semiconductor polishing cloth according to the present invention, FIG. 4 is a schematic perspective view showing the arrangement of the cutting blades of the conditioner for semiconductor polishing cloth according to one embodiment of the present invention, and FIG. FIG. 6 is a schematic sectional side view showing an example of a cutting edge of a conditioner for a semiconductor polishing cloth according to an embodiment. FIG. 6 is a schematic sectional side view showing another example of the cutting edge of a conditioner for a semiconductor polishing cloth according to an embodiment of the present invention. FIG. 7 is an explanatory view showing a manufacturing procedure of an example of a cutting edge of a conditioner for a semiconductor polishing cloth according to an embodiment of the present invention. FIG. 8 is a cutting edge of a conditioner for a semiconductor polishing cloth according to an embodiment of the present invention. Other examples of hand making FIG. 9 is an explanatory diagram showing a production procedure when the cutting edge of the conditioner for a semiconductor polishing cloth according to one embodiment of the present invention is covered with three or more diamond films, and FIG. 10 is an embodiment of the present invention. It is a perspective view which shows schematic structure of the semiconductor polishing apparatus which concerns on a form.

図１、図２に示すように、本実施形態の一例の半導体研磨布用コンディショナー１０は、略リング状のステンレス等からなる台金１の表面に複数の略円板状の基板２を周方向等間隔に配列し形成されている。基板２は、例えば炭化珪素（ＳｉＣ）等のセラミックス材料からなり、その表面には略格子状に配列された複数の台座部３が基板２の一部として一体に形成される。 As shown in FIGS. 1 and 2, a conditioner 10 for a semiconductor polishing cloth according to an example of this embodiment has a plurality of substantially disk-shaped substrates 2 circumferentially arranged on the surface of a base 1 made of substantially ring-shaped stainless steel or the like. They are arranged at equal intervals. The substrate 2 is made of, for example, a ceramic material such as silicon carbide (SiC), and a plurality of pedestal portions 3 arranged in a substantially lattice shape are integrally formed as a part of the substrate 2 on the surface thereof.

また、本実施形態の他の例の半導体研磨布用コンディショナー２０は、図３に示すように、略円板状のステンレス等からなる台金１１の表面に略円板状の基板１２を配設し形成されている。基板１２は、例えばＳｉＣ等のセラミックス材料からなり、その表面の外周近傍に複数の台座部３を周方向等間隔に配列している。また台座部３は、基板１２の径方向にも複数並べられている。詳しくは、図３において、台座部３は周方向均等に６０ヶ配列されるとともに径方向にも３列が並べられており、また径方向に隣り合う台座部３同士は千鳥状に並べられている。
また、これら半導体研磨布用コンディショナー１０，２０の台座部３は、以降説明するように共通の構成からなる。 In addition, as shown in FIG. 3, a conditioner 20 for a semiconductor polishing cloth according to another example of the present embodiment has a substantially disc-shaped substrate 12 disposed on the surface of a base 11 made of substantially disc-shaped stainless steel or the like. Is formed. The substrate 12 is made of, for example, a ceramic material such as SiC, and a plurality of pedestal portions 3 are arranged at equal intervals in the circumferential direction in the vicinity of the outer periphery of the surface. A plurality of pedestal portions 3 are also arranged in the radial direction of the substrate 12. Specifically, in FIG. 3, the pedestal portions 3 are equally arranged in the circumferential direction, and three rows are arranged in the radial direction, and the pedestal portions 3 adjacent in the radial direction are arranged in a staggered manner. Yes.
Moreover, the base part 3 of these conditioners 10 and 20 for semiconductor polishing cloths has a common configuration as described below.

図４に示すように、本実施形態の半導体研磨布用コンディショナー１０，２０の台座部３は、略円板状に形成されている。台座部３は、その軸線方向（図４における上下方向）の基端側（図４における下側）から先端側（図４における上側）に向かうに連れその外径寸法が漸次縮小して形成されており、台座部３の先端側の表面すなわち基板２，１２の表面には略格子状に配列された複数の切刃４（１４）が一体に形成されている。 As shown in FIG. 4, the pedestal 3 of the semiconductor polishing cloth conditioners 10 and 20 of the present embodiment is formed in a substantially disc shape. The pedestal portion 3 is formed such that its outer diameter dimension gradually decreases from the base end side (lower side in FIG. 4) in the axial direction (vertical direction in FIG. 4) to the distal end side (upper side in FIG. 4). A plurality of cutting blades 4 (14) arranged in a substantially lattice pattern are integrally formed on the surface of the base portion 3 on the front end side, that is, the surfaces of the substrates 2 and 12.

図５に示すように、基板２，１２の台座部３の表面に配列された切刃４は、台座部３の表面から突出して略直方体状又は略立方体状に形成されている。また切刃４は、台座部３の表面と略平行に形成された頂面５と、頂面５に直交して周囲に形成され、該頂面５及び台座部３の表面を繋ぐ複数の壁面６とを備えている。 As shown in FIG. 5, the cutting blades 4 arranged on the surface of the pedestal portion 3 of the substrates 2 and 12 protrude from the surface of the pedestal portion 3 and are formed in a substantially rectangular parallelepiped shape or a substantially cubic shape. The cutting edge 4 has a top surface 5 formed substantially parallel to the surface of the pedestal portion 3, and a plurality of wall surfaces formed around the surface orthogonal to the top surface 5 and connecting the top surface 5 and the surface of the pedestal portion 3. 6 is provided.

また、切刃４の頂面５は、膜状の第１ダイヤモンド膜７に覆われている。第１ダイヤモンド膜７は、化学気相蒸着（ＣＶＤ）法により切刃４の頂面５に蒸着され形成されており、この頂面５上にのみ、すなわち頂面５と壁面６との交差稜線部に縁部を有するように形成されている。また、第１ダイヤモンド膜７の表面７ａは、頂面５と略平行に形成されており、表面７ａの周囲には、該表面７ａに略直交するように複数の側面７ｂが形成される。また、第１ダイヤモンド膜７のこれら側面７ｂは切刃４の壁面６に連続するように面一に形成されている。 The top surface 5 of the cutting edge 4 is covered with a film-like first diamond film 7. The first diamond film 7 is formed by vapor deposition on the top surface 5 of the cutting edge 4 by a chemical vapor deposition (CVD) method. Only the top surface 5, that is, the intersecting ridge line between the top surface 5 and the wall surface 6. The part is formed to have an edge. The surface 7a of the first diamond film 7 is formed substantially parallel to the top surface 5, and a plurality of side surfaces 7b are formed around the surface 7a so as to be substantially orthogonal to the surface 7a. Further, these side surfaces 7 b of the first diamond film 7 are formed to be flush with the wall surface 6 of the cutting edge 4.

また、第１ダイヤモンド膜７の表面７ａ及び側面７ｂ、切刃４の壁面６、台座部３及び基板２，１２の表面は第２ダイヤモンド膜８で覆われている。第２ダイヤモンド膜８は、ＣＶＤ法により蒸着され形成されている。また、第２ダイヤモンド膜８の厚みＴｂは、第１ダイヤモンド膜７の厚みＴａ以下とされている。詳しくは、第２ダイヤモンド膜８の厚みＴｂは０．１μｍ〜１０μｍの範囲に設定されており、切刃４の頂面５を覆う第１、第２ダイヤモンド膜７，８の厚み（Ｔａ＋Ｔｂ）が、２０μｍ程度に設定される。 Further, the surface 7 a and the side surface 7 b of the first diamond film 7, the wall surface 6 of the cutting edge 4, the pedestal 3, and the surfaces of the substrates 2 and 12 are covered with the second diamond film 8. The second diamond film 8 is deposited by CVD. Further, the thickness Tb of the second diamond film 8 is set to be equal to or less than the thickness Ta of the first diamond film 7. Specifically, the thickness Tb of the second diamond film 8 is set in the range of 0.1 μm to 10 μm, and the thickness (Ta + Tb) of the first and second diamond films 7 and 8 covering the top surface 5 of the cutting edge 4 is set. , About 20 μm.

また、切刃４の壁面６が第２ダイヤモンド膜８のみで被覆されることから、切刃４の外形幅Ｗは、切刃４の壁面６，６間の幅Ｗ１と第２ダイヤモンド膜８の厚みＴｂの２倍数とを足した値とされている。詳しくは、幅Ｗ１が３０μｍ程度、外形幅Ｗが３０．２μｍ〜５０μｍ程度の範囲に設定される。
また、切刃４の外形高さＨは、５０μｍ程度に設定される。 Further, since the wall surface 6 of the cutting edge 4 is covered only with the second diamond film 8, the outer width W of the cutting edge 4 is equal to the width W1 between the wall surfaces 6 and 6 of the cutting edge 4 and the second diamond film 8. It is a value obtained by adding twice the thickness Tb. Specifically, the width W1 is set to about 30 μm and the outer width W is set to a range of about 30.2 μm to 50 μm.
The outer height H of the cutting edge 4 is set to about 50 μm.

