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JP2009239475A - Surface mounting piezoelectric oscillator - Google Patents

Surface mounting piezoelectric oscillator Download PDF

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JP2009239475A
JP2009239475A JP2008080933A JP2008080933A JP2009239475A JP 2009239475 A JP2009239475 A JP 2009239475A JP 2008080933 A JP2008080933 A JP 2008080933A JP 2008080933 A JP2008080933 A JP 2008080933A JP 2009239475 A JP2009239475 A JP 2009239475A
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circuit board
integrated circuit
wiring pattern
base
circuit element
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Masatsugu Hirano
雅嗣 平野
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Daishinku Corp
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Abstract

【課題】 搭載領域の無駄をなくしながら小型化・低背化に対応した表面実装型圧電発振器とその製造方法を提供する。
【解決手段】 圧電振動板3と集積回路素子2を収納する絶縁性のベース1を有する表面実装型圧電発振器であって、前記ベースは側壁部と第1の収納部10a、当該第1の収納部の側壁部と接続された段差部10cと、前記第1の収納部と前記段差部の上面に配置される第2の収納部10bとが形成されており、表裏面に配線パターンが形成された板状の回路基板4の上面側と前記圧電振動板と、当該回路基板の底面側と前記集積回路素子とがそれぞれ導電性接合材で接合されるとともに、前記段差部上面の配線パターンと前記回路基板の底面側の配線パターンの一部とが導電性接合材で接合される。
【選択図】 図1
PROBLEM TO BE SOLVED: To provide a surface mount type piezoelectric oscillator corresponding to a reduction in size and height while eliminating waste of a mounting area and a manufacturing method thereof.
A surface-mount piezoelectric oscillator having an insulating base 1 for housing a piezoelectric diaphragm 3 and an integrated circuit element 2, wherein the base is a side wall portion, a first housing portion 10a, and the first housing. A step part 10c connected to the side wall part of the part, a second storage part 10b disposed on the top surface of the first storage part and the step part, and a wiring pattern is formed on the front and back surfaces. The upper surface side of the plate-like circuit board 4 and the piezoelectric diaphragm, the bottom surface side of the circuit board and the integrated circuit element are respectively bonded by a conductive bonding material, and the wiring pattern on the upper surface of the stepped portion and the A part of the wiring pattern on the bottom surface side of the circuit board is bonded with a conductive bonding material.
[Selection] Figure 1

Description

本発明は、絶縁性のベース上に圧電振動板と集積回路素子が実装された表面実装型圧電発振器に関するものであって、特に表面実装型圧電発振器のパッケージ構造を改善するものである。   The present invention relates to a surface-mount piezoelectric oscillator in which a piezoelectric diaphragm and an integrated circuit element are mounted on an insulating base, and particularly to improve the package structure of a surface-mount piezoelectric oscillator.

水晶等の圧電振動板を用いた圧電発振器は、安定して精度の高い発振周波数を得ることができるため、電子機器等の基準周波数源として多種の分野で使用されている。表面実装型圧電発振器では、絶縁性のベースとしてセラミック多層基板を用い、当該ベースの収納部に発振回路用の集積回路素子を配置するとともに、当該集積回路素子の上方に水晶振動板を支持固定し、気密封止を行ったものである。このような構成は集積回路素子のカスタム化により比較的部品点数が少なく、シンプルな構成であり、低コスト化に寄与している。   A piezoelectric oscillator using a piezoelectric diaphragm such as a crystal can stably obtain a highly accurate oscillation frequency, and is therefore used in various fields as a reference frequency source for electronic devices and the like. In a surface-mounted piezoelectric oscillator, a ceramic multilayer substrate is used as an insulating base, an integrated circuit element for an oscillation circuit is disposed in a housing portion of the base, and a crystal diaphragm is supported and fixed above the integrated circuit element. , Hermetically sealed. Such a configuration has a relatively small number of parts due to customization of the integrated circuit element, is a simple configuration, and contributes to cost reduction.

このような集積回路素子は、ベースに形成された配線パターンに対して、ワイヤボンディング工法を用いて接続するか、あるいは金属バンプ(Au等)を介したフェイスダウンボンディングの工法(以下「FCB」という)を用いて接続することで、圧電振動子や端子電極等と電気的に接続されている(例えば、下記する特許文献1参照)。
特開2004−356687号公報
Such an integrated circuit element is connected to a wiring pattern formed on a base using a wire bonding method, or a face-down bonding method (hereinafter referred to as “FCB”) through a metal bump (Au or the like). ) Is electrically connected to a piezoelectric vibrator, a terminal electrode, or the like (see, for example, Patent Document 1 below).
JP 2004-356687 A

現在、電子機器の小型化が進んでおり、この小型化にともない上記したような表面実装型圧電発振器も小型化が進められている。そのため、例えば、上記した特許文献1に示すような表面実装型圧電発振器では、圧電振動板や集積回路素子を搭載するための平面領域を狭めて形成したり、収納部の高さをできるだけ低く形成することが求められている。   Currently, electronic devices are being miniaturized, and along with this miniaturization, the surface-mount piezoelectric oscillator as described above is also being miniaturized. Therefore, for example, in the surface mount type piezoelectric oscillator as shown in Patent Document 1 described above, a planar area for mounting a piezoelectric diaphragm or an integrated circuit element is narrowed, or the height of the storage portion is made as low as possible. It is requested to do.

また、集積回路素子を収納する収納部の大きさに応じて、上部に配置される圧電振動板の大きさが限定されるので、搭載領域の無駄が生じやすい。集積回路素子とベースの電気的な接続領域と圧電振動板とベースの電気的な接続領域も別々に形成されるので搭載領域の拡大につながるものであった。   Further, since the size of the piezoelectric diaphragm disposed on the upper portion is limited according to the size of the storage portion for storing the integrated circuit element, the mounting area is likely to be wasted. The electrical connection region between the integrated circuit element and the base and the electrical connection region between the piezoelectric diaphragm and the base are also formed separately, leading to an increase in the mounting region.

そこで、上記課題を解決するために、本発明は、搭載領域の無駄をなくしながら小型化・低背化に対応した表面実装型圧電発振器とその製造方法を提供することを目的とする。   SUMMARY OF THE INVENTION In order to solve the above-described problems, an object of the present invention is to provide a surface-mount type piezoelectric oscillator and a method for manufacturing the same that can be reduced in size and height while eliminating waste in the mounting area.

上記の目的を達成するために、本発明の表面実装型圧電発振器では特許請求項1に示すように、励振電極と引出電極が形成された圧電振動板と一主面に配線パッドが形成された集積回路素子を有し、これらを収納する絶縁性のベースを有する表面実装型圧電発振器であって、前記ベースは上面側に側壁部と収納部、底面側に端子電極を有しており、前記収納部は内底面に前記集積回路素子が収納される第1の収納部と、当該第1の収納部の側壁部と接続された段差部と、前記圧電振動板が収納されるとともに前記第1の収納部と前記段差部の上面に配置される第2の収納部とが形成されており、表裏面に配線パターンが形成された板状の回路基板の上面側の配線パターンと前記圧電振動板の引出電極とが導電性接合材で接合され、当該回路基板の底面側の配線パターンと前記集積回路素子の配線パッドとが導電性接合材で接合されるとともに、当該回路基板のみにより圧電振動板と集積回路素子とがお互いに電気的に接続されてなり、前記段差部上面の配線パターンと前記回路基板の底面側の配線パターンの一部とが導電性接合材で接合されることで、回路基板の配線パターンが前記ベースの端子電極に導出されてなることを特徴とする。   In order to achieve the above object, according to the surface mount piezoelectric oscillator of the present invention, as shown in claim 1, a piezoelectric diaphragm on which an excitation electrode and an extraction electrode are formed, and a wiring pad is formed on one main surface. A surface-mount piezoelectric oscillator having an integrated circuit element and having an insulating base for storing these, wherein the base has a side wall portion and a storage portion on the top surface side, and a terminal electrode on the bottom surface side, The accommodating portion accommodates the first accommodating portion in which the integrated circuit element is accommodated on the inner bottom surface, the step portion connected to the side wall portion of the first accommodating portion, the piezoelectric diaphragm, and the first accommodating portion. A wiring pattern on the upper surface side of the plate-like circuit board on which the wiring pattern is formed on the front and back surfaces and the piezoelectric diaphragm Are connected to each other by a conductive bonding material. The bottom surface side wiring pattern and the wiring pad of the integrated circuit element are bonded with a conductive bonding material, and the piezoelectric diaphragm and the integrated circuit element are electrically connected to each other only by the circuit board, The wiring pattern on the circuit board is led out to the terminal electrode of the base by bonding the wiring pattern on the top surface of the stepped portion and a part of the wiring pattern on the bottom surface side of the circuit board with a conductive bonding material. It is characterized by.

