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JP2010045248A - Light-emitting diode - Google Patents

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JP2010045248A
JP2010045248A JP2008209054A JP2008209054A JP2010045248A JP 2010045248 A JP2010045248 A JP 2010045248A JP 2008209054 A JP2008209054 A JP 2008209054A JP 2008209054 A JP2008209054 A JP 2008209054A JP 2010045248 A JP2010045248 A JP 2010045248A
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light
resin
led chip
led
circuit board
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Teppei Takano
鉄平 高野
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Citizen Electronics Co Ltd
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Citizen Electronics Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To emit visible light only from a side surface of an LED. <P>SOLUTION: A metal pad (not shown) is provided on an upper surface of a circuit board 2 of an insulating BT resin etc., constituting an LED 1 with a wide viewing angle, and an LED chip 3 for emitting ultraviolet light is die-bonded on the pad. Further, a pair of wiring circuits (not shown) are provided on a surface of the circuit board 2, and wire-bonding connections from an electrode of the LED chip 3 to the wiring circuits are made by gold wires 4. On the circuit board 2, a frame 5 in a square cylinder shape or circular cylinder shape is fixed enclosing a second bonding area. The frame 5 having an equal thickness L is formed of an epoxy resin or silicone resin containing a tricolor phosphor excited in the ultraviolet range. The frame 5 is filled with a sealing resin 6 made of a translucent resin such as an epoxy resin and a silicone resin. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、携帯電話のキー照明のような分野で使用される広視野角の発光ダイオードに関する。   The present invention relates to a light emitting diode having a wide viewing angle used in a field such as key illumination of a cellular phone.

従来の一般的な発光ダイオード(以下LEDと略称)の一例について説明する。図5は従来のLEDの一例を示す平面図、図6は図5のX−X断面を示す断面図である。図5、図6において、LED51は回路基板2上にLEDチップ53をダイボンドして金線4で配線し、蛍光体を含む封止樹脂56で封止した面実装タイプのものである。LEDチップと外壁との距離A、B及びCは一般的には互いに異なっている。   An example of a conventional general light emitting diode (hereinafter abbreviated as LED) will be described. FIG. 5 is a plan view showing an example of a conventional LED, and FIG. 6 is a cross-sectional view showing the XX cross section of FIG. 5 and 6, the LED 51 is of a surface mount type in which an LED chip 53 is die-bonded on the circuit board 2 and wired with a gold wire 4 and sealed with a sealing resin 56 containing a phosphor. The distances A, B and C between the LED chip and the outer wall are generally different from each other.

なお、LEDは本来指向性が強く視野角が狭いので、正面からの視認性は良好だが横からの視認性が悪くなるという欠点がある。そこで、携帯電話のキー照明のような分野に適用するには広視野角のLEDが求められる。このような分野で求められるLEDとして、LEDチップを回路基板上に実装し封止樹脂の上面に反射物質層を形成することによって、正面発光の強度を制御して側面方向へ取り出すようにしたものがある(例えば、特許文献1参照。)。
特開2004−304041号(図1−5、3−4頁)
In addition, since LED has high directivity and a narrow viewing angle, it has a drawback that visibility from the front is good but visibility from the side is poor. Therefore, an LED having a wide viewing angle is required for application to a field such as key illumination of a mobile phone. As an LED required in such a field, an LED chip is mounted on a circuit board and a reflective material layer is formed on the upper surface of the sealing resin so that the intensity of front emission is controlled and taken out in the lateral direction. (For example, refer to Patent Document 1).
JP 2004-304041 (FIGS. 1-5, pages 3-4)