また、図５に示した略直方体状又は略立方体状の切刃４に代えて、図６に示すように、台座部３の表面に対し傾斜して形成された頂面１５と、頂面１５に交差して周囲に形成され該頂面１５及び台座部３の表面を繋ぐ複数の壁面１６とを備えた切刃１４としてもよい。切刃１４の壁面１６は、台座部３の表面に対し略直交して形成される。また、切刃１４の壁面１６のうち、台座部３の表面から突出して最も長く延びる壁面１６ａと頂面１５とが成す角度θＡは、鋭角に形成されており、例えばその角度θＡが４５°に設定される。 Further, in place of the substantially rectangular parallelepiped or substantially cubic cutting edge 4 shown in FIG. 5, as shown in FIG. 6, a top surface 15 formed to be inclined with respect to the surface of the pedestal portion 3, and the top surface 15 It is good also as the cutting blade 14 provided with the some wall surface 16 which cross | intersects and is formed in the circumference | surroundings and connects the surface of this top surface 15 and the base part 3. FIG. The wall surface 16 of the cutting blade 14 is formed substantially orthogonal to the surface of the pedestal portion 3. Further, among the wall surfaces 16 of the cutting blade 14, the angle θA formed by the longest wall surface 16a that protrudes from the surface of the pedestal portion 3 and the top surface 15 is formed as an acute angle. For example, the angle θA is 45 °. Is set.

また、切刃１４の頂面１５は、膜状の第１ダイヤモンド膜１７に覆われている。第１ダイヤモンド膜１７は、ＣＶＤ法により切刃１４の頂面１５に蒸着され形成されており、この頂面１５上にのみ、すなわち頂面１５と壁面１６との交差稜線部に縁部を有するように形成されている。また、第１ダイヤモンド膜１７の表面１７ａは、頂面１５と略平行に形成されており、表面１７ａの周囲には、該表面１７ａに交差するように複数の側面１７ｂが形成される。また、第１ダイヤモンド膜１７のこれら側面１７ｂは切刃１４の壁面１６に連続するように面一に形成されている。 The top surface 15 of the cutting edge 14 is covered with a film-like first diamond film 17. The first diamond film 17 is formed by vapor deposition on the top surface 15 of the cutting edge 14 by a CVD method, and has an edge only on the top surface 15, that is, at the intersecting ridge line portion between the top surface 15 and the wall surface 16. It is formed as follows. The surface 17a of the first diamond film 17 is formed substantially parallel to the top surface 15, and a plurality of side surfaces 17b are formed around the surface 17a so as to intersect the surface 17a. Further, these side surfaces 17 b of the first diamond film 17 are formed flush with each other so as to be continuous with the wall surface 16 of the cutting edge 14.

また、第１ダイヤモンド膜１７の表面１７ａ及び側面１７ｂ、切刃１４の壁面１６、台座部３及び基板２，１２の表面は第２ダイヤモンド膜１８で覆われている。第２ダイヤモンド膜１８は、ＣＶＤ法により蒸着され形成されている。また、第２ダイヤモンド膜１８の厚みＴｄは、第１ダイヤモンド膜１７の厚みＴｃ以下とされている。詳しくは、第２ダイヤモンド膜１８の厚みＴｄは０．１μｍ〜１０μｍの範囲に設定されており、切刃１４の頂面１５を覆う第１、第２ダイヤモンド膜１７，１８の厚み（Ｔｃ＋Ｔｄ）が、２０μｍ程度に設定される。 Further, the surface 17 a and the side surface 17 b of the first diamond film 17, the wall surface 16 of the cutting edge 14, the pedestal 3, and the surfaces of the substrates 2 and 12 are covered with the second diamond film 18. The second diamond film 18 is deposited by CVD. Further, the thickness Td of the second diamond film 18 is set to be equal to or less than the thickness Tc of the first diamond film 17. Specifically, the thickness Td of the second diamond film 18 is set in a range of 0.1 μm to 10 μm, and the thickness (Tc + Td) of the first and second diamond films 17 and 18 covering the top surface 15 of the cutting edge 14 is set. , About 20 μm.

また、切刃１４の壁面１６が第２ダイヤモンド膜１８のみで被覆されることから、切刃１４の外形幅Ｗは、切刃１４の壁面１６，１６ａ（１６）間の幅Ｗ１と第２ダイヤモンド膜１８の厚みＴｄの２倍数とを足した値とされている。詳しくは、幅Ｗ１が３０μｍ程度、外形幅Ｗが３０．２μｍ〜５０μｍ程度の範囲に設定される。
また、切刃１４の外形高さＨは、５０μｍ程度に設定される。 Further, since the wall surface 16 of the cutting edge 14 is covered only with the second diamond film 18, the outer width W of the cutting edge 14 is equal to the width W1 between the wall surfaces 16 and 16a (16) of the cutting edge 14 and the second diamond. It is a value obtained by adding twice the thickness Td of the film 18. Specifically, the width W1 is set to about 30 μm and the outer width W is set to a range of about 30.2 μm to 50 μm.
The outer height H of the cutting blade 14 is set to about 50 μm.

また、第１ダイヤモンド膜１７を覆う第２ダイヤモンド膜１８の表面（頂面）１８ａと切刃１４の壁面１６ａを覆う側面１８ｂとが成す角度θＢは、鋭角に形成されており、例えばその角度θＢが４５°に設定され、前述の角度θＡと同一の値とされている。切刃１４の角度θＢを成すエッジは、後述するパッド５４側に向けられて突出しており、該パッド５４の研削加工に用いられ好適な形状とされている。 The angle θB formed by the surface (top surface) 18a of the second diamond film 18 covering the first diamond film 17 and the side surface 18b covering the wall surface 16a of the cutting blade 14 is formed at an acute angle, for example, the angle θB Is set to 45 °, which is the same value as the angle θA described above. An edge forming an angle θB of the cutting blade 14 protrudes toward the pad 54 described later, and has a suitable shape used for grinding the pad 54.

次に、基板２，１２の台座部３の表面に切刃４（１４）を形成する手順について説明する。
まず、切刃４を形成する手順について説明する。
図７（ａ）に示すように、台座部３及び基板２，１２の表面に第１ダイヤモンド膜７を、ＣＶＤ法を用いて蒸着する。第１ダイヤモンド膜７を成膜する厚みＴａは、後に切刃４の頂面５を覆う第１、第２ダイヤモンド膜７，８の厚みの和（Ｔａ＋Ｔｂ）から第２ダイヤモンド膜８の厚みＴｂを予め差し引いた値に設定されている。 Next, a procedure for forming the cutting edge 4 (14) on the surface of the base 3 of the substrates 2 and 12 will be described.
First, the procedure for forming the cutting edge 4 will be described.
As shown in FIG. 7A, a first diamond film 7 is deposited on the surfaces of the pedestal 3 and the substrates 2 and 12 by using the CVD method. The thickness Ta for forming the first diamond film 7 is the thickness Tb of the second diamond film 8 from the sum (Ta + Tb) of the first and second diamond films 7 and 8 that later cover the top surface 5 of the cutting edge 4. It is set to a value subtracted in advance.

次いで、レーザ加工を用いて、台座部３の第１ダイヤモンド膜７側から図７（ｂ）に２点鎖線で区画して示す第１ダイヤモンド膜７及び台座部３の表面の領域を削り、図７（ｃ）に示す切刃４を形成する。すなわち、切刃４が台座部３の表面から略直方体状又は略立方体状に突出するように該切刃４以外の領域の第１ダイヤモンド膜７及び台座部３の表面をレーザ加工で削り込む。このレーザ加工により、第１ダイヤモンド膜７の表面７ａと側面７ｂとが略直交して形成されるとともに、側面７ｂと壁面６とが連続するように面一に形成される。 Next, by using laser processing, the first diamond film 7 and the surface area of the pedestal portion 3 shown by the two-dot chain line shown in FIG. 7B from the first diamond film 7 side of the pedestal portion 3 are shaved. The cutting edge 4 shown in 7 (c) is formed. That is, the surface of the first diamond film 7 and the pedestal portion 3 other than the cutting blade 4 is shaved by laser processing so that the cutting edge 4 protrudes from the surface of the pedestal portion 3 into a substantially rectangular parallelepiped shape or a substantially cubic shape. By this laser processing, the surface 7a and the side surface 7b of the first diamond film 7 are formed substantially orthogonal to each other, and the side surface 7b and the wall surface 6 are formed to be flush with each other.

