JP2010045221A - Organic electric device and method for manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organic electric device for restraining separation and the deterioration between organic compound layers, and to provide a method for manufacturing the same. <P>SOLUTION: An organic transistor element 100 is provided by arranging a source electrode 12A and a drain electrode 12B on a substrate 10. An organic semiconductor layer 12, an intermediate layer 14A and an insulating layer 16 are successively directly layered by covering the source electrode 12A and the drain electrode 12B formed on the substrate 10. That is, the intermediate layer 14A is arranged between the organic semiconductor layer 12 and the insulating layer 16. A gate electrode 18 is arranged on the insulating layer 16. The intermediate layer 14A is formed of an application liquid including: an organic material dissolved into a solvent for forming the insulating layer 16 (an upper layer); and a solvent for dissolving a material for constituting the organic semiconductor layer 12 (a lower layer). The intermediate layer 14A is applied to the organic electric device having a layer constitution of laminating two members of a first organic compound layer and a second organic compound layer, without being limited to an organic transistor. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an organic electrical device and a method for manufacturing the same.

  In recent years, development of organic transistor elements using organic materials (organic semiconductor materials) that exhibit semiconducting electrical conduction has been underway. This organic transistor element has advantages such as being suitable for reduction in thickness and weight, flexibility, and low material cost, and is expected as a switching element for flexible displays and the like.

  A method of manufacturing this organic transistor element by combining vacuum deposition, photolithography technology, and etching technology has been proposed. In such a manufacturing method, a metal film formed by vacuum deposition is processed by photolithography technology, gate electrodes and source / drain electrodes are formed, and an insulating layer and an organic semiconductor layer are also formed by vacuum deposition. Is called. By using this manufacturing method, an organic transistor element with high performance can be manufactured with good reproducibility (see, for example, Patent Document 1).

Recently, an attempt has been made to produce an insulating layer and an organic semiconductor layer under atmospheric pressure by using a solution process. Further, an attempt has been made to produce a gate electrode, a source / drain electrode by a solution process. Yes. In such a manufacturing method, for example, a conductive polymer solution is printed by an ink jet method to manufacture a gate electrode and a source / drain electrode. Therefore, it is possible to manufacture a device at low cost (see, for example, Patent Document 2 and Patent Document 3).
JP-A-5-55568 Special table 2003-518756 Special table 2003-518754

  An object of the present invention is to provide an organic electrical device in which peeling and deterioration between organic compound layers are suppressed, and a method for manufacturing the same, as compared with a case where organic compound layers are directly laminated without using a specific intermediate layer.

The above problem is solved by the following means. That is, the present invention
The invention according to claim 1
A first organic compound layer;
A second organic compound layer formed on the first organic compound layer;
The first organic compound layer and the coating solution containing an organic material that dissolves in a solvent for forming the second organic compound layer and a solvent that dissolves a material that constitutes the first organic compound layer. An intermediate layer formed between the second organic compound layers;
An organic electrical device comprising:

The invention according to claim 2
The organic electrical device is an organic transistor element having an organic semiconductor layer as the first organic compound layer and an insulating layer as the second organic compound layer,
The organic semiconductor layer and the insulating layer are coated with a coating liquid that includes an organic material that dissolves in a solvent for forming the insulating layer and a solvent that dissolves the material that forms the organic semiconductor layer. The organic electrical device according to claim 1, wherein the organic electrical device is an intermediate layer formed between the two.

The invention according to claim 3
The organic electrical device is an organic transistor element having an insulating layer as the first organic compound layer and an organic semiconductor layer as the second organic compound layer,
The insulating layer and the organic semiconductor layer are formed of a coating liquid that includes an organic material that dissolves in a solvent for forming the organic semiconductor layer and a solvent that dissolves the material that forms the insulating layer. The organic electrical device according to claim 1, wherein the organic electrical device is an intermediate layer formed between the two.

The invention according to claim 4
The organic electrical device according to claim 2, wherein the organic material is an insulating material.

The invention according to claim 5
The organic electrical device is an organic electroluminescent element having a hole transport layer as the first organic compound layer and a light emitting layer as the second organic compound layer,
The intermediate layer is formed of a coating solution containing an organic material that dissolves in a solvent for forming the light-emitting layer and a solvent that dissolves a material that forms the hole transport layer, and the hole transport layer and the The organic electrical device according to claim 1, wherein the organic electrical device is an intermediate layer formed between the light emitting layer and the light emitting layer.

The invention according to claim 6
The organic electrical device is an organic electroluminescent element having a light emitting layer as the first organic compound layer and an electron transport layer as the second organic compound layer,
The light emitting layer and the electron transport layer are formed by a coating liquid in which the intermediate layer includes an organic material that dissolves in a solvent for forming the electron transport layer and a solvent that dissolves a material that constitutes the light emitting layer. The organic electrical device according to claim 1, wherein the organic electrical device is an intermediate layer formed between the two.

The invention according to claim 7 provides:
Forming a first organic compound layer;
Forming a second organic compound layer on the first organic compound layer;
The first organic compound layer and the coating solution containing an organic material that dissolves in a solvent for forming the second organic compound layer and a solvent that dissolves a material that constitutes the first organic compound layer. Forming an intermediate layer between the second organic compound layers;
A method for producing an organic electrical device, comprising:

The invention according to claim 8 provides:
The method for producing an organic electrical device is a method for producing an organic transistor element, comprising: a step of forming an organic semiconductor layer as the first organic compound layer; and a step of forming an insulating layer as the second organic compound layer.
In the step of forming the intermediate layer, the organic semiconductor layer is formed of a coating solution containing an organic material that dissolves in a solvent for forming the insulating layer and a solvent that dissolves the material constituting the organic semiconductor layer. The method of manufacturing an organic electrical device according to claim 7, wherein an intermediate layer is formed between the insulating layer and the insulating layer.

The invention according to claim 9 is:
The method for producing an organic electrical device is a method for producing an organic transistor element, comprising a step of forming an insulating layer as the first organic compound layer, and a step of forming an organic semiconductor layer as the second organic compound layer.
The step of forming the intermediate layer includes a coating liquid containing an organic material that dissolves in a solvent for forming the organic semiconductor layer and a solvent that dissolves a material constituting the insulating layer, and the insulating layer and The method of manufacturing an organic electrical device according to claim 7, wherein the method is a step of forming an intermediate layer between the organic semiconductor layer and the organic semiconductor layer.

The invention according to claim 10 is:
The method of manufacturing an organic electrical device according to claim 8, wherein the organic material is an insulating material.

The invention according to claim 11 is:
The method for manufacturing an organic electroluminescent device includes: a step of forming a hole transport layer as the first organic compound layer; and a step of forming a light emitting layer as the second organic compound layer. And
The hole transport layer includes a coating liquid containing an organic material that dissolves in a solvent for forming the light-emitting layer and a solvent that dissolves a material constituting the hole transport layer. The method for producing an organic electrical device according to claim 7, wherein an intermediate layer is formed between the light emitting layer and the light emitting layer.

The invention according to claim 12
The method for producing an organic electrical device is a method for producing an organic electroluminescent device, comprising: forming a light emitting layer as the first organic compound layer; and forming an electron transport layer as the second organic compound layer. Yes,
The step of forming the intermediate layer comprises a coating liquid containing an organic material that dissolves in a solvent for forming the electron transport layer and a solvent that dissolves a material constituting the light emitting layer, and the light emitting layer The method of manufacturing an organic electrical device according to claim 7, wherein the method is a step of forming an intermediate layer between the electron transport layer and the electron transport layer.

The invention according to claim 13 is:
13. The method of manufacturing an organic electrical device according to claim 7, wherein the step of forming the intermediate layer is a step of spraying the coating liquid to form the intermediate layer.

The invention according to claim 14 is:
The method for producing an organic electrical device according to claim 13, wherein the solvent of the coating solution is a solvent having a boiling point of 100 ° C. or higher.

The invention according to claim 15 is:
The method of manufacturing an organic electrical device according to claim 7, wherein the step of forming each layer is performed in a nitrogen atmosphere.

