JP2010047804A - Porous body, and manufacturing method thereof - Google Patents
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- JP2010047804A JP2010047804A JP2008213378A JP2008213378A JP2010047804A JP 2010047804 A JP2010047804 A JP 2010047804A JP 2008213378 A JP2008213378 A JP 2008213378A JP 2008213378 A JP2008213378 A JP 2008213378A JP 2010047804 A JP2010047804 A JP 2010047804A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 32
- WWNBZGLDODTKEM-UHFFFAOYSA-N sulfanylidenenickel Chemical compound [Ni]=S WWNBZGLDODTKEM-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000007747 plating Methods 0.000 claims abstract description 17
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims abstract description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052802 copper Inorganic materials 0.000 claims abstract description 13
- 239000010949 copper Substances 0.000 claims abstract description 13
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 9
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 150000003464 sulfur compounds Chemical class 0.000 claims description 7
- 229910001453 nickel ion Inorganic materials 0.000 claims description 4
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 claims description 3
- 230000003197 catalytic effect Effects 0.000 abstract description 5
- 238000006467 substitution reaction Methods 0.000 abstract description 5
- 239000007788 liquid Substances 0.000 abstract description 2
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000003054 catalyst Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001513 hot isostatic pressing Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 235000011299 Brassica oleracea var botrytis Nutrition 0.000 description 1
- 235000017647 Brassica oleracea var italica Nutrition 0.000 description 1
- 240000003259 Brassica oleracea var. botrytis Species 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- RRIWRJBSCGCBID-UHFFFAOYSA-L nickel sulfate hexahydrate Chemical compound O.O.O.O.O.O.[Ni+2].[O-]S([O-])(=O)=O RRIWRJBSCGCBID-UHFFFAOYSA-L 0.000 description 1
- 229940116202 nickel sulfate hexahydrate Drugs 0.000 description 1
- -1 nickel sulfide compound Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
この発明は、表面に硫化ニッケル膜を有する多孔質体に関するものであり、特に触媒材料として用いられる。 The present invention relates to a porous body having a nickel sulfide film on the surface, and is used particularly as a catalyst material.
従来より、化学反応に関する触媒能を有する材料としては、白金やパラジウムなどの貴金属が有名である。しかし、昨今は貴金属の価格高騰が激しく、安価な触媒材料が望まれている。このような触媒材料として、硫化ニッケルが注目されている。 Conventionally, noble metals such as platinum and palladium are well known as materials having catalytic ability for chemical reactions. However, the price of precious metals has been rising rapidly recently, and an inexpensive catalyst material is desired. Nickel sulfide is attracting attention as such a catalyst material.
触媒材料においては、反応場が大きいことが必要であるため、大比表面積化が肝要である。大比表面積化を達成するためには、２次元構造ではなく、多孔質体のような３次元構造を利用することが有効である。 In the catalyst material, since a large reaction field is necessary, it is important to increase the specific surface area. In order to achieve a large specific surface area, it is effective to use a three-dimensional structure such as a porous body instead of a two-dimensional structure.
しかしながら、微細に入り組んだ３次元構造を有した基材の表面に、硫化ニッケル等の機能膜を均一に形成することは容易でない。 However, it is not easy to uniformly form a functional film such as nickel sulfide on the surface of a substrate having a three-dimensional structure intricately arranged.
特許文献１では、硫化ニッケル化合物を含む粉末および塩を、熱間静水圧圧縮により焼結させ、網目状の硫化ニッケルを得ている。
しかしながら、特許文献１に記載の方法にて生成された硫化ニッケルは、まだまだ比表面積が小さく、触媒材料としては不十分であるという問題がある。 However, nickel sulfide produced by the method described in Patent Document 1 still has a problem that it has a small specific surface area and is insufficient as a catalyst material.
また、特許文献１においては、硫化ニッケルが金属製の基材の表面に形成されていないので、電極に付随する触媒材料として用いるには、導電率が低いという問題がある。 Moreover, in patent document 1, since nickel sulfide is not formed in the surface of a metal base material, there exists a problem that electrical conductivity is low when using it as a catalyst material accompanying an electrode.
さらに、特許文献１の方法においては、熱間静水圧圧縮を用いるため、工程が大掛かりになり、かつ煩雑であるという問題がある。 Furthermore, in the method of Patent Document 1, since hot isostatic pressing is used, there is a problem that the process becomes large and complicated.