次いで、図７（ｄ）に示すように、第１ダイヤモンド膜７の表面７ａ及び側面７ｂ、切刃４の壁面６、台座部３及び基板２，１２の表面に第２ダイヤモンド膜８をＣＶＤ法で蒸着し、切刃４、台座部３及び基板２，１２の表面全体を第２ダイヤモンド膜８で被覆する。
このように、基板２，１２の台座部３の表面に第１、第２ダイヤモンド膜７，８で覆われた切刃４が形成される。 Next, as shown in FIG. 7 (d), the second diamond film 8 is formed on the surface of the first diamond film 7 on the surface 7 a and the side surface 7 b, the wall surface 6 of the cutting edge 4, the pedestal 3, and the surfaces of the substrates 2 and 12 by the CVD method. The entire surface of the cutting blade 4, the pedestal 3, and the substrates 2 and 12 is covered with the second diamond film 8.
Thus, the cutting edge 4 covered with the first and second diamond films 7 and 8 is formed on the surface of the base portion 3 of the substrates 2 and 12.

次に、切刃１４を形成する手順について説明する。
まず、図８（ａ）に示すように、基板２，１２の台座部３の表面に、該表面に沿って延在する溝（凹部）１５Ａを形成する。溝１５Ａは、その延在方向に直交する断面形状が、片辺を鉛直方向に延ばした略Ｖ字状とされており、他の辺に沿う溝１５Ａの底面１５は台座部３の表面に対し傾斜して形成される。 Next, a procedure for forming the cutting blade 14 will be described.
First, as shown in FIG. 8A, grooves (concave portions) 15 A extending along the surfaces are formed on the surfaces of the base portions 3 of the substrates 2 and 12. The groove 15 A has a substantially V-shaped cross-section perpendicular to the extending direction, with one side extending in the vertical direction, and the bottom surface 15 of the groove 15 A along the other side is with respect to the surface of the pedestal portion 3. Inclined.

次いで、溝１５Ａ、台座部３及び基板２，１２の表面に第１ダイヤモンド膜１７を、ＣＶＤ法を用いて蒸着する。第１ダイヤモンド膜１７を成膜する厚みＴｃは、後に切刃１４の頂面（溝１５Ａの底面）１５を覆う第１、第２ダイヤモンド膜１７，１８の厚みの和（Ｔｃ＋Ｔｄ）から第２ダイヤモンド膜１８の厚みＴｄを予め差し引いた値に設定されている。 Next, the first diamond film 17 is deposited on the surfaces of the groove 15A, the pedestal 3 and the substrates 2 and 12 by using the CVD method. The thickness Tc for forming the first diamond film 17 is determined from the sum (Tc + Td) of the thicknesses of the first and second diamond films 17 and 18 that later cover the top surface 15 (bottom surface of the groove 15A) 15 of the cutting blade 14. The thickness Td of the film 18 is set to a value obtained by subtracting in advance.

次いで、レーザ加工を用いて、台座部３の第１ダイヤモンド膜１７側から図８（ｂ）に２点鎖線で区画して示す第１ダイヤモンド膜１７及び台座部３の表面の領域を削り、図８（ｃ）に示す切刃１４を形成する。すなわち、切刃１４が台座部３の表面から底面１５及びその上の第１ダイヤモンド膜１７を除いて略直方体状に突出するように該切刃１４以外の領域の第１ダイヤモンド膜１７及び台座部３の表面をレーザ加工で削り込む。このレーザ加工により、第１ダイヤモンド膜１７の表面１７ａと側面１７ｂとが交差して形成されるとともに、側面１７ｂと壁面１６とが連続するように面一に形成される。また、溝１５Ａの底面１５は、切刃１４の頂面１５とされる。 Next, by using laser processing, the first diamond film 17 and the surface area of the pedestal portion 3 shown by the two-dot chain line shown in FIG. 8B from the first diamond film 17 side of the pedestal portion 3 are shaved. A cutting edge 14 shown in FIG. 8C is formed. That is, the first diamond film 17 and the pedestal portion in a region other than the cutting edge 14 so that the cutting edge 14 protrudes from the surface of the pedestal portion 3 in a substantially rectangular parallelepiped shape except for the bottom surface 15 and the first diamond film 17 thereon. The surface of 3 is cut by laser processing. By this laser processing, the surface 17a and the side surface 17b of the first diamond film 17 are formed to intersect with each other, and the side surface 17b and the wall surface 16 are formed to be flush with each other. Further, the bottom surface 15 of the groove 15 A is the top surface 15 of the cutting edge 14.

次いで、図８（ｄ）に示すように、第１ダイヤモンド膜１７の表面１７ａ及び側面１７ｂ、切刃１４の壁面１６、台座部３及び基板２，１２の表面に第２ダイヤモンド膜１８をＣＶＤ法で蒸着し、切刃１４、台座部３及び基板２，１２の表面全体を第２ダイヤモンド膜１８で被覆する。
このように、基板２，１２の台座部３の表面に第１、第２ダイヤモンド膜１７，１８で覆われた切刃１４が形成される。 Next, as shown in FIG. 8D, the second diamond film 18 is formed on the surfaces 17a and 17b of the first diamond film 17, the wall surface 16 of the cutting edge 14, the pedestal 3 and the surfaces of the substrates 2 and 12 by the CVD method. The entire surface of the cutting blade 14, the pedestal 3 and the substrates 2 and 12 is covered with the second diamond film 18.
Thus, the cutting edge 14 covered with the first and second diamond films 17 and 18 is formed on the surface of the base 3 of the substrates 2 and 12.

尚、本実施形態では、基板２，１２の台座部３の表面に形成される切刃４（１４）の頂面５（１５）に２層からなるダイヤモンド膜（第１、第２ダイヤモンド膜７，８（１７，１８））が形成されることとして説明したが、これに限定されるものではない。
すなわち、第１ダイヤモンド膜７（１７）を複数のダイヤモンド膜を積層し形成するとともに、切刃４（１４）を覆うダイヤモンド膜を３層以上で構成することとしてもよい。さらに、第１ダイヤモンド膜７（１７）の前述の複数のダイヤモンド膜を、互いに硬度や表面粗さ等の性質の異なる膜で形成しても構わない。 In the present embodiment, the diamond film (first and second diamond films 7) is composed of two layers on the top surface 5 (15) of the cutting edge 4 (14) formed on the surface of the base 3 of the substrates 2 and 12. , 8 (17, 18)) is formed, but is not limited to this.
That is, the first diamond film 7 (17) may be formed by laminating a plurality of diamond films, and the diamond film covering the cutting edge 4 (14) may be composed of three or more layers. Further, the plurality of diamond films of the first diamond film 7 (17) may be formed of films having different properties such as hardness and surface roughness.

次に、切刃を３層以上のダイヤモンド膜で被覆する手順について説明する。
まず、図９（ａ）に示すように、台座部３及び基板２，１２の表面にダイヤモンド膜２７Ａを、ＣＶＤ法を用いて蒸着する。
次いで、図９（ｂ）に示すように、ダイヤモンド膜２７Ａの表面にダイヤモンド膜２７Ｂを、ＣＶＤ法を用いて蒸着する。 Next, the procedure for coating the cutting edge with three or more diamond films will be described.
First, as shown in FIG. 9A, a diamond film 27A is deposited on the surfaces of the pedestal portion 3 and the substrates 2 and 12 using a CVD method.
Next, as shown in FIG. 9B, a diamond film 27B is deposited on the surface of the diamond film 27A using a CVD method.

各ダイヤモンド膜２７Ａ，２７Ｂは、互いに膜厚が異なるとともに硬度、表面粗さが異なって設定される。このようにダイヤモンド膜２７Ａ，２７Ｂが積層され、第１ダイヤモンド膜２７が形成されている。尚、第１ダイヤモンド膜２７は、ダイヤモンド膜２７Ａ，２７Ｂにさらに別のダイヤモンド膜２７Ａ，２７Ｂ以外のダイヤモンド膜を積層させて、３層以上で形成しても構わない。
また、第１ダイヤモンド膜２７を成膜する厚みＴｅは、後述する切刃２４の頂面５を覆う第１、第２ダイヤモンド膜２７，２８の厚みの和（Ｔｅ＋Ｔｆ）から第２ダイヤモンド膜２８の厚みＴｆを予め差し引いた値に設定されている。 The diamond films 27A and 27B are set to have different thicknesses and different hardness and surface roughness. Thus, the diamond films 27A and 27B are laminated to form the first diamond film 27. The first diamond film 27 may be formed of three or more layers by further laminating a diamond film other than the diamond films 27A and 27B on the diamond films 27A and 27B.
Further, the thickness Te for forming the first diamond film 27 is determined from the sum (Te + Tf) of the thicknesses of the first and second diamond films 27 and 28 covering the top surface 5 of the cutting edge 24 described later. It is set to a value obtained by subtracting the thickness Tf in advance.