According to the first aspect of the present invention, there is provided an organic electrical device in which peeling and deterioration between organic compound layers are suppressed as compared with a case where organic compound layers are directly laminated without using a specific intermediate layer.
According to the second aspect of the present invention, it is possible to suppress peeling and deterioration between the organic semiconductor layer and the insulating layer as compared with a case where the organic semiconductor layer and the insulating layer are sequentially laminated directly without using a specific intermediate layer. An organic transistor device is provided.
According to the invention of claim 3, peeling and deterioration between the organic semiconductor layer and the insulating layer are suppressed as compared with the case where the insulating layer and the organic semiconductor layer are sequentially laminated directly without using a specific intermediate layer. An organic transistor device is provided.
According to the invention which concerns on Claim 4, the organic transistor element which suppressed peeling and deterioration between an organic-semiconductor layer and an insulating layer is suppressed, suppressing the reduction | decrease of an electrical property.
According to the fifth aspect of the present invention, it is possible to suppress peeling and deterioration between the hole transport layer and the light emitting layer as compared with the case where the hole transport layer and the light emitting layer are sequentially laminated directly without using a specific intermediate layer. An organic electroluminescent device is provided.
According to the invention of claim 6, an organic compound that suppresses peeling and deterioration between the light emitting layer and the electron transport layer as compared with a case where the light emitting layer and the electron transport layer are sequentially laminated directly without using a specific intermediate layer. An electroluminescent device is provided.
According to the invention which concerns on Claim 7, compared with the case where an organic compound layer is directly laminated | stacked not via a specific intermediate | middle layer, the organic electrical device which suppressed peeling and deterioration between organic compound layers is obtained.
According to the eighth aspect of the present invention, the organic semiconductor layer and the insulating layer can be prevented from being peeled off or deteriorated compared to the case where the organic semiconductor layer and the insulating layer are sequentially laminated directly without using a specific intermediate layer. A transistor element is obtained.
According to the invention of claim 9, it is possible to suppress peeling and deterioration between the organic semiconductor layer and the insulating layer as compared with the case where the insulating layer and the organic semiconductor layer are sequentially and directly stacked without using a specific intermediate layer. An organic transistor element is obtained.
According to the invention concerning Claim 10, the organic transistor element which suppressed peeling and deterioration between an organic-semiconductor layer and an insulating layer, suppressing the reduction | decrease in an electrical property is obtained.
According to the eleventh aspect of the present invention, it is possible to suppress peeling and deterioration between the hole transport layer and the light emitting layer as compared with the case where the hole transport layer and the light emitting layer are sequentially laminated without using a specific intermediate layer. The obtained organic electroluminescent element is obtained.
According to the invention of claim 12, compared to the case where the light emitting layer and the electron transport layer are sequentially laminated directly without using a specific intermediate layer, the organic material that suppresses peeling and deterioration between the light emitting layer and the electron transport layer is suppressed. An electroluminescent element is obtained.
According to the thirteenth aspect of the present invention, an organic electrical device can be obtained in which peeling and deterioration between organic compound layers are suppressed as compared with other forming methods.
According to the invention which concerns on Claim 14, compared with the case where another solvent is used, the organic electrical device which suppressed peeling and deterioration between organic compound layers is obtained.
According to the invention which concerns on Claim 15, the organic electrical device which suppressed peeling and deterioration between organic compound layers compared with the case where each layer was formed in other atmosphere is obtained.

  Embodiments of the present invention will be described in detail with reference to the drawings. In addition, the same code | symbol is provided to the member which has the substantially same function throughout all the drawings, and the overlapping description may be abbreviate | omitted.

(First embodiment)
FIG. 1 is a schematic configuration diagram illustrating an organic transistor element according to the first embodiment. FIG. 2 is a schematic configuration diagram illustrating an organic transistor element according to another first embodiment.

  As shown in FIG. 1, the organic transistor element 100 according to the first embodiment has a source electrode 12 </ b> A and a drain electrode 12 </ b> B disposed on a substrate 10. The organic semiconductor layer 12, the intermediate layer 14A, and the insulating layer 16 are sequentially and directly stacked so as to cover the source electrode 12A and the drain electrode 12B formed on the substrate 10. That is, the intermediate layer 14 </ b> A is disposed between the organic semiconductor layer 12 and the insulating layer 16. A gate electrode 18 is disposed on the insulating layer 16.

  In the case of this embodiment, the intermediate layer 14 </ b> A is formed of a coating liquid that includes an organic material that dissolves in the solvent for forming the insulating layer 16 and a solvent that dissolves the material that forms the organic semiconductor layer 12. It becomes.

  Further, the organic transistor element 100 according to the first embodiment is not limited to the above configuration, and a gate electrode 18 is disposed on the substrate 10 as shown in FIG. Covering the gate electrode 18 formed on the substrate 10, the insulating layer 16, the intermediate layer 14B, and the organic semiconductor layer 12 are sequentially laminated in sequence. That is, the intermediate layer 14 </ b> B is disposed between the insulating layer 16 and the organic semiconductor layer 12. A gate electrode 18 is disposed on the insulating layer 16.

  In the case of this embodiment, the intermediate layer 14B is formed of a coating solution that includes an organic material that dissolves in the solvent for forming the organic semiconductor layer 12 and a solvent that dissolves the material that forms the insulating layer 16. It becomes.

That is, in the organic transistor element according to the present embodiment, an organic material that dissolves in a solvent for forming the upper second organic compound layer to be stacked, and a material that constitutes the lower first organic compound layer to be stacked. The intermediate layers 14A and 14B are disposed between the first organic compound layer and the second organic compound layer by a coating solution containing a dissolving solvent. When the intermediate layers 14A and 14B are formed on the lower first organic compound layer, the surface layer of the first organic compound layer is made of a coating solution for forming the intermediate layers 14A and 14B. The intermediate layers 14A and 14B are formed while being dissolved by the solvent.
On the other hand, when the upper second organic compound layer is formed on the intermediate layers 14A and 14B, the material constituting the layer (organic material) forms the second organic compound layer on the surface layer of the intermediate layers 14A and 14B. The second organic compound layer is formed while being dissolved by the solvent of the coating liquid for the purpose.

  Here, not only the organic transistor element but also an organic electric device such as an organic electroluminescent element having a stacked structure using an organic compound, it is necessary to stack organic compound layers having different functions. For this reason, since the upper layer and the lower layer in the organic compound layers having different functions are formed separately, for example, when heat or mechanical stress is repeatedly applied, peeling occurs between those layers.

  However, by interposing the intermediate layers 14A and 14B, the first organic compound layer and the second organic compound layer are stacked with good adhesion, and peeling and deterioration between the organic compound layers are suppressed, thereby improving the reliability. As a result, the organic semiconductor layer and the insulating layer are either in the form in which the insulating layer and the organic semiconductor layer are sequentially laminated (top gate structure) or in the form in which the organic semiconductor layer and the insulating layer are sequentially laminated (bottom gate structure). Suppressing and degrading between.

  Here, dissolution means that at least 0.1 wt% or more of the organic material is dissolved in the solvent.

  Hereinafter, the manufacturing method of the organic transistor element according to the present embodiment will be described in detail. FIG. 3 is a process diagram showing the method of manufacturing the organic transistor element according to the first embodiment. 3 is a process diagram for manufacturing the configuration of the organic transistor element shown in FIG.

  First, as shown in FIG. 3A, a substrate 10 is prepared. Then, the source electrode 12A and the drain electrode 12B are formed on the substrate 10 by patterning.

  Here, as the substrate 10, a silicon single crystal substrate (for example, a silicon single crystal substrate doped with phosphorus or the like at a high concentration), a glass substrate, a plastic substrate (for example, polycarbonate resin, polyester resin, methacrylic resin, acrylic resin, polychlorinated resin) Vinyl resin, cellulose resin, urethane resin, epoxy resin, police styrene resin, polyvinyl acetate resin, styrene butadiene copolymer, vinyl chloride-acrylonitrile copolymer, vinyl chloride-vinyl acetate-maleic anhydride copolymer, or silicon resin Etc.), but is not limited to this.

Examples of the material constituting the source electrode 12A and the drain electrode 12B include materials that can inject charges, and specifically include metals, metal oxides, conductive polymers, and the like.
Examples of the metal include metal (platinum (Pt), gold (Au), palladium (Pd), chromium (Cr), nickel (Ni), aluminum (Al), silver (Ag), tantalum (Ta), tungsten ( W), copper (Cu), titanium (Ti), indium (In), tin (Sn), iron (Fe), zinc (Zn), magnesium (Mg), etc.), alloys containing these metal elements, these And conductive particles of an alloy containing these metals.
Examples of the metal oxide include metal oxides such as lithium oxide, magnesium oxide, aluminum oxide, indium tin oxide (ITO), tin oxide (NESA), indium oxide, zinc oxide, and indium zinc oxide.
Examples of conductive polymers include poly (3,4-ethylenedioxythiophene) / polystyrene sulfonic acid [PEDOT / PSS], polyaniline, polyaniline, polythiophene, polythiophene derivatives, polypyrrole, polypyridine, or polyethylenedioxythiophene and polystyrene sulfonic acid. And organic materials such as complexes of

  The source electrode 12A and the drain electrode 12B may have a stacked structure of layers containing the above materials.

  Here, from the viewpoint of reducing the difference in ionization potential between the material used for the source electrode 12A and the drain electrode 12B and the organic compound used for the organic semiconductor layer 12 and improving the charge injection characteristics, the source electrode 12A and the drain electrode 12B. The difference between the ionization potential of the material used for at least one of the above and the organic compound used for the organic semiconductor layer 12 is preferably within 1.0 eV, and more preferably within 0.5 eV. Further, from the viewpoint of reducing the difference in ionization potential between the electrode and the organic compound, it is particularly preferable to use Au as at least one constituent material of the source electrode 12A and the drain electrode 12B.

  Although the source electrode 12A and the drain electrode 12B are formed by a material constituting them, a physical vapor deposition method (PVD) method exemplified by a vacuum deposition method or a sputtering method; an organic metal compound chemical vapor deposition method ( Various chemical vapor deposition (CVD) methods including MOCVD); lift-off method; shadow mask method; plating method using electrolytic plating method, electroless plating method or a combination thereof; or coating liquid (liquid material) Examples of the method include a combination of any one of a spin coating method, an ink jet method, a spray method, an electrospray method, and the like and a patterning technique as required.

  Next, as shown in FIG. 3B, the organic semiconductor layer 12 is formed so as to cover the source electrode 12A and the drain electrode 12B. Examples of the organic semiconductor material constituting the organic semiconductor layer 12 include low-molecular organic semiconductor materials (naphthalene, anthracene, tetracene, pentacene, hexacene, phthalocyani, perylene, hydrazone, triphenylmethane, diphenylmethane, stilbene, arylvinyl, pyrazoline, Triphenylamine, triarylamine, oligothiophene, phthalocyanine, or derivatives thereof), or a polymer organic semiconductor material (poly-N-vinylcarbazole, polyvinylbilene, polyvinylanthracene, polythiophene, polyalkylthiophene, polyhexylthiophene, Poly (p-phenylene vinylene), polytinylene vinylene, polyarylamine, bilen formaldehyde resin, ethyl carbazole formaldehyde resin, fluorene -Butthiophene copolymer, fluorene-arylamine copolymer, or derivatives thereof). In particular, it is preferable to use a material mainly composed of a high-molecular organic semiconductor material, but is not limited thereto. .

