JP2010061860A - Plasma generation device - Google Patents

Abstract

A plasma generation apparatus having a wide plasma generation space and capable of performing plasma processing continuously and uniformly.
A microwave plasma comprising a dielectric plate, a plate-like slot antenna provided on one side of the dielectric plate, and a microwave waveguide provided outside the slot antenna. The generating means R is arranged with the dielectric plates 2 facing each other, and the peripheral edge between the pair of facing microwave plasma generating means R is surrounded by the wall bodies 12 and 14, and the pair of micro plasmas is formed. A space formed by the wave plasma generating means R and the wall bodies 12 and 14 is a plasma generation space.
[Selection] Figure 2

Description

  The present invention relates to a plasma generating apparatus that uses microwaves to generate high-density surface wave plasma in a reduced pressure space in a wide space, and three-dimensionally plasma-processes the outer peripheral surface of an object to be processed.

  In recent years, cleaning of intermediate materials by plasma under reduced pressure, surface modification, etching, film formation, etc. are widely used in the industry from the viewpoint of environmental protection and treatment effects for volatile organic compound (VOC) suppression, etc. It has come to be used.

  As the low-pressure plasma treatment, there are many methods in which plasma is mainly generated by high frequency (RF) and the adherend is irradiated with the generated plasma. For example, it is used in a method of improving the adhesion with a polyamide resin layer by modifying the outer peripheral surface of a fluororesin layer with reduced-pressure radio frequency (RF) plasma (see Patent Document 1).

Recently, there is a method in which a microwave is supplied into a vacuum vessel in which a launcher is arranged to generate volume wave plasma. For example, plasma is generated by supplying microwaves into a vacuum vessel in which a pair of launchers are arranged, and a diamond thin film is manufactured by a CVD method using the plasma (see Patent Document 2).
JP 2001-270051 A JP 2004-346385 A

  However, the reduced pressure radio frequency (RF) plasma processing described in Patent Document 1 has a problem that the diameter of the processing surface is limited because the plasma generation space is narrowly limited. Further, since the plasma electron density is low, it takes time for the treatment, and the interlayer adhesion obtained thereby is not so high. Then, although the method of applying a coupling agent after the said process and improving adhesiveness is also proposed, since a process increases, there exists a problem in workability | operativity.

  Further, the volume wave plasma described in Patent Document 2 has a problem that the plasma density at the center is the highest, and the plasma electron density decreases as the distance from the center increases. That is, as the outer periphery of the adherend becomes larger, the plasma treatment effect becomes lower. Moreover, since the volume plasma is a ball-type plasma, when plasma processing is performed while moving the adherend, a large number of paired launchers are required, which impairs economics in terms of equipment cost (equipment cost increases). In addition, the discontinuous ball plasma may cause a problem in the processing effect.

  The present invention has been made in view of such circumstances, and an object thereof is to provide a plasma generation apparatus capable of performing plasma processing continuously and uniformly with a wide plasma generation space.

  In order to achieve the above object, a plasma generation apparatus according to the present invention includes a dielectric plate, a plate-like slot antenna provided on one side of the dielectric plate, and a microwave waveguide provided outside the slot antenna. A microwave plasma generating means comprising a tube is arranged with the dielectric plates facing each other, and a peripheral edge between the pair of facing microwave plasma generating means is surrounded by a wall, The space formed by the microwave plasma generating means and the wall body is a plasma generation space.

  In the plasma generating apparatus of the present invention, two plasma generating means each including a dielectric plate, a slot antenna, and a microwave waveguide are provided to face each other. For this reason, the plasma generated by each plasma generating means can be superposed in the chamber. Thereby, the plasma density can be made uniform between the two plasma generating means facing each other. Then, by moving the plasma processing object in the meantime (plasma region where the plasma density is uniform), the entire outer peripheral surface of the plasma processing object is uniformly microwaved at a time without rotating the plasma processing object or the plasma generator. Plasma treatment can be performed. Moreover, the plasma generation space (plasma region having a uniform plasma density) is wider than conventional RF plasma. Therefore, for example, even if the outer diameter of the plasma processing object is changed by 50 mm or more, the microwave plasma processing can be performed without recreating the plasma generation apparatus.