しかしながら、従来の一般的なLEDの上面に反射面を形成した場合には、蛍光体層(波長変換層)を透過する光の経路長が出射方向により異なるために、変換光の色度や明るさが出射方向により異なってしまうという問題がある。例えば、LEDチップ53が青色光を出射するものであり、封止樹脂56がYAG蛍光体を含むものであって、上方(C方向)に白色光を出射するように調整した場合には、経路長がC方向と比較して短いA方向では出射される光は青くなり、経路長がC方向と比較して長いB方向に出射される光は黄色くなってしまっていた。また、LEDチップ53が紫外光を出射するものであり、封止樹脂56が3色蛍光体を含むものである場合には、LED51から上方(C方向)に白色光を出射するように調整した場合には、側面方向に出射する白色光がA方向では問題ないが、経路長がC方向と比較して長いB方向では暗くなってしまっていた。   However, when a reflective surface is formed on the upper surface of a conventional general LED, the path length of the light transmitted through the phosphor layer (wavelength conversion layer) differs depending on the emission direction. There is a problem that the length varies depending on the emission direction. For example, when the LED chip 53 emits blue light and the sealing resin 56 includes a YAG phosphor and is adjusted to emit white light upward (C direction), the path The light emitted in the A direction whose length is shorter than the C direction is blue, and the light emitted in the B direction whose path length is longer than the C direction is yellow. Further, when the LED chip 53 emits ultraviolet light and the sealing resin 56 includes a three-color phosphor, the LED chip 53 is adjusted to emit white light upward (C direction). The white light emitted in the lateral direction is not a problem in the A direction, but the path length is darker in the B direction, which is longer than the C direction.

上記発明は、このような従来の問題を解決するためになされたものであり、その目的は、側面から均質な可視光が効率よく取り出せる広視野角のLEDを提供することである。   The present invention has been made to solve such a conventional problem, and an object thereof is to provide an LED having a wide viewing angle from which uniform visible light can be efficiently extracted from the side surface.

前述した目的を達成するための本発明の手段は、回路基板にLEDチップを実装し、このLEDチップを縦横の長さの異なる外形を有する透光性樹脂で封止した発光ダイオードにおいて、前記LEDチップは紫外光を出射するものであり、前記回路基板上には前記透光性樹脂を囲むように紫外領域で励起する蛍光体を含む樹脂で形成した肉厚の等しい枠体を配設したことを特徴とする。   The means of the present invention for achieving the above-described object is a light emitting diode in which an LED chip is mounted on a circuit board and the LED chip is sealed with a light-transmitting resin having different vertical and horizontal lengths. The chip emits ultraviolet light, and a frame body of equal thickness formed of a resin containing a phosphor excited in the ultraviolet region is disposed on the circuit board so as to surround the translucent resin. It is characterized by.

また、前記蛍光体は3色蛍光体であることを特徴とする。   The phosphor is a three-color phosphor.

また、前記透光性樹脂の上面を反射シートで覆ったことを特徴とする。   Further, the upper surface of the translucent resin is covered with a reflection sheet.

前述した目的を達成するための本発明の他の手段は、回路基板にLEDチップを実装し、このLEDチップを縦横の長さの異なる外形を有する透光性樹脂で封止した発光ダイオードにおいて、前記LEDチップは青色光を出射するものであり、前記回路基板上には前記透光性樹脂を囲むようにYAG蛍光体を含む樹脂で形成した肉厚の等しい枠体を配設し、更に前記透光性樹脂の上面を反射シートで覆ったことを特徴とする。   Another means of the present invention for achieving the above-described object is to provide a light-emitting diode in which an LED chip is mounted on a circuit board, and the LED chip is sealed with a translucent resin having different vertical and horizontal lengths. The LED chip emits blue light, and on the circuit board is disposed a frame body of equal thickness formed of a resin containing a YAG phosphor so as to surround the translucent resin. The upper surface of the translucent resin is covered with a reflection sheet.

本発明によれば、回路基板にLEDチップを実装し、このLEDチップを縦横の長さの異なる外形を有する透光性樹脂で封止した発光ダイオードにおいて、前記LEDチップは紫外光を出射するLEDチップであり、前記回路基板上には前記透光性樹脂を囲むように紫外領域で励起する蛍光体を含む樹脂で形成した肉厚の等しい枠体を配設したので、上面からでる光は可視領域外の光であるから、人間の目には見えない。一方側面から出る光は、蛍光体枠により励起されて可視光となり人間の目に見える光となる。したがって、携帯電話のキー照明のような場面でこのLEDを使用した場合に視野角が広くなり表示の視認性が良好になる。   According to the present invention, an LED chip is mounted on a circuit board, and the LED chip is sealed with a light-transmitting resin having different outer and vertical lengths. The LED chip emits ultraviolet light. The chip is a chip, and a frame body of equal thickness formed of a resin containing a phosphor excited in the ultraviolet region is disposed on the circuit board so as to surround the translucent resin. Because it is out of the area, it is invisible to the human eye. On the other hand, the light emitted from the side surface is excited by the phosphor frame and becomes visible light, which becomes visible to human eyes. Therefore, when this LED is used in a scene such as key illumination of a cellular phone, the viewing angle is widened and the display visibility is improved.