  The method for forming the organic semiconductor layer 12 depends on the material constituting the source electrode 12A and the drain electrode 12B, but a physical vapor deposition method (PVD) method exemplified by a vacuum deposition method; Various chemical vapor deposition (CVD) methods including chemical vapor deposition (MOCVD); lift-off method; shadow mask method; or a method of applying a coating liquid (liquid material), spin coating method, ink jet method , A spray method, an electrospray method, and the like, and a combination of a patterning technique as necessary.

  Next, as illustrated in FIG. 3C, the intermediate layer 14 </ b> A is formed over the organic semiconductor layer 12. Examples of the organic material forming the intermediate layer 14A include a material that dissolves in a solvent of a coating solution for forming the upper layer (the insulating layer 16 in the present manufacturing method). Among the materials, an insulating material is preferable. Specific materials for forming the intermediate layer 14A include the same materials as those for the insulating layer 16 described later.

Here, examples of combinations of the organic material (insulating material) forming the intermediate layer 14A and the solvent of the coating solution for forming the upper layer (insulating layer 16) are as follows.
-Organic material (insulating material) for forming the intermediate layer 14A / Solvent of coating solution for forming the upper layer (insulating layer 16)-
・ Polycarbonate / chloroform / polystyrene / cyclohexanone / polyester / cyclopentanone / acrylic resin / monochlorobenzene

  As a method of forming the intermediate layer 14A, as a method of applying a coating liquid (liquid material), any one of a spin coating method, an ink jet method, a spray method, an electrospray method, etc., and a combination of a patterning technique as required Is mentioned. Among these, it employ | adopts as the method of spraying and forming a coating liquid, such as a spray method or an electrospray method. By adopting the technique of spraying and forming the coating liquid, the intermediate layer 14A can be formed without dissolving the constituent material of the lower layer (organic semiconductor layer 12), and compared with other forming techniques, the organic compound layer ( The peeling and deterioration of the organic semiconductor layer and the insulating layer) are suppressed, and the reliability is improved.

  The coating liquid for forming the intermediate layer 14A includes an organic material (for example, an insulating material) that forms the intermediate layer 14A and a solvent that dissolves or disperses the organic material. As the said solvent, what melt | dissolves the material (organic-semiconductor material) which comprises a lower layer (in this manufacturing method, the organic-semiconductor layer 12) is mentioned.

Here, an example of a combination of the solvent of the coating solution for forming the intermediate layer 14A and the organic semiconductor material constituting the lower layer (organic semiconductor layer 12) is as follows.
-Organic semiconductor material constituting solvent / lower layer (organic semiconductor layer 12) of coating solution to form intermediate layer 14A-
Compound (I-1) / monochlorobenzene Compound (I-2) / cyclohexanone Compound (I-3) / tetrahydrofuran Compound (I-6) / monochlorobenzene

Next, as illustrated in FIG. 3D, the insulating layer 16 is formed over the intermediate layer 14A.
As the insulating material constituting the insulating layer 16, polycarbonate resin, polyester resin, methacrylic resin, acrylic resin, polyvinyl chloride resin, cellulose resin, urethane resin, epoxy resin, polystyrene resin, polyvinyl acetate resin, styrene butadiene copolymer, Examples thereof include, but are not limited to, vinylidene chloride-acrylonitrile copolymer, vinyl chloride-vinyl acetate-maleic anhydride copolymer, or a polymer such as silicone resin.

  Examples of the method for forming the insulating layer 16 include a combination of any one of a spin coating method, an ink jet method, a spray method, an electrospray method, and the like and a patterning technique as required. Among these, it employ | adopts as the method of spraying and forming a coating liquid, such as a spray method or an electrospray method. By adopting the method of spraying and forming the coating liquid, the insulating layer 16 can be formed without dissolving the constituent material of the lower layer (intermediate layer 14A), and compared with other forming methods, the organic compound layer (organic) The semiconductor layer and the insulating layer are prevented from being peeled off and deteriorated, and the reliability is improved.

  The coating liquid for forming the insulating layer 16 includes an insulating material and a solvent that dissolves or disperses the insulating material. Examples of the solvent include those that dissolve the material (insulating material) constituting the lower layer (intermediate layer 14A).

  Next, as illustrated in FIG. 3E, the gate electrode 18 is formed over the insulating layer 16. The gate electrode 18 is formed by the same constituent material and formation method as the source electrode 12A and the drain electrode 12B.

  Here, although not shown, a protective layer may be provided so as to cover the insulating layer 16 and the gate electrode 18 in order to prevent deterioration of the organic semiconductor transistor element due to moisture or oxygen. Specific materials for the protective layer include metals such as In, Sn, Pb, Au, Cu, Ag, and Al, metal oxides such as MgO, SIO2, and TIO2, and resins such as polyethylene resin, polyurea resin, and polyimide resin. Can be mentioned. For forming the protective layer, a vacuum deposition method, a sputtering method, a plasma polymerization method, a CVD method, or a coating method is applied.

  In the method for manufacturing the organic transistor element according to the present embodiment, the structure (gate top structure) shown in FIG. 1, that is, the organic semiconductor layer 12, the intermediate layer 14A, and the insulating layer 16 are sequentially stacked is shown. However, in the case of the structure shown in FIG. 2 (gate bottom structure), the insulating layer 16, the intermediate layer 14B, and the organic semiconductor layer 12 are sequentially stacked.

  In the case of the structure shown in FIG. 2 (gate bottom structure), the organic material for forming the intermediate layer 14B includes a material that dissolves in the solvent of the coating solution for forming the upper layer (the organic semiconductor layer 12 in this manufacturing method). .

Here, examples of combinations of the organic material (insulating material) for forming the intermediate layer 14B and the solvent of the coating solution for forming the upper layer (organic semiconductor layer 12) are as follows.
-Organic material (insulating material) for forming intermediate layer 14B / Solvent of coating solution for forming upper layer (organic semiconductor layer 12)-
・ Polycarbonate / chloroform / polystyrene / cyclohexanone / polyester / cyclopentanone / acrylic resin / monochlorobenzene

  The coating liquid for forming the organic semiconductor layer 12 as an upper layer includes an organic semiconductor material and a solvent that dissolves or disperses the organic semiconductor material. Examples of the solvent include those that dissolve the material (insulating material) constituting the lower layer (intermediate layer 14B). Specific examples of the solvent include the same materials as the solvent of the coating solution for forming the insulating layer 16 described above.

  And as a method of forming the organic semiconductor layer 12 as an upper layer, a combination of any one of a spin coating method, an ink jet method, a spray method, an electrospray method, and the like, and a patterning technique as required can be mentioned. Among these, it employ | adopts as the method of spraying and forming a coating liquid, such as a spray method or an electrospray method. By adopting a method of forming by spraying the coating liquid, the organic semiconductor layer 12 can be formed without dissolving the constituent material of the lower layer (intermediate layer 14B). Compared to other forming methods, the organic compound layer ( The peeling and deterioration of the organic semiconductor layer and the insulating layer) are suppressed, and the reliability is improved.

Here, an example of the combination of the solvent of the coating solution for forming the intermediate layer 14B and the insulating material constituting the lower layer (insulating layer 16) is as follows.
-Insulating material constituting solvent / lower layer (insulating layer 16) of coating solution for forming intermediate layer 14B-
・ Polycarbonate / chloroform / polystyrene / cyclohexanone / polyester / cyclopentanone / acrylic resin / monochlorobenzene

  In the manufacturing method of the organic transistor element according to the present embodiment described above, the organic semiconductor layer 12, the intermediate layer 14A, and the insulating layer 16 (reverse insulating layer 16, intermediate layer 14B, and organic semiconductor layer 12) are applied to the coating liquid. The film may be continuously formed by a method (spraying method, electrospraying method, etc.) for spraying in a mist form. Examples of the solvent for the coating solution used in this method include inorganic solvents (nitric acid, sulfuric acid, ammonia, hydrogen peroxide, carbon disulfide, carbon tetrachloride, ethylene carbonate, etc.), ketone solvents (methyl ethyl ketone, acetone, diethyl ketone, methyl). Isobutyl ketone, methyl isopropyl ketone, or dicyclohexanone), alcohol solvents (methanol, ethanol, isopropanol, ethylene glycol, diethylene glycol, glycerin, etc.), ether solvents (diethyl ether, diisopropyl ether, tetrahydrofuran, dioxane, anisole, diethylene glycol) Dimethyl ether or diethylene glycol ethyl ether), cellosolve solvent (meryl cellosolve, ethyl cellosolve, phenyl cellosolve, etc.), fat Hydrocarbon solvents (hexane, heptane, pentane, heptane, cyclohexane, etc.), aromatic hydrocarbon solvents (toluene, xylene, benzene, etc.), amide solvents (pyridine, pyrazine, furan, pyrrole, amide, etc.) , Halogen compound solvents (monochlorobenzene, dichloromethane, chloroform, 1,2-dichloroethane, etc.), ester solvents (ethyl acetate, methyl acetate, ethyl formate, etc.), sulfur compound solvents (dimethyl sulfoxide, sulfolane, etc.) , Various organic solvents such as nitrile solvents (acetonitrile, propionitrile, acrylonitrile, etc.), organic acid solvents (formic acid, acetic acid, trichloroacetic acid, trifluoroacetic acid, etc.), or mixed solvents containing these. However, it is not limited to this. From these, a desired solvent is selected.