そこで、この発明の目的は、上記のような問題を解決し得る、表面に硫化ニッケル膜を備える大比表面積の多孔質体を提供することにある。 Accordingly, an object of the present invention is to provide a porous body having a large specific surface area and having a nickel sulfide film on the surface, which can solve the above-described problems.
この発明の他の目的は、上記のような問題を解決し得る、上述の多孔質体を製造するための方法を提供することにある。 Another object of the present invention is to provide a method for producing the above-mentioned porous body, which can solve the above problems.
すなわち本発明は、比表面積が１００ｍｍ2／ｍｍ3以上の金属製の基材上に、硫化ニッケル膜が形成されている、多孔質体である。 That is, the present invention is a porous body in which a nickel sulfide film is formed on a metal substrate having a specific surface area of 100 mm 2 / mm 3 or more.
また本発明の多孔質体においては、前記基材の主成分が、銅であることが好ましい。 In the porous body of the present invention, the main component of the substrate is preferably copper.
本発明は、比表面積が１００ｍｍ2／ｍｍ3以上の金属製の基材を用意する工程と、 前記基材に対し、ニッケルイオンまたはニッケル錯体、ならびに硫黄化合物を含むめっき液を付与する工程と、を備える、多孔質体の製造方法にも向けられる。 The present invention comprises a step of preparing a metal substrate having a specific surface area of 100 mm 2 / mm 3 or more, a step of applying a plating solution containing nickel ions or a nickel complex, and a sulfur compound to the substrate, It is also directed to a method for producing a porous body.
また本発明の多孔質体の製造方法では、前記硫黄化合物が、チオ尿素であることが好ましい。 In the method for producing a porous body of the present invention, the sulfur compound is preferably thiourea.
さらに本発明の多孔質体の製造方法は、前記基材の主成分が銅であることも好ましい。 Furthermore, in the method for producing a porous body of the present invention, the main component of the base material is preferably copper.
また本発明の多孔質体の製造方法は、前記基材が、めっきにより形成されるものであることも好ましい。 In the method for producing a porous body of the present invention, the base material is preferably formed by plating.
本発明の多孔質体は、比表面積が１００ｍｍ2／ｍｍ3以上という大比表面積の基材上に、均一に硫化ニッケル膜が形成されているため、非常に触媒能の高い多孔質体として用いられうる。 The porous body of the present invention is used as a porous body having a very high catalytic ability because a nickel sulfide film is uniformly formed on a substrate having a large specific surface area of 100 mm 2 / mm 3 or more. Can be.
また、本発明の多孔質体は、触媒材料である硫化ニッケル膜の基材として、銅などの良導性金属を用いているため、電極に付随する触媒材料として用いられ場た合、効率の向上に寄与する。 Further, since the porous body of the present invention uses a highly conductive metal such as copper as the base material of the nickel sulfide film that is a catalyst material, the efficiency of the porous body when used as a catalyst material associated with an electrode Contributes to improvement.
本発明の多孔質体の製造方法によれば、基材に対し、めっき液を付与するだけで硫化ニッケル膜が均一に形成されるため、工程が非常に簡便となる。 According to the method for producing a porous body of the present invention, since the nickel sulfide film is uniformly formed only by applying the plating solution to the base material, the process becomes very simple.
また、チオ尿素を含むニッケルめっき液を付与した場合、イオン化傾向の低い銅製の基材上にも、均一に硫化ニッケル膜が形成されるため、多孔質体の導電率の向上に大きく寄与する。 In addition, when a nickel plating solution containing thiourea is applied, a nickel sulfide film is evenly formed on a copper base material having a low ionization tendency, which greatly contributes to an improvement in the conductivity of the porous body.
以下、本発明の多孔質体の詳細について、本発明の多孔質体の製造工程を中心に説明する。 Hereinafter, the details of the porous body of the present invention will be described focusing on the production process of the porous body of the present invention.
まず第一の工程として、比表面積が１００ｍｍ2／ｍｍ3以上の金属製の基材が用意される。基材の材質は、ある程度導電性の高い金属であれば特に限られない。 First, as a first step, a specific surface area of 100 mm 2 / mm 3 or more metallic substrate is provided. The material of the base material is not particularly limited as long as it is a metal having high conductivity to some extent.