上記構成により、表裏面に圧電振動板と集積回路素子が導電接合材により接合された板状の回路基板が前記ベースの段差部のみで導電性接合材により接合されているので、圧電振動板とベースとの電気的な接続領域、集積回路素子とベースの電気的な接続領域、および圧電振動板と集積回路素子との電気的な接続領域を別々にベースの側壁部、段差部、および収納部に形成する必要がなくなり、ベースの小型化・低背化に対応できる。   With the above configuration, the plate-like circuit board in which the piezoelectric vibration plate and the integrated circuit element are bonded to the front and back surfaces by the conductive bonding material is bonded by the conductive bonding material only at the step portion of the base. Separately connecting the electrical connection area with the base, the electrical connection area between the integrated circuit element and the base, and the electrical connection area between the piezoelectric diaphragm and the integrated circuit element. It is no longer necessary to form the base, and the base can be reduced in size and height.

また前記第1の収納部の平面積や集積回路素子の平面積に応じて搭載できる圧電振動板の大きさや保持形態が制限されることがなくなり、圧電発振器に使用する圧電振動板の設計の幅が飛躍的に広まり無駄がなくなる。特に第1の収納部より小さな圧電振動板でも容易に搭載でき、回路基板が圧電振動板を支えて第1の収納部に圧電振動板が傾いて搭載されることがない。   In addition, the size and holding form of the piezoelectric diaphragm that can be mounted according to the plane area of the first storage unit and the plane area of the integrated circuit element are not limited, and the width of the design of the piezoelectric diaphragm used for the piezoelectric oscillator is eliminated. Will spread dramatically and waste will be eliminated. In particular, even a piezoelectric diaphragm smaller than the first housing can be easily mounted, and the circuit board does not support the piezoelectric diaphragm and the piezoelectric diaphragm is not tilted and mounted in the first housing.

さらに駆動時に発熱した集積回路素子の熱的な悪影響も回路基板が間に介在していることで、圧電振動板に対してより軽減された状態で伝わり、周波数温度特性などの電気的特性の低下が少ない。   Furthermore, the thermal adverse effects of the integrated circuit elements that generate heat during driving are transmitted to the piezoelectric diaphragm in a more reduced state due to the interposition of the circuit board, and the electrical characteristics such as frequency temperature characteristics are degraded. Less is.

また、本発明の特許請求項2に示すように、上述の構成に加え、前記集積回路素子の配線パッドが形成されない主面が前記ベースの第1の収納部内底面に対して機械的に接合されてなり、前記回路基板の底面側の配線パターンと前記集積回路素子の配線パッド、および前記ベースの段差部の上面の配線パターンと前記回路基板の底面側の配線パターンとを金属バンプにより接合してなることを特徴とする。   According to a second aspect of the present invention, in addition to the above-described configuration, the main surface of the integrated circuit element where the wiring pads are not formed is mechanically bonded to the inner bottom surface of the first storage portion of the base. The wiring pattern on the bottom surface side of the circuit board, the wiring pad of the integrated circuit element, and the wiring pattern on the top surface of the step portion of the base and the wiring pattern on the bottom surface side of the circuit board are joined by metal bumps. It is characterized by becoming.

上記構成により、上述の作用効果に加えて、前記回路基板の底面側の配線パターンと前記集積回路素子の配線パッド、および前記ベースの段差部の上面の配線パターンとを金属バンプのみにより接合しているので、導電性樹脂接着剤やろう材を用いて接合する場合に比べて各接合領域が省スペースでかつ確実な電気的機械的な接合が行え、接合する際に不要なガスが発生することがない。このため段差部の面積をより縮小することができ、ベースのさらなる小型化に対応できるだけでなく、圧電発振器の電気的な性能に悪影響を与えることがないので、エージング特性を向上させることができる。   With the above configuration, in addition to the above-described effects, the wiring pattern on the bottom surface side of the circuit board, the wiring pad of the integrated circuit element, and the wiring pattern on the top surface of the stepped portion of the base are joined only by metal bumps. Therefore, compared to the case of bonding using conductive resin adhesive or brazing material, each bonding area is space-saving and reliable electromechanical bonding can be performed, and unnecessary gas is generated during bonding. There is no. For this reason, the area of the step portion can be further reduced, and not only can the size of the base be further reduced, but also the electrical performance of the piezoelectric oscillator is not adversely affected, so that the aging characteristics can be improved.

また、ワイヤボンディングを用いて集積回路素子とベースを接続する構成に比べて、ワイヤボンディングの上部に圧電振動板や回路基板などの他の部材が直接接触しないようなギャップとなる空間が不要となり、ベースの低背化により対応しやすい構成となる。   In addition, compared to a configuration in which the integrated circuit element and the base are connected using wire bonding, a space that becomes a gap so that other members such as a piezoelectric diaphragm and a circuit board are not in direct contact with the upper portion of the wire bonding becomes unnecessary. It becomes the structure that it is easy to cope with the low profile of the base.

さらに本発明ではベースの段差部と集積回路素子を介してベースの第1の収納部の上部に回路基板が接合されているので、ベースの機械的な曲げ強度を高めることができる。特にベースの曲げ強度を高めることで、シーム封止やビーム封止などの局所的な加熱で気密封止した際に生じやすいベースのクラックが抑制できる。   Furthermore, in the present invention, since the circuit board is joined to the upper portion of the first storage portion of the base via the step portion of the base and the integrated circuit element, the mechanical bending strength of the base can be increased. In particular, by increasing the bending strength of the base, it is possible to suppress cracks in the base that are likely to occur when hermetic sealing is performed by local heating such as seam sealing or beam sealing.

また、上述の構成に加え、これらに使用される金属バンプは同材質で同形状のものを用いることが好ましい。このような構成では、前記回路基板の底面側の配線パターンと前記集積回路素子の配線パッド、および前記ベースの段差部の上面の配線パターン間における金属バンプの接合強度を均一にできる。しかも同材質の金属バンプを用いることで接合条件が同じになるので、回路基板の上部から超音波を印加して同時にFCB接合することができ、その際の強度のバラツキが生じることもない。   In addition to the above-described configuration, it is preferable to use metal bumps of the same material and the same shape. With such a configuration, the bonding strength of the metal bumps between the wiring pattern on the bottom side of the circuit board, the wiring pad of the integrated circuit element, and the wiring pattern on the top surface of the stepped portion of the base can be made uniform. Moreover, since the bonding conditions are the same by using metal bumps of the same material, it is possible to apply ultrasonic waves from the top of the circuit board and simultaneously perform FCB bonding, and there is no variation in strength at that time.

また、本発明の特許請求項3に示すように、上述の構成に加え、前記集積回路素子の配線パッドが形成されない主面が前記ベースの第1の収納部内底面に対して機械的に接合されてなり、前記回路基板の底面側の配線パターンと前記集積回路素子の配線パッドを金属バンプにより接合してなり、前記ベースの段差部の上面の配線パターンと前記回路基板の底面側の配線パターンとを導電性樹脂接着材あるいは金属ろう材により接合してなることを特徴とする。   According to a third aspect of the present invention, in addition to the above-described configuration, the main surface of the integrated circuit element where the wiring pads are not formed is mechanically bonded to the inner bottom surface of the first storage portion of the base. A wiring pattern on the bottom side of the circuit board and a wiring pad of the integrated circuit element are joined by metal bumps, and a wiring pattern on the top surface of the stepped portion of the base and a wiring pattern on the bottom side of the circuit board, Are bonded with a conductive resin adhesive or a metal brazing material.

上記構成により、上述の作用効果に加えて、前記回路基板の底面側の配線パターンと前記集積回路素子の配線パッドを金属バンプにより接合してなり、前記ベースの段差部の上面の配線パターンと前記回路基板の底面側の配線パターンとを導電性樹脂接着材あるいは金属ろう材により接合しているので、ベースの段差部の平坦性のバラツキや前記回路基板とベースの段差部の隙間のバラツキを導電性樹脂接着材や金属ろう材の接合領域で吸収してより確実な電気的機械的な接合が行える。特に導電性樹脂接着材を用いた場合、圧電振動板に対する外部衝撃がやわらげられるので、耐衝撃性能が向上する。   With the above configuration, in addition to the above-described effects, the wiring pattern on the bottom surface side of the circuit board and the wiring pad of the integrated circuit element are joined by metal bumps, and the wiring pattern on the top surface of the stepped portion of the base Since the wiring pattern on the bottom side of the circuit board is joined with a conductive resin adhesive or a metal brazing material, the unevenness of the flatness of the stepped portion of the base and the gap of the stepped portion of the circuit board and the base are electrically conductive. More reliable electromechanical joining can be achieved by absorbing in the joining region of the conductive resin adhesive or metal brazing material. In particular, when a conductive resin adhesive is used, the impact resistance is improved because the external impact on the piezoelectric diaphragm is softened.