  Further, the set of opposed microwave plasma generating means and the wall body are detachably formed, and the wall body serves as a spacer for adjusting the distance between the set of opposed microwave plasma generating means. If this is the case, the plasma irradiation distance to the plasma object can be changed by changing the dimensions of the wall body or adding a wall body, thereby adjusting the plasma density. can do. For this reason, it can respond to the magnitude | size of various diameters, without producing a plasma production apparatus again.

  In the case where the microwave plasma generating means is formed in a long shape, and the plasma processing object moves in the plasma generation space along the longitudinal direction thereof and is subjected to plasma processing in the process. Since the distance to which the plasma object is exposed to the microwave plasma can be increased, the moving time of the plasma object can be increased and the microwave plasma process can be performed in a short time.

  Further, when a plurality of slots are formed along the longitudinal direction of the slot antenna, similarly to the above, the distance at which the plasma processing object is exposed to the microwave plasma can be increased, and the plasma coverage is increased. Microwave plasma processing can be performed in a short time by increasing the moving time of the processing body.

  And when the said plasma to-be-processed object is one elongate body chosen from the group which consists of metal piping, resin piping, rubber piping, a hose, a tube, and a thread | yarn, a microwave plasma process is carried out to the elongate body It can carry out continuously and uniformly along the axial direction.

  In particular, a microwave oscillator is connected to the microwave waveguides of the pair of opposed microwave plasma generation means via a microwave solid circuit and a rectangular waveguide made of a combination of a plurality of coaxial waveguides. The distance between the opposing pair of microwave plasma generation means is adjusted to the shape of the plasma processing object and the plasma by changing the arrangement of the rectangular waveguide and the microwave circuit. And it is not necessary to recreate the microwave waveguide.

  Further, when the microwave oscillator is connected to the microwave waveguide of the pair of opposed microwave plasma generating means via the branching waveguide, the microwave from the microwave oscillator is branched. It is not necessary to newly introduce a microwave power source, an oscillator, or the like by branching at the type waveguide. Moreover, it is easy to make the plasma density uniform between a pair of opposed plasma generating means.

  Further, a preliminary vacuum chamber is provided on the outer surfaces of a pair of opposing walls that form the plasma generation space, and a through hole having a diameter smaller than the outer diameter of the plasma processing object is provided on the outer wall of the preliminary vacuum chamber. When a rubber elastic seal member is provided, microwave plasma processing can be performed in conjunction with the work-in-process inline under atmospheric pressure.

  Next, embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 1 schematically shows a method of manufacturing a low fuel permeability hose using an embodiment of the plasma generating apparatus of the present invention. In this embodiment, first, a low fuel permeation layer A made of a fluorine-based resin or the like is continuously extruded into a cylindrical shape by the first extruder M ₁ . Next, the fuel low-permeability layer A is continuously introduced into the plasma generating apparatus P of the present invention while being fed out, and is provided on the left and right or upper and lower sides (left and right sides in FIG. 1) along the axial direction of the fuel low-permeability layer A. From the microwave plasma generation means R, the microwave plasma treatment at a frequency of 433 MHz to 2.45 GHz is continuously performed in the axial direction on the outer peripheral surface of the cylindrical fuel low-permeability layer A. Subsequently, after the fuel low-permeability layer A is led out from the plasma generating device P, it is introduced into the _second extruder M ₂ , and a cylinder is formed on the outer peripheral surface of the fuel low-permeability layer A activated by microwave plasma treatment. The outer layer B is directly laminated by extrusion. In this way, the low fuel permeability hose is continuously manufactured. Then, it is cut into an appropriate length and used.

  As shown in FIG. 2, the plasma generation apparatus P includes a sealed chamber 1 having a substantially rectangular tube shape. The internal space of the chamber 1 is a plasma generation space. Of the first to fourth wall bodies 11 to 14 forming the substantially square cylindrical peripheral wall of the chamber 1, the first and third wall bodies 11 and 13 opposed to each other in the vertical state are connected to the plasma generating means. R is provided oppositely. The second and fourth wall bodies 12 and 14 facing each other in the horizontal state are made of a metal plate-like body, and the second wall body 12 includes a plasma generating gas in the chamber 1. A gas supply port 15 for discharging the gas inside the chamber 1 is formed in the fourth wall body 14. A wall body (not shown) in which an inlet for introducing the low fuel permeation layer A into the chamber 1 is formed at one end opening of the substantially rectangular tube-shaped chamber 1, and the other end The opening is provided with a wall (not shown) in which a lead-out port for leading out the low fuel permeation layer A from the inside of the chamber 1 is formed.