次いで、レーザ加工を用いて、台座部３のダイヤモンド膜２７Ｂ側から図９（ｃ）に２点鎖線で区画して示す第１ダイヤモンド膜２７及び台座部３の表面の領域を削り、図９（ｄ）に示す切刃２４を形成する。すなわち、切刃２４が台座部３の表面から略直方体状又は略立方体状に突出するように該切刃２４以外の領域の第１ダイヤモンド膜２７及び台座部３の表面をレーザ加工で削り込む。このレーザ加工により、第１ダイヤモンド膜２７の表面２７ａと側面２７ｂとが交差して形成されるとともに、側面２７ｂと壁面６とが連続するように面一に形成される。 Next, by using laser processing, the first diamond film 27 and the surface area of the pedestal portion 3 shown by the two-dot chain line in FIG. 9C from the diamond film 27B side of the pedestal portion 3 are shaved. The cutting edge 24 shown in d) is formed. That is, the surface of the first diamond film 27 and the pedestal portion 3 other than the cutting blade 24 is cut by laser processing so that the cutting edge 24 protrudes from the surface of the pedestal portion 3 into a substantially rectangular parallelepiped shape or a substantially cubic shape. By this laser processing, the surface 27a and the side surface 27b of the first diamond film 27 are formed to intersect with each other, and the side surface 27b and the wall surface 6 are formed to be flush with each other.

次いで、図９（ｅ）に示すように、第１ダイヤモンド膜２７の表面２７ａ及び側面２７ｂ、切刃２４の壁面６、台座部３及び基板２，１２の表面に第２ダイヤモンド膜２８をＣＶＤ法で蒸着し、切刃２４、台座部３及び基板２，１２の表面全体を第２ダイヤモンド膜２８で被覆する。第２ダイヤモンド膜２８の厚みＴｆは、第１ダイヤモンド膜２７の厚みＴｅ以下とされている。詳しくは、第２ダイヤモンド膜２８の厚みＴｆは０．１μｍ〜１０μｍの範囲に設定されており、切刃２４の頂面５を覆う第１、第２ダイヤモンド膜２７，２８の厚み（Ｔｅ＋Ｔｆ）が、２０μｍ程度に設定される。 Next, as shown in FIG. 9E, the second diamond film 28 is formed on the surfaces 27a and 27b of the first diamond film 27, the wall surface 6 of the cutting edge 24, the pedestal 3 and the surfaces of the substrates 2 and 12 by the CVD method. The entire surface of the cutting edge 24, the pedestal 3 and the substrates 2 and 12 is covered with the second diamond film 28. The thickness Tf of the second diamond film 28 is set to be equal to or less than the thickness Te of the first diamond film 27. Specifically, the thickness Tf of the second diamond film 28 is set in a range of 0.1 μm to 10 μm, and the thickness (Te + Tf) of the first and second diamond films 27 and 28 covering the top surface 5 of the cutting edge 24 is set. , About 20 μm.

このように、基板２，１２の台座部３の表面に複層からなる第１ダイヤモンド膜２７及び単層からなる第２ダイヤモンド膜２８で覆われた切刃２４が形成される。
尚、切刃２４の形状は、前述の切刃１４のように、その頂面が台座部３の表面に対し傾斜して形成されていても構わない。 In this way, the cutting edge 24 covered with the first diamond film 27 composed of a plurality of layers and the second diamond film 28 composed of a single layer is formed on the surface of the base 3 of the substrates 2 and 12.
Note that the shape of the cutting edge 24 may be formed such that the top surface thereof is inclined with respect to the surface of the pedestal portion 3 as in the case of the cutting edge 14 described above.

次いで、本実施形態の半導体研磨布用コンディショナー１０，２０を用いた半導体研磨装置５０について説明する。
この半導体研磨装置５０は、シリコンインゴットから切り出した半導体ウエハ（以下「ウエハ」と省略する）Ｐの表面を化学的且つ機械的に研磨するものである。 Next, a semiconductor polishing apparatus 50 using the semiconductor polishing cloth conditioners 10 and 20 of this embodiment will be described.
The semiconductor polishing apparatus 50 chemically and mechanically polishes the surface of a semiconductor wafer (hereinafter abbreviated as “wafer”) P cut out from a silicon ingot.

図１０に示すように、半導体研磨装置５０は、中心軸５２に取り付けられた円板状の回転テーブル５３上に例えば硬質ウレタンからなるポリッシング用のパッド（半導体研磨布）５４が設けられ、このパッド５４に対向して且つパッド５４の中心軸５２から偏心した位置に自転可能なウエハキャリア５５が配設されている。このウエハキャリア５５はパッド５４よりも小径の円板形状とされてウエハＰを保持するものであり、このウエハＰがウエハキャリア５５とパッド５４間に配置されてパッド５４側の表面の研磨に供され鏡面仕上げされる。 As shown in FIG. 10, the semiconductor polishing apparatus 50 is provided with a polishing pad (semiconductor polishing cloth) 54 made of, for example, hard urethane on a disk-shaped rotary table 53 attached to a central shaft 52. A wafer carrier 55 that can rotate is disposed at a position opposite to the center axis 54 and eccentric from the central axis 52 of the pad 54. The wafer carrier 55 has a disk shape smaller in diameter than the pad 54 and holds the wafer P. The wafer P is disposed between the wafer carrier 55 and the pad 54 and used for polishing the surface on the pad 54 side. And mirror finished.

研磨に際しては、例えば微粒子シリカ等からなる遊離砥粒が研磨剤として用いられ、更にエッチング用のアルカリ液等が混合されたもの又は酸液等が混合されたものが液状のスラリＳとしてパッド５４上に供給される。このスラリＳは、ウエハキャリア５５に保持されたウエハＰとパッド５４との間に流動する。そして、ウエハキャリア５５でウエハＰが自転するとともにパッド５４が中心軸５２を中心として回転するために、パッド５４でウエハＰの一面が研磨される。 At the time of polishing, for example, free abrasive grains made of fine particle silica or the like are used as an abrasive, and further mixed with an alkali solution for etching or mixed with an acid solution or the like as a liquid slurry S on the pad 54. To be supplied. This slurry S flows between the wafer P held by the wafer carrier 55 and the pad 54. Then, since the wafer P is rotated by the wafer carrier 55 and the pad 54 is rotated about the central axis 52, one surface of the wafer P is polished by the pad 54.

ウエハＰの研磨を行うパッド５４上にはスラリＳを保持する微細な凹部（不図示）が多数設けられており、これらの凹部内に保持されたスラリＳを用いてウエハＰの研磨が行われる。パッド５４の凹部は、ウエハＰの研磨を繰り返すことで目詰まりしたり該凹部の周囲が削られ充分な深さが確保できなくなったりしてスラリＳの保持性能が低減するため、半導体研磨装置５０では、半導体研磨布用コンディショナー１０，２０を用いてパッド５４の表面を研削加工するようにしている。 A large number of fine recesses (not shown) for holding the slurry S are provided on the pad 54 for polishing the wafer P, and the wafer P is polished using the slurry S held in these recesses. . The concave portion of the pad 54 is clogged by repeating the polishing of the wafer P or the periphery of the concave portion is shaved and a sufficient depth cannot be secured, so that the holding performance of the slurry S is reduced. Then, the surface of the pad 54 is ground using the conditioners 10 and 20 for semiconductor polishing cloth.

半導体研磨布用コンディショナー１０，２０は、パッド５４に対向して且つパッド５４の中心軸５２から偏心した位置に配設されている。また、半導体研磨布用コンディショナー１０，２０のパッド５４に対向する表面には、前述の切刃４（１４，２４）が設けられている。
半導体研磨布用コンディショナー１０，２０は、回転テーブル５３の外部に設けられた回転軸５６にアーム５７を介して自転可能に設けられており、回転軸５６によりアーム５７を回動させることで、回転するパッド５４上において自転しながら該パッド５４の略径方向に往復揺動させられて、パッド５４の表面を研削加工する。 The semiconductor polishing cloth conditioners 10 and 20 are disposed opposite to the pad 54 and at a position eccentric from the central axis 52 of the pad 54. Moreover, the above-mentioned cutting blade 4 (14, 24) is provided in the surface facing the pad 54 of the conditioner 10 for semiconductor polishing cloths.
The semiconductor polishing cloth conditioners 10 and 20 are provided on a rotary shaft 56 provided outside the rotary table 53 so as to be able to rotate via an arm 57. The arm 57 is rotated by the rotary shaft 56 to rotate. The surface of the pad 54 is ground by being reciprocally swung in the substantially radial direction of the pad 54 while rotating on the pad 54 to be rotated.