  In particular, as a solvent used for the method of forming by spraying a coating solution, a solvent that does not easily evaporate is preferable because it requires time for film formation, that is, a solvent having a higher boiling point is preferable. For example, the boiling point is preferably 100 ° C. or higher, more preferably 130 ° C. or higher. By using the solvent, each layer is formed while the solvent reaches the lower layer and dissolves. Therefore, peeling and deterioration of the organic compound layer (organic semiconductor layer and insulating layer) compared to the case of using other solvents. And the reliability is improved.

  In the method for manufacturing an organic transistor element according to this embodiment, each layer is preferably formed in a nitrogen atmosphere. In particular, when the intermediate layers 14A and 14B and the upper layer thereof are formed by a method (spray method, electrospray method, or the like) in which the coating liquid is sprayed in a mist, it is preferably performed in a nitrogen atmosphere. Thereby, compared with the case where each layer is formed in another atmosphere, peeling and deterioration between organic compound layers are suppressed, and reliability is improved.

In the organic transistor element according to the present embodiment, the on / off ratio is within the range of about 10 ^{2 to} 10 ⁵ by selecting the type of organic semiconductor material used in the organic semiconductor layer, the element configuration, and the like. It adjusts according to the use of an organic transistor element.

(Second Embodiment)
FIG. 4 is a schematic configuration diagram illustrating an organic electroluminescent element according to the second embodiment. FIG. 5 is a schematic configuration diagram illustrating an organic electroluminescent element according to another second embodiment. FIG. 6 is a schematic configuration diagram illustrating an organic electroluminescent element according to another second embodiment.

  As shown in FIG. 4, the organic electroluminescent device 200 according to the second embodiment has a transparent electrode 22 (anode), a hole injection layer 24, a hole transport layer 26 (second organic layer) on a transparent insulator substrate 20. The compound layer), the intermediate layer 28A, the light emitting layer 30 (first organic compound layer), and the back electrode 34 (cathode) are sequentially laminated. The intermediate layer 28A disposed between the hole transport layer 26 and the light emitting layer 30 includes an organic material that dissolves in the solvent for forming the light emitting layer 30 and the hole transport layer 26. It is formed of a coating solution containing a solvent for dissolving the constituent materials.

  The organic electroluminescent element 200 according to the present embodiment is not limited to the above configuration, and as shown in FIG. 5, for example, on a transparent insulator substrate 20, a transparent electrode 22 (anode), a hole injection layer 24, a light emitting layer. 30 (first organic compound layer), intermediate layer 28B, electron transport layer 32 (second organic compound layer), and back electrode 34 (cathode) are sequentially laminated. In the case of this embodiment, the intermediate layer 28 </ b> B disposed between the electron transport layer 32 and the light emitting layer 30 emits light and an organic material that dissolves in the solvent for forming the electron transport layer 32. It is formed of a coating solution containing a solvent that dissolves the material constituting the layer 30.

  Of course, as shown in FIG. 6, the organic electroluminescent device 200 according to the present embodiment has a transparent electrode 22, a hole injection layer 24, a hole transport layer 26, an intermediate layer 28 </ b> A, a light emission on a transparent insulator substrate 20. The layer 30, the intermediate layer 28B, the electron transport layer 32, and the back electrode 34 are sequentially stacked. And it is good also as intermediate | middle layer 28A, 28B of the structure similar to FIG.4 and FIG.5.

  On the other hand, the display device according to the present embodiment is connected to the organic electroluminescent element 200 and a pair of electrodes (transparent electrode 22 and back electrode 34) of the organic electroluminescent element 200, and a DC voltage is applied between the pair of electrodes. The thing provided with the voltage application apparatus 40 for applying as a drive means is mentioned.

As a driving method of the organic electroluminescent element 200 using the voltage application device 40, for example, a direct current voltage of 4 mA to 20 V and a current density of 1 mA / cm ^{2 to} 200 mA / cm ² is applied between a pair of electrodes. As a result, the organic electroluminescent device 200 emits light.

  In addition, the organic electroluminescent element 200 according to the present embodiment has been described with respect to the configuration of the minimum unit (one pixel unit). For example, the one pixel unit (organic electroluminescent element) is at least one of a matrix shape and a segment shape. It is applied to the arranged display device. When the organic electroluminescent elements 200 are arranged in a matrix, the electrodes may be arranged in a matrix, or both the electrodes and the organic compound layer may be arranged in a matrix. Moreover, when arrange | positioning the organic electroluminescent element 200 in a segment form in this embodiment, the aspect which arrange | positions only an electrode in a segment form may be sufficient, and the aspect which arrange | positions both an electrode and an organic compound layer in a segment form. There may be.

  In addition, as a driving method of the display device according to the present embodiment, a conventionally known technique, for example, a plurality of row electrodes and column electrodes are arranged, and the row electrodes are scanned according to image information corresponding to each row electrode while being scanned. Simple matrix driving in which electrodes are driven collectively, active matrix driving using pixel electrodes arranged for each pixel, and the like are used.

  In the organic electroluminescent element 200 according to any of the above embodiments, an organic material that dissolves in a solvent for forming the upper second organic compound layer to be stacked and a lower first organic compound layer to be stacked are configured. The intermediate layers 28A and 28B are disposed between the first organic compound layer and the second organic compound layer by a coating liquid containing a solvent that dissolves the material.

  Therefore, as in the first embodiment, by interposing the intermediate layers 28A and 28B, the first organic compound layer and the second organic material layer are stacked with good adhesion, and the peeling and deterioration between the organic compound layers are suppressed. And reliability is improved. As a result, the light-emitting layer 30 and the charge transport layer (hole transport) can be used in any of the form in which the hole transport layer 26 and the light-emitting layer 30 are sequentially laminated or the form in which the light-emitting layer 30 and the electron transport layer 32 are sequentially laminated. The peeling and deterioration between the layer 26 and the electron transport layer 32) are suppressed, and the reliability is improved.

  Of course, other than between the light emitting layer 30 and the charge transport layer (the hole transport layer 26 and the electron transport layer 32), for example, between other organic compound layers such as between the hole injection layer 24 and the hole transport layer 26, An intermediate layer similar to the above may be provided.

  Next, it demonstrates in detail with the manufacturing method of the organic electroluminescent element which concerns on this embodiment.

  FIG. 7 is a process diagram illustrating a method for manufacturing an organic electroluminescent element according to the second embodiment. In addition, about the manufacturing method of the organic electroluminescent element which concerns on this embodiment, it shows about the manufacturing method of the organic electroluminescent element which has a layer structure shown in FIG.

First, as shown in FIG. 7A, a transparent insulator substrate 20 is prepared. Here, the transparent insulator substrate 20 is preferably a transparent substrate for taking out light emission, and a glass substrate, a plastic film substrate, or the like is used. Here, the term “transparent” means that the light transmittance in the visible region is 10% or more, and the transmittance is preferably 75% or more. The insulating property means that the volume resistivity is 10 ¹³ Ωcm or more. The same applies hereinafter.

  Next, as shown in FIG. 7B, a transparent electrode 22 is formed on the transparent insulator substrate 20. The transparent electrode 22 is transparent in order to extract emitted light in the same manner as the transparent insulator substrate 20, and preferably has a large work function for injecting holes. For example, an oxide film (for example, indium tin oxide (ITO)) is preferable. , Tin oxide (NESA), indium oxide, zinc oxide, or the like) or metal film (eg, gold, platinum, palladium, or the like) is preferably used. The transparent electrode 22 is formed by, for example, vapor deposition or sputtering.

  Next, as shown in FIG. 7C, a hole injection layer 24 is formed on the transparent insulator substrate 20 on which the transparent electrode 22 is formed. Examples of the hole injection material constituting the hole injection layer 24 include MTDATA (4,4 ′, 4 ″ -tris (3-methylphenylphenylamino) triphenylamine), copper phthalocyanine, polyaniline, PEDOT, (poly (Ethylenedioxythiophene), PSS (poly (styrene sulfonate)), or mixtures thereof are preferably used.

  Here, the hole injection layer 24 is formed by using a coating liquid containing a hole injection material and a solvent for dissolving or dispersing the hole injection material, for example, by forming the film using a spin coating method, a dip method, or the like. Is done.

  Next, as shown in FIG. 7D, a hole transport layer 26 is formed on the transparent insulator substrate 20 on which the hole injection layer 24 is formed. As the hole transport material constituting the hole transport layer 26, as the hole transport material, a tetraphenylenediamine derivative, a triphenylamine derivative, a carbazole derivative, a stilbene derivative, an aryl hydrazone derivative, a porphyrin-based compound, or the like is preferably used. . Particularly preferred specific examples include the following exemplary compounds (I-1) to (I-6). In (I-1) to (I-6), n represents an integer of 1 or more.

  Here, the hole transport layer 26 is formed by using a coating liquid containing a hole transport material and a solvent for dissolving or dispersing the hole transport material, for example, by forming the film by a spray method or an electrospray method. . Of course, the hole transport layer 26 may be formed by film formation using a spin coating method, a dip method or the like.

  Next, as shown in FIG. 7E, an intermediate layer 28A is formed on the transparent insulator substrate 20 on which the hole transport layer 26 is formed. Examples of the organic material forming the intermediate layer 28A include a material that dissolves in a solvent of a coating solution for forming the upper layer (the light emitting layer 30 in the present manufacturing method). Examples of the material include any of materials constituting the hole transport layer 26 (hole transport material) and materials constituting the light emitting layer 30 (light emitting material). Among these materials, the upper layer (the light emitting layer in the present manufacturing method). A material that is soluble in the solvent of the coating solution for forming 30) is selected.