  The plasma generating means R is formed long along the axial direction of the substantially square cylindrical sealed chamber 1, and as shown in FIG. 2, a dielectric plate 2 made of quartz and an outer side thereof A metal plate-like slot antenna 4 and a metal microwave waveguide 5 having a substantially U-shaped cross section are provided. The dielectric plate 2 is formed in a long plate shape along the axial direction of the substantially square cylindrical sealed chamber 1, and is made of a thick plate-like metal having a cooling water flow path 34 therein. It is fixed to the holder 3. When the holder 3 is fixed to the second and fourth wall bodies 12, 14 facing each other, the dielectric plate 2 is in a state of facing each other, and the first and third walls of the chamber 1 are placed. The bodies 11 and 13 are formed. The plate-like slot antenna 4 is formed in a long plate shape along the axial direction of the substantially rectangular tube-shaped sealed chamber 1, and the dielectric plates 2 are arranged outside the opposing dielectric plates 2. It is arranged in a state of facing and contacting. The microwave waveguide 5 having the substantially U-shaped cross section is formed to be elongated along the axial direction of the substantially rectangular tube-shaped sealed chamber 1, and the substantially U-shaped opening has a plate-like shape. It faces the slot antenna 4, so to speak, a part of the peripheral wall forming the microwave waveguide 5 is configured by the slot antenna 4. As a result, a space for microwave propagation is provided outside the slot antenna 4. A microwave oscillator 6 (see FIG. 1) is connected to the axial end of the microwave waveguide 5.

  More specifically, flanges 17 are erected on the left and right side edges in the longitudinal direction of the opposing second and fourth wall bodies 12 and 14 of the substantially rectangular tube-shaped chamber 1. In the flange 17, through holes 18 for inserting bolts 7 are formed at predetermined intervals along the axial direction of the chamber 1. Using this through hole 18, the holder 3 to which the dielectric plate 2 is fixed is detachably fixed to the flange 17 with bolts 7 and nuts 8. The thick plate-like holder 3 has a step portion 31 formed at an edge along the longitudinal axis, and the edge of the dielectric plate 2 is supported by the step portion 31. The holder 3 is formed with a through hole 32 for inserting a bolt 7 at a position corresponding to the through hole 18 formed in the flange 17 of the second and fourth wall bodies 12 and 14 of the chamber 1. ing. Then, as described above, the bolt 7 is inserted into both the through holes 18 and 32 and tightened with the nut 8 so that the holder 3 to which the dielectric plate 2 is fixed is detachably sealed to the flange 17 of the chamber 1. It is fixed in the state. The holder 3 is formed with a female screw 33 used when the microwave waveguide 5 is fixed with a bolt 9. Furthermore, a flow path 34 for flowing a cooling fluid such as cooling water is formed inside the holder 3. The cooling fluid flowing through the flow path 34 can prevent overheating of the dielectric plate 2 due to microwaves or plasma, and can prevent the dielectric plate 2 from cracking.

  Pins 21 for positioning the slot antenna 4 are provided at predetermined intervals along the side edge of the dielectric plate 2 on both sides of the surface of the dielectric plate 2 where the slot antenna 4 is in contact. It has been. Further, examples of the material (dielectric) for forming the dielectric plate 2 include alumina and the like in addition to the quartz.

  The slot antenna 4 has a large number of slots (elongated through holes) 41 formed in a metal plate such as a copper plate along the longitudinal direction thereof. The slot 41 captures the microwave propagating through the microwave waveguide 5 and irradiates the microwave toward the inner direction of the chamber 1 (dielectric plate 2 direction) with a high density. The slot antenna 4 can easily generate plasma even under atmospheric pressure. The plurality of slots 41 are preferably arranged in order with a predetermined interval between adjacent slots 41, and a plurality of slots 41 are usually formed in a row. This column is preferably a plurality of columns. Further, on both sides of the slot antenna 4, through holes 42 are formed at positions corresponding to the slot antenna 4 positioning pins 21 formed on the dielectric plate 2. The slot antenna 4 is properly positioned with respect to the dielectric plate 2 by inserting the pin 21 through the through hole 42.