以上説明したように、本実施形態に係る半導体研磨布用コンディショナー１０，２０によれば、切刃４（１４，２４）の頂面５（１５）が第１ダイヤモンド膜７（１７，２７）に覆われており、この第１ダイヤモンド膜７（１７，２７）は、その縁部が頂面５（１５）と壁面６（１６）との交差稜線部に位置していて、すなわち切刃４（１４，２４）の壁面６（１６）に連続するようにされている。そして、この第１ダイヤモンド膜７（１７，２７）の表面７ａ（１７ａ，２７ａ）にはさらに第２ダイヤモンド膜８（１８，２８）が被覆されており、これら第１、第２ダイヤモンド膜７（１７，２７），８（１８，２８）によって、切刃寿命を左右するその頂面５（１５）を覆うダイヤモンド膜の厚み（Ｔａ＋Ｔｂ）（Ｔｃ＋Ｔｄ，Ｔｅ＋Ｔｆ）が充分に確保されている。その一方で、切刃４（１４，２４）のエッジは第１ダイヤモンド膜７（１７，２７）の表面７ａ（１７ａ，２７ａ）の壁面６（１６）の延長上に位置することになり、このエッジは、ダイヤモンド膜全体の厚みよりは薄く形成されるから、切刃４（１４，２４）がシャープエッジに形成される。従って、切刃４（１４，２４）の磨耗が確実に防止され、工具寿命が長期に亘り安定して確保されるとともに、切刃４（１４，２４）の研削性能が向上する。 As described above, according to the semiconductor polishing cloth conditioners 10 and 20 according to this embodiment, the top surface 5 (15) of the cutting edge 4 (14, 24) is formed on the first diamond film 7 (17, 27). The edge of the first diamond film 7 (17, 27) is located at the intersection ridgeline between the top surface 5 (15) and the wall surface 6 (16), that is, the cutting edge 4 ( 14, 24) to be continuous with the wall surface 6 (16). The surface 7a (17a, 27a) of the first diamond film 7 (17, 27) is further covered with a second diamond film 8 (18, 28). These first and second diamond films 7 ( 17, 27) and 8 (18, 28) ensure a sufficient thickness (Ta + Tb) (Tc + Td, Te + Tf) of the diamond film covering the top surface 5 (15) that affects the cutting edge life. On the other hand, the edge of the cutting edge 4 (14, 24) is located on the extension of the wall surface 6 (16) of the surface 7a (17a, 27a) of the first diamond film 7 (17, 27). Since the edge is formed thinner than the entire thickness of the diamond film, the cutting edge 4 (14, 24) is formed as a sharp edge. Therefore, the wear of the cutting edge 4 (14, 24) is reliably prevented, the tool life is stably ensured for a long time, and the grinding performance of the cutting edge 4 (14, 24) is improved.

また、第２ダイヤモンド膜８（１８，２８）の厚みＴｂ（Ｔｄ，Ｔｆ）が、第１ダイヤモンド膜７（１７，２７）の厚みＴａ（Ｔｃ，Ｔｅ）以下に設定されていることから、切刃４（１４，２４）を一層シャープエッジに形成でき、研削性能がより向上する。 Further, the thickness Tb (Td, Tf) of the second diamond film 8 (18, 28) is set to be equal to or less than the thickness Ta (Tc, Te) of the first diamond film 7 (17, 27). The blade 4 (14, 24) can be formed with a sharper edge, and the grinding performance is further improved.

また、第２ダイヤモンド膜８（１８，２８）の厚みＴｂ（Ｔｄ，Ｔｆ）が、０．１μｍ〜１０μｍの範囲に設定されることから、切刃４（１４，２４）の研削性能がさらに充分に確保される。 Further, since the thickness Tb (Td, Tf) of the second diamond film 8 (18, 28) is set in the range of 0.1 μm to 10 μm, the grinding performance of the cutting edge 4 (14, 24) is further sufficient. Secured.

また、切刃４（１４，２４）の壁面６（１６）が第２ダイヤモンド膜８（１８，２８）のみで被覆されることから、切刃４（１４，２４）の外形幅Ｗが抑制される。すなわち、従来のように、切刃４（１４，２４）の頂面５（１５）及び壁面６（１６）全体を単一層からなる略均一な厚みのダイヤモンド膜で被覆した場合に比べ、切刃４（１４，２４）の壁面６（１６）を覆うダイヤモンド膜の厚みが低減されるので、切刃４（１４，２４）の外形幅Ｗが省スペースに形成される。従って、切刃４（１４，２４）を複数設ける場合に、これら切刃４（１４，２４）の配置間隔をパッド５４に対して適正な間隔に維持したまま切刃４（１４，２４）の数量を増大でき、パッド５４の研削性能がより向上する。 Moreover, since the wall surface 6 (16) of the cutting edge 4 (14, 24) is covered only with the second diamond film 8 (18, 28), the outer width W of the cutting edge 4 (14, 24) is suppressed. The That is, as compared with the conventional case, the cutting edge 4 (14, 24) has a cutting edge as compared with the case where the entire top surface 5 (15) and the wall surface 6 (16) are covered with a diamond film having a substantially uniform thickness. Since the thickness of the diamond film covering the wall surface 6 (16) of 4 (14, 24) is reduced, the outer width W of the cutting edge 4 (14, 24) is formed in a space-saving manner. Accordingly, when a plurality of cutting blades 4 (14, 24) are provided, the cutting blades 4 (14, 24) are maintained at an appropriate interval with respect to the pad 54 while the arrangement interval of these cutting blades 4 (14, 24) is maintained. The quantity can be increased, and the grinding performance of the pad 54 is further improved.

また、切刃１４のように頂面１５を基板２，１２の台座部３の表面に対し傾斜させることで、切刃１４のパッド５４側に突出するエッジがよりシャープに形成されるので、パッド５４を研削加工する性能がさらに向上する。 Further, by inclining the top surface 15 with respect to the surface of the base portion 3 of the substrates 2 and 12 like the cutting edge 14, the edge protruding toward the pad 54 side of the cutting edge 14 is formed more sharply. The performance of grinding 54 is further improved.

また、第１ダイヤモンド膜２７のように、複数の膜を積層して該第１ダイヤモンド膜２７を形成することで、これら各膜を硬度や表面粗さ等の性質の異なる種々のダイヤモンド膜２７Ａ，２７Ｂで構成することができる。従って、第１ダイヤモンド膜２７を目的に合わせ様々に形成することができ、半導体研磨布用コンディショナー１０，２０に対する多種多様な要望、用途に対応できる。 In addition, as the first diamond film 27, a plurality of films are laminated to form the first diamond film 27, so that each of these films has various diamond films 27A with different properties such as hardness and surface roughness. 27B. Accordingly, the first diamond film 27 can be formed in various ways according to the purpose, and can meet various demands and uses for the semiconductor polishing cloth conditioners 10 and 20.

また、本実施形態の半導体研磨装置５０は、前述の半導体研磨布用コンディショナー１０，２０を用いているので、該半導体研磨布用コンディショナー１０，２０がパッド５４を長期に亘り安定して精度よく研削加工する。従って、パッド５４によるウエハＰの研磨の加工精度が向上し、またパッド５４の交換作業が低減するので生産性が高められている。 Further, since the semiconductor polishing apparatus 50 of the present embodiment uses the semiconductor polishing cloth conditioners 10 and 20 described above, the semiconductor polishing cloth conditioners 10 and 20 can stably and accurately grind the pad 54 over a long period of time. Process. Accordingly, the processing accuracy of polishing the wafer P by the pad 54 is improved, and the replacement work of the pad 54 is reduced, so that productivity is increased.