また、ワイヤボンディングを用いて集積回路素子とベースを接続する構成に比べて、ワイヤボンディングの上部に圧電振動板や回路基板などの他の部材が直接接触しないようなギャップとなる空間が不要となり、ベースの低背化により対応しやすい構成となる。   In addition, compared to a configuration in which the integrated circuit element and the base are connected using wire bonding, a space that becomes a gap that prevents other members such as a piezoelectric diaphragm and a circuit board from directly contacting the upper portion of the wire bonding becomes unnecessary. It becomes the structure that it is easy to cope with the low profile of the base.

さらに本発明ではベースの段差部と集積回路素子を介してベースの第1の収納部の上部に回路基板が接合されているので、ベースの機械的な曲げ強度を高めることができる。特にベースの曲げ強度を高めることで、シーム封止やビーム封止などの局所的な加熱で気密封止した際に生じやすいベースのクラックが抑制できる。   Furthermore, in the present invention, since the circuit board is joined to the upper portion of the first storage portion of the base via the step portion of the base and the integrated circuit element, the mechanical bending strength of the base can be increased. In particular, by increasing the bending strength of the base, it is possible to suppress cracks in the base that are likely to occur when hermetic sealing is performed by local heating such as seam sealing or beam sealing.

上記の目的を達成するために、本発明の表面実装型圧電発振器の製造方法では特許請求項4に示すように、励振電極と引出電極が形成された圧電振動板と、一主面に配線パッドが形成された集積回路素子と、前記集積回路素子が収納される第1の収納部と、当該第1の収納部の側壁部と接続された段差部と当該段差部上面に形成された配線パターンと、前記圧電振動板が収納されるとともに前記第1の収納部と前記段差部の上面に配置される第2の収納部とが形成されたベースと、表裏面に配線パターンが形成され、当該表裏の配線パターンがお互いに電気的に接続された板状の回路基板とを有する表面実装型圧電発振器の製造方法であって、前記集積回路素子の配線パッドが形成されない他主面を前記ベースの第1の収納部内底面にダイボンディングする工程と、前記集積回路素子の配線パッドと前記ベースの段差部の配線パターン、あるいは前記回路基板の裏面側の配線パターンのうちの少なくとも一方に金属バンプを形成する工程と、前記集積回路素子の配線パッドと前記ベースの段差部の配線パッドに対して前記金属バンプが介在した状態で前記回路基板の裏面側の配線パターンを重ね合わせて超音波接合することでお互いに電気的機械的に接合する工程と、前記集積回路素子とベースに接合された回路基板の上面側の配線パターンに対して圧電振動板の引出電極とを導電性接合材により接合する工程とからなることを特徴とする。   In order to achieve the above object, according to the method of manufacturing a surface-mounted piezoelectric oscillator of the present invention, as shown in claim 4, a piezoelectric diaphragm having an excitation electrode and an extraction electrode, and a wiring pad on one main surface An integrated circuit element formed with a first storage part in which the integrated circuit element is stored, a step part connected to the side wall part of the first storage part, and a wiring pattern formed on the top surface of the step part And a base on which the piezoelectric diaphragm is stored and the first storage part and a second storage part disposed on the top surface of the stepped part are formed, and a wiring pattern is formed on the front and back surfaces, A method of manufacturing a surface-mount piezoelectric oscillator having a plate-like circuit board in which front and back wiring patterns are electrically connected to each other, wherein the other main surface on which the wiring pads of the integrated circuit element are not formed is formed on the base. Dive on the bottom of the first storage Forming a metal bump on at least one of the wiring pattern of the integrated circuit element and the wiring pattern of the stepped portion of the base, or the wiring pattern on the back side of the circuit board, and the integrated circuit element The wiring pads on the back side of the circuit board are superposed on each other and ultrasonically joined to each other with the metal bumps interposed between the wiring pads of the step and the stepped portion of the base, thereby being electrically and mechanically joined to each other. And a step of bonding the lead electrode of the piezoelectric diaphragm to the wiring pattern on the upper surface side of the circuit board bonded to the integrated circuit element and the base with a conductive bonding material.

上記製造方法により、前記回路基板の上部から超音波ボンディングツールを用いて、前記集積回路素子、前記ベース、および前記回路基板の三つを同時に極めて容易かつ効率的に電気的機械的に超音波接合することができる。これらが接合された回路基板の上面側に対して圧電振動板を導電性接合材により接合するので、第1の収納部に対して圧電振動板が落ち込んだり傾くことがなくなり、より安定した状態で圧電振動板と回路基板の接合が行える。   By the above manufacturing method, the ultrasonic bonding tool is used from the upper part of the circuit board, and the integrated circuit element, the base, and the circuit board are simultaneously and extremely easily and efficiently electrically and ultrasonically bonded. can do. Since the piezoelectric vibration plate is bonded to the upper surface side of the circuit board to which these are bonded by the conductive bonding material, the piezoelectric vibration plate does not drop or tilt with respect to the first storage portion, and is in a more stable state. The piezoelectric diaphragm and circuit board can be joined.

以上のように、本発明は、搭載領域の無駄をなくしながら小型化・低背化に対応した表面実装型圧電発振器とその製造方法を提供することができる。   As described above, the present invention can provide a surface-mounted piezoelectric oscillator and a method for manufacturing the same that can be reduced in size and height while eliminating waste in the mounting area.

以下、本発明による好ましい実施の形態について図面に基づいて説明する。本発明による実施形態につき表面実装型水晶発振器を例にとり図面とともに説明する。図1は本発明の実施の形態を示す断面図、図2は本発明の実施の形態を示す蓋をする前の平面図、図3は本発明の実施の形態を示す回路基板の平面図、図4は図3の底面図、図5は本発明の実施の形態にかかる表面実装型水晶発振器の概略工程図である。   Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. An embodiment according to the present invention will be described with reference to the drawings by taking a surface-mounted crystal oscillator as an example. FIG. 1 is a cross-sectional view showing an embodiment of the present invention, FIG. 2 is a plan view before a cover showing the embodiment of the present invention, FIG. 3 is a plan view of a circuit board showing the embodiment of the present invention, FIG. 4 is a bottom view of FIG. 3, and FIG. 5 is a schematic process diagram of the surface-mount crystal oscillator according to the embodiment of the present invention.

表面実装型水晶発振器は、上部が開口した凹部を有するセラミックベース1(絶縁性のベース)と、当該セラミックベースの中に収納される集積回路素子2と、同じく当該セラミックベース中の上部に収納される圧電振動板3と、当該圧電振動板を搭載する回路基板4と、セラミックベースの開口部に接合される蓋5とからなる。   The surface-mount type crystal oscillator is housed in a ceramic base 1 (insulating base) having a recess with an upper opening, an integrated circuit element 2 housed in the ceramic base, and the upper part in the ceramic base. A piezoelectric diaphragm 3, a circuit board 4 on which the piezoelectric diaphragm is mounted, and a lid 5 joined to the opening of the ceramic base.

セラミックベース1は全体として直方体で、アルミナ等のセラミックとタングステンあるいはモリブデン等の導電材料を適宜積層した構成であり、断面で見て上面側に堤部(側壁部)11と収納部10を有し、底面側に端子電極14を有する略凹形状に構成されている。収納部10は第1の収納部10aと第2の収納部10bからなり、それぞれ集積回路素子2と圧電振動板3が収納される。収納部周囲には堤部(側壁部)11が形成されており、堤部11の上面は平坦であり、当該堤部上に周状の封止用部材11aが形成されている。当該封止用部材として例えば、タングステンあるいはモリブデンなどのメタライズ層が主体となるもの、コバールなどの金属リングが主体となるものがあげられる。   The ceramic base 1 is a rectangular parallelepiped as a whole, and is configured by appropriately laminating a ceramic such as alumina and a conductive material such as tungsten or molybdenum, and has a bank portion (side wall portion) 11 and a storage portion 10 on the upper surface side when viewed in cross section. The terminal electrode 14 is formed in a substantially concave shape on the bottom side. The storage unit 10 includes a first storage unit 10a and a second storage unit 10b, in which the integrated circuit element 2 and the piezoelectric diaphragm 3 are stored. A bank portion (side wall portion) 11 is formed around the storage portion, and the upper surface of the bank portion 11 is flat, and a circumferential sealing member 11a is formed on the bank portion. Examples of the sealing member include a member mainly composed of a metallized layer such as tungsten or molybdenum, and a member mainly composed of a metal ring such as kovar.

セラミックベース1内部において、内底面には前述のとおり集積回路素子2を収納する第1の収納部10aが形成され、当該第1の収納部の側壁部と接続された段差部10cとが形成されており、後述する圧電振動板3が収納されるとともに前記第1の収納部と前記段差部の上面に配置される第2の収納部10bとが形成されている。   Inside the ceramic base 1, the first storage portion 10a for storing the integrated circuit element 2 is formed on the inner bottom surface as described above, and the step portion 10c connected to the side wall portion of the first storage portion is formed. The piezoelectric diaphragm 3 to be described later is housed, and the first housing portion and the second housing portion 10b disposed on the upper surface of the stepped portion are formed.