Here, examples of combinations of the organic material forming the intermediate layer 28A and the solvent of the coating solution for forming the upper layer (the light emitting layer 30) are as follows.
-Organic material forming intermediate layer 28A / Solvent of coating solution for forming upper layer (light emitting layer 30)-
・ Polycarbonate / chloroform / polystyrene / cyclohexanone / polyester / cyclopentanone / acrylic resin / monochlorobenzene

  As a method for forming the intermediate layer 28A, as a method for applying a coating liquid (liquid material), any one of a spin coating method, an ink jet method, a spray method, an electrospray method, etc., and a combination of a patterning technique as required Is mentioned. Among these, it employ | adopts as the method of spraying and forming a coating liquid, such as a spray method or an electrospray method. By adopting a method of spraying and forming the coating liquid, the intermediate layer 28A can be formed without dissolving the constituent material of the lower layer (hole transport layer 26), and compared with other forming methods, the organic compound layer The peeling and deterioration of the (organic semiconductor layer and insulating layer) are suppressed, and the reliability is improved.

  The coating liquid for forming the intermediate layer 28A includes an organic material that forms the intermediate layer 28A and a solvent that dissolves or disperses the organic material. Examples of the solvent include those that dissolve the material (hole transport material) constituting the lower layer (the hole transport layer 26 in this production method).

Here, an example of the combination of the solvent of the coating solution for forming the intermediate layer 28A and the material constituting the lower layer (hole transport layer 26) is as follows.
-Solvent of coating solution / material constituting lower layer (hole transport layer 26) for forming intermediate layer 28A-
Compound (I-1) / monochlorobenzene Compound (I-2) / cyclohexanone Compound (I-3) / tetrahydrofuran

  Next, as shown in FIG. 7F, the light emitting layer 30 is formed on the transparent insulator substrate 20 on which the intermediate layer 28A is formed. Examples of the light-emitting material constituting the light-emitting layer 30 include compounds that exhibit a higher fluorescence quantum yield in the solid state than other states, such as a low-molecular light-emitting material or a polymer light-emitting material. Examples of the low-molecular light-emitting material include chelate-type organometallic complexes, polynuclear or condensed aromatic ring compounds, perylene derivatives, coumarin derivatives, styrylarylene derivatives, silole derivatives, oxazole derivatives, oxathiazole derivatives, or oxadiazole derivatives. Examples of the polymer light emitting material include polyparaphenylene derivatives, polyparaphenylene vinylene derivatives, polythiophene derivatives, and polyacetylene derivatives. Preferable specific examples include the following compounds (II-1) to (II-17), but are not limited thereto.

In the compounds (II-1) to (II-17), Ar is a substituted or unsubstituted phenyl group, a substituted or unsubstituted monovalent polynuclear aromatic hydrocarbon having 2 to 10 aromatic rings. Represents a monovalent condensed aromatic hydrocarbon having 2 or more and 10 or less substituted or unsubstituted aromatic rings, or a substituted or unsubstituted monovalent aromatic heterocyclic ring.
In the compounds (II-1) to (II-17), X represents a substituted or unsubstituted divalent aromatic group. Specifically, X is a substituted or unsubstituted phenylene group, a substituted or unsubstituted divalent polynuclear aromatic hydrocarbon having 2 to 10 aromatics, a substituted or unsubstituted aromatic group having 2 to 10 aromatics. A divalent condensed ring aromatic hydrocarbon, a substituted or unsubstituted divalent aromatic heterocyclic ring, or a substituted or unsubstituted divalent aromatic group containing at least one aromatic heterocyclic ring.
In compounds (II-1) to (II-17), n and x represent an integer of 1 or more, and y represents 0 or 1.

  The polynuclear aromatic hydrocarbon, condensed aromatic hydrocarbon, and aromatic heterocycle are not particularly limited. In addition, the polynuclear aromatic hydrocarbon, the condensed aromatic hydrocarbon, and the aromatic heterocycle in the present embodiment mean specifically defined as follows.

That is, the “polynuclear aromatic hydrocarbon” represents a hydrocarbon in which 2 to 10 aromatic rings composed of carbon and hydrogen are present and the rings are bonded to each other through a carbon-carbon bond. Specific examples include biphenyl and terphenyl.
“Condensed aromatic hydrocarbon” refers to a hydrocarbon in which two or more aromatic rings composed of carbon and hydrogen are present and the rings share a pair of carbon atoms. Specifically, naphthalene, anthracene, phenanthrene, fluorene, or the like can be given.
“Aromatic heterocycle” refers to an aromatic ring containing elements other than carbon and hydrogen. The aromatic heterocyclic ring includes both those in which an aromatic ring is substituted with a heterocyclic ring and those in which a heterocyclic ring is substituted with an aromatic ring. In addition, for the heterocyclic ring, the number of atoms (Nr) constituting the ring skeleton is preferably Nr = 5 and / or 6. Further, the type and number of atoms other than carbon atoms (heterogeneous atoms) constituting the ring skeleton are not particularly limited. For example, a sulfur atom, a nitrogen atom, an oxygen atom, a selenium atom, or a silicon atom is preferably used. Two or more types and / or two or more heteroatoms may be contained in the ring skeleton. In particular, as a heterocyclic ring having a 5-membered ring structure, thiophene, pyrrole, furan, selenophene, and silole, or a heterocyclic ring in which the 3- and 4-position carbons of the compound are replaced with nitrogen are preferably used. Pyridine is desirably used as the heterocyclic ring.

When each group selected as a structure representing Ar or X has a substituent, examples of the substituent include a hydrogen atom, an alkyl group, an alkoxyl group, an aryl group, an aralkyl group, a substituted amino group, and a halogen atom. .
The alkyl group preferably has 1 to 10 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group, an isopropyl group, and a tertiary butyl group.
As an alkoxyl group, a C1-C10 thing is desirable, for example, a methoxy group, an ethoxy group, a propoxy group, or an isopropoxy group etc. are mentioned.
As the aryl group, those having 6 to 20 carbon atoms are desirable, and examples thereof include a phenyl group and a toluyl group.
As the aralkyl group, those having 7 to 20 carbon atoms are desirable, and examples thereof include a benzyl group and a phenethyl group.
Examples of the substituent of the substituted amino group include an alkyl group, an aryl group, and an aralkyl group, and specific examples are as described above.
Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and among them, a fluorine atom is desirable.
A substituted or unsubstituted phenyl group, a substituted or unsubstituted aromatic monovalent aromatic hydrocarbon having 2 to 10 carbon atoms, and a substituted or unsubstituted monovalent aromatic heterocyclic ring are the same as described above. .

  When the light emitting material is a low molecular light emitting material, the light emitting layer 30 is preferably configured to include a binder resin. The light emitting layer 30 may be doped (doped) with a dye compound different from the light emitting material as a guest material in the light emitting material for the purpose of improving the durability of the organic electroluminescent device or improving the light emitting efficiency. The ratio of the addition (doping) of the dye compound in the light emitting layer 30 is, for example, about 0.001 to 40% by weight, desirably about 0.001 to 10% by weight. As the coloring compound used for this addition (doping), an organic compound that has good compatibility with the light emitting material and does not hinder the formation of a good thin film of the light emitting layer is used, and preferably 4-dicyanmethylene-2 -Methyl-6- (p2dimethylaminostyryl) -4H-pyran (DCM) derivative, quinacridone derivative, rubrene derivative, porphyrin or the like is used. Preferable specific examples include, but are not limited to, the following compounds (III-1) to (III-5).

  Examples of the method for forming the light emitting layer 30 include a combination of any one of a spin coating method, an ink jet method, a spray method, an electrospray method, and the like and a patterning technique as required. Among these, it employ | adopts as the method of spraying and forming a coating liquid, such as a spray method or an electrospray method. By adopting the method of spraying and forming the coating liquid, the light emitting layer 30 is formed without dissolving the constituent material of the lower layer (intermediate layer 28A) too much. The peeling and deterioration of the hole transport layer and the light emitting layer) are suppressed, and the reliability is improved.

  The coating liquid for forming the light emitting layer 30 includes a light emitting material, other additives (for example, a dye compound), and a solvent for dissolving or dispersing them. However, in the case where a low molecular light emitting material is used as the light emitting material, the coating liquid includes a binder resin. Examples of the solvent include those that dissolve the material constituting the lower layer (intermediate layer 28A).

  Next, as shown in FIG. 7G, an intermediate layer 28B is formed on the transparent insulator substrate 20 on which the light emitting layer 30 is formed. Examples of the organic material forming the intermediate layer 28B include a material that dissolves in the solvent of the coating solution for forming the upper layer (the electron transport layer 32 in the present manufacturing method). Examples of the material include any of materials that constitute the electron transport layer 32 (electron transport material) and materials that constitute the light emitting layer 30 (light emitting material), and among these, an upper layer (in this manufacturing method, the electron transport layer 32). A material that can be dissolved in a solvent of a coating solution for forming () is selected.

Here, examples of combinations of the organic material forming the intermediate layer 28 </ b> B and the solvent of the coating solution for forming the upper layer (electron transport layer 32) are as follows.
-Organic material for forming the intermediate layer 28B / Solvent of coating solution for forming the upper layer (electron transport layer 32)-
・ Polycarbonate / chloroform / polystyrene / cyclohexanone / polyester / cyclopentanone / acrylic resin / monochlorobenzene

  As a method for forming the intermediate layer 28B, as a method of applying a coating liquid (liquid material), any one of a spin coating method, an ink jet method, a spray method, an electrospray method, etc., and a combination of a patterning technique as required Is mentioned. Among these, it employ | adopts as the method of spraying and forming a coating liquid, such as a spray method or an electrospray method. By adopting the method of spraying and forming the coating liquid, the intermediate layer 28B can be formed without dissolving the constituent materials of the lower layer (light emitting layer 30), and compared with other forming methods, the organic compound layer (light emission) Layer) and the electron transport layer) are prevented from being peeled and deteriorated, and the reliability is improved.