この基材は、比表面積が１００ｍｍ2／ｍｍ3以上であるとき、表面に硫化ニッケル膜を形成した際、非常に高い触媒能が得られる。 When this substrate has a specific surface area of 100 mm 2 / mm 3 or more, a very high catalytic ability is obtained when a nickel sulfide film is formed on the surface.
また、この基材は多孔質であることによって大きな比表面積を得ているが、特に微細孔を多数有する形状には限定されない。ここでいう「多孔質」は、表面近傍が３次元構造を有している状態の総称であり、たとえば、ワイヤ状、ブロッコリ状の形状も含む。 Moreover, although this base material has a large specific surface area because it is porous, it is not particularly limited to a shape having a large number of micropores. “Porous” as used herein is a general term for a state in which the vicinity of the surface has a three-dimensional structure, and includes, for example, a wire shape and a broccoli shape.
なお、このような大比表面積の金属多孔質体を得るには、めっきが有効である。めっき液に様々な添加剤を入れることにより、微細な３次元構造を有する金属多孔質体からなる基材が得られる。 In order to obtain such a metal porous body having a large specific surface area, plating is effective. By adding various additives to the plating solution, a substrate made of a metal porous body having a fine three-dimensional structure can be obtained.
次に、第二の工程として、前記基材に対し、ニッケルイオンまたはニッケル錯体、ならびに硫黄化合物を含むめっき液が付与される。これによって、多孔質状の基材の表面に、均一に硫化ニッケル膜が形成される。 Next, as a second step, a plating solution containing nickel ions or a nickel complex and a sulfur compound is applied to the substrate. As a result, a nickel sulfide film is uniformly formed on the surface of the porous substrate.
このとき、基材の表面近傍では、基材を構成する金属と、めっき液中とのニッケル成分との置換反応が起こっている。すなわち、基材を構成する金属がめっき液中へ溶解し、その溶解により生じた電子をニッケルイオンが受け取って、基材の表面に析出する。このとき、液中の硫黄化合物もニッケルと同時に析出するため、結果として、基材の表面に硫化ニッケル膜が形成される。 At this time, the substitution reaction of the metal which comprises a base material and the nickel component in a plating solution has occurred in the surface vicinity of the base material. That is, the metal which comprises a base material melt | dissolves in a plating solution, the nickel ion receives the electron produced by the melt | dissolution, and deposits on the surface of a base material. At this time, since the sulfur compound in the liquid is also deposited at the same time as the nickel, a nickel sulfide film is formed on the surface of the substrate as a result.
この硫黄化合物がチオ尿素であるとき、特に上記の置換反応が促進され、かつ、硫黄成分の共析による硫化ニッケル膜の形成が促進される。これは、めっき液中のニッケル原子が、チオ尿素中のＳ原子に配位しやすいためと考えられる。 When the sulfur compound is thiourea, the above substitution reaction is particularly promoted, and the formation of a nickel sulfide film by the eutectoid of sulfur components is promoted. This is presumably because nickel atoms in the plating solution easily coordinate to S atoms in thiourea.
このように、基材の材質が比較的イオン化傾向の低い銅であっても、銅の溶出とニッケルの析出による置換反応が効率良く生じる。すなわち、基材に導電性の高い銅を用いることが可能になると、電極に用いられた場合、非常に効果的である。 Thus, even if the material of the base material is copper with a relatively low ionization tendency, a substitution reaction due to elution of copper and precipitation of nickel occurs efficiently. That is, when copper having high conductivity can be used for the substrate, it is very effective when used for the electrode.
また、このような置換反応による硫化ニッケルの析出は、非常につきまわり性に優れるため、微細な３次元構造を有する基材上にも、くまなく均一に硫化ニッケル膜が形成される。このつきまわり性は、気相法による成膜や、電解めっきによる成膜と比較して非常に優れている。 Further, the precipitation of nickel sulfide due to such a substitution reaction is very easy to rotate, so that a nickel sulfide film is uniformly formed on a substrate having a fine three-dimensional structure. This throwing power is very excellent compared to film formation by a vapor phase method and film formation by electrolytic plating.