前記段差部10cの上面には配線パターン12a,12b,12c,12dが形成されており、図示しないキャスタレーションや導電ビアを介して最終的にセラミックベースの底面に形成された端子電極14へと導かれるように構成されている。このような構成のセラミックベースは周知のセラミック積層技術やメタライズ技術を用いて形成され、前記各配線パターンは前述の金属層11a形成と同様にタングステンあるいはモリブデン等によるメタライズ層の上面にニッケルメッキ層、金メッキ層の各層が形成された構成である。   Wiring patterns 12a, 12b, 12c, and 12d are formed on the upper surface of the stepped portion 10c, and led to a terminal electrode 14 that is finally formed on the bottom surface of the ceramic base through casters and conductive vias (not shown). It is configured to be. The ceramic base having such a structure is formed using a known ceramic lamination technique or metallization technique, and each wiring pattern is formed with a nickel plating layer on the upper surface of the metallization layer made of tungsten, molybdenum, or the like, similar to the formation of the metal layer 11a. In this configuration, each gold plating layer is formed.

前記第1の収納部に搭載される集積回路素子2は、圧電振動板3とともに発振回路を構成する1チップ集積回路素子であり、その上面には複数の配線パッドPが形成されている。当該集積回路素子2は、配線パッドが形成されない底面側で例えば樹脂接着剤Jを介して前記ベースの第1の収納部の内底面に対して機械的に接合されている。   The integrated circuit element 2 mounted in the first housing portion is a one-chip integrated circuit element that constitutes an oscillation circuit together with the piezoelectric diaphragm 3, and a plurality of wiring pads P are formed on the upper surface thereof. The integrated circuit element 2 is mechanically bonded to the inner bottom surface of the first storage portion of the base via, for example, a resin adhesive J on the bottom surface side where no wiring pad is formed.

前記集積回路素子2の上方には所定の間隔をもって、エポキシ系樹脂基板やイミド系樹脂基板、セラミック基板、ガラス基板、水晶基板などからなる回路基板4が搭載される。この回路基板4は厚さを例えば200μ以下に設定しているおり、セラミックベース1の低背化を妨げることがない。回路基板4は、図3に示すようにその上面側には後述する圧電振動板3と接続される第2の配線パターン42a,42bが形成され、図4に示すようにその底面側には前記集積回路素子2と接続される例えば6つの第1の配線パターン41a,41b,41c,41d,41e,41fが複数並んで形成されている。このうち第2の配線パターン42aは図示しないキャスタレーションや導電ビアにより前記第1の配線パターン41cに接続されており、第2の配線パターン42bは図示しないキャスタレーションや導電ビアにより前記第1の配線パターン41bに接続されている。   A circuit substrate 4 made of an epoxy resin substrate, an imide resin substrate, a ceramic substrate, a glass substrate, a quartz substrate, or the like is mounted above the integrated circuit element 2 with a predetermined interval. The circuit board 4 is set to have a thickness of, for example, 200 μm or less, and does not hinder a reduction in the height of the ceramic base 1. As shown in FIG. 3, the circuit board 4 has second wiring patterns 42a and 42b connected to a piezoelectric diaphragm 3 to be described later formed on the upper surface side, and the bottom surface side of the circuit board 4 has the above-mentioned structure on the bottom surface side as shown in FIG. For example, a plurality of six first wiring patterns 41a, 41b, 41c, 41d, 41e, and 41f connected to the integrated circuit element 2 are formed side by side. Among these, the second wiring pattern 42a is connected to the first wiring pattern 41c by a castellation or conductive via (not shown), and the second wiring pattern 42b is connected to the first wiring by a castellation or conductive via (not shown). It is connected to the pattern 41b.

そして、前記回路基板4の第1の配線パターン41a,41b,41c,41d,41e,41fの一端部と、これらの第1の配線パターンの位置に対応して前記第1の収納部に搭載された集積回路素子2の上面の複数の配線パッドPとが金などの金属バンプC(導電性接合材)を介してFCBにより接続されるとともに、前記セラミックベース1の配線パターン12a,12b,12c,12dと、これらの配線パターンの位置に対応して前記回路基板4の第1の配線パターン41a,41d,41e,41fの他端部とが同じく金などの金属バンプCを介してFCBにより接続される。   Then, the first wiring patterns 41a, 41b, 41c, 41d, 41e, and 41f of the circuit board 4 are mounted on the first storage portion corresponding to the positions of the first wiring patterns and the positions of the first wiring patterns. The plurality of wiring pads P on the upper surface of the integrated circuit element 2 are connected by FCB through metal bumps C (conductive bonding material) such as gold, and the wiring patterns 12a, 12b, 12c, 12d and the other end portions of the first wiring patterns 41a, 41d, 41e, and 41f of the circuit board 4 are connected by FCB via metal bumps C such as gold corresponding to the positions of these wiring patterns. The

前記回路基板4の上方には所定の間隔をもって、圧電振動板3が搭載される。圧電振動板3は例えば矩形状のATカット水晶振動板であり、その表裏面に対向して一対の矩形状励振電極31,32(32については図示せず)と、この励振電極を前記回路基板の上面側に形成された第2の配線パターン42a,42bと導通するための引出電極33,34とが形成されている。なお図示していないが圧電振動板3の表裏両主面に対して引出電極33,34が引き回して形成されており、圧電振動板の表裏主面のどちらでも搭載できるように構成されている。これらの各電極は、クロムやニッケルなどの下地電極層と、銀や金などを主材料とする電極層とから構成された積層薄膜である。これら各電極は真空蒸着法やスパッタリング法等の薄膜形成手段により形成することができる。   A piezoelectric diaphragm 3 is mounted above the circuit board 4 at a predetermined interval. The piezoelectric diaphragm 3 is, for example, a rectangular AT-cut quartz diaphragm, a pair of rectangular excitation electrodes 31 and 32 (32 is not shown) facing the front and back surfaces of the piezoelectric diaphragm 3 and the circuit board. Lead electrodes 33 and 34 are formed to be electrically connected to the second wiring patterns 42a and 42b formed on the upper surface side of the first and second wiring patterns 42a and 42b. Although not shown in the drawing, the lead electrodes 33 and 34 are formed around the front and back main surfaces of the piezoelectric diaphragm 3 so as to be mounted on either the front or back main surface of the piezoelectric diaphragm. Each of these electrodes is a laminated thin film composed of a base electrode layer such as chromium or nickel and an electrode layer mainly composed of silver or gold. Each of these electrodes can be formed by a thin film forming means such as a vacuum deposition method or a sputtering method.

圧電振動板3と回路基板4との接合は、例えばペースト状であり銀フィラー等の金属微小片を含有するシリコーン系の導電性樹脂接着剤S(導電性接合材)を用いている。前記集積回路素子2とセラミックベース1に接合された回路基板4の上面側の第2の配線パターン42a,42bに対して、前記圧電振動板3の引出電極33,34が、例えばペースト状であり銀フィラー等の金属微小片を含有するシリコーン系の導電性樹脂接着剤S(導電性接合材)を用いて、お互いを電気的機械的に接合し、例えば図1に示すように、片持ち保持されている。なお、導電性接合材として本形態で示したシリコーン系の導電性樹脂接着剤に限らず、他の樹脂剤でもよく、さらにはんだ等の金属ろう材や金属バンプ、金属めっきバンプを用いてもよい。   The piezoelectric diaphragm 3 and the circuit board 4 are joined using, for example, a silicone-based conductive resin adhesive S (conductive bonding material) that is in a paste form and contains metal fine pieces such as silver filler. With respect to the second wiring patterns 42a and 42b on the upper surface side of the circuit board 4 joined to the integrated circuit element 2 and the ceramic base 1, the extraction electrodes 33 and 34 of the piezoelectric diaphragm 3 are, for example, in the form of paste. Using a silicone-based conductive resin adhesive S (conductive bonding material) containing fine metal pieces such as a silver filler, they are electrically and mechanically bonded to each other, and cantilevered, for example, as shown in FIG. Has been. Note that the conductive bonding material is not limited to the silicone-based conductive resin adhesive shown in this embodiment, and other resin agents may be used. Further, a metal brazing material such as solder, a metal bump, or a metal plating bump may be used. .