  The coating liquid for forming the intermediate layer 28B includes an organic material that forms the intermediate layer 28B and a solvent that dissolves or disperses the organic material. Examples of the solvent include those that dissolve the material (the light emitting material or the binder resin thereof) constituting the lower layer (the light emitting layer 30 in the present manufacturing method).

Here, an example of the combination of the solvent of the coating solution for forming the intermediate layer 28 </ b> B and the material constituting the lower layer (light emitting layer 30) is as follows.
-Solvent of coating solution / material constituting lower layer (light emitting layer 30) for forming intermediate layer 28B-
Compound (II-16) / cyclohexanone
Compound (II-17) / monochlorobenzene

  Next, as shown in FIG. 7H, the electron transport layer 32 is formed on the transparent insulator substrate 20 on which the intermediate layer 28B is formed. As an electron transport material constituting the electron transport layer 32, an oxadiazole derivative, a nitro-substituted fluorenone derivative, a diphenoquinone derivative, a thiopyrandioxide derivative, or a fluorenylidenemethane derivative is preferably exemplified. Preferred specific examples include, but are not limited to, the following compounds (IV-1) to (IV-3).

  Examples of the method for forming the electron transport layer 32 include a combination of any one of a spin coating method, an ink jet method, a spray method, an electrospray method, and the like and a patterning technique as required. Among these, it employ | adopts as the method of spraying and forming a coating liquid, such as a spray method or an electrospray method. By adopting the method of spraying and forming the coating liquid, the light emitting layer 30 is formed without dissolving the constituent material of the lower layer (intermediate layer 28B), and compared with other forming methods, the organic compound layer (light emission) is formed. Layer) and the electron transport layer) are prevented from being peeled and deteriorated, and the reliability is improved.

  The coating liquid for forming the electron transport layer 32 includes an electron transport material and a solvent for dissolving or dispersing the electron transport material. Examples of the solvent include those that dissolve the material constituting the lower layer (intermediate layer 28B).

  Next, as shown in FIG. 7I, the back electrode 34 is formed on the transparent insulator substrate 20 on which the electron transport layer 32 is formed. The back electrode 34 is made of a metal having a low work function in order to inject electrons, and particularly preferably includes magnesium, aluminum, silver, indium, or an alloy thereof. The back electrode 34 is formed by, for example, vapor deposition or sputtering.

Although not shown, a protective layer may be formed on the back electrode 34 in order to prevent further deterioration of the element due to moisture or oxygen. Specific materials for the protective layer include metals (In, Sn, Pb, Au, Cu, Ag, Al, etc.), metal oxides (MgO, SiO ₂ , TiO ₂ etc.), or resins (polyethylene resin, Polyurea resin or polyimide resin). For the formation of the protective layer, for example, a vapor deposition method, a sputtering method, a plasma polymerization method, a CVD method, or a coating method is applied.

  In the method of manufacturing the organic electroluminescent element according to the present embodiment described above, the hole transport layer 26, the intermediate layer 28A, the light emitting layer 30, the intermediate layer 28B, and the electron transport layer 32 are sprayed with a coating liquid in a mist form. The film may be continuously formed by (spray method, electrospray method, etc.). Examples of the solvent for the coating solution used in this method include inorganic solvents (nitric acid, sulfuric acid, ammonia, hydrogen peroxide, carbon disulfide, carbon tetrachloride, ethylene carbonate, etc.), ketone solvents (methyl ethyl ketone, acetone, diethyl ketone, methyl). Isobutyl ketone, methyl isopropyl ketone, or dicyclohexanone), alcohol solvents (methanol, ethanol, isopropanol, ethylene glycol, diethylene glycol, glycerin, etc.), ether solvents (diethyl ether, diisopropyl ether, tetrahydrofuran, dioxane, anisole, diethylene glycol) Dimethyl ether or diethylene glycol ethyl ether), cellosolve solvent (meryl cellosolve, ethyl cellosolve, phenyl cellosolve, etc.), fat Hydrocarbon solvents (hexane, heptane, pentane, heptane, cyclohexane, etc.), aromatic hydrocarbon solvents (toluene, xylene, benzene, etc.), amide solvents (pyridine, pyrazine, furan, pyrrole, amide, etc.) , Halogen compound solvents (monochlorobenzene, dichloromethane, chloroform, 1,2-dichloroethane, etc.), ester solvents (ethyl acetate, methyl acetate, ethyl formate, etc.), sulfur compound solvents (dimethyl sulfoxide, sulfolane, etc.) , Various organic solvents such as nitrile solvents (acetonitrile, propionitrile, acrylonitrile, etc.), organic acid solvents (formic acid, acetic acid, trichloroacetic acid, trifluoroacetic acid, etc.), or mixed solvents containing these. However, it is not limited to this. From these, a desired solvent is selected.

  In particular, as a solvent used for the method of forming by spraying a coating solution, a solvent that does not easily evaporate is preferable because it requires time for film formation, that is, a solvent having a higher boiling point is preferable. For example, the boiling point is preferably 100 ° C. or higher, more preferably 130 ° C. or higher. By using the solvent, each layer is formed while the solvent reaches the lower layer and is dissolved. Therefore, compared to the case of using another solvent, the organic compound layer (hole transport layer, light emitting layer, and electron transport layer) is used. ), And the reliability is improved.

  Moreover, in the method for manufacturing the organic electroluminescent element according to the present embodiment, each layer is preferably formed in a nitrogen atmosphere. In particular, when the intermediate layers 28A and 28B and the upper layer thereof are formed by a method (spray method, electrospray method, or the like) in which the coating liquid is sprayed in the form of a mist, it is preferably performed in a nitrogen atmosphere. Thereby, compared with the case where each layer is formed in another atmosphere, peeling and deterioration between organic compound layers are suppressed, and reliability is improved.

  In the organic transistor element and the organic electroluminescent element according to the present embodiment described above, the configuration of one element unit (minimum unit: one pixel unit in the case of a light emitting element) has been described. Are patterned (for example, patterned in a matrix shape or a segment shape). In this patterning, an organic electroluminescent element is disposed (patterned) using a mask in which an opening pattern is provided in a region where the element is to be formed.

  Specifically, for example, in the case of an organic transistor element, after a mask is stacked on the substrate 10 on which the source electrode 12A and the drain electrode 12B are formed, an element constituent layer (the organic semiconductor layer 12 and the organic semiconductor layer 12 and An insulating layer 16) is formed, and then a gate electrode 18 is formed. Thereby, a patterned organic transistor element is obtained.

  On the other hand, in the case of an organic electroluminescent element, after laminating a mask on the transparent insulator substrate 20 on which the transparent electrode 22 is formed, an element constituting layer (for example, a hole injection layer 24, a hole transport layer) is formed in the opening pattern of the mask. Layer 26, light emitting layer 30, and electron transport layer 32) are sequentially stacked. Thereafter, the back electrode 34 is formed. Thereby, the patterned organic electroluminescent element is obtained.

  Here, it is preferable that the mask to be used be in electrostatic contact with the substrate to be stacked. For this reason, it is good to employ | adopt an insulating mask as a mask. By electrostatically adhering the mask to the substrate, the solvent of the coating liquid for forming each constituent layer penetrates between the mask and the substrate, that is, the occurrence of bleeding due to the solvent is suppressed, and Fine patterning is realized at low cost and systematically.

  Examples of a technique for electrostatically adhering the mask to the substrate include a technique in which the mask is laminated on the substrate and then exposed to an electric field. Specifically, for example, a technique in which corona discharge is applied and charging is performed. There is a method of bringing a roller into contact with charging, but the method is not limited thereto.

  Examples of the material constituting the insulating mask to be used include glass, quartz, phenol resin, epoxy resin, polycarbonate resin, acrylic resin, and silicon nitride.

  In the present embodiment, the organic transistor element and the organic electroluminescent element have been described as organic electric devices. However, the present invention is not limited to this, and at least the first organic compound layer and the second organic compound layer are not limited thereto. Any organic electrical device having a layer structure in which the above two layers are laminated, for example, an organic solar cell, a sensor, or the like may be applied.

  The following examples illustrate the invention. In addition, this invention is not limited only by these Examples.

[Example A]
An organic transistor element was produced as shown below.

(Example A1)
Gold was formed into a film by vacuum deposition on a polyethylene terephthalate (PET) substrate having a thickness of 1.0 mm to form a source electrode and a drain electrode. Next, 1% by weight of poly (3-hexylthiophene) is dissolved in chloroform (boiling point: 61.7 ° C.) on the source / drain electrodes, passed through a filter for removing impurities, and then an organic film having a thickness of 300 nm is formed by spin coating. A semiconductor layer was formed. Thereafter, polyvinyl butyral was dissolved in a chloroform (boiling point: 61.7 ° C.) solvent by 1% by weight and passed through a filter for removing impurities, and then an intermediate layer of 50 nm was formed on the organic semiconductor layer by a spray method.
Next, 1% by weight of polyvinyl alcohol was dissolved in a butanol (boiling point 117 ° C.) solvent, passed through a filter for removing impurities, and then an insulating layer having a thickness of 500 nm was formed on the intermediate layer by a spray method.
Finally, Au was formed as a gate electrode by a vacuum vapor deposition method to produce an organic transistor element.