また、前記蛍光体は3色蛍光体であるようにしたので、蛍光体の配合比率を変えることで白色に限らず演色性の高い他の色をも出せるようになり、視野角の広いLEDが得られる。   In addition, since the phosphor is a three-color phosphor, by changing the blending ratio of the phosphor, it is possible to produce not only white but also other colors with high color rendering properties. can get.

また、前記透光性樹脂の上面を反射シートで覆ったので、上面方向へ向かった光は反射して側面方向へ導かれ、より一層効率よく側面から発光して視野角の広いLEDが得られる。   In addition, since the upper surface of the translucent resin is covered with the reflection sheet, the light directed toward the upper surface is reflected and guided toward the side surface, and more efficiently emits light from the side surface to obtain an LED having a wide viewing angle. .

また、回路基板にLEDチップを実装し、このLEDチップを縦横の長さの異なる外形を有する透光性樹脂で封止した発光ダイオードにおいて、前記LEDチップは紫外光を出射するものであり、前記回路基板上には前記透光性樹脂を囲むように紫外領域で励起する蛍光体を含む樹脂で形成した肉厚の等しい枠体を配設したので、上面から出る光はなくなり、側面からは白色光を取り出すことができる。したがって、視野角の広いLEDが得られる。   Further, in a light emitting diode in which an LED chip is mounted on a circuit board and the LED chip is sealed with a light-transmitting resin having different external shapes in length and width, the LED chip emits ultraviolet light, On the circuit board, a frame with an equal thickness formed of a resin containing a phosphor excited in the ultraviolet region is disposed so as to surround the translucent resin, so that no light is emitted from the upper surface, and white is seen from the side. Light can be extracted. Therefore, an LED having a wide viewing angle can be obtained.

以下、本発明の最良の実施形態である広視野角LEDについて図面を参照して詳細に説明する。図1は、本発明の第一の実施形態である広視野角LEDを示す平面図である。図2は図1のX−X断面を示す断面図である。   Hereinafter, a wide viewing angle LED which is the best embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 is a plan view showing a wide viewing angle LED according to a first embodiment of the present invention. FIG. 2 is a cross-sectional view showing the XX cross section of FIG.

まず、本発明の第一の実施の形態である広視野角LEDの構成について説明する。図1、図2において、広視野角のLED1を構成する絶縁性を有するBTレジン等の回路基板2の上面には図示しない金属パッドが設けられており、このパッド上に紫外光を出射するLEDチップ3がダイボンディングされている。また、回路基板2の表面には図示しない一対の配線回路があり、LEDチップ3の電極からこの配線回路まで金線4によってワイヤボンディング接続されている。回路基板2上にはセカンドボンディング領域を囲むように長方形の外形を有する枠体5が固定されている。等しい肉厚Lを有する枠体5は紫外領域で励起する蛍光体を含むエポキシ樹脂やシリコーン樹脂で形成されている。枠体5の内部には縦横の長さが異なる外形を有するエポキシ樹脂やシリコーン樹脂等の透光性樹脂からなる封止樹脂6が充填されている。   First, the configuration of the wide viewing angle LED according to the first embodiment of the present invention will be described. 1 and 2, a metal pad (not shown) is provided on the upper surface of a circuit board 2 such as an insulating BT resin that constitutes the LED 1 having a wide viewing angle, and an LED that emits ultraviolet light on the pad. Chip 3 is die-bonded. There is a pair of wiring circuits (not shown) on the surface of the circuit board 2, and the wires from the electrodes of the LED chip 3 to the wiring circuits are connected by wire bonding with gold wires 4. A frame 5 having a rectangular outer shape is fixed on the circuit board 2 so as to surround the second bonding region. The frame 5 having an equal thickness L is formed of an epoxy resin or a silicone resin containing a phosphor that is excited in the ultraviolet region. The inside of the frame 5 is filled with a sealing resin 6 made of a translucent resin such as an epoxy resin or a silicone resin having external shapes with different vertical and horizontal lengths.