セラミックベース1を気密封止する蓋5は、例えば、コバール等からなるコア材に金属ろう材などの封止材が形成された構成であり、より詳しくは、例えば上面からニッケル層、コバールコア材、銅層、銀ろう層の順の多層構成であり、銀ろう層がセラミックベースの金属層と接合される構成となる。金属製の蓋の平面視外形はセラミックベースの当該外形とほぼ同じであるか、若干小さい構成となっている。   The lid 5 for hermetically sealing the ceramic base 1 has a configuration in which a sealing material such as a metal brazing material is formed on a core material made of, for example, Kovar. More specifically, for example, a nickel layer, a Kovar core material, The multilayer structure is an order of a copper layer and a silver brazing layer, and the silver brazing layer is joined to a ceramic-based metal layer. The external shape of the metal lid in plan view is substantially the same as or slightly smaller than that of the ceramic base.

収納部10に集積回路素子2と回路基板4、圧電振動板3が格納されたセラミックベース1を前記金属製の蓋5にて被覆し、金属製の蓋5の封止材とセラミックベースの封止用部材11aを溶融硬化させ、気密封止を行うことで表面実装型圧電発振器の完成となる。本実施の形態においては、封止用の金属リングを用いないシーム溶接による気密封止を行っており、前記金属製の蓋5の長辺と短辺の稜部に沿ってシームローラを走行させることで、金属製の蓋5に形成された銀ろう(封止材)とセラミックベース1の金属層11a(封止用部材)を溶接させ、気密封止が行われる。   The ceramic base 1 in which the integrated circuit element 2, the circuit board 4, and the piezoelectric diaphragm 3 are stored in the storage unit 10 is covered with the metal lid 5, and the sealing material for the metal lid 5 and the sealing of the ceramic base are covered. The surface mounting type piezoelectric oscillator is completed by melt-curing the stopper member 11a and performing hermetic sealing. In the present embodiment, airtight sealing is performed by seam welding without using a metal ring for sealing, and the seam roller runs along the long side and short side ridges of the metal lid 5. Thus, the silver brazing (sealing material) formed on the metal lid 5 and the metal layer 11a (sealing member) of the ceramic base 1 are welded to perform hermetic sealing.

なお上記実施形態に限らず、図6に示すように、前記第1の収納部に搭載される集積回路素子2は、金属バンプCを介して前記回路基板4のみで電気的機械的に接合されるだけで、前記セラミックベースの第1の収納部の内底面に対して所定の隙間寸法が介在した状態で第1の収納部の内底面に対して機械的に接合されない構成であってもよい。この構成では予め集積回路素子2のみが金属バンプCを介してFCB接合された回路基板4をセラミックベース1の段差部10cに対して再び金属バンプCを介してFCB接合することで容易に得られる。   Note that the integrated circuit element 2 mounted in the first storage portion is not only limited to the above embodiment, but is electrically and mechanically joined only by the circuit board 4 via the metal bumps C, as shown in FIG. In other words, the ceramic base may be configured not to be mechanically joined to the inner bottom surface of the first storage portion with a predetermined gap dimension interposed between the inner bottom surface of the first storage portion of the ceramic base. . In this configuration, the circuit board 4 in which only the integrated circuit element 2 is FCB-bonded in advance via the metal bump C can be easily obtained by FCB-bonding again to the step portion 10c of the ceramic base 1 via the metal bump C. .

次に、上記した表面実装型水晶発振器の製造工程の一例について、図5とともに説明する。   Next, an example of the manufacturing process of the surface mount crystal oscillator described above will be described with reference to FIG.

図5(a)に示す工程では、前記集積回路素子2を収納する第1の収納部10aと、当該第1の収納部の側壁部と接続された段差部10cと、当該段差部上面の配線パターン12a,12b,12c,12dと、前記圧電振動板3が収納されるとともに前記第1の収納部と前記段差部の上面に配置される第2の収納部10bとが形成されたセラミックベース1を準備している。   In the step shown in FIG. 5A, the first storage portion 10a for storing the integrated circuit element 2, the step portion 10c connected to the side wall portion of the first storage portion, and the wiring on the top surface of the step portion. Ceramic base 1 in which patterns 12a, 12b, 12c, and 12d, the piezoelectric diaphragm 3 are accommodated, and the first accommodating portion and the second accommodating portion 10b disposed on the upper surface of the stepped portion are formed. Are preparing.

図5(b)に示す工程では、前記集積回路素子2の配線パッドが形成されない他主面を前記ベースの第1の収納部10aの内底面に対して、例えば樹脂接着剤Jを介して機械的に接合している(ダイボンディングする工程)。   In the step shown in FIG. 5B, the other main surface where the wiring pads of the integrated circuit element 2 are not formed is machined, for example, via a resin adhesive J with respect to the inner bottom surface of the first storage portion 10a of the base. Are bonded together (die bonding step).

図5(c)に示す工程では、前記集積回路素子2の上面の複数の配線パッドPの上部、および前記ベースの段差部の配線パターン12a,12b,12c,12dの上部に対して、金などの金属バンプC(導電性接合材)を熱圧着等のワイヤボンディング技術を用いたバンプボンダにより図示しないボンディングツール(キャピラリ等)から連続して形成される。なお、この金属バンプCの形成は、前記回路基板4の第1の配線パターン41a,41b,41c,41d,41e,41fの上部に対してのみ同様の手法により形成してもよく、前記配線パッドPと前記配線パターン12a,12b,12c,12dの上部だけでなく、前記第1の配線パターン41a,41b,41c,41d,41e,41fの上部にも同様の手法により金属バンプCを両方とも形成してもよい。   In the step shown in FIG. 5C, gold or the like is applied to the upper portions of the plurality of wiring pads P on the upper surface of the integrated circuit element 2 and the upper portions of the wiring patterns 12a, 12b, 12c, 12d of the stepped portion of the base. The metal bump C (conductive bonding material) is continuously formed from a bonding tool (capillary or the like) (not shown) by a bump bonder using a wire bonding technique such as thermocompression bonding. The metal bumps C may be formed only on the upper portions of the first wiring patterns 41a, 41b, 41c, 41d, 41e, and 41f of the circuit board 4 by the same method. Both metal bumps C are formed not only on P and the upper parts of the wiring patterns 12a, 12b, 12c and 12d but also on the upper parts of the first wiring patterns 41a, 41b, 41c, 41d, 41e and 41f by the same method. May be.

図5(d)に示す工程では、前記集積回路素子2の配線パッドPと前記ベースの段差部の配線パターン12a,12b,12c,12dに対して前記金属バンプCが介在した状態で前記回路基板4の裏面側の第1の配線パターン41a,41b,41c,41d,41e,41fを重ね合わせ、図示しないボンディングツール(超音波ウェルダ等)により回路基板4を金属バンプC上に押しつけ、静圧力を印加する。つまり、ボンディングツールを所定の周波数で振動させることにより、集積回路素子2と回路基板4、および回路基板4とセラミックベース1とを金属バンプCを介してFCB(Flip Chip Bonding)法により上記ボンディングツールにより超音波接合され、お互いに電気的機械的に接合する。   In the step shown in FIG. 5D, the circuit board is formed with the metal bumps C interposed between the wiring pads P of the integrated circuit element 2 and the wiring patterns 12a, 12b, 12c, 12d of the stepped portion of the base. The first wiring patterns 41a, 41b, 41c, 41d, 41e, and 41f on the back surface side of 4 are superposed and the circuit board 4 is pressed onto the metal bumps C by a bonding tool (such as an ultrasonic welder) (not shown) to apply a static pressure. Apply. That is, by vibrating the bonding tool at a predetermined frequency, the bonding tool is connected to the integrated circuit element 2 and the circuit board 4 and the circuit board 4 and the ceramic base 1 through the metal bump C by the FCB (Flip Chip Bonding) method. Are ultrasonically bonded to each other and are electrically and mechanically bonded to each other.

図5(e)に示す工程では、前記集積回路素子2とセラミックベース1に接合された回路基板4の上面側の第2の配線パターン42a,42bと前記圧電振動板3の引出電極33,34との間に、例えばペースト状であり銀フィラー等の金属微小片を含有するシリコーン系の導電性樹脂接着剤S(導電性接合材)が介在しており、加熱により硬化させることで、お互いを電気的機械的に接合している。   5E, the second wiring patterns 42a and 42b on the upper surface side of the circuit board 4 bonded to the integrated circuit element 2 and the ceramic base 1 and the extraction electrodes 33 and 34 of the piezoelectric diaphragm 3 are used. In between, a silicone-based conductive resin adhesive S (conductive bonding material) that is, for example, in the form of a paste and contains fine metal pieces such as a silver filler is interposed. Electromechanically joined.

その後、周波数調整工程やアニーリング工程などの必要な処理を行い、蓋5により気密封止を行うことで表面実装型圧電発振器の完成となる。   Thereafter, necessary processes such as a frequency adjustment process and an annealing process are performed, and airtight sealing is performed with the lid 5 to complete the surface-mount piezoelectric oscillator.