  The microwave waveguide 5 is a long body having a substantially U-shaped cross section, and a flange 51 extends from an opening edge of the substantially U-shaped opening. A through hole 52 for inserting a bolt 9 is formed in the flange 51 at a position corresponding to the female screw 33 formed in the holder 3 for fixing the dielectric plate 2. Then, the microwave waveguide 5 is fixed to the dielectric plate 2 fixing holder 3 by inserting the bolt 9 into the through hole 52 and screwing the bolt 9 into the female screw 33. In this fixed state, the slot antenna 4 and the dielectric plate 2 are sandwiched and fixed by the flange 51 of the microwave waveguide 5 and the dielectric plate 2 fixing holder 3. By this fixing, the dielectric plate 2, the holder 3, the slot antenna 4, and the microwave waveguide 5 are integrated to constitute the plasma generating means R.

  The microwave oscillator 6 (see FIG. 1) oscillates a microwave having a frequency of 433 MHz to 2.45 GHz. Preferred frequencies are 846 MHz, 896 MHz, 915 MHz or 2.45 GHz. This is because the surface modification is performed better within the range of the Radio Law by performing the treatment with the microwave having such a frequency.

  And the microwave plasma process by such a plasma generator P is performed as follows. That is, first, the gas inside the chamber 1 is discharged from the gas discharge port 16 while supplying the plasma generating gas into the chamber 1 from the gas supply port 15. Thereby, the inside of the chamber 1 is made into a plasma generating gas atmosphere. Next, a microwave is oscillated from the microwave oscillator 6 (see FIG. 1). The oscillated microwave propagates through the microwave waveguide 5 and is irradiated onto the dielectric plate 2 by the slot antenna 4. Thereby, a surface wave is generated on the surface of the dielectric plate 2 facing each other. This surface wave excites the plasma generating gas by its own surface wave energy to generate plasma. In this state, after the cylindrical low fuel permeation layer A is continuously introduced into the chamber 1 from the inlet at one end of the chamber 1 and is run between the opposing dielectric plates 2 Derived from the outlet at the other end of the chamber 1. Here, in the process in which the fuel low-permeability layer A travels between the opposing dielectric plates 2, as shown in FIG. 3, the plasma from the opposing dielectric plates 2 (see the dashed line in the drawing) Regardless of the plasma irradiation distance (the length of the alternate long and short dash line), the outer peripheral surface of the low fuel permeable layer A is uniformly subjected to microwave plasma treatment, and at all points on the outer peripheral surface (for example, four points a to d in the figure). The effect of the microwave plasma treatment is the same. This is considered to be due to the fact that the two plasmas generated by the surface waves of the two opposing dielectric plates 2 overlap and the plasma density between the opposing dielectric plates 2 becomes uniform. That is, when the fuel low-permeability layer A travels in the plasma region where the plasma density is uniform (between the opposing dielectric plates 2), even if the fuel low-permeability layer A is cylindrical, The uniform density plasma can be applied uniformly, and the outer peripheral surface thereof can be uniformly subjected to microwave plasma treatment. Further, the microwave plasma treatment can be continuously performed along the axial direction of the cylindrical fuel low-permeability layer A.

  In this embodiment, as shown in FIG. 2, the holder 3 for fixing the dielectric plate 2 and the second and fourth wall bodies 12 and 14 of the chamber 1 are attached and detached by fixing with bolts 7 and nuts 8. Therefore, the second and fourth wall bodies 12 and 14 of the chamber 1 can be easily replaced with ones having appropriate dimensions, and various diameters of the low-permeability fuel layer A subjected to microwave plasma processing can be obtained. Can correspond to the size.

  In the above embodiment, the low fuel permeation layer A is taken as an example of the plasma processing object, but other materials such as metal pipes, resin pipes, rubber pipes, hoses, tubes, threads, etc. may be used. A long body is mentioned.

  In the above-described embodiment, two microwave plasma generation means R are opposed to each other, and a set of three or more microwave plasma generation means R may be opposed to each other. If it does in this way, the freedom degree of plasma generation will increase and the freedom degree of microwave plasma processing will also increase.

  Furthermore, in the above embodiment, as shown in FIG. 4, a microwave in which a plurality of coaxial waveguides V are connected in series to a microwave waveguide 5 of a pair of opposed microwave plasma generation means R. A solid circuit W may be connected, a rectangular waveguide X may be connected to the microwave solid circuit W, and the microwave oscillator 6 may be connected via the microwave solid circuit W and the rectangular waveguide X. In this way, by changing the arrangement of the plurality of coaxial waveguides V and the rectangular waveguide X constituting the microwave three-dimensional circuit W, the opposing microwave plasma generation means R can be changed. The distance between them can be changed according to the shape of the plasma object (for example, the low fuel permeation layer A) and the plasma, and there is no need to re-create the microwave waveguide 5.