ここで紫外領域で励起する蛍光体には、例えば3色蛍光体があり、紫外光の励起により赤色、青色、緑色の3色を発光する蛍光体である。3色が混色となって白色を発光することとなる。紫外領域で励起する蛍光体には3色蛍光体以外にも、演色性を高めるために、3色に加えて橙色や黄緑色が入った多色蛍光体でもよい。また、青色と黄色又は赤色と緑色を発光する蛍光体によっても疑似白色を発光させることができる。   Here, the phosphor excited in the ultraviolet region includes, for example, a three-color phosphor, and is a phosphor that emits three colors of red, blue, and green by excitation of ultraviolet light. The three colors are mixed to emit white light. In addition to the three-color phosphor, the phosphor excited in the ultraviolet region may be a multicolor phosphor containing orange or yellow-green in addition to the three colors in order to improve color rendering. Further, pseudo white light can be emitted by phosphors emitting blue and yellow or red and green.

次に、第一の実施の形態の作用について説明する。配線回路に信号電流が印加されると金線4を経由してLEDチップ3に入り、LEDチップ3は紫外光を出射する。LED1の正面(図2の上方)に向って出射された光は紫外光であるから人の目には見えない。一方、LEDチップ3からLED1の側面に向かって出射された紫外光は、枠体5を透過する際に蛍光体を励起することによって周波数が変換されて白色光に換わり、枠体5の外側に出射される。   Next, the operation of the first embodiment will be described. When a signal current is applied to the wiring circuit, it enters the LED chip 3 via the gold wire 4, and the LED chip 3 emits ultraviolet light. The light emitted toward the front of the LED 1 (upper side in FIG. 2) is ultraviolet light and is not visible to human eyes. On the other hand, the ultraviolet light emitted from the LED chip 3 toward the side surface of the LED 1 is converted into white light by exciting the phosphor when passing through the frame body 5 to be converted into white light. Emitted.

次に、本発明の第一の実施の形態の効果について説明する。LEDチップ3から出射された光はLED1の正面方向では紫外光であるから見えず、LED1の側面方向に向かった光は枠体5を透過して人間の目に見える光となる。このとき、封止樹脂6が透光性であるから蛍光体を含む樹脂より透過率がよく、より明るい光となる。そして、枠体5の短辺からでる光も長辺から出る光も共に肉厚Lが等しいから色度が同じ均質の可視光となる。したがって、LED1を携帯電話のキー照明などに適用した場合に、視認性が良好となる。   Next, the effect of the first embodiment of the present invention will be described. The light emitted from the LED chip 3 is not visible because it is ultraviolet light in the front direction of the LED 1, and the light directed toward the side surface of the LED 1 passes through the frame 5 and becomes visible to the human eye. At this time, since the sealing resin 6 is translucent, the transmittance is better than that of the resin containing the phosphor and the light is brighter. Since both the light emitted from the short side of the frame 5 and the light emitted from the long side have the same thickness L, they become uniform visible light having the same chromaticity. Therefore, when the LED 1 is applied to key illumination of a mobile phone, the visibility is improved.

次に、本発明の第二の実施の形態であるLEDの構成について説明する。図3は本発明の第二の実施の形態であるLEDの平面図であり、図4は図3のX−X断面を示す断面図である。図3において、アルミシートや下面に銀を蒸着したシート等からなる反射シート7が透光性樹脂6の上面を覆っている。その他の構成は第一の実施の形態であるLED1と同様なので、同じ構成要素には同じ符号と名称とを付して詳細な説明を省略する。   Next, the configuration of the LED according to the second embodiment of the present invention will be described. FIG. 3 is a plan view of an LED according to a second embodiment of the present invention, and FIG. 4 is a cross-sectional view showing the XX cross section of FIG. In FIG. 3, a reflection sheet 7 made of an aluminum sheet or a sheet having silver deposited on the lower surface covers the upper surface of the translucent resin 6. Since other configurations are the same as those of the LED 1 according to the first embodiment, the same components are denoted by the same reference numerals and names, and detailed description thereof is omitted.