なお上記実施形態の製造方法に限らず、予め集積回路素子2のみを回路基板4に対して金属バンプCを介してFCB接合し、セラミックベースの段差部10c等に金属バンプCを取り付け、回路基板4とセラミックベース1のみを金属バンプCを介してFCB接合した後に、回路基板4とセラミックベース1の隙間からノズルを差し込むことで前記集積回路素子2の配線パッドが形成されない他主面を前記セラミックベースの第1の収納部10aの内底面に対して、例えば樹脂接着剤Jを介して機械的に接合してもよい。また、上記ダイボンディングする工程を省略して、予め集積回路素子2のみを回路基板4に対して金属バンプCを介してFCB接合した後に、セラミックベースの段差部10c等に金属バンプCを取り付け、回路基板4とセラミックベース1のみを金属バンプCを介してFCB接合してもよい。   The circuit board is not limited to the manufacturing method of the above embodiment, but only the integrated circuit element 2 is FCB bonded to the circuit board 4 via the metal bumps C in advance, and the metal bumps C are attached to the step portions 10c of the ceramic base. 4 and the ceramic base 1 are FCB bonded via the metal bumps C, and then the nozzle is inserted through the gap between the circuit board 4 and the ceramic base 1 so that the wiring board of the integrated circuit element 2 is not formed on the other main surface. For example, a resin adhesive J may be mechanically bonded to the inner bottom surface of the base first storage portion 10a. Further, the step of die bonding is omitted, and only the integrated circuit element 2 is FCB bonded to the circuit board 4 via the metal bumps C in advance, and then the metal bumps C are attached to the step portions 10c of the ceramic base, Only the circuit board 4 and the ceramic base 1 may be FCB bonded via the metal bumps C.

上記本発明の実施形態により、表裏面に圧電振動板3と集積回路素子2が導電性樹脂接着剤Sと金属バンプCにより接合された板状の回路基板4が前記セラミックベース1の段差部10cのみで金属バンプCにより接合されているので、圧電振動板3とセラミックベース1との電気的な接続領域、集積回路素子2とセラミックベース1の電気的な接続領域、および圧電振動板3と集積回路素子2との電気的な接続領域を別々にセラミックベースの堤部(側壁部)11、段差部10c、および収納部10に対して形成する必要がなくなり、セラミックベース1の小型化・低背化に対応できる。   According to the embodiment of the present invention, the plate-like circuit board 4 in which the piezoelectric diaphragm 3 and the integrated circuit element 2 are bonded to the front and back surfaces by the conductive resin adhesive S and the metal bumps C is formed on the step portion 10c of the ceramic base 1. Only by the metal bumps C, the electrical connection region between the piezoelectric diaphragm 3 and the ceramic base 1, the electrical connection region between the integrated circuit element 2 and the ceramic base 1, and the integration with the piezoelectric diaphragm 3. There is no need to separately form an electrical connection area with the circuit element 2 for the dam part (side wall part) 11, the step part 10c, and the storage part 10 of the ceramic base, and the ceramic base 1 can be reduced in size and height. Can respond to

また前記第1の収納部10aの平面積や集積回路素子2の平面積に応じて搭載できる圧電振動板3の大きさや保持形態が制限されることがなくなり、圧電発振器に使用する圧電振動板3の設計の幅が飛躍的に広まり無駄がなくなる。特に第1の収納部10aより小さな圧電振動板3でも容易に搭載でき、回路基板4が圧電振動板3を支えて第1の収納部10aに圧電振動板3が傾いて搭載されることがない。   Further, the size and holding form of the piezoelectric diaphragm 3 that can be mounted according to the plane area of the first storage portion 10a and the plane area of the integrated circuit element 2 are not limited, and the piezoelectric diaphragm 3 used for the piezoelectric oscillator is not limited. The breadth of design is dramatically increased and there is no waste. In particular, even the piezoelectric diaphragm 3 smaller than the first housing part 10a can be easily mounted, and the circuit board 4 supports the piezoelectric diaphragm 3 and the piezoelectric diaphragm 3 is not tilted and mounted in the first housing part 10a. .

さらに駆動時に発熱した集積回路素子2の熱的な悪影響も回路基板4が間に介在していることで、圧電振動板3に対してより軽減された状態で伝わり、周波数温度特性などの電気的特性の低下が少ない。   Furthermore, the thermal adverse effect of the integrated circuit element 2 that generates heat during driving is transmitted to the piezoelectric diaphragm 3 in a more reduced state due to the interposition of the circuit board 4, and electrical characteristics such as frequency temperature characteristics are transmitted. There is little deterioration in characteristics.

また、前記回路基板4の底面側の第1の配線パターン41a,41b,41c,41d,41e,41fと前記集積回路素子2の配線パッドP、および前記ベースの段差部の上面の配線パターン12a,12b,12c,12dとを金属バンプCのみにより接合しているので、導電性樹脂接着剤やろう材を用いて接合する場合に比べて各接合領域が省スペースでかつ確実な電気的機械的な接合が行え、接合する際に不要なガスが発生することがない。このため段差部10cの面積をより縮小することができ、セラミックベース1のさらなる小型化に対応できるだけでなく、圧電発振器の電気的な性能に悪影響を与えることがないので、エージング特性を向上させることができる。   Further, the first wiring patterns 41a, 41b, 41c, 41d, 41e, 41f on the bottom surface side of the circuit board 4, the wiring pads P of the integrated circuit element 2, and the wiring patterns 12a on the upper surface of the stepped portion of the base. Since 12b, 12c, and 12d are joined only by the metal bump C, each joining area is space-saving and reliable electromechanical compared to the case of joining using a conductive resin adhesive or brazing material. Bonding can be performed, and no unnecessary gas is generated during bonding. As a result, the area of the stepped portion 10c can be further reduced, and not only can the size of the ceramic base 1 be further reduced, but also the electrical performance of the piezoelectric oscillator is not adversely affected, thereby improving the aging characteristics. Can do.

また、ワイヤボンディングを用いて集積回路素子2とセラミックベース1を接続する構成に比べて、ワイヤボンディングの上部に圧電振動板3や回路基板4などの他の部材が直接接触しないようなギャップとなる空間が不要となり、セラミックベース1の低背化により対応しやすい構成となる。   Further, compared to a configuration in which the integrated circuit element 2 and the ceramic base 1 are connected using wire bonding, the gap is such that other members such as the piezoelectric diaphragm 3 and the circuit board 4 are not in direct contact with the upper part of the wire bonding. A space is not required, and the ceramic base 1 has a low profile and can be easily handled.

さらに本発明ではセラミックベースの段差部10cと集積回路素子2を介してセラミックベースの第1の収納部10aの上部に回路基板4が接合されているので、セラミックベース1の機械的な曲げ強度を高めることができる。特にセラミックベースの曲げ強度を高めることで、シーム封止やビーム封止などの局所的な加熱で気密封止した際に生じやすいセラミックベースのクラックが抑制できる。   Furthermore, in the present invention, since the circuit board 4 is joined to the upper portion of the ceramic base first storage portion 10a via the ceramic base step portion 10c and the integrated circuit element 2, the mechanical bending strength of the ceramic base 1 is increased. Can be increased. In particular, by increasing the bending strength of the ceramic base, it is possible to suppress cracks in the ceramic base that are likely to occur when hermetic sealing is performed by local heating such as seam sealing or beam sealing.

また、本実施形態では金属バンプCを金などからなる同材質で同形状のものを用いるため、前記回路基板の底面側の第1の配線パターン41a,41b,41c,41d,41e,41fと前記集積回路素子2の配線パッドP、および前記ベースの段差部の上面の配線パターン12a,12b,12c,12d間における金属バンプCの接合強度を均一にできる。しかも同材質の金属バンプCを用いることで接合条件が同じになるので、回路基板4の上部から超音波を印加して同時にFCB接合することができ、その際の強度のバラツキが生じることもない。   Further, in the present embodiment, since the metal bump C is made of the same material made of gold or the like and has the same shape, the first wiring patterns 41a, 41b, 41c, 41d, 41e, 41f on the bottom surface side of the circuit board and the above-mentioned The bonding strength of the metal bumps C between the wiring pads P of the integrated circuit element 2 and the wiring patterns 12a, 12b, 12c, 12d on the upper surface of the stepped portion of the base can be made uniform. Moreover, since the bonding conditions are the same by using the metal bumps C of the same material, it is possible to apply ultrasonic waves from the upper part of the circuit board 4 and perform the FCB bonding at the same time, and there is no variation in strength at that time. .