また、本実施形態の半導体研磨布用コンディショナー１０，２０の製造方法によれば、台座部３及び基板２，１２の表面に第１ダイヤモンド膜７（１７，２７）を形成した後、第１ダイヤモンド膜７（１７，２７）及び台座部３の表面を削って切刃４（１４，２４）を形成させ、切刃４（１４，２４）、台座部３及び基板２，１２の表面を第２ダイヤモンド膜８（１８，２８）のみで覆うため、例えば初めに台座部３の表面に切刃４（１４，２４）を形成してから全体に第１ダイヤモンド膜７（１７，２７）を被覆し、次いで切刃４（１４，２４）の頂面５（１５）を除いて第１ダイヤモンド膜７（１７，２７）を除去してから第２ダイヤモンド膜８（１８，２８）を被覆したりするのに比べて容易に前記構成の半導体研磨布用コンディショナー１０，２０を製造することができる。 Moreover, according to the manufacturing method of the semiconductor polishing cloth conditioners 10 and 20 of the present embodiment, the first diamond film 7 (17, 27) is formed on the surfaces of the base 3 and the substrates 2 and 12, and then the first diamond is formed. The surfaces of the film 7 (17, 27) and the pedestal portion 3 are scraped to form the cutting edges 4 (14, 24), and the surfaces of the cutting edges 4 (14, 24), the pedestal section 3 and the substrates 2 and 12 are second. In order to cover only with the diamond film 8 (18, 28), for example, the cutting edge 4 (14, 24) is first formed on the surface of the pedestal portion 3, and then the first diamond film 7 (17, 27) is entirely covered. Then, after removing the first diamond film 7 (17, 27) except for the top surface 5 (15) of the cutting edge 4 (14, 24), the second diamond film 8 (18, 28) is coated. Compared to the condition for semiconductor polishing cloth of the above configuration easily It can be produced over 10 and 20.

また、切刃１４を有する半導体研磨布用コンディショナー１０，２０の製造方法では、台座部３の表面に、該表面に対し傾斜した底面１５を有する溝１５Ａを形成した後、第１ダイヤモンド膜１７及び台座部３の表面を削ってこの溝１５Ａの底面１５を頂面１５とした切刃１４が形成されるので、切刃１４の頂面１５が台座部３の表面に対し傾斜して形成される。従って、切刃１４のパッド５４側に突出するエッジがよりシャープに形成されて、パッド５４を研削加工する性能がより向上した半導体研磨布用コンディショナー１０，２０を製造することができる。 Further, in the method of manufacturing the semiconductor polishing cloth conditioners 10 and 20 having the cutting edge 14, after forming the groove 15A having the bottom surface 15 inclined with respect to the surface on the surface of the pedestal portion 3, the first diamond film 17 and Since the cutting edge 14 having the bottom surface 15 of the groove 15 A as the top surface 15 is formed by cutting the surface of the pedestal portion 3, the top surface 15 of the cutting blade 14 is formed to be inclined with respect to the surface of the pedestal portion 3. . Therefore, it is possible to manufacture the semiconductor polishing cloth conditioners 10 and 20 in which the edge protruding toward the pad 54 of the cutting edge 14 is formed more sharply and the performance of grinding the pad 54 is further improved.

尚、本発明は前述の実施形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることが可能である。
例えば、本実施形態では、第２ダイヤモンド膜８（１８，２８）の厚みＴｂ（Ｔｄ，Ｔｆ）が、第１ダイヤモンド膜７（１７，２７）の厚みＴａ（Ｔｃ，Ｔｅ）以下に設定されていることとして説明したが、これに限定されるものではなく、第２ダイヤモンド膜８（１８，２８）が、第１ダイヤモンド膜７（１７，２７）よりも厚く形成されていても構わない。 The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, in the present embodiment, the thickness Tb (Td, Tf) of the second diamond film 8 (18, 28) is set to be equal to or less than the thickness Ta (Tc, Te) of the first diamond film 7 (17, 27). However, the present invention is not limited to this, and the second diamond film 8 (18, 28) may be formed thicker than the first diamond film 7 (17, 27).

また、本実施形態では、第２ダイヤモンド膜８（１８，２８）の厚みＴｂ（Ｔｄ，Ｔｆ）が、０．１μｍ〜１０μｍの範囲に設定されることとして説明したが、これに限定されるものではなく、０．１μｍより小さい範囲や１０μｍを超えた範囲に設定されていても構わない。 In the present embodiment, the thickness Tb (Td, Tf) of the second diamond film 8 (18, 28) has been described as being set in the range of 0.1 μm to 10 μm. However, the present invention is not limited to this. Instead, it may be set to a range smaller than 0.1 μm or a range exceeding 10 μm.

また、切刃４（１４，２４）の形状は、本実施形態で説明した略直方体状や略立方体状に限定されるものではない。すなわち、切刃はパッド５４側を向く頂面と、この頂面に交差して基板２，１２の表面側に延びる壁面と、を備えていればよく、例えば略円柱状、略多角柱状、略切頭円錐状等それ以外の形状であっても構わない。また、図５、６に示した切刃４（１４，２４）等は概略図であり、実際には厳密な直方体状や立方体状に形成されずに多少変形していてもよい。 Further, the shape of the cutting edge 4 (14, 24) is not limited to the substantially rectangular parallelepiped shape or the substantially cubic shape described in the present embodiment. That is, the cutting blade only needs to have a top surface facing the pad 54 side and a wall surface that intersects the top surface and extends to the surface side of the substrates 2 and 12. Other shapes such as a truncated cone may be used. Moreover, the cutting blades 4 (14, 24) and the like shown in FIGS. 5 and 6 are schematic views, and may actually be slightly deformed without being formed into a strict rectangular parallelepiped shape or cubic shape.

また、本実施形態では、切刃１４の頂面１５は、予め基板２，１２の台座部３の表面に沿って溝１５Ａを形成し、この溝１５Ａの底面１５を用い形成することとして説明したが、これに限定されるものではない。すなわち、例えば予め基板２，１２の台座部３の表面に底面の傾斜した略直方体穴状や略円柱穴状等の凹部を形成し、この凹部の底面を用いて、切刃１４の頂面１５を形成することとしても構わない。 In the present embodiment, the top surface 15 of the cutting edge 14 is described as having a groove 15A formed in advance along the surface of the pedestal 3 of the substrates 2 and 12, and using the bottom surface 15 of the groove 15A. However, the present invention is not limited to this. That is, for example, a concave portion such as a substantially rectangular parallelepiped hole shape or a substantially cylindrical hole shape whose bottom surface is inclined is formed in advance on the surface of the pedestal portion 3 of the substrates 2 and 12, and the top surface 15 of the cutting blade 14 is formed using the bottom surface of this concave portion. May be formed.

また、本実施形態では、切刃４（１４，２４）が基板２，１２の台座部３の表面に形成されることとして説明したが、これに限定されるものではなく、基板２，１２の表面に直接形成されることとしても構わない。 In the present embodiment, the cutting edge 4 (14, 24) has been described as being formed on the surface of the pedestal 3 of the substrates 2 and 12. However, the present invention is not limited to this. It may be formed directly on the surface.

以下、本発明を実施例により具体的に説明する。ただし本発明はこの実施例に限定されるものではない。 Hereinafter, the present invention will be specifically described by way of examples. However, the present invention is not limited to this embodiment.

[実施例１]
実施例１として、半導体研磨布用コンディショナー２０の基板１２の台座部３の表面に、図６に示す切刃１４を設けたものを用意した。また、切刃１４の頂面１５を覆うダイヤモンド膜を、第１ダイヤモンド膜１７及び第２ダイヤモンド膜１８の２層で形成し、その膜厚を２０μｍに設定した。ダイヤモンド膜は、第１ダイヤモンド膜１７の厚みＴｃを１９．９μｍ、第２ダイヤモンド膜１８の厚みＴｄを０．１μｍとし、これらを積層し形成した。また切刃１４は、外形高さＨ＝５０μｍ、外形幅Ｗ＝Ｗ１＋２Ｔｄ＝３０μｍ＋０．２μｍ＝３０．２μｍ、パッド５４側に突出するエッジの角度θＢ＝４５°とした。尚、切刃１４の第１、第２ダイヤモンド膜１７，１８は、気相合成法熱フィラメント炉を用いたＣＶＤ法によって、原料ガス（流速）：Ｈ_２（１０００ｍｌ／ｍ）、ＣＨ_４（２０ｍｌ／ｍ）、チャンバー圧：８Ｔｏｒｒ、フィラメント温度：２２００℃、電圧：１８０Ｖ、合成速度：１．０μｍ／ｈの条件下で成膜した。 [Example 1]
As Example 1, what prepared the cutting blade 14 shown in FIG. 6 on the surface of the base part 3 of the board | substrate 12 of the conditioner 20 for semiconductor polishing cloths was prepared. Further, the diamond film covering the top surface 15 of the cutting edge 14 was formed of two layers of the first diamond film 17 and the second diamond film 18, and the film thickness was set to 20 μm. The diamond film was formed by laminating the first diamond film 17 with a thickness Tc of 19.9 μm and the second diamond film 18 with a thickness Td of 0.1 μm. The cutting edge 14 had an outer height H = 50 μm, an outer width W = W1 + 2Td = 30 μm + 0.2 μm = 30.2 μm, and an edge angle θB = 45 ° protruding toward the pad 54 side. The first and second diamond films 17 and 18 of the cutting edge 14 are formed by a source gas (flow velocity): H ₂ (1000 ml / m), CH ₄ (20 ml) by a CVD method using a gas phase synthesis method hot filament furnace. / M), chamber pressure: 8 Torr, filament temperature: 2200 ° C., voltage: 180 V, synthesis rate: 1.0 μm / h.