このようにして得られた硫化ニッケル膜の成分は、Ｎｉ3Ｓ2が支配的である。 The component of the nickel sulfide film thus obtained is predominantly Ni 3 S 2 .
以下に、本発明の実験例について記載する。 Hereinafter, experimental examples of the present invention will be described.
まず、アルミナ基板を用意した。このアルミナ基板を、アセチレン系添加剤を含む硫酸銅系の無電解銅めっき液に浸漬し、アルミナ基板上に、多孔質の銅めっき膜を得た。この多孔質の銅めっき膜が大比表面積を有する金属製の基材であり、比表面積は１００ｍｍ2／ｍｍ3以上であった。 First, an alumina substrate was prepared. This alumina substrate was immersed in a copper sulfate-based electroless copper plating solution containing an acetylene-based additive to obtain a porous copper-plated film on the alumina substrate. The porous copper plating film of a metallic substrate having a large specific surface area, specific surface area was 100 mm 2 / mm 3 or more.
次に、得られた基材に対し、前処理として、脱脂処理（４０℃、５分、アトテック社製プロセレクトＳＦ）、ソフトエッチング（３０℃、１分、アトテック社製マイクロエッチＳＦ）、および水洗を行った。 Next, as a pretreatment for the obtained base material, degreasing (40 ° C., 5 minutes, Atotech Proselect SF), soft etching (30 ° C., 1 minute, Atotech Micro Etch SF), and Washed with water.
次いで、前処理の完了した基材を、下記のニッケルめっき液に浸漬し、揺動させながら２０分間保持し、基材の表面に硫化ニッケル膜を形成した。 Next, the pretreated substrate was immersed in the following nickel plating solution and held for 20 minutes while rocking to form a nickel sulfide film on the surface of the substrate.
硫酸ニッケル６水和物： １００ｇ／Ｌ
チオ尿素： ８０ｇ／Ｌ
ホウ酸： ３０ｇ／Ｌ
ｐＨ： ４．０
温度： ７０℃
表面に硫化ニッケル膜の形成された基材について、Ｘ線回折により構造分析を行ったところ、硫化ニッケルの主成分はＮｉ3Ｓ2であることがわかった。このＸ線回折チャートを図１に示す。また、多孔質状の基材表面上が、硫化ニッケル膜で均一に被覆されていた。膜厚は０．０８〜０．１２μｍと、ばらつきの小さいものであった。
Nickel sulfate hexahydrate: 100 g / L
Thiourea: 80 g / L
Boric acid: 30 g / L
pH: 4.0
Temperature: 70 ° C
A structural analysis of the base material having a nickel sulfide film formed on the surface by X-ray diffraction revealed that the main component of nickel sulfide was Ni 3 S 2 . This X-ray diffraction chart is shown in FIG. Further, the surface of the porous substrate was uniformly coated with a nickel sulfide film. The film thickness was 0.08 to 0.12 [mu] m, and the variation was small.
Claims (6)
前記基材に対し、ニッケルイオンまたはニッケル錯体、ならびに硫黄化合物を含むめっき液を付与する工程と、
を備える、多孔質体の製造方法。 A step of preparing a metal substrate having a specific surface area of 100 mm 2 / mm 3 or more,
A step of applying a plating solution containing nickel ions or a nickel complex, and a sulfur compound to the substrate;
A method for producing a porous body.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102383119A (en) * | 2011-10-19 | 2012-03-21 | 西安理工大学 | Method for modifying surface of nano-porous copper by adopting chemical nickel-plating method |
| CN116024583A (en) * | 2022-11-30 | 2023-04-28 | 中船动力(集团)有限公司 | Nickel sulfide nano rod array electrocatalytic material and preparation method and application thereof |
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| JPH08333605A (en) * | 1995-04-03 | 1996-12-17 | Mitsubishi Materials Corp | Porous metal plate with large specific surface area |
Cited By (2)
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| CN102383119A (en) * | 2011-10-19 | 2012-03-21 | 西安理工大学 | Method for modifying surface of nano-porous copper by adopting chemical nickel-plating method |
| CN116024583A (en) * | 2022-11-30 | 2023-04-28 | 中船动力(集团)有限公司 | Nickel sulfide nano rod array electrocatalytic material and preparation method and application thereof |
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