また、本実施形態の製造方法により、前記回路基板4の上部から超音波ボンディングツールを用いて、前記集積回路素子2、前記セラミックベース1、および前記回路基板4の三つを同時に極めて容易かつ効率的に電気的機械的に超音波接合することができる。これらが接合された回路基板4の上面側に対して圧電振動板3を導電性樹脂接着剤Sにより接合するので、第1の収納部10aに対して圧電振動板3が落ち込んだり傾くことがなくなり、より安定した状態で圧電振動板3と回路基板4の接合が行える。   Further, according to the manufacturing method of the present embodiment, the integrated circuit element 2, the ceramic base 1, and the circuit board 4 can be extremely easily and efficiently simultaneously using an ultrasonic bonding tool from above the circuit board 4. In addition, ultrasonic bonding can be performed electrically and mechanically. Since the piezoelectric vibration plate 3 is bonded to the upper surface side of the circuit board 4 to which they are bonded by the conductive resin adhesive S, the piezoelectric vibration plate 3 does not drop or tilt with respect to the first storage portion 10a. Thus, the piezoelectric diaphragm 3 and the circuit board 4 can be joined in a more stable state.

本発明の他の実施形態について、図7とともに説明する。図7は本発明の他の実施の形態を示す断面図である。なお、基本構成は上述の実施の形態と同じであるので、同じ構成部分については同番号を用いるとともに、相違点のみを説明する。   Another embodiment of the present invention will be described with reference to FIG. FIG. 7 is a cross-sectional view showing another embodiment of the present invention. Since the basic configuration is the same as that of the above-described embodiment, the same reference numerals are used for the same components, and only differences will be described.

前記第1の収納部に搭載される集積回路素子2は、配線パッドが形成されない底面側で例えば樹脂接着剤Jを介して前記ベースの第1の収納部の内底面に対して機械的に接合されている。前記集積回路素子2の上方には所定の間隔をもって回路基板4が搭載される。この際、本変形例では、前記回路基板4の第1の配線パターン41a,41b,41c,41d,41e,41fと、これらの第1の配線パターンの位置に対応して前記第1の収納部に搭載された集積回路素子2の上面の複数の配線パッドPとが金などの金属バンプC(導電性接合材)を介してFCBにより接続される点では上記実施形態と同様である。しかし、前記セラミックベース1の段差部上面の配線パターン12a,12b,12c,12dと、これらの配線パターンの位置に対応して前記回路基板4の第1の配線パターン41a,41d,41e,41fとが例えばペースト状であり銀フィラー等の金属微小片を含有するシリコーン系の導電性樹脂接着剤S(導電性接合材)を用いて、お互いを電気的機械的に接合している点が相違している。なお、シリコーン系の導電性樹脂接着剤に限らず、他の樹脂剤でもよく、さらにはんだ等の金属ろう材を用いてもよい。この構成では、予め集積回路素子2のみを回路基板4に対して金属バンプCを介してFCB接合し、当該回路基板を導電性樹脂接着剤Sが塗布されたセラミックベースの段差部10cと樹脂接着剤Jが塗布されたセラミックベースの第1の収納部10aの内底面に対して搭載して接合することで容易に得られる。   The integrated circuit element 2 mounted in the first housing portion is mechanically bonded to the inner bottom surface of the first housing portion of the base via, for example, a resin adhesive J on the bottom surface side where no wiring pad is formed. Has been. A circuit board 4 is mounted above the integrated circuit element 2 with a predetermined interval. At this time, in the present modification, the first wiring patterns 41a, 41b, 41c, 41d, 41e, 41f of the circuit board 4 and the first storage portions corresponding to the positions of the first wiring patterns. This is the same as the above-described embodiment in that a plurality of wiring pads P on the upper surface of the integrated circuit element 2 mounted on is connected by FCB via metal bumps C (conductive bonding material) such as gold. However, the wiring patterns 12a, 12b, 12c, 12d on the upper surface of the stepped portion of the ceramic base 1 and the first wiring patterns 41a, 41d, 41e, 41f of the circuit board 4 corresponding to the positions of these wiring patterns, However, it is different in that it is electrically and mechanically bonded to each other using, for example, a silicone conductive resin adhesive S (conductive bonding material) that is in the form of a paste and contains fine metal pieces such as silver filler. ing. In addition, it is not limited to a silicone-based conductive resin adhesive, and other resin agents may be used, and a metal brazing material such as solder may be used. In this configuration, only the integrated circuit element 2 is FCB bonded to the circuit board 4 via the metal bumps C in advance, and the circuit board is bonded to the ceramic base step portion 10c coated with the conductive resin adhesive S with the resin. It can be easily obtained by mounting and bonding to the inner bottom surface of the ceramic-based first storage portion 10a coated with the agent J.

上記実施形態の変形例により、セラミックベースの段差部10cの平坦性のバラツキや前記回路基板4とセラミックベースの段差部10cの隙間のバラツキを前記導電性樹脂接着材Sの接合領域で吸収してより確実な電気的機械的な接合が行える。特にシリコーン系などの柔軟な導電性樹脂接着材を用いた場合、圧電振動板2に対する外部衝撃がやわらげられるので、耐衝撃性能が向上する。なお、本変形例では前記セラミックベース1の段差部と前記回路基板4との接合に用いる導電性接合材と、圧電振動板3と回路基板4との接合に用いる導電性接合材とを同材質のシリコーン系の導電性樹脂接着剤を用いている。このようにお互いの導電性接合材を同材質の物を用いることで、導電性接合材の接合するための工程上の条件(樹脂接着剤の場合には硬化温度、ろう材の場合には溶融温度等)を同じにすることができるため製造上好ましい形態となる。   According to the modification of the above embodiment, the variation in flatness of the step portion 10c on the ceramic base and the variation in the gap between the step portion 10c on the circuit board 4 and the ceramic base are absorbed in the joining region of the conductive resin adhesive S. More reliable electromechanical joining can be performed. In particular, when a flexible conductive resin adhesive such as a silicone type is used, the external impact on the piezoelectric diaphragm 2 can be reduced, so that the impact resistance performance is improved. In this modification, the conductive bonding material used for bonding the step portion of the ceramic base 1 and the circuit board 4 and the conductive bonding material used for bonding the piezoelectric diaphragm 3 and the circuit board 4 are made of the same material. The silicone type conductive resin adhesive is used. In this way, by using the same material for each conductive bonding material, the process conditions for bonding the conductive bonding material (curing temperature in the case of resin adhesive, melting in the case of brazing material) The temperature and the like can be made the same, which is a preferable form for manufacturing.

上記した本発明の各実施形態では、圧電振動板としてATカット水晶振動板を用いているが、これに限定されるものでなく、音叉型水晶振動板であってもよい。また、圧電振動板として水晶を材料としているが、これに限定されるものではなく、圧電セラミックスやLiNbO3等の圧電単結晶材料を用いてもよい。すなわち、任意の圧電振動板が適用可能である。また、圧電振動板を回路基板上部で片持ち保持するものを例にしているが、圧電振動板の両端を保持する構成であってもよい。また本発明の各実施形態における封止構成としては、シーム封止に限らず、ビーム封止(例えば、レーザビーム、電子ビーム)やガラス封止、ろう材封止等であってもよい。 In each of the embodiments of the present invention described above, an AT cut quartz crystal diaphragm is used as the piezoelectric diaphragm, but the present invention is not limited to this, and a tuning fork type quartz diaphragm may be used. Further, although quartz is used as the piezoelectric diaphragm, the present invention is not limited to this, and a piezoelectric single crystal material such as piezoelectric ceramics or LiNbO 3 may be used. That is, any piezoelectric diaphragm can be applied. Further, although the piezoelectric diaphragm is cantilevered on the upper part of the circuit board, the configuration may be such that both ends of the piezoelectric diaphragm are held. In addition, the sealing configuration in each embodiment of the present invention is not limited to seam sealing, but may be beam sealing (for example, laser beam or electron beam), glass sealing, brazing material sealing, or the like.

本発明は、その思想または主要な特徴から逸脱することなく、他のいろいろな形で実施することができる。そのため、上述の実施例はあらゆる点で単なる例示にすぎず、限定的に解釈してはならない。本発明の範囲は特許請求の範囲によって示すものであって、明細書本文には、なんら拘束されない。さらに、特許請求の範囲の均等範囲に属する変形や変更は、全て本発明の範囲内のものである。   The present invention can be implemented in various other forms without departing from the spirit or main features thereof. For this reason, the above-described embodiment is merely an example in all respects and should not be interpreted in a limited manner. The scope of the present invention is indicated by the claims, and is not restricted by the text of the specification. Further, all modifications and changes belonging to the equivalent scope of the claims are within the scope of the present invention.

本発明の実施の形態を示す断面図。Sectional drawing which shows embodiment of this invention. 本発明の実施の形態を示す蓋をする前の平面図。The top view before carrying out the lid | cover which shows embodiment of this invention. 本発明の実施の形態を示す回路基板の平面図。The top view of the circuit board which shows embodiment of this invention. 図3の底面図。FIG. 4 is a bottom view of FIG. 3. 本発明の実施の形態にかかる表面実装型水晶発振器の概略工程図。1 is a schematic process diagram of a surface-mount crystal oscillator according to an embodiment of the present invention. 本発明の実施の形態の変形例を示す断面図。Sectional drawing which shows the modification of embodiment of this invention. 本発明の他の実施の形態を示す断面図。Sectional drawing which shows other embodiment of this invention.