次に、第二の実施の形態の作用・効果について説明する。LEDチップ3からLED11の正面方向に出射された紫外光は反射シート7下面の反射率が高いので上面には向かわず、シート下面において反射してLED11の側面方向に向かう。初めから側面方向に向かった紫外光は反射して側面方向に向かった紫外光と重なって光量が増し、枠体5を通るときに蛍光体を励起して可視光に変換されて出射される。したがって、LED1に比べてより有効にLED11の側面から可視光を出射させることができる。したがって、LED1より一層際立つ効果が期待できる。   Next, operations and effects of the second embodiment will be described. The ultraviolet light emitted from the LED chip 3 in the front direction of the LED 11 has a high reflectance on the lower surface of the reflecting sheet 7 and therefore does not travel toward the upper surface, but reflects on the lower surface of the sheet and travels toward the side surface of the LED 11. The ultraviolet light directed toward the side surface from the beginning is reflected and overlapped with the ultraviolet light directed toward the side surface to increase the amount of light, and when passing through the frame 5, the phosphor is excited to be converted into visible light and emitted. Therefore, visible light can be emitted from the side surface of the LED 11 more effectively than the LED 1. Therefore, the effect which stands out more than LED1 can be expected.

以上説明した第一の実施の形態においては、LEDチップの実装はワイヤボンディングに限定されるものではなく、バンプによる接続であってもよい。   In the first embodiment described above, mounting of the LED chip is not limited to wire bonding, but may be connection by bumps.

以上説明した第二の実施の形態においては、LEDチップ3は青色光を出射するものに替え、枠体5はYAG蛍光体を含む樹脂に替えたものにすることもできる。この場合にも、第二の実施の形態と同様な効果が期待できる。   In the second embodiment described above, the LED chip 3 can be replaced with one that emits blue light, and the frame 5 can be replaced with a resin containing a YAG phosphor. In this case, the same effect as that of the second embodiment can be expected.

本発明の第一の実施の形態である発光ダイオードを示す平面図である。It is a top view which shows the light emitting diode which is 1st embodiment of this invention. 図1のX−X断面を示す縦断面図である。It is a longitudinal cross-sectional view which shows the XX cross section of FIG. 本発明の第二の実施の形態である発光ダイオードを示す平面図である。It is a top view which shows the light emitting diode which is 2nd embodiment of this invention. 図3のX−X断面を示す縦断面図である。It is a longitudinal cross-sectional view which shows the XX cross section of FIG. 従来の発光ダイオードを示す平面図である。It is a top view which shows the conventional light emitting diode. 図1のX−X断面を示す縦断面図である。It is a longitudinal cross-sectional view which shows the XX cross section of FIG.

符号の説明Explanation of symbols

1、11 LED
2 回路基板
3 LEDチップ
5 枠体
6 封止樹脂
7 反射シート
1,11 LED
2 Circuit board 3 LED chip 5 Frame 6 Sealing resin 7 Reflective sheet

Claims (4)

回路基板にLEDチップを実装し、このLEDチップを縦横の長さの異なる外形を有する透光性樹脂で封止した発光ダイオードにおいて、前記LEDチップは紫外光を出射するものであり、前記回路基板上には前記透光性樹脂を囲むように紫外領域で励起する蛍光体を含む樹脂で形成した肉厚の等しい枠体を配設したことを特徴とする発光ダイオード。   In a light-emitting diode in which an LED chip is mounted on a circuit board and the LED chip is sealed with a light-transmitting resin having different external shapes in length and width, the LED chip emits ultraviolet light, and the circuit board A light emitting diode characterized in that a frame body of equal thickness formed of a resin containing a phosphor excited in the ultraviolet region is disposed so as to surround the translucent resin. 前記蛍光体は3色蛍光体であることを特徴とする請求項1記載の発光ダイオード。   2. The light emitting diode according to claim 1, wherein the phosphor is a three-color phosphor. 前記透光性樹脂の上面を反射シートで覆ったことを特徴とする請求項1又は請求項2に記載の発光ダイオード。   The light emitting diode according to claim 1 or 2, wherein an upper surface of the translucent resin is covered with a reflection sheet. 回路基板にLEDチップを実装し、このLEDチップを縦横の長さの異なる外形を有する透光性樹脂で封止した発光ダイオードにおいて、前記LEDチップは青色光を出射するものであり、前記回路基板上には前記透光性樹脂を囲むようにYAG蛍光体を含む樹脂で形成した肉厚の等しい枠体を配設し、更に前記透光性樹脂の上面を反射シートで覆ったことを特徴とする発光ダイオード。   In a light emitting diode in which an LED chip is mounted on a circuit board and the LED chip is sealed with a light-transmitting resin having different external shapes in length and width, the LED chip emits blue light, and the circuit board A frame having an equal thickness formed of a resin containing a YAG phosphor is disposed on the top to surround the translucent resin, and the upper surface of the translucent resin is covered with a reflective sheet. Light emitting diode.
JP2008209054A 2008-08-14 2008-08-14 Light-emitting diode Pending JP2010045248A (en)