  Here, the polyvinyl butyral constituting the intermediate layer was a material dissolved in a solvent (branol) of a coating solution for forming an upper insulating layer. The solvent (chloroform) of the coating solution for forming the intermediate layer was a material that dissolves poly-3-hexylthiophene constituting the lower organic semiconductor layer.

(Example A2)
A gold electrode was formed on a polyethylene terephthalate (PET) substrate having a thickness of 1.0 mm by vacuum deposition to form a gate electrode.
Next, 1% by weight of polyvinyl alcohol was dissolved in a butanol solvent on the gate electrode and passed through a filter for removing impurities, and then an insulating layer of 500 nm was formed by spin coating.
Thereafter, polyvinyl butyral was dissolved in 1% by weight of a butanol solvent and passed through a filter for removing impurities, and then a 50 nm intermediate layer was formed on the insulating layer by a spray method.
Next, 1% by weight of poly 3-hexylthiophene was dissolved in a chloroform solvent, passed through a filter for removing impurities, and then an organic semiconductor layer having a thickness of 300 nm was formed on the intermediate layer by a spray method.
Finally, Au was formed as a source electrode / drain electrode by a vacuum deposition method, and an organic transistor element was produced.

  Here, the polyvinyl butyral constituting the intermediate layer was a material dissolved in a solvent (chloroform) of a coating solution for forming the upper organic semiconductor layer. The solvent (chloroform) of the coating solution for forming the intermediate layer was a material that dissolves polyvinyl alcohol constituting the lower insulating layer.

(Example A3)
An organic transistor element was produced in the same manner as in Example A1, except that the film formation process of each layer was performed in a glove box purged with N ₂ .

(Example A4)
An organic transistor element was produced in the same manner as in Example A2, except that each film forming step was formed in a glove box purged with N ₂ .

(Example A5)
An organic transistor was produced in the same manner as in Example A1, except that cyclohexanone (boiling point: 155.7 ° C.) was used as a solvent for the coating solution for forming the intermediate layer.
Here, the solvent (cyclohexanone) of the coating solution for forming the intermediate layer was a material that dissolves poly-3-hexylthiophene constituting the lower organic semiconductor layer.

(Example A6)
An organic transistor element was produced in the same manner as in Example A1, except that the intermediate layer and the insulating layer were formed by spin coating.

(Example A7)
An organic transistor element was produced in the same manner as in Example A2 except that the intermediate layer and the organic semiconductor layer were formed by spin coating.

(Comparative Example A1)
Gold was deposited on a polyethylene terephthalate (PET) substrate having a thickness of 1.0 mm by vacuum deposition to form source / drain electrodes. Next, 1% by weight of poly-3-hexylthiophene was dissolved in chloroform solvent on the source / drain electrodes, passed through a filter to remove impurities, and then an organic semiconductor layer having a thickness of 300 nm was formed by spin coating.
Thereafter, 1% by weight of polyvinyl alcohol was dissolved in a butanol solvent, passed through a filter for removing impurities, and then an insulating layer of 500 nm was formed on the organic semiconductor layer by spin coating.
Finally, Au was formed as a gate electrode by a vacuum vapor deposition method to produce an organic transistor element.

  Here, the solvent (branol) of the coating liquid for forming the insulating layer was a material that did not dissolve the poly-3-hexylthiophene constituting the lower organic semiconductor layer.

(Comparative Example A2)
A gold electrode was formed on a polyethylene terephthalate (PET) substrate having a thickness of 1.0 mm by vacuum deposition to form a gate electrode.
Next, 1% by weight of polyvinyl alcohol was dissolved in a butanol solvent on the gate electrode and passed through a filter for removing impurities, and then an insulating layer of 500 nm was formed by spin coating.
Thereafter, 1% by weight of poly-3-hexylthiophene was dissolved in a chloroform solvent, passed through a filter for removing impurities, and then an organic semiconductor layer having a thickness of 300 nm was formed on the insulating layer by spin coating.
Finally, Au was formed as a source electrode / drain electrode by a vacuum deposition method, and an organic transistor element was produced.

  Here, the solvent (chloroform) of the coating solution for forming the organic semiconductor layer was a material that did not dissolve the polyvinyl alcohol constituting the lower insulating layer.

(Comparative Example A3)
An organic transistor element was produced in the same manner as in Comparative Example A1, except that the film formation process of each layer was performed in a glove box purged with N ₂ .

(Comparative Example A4)
An organic transistor element was produced in the same manner as in Comparative Example A2 except that the film formation process of each layer was performed in a glove box purged with N ₂ .

(Comparative Example A5)
An organic transistor device was prepared in the same manner as in Example A1, except that a polyester was dissolved in 1% by weight in a toluene solvent and passed through a filter to remove impurities, and then an intermediate layer of 50 nm was formed on the organic semiconductor layer by a spray method. did.

  Here, the polyester constituting the intermediate layer was a material that did not dissolve in the solvent (branol) of the coating solution for forming the upper insulating layer. The solvent (toluene) of the coating solution for forming the intermediate layer was a material that did not dissolve the poly-3-hexylthiophene constituting the lower organic semiconductor layer.

(Comparative Example A6)
An organic transistor device was prepared in the same manner as in Example A1, except that 1 wt% of the polyether was dissolved in cyclohexanone solvent and passed through a filter to remove impurities, and then an intermediate layer of 50 nm was formed on the insulating layer by spraying. did.

  Here, the polyether constituting the intermediate layer was a material that did not dissolve in the solvent (chloroform) of the coating solution for forming the upper organic semiconductor layer. The solvent (cyclohexanone) of the coating liquid for forming the intermediate layer was a material that did not dissolve the polyvinyl alcohol constituting the lower insulating layer.

(Evaluation)
The carrier mobility of the produced organic transistor element and the defect rate evaluation by bending stress were performed on a TFT (Thin Film Transistor) sheet in which the organic transistor element was formed in a 16 × 16 matrix. The results are shown in Table 1.

−Evaluation of carrier mobility−
Using a semiconductor parameter analyzer (manufactured by Agilent Technologies, 4155C), current-voltage characteristics when a gate voltage was applied were measured, and carrier mobility (linear region) was calculated.

−Evaluation of defect rate by bending stress−
The defect rate due to bending stress was determined as follows. The sheet was wound around a cylinder with a radius of 2 cm, and the operation of removing the sheet from the cylinder and extending it flat was performed 20 times in succession to evaluate the peeling of the light emitting element.

  From the results in Table 1, it can be seen that the present example is superior in carrier mobility and the defect rate due to bending stress is reduced as compared with the comparative example.

[Example B]
In this example, an organic electroluminescent element was produced as shown below.

(Example B1)
A substrate on which a ITO electrode (transparent electrode) was patterned in a strip shape having a width of 2 mm was prepared on a glass substrate (transparent insulator substrate), and this was washed with a neutral detergent, acetone, and isopropyl alcohol.
Next, after cleaning the substrate surface with ultraviolet rays / ozone (UV / O ₃ ), 3,4-ethylenedioxythiophene / polystyrene sulfonic acid (PEDOT / PSS) is applied by spin coating at 3000 rpm for 60 seconds to form a film. A hole injection layer having a thickness of 10 nm was formed.
Next, a 0.8 wt% toluene (boiling point: 110.63 ° C.) solution of the compound (I-2) [weight average molecular weight: 6 × 10 ⁴ ] is sprayed onto the substrate on which the hole injection layer is formed. Was applied to form a hole transport layer having a thickness of 50 nm.
Next, an intermediate layer having a film thickness of 15 nm was formed by applying a 0.5 wt% cyclohexanone (boiling point: 156 ° C.) solution of polyester onto the substrate on which the hole transport layer was formed by spraying.
Next, a 50 nm light emitting layer was formed on the intermediate layer by applying a 0.8 wt% toluene solution of the compound (II-15) by a spray method.
Next, the substrate is transferred to a vacuum evaporation apparatus, and LiF is deposited to a thickness of 5 nm. Subsequently, after forming a Ca film with a thickness of 30 nm, Al was vapor-deposited to 150 nm, and these laminates were used as back electrodes.
Finally, glass sealing was performed to obtain an organic electroluminescent element.

  Here, the polyester which the intermediate | middle layer formed between the positive hole transport layer and the light emitting layer comprised was a material melt | dissolved in the solvent (toluene) of the coating liquid which forms the upper light emitting layer. The solvent (cyclohexanone) of the coating liquid for forming the intermediate layer was a material that dissolves the compound (I-2) constituting the lower hole transport layer.

(Example B2)
The light emitting layer was formed in the same manner as in Example B1.
Next, an intermediate layer having a film thickness of 15 nm was formed by applying a solution of polyester (0.5 wt% toluene boiling point 110 ° C.) onto the substrate on which the light emitting layer was formed by a spray method.
Next, an electron transport layer having a film thickness of 50 nm was formed on the intermediate layer by applying a 1 wt% cyclopentanone (boiling point 134 ° C.) solution of the compound (I-6) by a spray method.
Then, the back electrode was formed like Example B1, and the organic electroluminescent element was obtained.

  Here, the polyester which the intermediate | middle layer formed between the light emitting layer and the electron carrying layer comprised was a material melt | dissolved in the solvent (cyclopentanone) of the coating liquid which forms the upper electron carrying layer. The solvent (toluene) of the coating solution for forming the intermediate layer was a material that dissolves the compound (II-15) constituting the lower light emitting layer.

(Example B3)
An organic electroluminescent element was produced in the same manner as in Example B1, except that the film formation process of each layer was performed in a glove box purged with N ₂ .

(Example B4)
An organic electroluminescent element was produced in the same manner as in Example B2, except that the film formation process of each layer was performed in a glove box purged with N ₂ .