符号の説明Explanation of symbols

1 セラミックベース
2 集積回路素子
3 圧電振動板
4 回路基板
S 導電性樹脂接着剤
C 金属バンプ
DESCRIPTION OF SYMBOLS 1 Ceramic base 2 Integrated circuit element 3 Piezoelectric diaphragm 4 Circuit board S Conductive resin adhesive C Metal bump

Claims (4)

励振電極と引出電極が形成された圧電振動板と一主面に配線パッドが形成された集積回路素子を有し、これらを収納する絶縁性のベースを有する表面実装型圧電発振器であって、
前記ベースは上面側に側壁部と収納部、底面側に端子電極を有しており、
前記収納部は内底面に前記集積回路素子が収納される第1の収納部と、
当該第1の収納部の側壁部と接続された段差部と、
前記圧電振動板が収納されるとともに前記第1の収納部と前記段差部の上面に配置される第2の収納部とが形成されており、
表裏面に配線パターンが形成された板状の回路基板の上面側の配線パターンと前記圧電振動板の引出電極とが導電性接合材で接合され、当該回路基板の底面側の配線パターンと前記集積回路素子の配線パッドとが導電性接合材で接合されるとともに、当該回路基板のみにより圧電振動板と集積回路素子とがお互いに電気的に接続されてなり、
前記段差部上面の配線パターンと前記回路基板の底面側の配線パターンの一部とが導電性接合材で接合されることで、回路基板の配線パターンが前記ベースの端子電極に導出されてなることを特徴とする表面実装型圧電発振器。
A surface-mount piezoelectric oscillator having a piezoelectric diaphragm having an excitation electrode and an extraction electrode and an integrated circuit element having a wiring pad formed on one main surface, and having an insulating base for housing them.
The base has a side wall portion and a storage portion on the upper surface side, and a terminal electrode on the bottom surface side,
The storage portion includes a first storage portion in which the integrated circuit element is stored on an inner bottom surface;
A step portion connected to the side wall portion of the first storage portion;
The piezoelectric diaphragm is housed, and the first housing part and the second housing part disposed on the upper surface of the stepped part are formed,
The wiring pattern on the upper surface side of the plate-like circuit board on which the wiring pattern is formed on the front and back surfaces and the extraction electrode of the piezoelectric diaphragm are bonded with a conductive bonding material, and the wiring pattern on the bottom surface side of the circuit board and the integrated circuit The circuit element wiring pad is bonded with a conductive bonding material, and the piezoelectric diaphragm and the integrated circuit element are electrically connected to each other only by the circuit board.
The wiring pattern on the circuit board is led out to the terminal electrode of the base by bonding the wiring pattern on the top surface of the stepped portion and a part of the wiring pattern on the bottom surface side of the circuit board with a conductive bonding material. A surface-mounted piezoelectric oscillator characterized by
前記集積回路素子の配線パッドが形成されない主面が前記ベースの第1の収納部内底面に対して機械的に接合されてなり、前記回路基板の底面側の配線パターンと前記集積回路素子の配線パッド、および前記ベースの段差部の上面の配線パターンと前記回路基板の底面側の配線パターンとを金属バンプにより接合してなることを特徴とする特許請求項1記載の表面実装型圧電発振器。 The main surface on which the wiring pad of the integrated circuit element is not formed is mechanically bonded to the inner bottom surface of the first storage portion of the base, and the wiring pattern on the bottom surface side of the circuit board and the wiring pad of the integrated circuit element 2. The surface-mount piezoelectric oscillator according to claim 1, wherein the wiring pattern on the upper surface of the step portion of the base and the wiring pattern on the bottom surface side of the circuit board are joined by metal bumps. 前記集積回路素子の配線パッドが形成されない主面が前記ベースの第1の収納部内底面に対して機械的に接合されてなり、前記回路基板の底面側の配線パターンと前記集積回路素子の配線パッドを金属バンプにより接合してなり、前記ベースの段差部の上面の配線パターンと前記回路基板の底面側の配線パターンとを導電性樹脂接着材あるいは金属ろう材により接合してなることを特徴とする特許請求項1記載の表面実装型圧電発振器。 The main surface on which the wiring pad of the integrated circuit element is not formed is mechanically bonded to the inner bottom surface of the first storage portion of the base, and the wiring pattern on the bottom surface side of the circuit board and the wiring pad of the integrated circuit element The wiring pattern on the upper surface of the stepped portion of the base and the wiring pattern on the bottom surface side of the circuit board are bonded with a conductive resin adhesive or a metal brazing material. The surface-mount piezoelectric oscillator according to claim 1. 励振電極と引出電極が形成された圧電振動板と、
一主面に配線パッドが形成された集積回路素子と、
前記集積回路素子が収納される第1の収納部と、当該第1の収納部の側壁部と接続された段差部と当該段差部上面に形成された配線パターンと、前記圧電振動板が収納されるとともに前記第1の収納部と前記段差部の上面に配置される第2の収納部とが形成されたベースと、
表裏面に配線パターンが形成され、当該表裏の配線パターンがお互いに電気的に接続された板状の回路基板とを有する表面実装型圧電発振器の製造方法であって、
前記集積回路素子の配線パッドが形成されない他主面を前記ベースの第1の収納部内底面にダイボンディングする工程と、
前記集積回路素子の配線パッドと前記ベースの段差部の配線パターン、あるいは前記回路基板の裏面側の配線パターンのうちの少なくとも一方に金属バンプを形成する工程と、
前記集積回路素子の配線パッドと前記ベースの段差部の配線パッドに対して前記金属バンプが介在した状態で前記回路基板の裏面側の配線パターンを重ね合わせて超音波接合することでお互いに電気的機械的に接合する工程と、
前記集積回路素子とベースに接合された回路基板の上面側の配線パターンに対して圧電振動板の引出電極とを導電性接合材により接合する工程とからなることを特徴とする表面実装型圧電発振器の製造方法。
A piezoelectric diaphragm in which an excitation electrode and an extraction electrode are formed;
An integrated circuit element having a wiring pad formed on one main surface;
A first storage portion that stores the integrated circuit element, a step portion connected to a side wall portion of the first storage portion, a wiring pattern formed on an upper surface of the step portion, and the piezoelectric diaphragm are stored. And a base on which the first storage portion and a second storage portion disposed on the upper surface of the stepped portion are formed,
A method of manufacturing a surface-mounted piezoelectric oscillator having a wiring pattern formed on the front and back surfaces and a plate-like circuit board in which the wiring patterns on the front and back surfaces are electrically connected to each other,
Die bonding the other main surface of the integrated circuit element where the wiring pads are not formed on the bottom surface of the first storage portion of the base;
Forming metal bumps on at least one of the wiring pattern of the integrated circuit element and the wiring pattern of the stepped portion of the base, or the wiring pattern on the back side of the circuit board;
The wiring patterns on the back side of the circuit board are superposed and ultrasonically bonded to each other with the metal bumps interposed between the wiring pads of the integrated circuit element and the wiring pads of the stepped portion of the base. Mechanically joining, and
A surface-mount type piezoelectric oscillator comprising a step of bonding a lead electrode of a piezoelectric diaphragm to a wiring pattern on an upper surface side of a circuit board bonded to the integrated circuit element and a base with a conductive bonding material Manufacturing method.
JP2008080933A 2008-03-26 2008-03-26 Surface mounting piezoelectric oscillator Pending JP2009239475A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9444466B2 (en) 2014-03-27 2016-09-13 Seiko Epson Corporation Method of adjusting frequency of resonation device and method of manufacturing resonation device
JP2019114998A (en) * 2017-12-26 2019-07-11 セイコーエプソン株式会社 Vibration device, electronic apparatus and moving body
US10784835B2 (en) 2017-11-29 2020-09-22 Seiko Epson Corporation Vibration device, electronic apparatus, and vehicle

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9444466B2 (en) 2014-03-27 2016-09-13 Seiko Epson Corporation Method of adjusting frequency of resonation device and method of manufacturing resonation device
US10784835B2 (en) 2017-11-29 2020-09-22 Seiko Epson Corporation Vibration device, electronic apparatus, and vehicle
JP2019114998A (en) * 2017-12-26 2019-07-11 セイコーエプソン株式会社 Vibration device, electronic apparatus and moving body
JP7013855B2 (en) 2017-12-26 2022-02-01 セイコーエプソン株式会社 Vibration devices, electronic devices and mobiles
US11277111B2 (en) 2017-12-26 2022-03-15 Seiko Epson Corporation Vibrator device, electronic apparatus, and vehicle

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