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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013042095A (en) * 2011-08-19 2013-02-28 Citizen Electronics Co Ltd Semiconductor light emitting device
JP2013089645A (en) * 2011-10-13 2013-05-13 Citizen Electronics Co Ltd Semiconductor light-emitting device and manufacturing method of the same
JP2013143430A (en) * 2012-01-10 2013-07-22 Citizen Holdings Co Ltd Semiconductor light-emitting device, and illuminating device using the same
JP2013197335A (en) * 2012-03-21 2013-09-30 Kyocera Corp Light emitting device
JP2013197369A (en) * 2012-03-21 2013-09-30 Rohm Co Ltd Light source device and led lamp
JP2013251393A (en) * 2012-05-31 2013-12-12 Citizen Electronics Co Ltd Side face irradiation type led light-emitting device and side irradiation type led light-emitting device manufacturing method
US8659043B1 (en) 2013-02-19 2014-02-25 Cooledge Lighting Inc. Engineered-phosphor LED packages and related methods
US8933478B2 (en) 2013-02-19 2015-01-13 Cooledge Lighting Inc. Engineered-phosphor LED packages and related methods
JP2016527723A (en) * 2013-07-22 2016-09-08 コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. Flip chip side-emitting LED
US10043954B2 (en) 2013-11-08 2018-08-07 Citizen Electronics Co., Ltd. Lighting device with a phosphor layer on a peripheral side surface of a light-emitting element and a reflecting layer on an upper surface of the light-emitting element and on an upper surface of the phosphor layer
JP2019062173A (en) * 2017-09-26 2019-04-18 パナソニックIpマネジメント株式会社 Luminaire apparatus and light-emitting device
CN110718621A (en) * 2018-07-12 2020-01-21 首尔半导体株式会社 light-emitting element
JP2020053405A (en) * 2019-12-11 2020-04-02 日亜化学工業株式会社 Light emitting device and surface light emitting device using light emitting device
JP2022087001A (en) * 2020-11-30 2022-06-09 日亜化学工業株式会社 Light-emitting device and planar light source

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001257381A (en) * 2000-03-13 2001-09-21 Sharp Corp Light emitting diode, method of manufacturing the same, and lighting device
JP2004304041A (en) * 2003-03-31 2004-10-28 Citizen Electronics Co Ltd Light emitting diode
JP2006339650A (en) * 2005-06-01 2006-12-14 Samsung Electro-Mechanics Co Ltd Side-emitting LED package and manufacturing method thereof
JP2007180347A (en) * 2005-12-28 2007-07-12 Shinko Electric Ind Co Ltd Light emitting device and manufacturing method thereof
JP2007201301A (en) * 2006-01-30 2007-08-09 Sumitomo Metal Electronics Devices Inc White LED light emitting device
JP2008060542A (en) * 2006-08-03 2008-03-13 Toyoda Gosei Co Ltd LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE MANUFACTURING METHOD, AND LIGHT SOURCE DEVICE HAVING THE SAME
JP2009267289A (en) * 2008-04-30 2009-11-12 Citizen Electronics Co Ltd Light-emitting device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001257381A (en) * 2000-03-13 2001-09-21 Sharp Corp Light emitting diode, method of manufacturing the same, and lighting device
JP2004304041A (en) * 2003-03-31 2004-10-28 Citizen Electronics Co Ltd Light emitting diode
JP2006339650A (en) * 2005-06-01 2006-12-14 Samsung Electro-Mechanics Co Ltd Side-emitting LED package and manufacturing method thereof
JP2007180347A (en) * 2005-12-28 2007-07-12 Shinko Electric Ind Co Ltd Light emitting device and manufacturing method thereof
JP2007201301A (en) * 2006-01-30 2007-08-09 Sumitomo Metal Electronics Devices Inc White LED light emitting device
JP2008060542A (en) * 2006-08-03 2008-03-13 Toyoda Gosei Co Ltd LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE MANUFACTURING METHOD, AND LIGHT SOURCE DEVICE HAVING THE SAME
JP2009267289A (en) * 2008-04-30 2009-11-12 Citizen Electronics Co Ltd Light-emitting device