  Moreover, in the said embodiment, although the microwave oscillator 6 was connected to each of the microwave waveguide 5 of a set of opposing microwave plasma generation means R, as shown in FIG. May be connected to the microwave waveguide 5 through the branched waveguide Y. In this way, since the microwave from the microwave oscillator 6 can be branched by the branching waveguide Y, it is not necessary to newly introduce a microwave power source or an oscillator. Moreover, it is easy to make the plasma density uniform between a pair of opposed plasma generating means R. Further, as shown in FIG. 6, the rectangular waveguide X and the microwave three-dimensional circuit W may be connected between the branched waveguide Y and the microwave waveguide 5.

  Further, in the above embodiment, a wall body (not shown) in which an inlet for introducing a plasma object (for example, a low fuel permeation layer A) into the chamber 1 is formed and the low fuel permeation layer A is provided. A preliminary vacuum chamber (not shown) is provided on the outer surface of a wall (not shown) in which a lead-out port leading out from the chamber 1 is formed, and the outer diameter of the plasma processing object is provided on the outer wall of the preliminary vacuum chamber. Alternatively, a rubber elastic sealing member having a smaller diameter through hole may be provided.

  Next, examples will be described. However, the present invention is not limited to the examples.

Using a Langmuir probe, the electron density of the plasma was measured in the circumferential direction. For the electron density measurement, a Langmuir probe made of tungsten having a diameter of 0.1 mm and a tip length of 4.5 mm was used, and the distance between the center of the Langmuir probe tip and the center of the probe axis was set to 2 cm. The probe can be swept in the z-axis direction and can rotate about the z-axis. The probe tip was fixed at z = 0 cm and rotated around the z-axis to measure the electron density in the circumferential direction with a radius of 2 cm from the z-axis. The electron temperature was derived from the current / voltage characteristics of the probe, and a negative voltage of −20 V was applied to the probe and the ion saturation current was measured to evaluate the electron density (the metal rod with the Langmuir probe attached in the longitudinal direction). The rod was inserted and bent at a tip of 2 cm, and rotated every 30 ° in the circumferential direction. The generation of plasma with high density and small variation was confirmed with an average electron density in the circumferential direction of 1.33 × 10 ¹² cm ⁻³ and a deviation of 0.05 × 10 ¹² cm ⁻³ (see Table 1 below).

  PTFE tubes (32 cm long) with an outer diameter of 40 mm and a thickness of 2 mm are introduced into a microwave plasma processing apparatus, and the above-mentioned cylindrical fuel low-permeability layer is formed by microwave plasma generating means provided on the left and right sides along the axial direction. The outer peripheral surface of was subjected to microwave plasma treatment. This microwave plasma treatment was performed for 10 seconds with microwaves having a frequency of 2.45 GHz under a reduced pressure of 13 Pa (absolute pressure) in an argon gas atmosphere. Then, the contact angle of the circumferential direction and a longitudinal direction was measured for the water contact angle with the FACE contact angle meter (model: CA-X) by Kyowa Interface Science. As a result, it was confirmed that the contact angle when untreated was 110 ° C., the contact angle was uniformly reduced in both the circumferential direction and the longitudinal direction, and the hydrophobic surface was modified to be hydrophilic.

  Next, instead of PTFE, the water contact angle in the circumferential direction was measured with ETFE (manufactured by Asahi Glass Co., Ltd., full-on ETFE C88AXP). The untreated surface became hydrophilic at 34 ° with respect to 102 °.

  ETFE (made by Asahi Glass Co., Ltd., Fullon ETFE C88AXP), which is a material for the low-permeability fuel layer, is melt-extruded into a cylindrical shape (inner diameter 6 mm, thickness 0.25 mm), and continuously fed out while inside the microwave plasma generator. The outer peripheral surface of the cylindrical fuel low-permeability layer was subjected to microwave plasma treatment by means of microwave plasma generation means provided on both the left and right sides along the axial direction. This microwave plasma treatment was performed for 2 seconds with a microwave having a frequency of 2.45 GHz under a reduced pressure of 13 Pa (absolute pressure) in an argon gas atmosphere. Subsequently, after the fuel low-permeability layer was derived from the plasma generator, it was introduced into the second extruder, and PA12 (Ube Industries) was applied to the outer peripheral surface of the low-permeability layer subjected to microwave plasma treatment using a melt extruder. Co., Ltd., Uvesta 3030JLX2) was melt-coated to form a cylindrical outer layer (thickness: 0.75 mm). Thereby, a fuel low permeability hose (inner diameter 6 mm, outer diameter 8 mm, length 300 mm) having a two-layer structure was manufactured.