(Example B5)
An organic electroluminescent element was produced in the same manner as in Example B1, except that cyclohexanone (boiling point: 155.7 ° C.) was used as a solvent for the coating solution for forming the intermediate layer.
Here, the solvent (cyclohexanone) of the coating solution for forming the intermediate layer was a material that dissolves the compound (I-2) constituting the lower charge transport layer.

(Example B6)
An organic electroluminescent element was produced in the same manner as in Example B1, except that the intermediate layer and the insulating layer were formed by spin coating.

(Example B7)
An organic electroluminescent element was produced in the same manner as in Example B2, except that the two intermediate layers, the light emitting layer, and the electron transport layer were formed by spin coating.

(Comparative Example B1)
An organic electroluminescent element was obtained in the same manner as in Example B1, except that the intermediate layer was not formed and all the layers were formed by spin coating.

(Comparative Example B2)
An organic electroluminescent element was obtained in the same manner as in Example B2, except that the intermediate layer was not formed and all the layers were formed by spin coating.

(Comparative Example B3)
An organic electroluminescent element was produced in the same manner as in Comparative Example B1, except that the film formation process of each layer was performed in a glove box purged with N ₂ .

(Comparative Example B4)
An organic transistor element was produced in the same manner as in Comparative Example B2, except that the film formation process of each layer was performed in a glove box purged with N ₂ .

(Comparative Example B5)
An organic electroluminescence device was obtained in the same manner as in Example B1, except that a 0.5 wt% butanol (boiling point: 100 ° C.) solution of polyvinyl alcohol was formed by spraying a 50 nm intermediate layer on the hole transport layer.

  Here, the polyvinyl alcohol which comprises the intermediate | middle layer formed between a positive hole transport layer and a light emitting layer was a material which does not melt | dissolve in the solvent (toluene) of the coating liquid for forming the upper light emitting layer. The solvent (butanol) of the coating solution for forming the intermediate layer was a material that did not dissolve the compound (I-2) constituting the lower hole transport layer.

(Comparative Example B6)
Similar to Example B2, except that the light emitting layer was formed in the same manner as in Comparative Example B5, and then a 0.5 wt% cyclohexanone boiling point 156 ° C. solution of polyester was formed on the light emitting layer by a spray method. An organic electroluminescent element was prepared.

  Here, the polyester constituting the intermediate layer formed between the light emitting layer and the electron transport layer was a material dissolved in the solvent (cyclopentanone) of the coating solution for forming the upper electron transport layer. . The solvent (cyclohexanone) of the coating solution for forming the intermediate layer was a material that dissolves the compound (II-15) constituting the lower light emitting layer.

(Evaluation)
The electrical characteristics (voltage-luminance characteristics) of the produced organic electroluminescent element and the defect rate evaluation by bending stress were performed on the sheet on which the organic electroluminescent element was formed in a 16 × 16 matrix. The results are shown in Table 2.

-Evaluation of electrical characteristics (voltage-luminance characteristics)-
The electrical characteristics (voltage-luminance characteristics) were obtained as follows. The voltage was applied and evaluated by measuring the rising voltage of the luminance and the maximum luminance.

−Evaluation of defect rate by bending stress−
The defect rate due to bending stress was determined as follows. The sheet was wound around a cylinder with a radius of 2 cm, and the operation of removing the sheet from the cylinder and extending it flat was performed 20 times in succession to evaluate the peeling of the light emitting element.

  From the results in Table 2, it can be seen that this example has superior electrical characteristics (rising voltage, maximum luminance) and a defect rate due to bending stress compared to the comparative example.

It is a schematic block diagram which shows the organic transistor element which concerns on 1st Embodiment. It is a schematic block diagram which shows the organic transistor element which concerns on other 1st Embodiment. It is process drawing which shows the manufacturing method of the organic transistor element concerning 1st Embodiment. It is a schematic block diagram which shows the organic electroluminescent element which concerns on 2nd Embodiment. It is a schematic block diagram which shows the organic electroluminescent element which concerns on other 2nd Embodiment. It is a schematic block diagram which shows the organic electroluminescent element which concerns on other 2nd Embodiment. It is process drawing which shows the manufacturing method of the organic electroluminescent element which concerns on 2nd Embodiment.

Explanation of symbols

10 substrate 12 organic semiconductor layer 12A source electrode 12B drain electrode 14A, 14B intermediate layer 16 insulating layer 18 gate electrode 20 transparent insulator substrate 22 transparent electrode 24 hole injection layer 26 hole transport layer 28A, 28B intermediate layer 30 light emitting layer 32 Electron transport layer 34 Back electrode 40 Voltage application device 100 Organic transistor element 200 Organic electroluminescent element

Claims (15)

A first organic compound layer;
A second organic compound layer formed on the first organic compound layer;
The first organic compound layer and the coating solution containing an organic material that dissolves in a solvent for forming the second organic compound layer and a solvent that dissolves a material that constitutes the first organic compound layer. An intermediate layer formed between the second organic compound layers;
An organic electrical device comprising: The organic electrical device is an organic transistor element having an organic semiconductor layer as the first organic compound layer and an insulating layer as the second organic compound layer,
The organic semiconductor layer and the insulating layer are coated with a coating liquid that includes an organic material that dissolves in a solvent for forming the insulating layer and a solvent that dissolves the material that forms the organic semiconductor layer. The organic electrical device according to claim 1, wherein the organic electrical device is an intermediate layer formed between the two. The organic electrical device is an organic transistor element having an insulating layer as the first organic compound layer and an organic semiconductor layer as the second organic compound layer,
The insulating layer and the organic semiconductor layer are formed of a coating liquid that includes an organic material that dissolves in a solvent for forming the organic semiconductor layer and a solvent that dissolves the material that forms the insulating layer. The organic electrical device according to claim 1, wherein the organic electrical device is an intermediate layer formed between the two.   The organic electrical device according to claim 2, wherein the organic material is an insulating material. The organic electrical device is an organic electroluminescent element having a hole transport layer as the first organic compound layer and a light emitting layer as the second organic compound layer,
The intermediate layer is formed of a coating solution containing an organic material that dissolves in a solvent for forming the light-emitting layer and a solvent that dissolves a material that forms the hole transport layer, and the hole transport layer and the The organic electrical device according to claim 1, wherein the organic electrical device is an intermediate layer formed between the light emitting layer and the light emitting layer. The organic electrical device is an organic electroluminescent element having a light emitting layer as the first organic compound layer and an electron transport layer as the second organic compound layer,
The light emitting layer and the electron transport layer are formed by a coating liquid in which the intermediate layer includes an organic material that dissolves in a solvent for forming the electron transport layer and a solvent that dissolves a material that forms the light emitting layer. The organic electrical device according to claim 1, wherein the organic electrical device is an intermediate layer formed between the two. Forming a first organic compound layer;
Forming a second organic compound layer on the first organic compound layer;
The first organic compound layer and the coating solution containing an organic material that dissolves in a solvent for forming the second organic compound layer and a solvent that dissolves a material that constitutes the first organic compound layer. Forming an intermediate layer between the second organic compound layers;
A method for producing an organic electrical device, comprising: The method for producing an organic electrical device is a method for producing an organic transistor element, comprising: a step of forming an organic semiconductor layer as the first organic compound layer; and a step of forming an insulating layer as the second organic compound layer.
In the step of forming the intermediate layer, the organic semiconductor layer is formed of a coating solution containing an organic material that dissolves in a solvent for forming the insulating layer and a solvent that dissolves the material constituting the organic semiconductor layer. The method of manufacturing an organic electrical device according to claim 7, wherein an intermediate layer is formed between the insulating layer and the insulating layer. The method for producing an organic electrical device is a method for producing an organic transistor element, comprising a step of forming an insulating layer as the first organic compound layer, and a step of forming an organic semiconductor layer as the second organic compound layer.
The step of forming the intermediate layer includes a coating liquid containing an organic material that dissolves in a solvent for forming the organic semiconductor layer and a solvent that dissolves a material constituting the insulating layer, and the insulating layer and The method of manufacturing an organic electrical device according to claim 7, wherein the method is a step of forming an intermediate layer between the organic semiconductor layer and the organic semiconductor layer.   The method of manufacturing an organic electrical device according to claim 8, wherein the organic material is an insulating material. The method for manufacturing an organic electroluminescent device includes: a step of forming a hole transport layer as the first organic compound layer; and a step of forming a light emitting layer as the second organic compound layer. And
The hole transport layer includes a coating liquid containing an organic material that dissolves in a solvent for forming the light-emitting layer and a solvent that dissolves a material constituting the hole transport layer. The method for producing an organic electrical device according to claim 7, wherein an intermediate layer is formed between the light emitting layer and the light emitting layer. The method for producing an organic electrical device is a method for producing an organic electroluminescent device, comprising: forming a light emitting layer as the first organic compound layer; and forming an electron transport layer as the second organic compound layer. Yes,
The step of forming the intermediate layer comprises a coating liquid containing an organic material that dissolves in a solvent for forming the electron transport layer and a solvent that dissolves a material constituting the light emitting layer, and the light emitting layer The method of manufacturing an organic electrical device according to claim 7, wherein the method is a step of forming an intermediate layer between the electron transport layer and the electron transport layer.   13. The method of manufacturing an organic electrical device according to claim 7, wherein the step of forming the intermediate layer is a step of spraying the coating liquid to form the intermediate layer.   The method for producing an organic electrical device according to claim 13, wherein the solvent of the coating solution is a solvent having a boiling point of 100 ° C or higher.   The method of manufacturing an organic electrical device according to claim 7, wherein the step of forming each layer is performed in a nitrogen atmosphere.

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