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013042095A (en) * 2011-08-19 2013-02-28 Citizen Electronics Co Ltd Semiconductor light emitting device
JP2013089645A (en) * 2011-10-13 2013-05-13 Citizen Electronics Co Ltd Semiconductor light-emitting device and manufacturing method of the same
JP2013143430A (en) * 2012-01-10 2013-07-22 Citizen Holdings Co Ltd Semiconductor light-emitting device, and illuminating device using the same
JP2013197335A (en) * 2012-03-21 2013-09-30 Kyocera Corp Light emitting device
JP2013197369A (en) * 2012-03-21 2013-09-30 Rohm Co Ltd Light source device and led lamp
JP2013251393A (en) * 2012-05-31 2013-12-12 Citizen Electronics Co Ltd Side face irradiation type led light-emitting device and side irradiation type led light-emitting device manufacturing method
US9484509B2 (en) 2012-05-31 2016-11-01 Citizen Electronics Co., Ltd. Lighting device and method of manufacturing the same
US9196801B2 (en) 2012-05-31 2015-11-24 Citizen Electronics Co., Ltd. Lighting device and method of manufacturing the same
US9142738B2 (en) 2013-02-19 2015-09-22 Cooledge Lighting Inc. Engineered-phosphor LED packages and related methods
US8853729B2 (en) 2013-02-19 2014-10-07 Cooledge Lighting Inc. Engineered-phosphor LED packages and related methods
US8933479B2 (en) 2013-02-19 2015-01-13 Cooledge Lighting Inc. Engineered-phosphor LED packages and related methods
US8933478B2 (en) 2013-02-19 2015-01-13 Cooledge Lighting Inc. Engineered-phosphor LED packages and related methods
US8754435B1 (en) 2013-02-19 2014-06-17 Cooledge Lighting Inc. Engineered-phosphor LED package and related methods
US8722439B1 (en) 2013-02-19 2014-05-13 Cooledge Lighting Inc. Engineered-phosphor LED packages and related methods
US9425368B2 (en) 2013-02-19 2016-08-23 Cooledge Lighting, Inc. Engineered-phosphor LED packages and related methods
US8659043B1 (en) 2013-02-19 2014-02-25 Cooledge Lighting Inc. Engineered-phosphor LED packages and related methods
JP2016527723A (en) * 2013-07-22 2016-09-08 コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. Flip chip side-emitting LED
US10043954B2 (en) 2013-11-08 2018-08-07 Citizen Electronics Co., Ltd. Lighting device with a phosphor layer on a peripheral side surface of a light-emitting element and a reflecting layer on an upper surface of the light-emitting element and on an upper surface of the phosphor layer
JP2019062173A (en) * 2017-09-26 2019-04-18 パナソニックIpマネジメント株式会社 Luminaire apparatus and light-emitting device
CN110718621A (en) * 2018-07-12 2020-01-21 首尔半导体株式会社 light-emitting element
US11876151B2 (en) 2018-07-12 2024-01-16 Seoul Semiconductor Co., Ltd. Light emitting device, light emitting diode package, backlight unit, and liquid crystal display
US12288834B2 (en) 2018-07-12 2025-04-29 Seoul Semiconductor Co., Ltd. Light emitting device, light emitting diode package, backlight unit, and liquid crystal display
US12317651B2 (en) 2018-07-12 2025-05-27 Seoul Semiconductor Co., Ltd. Light emitting device, light emitting diode package, backlight unit, and liquid crystal display
JP2020053405A (en) * 2019-12-11 2020-04-02 日亜化学工業株式会社 Light emitting device and surface light emitting device using light emitting device
JP6993589B2 (en) 2019-12-11 2022-02-04 日亜化学工業株式会社 Light emitting device and surface light emitting device using light emitting device
JP2022087001A (en) * 2020-11-30 2022-06-09 日亜化学工業株式会社 Light-emitting device and planar light source
JP7285439B2 (en) 2020-11-30 2023-06-02 日亜化学工業株式会社 planar light source

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