(Interlayer adhesion)
In each fuel low-permeability hose of Examples 2 and 3, gasoline (E10) in which 10 vol% ethanol was mixed with regular gasoline (manufactured by Nippon Oil Co., Ltd.) was sealed (both ends of the hose were sealed with a swage lock), and then 60 ° C. For 500 hours. Thereafter, each of the fuel-low-permeability hoses was cut into four equal parts in the circumferential direction, thereby preparing four strip-shaped samples. Then, the fuel low-permeability layer and the outer layer of each sample were sandwiched between chucks of a tensile tester, and a 180 ° peel test was performed under the condition of a tensile speed of 50 mm / min. Thereby, while measuring the load at the time of a fracture | rupture, the fracture state of the fracture surface was evaluated visually. As a result, in each of the fuel low-permeability hoses of Examples 2 and 3, all four samples had a load at break of 20 N / cm or more and broke without interfacial peeling. This result indicates that the interlayer adhesion is sufficiently excellent.

[Uniform adhesion]
In the 180 ° peel test, the difference between the maximum value and the minimum value was evaluated for the load at the time of rupture of the four samples. As a result, in each fuel low-permeability hose of Examples 2 and 3, the difference was less than 2 N / cm. This result indicates that the uniform adhesiveness is sufficiently excellent.

It is explanatory drawing which shows typically the manufacturing method of the fuel low-permeability hose using one Embodiment of the plasma production apparatus of this invention. It is a cross-sectional perspective view which shows the said plasma production apparatus typically. It is explanatory drawing which shows the said plasma processing state typically. It is explanatory drawing which shows typically the 1st modification of the said plasma production apparatus. It is explanatory drawing which shows typically the 2nd modification of the said plasma production apparatus. It is explanatory drawing which shows typically the 3rd modification of the said plasma production apparatus.

Explanation of symbols

R microwave plasma generating means 2 dielectric plate 4 slot antenna 5 microwave waveguide 12, 14 wall

Claims (8)

  A microwave plasma generating means comprising a dielectric plate, a plate-like slot antenna provided on one side of the dielectric plate, and a microwave waveguide provided outside the slot antenna comprises the dielectric plate It is arranged in a state of being opposed to each other, and a peripheral edge between the pair of opposed microwave plasma generation means is surrounded by a wall, and a space formed by the set of microwave plasma generation means and the wall is formed. A plasma generation apparatus characterized by being a plasma generation space.   The set of opposed microwave plasma generating means and the wall body are detachably formed, and the wall body serves as a spacer for adjusting the distance between the set of opposed microwave plasma generating means. The plasma generating apparatus according to claim 1.   3. The microwave plasma generation means is formed in a long length, and a plasma object is moved in the plasma generation space along the longitudinal direction thereof, and plasma processing is performed in the process. The plasma generating apparatus as described.   The plasma generating apparatus according to claim 3, wherein a plurality of slots are formed in the slot antenna along a longitudinal direction thereof.   The plasma generating apparatus according to claim 3 or 4, wherein the plasma object is one long body selected from the group consisting of metal piping, resin piping, rubber piping, hoses, tubes, and threads.   A microwave oscillator is connected to the microwave waveguides of the pair of opposed microwave plasma generating means via a microwave solid circuit and a rectangular waveguide made of a combination of a plurality of coaxial waveguides. Item 6. The plasma generation device according to any one of Items 1 to 5.   The plasma generation according to any one of claims 1 to 6, wherein a microwave oscillator is connected to the microwave waveguide of the pair of opposed microwave plasma generation means via a branched waveguide. apparatus.   A rubber having a preliminary vacuum chamber provided on the outer surface of a pair of opposing walls forming the plasma generation space, and having a through-hole having a diameter smaller than the outer diameter of the plasma processing object on the outer wall of the preliminary vacuum chamber The plasma generating apparatus according to claim 1, wherein an elastic seal member is provided.

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