そして、この半導体研磨布用コンディショナー２０を図１０に示す半導体研磨装置５０に取り付け、パッド５４を用いてウエハＰの研磨加工を行い、研磨レート：ＷＲＲ（ＷａｆｅｒＲｅｍｏｖａｌＲａｔｅ：単位Å／分）を測定した。尚、ウエハＰの研磨加工は、パッド：ニッタハース社製ＩＣ１０００、パッド回転速度：５０ｒｐｍ、半導体研磨布用コンディショナー回転速度：１１０ｒｐｍ、半導体研磨布用コンディショナー荷重：２７Ｎ、ウエハ回転速度：４９ｒｐｍ、ウエハ荷重：３５ｋＰａ、スラリ：キャボット社製ＳＳ２５、の条件下で行った。また、ＷＲＲの測定は、ウエハＰの研磨処理枚数（以下「Ｒｕｎ」）が１Ｒｕｎ（初期）、２００Ｒｕｎ、４００Ｒｕｎ、６００Ｒｕｎ、８００Ｒｕｎ、１０００Ｒｕｎ、１２００Ｒｕｎに達した時点で夫々行った。結果を表１に示す。 Then, this semiconductor polishing cloth conditioner 20 is attached to the semiconductor polishing apparatus 50 shown in FIG. 10, the wafer P is polished using the pad 54, and the polishing rate: WRR (Wafer Removable Rate: unit Å / min) is measured. did. The polishing process of the wafer P is performed by using a pad: IC1000 manufactured by Nitta Haas, pad rotation speed: 50 rpm, semiconductor polishing cloth conditioner rotation speed: 110 rpm, semiconductor polishing cloth conditioner load: 27 N, wafer rotation speed: 49 rpm, wafer load: The test was performed under conditions of 35 kPa, slurry: SS25 manufactured by Cabot Corporation. The WRR measurement was performed when the number of wafers P (hereinafter “Run”) reached 1 Run (initial), 200 Run, 400 Run, 600 Run, 800 Run, 1000 Run, and 1200 Run. The results are shown in Table 1.

[実施例２]
また実施例２として、切刃１４の頂面１５を覆うダイヤモンド膜を、第１ダイヤモンド膜１７及び第２ダイヤモンド膜１８の２層で形成し、第１ダイヤモンド膜１７の厚みＴｃを１５μｍ、第２ダイヤモンド膜１８の厚みＴｄを５μｍとした。また切刃１４の外形幅Ｗ＝Ｗ１＋２Ｔｄ＝３０μｍ＋１０μｍ＝４０μｍとした。それ以外は、実施例１と同様の条件として測定を行った。 [Example 2]
In Example 2, a diamond film covering the top surface 15 of the cutting edge 14 is formed of two layers of a first diamond film 17 and a second diamond film 18, and the first diamond film 17 has a thickness Tc of 15 μm and a second thickness. The thickness Td of the diamond film 18 was 5 μm. The outer width W of the cutting edge 14 was set to W = W1 + 2Td = 30 μm + 10 μm = 40 μm. Other than that, the measurement was performed under the same conditions as in Example 1.

[実施例３]
また実施例３として、切刃１４の頂面１５を覆うダイヤモンド膜を、第１ダイヤモンド膜１７及び第２ダイヤモンド膜１８の２層で形成し、第１ダイヤモンド膜１７の厚みＴｃを１０μｍ、第２ダイヤモンド膜１８の厚みＴｄを１０μｍとした。また切刃１４の外形幅Ｗ＝Ｗ１＋２Ｔｄ＝３０μｍ＋２０μｍ＝５０μｍとした。それ以外は、実施例１と同様の条件として測定を行った。 [Example 3]
Further, as Example 3, a diamond film covering the top surface 15 of the cutting edge 14 is formed by two layers of a first diamond film 17 and a second diamond film 18, and the first diamond film 17 has a thickness Tc of 10 μm and a second thickness. The thickness Td of the diamond film 18 was 10 μm. The outer width W of the cutting edge 14 was set to W = W1 + 2Td = 30 μm + 20 μm = 50 μm. Other than that, the measurement was performed under the same conditions as in Example 1.

[実施例４]
また実施例４として、切刃１４の頂面１５を覆うダイヤモンド膜を、第１ダイヤモンド膜１７及び第２ダイヤモンド膜１８の２層で形成し、第１ダイヤモンド膜１７の厚みＴｃを５μｍ、第２ダイヤモンド膜１８の厚みＴｄを１５μｍとした。また切刃１４の外形幅Ｗ＝Ｗ１＋２Ｔｄ＝３０μｍ＋３０μｍ＝６０μｍとした。それ以外は、実施例１と同様の条件として測定を行った。 [Example 4]
Further, as Example 4, a diamond film covering the top surface 15 of the cutting edge 14 is formed by two layers of a first diamond film 17 and a second diamond film 18, and the first diamond film 17 has a thickness Tc of 5 μm and a second thickness. The thickness Td of the diamond film 18 was 15 μm. The outer width W of the cutting edge 14 was set to W = W1 + 2Td = 30 μm + 30 μm = 60 μm. Other than that, the measurement was performed under the same conditions as in Example 1.

[実施例５]
また実施例５として、切刃１４の頂面１５を覆うダイヤモンド膜を、２層からなる第１ダイヤモンド膜１７及び単層からなる第２ダイヤモンド膜１８の計３層で形成した。詳しくは、第１ダイヤモンド膜１７のうち内側のダイヤモンド膜の厚みを１０μｍ、第１ダイヤモンド膜１７のうち外側のダイヤモンド膜の厚みを９．９μｍとし、第１ダイヤモンド膜１７全体の厚みＴｃを１９．９μｍとした。また、第２ダイヤモンド膜１８の厚みＴｄを０．１μｍとした。それ以外は、実施例１と同様の条件として測定を行った。 [Example 5]
Further, as Example 5, a diamond film covering the top surface 15 of the cutting edge 14 was formed with a total of three layers of a first diamond film 17 composed of two layers and a second diamond film 18 composed of a single layer. Specifically, the inner diamond film of the first diamond film 17 has a thickness of 10 μm, the outer diamond film of the first diamond film 17 has a thickness of 9.9 μm, and the total thickness Tc of the first diamond film 17 is 19. The thickness was 9 μm. The thickness Td of the second diamond film 18 was set to 0.1 μm. Other than that, the measurement was performed under the same conditions as in Example 1.

[実施例６]
また実施例６として、切刃１４の頂面１５を覆うダイヤモンド膜を、２層からなる第１ダイヤモンド膜１７及び単層からなる第２ダイヤモンド膜１８の計３層で形成した。詳しくは、第１ダイヤモンド膜１７のうち内側のダイヤモンド膜の厚みを８μｍ、第１ダイヤモンド膜１７のうち外側のダイヤモンド膜の厚みを７μｍとし、第１ダイヤモンド膜１７全体の厚みＴｃを１５μｍとした。また、第２ダイヤモンド膜１８の厚みＴｄを５μｍとした。それ以外は、実施例２と同様の条件として測定を行った。 [Example 6]
Further, as Example 6, a diamond film covering the top surface 15 of the cutting edge 14 was formed with a total of three layers of a first diamond film 17 composed of two layers and a second diamond film 18 composed of a single layer. Specifically, the inner diamond film of the first diamond film 17 has a thickness of 8 μm, the outer diamond film of the first diamond film 17 has a thickness of 7 μm, and the total thickness Tc of the first diamond film 17 is 15 μm. The thickness Td of the second diamond film 18 was 5 μm. Other than that, the measurement was performed under the same conditions as in Example 2.

[実施例７]
また実施例７として、切刃１４の頂面１５を覆うダイヤモンド膜を、２層からなる第１ダイヤモンド膜１７及び単層からなる第２ダイヤモンド膜１８の計３層で形成した。詳しくは、第１ダイヤモンド膜１７のうち内側のダイヤモンド膜の厚みを５μｍ、第１ダイヤモンド膜１７のうち外側のダイヤモンド膜の厚みを５μｍとし、第１ダイヤモンド膜１７全体の厚みＴｃを１０μｍとした。また、第２ダイヤモンド膜１８の厚みＴｄを１０μｍとした。それ以外は、実施例３と同様の条件として測定を行った。 [Example 7]
Further, as Example 7, the diamond film covering the top surface 15 of the cutting edge 14 was formed by a total of three layers of a first diamond film 17 composed of two layers and a second diamond film 18 composed of a single layer. Specifically, the inner diamond film of the first diamond film 17 has a thickness of 5 μm, the outer diamond film of the first diamond film 17 has a thickness of 5 μm, and the total thickness Tc of the first diamond film 17 is 10 μm. The thickness Td of the second diamond film 18 was 10 μm. Other than that, the measurement was performed under the same conditions as in Example 3.

[実施例８]
また実施例８として、切刃１４の頂面１５を覆うダイヤモンド膜を、２層からなる第１ダイヤモンド膜１７及び単層からなる第２ダイヤモンド膜１８の計３層で形成した。詳しくは、第１ダイヤモンド膜１７のうち内側のダイヤモンド膜の厚みを２μｍ、第１ダイヤモンド膜１７のうち外側のダイヤモンド膜の厚みを３μｍとし、第１ダイヤモンド膜１７全体の厚みＴｃを５μｍとした。また、第２ダイヤモンド膜１８の厚みＴｄを１５μｍとした。それ以外は、実施例４と同様の条件として測定を行った。 [Example 8]
In Example 8, a diamond film covering the top surface 15 of the cutting edge 14 was formed with a total of three layers, a first diamond film 17 composed of two layers and a second diamond film 18 composed of a single layer. Specifically, the inner diamond film of the first diamond film 17 has a thickness of 2 μm, the outer diamond film of the first diamond film 17 has a thickness of 3 μm, and the total thickness Tc of the first diamond film 17 is 5 μm. The thickness Td of the second diamond film 18 was 15 μm. Other than that, the measurement was performed under the same conditions as in Example 4.

[比較例]
また比較例として、図１１（ｂ）に示す切刃１１１の頂面１１５を、単層のダイヤモンド膜１１２を蒸着し被覆した。ダイヤモンド膜１１２の厚みＴｚは、２０μｍとした。また切刃１１１は、外形高さＨ＝５０μｍ、外形幅Ｗ＝Ｗ１＋２Ｔｚ＝３０μｍ＋４０μｍ＝７０μｍ、パッド５４側に突出するエッジの角度θｚ＝４５°とした。それ以外は、実施例１と同様の条件として測定を行った。 [Comparative example]
As a comparative example, the top surface 115 of the cutting edge 111 shown in FIG. 11B was coated by depositing a single-layer diamond film 112. The thickness Tz of the diamond film 112 was 20 μm. The cutting edge 111 has an outer height H = 50 μm, an outer width W = W1 + 2Tz = 30 μm + 40 μm = 70 μm, and an angle θz = 45 ° of an edge protruding toward the pad 54 side. Other than that, the measurement was performed under the same conditions as in Example 1.

表１に示す通り、実施例１〜３及び５〜７においては、比較例に比べ初期（１Ｒｕｎ）の研磨レート：ＷＲＲの安定性が大幅に改善された。また、実施例４，８においては、初期（１Ｒｕｎ）の研磨レート：ＷＲＲは２０００Å／分程度であるものの、以降１２００Ｒｕｎ迄に亘り研磨レート：ＷＲＲが２０００Å／分以上に維持され、安定した研削性能が得られることが確認された。また、実施例１〜８においては、１２００Ｒｕｎにおける研磨レート：ＷＲＲが全て２０００Å／分以上に確保されており、工具寿命が長期に亘り安定して確保されるとともに切刃１４の研削性能が高められることが確認された。
一方、比較例においては、初期（１Ｒｕｎ）の研磨レート：ＷＲＲは２０００Å／分以上に確保されているものの、８００Ｒｕｎを超えた頃から研磨レート：ＷＲＲが顕著に低下しており、早期に工具寿命の兆候が確認された。 As shown in Table 1, in Examples 1 to 3 and 5 to 7, the stability of the initial (1 Run) polishing rate: WRR was greatly improved as compared with the comparative example. In Examples 4 and 8, the initial (1 Run) polishing rate: WRR is about 2000 mm / min, but thereafter, the polishing rate: WRR is maintained at 2000 mm / min or more up to 1200 Run and stable grinding performance. It was confirmed that Further, in Examples 1 to 8, the polishing rate: WRR at 1200 Run is all secured at 2000 Å / min or more, the tool life is stably secured over a long period of time, and the grinding performance of the cutting blade 14 is enhanced. It was confirmed.
On the other hand, in the comparative example, although the initial (1 Run) polishing rate: WRR is ensured to be 2000 Å / min or more, the polishing rate: WRR has been remarkably lowered from the time when it exceeds 800 Run, and the tool life is shortened early. Was confirmed.

２，１２基板
３台座部（基板）
４，１４，２４切刃
５，１５頂面
６，１６，１６ａ壁面
７，１７，２７第１ダイヤモンド膜
７ａ，１７ａ，２７ａ第１ダイヤモンド膜の表面
７ｂ，１７ｂ，２７ｂ第１ダイヤモンド膜の側面（縁部）
８，１８，２８第２ダイヤモンド膜
１０，２０半導体研磨布用コンディショナー
１５Ａ溝（凹部）
２７Ａダイヤモンド膜（第１ダイヤモンド膜のうち内側の膜）
２７Ｂダイヤモンド膜（第１ダイヤモンド膜のうち外側の膜）
５０半導体研磨装置
５４パッド（半導体研磨布）
Ｔａ，Ｔｃ，Ｔｅ第１ダイヤモンド膜の厚み
Ｔｂ，Ｔｄ，Ｔｆ第２ダイヤモンド膜の厚み 2,12 substrate 3 pedestal (substrate)
4, 14, 24 Cutting edge 5,15 Top surface 6, 16, 16a Wall surface 7, 17, 27 First diamond film 7a, 17a, 27a Surface of first diamond film 7b, 17b, 27b Side surface of first diamond film ( Edge)
8, 18, 28 Second diamond film 10, 20 Conditioner for semiconductor polishing cloth 15A Groove (recess)
27A Diamond film (the inner film of the first diamond film)
27B Diamond film (outer film of the first diamond film)
50 Semiconductor polishing equipment 54 Pad (semiconductor polishing cloth)
Ta, Tc, Te Thickness of first diamond film Tb, Td, Tf Thickness of second diamond film

Claims

A conditioner for a semiconductor polishing cloth that uses a cutting blade protruding from the surface of the substrate to grind the semiconductor polishing cloth disposed opposite to the substrate,
The cutting blade includes a top surface facing the semiconductor polishing cloth side, and a wall surface that intersects the top surface and extends to the surface side of the substrate,
The top surface is covered with a first diamond film having an edge at an intersection ridge line portion between the top surface and the wall surface, and a second diamond film is formed from the surface of the first diamond film to at least the wall surface. A conditioner for semiconductor polishing cloth, which is coated.

A conditioner for a semiconductor polishing cloth according to claim 1,
A conditioner for a semiconductor polishing cloth, wherein the thickness of the second diamond film is set to be equal to or less than the thickness of the first diamond film.

A conditioner for a semiconductor polishing cloth according to claim 1 or 2,
A conditioner for a semiconductor polishing cloth, wherein the thickness of the second diamond film is set in a range of 0.1 μm to 10 μm.

A conditioner for a semiconductor polishing cloth according to any one of claims 1 to 3,
A conditioner for semiconductor polishing cloth, wherein the first diamond film is formed of a plurality of films.

It is a manufacturing method of the conditioner for semiconductor polishing cloths as described in any one of Claim 1 to 4,
Forming the first diamond film on the surface of the substrate;
Forming the cutting blade with the top surface coated with the first diamond film by cutting the surface of the first diamond film and the substrate except for the portion to be the cutting edge;
And a step of forming the second diamond film from the surface of the first diamond film to at least the wall surface.

It is a manufacturing method of the conditioner for semiconductor polishing cloths according to claim 5,
Forming the first diamond film on the surface of the substrate including the recess after forming a recess having a bottom surface inclined with respect to the surface on the surface of the substrate;
Scraping the surface of the first diamond film and the substrate so that the bottom surface of the recess becomes the top surface, and forming the cutting edge;
And a step of forming the second diamond film from the surface of the first diamond film to at least the wall surface.

A semiconductor polishing apparatus comprising a semiconductor polishing cloth and a conditioner for a semiconductor polishing cloth,
A semiconductor polishing apparatus comprising the semiconductor polishing pad conditioner according to claim 1 as the semiconductor polishing pad conditioner.